WO2023243418A1 - Dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur Download PDF

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Publication number
WO2023243418A1
WO2023243418A1 PCT/JP2023/020496 JP2023020496W WO2023243418A1 WO 2023243418 A1 WO2023243418 A1 WO 2023243418A1 JP 2023020496 W JP2023020496 W JP 2023020496W WO 2023243418 A1 WO2023243418 A1 WO 2023243418A1
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Prior art keywords
section
power
semiconductor device
switching element
electrode
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Application number
PCT/JP2023/020496
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English (en)
Japanese (ja)
Inventor
昌明 松尾
美久 塚本
幸太郎 柴田
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ローム株式会社
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Publication of WO2023243418A1 publication Critical patent/WO2023243418A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 discloses a semiconductor device including a plurality of semiconductor elements (IGBT).
  • IGBT Insulated Gate Bipolar Transistors
  • IGBT Insulated Gate Bipolar Transistors
  • a semiconductor device including a plurality of semiconductor elements (IGBT) In the semiconductor device, a half-bridge circuit is configured by a plurality of semiconductor elements.
  • Such semiconductor devices are mounted, for example, on circuit boards of electronic devices and used in power supply circuits (for example, DC/DC converters, inverters, etc.), motor drive circuits, and the like.
  • An object of the present disclosure is to provide a semiconductor device that is improved over conventional ones.
  • an object of the present disclosure is to provide a semiconductor device that can achieve low inductance.
  • a semiconductor device each has a first electrode, a second electrode, and a third electrode, and a switching operation is controlled according to a first drive signal input to the third electrode.
  • at least one first switching element each having a fourth electrode, a fifth electrode, and a sixth electrode, the switching operation of which is controlled in accordance with a second drive signal input to the sixth electrode.
  • an insulating substrate having a main surface and a back surface facing opposite to each other in the thickness direction, a wiring board having main surface wiring formed on the main surface, and back surface wiring formed on the back surface; , a first mounting part on which the at least one first switching element is mounted, a second mounting part on which the at least one second switching element is mounted, a first snubber element joined to the main surface wiring; a second snubber element joined to the back wiring.
  • Each of the first mounting section and the second mounting section is located closer to the back surface than the wiring board in the thickness direction.
  • the main surface wiring includes a first power wiring part that is electrically connected to the fifth electrode of each of the at least one second switching element, and a first power wiring part that is electrically connected to the fifth electrode of each of the at least one first switching element and the second electrode of each of the at least one first switching element and the at least one second switching element. a second power wiring section that is electrically connected to both of the fourth electrodes of each of the second switching elements.
  • the backside wiring includes a third power wiring part that is electrically connected to the first electrode of each of the at least one first switching element, and a third power wiring part that is electrically connected to the second electrode of each of the at least one first switching element and the at least one first switching element.
  • a fourth power wiring section is included that is electrically connected to both of the fourth electrodes of each of the second switching elements.
  • the first snubber element is electrically connected between the first power wiring section and the second power wiring section.
  • the second snubber element is electrically connected between the third power wiring section and the fourth power wiring section.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment.
  • FIG. 2 is a perspective view of FIG. 1 with the resin member omitted.
  • FIG. 3 is a plan view showing the semiconductor device according to the first embodiment.
  • FIG. 4 is a diagram showing the resin member with imaginary lines in the plan view of FIG. 3.
  • FIG. 5 is an enlarged plan view of a part of FIG. 4 (near the first switching element).
  • FIG. 6 is an enlarged plan view of a part of FIG. 4 (near the second switching element).
  • FIG. 7 is a plan view of essential parts of the plan view of FIG. 4 with some parts omitted.
  • FIG. 8 is a plan view of essential parts of the plan view of FIG. 7 with some parts omitted.
  • FIG. 8 is a plan view of essential parts of the plan view of FIG. 7 with some parts omitted.
  • FIG. 9 is a plan view of essential parts of the plan view of FIG. 8 with some parts omitted.
  • FIG. 10 is a bottom view showing the semiconductor device according to the first embodiment.
  • FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 4.
  • FIG. 12 is a sectional view taken along line XII-XII in FIG. 4.
  • FIG. 13 is a sectional view taken along line XIII-XIII in FIG. 4.
  • FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG.
  • FIG. 15 is an enlarged cross-sectional view of a main part of FIG. 14 (near the first semiconductor element).
  • FIG. 16 is an enlarged cross-sectional view of a main part of FIG.
  • FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 4.
  • FIG. 18 is a diagram showing an example of the circuit configuration of the semiconductor device according to the first embodiment.
  • FIG. 19 is a plan view showing a semiconductor device according to a modification of the first embodiment, in which a resin member is shown with imaginary lines.
  • FIG. 20 is a plan view of a main part of the plan view of FIG. 19 with some parts omitted.
  • FIG. 21 is a diagram illustrating an example of a circuit configuration of a semiconductor device according to a modification of the first embodiment.
  • FIG. 22 is a plan view showing the semiconductor device according to the second embodiment, in which the resin member is shown with imaginary lines.
  • the semiconductor device A1 includes a plurality of first switching elements 1, a plurality of second switching elements 2, a first snubber element 31A, a second snubber element 31B, a plurality of first circuit components 32A, a plurality of second circuit components 32B, and a support. It includes a member 4, a wiring board 5, a first signal terminal 61, a second signal terminal 62, a third signal terminal 63, a fourth signal terminal 64, a signal terminal 65, a plurality of connection members 7, and a resin member 8. .
  • the plurality of connection members 7 include a plurality of connection members 71, 72, 731, 732, 741, 742. In FIG. 4, the resin member 8 is shown by an imaginary line (two-dot chain line).
  • the thickness direction z corresponds to the thickness direction of the semiconductor device A1 (wiring board 5, etc.).
  • plane view refers to when viewed in the thickness direction z.
  • One side in the first direction y will be referred to as the y1 side in the first direction y
  • the other side in the first direction y will be referred to as the y2 side in the first direction y.
  • one side of the second direction x is referred to as the x1 side of the second direction x
  • the other side of the second direction x is referred to as the x2 side of the second direction x.
  • one side in the thickness direction z is referred to as the z1 side in the thickness direction z
  • the other side in the thickness direction z is referred to as the z2 side in the thickness direction z
  • the z1 side in the thickness direction z may be referred to as the upper side
  • the z2 side in the thickness direction z may be referred to as the lower side.
  • Each of the plurality of first switching elements 1 and the plurality of second switching elements 2 is, for example, a MOSFET.
  • Each of the plurality of first switching elements 1 and second switching elements 2 may be a field effect transistor including a MISFET (Metal-Insulator-Semiconductor FET) or another switching element such as a bipolar transistor including an IGBT instead of a MOSFET. good.
  • Each of the plurality of first switching elements 1 and the plurality of second switching elements 2 is configured using SiC (silicon carbide).
  • the semiconductor material is not limited to SiC, and may be Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), Ga 2 O 3 (gallium oxide), or the like.
  • Each of the plurality of first switching elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13, as shown in FIGS. 5 and 15.
  • each first switching element 1 is a MOSFET
  • the first electrode 11 is a drain
  • the second electrode 12 is a source
  • the third electrode 13 is a gate.
  • the second electrode 12 includes a first power pad 121 and two first sensing pads 122 .
  • the first power pad 121 is used for conducting main current, which will be described in detail later.
  • Each first detection pad 122 is used to detect a first detection signal according to the conduction state (operation state) of the second electrode 12.
  • the first detection signal is, for example, a voltage signal corresponding to the source current flowing through the second electrode 12.
  • Each first detection pad 122 is source sense.
  • each first switching element 1 the first electrode 11 is arranged on the back surface 10b of the element, and the second electrode 12 (first power pad 121 and two first detection pads 122) And the third electrode 13 is arranged on the element main surface 10a.
  • the first power pad 121, the two first detection pads 122, and the third electrode 13 are spaced apart from each other on the element main surface 10a.
  • the two first detection pads 122 are arranged with the third electrode 13 in between in the second direction x.
  • the second electrode 12 of each first switching element 1 is not configured to include a first power pad 121 and two first detection pads 122, but is configured with one pad. Good too.
  • each first switching element 1 when a first drive signal (for example, gate voltage) is input to the third electrode 13 (gate), the conduction state and the cutoff state are switched according to this first drive signal.
  • a first drive signal for example, gate voltage
  • This operation of switching between the conduction state and the cutoff state is called a switching operation.
  • a conductive state a current flows from the first electrode 11 (drain) to the second electrode 12 (source), and in a cutoff state, this current does not flow. That is, each first switching element 1 is turned on between the first electrode 11 (drain) and the second electrode 12 (source) by the first drive signal (for example, gate voltage) input to the third electrode 13 (gate). / Off controlled.
  • the switching frequency of each first switching element 1 depends on the frequency of the first drive signal. As shown in FIG.
  • the plurality of first switching elements 1 are arranged in the second direction x, as shown in FIGS. 2, 4, and 7 to 9. As shown in FIG. 15, each first switching element 1 is bonded to a support member 4 (a first mounting portion 41 to be described later) via a conductive bonding material 19.
  • the conductive bonding material 19 is, for example, solder, metal paste material, sintered metal, or the like.
  • Each second detection pad 222 is source sense. As shown in FIGS. 6 and 16, in each second switching element 2, the fourth electrode 21 is arranged on the back surface 20b of the element, and the fifth electrode 22 (the second power pad 221 and the two second detection pads 222) And the sixth electrode 23 is arranged on the element main surface 20a. As shown in FIG. 6, on the element main surface 20a, the second power pad 221, the two second detection pads 222, and the sixth electrode 23 are spaced apart from each other. The two second detection pads 222 are arranged with the sixth electrode 23 in between in the second direction x. Unlike the example shown in FIG. 6, the fifth electrode 22 of each second switching element 2 does not have a configuration including a second power pad 221 and two second detection pads 222, but may include one pad. good.
  • the plurality of second switching elements 2 are arranged in the second direction x, as shown in FIGS. 2, 4, and 7 to 9. As shown in FIG. 16, each second switching element 2 is bonded to a support member 4 (a second mounting portion 42 to be described later) via a conductive bonding material 29.
  • the conductive bonding material 29 is, for example, solder, metal paste material, or sintered metal.
  • the semiconductor device A1 is configured, for example, as a half-bridge switching circuit.
  • the plurality of first switching elements 1 are connected in parallel to each other as described above, and constitute an upper arm circuit of the semiconductor device A1.
  • the plurality of second switching elements 2 are connected in parallel to each other as described above, and constitute a lower arm circuit of the semiconductor device A1.
  • Each first switching element 1 and each second switching element 2 are connected to each other by electrically connecting a second electrode 12 (source) and a fourth electrode 21 (drain).
  • the second switching element 2 is connected in series.
  • Each first switching element 1 and each second switching element 2 constitute a bridge through this series connection.
  • the semiconductor device A1 includes four first switching elements 1 and four second switching elements 2 (see FIG. 4).
  • the numbers of the first switching elements 1 and the second switching elements 2 are not limited to this configuration, and may be changed as appropriate depending on the performance required of the semiconductor device A1.
  • a plurality of first switching elements 1 are mounted on the first mounting portion 41, as shown in FIGS. 9, 14, and 15.
  • the first mounting section 41 supports the plurality of first switching elements 1 .
  • the first mounting portion 41 is electrically connected to the first electrode 11 (drain) of each first switching element 1 .
  • the first electrodes 11 of the plurality of first switching elements 1 are electrically connected to each other via the first mounting portion 41 .
  • the first mounting portion 41 has a rectangular parallelepiped shape, for example.
  • the dimension of the first mounting portion 41 along the thickness direction z is larger than the dimension of the insulating substrate 50A along the thickness direction z.
  • a plurality of second switching elements 2 are mounted on the second mounting portion 42, as shown in FIGS. 9, 14, and 16.
  • the second mounting portion 42 supports the plurality of second switching elements 2 .
  • the second mounting portion 42 is electrically connected to the fourth electrode 21 (drain) of each second switching element 2 .
  • the respective fourth electrodes 21 of the plurality of second switching elements 2 are electrically connected to each other via the second mounting portion 42 .
  • the second mounting portion 42 has a rectangular parallelepiped shape, for example.
  • the dimension of the second mounting portion 42 along the thickness direction z is larger than the dimension of the insulating substrate 50A along the thickness direction z.
  • the second mounting portion 42 has a mounting surface 42a, as shown in FIGS. 9, 14, and 16.
  • the mounting surface 42a faces upward in the thickness direction z (z1 side in the thickness direction z).
  • Each of the second switching elements 2 is bonded to the mounting surface 42a, and the fourth power wiring portion 514 is bonded to the mounting surface 42a.
  • the second mounting portion 42 is bonded to the second insulating plate 44 via a bonding material 429, as shown in FIGS. 14 and 16.
  • the bonding material 429 may be conductive or insulating.
  • the first insulating plate 43 and the second insulating plate 44 are each made of an insulating material, and the insulating material is, for example, Al 2 O 3 (aluminum oxide).
  • Each of the first insulating plate 43 and the second insulating plate 44 has, for example, a rectangular shape in plan view, as shown in FIG.
  • the first insulating plate 43 supports the first mounting portion 41.
  • the second insulating plate 44 supports the second mounting portion 42.
  • a plating layer may be formed on the surface of the first insulating plate 43 to which the first mounting portion 41 is bonded (the surface facing the z1 side in the thickness direction z).
  • the wiring board 5 is arranged above the first mounting section 41 and the second mounting section 42 in the thickness direction z (on the z1 side in the thickness direction z). That is, the first mounting portion 41 and the second mounting portion 42 are located below the wiring board 5 in the thickness direction z (on the z2 side in the thickness direction z).
  • a main current conduction path in the semiconductor device A1 is wired on the wiring board 5, and each control signal (the above-mentioned first drive signal, second drive signal) for the plurality of first switching elements 1 and the plurality of second switching elements 2
  • a conductive path for a signal, a first detection signal, a second detection signal, etc.) is wired.
  • the wiring board 5 is, for example, a printed circuit board.
  • the wiring board 5 straddles the first mounting section 41 and the second mounting section 42 and is joined to these.
  • the wiring board 5 includes an insulating substrate 50A, main surface wiring 50B, back surface wiring 50C, and a plurality of metal members 58 and 59.
  • the insulating substrate 50A has a main surface 501 and a back surface 502, as shown in FIGS. 11 to 17.
  • the main surface 501 and the back surface 502 are spaced apart in the thickness direction z.
  • the main surface 501 faces upward in the thickness direction z (z1 side in the thickness direction z), and the back surface 502 faces downward in the thickness direction z (z2 side in the thickness direction z).
  • each of the plurality of through holes 503 penetrates the insulating substrate 50A from the main surface 501 to the back surface 502 in the thickness direction z.
  • each metal member 59 is inserted into each through hole 503.
  • the inner surface of each through hole 503 is not in contact with each metal member 59, as shown in FIGS. 8 and 13. Unlike this configuration, the inner surface of each through hole 503 may be in contact with each metal member 59.
  • each of the plurality of openings 505 penetrates the insulating substrate 50A from the main surface 501 to the back surface 502 in the thickness direction z. As shown in FIG. 8, each of the plurality of openings 505 surrounds a corresponding one of the plurality of first switching elements 1 in plan view.
  • each of the plurality of openings 506 penetrates the insulating substrate 50A from the main surface 501 to the back surface 502 in the thickness direction z. As shown in FIG. 8, each of the plurality of openings 506 surrounds a corresponding one of the plurality of second switching elements 2 in plan view.
  • Each thickness (dimension in the thickness direction z) and each component material of the main surface wiring 50B and the back surface wiring 50C are based on the specifications of the semiconductor device A1 (rated current, allowable current, rated voltage, withstand voltage, internal inductance of the entire device, and size, etc.).
  • the main surface wiring 50B includes a first power wiring section 511, a second power wiring section 512, a first signal wiring section 52, a second signal wiring section 53, a third signal wiring section 54, a fourth signal wiring section 55, and a signal wiring section.
  • the back wiring 50C includes a third power wiring part 513 and a fourth power wiring part 514.
  • the first power wiring section 511, the second power wiring section 512, the third power wiring section 513, and the fourth power wiring section 514 form a main current conduction path in the semiconductor device A1.
  • the first power wiring section 511 and the second power wiring section 512 are spaced apart from each other in the first direction y
  • the third power wiring section 513 and the fourth power wiring section 514 are spaced apart from each other in the first direction y.
  • the first power wiring section 511 and the third power wiring section 513 overlap each other
  • the second power wiring section 512 and the fourth power wiring section 514 overlap each other in a plan view.
  • the first power wiring section 511 is formed on the main surface 501 of the insulating substrate 50A. As understood from FIGS. 4 and 6, the first power wiring section 511 is electrically connected to the fifth electrode 22 (source) of each second switching element 2 via the plurality of connection members 72. The first power wiring section 511 is formed so as to avoid each of the plurality of first switching elements 1 in plan view.
  • the second power wiring section 512 is formed on the main surface 501 of the insulating substrate 50A. As shown in FIG. 4, the second power wiring section 512 is located closer to the y2 side in the first direction y than the first power wiring section 511 in plan view. As understood from FIGS. 4 and 5, the second power wiring section 512 is electrically connected to the second electrode 12 (source) of each first switching element 1 via the plurality of connection members 71. Moreover, the second power wiring section 512 connects the fourth electrode 21 of each second switching element 2 ( conducts to the drain). The second power wiring section 512 is formed so as to avoid each of the plurality of second switching elements 2 in plan view.
  • the second power wiring section 512 includes a plurality of through holes 512b, as shown in FIGS. 7 and 13. As shown in FIG. 13, each of the plurality of through holes 512b penetrates the second power wiring section 512 in the thickness direction z. As shown in FIGS. 7 and 13, one metal member 59 is fitted into each through hole 512b, and the inner surface of each through hole 512b is in contact with each metal member 59. In the illustrated example, each through hole 512b is circular in plan view (see FIG. 7), but may be changed as appropriate depending on the shape of each metal member 59.
  • the third power wiring section 513 is formed on the back surface 502 of the insulating substrate 50A.
  • the third power wiring section 513 is joined to the mounting surface 41a of the first mounting section 41, as shown in FIGS. 9, 11, and 13 to 15.
  • the third power wiring section 513 is electrically connected to each first electrode 11 (drain) of the plurality of first switching elements 1 via the first mounting section 41 .
  • the third power wiring section 513 includes a plurality of openings 513a and through holes 513b, as shown in FIGS. 9, 14, and 15. As shown in FIGS. 14 and 15, each of the plurality of openings 513a penetrates the third power wiring section 513 in the thickness direction z. As understood from FIGS. 14 and 15, the plurality of openings 513a individually overlap the plurality of openings 505 of the insulating substrate 50A in plan view. As shown in FIG. 9, each opening 513a surrounds a corresponding one of the plurality of first switching elements 1 in plan view. The through hole 513b penetrates the third power wiring section 513 in the thickness direction z. As shown in FIG.
  • a metal member 58 is fitted into the through hole 513b, and the inner surface of the through hole 513b is in contact with the metal member 58.
  • “fitted” refers to a state where a certain member (for example, the metal member 58) is inserted into a certain through hole (for example, the through hole 513b), and the certain member is in contact with the inner surface of the certain through hole. It is something that exists. In other words, the "fitted" state corresponds to the "inserted” state in which it is in contact with the inner surface of the through hole.
  • the fourth power wiring section 514 is formed on the back surface 502 of the insulating substrate 50A.
  • the fourth power wiring section 514 is joined to the mounting surface 42a of the second mounting section 42, as shown in FIGS. 9, 12 to 14, and 16.
  • the fourth power wiring section 514 is electrically connected to each fourth electrode 21 (drain) of the plurality of second switching elements 2 via the second mounting section 42 . Further, as will be understood from the configuration described in detail later, the fourth power wiring section 514 connects the second electrode 12 (source) of each first switching element 1 via the second power wiring section 512 and each metal member 59. ) conducts.
  • the fourth power wiring section 514 includes a plurality of openings 514a and a plurality of through holes 514b, as shown in FIGS. 9, 13, 14, and 16. As shown in FIGS. 14 and 16, each of the plurality of openings 514a penetrates the fourth power wiring section 514 in the thickness direction z. As understood from FIGS. 14 and 16, the plurality of openings 514a individually overlap the plurality of openings 506 of the insulating substrate 50A in plan view. As shown in FIG. 9, each of the plurality of openings 514a surrounds a corresponding one of the plurality of second switching elements 2 in plan view. As shown in FIG. 13, the plurality of through holes 514b each penetrate the fourth power wiring section 514 in the thickness direction z. As understood from FIG. 13, the plurality of through holes 514b individually overlap the plurality of through holes 512b of the second power wiring section 512 in plan view. A plurality of metal members 59 are fitted into each through hole 514b, one each.
  • the semiconductor device A1 includes a first power terminal section 5N, a second power terminal section 51SW, a third power terminal section 5P, and a fourth power terminal section 52SW.
  • the first power terminal section 5N and the third power terminal section 5P are connected to, for example, an external power supply (DC power supply), and a power supply voltage (DC voltage) is applied thereto.
  • the third power terminal portion 5P is a P terminal connected to the positive electrode of the DC power source
  • the first power terminal portion 5N is an N terminal connected to the negative electrode of the DC power source.
  • the DC voltage applied to the third power terminal section 5P and the first power terminal section 5N is converted into an AC voltage by each switching operation of the plurality of first switching elements 1 and each switching operation of the plurality of second switching elements 2. be done.
  • the converted voltage (AC voltage) is output from each of the third power terminal section 5P and the fourth power terminal section 52SW.
  • the main current in the semiconductor device A1 is generated by this power supply voltage and the converted voltage.
  • the first power terminal section 5N is a part of the first power wiring section 511, as shown in FIGS. 2 to 4, FIG. 7, and FIG. 11. Therefore, the first power wiring section 511 includes the first power terminal section 5N. As shown in FIGS. 2 to 4, FIG. 7, and FIG. 11, the first power terminal section 5N is located on one side of the first power wiring section 511 in the second direction x (the x1 side of the second direction x). Located at the end. Since the first power terminal section 5N is a part of the first power wiring section 511, it is electrically connected to the fifth electrode 22 (source) of each second switching element 2.
  • the second power terminal section 51SW is a part of the second power wiring section 512, as shown in FIGS. 2 to 4, FIG. 7, and FIG. 12. Therefore, the second power wiring section 512 includes the second power terminal section 51SW. As shown in FIGS. 2 to 4, FIG. 7, and FIG. 12, the second power terminal portion 51SW is connected to one side of the second power wiring portion 512 in the second direction Located at the end. Since the second power terminal section 51SW is a part of the second power wiring section 512, the second electrode 12 (source) of each first switching element 1 and the fourth electrode 21 (drain) of each second switching element 2 ) conducts.
  • the third power terminal section 5P is a part of the third power wiring section 513, as shown in FIGS. 4, 7, and 9 to 11. Therefore, the third power wiring section 513 includes the third power terminal section 5P. As shown in FIGS. 4, 7, and 9 to 11, the third power terminal portion 5P is located on one side of the third power wiring portion 513 in the second direction x (the x1 side in the second direction x). Located at the end. Since the third power terminal section 5P is a part of the third power wiring section 513, it is electrically connected to each first electrode 11 (drain) of the plurality of first switching elements 1.
  • the fourth power terminal section 52SW is a part of the fourth power wiring section 514, as shown in FIGS. 4, 7, 9, 10, and 12. Therefore, the fourth power wiring section 514 includes a fourth power terminal section 52SW. As shown in FIGS. 4, 7, 9, 10, and 12, the fourth power terminal section 52SW is connected to one side of the fourth power wiring section 514 in the second direction x ( located at the end of the side). Since the fourth power terminal section 52SW is a part of the fourth power wiring section 514, the second electrode 12 (source) of each first switching element 1 and the fourth electrode 21 (drain) of each second switching element 2 ) conducts.
  • the first power terminal portion 5N, the second power terminal portion 51SW, the third power terminal portion 5P, and the fourth power terminal portion 52SW are spaced apart from each other, and as shown in FIGS. 1, 3, and 10 to 12, respectively. is exposed from the resin member 8.
  • Each surface of the first power terminal section 5N, second power terminal section 51SW, third power terminal section 5P, and fourth power terminal section 52SW may be plated or may not be plated. Good too.
  • the semiconductor device A1 includes both the second power terminal section 51SW and the fourth power terminal section 52SW, but unlike this configuration, the semiconductor device A1 includes both the second power terminal section 51SW and the fourth power terminal section 52SW. It may contain only one of them.
  • the first signal wiring section 52 has a first signal terminal 61 conductively connected thereto.
  • the first signal wiring section 52 is electrically connected to each third electrode 13 (gate) of the plurality of first switching elements 1.
  • the first signal wiring section 52 forms a transmission path for transmitting the first drive signal together with the plurality of connection members 731.
  • the first signal wiring section 52 includes a joint section 521, a plurality of individual sections 522, and an extension section 523.
  • the plurality of individual parts 522 are located on the opposite side (the side where the plurality of second switching elements 2 are located) with respect to the plurality of first switching elements 1 in the first direction y. y1 side of direction y). The plurality of individual parts 522 are located on the x1 side in the second direction x with respect to the joint part 521.
  • the extending portion 523 extends from the joint portion 521 to any one of the plurality of individual portions 522.
  • the extending portion 523 electrically connects the joint portion 521 and any one of the plurality of individual portions 522.
  • the extending portion 523 is connected to the individual portion 522 closest to the joint portion 521 among the plurality of individual portions 522 in the second direction x.
  • the individual part 522 connected to the extending part 523 is located closest to the x2 side in the second direction x among the plurality of individual parts 522.
  • the plurality of individual parts 532 are arranged along the second direction x and spaced apart from each other, as shown in FIGS. 4, 7, and 12. As shown in FIGS. 4 and 7, each of the plurality of individual portions 532 has a band shape extending in the second direction x in plan view. As shown in FIG. 4, FIG. 7, and FIG. 12, each of the plurality of individual parts 532 is joined to one of the plurality of connection members 732. Further, each of the plurality of individual parts 532 is joined to one of the plurality of second circuit components 32B. In any two individual parts 532 adjacent to each other in the second direction x, the two individual parts 532 are electrically connected via a corresponding one of the plurality of second circuit components 32B. As shown in FIGS.
  • the third signal terminal 63 is connected to the joint portion 541.
  • the joint portion 541 is an end portion of the insulating substrate 50A in plan view, and is located at an end portion on the x2 side in the second direction x.
  • the strip portion 542 extends in the second direction x in plan view.
  • the strip portion 542 has the second direction x as its longitudinal direction.
  • the strip portion 542 is located on the y1 side in the first direction y with respect to the plurality of first switching elements 1 in plan view. Further, the strip portion 542 is sandwiched between the plurality of first switching elements 1 and the plurality of individual portions 522 in the first direction y in a plan view.
  • the strip portion 542 is located closer to the x1 side in the second direction x than the joint portion 541 is.
  • each of the plurality of pad portions 543 is formed between two first switching elements 1 adjacent in the second direction x in plan view.
  • Each of the plurality of pad portions 543 is connected to the strip-shaped portion 542, and in this embodiment, the edge of the strip-shaped portion 542 is connected to the side where the plurality of first switching elements 1 are located in the first direction y (y2 side). ) is connected to the edge of Each of the plurality of pad portions 543 overlaps with the strip portion 542 when viewed in the first direction y.
  • each pad portion 543 may be separated from the strip portion 542.
  • the fourth signal wiring section 55 has a fourth signal terminal 64 conductively connected thereto.
  • the fourth signal wiring section 55 is electrically connected to each second electrode 12 of the plurality of second switching elements 2 .
  • the fourth signal wiring section 55 forms a transmission path for transmitting the second detection signal together with the plurality of connection members 742.
  • the fourth signal wiring section 55 includes a joint section 551, a strip section 552, a plurality of pad sections 553, and an extension section 554.
  • the joint portion 551, the strip portion 552, the plurality of pad portions 553, and the extension portion 554 are integrally formed.
  • the fourth signal terminal 64 is connected to the joint portion 551.
  • the joint portion 551 is an end portion of the insulating substrate 50A in plan view, and is located at an end portion on the x2 side in the second direction x.
  • the strip portion 552 extends in the second direction x in plan view.
  • the strip portion 552 has the second direction x as its longitudinal direction.
  • the strip portion 552 is located on the y2 side in the first direction y with respect to the plurality of second switching elements 2 in plan view. Further, the strip portion 552 is sandwiched between the plurality of second switching elements 2 and the plurality of individual portions 532 in the first direction y in a plan view.
  • the strip portion 552 is located closer to the x1 side in the second direction x than the joint portion 551 is.
  • the strip portion 552 is parallel (or substantially parallel) to the strip portion 542 in plan view.
  • the plurality of pad portions 553 are formed between two adjacent second switching elements 2 in the first direction y when viewed from above.
  • Each of the plurality of pad portions 553 is connected to the strip-shaped portion 552, and in this embodiment, the edge of the strip-shaped portion 542 is connected to the side where the plurality of second switching elements 2 are located in the first direction y (y2 side). ) is connected to the edge of The plurality of pad portions 553 overlap the strip portion 552 when viewed in the first direction y.
  • each pad portion 553 may be separated from the strip portion 552.
  • the extending portion 554 extends from the joint portion 551 to the strip portion 552, as shown in FIGS. 4 and 7.
  • the extending portion 554 electrically connects the joint portion 551 and the strip portion 552.
  • most of the extending portion 554 has a band shape extending in the first direction y.
  • the signal wiring section 56 has a signal terminal 65 conductively connected thereto.
  • the signal wiring section 56 is electrically connected to each first electrode 11 of the plurality of first switching elements 1.
  • a through hole 561 is formed in the signal wiring section 56.
  • the through hole 561 penetrates the signal wiring section 56 in the thickness direction z.
  • a metal member 58 is fitted into the through hole 561.
  • each of the plurality of metal members 59 penetrates the insulating substrate 50A in the thickness direction z, and connects the second power wiring section 512 and the fourth power wiring section 514.
  • Each metal member 59 is, for example, columnar.
  • each metal member 59 has a circular shape in plan view (see FIGS. 5 to 8). Unlike this example, the shape of each metal member 59 in plan view may be elliptical or polygonal.
  • the constituent material of each metal member 59 is, for example, copper or a copper alloy.
  • the plurality of metal members 59 are individually inserted into the plurality of through holes 512b of the second power wiring section 512 and the plurality of through holes 514b of the fourth power wiring section 514, respectively, as shown in FIGS. 6 to 8 and FIG. Fitted in. Further, the plurality of metal members 59 are individually inserted into the plurality of through holes 503 of the insulating substrate 50A. Each of the plurality of metal members 59 is in contact with one corresponding inner surface of the plurality of through holes 512b and one corresponding inner surface of the plurality of through holes 514b. The plurality of metal members 59 are each supported by being fitted into the corresponding through hole 512b and the corresponding through hole 514b.
  • solder may be poured into these gaps.
  • the gaps are filled with solder, and each metal member 59 is fixed to the second power wiring section 512 and the fourth power wiring section 514. Note that when solder is poured, the gaps between each metal member 59 and the inner surface of the through hole 503 of the insulating substrate 50A can also be filled with the solder.
  • the metal member 58 penetrates the insulating substrate 50A in the thickness direction z, and connects the third power wiring section 513 and the signal wiring section 56.
  • the metal member 58 is, for example, columnar.
  • the metal member 58 has a circular shape in plan view (see FIGS. 6 to 8). Unlike this example, the shape of the metal member 58 in plan view may be elliptical or polygonal.
  • the constituent material of the metal member 58 is, for example, copper or a copper alloy.
  • the metal member 58 is fitted into the through hole 561 of the signal wiring section 56 and the through hole 513b of the third power wiring section 513, and is also inserted into the through hole 504 of the insulating substrate 50A. ing. As shown in FIGS. 7 to 9, the metal member 58 is in contact with the inner surface of the through hole 561, the inner surface of the through hole 513b, and the inner surface of the through hole 504, respectively. At this time, if a gap is generated between the metal member 58 and the inner surface of each of the through holes 561, 513b, and 504, solder may be poured into this gap. As a result, this gap is filled with solder, and the metal member 58 is fixed to each third power wiring section 513, signal wiring section 56, and insulating substrate 50A.
  • each of the plurality of first switching elements 1 is connected to a corresponding one of the plurality of openings 505 of the insulating substrate 50A and a plurality of the third power wiring sections 513.
  • the first mounting portion 41 is accommodated in a depression formed by a corresponding one of the openings 513a and the first mounting portion 41.
  • the element main surface 10a of each first switching element 1 is connected to the insulating substrate 50A or the third although it overlaps with either of the power wiring sections 513, it may overlap with the first power wiring section 511. In either case, each first switching element 1 does not protrude above the first power wiring section 511 in the thickness direction z.
  • each of the plurality of second switching elements 2 includes a corresponding one of the plurality of openings 506 of the insulating substrate 50A and a plurality of openings of the fourth power wiring section 514. It is housed in a recess formed by a corresponding one of the sections 514a and the second mounting section 42.
  • the element main surface 20a of each second switching element 2 is connected to the insulating substrate 50A or the fourth although it overlaps with either of the power wiring sections 514, it may overlap with the second power wiring section 512. In either case, each second switching element 2 does not protrude above the second power wiring section 512 in the thickness direction z.
  • the first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 are each made of a conductive material.
  • This electrically conductive material is, for example, copper or a copper alloy.
  • the first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 are each formed by cutting out and bending a plate-like member. As shown in FIGS. 1 to 4 and FIG.
  • the first signal terminal 61 is electrically connected to the third electrode 13 (gate) of each first switching element 1.
  • a first drive signal that controls the switching operation of each first switching element 1 is input to the first signal terminal 61 .
  • the first signal terminal 61 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8.
  • a portion of the first signal terminal 61 covered with the resin member 8 is joined to a joint portion 521 of the first signal wiring portion 52 .
  • a portion of the first signal terminal 61 exposed from the resin member 8 is connected to an external control device (for example, a gate driver), and a first drive signal (gate voltage) is input from the control device.
  • an external control device for example, a gate driver
  • the second signal terminal 62 is electrically connected to the sixth electrode 23 (gate) of each second switching element 2.
  • a second drive signal that controls the switching operation of each second switching element 2 is input to the second signal terminal 62 .
  • the second signal terminal 62 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. A portion of the second signal terminal 62 covered with the resin member 8 is joined to a joint portion 531 of the second signal wiring portion 53.
  • the third signal terminal 63 is electrically connected to the second electrode 12 (source) of each first switching element 1.
  • the third signal terminal 63 outputs a first detection signal indicating the conduction state (operating state) of each first switching element 1.
  • the voltage applied to the second electrode 12 of each first switching element 1 (voltage corresponding to the source current) is output from the third signal terminal 63 as the first detection signal.
  • the third signal terminal 63 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. A portion of the third signal terminal 63 covered with the resin member 8 is joined to the joint portion 541 of the third signal wiring section 54 .
  • the portion of the third signal terminal 63 exposed from the resin member 8 is connected to the external control device and outputs the first detection signal of the control device.
  • the fourth signal terminal 64 is electrically connected to the fifth electrode 22 (source) of each second switching element 2.
  • the fourth signal terminal 64 outputs a second detection signal indicating the conduction state (operating state) of each second switching element 2.
  • the voltage applied to the fifth electrode 22 of each second switching element 2 (voltage corresponding to the source current) is output from the fourth signal terminal 64 as the second detection signal.
  • the fourth signal terminal 64 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8.
  • the portion of the fourth signal terminal 64 covered with the resin member 8 is joined to the joint portion 551 of the fourth signal wiring portion 55 .
  • the portion of the fourth signal terminal 64 exposed from the resin member 8 is connected to the external control device and outputs the second detection signal to the control device.
  • the signal terminal 65 is electrically connected to the first electrode 11 (drain) of each first switching element 1.
  • the signal terminal 65 outputs the voltage applied to the first electrode 11 of each first switching element 1 (voltage corresponding to the drain current).
  • the signal terminal 65 includes a portion covered with the resin member 8 and a portion exposed from the resin member 8. A portion of the signal terminal 65 covered with the resin member 8 is joined to the signal wiring section 56. The portion of the signal terminal 65 exposed from the resin member 8 is connected to the external control device, and the voltage applied to the first electrode 11 of each first switching element 1 (corresponding to the drain current) is connected to the external control device. output voltage).
  • the first snubber element 31A is joined to the main surface wiring 50B.
  • the first snubber element 31A is electrically connected between the first power wiring section 511 and the second power wiring section 512.
  • the first snubber element 31A includes a first capacitor 311A.
  • the first snubber element 31A is constituted by a first capacitor 311A.
  • the first capacitor 311A has a pair of terminal portions 3111. One of the pair of terminal parts 3111 is electrically connected to the first power wiring part 511. The other of the pair of terminal portions 3111 is electrically connected to the second power wiring portion 512.
  • the first power terminal section 5N (first power wiring section 511) and the second power terminal section 51SW (second power wiring section 512) are connected to each other via the first capacitor 311A (first snubber element 31A). connected.
  • the first snubber element 31A is arranged between the first power terminal section 5N and the second power terminal section 51SW and the plurality of first switching elements 1 and the plurality of second switching elements 2 in the second direction x.
  • the first snubber element 31A is larger than the first power terminal portion 5N and the second power terminal portion than the plurality of first switching elements 1 and the plurality of second switching elements 2 in the second direction x. 51SW, but conversely, it is arranged closer to the plurality of first switching elements 1 and the plurality of second switching elements 2 than the first power terminal part 5N and the second power terminal part 51SW. Good too.
  • the second snubber element 31B is joined to the back wiring 50C.
  • the second snubber element 31B is electrically connected between the third power wiring section 513 and the fourth power wiring section 514.
  • the second snubber element 31B includes a second capacitor 311B.
  • the second snubber element 31B is constituted by a second capacitor 311B.
  • the second capacitor 311B has a pair of terminal portions 3112. One of the pair of terminal portions 3112 is electrically connected to the third power wiring portion 513. The other of the pair of terminal portions 3112 is electrically connected to the fourth power wiring portion 514.
  • the semiconductor device A1 further includes a pair of conductive bonding materials 319A and a pair of conductive bonding materials 319B.
  • the pair of conductive bonding materials 319A and the pair of conductive bonding materials 319B are each made of, for example, solder, but may also be made of sintered metal or the like.
  • one of the pair of conductive bonding materials 319A bonds one of the pair of terminal portions 3111 and the first power wiring portion 511
  • the other of the pair of conductive bonding materials 319A bonds the pair of terminal portions 3111 to the first power wiring portion 511.
  • the other terminal portion 3111 and the second power wiring portion 512 are joined. As shown in FIG.
  • one of the pair of conductive bonding materials 319B joins one of the pair of terminal portions 3112 and the third power wiring portion 513, and the other of the pair of conductive bonding materials 319B connects the pair of terminal portions 3112 to the third power wiring portion 513.
  • the other terminal portion 3112 and the fourth power wiring portion 514 are joined.
  • the plurality of first circuit components 32A are connected to the first conductive member.
  • the first conductive member is electrically connected to the first signal terminal 61 and connects the third electrodes 13 of the plurality of first switching elements 1 to each other.
  • the first conductive member is a transmission path for the first drive signal.
  • the first conductive member includes, for example, a part of the first signal wiring section 52 and a plurality of connection members 731.
  • the third electrodes 13 of the plurality of first switching elements 1 are electrically connected to each other via at least one of the plurality of first circuit components 32A.
  • the plurality of first circuit components 32A increase impedance in the first frequency band.
  • the first frequency band is higher than the switching frequency of each first switching element 1.
  • the switching frequency of each first switching element 1 and the switching frequency of each second switching element 2 are the same, and the plurality of first circuit components 32A and the plurality of second circuit components 32B are of the same type. using things. Therefore, the first frequency band and the second frequency band are the same. Note that even if the switching frequency of each first switching element 1 and the switching frequency of each second switching element 2 are the same, the first frequency band and the second frequency band may be made different. Further, when the switching frequency of each first switching element 1 and the switching frequency of each second switching element 2 are different, the first frequency band and the second frequency band may be the same or different.
  • Each of the plurality of connection members 7 connects two parts separated from each other.
  • the plurality of connection members 7 include a plurality of connection members 71, 72, 731, 732, 741, 742.
  • Each of the plurality of connection members 7 is, for example, a bonding wire.
  • Some of the plurality of connection members 7 (for example, the plurality of connection members 71 and 72) may be metal plates instead of bonding wires.
  • the constituent material of each of the plurality of connecting members 7 may be gold, aluminum, or copper.
  • Each of the plurality of connection members 732 is connected to each sixth electrode 23 (gate) of the plurality of second switching elements 2 and each individual part 532 of the second signal wiring part 53, as shown in FIGS. 4 and 6. and make them conductive.
  • the plurality of connection members 732 transmit the second drive signal together with the second signal wiring section 53.
  • Each connecting member 732 is a part of the second conductive member. In two second switching elements 2 of the plurality of second switching elements 2, a connecting member 732 connected to one second switching element 2 and a connecting member 732 connected to the other second switching element 2. , and the portions of the second signal wiring section 53 to which these connecting members 732 are connected constitute the second conductive member.
  • wire diameters of the plurality of connecting members 71, 72, 731, 732, 741, and 742 are not particularly limited, in the semiconductor device A1, these wire diameters have the following relationship.
  • Each wire diameter of the plurality of connecting members 71, 72 is larger than each wire diameter of the plurality of connecting members 731, 732, 741, 742. This is because the main current flows through the plurality of connection members 71 and 72.
  • each wire diameter of the plurality of connection members 741, 742 is larger than each wire diameter of the plurality of connection members 731, 732.
  • each of the plurality of resin side surfaces 831 to 834 is sandwiched between the resin main surface 81 and the resin back surface 82 in the thickness direction z, and is sandwiched between the resin main surface 81 and the resin back surface 82.
  • Each is connected.
  • the resin side surface 831 and the resin side surface 832 are spaced apart in the second direction x.
  • the resin side surface 831 faces the x2 side in the second direction x
  • the resin side surface 832 faces the x1 side in the second direction x.
  • the first signal terminal 61, the second signal terminal 62, the third signal terminal 63, the fourth signal terminal 64, and the signal terminal 65 protrude from the resin side surface 831, as shown in FIGS.
  • the resin member 8 includes a plurality of notches 84, as shown in FIGS. 1, 3, 4, and 10 to 12. Each of the plurality of cutouts 84 is recessed from the resin side surface 832 and from either the resin main surface 81 or the resin back surface 82 . As shown in FIGS. 1, 3, 4, and 10 to 12, the first power terminal section 5N, the second power terminal section 51SW, the third power terminal section 5P, and the fourth power terminal section 52SW have a plurality of It is exposed from the resin member 8 through one of the notches 84 .
  • the second power wiring section 512 and the fourth power wiring section 514 are electrically connected to the second electrode 12 of each of the at least one first switching element 1 and the fourth electrode 21 of each of the at least one second switching element 2, respectively. do.
  • the second snubber element 31B is connected in parallel to at least one first switching element 1
  • the first snubber element 31A is connected in parallel to at least one second switching element 2. be done.
  • the semiconductor device A1 can achieve low inductance. Therefore, the surge voltage caused by the switching operation of at least one first switching element 1 and the surge voltage caused by the switching operation of at least one second switching element 2 are suppressed, so that the semiconductor device A1 can increase the current. becomes possible.
  • the semiconductor device A1 the first snubber element 31A and the second snubber element 31B are covered with the resin member 8. According to this configuration, since the semiconductor device A1 includes the first snubber element 31A and the second snubber element 31B, there is no need to separately connect a snubber circuit to the outside of the semiconductor device A1. Therefore, the degree of freedom in connecting the external terminals (first power terminal section 5N, second power terminal section 51SW, third power terminal section 5P, and fourth power terminal section 52SW) of the semiconductor device A1 is improved.
  • the semiconductor device A1 includes a wiring board 5.
  • the wiring board 5 includes a main current wiring section (a first power wiring section 511, a second power wiring section 512, a third power wiring section 513, and a fourth power wiring section 514) for the main current in the semiconductor device A1 and a control section for the semiconductor device A1.
  • Wiring parts first signal wiring part 52, second signal wiring part 53, third signal wiring part 54, fourth signal wiring part 52, etc.
  • signals first drive signal, second drive signal, first detection signal, second detection signal, etc.
  • a signal wiring section 55 and a signal wiring section 56) are included.
  • the degree of freedom of wiring on the wiring board 5 is improved compared to the case where a plurality of first switching elements 1 and a plurality of second switching elements 2 are bonded to the wiring board 5. That is, by including the wiring board 5, the semiconductor device A1 can easily incorporate the first snubber element 31A and the second snubber element 31B. Further, since the semiconductor device A1 includes the wiring board 5, the first snubber element 31A and the second snubber element 31B can be arranged so as to overlap each other when viewed in the thickness direction z. Thereby, it is possible to suppress an increase in the size of the resin member 8 in plan view.
  • the plurality of first circuit components 32A are connected to the first conductive member, and at least one of the plurality of first circuit components 32A is connected between the third electrodes 13 of the plurality of first switching elements 1. are electrically connected to each other via. This allows the impedance in the first frequency band to be increased in the loop path described above.
  • each first circuit component 32A is an inductance element. Unlike this configuration, even if each first circuit component 32A is a resistor instead of an inductance element, the impedance in the first frequency band can be increased. That is, the semiconductor device A1 may use a resistor as each first circuit component 32A to suppress the resonance phenomenon that occurs when the plurality of first switching elements 1 are operated in parallel. However, when a resistor is used as each first circuit component 32A, the impedance at frequencies other than the first frequency band also increases, resulting in a decrease in the switching speed of each first switching element 1 and a decrease in the switching speed of each first switching element 1. There is a concern that switching losses will increase.
  • each first circuit component 32A is an inductance element
  • the semiconductor device A1 suppresses an increase in impedance at the switching frequency of each first switching element 1, and, for example, reduces the switching speed of each first switching element 1 and increases the switching loss of each first switching element 1.
  • each second circuit component 32B since each second circuit component 32B is an inductance element, increase in impedance at frequencies other than the second frequency band can be suppressed more than when each second circuit component 32B is a resistor. .
  • the semiconductor device A1 suppresses an increase in impedance at the switching frequency of each first switching element 1, and, for example, decreases the switching speed of each second switching element 2 and increases switching loss of each second switching element 2. can be suppressed.
  • the reactance component does not involve energy loss, but the resistance component involves energy loss. Therefore, ferrite beads have higher performance in absorbing high-frequency vibrations and are more effective in removing high-frequency vibrations than general inductance elements. Furthermore, by changing the type of ferrite beads used in each first circuit component 32A, depending on variations in performance of each first switching element 1 and unevenness of current (drain current) of each first switching element 1, The frequency characteristics, Q value, etc. of each first circuit component 32A can be easily adjusted. Therefore, in the semiconductor device A1, using ferrite beads as the first circuit component 32A is more preferable than using other inductance elements in terms of suppressing the resonance phenomenon. This also applies to each second circuit component 32B. That is, in the semiconductor device A1, it is preferable that each second circuit component 32B is a ferrite bead in order to suppress the resonance phenomenon, compared to a case in which each second circuit component 32B is a ferrite bead.
  • the third power terminal portion 5P is arranged on one side (x1 side of the second direction x) in the arrangement direction (second direction x) of the plurality of first switching elements 1.
  • the resonance phenomenon that occurs when a plurality of first switching elements 1 are operated in parallel can be avoided by equalizing the conduction path from the third power terminal portion 5P to the first electrode 11 (drain) of each first switching element 1. suppressed.
  • the impedance between each third electrode 13 (gate) is increased by the first circuit component 32A as described above. This is effective in suppressing resonance phenomena.
  • This also applies to the circuit configuration of the lower arm. In other words, when it is difficult to equalize the conduction paths from the second power terminal section 51SW (or the fourth power terminal section 52SW) to the fourth electrode 21 (drain) of each second switching element 2, the Increasing the impedance between the respective sixth electrodes 23 (gates) by the two-circuit component 32B is effective in suppressing resonance phenomena.
  • the semiconductor device A11 differs from the semiconductor device A1 in the following points. First, the configuration of the conduction path from the first signal terminal 61 to the third electrode 13 of each first switching element 1 is different. Second, the configuration of the conduction path from the second signal terminal 62 to the sixth electrode 23 of each second switching element 2 is different. Thirdly, the configuration of the conduction path from the third signal terminal 63 to the second electrode 12 (first detection pad 122) of each first switching element 1 is different. Accordingly, the semiconductor device A11 further includes a plurality of third circuit components 33A. Fourthly, the configuration of the conduction path from the fourth signal terminal 64 to the fifth electrode 22 (second detection pad 222) of each second switching element 2 is different. Accordingly, the semiconductor device A11 further includes a plurality of fourth circuit components 33B.
  • each relay section 524 is electrically connected to the adjacent individual section 522 on the x1 side in the second direction x via one of the plurality of first circuit components 32A, while being electrically connected to the other first circuit component 32A.
  • conduction is established to the individual portion 522 adjacent to the x2 side in the second direction x. Therefore, the two individual parts 522 adjacent in the second direction x are electrically connected via the two first circuit components 32A and one relay part 524. Note that in the illustrated example, two individual parts 522 adjacent to each other in the second direction x are electrically connected via two first circuit components 32A; Good too.
  • the number of relay parts 524 disposed between two adjacent individual parts 522 in the second direction x may be increased, and the first circuit component 32A may be joined to the relay parts 524 as well.
  • the extending portion 523 of the semiconductor device A11 is not connected to any of the plurality of individual portions 522 and is separated from the plurality of individual portions 522.
  • the extending portion 523 and the adjacent individual portion 522 are connected to the first circuit component 32A, and are electrically connected via the first circuit component 32A.
  • the conduction path from the second signal terminal 62 to the sixth electrode 23 of each second switching element 2 is configured as follows.
  • two individual parts 532 adjacent in the second direction x are electrically connected via the plurality of second circuit components 32B connected in series.
  • the second signal wiring section 53 of the semiconductor device A11 includes a plurality of relay sections 534.
  • the plurality of relay parts 534 are arranged one each between two individual parts 532 adjacent to each other in the second direction x.
  • the second circuit component 32B is joined to the relay section 534 and the individual section 532 which are adjacent to each other.
  • each relay section 534 is electrically connected to the adjacent individual section 532 on the x1 side in the second direction x via one of the plurality of second circuit components 32B, and is connected to the other second circuit component 32B. Through one of them, conduction is established to the individual portion 532 adjacent to the x2 side in the second direction x.
  • two individual parts 532 adjacent in the second direction x are electrically connected via two second circuit components 32B; Good too.
  • the number of relay parts 534 arranged between adjacent individual parts 532 may be increased, and the second circuit component 32B may be joined to the relay parts 534 as well.
  • the extending portion 533 of the semiconductor device A11 is divided into two portions and includes a relay portion 536.
  • any two individual portions 555 adjacent to each other in the second direction x are electrically connected via a corresponding one of the plurality of fourth circuit components 33B.
  • the plurality of individual parts 555 are arranged on the side opposite to the side where the plurality of first switching elements 1 are located with respect to the plurality of second switching elements 2 in the first direction y (first direction y y2 side).
  • the fourth signal wiring section 55 similarly to the second signal wiring section 53, two adjacent individual sections 555 in the second direction x are electrically connected via the plurality of fourth circuit components 33B connected in series. You may let them.
  • the extending portion 554 is divided into two parts, and the fourth circuit component 33B is joined across the two parts. Thereby, the fifth electrode 22 (second detection pad 222) of the second switching element 2 located closest to x2 in the second direction x among the plurality of second switching elements 2 and the fourth signal terminal 64 are connected.
  • a fourth circuit component 33B is also connected in between.
  • a plurality of first circuit components 32A connected in series are electrically interposed between two individual parts 522 adjacent in the second direction x.
  • the individual performances such as the target frequency band and impedance described above
  • variations in the performance of each first switching element 1 can be prevented.
  • the impedance between the two individual parts 522 can be easily adjusted depending on the unevenness of the currents (drain currents). This also applies to the plurality of second circuit components 32B connected in series between two individual parts 532 adjacent in the second direction x.
  • the pad section 518 is spaced apart from the first power wiring section 511 and the second power wiring section 512.
  • a notch is formed in a part of the first power wiring section 511 and the second power wiring section 512 when viewed from above, and the pad section 518 is arranged in a region defined by the notch. .
  • the pad portion 518 is located between the first power terminal portion 5N and the second power terminal portion 51SW, and the plurality of first switching elements 1 and the plurality of second switching elements 2 in the second direction x.
  • a first capacitor 311A and a first resistor 312A are connected to the pad portion 518.
  • each semiconductor device A1 (A11), A2 was equipped with a plurality of first switching elements 1, but unlike this example, it is equipped with one first switching element 1. It can also be a configuration.
  • each of the semiconductor devices A1 (A11) and A2 includes a plurality of second switching elements 2, but unlike this example, it may be configured to include one second switching element 2.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device of the present disclosure can be modified in various ways.
  • the present disclosure includes the embodiments described in the appendix below. Additional note 1.
  • at least one first switching element each of which has a first electrode, a second electrode, and a third electrode, and whose switching operation is controlled according to a first drive signal input to the third electrode;
  • at least one second switching element each of which has a fourth electrode, a fifth electrode, and a sixth electrode, and whose switching operation is controlled according to a second drive signal input to the sixth electrode;
  • an insulating substrate having a main surface and a back surface facing opposite to each other in the thickness direction, a wiring board having main surface wiring formed on the main surface, and back surface wiring formed on the back surface; a first mounting section mounting the at least one first switching element; a second mounting section mounting the at least one second switching element; a first snubber element joined to the main surface wiring; a
  • the first power wiring section and the second power wiring section are spaced apart in a first direction perpendicular to the thickness direction,
  • Appendix 7. The first power wiring part and the third power wiring part overlap each other when viewed in the thickness direction,
  • the third power wiring section is electrically connected to the first mounting section
  • the semiconductor device according to appendix 7, wherein the fourth power wiring section is electrically connected to the second mounting section.
  • the wiring board includes a metal member that penetrates the insulating board in the thickness direction, The semiconductor device according to appendix 8, wherein the second power wiring section and the fourth power wiring section are electrically connected to each other via the metal member.
  • the first power wiring section includes a first power terminal section exposed from the resin member, The first power terminal portion is located at one end of the first power wiring portion in a second direction perpendicular to the thickness direction and the first direction
  • the second power wiring section includes a second power terminal section exposed from the resin member, The semiconductor device according to appendix 8 or 9, wherein the second power terminal section is located at the end of the second power wiring section on the one side in the second direction.
  • the first snubber element is located between the at least one first switching element and the at least one second switching element, and the first power terminal part and the second power terminal part in the second direction. death, The second snubber element is located between the at least one first switching element and the at least one second switching element and the third power terminal part and the fourth power terminal part in the second direction.
  • the at least one first switching element includes a plurality of first switching elements, The semiconductor device according to appendix 13, wherein the plurality of first switching elements are connected in parallel to each other and arranged along the second direction. Appendix 15.
  • the at least one second switching element includes a plurality of second switching elements, The semiconductor device according to attachment 13 or attachment 14, wherein the plurality of second switching elements are connected in parallel to each other and arranged along the second direction.
  • Appendix 16. a first signal terminal for inputting the first drive signal; further comprising a second signal terminal for inputting the second drive signal,
  • the main surface wiring includes a first signal wiring part electrically connected to the third electrode of each of the at least one first switching element, and a first signal wiring part electrically connected to the sixth electrode of each of the at least one second switching element. 2 signal wiring section;
  • the first signal terminal is electrically connected to the first signal wiring section,
  • the semiconductor device according to any one of appendices 1 to 15, wherein the second signal terminal is electrically connected to the second signal wiring section.
  • Appendix 17 a third signal terminal for detecting the operating state of the at least one first switching element; further comprising a fourth signal terminal for detecting the operating state of the at least one second switching element,
  • the main surface wiring includes a third signal wiring part electrically connected to the second electrode of each of the at least one first switching element, and a third signal wiring part electrically connected to the fourth electrode of each of the at least one second switching element. 4 signal wiring parts,
  • the third signal terminal is electrically connected to the third signal wiring section,
  • the semiconductor device according to appendix 16 wherein the fourth signal terminal is electrically connected to the fourth signal wiring section.
  • A1, A11, A2 Semiconductor device 1: First switching element 10a: Element main surface 10b: Element back surface 11: First electrode 12: Second electrode 121: First power pad 122: First detection pad 13: Third electrode 19: Conductive bonding material 2: Second switching element 20a: Element main surface 20b: Element back surface 21: Fourth electrode 22: Fifth electrode 221: Second power pad 222: Second detection pad 23: Sixth electrode 29: Conductive bonding material 31A: First snubber element 311A: First capacitor 3111: Terminal portion 312A: First resistor 3121: Terminal portion 319A: Conductive bonding material 31B: Second snubber element 311B: Second capacitor 3112: Terminal portion 312B: Second resistor 3122: Terminal portion 319B: Conductive bonding material 32A: First circuit component 32B: Second circuit component 33A: Third circuit component 33B: Fourth circuit component 4: Support member 41: First mounting portion 419: Bonding material 41a: Mounting surface 42: Second mounting portion 42a: Mounting surface 4

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteur comprenant un premier élément de commutation, un second élément de commutation, un substrat de câblage, une première section de montage, une seconde section de montage, un premier élément amortisseur et un second élément amortisseur. Le substrat de câblage comprend un substrat d'isolation, un câblage de surface principale et un câblage de surface arrière. Le câblage de surface principale comprend une première section de câblage d'alimentation et une deuxième section de câblage d'alimentation. Le câblage de surface arrière comprend une troisième section de câblage d'alimentation et une quatrième section de câblage d'alimentation. Le premier élément amortisseur est électriquement connecté entre la première section de câblage d'alimentation et la deuxième section de câblage d'alimentation. Le second élément amortisseur est électriquement connecté entre la troisième section de câblage d'alimentation et la quatrième section de câblage d'alimentation.
PCT/JP2023/020496 2022-06-15 2023-06-01 Dispositif à semi-conducteur WO2023243418A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022096515 2022-06-15
JP2022-096515 2022-06-15

Publications (1)

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WO2023243418A1 true WO2023243418A1 (fr) 2023-12-21

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339008A (ja) * 2000-03-24 2001-12-07 Ngk Spark Plug Co Ltd 配線基板
JP2002164462A (ja) * 2000-11-28 2002-06-07 Nec Corp 半導体装置およびその実装方法
JP2017059778A (ja) * 2015-09-18 2017-03-23 株式会社デンソー 半導体モジュール
WO2017183385A1 (fr) * 2016-04-21 2017-10-26 株式会社村田製作所 Module d'alimentation électrique
JP2022025587A (ja) * 2020-07-29 2022-02-10 ローム株式会社 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001339008A (ja) * 2000-03-24 2001-12-07 Ngk Spark Plug Co Ltd 配線基板
JP2002164462A (ja) * 2000-11-28 2002-06-07 Nec Corp 半導体装置およびその実装方法
JP2017059778A (ja) * 2015-09-18 2017-03-23 株式会社デンソー 半導体モジュール
WO2017183385A1 (fr) * 2016-04-21 2017-10-26 株式会社村田製作所 Module d'alimentation électrique
JP2022025587A (ja) * 2020-07-29 2022-02-10 ローム株式会社 半導体装置

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