WO2024159909A1 - 光伏电池片电极及其制作方法和制作装置、以及应用 - Google Patents

光伏电池片电极及其制作方法和制作装置、以及应用 Download PDF

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Publication number
WO2024159909A1
WO2024159909A1 PCT/CN2023/136339 CN2023136339W WO2024159909A1 WO 2024159909 A1 WO2024159909 A1 WO 2024159909A1 CN 2023136339 W CN2023136339 W CN 2023136339W WO 2024159909 A1 WO2024159909 A1 WO 2024159909A1
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Prior art keywords
photovoltaic cell
micro
manufacturing
lens array
light
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PCT/CN2023/136339
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English (en)
French (fr)
Inventor
魏国军
陈林森
卢国
范广飞
周杨
赵改娜
魏中文
毛立华
周小红
浦东林
乔文
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Suzhou University
SVG Tech Group Co Ltd
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Suzhou University
SVG Tech Group Co Ltd
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Publication of WO2024159909A1 publication Critical patent/WO2024159909A1/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells

Definitions

  • the present invention relates to the technical field of photovoltaic cells, and in particular to a photovoltaic cell electrode, a manufacturing method and a manufacturing device thereof, and applications thereof.
  • the metallization process is a necessary step in the manufacturing process of photovoltaic cell electrodes. It is used to make electrodes for photovoltaic cells and realize the current output of photoelectric conversion.
  • the electrode line width of the metallization process has an important impact on the photoelectric conversion efficiency and manufacturing cost of photovoltaic cells.
  • the cost of silver paste materials is equivalent to that of silicon wafer materials, and the cost accounts for a high proportion in the entire cell manufacturing.
  • the traditional metallization process for photovoltaic cell electrodes is a technical solution of screen printing conductive silver paste and then high-temperature sintering.
  • the demand for silver will also increase significantly with the increasing photovoltaic cell production capacity year by year, and the global silver mining volume will also be difficult to meet such a huge demand for silver.
  • reducing the amount of silver or replacing silver with other non-precious metals is an important direction for solving the problem of photovoltaic cell electrode production.
  • electroplating technology is being studied more and more widely as a new electrode preparation method. Its process flow is as follows: prepare a seed layer on the cell substrate, cover the seed layer with an insulating layer, prepare an electrode pattern groove on the insulating layer, expose the bottom of the groove to the seed layer, deposit the electrode material on the seed layer at the bottom of the groove by electroplating, remove the insulating layer and seed layer by etching process, and finally form a fine photovoltaic cell electrode. Due to the isotropic growth of the electrode in the electroplating process, the bottom-exposed groove should have a certain depth-to-width ratio.
  • lithography methods include projection lithography systems and PCB multi-optical head maskless lithography systems, as well as contact or proximity lithography.
  • the unit pixel of the spatial light modulator (DMD) is about 10 ⁇ m.
  • the projection optical system in the existing lithography machine is generally 2 to 5 times smaller.
  • the existing lithography machine needs to install 8 to 16 sets of optical heads (including spatial light modulators, projection optical systems, and illumination optical systems). This leads to high equipment prices and high operating costs, and low efficiency of lithography patterning.
  • the line width is greater than 50 ⁇ m, and it is difficult to lithography a groove with a line width less than 20 ⁇ m and a depth greater than 10 ⁇ m.
  • a device for manufacturing a photovoltaic cell electrode comprising a laser source, a collimated beam generating unit and a beam focusing unit;
  • the collimated beam generating unit is located at the light-emitting side of the laser source, and is used to convert the laser beam emitted by the laser source into a collimated beam and project it to the beam focusing unit;
  • the beam focusing unit is located at the light-emitting side of the collimated beam generating unit, and is used to focus the collimated beam onto the cell to be photoetched.
  • the photovoltaic cell electrode manufacturing device using the above-mentioned technical solution of the present invention is used to manufacture photovoltaic cell electrodes
  • multiple sets of spatial light modulators, projection optical systems and illumination optical systems are not required, so the device development cost is reduced exponentially; data processing and multi-path overlapping alignment are not required, thereby improving the manufacturing reliability and efficiency; and the lithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2 can be achieved, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • the light beam focusing unit has a micro-column lens array or a micro-lens array, and the lens surface of the micro-column lens array or the micro-lens array faces toward or faces away from the cell to be photoetched.
  • the micro-column lens array corresponds to the position of the cell to be photolithography one by one, and the period of the micro-column lens array and the secondary grid of the cell to be photolithography are the same.
  • the period of the micro-column lens array is 0.1 mm to 3 mm, and the numerical aperture of the micro-column lens array is 0.005 to 0.15.
  • the micro-column lens array includes a plurality of cylindrical lenses periodically arranged along a row direction or a column direction, and a distance between two adjacent cylindrical lenses is 0 to 0.2 mm.
  • the light beam focusing unit is a diffractive optical element, and the diffractive surface of the diffractive optical element faces the collimated light beam generating unit.
  • the beam focusing unit includes a first micro-column lens array device and a second micro-column lens array device arranged in sequence along the light output path, the first micro-column lens array device and the second micro-column lens array device are placed confocally, the lens surface of the first micro-column lens array device is opposite to the lens surface of the second micro-column lens array device, and the focal length of the first micro-column lens array device is greater than the focal length of the second micro-column lens array device.
  • the beam focusing unit further includes a first light shielding mask for shielding stray light or the main grid area of the cell to be photolithographically lit, the first light shielding mask is located at the confocal focal plane position of the first micro-column lens array device and the second micro-column lens array device, the first light shielding mask is provided with a plurality of openings, and the plurality of openings are one-to-one with the positions of the plurality of confocal focal points of the first micro-column lens array device and the second micro-column lens array device. answer.
  • the collimated light beam is a collimated line light beam or a collimated surface light beam.
  • the collimated light beam generating unit includes a light beam transmission component and at least one group of light beam diffusion components sequentially arranged along the light output path, and the light beam diffusion component includes a diffusion lens and a collimator lens sequentially arranged along the light output path;
  • the diffusion lens is located on the light-emitting side of the beam transmission component, and is used to diffuse the laser beam formed by the beam transmission component to the collimator;
  • the collimator is located on the light-emitting side of the diffusion lens, and is used to form a parallel line beam from the laser beam passing through the diffusion lens and project it onto the beam focusing unit.
  • the light beam transmission component includes:
  • a galvanometer located at the light-emitting side of the laser source, and used to change the direction of the laser beam emitted by the laser source;
  • the field lens is located at the light-emitting side of the galvanometer mirror and is used to focus the laser beam formed by the galvanometer mirror onto the diffusion lens.
  • the beam transmission component includes a rotating mirror, which is used to change the direction of the laser beam emitted by the laser source and project the laser beam onto the diffusion lens.
  • the beam transmission component includes at least one reflector, which is used to change the direction of the laser beam emitted by the laser source and project the laser beam onto the diffusion lens.
  • the collimated light beam generating unit further includes a light beam shaping component, and the light beam shaping component is located between the laser source and the light beam transmission component.
  • the photovoltaic cell electrode manufacturing device also includes a second light-shielding mask for shielding stray light, and the second light-shielding mask is located between the collimated beam generating unit and the beam focusing unit, or between the beam focusing unit and the cell to be photolithographic.
  • a method for manufacturing a photovoltaic cell electrode comprises the following steps:
  • the cell to be photoetched comprises a cell substrate, a seed layer located on the cell substrate, and an insulating layer located on the seed layer;
  • Electrode material is deposited in the electrode pattern grooves by an electroplating process, and then the patterned insulating layer and the seed layer located in the projection of the patterned insulating layer are removed to obtain a photovoltaic cell electrode.
  • the above-mentioned method for manufacturing photovoltaic cell electrodes does not require multiple sets of spatial light modulators, projection optical systems and illumination optical systems, so the device development cost is reduced exponentially; data processing and multi-path overlap alignment are not required, thereby improving the manufacturing reliability and efficiency; a higher aspect ratio can be achieved, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2
  • the electrode pattern grooves are photolithographically etched to obtain higher quality photovoltaic cell electrodes.
  • the insulating layer is a positive photoresist
  • the micro-column lens array or micro-lens array of the beam focusing unit is focused to form a plurality of focal points
  • the plurality of focal points are located on a side of the insulating layer away from the battery cell substrate, and the distances between the plurality of focal points and the surface of the insulating layer away from the battery cell substrate are all 0.01 mm to 1 mm.
  • the insulating layer is a negative photoresist
  • the micro-column lens array or micro-lens array of the beam focusing unit is focused to form a plurality of focal points
  • the plurality of focal points are located on a side of the insulating layer close to the battery cell substrate, and the distances between the plurality of focal points and the surface of the insulating layer close to the battery cell substrate are all 0.01 mm to 1 mm.
  • the thickness of the insulating layer is 1 ⁇ m to 20 ⁇ m.
  • the electrode material is copper.
  • a photovoltaic cell electrode is manufactured by using any of the above-mentioned methods for manufacturing a photovoltaic cell electrode.
  • the above-mentioned method for manufacturing photovoltaic cell electrodes can realize photolithography of electrode pattern grooves with a relatively high aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • a photovoltaic cell sheet comprises the photovoltaic cell sheet electrode mentioned above.
  • the photovoltaic cell of the technical solution of the present invention includes the above-mentioned photovoltaic cell electrode. Due to the effect of the beam focusing unit, it is possible to achieve photolithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and an aspect ratio of 0.3 to 2, thereby achieving fine electrode pattern grooves, making the photovoltaic cell of the present invention conducive to wide application.
  • a photovoltaic cell comprises the photovoltaic cell sheet mentioned above.
  • the photovoltaic cell of the technical solution of the present invention includes the above-mentioned photovoltaic cell sheet, and the above-mentioned photovoltaic cell sheet includes the above-mentioned photovoltaic cell sheet electrode. Due to the effect of the beam focusing unit, it is possible to achieve photolithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2, thereby achieving fine electrode pattern grooves, making the photovoltaic cell of the present invention conducive to wide application.
  • FIG1 is a schematic diagram of a device for manufacturing a photovoltaic cell electrode according to a first embodiment of the present invention
  • FIG2 is a schematic diagram of a micro-cylindrical lens array of a light beam focusing unit according to another embodiment of the present invention.
  • FIG. 3 is a schematic diagram showing the correspondence between the period of a micro-column lens array in a beam focusing unit and the period of a secondary grid of a cell to be photolithographically processed in one embodiment of the present invention
  • FIG4 is a graph showing the relationship between the optical transfer function and the number of line pairs per millimeter
  • FIG5 is a graph showing the relationship between optical transfer function and focus shift
  • FIG. 6 is a schematic diagram of a beam focusing unit according to a second embodiment of the present invention.
  • FIG. 7 is a schematic diagram of a beam focusing unit according to a third embodiment of the present invention.
  • FIG8 is a schematic diagram of a collimating lens according to another embodiment of the present invention.
  • FIG. 9 is a schematic diagram of a device for manufacturing a photovoltaic cell electrode according to a second embodiment of the present invention.
  • FIG. 10 is a schematic diagram of a device for manufacturing photovoltaic cell electrodes according to a third embodiment of the present invention.
  • FIG. 11 is a schematic diagram of a device for manufacturing photovoltaic cell electrodes according to a fourth embodiment of the present invention.
  • FIG. 12 is a schematic diagram of a device for manufacturing a photovoltaic cell electrode according to a fifth embodiment of the present invention.
  • FIG. 13 is a schematic diagram of a device for manufacturing photovoltaic cell electrodes according to a sixth embodiment of the present invention.
  • FIG. 14 is a schematic diagram of a device for manufacturing a photovoltaic cell electrode according to a seventh embodiment of the present invention.
  • 15 is a schematic diagram of the position of the second light-shielding mask plate in the device for manufacturing the photovoltaic cell electrode according to one embodiment of the present invention.
  • 16 is a schematic diagram of another position of the second light shielding mask plate in the device for manufacturing the photovoltaic cell electrode according to one embodiment of the present invention.
  • FIG17 is a flow chart of a method for manufacturing a photovoltaic cell electrode according to an embodiment of the present invention.
  • FIG18 is a schematic diagram of a photovoltaic cell electrode manufacturing device according to an embodiment of the present invention for patterning a cell to be photolithographically processed;
  • FIG19 is a schematic diagram of a photovoltaic cell electrode manufacturing device using another embodiment to pattern a cell to be photolithographically processed
  • FIG20 is a schematic diagram of a photovoltaic cell electrode manufacturing device using another embodiment to pattern a cell to be photolithographically processed
  • FIG21 is a schematic diagram of a photovoltaic cell electrode manufacturing device using another embodiment to pattern a cell to be photolithographically processed
  • FIG22 is a schematic diagram of the overlapping manner between several cells to be photolithographically processed in the process of patterning using the manufacturing device of FIG21;
  • FIG. 23 is a schematic diagram of the position between the focusing point of the light beam focusing unit and the insulating layer according to one embodiment of the present invention.
  • FIG. 24 is a schematic diagram of the position between the focusing point of the light beam focusing unit and the insulating layer according to another embodiment of the present invention.
  • FIG25 is a flow chart of a method for manufacturing a photovoltaic cell electrode according to an embodiment of the present invention.
  • FIG26 is a flow chart of a method for manufacturing a photovoltaic cell electrode according to another embodiment of the present invention.
  • FIG27 is a side view schematic diagram of a process for manufacturing a photovoltaic cell electrode according to an embodiment of the present invention.
  • FIG28 is a schematic plan view of a process for manufacturing a photovoltaic cell electrode according to an embodiment of the present invention.
  • FIG29 is a side view schematic diagram of a process for manufacturing a photovoltaic cell electrode according to another embodiment of the present invention.
  • FIG30 is a schematic plan view of a process for manufacturing a photovoltaic cell electrode according to another embodiment of the present invention.
  • FIG31 is a schematic plan view of a process for manufacturing a photovoltaic cell electrode according to another embodiment of the present invention.
  • FIG32 is a schematic diagram of a collimated linear beam scanning a beam focusing unit according to an embodiment of the present invention.
  • FIG33 is a schematic diagram of a collimated linear beam scanning a beam focusing unit according to another embodiment of the present invention.
  • FIG34 is a schematic diagram of scanning during the manufacturing process of a photovoltaic cell electrode according to an embodiment of the present invention.
  • FIG35 is a schematic diagram of a photovoltaic cell electrode manufacturing device according to an embodiment of the present invention.
  • FIG. 36 is a schematic diagram of a photovoltaic cell electrode manufacturing device according to another embodiment of the present invention.
  • a photovoltaic cell electrode manufacturing device 100 includes a laser source 110 , a collimated light beam generating unit 120 and a light beam focusing unit 130 .
  • the laser source 110 is an ultraviolet or blue laser, the wavelength of the light source is between 325nm and 450nm, and the power is between 1W and 100W.
  • the wavelength of the light source is 405nm, 395nm, 365nm, 355nm or 325nm.
  • the collimated beam generating unit 120 is located at the light output side of the laser source 110, and is used to convert the laser beam emitted by the laser source 110 into a collimated beam and project it to the beam focusing unit 130.
  • the collimated beam can be a collimated linear beam with a small divergence angle (e.g., less than 0.2°).
  • the beam focusing unit 130 is located at the light-emitting side of the collimated beam generating unit 120, and is used to focus the collimated line beam onto the cell 140 to be photoetched.
  • the cell 140 to be photoetched includes a cell substrate 141, a The seed layer 142 on the battery substrate 141 and the insulating layer 143 on the seed layer 142.
  • the seed layer 142 can increase the adhesion between the electrode material and the battery substrate 141.
  • the insulating layer 143 is made of a photosensitive material, such as photoresist or photosensitive ink.
  • the collimated straight beam emitted by the collimated beam generating unit 120 is vertically irradiated on the upper surface of the beam focusing unit 130, and is focused by the beam focusing unit 130 to form a plurality of focal points, which just fall near the insulating layer 143 of the cell 140 to be photoetched, forming micro grooves on the insulating layer 143.
  • a plurality of focal points are integrally exposed to form a plurality of groove lines, and the electrode pattern grooves are obtained after development. In this way, multiple groups or all of the micro groove lithography are completed at one time, realizing efficient patterning of precision electrodes of photovoltaic cell pieces.
  • the photovoltaic cell electrode manufacturing device 100 using this embodiment can realize the lithography of electrode pattern grooves with a relatively high aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width and 1 ⁇ m to 20 ⁇ m depth, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • the beam focusing unit 130 has a micro-column lens array 131, and the lens surface of the micro-column lens array 131 faces away from the cell 140 to be photoetched.
  • the micro-column lens array 131 can focus the linear beam to form a plurality of focal points, which fall near the insulating layer 143, and the groove lines are formed by integral exposure, and the electrode pattern grooves are obtained after development.
  • the lens surface of the microlens array 131 of the beam focusing unit 130 can also face the cell 140 to be photoetched, as shown in Figure 2.
  • the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the microlens array 131 can also focus the collimated linear beam to form a plurality of focus points, thereby exposing the insulating layer 143 to form a groove line.
  • the material of the micro-column lens array 131 is a transparent material, such as glass or resin; preferably, an optical material with high transmittance to ultraviolet or blue-violet wavelengths, such as quartz glass or optical plastic, is used.
  • the above-mentioned column lens array 131 can be transferred to the substrate by UV embossing, or directly etched onto the substrate.
  • the micro-column lens array 131 corresponds to the position of the sub-grid of the cell 140 to be photoetched, and the micro-column lens array 131 has the same period as the sub-grid of the cell 140 to be photoetched. In this way, the electrode pattern grooves of the entire photovoltaic cell can be obtained by photoetching once, thereby improving the production efficiency of the photovoltaic cell electrode.
  • the period of the micro-column lens array 131 can also correspond to the period of multiple sub-grids of the cell 140 to be photolithographically processed, as shown in Figure 3.
  • the beam focusing unit with the micro-column lens array is horizontally moved by a corresponding distance to realize the photolithography of the sub-grids of another group of photovoltaic cell sheets.
  • the period of the micro-column lens array 131 is 0.1mm-3mm, and the numerical aperture of the micro-column lens array 131 is 0.005-0.15.
  • the relationship between the optical transfer function (Modulus of the OTF) and the number of lines per millimeter (Spatial Frequency in cycles per mm) and the focus shift (Focus shift in Millimeters) are shown in Figures 4 and 5 respectively.
  • Figure 5 is similar, and the corresponding focus shift data is also taken when the optical transfer function is greater than 0.5.
  • the numerical aperture NA of the focusing micro-column lens array design is 0.03, and the focal depth is ⁇ 250 ⁇ m.
  • the arrangement density of the photovoltaic cell electrode of the present invention can be increased to 3 times.
  • the electrode arrangement density is high under the same shading area, and the photogenerated electrons are collected by the electrode in the shortest path, thereby improving the photoelectric conversion efficiency; the electrode collects the photogenerated electrons in a dispersed manner, and the current on each electrode is small; the electrode line width is small, and under the same conductivity, the electrode line height can be reduced, the insulating layer layer thickness is thin, the exposure time is short, and the production efficiency is high under the same laser energy; the insulating layer layer thickness is thin, saving the amount of insulating layer material for the cell.
  • the micro-column lens array 131 includes a plurality of cylindrical lenses periodically arranged along the row direction or the column direction, and the spacing between two adjacent cylindrical lenses is 0 to 0.2 mm. When the spacing between two adjacent cylindrical lenses is 0, the plurality of cylindrical lenses are closely arranged. This embodiment can improve the light energy utilization rate of the laser beam.
  • the micro-column lens array in the beam focusing unit can also be a micro-lens array.
  • the lens surface of the micro-lens array faces or faces away from the cell to be photoetched.
  • the material of the micro-lens array is a transparent material, such as glass or resin; preferably, an optical material with high transmittance to ultraviolet or blue-violet wavelengths, such as quartz glass or optical plastic, is used.
  • the microlens array can focus a collimated linear light beam to form a plurality of focal points.
  • the collimated light beam generating unit and the light beam focusing unit are designed as a whole, and keep relative movement with the cell to be photoetched, and move and scan with motion control, thereby exposing the insulating layer to form a groove line, and then forming an electrode pattern groove on the insulating layer after development.
  • the beam focusing unit is not limited to the single micro-column lens array or micro-lens array of the above-mentioned embodiment, but can also be other devices that can play a role in focusing the light beam.
  • the beam focusing unit 130 of the second embodiment of the present invention is a diffractive optical element (DOE), and the diffractive surface of the diffractive optical element faces the collimated beam generating unit, as shown in FIG6 .
  • the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the beam focusing unit 130 can also focus the collimated linear beam to form a plurality of focus points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the light beam focusing unit 130 of the third embodiment of the present invention includes a first micro-column lens array device 131 and a second micro-column lens array device 132 which are sequentially arranged along the light output path.
  • the cylindrical lens array device 132 is placed confocally, the lens surface of the first micro cylindrical lens array device 131 is opposite to the lens surface of the second micro cylindrical lens array device 132 , and the focal length of the first micro cylindrical lens array device 131 is greater than the focal length of the second micro cylindrical lens array device 132 .
  • the beam focusing unit 130 of the third embodiment is suitable for the insulating layer of the cell 140 to be photoetched being a negative photoresist type, wherein the cell 140 to be photoetched comprises a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the first micro-column lens array device 131 located above collects the collimated linear beam and focuses it, which is then collimated and irradiated onto the surface of the insulating layer 143 by the second micro-column lens array device 132 below, forming a collimated wide beam exposure with a periodic interval of the sub-grid.
  • the beam focusing unit 130 further includes a first light shielding mask 133 for shielding stray light or the main grid region of the cell to be photolithographically processed.
  • the first light shielding mask 133 is located at the confocal focal plane position of the first micro-column lens array device 131 and the second micro-column lens array device 132.
  • the first light shielding mask 133 is provided with a plurality of openings, and the plurality of openings correspond to the positions of the plurality of confocal focal points of the first micro-column lens array device 131 and the second micro-column lens array device 132.
  • the first light shielding mask 133 can shield the stray light or the main grid region of the cell to be photolithographically processed, prevent the beam from being focused on the electrode pattern groove region, and improve the accuracy of photolithography.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 which are sequentially arranged along the light output path.
  • the beam diffusion component 122 includes a diffusion lens 123 and a collimating lens 124 which are sequentially arranged along the light output path.
  • the diffusion lens 123 is located at the light-emitting side of the beam transmission component 121, and is used to diffuse the laser beam formed by the beam transmission component 121 to the collimator 124.
  • the collimator 124 is located at the light-emitting side of the diffusion lens 123, and is used to form a parallel line beam from the laser beam passing through the diffusion lens 123 and project it onto the beam focusing unit 130.
  • the collimator 124 and the diffusion lens 123 are confocal.
  • the diffusion lens 123 is a diffusion negative cylindrical lens, and the focus of the diffusion negative cylindrical lens is set to be confocal with the collimator 124.
  • the collimator 124 is a collimator cylindrical lens or a collimator lens.
  • the collimator cylindrical lens or the collimator lens can form a parallel line beam to be projected onto the beam focusing unit 130, and then the beam focusing unit 130 focuses the collimated linear beam to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the diffusion lens may also be a diffusion positive cylindrical lens.
  • the diffusion lens is a diffusion positive cylindrical lens
  • the real focus of the diffusion positive cylindrical lens is confocal with the collimator.
  • the collimator 124 can also be a Fresnel collimating cylindrical lens, as shown in FIG8 .
  • the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the Fresnel collimating cylindrical lens can form a parallel line beam to be projected onto the beam focusing unit 130, and then the beam focusing unit 130 focuses the collimated linear beam to form a plurality of focus points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the light beam transmission component 121 It includes a galvanometer 125 and a field lens 126.
  • the galvanometer 125 is located at the light-emitting side of the laser source 110 and is used to change the direction of the laser beam emitted by the laser source 110.
  • the field lens 126 is located at the light-emitting side of the galvanometer 125 and is used to focus the laser beam formed by the galvanometer 125 onto the diffusion lens 123.
  • the beam diffusion component 122 is a group, but it should be noted that in the photovoltaic cell electrode manufacturing device of the present invention, the number of beam diffusion components is not limited to one group, and can also be two groups or more than two groups, which can be specifically set according to the laser beam emitted from the beam transmission component.
  • the photovoltaic cell electrode manufacturing device 100 of the second embodiment of the present invention includes a laser source 110, a collimated beam generating unit 120 and a beam focusing unit 130.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 arranged in sequence along the light output path.
  • the beam transmission component 121 includes a galvanometer 125 and a field lens 126 arranged in sequence along the light output path
  • the beam diffusion component 122 includes a diffusion lens 123 and a collimator lens 124 arranged in sequence along the light output path.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam is split into multiple beams after passing through the beam transmission component 121, and two vertically irradiated laser beams are emitted, and two groups of beam diffusion components 122 are respectively set correspondingly.
  • the two groups of beam diffusion components 122 are closely arranged, and multiple collimated linear beams can be generated to irradiate the beam focusing unit 130, thereby improving work efficiency.
  • the light beam transmission component is not limited to the above two implementations, but may also be a light beam transmission component of other structures.
  • the photovoltaic cell electrode manufacturing device 100 of the third embodiment of the present invention includes a laser source 110, a collimated beam generating unit 120 and a beam focusing unit 130.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 arranged in sequence along the light path, wherein the beam diffusion component 122 includes a diffusion lens 123 and a collimator 124 arranged in sequence along the light path.
  • the beam transmission component 121 includes a reflector, which is used to change the direction of the laser beam emitted by the laser source 110 and project the laser beam onto the diffusion lens 123.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam emitted by the laser source 110 is sequentially formed into a collimated linear beam through the reflector and the beam diffusion component 122, and then the beam focusing unit 130 focuses the collimated linear beam to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the number of the reflectors is not limited, and can be two or more. It can be set as one group of laser sources corresponding to multiple reflectors, or it can be set as multiple groups of laser sources corresponding to multiple reflectors. Reflector.
  • the photovoltaic cell electrode manufacturing device 100 of the fourth embodiment of the present invention includes a laser source 110, a collimated beam generating unit 120 and a beam focusing unit 130.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 sequentially arranged along the light output path, wherein the beam diffusion component 122 includes a diffusion lens 123 and a collimator 124 sequentially arranged along the light output path.
  • the beam transmission component 121 includes four reflectors arranged along the light output path, each reflector is used to change the direction of the laser beam emitted by the laser source 110 and project the laser beam onto the corresponding diffusion lens 123.
  • the first three reflectors from left to right are lens reflectors or other non-total reflectors, and the rightmost reflector is a total reflector.
  • the laser beam passes through the first three reflectors in sequence, part of the laser beam is reflected by the reflector and then projected onto the diffuser lens 123, and the remaining part of the laser beam can pass through the front reflector and then be projected onto the adjacent reflector behind, until the laser beam is irradiated onto the rightmost total reflector and is then completely reflected onto the diffuser lens 123 located below the rightmost total reflector.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam emitted by the laser source 110 sequentially passes through multiple reflectors and corresponding multiple groups of beam diffusion components 122 to form multiple collimated linear beams, and then the beam focusing unit 130 focuses the multiple collimated linear beams to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • a group of laser sources 110 can scan to realize multi-beam splitting, and multiple groups of beam diffusion components 122 are used to form multiple collimated linear beams, thereby improving work efficiency.
  • the manufacturing device 100 of the photovoltaic cell electrode of the fifth embodiment of the present invention includes a laser source 110, a collimated beam generating unit 120 and a beam focusing unit 130.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 which are sequentially arranged along the light output path, wherein the beam diffusion component 122 includes a diffusion lens 123 and a collimator 124 which are sequentially arranged along the light output path.
  • the number of laser sources 110 is four, and the collimated beam generating unit 120 and the beam focusing unit 130 are correspondingly arranged in four groups.
  • Each beam transmission component 121 includes a reflector, and each reflector is used to change the direction of the laser beam emitted by the laser source 110 and project the laser beam onto the correspondingly arranged diffusion lens 123.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam emitted by each laser source 110 is sequentially formed into multiple collimated linear beams through correspondingly arranged reflectors and corresponding multiple groups of beam diffusion components 122, and then the beam focusing unit 130 focuses the multiple collimated linear beams to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • multiple groups of laser sources 100 and multiple groups of collimated beam generating units 120 are used.
  • the beam focusing unit 130 generates a plurality of collimated linear beams simultaneously, and the scanning of the collimated linear beams is achieved by the overall movement of the manufacturing device, so that a low-power laser source can be used to improve work efficiency.
  • the photovoltaic cell electrode manufacturing device 100 of the sixth embodiment of the present invention includes a laser source 110, a collimated beam generating unit 120 and a beam focusing unit 130.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 arranged in sequence along the light path, wherein the beam diffusion component 122 includes a diffusion lens 123 and a collimator 124 arranged in sequence along the light path.
  • the beam transmission component 121 includes a rotating mirror, which is used to change the direction of the laser beam emitted by the laser source 110 and project the laser beam onto the correspondingly arranged diffusion lens 123.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam emitted by the laser source 110 is sequentially formed into multiple collimated linear beams through the rotating mirror and the beam diffusion component 122, and then the beam focusing unit 130 focuses the multiple collimated linear beams to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the photovoltaic cell electrode manufacturing device 100 of the seventh embodiment of the present invention includes a laser source 110, a beam shaping component 150, a collimated beam generating unit 120 and a beam focusing unit 130 arranged in sequence along the light-emitting optical path.
  • the collimated beam generating unit 120 includes a beam transmission component 121 and a beam diffusion component 122 arranged in sequence along the light-emitting optical path, wherein the beam diffusion component 122 includes a diffusion lens 123 and a collimator 124 arranged in sequence along the light-emitting optical path.
  • the beam transmission component 121 includes a reflector, which is used to change the direction of the laser beam emitted by the laser source 110 and project the laser beam onto the diffusion lens 123.
  • the beam shaping component 150 can shape or homogenize the laser Gaussian beam so that the edge of the collimated linear beam is consistent with the center energy.
  • the beam shaping component 150 can be a ⁇ -shaped shaping device, or a homogenizing device implemented by a microlens array group, or it can be implemented by taking the uniform part of the central beam through laser beam diffusion, or a combination of the above devices or methods.
  • the cell 140 to be photoetched is placed directly below the beam focusing unit 130, wherein the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the laser beam emitted by the laser source 110 is sequentially passed through the beam shaping component 150, the reflector and the beam diffusion component 122 to form a collimated linear beam, and then the beam focusing unit 130 focuses the collimated linear beam to form a plurality of focal points, thereby exposing the insulating layer 143 to form the groove lines of the electrode pattern.
  • the manufacturing device of the photovoltaic cell electrode further includes a second light shielding mask 160 for shielding stray light, and the second light shielding mask 160 is located between the collimated beam generating unit and the beam focusing unit 130, as shown in FIG15; or between the beam focusing unit 130 and the cell to be photoetched 140, as shown in FIG16.
  • the collimated beam generating unit includes a beam diffusion component 122, and the beam diffusion component 122 includes diffusion lenses 123 arranged in sequence along the light path. and a collimator 124.
  • the beam focusing unit 130 has a micro-column lens array 131.
  • the cell 140 to be photoetched includes a cell substrate 141, a seed layer 142 and an insulating layer 143 stacked in sequence.
  • the second light shielding mask 160 can shield the gap between two adjacent micro-cylindrical lenses in the micro-cylindrical lens array 131 to avoid stray light; it can also shield the edge beam of the collimated light beam to make the beam energy uniform.
  • the photovoltaic cell electrode manufacturing device of the present invention can simultaneously realize the manufacturing of fine sub-grid electrodes and wide main grid electrodes of photovoltaic cells.
  • the collimated beam generating unit of any embodiment described above and the beam focusing unit of any embodiment described above can be arranged and used in combination.
  • the photovoltaic cell electrode manufacturing device using the above-mentioned technical solution of the present invention is used to manufacture photovoltaic cell electrodes
  • multiple sets of spatial light modulators, projection optical systems and illumination optical systems are not required, so the device development cost is reduced exponentially; data processing and multi-path overlapping alignment are not required, thereby improving the manufacturing reliability and efficiency; and the lithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2 can be achieved, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • a method for manufacturing a photovoltaic cell electrode according to an embodiment of the present invention includes the following steps:
  • the cell to be photoetched comprises a cell substrate, a seed layer located on the cell substrate, and an insulating layer located on the seed layer.
  • the cell substrate may be, for example, a silicon wafer.
  • a seed layer may be formed on the cell substrate and an insulating layer may be formed on the seed layer using a common method in the art.
  • the thickness of the insulating layer is 1 ⁇ m to 20 ⁇ m.
  • the cell 140 to be photoetched includes a cell substrate 141 , a seed layer 142 located on the cell substrate, and an insulating layer 143 located on the seed layer 142 .
  • the laser beam 200 is sequentially passed through the diffuse negative cylindrical lens 123 and the collimating cylindrical lens 124 to form a collimated linear beam. Then, the beam focusing unit 130 with a micro cylindrical lens array focuses the collimated linear beam to form a plurality of focal points. The laser beam 200 scans along the scanning direction Y, thereby exposing the insulating layer 143 to form the groove line 144 of the electrode pattern.
  • the laser beam 200 is sequentially passed through the diffuse positive cylindrical lens 123 and the collimating cylindrical lens 124 to form a collimated linear beam. Then, the beam focusing unit 130 with a micro cylindrical lens array focuses the collimated linear beam to form a plurality of focal points. The laser beam 200 scans along the scanning direction Y, thereby exposing the insulating layer 143 to form the groove line 144 of the electrode pattern.
  • the diffuse negative cylindrical lens 123, the collimating cylindrical lens 124, and the beam focusing unit 130 having a micro cylindrical lens array or a micro lens array constitute a line beam scanning device group 180, which is designed as a whole and moves and scans with motion control.
  • the diffuse negative cylindrical lens 123, the collimating cylindrical lens 124, and the beam focusing unit 130 having a micro cylindrical lens array or a micro lens array can be designed to be shorter and lighter, which reduces the load of the scanning component and reduces the difficulty of device processing.
  • the beam focusing unit 130 provides a plurality of focusing points so that the focusing points fall near the insulating layer 143 of the cell 140 to be photolithographically processed.
  • the line beam scanning device group 100 scans and integrates the exposure to form a plurality of focusing lines, thereby exposing the insulating layer 143 to form a groove line 144 of the electrode pattern, and then developing and finally obtaining a group of electrode pattern grooves on the insulating layer.
  • the laser beam 200 is sequentially passed through the diffusion lens 123 and the collimating lens 124 to form a collimated surface beam.
  • the collimated surface beam can be exposed by edge overlap or splicing.
  • a light shielding mask 160 is set to shape the beam to form a square, hexagon or other shape, which is convenient for exposure overlap or splicing of adjacent areas, as shown in FIG. 22 .
  • the light shielding mask 160 is located above the beam focusing unit 130 having a micro-column lens array, so that the collimated surface beam first passes through the light shielding mask and then passes through the beam focusing unit 130.
  • the insulating layer 143 of the cell 140 to be photolithographic is a positive photoresist
  • the micro-column lens array or micro-lens array of the beam focusing unit 130 is focused to form a plurality of focal points, which are located on the side of the insulating layer 143 away from the cell substrate 141, and the distances between the plurality of focal points and the surface of the insulating layer 143 away from the cell substrate 141 are 0.01 mm to 1 mm.
  • a trapezoidal groove with a narrow top and a wide bottom can be formed on the insulating layer 143 to facilitate limiting the growth morphology during the deposition of the electrode material, thereby forming a trapezoidal electrode, improving the bonding force between the electrode and the cell substrate 141, and avoiding blocking the sun's rays from irradiating the cell substrate, thereby improving the light energy utilization rate of the photovoltaic cell.
  • the insulating layer 143 of the cell 140 to be photolithographic is a negative photoresist
  • the micro-column lens array or micro-lens array of the beam focusing unit 130 is focused to form a plurality of focal points, which are located on the side of the insulating layer 143 close to the cell substrate 141, and the distances between the plurality of focal points and the surface of the insulating layer 143 close to the cell substrate 141 are 0.01 mm to 1 mm.
  • a trapezoidal groove with a narrow top and a wide bottom can be formed on the insulating layer 143 to facilitate limiting the growth morphology during the deposition of the electrode material, thereby forming a trapezoidal electrode, improving the bonding force between the electrode and the cell substrate 141, and avoiding blocking the sun's rays from irradiating the cell substrate, thereby improving the light energy utilization rate of the photovoltaic cell.
  • the electrode material may be deposited in the electrode pattern grooves by using a common electroplating process in the art, and the patterned insulating layer and the seed layer located in the projection of the patterned insulating layer may be removed by using a common process in the art, such as an etching process.
  • the electrode material is copper.
  • copper has better conductivity and lower cost than silver paste, and is highly concerned by the photovoltaic industry.
  • the insulating layer 143 is a positive photoresist with a thickness ranging from 1 ⁇ m to 20 ⁇ m.
  • the insulating layer 143 in the exposed area is removed.
  • the steps for making the photovoltaic cell electrode are as follows: first, step S20 is used to form an electrode pattern groove 145 on the insulating layer 143 of the cell 140 to be photoetched, and the seed layer 142 is exposed. Then, step S30 is used to deposit the electrode material 146 in the electrode pattern groove 145 through an electroplating process. Then, the patterned insulating layer 143 and the seed layer 142 located in the projection of the patterned insulating layer 143 are etched away. The cross-sectional area of the photovoltaic cell electrode finally formed is consistent with the shape of the electrode pattern groove 145.
  • the insulating layer 143 is a negative photoresist with a thickness ranging from 1 ⁇ m to 20 ⁇ m.
  • the insulating layer 143 in the exposed area is retained.
  • the steps for making the photovoltaic cell electrode are as follows: first, step S20 is used to form an electrode pattern groove 145 on the insulating layer 143 of the cell 140 to be photoetched, and the seed layer 142 is exposed. Then, step S30 is used to deposit the electrode material 146 in the electrode pattern groove 145 through an electroplating process. Then, the patterned insulating layer 143 and the seed layer 142 located in the projection of the patterned insulating layer 143 are etched away. The cross-sectional area of the photovoltaic cell electrode finally formed is consistent with the shape of the electrode pattern groove 145.
  • the photolithography can be completed in two steps of proximity exposure and beam focusing unit scanning exposure, or it can be completed in one step using beam focusing unit scanning exposure.
  • the cell to be photolithography includes a cell substrate 141, a seed layer 142 located on the cell substrate, and an insulating layer 143 located on the seed layer 142.
  • the process flow is as follows: the main grid line width of the photovoltaic cell is 50 ⁇ m to 3mm, and the first step is to implement the proximity exposure of the photovoltaic cell main grid groove mask in the proximity exposure station. First, make an exposure mask 170. The mask pattern only needs to cover the non-main grid exposure area.
  • the pattern line width setting range is between 50 ⁇ m and 3mm, and the exposure beam 300 is used to implement the groove lithography.
  • the second step is to implement the exposure of the photovoltaic cell sub-grid fine electrode groove in the exposure station of the beam focusing unit 130 to form the electrode pattern groove line 144, and the electrode pattern groove 145 is formed after development.
  • the line width of the sub-grid electrode groove is between 3 ⁇ m and 20 ⁇ m, and the depth is between 1 ⁇ m and 20 ⁇ m.
  • the cell to be photoetched includes a cell substrate 141, a seed layer 142 on the cell substrate, and an insulating layer 143 on the seed layer 142.
  • the insulating layer is a negative photoresist
  • the main grid line width of the photovoltaic cell is 50 ⁇ m to 3mm.
  • the first step is to implement the proximity exposure of the photovoltaic cell main grid groove mask at the proximity exposure station. First, make the exposure mask 170.
  • the mask pattern needs to block the main grid, the secondary grid and the bleeding area around the secondary grid (the secondary grid line width is small, and the proximity exposure line width is greater than 50 ⁇ m.
  • the proximity exposure method cannot directly obtain the fine line width, so the edge area needs to be reserved for correction exposure.
  • the edge area can be on one side or both sides of the secondary grid).
  • the line width of the shielding secondary grid area is set as small as possible, generally set in the range of 50 ⁇ m to 300 ⁇ m.
  • the main grid electrode groove is exposed, and the exposure area 210 is shown in Figure 30.
  • the exposure beam 300 is used to realize the photovoltaic cell main grid 50 ⁇ m to 3mm line width groove lithography.
  • the second step is to expose the fine electrode grooves of the secondary grid of the photovoltaic cell at the scanning exposure station of the beam focusing unit 130.
  • the unexposed area around the secondary grid is corrected for exposure.
  • the correction exposure is performed at least once to eliminate the bleeding on one side of the secondary grid electrode groove; when the bleeding area is on both sides of the secondary grid, the correction exposure is performed at least twice to eliminate the bleeding on both sides of the secondary grid electrode groove, leaving only the line width of the secondary grid.
  • a secondary grid electrode pattern groove with a line width of 3 ⁇ m to 20 ⁇ m and a depth of 1 ⁇ m to 20 ⁇ m is formed.
  • the first step is to use a proximity mask to expose the area outside the secondary grid.
  • the mask pattern needs to block the secondary grid and the bleeding area around the secondary grid (the line width of the secondary grid is small, and the line of the proximity exposure is larger than 50 ⁇ m, which cannot be directly obtained by proximity exposure. Therefore, a bleeding area needs to be left and corrected later.
  • the bleeding area can be on one or both sides of the secondary grid).
  • the line width of the area blocking the secondary grid is set as small as possible, generally set in the range of 50 ⁇ m to 300 ⁇ m.
  • the second step is to expose the fine electrode groove of the secondary grid of the photovoltaic cell in the scanning exposure station of the beam focusing unit.
  • the unexposed area around the secondary grid is corrected for exposure.
  • the correction exposure is performed at least once to eliminate the edge area on one side of the secondary grid electrode groove; when the edge area is on both sides of the secondary grid, the correction exposure is performed at least twice to eliminate the edge areas on both sides of the secondary grid electrode groove, leaving only the secondary grid width.
  • a secondary grid electrode groove 145 with a line width of 3 ⁇ m to 20 ⁇ m and a depth of 3 ⁇ m to 15 ⁇ m is formed.
  • the collimated linear beam 400 is scanned along the Y direction of the length of the cylindrical lens in the micro-column lens array in the beam focusing unit 130, as shown in Figures 32 and 33, respectively.
  • the cell to be photoetched includes a cell substrate 141, a seed layer 142 located on the cell substrate, and an insulating layer 143 located on the seed layer 142.
  • the system can first scan a group of electrode grooves on the cell to be photoetched, and then splice to realize the exposure scanning of another group of photovoltaic cell electrode grooves. It is also possible to complete the exposure scanning of all photovoltaic cell electrode grooves at one time.
  • an overlapping splicing exposure mode can also be used for the scanning area of the photolithography cell 140.
  • 1/2 overlapping exposure can be performed on the scanning area, so that the photolithography cell 140 is exposed twice; of course, more overlapping exposure modes can also be used.
  • the cell to be photoetched is placed on a workpiece conveying platform.
  • a vacuum adsorption device is provided on the top to fix the photovoltaic cells.
  • the workpiece conveying platform can move quickly along the X-axis to accurately position and deliver the photovoltaic cells to be processed.
  • a photovoltaic cell positioning and identification camera and a u/v/w alignment platform are arranged above the above-mentioned workpiece conveying platform to perform position identification and position correction on the placement of the photovoltaic cell.
  • a dual workpiece platform interactive transportation mode can be set.
  • One workpiece platform 310 is working on photolithography, and the other workpiece platform 320 is loading, transferring, and waiting for the cell 140 to be photoetched.
  • the waiting workpiece platform 310 enters the photolithography station, and the other workpiece platform 320 outputs the photovoltaic cell that has completed the photolithography, and at the same time loads, transfers, and waits for the photovoltaic cell.
  • the dual workpiece platforms operate alternately to save the entire operation flow time and improve efficiency.
  • a rotating workpiece platform in order to improve the conveying efficiency of the cell 140 to be photoetched, can be set to work in an alternating manner.
  • the rotating workpiece platform is provided with more than three workstations, the first workpiece platform 410 realizes the solar cell loading action, the second workpiece platform 420 realizes the photovoltaic cell groove photoetching action, and the third workpiece platform 430 realizes the photovoltaic cell output action.
  • the three workpiece platforms are operated alternately and cyclically to save the entire operation flow time and improve efficiency.
  • the above-mentioned method for manufacturing photovoltaic cell electrodes does not require multiple sets of spatial light modulators, projection optical systems and illumination optical systems, so the cost of device development is reduced exponentially; data processing and multi-path overlapping alignment are not required, thereby improving manufacturing reliability and efficiency; and photolithography of electrode pattern grooves with higher aspect ratios, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2, can be achieved, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • a photovoltaic cell electrode according to an embodiment of the present invention is manufactured by using any of the above-mentioned methods for manufacturing a photovoltaic cell electrode.
  • the above-mentioned method for manufacturing photovoltaic cell electrodes can realize photolithography of electrode pattern grooves with a relatively high aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2, thereby obtaining relatively high-quality photovoltaic cell electrodes.
  • a photovoltaic cell according to one embodiment includes the photovoltaic cell electrode described above.
  • the photovoltaic cell of the technical solution of the present invention includes the above-mentioned photovoltaic cell electrode. Due to the effect of the beam focusing unit, it is possible to achieve photolithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and an aspect ratio of 0.3 to 2, thereby achieving fine electrode pattern grooves, making the photovoltaic cell of the present invention conducive to wide application.
  • a photovoltaic cell according to one embodiment includes the photovoltaic cell sheet described above.
  • the photovoltaic cell of the technical solution of the present invention includes the above-mentioned photovoltaic cell sheet, and the above-mentioned photovoltaic cell sheet includes the above-mentioned photovoltaic cell sheet electrode. Due to the effect of the beam focusing unit, it is possible to achieve photolithography of electrode pattern grooves with a higher aspect ratio, such as 3 ⁇ m to 20 ⁇ m line width, 1 ⁇ m to 20 ⁇ m depth, and aspect ratio of 0.3 to 2, thereby achieving fine electrode pattern grooves, making the photovoltaic cell of the present invention conducive to wide application.

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Abstract

本发明涉及一种光伏电池片电极及其制作方法和制作装置、以及应用。光伏电池片电极的制作装置包括激光源、准直光束产生单元和光束聚焦单元；准直光束产生单元位于激光源的出光侧，用于将激光源射出的激光束转换成准直光束并投射至光束聚焦单元；光束聚焦单元位于准直光束产生单元的出光侧，用于将准直光束聚焦至待光刻电池片上。应用本发明的制作装置制作光伏电池片电极时，不需要多组空间光调制器、投影光学系统和照明光学系统，因此装置研制成本成倍下降；不需要数据处理和多路光路重叠对准，因而提升了制作可靠性和效率；可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。

Description

光伏电池片电极及其制作方法和制作装置、以及应用 技术领域
本发明涉及光伏电池技术领域，特别是涉及一种光伏电池片电极及其制作方法和制作装置、以及应用。
背景技术
随着全球向碳中和目标的实施，光伏发电作为新能源的重要来源之一，将发挥越来越重要的作用。金属化工艺是光伏电池片电极制造流程中的必要步骤，用于制作光伏电池片的电极，实现光电转换的电流输出。金属化工艺的电极线宽对于光伏电池片的光电转换效率、制造成本具有重要影响，银浆材料成本与硅片材料成本相当，在整个电池片制造中成本占比较高。传统的光伏电池片电极的金属化工艺是，采用丝网印刷导电银浆，再进行高温烧结的技术方案。如沿用传统的银浆金属化工艺，逐年升高的光伏电池片产能建设，对于银的需求也将大幅度增长，全球银矿开采量也将难以满足这样巨大的银用量需求。金属化工艺中，减少用银用量或者用其他非贵金属替代银，是解决光伏电池片电极制作的重要方向。
为了解决上述问题，电镀技术作为新型的电极制备方法，越来越广泛的被研究。其工艺流程为：在电池片基底上制备种子层，在种子层上覆盖绝缘层，在绝缘层上制备电极图形沟槽，沟槽露底至种子层，通过电镀在沟槽底部的种子层上沉积电极材料，通过蚀刻工艺去除绝缘层和种子层，最终形成精细光伏电池片电极。由于电镀工艺中的电极生长各向同性，露底沟槽应要有一定深宽比，否则，随着电镀层增高，在光伏电池片电极上方形成“大头针”效应，导致光伏电池片电极上部的线宽增大、底部附着力变差。为了获得更优质的光伏电池片电极，需要光刻一定深度的电极图形沟槽，以限制电镀时光伏电池片电极生长的形貌。
为制作小于20μm线宽的有一定高宽比的精细电极，需要有寻找一种高效、精密的光刻方法。传统的光刻手段为投影光刻系统和PCB多光学头无掩模光刻系统、以及接触式或者接近式光刻。其中，对于投影光刻系统和PCB多光学头无掩模光刻系统，一般地，空间光调制器(DMD)单元像素约10μm，为获得10μm线宽的光刻沟槽，已有光刻机中投影光学系统缩微倍数一般在2～5倍，如光刻210mmx105mm电极面积，已有光刻机需安装8～16组光学头(包括空间光调制器、投影光学系统和照明光学系统)。导致设备价格高、运行成本高，同时光刻图形化的效率偏低。而对于接触式或者接近式光刻，由于掩膜直边衍射效应，线宽大于50μm，难以光刻线宽小于20μm、深度大于10μm的沟槽。
发明内容
基于此，有必要提供一种低成本且高效率的能够实现高深宽比的光伏电池片电极及其制作方法和制作装置、以及应用。
一种光伏电池片电极的制作装置，包括激光源、准直光束产生单元和光束聚焦单元；
所述准直光束产生单元位于所述激光源的出光侧，用于将所述激光源射出的激光束转换成准直光束并投射至所述光束聚焦单元；
所述光束聚焦单元位于所述准直光束产生单元的出光侧，用于将准直光束聚焦至待光刻电池片上。
应用本发明上述技术方案的光伏电池片电极的制作装置制作光伏电池片电极时，不需要多组空间光调制器、投影光学系统和照明光学系统，因此装置研制成本成倍下降；不需要数据处理和多路光路重叠对准，因而提升了制作可靠性和效率；可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
在一个可行的实现方式中，所述光束聚焦单元具有微柱透镜阵列或者微透镜阵列，所述微柱透镜阵列或者所述微透镜阵列的透镜面朝向或者背向所述待光刻电池片。
在一个可行的实现方式中，所述微柱透镜阵列与所述待光刻电池片的位置一一对应，所述微柱透镜阵列与所述待光刻电池片的副栅的周期相同。
在一个可行的实现方式中，所述微柱透镜阵列的周期为0.1mm～3mm，所述微柱透镜阵列的数值孔径为0.005～0.15。
在一个可行的实现方式中，所述微柱透镜阵列包括若干沿行方向或者列方向周期排列的柱透镜，相邻两个所述柱透镜之间的间距为0～0.2mm。
在一个可行的实现方式中，所述光束聚焦单元为衍射光学元件，所述衍射光学元件的衍射面朝向所述准直光束产生单元。
在一个可行的实现方式中，所述光束聚焦单元包括沿出光光路依次设置的第一微柱透镜阵列器件和第二微柱透镜阵列器件，所述第一微柱透镜阵列器件与所述第二微柱透镜阵列器件共焦放置，所述第一微柱透镜阵列器件的透镜面与所述第二微柱透镜阵列器件的透镜面相对，且所述第一微柱透镜阵列器件的焦距大于所述第二微柱透镜阵列器件的焦距。
在一个可行的实现方式中，所述光束聚焦单元还包括用以遮挡杂散光或者待光刻电池片的主栅区域的第一遮光掩膜，所述第一遮光掩膜位于所述第一微柱透镜阵列器件与所述第二微柱透镜阵列器件的共焦焦面位置，所述第一遮光掩膜设有若干个开孔，所述若干个开孔与所述第一微柱透镜阵列器件与所述第二微柱透镜阵列器件的若干个共焦焦点的位置一一对 应。
在一个可行的实现方式中，所述准直光束为准直线光束或者准直面光束。
在一个可行的实现方式中，所述准直光束产生单元包括沿出光光路依次设置的光束传输组件和至少一组光束扩散组件，所述光束扩散组件包括沿出光光路依次设置的扩散透镜和准直镜；
所述扩散透镜位于所述光束传输组件的出光侧，用以将所述光束传输组件形成的激光束扩散至所述准直镜上；所述准直镜位于所述扩散透镜的出光侧，用以将通过所述扩散透镜的激光束形成平行线光束投射至所述光束聚焦单元上。
在一个可行的实现方式中，所述光束传输组件包括：
振镜，位于所述激光源的出光侧，用于改变所述激光源射出的激光束的方向；以及
场镜，位于所述振镜的出光侧，用于将所述振镜形成的激光束聚焦到所述扩散透镜上。
在一个可行的实现方式中，所述光束传输组件包括转镜，所述转镜用以改变所述激光源射出的激光束的方向并将所述激光束投射至所述扩散透镜上。
在一个可行的实现方式中，所述光束传输组件包括至少一个反射镜，所述反射镜用以改变所述激光源射出的激光束的方向并将所述激光束投射至所述扩散透镜上。
在一个可行的实现方式中，所述准直光束产生单元还包括光束整形组件，所述光束整形组件位于所述激光源与所述光束传输组件之间。
在一个可行的实现方式中，所述光伏电池片电极的制作装置还包括用以遮挡杂散光的第二遮光掩膜，所述第二遮光掩膜位于所述准直光束产生单元与所述光束聚焦单元之间，或者位于所述光束聚焦单元与所述待光刻电池片之间。
一种光伏电池片电极的制作方法，包括如下步骤：
提供上述任一的制作装置和待光刻电池片，所述待光刻电池片包括电池片基底、位于所述电池片基底上的种子层以及位于所述种子层上的绝缘层；
将所述待光刻电池片置于所述光束聚焦单元远离所述准直光束产生单元的一侧，采用所述制作装置对所述绝缘层进行光刻，以在所述绝缘层上形成电极图形沟槽，且暴露出所述种子层，得到图形化的绝缘层；以及
通过电镀工艺在所述电极图形沟槽内沉积电极材料，之后去除所述图形化的绝缘层以及位于所述图形化的绝缘层投影内的种子层，得到光伏电池片电极。
采用上述的光伏电池片电极的制作方法，不需要多组空间光调制器、投影光学系统和照明光学系统，因此装置研制成本成倍下降；不需要数据处理和多路光路重叠对准，因而提升了制作可靠性和效率；可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2 的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
在一个可行的实现方式中，所述绝缘层为正性光刻胶，所述光束聚焦单元的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，所述若干个聚焦点位于所述绝缘层远离所述电池片基底的一侧，且所述若干个聚焦点与所述绝缘层远离所述电池片基底的表面之间的距离均为0.01mm～1mm。
在一个可行的实现方式中，所述绝缘层为负性光刻胶，所述光束聚焦单元的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，所述若干个聚焦点位于所述绝缘层靠近所述电池片基底的一侧，且所述若干个聚焦点与所述绝缘层靠近所述电池片基底的表面之间的距离均为0.01mm～1mm。
在一个可行的实现方式中，所述绝缘层的厚度为1μm～20μm。
在一个可行的实现方式中，所述电极材料为铜。
一种光伏电池片电极，采用上述任一的光伏电池片电极的制作方法制作得到。
采用上述的光伏电池片电极的制作方法，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
一种光伏电池片，包括上述的光伏电池片电极。
本发明技术方案的光伏电池片包括上述光伏电池片电极，由于光束聚焦单元的作用，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而实现精细的电极图形沟槽，使得本发明的光伏电池片有利于广泛应用。
一种光伏电池，包括上述的光伏电池片。
本发明技术方案的光伏电池包括上述光伏电池片，上述光伏电池片包括上述光伏电池片电极，由于光束聚焦单元的作用，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而实现精细的电极图形沟槽，使得本发明的光伏电池有利于广泛应用。
附图说明
图1为本发明第一实施方式的光伏电池片电极的制作装置的示意图；
图2为本发明另一实施方式的光束聚焦单元的微柱透镜阵列的示意图；
图3为本发明一实施方式的光束聚焦单元中微柱透镜阵列周期与待光刻电池片的副栅周期对应的示意图；
图4为光学传递函数与每毫米线对数的关系图；
图5为光学传递函数与焦点偏移的关系图；
图6为本发明第二实施方式的光束聚焦单元的示意图；
图7为本发明第三实施方式的光束聚焦单元的示意图；
图8为本发明另一实施方式的准直镜的示意图；
图9为本发明第二实施方式的光伏电池片电极的制作装置的示意图；
图10为本发明第三实施方式的光伏电池片电极的制作装置的示意图；
图11为本发明第四实施方式的光伏电池片电极的制作装置的示意图；
图12为本发明第五实施方式的光伏电池片电极的制作装置的示意图；
图13为本发明第六实施方式的光伏电池片电极的制作装置的示意图；
图14为本发明第七实施方式的光伏电池片电极的制作装置的示意图；
图15为本发明一实施方式的光伏电池片电极的制作装置中第二遮光掩膜板的位置示意图；
图16为本发明一实施方式的光伏电池片电极的制作装置中第二遮光掩膜板的另一位置示意图；
图17为本发明一实施方式的光伏电池片电极的制作方法的流程图；
图18为采用一实施方式的光伏电池片电极的制作装置对待光刻电池片进行图形化的示意图；
图19为采用另一实施方式的光伏电池片电极的制作装置对待光刻电池片进行图形化的示意图；
图20为采用另一实施方式的光伏电池片电极的制作装置对待光刻电池片进行图形化的示意图；
图21为采用另一实施方式的光伏电池片电极的制作装置对待光刻电池片进行图形化的示意图；
图22为采用图21的制作装置进行图形化的过程中若干待光刻电池片之间搭接方式的示意图；
图23为本发明一实施方式的光束聚焦单元的聚焦点与绝缘层之间的位置示意图；
图24为本发明另一实施方式的光束聚焦单元的聚焦点与绝缘层之间的位置示意图；
图25为本发明一实施方式的光伏电池片电极的制作方法的流程图；
图26为本发明另一实施方式的光伏电池片电极的制作方法的流程图；
图27为本发明一实施方式的光伏电池片电极的制作过程的侧面示意图；
图28为本发明一实施方式的光伏电池片电极的制作过程的平面示意图；
图29为本发明另一实施方式的光伏电池片电极的制作过程的侧面示意图；
图30为本发明另一实施方式的光伏电池片电极的制作过程的平面示意图；
图31为本发明另一实施方式的光伏电池片电极的制作过程的平面示意图；
图32为本发明一实施方式的准直线光束对光束聚焦单元进行扫描的示意图；
图33为本发明另一实施方式的准直线光束对光束聚焦单元进行扫描的示意图；
图34为本发明一实施方式的光伏电池片电极的制作过程中的扫描示意图；
图35为本发明一实施方式的光伏电池片电极的制作设备的示意图；
图36为本发明另一实施方式的光伏电池片电极的制作设备的示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本发明。但是本发明能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本发明内涵的情况下做类似改进，因此本发明不受下面公开的具体实施例的限制。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本发明。本文所使用的术语“及/或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参见图1，本发明第一实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。
其中，激光源110为紫外或蓝光激光器，光源波长在325nm～450nm之间，功率在1瓦～100瓦之间。优选地，光源波长为405nm、395nm、365nm、355nm或者325nm。
其中，准直光束产生单元120位于激光源110的出光侧，用于将激光源110射出的激光束转换成准直光束并投射至光束聚焦单元130。本实施方式中，准直光束可以是发散角较小(例如0.2°以下)的准直线光束。
其中，光束聚焦单元130位于准直光束产生单元120的出光侧，用于将准直线光束聚焦至待光刻电池片140上。其中，待光刻电池片140包括电池片基底141、位于电池片基底141 上的种子层142以及位于种子层142上的绝缘层143。种子层142能够增加电极材料与电池片基底141之间的附着力。绝缘层143的材质为感光材料，例如为光刻胶或者感光油墨等。
如图1所示，本实施方式中，准直光束产生单元120射出的准直线光束垂直照射在光束聚焦单元130上表面，被光束聚焦单元130聚焦形成若干个聚焦点，这些若干个聚焦点正好落在待光刻电池片140的绝缘层143附近位置，在绝缘层143上形成微沟槽。通过准直线光束的扫描曝光，若干聚焦点积分曝光形成若干沟槽线，显影之后即得电极图形沟槽。如此，一次性完成多组或全部微沟槽光刻，实现光伏电池片精密电极的图形化的高效制作。采用本实施方式的光伏电池片电极的制作装置100可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
在前述实施方式的基础上，光束聚焦单元130具有微柱透镜阵列131，微柱透镜阵列131的透镜面背向待光刻电池片140。微柱透镜阵列131能够对准直线光束进行聚焦形成若干个聚焦点，这些聚焦点落在绝缘层143附近位置，积分曝光形成沟槽线，显影之后得到电极图形沟槽。
当然，光束聚焦单元130的微透镜阵列131的透镜面亦可以朝向待光刻电池片140，如图2所示。其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。此时微透镜阵列131亦能够对准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成沟槽线。
其中，微柱透镜阵列131的材料为透明材料，如玻璃或者树脂；优选采用高透紫外或蓝紫波长的光学材料，如石英玻璃或光学塑料。上述柱透镜阵列131可以通过UV压印方式转印到基板上，或者直接刻蚀到基板上。
在前述实施方式的基础上，微柱透镜阵列131与待光刻电池片140的副栅的位置一一对应，微柱透镜阵列131与待光刻电池片140的副栅的周期相同。这样能够通过一次光刻得到整片光伏电池片的电极图形沟槽，提高光伏电池片电极的制作效率。
当然，本发明的制作装置中，微柱透镜阵列131的周期还可以与待光刻电池片140的多个副栅周期对应，如图3所示。完成一组光伏电池片副栅的光刻后，水平移动具有微柱透镜阵列的光束聚焦单元相应的距离，即可实现另一组光伏电池片副栅的光刻。
在前述实施方式的基础上，微柱透镜阵列131的周期为0.1mm～3mm，微柱透镜阵列131的数值孔径为0.005～0.15。以355nm激光波长为例，如聚焦微柱透镜NA＝0.1,根据成像分辨率公式：0.61*λ/NA＝2.17μm，焦深0.61*λ/(NA^2)～22μm；如聚焦微柱透镜NA＝0.013，成像分辨率为：0.61*λ/NA＝16.7μm，焦深～1.3mm；综合考虑曝光显影等因素，采用本发明光伏电池片电极的制作装置，可轻松得到3μm～20μm，高深宽比沟槽槽型的光刻。
其中，光学传递函数(Modulus of the OTF)分别与每毫米线对数(Spatial Frequency in cycles per mm)和焦点偏移(Focus shift in Millimeters)的关系分别如图4和图5所示。我们需要光学传递函数大于0.5的对应每毫米线对数数据，从图4可得对应的每毫米线对数是1～50，每毫米线对数对应的周期计算如下：以线对数为50为例，线宽就是1÷(50×2)＝0.01mm，即10微米。图5同理，也是取光学传递函数大于0.5的对应焦点偏移数据。
以10μm电极的图形化为例，聚焦微柱透镜阵列设计的数值孔径NA＝0.03，焦深～250μm。相比，常规30μm副栅电极相同遮光面积情况下，本发明的光伏电池片电极的排列密度可增加到3倍。这样能够在遮光面积相同情况下，电极排列密度高，光生电子以最短路径被电极收集，提高光电转换效率；电极收集光生电子分散，每根电极上电流小；电极线宽小，相同导电率情况下，电极线条高度可降低，绝缘层图层厚度薄，曝光时间短，相同激光能量下，生产效率高；绝缘层图层厚度薄，节省电池片绝缘层材料用量。
在前述实施方式的基础上，微柱透镜阵列131包括若干沿行方向或者列方向周期排列的柱透镜，相邻两个柱透镜之间的间距为0～0.2mm。其中，当相邻两个柱透镜之间的间距为0时，若干柱透镜紧密排列。本实施方式能够提高激光束的光能利用率。
进一步需要说明的是，本发明的光伏电池片电极的制作装置中，光束聚焦单元中的微柱透镜阵列还可以为微透镜阵列。其中，微透镜阵列的透镜面朝向或者背向待光刻电池片。进一步地，微透镜阵列的材料为透明材料，如玻璃或者树脂；优选采用高透紫外或蓝紫波长的光学材料，如石英玻璃或光学塑料。
采用包括微透镜阵列的光伏电池片电极的制作装置制作光伏电池片电极时，微透镜阵列能够对准直线光束进行聚焦形成若干个聚焦点，准直光束产生单元与光束聚焦单元设计为一个整体，与待光刻电池片保持相对移动，随运动控制移动扫描，从而对绝缘层进行曝光形成沟槽线，之后显影后在绝缘层上形成电极图形沟槽。
此外需要说明的是，本发明的光伏电池片电极的制作装置中，光束聚焦单元不限于上述实施方式的单个微柱透镜阵列或者微透镜阵列，还可以为其他能够起到聚焦光束作用的器件。
请参见图6，本发明第二实施方式的光束聚焦单元130为衍射光学元件(Diffractive Optical Elements，DOE)，衍射光学元件的衍射面朝向准直光束产生单元，如图6所示。其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。此时光束聚焦单元130亦能够对准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
请参见图7，本发明第三实施方式的光束聚焦单元130包括沿出光光路依次设置的第一微柱透镜阵列器件131和第二微柱透镜阵列器件132，第一微柱透镜阵列器件131与第二微 柱透镜阵列器件132共焦放置，第一微柱透镜阵列器件131的透镜面与第二微柱透镜阵列器件132的透镜面相对，且第一微柱透镜阵列器件131的焦距大于第二微柱透镜阵列器件132的焦距。
第三实施方式的光束聚焦单元130适用于待光刻电池片140的绝缘层为负胶类型，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，位于上方的第一微柱透镜阵列器件131收集准直线光束聚焦后被下方的第二微柱透镜阵列器件132准直照射到绝缘层143表面，形成具有副栅周期间隔的准直宽光束曝光。
在前述实施方式的基础上，光束聚焦单元130还包括用以遮挡杂散光或者待光刻电池片的主栅区域的第一遮光掩膜133，第一遮光掩膜133位于第一微柱透镜阵列器件131与第二微柱透镜阵列器件132的共焦焦面位置，第一遮光掩膜133设有若干个开孔，若干个开孔与第一微柱透镜阵列器件131和第二微柱透镜阵列器件132的若干个共焦焦点的位置一一对应。第一遮光掩膜133能够遮挡散光或者待光刻电池片的主栅区域，避免光束聚焦到电极图形沟槽区域，提高光刻的精度。
请参见图1，在前述第一实施方式的光伏电池片电极的制作装置100的基础上，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。
其中，扩散透镜123位于光束传输组件121的出光侧，用以将光束传输组件121形成的激光束扩散至准直镜124上。准直镜124位于扩散透镜123的出光侧，用以将通过扩散透镜123的激光束形成平行线光束投射至光束聚焦单元130上。其中，准直镜124与扩散透镜123共焦设置。
其中，扩散透镜123为扩散负柱透镜，扩散负柱透镜的焦点设置于准直镜124共焦。准直镜124为准直柱透镜或者准直透镜。准直柱透镜或者准直透镜能够形成平行线光束投射至光束聚焦单元130上，之后光束聚焦单元130对准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
需要说明的是，在其他实施方式中，扩散透镜还可以为扩散正柱透镜，当扩散透镜为扩散正柱透镜时，扩散正柱透镜的实焦点与准直镜共焦。
此外，准直镜124还可以为菲涅尔准直柱透镜，如图8所示。其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。此时菲涅尔准直柱透镜能够形成平行线光束投射至光束聚焦单元130上，之后光束聚焦单元130对准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
进一步地，上述第一实施方式的光伏电池片电极的制作装置100中，光束传输组件121 包括振镜125和场镜126。其中，振镜125位于激光源110的出光侧，用于改变激光源110射出的激光束的方向。其中，场镜126位于振镜125的出光侧，用于将振镜125形成的激光束聚焦到扩散透镜123上。
本实施方式中，光束扩散组件122为一组，但需要说明的是，本发明的光伏电池片电极的制作装置中，光束扩散组件的组数不限于一组，还可以为两组或者两组以上，具体可以根据从光束传输组件出射的激光束进行设置。
请参见图9，本发明第二实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122。其中，光束传输组件121包括沿出光光路依次设置的振镜125和场镜126，光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。
如图9所示，采用第二实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，激光束经由光束传输组件121之后实现多分光束，射出两束垂直照射的激光束，分别对应设置两组光束扩散组件122，这两组光束扩散组件122紧密排列，能够产生多束准直线光束照射光束聚焦单元130上，从而提高工作效率。
需要说明的是，本发明的光伏电池片电极的制作装置中，光束传输组件不限于上述两种实施方式，还可以为其他结构的光束传输组件。
请参见图10，本发明第三实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，其中光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。进一步地，光束传输组件121包括一个反射镜，反射镜用以改变激光源110射出的激光束的方向并将激光束投射至扩散透镜123上。
如图10所示，采用第三实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，激光源110射出的激光束依次经由反射镜和光束扩散组件122形成准直线光束，之后光束聚焦单元130对上述准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
需要说明的是，本发明的光束传输组件为反射镜时，反射镜的个数不限，还可以为两个或者两个以上，可以设置为一组激光源对应多个反射镜，亦可以设置为多组激光源对应多个 反射镜。
请参见图11，本发明第四实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，其中光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。进一步地，光束传输组件121包括四个沿出光光路排列的反射镜，每个反射镜用以改变激光源110射出的激光束的方向并将激光束投射至对应设置的扩散透镜123上。具体的，本实施方式中由左至右前三个反射镜为透镜反射镜或者其他非全反射镜，最右侧的反射镜为全射镜，这样当激光束依次穿过前三个反射镜时，部分激光束被反射镜反射后投射至扩散透镜123上，其余部分激光束可穿过前面反射镜后投射至后面相邻的反射镜上，直至激光束照射到最右侧的全射镜上之后，全部反射至位于最右侧全射镜下方的扩散透镜123上。
如图11所示，采用第四实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，激光源110射出的激光束依次经由多个反射镜和对应的多组光束扩散组件122形成多束准直线光束，之后光束聚焦单元130对上述多束准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。本实施方式中，一组激光源110能够扫描实现多分光束，采用多组光束扩散组件122形成多束准直线光束，从而提高工作效率。
请参见图12，本发明第五实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，其中光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。进一步地，本实施方式中，激光源110的个数为四个，且准直光束产生单元120和光束聚焦单元130均对应设置为四组。其中，每个光束传输组件121包括一个反射镜，每个反射镜用以改变激光源110射出的激光束的方向并将激光束投射至对应设置的扩散透镜123上。
如图12所示，采用第五实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，每个激光源110射出的激光束依次经由对应设置的反射镜和对应的多组光束扩散组件122形成多束准直线光束，之后光束聚焦单元130对上述多束准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。本实施方式中，采用多组激光源100与多组准直光束产生单元120 和光束聚焦单元130同时产生多束准直线光束，通过制作装置的整体移动实现对准直线光束的扫描，能够使用小功率激光源来提高工作效率。
请参见图13，本发明第六实施方式的光伏电池片电极的制作装置100包括激光源110、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，其中光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。进一步地，光束传输组件121包括转镜，转镜用以改变激光源110射出的激光束的方向并将激光束投射至对应设置的扩散透镜123上。
如图13所示，采用第六实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，激光源110射出的激光束依次经由转镜和光束扩散组件122形成多束准直线光束，之后光束聚焦单元130对上述多束准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
请参见图14，本发明第七实施方式的光伏电池片电极的制作装置100包括沿出光光路依次设置的激光源110、光束整形组件150、准直光束产生单元120和光束聚焦单元130。其中，准直光束产生单元120包括沿出光光路依次设置的光束传输组件121和光束扩散组件122，其中光束扩散组件122包括沿出光光路依次设置的扩散透镜123和准直镜124。进一步地，光束传输组件121包括一个反射镜，反射镜用以改变激光源110射出的激光束的方向并将激光束投射至扩散透镜123上。
其中，光束整形组件150可对激光高斯光束整形或匀光处理，使准直线光束边缘与中心能量一致。光束整形组件150可是π形整形器件，也可以是微透镜阵列组实现的匀光器件，或者是通过激光束扩散，取中心光束均匀部分实现，或者是上述各器件或者方法的组合。
如图14所示，采用第七实施方式的光伏电池片电极的制作装置100制作光伏电池片电极时，将待光刻电池片140置于光束聚焦单元130的正下方，其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。光刻时，激光源110射出的激光束依次经由光束整形组件150、反射镜和光束扩散组件122形成准直线光束，之后光束聚焦单元130对上述准直线光束进行聚焦形成若干个聚焦点，从而对绝缘层143进行曝光形成电极图形的沟槽线。
在前述各实施方式的基础上，光伏电池片电极的制作装置还包括用以遮挡杂散光的第二遮光掩膜160，第二遮光掩膜160位于准直光束产生单元与光束聚焦单元130之间，如图15所示；或者位于光束聚焦单元130与待光刻电池片140之间，如图16所示。其中，准直光束产生单元包括光束扩散组件122，光束扩散组件122包括沿出光光路依次设置的扩散透镜123 和准直镜124。其中，光束聚焦单元130具有微柱透镜阵列131。其中，待光刻电池片140包括依次层叠的电池片基底141、种子层142和绝缘层143。
本实施方式中，第二遮光掩膜160能够遮挡住微柱透镜阵列131中相邻两个微柱透镜之间的空隙，避免杂散光；也可以遮挡住准直光束的边缘光束，使光束能量均匀。
本发明的光伏电池片电极的制作装置可以同时实现光伏电池片精细副栅电极和宽主栅电极的制作。本发明的光伏电池片电极的制作装置中，前述任意实施方式的准直光束产生单元与任意实施方式的光束聚焦单元可以排列组合使用。
应用本发明上述技术方案的光伏电池片电极的制作装置制作光伏电池片电极时，不需要多组空间光调制器、投影光学系统和照明光学系统，因此装置研制成本成倍下降；不需要数据处理和多路光路重叠对准，因而提升了制作可靠性和效率；可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
请参见图17，本发明一实施方式的光伏电池片电极的制作方法，包括如下步骤：
S10、提供上述任一的制作装置和待光刻电池片，待光刻电池片包括电池片基底、位于电池片基底上的种子层以及位于种子层上的绝缘层。
其中，电池片基底例如可以为硅片。可以采用本领域常用方法在电池片基底上形成种子层以及在种子层上形成绝缘层。
在一个可行的实现方式中，绝缘层的厚度为1μm～20μm。
S20、将待光刻电池片置于光束聚焦单元远离准直光束产生单元的一侧，采用制作装置对绝缘层进行光刻，以在绝缘层上形成电极图形沟槽，且暴露出种子层，得到图形化的绝缘层。
请参见图18～图21，采用四种实施方式的制作装置进行待光刻电池片140的图形化，其中，待光刻电池片140包括电池片基底141、位于电池片基底上的种子层142以及位于种子层142上的绝缘层143。
请参见图18，一实施方式中，激光束200依次经由扩散负柱透镜123和准直柱透镜124形成准直线光束，之后具有微柱透镜阵列的光束聚焦单元130对上述准直线光束进行聚焦形成若干个聚焦点，激光束200沿扫描方向Y进行扫描，从而对绝缘层143进行曝光形成电极图形的沟槽线144。
请参见图19，另一实施方式中，激光束200依次经由扩散正柱透镜123和准直柱透镜124形成准直线光束，之后具有微柱透镜阵列的光束聚焦单元130对上述准直线光束进行聚焦形成若干个聚焦点，激光束200沿扫描方向Y进行扫描，从而对绝缘层143进行曝光形成电极图形的沟槽线144。
请参见图20，另一实施方式中，扩散负柱透镜123、准直柱透镜124以及具有微柱透镜阵列或者微透镜阵列的光束聚焦单元130组成线光束扫描器件组180，设计成一个整体，随运动控制移动扫描。其中，扩散负柱透镜123、准直柱透镜124以及具有微柱透镜阵列或者微透镜阵列的光束聚焦单元130各自的长度可以设计更短更轻巧，减轻扫描组件负载，减少器件加工难度。
本实施方式中，光束聚焦单元130提供若干聚焦点，使得聚焦点落在待光刻电池片140的绝缘层143附近，线光束扫描器件组100扫描积分曝光，形成若干聚焦线，从而对绝缘层143进行曝光形成电极图形的沟槽线144，之后通过显影并最终在绝缘层上得到一组电极图形沟槽。
请参见图21，另一实施方式中，激光束200依次经由扩散透镜123和准直透镜124形成准直面光束，为了实现曝光拼接沟槽，上述准直面光束可采用边缘搭接或拼接方式曝光。在曝光时设置遮光掩膜版160，用于整形光束，形成方形、六边形或其他形状，便于相邻区域的曝光搭接或拼接，如图22所示。遮光掩膜版160位于具有微柱透镜阵列的光束聚焦单元130上方，使准直面光束先穿过遮光掩膜版，再通过光束聚焦单元130。
请参见图23，在一个可行的实现方式中，待光刻电池片140的绝缘层143为正性光刻胶，光束聚焦单元130的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，若干个聚焦点位于绝缘层143远离电池片基底141的一侧，且若干个聚焦点与绝缘层143远离电池片基底141的表面之间的距离均为0.01mm～1mm。此时可以在绝缘层143上形成上窄下宽的梯形凹槽，以利于电极材料沉积时限制生长形貌，从而形成梯形电极，提高电极与电池片基底141的结合力，同时避免阻挡太阳光线照射到电池片基底，提高光伏电池片的光能利用率。
请参见图24，在一个可行的实现方式中，待光刻电池片140的绝缘层143为负性光刻胶，光束聚焦单元130的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，若干个聚焦点位于绝缘层143靠近电池片基底141的一侧，且若干个聚焦点与绝缘层143靠近电池片基底141的表面之间的距离均为0.01mm～1mm。此时可以在绝缘层143上形成上窄下宽的梯形凹槽，以利于电极材料沉积时限制生长形貌，从而形成梯形电极，提高电极与电池片基底141的结合力，同时避免阻挡太阳光线照射到电池片基底，提高光伏电池片的光能利用率。
S30、通过电镀工艺在电极图形沟槽内沉积电极材料，之后去除图形化的绝缘层以及位于图形化的绝缘层投影内的种子层，得到光伏电池片电极。
步骤S30中，可以采用本领域常用电镀工艺在电极图形沟槽内沉积电极材料，以及采用本领域常用工艺去除图形化的绝缘层以及位于图形化的绝缘层投影内的种子层，例如刻蚀工艺。
在一个可行的实现方式中，电极材料为铜。电极材料为铜时，铜具有比银浆更优异的导电性和更低的成本，受光伏产业高度关注。
请参见图25，在一个可行的实现方式中，绝缘层143为正性光刻胶，光刻胶厚度范围1μm～20μm之间，其曝光区域的绝缘层143去除。制作光伏电池片电极的步骤为：首先采用步骤S20在待光刻电池片140的绝缘层143上形成电极图形沟槽145，且暴露出种子层142，之后采用步骤S30通过电镀工艺在电极图形沟槽145内沉积电极材料146，之后蚀刻去除图形化的绝缘层143以及位于图形化的绝缘层143投影内的种子层142，最终形成的光伏电池片电极的截面积与电极图形沟槽145的形状一致。
请参见图26，在一个可行的实现方式中，绝缘层143为负性光刻胶，光刻胶厚度范围1μm～20μm之间，其曝光区域的绝缘层143保留。制作光伏电池片电极的步骤为：首先采用步骤S20在待光刻电池片140的绝缘层143上形成电极图形沟槽145，且暴露出种子层142，之后采用步骤S30通过电镀工艺在电极图形沟槽145内沉积电极材料146，之后蚀刻去除图形化的绝缘层143以及位于图形化的绝缘层143投影内的种子层142，最终形成的光伏电池片电极的截面积与电极图形沟槽145的形状一致。
本发明中，依据选择绝缘层的性质和光伏电池片工艺，可以分成接近式曝光和光束聚焦单元扫描曝光两步光刻完成，也可使用光束聚焦单元扫描曝光一步完成。
请参见图27和图28，在一个可行的实现方式中，待光刻电池片包括电池片基底141、位于电池片基底上的种子层142以及位于种子层142上的绝缘层143，上述绝缘层采用正胶类型时，其工艺流程为：光伏电池片主栅线宽50μm～3mm，第一步在接近式曝光工位实现光伏电池片主栅沟槽掩膜接近式曝光。首先制作曝光掩膜版170，掩膜图形只需要遮挡非主栅曝光区域，图形线宽设置范围50μm～3mm之间，采用曝光束300实现沟槽光刻。第二步在光束聚焦单元130曝光工位实现光伏电池片副栅精细电极沟槽曝光，形成电极图形沟槽线144，显影之后形成电极图形沟槽145。其中，副栅电极沟槽线宽在3μm～20μm，深度1μm～20μm之间。
请参见图29和图30，在一个可行的实现方式中，待光刻电池片包括电池片基底141、位于电池片基底上的种子层142以及位于种子层142上的绝缘层143，上述绝缘层采用负胶类型时，其工艺流程为：
光伏电池片主栅线宽50μm～3mm，第一步在接近式曝光工位实现光伏电池片主栅沟槽掩膜接近式曝光。首先制作曝光掩膜版170，掩膜图形需要遮挡主栅、副栅及副栅周边出血区域(副栅线宽较小，而接近式曝光线宽大于50μm，采用接近式曝光的方式不能直接得到精细线宽，因此需留边缘区域修正曝光，边缘区域可在副栅的一侧或两侧)。为了提高副栅修正曝 光效率，遮挡副栅区域线宽尽可能设置较小，一般设置在50μm～300μm范围。进行主栅电极沟槽曝光，曝光区域210如图30所示，采用曝光束300实现光伏电池片主栅50μm～3mm线宽沟槽光刻。
第二步在光束聚焦单元130扫描曝光工位实现光伏电池片副栅精细电极沟槽曝光。通过微柱透镜阵列曝光与平台移动，对副栅周边未曝光区域进行修正曝光，当出血区域为副栅的一侧时，修正曝光至少一次，消除副栅电极沟槽一侧的出血；当出血区域为副栅的两侧时，修正曝光至少曝光两次，消除副栅电极沟槽左右两侧的出血，只留下副栅的线宽宽度。形成线宽在3μm～20μm，深度1μm～20μm之间的副栅电极图形沟槽。
请参见图31，在一个可行的实现方式中，无主栅光伏电池片，采用负胶工艺制作时，其工艺流程为：
第一步副栅外区域接近式掩膜曝光。首先制作曝光掩膜版170，掩膜图形需要遮挡副栅及副栅周边出血区域(副栅的线宽较小，而接近式曝光的线条大于50μm，采用接近式曝光的方式不能直接得到，因此需要留出血区域，后面再修正，出血区域可以在副栅的一侧或两侧)。为了提高副栅修正曝光效率，遮挡副栅区域线宽尽可能设置较小，一般设置在50μm～300μm范围。
第二步在光束聚焦单元扫描曝光工位实现光伏电池片副栅精细电极沟槽曝光。通过聚焦微柱透镜阵列曝光与平台移动，对副栅周边未曝光区域进行修正曝光，当边缘区域为副栅的一侧时，修正曝光至少一次，消除副栅电极沟槽一侧的边缘区域；当边缘区域为副栅的两侧时，修正曝光至少曝光两次，消除副栅电极沟槽左右两侧的边缘区域，只留下副栅宽度。显影之后形成线宽在3μm～20μm，深度3μm～15μm之间副栅电极沟槽145。
在一个可行的实现方式中，准直线光束400沿光束聚焦单元130中微柱透镜阵列中柱透镜长度的Y方向进行扫描，分别如图32和图33所示。图32和图33中，待光刻电池片包括电池片基底141、位于电池片基底上的种子层142以及位于种子层142上的绝缘层143。具体的，根据系统设计的聚焦微柱透镜阵列覆盖面积，系统可在待光刻电池片上首先扫描一组电极沟槽，然后拼接实现另一组光伏电池片电极沟槽的曝光扫描。也可一次性扫描完成全部光伏电池片电极沟槽的曝光扫描。
在一个可行的实现方式中，请参见图34，为了确保光束聚焦单元130中聚焦微柱透镜曝光沟槽线宽的一致性，也可对待光刻电池片140的扫描区域采用重叠拼接曝光模式。本实施方式中可对扫描区域进行1/2搭接曝光，如此对待光刻电池片140进行了2倍曝光搭接；当然也可采用更多次搭接曝光模式。
制作上述光伏电池片电极时，将上述待光刻电池片置于在输送工件的平台上，工件平台 上设有真空吸附装置，用于固定光伏电池片，输送工件平台可沿X轴上快速移动，对需要加工的光伏电池片进行精确定位送片。
进一步地，上述输送工件平台上方设置有光伏电池片定位识别相机和u/v/w对位平台，对光伏电池片放置进行位置识别及位置校正。
在一个可行的实现方式中，请参见图35，为了提高待光刻电池片140的输送效率，可以设置双工件平台交互运输方式。一个工件平台310上在光刻工作，另一个工件平台320进行待光刻电池片140上片、传输和等待动作。光刻工作完成后，等待工件平台310进入光刻工位，另一个工件平台320把完成光刻的光伏电池片输出，同时进行光伏电池片上片、传输、等待动作。如此双工件平台交替运行，以节省整个作业流水时间，提高效率。
在一个可行的实现方式中，请参见图36，为了提高待光刻电池片140的输送效率，可设置旋转工件平台交替工作方式。旋转工件平台设置三个工位以上，第一个工件平台410实现太阳能电池片上片动作，第二个工件平台420实现光伏电池片沟槽光刻动作，第三个工件平台430实现光伏电池片输出动作。三个工件平台交替循环运行，以节省整个作业流水时间，提高效率。
采用上述的光伏电池片电极的制作方法，不需要多组空间光调制器、投影光学系统和照明光学系统，因此装置研制成本成倍下降；不需要数据处理和多路光路重叠对准，因而提升了制作可靠性和效率；可实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
一实施方式的光伏电池片电极，采用上述任一的光伏电池片电极的制作方法制作得到。
采用上述的光伏电池片电极的制作方法，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而获得较为优质的光伏电池片电极。
一实施方式的光伏电池片，包括上述的光伏电池片电极。
本发明技术方案的光伏电池片包括上述光伏电池片电极，由于光束聚焦单元的作用，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而实现精细的电极图形沟槽，使得本发明的光伏电池片有利于广泛应用。
一实施方式的光伏电池，包括上述的光伏电池片。
本发明技术方案的光伏电池包括上述光伏电池片，上述光伏电池片包括上述光伏电池片电极，由于光束聚焦单元的作用，能够实现较高深宽比例如3μm～20μm线宽、1μm～20μm深、深宽比为0.3～2的电极图形沟槽的光刻，从而实现精细的电极图形沟槽，使得本发明的光伏电池有利于广泛应用。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (23)

  1. 一种光伏电池片电极的制作装置，其特征在于，包括激光源、准直光束产生单元和光束聚焦单元；
    所述准直光束产生单元位于所述激光源的出光侧，用于将所述激光源射出的激光束转换成准直光束并投射至所述光束聚焦单元；
    所述光束聚焦单元位于所述准直光束产生单元的出光侧，用于将准直光束聚焦至待光刻电池片上。
  2. 根据权利要求1所述的光伏电池片电极的制作装置，其特征在于，所述光束聚焦单元具有微柱透镜阵列或者微透镜阵列，所述微柱透镜阵列或者所述微透镜阵列的透镜面朝向或者背向所述待光刻电池片。
  3. 根据权利要求2所述的光伏电池片电极的制作装置，其特征在于，所述微柱透镜阵列与所述待光刻电池片的副栅的位置一一对应，所述微柱透镜阵列与所述待光刻电池片的副栅的周期相同。
  4. 根据权利要求2所述的光伏电池片电极的制作装置，其特征在于，所述微柱透镜阵列的周期为0.1mm～3mm，所述微柱透镜阵列的数值孔径为0.005～0.15。
  5. 根据权利要求2所述的光伏电池片电极的制作装置，其特征在于，所述微柱透镜阵列包括若干沿行方向或者列方向周期排列的柱透镜，相邻两个所述柱透镜之间的间距为0～0.2mm。
  6. 根据权利要求1所述的光伏电池片电极的制作装置，其特征在于，所述光束聚焦单元为衍射光学元件，所述衍射光学元件的衍射面朝向所述准直光束产生单元。
  7. 根据权利要求1所述的光伏电池片电极的制作装置，其特征在于，所述光束聚焦单元包括沿出光光路依次设置的第一微柱透镜阵列器件和第二微柱透镜阵列器件，所述第一微柱透镜阵列器件与所述第二微柱透镜阵列器件共焦放置，所述第一微柱透镜阵列器件的透镜面与所述第二微柱透镜阵列器件的透镜面相对，且所述第一微柱透镜阵列器件的焦距大于所述第二微柱透镜阵列器件的焦距。
  8. 根据权利要求7所述的光伏电池片电极的制作装置，其特征在于，所述光束聚焦单元还包括用以遮挡杂散光或者待光刻电池片的主栅区域的第一遮光掩膜，所述第一遮光掩膜位于所述第一微柱透镜阵列器件与所述第二微柱透镜阵列器件的共焦焦面位置，所述第一遮光掩膜设有若干个开孔，所述若干个开孔与所述第一微柱透镜阵列器件和所述第二微柱透镜阵列器件的若干个共焦焦点的位置一一对应。
  9. 根据权利要求1所述的光伏电池片电极的制作装置，其特征在于，所述准直光束为准直线光束或者准直面光束。
  10. 根据权利要求9所述的光伏电池片电极的制作装置，其特征在于，所述准直光束产生单元包括沿出光光路依次设置的光束传输组件和至少一组光束扩散组件，所述光束扩散组件包括沿出光光路依次设置的扩散透镜和准直镜；
    所述扩散透镜位于所述光束传输组件的出光侧，用以将所述光束传输组件形成的激光束扩散至所述准直镜上；所述准直镜位于所述扩散透镜的出光侧，用以将通过所述扩散透镜的激光束形成平行线光束投射至所述光束聚焦单元上。
  11. 根据权利要求10所述的光伏电池片电极的制作装置，其特征在于，所述光束传输组件包括：
    振镜，位于所述激光源的出光侧，用于改变所述激光源射出的激光束的方向；以及
    场镜，位于所述振镜的出光侧，用于将所述振镜形成的激光束聚焦到所述扩散透镜上。
  12. 根据权利要求10所述的光伏电池片电极的制作装置，其特征在于，所述光束传输组件包括转镜，所述转镜用以改变所述激光源射出的激光束的方向并将所述激光束投射至所述扩散透镜上。
  13. 根据权利要求10所述的光伏电池片电极的制作装置，其特征在于，所述光束传输组件包括至少一个反射镜，所述反射镜用以改变所述激光源射出的激光束的方向并将所述激光束投射至所述扩散透镜上。
  14. 根据权利要求10所述的光伏电池片电极的制作装置，其特征在于，所述准直光束产生单元还包括光束整形组件，所述光束整形组件位于所述激光源与所述光束传输组件之间。
  15. 根据权利要求1～14中任一项所述的光伏电池片电极的制作装置，其特征在于，所述光伏电池片电极的制作装置还包括用以遮挡杂散光的第二遮光掩膜，所述第二遮光掩膜位于所述准直光束产生单元与所述光束聚焦单元之间，或者位于所述光束聚焦单元与所述待光刻电池片之间。
  16. 一种光伏电池片电极的制作方法，其特征在于，包括如下步骤：
    提供权利要求1～15中任一项所述的制作装置和待光刻电池片，所述待光刻电池片包括电池片基底、位于所述电池片基底上的种子层以及位于所述种子层上的绝缘层；
    将所述待光刻电池片置于所述光束聚焦单元远离所述准直光束产生单元的一侧，采用所述制作装置对所述绝缘层进行光刻，以在所述绝缘层上形成电极图形沟槽，且暴露出所述种子层，得到图形化的绝缘层；以及
    通过电镀工艺在所述电极图形沟槽内沉积电极材料，之后去除所述图形化的绝缘层以及位于所述图形化的绝缘层投影内的种子层，得到光伏电池片电极。
  17. 根据权利要求16所述的光伏电池片电极的制作方法，其特征在于，所述绝缘层为正 性光刻胶，所述光束聚焦单元的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，所述若干个聚焦点位于所述绝缘层远离所述电池片基底的一侧，且所述若干个聚焦点与所述绝缘层远离所述电池片基底的表面之间的距离均为0.01mm～1mm。
  18. 根据权利要求16所述的光伏电池片电极的制作方法，其特征在于，所述绝缘层为负性光刻胶，所述光束聚焦单元的微柱透镜阵列或者微透镜阵列聚焦形成若干个聚焦点，所述若干个聚焦点位于所述绝缘层靠近所述电池片基底的一侧，且所述若干个聚焦点与所述绝缘层靠近所述电池片基底的表面之间的距离均为0.01mm～1mm。
  19. 根据权利要求16所述的光伏电池片电极的制作方法，其特征在于，所述绝缘层的厚度为1μm～20μm。
  20. 根据权利要求16所述的光伏电池片电极的制作方法，其特征在于，所述电极材料为铜。
  21. 一种光伏电池片电极，其特征在于，采用权利要求16～20中任一项所述的光伏电池片电极的制作方法制作得到。
  22. 一种光伏电池片，其特征在于，包括权利要求21所述的光伏电池片电极。
  23. 一种光伏电池，其特征在于，包括权利要求22所述的光伏电池片。
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CN219443824U (zh) * 2023-02-02 2023-08-01 苏州苏大维格科技集团股份有限公司 光伏电池片电极的制作装置
CN219513118U (zh) * 2023-04-06 2023-08-11 苏州苏大维格科技集团股份有限公司 一种电极制作设备

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