WO2023234343A1 - コンデンサ、電気回路、回路基板、機器、及びコンデンサの製造方法 - Google Patents

コンデンサ、電気回路、回路基板、機器、及びコンデンサの製造方法 Download PDF

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WO2023234343A1
WO2023234343A1 PCT/JP2023/020267 JP2023020267W WO2023234343A1 WO 2023234343 A1 WO2023234343 A1 WO 2023234343A1 JP 2023020267 W JP2023020267 W JP 2023020267W WO 2023234343 A1 WO2023234343 A1 WO 2023234343A1
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Prior art keywords
tantalum
capacitor
oxide film
fluorine
metal
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PCT/JP2023/020267
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English (en)
French (fr)
Japanese (ja)
Inventor
丈人 後藤
直也 北村
学 加納
諒介 菊地
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Priority to EP23816100.4A priority Critical patent/EP4535387A4/en
Priority to CN202380043982.XA priority patent/CN119301720A/zh
Priority to KR1020247038983A priority patent/KR20250018492A/ko
Priority to JP2024524905A priority patent/JPWO2023234343A1/ja
Publication of WO2023234343A1 publication Critical patent/WO2023234343A1/ja
Priority to US18/960,931 priority patent/US20250087426A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0032—Processes of manufacture formation of the dielectric layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/022—Electrolytes; Absorbents
    • H01G9/025—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
    • H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors incorporating printed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10015—Non-printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal

Definitions

  • the present disclosure relates to capacitors, electric circuits, circuit boards, devices, and methods of manufacturing capacitors.
  • Patent Document 1 describes a solid electrolytic capacitor including a dielectric layer made of tantalum oxide containing fluorine.
  • the dielectric layer is formed by anodizing a tantalum anode in an aqueous solution containing fluorine ions.
  • Non-Patent Document 1 describes that the dielectric constant of a polycrystalline TaO 2 F thin film at 1 MHz is 60.
  • the present disclosure provides a capacitor that is advantageous from the viewpoint of reducing the dielectric loss tangent while using tantalum oxide containing fluorine.
  • the capacitor of the present disclosure is metal tantalum, a conductor; a tantalum oxide film disposed in contact with the metal tantalum and between the metal tantalum and the conductor,
  • the tantalum oxide film includes a first region containing fluorine and a second region located closer to the metal tantalum than the first region in the thickness direction of the tantalum oxide film, The concentration of fluorine in the second region is lower than the concentration of fluorine in the first region.
  • FIG. 1 is a cross-sectional view showing an example of a capacitor according to the present disclosure.
  • FIG. 2 is a flowchart illustrating an example of the capacitor manufacturing method of the present disclosure.
  • FIG. 3 is a cross-sectional view showing another example of the capacitor of the present disclosure.
  • FIG. 4A is a diagram schematically showing an example of an electric circuit according to the present disclosure.
  • FIG. 4B is a diagram schematically showing an example of a circuit board of the present disclosure.
  • FIG. 4C is a diagram schematically showing an example of the device of the present disclosure.
  • FIG. 5 is a graph showing an XRD pattern of a dielectric film of a sample according to Example 1.
  • FIG. 1 is a cross-sectional view showing an example of a capacitor according to the present disclosure.
  • FIG. 2 is a flowchart illustrating an example of the capacitor manufacturing method of the present disclosure.
  • FIG. 3 is a cross-sectional view showing another example of the capacitor of the present disclosure.
  • FIG. 6 is a graph showing the relationship between the signal intensities of F ⁇ , TaO 3 ⁇ , and O ⁇ in time-of-flight secondary ion mass spectrometry (TOF-SIMS) of the sample according to Example 1 and the depth in the dielectric film. It is.
  • FIG. 7 is a graph showing the relationship between the signal intensities of F ⁇ , TaO 3 ⁇ , and O ⁇ in TOF-SIMS of the tantalum oxide film of the sample according to Comparative Example 1 and the depth in the dielectric film.
  • FIG. 8A is a graph showing the relationship between capacitance and frequency of an example capacitor.
  • FIG. 8B is a graph showing the relationship between capacitance and frequency of an example capacitor.
  • FIG. 9A is a graph showing the relationship between the dielectric loss tangent tan ⁇ and frequency of an exemplary capacitor.
  • FIG. 9B is a graph showing the relationship between the dielectric loss tangent tan ⁇ and frequency of an exemplary
  • capacitors are known as capacitors.
  • a dielectric material made of a thin oxide film is formed on the surface of aluminum metal or tantalum metal by chemical conversion treatment of aluminum or tantalum.
  • electrolytic capacitors attempts have been made to increase the capacitance of the capacitor mainly by increasing the specific surface area of the dielectric. On the other hand, there are limitations to such attempts, and it is believed that if dielectric materials with higher dielectric constants can be developed, the performance of capacitors can be further improved.
  • the polycrystalline TaO 2 F thin film described in Non-Patent Document 1 has a high dielectric constant. It is thought that polycrystalline tantalum oxyfluoride has a crystal state different from that of tantalum oxide Ta 2 O 5 and thus has large polarization and a high dielectric constant.
  • the present inventors found that tantalum oxide containing fluorine has a higher concentration than tantalum oxide Ta2O5 , which does not contain fluorine, even when the tantalum oxide is amorphous. It was discovered that the material has a relative dielectric constant. For these reasons, it is expected that by using tantalum oxide containing fluorine in a capacitor, the capacitance of the capacitor will increase.
  • the dielectric layer is formed by anodizing a tantalum anode in an aqueous solution containing fluorine ions. It has been reported that the equivalent series resistance (ESR) of an electrolytic capacitor is reduced because the dielectric layer is made of tantalum oxide containing fluorine. On the other hand, according to studies conducted by the present inventors, it has been found that there are conditions under which the dielectric loss tangent of a film obtained by anodic oxidation of tantalum in an aqueous solution containing fluorine ions becomes high. It was found that in such a film, fluorine gathers at the interface between tantalum oxide and tantalum alone, forming a region with a high fluorine concentration.
  • the present inventors have conducted extensive studies on the structure of a capacitor for reducing the dielectric loss tangent while using tantalum oxide containing fluorine. As a result, it was newly discovered that a tantalum oxide film having a specific structure is advantageous for reducing the dielectric loss tangent. The present inventors completed the capacitor of the present disclosure based on this new knowledge.
  • the capacitor according to the first aspect of the present disclosure includes: metal tantalum, a conductor; a tantalum oxide film disposed in contact with the metal tantalum and between the metal tantalum and the conductor,
  • the tantalum oxide film includes a first region containing fluorine and a second region located closer to the metal tantalum than the first region in the thickness direction of the tantalum oxide film, The concentration of fluorine in the second region is lower than the concentration of fluorine in the first region.
  • the concentration of fluorine near the metal tantalum of the tantalum oxide film is unlikely to increase. Therefore, although the tantalum oxide film includes the first portion containing fluorine, the dielectric loss tangent of the capacitor tends to be low.
  • the first portion may be amorphous.
  • the capacitor has a high capacity and can prevent current leakage due to the crystalline phase.
  • the first portion may have a composition represented by TaO x F y , and the composition is 0 ⁇ The condition x ⁇ 2.5 may be satisfied.
  • the tantalum oxide film tends to have a high dielectric constant, and the capacitor tends to have a high capacitance.
  • the composition may further satisfy the condition of y ⁇ 0.015.
  • the tantalum oxide film is more likely to have a high dielectric constant, and the capacitor is more likely to have a high capacitance.
  • the composition may further satisfy the condition of y ⁇ 0.40.
  • fluorine contained in the tantalum oxide film is easily prevented from diffusing toward tantalum metal due to the effects of electric fields, heat, etc., and the tantalum oxide film is less likely to change in quality. Therefore, the performance of the capacitor tends to be stable.
  • the concentration of fluorine in the second portion is 0.4% or less on an atomic basis. Good too. According to the sixth aspect, the concentration of fluorine near the metal tantalum of the tantalum oxide film is less likely to increase, and the dielectric loss tangent of the capacitor is more likely to be lowered.
  • the second portion may have a thickness of greater than 5 nm and less than or equal to 100 nm.
  • the tantalum oxide film tends to have a high dielectric constant, and the capacitor tends to have a high capacitance.
  • the thickness of the second portion is greater than 5 nm, diffusion of fluorine toward metal tantalum is easily prevented, and the dielectric loss tangent of the capacitor is likely to be lowered.
  • the thickness of the natural oxide film formed on the surface of tantalum metal is usually about 5 nm.
  • the capacitor according to any one of the first to seventh aspects may further include an electrolyte disposed between the tantalum oxide film and the conductor. good.
  • the capacitor can be configured as an electrolytic capacitor, and the capacitor tends to have a high capacitance.
  • An electric circuit according to a ninth aspect of the present disclosure includes a capacitor according to any one of the first to eighth aspects.
  • the tantalum oxide film of the capacitor includes the first portion containing fluorine, and the dielectric loss tangent of the capacitor tends to be low, so that the electric circuit can easily exhibit desired performance.
  • a circuit board includes a capacitor according to any one of the first to eighth aspects.
  • the tantalum oxide film of the capacitor includes the first portion containing fluorine, and the dielectric loss tangent of the capacitor tends to be low, so that the circuit board can easily exhibit desired performance.
  • a device includes a capacitor according to any one of the first to eighth aspects.
  • the tantalum oxide film of the capacitor includes the first portion containing fluorine, and the dielectric loss tangent of the capacitor tends to be low, so that the device can easily exhibit desired performance.
  • a method for manufacturing a capacitor according to a twelfth aspect of the present disclosure includes performing anodization on the tantalum metal in a state in which the tantalum metal is brought into contact with a fluorine-free aqueous solution, and forming the tantalum on the tantalum metal formed by the anodization.
  • the tantalum oxide layer is anodized in a state where it is in contact with a fluorine-containing aqueous solution to obtain a tantalum oxide film containing fluorine on the surface region of the tantalum oxide layer.
  • the tantalum oxide film includes a portion containing fluorine and has a low dielectric loss tangent.
  • FIG. 1 is a cross-sectional view showing an example of the capacitor of the present disclosure.
  • the capacitor 1a includes a tantalum metal 10, a conductor 20, and a tantalum oxide film 30.
  • the tantalum oxide film 30 is placed in contact with the tantalum metal 10 and between the tantalum metal 10 and the conductor 20.
  • Tantalum oxide film 30 includes a layered first portion 31 containing fluorine and a layered second portion 32.
  • the first portion 31 corresponds to a region on the surface side (surface region) of the tantalum oxide film 30 in the thickness direction of the tantalum oxide film 30 .
  • the second portion 32 is located closer to the tantalum metal 10 than the first portion 31 in the thickness direction of the tantalum oxide film 30 . Additionally, the concentration of fluorine in second region 32 is lower than the concentration of fluorine in first region 31 .
  • the tantalum oxide film 30 includes the layered first portion 31 containing fluorine, it tends to have a high dielectric constant. Therefore, the capacitor 1a tends to have a high capacitance. Since the tantalum oxide film 30 has a layered second region 32 with a lower fluorine concentration at a position closer to the tantalum metal 10 than the first region 31, fluorine at the interface between the tantalum oxide film 30 and the tantalum metal 10 is reduced. Concentration does not easily increase. Therefore, the dielectric loss tangent of the capacitor 1a tends to become low.
  • the dielectric loss tangent of the capacitor 1a is, for example, 0.20 or less at a frequency of 1 Hz to 10 kHz.
  • the boundary between the first region 31 and other regions in the tantalum oxide film 30 can be determined, for example, by observing a cross section along the thickness direction of the tantalum oxide film 30 using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). Sometimes it may form a visible interface.
  • SEM scanning electron microscope
  • TEM transmission electron microscope
  • the boundary between the first portion 31 and other portions in the tantalum oxide film 30 may be virtual, and when a cross section along the thickness direction of the tantalum oxide film 30 is viewed by SEM or TEM, the first portion The interface between 31 and other parts may not be visible.
  • the boundary between the second region 32 and other regions in the tantalum oxide film 30 may form an interface that is visible when a cross section along the thickness direction of the tantalum oxide film 30 is viewed with an SEM or TEM, for example. .
  • the boundary between the second region 32 and other regions in the tantalum oxide film 30 may be virtual, and when a cross section along the thickness direction of the tantalum oxide film 30 is viewed by SEM or TEM, the boundary between the second region 32 and other regions may be virtual.
  • the interface between 32 and other parts may not be visible.
  • the position of the first portion 31 is not limited to a specific position.
  • the first portion 31 exists, for example, at a position corresponding to a depth of 100 nm or less from the main surface closest to the conductor 20 in the thickness direction of the tantalum oxide film 30.
  • the first portion 31 may be crystalline or amorphous. Even if the first portion 31 is amorphous, the tantalum oxide film 30 tends to have a high dielectric constant, and the capacitor 1a tends to have a high capacitance. For example, if a broad halo pattern is shown in the XRD pattern of the target using Cu-K ⁇ rays at a diffraction angle of 2 ⁇ from 10° to 50°, it can be determined that the target is amorphous.
  • the second portion 32 may be crystalline or amorphous.
  • the composition of the first region 31 is not limited to a particular composition.
  • the first portion 31 does not contain silicon or titanium, for example.
  • the first region 31 has a composition represented by, for example, TaO x F y . This composition satisfies the condition of 0 ⁇ x ⁇ 2.5, for example. In this case, the tantalum oxide film 30 tends to have a high dielectric constant, and the capacitor 1a tends to have a high capacitance.
  • the condition of y ⁇ 0.015 is satisfied.
  • the tantalum oxide film 30 is more likely to have a high dielectric constant, and the capacitor 1a is more likely to have a high capacitance.
  • y ⁇ 0.016, y ⁇ 0.017, y ⁇ 0.018, y ⁇ 0.019, y ⁇ 0.02, y ⁇ 0.03, y ⁇ 0.05, or y ⁇ The condition of 0.1 may be satisfied, the condition of y ⁇ 0.2 may be satisfied, and the condition of y ⁇ 0.3 may be satisfied.
  • the above composition may satisfy the conditions of 0 ⁇ x ⁇ 2.5 and 0 ⁇ y ⁇ 0.015.
  • the condition of y ⁇ 0.40 may be further satisfied.
  • fluorine contained in the tantalum oxide film 30 is easily prevented from diffusing toward the tantalum metal 10 due to the effects of electric field, heat, etc., and the tantalum oxide film 30 is less likely to change in quality.
  • the following conditions may be satisfied: 0 ⁇ y ⁇ 0.40, 0 ⁇ y ⁇ 0.40, or 0.015 ⁇ y ⁇ 0.40.
  • the concentration of fluorine in the second region 32 is not limited to a specific value.
  • the concentration of fluorine in the second portion 32 is, for example, 0.4% or less based on the number of atoms. In other words, the ratio of the number of fluorine atoms to the total number of atoms contained in the second portion 32 is 0.4% or less. In this case, the concentration of fluorine in the tantalum oxide film 30 near the tantalum metal 10 is less likely to increase, and the dielectric loss tangent of the capacitor 1a is more likely to be lowered.
  • the concentration of fluorine in the second region 32 can be determined, for example, based on the results of TOF-SIMS.
  • the concentration of fluorine at second site 32 may be determined using a combination of TOF-SIMS and another analytical method such as Rutherford backscatter spectroscopy (RBS).
  • RBS Rutherford backscatter spectroscopy
  • the concentration of fluorine in the second region 32 may be 0.3% or less, 0.2% or less, 0.1% or less, or 0.05% or less based on the number of atoms. However, it may be 0.01% or less.
  • the F ⁇ signal intensity ratio R F in TOF-SIMS of the tantalum oxide film 30 is not limited to a specific value.
  • the signal strength ratio RF is the ratio of the second signal strength RF2 to the first signal strength RF1 .
  • the first signal intensity R F1 is the F ⁇ signal intensity at a depth corresponding to the first TOF-SIMS portion 31 of the tantalum oxide film 30 .
  • the second signal intensity R F2 is the signal intensity of F ⁇ at a depth corresponding to the second portion 32 of TOF-SIMS of the tantalum oxide film 30.
  • the signal intensity ratio R F is, for example, 0.0026 or more.
  • the concentration of fluorine in the tantalum oxide film 30 near the tantalum metal 10 is less likely to increase, and the dielectric loss tangent of the capacitor 1a is more likely to be lowered.
  • the signal intensity ratio R F may be 0.005 or more, 0.01 or more, or 0.05 or more.
  • the signal intensity ratio R F is, for example, 0.1 or less.
  • the thickness of the second portion 32 is not limited to a specific value.
  • the thickness is, for example, 100 nm or less.
  • the ratio of the thickness of the second portion 32 to the total thickness of the tantalum oxide film 30 tends to be low. Since the fluorine concentration in the second region 32 is lower than the fluorine concentration in the first region 31, the second region 32 is unlikely to have a high dielectric constant. Therefore, if the ratio of the second portion 32 to the total thickness of the tantalum oxide film 30 is low, the relative permittivity of the entire tantalum oxide film 30 tends to be high, and the capacitor 1a tends to have a high capacitance.
  • the thickness of the second portion 32 may be greater than 5 nm and less than or equal to 100 nm. As described above, when the thickness of the second portion 32 is 100 nm or less, the overall dielectric constant of the tantalum oxide film 30 tends to be high, and the capacitor 1a tends to have a high capacitance. When the thickness of the second portion 32 is greater than 5 nm, diffusion of fluorine toward the tantalum metal 10 in the tantalum oxide film 30 is likely to be prevented, and the dielectric loss tangent of the capacitor 1a is likely to be lowered.
  • the thickness of the second portion 32 may be 11 nm or more, 12 nm or more, 15 nm or more, or 20 nm or more.
  • the thickness of the second portion 32 may be 90 nm or less, 80 nm or less, or 70 nm or less.
  • the thickness of the second portion 32 may fall within a predetermined range.
  • the lower limit of the range is, for example, one selected from the group consisting of 5 nm, 7 nm, 12 nm, 15 nm, and 20 nm.
  • the upper limit of the range is, for example, one selected from the group consisting of 70 nm, 80 nm, 90 nm, and 100 nm.
  • the thickness of the second portion 32 is greater than 5 nm, and when a value other than 5 nm is selected as the lower limit, the thickness of the second portion 32 is greater than or equal to the selected value. It means that. This means that the thickness of the second portion 32 is less than or equal to the selected upper limit.
  • FIG. 2 is a flowchart showing an example of a method for manufacturing the capacitor 1a.
  • the capacitor 1a is formed, for example, by a method including the following (I) and (II).
  • anodization for example, a voltage of several volts to several hundred volts is applied between the anode and the cathode with an electrolyte placed between the anode and the cathode.
  • tantalum metal is used as the anode
  • anion attracted toward tantalum metal and ionized tantalum combine to form a chemically formed film.
  • ions or atoms, which are impurities derived from the electrolyte present around the anode may be incorporated into the chemically formed film.
  • the capacitor 1a other elements such as fluorine may enter the second portion 32 at an impurity level.
  • the impurity level means, for example, that the second region 32 may contain other elements other than tantalum and oxygen, such as fluorine, at a concentration of 0.4% or less on an atomic basis.
  • step S103 a tantalum oxide film 30 is placed between the metal tantalum and the conductor 20.
  • the conductor 20 is placed on the opposite side of the tantalum metal 10 with respect to the tantalum oxide film 30.
  • capacitor 1a is obtained in this way.
  • the conductor 20 in the capacitor 1a is not limited to a specific material.
  • the conductor 20 may contain a valve metal such as aluminum, tantalum, niobium, and bismuth, may contain a noble metal such as gold and platinum, or may contain nickel.
  • the conductor 20 may include carbon material such as graphite.
  • the capacitor 1a includes, for example, an electrolyte 40. Electrolyte 40 is placed between tantalum oxide film 30 and conductor 20. In this case, capacitor 1a is provided as an electrolytic capacitor. In the capacitor 1a, the electrolyte 40 has, for example, layers. The electrolyte 40 may be omitted in the capacitor 1a.
  • the electrolyte 40 is not limited to a specific electrolyte.
  • the electrolyte 40 includes, for example, at least one selected from the group consisting of an electrolytic solution and a conductive polymer. Examples of conductive polymers are polypyrrole, polythiophene, polyaniline, and derivatives thereof.
  • the electrolyte 40 may be a manganese compound such as manganese oxide.
  • Electrolyte 40 may include a solid electrolyte.
  • FIG. 3 is a cross-sectional view showing another example of the capacitor of the present disclosure.
  • the capacitor 1b shown in FIG. 3 has the same structure as the capacitor 1a except for the parts to be specifically explained. Components of the capacitor 1b that are the same as or correspond to components of the capacitor 1a are given the same reference numerals, and detailed description thereof will be omitted. The description regarding capacitor 1a also applies to capacitor 1b unless technically contradictory.
  • the tantalum metal 10 is porous. According to such a configuration, the surface area of the tantalum metal 10 tends to be large, and the capacitor 1b tends to have a high capacity.
  • a porous structure can be formed, for example, by etching metal foil and sintering powder.
  • a tantalum oxide film 30 is disposed on the surface of the porous portion of the tantalum metal 10. As described above, the tantalum oxide film 30 is formed by, for example, anodization. Electrolyte 40 is arranged so as to fill the voids around the porous portion of first electrode 10 .
  • the electrolyte 40 includes, for example, at least one selected from the group consisting of manganese oxide, electrolyte, and conductive polymer. Examples of conductive polymers are polypyrrole, polythiophene, polyaniline, and derivatives thereof.
  • the electrolyte 40 may be a manganese compound such as manganese oxide. Electrolyte 40 may include a solid electrolyte.
  • the conductor 20 and the electrolyte 40 constitute a cathode, for example.
  • the conductor 20 may include, for example, a solidified silver-containing paste, a carbon material such as graphite, or both the solidified material and the carbon material.
  • FIG. 4A is a diagram schematically showing an example of an electric circuit of the present disclosure.
  • the electric circuit 3 includes a capacitor 1a.
  • the electric circuit 3 may be an active circuit or a passive circuit.
  • the electric circuit 3 may be a discharge circuit, a smoothing circuit, a decoupling circuit, or a coupling circuit. Since the electric circuit 3 includes the capacitor 1a, the electric circuit 3 can easily exhibit desired performance. For example, noise in the electric circuit 3 is likely to be reduced.
  • the electric circuit 3 may include a capacitor 1b.
  • FIG. 4B is a diagram schematically showing an example of the circuit board of the present disclosure.
  • the circuit board 5 includes a capacitor 1a.
  • an electric circuit 3 including a capacitor 1a is formed on the circuit board 5, an electric circuit 3 including a capacitor 1a is formed. Since the circuit board 5 includes the capacitor 1a, the circuit board 5 can easily exhibit desired performance.
  • the circuit board 5 may be an embedded board or a motherboard.
  • the circuit board 5 may include a capacitor 1b.
  • FIG. 4C is a diagram schematically showing an example of the device of the present disclosure.
  • the device 7 includes a capacitor 1a.
  • the device 7 includes, for example, a circuit board 5 including a capacitor 1a. Since the device 7 includes the capacitor 1a, the device 7 can easily exhibit desired performance.
  • the device 7 may be an electronic device, a communication device, a signal processing device, or a power supply device.
  • the device 7 may be a server, an AC adapter, an accelerator, or a flat panel display such as a liquid crystal display (LCD).
  • the device 7 may be a USB charger, a solid state drive (SSD), an information terminal such as a PC, a smartphone, or a tablet PC, or an Ethernet switch. It's okay.
  • the device 7 may include a capacitor 1b.
  • Example 1 The tantalum metal was immersed in a container filled with acetone and subjected to ultrasonic cleaning for 10 minutes to clean the surface of the tantalum metal. Thereafter, the acetone adhering to the surface of the tantalum metal was evaporated, and the surface of the tantalum metal was washed with pure water. The tantalum metal was then dried in air.
  • tantalum metal and platinum foil as a counter electrode were placed at a predetermined interval.
  • the part of the tantalum metal that was not immersed in the aqueous solution was connected to the positive electrode of the power supply, and the part of the platinum foil that was not immersed in the aqueous solution was connected to the negative electrode of the power supply.
  • a current was passed from the power supply in a constant voltage state, and a voltage of 64 V was applied between the metal tantalum and the counter electrode for 30 minutes.
  • An electrochemical reaction was caused on the surface of the metal tantalum that serves as the anode, and an oxide film was obtained.
  • the tantalum metal with the oxide film formed thereon was taken out of the aqueous solution, washed with pure water, and dried in the air.
  • the metal tantalum with an oxide film formed thereon is placed as an anode, and the platinum foil is placed as a cathode, and the parts of the anode and cathode that are not immersed in the aqueous solution are used as the positive and negative electrodes of the power supply device, respectively. connected to.
  • the concentration of NH 4 HF 2 in the aqueous solution was 0.5 mol/liter (mol/L).
  • a current was passed from the power supply in a constant voltage state, and a voltage of 80 V was applied between the anode and the cathode for 10 minutes to perform anodization treatment.
  • Example 1 a sample according to Example 1 in which a dielectric film was formed on the surface of tantalum metal was obtained.
  • Example 2 The tantalum metal was immersed in a container filled with acetone and subjected to ultrasonic cleaning for 10 minutes to clean the surface of the tantalum metal. Thereafter, the acetone adhering to the surface of the tantalum metal was evaporated, and the surface of the tantalum metal was washed with pure water. The tantalum metal was then dried in air.
  • tantalum metal and platinum foil as a counter electrode were placed at a predetermined interval.
  • the part of the tantalum metal that was not immersed in the aqueous solution was connected to the positive electrode of the power supply, and the part of the platinum foil that was not immersed in the aqueous solution was connected to the negative electrode of the power supply.
  • a current was passed from the power supply in a constant voltage state, and a voltage of 64 V was applied between the metal tantalum and the counter electrode for 30 minutes.
  • An electrochemical reaction was caused on the surface of the metal tantalum that serves as the anode, and an oxide film was obtained.
  • the tantalum metal with the oxide film formed thereon was taken out of the aqueous solution, washed with pure water, and dried in the air.
  • the metal tantalum with an oxide film formed thereon is placed as an anode, and the platinum foil is placed as a cathode, and the parts of the anode and cathode that are not immersed in the aqueous solution are used as the positive and negative electrodes of the power supply device, respectively. connected to.
  • the concentration of NH 4 HF 2 in the aqueous solution was 1.0 mol/L.
  • a current was passed from the power supply in a constant voltage state, and a voltage of 80 V was applied between the anode and the cathode for 10 minutes to perform anodization treatment.
  • Example 2 a sample according to Example 2 in which a dielectric film was formed on the surface of tantalum metal was obtained.
  • ⁇ Comparative example 1> The tantalum metal was immersed in a container filled with acetone and subjected to ultrasonic cleaning for 10 minutes to clean the surface of the tantalum metal. Thereafter, the acetone adhering to the surface of the tantalum metal was evaporated, and the surface of the tantalum metal was washed with pure water. The tantalum metal was then dried in air.
  • tantalum metal was placed as an anode and platinum foil was placed as a cathode in an aqueous NH 4 HF 2 solution, and the portions of the anode and cathode that were not immersed in the aqueous solution were connected to the positive and negative electrodes of the power supply, respectively.
  • the concentration of NH 4 HF 2 in the aqueous solution was 0.5 mol/L.
  • a current was passed from the power supply in a constant voltage state, and a voltage of 80 V was applied between the anode and the cathode for 10 minutes to perform anodization treatment. Thereafter, the anode after the anodization treatment was taken out of the aqueous solution, washed with pure water, and dried. In this way, a sample according to Comparative Example 1 in which a dielectric film was formed on the surface of tantalum metal was obtained.
  • ⁇ Comparative example 2> The tantalum metal was immersed in a container filled with acetone and subjected to ultrasonic cleaning for 10 minutes to clean the surface of the tantalum metal. Thereafter, the acetone adhering to the surface of the tantalum metal was evaporated, and the surface of the tantalum metal was washed with pure water. The tantalum metal was then dried in air.
  • metal tantalum as an anode and platinum foil as a cathode were placed at a predetermined interval.
  • the portions of the anode and cathode that were not immersed in the aqueous solution were connected to the positive and negative electrodes of a power supply, respectively.
  • a current was passed from the power supply device under constant voltage condition, and a voltage of 80 V was applied between the anode and the cathode for 30 minutes.
  • An electrochemical reaction was caused on the surface of tantalum metal, which is the anode, to obtain a dielectric film, which is an oxide film.
  • the tantalum metal with the oxide film formed thereon was taken out of the aqueous solution, washed with pure water, and dried in the air. In this way, a sample according to Comparative Example 2 having a dielectric film formed of tantalum oxide containing no fluorine was obtained.
  • FIG. 5 shows an XRD pattern of a sample dielectric film according to Example 1. In the XRD pattern shown in FIG. 5, no peak derived from the crystal structure is observed, indicating that the tantalum oxide film of the sample according to Example 1 is amorphous.
  • RBS Rutherford backscattering spectroscopy
  • the ratio of the number of fluorine atoms to the number of tantalum atoms in the surface portion of the dielectric layer of the sample according to Example 1 is 0.06
  • the composition of the surface portion of the dielectric layer of the sample according to Example 1 is TaO 2.47 F 0.06
  • the composition of the surface portion of the dielectric layer of the sample according to Example 2 is TaO. It was 2.30F 0.40 .
  • TOF-SIMS A piece of a predetermined size was cut out from the sample according to Example 1, and a sample for TOF-SIMS was prepared by embedding it in resin. Using a TOF-SIMS device TOF.SIMS5 manufactured by ION-TOF, TOF-SIMS was performed on a sample prepared from the sample according to Example 1, and the composition analysis in the depth direction of the oxide film of the dielectric film was performed. went. In TOF-SIMS, a Bi beam was used as the primary ion beam. O 2 was used as the sputtering ion species. FIG.
  • FIG. 6 is a graph showing the relationship between the signal intensities of F ⁇ , TaO 3 ⁇ , and O 2 ⁇ in TOF-SIMS of the sample according to Example 1 and the depth in the dielectric film.
  • the vertical axis shows the signal intensity of each ion
  • the horizontal axis shows the depth in the dielectric film.
  • FIG. 7 is a graph showing the relationship between the signal intensities of F ⁇ , TaO 3 ⁇ , and O 2 ⁇ in TOF-SIMS of the sample according to Comparative Example 1 and the depth in the dielectric film.
  • the vertical axis shows the signal intensity of each ion
  • the horizontal axis shows the depth in the dielectric film.
  • the dielectric film of the sample according to Example 1 is formed on metal tantalum, and includes a region with a high fluorine concentration and a region with a low fluorine concentration.
  • the region with high fluorine concentration exists over a depth of about 60 nm from the surface of the dielectric film.
  • a region with a low fluorine concentration exists in the dielectric film from a depth of about 75 nm to a depth of about 150 nm. Judging from the signal intensity of F - in a region of the dielectric film where the fluorine concentration is low, it is understood that the fluorine concentration in this region is 0.5% or less based on the number of atoms.
  • Ratio of the TOF-SIMS F - signal intensity R F2 of a portion of the tantalum oxide film 30 where the fluorine concentration is low to the TOF-SIMS F ⁇ signal intensity R F1 of the portion of the tantalum oxide film 30 where the fluorine concentration is high. was about 0.1 or less.
  • a depth of about 150 nm or more is understood to correspond to tantalum metal. No increase in fluorine concentration is observed at the boundary between the tantalum metal and the dielectric film.
  • the dielectric film of the sample according to Comparative Example 1 exists over a depth of approximately 180 nm from the surface thereof.
  • an increase in fluorine concentration is confirmed at the boundary between the tantalum metal and the dielectric film. This is because the diffusion rate of fluoride ions is much faster than that of oxide ions, so the diffusion of fluoride ions into the metal tantalum and the production of tantalum fluoride occur prior to the formation of the tantalum oxide film by anodization. It is thought that this was due to an accident. Tantalum fluoride produced in this manner has poor electrical insulation properties and may deteriorate the dielectric properties required for capacitors.
  • Example 1 Capacitance and dielectric loss tangent
  • the sample of Example 1 was attached to an electrochemical cell manufactured by BAS, and the dielectric properties of the capacitor according to Example 1 were evaluated according to the AC impedance method using platinum as a counter electrode.
  • an AC voltage was applied to the capacitor according to Example 1 in an amplitude range of 10 to 100 mV and a frequency range of 1 MHz to 0.1 Hz, and the capacitance was calculated from the resistance value at each frequency.
  • 8A and 8B are graphs showing the relationship between capacitance of a capacitor and frequency. In FIGS. 8A and 8B, the vertical axis indicates capacitance, and the horizontal axis indicates frequency.
  • FIG. 8B is an enlarged view of a portion of FIG. 8A.
  • FIGS. 9A and 9B are graphs showing the relationship between the dielectric loss tangent tan ⁇ of a capacitor and the frequency.
  • the vertical axis shows tan ⁇
  • the horizontal axis shows frequency.
  • FIG. 9B is an enlarged view of a part of FIG. 9A.
  • Example 2 The sample according to Example 2 was attached to an electrochemical cell manufactured by BAS, and the capacitance and dielectric loss tangent tan ⁇ of the capacitor according to Example 2 were determined in the same manner as in Example 1 according to the AC impedance method using platinum as a counter electrode. . The results are shown in FIGS. 8A to 9B.
  • the sample according to Comparative Example 1 was attached to an electrochemical cell manufactured by BAS, and the capacitance and dielectric loss tangent tan ⁇ of the capacitor according to Comparative Example 1 were determined in the same manner as in Example 1 according to the AC impedance method using platinum as a counter electrode. .
  • the results are shown in FIGS. 8A to 9B.
  • the sample according to Comparative Example 2 was attached to an electrochemical cell manufactured by BAS, and the capacitance and dielectric loss tangent tan ⁇ of the capacitor according to Comparative Example 2 were determined in the same manner as in Example 1 according to the AC impedance method using platinum as a counter electrode. .
  • the results are shown in FIGS. 8A to 9B.
  • the dielectric layers of the samples according to Example 1, Example 2, Comparative Example 1, and Comparative Example 2 are formed on metal tantalum with the same surface condition, and there is a large difference in the surface area of the dielectric layer of each sample. It is understood that there is no such thing.
  • FIGS. 8A and 8B the capacitances of the capacitors according to Example 1, Example 2, and Comparative Example 1 are higher than the capacitance of the capacitor according to Comparative Example 2.
  • the capacitance of the capacitor according to Comparative Example 1 is high, as shown in FIGS. 9A and 9B, the dielectric loss tangent tan ⁇ of the capacitor according to Comparative Example 1 is high.
  • the capacitor according to Comparative Example 1 corresponds to the energy consumed inside the capacitor, and it is understood that the capacitor according to Comparative Example 1 has a large electrical energy loss.
  • the dielectric loss tangent tan ⁇ of the capacitors according to Example 1 and Example 2 is low and remains at a value equivalent to the dielectric loss tangent of the capacitor according to Comparative Example 2. Therefore, it is understood that, overall, the capacitors according to Examples 1 and 2 are superior not only in terms of capacity but also in terms of low electrical energy loss.
  • the capacitor according to the present disclosure is advantageous from the viewpoint of reducing the dielectric loss tangent.

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PCT/JP2023/020267 2022-06-01 2023-05-31 コンデンサ、電気回路、回路基板、機器、及びコンデンサの製造方法 Ceased WO2023234343A1 (ja)

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EP23816100.4A EP4535387A4 (en) 2022-06-01 2023-05-31 CAPACITOR, ELECTRIC CIRCUIT, PRINTED CIRCUIT BOARD, CAPACITOR MANUFACTURING DEVICE AND METHOD
CN202380043982.XA CN119301720A (zh) 2022-06-01 2023-05-31 电容器、电路、电路基板、设备及电容器的制造方法
KR1020247038983A KR20250018492A (ko) 2022-06-01 2023-05-31 콘덴서, 전기 회로, 회로 기판, 기기 및 콘덴서의 제조 방법
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WO2026018504A1 (ja) * 2024-07-18 2026-01-22 パナソニックＩｐマネジメント株式会社 キャパシタ、電気回路、回路基板、機器、及びキャパシタの製造方法

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JPH10135080A (ja) * 1996-10-31 1998-05-22 Matsushita Electric Ind Co Ltd 固体電解コンデンサ及びその製造方法
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WO2026018504A1 (ja) * 2024-07-18 2026-01-22 パナソニックＩｐマネジメント株式会社 キャパシタ、電気回路、回路基板、機器、及びキャパシタの製造方法

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