WO2023211756A1 - Resistive differential alignment monitor - Google Patents

Resistive differential alignment monitor Download PDF

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Publication number
WO2023211756A1
WO2023211756A1 PCT/US2023/019265 US2023019265W WO2023211756A1 WO 2023211756 A1 WO2023211756 A1 WO 2023211756A1 US 2023019265 W US2023019265 W US 2023019265W WO 2023211756 A1 WO2023211756 A1 WO 2023211756A1
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Prior art keywords
themicroelectronicdeviceofclaim
connector
themethodofclaim
resistor
therdam
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French (fr)
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Josef Muenz
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Texas Instruments Inc
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Texas Instruments Inc
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Priority to CN202380031241.XA priority Critical patent/CN118974902A/en
Priority to DE112023002158.9T priority patent/DE112023002158T5/en
Publication of WO2023211756A1 publication Critical patent/WO2023211756A1/en
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G01D5/165—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance by relative movement of a point of contact or actuation and a resistive track
    • G01D5/1655—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance by relative movement of a point of contact or actuation and a resistive track more than one point of contact or actuation on one or more tracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H01C10/46—Arrangements of fixed resistors with intervening connectors, e.g. taps

Definitions

  • Microelectronicdevices areformedinpatternedlayers, suchasdielectriclayers,metal layers, and semiconductor layers,which are patterned using photolithographic processes. Unwanted effects during fabrication ofthe microelectronic devices may cause some ofthe patternedlayerstobemisalignedwithrespecttoeachother.Misalignmentmay degradedevice performanceandreliability.
  • the present disclosure introduces a microelectronic device including a resistive differentialalignmentmonitor(RDAM),including afirstvariable-width resistorand a second variable-width resistor.
  • Thevariable-width resistors aremembersofa conductorlevelofthe microelectronicdevice.
  • TheRDAM furtherincludesavertical connectorcontacting each ofthewide portion ofthe firstvariable-width resistor,the narrow portionofthefirstvariable-widthresistor,thewideportionofthesecondvariable-widthresistor, andthenarrow portionofthesecondvariable-widthresistor.
  • Theverticalconnectors aremembers ofaverticalconnectorlevelofthemicroelectronicdevice. Theverticalconnectorstothefirst variable-width resistor and the verticalconnectorsto the second variable-width resistor are separated by equaldistances. The firstvariable-width resistorand the second variable-width resistorareorientedanti-paralleltoeachother.
  • FIG.1A isaperspectiveview andFIG.IB isatopview ofanexamplemicroelectronic devicethatincludesanRDAM.
  • FIG.2 isatopview ofanexamplefirstresistorandsecondresistorofanRDAM.
  • FIG.3 isatopview ofanotherexampleRDAM includingareferenceresistorpair.
  • FIG.4 isatopview ofanexampleRDAM configuredtoestimatemisalignmentintwo orthogonaldirections.
  • FIG.5 isachartofmeasurementsacquiredusingacalibrationRDAM.
  • FTG.6 isatopview ofanexampleresistorofanRDAM,showingplacementofvertical connectors.
  • FIG.7 isatopview ofanotherexampleresistorofanRDAM,showingplacementof verticalconnectors.
  • FIG.8 isatopview ofafurtherexampleofaresistorofanRDAM,showingplacement ofverticalconnectors.
  • FIG.9 isatopview ofanexampleofanRDAM,showingstretchedverticalconnectors.
  • FIG.10 isatopview ofanexampleofataperedresistorofanRDAM.
  • FIG.11 isatopview ofanexampleofnon-symmetricshapedresistorsofanRDAM.
  • FIG.12A throughFIG.12E arecrosssectionsofamicroelectronicdevicehavingtwo exampleRD AMs,depictedinstagesofanexamplemethodofformation.
  • FIG.13 depictsamicroelectronicdevicehavingtwoexampleRDAMswhich may be usedtoestimatemisalignmentbetweenmembersoftwosuccessiveconductorlevels.
  • FIG.14A throughFIG.14H aretopviewsandcrosssectionsofamicroelectronicdevice withanRDAM forestimatingamisalignmentdistancebetweenviasandinterconnectsofacopper dualdamascenestructure,depictedinstagesofanexamplemethodofformation.
  • FIG.15A throughFIG.15D arecrosssectionsofamicroelectronicdevicethatincludes two additionalexampleRDAMsinvolving aresistorand acapacitor,depicted in stagesofan examplemethodofformation.
  • FIG.16A through FIG.16C are crosssectionsofa microelectronic devicewith an exampleRDAM involvingbondpads,depictedinstagesofanexamplemethodofformation.
  • FIG.17 isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving aburiedlayer.
  • FIG.18 isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving atwo-dimensionalelectrongas(2DEG)inaIII-V semiconductordevice.
  • FIG.19 isatopview ofacrossbridgeteststructureusedtoestimatesheetresistanceand linewidthcorrection.
  • FIG.20 isatopview ofathree-resistorteststructureusedtoestimatesheetresistance andlinewidthcorrection.
  • FIG.21A andFIG.21B aretopviewsofan examplemicroelectronicdeviceincluding RDAMs,depictedinstagesofformation.
  • conductive is to be interpreted as “electrically conductive”.
  • conductive refersto materialsand structurescapableof supportingasteadyelectricalcurrent,thatis,directcurrent(DC).
  • theterms “vertical”and “vertically”refertodirections perpendiculartoafaceofaresistorin aresistivedifferentialalignmentmonitor(RDAM).
  • FTG.1A isaperspectiveview
  • FIG.IB isatopview ofanexamplemicroelectronic device thatincludes an RDAM.
  • the microelectronic device 100 may be manifested asan integratedcircuit,amicroelectricalmechanicalsystem (MEMS)device,anelectro-opticaldevice, oramicrofluidicdevice,by way ofexample.
  • MEMS microelectricalmechanicalsystem
  • TheRDAM 101in cludesafirstvariable-width resistor102,hereinafterthe “firstresistor”andasecondvariable-widthresistor103,hereinafter the “second resistor”,formed in aconductorlevel104.
  • Theconductorlevel104 may be,for example,an interconnectlevel containing aluminum or copper interconnects, a gate level containingpolycrystallinesiliconandmetalsilicidegates,adiffusedlayerlevelinasemiconductor substrate,aresistorlevelin an interconnectregion,a capacitorplate level,abond pad level, redistribution layer(RDL)level,aburied layerlevelin a semiconductorsubstrate,oratwo- dimensionalelectrongas(2DEG)levelinaIILV semiconductormaterial.Othermanifestations oftheconductorlevel104arewithinthescopeofthisdisclosure.
  • the firstresistor 102 and the second resistor 103 have same sublayerswith same compositions,asaresultofbeingformedconcurrently.
  • Thefirstresistor102 hasafirstwideportion 105andafirstnarrow portion 107separate from thefirstwideportion 105.
  • Thesecondresistor103 hasasecondwideportion 109 and a secondnarrow portion 111separatefrom thesecondwideportion 109.
  • TheRDAM 101 includesfirstwideportionverticalconnectors113aand113bcontacting afirstface 114 ofthefirstresistor102 in thefirstwideportion 105.
  • TheRDAM 101further includesafirstnarrow portion verticalconnector115 contacting thefirstface 114 ofthefirst resistor102 in thefirstnarrow portion 107.
  • Thefirstwideportion 105 hasafirstwidth 106 adjacenttothefirstwideportionverticalconnectors113aand 113b,on asideofthefirstwide portionverticalconnectors113aand 113bfacingthefirstnarrow portion 107.
  • Thefirstnarrow portion 107 hasasecondwidth 108adjacenttothefirstnarrow portionverticalconnector115,on asideofthefirstnarrow portionverticalconnector115facingthefirstwideportion105.
  • Thefirst width 106 isgreaterthanthesecondwidth 108.
  • Thefirstwideportion 105 mayhaveauniform width,equalto the firstwidth 106,along its length,as depicted in FIG.IB,which may advantageouslyprovidemoreuniform currentflow inthefirstwideportion 105duringoperation oftheRDAM 101.
  • thefirstnarrow portion 107 mayhaveauniform width,equaltothe secondwidth 108,alongitslength,asdepictedinFIG.IB,which may advantageouslyprovide moreuniform currentflow inthe
  • theRDAM 101in cludessecondwideportionverticalconnectors116aand 116bcontactingasecondface117ofthesecondresistor103inthesecondwideportion 109.
  • the RDAM 101furtherin cludesasecondnarrow portionverticalconnector118contactingthesecond face117ofthesecondresistor103inthesecondnarrow portion 111.
  • Thesecondwideportion 109 hasathirdwidth 110adjacenttothesecondwideportionverticalconnectors116aand 116b, onasideofthesecondwideportionverticalconnectors116aand 116bfacingthesecondnarrow portion 111.
  • Thesecondnarrow portion111 hasafourthwidth112adjacenttothesecondnarrow portionverticalconnector118,onasideofthesecondnarrow portionverticalconnector118facing thesecondwideportion 109.
  • Thethirdwidth 110 isgreaterthanthefourthwidth 112.
  • Thefirstwideportionverticalconnectors113aand113b,thefirstnarrow portionvertical connector115,thesecondwideportionverticalconnectors116aand116b,andthesecondnarrow portionverticalconnector118 aremembersofaverticalconnectorlevel119ofthemicroelectronic device 100, suchasacontactleveltocomponentsofthemicroelectronicdevice100,avialevel betweeninterconnectlevels,abondpadvialevel,anRDLvialevel,adeeptrenchconnectorlevel, orsource/draincontactstoa2DEG levelinaIII-V semiconductormaterial,byway ofexample.
  • Othermanifestationsoftheverticalconnectorlevel119 arewithinthescopeofthisdisclosure. Membersofaverticalconnectorlevel119 areformed concurrently.
  • theRDAM 101 mayincludeonlyasinglefirstwideportionverticalconnectorcontacting thefirstwideportion105andasinglesecondwideportionverticalconnectorcontactingthesecond wideportion 109.
  • theRDAM 101 mayincludethreeormorefirstwideportion verticalconnectorscontactingthefirstwideportion 105andthreeormoresecondwideportion verticalconnectorscontactingthesecondwideportion 109.
  • theRDAM 101 may includetwo ormorefirstnarrow portion verticalconnectorscontacting the firstnarrow portion 107 andtwo ormoresecond narrow portion verticalconnectorscontacting thesecond narrow portion 111.
  • the second wide portion verticalconnectors 116a and 116b are separatedfrom thesecondnarrow portionverticalconnector118byasecondresistorlength 122 thatextendsinaseconddirection 123from thesecondnarrow portionverticalconnector118to thesecondwideportionverticalconnectors116aand 116b.
  • Thefirstresistorlength 120andthe secondresistorlength122 areequal.
  • Themicroelectronicdevice100 includesfirstthroughfourthtestterminals124a,124b, 124c,and 124d,respectively.
  • Thetestterminals124athrough 124d aresometimesreferredtoas probepads,astheRDAM 101maybetestedbyconnectingtestinstrumentstothetestterminals 124athrough 124dby probes.
  • Thefirsttestterminal124a iscoupledtothefirstwideportion verticalconnectors113aand 113b.
  • Thethirdtestterminal124c iscoupledtothesecondwideportion verticalconnectors116aand116b.
  • Thefourthtestterminal124d iscoupledtothesecondnarrow portion verticalconnector118.
  • Thetestterminals124a,124b,124c,and 124d areelectrically conductive,andmaybeinaninterconnectlevelorbondpadlevel,suitableforprobing.
  • Thetest terminals124a,124b,124c,and124d maybedirectlycoupledtotheverticalconnectors113aand 113b,115,116aand 116b,and 118,asdepictedinFIG.1A,ormay becoupledtothevertical connectors 113a and 113b, 115, 116a and 116b,and 118 through intermediate conductive structuressuch asinterconnectsand vias.
  • Thetestterminals 124a,124b,124c,and 124d are omittedfrom FIG.IB inordertoshow theplacementoftheverticalconnectors113aand 113b, 115,116aand 116b,and118moreclearly.
  • TheRDAM 101 enablesestimationofamisalignmentdistancebetweenmembersofthe conductorlevel104andmembersoftheverticalconnectorlevel119.Themisalignmentdistance maybealongthefirstdirection 121ortheseconddirection 123.
  • FIG.2 isatopview ofanexamplefirstresistorandsecondresistorofanRDAM.
  • the firstresistor202 hasafirstwideportion205andafirstnarrow portion207adjacenttothefirst wideportion205.
  • TheRDAM 201 includesfirstwideportionverticalconnectors213aand213b onafirstface214ofthefirstresistor202inthefirstwideportion205,andincludesafirstnarrow portion verticalconnector215 contacting thefirstface214 ofthefirstresistor202 in thefirst narrow portion207.
  • Thesecondresistor203 hasasecondwideportion209andasecondnarrow portion 211adjacentto the secondwideportion 209.
  • TheRDAM 201 includessecond wide portionverticalconnectors216aand216bonasecondface217ofthesecondresistor203inthe secondwideportion209,andincludesasecondnarrow portionverticalconnector218contacting thesecondface217ofthesecondresistor203inthesecondnarrow portion211.
  • Thefirstwideportion205 hasafirstwidth206adjacenttothefirstwideportionvertical connectors213aand213b,onasideofthefirstwideportionverticalconnectors213aand213b facingthefirstnarrow portion207.
  • Thefirstnarrow portion207 hasasecondwidth208adjacent tothefirstnarrow portionverticalconnector215,on asideofthefirstnarrow portionvertical connector215facingthefirstwideportion205.
  • Thefirstwidth206 isgreaterthanthesecond width208.
  • Thesecondwideportion209 hasathirdwidth210adjacenttothesecondwideportion verticalconnectors216aand216b,onasideofthesecondwideportionverticalconnectors216a and216bfacingthesecondnarrow portion211.
  • Thesecondnarrow portion211 hasafourthwidth 212adjacenttothesecondnarrow portionverticalconnector218,onasideofthesecondnarrow portionverticalconnector218facingthesecondwideportion209.
  • Thethirdwidth210 isgreater thanthefourthwidth212.
  • Thefirstresistor202andthesecondresistor203 aredesignedsothatthefirstwidth206 ofthefirstwideportion205isequaltothethirdwidth210ofthesecondwideportion209,and bothhaveavalueWwide,asnotedinFIG.2.
  • thefirstresistor202andthesecondresistor 203 aredesignedsothatthesecondwidth208ofthefirstnarrow portion207isequaltothefourth width212ofthesecondnarrow portion211,andbothhaveavalueWnarr,asnotedinFIG.2.
  • theverticalconnectors213aand213b,215,216aand216b,and218 are misalignedwithrespecttothefirstresistor202andthesecondresistor203.Thatis,locationsof the firstwide portion verticalconnectors213a and 213b,are shifted from firstwide portion nominalpositions225aand225bbyamisalignmentdistanceAxinthexdirection.
  • Thexdirection extendsfrom thefirstwideportionverticalconnectors213aand 213b toward thefirstnarrow portionverticalconnector215,asindicatedbythecoordinatesystem 226.
  • a locationofthefirst narrow portionverticalconnector215 isshiftedfrom afirstnarrow portionnominalposition227 inthexdirectionbythemisalignmentdistanceAx.Locationsofthesecondwideportionvertical connectors216aand216b,areshiftedfrom secondwideportionnominalpositions228aand228b inthexdirectionbythemisalignment
  • Thenominalpositions225aand225b,227,228aand228b,and 229arethepositionstheverticalconnectors213aand213b,215,216aand216b,and218 would haveifnomisalignmenthad occurred.
  • Theverticalconnectors213aand 213b,215,216aand 216b,and218 mayalsobemisalignedintheydirection,asindicatedinFIG.2.
  • TheRDAM 201 enablesestimation ofamisalignmentdistancebetweenmembersofa conductorlevelcontainingthefirstresistor202 andthesecondresistor203 and membersofa verticalconnectorlevelcontainingtheverticalconnectors213a,213b,215,216a,216b,and218.
  • ThefirstresistanceRi mayinclude extraneousresistancecontributionsfrom thefirstwideportionverticalconnectors213aand213b and the first narrow portion vertical connector 215, and may further include resistance contributionsfrom testterminalscoupled to theverticalconnectors213a and 213b and 215.
  • the second resistanceR2 may include extraneousresistance contributionsfrom the secondwideportion verticalconnectors216aand216b andthesecondnarrow portionvertical connector218,andmayfurtherincluderesistancecontributionsfrom testterminalscoupledtothe verticalconnectors216aand216band218.
  • Functionality oftheRD AM 201 may beunderstoodby examining componentsofthe firstresistanceRifrom portionsofthefirstresistor202,andsimilarlyforcomponentsofthesecond resistanceR2from portionsofthesecondresistor203.
  • firstresistor202 afirst componentRiwconnofthefirstresistanceRiisfrom anareaofthefirstwideportion205underand aroundthefirstwideportionverticalconnectors213aand213b.
  • ThefirstcomponentRiwconn is sometimesreferredtoasaheadresistanceatthefirstwideportionverticalconnectors213aand 213b.
  • ThefirstcomponentRiwconn maybeaffectedbythesizeandnumberoffirstwideportion verticalconnectors213aand213bandspacingbetweenthefirstwideportionverticalconnectors 213aand213b.
  • ThesecondcomponentRt ⁇ tde hasavalueofRsheet* (LiwtdeIWwtde), whereRsheetisasheetresistanceofthefirstresistor202andthesecondresistor203.
  • the second componentRivtde may be expressedasRsheet x ((h idenom - A
  • asharptransition,asdepictedinFIG.2 mayproduceathirdcomponent Ritransthatisdifferentfrom aresistorhavingagentle,distributedtransition.
  • Thefirstnarrow lengthLinarr may beexpressed in termsofanarrow nominallength Lnarr.nom.whichisalengthfrom thefirsttransitionregion230tothefirstnarrow portionnominal position227,andthemisalignmentdistanceAx:Linarr ⁇ Lnarr,nom+Ax.Then,thefourthcomponent RinarrmaybeexpressedasRsheet x ((Lnarr,nom + Ax)IWnarr).
  • ThesecondresistanceR2ofthesecondresistor203 maybeexaminedinasimilarmanner, andcomponentsofthesecondresistanceRzmaybeidentified.
  • a firstcomponentRdwconnofthe secondresistanceR2 isfrom anareaofthesecondwideportion209underandaroundthesecond wideportionverticalconnectors216aand216b.
  • Thefirstresistor202andthesecondresistor203 aredesignedtohavesimilarlayouts,reversedfrom eachotheralongthex direction,sothatthe firstcomponentRiwconnofthesecondresistanceR2isequaltothefirstcomponentRIwconnofthe firstresistanceRI,withintolerancesencounteredin fabrication ofthefirstresistor202 andthe secondresistor203.
  • a secondcomponentR2wtdeofthesecondresistanceR2 isfrom anareaofthesecondwide portion 209,extending a second wide length Ldwidefrom the second wide portion vertical connectors216aand216bto asecondtransition region 231ataboundary betweenthesecond wideportion209andthesecondnarrow portion211.
  • ThesecondcomponentR2wide hasavalueof Rsheet x (L2wideI Wwide).
  • Thesecond widelengthL2wide may beexpressed in termsofthewide nominallengthLwide.nom ⁇ whichisalengthfrom thesecondwideportionnominalpositions228a and228btothesecondtransitionregion231,andthemisalignmentdistance ⁇ x:L2wide Lwide.nom + Ax.Then,thesecondcomponentR2widemaybeexpressedasRsheet x ((Lwide.nom +-Ax)IWwide).
  • Thefirstresistor202 andthesecondresistor203 aredesignedtohavetherespectivedistances from the nominalpositions225a and 225b,and 228a and 228b,ofthewide portion vertical connectors213aand213b,and216aand216b,tothetransitionregions230and231,tobothbe equaltoLwide.nom.
  • a thirdcomponentR2transofthesecondresistanceR2 isfrom thesecondtransitionregion 231.
  • Thefirstresistor202andthesecondresistor203 aredesignedtohavetherespectivetransition regions230and231withequalshapes,sothatR2transequalsRltrans.
  • ThefourthcomponentR2narr hasavalueof Rsheet (J,2narrIWnarr).
  • Thesecondnarrow lengthJ ⁇ narrmaybeexpressedintermsofthenarrow nominallengthLnarr.nom which isalength from thesecondtransition region 231tothesecond narrow portion nominalposition229,andthemisalignmentdistance ⁇ x: L2narr ⁇ Lnarr,nom ⁇ x.
  • a fifthcomponentR2NconnofthesecondresistanceR2 isfrom anareaofthesecondnarrow portion211underandaroundthesecondnarrow portionverticalconnector218.
  • Thefirstresistor 202 andthesecondresistor203 aredesignedtohavesimilarlayouts,reversedfrom each other alongthexdirection,sothatthefifthcomponentR2NconnofthesecondresistanceR2isequaltothe fifth componentRINconnofthefirstresistanceRi,withintolerancesencounteredinfabricationof thefirstresistor202andthesecondresistor203.
  • ThesecondresistanceR2 maybeexpressedasasum ofthefivecomponents,intermsof themisalignmentdistanceAx.
  • a difference between the firstresistance Riand the second resistance R2 may be expressedbysubtractingEquation1from Equation2,notingthatR2Wconnequals thatR2Nconn equalsRixconn,andthatR2transequalsRitrans,asexpressedinEquation3.
  • the value of the sheet resistance Rsheet may be obtained from process monitor measurements.
  • Thevaluesofthefirstandthirdwidths206and210ofthewideportions205and 209ofthefirstresistor202andthesecondresistor203 maybeobtainedfrom design data,and may becorrectedusing linewidth monitormeasurements.
  • Thevaluesofthesecond andfourth widths208and212 ofthenarrow portions207and211ofthefirstresistor202 andthesecond resistor203 may be obtained by similarmeans.
  • themisalignmentdistanceAx may be estimated in absoluteunitsusing Equation 4,which may advantageously beused to monitor misalignment.
  • Misalignmentvalues may beusedtocorrectphotolithography processesusedin forming conductorlevelscorrespondingtotheconductorlevelcontainingtheresistors202 and 203,ormay beusedto correctphotolithography processesused in forming verticalconnector levelscorrespondingtotheverticalconnectorlevelcontainingtheverticalconnectors213a,213b, 215,216a,216b,and218.
  • FIG.3 isatopview ofanotherexampleRDAM includingareferenceresistorpair.
  • the RDAM 301 includesafirstresistor302,asecondresistor303andareferenceresistorpair332.
  • Thefirstresistor302andthesecondresistor303 havethepropertiesdisclosedinreferencetoany oftheexamplesherein,includingwideportionsandnarrow portions.
  • Thereferenceresistorpair 332 includesafirstduplicateresistor302aandasecondduplicateresistor303a.
  • Thefirstresistor 302andthefirstduplicateresistor302a haveequaldimensionsandasamefirstorientation.
  • the second resistor303 and the second duplicateresistor303a haveequaldimensionsand a same secondorientation,anti-paralleltothefirstorientation.
  • TheRD AM 301 furtherincludesvertical connectors313onthewideportionsandthenarrow portionsofthefirstresistor302,thesecond resistor303,thefirstduplicateresistor302a,andthesecondduplicateresistor303a,asdisclosed inreferencetotheRD AM 101ofFIG.1A andFI
  • Thefirstduplicateresistor302aandthesecondduplicateresistor303a may be coupled in seriesthrough theverticalconnectors313 on the narrow portionsofthe duplicateresistors302aand303a,asdepictedinFIG.3.
  • thefirstduplicateresistor 302a and the second duplicate resistor303a may be coupled in seriesthrough the vertical connectors313onthewideportionsoftheduplicateresistors302aand303a.
  • thefirstduplicateresistor302aandthesecondduplicateresistor303a may be coupledfrom wideportiontonarrow portion.
  • theconductivelink333 maybelocatedinasameconductivelevelasthe testterminals324andtheadditionaltestterminals324a.
  • Thereferenceresistorpair332 may enableaquantitativecheckontheestimateofthe misalignmentdistanceAx,disclosedinreferencetoFIG.2.
  • TheresistanceRrefofthereference resistorpair332 isexpectedtobeequaltothesum oftheresistancesofthefirstresistor302and thesecondresistor303,Ri+ R2,duetothefirstduplicateresistor302aandthesecondduplicate resistor303ahaving equaldimensionsand orientationstothefirstresistor302 andthesecond resistor303.
  • Anydifferencebetweentheresistanceofthereferenceresistorpair332andthesum oftheresistancesofthefirstresistor302andthesecondresistor303,thatis ⁇ Rref-(Ri+R2) ⁇ may beattributedtounwantedvariationsinfeaturesofthereferenceresistorpair332,thefirstresistor 302,andthesecondresistor303,causingextraneous
  • instancesoftheRDAM 301 which the magnitudeofthedifferencebetweentheresistanceofthereferenceresistorpair332andthesum ofthe resistances ofthe firstresistor302 and the second resistor303 iscomparable to the magnitudeofthedifferenceoftheresistancesofthefirstresistor302andthesecondresistor303, thatis, ⁇ Rref- (Ri+ R2) ⁇ > ⁇ Ri-R? ⁇ ,mayindicatetheestimateofthemisalignmentdistanceAxis undependable.
  • FIG.4 isatopview ofanexampleRDAM configuredtoestimatemisalignmentintwo orthogonaldirections.
  • TheRDAM 401 includesafirsthorizontalresistorchain 434with first horizontalresistors402a and a second horizontalresistor chain 435 with second horizontal resistors403a.
  • Thefirsthorizontalresistors402aandthesecondhorizontalresistors403a have thepropertiesdisclosedinreferencetoany oftheexamplesherein,includingwideportionsand narrow portions.
  • the firsthorizontalresistors402a are duplicatesofeach other.
  • Thefirsthorizontal resistors402a areconnectedseriallythroughconductivelinks433,wideportiontonarrow portion, throughverticalconnectors413onthewideportionsandthenarrow portionsofthefirsthorizontal resistors402a.
  • Thefirsthorizontalresistors402aareallorientedhorizontally,thatis,thevertical connectors413onthewideportionsoneachfirsthorizontalresistor402a areseparatedfrom the verticalconnectors413onthenarrow portionsalongafirsthorizontaldirection.Instancesofthe firsthorizontalresistors402aatendsofthefirsthorizontalresistorchain434arecoupledtotest terminals424.
  • Thefirsthorizontalresistorchain434andthesecondhorizontalresistorchain435 may beusedto estimateahorizontalmisalignmentdistancebetween membersofaconductorlevel containingthefirsthorizontalresistors402aandthesecondhorizontalresistors403aandmembers ofa verticalconnectorlevelcontaining theverticalconnectors413.
  • a second horizontal chain resistance,R2chain,horiz may be measured using the test terminals424coupledtothesecondhorizontalresistorchain435.
  • Anaveragesecondhorizontal resistance,R2avg,horiz,ofthe second horizontalresistors403a may be obtained by dividing the second horizontalchain resistance,R2chain.horiz,by thenumber,N2horiz,ofthe second horizontal resistors403ainthesecondhorizontalresistorchain435,asexpressedinEquation6.
  • the average firsthorizontalresistance,Riav g ,horiz,and the average second horizontal resistance,R2av g ,horiz, maythenbesubtractedtoestimatethehorizontalmisalignmentdistance,as disclosedinreferencetoFIG.2.
  • Thefirsthorizontalresistorchain434andthesecondhorizontal resistorchain435 may includeasufficientnumberofthefirsthorizontalresistors402aandthe second horizontalresistors403a,respectively,to provide valuesofthe firsthorizontalchain resistance,Richain.horiz,andthesecondhorizontalchainresistance,R2chain,horiz,thataremoreeasily measuredthan singleresistors.
  • TheRDAM 401 includesafirstverticalresistorchain 436with firstverticalresistors 402bandasecondverticalresistorchain437withsecondverticalresistors403b.
  • Thefirstvertical resistors402bandthesecondverticalresistors403b havethepropertiesdisclosedinreferenceto any ofthe examplesherein,including wide portionsand narrow portions.
  • the firstverticalresistors402b andthesecondverticalresistors403b maybeduplicatesofthefirst horizontalresistors402aandthesecondhorizontalresistors403a.
  • Thesecondverticalresistors403b aresimilarly connected serially through the conductivelinks433throughverticalconnectors413,andcoupledtotestterminals424.
  • Thefirstverticalresistorchain 436 andthesecondverticalresistorchain 437 may be usedtoestimateaverticalmisalignmentdistance,followingtheproceduredisclosedforestimating thehorizontalmisalignmentdistance.
  • usingthefirstverticalresistorchain436andthesecond verticalresistorchain437,eachhavingmultipleinstancesofthefirstverticalresistors402b and thesecondverticalresistors403b mayprovidetheadvantagesdisclosedinreference tothefirsthorizontalresistorchain434andthesecondhorizontalresistorchain435.
  • FIG.5 isachartofmeasurementsacquiredusingacalibrationRDAM.
  • Thecalibration RDAM notshown,includesafirstresistorchainoffirstresistorsandasecondresistorchainof secondresistors,andverticalconnectors,similartotheresistorchains434and435ofFIG.4.
  • theverticalconnectors haveanominallengthandwidth,parallel toaplaneoftheresistors,of300nanometers.
  • ThecalibrationRDAM furtherincludesadditional pairsofresistorchainsinwhichtheverticalconnectorswereintentionally displacedinpositive andnegativeincrementsof25nanometers.Theresistorswereformedinathinfilm resistorlayer, andtheverticalconnectorswereformedinavialevel.Eachpairofresistorchainswasmeasured, andthecorrespondingmisalignmentdistancewasestimated.Theestimateddisp
  • the estimateddisplacements haveacorrelationR 2 of0.989tothecalibrateddisplacements.Deviations of the estimated displacements from the trendline are attributed to geometry errors in the photomaskusedtoform theverticalconnectors,aswellasvariationsencounteredindepositionof thethinfdm level,patterningtheresistors,andetchingviaholesfortheverticalconnectors.
  • the data shown in thechartofFIG.5indicatestheRDAM iscapableofestimating misalignment distancesforviasonthinfdm resistorlayerswithin6nanometersto7nanometers,significantly lessthanthealloweddisplacementtoleranceof100nanometers.
  • FIG.6 isatopview ofanexampleresistorofanRDAM,showingplacementofvertical connectors.
  • TheRDAM 601 includesafirstresistor602,andasecondresistor,notshowninFIG.
  • Thefirstresistor602 includesawideportion 605andanarrow portion607adjacenttothewideportion605.Inthisexample,thewideportion 605extendspastthenarrow portion607byafirstwidthincrement638aonafirstsideofthefirst resistor602,andbyasecondwidthincrement638bonasecondsideofthefirstresistor602. The firstwidthincrement638aandthesecondwidthincrement638bmaybeequal.
  • TheRDAM 601 ofthisexample includesawideportionverticalconnector613onaface614ofthefirstresistor 602inthewideportion605,andincludesanarrow portionverticalconnector615contactingthe face614ofthefirstresistor602inthenarrow portion607.
  • Thewideportionverticalconnector 613 isseparated from thenarrow portion verticalconnector615by aresistorlength 620 that extendsina
  • Thewideportionverticalconnector613 hasafirstinlinedimension639aparalleltothe firstdirection621andafirsttransversedimension639bperpendiculartothefirstdirection621.
  • Thefirstinlinedimension639aandthefirsttransversedimension639barelateraldimensionsof thewide portion verticalconnector613,thatis,the firstinline dimension 639a and thefirst transversedimension 639b areparalleltotheface614,andaretaken attheface614.
  • Thenarrow portionverticalconnector615 hasasecondinlinedimension640aparallel to the firstdirection 621 and a second transverse dimension 640b perpendicularto the first direction621.
  • Thesecondinlinedimension640aandthesecondtransversedimension640b are lateraldimensions,taken attheface614.
  • the second inline dimension 640a and the second transversedimension640b maybeequal,asdepictedinFIG.6,ormaybeunequal.
  • Thesecond inlinedimension640aandthesecondtransversedimension640b maybeequaltothefirstinline dimension639aandthefirsttransversedimension639b,ormaybedifferent.
  • Theverticalconnectors613and615 mayhaveroundedcomersorroundedshapes,due toimagedeformationinaphotolithographyprocessusedtoform theverticalconnectors613and 615.
  • Theinlinedimensions639aand 640a aretaken asmaximum dimensionsofthevertical connectors613and615,respectively,paralleltothefirstdirection621.
  • Thetransversedimensions 639b and 640b are taken asmaximum dimensions ofthe verticalconnectors 613 and 615, respectively,perpendiculartothefirstdirection621.
  • thefirstresistor602 extendspastthewideportionverticalconnector613tothefirstsideofthe firstresistor602byafirstwidthextension641a
  • Theextensions641a,641b,and 641c may be equal,ormaybedifferent.
  • the extensions642a,642b,and642cmaybeequal,ormaybedifferent.Thewidthextensions641a, 641b,642a,and642b mayadvantageouslybelargerthananexpectedmisalignmentofthevertical connectors613and615perpendiculartothefirstdirection621.
  • the firstresistor602 may be formed so thatthe length extensions641cand642careatleastaslargeastheminimum verticalconnectiondimension.
  • a firstcomponent isfrom an areaofthewideportion 605underandaroundthewide portionverticalconnector613.Asnotedabove,performanceoftheRD AM 601maybeenhanced when thefirstresistor602extendspastthewideportionverticalconnector613onallsides.
  • Thewidelength 643 correspondstothefirst widelengthLiwideofFIG.2.
  • PerformanceoftheRDAM 601 mayfurtherbeenhancedbyforming thefirstresistor602sothatthewidelength643is2to5timestheminimum verticalconnection dimension. Ifthewidelength643islessthan2timestheminimum verticalconnectiondimension, theRD AM 601mayprovideanerroneousestimateofthemisalignmentdistanceduetoreduced linearityintherelationshipbetweenthemisalignmentdistanceandthedifferenceinresistancesof thefirstresistor602 andthesecondresistor.
  • a thirdcomponentofthefirstresistance isfrom thetransitionregion630.
  • Thetransition region630 correspondstochangesincurrentdensitybetweenthewideportion605andthenarrow portion607.
  • a transitionwidth644ofthetransitionregion630 maybetakenastwiceamaximum ofthefirstwidthincrement638aandthesecondwidthincrement638b.
  • Thenarrow length 645 correspondstothefirstnarrow lengthLinarrofFIG.2.
  • performanceoftheRDAM 601 may furtherbeenhancedbyformingthefirst resistor602 so thatthe narrow length 645 is2 to 5 timesthe minimum verticalconnection dimension.
  • the firstresistor602 mayhavearectilinearprofileinthetransitionregion 630betweenthewideportion605andthenarrow portion607,inwhichanedgeofthefirstresistor
  • 602 hasastraightsegmentatthetransitionfrom thewideportion605tothenarrow portion607, oneachsideofthefirstresistor602;thestraightsegmentsareorientedatrightanglestotheedges ofthefirstresistor602inthewideportion605andthenarrow portion607.
  • Therectilinearprofile mayadvantageouslyfacilitateautomatedlayoutoftheRDAM 601.
  • FIG.7 isatopview ofanotherexampleresistorofanRDAM,showingplacementof verticalconnectors.
  • TheRDAM 701 includesafirstresistor702,andasecondresistor,notshown inFIG.7.
  • Thefirstresistor702 includesawideportion705andanarrow portion707adjacentto thewideportion705.
  • TheRDAM 701ofthisexample includestwowideportionverticalconnectors713aand 713b,arrangedacrossawidthofthefirstresistor702inthewideportion705.
  • Thewideportion verticalconnectors713aand713b contactaface714ofthefirstresistor702.
  • Thetwowideportion verticalconnectors713aand713b mayprovideamoreconsistentresistanceofthefirstresistor 702,whichmayadvantageouslyprovideamoreaccurateestimateofamisalignmentdistanceby theRDAM 701.
  • the wide portion 705 has a firstwidth 706 adjacentto the wide portion vertical connectors713aand713b,onasideofthewideportionverticalconnectors713aand713bfacing thenarrow portion707.
  • Thenarrow portion707 hasasecondwidth708adjacenttothenarrow portionverticalconnector715,onasideofthenarrow portionverticalconnector715facingthe wideportion705.
  • Thefirstwidth706 isgreaterthanthesecondwidth708.
  • TheRDAM 701ofthisexample includesasinglenarrow portionverticalconnector715 contacting theface 714 ofthefirstresistor702in thenarrow portion 707.
  • Thesinglenarrow portionverticalconnector715 may enableaminimum width ofthefirstresistor702,consistent withthefirstresistor702 extendingpastthenarrow portionverticalconnector715on allsides, whichmayadvantageouslyreduceatotalareaoftheRDAM 701.
  • thefirstresistor702 mayhaveaslopededgeprofileinatransitionregion 730betweenthewideportion705andthenarrow portion707.
  • Theslopedprofile mayprovide more consistentpatternsby a photolithographic processused to form the firstresistor 702, advantageouslyprovidingmoreaccurateestimatesofmisalignmentdistancesbytheinstancesof theRDAM 701.
  • FIG.8 isatopview ofafurtherexampleofaresistorofanRDAM,showingplacement ofverticalconnectors.
  • TheRDAM 801 includesafirstresistor802,andasecondresistor,not shown inFIG.8.
  • Thefirstresistor802 includesawideportion 805and anarrow portion 807 adjacenttothewideportion805.
  • TheRDAM 801ofthisexample includesafirstwideportionverticalconnector813aand asecondwideportionverticalconnector813b,contactingaface814ofthefirstresistor802.
  • the firstwideportionverticalconnector813aandthesecondwideportionverticalconnector813 bare arrangedalongadirectionofcurrentflow ofthefirstresistor802inthewideportion 805.
  • the RD AM 801ofthisexamplein cludesafirstnarrow portionverticalconnector815aandasecond narrow portionverticalconnector815b,contactingtheface814.
  • Thefirstnarrow portionvertical connector815a and the second narrow portion verticalconnector815b are arranged along a directionofcurrentflow ofthefirstresistor802inthenarrow portion807.
  • Thewideportion 805 hasafirstwidth806adjacenttothesecondwideportionvertical connector813b,on asideofthesecondwideportionverticalconnector813b facingthenarrow portion807.
  • Thenarrow portion807 hasasecondwidth808adjacenttothesecondnarrow portion verticalconnector815b,onasideofthesecondnarrow portionverticalconnector815bfacingthe wideportion805.
  • Thefirstwidth806 isgreaterthanthesecondwidth808.
  • thefirstwideportionverticalconnector813aand thefirstnarrow portionverticalconnector815a maybeconnectedtoacurrentsource846,sothat currentflowsthroughthefirstresistor802from thefirstnarrow portionverticalconnector815ato thefirstwideportionverticalconnector813a,asindicatedinFIG.8,orviceversa.
  • Thesecond wideportionverticalconnector813bandthesecondnarrow portionverticalconnector815b may beconnectedtoanelectricpotentialmeasurementcomponent847, suchasavoltmeterorsourcemeasurementunit(SMU).
  • the electric potentialmeasurement component 847 provides a measurementofthepotentialacrossthefirstresistor802from thesecondnarrow portionvertical connector815btothesecondwideportionverticalconnector813bproducedbythecurrentfrom the currentsource 846.
  • the resistance ofthe firstresistor802 isestimated by dividing the measurementofthe potentialfrom the electricpotentialmeasurementcomponent847 by the currentfrom thecurrentsource846.
  • ThemeasurementtechniqueofFIG.8 mayadvantageously reduceunwanted extraneousresistancecontributionsfrom testterminalsand probeequipment, advantageouslyprovidingamoreaccurateestimateofamisalignmentdistancebytheRDAM 801.
  • ThemeasurementtechniqueofFIG.8 iscommonlyreferredtoasakelvinmeasurement.
  • thefirstresistor802 mayhaveacurvededgeprofileinatransitionregion 830betweenthewideportion 805andthenarrow portion 807.
  • Thecurvedprofile mayprovide evenmoreconsistentpatternsby aphotolithographicprocessusedtoform thefirstresistor802, comparedtorectilinearordiagonalprofileswith sharp corners,advantageously providingmore accurateestimatesofmisalignmentdistancesbytheinstancesoftheRDAM 801.
  • FIG.9 isatopview ofanexampleofanRD AM,showingstretchedverticalconnectors.
  • TheRDAM 901 includesafirstresistor902,andasecondresistor,notshowninFIG.9.
  • Thefirst resistor902 includesawideportion 905and anarrow portion907 adjacenttothewideportion 905.
  • TheRDAM 901ofthisexample includesawideportionverticalconnector913onaface
  • Thewideportion905 hasafirstwidth906adjacenttothewideportionverticalconnector 913,on asideofthewideportion verticalconnector913 facing thenarrow portion 907.
  • the narrow portion907 hasasecondwidth908adjacenttothenarrow portionverticalconnector915, onasideofthenarrow portionverticalconnector915facingthewideportion905.
  • Thefirstwidth 906 isgreaterthanthesecondwidth908.
  • thefirstresistor902 may have astepped edgeprofilein atransition region930betweenthewideportion905andthenarrow portion 907.
  • Thesteppedprofile may providemoreprocesslatitudeforaphotolithographicprocessusedtoform thefirstresistor902, comparedtorectilinearprofileswithsharpcorners,whilebeingcompatiblewithdesignrulesthat donotallow diagonaledges.
  • FIG.10 isatopview ofanexampleofataperedresistorofanRDAM.
  • TheRDAM 1001 includesafirstresistor1002,andasecondresistor,notshowninFIG.10.
  • Thefirstresistor1002 hasatapered shape,with awideportion 1005and anarrow portion 1007 adjacenttothewide portion 1005.
  • the RDAM 1001 ofthisexample includeswide portion verticalconnectors 1013a, 1013b,and 1013conaface1014ofthefirstresistor1002inthewideportion 1005,andincludes narrow portionverticalconnectors1015aand 1015bcontactingtheface1014ofthefirstresistor 1002inthenarrow portion 1007.
  • Thewideportion 1005 hasafirstwidth 1006adjacenttothe wideportionverticalconnectors1013a,1013b,and 1013c,onasideofthewideportionvertical connectors1013a,1013b,and 1013cfacingthenarrow portion 1007.
  • Thenarrow portion 1007 hasasecondwidth 1008adjacenttothenarrow portionverticalconnectors1015aand 1015b,on asideofthenarrow portionverticalconnectors1015aand 1015b facingthewideportion 1005.
  • Thefirstwidth 1006 isgreaterthanthesecondwidth 1008.
  • thewideportion1005andthenarrow portion1007 maybetakentomeet atamidpointbetween thewideportion verticalconnectors 1013a,1013b,and 1013cand the narrow portionverticalconnectors1015aand1015b.
  • Thewideportion1005 hasafirstwidth1006 adjacenttothewideportionverticalconnectors1013athrough1013c,onasideofthewideportion verticalconnectors1013athrough 1013cfacing thenarrow portion 1007.
  • Thenarrow portion 1007 hasasecondwidth1008adjacenttothenarrow portionverticalconnectors1015aand1015b, onasideofthenarrow portionverticalconnectors1015aand1015bfacingthewideportion1005.
  • Thefirstwidth 1006 isgreaterthanthesecondwidth 1008 [0102]
  • Thetaperedshapeoffirstresistor1002 mayprovide moreuniform currentdensity between thewideportion verticalconnectors1013a,1013b,and 1013candthenarrow portionverticalconnectors1015aand 1015b,whichmay advantageously provide a more accurate estimate ofthe misalignmentdistance,compared to resistorshaving abrupttransitionsbetweentheirwideportionsandnarrow portions.
  • Themultiplewideportion verticalconnectors1013a,1013b,and 1013c may provide moreuniform currentdensityinthewideportion 1005,andthemultiplenarrow portionvertical connectors1015aand 1015b may providemoreuniform currentdensity in thenarrow portion 1007,furtherimprovingtheaccuracyofthemisalignmentdistanceestimate.
  • FIG.11 isatopview ofan exampleofnon-symmetricshapedresistorsofanRDAM.
  • TheRDAM 1101 includesafirstresistor1102andasecondresistor1103.A firstface1114of thefirstresistor1102iscoplanarwithasecondface1117ofthesecondresistor1103.
  • Thefirst resistor1102 hasafirstwideportion 1105and afirstnarrow portion 1107 adjacenttothefirst wideportion1105.
  • Thefirstresistor1102ofthisexample hasastraightside1148aandastaggered side1148boppositefrom thestraightside1148a.
  • Thestaggeredside1148b mayhavearectilinear form,composed ofstraightedgesmeeting atrightangles,asdepicted in FIG.11,may havea polygonalform,composed ofstraightedgesmeeting atacuteandobtuseangles,ormay havea curvilinearform,composedofstraightandcurvededges.Thus
  • TheRD AM 1101ofthisexample includestwo firstwideportion verticalconnectors 1113aand 1113b,arrangedacrossawidthofthefirstresistor1102inthefirstwideportion 1105.
  • Thefirstwideportionverticalconnectors1113aand 1113b contactthefirstface1114ofthefirst resistor1102.
  • TheRDAM 1101ofthisexample includesasinglefirstnarrow portionvertical connector1115contactingthefirstface1114ofthefirstresistor1102inthefirstnarrow portion 1107.
  • Thefirstwideportionverticalconnectors1113aand 1113b haveafirstinlinedimension 1139aalongafirstdirection1121thatpointsfrom thefirstnarrow portionverticalconnector1115 to thefirstwideportion verticalconnectors1113aand 1113b.
  • Thefirstwideportionvertical connectors1113aand 1113b haveafirsttransversedimension 1139b perpendiculartothefirst direction 1121.
  • Thefirstnarrow portionverticalconnector1115 hasasecondinlinedimension 1140aalongthefirstdirection1121andasecondtransversedimension1140bperpendiculartothe firstdirection 1121.
  • the firsttransverse dimension 1139b and the second transversedimension 1140b maybeequal,andmaybedeterminedbyfabricationguidelinesfora verticalconnectorlevelofwhichthefirstwideportionverticalconnectors1113aand 1113band thefirstnarrow portionverticalconnector1115aremembers.
  • Thesecondinlinedimension1140a maybegreaterthanthefirstinlinedimension 1139a,toprovideaclosermatchbetween ahead resistanceatthefirstnarrow portionverticalconnector1115andaheadresistanceatthefirstwide portionverticalconnectors1113aand 1113b.
  • Theconfigurationofthefirstwideportionvertical connectors 1113a and 1113b and the firstnarrow portion verticalconnector 1115 may be particularlyadvantageousforinstancesofthefirstresistor1102havingasheetresistancelessthan 0.10ohms/square.
  • Thefirstwideportion 1105 hasafirstwidth 1106 adjacentto thefirstwideportion verticalconnectors1113aand1113b,onasideofthefirstwideportionverticalconnectors1113a and1113bfacingthefirstnarrow portion 1107.
  • Thefirstnarrow portion 1107 hasasecondwidth 1108adjacenttothefirstnarrow portion verticalconnector1115,on asideofthefirstnarrow portionverticalconnector1115facingthefirstwideportion1105.
  • Thefirstwidth 1106 isgreater thanthesecondwidth 1108.
  • Thesecondresistor1103 isaduplicateofthefirstresistor1102having asecondwide portion 1109 and asecond narrow portion 1111adjacentto,and offsetfrom,thesecondwide portion 1109.
  • Thesecondresistor1103 hasthesamenon-symmetricshapeasthefirstresistor 1102,reversedindirection.
  • TheRDAM 1101ofthisexample includestwosecondwideportion verticalconnectors1116aand 1116bcontactingthesecondface1117inthesecondwideportion 1109,andasinglesecondnarrow portionverticalconnector1118contactingthesecondface1117 inthesecondnarrow portion1111.
  • Thesecondwideportionverticalconnectors1116aand1116b havethesamedimensionsasthefirstwideportionverticalconnectors1113aand 1113b,andthe secondnarrow portionverticalconnector1118hasthesamedimensionsasthefirstnarrow portion verticalconnector1115.
  • the secondwideportion 1109 hasathirdwidth 1110,equalto thefirstwidth 1106, adjacenttothesecondwideportionverticalconnectors1116aand 1116b,onasideofthesecond wideportionverticalconnectors1116aand 1116bfacingthesecondnarrow portion 1111.
  • the secondnarrow portion 1111 hasafourthwidth 1112,equaltothesecondwidth 1108,adjacentto thesecondnarrow portionverticalconnector1118,onasideofthesecondnarrow portionvertical connector1118facingthesecondwideportion 1109.
  • Thesecondresistor1103 isreversedin directionfrom thefirstresistor1102,thatis,a seconddirection 1123thatpointsfrom thesecondnarrow portionverticalconnector1118tothe secondwideportionverticalconnectors1116aand1116bisanti-paralleltothefirstdirection1121.
  • Thenon-symmetricshapesofthefirstresistor1102 andthesecondresistor1103 may enablea morecompactlayoutoftheRDAM 1101comparedtoresistorhavingsymmetricshapes.
  • FIG.12A throughFIG.12E arecrosssectionsofamicroelectronicdevicehavingtwo exampleRDAMs,depictedinstagesofanexamplemethodofformation.ReferringtoFIG.12A, themicroelectronicdevice 1200maybemanifested asany ofthemicroelectronicdevicetypes disclosed in reference to the microelectronic device 100 of FIG.1A and FIG.IB.
  • Thesubstrate 1249 includesafirstareaforafirstRD AM 1201aandasecondareaforasecondRD AM 1201b.
  • Thesubstrate 1249 includeasemiconductormaterial1250having afirstconductivity type.Inthisexample,thefirstconductivitytypemaybep-type,asindicatedinFIG.12A.A field reliefdielectriclayer1251,commonlyreferredtoasfieldoxide,isformedinandonthesubstrate 1249.
  • Thefieldreliefdielectriclayer1251 may beformedby ashallow trenchisolation (STI) processandhavean STIstructureinwhichthefieldreliefdielectriclayer1251isinatrenchin thesemiconductormaterial1250,asdepictedinFIG.12A.
  • STI ashallow trenchisolation
  • thefieldreliefdielectric layer1251 maybeformedby alocaloxidationofsilicon(LOCOS)processandhaveaLOCOS structure,in which thefield reliefdielectriclayer1251would havetapered edges,and extend partway into the semiconductormaterial 1250 and extend partway above the semiconductor material1250.
  • ThefirstareaforthefirstRD AM 1201a isfreeofthefieldreliefdielectriclayer1251in an areaforafirstresistor1202aandanareaforasecondresistor,notshown.
  • Thediffusedlayer1252 isamember ofadiffusedlayerlevelwhichmayhaveanaveragedopantdensityof1x 10 18 atoms/cm 3 to 1x IO 20 atoms/cm 3 ,bywayofexample.Thediffusedlayer1252mayhaveadepthlessthan1micron.
  • the diffused layerlevel may provide source/drain contactregionsforn-channelmetaloxide semiconductor(NMOS)transistorsand contactregionsforn-typewellsin themicroelectronic device1200.
  • NMOS metal-oxide semiconductor
  • InthefirstareaforthefirstRDAM 1201a,thediffusedlayer1252 providesaportion ofthefirstresistor1202aandaportionofthesecondresistor.
  • Thefieldreliefdielectriclayer1251 may extendoverthesemiconductormaterial1250 inthesecondareaforthesecondRDAM 1201b,asdepictedinFIG.12A.
  • thesecond areaforthesecondRD AM 1201b maybefreeofthefieldreliefdielectriclayer1251.
  • agatelayer1253 isformedoverthesubstrate1249andthefield reliefdielectriclayer1251.
  • Thegatelayer1253 isamemberofagatelevelwhosemembersmay providegatesforNMOStransistorsorp-channelmetaloxidesemiconductor(PMOS)transistors inthemicroelectronicdevice1200.
  • Thegatelevel mayprovideresistorsorcapacitorplatesinthe microelectronicdevice1200.
  • Thegatelayer1253 mayincludepolycrystallinesilicon,commonly referredtoaspolysilicon.
  • thegatelayer1253 mayincludetitanium nitride,tantalum nitride,fully silicidedpolysilicon (FUSI),orotherconductivematerial.
  • Sidewallspacers1254 maybeformedonlateralsurfacesofthegatelayer1253.
  • Thesidewallspacers1254 mayinclude siliconnitride,silicondioxide,orsiliconoxynitride,bywayofexample
  • thefirstareaforthefirstRDAM 1201a isfreeofthegatelayer1253.
  • thegatelayer1253 providesaportion of athird resistor1202bandafourthresistor,notshown.
  • Thethirdresistor1202b andthefourthresistor arepartsofthesecondRDAM 1201b.
  • a metalsilicide layer 1255 isformed on exposed silicon ofthe substrate 1249 and exposedpolysiliconinthegatelayer1253.
  • Themetalsilicidelayer1255 may includetitanium silicide,cobaltsilicide,ornickelsilicide,bywayofexample.
  • Themetalsilicidelayer1255 may beformedbyformingalayerofmetalonthemicroelectronicdevice1200,contactingtheexposed siliconandpolysilicon.Subsequently,thelayerofmetalisheatedtoreactthelayerofmetalwith theexposed silicon and polysilicon to form themetalsilicidelayer1255. Unreacted metalis removedfrom themicroelectronicdevice1200,leavingthemetalsilicidelayer1255inplace.
  • the metalsilicide layer 1255 may provide electricalconnectionsto the gate layer 1253 and the substrate1249.
  • themetalsilicidelayer1255onthediffused layer1252 providesanotherportionofthefirstresistor1202aandanotherportionofthesecond resistor.
  • themetalsilicidelayer1255onthegate layer1253 providesanotherportionofthethirdresistor1202bandanotherportionofthefourth resistor.
  • Thefirstresistor1202a includesafirstwideportion 1205aand afirstnarrow portion 1207a,accordingtoanyoftheexamplesdisclosedinreferencetoFIG.1A andFIG.IB,FIG.2, andFIG.6throughFIG.11.
  • Thesecondresistorisaduplicateofthefirstresistor1202a having asecondwideportionandasecondnarrow portion,reversedindirection.
  • Thethirdresistor1202b includesathirdwideportion 1205b and athirdnarrow portion 1207b,accordingto any ofthe examplesdisclosedinreferencetoFIG.1A andFIG.IB,FIG.2,andFIG.6throughFIG.11.
  • the fourthresistorisaduplicateofthethirdresistor1202b havingafourthwideportionandafourth narrow portion,reversedindirection.
  • a pre-metaldielectric (PMD)layer 1256 isformed overthe existinglayersofthemicroelectronicdevice1200,coveringthemetalsilicidelayer1255andthe fieldreliefdielectriclayer1251.
  • ThePMD layer1256 iselectricallynon-conductive,andmay includeoneormoresublayersofdielectricmaterial.Byway ofexample,thePMD layer1256 mayincludeaPMD liner,notspecifically shown,ofsiliconnitride,contactingthemetalsilicide layer1255andthefield reliefdielectriclayer1251.
  • ThePMD layer1256 may alsoinclude a planarized layerofsilicon dioxide-based dielectricmaterial,notspecifically shown,ofsilicon dioxide,phosphosilicateglass(PSG),fluorinatedsilicateglass(FSG),orborophosphosilicateglass (BPSG),on thePMD liner.
  • ThePMD layer1256 may furtherincludeaPMD cap layer,not specifically shown,ofsilicon nitride,silicon carbide,orsilicon carbonitride,on theplanarized layer.OtherlayerstructuresandcompositionsforthePMD layer1256arewithinthescopeofthis example.
  • Averticalconnectorlevel1219 isformedinthePMD layer1256.
  • Theverticalconnector level1219 includesafirstwideportionverticalconnector1213aofthefirstRDAM 1201aonthe firstresistor1202ainthefirstwideportion 1205a,andafirstnarrow portionverticalconnector 1215aonthefirstresistor1202ainthefirstnarrow portion 1207a.
  • Thefirstwideportionvertical connector1213aandthefirstnarrow portionverticalconnector1215a areconductiveandextend throughthePMD layer1256tomakeelectricalconnectionstothefirstresistor1202a.
  • Thevertical connectorlevel1219 alsoincludessecondwideandnarrow verticalconnectors,notshown,tothe secondresistor.
  • Theverticalconnectorlevel1219 alsoincludes fourth wide and narrow verticalconnectors,notshown,to the fourth resistor.
  • the vertical connectorlevel1219 also includesotherverticalconnectors,notshown,thatprovideelectrical connectionstocomponentssuchasNMOStransistorsandPMOStransistorsofthemicroelectronic device1200.
  • the verticalconnectors ofthe verticalconnectorlevel 1219 may include a liner/barrieroftitanium andtitanium nitrideandacoremetaloftungsten,asindicatedinFIG.12C.
  • afirstinterconnectlevel1258 isformedonthePMD layer1256 andtheverticalconnectorlevel1219.
  • Thefirstinterconnectlevel1258 includesafirsttestterminal 1224aconnectedtothefirstwideportionverticalconnector1213aofthefirstRD AM 1201aand asecondtestterminal1224bconnectedtothefirstnarrow portionverticalconnector1215aofthe firstRDAM 1201a.
  • Thefirstinterconnectlevel1258 alsoincludesthirdandfourthtestterminals connected to theverticalconnectorson the second resistor.
  • Thefirstinterconnectlevel1258 furtherincludesafifthtestterminal1224cconnectedtothethirdwideportionverticalconnector 1213bofthesecondRDAM 1201bandasixthtestterminal1224dconnectedtothethirdnarrow portionverticalconnector1215bofthesecondRDAM 1201b.
  • Thefirstinterconnectlevel1258 alsoincludesseventhandeighthtestterminalsconnectedtotheverticalconnectorsonthefourth resistor.Formingthetestterminals1224athrough1224dandthetestterminalsonthesecondand fourthresistorsenablesthefirstRDAM 1201aandthesecondRDAM 1201btobetestedafterthe first interconnect level 1258 is formed, without having to wait for fabrication of the microelectronicdevice1200tobecompleted.
  • Thefirstinterconnectlevel1258 alsoincludesfirstinterconnects,notshown,thatprovide electrical connections between components of the microelectronic device 1200.
  • Thefirstinterconnectsandtesttermin alsof thefirstinterconnectlevel1258mayhaveanetchedaluminum structure,withanadhesionlayer, notspecifically shown,oftitanium nitride ortitanium tungsten,on the PMD layer 1256,an aluminum layer,notspecificallyshown,withafew atomicpercentofsilicon,titanium,orcopper, on the adhesion layer,and abarrierlayer,notspecifically shown,oftitanium nitride on the aluminum layer.
  • thefirstinterconnectsandtestterminals may haveadamascenestructure,withabarrierlineroftantalum andtantalum nitrideinaninter
  • aninter-layerdielectric(ILD)layer1259 maybeformedoverthe firstinterconnectlevel1258.
  • TheILD layer1259 mayincludeanetchstoplayer,notspecifically shown,ofsiliconnitrideorsiliconcarbonitrideontheinterconnectsofthefirstinterconnectlevel 1258andthePMD layer1256.
  • TheILD layer1259 may alsoincludeaplanarizedlayerofsilicon dioxide-based dielectricmaterial,notspecifically shown,ofsilicon dioxide,PSG,FSG,BPSG, organosilicateglass(OSG),carbon-dopedoxide(CDO),orotherlow-kdielectricmaterial,onthe etch stoplayer.
  • TheILD layer1259 mayfurtherincludeastoplayerofsiliconnitrideorsilicon carbonitrideontheplanarizedlayerofsilicon dioxide-baseddielectricmaterial.
  • Thestoplayer may provide an etch stop layerfor subsequently-formed etch aluminum interconnects,or a chemicalmechanicalpolish (CMP)stop layerforsubsequently
  • Thevialayer1260 isformedintheILD layer1259.
  • Thevialayer1260 includesvias1261 throughtheILD layer1259,thatmakeelectricalconnectionstothetestterminals1224athrough 1224d,aswellasadditionalvias,notshown,thatmakeelectricalconnectionstothetestterminals on the second and fourth resistorsofthefirstand second RDAMs 1201a and 1201b and the additionalinterconnects,notshown,ofthefirstinterconnectlevel1258.
  • Theverticalconnectors ofthe via layer 1260 are commonly referred to ascontacts.
  • the vias 1261 may include a liner/barrieroftitanium andtitanium nitrideandacoremetaloftungsten.
  • thevias 1261 mayincludealiner/barrieroftantalum andtantalum nitrideandacoremetalofcopper.Other structuresforthevias1261arewithinthescopeofthisexample.
  • a secondinterconnectlevel1262 isformedontheTLD layer1259andthevialayer1260.
  • the second interconnectlevel1262 includesuppertestterminals 1263 connected to thetest terminals1224athrough1224dandthetestterminalsonthesecondandfourthresistorsofthefirst andsecondRDAMs1201aand1201b,throughthevias1261.
  • Thesecondinterconnectlevel1262 also includessecond interconnects,notshown,coupled to componentsin themicroelectronic device 1200.
  • Theuppertestterminals1263 andthesecondinterconnects may havean etched aluminum structure,acopperdamascenestructure,orotherstructure.
  • thevialayer1260andthesecondinterconnectlevel1262 maybeformedby acopper dualdamasceneprocess,with acommon lineroftantalum andtantalum nitrideand acommon coppercoremetalin thevias1261andtheuppertestterminals1263.
  • Forming theuppertest terminals1263 enablesthefirstRDAM 1201aandthesecondRD AM 1201btobetestedafterthe second interconnect level 1262 is formed,without having to wait for fabrication of the microelectronic device 1200 to be completed. Additionaltestterminals may be formed in successiveinterconnectlevelsand abond pad layer,enabling thefirstRDAM 1201aand the secondRD AM 1201btobetestedatvariousstagesofthefabricationprocess.
  • ThefirstRDAM 1201a enablesestimationofamisalignmentdistancebetweenmembers ofaconductorlevelcontainingthefirstresistor1202aandmembersoftheverticalconnectorlevel 1219.
  • ThesecondRD AM 1201b enablesestimationofamisalignmentdistancebetweenmembers ofaconductorlevelcontaining thethirdresistor1202b andmembersoftheverticalconnector level1219.
  • FIG.13 depictsamicroelectronicdevicehavingtwoexampleRDAMswhich may be used to estimate misalignmentbetween members oftwo successive conductor levels.
  • the microelectronicdevice1300 includesafirstconductorlevel1304,averticalconnectorlevel1319, and a second conductorlevel1364.
  • Thefirstconductorlevel1304 includesfirstconductive elements,andmaybemanifestedasany oftheexamplesdisclosedinreferencetotheconductor level104ofFIG.1A.
  • Thesecondconductorlevel1364in cludessecondconductiveelements,and issuccessivetothefirstconductorlevel1304,thatis,thesecondconductorlevel1364isformed afterthefirstconductorlevel1304.
  • Theverticalconnectorlevel1319 includesconductivevertical connectorswhichextendfrom thefirstconductiveelementstothesecondconductiveelements.
  • ThefirstRDAM 1301a includesafirstresistor1302aandasecondresistor1303a,both in thefirstconductorlevel1304.
  • Thesecond resistor1303a isaduplicateofthefirstresistor 1302a,reversedindirection.
  • Thefirstresistor1302aandthesecondresistor1303a mayhaveany oftheshapesandpropertiesdisclosedinreferencetotheexamplesofFIG.1A andFIG.IB,FIG.
  • ThefirstRDAM 1301a includesfirstverticalconnectors1313aof theverticalconnectorlevel1319onupperfaces1314aand 1317aofthefirstresistor1302aand thesecondresistor1303a,respectively,asdisclosedinreferencetotheexamplesofFIG.1A and FIG.IB.
  • FIG.13 shows twoinstancesofthefirstverticalconnectors1313aoneachofthefirst resistor 1302a and the second resistor 1303a;the firstRDAM 1301a may include additional instancesofthefirstverticalconnectors1313aoneachofthefirstresistor1302aandthesecond resistor1303a.
  • Themicroelectronicdevice1300 includesfirsttestterminals1324acoupledtothe firstverticalconnectors1313a,asdisclosedinreferencetoFIG.1A.
  • Thefirsttestterminals1324a may be instancesofthe second conductive elementsofthe second conductorlevel1364,
  • thefirsttestterminals1324a may beelementsofanother conductorlevelofthemicroelectronicdevice 1300.
  • ThefirstRDAM 1301a may beused to estimateafirstmisalignmentdistancebetweenthefirstconductiveelementsofthefirstconductor level1304andtheverticalconnectorsoftheverticalconnectorlevel1319,asdisclosedinreference toFIG.2.
  • ThesecondRDAM 1301b includesathirdresistor1302b and afourthresistor1303b, both in thesecond conductorlevel1364.
  • Thefourth resistor1303b isaduplicateofthethird resistor1302b,reversedindirection.
  • Thethirdresistor1302b andthefourthresistor1303b may haveanyoftheshapesandpropertiesdisclosedinreferencetotheexamplesofFIG.1A andFIG. IB,FIG.2,and FIG.6 through FIG.11.
  • the secondRDAM 1301b includessecondvertical connectors1313boftheverticalconnectorlevel1319contactinglowerfaces1314band1317bof thethirdresistor1302bandthefourthresistor1303b,respectively.
  • FIG.13 showstwoinstances ofthesecondverticalconnectors1313bcontactingeachofthethirdresistor1302bandthefourth resistor1303b;thesecondRDAM 1301bmayincludeadditionalinstancesofthesecondvertical connectors1313b contactingeachofthethirdresistor1302bandthefourthresistor1303b.
  • the lowerfaces1314band 1317bofthethirdresistor1302bandthefourthresistor1303 bareparallel to,butnotcoplanarwith,theupperfaces1314aand1317aofthefirstresistor1302aandthesecond resistor1303a.
  • the second RDAM 1301b ofthisexample furtherincludeslateralconnectors 1365, whichmaybemembersofthefirstconductorlevel1304.Thesecondverticalconnectors1313b contactthelateralconnectors1365. Thelateralconnectors1365extendlaterally pastthethird resistor1302b and thefourth resistor1303b.
  • the secondRDAM 1301b ofthisexample also includesthirdverticalconnectors1366oftheverticalconnectorlevel1319thatcontactthelateral connectors1365.
  • Themicroelectronicdevice1300 includessecondtestterminals1324bcoupled tothethirdverticalconnectors1366,sothatthesecondtestterminals1324b arecoupledtothe thirdresistor1302bandthefourthresistor1303bthroughthesecondverticalconnectors1313b, thelateralconnectors1365,andthethirdverticalconnectors1366.
  • ThesecondRDAM 1301b maybeusedto estimateasecondmisalignmentdistancebetweenthesecondconductiveelementsofthesecond conductorlevel1364andtheverticalconnectorsoftheverticalconnectorlevel1319.
  • Theestimate ofthefirstmisalignmentdistanceandtheestimateofthesecondmisalignmentdistance maybe combinedtoprovideanestimateofmisalignmentbetweenthesecondconductiveelementsofthe secondconductorlevel1364andthefirstconductiveelementsofthefirstconductorlevel1304, which may be usefulwith regard to componentsthatinclude instances ofboth the second conductorlevel1364andthefirstconductorlevel1304,such ascapacitorsandinductorsinan interconnectregionofthemicroelectronicdevice1300.
  • FIG.14A throughFIG.14H aretopviewsandcrosssectionsofamicroelectronicdevice withanRDAM forestimatingamisalignmentdistancebetweenviasandinterconnectsofacopper dualdamascenestructure,depictedin stagesofan examplemethod offormation.
  • FIG.14A atopview,andFIG.14B,acrosssection,themicroelectronicdevice1400includesa firstdielectriclayer1456.Bywayofexample,thefirstdielectriclayer1456maybemanifested asaPMD layeroranILD layerofthemicroelectronicdevice1400.
  • a firstlateralconnector1465aandasecondlateralconnector1465boftheRDAM 1401 areformedinoronthefirstdielectriclayer1456.
  • Thelateralconnectors1465aand 1465b may haveadamascenestructure,andmayincludeafirstbarrierliner1467oftantalum andtantalum nitrideininterconnecttrenches1468inthefirstdielectriclayer1456,withafirstcoppercoremetal 1469in theinterconnecttrenches1468 onthefirstbarrierliner1467.
  • lateralconnectors1465aand 1465b such asetchedaluminum structures,arewithinthescopeof thisexample.
  • Thelateralconnectors1465aand 1465 bareformedconcurrentlywithotherlateral conductors, suchasinterconnects,ofthemicroelectronicdevice1400.
  • FIG.14C ReferringtoFIG.14C,atopview,andFIG.14D,acrosssection,asecond dielectric layer1459 isformed overthefirstdielectriclayer1456 and thelateralconnectors 1465aand 1465b.
  • Theseconddielectriclayer1459 maybemanifestedasanILD layerofthemicroelectronic device1400.
  • a viaetch mask 1470 isformed overthe second dielectriclayer1459,exposing the seconddielectriclayer1459inareasoverthelateralconnectors1465aand1465bforafirstvertical connector1413,asecond verticalconnector1415,afirsttestterminalconnector1466a,and a second testterminalconnector1466b oftheRDAM 1401,aswellasvias,notshown,ofthe microelectronic device 1400.
  • Theviaetchmask 1470 may includephotoresistandmaybeformedbyaphotolithographicprocess.
  • Theviaetchmask 1470 mayincludeanti-reflectionmaterialsuchasbottom anti-reflectioncoat(BARC),andmayinclude hardmaskmaterialsuchasamorphouscarbon.
  • Thepartialviaetchprocess may beimplementedasatimedreactiveionetch(RIE)processusingfluorineradicals.
  • theviaetch mask 1470 isremoved.
  • Organicmaterialandamorphouscarbonintheviaetchmask 1470 mayberemovedbyanoxygen plasmaprocess,followedbyawetcleanprocess,bywayofexample.
  • FIG.14E,atopview,andFIG.14F,acrosssection,atrenchetchmask1472 isformedovertheseconddielectriclayer1459,exposingtheseconddielectriclayer1459inan areaoverthelateralconnectors1465aand1465bforafirstresistor1402,afirsttestterminal1424a, andasecondtestterminal1424boftheRDAM 1401,aswellasinterconnects,notshown,ofthe microelectronicdevice1400.
  • Thefirstresistor1402andthetestterminals1424aand 1424b are showninFIG.14G andFIG.14H.
  • Thetrenchetchmask 1472 mayincludephotoresist,formed byaphotolithographicprocess,andmayincludeanti-reflectionmaterialandhardmaskmaterial.
  • a trench etchprocessisperformedwhichremovesdielectricmaterialfrom thesecond dielectriclayer1459whereexposedbythetrenchetchmask1472,toform aresistortrench1473a, afirsttestterminaltrench 1473b,andasecondtestterminaltrench 1473cintheseconddielectric layer1459forthefirstresistor1402,thefirsttestterminal1424a,andthesecondtestterminal 1424b,respectively,shown inFIG.14G andFIG.14H,andto form interconnecttrenches,not shown,fortheinterconnectsofthemicroelectronicdevice1400.Thetrenches1473a,1473b,and 1473cextendpartwaytothelateralconnectors1465aand1465bandthefirstdielectriclayer1456.
  • Thetrench etch process also removesadditionaldielectricmaterialfrom the second dielectriclayer1459undertheviaholes1471,sothattheviaholes1471extendtothelateral connectors1465aand 1465bwhenthetrenchetchprocessiscompleted.
  • Thetrenchetchprocess mayincludeanetchstopremovaloperationtoclearanetchstoplayerintheseconddielectriclayer 1459.
  • Thetrenchetchprocess maybeimplementedasatimedRIE proceedingsingfluorineradicals. Afterthetrenchetchprocessiscompleted,thetrenchetchmask 1472isremoved.
  • Thesecondbarrier liner1474 mayincludetantalum andtantalum nitride,andmaybeformedby sputteringtantalum ontothe second dielectriclayer1459,and ontothelateralconnectors1465aand 1465b where exposedbytheviaholes1471,followedbyformingtantalum nitridebyanatomiclayerdeposition (ALD)processonthetantalum.
  • ALD atomiclayerdeposition
  • a secondcoppercoremetal1475 isformedonthesecondbarrierliner1474,fillingthe trenches1473a,1473b,and 1473candtheviaholes1471,andextendingoverthetopsurfaceof theseconddielectriclayer1459.
  • Thesecondcoppercoremetal1475 maybeformedbysputtering aseedlayerofcopperonthesecondbarrierliner1474,followedbyelectroplatingcopperonthe seed layer.
  • Additives such asinhibitorsand levelers may beaddedto aplating bath used for electroplatingthecopper,toreducevoidsintheviaholes1471andtoreducean amountofthe copper1475extendingoverthetopsurfaceoftheseconddielectriclayer1459.
  • the secondcoppercoremetal1475andthesecondbarrierliner1474overthetopsurfaceofthesecond dielectriclayer1459,outsideofthetrenches1473a,1473b,and 1473c areremovedby acopper CMP process,leavingthesecondcoppercoremetal1475andthesecondbarrierliner1474inthe trenches1473a,1473b,and 1473candtheviaholes1471,toprovidethefirstresistor1402,the firsttestterminal1424a,the second testterminal1424b,thefirstverticalconnector1413,the secondverticalconnector1415,thefirsttestterminalconnector1466a,andthesecondtestterminal connector1466b.
  • Thefirstresistor1402,withthefirstverticalconnector1413 andthesecond verticalconnector1415 arereferredto asacopperdualdamascenestructure.
  • Thefirstresistor 1402 hasafirstwideportion 1405andafirstnarrow portion 1407.
  • Thefirstverticalconnector 1413 contactsthe firstresistor 1402 in the firstwide portion 1405,and the second vertical connector1415contactsthefirstresistor1402inthefirstnarrow portion 1407.
  • TheRDAM 1401 maybe usedtoestimateamisalignmentdistancebetweenaninterconnectthefirstresistor1402andthe verticalconnectors1413and1415.
  • FIG.15A throughFIG.15D arecrosssectionsofamicroelectronicdevicethatincludes two additionalexampleRDAMsinvolving aresistorand acapacitor,depicted in stagesofan examplemethodofformation.
  • themicroelectronicdevice 1500 maybe manifestedasanyofthemicroelectronicdevicetypesdisclosedinreferencetothemicroelectronic device100ofFIG.1A andFIG.IB.
  • Thesubstrate1549 includesafirstareaforafirstRDAM 1501aanda secondareaforasecondRDAM 1501b.
  • thesubstrate1549 may beimplementedasadielectriclayer,suchasaPMD layeroranILD layer,inthefirstareafora firstRDAM 1501aandinthesecondareaforasecondRDAM 1501b.
  • thelowerconductor1576 is formed overthe substrate1549,andacapacitordielectriclayer1577isformedoverthelowerconductor1576.
  • a firstupperplateresistor1502aofthefirstRD AM 1501a isformedoverthecapacitordielectric layer1577.
  • Thelowerconductor1576 may bean elementofafirstinterconnectlevelofthe microelectronicdevice1500.
  • Thecapacitordielectriclayer1577 maybepartofananti-reflection layerusedtopatternthefirstinterconnectlevel,includingthelowerconductor1576.
  • Thefirst upper plate resistor 1502a may be an element of an upper capacitor plate level of the microelectronicdevice1500.
  • Thelowerconductor1576,thecapacitordielectriclayer1577,and thefirstupperplateresistor1502a maybeformedbyaprocesssequencethatincludesformingan interconnectmetallayerforthefirstinterconnectlevelonthesubstrate1549.
  • Theinterconnect metallayer mayincludeanadhesionlayer,notspecificallyshown,oftitanium nitrideortitanium tungsten,onthesubstrate 1549,an aluminum layer,notspecifically shown,with afew atomic percentofsilicon,titanium,orcopper,ontheadhesionlayer,andabarrierlayer,notspecifically shown,oftitanium nitride on the aluminum layer,similarto thefirstinterconnectlevel1258 disclosed in referenceto FIG.12D.
  • the processsequence iscontinued by forming an antireflectionlayerovertheinterconnectmetallayer,beforetheinterconnectmetallayerispatterned.
  • Theanti-reflectionlayer mayincludealowersub-layer,notspecificallyshown,ofsilicondioxide immediately overtheinterconnectmetallayer,amiddle sub-layer,notspecifically shown,of siliconnitrideoverthelowersub-layer,andanuppersub-layer,notspecificallyshown,ofsilicon dioxideoverthemiddlesub-layer.
  • Theprocesssequence iscontinuedby forming acapacitor upperplatelayerovertheanti-reflectionlayer,beforetheinterconnectmetallayerispatterned.
  • Thecapacitorupperplatelayer may includean adhesion sub-layeroftitanium andamain sublayeroftitanium nitride.
  • Thecapacitorupperplatelayerist henpatternedtoform thefirstupper plateresistor1502aconcurrently with upperplatesofcapacitorsofthemicroelectronicdevice 1500,byanRIE proceedingsinghalogenradicals.
  • Patterningofthecapacitorupperplatelayer is performed so astoleaveasufficientthicknessoftheanti-reflectionlayerovertheinterconnect metallayertoprovideananti-reflectionfunctionality.
  • Theinterconnectmetallayer ispatterned, usingaphotolithographicprocessthatisfacilitatedbytheanti-reflectionlayer,andanRTEprocess usingchlorineradicals,toform thelowerconductor1576,lowercapacitorplatesforthecapacitors, and interconnectsofthefirstinterconnectlevel.
  • Theanti-reflection layer may beleftoverthe lowerconductor1576,lowercapacitor
  • Thefirstupperplateresistor1502a includesafirstwideportion1505aandafirstnarrow portion 1507a.
  • Thefirstupperplateresistor1502a mayhaveanyoftheconfigurationsdisclosed in referencetoFIG.6throughFIG.11.
  • a secondupperplateresistor,notshown,ofthefirst RDAM 1501a isformedconcurrentlywiththefirstupperplateresistor1502a.
  • the second areafora second RDAM 1501b may beleftfreeofthe interconnect metal layer, the anti-reflection layer, and the capacitor upper plate layer.
  • a first ILD sub-layer 1559a is formed over the existing microelectronicdevice1500.
  • ThefirstILD sub-layer1559a mayincludeanetch stoplayer,not specifically shown,ofsilicon nitrideand aplanarized main layer,notspecifically shown,ofa silicondioxide-baseddielectricmaterialontheetchstoplayer.
  • ThefirstILD sub-layer1559a may includeacaplayer,notspecificallyshown,ofsiliconnitride,overtheplanarizedmainlayer.
  • the firstthin film resistor 1502b may include alloysofnickel,chromium,titanium, tantalum,molybdenum,silicon,and any metalsofthe platinum group (ruthenium,rhodium, palladium,osmium,iridium,andplatinum).
  • Thefirstthinfilm resistor1502b mayincludeother elements, suchasaluminum,copper,oxygen,nitrogen,orcarbon,toimpartdesiredpropertiesto thefirstthin film resistor1502b.
  • Othercompositionsforthefirstthin film resistor1502b are withinthescopeofthisexample.
  • Thefirstthin film resistor1502b includesasecondwideportion 1505b and asecond narrow portion 1507b.
  • Thefirstthin film resistor1502b may have any oftheconfigurations disclosedinreferencetoFIG.6throughFIG.11.A secondthinfilm resistor,notshown,ofthe secondRDAM 1501bisformedconcurrentlywiththefirstthinfilm resistor1502b.
  • a second ILD sub-layer 1559b isformed overthe existing microelectronicdevice 1500.
  • ThesecondILD sub-layer1559b may includean etch stoplayer, notspecificallyshown,ofsiliconnitrideandaplanarizedmainlayer,notspecificallyshown,ofa silicondioxide-baseddielectricmaterialontheetchstoplayer.
  • ThesecondILD sub-layer1559b mayincludeaCMP stoplayer,notspecifically shown,ofsiliconnitrideorsilicon carbonitride, overtheplanarizedmainlayer.
  • a firstshallow verticalconnector1513bandasecondshallow verticalconnector1515b areformedthroughthesecondILD sub-layer1559btomakecontacttothefirstthinfilm resistor 1502b in the second wideportion 1505b and the second narrow portion 1507b ,respectively.
  • the shallow vertical connectors 1513b and 1515b may be part of a shallow via level of the microelectronicdevice1500,andmaybeformedbyanyoftheprocessesdisclosedinreferenceto viasherein.
  • the firstRDAM 1501a enablesestimation of a firstmisalignmentdistancebetween membersofthedeepvialevelwithrespecttomembersoftheuppercapacitorplatelevelofthe microelectronic device 1500.
  • the second RDAM 1501b enables estimation of a second misalignmentdistancebetweenmembersoftheshallow vialevelwithrespecttomembersofthe thinfilm resistivelevelofthemicroelectronicdevice1500.
  • FIG.16A through FIG.16C are crosssectionsofa microelectronic devicewith an exampleRDAM involving bond pads,depictedin stagesofan examplemethod offormation.
  • the microelectronic device 1600 may be manifested as any ofthe microelectronicdevicetypesdisclosedinreferencetothemicroelectronicdevice100ofFIG.1A andFIG.IB.
  • Themicroelectronicdevice1600ofthisexample includesatopdielectriclayer1659.
  • Inoneversionofthisexample,thetopdielectriclayer1659 maybeimplementedasanILD layer, andmayhavethestructureandcompositiondisclosedinreferencetotheILD layer1259ofFIG.
  • thetop dielectric layer 1659 may be implementedasacaplayeroveratopinterconnectlevel,andmayincludesilicondioxide,silicon nitride,siliconoxynitride,orpolyimide,byway ofexample.Othercompositionsandstructures forthetopdielectriclayer1659arewithinthescopeofthisexample.
  • a firstlateralconnector1665aandasecondlateralconnector1665b areformedonthe topdielectriclayer1659inanareafortheRDAM 1601.
  • Thelateralconnectors1665aand 1665b areelectricallyconductive,andarepartofaconductorlevelofthemicroelectronicdevice1600.
  • a thirdlateralconnector,notshown,andafourthlateralconnector,notshown,oftheRDAM 1601 areformed concurrently with thelateralconnectors 1665aand 1665b.
  • Interconnects having aplated structure may includean adhesion layer,notshown,onthetop dielectriclayer 1659,withcopperinterconnectsontheadhesionlayer.
  • Theplatedinterconnects maybeformed bysputteringtheadhesionlayer,containingtitanium,onthetopdielectriclayer1659,followedby sputteringaseedlayer,notshown,ofcopperontheadhesionlayer.A platingmaskisformedon theseedlayerthatexposesareasfortheinterconnectsandthelateralconnectors1665aand1665b.
  • Theplatedinterconnects areformedbyelectroplatingcopperontheseedlayerwhereexposedby theplatingmask.
  • Theplatingmaskis removed,andtheseedlayerandtheadhesionlayerbetween theinterconnectsareremovedbywetetching.
  • theconductor level includingthelateralconnectors1665aand1665b,maybepartofaninput/output(I/O)pad levelofthemicroelectronicdevice1600,tobeconnectedtoanRDL.
  • Theinput/outputpadlevel mayhaveaplatedstructure.
  • aprotectiveovercoat(PO)layer 1678 isformed overthetop dielectriclayer1659 andthelateralconnectors1665aand 1665b.
  • oneormorelayersofdielectricmaterial such assilicon dioxide, silicon nitride,silicon oxynitride,aluminum oxide,polyimide,benzocyclobutene (BCB),or polybenzoxazole(PBO),bywayofexample.I/O padopenings1679extendthroughthePO layer 1678,exposing thelateralconnector
  • TheI/O pad openings 1679 may be formedbyanetchprocessaftertheoneormorelayersofdielectricmaterialofthePO layer1678 areformed.
  • theI/O padopenings1679 maybeformedaspartsoftheoneormore layersofdielectricmaterial,byaphotolithographicprocessforphotosensitivedielectricmaterial, suchasphotosensitivepolyimide.
  • a top conductor level 1604 is formed on the existing microelectronicdevice1600,withtopconductormetalextendingoverthePO layer1678andinto theI/O pad openings 1679 to make connectionsto the conductorlevel,including the lateral connectors1665aand 1665b.
  • thetopconductorlevel1604 may beimplementedasabondpadlevel,andmayincludeanadhesionsublayeroftitanium ortitanium tungsten,mayincludeapadsublayerofnickelorpalladium,andmayincludeabonding surface metalofaluminum,gold,orplatinum,bywayofexample.
  • the topconductorlevel1604 maybeimplementedasanRDL,andmayhaveaplatedstructure.
  • Thetop conductorlevel1604 includesafirstresistor1602 ofthetop conductorlevel 1604.
  • Thefirstresistor1602 hasafirstwideportion 1605andafirstnarrow portion 1607.
  • the firstwideportion 1605extendsaroundoneoftheI/O padopenings1679,andthetopconductor levelmetalextendingintothatI/O padopening1679 providesafirstverticalconnector1613from thefirstwideportion 1605tothefirstlateralconnector1665a.
  • Thefirstnarrow portion 1607 extendsaroundanotheroftheI/O padopenings1679,andthetopconductorlevelmetalextending intothatI/O padopening 1679providesasecondverticalconnector1615from thefirstnarrow portion 1607tothesecondlateralconnector1665b.
  • Thetopconductorlevel1604 alsoincludesafirsttestterminal1624aandasecondtest terminal1624b ofthetop conductorlevel1604.
  • Thefirsttestterminal1624aextendsarounda thirdoftheI/O padopenings1679,andthetopconductorlevelmetalextendingintothatI/O pad opening 1679 providesafirsttestterminalconnector1666afrom thefirsttestterminal1624ato thefirstlateralconnector1665a.
  • thefirsttestterminal1624a iscoupledtothefirstwide portion 1605throughthefirsttestterminalconnector1666a,thefirstlateralconnector1665a,and thefirstverticalconnector1613.
  • thesecondtestterminal1624bextendsaroundafourth oftheI/O padopenings1679,andthetopconductorlevelmetalextendingintothatI/O padopening 1679 providesasecondtestterminalconnector1666bfrom thesecondtestterminal1624btothe secondlateralconnector1665b.Thus,thesecondtestterminal1624biscoupledtothefirstnarrow portion 1607 through the second testterminalconnector 1666b,the second lateralconnector 1665b,andthe secondverticalconnector1615.
  • Thefirstverticalconnector1613,the second verticalconnector 1615,the firsttestterminalconnector 1666a,and the second testterminal connector1666b aremembersofaverticalconnectorlevel1619 ofthemicroelectronicdevice 1600thatconnectsmembersofthetop conductorlevel1604tomembersoftheconductorlevel thatincludesthelateralconnectors1665aand 1665b.
  • Theverticalconnectorlevel1619 maybea bondpadvialeveloranRDL vialevel,conformingtotheimplementationsforthetopconductor level1604disclosedinthisexample.
  • a secondresistor,notshown,oftheRDAM 1601andadditionaltestterminals,alsonot shown,oftheRDAM 1601 are formed concurrently with the firstresistor 1602 and thetest terminals1624aand 1624b,andarecoupledtothethirdandfourthlateralconnectorsinasimilar configuration.
  • TheRDAM 1601 enablesestimation ofamisalignmentdistancebetweentheI/O pad openings 1679andthebondpadsofthemicroelectronicdevice1600.
  • FIG.17 isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving aburiedlayer.
  • Themicroelectronicdevice1700 maybemanifestedasanyofthemicroelectronic devicetypesdisclosedinreferencetothemicroelectronicdevice 100ofFIG.1A andFIG.IB.
  • Themicroelectronicdevice1700ofthisexampleisformedinandonasubstrate1749 thatincludes a semiconductor material 1750 having a firstconductivity type.
  • the first conductivitytype maybep-type,asindicatedinFIG.17.
  • a firstresistor1702 oftheRDAM 1701 isformedin aburiedlayerlevel1704ofthe substrate 1749.
  • Thefirstresistor1702 hassemiconductormaterialwith asecond conductivity type,oppositefrom thefirstconductivitytype.
  • the firstconductivity typemaybep-type,thesecond conductivity type may ben-type,asindicatedinFIG.17.
  • the buriedlayerlevel1704 mayincludeburiedlayers,notshown,alsohavingthesecondconductivity type,in the substrate 1749.
  • Theburied layers may provideisolation forcomponents,buried collectorforbipolarjunctiontransistors,andsourceregionsforjunctionfieldeffecttransistors,by way ofexample.
  • a secondresistor,notshown,oftheRDAM 1701 isformedintheburiedlayerlevel1704.
  • a field reliefdielectriclayer1751 maybeformedinandonthesubstrate1749.
  • a firstverticalconnector1713 isformedthroughthefieldreliefdielectriclayer1751and throughthesemiconductormaterial1750overthefirstresistor1702,makingcontacttothefirst wideportion 1705.
  • a secondverticalconnector1715 isformedthroughthefieldreliefdielectric layer1751andthesemiconductormaterial1750overthefirstresistor1702,makingcontacttothe firstnarrow portion 1707.
  • Theverticalconnectors 1713 and 1715 arepartsofaburied layer connectorlevelofthemicroelectronicdevice 1700,andmay beimplemented asdeeptrenches, havingconductivecores1780laterallysurroundedbyinsulatingliners1781.
  • Theconductivecores 1780 may includepolysilicon havingthesecond conductivity type.
  • Theinsulatingliners1781 may includesilicondioxideformedbythermaloxidationofsilicon.
  • a thirdverticalconnector notshown,isformedthroughthefieldreliefdielectriclayer1751andthroughthesemiconductor material1750 overthe second resistor,making contactto the second wideportion.
  • a fourth verticalconnector notshown,isformedthroughthefieldreliefdielectriclayer1751andthrough thesemiconductormaterial1750overthesecondresistor,makingcontacttothesecondnarrow portion. Additionaldeep trenches,notshown,may beformed concurrently with thefirstand secondverticalconnectors1713and1715,andthethirdandfourthverticalconnectors,toprovide electricalconnectionstotheburiedlayersinthesubstrate1749.
  • a PMD layer1756 maybeformedoverexistingmicroelectronicdevice1700.
  • Contacts 1766 areformedthroughthePMD layer1756tomakeelectricalconnectionstothefirstandsecond verticalconnectors1713and1715,andthethirdandfourthverticalconnectors.
  • Thecontacts1766 maybeformedasdisclosedinreferencetotheverticalconnectorlevel1219ofFIG.12C.
  • the contacts1766 arepartofaverticalinterconnectlevelthatincludesadditionalcontacts,whichmake connectionstocomponentsofthemicroelectronicdevice1700.
  • TheRDAM 1701 enablesestimationofamisalignmentdistancebetween buried layer connectors of the buried layer connector level and the buried layers in the microelectronicdevice1700.
  • FIG.18 isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving atwo-dimensionalelectrongas(2DEG)inaIII-V semiconductordevice.
  • theterm “III-V” isunderstoodtorefertosemiconductormaterialsinwhichgroupIII elements,thatis,aluminum,gallium,andindium,andpossibly boron,provideaportion ofthe atomsinthesemiconductormaterialandgroupV elements,thatis,nitrogen,phosphorus,arsenic, andantimony provideanotherportion oftheatomsinthesemiconductormaterial.
  • Themicroelectronicdevice 1800 ofthisexample includesabaselayer1850 ofTTT-V semiconductormaterial.
  • Thebaselayer1850 iscommonlyreferredtoasanunintentionallydoped (UID)layer.
  • UID unintentionallydoped
  • Forgallium nitridedevices,thebaselayer1850 maybe almostgallium nitride.
  • Thecarrier layer1882 mayhaveastoichiometrythatissimilarto,orthesameas,astoichiometryofanupper sub-layerofthebaselayer1850.
  • a barrierlayer1883 isformedoverthecarrierlayer1882.
  • the barrierlayer hasahigherbandgapenergythanthecarrierlayer1882,andhasdifferentcomposition than the carrierlayer 1882.
  • thebarrierlayer 1883 may include aluminum nitrideoraluminum gallium nitride.Bywayofexample.Thebarrierlayer1883exerts stressonthecarrierlayer1882,resultingina2DEG 1884beingformedinthecarrierlayer1882 underthebarrierlayer1883.
  • The2DEG 1884 iselectricallyconductive,andispresentevenwhen themicroelectronicdevice 1800isunpowered.
  • The2DEG 1884 isamemberofa2DEG level whichprovides2DEGsinfieldeffecttransistorsofthemicroelectronicdevice1800.
  • the barrierlayer 1883 ispatterned,forexample by an RIE proceedingsing chlorine radicals.
  • Thecarrierlayer1882 mayalsobepatternedwiththebarrierlayer1883,asdepictedin FIG.18,ormaybeleftunpatterned.Patterningthebarrierlayer1883resultsinthe2DEG 1884 havingthesameshapeasthepatternedbarrierlayer1883.
  • Thebarrierlayer1883 ispatternedso thatthe2DEG 1884providesafirstresistor1802oftheRDAM 1801.
  • Thefirstresistor1802 has afirstwideportion 1805andafirstnarrow portion 1807.
  • Thebarrierlayer1883 isconcurrently patternedinotherareasofthemicroelectronicdevice1800toform componentssuchastransistors.
  • a firstverticalconnector1813 isformed through thebarrierlayer1883 to makean electricalconnectiontothefirstresistor1802,thatis,tothe2DEG 1884,inthefirstwideportion 1805.
  • a second verticalconnector1815 isformedthroughthebarrierlayer1883to makean electricalconnection to the firstresistor 1802 in the firstnarrow portion 1807.
  • Thevertical connectors1813 and 1815 arepartsofaverticalconnectorlevelofthemicroelectronicdevice 1800 thatincludes source/drain contactsto field effecttransistors (FETs).
  • Testterminals1824 areformedtomakeelectricalconnectionstothefirstand second verticalconnectors1813and1815,andthethirdandfourthverticalconnectors.
  • Thetestterminals 1824 may be formed concurrently with interconnects to the source/drain contacts in the microelectronicdevice1800.
  • Thetestterminals1824 mayincludeanadhesionlayercontaining titanium andabondinglayercontainingaluminum,bywayofexample.
  • TheRDAM 1801 enables estimationofamisalignmentdistancebetweensource/draincontactsoftheverticalconnectorlevel andthebarrierlayersinthemicroelectronicdevice1800.
  • FIG.19 isatopview ofacrossbridgeteststructure usedtoestimatesheetresistance andtoestimatealinewidthcorrection.
  • Theestimatedsheetresistanceandlinewidthcorrection maybeappliedtothemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimate ofthemisalignmentdistance.
  • Themicroelectronicdevice1900ofthisexample includesthecrossbridgeteststructure 1985formedon asubstrate 1949.
  • Thecrossbridgetest structure1985 includesacrossresistor1986formedintheconductorlevelthatcontainsthefirst resistorandthesecondresistoroftheRD AM.
  • Thecrossbridgeteststructure1985 alsoincludes sixtestterminalconnectors1966a,1966b,1966c,1966d,1966e,and 1966fthatmakeelectrical connectionstothecrossresistor1986.Testterminalconnectors1966athrough 1966dcontactthe crossresistor1986onfourbranchesaroundanintersection 1987ofthecrossresistor1986.Test terminalconnectors1966d,1966e,and1966fcontactthecrossresistor1986alongalinearbranch, intheorderlisted.
  • the sheetresistanceofthe crossresistor 1986 may be estimated by forcing currents through adjacentpairs of the testterminals 1924a through 1924d and measuring potential differencesacrossremainingpairsofthetestterminals1924athrough1924d,dividingthepotential differencesbythecorresponding currentstoobtainresistances,andaveragingtheresistancesto obtainanaverageresistanceRavg.
  • ThesheetresistanceRsheetmaybeestimatedasRsheet n Ravg/ ln(2),whereitisapproximately 3.14159,andln(2)isthenaturallogarithm of2,approximately 0.693147.Morecomplexmethodsofestimatingthesheetresistanceusingthepotentialdifferences andthecorrespondingcurrentsarewithinthescopeofthisexample.
  • ThesheetresistanceRsheet maybeusedinthemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimateof themisalignmentdistance.
  • FIG.20 isatopview ofathree-resistorteststructureusedtoestimatesheetresistance andtoestimatealinewidthcorrection.
  • Theestimatedsheetresistanceandlinewidthcorrection maybeappliedtothemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimate ofthemisalignmentdistance.
  • a microelectronicdevice2000in includesatleastoneRDAM,not shown,havingafirstresistorandasecondresistorofaconductorlevel,withverticalconnectors whicharemembersofaverticalconnectorlevel.
  • Themicroelectronicdevice2000ofthisexample includesthethree-resistorteststructure2085formedonasubstrate2049.
  • Thethree-resistortest structure2085 includesafirstresistor2086a,asecondresistor2086b,andathirdresistor2086c.
  • Thethree-resistorteststructure2085 includesfirsttestterminalconnectors2066aon eachendofthefirstresistor2086a.
  • Thefirstresistor2086a has afirstbodylengthLibetweenthe firsttestterminalconnectors2066a,withafirstdesignbodywidth Wi.des.
  • Thethree-resistortest structure2085 includessecondtestterminalconnectors2066boneachendofthesecondresistor 2086b.
  • Thesecondresistor2086b hasasecondbodylengthA?betweenthesecondtestterminal connectors2066b,withaseconddesignbodywidth W2,des.
  • Thethree-resistorteststructure2085 includesthirdtestterminalconnectors2066coneachendofthethirdresistor2086c.
  • Thethird resistor2086chasathirdbodylengthLsbetweenthethirdtestterminalconnectors2066c witha thirddesignbodywidth Wi.des.
  • TheheadresistanceRn.head includestheresistanceofthetestterminalconnectors2066a, 2066b,and2066c,aninterfaceresistancebetweenthetestterminalconnectors2066a,2066b,and 2066candthecorrespondingresistors2086a,2086b,and2086c,andaresistanceoftheresistors 2086a,2086b,and2086coutsideofthebodylengthsLi,L2,andLi.TheheadresistanceRnjieadis taken to be inversely proportionalto the corresponding design body width Wn.des.
  • the head resistanceRn.headmaybeexpressedasRn,head R ’headIWn.des,whereR ’headx'saheadresistivity,and isaconstantthatischaracteristicoftheheadresistanceRn.head.
  • ThebodyresistanceRn.body isproportionaltothecorrespondingbody lengthL n andthe sheetresistanceRsheetoftheresistors2086a,2086b,and2086c,andinverselyproportionaltothe corresponding corrected design body width Wn.des-A W.
  • FIG.21A andFIG.21B aretopviewsofan examplemicroelectronicdeviceincluding RDAMs,depictedinstagesofformation.ReferringtoFIG.21A,themicroelectronicdevice2100 isformedinandonasubstrate2149concurrentlywithadditionalmicroelectronicdevices2100a.
  • the microelectronic device 2100 and the additionalmicroelectronic devices 2100a may be manifestedasanyofthemicroelectronicdevicetypesdisclosedinreferencetothemicroelectronic device100ofFIG.1A andFIG.IB.
  • Thesubstrate2149 maybeimplementedasasemiconductor wafer,aglass,sapphire,orpolymersubstrateforMEMSormicrofluidicdevices,oracomposite substrateincluding bothsemiconductormaterialanddielectricmaterial,bywayofexample.
  • the microelectronicdevice2100 containscomponents,labeled “COMPONENTS”inFIG.21A and FIG.2IB.
  • Themicroelectronicdevice2100andtheadditionalmicroelectronicdevices2100a may havescribeseals2188 and 2188a,respectively,surroundingthecomponents.
  • Thescribeseals 2188and2188a mayincludecontinuousinterconnectsandcontinuousviasordensediscretevias, toreducecrackpropagationandimpurityinfdtrationintothecomponents.
  • Singulationlanes2189 commonlyreferredtoasscribelanesorstreets,saw lanesorstreets,dicinglanesorstreets,extend betweenthemicroelectronicdevice2100andtheadditionalmicroelectronicdevices2100a.
  • the singulationlanes2189 mayextendtothescribeseals2188and2188a,ormayextendpartwayto thescribeseals2188and2188a.
  • Themicroelectronic device2100 ofthisexamplein cludesan internalRDAM 2101a locatedinsidethescribeseal2188.
  • TheinternalRD AM 2101ain includesinternaltestterminals 2124acoupledtotheverticalconnectors.
  • Theinternaltestterminals2124a mayextendtoprobe padsatatopsurfaceofthemicroelectronicdevice2100,toenableprobingafterfabricationofthe microelectronicdevice2100iscompleted,ormayextendtobondpadstoenablewirebondingthe internaltestterminals2124aduringassemblyofthemicroelectronicdevice2100toallow testing theinternalRDAM 2101a afterpackaging themicroelectronic
  • Theinternaltest terminals2124a maybecoupledtotheverticalconnectorsthroughamultiplexer,labeled “MUX” inFIG.21A andFIG.21B.
  • Themultiplexer mayadvantageouslyenabletestingapluralityoftest structuresusingarelatively smallnumberofprobe/bondpads.
  • TheinternalRDAM 2101a may bereferredtoasanon-chipparametric(OCP)teststructure.
  • Themicroelectronicdevice2100ofthisexample alsoincludesexternalRD AMs2101b locatedoutsideofthescribeseal2188,in cornerregions.
  • TheexternalRDAMs2101b maybe locatedinareasofthemicroelectronicdevice2100thatexperiencehighstress,suchascornersof themicroelectronicdevice2100,and thusdo notcontain components.
  • the externalRDAMs 2101b maybeformedaccordingtoanyoftheexamplesdisclosedherein.TheexternalRDAMs 2101bmayalsobereferredtoasOCPteststructures.
  • the microelectronic device 2100 ofthis example further includes singulation lane RDAMs 2101clocatedoutsidethescribeseals2188and2188a,on sidesofthemicroelectronic device2100.
  • ThesingulationlaneRDAMs2101c mayextendintothesingulationlanes2189,as depictedinFIG.21AandFIG.21B.
  • ThesingulationlaneRDAMs2101c maybeformedaccording toanyoftheexamplesdisclosedherein.
  • the substrate 2149 isremoved from the singulation lanes 2189, singulating the microelectronic device 2100 from the additional microelectronicdevices2100a.
  • TheinternalRDAM 2101 aremainsinplaceinthemicroelectronic device2100afterthemicroelectronicdevice2100issingulated.
  • Oneormoreportions,orall,ofoneormoreofthesingulationlaneRD AMs2101c mayremaininthesingulatedmicroelectronicdevice2100.
  • Theportionsofthesingulationlane RD AMs2101c may be presentin the microelectronic device 2100 afterpackaging,thatis, connectiontoexternalleadsandencapsulation,forexample,iscompleted.
  • any oftheRDAMsdisclosed herein mayhavesingleresistors,asdisclosedinreferencetoFIG.1A,ormayhaveapluralityof resistorsconnected serially,asdepicted disclosed in referencetoFIG.4.
  • any oftheRDAMs disclosedherein mayincludeareferenceresistorpair,asdisclosedinreferencetoFIG.3. Anyof theRDAMs disclosedhereinmayhaveresistorsandverticalconnectorsconfiguredasdisclosed inreferencetoFIG.6throughFIG.11. AnyoftheRDAMsdisclosedhereinmayhaveresistors formedinaninterconnectlevel,agatelevel,adiffusedlayerlevelinasemiconductorsubstrate,a resistorlevel,acapacitorplatelevel,abondpadlevel,anRDL level,aburiedlayerlevelin a semiconductor substrate,or a 2DEG levelin a III-V semiconductor material.
  • any ofthe microelectronicdevicesdisclosedherein mayincludeoneormoreRDAMsconfiguredtomeasure a misalignment distance in one direction or in two orthogonal directions. Any of the microelectronicdevicesdisclosedhereinmayincludeacrossbridgeteststructure,asdisclosedin referencetoFIG.19. Any ofthemicroelectronicdevicesdisclosedhereinmay includeathree- resistorteststructure,asdisclosedinreferencetoFIG.20.

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Abstract

A microelectronic device (100) includes a resistive differential alignment monitor (RD AM) (101), including a first variable-width resistor (102) and a second variable-width resistor (103), which are members of a conductor level (104). Each of the resistors (102) and (103) include a wide portion (105) and (109) and a narrow portion (107) and (111). The RD AM (101) further includes a vertical connector (113a), (113b), (115), (116a), (116b), and (118) to each of the wide portion (105) and the narrow portion (107) of the first variable- width resistor (102), and to the wide portion (109) and the narrow portion (111) of the second variable-width resistor (103). The vertical connectors (113a), (113b), (115), (116a), (116b), and (118) are members of a vertical connector level (119). Test terminals (124a), (124b), (124c), and (124d) are coupled to the vertical connectors (113a), (113b), (115), (116a), (116b), and (118). The vertical connectors (113a), (113b), and (115) to the first variable-width resistor (102) and the vertical connectors (116a), (116b), and (118) to the second variable-width resistor (103) are separated by equal distances and are oriented anti-parallel to each other. The RD AM (101) may be used to estimate a misalignment distance between the members of the vertical connector level (119) and the members of the conductor level (104).

Description

RESISTIVE DIFFERENTIAL ALIGNMENTMONITOR
[0001] Thisdisclosurerelatestothefieldofmicroelectronicdevices.Moreparticularly,butnot exclusively,thisdisclosurerelatestoteststructuresinmicroelectronicdevices.
BACKGROUND
[0002] Microelectronicdevicesareformedinpatternedlayers,suchasdielectriclayers,metal layers, and semiconductor layers,which are patterned using photolithographic processes. Unwanted effects during fabrication ofthe microelectronic devices may cause some ofthe patternedlayerstobemisalignedwithrespecttoeachother.Misalignmentmay degradedevice performanceandreliability.
SUMMARY
[0003] The present disclosure introduces a microelectronic device including a resistive differentialalignmentmonitor(RDAM),including afirstvariable-width resistorand a second variable-width resistor. Thevariable-width resistorsaremembersofa conductorlevelofthe microelectronicdevice. Each ofthefirstvariable-width resistorandthesecondvariable-width resistorinclude awideportion and anarrow portion. TheRDAM furtherincludesavertical connectorcontacting each ofthewide portion ofthe firstvariable-width resistor,the narrow portionofthefirstvariable-widthresistor,thewideportionofthesecondvariable-widthresistor, andthenarrow portionofthesecondvariable-widthresistor.Theverticalconnectorsaremembers ofaverticalconnectorlevelofthemicroelectronicdevice. Theverticalconnectorstothefirst variable-width resistor and the verticalconnectorsto the second variable-width resistor are separated by equaldistances. The firstvariable-width resistorand the second variable-width resistorareorientedanti-paralleltoeachother.
BRIEFDESCRIPTION OF THE VIEWSOF THE DRAWINGS
[0004] FIG.1A isaperspectiveview andFIG.IB isatopview ofanexamplemicroelectronic devicethatincludesanRDAM.
[0005] FIG.2isatopview ofanexamplefirstresistorandsecondresistorofanRDAM. [0006] FIG.3isatopview ofanotherexampleRDAM includingareferenceresistorpair. [0007] FIG.4isatopview ofanexampleRDAM configuredtoestimatemisalignmentintwo orthogonaldirections.
[0008] FIG.5isachartofmeasurementsacquiredusingacalibrationRDAM. [0009] FTG.6isatopview ofanexampleresistorofanRDAM,showingplacementofvertical connectors.
[0010] FIG.7isatopview ofanotherexampleresistorofanRDAM,showingplacementof verticalconnectors.
[0011] FIG.8isatopview ofafurtherexampleofaresistorofanRDAM,showingplacement ofverticalconnectors.
[0012] FIG.9isatopview ofanexampleofanRDAM,showingstretchedverticalconnectors.
[0013] FIG.10isatopview ofanexampleofataperedresistorofanRDAM.
[0014] FIG.11isatopview ofanexampleofnon-symmetricshapedresistorsofanRDAM.
[0015] FIG.12A throughFIG.12E arecrosssectionsofamicroelectronicdevicehavingtwo exampleRD AMs,depictedinstagesofanexamplemethodofformation.
[0016] FIG.13 depictsamicroelectronicdevicehavingtwoexampleRDAMswhich may be usedtoestimatemisalignmentbetweenmembersoftwosuccessiveconductorlevels.
[0017] FIG.14A throughFIG.14H aretopviewsandcrosssectionsofamicroelectronicdevice withanRDAM forestimatingamisalignmentdistancebetweenviasandinterconnectsofacopper dualdamascenestructure,depictedinstagesofanexamplemethodofformation.
[0018] FIG.15A throughFIG.15D arecrosssectionsofamicroelectronicdevicethatincludes two additionalexampleRDAMsinvolving aresistorand acapacitor,depicted in stagesofan examplemethodofformation.
[0019] FIG.16A through FIG.16C are crosssectionsofa microelectronic devicewith an exampleRDAM involvingbondpads,depictedinstagesofanexamplemethodofformation.
[0020] FIG.17isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving aburiedlayer.
[0021] FIG.18isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving atwo-dimensionalelectrongas(2DEG)inaIII-V semiconductordevice.
[0022] FIG.19isatopview ofacrossbridgeteststructureusedtoestimatesheetresistanceand linewidthcorrection.
[0023] FIG.20isatopview ofathree-resistorteststructureusedtoestimatesheetresistance andlinewidthcorrection.
[0024] FIG.21A andFIG.21B aretopviewsofan examplemicroelectronicdeviceincluding RDAMs,depictedinstagesofformation. DETAILED DESCRIPTION OFEXAMPLE EMBODIMENTS
[0025] Thepresentdisclosureisdescribedwithreferencetotheattachedfigures. Thefigures arenotdrawntoscaleandtheyareprovidedmerelytoillustratethedisclosure.Severalaspectsof thedisclosurearedescribedbelow withreferencetoexampleapplicationsforillustration.Itshould beunderstoodthatnumerousspecificdetails,relationships,andmethodsaresetforthtoprovide anunderstandingofthedisclosure.Thepresentdisclosureisnotlimitedbytheillustratedordering ofactsorevents,assomeactsmayoccurindifferentordersand/orconcurrentlywithotheractsor events.Furthermore,notallillustratedactsoreventsarerequiredtoimplementamethodologyin accordancewiththepresentdisclosure.
[0026] In addition,although some ofthe embodimentsillustrated herein are shown in two dimensionalviewswithvariousregionshavingdepthandwidth,itshouldbeclearlyunderstood thattheseregionsareillustrationsofonlyaportionofadevicethatisactuallyathreedimensional structure. Accordingly,theseregionswillhavethreedimensions,including length,width,and depth,whenfabricatedonanactualdevice.Moreover,whilethepresentinventionisillustrated byembodimentsdirectedtoactivedevices,itisnotintendedthattheseillustrationsbealimitation onthescopeorapplicabilityofthepresentinvention.Itisnotintendedthattheactivedevicesof thepresentinventionbelimitedtothephysicalstructuresillustrated.Thesestructuresareincluded to demonstrate the utility and application of the present invention to presently preferred embodiments.
[0027] Forthe purposes ofthis disclosure,the term “conductive” is to be interpreted as “electrically conductive”. Theterm “conductive”refersto materialsand structurescapableof supportingasteadyelectricalcurrent,thatis,directcurrent(DC).
[0028] Featuresofelements,suchaswidthsandlengths,describedasbeingequalareconsidered equalwithinfabricationtolerancesencounteredduringfabricationoftherespectiveelements.The fabricationtolerancesincludetolerancesduetounwantedvariationsingeometriesofphotomasks usedinphotolithographicprocessestoform therespectiveelements,aswellastolerancesdueto unwantedvariationsindepositionandetchprocesses.
[0029] Forthepurposesofthisdisclosure,theterms “vertical”and “vertically”refertodirections perpendiculartoafaceofaresistorin aresistivedifferentialalignmentmonitor(RDAM). The terms “lateral”and “laterally”refertodirectionsparalleltothefaceoftheresistor. [0030] FTG.1A isaperspectiveview andFIG.IB isatopview ofanexamplemicroelectronic device thatincludes an RDAM. The microelectronic device 100 may be manifested asan integratedcircuit,amicroelectricalmechanicalsystem (MEMS)device,anelectro-opticaldevice, oramicrofluidicdevice,by way ofexample. TheRDAM 101includesafirstvariable-width resistor102,hereinafterthe “firstresistor”andasecondvariable-widthresistor103,hereinafter the “second resistor”,formed in aconductorlevel104. Theconductorlevel104 may be,for example,an interconnectlevel containing aluminum or copper interconnects,a gate level containingpolycrystallinesiliconandmetalsilicidegates,adiffusedlayerlevelinasemiconductor substrate,aresistorlevelin an interconnectregion,a capacitorplate level,abond pad level, redistribution layer(RDL)level,aburied layerlevelin a semiconductorsubstrate,oratwo- dimensionalelectrongas(2DEG)levelinaIILV semiconductormaterial.Othermanifestations oftheconductorlevel104arewithinthescopeofthisdisclosure.
[0031] The firstresistor 102 and the second resistor 103 have same sublayerswith same compositions,asaresultofbeingformedconcurrently.Theterm “formedconcurrently”includes elementsformedusingascanninglithographyprocess,inwhichascanningexposurestepexposes thepatternforoneoftheelementsbeforeexposingthepatternforanotheroftheelementsinthe samescan.Theterm “formedconcurrently”includeselementsformedusingetchprocessesused to define the elements,in which the etch processmay complete one ofthe elementsbefore completing anotheroftheelements,dueto variationsin the etch process. Theterm “formed concurrently”includeselementsformedbyotherprocesses,suchaswetetchorcleanprocesses, anddepositionorgrowthprocess,inwhichtheprocessmaycompleteoneoftheelementsbefore completinganotheroftheelements,duetovariationsintheprocess.
[0032] Thefirstresistor102hasafirstwideportion 105andafirstnarrow portion 107separate from thefirstwideportion 105. Thesecondresistor103hasasecondwideportion 109 and a secondnarrow portion 111separatefrom thesecondwideportion 109.
[0033] TheRDAM 101includesfirstwideportionverticalconnectors113aand113bcontacting afirstface 114 ofthefirstresistor102 in thefirstwideportion 105. TheRDAM 101further includesafirstnarrow portion verticalconnector115 contacting thefirstface 114 ofthefirst resistor102 in thefirstnarrow portion 107. Thefirstwideportion 105 hasafirstwidth 106 adjacenttothefirstwideportionverticalconnectors113aand 113b,on asideofthefirstwide portionverticalconnectors113aand 113bfacingthefirstnarrow portion 107.Thefirstnarrow portion 107hasasecondwidth 108adjacenttothefirstnarrow portionverticalconnector115,on asideofthefirstnarrow portionverticalconnector115facingthefirstwideportion105.Thefirst width 106isgreaterthanthesecondwidth 108.Thefirstwideportion 105mayhaveauniform width,equalto the firstwidth 106,along its length,as depicted in FIG.IB,which may advantageouslyprovidemoreuniform currentflow inthefirstwideportion 105duringoperation oftheRDAM 101.Similarly,thefirstnarrow portion 107mayhaveauniform width,equaltothe secondwidth 108,alongitslength,asdepictedinFIG.IB,which may advantageouslyprovide moreuniform currentflow inthefirstnarrow portion 107duringoperationoftheRDAM 101.
[0034] Similarly,theRDAM 101includessecondwideportionverticalconnectors116aand 116bcontactingasecondface117ofthesecondresistor103inthesecondwideportion 109.The RDAM 101furtherincludesasecondnarrow portionverticalconnector118contactingthesecond face117ofthesecondresistor103inthesecondnarrow portion 111.Thesecondwideportion 109hasathirdwidth 110adjacenttothesecondwideportionverticalconnectors116aand 116b, onasideofthesecondwideportionverticalconnectors116aand 116bfacingthesecondnarrow portion 111.Thesecondnarrow portion111hasafourthwidth112adjacenttothesecondnarrow portionverticalconnector118,onasideofthesecondnarrow portionverticalconnector118facing thesecondwideportion 109.Thethirdwidth 110isgreaterthanthefourthwidth 112.
[0035] Thefirstwideportionverticalconnectors113aand113b,thefirstnarrow portionvertical connector115,thesecondwideportionverticalconnectors116aand116b,andthesecondnarrow portionverticalconnector118aremembersofaverticalconnectorlevel119ofthemicroelectronic device 100,suchasacontactleveltocomponentsofthemicroelectronicdevice100,avialevel betweeninterconnectlevels,abondpadvialevel,anRDLvialevel,adeeptrenchconnectorlevel, orsource/draincontactstoa2DEG levelinaIII-V semiconductormaterial,byway ofexample. Othermanifestationsoftheverticalconnectorlevel119 arewithinthescopeofthisdisclosure. Membersofaverticalconnectorlevel119 areformed concurrently. In someversionsofthis example,theRDAM 101mayincludeonlyasinglefirstwideportionverticalconnectorcontacting thefirstwideportion105andasinglesecondwideportionverticalconnectorcontactingthesecond wideportion 109.Inotherversions,theRDAM 101mayincludethreeormorefirstwideportion verticalconnectorscontactingthefirstwideportion 105andthreeormoresecondwideportion verticalconnectorscontactingthesecondwideportion 109.Infurtherversions,theRDAM 101 may includetwo ormorefirstnarrow portion verticalconnectorscontacting the firstnarrow portion 107 andtwo ormoresecond narrow portion verticalconnectorscontacting thesecond narrow portion 111.
[0036] Thesecondface117ofthesecondresistor103iscoplanarwiththefirstface114ofthe firstresistor102,asaresultofthefirstresistor102 and the second resistor103 being in the conductorlevel104.Thefirstwideportionverticalconnectors113aand113bareseparatedfrom thefirstnarrow portionverticalconnector115byafirstresistorlength 120thatextendsinafirst direction121from thefirstnarrow portionverticalconnector115tothefirstwideportionvertical connectors 113a and 113b. The second wide portion verticalconnectors 116a and 116b are separatedfrom thesecondnarrow portionverticalconnector118byasecondresistorlength 122 thatextendsinaseconddirection 123from thesecondnarrow portionverticalconnector118to thesecondwideportionverticalconnectors116aand 116b.Thefirstresistorlength 120andthe secondresistorlength122areequal.Theseconddirection123isanti-paralleltothefirstdirection 121,thatis,thesecond direction 123andthefirstdirection 121pointin oppositedirectionson parallellines,oronthesameline.
[0037] Themicroelectronicdevice100includesfirstthroughfourthtestterminals124a,124b, 124c,and 124d,respectively.Thetestterminals124athrough 124daresometimesreferredtoas probepads,astheRDAM 101maybetestedbyconnectingtestinstrumentstothetestterminals 124athrough 124dby probes. Thefirsttestterminal124aiscoupledtothefirstwideportion verticalconnectors113aand 113b.Thesecondtestterminal124biscoupledtothefirstnarrow portionverticalconnector115.Thethirdtestterminal124ciscoupledtothesecondwideportion verticalconnectors116aand116b.Thefourthtestterminal124discoupledtothesecondnarrow portion verticalconnector118. Thetestterminals124a,124b,124c,and 124d areelectrically conductive,andmaybeinaninterconnectlevelorbondpadlevel,suitableforprobing.Thetest terminals124a,124b,124c,and124dmaybedirectlycoupledtotheverticalconnectors113aand 113b,115,116aand 116b,and 118,asdepictedinFIG.1A,ormay becoupledtothevertical connectors 113a and 113b, 115, 116a and 116b,and 118 through intermediate conductive structuressuch asinterconnectsand vias. Thetestterminals 124a,124b,124c,and 124d are omittedfrom FIG.IB inordertoshow theplacementoftheverticalconnectors113aand 113b, 115,116aand 116b,and118moreclearly. [0038] TheRDAM 101enablesestimationofamisalignmentdistancebetweenmembersofthe conductorlevel104andmembersoftheverticalconnectorlevel119.Themisalignmentdistance maybealongthefirstdirection 121ortheseconddirection 123.
[0039] FIG.2isatopview ofanexamplefirstresistorandsecondresistorofanRDAM.The firstresistor202hasafirstwideportion205andafirstnarrow portion207adjacenttothefirst wideportion205.TheRDAM 201includesfirstwideportionverticalconnectors213aand213b onafirstface214ofthefirstresistor202inthefirstwideportion205,andincludesafirstnarrow portion verticalconnector215 contacting thefirstface214 ofthefirstresistor202 in thefirst narrow portion207.Thesecondresistor203hasasecondwideportion209andasecondnarrow portion 211adjacentto the secondwideportion 209. TheRDAM 201includessecond wide portionverticalconnectors216aand216bonasecondface217ofthesecondresistor203inthe secondwideportion209,andincludesasecondnarrow portionverticalconnector218contacting thesecondface217ofthesecondresistor203inthesecondnarrow portion211.
[0040] Thefirstwideportion205hasafirstwidth206adjacenttothefirstwideportionvertical connectors213aand213b,onasideofthefirstwideportionverticalconnectors213aand213b facingthefirstnarrow portion207.Thefirstnarrow portion207hasasecondwidth208adjacent tothefirstnarrow portionverticalconnector215,on asideofthefirstnarrow portionvertical connector215facingthefirstwideportion205. Thefirstwidth206isgreaterthanthesecond width208.
[0041] Thesecondwideportion209hasathirdwidth210adjacenttothesecondwideportion verticalconnectors216aand216b,onasideofthesecondwideportionverticalconnectors216a and216bfacingthesecondnarrow portion211.Thesecondnarrow portion211hasafourthwidth 212adjacenttothesecondnarrow portionverticalconnector218,onasideofthesecondnarrow portionverticalconnector218facingthesecondwideportion209.Thethirdwidth210isgreater thanthefourthwidth212.
[0042] Thefirstresistor202andthesecondresistor203aredesignedsothatthefirstwidth206 ofthefirstwideportion205isequaltothethirdwidth210ofthesecondwideportion209,and bothhaveavalueWwide,asnotedinFIG.2.Similarly,thefirstresistor202andthesecondresistor 203aredesignedsothatthesecondwidth208ofthefirstnarrow portion207isequaltothefourth width212ofthesecondnarrow portion211,andbothhaveavalueWnarr,asnotedinFIG.2. [0043] Inthisexample,theverticalconnectors213aand213b,215,216aand216b,and218are misalignedwithrespecttothefirstresistor202andthesecondresistor203.Thatis,locationsof the firstwide portion verticalconnectors213a and 213b,are shifted from firstwide portion nominalpositions225aand225bbyamisalignmentdistanceAxinthexdirection.Thexdirection extendsfrom thefirstwideportionverticalconnectors213aand 213b toward thefirstnarrow portionverticalconnector215,asindicatedbythecoordinatesystem 226.A locationofthefirst narrow portionverticalconnector215isshiftedfrom afirstnarrow portionnominalposition227 inthexdirectionbythemisalignmentdistanceAx.Locationsofthesecondwideportionvertical connectors216aand216b,areshiftedfrom secondwideportionnominalpositions228aand228b inthexdirectionbythemisalignmentdistanceAx.A locationofthesecondnarrow portionvertical connector218isshiftedfrom asecondnarrow portionnominalposition229inthexdirectionby themisalignmentdistanceAx. Thenominalpositions225aand225b,227,228aand228b,and 229arethepositionstheverticalconnectors213aand213b,215,216aand216b,and218would haveifnomisalignmenthad occurred. Theverticalconnectors213aand 213b,215,216aand 216b,and218mayalsobemisalignedintheydirection,asindicatedinFIG.2.
[0044] TheRDAM 201enablesestimation ofamisalignmentdistancebetweenmembersofa conductorlevelcontainingthefirstresistor202 andthesecondresistor203 and membersofa verticalconnectorlevelcontainingtheverticalconnectors213a,213b,215,216a,216b,and218. DuringoperationoftheRDAM 201,afirstresistanceRiofthefirstresistor202ismeasured,and asecondresistanceR2ofthesecondresistor203ismeasured.ThefirstresistanceRimayinclude extraneousresistancecontributionsfrom thefirstwideportionverticalconnectors213aand213b and the first narrow portion vertical connector 215, and may further include resistance contributionsfrom testterminalscoupled to theverticalconnectors213a and 213b and 215. Similarly,the second resistanceR2may include extraneousresistance contributionsfrom the secondwideportion verticalconnectors216aand216b andthesecondnarrow portionvertical connector218,andmayfurtherincluderesistancecontributionsfrom testterminalscoupledtothe verticalconnectors216aand216band218.
[0045] Functionality oftheRD AM 201may beunderstoodby examining componentsofthe firstresistanceRifrom portionsofthefirstresistor202,andsimilarlyforcomponentsofthesecond resistanceR2from portionsofthesecondresistor203.Consideringthefirstresistor202,afirst componentRiwconnofthefirstresistanceRiisfrom anareaofthefirstwideportion205underand aroundthefirstwideportionverticalconnectors213aand213b.ThefirstcomponentRiwconnis sometimesreferredtoasaheadresistanceatthefirstwideportionverticalconnectors213aand 213b.ThefirstcomponentRiwconnmaybeaffectedbythesizeandnumberoffirstwideportion verticalconnectors213aand213bandspacingbetweenthefirstwideportionverticalconnectors 213aand213b.
[0046] A second componentRi^ideofthefirstresistanceRiisfrom an areaofthefirstwide portion 205,extending afirstwidelengthLiwtdefrom thefirstwideportionverticalconnectors 213aand213btoafirsttransitionregion230ataboundarybetweenthefirstwideportion205and thefirstnarrow portion207.ThesecondcomponentRt^tdehasavalueofRsheet* (LiwtdeIWwtde), whereRsheetisasheetresistanceofthefirstresistor202andthesecondresistor203.Thefirstwide lengthLhvtdemaybeexpressedintermsofawidenominallengthLyvide,nom^whichisalengthfrom thefirstwideportionnominalpositions225aand225btothefirsttransitionregion230,andthe misalignmentdistanceAx: Lhvtde~ IAvide.iiom.-Ax. Then,the second componentRivtdemay be expressedasRsheetx ((h idenom - Ax)IWwide).
[0047] A thirdcomponentRitransofthefirstresistanceRiisfrom thefirsttransitionregion230. ThethirdcomponentRitransmaybeaffectedbyashapeofthefirstresistor202inthefirsttransition region230.Forexample,asharptransition,asdepictedinFIG.2,mayproduceathirdcomponent Ritransthatisdifferentfrom aresistorhavingagentle,distributedtransition.
[0048] A fourth componentRinarrofthefirstresistanceRiisfrom an areaofthefirstnarrow portion207,extendingafirstnarrow lengthLinarrfrom thefirsttransitionregion230tothefirst narrow portionverticalconnector215.ThefourthcomponentRinarrhasavalueofRsheetx (Linarr I Wnarr). Thefirstnarrow lengthLinarrmay beexpressed in termsofanarrow nominallength Lnarr.nom.whichisalengthfrom thefirsttransitionregion230tothefirstnarrow portionnominal position227,andthemisalignmentdistanceAx:Linarr~Lnarr,nom+Ax.Then,thefourthcomponent RinarrmaybeexpressedasRsheetx ((Lnarr,nom + Ax)IWnarr).
[0049] A fifth componentRiNconnofthefirstresistanceRiisfrom an areaofthefirstnarrow portion207underandaroundthefirstnarrow portionverticalconnector215.Thefifthcomponent RiNconnissometimesreferredtoasaheadresistanceatthefirstnarrow portionverticalconnector 215. Thefifth componentRiNconnmaybeaffectedbythesize,number,and spacing ofthefirst narrow portionverticalconnectors215. [0050] ThefirstresistanceRimaybeexpressedasasum ofthefivecomponents,intermsofthe misalignmentdistanceAx.
Equation 1:
Figure imgf000012_0001
[0051] ThesecondresistanceR2ofthesecondresistor203maybeexaminedinasimilarmanner, andcomponentsofthesecondresistanceRzmaybeidentified.A firstcomponentRdwconnofthe secondresistanceR2isfrom anareaofthesecondwideportion209underandaroundthesecond wideportionverticalconnectors216aand216b.Thefirstresistor202andthesecondresistor203 aredesignedtohavesimilarlayouts,reversedfrom eachotheralongthex direction,sothatthe firstcomponentRiwconnofthesecondresistanceR2isequaltothefirstcomponentRIwconnofthe firstresistanceRI,withintolerancesencounteredin fabrication ofthefirstresistor202 andthe secondresistor203.
[0052] A secondcomponentR2wtdeofthesecondresistanceR2isfrom anareaofthesecondwide portion 209,extending a second wide length Ldwidefrom the second wide portion vertical connectors216aand216bto asecondtransition region 231ataboundary betweenthesecond wideportion209andthesecondnarrow portion211.ThesecondcomponentR2widehasavalueof Rsheetx (L2wideI Wwide). Thesecond widelengthL2widemay beexpressed in termsofthewide nominallengthLwide.nom^whichisalengthfrom thesecondwideportionnominalpositions228a and228btothesecondtransitionregion231,andthemisalignmentdistanceΔx:L2wide Lwide.nom + Ax.Then,thesecondcomponentR2widemaybeexpressedasRsheetx ((Lwide.nom +-Ax)IWwide). Thefirstresistor202 andthesecondresistor203 aredesignedtohavetherespectivedistances from the nominalpositions225a and 225b,and 228a and 228b,ofthewide portion vertical connectors213aand213b,and216aand216b,tothetransitionregions230and231,tobothbe equaltoLwide.nom.
[0053] A thirdcomponentR2transofthesecondresistanceR2isfrom thesecondtransitionregion 231.Thefirstresistor202andthesecondresistor203aredesignedtohavetherespectivetransition regions230and231withequalshapes,sothatR2transequalsRltrans.
[0054] A fourth componentR2narrofthe second resistanceR2isfrom an areaofthe second narrow portion211,extendingasecondnarrow lengthL2narrfrom thesecondtransitionregion231 tothesecondnarrow portionverticalconnector218.ThefourthcomponentR2narrhasavalueof Rsheet (J,2narrIWnarr).Thesecondnarrow lengthJ^narrmaybeexpressedintermsofthenarrow nominallengthLnarr.nom,which isalength from thesecondtransition region 231tothesecond narrow portion nominalposition229,andthemisalignmentdistanceΔx: L2narr~ Lnarr,nom ~Δx. Then,thefourthcomponentR2narrmaybeexpressedasRsheetx {(Lnarr.nom + Δx)IWnarr).Thefirst resistor202 andthesecondresistor203 aredesignedtohavetherespectivedistancesfrom the transition regions230 and 231,to thenominalpositions227,and 229,ofthenarrow portion verticalconnectors215,and218,tobothbeequaltoLnarr,nom.
[0055] A fifthcomponentR2NconnofthesecondresistanceR2isfrom anareaofthesecondnarrow portion211underandaroundthesecondnarrow portionverticalconnector218.Thefirstresistor 202 andthesecondresistor203 aredesignedtohavesimilarlayouts,reversedfrom each other alongthexdirection,sothatthefifthcomponentR2NconnofthesecondresistanceR2isequaltothe fifth componentRINconnofthefirstresistanceRi,withintolerancesencounteredinfabricationof thefirstresistor202andthesecondresistor203.
[0056] ThesecondresistanceR2maybeexpressedasasum ofthefivecomponents,intermsof themisalignmentdistanceAx.
Equation2:
Figure imgf000013_0001
[0057] A difference between the firstresistance Riand the second resistance R2may be expressedbysubtractingEquation1from Equation2,notingthatR2Wconnequals
Figure imgf000013_0002
thatR2Nconn equalsRixconn,andthatR2transequalsRitrans,asexpressedinEquation3.
Equation3: Ax
Figure imgf000013_0003
[0058] ThemisalignmentdistanceAxmaybeestimatedfrom Equation3bydividingbothsides by2Rsheet(1/W narr- 1/Wwtde),asexpressedinEquation4.
Equation4:
Figure imgf000013_0004
[0059] The value of the sheet resistance Rsheetmay be obtained from process monitor measurements.Thevaluesofthefirstandthirdwidths206and210ofthewideportions205and 209ofthefirstresistor202andthesecondresistor203maybeobtainedfrom design data,and may becorrectedusing linewidth monitormeasurements. Thevaluesofthesecond andfourth widths208and212 ofthenarrow portions207and211ofthefirstresistor202 andthesecond resistor203 may be obtained by similarmeans. Thus,themisalignmentdistanceAx may be estimated in absoluteunitsusing Equation 4,which may advantageously beused to monitor misalignment.Misalignmentvaluesmay beusedtocorrectphotolithography processesusedin forming conductorlevelscorrespondingtotheconductorlevelcontainingtheresistors202 and 203,ormay beusedto correctphotolithography processesused in forming verticalconnector levelscorrespondingtotheverticalconnectorlevelcontainingtheverticalconnectors213a,213b, 215,216a,216b,and218.
[0060] FIG.3isatopview ofanotherexampleRDAM includingareferenceresistorpair.The RDAM 301includesafirstresistor302,asecondresistor303andareferenceresistorpair332. Thefirstresistor302andthesecondresistor303havethepropertiesdisclosedinreferencetoany oftheexamplesherein,includingwideportionsandnarrow portions.Thereferenceresistorpair 332includesafirstduplicateresistor302aandasecondduplicateresistor303a.Thefirstresistor 302andthefirstduplicateresistor302ahaveequaldimensionsandasamefirstorientation.The second resistor303 and the second duplicateresistor303ahaveequaldimensionsand a same secondorientation,anti-paralleltothefirstorientation.TheRD AM 301furtherincludesvertical connectors313onthewideportionsandthenarrow portionsofthefirstresistor302,thesecond resistor303,thefirstduplicateresistor302a,andthesecondduplicateresistor303a,asdisclosed inreferencetotheRD AM 101ofFIG.1A andFIG.IB andtheRD AM 201ofFIG.2.Thefirst duplicateresistor302aandthesecond duplicateresistor303aarecoupledin seriesthroughthe verticalconnectors313byaconductivelink333.Theconductivelink333makescontacttoends oftheverticalconnectors313 opposite from the firstduplicate resistor302a and the second duplicateresistor303a. Thefirstduplicateresistor302aandthesecondduplicateresistor303a may be coupled in seriesthrough theverticalconnectors313 on the narrow portionsofthe duplicateresistors302aand303a,asdepictedinFIG.3.Alternatively,thefirstduplicateresistor 302a and the second duplicate resistor303a may be coupled in seriesthrough the vertical connectors313onthewideportionsoftheduplicateresistors302aand303a.Inafurtherversion ofthisexample,thefirstduplicateresistor302aandthesecondduplicateresistor303amay be coupledfrom wideportiontonarrow portion. [0061] Testterminals324arecoupledtotheverticalconnectors313onthefirstresistor302and thesecondresistor303,asdisclosedinreferencetotheRDAM 101ofFIG.1A.Additionaltest terminals324aarecoupledtotheverticalconnectors313 on theportionsofthefirstduplicate resistor302aandthesecondduplicateresistor303awhicharenotcoupledtogetherinseries.For theversionofthisexampledepictedinFIG.3,theadditionaltestterminals324aarecoupledto theverticalconnectors313onthewideportionsofthefirstduplicateresistor302aandthesecond duplicateresistor303a.Theconductivelink333maybelocatedinasameconductivelevelasthe testterminals324andtheadditionaltestterminals324a.Theadditionaltestterminals324aenable measurementofaresistanceofthereferenceresistorpair332,whichincludesaresistanceofthe firstduplicateresistor302aandaresistanceofthesecondduplicateresistor303a.
[0062] Thereferenceresistorpair332 may enableaquantitativecheckontheestimateofthe misalignmentdistanceAx,disclosedinreferencetoFIG.2. TheresistanceRrefofthereference resistorpair332isexpectedtobeequaltothesum oftheresistancesofthefirstresistor302and thesecondresistor303,Ri+ R2,duetothefirstduplicateresistor302aandthesecondduplicate resistor303ahaving equaldimensionsand orientationstothefirstresistor302 andthesecond resistor303.Anydifferencebetweentheresistanceofthereferenceresistorpair332andthesum oftheresistancesofthefirstresistor302andthesecondresistor303,thatis\Rref-(Ri+R2)\,may beattributedtounwantedvariationsinfeaturesofthereferenceresistorpair332,thefirstresistor 302,andthesecondresistor303,causingextraneouscontributionstotheresistances.Instancesof theRDAM 301inwhich amagnitudeofthedifferencebetweentheresistanceofthereference resistorpair332andthesum oftheresistancesofthefirstresistor302andthesecondresistor303 issignificantlylessthanamagnitudeofthedifferenceoftheresistancesofthefirstresistor302 andthesecondresistor303,thatis,\Rref-(Ri+R2)\« \Ri-R2\,mayindicatetheestimateofthe misalignmentdistanceAx isaccurate. Conversely,instancesoftheRDAM 301in which the magnitudeofthedifferencebetweentheresistanceofthereferenceresistorpair332andthesum ofthe resistances ofthe firstresistor302 and the second resistor303 iscomparable to the magnitudeofthedifferenceoftheresistancesofthefirstresistor302andthesecondresistor303, thatis,\Rref- (Ri+ R2)\> \Ri-R?\,mayindicatetheestimateofthemisalignmentdistanceAxis undependable.
[0063] FIG.4isatopview ofanexampleRDAM configuredtoestimatemisalignmentintwo orthogonaldirections. TheRDAM 401includesafirsthorizontalresistorchain 434with first horizontalresistors402a and a second horizontalresistor chain 435 with second horizontal resistors403a. Thefirsthorizontalresistors402aandthesecondhorizontalresistors403ahave thepropertiesdisclosedinreferencetoany oftheexamplesherein,includingwideportionsand narrow portions.
[0064] The firsthorizontalresistors402a are duplicatesofeach other. Thefirsthorizontal resistors402aareconnectedseriallythroughconductivelinks433,wideportiontonarrow portion, throughverticalconnectors413onthewideportionsandthenarrow portionsofthefirsthorizontal resistors402a.Thefirsthorizontalresistors402aareallorientedhorizontally,thatis,thevertical connectors413onthewideportionsoneachfirsthorizontalresistor402aareseparatedfrom the verticalconnectors413onthenarrow portionsalongafirsthorizontaldirection.Instancesofthe firsthorizontalresistors402aatendsofthefirsthorizontalresistorchain434arecoupledtotest terminals424.
[0065] Thesecondhorizontalresistors403aareduplicatesofeachother.Thesecondhorizontal resistors403aareconnected serially through theconductivelinks433,wideportion to narrow portion,throughverticalconnectors413onthewideportionsandthenarrow portionsofthesecond horizontalresistors403a.Thesecondhorizontalresistors403aareallorientedhorizontally,that is,theverticalconnectors413onthewideportionson each secondhorizontalresistor403aare separated from theverticalconnectors413 on thenarrow portionsalong a second horizontal direction,anti-paralleltothefirsthorizontaldirection.Instancesofthesecondhorizontalresistors 403a atendsofthefirsthorizontalresistorchain 434 are coupled to testterminals424. The conductivelinks433maybecoplanarwiththetestterminals424.
[0066] Thefirsthorizontalresistorchain434andthesecondhorizontalresistorchain435may beusedto estimateahorizontalmisalignmentdistancebetween membersofaconductorlevel containingthefirsthorizontalresistors402aandthesecondhorizontalresistors403aandmembers ofa verticalconnectorlevelcontaining theverticalconnectors413. A firsthorizontalchain resistance,Richain.horiz,maybemeasuredusingthetestterminals424coupledtothefirsthorizontal resistorchain434.Anaveragefirsthorizontalresistance,Riavg,horiz,ofthefirsthorizontalresistors 402amaybeobtainedbydividingthefirsthorizontalchainresistance,Rlchain,horiz^bythenumber, Nihoriz,ofthefirsthorizontalresistors402ainthefirsthorizontalresistorchain434,asexpressed inEquation5.
Equation5: R]avg,horiz=Rlchain,horiz/N Ihoi‘iz
[0067] A second horizontal chain resistance,R2chain,horiz,may be measured using the test terminals424coupledtothesecondhorizontalresistorchain435.Anaveragesecondhorizontal resistance,R2avg,horiz,ofthe second horizontalresistors403amay be obtained by dividing the second horizontalchain resistance,R2chain.horiz,by thenumber,N2horiz,ofthe second horizontal resistors403ainthesecondhorizontalresistorchain435,asexpressedinEquation6.
Equation6:
R2avg,horiz=R2chain,horiz/N 2horiz
[0068] The average firsthorizontalresistance,Riavg,horiz,and the average second horizontal resistance,R2avg,horiz,maythenbesubtractedtoestimatethehorizontalmisalignmentdistance,as disclosedinreferencetoFIG.2.Thefirsthorizontalresistorchain434andthesecondhorizontal resistorchain435may includeasufficientnumberofthefirsthorizontalresistors402aandthe second horizontalresistors403a,respectively,to provide valuesofthe firsthorizontalchain resistance,Richain.horiz,andthesecondhorizontalchainresistance,R2chain,horiz,thataremoreeasily measuredthan singleresistors.Forexample,thevaluesofthefirsthorizontalchainresistance, Richain,horiz,andthesecondhorizontalchainresistance,R2chcdn,horiz,maybe10ohmsto10kilo-ohms (kohms).Theresistorchains434and435maybeparticularlyadvantageousforinstancesofthe resistors402aand403afabricatedin conductivelevelswhich havesheetresistancevaluesless than0.10ohms/square,suchasinterconnectlevels.Havingmultipleinstancesoftheresistors402a and403aintheresistorchains434and435mayprovidemoreaccurateestimatesoftheaverage horizontalresistances,Riavg,horiz,andR2avg,horiz,inthepresenceofparasiticresistances,suchasin thetestterminals424.
[0069] TheRDAM 401includesafirstverticalresistorchain 436with firstverticalresistors 402bandasecondverticalresistorchain437withsecondverticalresistors403b.Thefirstvertical resistors402bandthesecondverticalresistors403bhavethepropertiesdisclosedinreferenceto any ofthe examplesherein,including wide portionsand narrow portions. The firstvertical resistors402bareduplicatesofeachother,andareorientedparalleltoeachother,andthesecond verticalresistors403bareduplicatesofeachother.Thefirstverticalresistors402bandthesecond verticalresistors403bareorientedperpendicularlytothehorizontalresistors402aand403a.The firstverticalresistors402b andthesecondverticalresistors403b maybeduplicatesofthefirst horizontalresistors402aandthesecondhorizontalresistors403a. [0070] Thefirstverticalresistors402bareconnectedseriallythroughtheconductivelinks433 throughverticalconnectors413,andinstancesofthefirstverticalresistors402batendsofthefirst verticalresistorchain436arecoupledtotestterminals424,asdisclosedforthefirsthorizontal resistors402a. Thesecondverticalresistors403b aresimilarly connected serially through the conductivelinks433throughverticalconnectors413,andcoupledtotestterminals424.
[0071] Thefirstverticalresistorchain 436 andthesecondverticalresistorchain 437may be usedtoestimateaverticalmisalignmentdistance,followingtheproceduredisclosedforestimating thehorizontalmisalignmentdistance.Usingthefirstverticalresistorchain436andthesecond verticalresistorchain437,eachhavingmultipleinstancesofthefirstverticalresistors402b and thesecondverticalresistors403b,respectively,mayprovidetheadvantagesdisclosedinreference tothefirsthorizontalresistorchain434andthesecondhorizontalresistorchain435.
[0072] FIG.5isachartofmeasurementsacquiredusingacalibrationRDAM.Thecalibration RDAM, notshown,includesafirstresistorchainoffirstresistorsandasecondresistorchainof secondresistors,andverticalconnectors,similartotheresistorchains434and435ofFIG.4.In theRDAM usedinthisexample,theverticalconnectorshaveanominallengthandwidth,parallel toaplaneoftheresistors,of300nanometers.ThecalibrationRDAM furtherincludesadditional pairsofresistorchainsinwhichtheverticalconnectorswereintentionally displacedinpositive andnegativeincrementsof25nanometers.Theresistorswereformedinathinfilm resistorlayer, andtheverticalconnectorswereformedinavialevel.Eachpairofresistorchainswasmeasured, andthecorrespondingmisalignmentdistancewasestimated.Theestimateddisplacementofthe verticalconnectorswasplotted againsttheintentional(calibrated)displacementofthevertical connectorsinthechartofFIG.5.A least-squarestrendlineofthedatahasaslopeof1.050,and an interceptof26 nanometers,corresponding to thecaseofnointentionaldisplacement. The estimateddisplacementshaveacorrelationR2 of0.989tothecalibrateddisplacements.Deviations of the estimated displacements from the trendline are attributed to geometry errors in the photomaskusedtoform theverticalconnectors,aswellasvariationsencounteredindepositionof thethinfdm level,patterningtheresistors,andetchingviaholesfortheverticalconnectors.The data shown in thechartofFIG.5indicatestheRDAM iscapableofestimating misalignment distancesforviasonthinfdm resistorlayerswithin6nanometersto7nanometers,significantly lessthanthealloweddisplacementtoleranceof100nanometers. [0073] FIG.6isatopview ofanexampleresistorofanRDAM,showingplacementofvertical connectors.TheRDAM 601includesafirstresistor602,andasecondresistor,notshowninFIG. 6,whichisamirrorduplicateofthefirstresistor602.Thefirstresistor602includesawideportion 605andanarrow portion607adjacenttothewideportion605.Inthisexample,thewideportion 605extendspastthenarrow portion607byafirstwidthincrement638aonafirstsideofthefirst resistor602,andbyasecondwidthincrement638bonasecondsideofthefirstresistor602.The firstwidthincrement638aandthesecondwidthincrement638bmaybeequal.TheRDAM 601 ofthisexampleincludesawideportionverticalconnector613onaface614ofthefirstresistor 602inthewideportion605,andincludesanarrow portionverticalconnector615contactingthe face614ofthefirstresistor602inthenarrow portion607.Thewideportionverticalconnector 613 isseparated from thenarrow portion verticalconnector615by aresistorlength 620 that extendsinafirstdirection621from thenarrow portionverticalconnector615tothewideportion verticalconnector613.Thewideportion605hasafirstwidth606adjacenttothewideportion verticalconnector613,on asideofthewideportion verticalconnector613 facing thenarrow portion607.Thenarrow portion607hasasecondwidth608adjacenttothenarrow portionvertical connector615,onasideofthenarrow portionverticalconnector615facingthewideportion605. Thefirstwidth606isgreaterthanthesecondwidth608.
[0074] Thewideportionverticalconnector613hasafirstinlinedimension639aparalleltothe firstdirection621andafirsttransversedimension639bperpendiculartothefirstdirection621. Thefirstinlinedimension639aandthefirsttransversedimension639barelateraldimensionsof thewide portion verticalconnector613,thatis,the firstinline dimension 639a and thefirst transversedimension 639b areparalleltotheface614,andaretaken attheface614. Thefirst inlinedimension639amaybeequaltothefirsttransversedimension639b,asdepictedinFIG.6. Alternatively,thefirstinlinedimension 639amaybegreaterthanthefirsttransversedimension 639b,orthefirstinlinedimension639amaybelessthanthefirsttransversedimension639b.
[0075] Thenarrow portionverticalconnector615hasasecondinlinedimension640aparallel to the firstdirection 621 and a second transverse dimension 640b perpendicularto the first direction621.Thesecondinlinedimension640aandthesecondtransversedimension640b are lateraldimensions,taken attheface614. The second inline dimension 640a and the second transversedimension640bmaybeequal,asdepictedinFIG.6,ormaybeunequal.Thesecond inlinedimension640aandthesecondtransversedimension640bmaybeequaltothefirstinline dimension639aandthefirsttransversedimension639b,ormaybedifferent.
[0076] Theverticalconnectors613and615mayhaveroundedcomersorroundedshapes,due toimagedeformationinaphotolithographyprocessusedtoform theverticalconnectors613and 615. Theinlinedimensions639aand 640aaretaken asmaximum dimensionsofthevertical connectors613and615,respectively,paralleltothefirstdirection621.Thetransversedimensions 639b and 640b are taken asmaximum dimensions ofthe verticalconnectors 613 and 615, respectively,perpendiculartothefirstdirection621.
[0077] PerformanceoftheRDAM 601,withregardtoestimatingamisalignmentdistanceofthe verticalconnectors613and615withrespecttothefirstresistor602,maybeenhancedbyforming the firstresistor602 to extend pastthe verticalconnectors613 and 615 so thatthevertical connectors613and615arecompletelylocatedontheface614ofthefirstresistor602,thatis,the verticalconnectors613and615donotextendoveranedgeofthefirstresistor602.Specifically, thefirstresistor602extendspastthewideportionverticalconnector613tothefirstsideofthe firstresistor602byafirstwidthextension641a,extendspastthewideportionverticalconnector 613tothesecondsideofthefirstresistor602byasecondwidthextension641b,andextendspast thewideportionverticalconnector613in adirectionoppositefrom thenarrow portionvertical connector615by afirstlength extension 641c. Theextensions641a,641b,and 641cmay be equal,ormaybedifferent.Similarly,thefirstresistor602extendspastthenarrow portionvertical connector615tothefirstsideofthefirstresistor602byathirdwidthextension642a,extendspast thenarrow portionverticalconnector615tothesecondsideofthefirstresistor602by afourth widthextension642b,andextendspastthenarrow portionverticalconnector615inadirection oppositefrom thewideportionverticalconnector613by asecondlength extension 642c. The extensions642a,642b,and642cmaybeequal,ormaybedifferent.Thewidthextensions641a, 641b,642a,and642bmayadvantageouslybelargerthananexpectedmisalignmentofthevertical connectors613and615perpendiculartothefirstdirection621.Thisadvantagemaybeattained by formingthefirstresistor602 sothatthewidth extensions641a,641b,642a,and642b areat leastaslargeasaminimum ofthelateraldimensionsoftheverticalconnectors613and615atthe face614,referredtohereinastheminimum verticalconnectiondimension,whichisaminimum oftheinlinedimensions639aand640aandthetransversedimensions639band640bofthevertical connectors613 and 615. Similarly,the firstresistor602 may be formed so thatthe length extensions641cand642careatleastaslargeastheminimum verticalconnectiondimension.
[0078] DuringoperationoftheRDAM 601,aresistanceofthefirstresistor602ismeasured.As disclosedinreferencetoFIG.2,theresistanceofthefirstresistor602maybedividedintofive components.
[0079] A firstcomponentisfrom an areaofthewideportion 605underandaroundthewide portionverticalconnector613.Asnotedabove,performanceoftheRD AM 601maybeenhanced whenthefirstresistor602extendspastthewideportionverticalconnector613onallsides.
[0080] A secondcomponentisfrom an areaofthewideportion605,extendingawidelength 643from thewideportionverticalconnector613toatransitionregion630ataboundarybetween thewideportion605andthenarrow portion607. Thewidelength 643correspondstothefirst widelengthLiwideofFIG.2.PerformanceoftheRDAM 601mayfurtherbeenhancedbyforming thefirstresistor602sothatthewidelength643is2to5timestheminimum verticalconnection dimension.Ifthewidelength643islessthan2timestheminimum verticalconnectiondimension, theRD AM 601mayprovideanerroneousestimateofthemisalignmentdistanceduetoreduced linearityintherelationshipbetweenthemisalignmentdistanceandthedifferenceinresistancesof thefirstresistor602 andthesecondresistor. Ifthewidelength 643isgreaterthan 5timesthe minimum verticalconnection dimension,extraneouscontributionstotheresistances,which are expectedtoincreaseasthewidelength643isincreased,mayreduceaccuracy oftheestimateof themisalignmentdistance.
[0081] A thirdcomponentofthefirstresistanceisfrom thetransitionregion630.Thetransition region630correspondstochangesincurrentdensitybetweenthewideportion605andthenarrow portion607.A transitionwidth644ofthetransitionregion630maybetakenastwiceamaximum ofthefirstwidthincrement638aandthesecondwidthincrement638b.
[0082] A fourthcomponentoftheresistanceisfrom anareaofthenarrow portion607,extending anarrow length645from thetransitionregion630tothenarrow portionverticalconnector615. Thenarrow length 645correspondstothefirstnarrow lengthLinarrofFIG.2. Similarlytothe widelength 643,performanceoftheRDAM 601may furtherbeenhancedbyformingthefirst resistor602 so thatthe narrow length 645 is2 to 5 timesthe minimum verticalconnection dimension. [0083] A fifthcomponentoftheresistanceisfrom anareaofthenarrow portion607underand aroundthenarrow portionverticalconnector615.Asnotedabove,performanceoftheRDAM
601maybeenhancedwhenthefirstresistor602extendspastthenarrow portion607onallsides. [0084] Inthisexample,thefirstresistor602mayhavearectilinearprofileinthetransitionregion 630betweenthewideportion605andthenarrow portion607,inwhichanedgeofthefirstresistor
602hasastraightsegmentatthetransitionfrom thewideportion605tothenarrow portion607, oneachsideofthefirstresistor602;thestraightsegmentsareorientedatrightanglestotheedges ofthefirstresistor602inthewideportion605andthenarrow portion607.Therectilinearprofile mayadvantageouslyfacilitateautomatedlayoutoftheRDAM 601.
[0085] FIG.7isatopview ofanotherexampleresistorofanRDAM,showingplacementof verticalconnectors.TheRDAM 701includesafirstresistor702,andasecondresistor,notshown inFIG.7.Thefirstresistor702includesawideportion705andanarrow portion707adjacentto thewideportion705.
[0086] TheRDAM 701ofthisexampleincludestwowideportionverticalconnectors713aand 713b,arrangedacrossawidthofthefirstresistor702inthewideportion705.Thewideportion verticalconnectors713aand713bcontactaface714ofthefirstresistor702.Thetwowideportion verticalconnectors713aand713b mayprovideamoreconsistentresistanceofthefirstresistor 702,whichmayadvantageouslyprovideamoreaccurateestimateofamisalignmentdistanceby theRDAM 701.
[0087] The wide portion 705 has a firstwidth 706 adjacentto the wide portion vertical connectors713aand713b,onasideofthewideportionverticalconnectors713aand713bfacing thenarrow portion707.Thenarrow portion707hasasecondwidth708adjacenttothenarrow portionverticalconnector715,onasideofthenarrow portionverticalconnector715facingthe wideportion705.Thefirstwidth706isgreaterthanthesecondwidth708.
[0088] TheRDAM 701ofthisexampleincludesasinglenarrow portionverticalconnector715 contacting theface 714 ofthefirstresistor702in thenarrow portion 707. Thesinglenarrow portionverticalconnector715may enableaminimum width ofthefirstresistor702,consistent withthefirstresistor702 extendingpastthenarrow portionverticalconnector715on allsides, whichmayadvantageouslyreduceatotalareaoftheRDAM 701.
[0089] Inthisexample,thefirstresistor702mayhaveaslopededgeprofileinatransitionregion 730betweenthewideportion705andthenarrow portion707.Theslopedprofilemayprovide more consistentpatternsby a photolithographic processused to form the firstresistor 702, advantageouslyprovidingmoreaccurateestimatesofmisalignmentdistancesbytheinstancesof theRDAM 701.
[0090] FIG.8isatopview ofafurtherexampleofaresistorofanRDAM,showingplacement ofverticalconnectors. TheRDAM 801includesafirstresistor802,andasecondresistor,not shown inFIG.8. Thefirstresistor802 includesawideportion 805and anarrow portion 807 adjacenttothewideportion805.
[0091] TheRDAM 801ofthisexampleincludesafirstwideportionverticalconnector813aand asecondwideportionverticalconnector813b,contactingaface814ofthefirstresistor802.The firstwideportionverticalconnector813aandthesecondwideportionverticalconnector813bare arrangedalongadirectionofcurrentflow ofthefirstresistor802inthewideportion 805.The RD AM 801ofthisexampleincludesafirstnarrow portionverticalconnector815aandasecond narrow portionverticalconnector815b,contactingtheface814.Thefirstnarrow portionvertical connector815a and the second narrow portion verticalconnector815b are arranged along a directionofcurrentflow ofthefirstresistor802inthenarrow portion807.
[0092] Thewideportion 805hasafirstwidth806adjacenttothesecondwideportionvertical connector813b,on asideofthesecondwideportionverticalconnector813b facingthenarrow portion807.Thenarrow portion807hasasecondwidth808adjacenttothesecondnarrow portion verticalconnector815b,onasideofthesecondnarrow portionverticalconnector815bfacingthe wideportion805.Thefirstwidth806isgreaterthanthesecondwidth808.
[0093] DuringoperationoftheRDAM 801,thefirstwideportionverticalconnector813aand thefirstnarrow portionverticalconnector815amaybeconnectedtoacurrentsource846,sothat currentflowsthroughthefirstresistor802from thefirstnarrow portionverticalconnector815ato thefirstwideportionverticalconnector813a,asindicatedinFIG.8,orviceversa.Thesecond wideportionverticalconnector813bandthesecondnarrow portionverticalconnector815bmay beconnectedtoanelectricpotentialmeasurementcomponent847,suchasavoltmeterorsourcemeasurementunit(SMU). The electric potentialmeasurement component 847 provides a measurementofthepotentialacrossthefirstresistor802from thesecondnarrow portionvertical connector815btothesecondwideportionverticalconnector813bproducedbythecurrentfrom the currentsource 846. The resistance ofthe firstresistor802 isestimated by dividing the measurementofthe potentialfrom the electricpotentialmeasurementcomponent847 by the currentfrom thecurrentsource846.ThemeasurementtechniqueofFIG.8mayadvantageously reduceunwanted extraneousresistancecontributionsfrom testterminalsand probeequipment, advantageouslyprovidingamoreaccurateestimateofamisalignmentdistancebytheRDAM 801. ThemeasurementtechniqueofFIG.8iscommonlyreferredtoasakelvinmeasurement.
[0094] Inthisexample,thefirstresistor802mayhaveacurvededgeprofileinatransitionregion 830betweenthewideportion 805andthenarrow portion 807.Thecurvedprofilemayprovide evenmoreconsistentpatternsby aphotolithographicprocessusedtoform thefirstresistor802, comparedtorectilinearordiagonalprofileswith sharp corners,advantageously providingmore accurateestimatesofmisalignmentdistancesbytheinstancesoftheRDAM 801.
[0095] FIG.9isatopview ofanexampleofanRD AM,showingstretchedverticalconnectors. TheRDAM 901includesafirstresistor902,andasecondresistor,notshowninFIG.9.Thefirst resistor902 includesawideportion 905and anarrow portion907 adjacenttothewideportion 905.
[0096] TheRDAM 901ofthisexampleincludesawideportionverticalconnector913onaface
914 ofthe firstresistor902 in thewide portion 905,and includesanarrow portion vertical connector915contactingtheface914ofthefirstresistor902inthenarrow portion907.Thewide portionverticalconnector913isseparatedfrom thenarrow portionverticalconnector915by a resistorlength920thatextendsinafirstdirection921from thenarrow portionverticalconnector
915tothewideportionverticalconnector913.Thewideportionverticalconnector913ofthis exampleisastretchedverticalconnectorhavingafirstinlinedimension939aparalleltothefirst direction 921,and afirsttransversedimension 939b perpendiculartothefirstdirection 921,in whichthefirsttransversedimension939bisatleast3timesthefirstinlinedimension939a.The stretchedaspectofthewideportionverticalconnector913mayadvantageouslyreduceunwanted variationsinmeasuredresistanceofthefirstresistor902duringoperationoftheRD AM 901.The narrow portionverticalconnector915ofthisexampleisalsoastretchedverticalconnectorhaving a second inline dimension 940a parallelto the firstdirection 921,and a second transverse dimension940bperpendiculartothefirstdirection921,inwhichthesecondtransversedimension 940bisatleast1.5timesthesecondinlinedimension940a.Thestretchedaspectofthenarrow portionverticalconnector915mayfurtherreduceunwantedvariationsinmeasuredresistanceof thefirstresistor902. [0097] Thewideportion905hasafirstwidth906adjacenttothewideportionverticalconnector 913,on asideofthewideportion verticalconnector913 facing thenarrow portion 907. The narrow portion907hasasecondwidth908adjacenttothenarrow portionverticalconnector915, onasideofthenarrow portionverticalconnector915facingthewideportion905.Thefirstwidth 906isgreaterthanthesecondwidth908.
[0098] In thisexample,thefirstresistor902 may haveastepped edgeprofilein atransition region930betweenthewideportion905andthenarrow portion 907.Thesteppedprofilemay providemoreprocesslatitudeforaphotolithographicprocessusedtoform thefirstresistor902, comparedtorectilinearprofileswithsharpcorners,whilebeingcompatiblewithdesignrulesthat donotallow diagonaledges.
[0099] FIG.10isatopview ofanexampleofataperedresistorofanRDAM.TheRDAM 1001 includesafirstresistor1002,andasecondresistor,notshowninFIG.10.Thefirstresistor1002 hasatapered shape,with awideportion 1005and anarrow portion 1007 adjacenttothewide portion 1005.
[0100] The RDAM 1001 ofthisexample includeswide portion verticalconnectors 1013a, 1013b,and 1013conaface1014ofthefirstresistor1002inthewideportion 1005,andincludes narrow portionverticalconnectors1015aand 1015bcontactingtheface1014ofthefirstresistor 1002inthenarrow portion 1007. Thewideportion 1005hasafirstwidth 1006adjacenttothe wideportionverticalconnectors1013a,1013b,and 1013c,onasideofthewideportionvertical connectors1013a,1013b,and 1013cfacingthenarrow portion 1007. Thenarrow portion 1007 hasasecondwidth 1008adjacenttothenarrow portionverticalconnectors1015aand 1015b,on asideofthenarrow portionverticalconnectors1015aand 1015b facingthewideportion 1005. Thefirstwidth 1006isgreaterthanthesecondwidth 1008.
[0101] Inthisexample,thewideportion1005andthenarrow portion1007maybetakentomeet atamidpointbetween thewideportion verticalconnectors 1013a,1013b,and 1013cand the narrow portionverticalconnectors1015aand1015b.Thewideportion1005hasafirstwidth1006 adjacenttothewideportionverticalconnectors1013athrough1013c,onasideofthewideportion verticalconnectors1013athrough 1013cfacing thenarrow portion 1007. Thenarrow portion 1007hasasecondwidth1008adjacenttothenarrow portionverticalconnectors1015aand1015b, onasideofthenarrow portionverticalconnectors1015aand1015bfacingthewideportion1005. Thefirstwidth 1006isgreaterthanthesecondwidth 1008 [0102] TheRDAM 1001ofthisexamplemaybeusedtoprovideanestimateofamisalignment distanceasdisclosedinreferencetoFIG.2.Thetaperedshapeoffirstresistor1002mayprovide moreuniform currentdensity between thewideportion verticalconnectors1013a,1013b,and 1013candthenarrow portionverticalconnectors1015aand 1015b,whichmay advantageously provide a more accurate estimate ofthe misalignmentdistance,compared to resistorshaving abrupttransitionsbetweentheirwideportionsandnarrow portions.
[0103] Themultiplewideportion verticalconnectors1013a,1013b,and 1013cmay provide moreuniform currentdensityinthewideportion 1005,andthemultiplenarrow portionvertical connectors1015aand 1015b may providemoreuniform currentdensity in thenarrow portion 1007,furtherimprovingtheaccuracyofthemisalignmentdistanceestimate.
[0104] FIG.11isatopview ofan exampleofnon-symmetricshapedresistorsofanRDAM. TheRDAM 1101includesafirstresistor1102andasecondresistor1103.A firstface1114of thefirstresistor1102iscoplanarwithasecondface1117ofthesecondresistor1103.Thefirst resistor1102 hasafirstwideportion 1105and afirstnarrow portion 1107 adjacenttothefirst wideportion1105.Thefirstresistor1102ofthisexamplehasastraightside1148aandastaggered side1148boppositefrom thestraightside1148a.Thestaggeredside1148bmayhavearectilinear form,composed ofstraightedgesmeeting atrightangles,asdepicted in FIG.11,may havea polygonalform,composed ofstraightedgesmeeting atacuteandobtuseangles,ormay havea curvilinearform,composedofstraightandcurvededges.Thus,firstnarrow portion1107isoffset withregardtothefirstwideportion1105,sothatthefirstresistor1102hasanon-symmetricshape. [0105] TheRD AM 1101ofthisexampleincludestwo firstwideportion verticalconnectors 1113aand 1113b,arrangedacrossawidthofthefirstresistor1102inthefirstwideportion 1105. Thefirstwideportionverticalconnectors1113aand 1113bcontactthefirstface1114ofthefirst resistor1102. TheRDAM 1101ofthisexampleincludesasinglefirstnarrow portionvertical connector1115contactingthefirstface1114ofthefirstresistor1102inthefirstnarrow portion 1107.Thefirstwideportionverticalconnectors1113aand 1113b haveafirstinlinedimension 1139aalongafirstdirection1121thatpointsfrom thefirstnarrow portionverticalconnector1115 to thefirstwideportion verticalconnectors1113aand 1113b. Thefirstwideportionvertical connectors1113aand 1113b haveafirsttransversedimension 1139b perpendiculartothefirst direction 1121.Thefirstnarrow portionverticalconnector1115hasasecondinlinedimension 1140aalongthefirstdirection1121andasecondtransversedimension1140bperpendiculartothe firstdirection 1121. Tn this example,the firsttransverse dimension 1139b and the second transversedimension 1140bmaybeequal,andmaybedeterminedbyfabricationguidelinesfora verticalconnectorlevelofwhichthefirstwideportionverticalconnectors1113aand 1113band thefirstnarrow portionverticalconnector1115aremembers.Thesecondinlinedimension1140a maybegreaterthanthefirstinlinedimension 1139a,toprovideaclosermatchbetween ahead resistanceatthefirstnarrow portionverticalconnector1115andaheadresistanceatthefirstwide portionverticalconnectors1113aand 1113b.Theconfigurationofthefirstwideportionvertical connectors 1113a and 1113b and the firstnarrow portion verticalconnector 1115 may be particularlyadvantageousforinstancesofthefirstresistor1102havingasheetresistancelessthan 0.10ohms/square.
[0106] Thefirstwideportion 1105 hasafirstwidth 1106 adjacentto thefirstwideportion verticalconnectors1113aand1113b,onasideofthefirstwideportionverticalconnectors1113a and1113bfacingthefirstnarrow portion 1107.Thefirstnarrow portion 1107hasasecondwidth 1108adjacenttothefirstnarrow portion verticalconnector1115,on asideofthefirstnarrow portionverticalconnector1115facingthefirstwideportion1105.Thefirstwidth 1106isgreater thanthesecondwidth 1108.
[0107] Thesecondresistor1103isaduplicateofthefirstresistor1102having asecondwide portion 1109 and asecond narrow portion 1111adjacentto,and offsetfrom,thesecondwide portion 1109. Thesecondresistor1103hasthesamenon-symmetricshapeasthefirstresistor 1102,reversedindirection.TheRDAM 1101ofthisexampleincludestwosecondwideportion verticalconnectors1116aand 1116bcontactingthesecondface1117inthesecondwideportion 1109,andasinglesecondnarrow portionverticalconnector1118contactingthesecondface1117 inthesecondnarrow portion1111.Thesecondwideportionverticalconnectors1116aand1116b havethesamedimensionsasthefirstwideportionverticalconnectors1113aand 1113b,andthe secondnarrow portionverticalconnector1118hasthesamedimensionsasthefirstnarrow portion verticalconnector1115.
[0108] The secondwideportion 1109 hasathirdwidth 1110,equalto thefirstwidth 1106, adjacenttothesecondwideportionverticalconnectors1116aand 1116b,onasideofthesecond wideportionverticalconnectors1116aand 1116bfacingthesecondnarrow portion 1111. The secondnarrow portion 1111hasafourthwidth 1112,equaltothesecondwidth 1108,adjacentto thesecondnarrow portionverticalconnector1118,onasideofthesecondnarrow portionvertical connector1118facingthesecondwideportion 1109.
[0109] Thesecondresistor1103isreversedin directionfrom thefirstresistor1102,thatis,a seconddirection 1123thatpointsfrom thesecondnarrow portionverticalconnector1118tothe secondwideportionverticalconnectors1116aand1116bisanti-paralleltothefirstdirection1121. Thenon-symmetricshapesofthefirstresistor1102 andthesecondresistor1103may enablea morecompactlayoutoftheRDAM 1101comparedtoresistorhavingsymmetricshapes.
[0110] FIG.12A throughFIG.12E arecrosssectionsofamicroelectronicdevicehavingtwo exampleRDAMs,depictedinstagesofanexamplemethodofformation.ReferringtoFIG.12A, themicroelectronicdevice 1200maybemanifested asany ofthemicroelectronicdevicetypes disclosed in reference to the microelectronic device 100 of FIG.1A and FIG.IB. The microelectronicdevice1200ofthisexampleisformedinandonasubstrate1249.Thesubstrate 1249includesafirstareaforafirstRD AM 1201aandasecondareaforasecondRD AM 1201b. [0111] Thesubstrate 1249includeasemiconductormaterial1250having afirstconductivity type.Inthisexample,thefirstconductivitytypemaybep-type,asindicatedinFIG.12A.A field reliefdielectriclayer1251,commonlyreferredtoasfieldoxide,isformedinandonthesubstrate 1249. Thefieldreliefdielectriclayer1251may beformedby ashallow trenchisolation (STI) processandhavean STIstructureinwhichthefieldreliefdielectriclayer1251isinatrenchin thesemiconductormaterial1250,asdepictedinFIG.12A.Alternatively,thefieldreliefdielectric layer1251maybeformedby alocaloxidationofsilicon(LOCOS)processandhaveaLOCOS structure,in which thefield reliefdielectriclayer1251would havetapered edges,and extend partway into the semiconductormaterial 1250 and extend partway above the semiconductor material1250.
[0112] ThefirstareaforthefirstRD AM 1201aisfreeofthefieldreliefdielectriclayer1251in an areaforafirstresistor1202aandanareaforasecondresistor,notshown.Thefirstresistor 1202aandthesecondresistorarepartsofthefirstRD AM 1201a.A diffusedlayer1252havinga secondconductivitytype,oppositefrom thefirstconductivitytype,isformedinthesemiconductor material1250whereexposedbythefieldreliefdielectriclayer1251.Inthisexample,thesecond conductivitytypemayben-type,asindicatedinFIG.12A.Thediffusedlayer1252isamember ofadiffusedlayerlevelwhichmayhaveanaveragedopantdensityof1x 1018 atoms/cm3 to 1x IO20 atoms/cm3,bywayofexample.Thediffusedlayer1252mayhaveadepthlessthan1micron. The diffused layerlevelmay provide source/drain contactregionsforn-channelmetaloxide semiconductor(NMOS)transistorsand contactregionsforn-typewellsin themicroelectronic device1200.InthefirstareaforthefirstRDAM 1201a,thediffusedlayer1252providesaportion ofthefirstresistor1202aandaportionofthesecondresistor.
[0113] Thefieldreliefdielectriclayer1251may extendoverthesemiconductormaterial1250 inthesecondareaforthesecondRDAM 1201b,asdepictedinFIG.12A.Alternatively,thesecond areaforthesecondRD AM 1201bmaybefreeofthefieldreliefdielectriclayer1251.
[0114] ReferringtoFIG.12B,agatelayer1253isformedoverthesubstrate1249andthefield reliefdielectriclayer1251.Thegatelayer1253isamemberofagatelevelwhosemembersmay providegatesforNMOStransistorsorp-channelmetaloxidesemiconductor(PMOS)transistors inthemicroelectronicdevice1200.Thegatelevelmayprovideresistorsorcapacitorplatesinthe microelectronicdevice1200.Thegatelayer1253mayincludepolycrystallinesilicon,commonly referredtoaspolysilicon.Alternatively,thegatelayer1253mayincludetitanium nitride,tantalum nitride,fully silicidedpolysilicon (FUSI),orotherconductivematerial. Sidewallspacers1254 maybeformedonlateralsurfacesofthegatelayer1253.Thesidewallspacers1254mayinclude siliconnitride,silicondioxide,orsiliconoxynitride,bywayofexample.
[0115] Inthisexample,thefirstareaforthefirstRDAM 1201aisfreeofthegatelayer1253.In thesecond areaforthesecondRDAM 1201b,thegatelayer1253providesaportion ofathird resistor1202bandafourthresistor,notshown.Thethirdresistor1202b andthefourthresistor arepartsofthesecondRDAM 1201b.
[0116] A metalsilicide layer 1255 isformed on exposed silicon ofthe substrate 1249 and exposedpolysiliconinthegatelayer1253. Themetalsilicidelayer1255may includetitanium silicide,cobaltsilicide,ornickelsilicide,bywayofexample.Themetalsilicidelayer1255may beformedbyformingalayerofmetalonthemicroelectronicdevice1200,contactingtheexposed siliconandpolysilicon.Subsequently,thelayerofmetalisheatedtoreactthelayerofmetalwith theexposed silicon and polysilicon to form themetalsilicidelayer1255. Unreacted metalis removedfrom themicroelectronicdevice1200,leavingthemetalsilicidelayer1255inplace.The metalsilicide layer 1255 may provide electricalconnectionsto the gate layer 1253 and the substrate1249.
[0117] InthefirstareaforthefirstRDAM 1201a,themetalsilicidelayer1255onthediffused layer1252providesanotherportionofthefirstresistor1202aandanotherportionofthesecond resistor.TnthesecondareaforthesecondRDAM 1201b,themetalsilicidelayer1255onthegate layer1253providesanotherportionofthethirdresistor1202bandanotherportionofthefourth resistor.
[0118] Thefirstresistor1202aincludesafirstwideportion 1205aand afirstnarrow portion 1207a,accordingtoanyoftheexamplesdisclosedinreferencetoFIG.1A andFIG.IB,FIG.2, andFIG.6throughFIG.11.Thesecondresistorisaduplicateofthefirstresistor1202a,having asecondwideportionandasecondnarrow portion,reversedindirection.Thethirdresistor1202b includesathirdwideportion 1205b and athirdnarrow portion 1207b,accordingto any ofthe examplesdisclosedinreferencetoFIG.1A andFIG.IB,FIG.2,andFIG.6throughFIG.11.The fourthresistorisaduplicateofthethirdresistor1202b,havingafourthwideportionandafourth narrow portion,reversedindirection.
[0119] Referring to FIG.12C,a pre-metaldielectric (PMD)layer 1256 isformed overthe existinglayersofthemicroelectronicdevice1200,coveringthemetalsilicidelayer1255andthe fieldreliefdielectriclayer1251. ThePMD layer1256iselectricallynon-conductive,andmay includeoneormoresublayersofdielectricmaterial.Byway ofexample,thePMD layer1256 mayincludeaPMD liner,notspecifically shown,ofsiliconnitride,contactingthemetalsilicide layer1255andthefield reliefdielectriclayer1251. ThePMD layer1256may alsoincludea planarized layerofsilicon dioxide-based dielectricmaterial,notspecifically shown,ofsilicon dioxide,phosphosilicateglass(PSG),fluorinatedsilicateglass(FSG),orborophosphosilicateglass (BPSG),on thePMD liner. ThePMD layer1256 may furtherincludeaPMD cap layer,not specifically shown,ofsilicon nitride,silicon carbide,orsilicon carbonitride,on theplanarized layer.OtherlayerstructuresandcompositionsforthePMD layer1256arewithinthescopeofthis example.
[0120] Averticalconnectorlevel1219isformedinthePMD layer1256.Theverticalconnector level1219includesafirstwideportionverticalconnector1213aofthefirstRDAM 1201aonthe firstresistor1202ainthefirstwideportion 1205a,andafirstnarrow portionverticalconnector 1215aonthefirstresistor1202ainthefirstnarrow portion 1207a.Thefirstwideportionvertical connector1213aandthefirstnarrow portionverticalconnector1215aareconductiveandextend throughthePMD layer1256tomakeelectricalconnectionstothefirstresistor1202a.Thevertical connectorlevel1219alsoincludessecondwideandnarrow verticalconnectors,notshown,tothe secondresistor.Theverticalconnectorlevel1219furtherincludesathirdwideportionvertical connector1213bofthesecondRDAM 1201bonthethirdresistor1202binthethirdwideportion 1205b,andathirdnarrow portionverticalconnector1215bonthethirdresistor1202binthethird narrow portion 1207b. Thethird wideportion verticalconnector1213b andthethird narrow portionverticalconnector1215bareconductiveandextendthroughthePMD layer1256tomake electricalconnectionstothethirdresistor1202b.Theverticalconnectorlevel1219alsoincludes fourth wide and narrow verticalconnectors,notshown,to the fourth resistor. The vertical connectorlevel1219 also includesotherverticalconnectors,notshown,thatprovideelectrical connectionstocomponentssuchasNMOStransistorsandPMOStransistorsofthemicroelectronic device1200.Theverticalconnectorsoftheverticalconnectorlevel1219arecommonlyreferred to as contacts. The verticalconnectors ofthe verticalconnectorlevel 1219 may include a liner/barrieroftitanium andtitanium nitrideandacoremetaloftungsten,asindicatedinFIG.12C. Otherstructuresfortheverticalconnectorsoftheverticalconnectorlevel1219arewithinthescope ofthisexample.
[0121] ReferringtoFIG.12D,afirstinterconnectlevel1258isformedonthePMD layer1256 andtheverticalconnectorlevel1219.Thefirstinterconnectlevel1258includesafirsttestterminal 1224aconnectedtothefirstwideportionverticalconnector1213aofthefirstRD AM 1201aand asecondtestterminal1224bconnectedtothefirstnarrow portionverticalconnector1215aofthe firstRDAM 1201a.Thefirstinterconnectlevel1258alsoincludesthirdandfourthtestterminals connected to theverticalconnectorson the second resistor. Thefirstinterconnectlevel1258 furtherincludesafifthtestterminal1224cconnectedtothethirdwideportionverticalconnector 1213bofthesecondRDAM 1201bandasixthtestterminal1224dconnectedtothethirdnarrow portionverticalconnector1215bofthesecondRDAM 1201b.Thefirstinterconnectlevel1258 alsoincludesseventhandeighthtestterminalsconnectedtotheverticalconnectorsonthefourth resistor.Formingthetestterminals1224athrough1224dandthetestterminalsonthesecondand fourthresistorsenablesthefirstRDAM 1201aandthesecondRDAM 1201btobetestedafterthe first interconnect level 1258 is formed, without having to wait for fabrication of the microelectronicdevice1200tobecompleted.
[0122] Thefirstinterconnectlevel1258alsoincludesfirstinterconnects,notshown,thatprovide electrical connections between components of the microelectronic device 1200. The first interconnectsofthefirstinterconnectlevel1258areconductiveandmakeelectricalconnections tothecontactsoftheverticalconnectorlevel1219.Thefirstinterconnectsandtestterminalsof thefirstinterconnectlevel1258mayhaveanetchedaluminum structure,withanadhesionlayer, notspecifically shown,oftitanium nitride ortitanium tungsten,on the PMD layer 1256,an aluminum layer,notspecificallyshown,withafew atomicpercentofsilicon,titanium,orcopper, on the adhesion layer,and abarrierlayer,notspecifically shown,oftitanium nitride on the aluminum layer.Inanotherversionofthisexample,thefirstinterconnectsandtestterminalsmay haveadamascenestructure,withabarrierlineroftantalum andtantalum nitrideinaninterconnect trenchin anintra-metaldielectric(IMD)layer,notspecifically shown,onthePMD layer1256, withacoppercoremetalintheinterconnecttrenchonthebarrierliner.Otherstructuresforthe firstinterconnectsandtestterminalsofthefirstinterconnectlevel1258arewithinthescopeof thisexample
[0123] ReferringtoFIG.12E,aninter-layerdielectric(ILD)layer1259maybeformedoverthe firstinterconnectlevel1258.TheILD layer1259mayincludeanetchstoplayer,notspecifically shown,ofsiliconnitrideorsiliconcarbonitrideontheinterconnectsofthefirstinterconnectlevel 1258andthePMD layer1256.TheILD layer1259mayalsoincludeaplanarizedlayerofsilicon dioxide-based dielectricmaterial,notspecifically shown,ofsilicon dioxide,PSG,FSG,BPSG, organosilicateglass(OSG),carbon-dopedoxide(CDO),orotherlow-kdielectricmaterial,onthe etch stoplayer.TheILD layer1259mayfurtherincludeastoplayerofsiliconnitrideorsilicon carbonitrideontheplanarizedlayerofsilicon dioxide-baseddielectricmaterial. Thestoplayer may provide an etch stop layerfor subsequently-formed etch aluminum interconnects,or a chemicalmechanicalpolish (CMP)stop layerforsubsequently-formed etch copperdamascene interconnects.
[0124] Avialayer1260isformedintheILD layer1259.Thevialayer1260includesvias1261 throughtheILD layer1259,thatmakeelectricalconnectionstothetestterminals1224athrough 1224d,aswellasadditionalvias,notshown,thatmakeelectricalconnectionstothetestterminals on the second and fourth resistorsofthefirstand second RDAMs 1201a and 1201b and the additionalinterconnects,notshown,ofthefirstinterconnectlevel1258.Theverticalconnectors ofthe via layer 1260 are commonly referred to ascontacts. The vias 1261 may include a liner/barrieroftitanium andtitanium nitrideandacoremetaloftungsten.Alternatively,thevias 1261mayincludealiner/barrieroftantalum andtantalum nitrideandacoremetalofcopper.Other structuresforthevias1261arewithinthescopeofthisexample. [0125] A secondinterconnectlevel1262isformedontheTLD layer1259andthevialayer1260. The second interconnectlevel1262 includesuppertestterminals 1263 connected to thetest terminals1224athrough1224dandthetestterminalsonthesecondandfourthresistorsofthefirst andsecondRDAMs1201aand1201b,throughthevias1261.Thesecondinterconnectlevel1262 also includessecond interconnects,notshown,coupled to componentsin themicroelectronic device 1200. Theuppertestterminals1263 andthesecondinterconnectsmay havean etched aluminum structure,acopperdamascenestructure,orotherstructure. In someversionsofthis example,thevialayer1260andthesecondinterconnectlevel1262maybeformedby acopper dualdamasceneprocess,with acommon lineroftantalum andtantalum nitrideand acommon coppercoremetalin thevias1261andtheuppertestterminals1263. Forming theuppertest terminals1263enablesthefirstRDAM 1201aandthesecondRD AM 1201btobetestedafterthe second interconnect level 1262 is formed,without having to wait for fabrication of the microelectronic device 1200 to be completed. Additionaltestterminals may be formed in successiveinterconnectlevelsand abond pad layer,enabling thefirstRDAM 1201aand the secondRD AM 1201btobetestedatvariousstagesofthefabricationprocess.
[0126] ThefirstRDAM 1201aenablesestimationofamisalignmentdistancebetweenmembers ofaconductorlevelcontainingthefirstresistor1202aandmembersoftheverticalconnectorlevel 1219.ThesecondRD AM 1201benablesestimationofamisalignmentdistancebetweenmembers ofaconductorlevelcontaining thethirdresistor1202b andmembersoftheverticalconnector level1219.
[0127] FIG.13 depictsamicroelectronicdevicehavingtwoexampleRDAMswhich may be used to estimate misalignmentbetween members oftwo successive conductor levels. The microelectronicdevice1300includesafirstconductorlevel1304,averticalconnectorlevel1319, and a second conductorlevel1364. Thefirstconductorlevel1304 includesfirstconductive elements,andmaybemanifestedasany oftheexamplesdisclosedinreferencetotheconductor level104ofFIG.1A.Thesecondconductorlevel1364includessecondconductiveelements,and issuccessivetothefirstconductorlevel1304,thatis,thesecondconductorlevel1364isformed afterthefirstconductorlevel1304.Theverticalconnectorlevel1319includesconductivevertical connectorswhichextendfrom thefirstconductiveelementstothesecondconductiveelements.
[0128] ThefirstRDAM 1301aincludesafirstresistor1302aandasecondresistor1303a,both in thefirstconductorlevel1304. Thesecond resistor1303aisaduplicateofthefirstresistor 1302a,reversedindirection.Thefirstresistor1302aandthesecondresistor1303amayhaveany oftheshapesandpropertiesdisclosedinreferencetotheexamplesofFIG.1A andFIG.IB,FIG. 2,andFIG.6throughFIG.11.ThefirstRDAM 1301aincludesfirstverticalconnectors1313aof theverticalconnectorlevel1319onupperfaces1314aand 1317aofthefirstresistor1302aand thesecondresistor1303a,respectively,asdisclosedinreferencetotheexamplesofFIG.1A and FIG.IB.FIG.13showstwoinstancesofthefirstverticalconnectors1313aoneachofthefirst resistor 1302a and the second resistor 1303a;the firstRDAM 1301a may include additional instancesofthefirstverticalconnectors1313aoneachofthefirstresistor1302aandthesecond resistor1303a.Themicroelectronicdevice1300includesfirsttestterminals1324acoupledtothe firstverticalconnectors1313a,asdisclosedinreferencetoFIG.1A.Thefirsttestterminals1324a may be instancesofthe second conductive elementsofthe second conductorlevel1364,as indicated in FIG.13. Alternatively,thefirsttestterminals1324amay beelementsofanother conductorlevelofthemicroelectronicdevice 1300. ThefirstRDAM 1301amay beused to estimateafirstmisalignmentdistancebetweenthefirstconductiveelementsofthefirstconductor level1304andtheverticalconnectorsoftheverticalconnectorlevel1319,asdisclosedinreference toFIG.2.
[0129] ThesecondRDAM 1301b includesathirdresistor1302b and afourthresistor1303b, both in thesecond conductorlevel1364. Thefourth resistor1303b isaduplicateofthethird resistor1302b,reversedindirection.Thethirdresistor1302b andthefourthresistor1303bmay haveanyoftheshapesandpropertiesdisclosedinreferencetotheexamplesofFIG.1A andFIG. IB,FIG.2,and FIG.6 through FIG.11. The secondRDAM 1301b includessecondvertical connectors1313boftheverticalconnectorlevel1319contactinglowerfaces1314band1317bof thethirdresistor1302bandthefourthresistor1303b,respectively.FIG.13showstwoinstances ofthesecondverticalconnectors1313bcontactingeachofthethirdresistor1302bandthefourth resistor1303b;thesecondRDAM 1301bmayincludeadditionalinstancesofthesecondvertical connectors1313b contactingeachofthethirdresistor1302bandthefourthresistor1303b.The lowerfaces1314band 1317bofthethirdresistor1302bandthefourthresistor1303bareparallel to,butnotcoplanarwith,theupperfaces1314aand1317aofthefirstresistor1302aandthesecond resistor1303a.Thefirstverticalconnectors1313aandthesecondverticalconnectors1313bhave upperendswhicharecoplanarwiththelowerfaces1314b and 1317bofthethirdresistor1302b andthefourthresistor1303b,andhavelowerendswhicharecoplanarwiththeupperfaces1314a and1317aofthefirstresistor1302aandthesecondresistor1303a.Tnthisexample,endsofvertical connectorsarecoplanarwithfacesofresistorswhentheendsoftheverticalconnectorscontactthe resistorsatthefaces,recognizingtheverticalconnectorsmayextendintotheresistorsasaresult offabricationprocessesusedtoform theverticalconnectorsandtheresistors.
[0130] The second RDAM 1301b ofthisexample furtherincludeslateralconnectors 1365, whichmaybemembersofthefirstconductorlevel1304.Thesecondverticalconnectors1313b contactthelateralconnectors1365. Thelateralconnectors1365extendlaterally pastthethird resistor1302b and thefourth resistor1303b. The secondRDAM 1301b ofthisexamplealso includesthirdverticalconnectors1366oftheverticalconnectorlevel1319thatcontactthelateral connectors1365.Themicroelectronicdevice1300includessecondtestterminals1324bcoupled tothethirdverticalconnectors1366,sothatthesecondtestterminals1324b arecoupledtothe thirdresistor1302bandthefourthresistor1303bthroughthesecondverticalconnectors1313b, thelateralconnectors1365,andthethirdverticalconnectors1366. Thesecondtestterminals 1324bmaybeinstancesofthesecondconductiveelementsofthesecondconductorlevel1364,as indicatedinFIG.13.Alternatively,thesecondtestterminals1324bmaybeelementsofanother conductorlevelofthemicroelectronicdevice 1300. ThesecondRDAM 1301b maybeusedto estimateasecondmisalignmentdistancebetweenthesecondconductiveelementsofthesecond conductorlevel1364andtheverticalconnectorsoftheverticalconnectorlevel1319.Theestimate ofthefirstmisalignmentdistanceandtheestimateofthesecondmisalignmentdistancemaybe combinedtoprovideanestimateofmisalignmentbetweenthesecondconductiveelementsofthe secondconductorlevel1364andthefirstconductiveelementsofthefirstconductorlevel1304, which may be usefulwith regard to componentsthatinclude instances ofboth the second conductorlevel1364andthefirstconductorlevel1304,such ascapacitorsandinductorsinan interconnectregionofthemicroelectronicdevice1300.
[0131] FIG.14A throughFIG.14H aretopviewsandcrosssectionsofamicroelectronicdevice withanRDAM forestimatingamisalignmentdistancebetweenviasandinterconnectsofacopper dualdamascenestructure,depictedin stagesofan examplemethod offormation. Referring to FIG.14A,atopview,andFIG.14B,acrosssection,themicroelectronicdevice1400includesa firstdielectriclayer1456.Bywayofexample,thefirstdielectriclayer1456maybemanifested asaPMD layeroranILD layerofthemicroelectronicdevice1400. [0132] A firstlateralconnector1465aandasecondlateralconnector1465boftheRDAM 1401 areformedinoronthefirstdielectriclayer1456.Thelateralconnectors1465aand 1465bmay haveadamascenestructure,andmayincludeafirstbarrierliner1467oftantalum andtantalum nitrideininterconnecttrenches1468inthefirstdielectriclayer1456,withafirstcoppercoremetal 1469in theinterconnecttrenches1468 onthefirstbarrierliner1467. Otherstructuresforthe lateralconnectors1465aand 1465b,suchasetchedaluminum structures,arewithinthescopeof thisexample.Thelateralconnectors1465aand 1465bareformedconcurrentlywithotherlateral conductors,suchasinterconnects,ofthemicroelectronicdevice1400.
[0133] ReferringtoFIG.14C,atopview,andFIG.14D,acrosssection,asecond dielectric layer1459 isformed overthefirstdielectriclayer1456 and thelateralconnectors 1465aand 1465b.Theseconddielectriclayer1459maybemanifestedasanILD layerofthemicroelectronic device1400.
[0134] A viaetch mask 1470 isformed overthe second dielectriclayer1459,exposing the seconddielectriclayer1459inareasoverthelateralconnectors1465aand1465bforafirstvertical connector1413,asecond verticalconnector1415,afirsttestterminalconnector1466a,and a second testterminalconnector1466b oftheRDAM 1401,aswellasvias,notshown,ofthe microelectronic device 1400. The verticalconnectors 1413 and 1415 and the testterminal connectors1466aand 1466bareshowninFIG.14G andFIG.14H.Theviaetchmask 1470may includephotoresistandmaybeformedbyaphotolithographicprocess.Theviaetchmask 1470 mayincludeanti-reflectionmaterialsuchasbottom anti-reflectioncoat(BARC),andmayinclude hardmaskmaterialsuchasamorphouscarbon.
[0135] A partialviaetchprocessisperformedwhichremovesdielectricmaterialfrom thesecond dielectriclayer1459whereexposedby theviaetch mask 1470,toform viaholes1471in the second dielectric layer 1459 forthe verticalconnectors 1413 and 1415 and the testterminal connectors1466aand1466b,aswellastheviasofthemicroelectronicdevice1400.Theviaholes 1471extendpartwaytothelateralconnectors1465aand 1465b.Thepartialviaetchprocessmay beimplementedasatimedreactiveionetch(RIE)processusingfluorineradicals.
[0136] Afterthepartialvia etch processiscompleted,theviaetch mask 1470 isremoved. Organicmaterialandamorphouscarbonintheviaetchmask 1470mayberemovedbyanoxygen plasmaprocess,followedbyawetcleanprocess,bywayofexample. [0137] ReferringtoFIG.14E,atopview,andFIG.14F,acrosssection,atrenchetchmask1472 isformedovertheseconddielectriclayer1459,exposingtheseconddielectriclayer1459inan areaoverthelateralconnectors1465aand1465bforafirstresistor1402,afirsttestterminal1424a, andasecondtestterminal1424boftheRDAM 1401,aswellasinterconnects,notshown,ofthe microelectronicdevice1400.Thefirstresistor1402andthetestterminals1424aand 1424b are showninFIG.14G andFIG.14H.Thetrenchetchmask 1472mayincludephotoresist,formed byaphotolithographicprocess,andmayincludeanti-reflectionmaterialandhardmaskmaterial.
[0138] A trench etchprocessisperformedwhichremovesdielectricmaterialfrom thesecond dielectriclayer1459whereexposedbythetrenchetchmask1472,toform aresistortrench1473a, afirsttestterminaltrench 1473b,andasecondtestterminaltrench 1473cintheseconddielectric layer1459forthefirstresistor1402,thefirsttestterminal1424a,andthesecondtestterminal 1424b,respectively,shown inFIG.14G andFIG.14H,andto form interconnecttrenches,not shown,fortheinterconnectsofthemicroelectronicdevice1400.Thetrenches1473a,1473b,and 1473cextendpartwaytothelateralconnectors1465aand1465bandthefirstdielectriclayer1456. [0139] Thetrench etch processalso removesadditionaldielectricmaterialfrom the second dielectriclayer1459undertheviaholes1471,sothattheviaholes1471extendtothelateral connectors1465aand 1465bwhenthetrenchetchprocessiscompleted.Thetrenchetchprocess mayincludeanetchstopremovaloperationtoclearanetchstoplayerintheseconddielectriclayer 1459.ThetrenchetchprocessmaybeimplementedasatimedRIE processusingfluorineradicals. Afterthetrenchetchprocessiscompleted,thetrenchetchmask 1472isremoved.
[0140] ReferringtoFIG.14G,atopview,andFIG.14H,acrosssection,asecondbarrierliner 1474isformedinthetrenches1473a,1473b,and1473candtheviaholes1471.Thesecondbarrier liner1474mayincludetantalum andtantalum nitride,andmaybeformedby sputteringtantalum ontothe second dielectriclayer1459,and ontothelateralconnectors1465aand 1465b where exposedbytheviaholes1471,followedbyformingtantalum nitridebyanatomiclayerdeposition (ALD)processonthetantalum.Thesecondbarrierliner1474extendsontoatop surfaceofthe seconddielectriclayer1459.
[0141] A secondcoppercoremetal1475isformedonthesecondbarrierliner1474,fillingthe trenches1473a,1473b,and 1473candtheviaholes1471,andextendingoverthetopsurfaceof theseconddielectriclayer1459.Thesecondcoppercoremetal1475maybeformedbysputtering aseedlayerofcopperonthesecondbarrierliner1474,followedbyelectroplatingcopperonthe seed layer. Additivessuch asinhibitorsand levelersmay beaddedto aplating bath used for electroplatingthecopper,toreducevoidsintheviaholes1471andtoreducean amountofthe copper1475extendingoverthetopsurfaceoftheseconddielectriclayer1459.Subsequently,the secondcoppercoremetal1475andthesecondbarrierliner1474overthetopsurfaceofthesecond dielectriclayer1459,outsideofthetrenches1473a,1473b,and 1473c,areremovedby acopper CMP process,leavingthesecondcoppercoremetal1475andthesecondbarrierliner1474inthe trenches1473a,1473b,and 1473candtheviaholes1471,toprovidethefirstresistor1402,the firsttestterminal1424a,the second testterminal1424b,thefirstverticalconnector1413,the secondverticalconnector1415,thefirsttestterminalconnector1466a,andthesecondtestterminal connector1466b. Thefirstresistor1402,withthefirstverticalconnector1413 andthesecond verticalconnector1415arereferredto asacopperdualdamascenestructure. Thefirstresistor 1402hasafirstwideportion 1405andafirstnarrow portion 1407.Thefirstverticalconnector 1413 contactsthe firstresistor 1402 in the firstwide portion 1405,and the second vertical connector1415contactsthefirstresistor1402inthefirstnarrow portion 1407.
[0142] Thetestterminals1424aand1424barecoupledtothefirstresistor1402throughthetest terminalconnectors 1466a and 1466b,the lateralconnectors 1465a and 1465b,the vertical connectors 1413 and 1415. Concurrently with these conductive elements,additionallateral connectors,a second resistor,additionalvertical connectors,additionaltestterminals,and additionaltestterminalconnectors,notshown,areformedaspartoftheRDAM 1401.Thesecond resistorisaduplicateofthefirstresistor1402,reversedindirection. TheRDAM 1401maybe usedtoestimateamisalignmentdistancebetweenaninterconnectthefirstresistor1402andthe verticalconnectors1413and1415.
[0143] FIG.15A throughFIG.15D arecrosssectionsofamicroelectronicdevicethatincludes two additionalexampleRDAMsinvolving aresistorand acapacitor,depicted in stagesofan examplemethodofformation.ReferringtoFIG.15A,themicroelectronicdevice 1500maybe manifestedasanyofthemicroelectronicdevicetypesdisclosedinreferencetothemicroelectronic device100ofFIG.1A andFIG.IB.Themicroelectronicdevice1500ofthisexampleisformed inandonasubstrate1549.Thesubstrate1549includesafirstareaforafirstRDAM 1501aanda secondareaforasecondRDAM 1501b.Insomeversionsofthisexample,thesubstrate1549may beimplementedasadielectriclayer,suchasaPMD layeroranILD layer,inthefirstareafora firstRDAM 1501aandinthesecondareaforasecondRDAM 1501b.Inotherversionsofthis example,the substrate 1549 may beimplemented asa semiconductormaterialora dielectric materialinthefirstareaforafirstRDAM 1501a,andmaybeimplementedasthesamematerial oradifferentsemiconductormaterialoradielectricmaterialinthesecondareaforasecondRDAM 1501b.
[0144] In thefirstareaforafirstRD AM 1501a,alowerconductor1576 isformed overthe substrate1549,andacapacitordielectriclayer1577isformedoverthelowerconductor1576.A firstupperplateresistor1502aofthefirstRD AM 1501aisformedoverthecapacitordielectric layer1577. Thelowerconductor1576 may bean elementofafirstinterconnectlevelofthe microelectronicdevice1500.Thecapacitordielectriclayer1577maybepartofananti-reflection layerusedtopatternthefirstinterconnectlevel,includingthelowerconductor1576. Thefirst upper plate resistor 1502a may be an element of an upper capacitor plate level of the microelectronicdevice1500.Thelowerconductor1576,thecapacitordielectriclayer1577,and thefirstupperplateresistor1502amaybeformedbyaprocesssequencethatincludesformingan interconnectmetallayerforthefirstinterconnectlevelonthesubstrate1549. Theinterconnect metallayermayincludeanadhesionlayer,notspecificallyshown,oftitanium nitrideortitanium tungsten,onthesubstrate 1549,an aluminum layer,notspecifically shown,with afew atomic percentofsilicon,titanium,orcopper,ontheadhesionlayer,andabarrierlayer,notspecifically shown,oftitanium nitride on the aluminum layer,similarto thefirstinterconnectlevel1258 disclosed in referenceto FIG.12D. The processsequence iscontinued by forming an antireflectionlayerovertheinterconnectmetallayer,beforetheinterconnectmetallayerispatterned. Theanti-reflectionlayermayincludealowersub-layer,notspecificallyshown,ofsilicondioxide immediately overtheinterconnectmetallayer,amiddle sub-layer,notspecifically shown,of siliconnitrideoverthelowersub-layer,andanuppersub-layer,notspecificallyshown,ofsilicon dioxideoverthemiddlesub-layer. Theprocesssequenceiscontinuedby forming acapacitor upperplatelayerovertheanti-reflectionlayer,beforetheinterconnectmetallayerispatterned. Thecapacitorupperplatelayermay includean adhesion sub-layeroftitanium andamain sublayeroftitanium nitride.Thecapacitorupperplatelayeristhenpatternedtoform thefirstupper plateresistor1502aconcurrently with upperplatesofcapacitorsofthemicroelectronicdevice 1500,byanRIE processusinghalogenradicals.Patterningofthecapacitorupperplatelayeris performed so astoleaveasufficientthicknessoftheanti-reflectionlayerovertheinterconnect metallayertoprovideananti-reflectionfunctionality.Theinterconnectmetallayerispatterned, usingaphotolithographicprocessthatisfacilitatedbytheanti-reflectionlayer,andanRTEprocess usingchlorineradicals,toform thelowerconductor1576,lowercapacitorplatesforthecapacitors, and interconnectsofthefirstinterconnectlevel. Theanti-reflection layermay beleftoverthe lowerconductor1576,lowercapacitorplates,andinterconnects,asindicatedinFIG.15A.
[0145] Thefirstupperplateresistor1502aincludesafirstwideportion1505aandafirstnarrow portion 1507a.Thefirstupperplateresistor1502amayhaveanyoftheconfigurationsdisclosed in referencetoFIG.6throughFIG.11. A secondupperplateresistor,notshown,ofthefirst RDAM 1501aisformedconcurrentlywiththefirstupperplateresistor1502a.Thesecondupper plateresistorisaduplicateofthefirstupperplateresistor1502a,reversedindirection.
[0146] In thisexample,the second areafora second RDAM 1501b may beleftfreeofthe interconnect metal layer, the anti-reflection layer, and the capacitor upper plate layer. Alternatively,one ormore interconnects ofthe firstinterconnectlevel,with accompanying overlayersoftheanti-reflection layer,may beformed in the second areafora secondRDAM 1501b.
[0147] Referring to FIG. 15B,a first ILD sub-layer 1559a is formed over the existing microelectronicdevice1500.ThefirstILD sub-layer1559amayincludeanetch stoplayer,not specifically shown,ofsilicon nitrideand aplanarized main layer,notspecifically shown,ofa silicondioxide-baseddielectricmaterialontheetchstoplayer.ThefirstILD sub-layer1559amay includeacaplayer,notspecificallyshown,ofsiliconnitride,overtheplanarizedmainlayer.
[0148] A firstthinfilm resistor1502bofthesecondRDAM 1501bisformedoverthefirstILD sub-layer1559a. Thefirstthin film resistor1502b maybepartofaresistorlevelthatincludes additionalthin film resistorsused in circuitsofthe microelectronic device 1500. By way of example,the firstthin film resistor 1502b may include alloysofnickel,chromium,titanium, tantalum,molybdenum,silicon,and any metalsofthe platinum group (ruthenium,rhodium, palladium,osmium,iridium,andplatinum).Thefirstthinfilm resistor1502bmayincludeother elements,suchasaluminum,copper,oxygen,nitrogen,orcarbon,toimpartdesiredpropertiesto thefirstthin film resistor1502b. Othercompositionsforthefirstthin film resistor1502b are withinthescopeofthisexample.
[0149] Thefirstthin film resistor1502b includesasecondwideportion 1505b and asecond narrow portion 1507b. Thefirstthin film resistor1502b may have any oftheconfigurations disclosedinreferencetoFIG.6throughFIG.11.A secondthinfilm resistor,notshown,ofthe secondRDAM 1501bisformedconcurrentlywiththefirstthinfilm resistor1502b.Thesecond thinfilm resistorisaduplicateofthefirstthinfilm resistor1502b,reversedindirection.
[0150] Referring to FIG.15C,a second ILD sub-layer 1559b isformed overthe existing microelectronicdevice 1500. ThesecondILD sub-layer1559b may includean etch stoplayer, notspecificallyshown,ofsiliconnitrideandaplanarizedmainlayer,notspecificallyshown,ofa silicondioxide-baseddielectricmaterialontheetchstoplayer.ThesecondILD sub-layer1559b mayincludeaCMP stoplayer,notspecifically shown,ofsiliconnitrideorsilicon carbonitride, overtheplanarizedmainlayer.
[0151] A firstdeepverticalconnector1513aand asecond deepverticalconnector1515aare formedthroughthesecondILD sub-layer1559bandthefirstILD sub-layer1559atomakecontact tothefirstupperplateresistor1502ainthefirstwideportion 1505aandthefirstnarrow portion 1507a,respectively.Concurrently,athirddeepverticalconnector,notshown,andafourthdeep verticalconnector,notshown,areformedthroughthesecondILD sub-layer1559b andthefirst ILD sub-layer1559atomakecontacttothesecondupperplateresistor.
[0152] A firstshallow verticalconnector1513bandasecondshallow verticalconnector1515b areformedthroughthesecondILD sub-layer1559btomakecontacttothefirstthinfilm resistor 1502b in the second wideportion 1505b and the second narrow portion 1507b ,respectively. Concurrently,a third shallow verticalconnector,not shown,and a fourth shallow vertical connector,notshown,areformedthroughthesecondILD sub-layer1559btomakecontacttothe secondthinfilm resistor.
[0153] Theshallow verticalconnectors1513band1515bmaybeformedconcurrentlywiththe deep verticalconnectors 1513a and 1515a,ormay be formed separately. The deep vertical connectors1513aand 1515amaybepartofadeepvialevelofthemicroelectronicdevice1500, andmaybeformedby any oftheprocessesdisclosedinreferencetoviasherein. Similarly,the shallow vertical connectors 1513b and 1515b may be part of a shallow via level of the microelectronicdevice1500,andmaybeformedbyanyoftheprocessesdisclosedinreferenceto viasherein.
[0154] ReferringtoFIG.15D,afirstwideportiontestterminal1524aisformedonthesecond ILD sub-layer1559btomakecontacttothefirstdeepverticalconnector1513a,andafirstnarrow portiontestterminal1524bisformedonthesecondILD sub-layer1559btomakecontacttothe seconddeepverticalconnector1515a.A secondwideportiontestterminal1524cisformedon thesecondILD sub-layer1559btomakecontacttothefirstshallow verticalconnector1513b,and asecondnarrow portiontestterminal1524disformedonthesecondILD sub-layer1559btomake contacttothesecondshallow verticalconnector1515b.Additionaltestterminalsareformedon thesecondILD sub-layer1559btomakecontacttotheverticalconnectorsonthesecondupper plateresistorandthesecondthinfilm resistor.Thetestterminals1524athrough 1524dandthe additionaltestterminalsmaybepartofaninterconnectlevelofthemicroelectronicdevice1500. Thetestterminals1524athrough 1524dmay haveanetchedaluminum structureormay havea copperdamascenestructure.Otherstructuresforthetestterminals1524athrough1524darewithin thescopeofthisexample.
[0155] The firstRDAM 1501a enablesestimation ofa firstmisalignmentdistancebetween membersofthedeepvialevelwithrespecttomembersoftheuppercapacitorplatelevelofthe microelectronic device 1500. The second RDAM 1501b enables estimation of a second misalignmentdistancebetweenmembersoftheshallow vialevelwithrespecttomembersofthe thinfilm resistivelevelofthemicroelectronicdevice1500.
[0156] FIG.16A through FIG.16C are crosssectionsofa microelectronic devicewith an exampleRDAM involving bond pads,depictedin stagesofan examplemethod offormation. Referring to FIG.16A,the microelectronic device 1600 may be manifested as any ofthe microelectronicdevicetypesdisclosedinreferencetothemicroelectronicdevice100ofFIG.1A andFIG.IB.Themicroelectronicdevice1600ofthisexampleincludesatopdielectriclayer1659. Inoneversionofthisexample,thetopdielectriclayer1659maybeimplementedasanILD layer, andmayhavethestructureandcompositiondisclosedinreferencetotheILD layer1259ofFIG. 12E,forexample. In anotherversion ofthisexample,thetop dielectric layer 1659 may be implementedasacaplayeroveratopinterconnectlevel,andmayincludesilicondioxide,silicon nitride,siliconoxynitride,orpolyimide,byway ofexample.Othercompositionsandstructures forthetopdielectriclayer1659arewithinthescopeofthisexample.
[0157] A firstlateralconnector1665aandasecondlateralconnector1665b areformedonthe topdielectriclayer1659inanareafortheRDAM 1601.Thelateralconnectors1665aand 1665b areelectricallyconductive,andarepartofaconductorlevelofthemicroelectronicdevice1600. A thirdlateralconnector,notshown,andafourthlateralconnector,notshown,oftheRDAM 1601 areformed concurrently with thelateralconnectors 1665aand 1665b. In oneversion ofthis example,theconductorlevel,includingthelateralconnectors1665aand 1665b,maybepartofa top interconnectlevelofthemicroelectronicdevice 1600,and may have an etched aluminum structure,acopperdamascenestructure,oraplatedstructure,bywayofexample.Interconnects having aplated structuremay includean adhesion layer,notshown,onthetop dielectriclayer 1659,withcopperinterconnectsontheadhesionlayer.Theplatedinterconnectsmaybeformed bysputteringtheadhesionlayer,containingtitanium,onthetopdielectriclayer1659,followedby sputteringaseedlayer,notshown,ofcopperontheadhesionlayer.A platingmaskisformedon theseedlayerthatexposesareasfortheinterconnectsandthelateralconnectors1665aand1665b. Theplatedinterconnectsareformedbyelectroplatingcopperontheseedlayerwhereexposedby theplatingmask.Theplatingmaskisremoved,andtheseedlayerandtheadhesionlayerbetween theinterconnectsareremovedbywetetching.Inanotherversionofthisexample,theconductor level,includingthelateralconnectors1665aand1665b,maybepartofaninput/output(I/O)pad levelofthemicroelectronicdevice1600,tobeconnectedtoanRDL.Theinput/outputpadlevel mayhaveaplatedstructure.
[0158] Referring toFIG.16B,aprotectiveovercoat(PO)layer 1678isformed overthetop dielectriclayer1659 andthelateralconnectors1665aand 1665b. ThePO layer1678isnon- conductive,andmay includeoneormorelayersofdielectricmaterial,such assilicon dioxide, silicon nitride,silicon oxynitride,aluminum oxide,polyimide,benzocyclobutene (BCB),or polybenzoxazole(PBO),bywayofexample.I/O padopenings1679extendthroughthePO layer 1678,exposing thelateralconnectors 1665a and 1665b. TheI/O pad openings 1679 may be formedbyanetchprocessaftertheoneormorelayersofdielectricmaterialofthePO layer1678 areformed.Alternatively,theI/O padopenings1679maybeformedaspartsoftheoneormore layersofdielectricmaterial,byaphotolithographicprocessforphotosensitivedielectricmaterial, suchasphotosensitivepolyimide.
[0159] Referring to FIG. 16C, a top conductor level 1604 is formed on the existing microelectronicdevice1600,withtopconductormetalextendingoverthePO layer1678andinto theI/O pad openings 1679 to make connectionsto the conductorlevel,including the lateral connectors1665aand 1665b.Inoneversionofthisexample,thetopconductorlevel1604may beimplementedasabondpadlevel,andmayincludeanadhesionsublayeroftitanium ortitanium tungsten,mayincludeapadsublayerofnickelorpalladium,andmayincludeabonding surface metalofaluminum,gold,orplatinum,bywayofexample.Inanotherversionofthisexample,the topconductorlevel1604maybeimplementedasanRDL,andmayhaveaplatedstructure. [0160] Thetop conductorlevel1604includesafirstresistor1602 ofthetop conductorlevel 1604.Thefirstresistor1602hasafirstwideportion 1605andafirstnarrow portion 1607.The firstwideportion 1605extendsaroundoneoftheI/O padopenings1679,andthetopconductor levelmetalextendingintothatI/O padopening1679providesafirstverticalconnector1613from thefirstwideportion 1605tothefirstlateralconnector1665a. Thefirstnarrow portion 1607 extendsaroundanotheroftheI/O padopenings1679,andthetopconductorlevelmetalextending intothatI/O padopening 1679providesasecondverticalconnector1615from thefirstnarrow portion 1607tothesecondlateralconnector1665b.
[0161] Thetopconductorlevel1604alsoincludesafirsttestterminal1624aandasecondtest terminal1624b ofthetop conductorlevel1604. Thefirsttestterminal1624aextendsarounda thirdoftheI/O padopenings1679,andthetopconductorlevelmetalextendingintothatI/O pad opening 1679providesafirsttestterminalconnector1666afrom thefirsttestterminal1624ato thefirstlateralconnector1665a. Thus,thefirsttestterminal1624aiscoupledtothefirstwide portion 1605throughthefirsttestterminalconnector1666a,thefirstlateralconnector1665a,and thefirstverticalconnector1613.Similarly,thesecondtestterminal1624bextendsaroundafourth oftheI/O padopenings1679,andthetopconductorlevelmetalextendingintothatI/O padopening 1679providesasecondtestterminalconnector1666bfrom thesecondtestterminal1624btothe secondlateralconnector1665b.Thus,thesecondtestterminal1624biscoupledtothefirstnarrow portion 1607 through the second testterminalconnector 1666b,the second lateralconnector 1665b,andthe secondverticalconnector1615. Thefirstverticalconnector1613,the second verticalconnector 1615,the firsttestterminalconnector 1666a,and the second testterminal connector1666b aremembersofaverticalconnectorlevel1619 ofthemicroelectronicdevice 1600thatconnectsmembersofthetop conductorlevel1604tomembersoftheconductorlevel thatincludesthelateralconnectors1665aand 1665b.Theverticalconnectorlevel1619maybea bondpadvialeveloranRDL vialevel,conformingtotheimplementationsforthetopconductor level1604disclosedinthisexample.
[0162] A secondresistor,notshown,oftheRDAM 1601andadditionaltestterminals,alsonot shown,oftheRDAM 1601 are formed concurrently with the firstresistor 1602 and thetest terminals1624aand 1624b,andarecoupledtothethirdandfourthlateralconnectorsinasimilar configuration.Thesecondresistorisaduplicateofthefirstresistor1602,reversedindirection. TheRDAM 1601enablesestimation ofamisalignmentdistancebetweentheI/O pad openings 1679andthebondpadsofthemicroelectronicdevice1600.
[0163] FIG.17isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving aburiedlayer.Themicroelectronicdevice1700maybemanifestedasanyofthemicroelectronic devicetypesdisclosedinreferencetothemicroelectronicdevice 100ofFIG.1A andFIG.IB. Themicroelectronicdevice1700ofthisexampleisformedinandonasubstrate1749thatincludes a semiconductor material 1750 having a firstconductivity type. In this example,the first conductivitytypemaybep-type,asindicatedinFIG.17.
[0164] A firstresistor1702 oftheRDAM 1701isformedin aburiedlayerlevel1704ofthe substrate 1749. Thefirstresistor1702 hassemiconductormaterialwith asecond conductivity type,oppositefrom thefirstconductivitytype. Inthisexample,inwhichthefirstconductivity typemaybep-type,thesecond conductivity typemay ben-type,asindicatedinFIG.17. The buriedlayerlevel1704mayincludeburiedlayers,notshown,alsohavingthesecondconductivity type,in the substrate 1749. Theburied layersmay provideisolation forcomponents,buried collectorforbipolarjunctiontransistors,andsourceregionsforjunctionfieldeffecttransistors,by way ofexample. The semiconductormaterial1750 having thefirstconductivity typeextends abovethefirstresistor1702,asdepictedinFIG.17.Thefirstresistor1702includesafirstwide portion 1705andafirstnarrow portion 1707.A secondresistor,notshown,oftheRDAM 1701 isformedintheburiedlayerlevel1704. Thesecondresistorisaduplicateofthefirstresistor 1702,havingasecondwideportionandasecondnarrow portion,reversedindirection.A field reliefdielectriclayer1751maybeformedinandonthesubstrate1749.
[0165] A firstverticalconnector1713isformedthroughthefieldreliefdielectriclayer1751and throughthesemiconductormaterial1750overthefirstresistor1702,makingcontacttothefirst wideportion 1705.A secondverticalconnector1715isformedthroughthefieldreliefdielectric layer1751andthesemiconductormaterial1750overthefirstresistor1702,makingcontacttothe firstnarrow portion 1707. Theverticalconnectors 1713 and 1715 arepartsofaburied layer connectorlevelofthemicroelectronicdevice 1700,andmay beimplemented asdeeptrenches, havingconductivecores1780laterallysurroundedbyinsulatingliners1781.Theconductivecores 1780may includepolysilicon havingthesecond conductivity type. Theinsulatingliners1781 may includesilicondioxideformedbythermaloxidationofsilicon.A thirdverticalconnector, notshown,isformedthroughthefieldreliefdielectriclayer1751andthroughthesemiconductor material1750 overthe second resistor,making contactto the second wideportion. A fourth verticalconnector,notshown,isformedthroughthefieldreliefdielectriclayer1751andthrough thesemiconductormaterial1750overthesecondresistor,makingcontacttothesecondnarrow portion. Additionaldeep trenches,notshown,may beformed concurrently with thefirstand secondverticalconnectors1713and1715,andthethirdandfourthverticalconnectors,toprovide electricalconnectionstotheburiedlayersinthesubstrate1749.
[0166] A PMD layer1756maybeformedoverexistingmicroelectronicdevice1700.Contacts 1766areformedthroughthePMD layer1756tomakeelectricalconnectionstothefirstandsecond verticalconnectors1713and1715,andthethirdandfourthverticalconnectors.Thecontacts1766 maybeformedasdisclosedinreferencetotheverticalconnectorlevel1219ofFIG.12C. The contacts1766arepartofaverticalinterconnectlevelthatincludesadditionalcontacts,whichmake connectionstocomponentsofthemicroelectronicdevice1700.
[0167] A firsttestterminal1724aisformed overthePMD layer1756 to makean electrical connectiontothefirstverticalconnector1713throughoneofthecontacts1766.A secondtest terminal1724bisformedoverthePMD layer1756tomakeanelectricalconnectiontothesecond verticalconnector1715throughanotherofthecontacts1766.A thirdtestterminal,notshown,is formedoverthePMD layer1756tomakeanelectricalconnectiontothethirdverticalconnector throughathirdinstanceofthecontacts,andafourthtestterminal,notshown,isformedoverthe PMD layer1756tomakeanelectricalconnectiontothethirdverticalconnectorthroughafourth instanceofthecontacts.TheRDAM 1701enablesestimationofamisalignmentdistancebetween buried layer connectors of the buried layer connector level and the buried layers in the microelectronicdevice1700.
[0168] FIG.18isacrosssectionofamicroelectronicdevicewithanexampleRDAM involving atwo-dimensionalelectrongas(2DEG)inaIII-V semiconductordevice.Forthepurposesofthis description,theterm “III-V”isunderstoodtorefertosemiconductormaterialsinwhichgroupIII elements,thatis,aluminum,gallium,andindium,andpossibly boron,provideaportion ofthe atomsinthesemiconductormaterialandgroupV elements,thatis,nitrogen,phosphorus,arsenic, andantimony provideanotherportion oftheatomsinthesemiconductormaterial.Examplesof III-V semiconductormaterialsaregallium nitride,gallium arsenide,aluminum nitride,aluminum gallium nitride,indium phosphide,andindium antimonide.Termsdescribingelementalformulas ofIII-V materialsdonotimplyaparticularstoichiometryoftheelements. [0169] Themicroelectronicdevice 1800 ofthisexampleincludesabaselayer1850 ofTTT-V semiconductormaterial.Thebaselayer1850iscommonlyreferredtoasanunintentionallydoped (UID)layer.Forgallium nitridedevices,thebaselayer1850maybeessentiallygallium nitride. A carrierlayer1882ofIII-V semiconductormaterialisformedonthebaselayer1850.Thecarrier layer1882mayhaveastoichiometrythatissimilarto,orthesameas,astoichiometryofanupper sub-layerofthebaselayer1850.A barrierlayer1883isformedoverthecarrierlayer1882.The barrierlayerhasahigherbandgapenergythanthecarrierlayer1882,andhasdifferentcomposition than the carrierlayer 1882. Forgallium nitride devices,thebarrierlayer 1883 may include aluminum nitrideoraluminum gallium nitride.Bywayofexample.Thebarrierlayer1883exerts stressonthecarrierlayer1882,resultingina2DEG 1884beingformedinthecarrierlayer1882 underthebarrierlayer1883.The2DEG 1884iselectricallyconductive,andispresentevenwhen themicroelectronicdevice 1800isunpowered. The2DEG 1884isamemberofa2DEG level whichprovides2DEGsinfieldeffecttransistorsofthemicroelectronicdevice1800.
[0170] The barrierlayer 1883 ispatterned,forexample by an RIE processusing chlorine radicals.Thecarrierlayer1882mayalsobepatternedwiththebarrierlayer1883,asdepictedin FIG.18,ormaybeleftunpatterned.Patterningthebarrierlayer1883resultsinthe2DEG 1884 havingthesameshapeasthepatternedbarrierlayer1883.Thebarrierlayer1883ispatternedso thatthe2DEG 1884providesafirstresistor1802oftheRDAM 1801.Thefirstresistor1802has afirstwideportion 1805andafirstnarrow portion 1807.Thebarrierlayer1883isconcurrently patternedinotherareasofthemicroelectronicdevice1800toform componentssuchastransistors. The2DEG 1884isthusapartofaconductorlevelof2DEGsinthemicroelectronicdevice.A secondresistor,notshown,oftheRDAM 1801isformedconcurrentlywiththefirstresistor1802. Thesecondresistorisaduplicateofthefirstresistor1802,reversedindirection.
[0171] A firstverticalconnector1813 isformed through thebarrierlayer1883 to makean electricalconnectiontothefirstresistor1802,thatis,tothe2DEG 1884,inthefirstwideportion 1805. A second verticalconnector1815isformedthroughthebarrierlayer1883to makean electricalconnection to the firstresistor 1802 in the firstnarrow portion 1807. Thevertical connectors1813 and 1815 arepartsofaverticalconnectorlevelofthemicroelectronicdevice 1800 thatincludes source/drain contactsto field effecttransistors (FETs). A third vertical connector,notshown,isformedthroughthebarrierlayer1883overthesecondresistor,making contacttothesecondwideportion.A fourthverticalconnector,notshown,isformedthroughthe barrier layer 1883 over the second resistor,making contactto the second narrow portion. Additionalcontacts,notshown,may beformed concurrently withthefirstand secondvertical connectors 1813 and 1815,and thethird and fourth verticalconnectors,to provide electrical connectionstothe2DEGsinthecarrierlayer1882.
[0172] Testterminals1824 areformedtomakeelectricalconnectionstothefirstand second verticalconnectors1813and1815,andthethirdandfourthverticalconnectors.Thetestterminals 1824 may be formed concurrently with interconnects to the source/drain contacts in the microelectronicdevice1800.Thetestterminals1824mayincludeanadhesionlayercontaining titanium andabondinglayercontainingaluminum,bywayofexample.TheRDAM 1801enables estimationofamisalignmentdistancebetweensource/draincontactsoftheverticalconnectorlevel andthebarrierlayersinthemicroelectronicdevice1800.
[0173] FIG.19isatopview ofacrossbridgeteststructure usedtoestimatesheetresistance andtoestimatealinewidthcorrection.Theestimatedsheetresistanceandlinewidthcorrection maybeappliedtothemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimate ofthemisalignmentdistance.A microelectronicdevice 1900includesatleastoneRDAM,not shown,havingafirstresistorandasecondresistorofaconductorlevel,withverticalconnectors whicharemembersofaverticalconnectorlevel.Themicroelectronicdevice1900ofthisexample includesthecrossbridgeteststructure 1985formedon asubstrate 1949. Thecrossbridgetest structure1985includesacrossresistor1986formedintheconductorlevelthatcontainsthefirst resistorandthesecondresistoroftheRD AM.Thecrossbridgeteststructure1985alsoincludes sixtestterminalconnectors1966a,1966b,1966c,1966d,1966e,and 1966fthatmakeelectrical connectionstothecrossresistor1986.Testterminalconnectors1966athrough 1966dcontactthe crossresistor1986onfourbranchesaroundanintersection 1987ofthecrossresistor1986.Test terminalconnectors1966d,1966e,and1966fcontactthecrossresistor1986alongalinearbranch, intheorderlisted. Testterminalconnectors1966dand 1966eareseparatedby abridgelength Lbridge,asshowninFIG.19.Thecrossresistor1986hasadesignbridgewidth Wbrtdgealongthe bridgelengthLbridge,asshowninFIG.19.ThebridgelengthLbridgeisatleast4timesthedesign bridgelengthLbridge,toobtain an accurateestimateofthelinewidth ofthecrossresistor1986. Testterminals1924a,1924b,1924c,1924d,1924e,and 1924farecoupledtothetestterminal connectors1966athrough 1966f,respectively. [0174] The sheetresistanceofthe crossresistor 1986 may be estimated by forcing currents through adjacentpairs of the testterminals 1924a through 1924d and measuring potential differencesacrossremainingpairsofthetestterminals1924athrough1924d,dividingthepotential differencesbythecorresponding currentstoobtainresistances,andaveragingtheresistancesto obtainanaverageresistanceRavg.ThesheetresistanceRsheetmaybeestimatedasRsheet= n Ravg/ ln(2),whereitisapproximately 3.14159,andln(2)isthenaturallogarithm of2,approximately 0.693147.Morecomplexmethodsofestimatingthesheetresistanceusingthepotentialdifferences andthecorrespondingcurrentsarewithinthescopeofthisexample. ThesheetresistanceRsheet maybeusedinthemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimateof themisalignmentdistance.
[0175] Thelinewidthofthecrossresistor1986alongthebridgelengthLbrtdgemaybeestimated by forcing a currentthrough the testterminals 1924c and 1924fand measuring a potential differenceacrossthetestterminals1924dthrough 1924e,dividingthepotentialdifferencebythe currenttoobtainabridgeresistanceRbridge.A correctedlinewidthWcorrmaybeestimatedasWcorr = \Lbridge(Rsheet/Rbridge}]. ThevaluesforWwtdeand Wnarrasused in themethod disclosed in referencetoFIG.2may becorrectedby adding alinewidth correctionAW = Wcorr- Wbrtdgeto obtainamoreaccurateestimateofthemisalignmentdistance.
[0176] FIG.20isatopview ofathree-resistorteststructureusedtoestimatesheetresistance andtoestimatealinewidthcorrection. Theestimatedsheetresistanceandlinewidthcorrection maybeappliedtothemethoddisclosedinreferencetoFIG.2toobtainamoreaccurateestimate ofthemisalignmentdistance.A microelectronicdevice2000includesatleastoneRDAM,not shown,havingafirstresistorandasecondresistorofaconductorlevel,withverticalconnectors whicharemembersofaverticalconnectorlevel.Themicroelectronicdevice2000ofthisexample includesthethree-resistorteststructure2085formedonasubstrate2049.Thethree-resistortest structure2085includesafirstresistor2086a,asecondresistor2086b,andathirdresistor2086c. Thethreeresistors2086a,2086b,and2086careformedintheconductorlevelthatcontainsthe firstresistorandthesecondresistoroftheRDAM.
[0177] Thethree-resistorteststructure2085 includesfirsttestterminalconnectors2066aon eachendofthefirstresistor2086a.Thefirstresistor2086ahasafirstbodylengthLibetweenthe firsttestterminalconnectors2066a,withafirstdesignbodywidth Wi.des.Thethree-resistortest structure2085includessecondtestterminalconnectors2066boneachendofthesecondresistor 2086b.Thesecondresistor2086bhasasecondbodylengthA?betweenthesecondtestterminal connectors2066b,withaseconddesignbodywidth W2,des.Thethree-resistorteststructure2085 includesthirdtestterminalconnectors2066coneachendofthethirdresistor2086c.Thethird resistor2086chasathirdbodylengthLsbetweenthethirdtestterminalconnectors2066c,witha thirddesignbodywidth Wi.des.ThedesignbodywidthsWi.des,Wi.des.andWi.desarethedesigned widthsofthethreeresistors2086a,2086b,and2086c.A linewidthcorrectionJIKtothedesign bodywidthsWi.des,Wi.des,and Wi.desisdefinedasadifferencebetweenphysicalbodywidthsof thethreeresistors2086a,2086b,and2086candthedesignbodywidthsWi.des,Wi.des,and Wi.des, andmaybeestimatedusingthethree-resistorteststructure2085.ThebodylengthsLi,Li,andLi arenotallequal,andthedesignbodywidthsWi.des,Wi.des,andWi.desarenotallequal.Notwoof thethreeresistors2086a,2086b,and2086chaveequalbodylengthsandequaldesignbodywidths, thatis,notwoofthethreeresistors2086a,2086b,and2086careduplicatesofeachother.Inone versionofthisexample,thefirstbodylengthLimayequalthesecondbodylengthL2,andthethird bodylengthLimaybe2timesthefirstbodylengthLi.Inthesameversionofthisexample,the firstbodylengthLimayequalthesecondbodylengthLi,andthethirdbodylengthLimaybe2 timesthefirstbodylengthLi.
[0178] Firsttestterminals2024aarecoupledtothetestterminalconnectors2066ato enable measuring a firsttotalresistance Ri.totofthe firstresistor2086a and the firsttestterminal connectors2066a.Secondtestterminals2024barecoupledtothetestterminalconnectors2066b toenablemeasuringasecondtotalresistanceRi.totofthesecondresistor2086bandthesecondtest terminalconnectors2066b.Thirdtestterminals2024carecoupledtothetestterminalconnectors 2066ctoenablemeasuringathirdtotalresistanceRi.totofthethirdresistor2086candthethirdtest terminalconnectors2066c.ThetotalresistanceRn,totofeachofthethreeresistors2086a,2086b, and2086cisasum ofaheadresistanceRn.headandabodyresistanceRn.body,whereindexn= 1,2,3 correspondstothethreeresistors2086a,2086b,and2086c.
[0179] TheheadresistanceRn.headincludestheresistanceofthetestterminalconnectors2066a, 2066b,and2066c,aninterfaceresistancebetweenthetestterminalconnectors2066a,2066b,and 2066candthecorrespondingresistors2086a,2086b,and2086c,andaresistanceoftheresistors 2086a,2086b,and2086coutsideofthebodylengthsLi,L2,andLi.TheheadresistanceRnjieadis taken to be inversely proportionalto the corresponding design body width Wn.des. The head resistanceRn.headmaybeexpressedasRn,head= R ’headIWn.des,whereR ’headx'saheadresistivity,and isaconstantthatischaracteristicoftheheadresistanceRn.head.
[0180] ThebodyresistanceRn.bodyisproportionaltothecorrespondingbody lengthLn andthe sheetresistanceRsheetoftheresistors2086a,2086b,and2086c,andinverselyproportionaltothe corresponding corrected design body width Wn.des-A W. Thebody resistanceRn.bodymay be expressedasRn.body= Ln* RsheetI(Wn.des~AW).
[0181] Thus,thetotalresistanceRn,totofeach ofthethreeresistors2086a,2086b,and2086c, which may bemeasuredusing thecorresponding testterminals2024athrough 2024c,may be expressed in termsofthreeunknown variables:thehead resistivity R’head,the sheetresistance Rsheet,andthelinewidthcorrectionAW,andknownparameters:thebodylengthLn andthedesign bodywidth Wn,des.Thatis,Rn.tot= (R head/Wn,des) +[Ln x Rsheet/(W i.des— AW)].Measuringthe threeresistors2086a,2086b,and2086cprovidesthreeindependentequationsforRn.tot,whichmay besolvedforthethreeunknownvariables.ThesheetresistanceRsheet,maybeusedinthemethod disclosedinreferencetoFIG.2toobtainamoreaccurateestimateofthemisalignmentdistance. ThevaluesforWwtdeand Wnarrasused in themethod disclosed in referencetoFIG.2 may be correctedby subtractingthelinewidth correctionAW toobtain amoreaccurateestimateofthe misalignmentdistance.
[0182] FIG.21A andFIG.21B aretopviewsofan examplemicroelectronicdeviceincluding RDAMs,depictedinstagesofformation.ReferringtoFIG.21A,themicroelectronicdevice2100 isformedinandonasubstrate2149concurrentlywithadditionalmicroelectronicdevices2100a. The microelectronic device 2100 and the additionalmicroelectronic devices 2100a may be manifestedasanyofthemicroelectronicdevicetypesdisclosedinreferencetothemicroelectronic device100ofFIG.1A andFIG.IB.Thesubstrate2149maybeimplementedasasemiconductor wafer,aglass,sapphire,orpolymersubstrateforMEMSormicrofluidicdevices,oracomposite substrateincludingbothsemiconductormaterialanddielectricmaterial,bywayofexample.The microelectronicdevice2100containscomponents,labeled “COMPONENTS”inFIG.21A and FIG.2IB.
[0183] Themicroelectronicdevice2100andtheadditionalmicroelectronicdevices2100amay havescribeseals2188 and 2188a,respectively,surroundingthecomponents. Thescribeseals 2188and2188amayincludecontinuousinterconnectsandcontinuousviasordensediscretevias, toreducecrackpropagationandimpurityinfdtrationintothecomponents.Singulationlanes2189, commonlyreferredtoasscribelanesorstreets,saw lanesorstreets,dicinglanesorstreets,extend betweenthemicroelectronicdevice2100andtheadditionalmicroelectronicdevices2100a.The singulationlanes2189mayextendtothescribeseals2188and2188a,ormayextendpartwayto thescribeseals2188and2188a.
[0184] Themicroelectronic device2100 ofthisexampleincludesan internalRDAM 2101a locatedinsidethescribeseal2188. TheinternalRDAM 2101aincludesafirstinternalresistor 2102aandasecondinternalresistor2103a,andverticalconnectors,notshown,formedaccording toanyoftheexamplesdisclosedherein.TheinternalRD AM 2101aincludesinternaltestterminals 2124acoupledtotheverticalconnectors.Theinternaltestterminals2124amayextendtoprobe padsatatopsurfaceofthemicroelectronicdevice2100,toenableprobingafterfabricationofthe microelectronicdevice2100iscompleted,ormayextendtobondpadstoenablewirebondingthe internaltestterminals2124aduringassemblyofthemicroelectronicdevice2100toallow testing theinternalRDAM 2101a afterpackaging themicroelectronic device2100. Theinternaltest terminals2124amaybecoupledtotheverticalconnectorsthroughamultiplexer,labeled “MUX” inFIG.21A andFIG.21B.Themultiplexermayadvantageouslyenabletestingapluralityoftest structuresusingarelatively smallnumberofprobe/bondpads.TheinternalRDAM 2101amay bereferredtoasanon-chipparametric(OCP)teststructure.
[0185] Themicroelectronicdevice2100ofthisexamplealsoincludesexternalRD AMs2101b locatedoutsideofthescribeseal2188,in cornerregions. TheexternalRDAMs2101b maybe locatedinareasofthemicroelectronicdevice2100thatexperiencehighstress,suchascornersof themicroelectronicdevice2100,and thusdo notcontain components. The externalRDAMs 2101bmaybeformedaccordingtoanyoftheexamplesdisclosedherein.TheexternalRDAMs 2101bmayalsobereferredtoasOCPteststructures.
[0186] The microelectronic device 2100 ofthis example further includes singulation lane RDAMs 2101clocatedoutsidethescribeseals2188and2188a,on sidesofthemicroelectronic device2100.ThesingulationlaneRDAMs2101cmayextendintothesingulationlanes2189,as depictedinFIG.21AandFIG.21B.ThesingulationlaneRDAMs2101cmaybeformedaccording toanyoftheexamplesdisclosedherein.ThesingulationlaneRDAMs2101cmaybetestedduring andafterfabricationofthemicroelectronicdevice2100,beforethemicroelectronicdevice2100 issingulatedfrom theadditionalmicroelectronicdevices2100a. [0187] Referring to FIG.21B,atleasta portion ofthe substrate 2149 isremoved from the singulation lanes 2189, singulating the microelectronic device 2100 from the additional microelectronicdevices2100a.TheinternalRDAM 2101aremainsinplaceinthemicroelectronic device2100afterthemicroelectronicdevice2100issingulated.Similarly,theexternalRDAMs 2101bremaininplaceinthemicroelectronicdevice2100afterthemicroelectronicdevice2100is singulated. Oneormoreportions,orall,ofoneormoreofthesingulationlaneRD AMs2101c mayremaininthesingulatedmicroelectronicdevice2100.Theportionsofthesingulationlane RD AMs2101c may be presentin the microelectronic device 2100 afterpackaging,thatis, connectiontoexternalleadsandencapsulation,forexample,iscompleted.
[0188] Various features of the examples disclosed herein may be combined in other manifestationsofexamplemicroelectronicdevices.Forexample,any oftheRDAMsdisclosed hereinmayhavesingleresistors,asdisclosedinreferencetoFIG.1A,ormayhaveapluralityof resistorsconnected serially,asdepicted disclosed in referencetoFIG.4. Any oftheRDAMs disclosedhereinmayincludeareferenceresistorpair,asdisclosedinreferencetoFIG.3.Anyof theRDAMs disclosedhereinmayhaveresistorsandverticalconnectorsconfiguredasdisclosed inreferencetoFIG.6throughFIG.11.AnyoftheRDAMsdisclosedhereinmayhaveresistors formedinaninterconnectlevel,agatelevel,adiffusedlayerlevelinasemiconductorsubstrate,a resistorlevel,acapacitorplatelevel,abondpadlevel,anRDL level,aburiedlayerlevelin a semiconductor substrate,or a 2DEG levelin a III-V semiconductor material. Any ofthe microelectronicdevicesdisclosedhereinmayincludeoneormoreRDAMsconfiguredtomeasure a misalignment distance in one direction or in two orthogonal directions. Any of the microelectronicdevicesdisclosedhereinmayincludeacrossbridgeteststructure,asdisclosedin referencetoFIG.19.Any ofthemicroelectronicdevicesdisclosedhereinmay includeathree- resistorteststructure,asdisclosedinreferencetoFIG.20.
[0189] Whilevariousembodimentsofthe presentdisclosurehave been described above,it shouldbeunderstoodthatthey havebeenpresentedbyway ofexampleonly andnotlimitation. Numerouschangestothedisclosedembodimentscanbemadeinaccordancewiththedisclosure hereinwithoutdepartingfrom thespiritorscopeofthedisclosure.Thus,thebreadthandscopeof thepresentinventionshouldnotbelimitedbyanyoftheabovedescribedembodiments.Rather, thescopeofthedisclosureshouldbedefinedinaccordancewiththefollowing claimsandtheir equivalents.

Claims

CLAIMS Whatisclaimedis:
1.A microelectronicdevice,comprising: aresistivedifferentialalignmentmonitor(RDAM),including: afirstresistor,includingafirstwideportionandafirstnarrow portion; afirstconnectorcontactingthefirstwideportion; asecondconnectorcontactingthefirstnarrow portion; asecondresistor,includingasecondwideportionandasecondnarrow portion; athirdconnectorcontactingthesecondwideportion;and afourthconnectorcontactingthesecondnarrow portion; wherein: afirstwidthofthefirstwideportionadjacenttothefirstconnectorisgreater thanasecondwidthofthefirstnarrow portionadjacenttothesecondconnector; thefirstconnectorisseparatedfrom thesecondconnectorinafirstdirection byafirstlength; thesecondwideportionadjacenttothethirdconnectorhasthefirstwidth; thesecondnarrow portionadjacenttothefourthconnectorhasthesecond width;and the third connectoris separated from the fourth connectorin a second direction,anti-paralleltothefirstdirection,bythefirstlength.
2.Themicroelectronicdeviceofclaim 1,whereinthefirstresistorandthesecondresistor aremembersofaresistorlevel.
3.Themicroelectronicdeviceofclaim 1,whereinthefirstconnector,thesecondconnector, thethirdconnector,andthefourthconnectoraremembersofavialevel.
4.Themicroelectronicdeviceofclaim 1,furtherincludingasecondRDAM,including: athirdresistor,includingathirdwideportionandathirdnarrow portion; afifthconnectorcontactingthethirdwideportion; asixthconnectorcontactingthethirdnarrow portion; afourthresistor,includingafourthwideportionandafourthnarrow portion; aseventhconnectorcontactingthefourthwideportion;and aneighthconnectorcontactingthefourthnarrow portion; wherein: thethirdwideportionadjacenttothefifthconnectorhasthefirstwidth; thethirdnarrow portionadjacenttothesixthconnectorhasthesecondwidth; the fifth connectoris separated from the sixth connectorin a third direction, perpendiculartothefirstdirection,bythefirstlength; thefourthwideportionadjacenttotheseventhconnectorhasthefirstwidth; thefourthnarrow portion adjacenttotheeighth connectorhasthesecondwidth; and theseventhconnectorisseparatedfrom theeighthconnectorinafourthdirection, anti-paralleltothethirddirection,bythefirstlength.
5.Themicroelectronicdeviceofclaim 1,whereintheRDAM furtherincludes: athirdresistor,thethirdresistorbeingaduplicateofthefirstresistorandorientedparallel tothefirstresistor; afifthconnectorcontactingathirdwideportionofthethirdresistor; asixthconnectorcontactingathirdnarrow portionofthethirdresistor,thesixthconnector beingdirectlyconnectedtothefirstconnectorthroughafirstconductivelink; afourthresistor,thefourthresistorbeing aduplicateofthesecondresistorandoriented paralleltothesecondresistor; aseventhconnectorcontactingafourthwideportionofthefourthresistor;and an eighth connectorcontacting afourth narrow portion ofthefourth resistor,theeighth connectorbeingdirectlyconnectedtothethirdconnectorthroughasecondconductivelink.
6.Themicroelectronicdeviceofclaim 1,whereintheRDAM furtherincludes: athirdresistor,thethirdresistorbeingaduplicateofthefirstresistorandorientedparallel tothefirstresistor; afifthconnectorcontactingathirdwideportionofthethirdresistor; asixthconnectorcontactingathirdnarrow portionofthethirdresistor; afourthresistor,thefourthresistorbeing aduplicateofthesecondresistorandoriented paralleltothefirstresistor; aseventhconnectorcontactingafourthwideportionofthefourthresistor;and aneighthconnectorcontactingafourthnarrow portionofthefourthresistor; whereinthethirdresistorisconnectedinseriestothefourthresistorthroughaconductive link.
7.Themicroelectronicdeviceofclaim 1,wherein thefirstwideportion hasaconstant widthalongthefirstdirection,thefirstnarrow portionhasaconstantwidthalongthefirstdirection, thesecondwideportionhasaconstantwidthalongtheseconddirection,andthesecondnarrow portionhasaconstantwidthalongtheseconddirection.
8.The microelectronic device of claim 1,wherein the RDAM furtherincludes test terminalscoupledtothefirstconnector,thesecondconnector,thethirdconnector,andthefourth connector.
9.Themicroelectronicdeviceofclaim 1,furtherincluding ateststructureconfiguredto provideanestimateofsheetresistanceofthefirstresistorandthesecondresistorandconfigured toprovidealinewidthcorrectionforthefirstresistorandthesecondresistor.
10.Themicroelectronicdeviceofclaim 1,furtherincludingasecondRDAM,including: athirdresistor,includingathirdwideportionandathirdnarrow portion; afifthconnectorcontactingthethirdwideportion; asixthconnectorcontactingthethirdnarrow portion; afourthresistor,includingafourthwideportionandafourthnarrow portion; aseventhconnectorcontactingthefourthwideportion;and aneighthconnectorcontactingthefourthnarrow portion; wherein: athirdwidthofthethirdwideportionadjacenttothefifthconnectorisgreaterthan afourthwidthofthethirdnarrow portionadjacenttothesixthconnector; thefifthconnectorisseparatedfrom thesixthconnectorinathirddirection,parallel tothefirstdirection,byasecondlength; thefourthwideportionadjacenttotheseventhconnectorhasthethirdwidth; thefourthnarrow portionadjacenttotheeighthconnectorhasthefourthwidth; theseventhconnectorisseparatedfrom theeighthconnectorinafourthdirection, anti-paralleltothethirddirection,bythesecondlength; thethirdresistorandthefourthresistoraremembersofadifferentconductorlevel thanthefirstresistorandthesecondresistor;and thefirstconnectorandthefifthconnectoraremembersofasameconnectorlevel.
11.Themicroelectronicdeviceofclaim 1,wherein: thefirstwideportionhasafirstwidelengthalongthefirstdirectionthatis2to5timesa minimum lateraldimensionofthefirstconnectoratthefirstresistor; thefirstnarrow portionhasafirstnarrow lengthalongthefirstdirectionthatis2to5times aminimum lateraldimensionofthesecondconnectoratthefirstresistor; thesecondwideportionhasasecondwidelengthalongtheseconddirectionthatisequal tothefirstwidelength;and thesecondnarrow portionhasasecondnarrow length alongtheseconddirectionthatis equaltothefirstnarrow length.
12.Themicroelectronicdeviceofclaim 1,whereinthefirstwidthis2to4timesthesecond width.
13.Themicroelectronicdeviceofclaim 1,whereintheRDAM islocatedonasideofthe microelectronicdevice,outsideascribeseal.
14.A methodofformingamicroelectronicdevice,comprising: concurrentlyformingafirstresistorincludingafirstwideportionandafirstnarrow portion andformingasecondresistorincludingasecondwideportionandasecondnarrow portion;and concurrentlyformingafirstconnectorcontactingthefirstwideportion,formingasecond connectorcontactingthefirstnarrow portion,formingathirdconnectorcontactingthesecondwide portion,andformingafourthconnectorcontactingthesecondnarrow portion;wherein: afirstwidthofthefirstwideportionadjacenttothefirstconnectorisgreaterthanasecond widthofthefirstnarrow portionadjacenttothesecondconnector; thefirstconnectorisseparated from thesecond connectorin afirstdirectionby afirst length; thesecondwideportionadjacenttothethirdconnectorhasthefirstwidth; thesecondnarrow portionadjacenttothefourthconnectorhasthesecondwidth;and thethird connectorisseparated from the fourth connectorin a second direction,antiparalleltothefirstdirection,bythefirstlength.
15.Themethodofclaim 14,whereinthefirstresistorandthesecondresistorareformed concurrentlywithmembersofaresistorlevel.
16.Themethodofclaim 14,whereinthefirstconnector,thesecondconnector,thethird connector,andthefourthconnectorareformedconcurrentlywithmembersofavialevel.
17.Themethodofclaim 14,whereinthefirstresistorandthesecondresistorareformed priorto forming thefirstconnector,the second connector,thethird connector,and thefourth connector.
18.Themethodofclaim 14,whereinthefirstresistorandthesecondresistorareformed afterforming the firstconnector,the second connector,the third connector,and the fourth connector.
19.Themethodofclaim 14,furtherincluding: formingafifthconnector,asixthconnector,aseventhconnector,andaneighthconnector, concurrentlywiththefirstconnector;and subsequentlyformingathirdresistorandafourthresistorconcurrently,separatelyfrom the firstresistor,whereinthethirdresistorincludesathirdwideportioncontactingthefifthconnector andincludesathirdnarrow portioncontactingthesixthconnector,andthefourthresistorincludes a fourth wideportion contacting the seventh connectorand includesa fourth narrow portion contactingtheeighthconnector;wherein: athirdwidthofthethirdwideportionadjacenttothefifthconnectorisgreaterthanafourth widthofthethirdnarrow portionadjacenttothesixthconnector; thefifthconnectorisseparatedfrom thesixthconnectorinthefirstdirectionbyasecond length; thefourthwideportionadjacenttotheseventhconnectorhasthethirdwidth; thefourthnarrow portionadjacenttotheeighthconnectorhasthefourthwidth;and theseventhconnectorisseparatedfrom theeighthconnectorintheseconddirectionbythe secondlength.
20.Themethodofclaim 14,whereinthefirstresistorandthesecondresistorareformed onasideofthemicroelectronicdevice,outsideascribeseal.
PCT/US2023/019265 2022-04-28 2023-04-20 Resistive differential alignment monitor Ceased WO2023211756A1 (en)

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JP2019207280A (en) * 2018-05-28 2019-12-05 ルネサスエレクトロニクス株式会社 Method for manufacturing semiconductor device, misalignment detection method and semiconductor device
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DE112023002158T5 (en) 2025-03-20
US20250164286A1 (en) 2025-05-22

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