WO2023142565A1 - Nanocomplex, method for preparing same, and light-emitting device - Google Patents

Nanocomplex, method for preparing same, and light-emitting device Download PDF

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WO2023142565A1
WO2023142565A1 PCT/CN2022/128627 CN2022128627W WO2023142565A1 WO 2023142565 A1 WO2023142565 A1 WO 2023142565A1 CN 2022128627 W CN2022128627 W CN 2022128627W WO 2023142565 A1 WO2023142565 A1 WO 2023142565A1
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metal oxide
conductive polymer
nanocomposite material
light
emitting device
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PCT/CN2022/128627
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French (fr)
Chinese (zh)
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夏思雨
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Tcl科技集团股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the application relates to the field of materials, in particular to a nanocomposite material, a preparation method thereof, and a light emitting device.
  • Quantum Dot is a semiconductor cluster with a size of 1nm to 10nm. Due to the quantum size effect, people can achieve the required specific wavelength of light by adjusting the size of the quantum dot. It can be applied to light-emitting diodes, solar energy Batteries, bioluminescence labeling and other fields.
  • QLED quantum dot light-emitting Cide
  • electrons and holes are injected from the cathode and anode, respectively, and then recombine in the quantum dot light-emitting layer to form excitons to emit light.
  • QLED has a series of advantages such as high color saturation, adjustable luminous color, and low energy consumption, and has become a strong competitor for the next generation of display devices.
  • the present application provides a nanocomposite material, a preparation method thereof, and a light emitting device.
  • nanocomposite material including:
  • a metal oxide nano core, and a conductive polymer shell covering the metal oxide nano core are provided.
  • the particle size of the nanocomposite material is 10 nm ⁇ 15 nm.
  • the thickness of the conductive polymer shell layer is 3 nm ⁇ 5 nm.
  • the particle size of the metal oxide nano-core is 7nm-10nm.
  • the conductive polymer is poly(1,5-diaminoanthraquinone), polyaniline, poly(1-aminoanthraquinone) or poly(2-aminoanthraquinone) one or more of .
  • the metal oxide is selected from: ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO or InSnO one or more of.
  • the nanocomposite material is composed of a metal oxide nanocore and a conductive polymer shell covering the metal oxide nanocore.
  • the embodiment of the present application also provides a method for preparing a nanocomposite material, the method comprising:
  • the nano-composite material includes a metal oxide nano-core and a conductive polymer shell covering the metal oxide nano-core.
  • the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is (1-5):20; and/or
  • the molar ratio of the oxidizing agent to the conductive polymer monomer is (1-2):2; and/or
  • the oxidant is selected from one or more of ammonium persulfate or hydrogen peroxide; and/or
  • the conductive polymer monomer is one or more of 1,5-diaminoanthraquinone, aniline, 1-aminoanthraquinone or 2-aminoanthraquinone; and/or
  • the metal oxide nanoparticle sol includes the metal oxide nanoparticles, a surfactant and water, and the surfactant is selected from one of sodium dodecylsulfonate, sodium laurate or polyethylene glycol or more.
  • adding a conductive polymer monomer and an oxidizing agent to the sol containing metal oxide nanoparticles to perform a polymerization reaction to obtain the nanocomposite material includes:
  • the oxidizing agent is added into the intermediate mixed solution and mixed to carry out a polymerization reaction to obtain the nanocomposite material.
  • the conductive polymer monomer is 1,5-diaminoanthraquinone
  • the mixing treatment time is 5h-10h
  • the temperature is 3°C-10°C;
  • the time for the ultrasonic dispersion treatment is 5 minutes to 30 minutes.
  • the step of providing a sol containing metal oxide nanoparticles includes:
  • the metal oxide nanoparticles are added into the aqueous solution of the surfactant, and ultrasonically dispersed for 5 minutes to 30 minutes to form a stably dispersed metal oxide nanoparticle sol.
  • the molar ratio of the precipitation agent to the salt is (1-2):6.
  • the salt includes a zinc salt
  • the zinc salt includes one or more of zinc acetate, zinc citrate, and zinc lactate
  • the precipitant is one or more of urea, hexamethylenetetramine, tetramethylammonium hydroxide or sodium hydroxide;
  • the surfactant is selected from one or more of sodium dodecylsulfonate, sodium laurate or polyethylene glycol.
  • the embodiment of the present application also provides a light emitting device, which includes:
  • the material of the electron transport layer includes the above-mentioned nanocomposite material, or includes the nanocomposite material made by the above-mentioned method.
  • the material of the anode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, tin-doped zinc oxide or indium-doped zinc oxide ;and / or
  • the material of the light-emitting layer includes quantum dots, the quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group compounds One or more selected from CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe or CdZnSTe; the III -V group compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP or InAlNP; the I-III-VI group compound is selected from CuInS 2 , CuInSe 2 or
  • the material of the cathode is selected from one or more of Al, Cu, Mo, Au, Ag or MoO 3 .
  • the light emitting device further includes a hole transport layer and a hole injection layer, the hole injection layer is arranged between the anode and the light emitting layer, the a hole transport layer is disposed between the hole injection layer and the light emitting layer;
  • the material of the hole injection layer is selected from one or more of PEDOT:PSS, NiO, MoO 3 , WO 3 or V 2 O 5 ;
  • the material of the hole transport layer is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'bis( 4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-benzenedi amine), 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N '-Bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1 , one or more of 1'-bipheny
  • Fig. 1 is a schematic flow diagram of a preparation method of a nanocomposite material provided by an embodiment of the present application
  • Fig. 2 is a light-emitting device with a positive structure provided in the first embodiment of the present application;
  • Fig. 3 is a light-emitting device with a positive structure provided in the second embodiment of the present application.
  • Fig. 4 is a light-emitting device with an inverted structure provided by the third embodiment of the present application.
  • Fig. 5 is the TEM electron microscope picture of a kind of nanocomposite material provided by the embodiment of the present application.
  • FIG. 6 is a schematic flow diagram of a method for preparing a nanocomposite provided in another embodiment of the present application.
  • Fig. 7 is a schematic flowchart of a method for preparing a nanocomposite material provided by another embodiment of the present application.
  • one or more means one or more, and “multiple” means two or more.
  • “One or more”, “at least one of the following” or similar expressions refer to any combination of these items, including any combination of single or plural items.
  • “at least one item (unit) of a, b, or c”, or “at least one item (unit) of a, b, and c” can mean: a, b, c, a-b( That is, a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.
  • an embodiment of the present application provides a nanocomposite material, including: a metal oxide nanocore, and a conductive polymer shell covering the metal oxide nanocore.
  • a nanocomposite material is obtained by coating the surface of oxide nanoparticles with a conductive polymer.
  • the nanocomposite material is used as the electron transport layer of a light-emitting device, the mobility of electrons can be reduced, thereby helping electrons The balance of electrons and holes helps electrons and holes to recombine in the light-emitting layer, improving the luminous efficiency of the device and improving the performance of the device.
  • the conductive polymer coated on the metal oxide nano-core can absorb the high-energy particles brought by sputtering to a certain extent, thereby preventing damage to the electron transport layer during sputtering cathode and improving device leakage. current problem.
  • the conductive polymer is one or more of poly-1,5-diaminoanthraquinone, polyaniline, poly(1-aminoanthraquinone) or poly(2-aminoanthraquinone).
  • the poly 1,5-diaminoanthraquinone (PDAA) material has better electrical compatibility, that is, the matching degree of electroluminescence and quantum dots is better, so the performance of the device is improved better; in addition, the poly-1,5-diaminoanthraquinone coated on the metal oxide nano-core has a dense stacking structure, which can better absorb the high-energy particles brought by sputtering as a protective layer, thereby preventing electrons from being damaged during the sputtering cathode process. The damage of the transmission layer and the improvement effect of the leakage current of the device are more significant.
  • the thickness of the conductive polymer shell layer is 3nm-5nm (nanometer). If the thickness is too thin, the inner metal oxide nano-core cannot be well protected; if it is too thick, the performance of the device will be affected. It can be understood that the thickness of the conductive polymer shell layer can be any value within the range of 3nm to 5nm, for example: 3nm, 3.5nm, 4nm, 4.5nm, 5nm, etc., or other unlisted values within the range of 3nm to 5nm out the value.
  • the particle size of the metal oxide nano-core is 7nm-10nm. If the particle size of the metal oxide nano-core is too large, its energy band will be too narrow, and the energy band matching with quantum dots will become poor; if the particle size is too small, it will easily agglomerate during the preparation process, resulting in poor stability. It can be understood that the particle size of the metal oxide nano-core can be any value within the range of 7nm-10nm, for example: 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, 10nm and so on. Or other unlisted values within the range of 7nm to 10nm.
  • the particle size of the nanocomposite material is 10nm-15nm. In this thickness range, the performance of the device is better. It can be understood that the particle size of the nanocomposite material can be 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, etc., or within the range of 10nm to 15nm Other values not listed.
  • the metal oxide may be a doped or non-doped metal oxide known in the art as an electron transport material.
  • the doped or non-doped metal oxide is selected from but not limited to: ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, TiLiO, ZnAlO, ZnMgO , ZnSnO, ZnLiO or one or more of InSnO.
  • the metal oxide is doped or non-doped ZnO, and ZnO is an excellent semiconductor material, a good electron transport layer material, and has strong electron injection performance. Coating ZnO with conductive polymer has a significant effect on improving the hole-electron transport imbalance.
  • the nanocomposite material is composed of a metal oxide nanocore, and a conductive polymer shell covering the metal oxide nanocore.
  • the embodiment of the present application also provides a method for preparing a nanocomposite material, the method comprising:
  • the conductive polymer monomer can undergo oxidative polymerization reaction, Thereby, a conductive polymer (such as poly 1,5-diaminoanthraquinone) is generated and covered on the surface of the oxide nanoparticle to obtain a nanocomposite material.
  • a conductive polymer such as poly 1,5-diaminoanthraquinone
  • the nanomaterial can Reduce electron mobility, thereby helping the balance of electrons and holes, improving the luminous efficiency of the device, and improving the performance of the device.
  • the conductive polymer can be used as a protective layer to prevent damage to the electron transport layer during sputtering of the cathode and improve the leakage current of the device.
  • the conductive polymer monomer is one or more of 1,5-diaminoanthraquinone, aniline, 1-aminoanthraquinone or 2-aminoanthraquinone.
  • the step S10 provides a sol containing metal oxide nanoparticles, including:
  • the molar ratio of the precipitation agent to the salt is (1-2):6.
  • the molar ratio of the surfactant to the metal oxide nanoparticles is 1:4.
  • the salt may be a zinc salt, including but not limited to: one or more of zinc acetate, zinc citrate, and zinc lactate.
  • the precipitating agent is one or more of urea, hexamethylenetetramine, tetramethylammonium hydroxide or sodium hydroxide.
  • the surfactant is selected from one or more of sodium dodecylsulfonate, sodium laurate or polyethylene glycol.
  • the step S20 adds a conductive polymer monomer and an oxidant to the sol containing metal oxide nanoparticles, and performs a polymerization reaction to obtain a nanocomposite material, including:
  • a washing step is also included, and the washing step can be performed in conjunction with suction filtration.
  • the purpose of washing is to remove unreacted reactants or impurities, such as oxidants.
  • Organic matter and water can be used for washing, such as deionized water and methanol for washing.
  • the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is (1 ⁇ 5):20. If the conductive polymer monomer is too small, the metal oxide nanoparticles cannot be completely coated; if too much, the coating thickness is too thick and the device performance will be affected. It can be understood that the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is any value within the range of (1-5):20, such as 1:20, 2:20, 3:20, 4: 20, 5:20, etc., or other unlisted values within the range of (1 ⁇ 5):20.
  • the molar ratio of the oxidizing agent to the conductive polymer monomer is (1 ⁇ 2):2. If there is too little oxidizing agent, the conductive polymer monomer cannot be completely polymerized; if there is too much oxidizing agent, too much oxidizing agent will be introduced into the solution, which will affect the later washing. It can be understood that the molar ratio of the oxidizing agent to the conductive polymer monomer can be any value within the range of (1-2):2, for example: 1:2, 1.1:2, 1.2:2, 1.3:2, 1.4: 2, 1.5: 2, 1.6: 2, 1.7: 2, 1.8: 2, 1.9; 2, 2: 2, etc., or other unlisted values within the range of (1 ⁇ 2): 2.
  • the oxidizing agent is selected from one or more of ammonium persulfate or hydrogen peroxide.
  • the metal oxide nanoparticle sol includes the metal oxide nanoparticles, a surfactant and water, and the surfactant is selected from sodium dodecylsulfonate, sodium laurate, or polyethylene glycol. One or more of diols.
  • the mixing treatment time is 5h-10h (hours), and the mixing temperature is 3°C-10°C (degrees Celsius ), because the oxidative polymerization of the conductive polymer monomer is an exothermic reaction, so it needs to be carried out at a lower temperature, if the temperature is too low, the reaction rate is too slow; if the temperature is too high, the synthetic conductive polymer monomer The surface is rough and there are many defects, which affect the performance of the device.
  • the mixing temperature can be any value in the range of 3°C to 10°C, such as 3°C, 4°C, 5°C, 6°C, 7°C °C, 8°C, 9°C, 10°C, or other unlisted values within the range of 3°C ⁇ 10°C.
  • the mixing treatment time and mixing temperature are not particularly limited, as long as the required nanocomposite material is formed.
  • the time for the ultrasonic dispersion treatment is 5 minutes to 30 minutes (minutes).
  • the purpose of ultrasonic dispersion is to uniformly disperse the conductive polymer in the sol of oxide nanoparticles. It can be understood that the time of ultrasonic dispersion can be arbitrarily selected within the range of 5min to 30min, such as 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min, 20min, 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min, 30min, etc., or 5min Other values not listed within the range of ⁇ 30min.
  • the present application also provides a light-emitting device, including: a cathode 7, an anode 2, and an electron transport layer 6 and a light-emitting layer 5 arranged between the cathode 7 and the anode 2, the light-emitting Layer 5 is disposed close to the anode 2, the electron transport layer 6 is disposed close to the cathode 7, and the material of the electron transport layer 6 includes the nanocomposite material described in any of the above embodiments, or includes any of the above Nanocomposites made by the method described.
  • the light emitting device is a quantum dot light emitting device (QLED).
  • QLED quantum dot light emitting device
  • the light-emitting device described in the embodiments of the present application may have a positive structure or an inverse structure.
  • the side of the cathode 7 or the anode 2 away from the light-emitting layer 5 also includes the substrate 1, the anode 2 is arranged on the substrate 1 in the positive structure, and the cathode 7 is arranged on the substrate 1 in the inverse structure superior.
  • a hole functional layer such as a hole transport layer 4 and a hole injection layer 3 may also be provided between the anode 2 and the light emitting layer 5 .
  • a hole transport layer 4 and a hole injection layer 3 may also be provided between the anode 2 and the light emitting layer 5 .
  • Fig. 3 shows a schematic diagram of a positive structure of the light-emitting device described in the embodiment of the present application.
  • the device of the positive structure includes a substrate 1 and an anode 2 arranged on the surface of the substrate 1 , the hole injection layer 3 arranged on the surface of the anode 2, the hole transport layer 4 arranged on the surface of the hole injection layer 3, the light emitting layer 5 arranged on the surface of the hole transport layer 4, and the The electron transport layer 6 on the surface of the light-emitting layer 5 and the cathode 7 disposed on the surface of the electron transport layer 6, wherein the material of the electron transport layer 6 is selected from nanocomposite materials.
  • Fig. 4 shows a schematic diagram of an inverse structure of the light emitting device according to the embodiment of the present application.
  • the inversion structure light emitting device includes a substrate 1 and a cathode 7 arranged on the surface of the substrate 1 , the electron transport layer 6 arranged on the surface of the cathode 7, the light emitting layer 5 arranged on the surface of the electron transport layer 6, the hole transport layer 4 arranged on the surface of the light emitting layer 5 and the hole transport layer 4 arranged on the surface of the hole transport The hole injection layer 3 and the anode 2 on the surface of the layer 4, wherein the material of the electron transport layer 6 is selected from nanocomposite materials.
  • each functional layer may be the following materials, for example:
  • the substrate 1 can be a rigid substrate or a flexible substrate.
  • Specific materials may include one of glass, silicon wafer, polycarbonate, polymethylmethacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone or more.
  • the anode 2 is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, tin-doped zinc oxide or indium-doped zinc oxide.
  • the material of the hole injection layer 3 is selected from PEDOT:PSS, or other materials with good hole injection properties, such as one or more of NiO, MoO 3 , WO 3 or V 2 O 5 .
  • the material of the hole transport layer 4 is selected from but not limited to poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), poly (N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine)(Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N , N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9- Carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD ), one or more of
  • the material of the light-emitting layer 5 includes quantum dots, the quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group
  • the compound is selected from one or more of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe or CdZnSTe;
  • the III-V group compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP or InAlNP;
  • the I-III-VI group compound is selected from CuInS
  • the cathode 7 is selected from one or more of Al, Cu, Mo, Au, Ag or MoO 3 .
  • the cathode is the cathode 7 prepared by magnetron sputtering.
  • the thickness of the electron transport layer is 15-30nm. If the electron transport layer is too thin, the sputtering damage may pass through the electron transport layer and damage the light-emitting layer. If the electron transport layer is too thick, it will cause The resistance of the device increases, which reduces the performance of the device.
  • the thickness of the electron transport layer can be arbitrarily selected within the range of 15nm to 30nm, such as 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, 30nm, etc., or any other unlisted value within the range of 15nm to 30nm.
  • the present application also provides a method for preparing a light-emitting device.
  • the light-emitting device may be a light-emitting device with a positive structure or a light-emitting device with an inverse structure.
  • the method for preparing a light-emitting device with a positive structure Including the following steps:
  • a method for preparing a light-emitting device with an inverted structure includes the following steps:
  • An electron transport layer is deposited on the cathode using a solution of the electron transport layer material.
  • a light emitting layer is deposited on the electron transport layer.
  • the solution of the material for the electron transport layer includes nanocomposite materials and an organic solvent, and the organic solvent may be an alcohol compound, such as ethanol.
  • the nano-composite material includes: a metal oxide nano-core, and a conductive polymer shell covering the metal oxide nano-core.
  • the method for preparing each functional layer on the light-emitting device can be realized by methods known in the art, such as chemical methods and physical methods, wherein chemical methods include: chemical vapor phase Deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, co-precipitation method.
  • Physical methods include physical coating methods and solution processing methods. Specific physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc.
  • Solution processing methods include spin coating method, printing method, inkjet printing method, blade coating method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method, slit coating method, strip coating method coating method.
  • each functional layer on the light-emitting device is prepared by the spin-coating method in the solution method, and the preparation by the spin-coating method needs to prepare the solution of each functional layer material first, and then spin The coated sheet is placed on a spin coater, and the solution configured with functional layer materials is dropped onto the top of the spin coater, spin-coated at a preset speed, and the preparation of the functional layer is completed after heat treatment.
  • the spin coating method has the characteristics of mild process conditions, simple operation, energy saving and environmental protection, and its preparation of light-emitting devices has the advantages of high carrier mobility and precise thickness.
  • the preparation method of the reverse type light emitting device is similar to that of the positive type, the difference is only in the deposition sequence of the functional layers, which will not be repeated here.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • Dissolve 84mg of sodium dodecylsulfonate in 50mL of deionized water add another 100mg of nano-zinc oxide to the above solution, stir ultrasonically for 10 minutes to form a stable dispersed nano-sol of zinc oxide, and place the above-mentioned sol in a 5°C incubator , continue to stir, add 15mg of PDAA monomer, stir for 30 minutes to fully dissolve it, take another 10mg of ammonium persulfate and dissolve it in 10mL of deionized water, add the ammonium persulfate solution dropwise to the nano-zinc oxide sol containing PDAA monomer, After the addition was completed, the stirring reaction was continued for 8 hours.
  • the particle size of the nanocomposite material is 10nm-15nm, and the TEM image is shown in Figure 5, indicating that the nanocomposite material was successfully prepared.
  • the particle diameters and electron micrographs of other examples are roughly the same as those of this example.
  • the preparation method of the light-emitting device is as follows:
  • the Ag electrode with a thickness of 80nm is deposited on the electron transport layer by magnetron sputtering; the light-emitting device is obtained by simply encapsulating it with an ultraviolet curing adhesive.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • the preparation method of the light-emitting device is the same as that of Example 1.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • Dissolve 84mg of sodium dodecylsulfonate in 50mL of deionized water add another 100mg of nano-zinc oxide to the above solution, stir ultrasonically for 10 minutes to form a stable dispersed nano-sol of zinc oxide, and place the above-mentioned sol in a 5°C incubator , continue to stir, add 50mg of PDAA monomer, stir for 30 minutes to fully dissolve it, take another 30mg of ammonium persulfate and dissolve it in 10mL of deionized water, add the ammonium persulfate solution dropwise to the nano-zinc oxide sol containing PDAA monomer, After the addition was completed, the stirring reaction was continued for 8 hours.
  • the preparation method of the light-emitting device is the same as that of Example 1.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • the preparation method of the nanocomposite is the same as that of Example 1.
  • the preparation method of this light-emitting device is roughly the same as that of Example 1, except that the thickness of the electron transport layer is 20 nm.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • the preparation method of the nanocomposite is the same as that of Example 1.
  • the preparation method of the light-emitting device is roughly the same as that of Example 1, except that the thickness of the electron transport layer in this example is 15 nm.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • the preparation method of the nanocomposite is the same as that of Example 1.
  • the preparation method of the light-emitting device is roughly the same as that of Example 1, except that the thickness of the cathode in this example is 100 nm.
  • This embodiment provides a nanocomposite material and a light emitting device.
  • the preparation method of the nanocomposite is the same as that of Example 1.
  • the preparation method of this light-emitting device is roughly the same as that of Example 1, except that the thickness of the cathode in this example is 120 nm.
  • This comparative example provides a light-emitting device, which differs from that of Example 1 only in that the electron transport material of this comparative example is ZnO.
  • the verification example is used to verify the performance of the light-emitting devices provided in Examples 1-7 and Comparative Example 1.
  • the light-emitting devices prepared in the above examples were tested for the efficiency and current density of the external quantum dots by conventional methods in the art, and the test results are shown in Table 1.
  • the current densities of the devices of Examples 1 to 7 are significantly lower than those of Comparative Example 1, indicating that the damage of the electron transport layer of the devices of Examples 1 to 7 is significantly smaller than that of Comparative Example 1. This is because PDAA has a dense stacked structure, and the zinc oxide nano-core The outer coated PDAA layer can absorb the high-energy particles brought by sputtering to a certain extent, thereby reducing the damage caused by sputtering to the electron transport layer.

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Abstract

Disclosed are a nanocomplex, a method for preparing the same, and a light-emitting device. The nanocomplex comprises a metal oxide nanocore and an electrically conductive polymer shell layer coating the metal oxide nanocore.

Description

纳米复合材料及其制备方法、发光器件Nanocomposite material and its preparation method, light-emitting device
本申请要求于2022年01月27日在中国专利局提交的、申请号为202210101471.6、申请名称为“纳米复合材料及其制备方法、发光器件”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with the application number 202210101471.6 and the application title "Nanocomposite material and its preparation method, light-emitting device" filed at the China Patent Office on January 27, 2022, the entire content of which is incorporated by reference incorporated in this application.
技术领域technical field
本申请涉及材料领域,具体涉及一种纳米复合材料及其制备方法、发光器件。The application relates to the field of materials, in particular to a nanocomposite material, a preparation method thereof, and a light emitting device.
背景技术Background technique
量子点(Quantum Dot,QD)是一种尺寸在1nm至10nm的半导体团簇,由于量子尺寸效应,人们通过调控量子点的大小来实现所需要的特定波长的发光,可应用于发光二极管、太阳能电池、生物荧光标记等领域。Quantum Dot (QD) is a semiconductor cluster with a size of 1nm to 10nm. Due to the quantum size effect, people can achieve the required specific wavelength of light by adjusting the size of the quantum dot. It can be applied to light-emitting diodes, solar energy Batteries, bioluminescence labeling and other fields.
在传统的量子点发光器件(Quantum dot light-emitting doit,QLED)中,电子和空穴分别从阴极和阳极注入,然后在量子点发光层复合形成激子发光。QLED具有色彩饱和度高、发光颜色可调、耗能低等一系列优点,已成为下一代显示器件的有力竞争者。In a traditional quantum dot light-emitting doit (QLED), electrons and holes are injected from the cathode and anode, respectively, and then recombine in the quantum dot light-emitting layer to form excitons to emit light. QLED has a series of advantages such as high color saturation, adjustable luminous color, and low energy consumption, and has become a strong competitor for the next generation of display devices.
然而,目前以QLED为代表的发光器件在研发过程中依旧存在着很多问题,例如发光器件的目前还存在漏电流的问题,以及发光效率有待提高。However, there are still many problems in the research and development process of light-emitting devices represented by QLEDs, such as leakage current problems in light-emitting devices, and luminous efficiency needs to be improved.
技术解决方案technical solution
因此,本申请提供一种纳米复合材料及其制备方法、发光器件。Therefore, the present application provides a nanocomposite material, a preparation method thereof, and a light emitting device.
本申请实施例提供一种纳米复合材料,其中,包括:The embodiment of the present application provides a nanocomposite material, including:
金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层。A metal oxide nano core, and a conductive polymer shell covering the metal oxide nano core.
可选的,在本申请的一些实施例中,所述纳米复合材料的粒径为10nm~15nm。Optionally, in some embodiments of the present application, the particle size of the nanocomposite material is 10 nm˜15 nm.
可选的,在本申请的一些实施例中,所述导电聚合物壳层的厚度为3nm~5nm。Optionally, in some embodiments of the present application, the thickness of the conductive polymer shell layer is 3 nm˜5 nm.
可选的,在本申请的一些实施例中,所述金属氧化物纳米核的粒径为7nm~10nm。Optionally, in some embodiments of the present application, the particle size of the metal oxide nano-core is 7nm-10nm.
可选的,在本申请的一些实施例中,所述导电聚合物为聚1,5-二氨基蒽醌、聚苯胺、聚(1-氨基蒽醌)或聚(2-氨基蒽醌)中的一种或多种。Optionally, in some embodiments of the present application, the conductive polymer is poly(1,5-diaminoanthraquinone), polyaniline, poly(1-aminoanthraquinone) or poly(2-aminoanthraquinone) one or more of .
可选的,在本申请的一些实施例中,所述金属氧化物选自:ZnO、TiO 2、SnO 2、Ta 2O 3、ZrO 2、NiO、TiLiO、ZnAlO、ZnMgO、ZnSnO、ZnLiO或InSnO中的一种或多种。 Optionally, in some embodiments of the present application, the metal oxide is selected from: ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, TiLiO, ZnAlO, ZnMgO, ZnSnO, ZnLiO or InSnO one or more of.
可选的,在本申请的一些实施例中,所述纳米复合材料由金属氧化物纳米核以及包覆所述金属氧化物纳米核的导电聚合物壳层构成。Optionally, in some embodiments of the present application, the nanocomposite material is composed of a metal oxide nanocore and a conductive polymer shell covering the metal oxide nanocore.
相应的,本申请实施例还提供一种纳米复合材料的制备方法,所述方法包括:Correspondingly, the embodiment of the present application also provides a method for preparing a nanocomposite material, the method comprising:
提供含有金属氧化物纳米颗粒的溶胶;以及providing a sol comprising metal oxide nanoparticles; and
在所述含有氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到所述纳米复合材料;adding a conductive polymer monomer and an oxidizing agent to the sol containing oxide nanoparticles, and performing a polymerization reaction to obtain the nanocomposite material;
其中,所述纳米复合材料包括金属氧化物纳米核以及包覆所述金属氧化物纳米核的导电聚合物壳层。Wherein, the nano-composite material includes a metal oxide nano-core and a conductive polymer shell covering the metal oxide nano-core.
可选的,在本申请的一些实施例中,所述导电聚合物单体与所述金属氧化物纳米颗粒的摩尔比为(1~5):20;和/或Optionally, in some embodiments of the present application, the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is (1-5):20; and/or
所述氧化剂与所述导电聚合物单体的摩尔比为(1~2):2;和/或The molar ratio of the oxidizing agent to the conductive polymer monomer is (1-2):2; and/or
所述氧化剂选自过硫酸铵或双氧水中的一种或多种;和/或The oxidant is selected from one or more of ammonium persulfate or hydrogen peroxide; and/or
所述导电聚合物单体为1,5-二氨基蒽醌、苯胺、1-氨基蒽醌或2-氨基蒽醌中的一种或多种;和/或The conductive polymer monomer is one or more of 1,5-diaminoanthraquinone, aniline, 1-aminoanthraquinone or 2-aminoanthraquinone; and/or
所述金属氧化物纳米颗粒溶胶包括所述金属氧化物纳米颗粒、表面活性剂和水,所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。The metal oxide nanoparticle sol includes the metal oxide nanoparticles, a surfactant and water, and the surfactant is selected from one of sodium dodecylsulfonate, sodium laurate or polyethylene glycol or more.
可选的,在本申请的一些实施例中,所述在所述含有金属氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到所述纳米复合材料,包括:Optionally, in some embodiments of the present application, adding a conductive polymer monomer and an oxidizing agent to the sol containing metal oxide nanoparticles to perform a polymerization reaction to obtain the nanocomposite material includes:
在所述含有氧化物纳米颗粒的溶胶中加入导电聚合物单体,并超声分散处 理,以获得中间混合溶液;Add conductive polymer monomers to the sol containing oxide nanoparticles, and ultrasonically disperse to obtain an intermediate mixed solution;
在所述中间混合溶液中加入所述氧化剂并混合处理,以进行聚合反应,得到所述纳米复合材料。The oxidizing agent is added into the intermediate mixed solution and mixed to carry out a polymerization reaction to obtain the nanocomposite material.
可选的,在本申请的一些实施例中,所述导电聚合物单体为1,5-二氨基蒽醌,所述混合处理的时间为5h~10h,温度为3℃~10℃;和/或Optionally, in some embodiments of the present application, the conductive polymer monomer is 1,5-diaminoanthraquinone, the mixing treatment time is 5h-10h, and the temperature is 3°C-10°C; and /or
所述超声分散处理的时间为5min~30min。The time for the ultrasonic dispersion treatment is 5 minutes to 30 minutes.
可选的,在本申请的一些实施例中,提供含有金属氧化物纳米颗粒的溶胶的步骤包括:Optionally, in some embodiments of the present application, the step of providing a sol containing metal oxide nanoparticles includes:
将沉淀剂的去离子水或乙二醇溶液与盐混合均匀,然后在120℃~180℃下水热反应5h~10h,产物冷却至室温后进行过滤,并分别用水、乙醇洗涤多次,然后再经干燥得到金属氧化物纳米颗粒;Mix the deionized water or ethylene glycol solution of the precipitating agent with the salt evenly, then hydrothermally react at 120°C-180°C for 5h-10h, filter the product after cooling to room temperature, and wash with water and ethanol for several times, and then Obtaining metal oxide nanoparticles through drying;
将所述金属氧化物纳米颗粒加入到表面活性剂的水溶液中,超声分散5min~30min,形成稳定分散的金属氧化物纳米颗粒溶胶。The metal oxide nanoparticles are added into the aqueous solution of the surfactant, and ultrasonically dispersed for 5 minutes to 30 minutes to form a stably dispersed metal oxide nanoparticle sol.
可选的,在本申请的一些实施例中,所述沉淀剂与盐的摩尔比为(1~2):6。Optionally, in some embodiments of the present application, the molar ratio of the precipitation agent to the salt is (1-2):6.
可选的,在本申请的一些实施例中,所述盐包括锌盐,所述锌盐包括乙酸锌、柠檬酸锌、乳酸锌中的一种或多种;Optionally, in some embodiments of the present application, the salt includes a zinc salt, and the zinc salt includes one or more of zinc acetate, zinc citrate, and zinc lactate;
所述的沉淀剂为尿素、六亚甲基四胺、四甲基氢氧化铵或氢氧化钠中的一种或多种;The precipitant is one or more of urea, hexamethylenetetramine, tetramethylammonium hydroxide or sodium hydroxide;
所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。The surfactant is selected from one or more of sodium dodecylsulfonate, sodium laurate or polyethylene glycol.
相应的,本申请实施例还提供一种发光器件,其中,包括:Correspondingly, the embodiment of the present application also provides a light emitting device, which includes:
依次层叠设置的阴极、电子传输层、发光层以及阳极;Cathode, electron transport layer, light-emitting layer and anode stacked in sequence;
其中,所述电子传输层的材料包括如上所述的纳米复合材料,或者包括由如上所述的方法制成的纳米复合材料。Wherein, the material of the electron transport layer includes the above-mentioned nanocomposite material, or includes the nanocomposite material made by the above-mentioned method.
可选的,在本申请的一些实施例中,所述阳极的材料选自铟掺杂氧化锡、氟掺杂氧化锡、锡掺杂氧化锌或铟掺杂氧化锌中的一种或多种;和/或Optionally, in some embodiments of the present application, the material of the anode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, tin-doped zinc oxide or indium-doped zinc oxide ;and / or
所述发光层的材料包括量子点,所述量子点选自II-VI族化合物、III-V族化合物和I-III-VI族化合物中的一种或多种,所述II-VI族化合物选自CdSe、 CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe、CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS;CdZnSeS、CdZnSeTe或CdZnSTe中的一种或多种;所述III-V族化合物选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP、InAsP、InNP、InNSb、GaAlNP或InAlNP中的一种或多种;所述I-III-VI族化合物选自CuInS 2、CuInSe 2或AgInS 2中的一种或多种;和/或 The material of the light-emitting layer includes quantum dots, the quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group compounds One or more selected from CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe or CdZnSTe; the III -V group compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP or InAlNP; the I-III-VI group compound is selected from CuInS 2 , CuInSe 2 or AgInS 2 or one or more; and/or
所述阴极的材料选自Al、Cu、Mo、Au、Ag或MoO 3中的一种或多种。 The material of the cathode is selected from one or more of Al, Cu, Mo, Au, Ag or MoO 3 .
可选的,在本申请的一些实施例中,所述发光器件还包括空穴传输层和空穴注入层,所述空穴注入层设于所述阳极和所述发光层之间,所述空穴传输层设于所述空穴注入层和所述发光层之间;Optionally, in some embodiments of the present application, the light emitting device further includes a hole transport layer and a hole injection layer, the hole injection layer is arranged between the anode and the light emitting layer, the a hole transport layer is disposed between the hole injection layer and the light emitting layer;
所述空穴注入层的材料选自PEDOT:PSS、NiO、MoO 3、WO 3或V 2O 5中的一种或多种; The material of the hole injection layer is selected from one or more of PEDOT:PSS, NiO, MoO 3 , WO 3 or V 2 O 5 ;
所述空穴传输层的材料选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)、聚乙烯咔唑、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)、4,4',4”-三(咔唑-9-基)三苯胺、4,4'-二(9-咔唑)联苯、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺中的一种或多种。The material of the hole transport layer is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'bis( 4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-benzenedi amine), 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N '-Bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1 , one or more of 1'-biphenyl-4,4'-diamine.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.
图1是本申请一实施例提供的一种纳米复合材料的制备方法的流程示意图;Fig. 1 is a schematic flow diagram of a preparation method of a nanocomposite material provided by an embodiment of the present application;
图2是本申请第一实施例提供的一种正型结构的发光器件;Fig. 2 is a light-emitting device with a positive structure provided in the first embodiment of the present application;
图3是本申请第二实施例提供的一种正型结构的发光器件;Fig. 3 is a light-emitting device with a positive structure provided in the second embodiment of the present application;
图4是本申请第三实施例提供的一种反型结构的发光器件;Fig. 4 is a light-emitting device with an inverted structure provided by the third embodiment of the present application;
图5是本申请实施例提供的一种纳米复合材料的TEM电镜图;Fig. 5 is the TEM electron microscope picture of a kind of nanocomposite material provided by the embodiment of the present application;
图6是本申请另一实施例提供的一种纳米复合材料的制备方法的流程示意 图;6 is a schematic flow diagram of a method for preparing a nanocomposite provided in another embodiment of the present application;
图7是本申请又一实施例提供的一种纳米复合材料的制备方法的流程示意图。Fig. 7 is a schematic flowchart of a method for preparing a nanocomposite material provided by another embodiment of the present application.
附图标记说明:Explanation of reference signs:
衬底:1;阳极:2;空穴注入层:3;空穴传输层:4;发光层:5;电子传输层:6;阴极:7。Substrate: 1; anode: 2; hole injection layer: 3; hole transport layer: 4; light emitting layer: 5; electron transport layer: 6; cathode: 7.
本申请的实施方式Embodiment of this application
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本申请保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.
需说明的是,以下实施例的描述顺序不作为对实施例优选顺序的限定。另外,在本申请的描述中,术语“包括”是指“包括但不限于”。It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to".
本申请的各种实施例可以以一个范围的型式存在;应当理解,以一范围型式的描述仅仅是因为方便及简洁,不应理解为对本申请范围的硬性限制;因此,应当认为所述的范围描述已经具体公开所有可能的子范围以及该范围内的单一数值。例如,应当认为从1到6的范围描述已经具体公开子范围,例如从1到3,从1到4,从1到5,从2到4,从2到6,从3到6等,以及所述范围内的单一数字,例如1、2、3、4、5及6,此不管范围为何皆适用。另外,每当在本文中指出数值范围,是指包括所指范围内的任何引用的数字(分数或整数)。Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of the application; therefore, the described range should be regarded as The description has specifically disclosed all possible subranges as well as individual values within that range. For example, a description of a range from 1 to 6 should be considered to have specifically disclosed subranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and Single numbers within the stated ranges, eg 1, 2, 3, 4, 5 and 6, apply regardless of the range. Additionally, whenever a numerical range is indicated herein, it is meant to include any cited numeral (fractional or integral) within the indicated range.
在本申请中,“一个或多个”是指一个或者多个,“多个”是指两个或两个以上。“一种或多种”、“以下至少一项(个)”或其类似表达,是指的这些项中的任意组合,包括单项(个)或复数项(个)的任意组合。例如,“a,b,或c中的至少一项(个)”,或,“a,b,和c中的至少一项(个)”,均可以表示:a,b,c,a-b(即a和b),a-c,b-c,或a-b-c,其中a,b,c分别可以是单个,也可以是多个。In this application, "one or more" means one or more, and "multiple" means two or more. "One or more", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items. For example, "at least one item (unit) of a, b, or c", or "at least one item (unit) of a, b, and c" can mean: a, b, c, a-b( That is, a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.
首先,本申请实施例提供一种纳米复合材料,包括:金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层。First, an embodiment of the present application provides a nanocomposite material, including: a metal oxide nanocore, and a conductive polymer shell covering the metal oxide nanocore.
实验发现,造成器件发光效率低等问题的主要原因在于材料性能的限制,空穴注入性能往往无法匹配电子注入,导致空穴-电子传输不平衡,发光层出现电子积累的现象,电子和空穴可能会在空穴传输层复合,器件发光效率会受到影响。此外实验还发现,发光器件制备阴极的较常用的方式为磁控溅射法,但磁控溅射的能量较高,在溅射阴极的过程中会导致电子传输层的轰击损伤,从而造成器件漏电流的问题。Experiments have found that the main reason for the low luminous efficiency of the device is the limitation of material properties. The hole injection performance often cannot match the electron injection, resulting in an imbalance in hole-electron transport, and the phenomenon of electron accumulation in the light-emitting layer. It may be recombined in the hole transport layer, and the luminous efficiency of the device will be affected. In addition, experiments have also found that the more commonly used method for preparing cathodes for light-emitting devices is magnetron sputtering, but the energy of magnetron sputtering is relatively high, and the process of sputtering cathodes will cause bombardment damage to the electron transport layer, resulting in device damage. The problem of leakage current.
本申请实施例通过将导电聚合物包覆在氧化物纳米颗粒的表面,得到一种纳米复合材料,将该纳米复合材料作为发光器件的电子传输层时,可降低电子的迁移率,从而帮助电子和空穴的平衡,帮助电子和空穴在发光层复合,提高器件的发光效率,提高器件的性能。此外,金属氧化物纳米核外包覆的导电聚合物作为一个保护层,可以一定程度上吸收溅射带来的高能粒子,从而防止在溅射阴极过程中对电子传输层的损伤,改善器件漏电流的问题。In the embodiment of the present application, a nanocomposite material is obtained by coating the surface of oxide nanoparticles with a conductive polymer. When the nanocomposite material is used as the electron transport layer of a light-emitting device, the mobility of electrons can be reduced, thereby helping electrons The balance of electrons and holes helps electrons and holes to recombine in the light-emitting layer, improving the luminous efficiency of the device and improving the performance of the device. In addition, as a protective layer, the conductive polymer coated on the metal oxide nano-core can absorb the high-energy particles brought by sputtering to a certain extent, thereby preventing damage to the electron transport layer during sputtering cathode and improving device leakage. current problem.
在一些实施例中,所述导电聚合物为聚1,5-二氨基蒽醌、聚苯胺、聚(1-氨基蒽醌)或聚(2-氨基蒽醌)中的一种或多种。进一步的,聚1,5-二氨基蒽醌(PDAA)材料具有更好的电学适配性,即电致发光方面与量子点的匹配程度更好,因此器件的性能提升的更好;此外,金属氧化物纳米核外包覆的聚1,5-二氨基蒽醌具有致密的堆叠结构,作为保护层可以更好的吸收溅射带来的高能粒子,从而防止在溅射阴极过程中对电子传输层的损伤,器件漏电流的问题的改善效果更加显著。In some embodiments, the conductive polymer is one or more of poly-1,5-diaminoanthraquinone, polyaniline, poly(1-aminoanthraquinone) or poly(2-aminoanthraquinone). Further, the poly 1,5-diaminoanthraquinone (PDAA) material has better electrical compatibility, that is, the matching degree of electroluminescence and quantum dots is better, so the performance of the device is improved better; in addition, The poly-1,5-diaminoanthraquinone coated on the metal oxide nano-core has a dense stacking structure, which can better absorb the high-energy particles brought by sputtering as a protective layer, thereby preventing electrons from being damaged during the sputtering cathode process. The damage of the transmission layer and the improvement effect of the leakage current of the device are more significant.
在一些实施例中,所述导电聚合物壳层的厚度为3nm~5nm(纳米)。若厚度太薄,则不能很好保护内部的金属氧化物纳米核;若太厚则影响器件性能。可以理解的是,所述导电聚合物壳层的厚度可以在3nm~5nm范围内任意取值,例如:3nm、3.5nm、4nm、4.5nm、5nm等,或是3nm~5nm范围内其他未列出的数值。In some embodiments, the thickness of the conductive polymer shell layer is 3nm-5nm (nanometer). If the thickness is too thin, the inner metal oxide nano-core cannot be well protected; if it is too thick, the performance of the device will be affected. It can be understood that the thickness of the conductive polymer shell layer can be any value within the range of 3nm to 5nm, for example: 3nm, 3.5nm, 4nm, 4.5nm, 5nm, etc., or other unlisted values within the range of 3nm to 5nm out the value.
在一些实施例中,所述金属氧化物纳米核的粒径为7nm~10nm。若金属氧化物纳米核的粒径太大则其能带太窄,与量子点能带匹配性会变差;若粒径太小则在制备过程中容易团聚,稳定性不佳。可以理解的是,所述金属氧化物纳米核的粒径为7nm~10nm范围内任意取值,例如:7nm、7.5nm、8nm、8.5nm、9nm、9.5nm、10nm等。或是7nm~10nm范围内其他未列出的数值。In some embodiments, the particle size of the metal oxide nano-core is 7nm-10nm. If the particle size of the metal oxide nano-core is too large, its energy band will be too narrow, and the energy band matching with quantum dots will become poor; if the particle size is too small, it will easily agglomerate during the preparation process, resulting in poor stability. It can be understood that the particle size of the metal oxide nano-core can be any value within the range of 7nm-10nm, for example: 7nm, 7.5nm, 8nm, 8.5nm, 9nm, 9.5nm, 10nm and so on. Or other unlisted values within the range of 7nm to 10nm.
在一些实施例中,所述纳米复合材料的粒径为10nm~15nm。在这个厚度范围下,器件的性能较好。可以理解的是,所述纳米复合材料的粒径可以在10nm、10.5nm、11nm、11.5nm、12nm、12.5nm、13nm、13.5nm、14nm、14.5nm、15nm等,或是10nm~15nm范围内其他未列出的数值。In some embodiments, the particle size of the nanocomposite material is 10nm-15nm. In this thickness range, the performance of the device is better. It can be understood that the particle size of the nanocomposite material can be 10nm, 10.5nm, 11nm, 11.5nm, 12nm, 12.5nm, 13nm, 13.5nm, 14nm, 14.5nm, 15nm, etc., or within the range of 10nm to 15nm Other values not listed.
在一些实施例中,所述金属氧化物可以为本领域已知的作为电子传输材料的掺杂或非掺杂的金属氧化物。例如,在一些具体实施例中,所述掺杂或非掺杂的金属氧化物选自但不限于:ZnO、TiO 2、SnO 2、Ta 2O 3、ZrO 2、NiO、TiLiO、ZnAlO、ZnMgO、ZnSnO、ZnLiO或InSnO中的一种或多种。在一些实施例中,所述金属氧化物为掺杂或非掺杂的ZnO,ZnO是一种优秀的半导体材料,是一种良好的电子传输层材料,具有较强的电子注入性能。将导电聚合物包覆ZnO对于改善空穴-电子传输不平衡具有显著的效果。 In some embodiments, the metal oxide may be a doped or non-doped metal oxide known in the art as an electron transport material. For example, in some specific embodiments, the doped or non-doped metal oxide is selected from but not limited to: ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, TiLiO, ZnAlO, ZnMgO , ZnSnO, ZnLiO or one or more of InSnO. In some embodiments, the metal oxide is doped or non-doped ZnO, and ZnO is an excellent semiconductor material, a good electron transport layer material, and has strong electron injection performance. Coating ZnO with conductive polymer has a significant effect on improving the hole-electron transport imbalance.
在一些实施例中,所述纳米复合材料由金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层构成。In some embodiments, the nanocomposite material is composed of a metal oxide nanocore, and a conductive polymer shell covering the metal oxide nanocore.
相应的,如图1所示,本申请实施例还提供一种纳米复合材料的制备方法,所述方法包括:Correspondingly, as shown in Figure 1, the embodiment of the present application also provides a method for preparing a nanocomposite material, the method comprising:
S10.提供含有金属氧化物纳米颗粒的溶胶;以及S10. providing a sol containing metal oxide nanoparticles; and
S20.在所述含有金属氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到纳米复合材料,其中,所述纳米复合材料包括金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层。S20. Add a conductive polymer monomer and an oxidant to the sol containing metal oxide nanoparticles, and perform a polymerization reaction to obtain a nanocomposite material, wherein the nanocomposite material includes a metal oxide nanocore, and a coating The conductive polymer shell of the metal oxide nanocore.
本申请实施例提供的方法通过在含有金属氧化物纳米颗粒的溶胶中加入导电聚合物单体(例如1,5-二氨基蒽醌)和氧化剂,使导电聚合物单体可以发生氧化聚合反应,从而生成导电聚合物(例如聚1,5-二氨基蒽醌)并覆盖在所述氧化物纳米颗粒的表面,得到一种纳米复合材料,将该纳米材料作为发光器件的电子传输层时,可降低电子迁移率,从而帮助电子和空穴的平衡,提高器件的发光效率,提高器件的性能。此外,导电聚合物可以作为一个保护层,防止在溅射阴极过程中对电子传输层的损伤,改善器件漏电流的问题。In the method provided in the embodiment of the present application, by adding a conductive polymer monomer (such as 1,5-diaminoanthraquinone) and an oxidizing agent to the sol containing metal oxide nanoparticles, the conductive polymer monomer can undergo oxidative polymerization reaction, Thereby, a conductive polymer (such as poly 1,5-diaminoanthraquinone) is generated and covered on the surface of the oxide nanoparticle to obtain a nanocomposite material. When the nanomaterial is used as an electron transport layer of a light-emitting device, it can Reduce electron mobility, thereby helping the balance of electrons and holes, improving the luminous efficiency of the device, and improving the performance of the device. In addition, the conductive polymer can be used as a protective layer to prevent damage to the electron transport layer during sputtering of the cathode and improve the leakage current of the device.
在一些实施例中,所述导电聚合物单体为1,5-二氨基蒽醌、苯胺、1-氨基蒽醌或2-氨基蒽醌中的一种或多种。In some embodiments, the conductive polymer monomer is one or more of 1,5-diaminoanthraquinone, aniline, 1-aminoanthraquinone or 2-aminoanthraquinone.
请参阅图7,在一些实施例中,所述步骤S10提供含有金属氧化物纳米颗 粒的溶胶,包括:Please refer to Figure 7, in some embodiments, the step S10 provides a sol containing metal oxide nanoparticles, including:
S11.将沉淀剂的去离子水或乙二醇溶液与盐混合均匀,然后在120℃~180℃下水热反应5h~10h,产物冷却至室温后进行过滤,并分别用水、乙醇洗涤多次,然后再经干燥得到金属氧化物纳米颗粒。S11. Mix the deionized water or ethylene glycol solution of the precipitating agent with the salt evenly, then hydrothermally react at 120°C-180°C for 5h-10h, filter the product after cooling to room temperature, and wash with water and ethanol several times respectively, Then it is dried to obtain metal oxide nanoparticles.
S12.将上述金属氧化物纳米颗粒加入到表面活性剂的水溶液中,超声分散5min~30min,形成稳定分散的金属氧化物纳米颗粒溶胶。S12. Add the above-mentioned metal oxide nanoparticles into the aqueous solution of the surfactant, and disperse ultrasonically for 5 minutes to 30 minutes to form a stable dispersed metal oxide nanoparticle sol.
在一些实施例中,所述沉淀剂与盐的摩尔比为(1~2):6。In some embodiments, the molar ratio of the precipitation agent to the salt is (1-2):6.
在一些实施例中,所述表面活性剂与金属氧化物纳米颗粒的摩尔比为1:4。In some embodiments, the molar ratio of the surfactant to the metal oxide nanoparticles is 1:4.
在一些实施例中,所述盐可以为锌盐,包括但不限于:乙酸锌、柠檬酸锌、乳酸锌中的一种或多种。In some embodiments, the salt may be a zinc salt, including but not limited to: one or more of zinc acetate, zinc citrate, and zinc lactate.
在一些实施例中,所述的沉淀剂为尿素、六亚甲基四胺、四甲基氢氧化铵或氢氧化钠中的一种或多种。In some embodiments, the precipitating agent is one or more of urea, hexamethylenetetramine, tetramethylammonium hydroxide or sodium hydroxide.
在一些实施例中,所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。In some embodiments, the surfactant is selected from one or more of sodium dodecylsulfonate, sodium laurate or polyethylene glycol.
请参阅图6,在一些实施例中,所述步骤S20在所述含有金属氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到纳米复合材料,包括:Please refer to FIG. 6, in some embodiments, the step S20 adds a conductive polymer monomer and an oxidant to the sol containing metal oxide nanoparticles, and performs a polymerization reaction to obtain a nanocomposite material, including:
S21.在所述含有氧化物纳米颗粒的溶胶中加入导电聚合物单体,超声分散处理,以获得中间混合溶液。S21. Add conductive polymer monomers to the sol containing oxide nanoparticles, and perform ultrasonic dispersion treatment to obtain an intermediate mixed solution.
S22.在所述中间混合溶液中再加入氧化剂并混合,以进行聚合反应,得到所述纳米复合材料。S22. Add an oxidizing agent to the intermediate mixed solution and mix to carry out a polymerization reaction to obtain the nanocomposite material.
在一些实施例中,得到所述纳米复合材料之后,还包括洗涤的步骤,洗涤的步骤可以配合抽滤进行。洗涤的目的在于去除未反应完的反应物或杂质,例如氧化剂。可以采用有机物和水进行洗涤,例如去离子水和甲醇进行洗涤。In some embodiments, after the nanocomposite material is obtained, a washing step is also included, and the washing step can be performed in conjunction with suction filtration. The purpose of washing is to remove unreacted reactants or impurities, such as oxidants. Organic matter and water can be used for washing, such as deionized water and methanol for washing.
在一些实施例中,所述导电聚合物单体与所述金属氧化物纳米颗粒的摩尔比为(1~5):20。若导电聚合物单体过少则不能完全包覆金属氧化物纳米颗粒;若过多则包覆厚度太厚影响器件性能。可以理解的是,所述导电聚合物单体与金属氧化物纳米颗粒的摩尔比为(1~5):20范围内的任意数值,例如1:20、 2:20、3:20、4:20、5:20等,或是(1~5):20范围内其他未列出的数值。In some embodiments, the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is (1˜5):20. If the conductive polymer monomer is too small, the metal oxide nanoparticles cannot be completely coated; if too much, the coating thickness is too thick and the device performance will be affected. It can be understood that the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is any value within the range of (1-5):20, such as 1:20, 2:20, 3:20, 4: 20, 5:20, etc., or other unlisted values within the range of (1~5):20.
在一些实施例中,所述氧化剂与所述导电聚合物单体的摩尔比为(1~2):2。若氧化剂过少,则不能完全聚合导电聚合物单体;若氧化剂过多,则又会在溶液中引入过多氧化剂,对后期洗涤造成影响。可以理解的是,所述氧化剂与导电聚合物单体的摩尔比可以为(1~2):2范围内的任意值,例如:1:2、1.1:2、1.2:2、1.3:2、1.4:2、1.5:2、1.6:2、1.7:2、1.8:2、1.9;2、2:2等,或是(1~2):2范围内其他未列出的数值。In some embodiments, the molar ratio of the oxidizing agent to the conductive polymer monomer is (1˜2):2. If there is too little oxidizing agent, the conductive polymer monomer cannot be completely polymerized; if there is too much oxidizing agent, too much oxidizing agent will be introduced into the solution, which will affect the later washing. It can be understood that the molar ratio of the oxidizing agent to the conductive polymer monomer can be any value within the range of (1-2):2, for example: 1:2, 1.1:2, 1.2:2, 1.3:2, 1.4: 2, 1.5: 2, 1.6: 2, 1.7: 2, 1.8: 2, 1.9; 2, 2: 2, etc., or other unlisted values within the range of (1~2): 2.
在一些实施例中,所述氧化剂选自过硫酸铵或双氧水中的一种或多种。In some embodiments, the oxidizing agent is selected from one or more of ammonium persulfate or hydrogen peroxide.
在一些实施例中,所述金属氧化物纳米颗粒溶胶包括所述金属氧化物纳米颗粒、表面活性剂和水,所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。In some embodiments, the metal oxide nanoparticle sol includes the metal oxide nanoparticles, a surfactant and water, and the surfactant is selected from sodium dodecylsulfonate, sodium laurate, or polyethylene glycol. One or more of diols.
在一些实施例中,当所述导电聚合物单体为1,5-二氨基蒽醌时,所述混合处理的时间为5h~10h(小时),混合的温度为3℃~10℃(摄氏度),因为导电聚合物单体的氧化聚合是放热反应,因此需要在较低温度下进行,若温度过低,则反应速度太慢;若温度过高,则合成的导电聚合物单体的表面粗糙,缺陷较多,影响器件的性能,可以理解的是,所述混合的温度为可以为3℃~10℃范围内任意取值,例如3℃、4℃、5℃、6℃、7℃、8℃、9℃、10℃,或是3℃~10℃范围内其他未列出的数值。当所述导电聚合物单体为苯胺、1-氨基蒽醌或2-氨基蒽醌时,混合处理的时间和混合的温度不受特别限制,只需满足形成所需的纳米复合材料即可。In some embodiments, when the conductive polymer monomer is 1,5-diaminoanthraquinone, the mixing treatment time is 5h-10h (hours), and the mixing temperature is 3°C-10°C (degrees Celsius ), because the oxidative polymerization of the conductive polymer monomer is an exothermic reaction, so it needs to be carried out at a lower temperature, if the temperature is too low, the reaction rate is too slow; if the temperature is too high, the synthetic conductive polymer monomer The surface is rough and there are many defects, which affect the performance of the device. It can be understood that the mixing temperature can be any value in the range of 3°C to 10°C, such as 3°C, 4°C, 5°C, 6°C, 7°C ℃, 8℃, 9℃, 10℃, or other unlisted values within the range of 3℃~10℃. When the conductive polymer monomer is aniline, 1-aminoanthraquinone or 2-aminoanthraquinone, the mixing treatment time and mixing temperature are not particularly limited, as long as the required nanocomposite material is formed.
在一些实施例中,所述超声分散处理的时间为5min~30min(分钟)。超声分散的目的在于将导电聚合物均匀的分散于氧化物纳米颗粒的溶胶中,可以理解的是,所述超声分散的时间可以在5min~30min范围内任意取值,例如5min、6min、7min、8min、9min、10min、11min、12min、13min、14min、15min、16min、17min、18min、19min、20min、21min、22min、23min、24min、25min、26min、27min、28min、29min、30min等,或是5min~30min范围内其他未列出的数值。In some embodiments, the time for the ultrasonic dispersion treatment is 5 minutes to 30 minutes (minutes). The purpose of ultrasonic dispersion is to uniformly disperse the conductive polymer in the sol of oxide nanoparticles. It can be understood that the time of ultrasonic dispersion can be arbitrarily selected within the range of 5min to 30min, such as 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min, 15min, 16min, 17min, 18min, 19min, 20min, 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min, 30min, etc., or 5min Other values not listed within the range of ~30min.
为了更好的理解,以氧化锌和1,5-二氨基蒽醌为例,以下为纳米复合材料的制备方法的具体的实施例:For a better understanding, taking zinc oxide and 1,5-diaminoanthraquinone as examples, the following are specific examples of the preparation method of nanocomposites:
(1)将沉淀剂的去离子水或乙二醇溶液与锌盐混合均匀,沉淀剂与锌盐的摩尔比为(1~2):6,其后在120℃~180℃下水热反应5h~10h;产物冷却至室温后进行过滤,并分别用水、乙醇洗涤3次,然后再经干燥得到纳米球状氧化锌。(1) Mix the deionized water or ethylene glycol solution of the precipitant with the zinc salt evenly, the molar ratio of the precipitant to the zinc salt is (1~2):6, and then react hydrothermally at 120°C~180°C for 5h ~10h; the product is cooled to room temperature, filtered, washed with water and ethanol three times, and then dried to obtain nano-spherical zinc oxide.
(2)将上述纳米球状氧化锌加入到表面活性剂的水溶液中,表面活性剂与纳米球状氧化锌按1:4的摩尔比,超声分散5min~30min,形成稳定分散的氧化锌溶胶。(2) Add the above-mentioned nano-spherical zinc oxide into the aqueous solution of the surfactant, and ultrasonically disperse the surfactant and the nano-spherical zinc oxide at a molar ratio of 1:4 for 5 minutes to 30 minutes to form a stable dispersed zinc oxide sol.
(3)控制1,5-二氨基蒽醌与纳米氧化锌的摩尔比为(1~5):20,将1,5-二氨基蒽醌单体溶于去离子水中,而后加入到氧化锌溶胶中,超声分散10min~30min。(3) Control the molar ratio of 1,5-diaminoanthraquinone to nano-zinc oxide to (1~5):20, dissolve 1,5-diaminoanthraquinone monomer in deionized water, and then add it to zinc oxide In the sol, ultrasonically disperse for 10min to 30min.
(4)持续搅拌下再加入氧化剂进行聚合反应,氧化剂与1,5-二氨基蒽醌为(1~2):2的摩尔比,在3℃~10℃温度下搅拌反应5h~10h后,分别用去离子水、甲醇反复洗涤5次,得到聚1,5-二氨基蒽醌包覆氧化锌的纳米复合材料,然后分散于乙醇溶液中待用。(4) Add an oxidizing agent under continuous stirring to carry out the polymerization reaction. The molar ratio of the oxidizing agent and 1,5-diaminoanthraquinone is (1-2): 2. After stirring and reacting at a temperature of 3°C-10°C for 5h-10h, Repeated washing with deionized water and methanol for 5 times respectively to obtain a nanocomposite material of zinc oxide coated with poly-1,5-diaminoanthraquinone, and then dispersed in ethanol solution for use.
如图2至图4所示,本申请还提供一种发光器件,包括:阴极7、阳极2以及设在所述阴极7和阳极2之间的电子传输层6和发光层5,所述发光层5靠近所述阳极2设置,所述电子传输层6靠近所述阴极7设置,所述电子传输层6的材料包括以上任一项实施例所述的纳米复合材料,或者包括以上任一项所述的方法制成的纳米复合材料。As shown in Figures 2 to 4, the present application also provides a light-emitting device, including: a cathode 7, an anode 2, and an electron transport layer 6 and a light-emitting layer 5 arranged between the cathode 7 and the anode 2, the light-emitting Layer 5 is disposed close to the anode 2, the electron transport layer 6 is disposed close to the cathode 7, and the material of the electron transport layer 6 includes the nanocomposite material described in any of the above embodiments, or includes any of the above Nanocomposites made by the method described.
在一些具体实施例中,所述发光器件为量子点发光器件(QLED)。In some specific embodiments, the light emitting device is a quantum dot light emitting device (QLED).
本申请实施例所述发光器件可以是正型结构,也可以是反型结构。在发光器件中,阴极7或阳极2远离所述发光层5一侧还包括衬底1,在正型结构中阳极2设置在衬底1上,在反型结构中阴极7设置在衬底1上。所述阳极2和所述发光层5之间还可以设置空穴传输层4和空穴注入层3等空穴功能层。例如:The light-emitting device described in the embodiments of the present application may have a positive structure or an inverse structure. In the light-emitting device, the side of the cathode 7 or the anode 2 away from the light-emitting layer 5 also includes the substrate 1, the anode 2 is arranged on the substrate 1 in the positive structure, and the cathode 7 is arranged on the substrate 1 in the inverse structure superior. A hole functional layer such as a hole transport layer 4 and a hole injection layer 3 may also be provided between the anode 2 and the light emitting layer 5 . For example:
图3示出了本申请实施例所述发光器件的一种正型结构示意图,如图3所示,所述正型结构的器件包括衬底1、设在所述衬底1表面的阳极2、设在所述阳极2表面的空穴注入层3、设置在所述空穴注入层3表面的空穴传输层4、设在所述空穴传输层4表面的发光层5、设在所述发光层5表面的电子传输层6及设在 所述电子传输层6表面的阴极7,其中,所述电子传输层6的材料选自纳米复合材料。Fig. 3 shows a schematic diagram of a positive structure of the light-emitting device described in the embodiment of the present application. As shown in Fig. 3, the device of the positive structure includes a substrate 1 and an anode 2 arranged on the surface of the substrate 1 , the hole injection layer 3 arranged on the surface of the anode 2, the hole transport layer 4 arranged on the surface of the hole injection layer 3, the light emitting layer 5 arranged on the surface of the hole transport layer 4, and the The electron transport layer 6 on the surface of the light-emitting layer 5 and the cathode 7 disposed on the surface of the electron transport layer 6, wherein the material of the electron transport layer 6 is selected from nanocomposite materials.
图4示出了本申请实施例所述发光器件的一种反型结构示意图,如图4所示,所述反型结构发光器件包括衬底1、设在所述衬底1表面的阴极7、设在所述阴极7表面的电子传输层6、设在所述电子传输层6表面的发光层5、设在所述发光层5表面的空穴传输层4及设在所述空穴传输层4表面的空穴注入层3以及阳极2,其中,所述电子传输层6材料选自纳米复合材料。Fig. 4 shows a schematic diagram of an inverse structure of the light emitting device according to the embodiment of the present application. As shown in Fig. 4, the inversion structure light emitting device includes a substrate 1 and a cathode 7 arranged on the surface of the substrate 1 , the electron transport layer 6 arranged on the surface of the cathode 7, the light emitting layer 5 arranged on the surface of the electron transport layer 6, the hole transport layer 4 arranged on the surface of the light emitting layer 5 and the hole transport layer 4 arranged on the surface of the hole transport The hole injection layer 3 and the anode 2 on the surface of the layer 4, wherein the material of the electron transport layer 6 is selected from nanocomposite materials.
本申请各实施例中,各个功能层的材料可以为以下材料,例如:In each embodiment of the present application, the material of each functional layer may be the following materials, for example:
所述衬底1可以是刚性衬底,也可以是柔性衬底。具体材料可以包括玻璃、硅晶片、聚碳酸酯、聚甲基烯酸甲酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚酰胺、聚醚砜中的一种或多种。The substrate 1 can be a rigid substrate or a flexible substrate. Specific materials may include one of glass, silicon wafer, polycarbonate, polymethylmethacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone or more.
所述阳极2选自铟掺杂氧化锡、氟掺杂氧化锡、锡掺杂氧化锌或铟掺杂氧化锌中的一种或多种。The anode 2 is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, tin-doped zinc oxide or indium-doped zinc oxide.
空穴注入层3的材料选自PEDOT:PSS,也可以是其它具有良好空穴注入性能的材料,例如NiO、MoO 3、WO 3或V 2O 5中的一种或多种。 The material of the hole injection layer 3 is selected from PEDOT:PSS, or other materials with good hole injection properties, such as one or more of NiO, MoO 3 , WO 3 or V 2 O 5 .
空穴传输层4材料选自但不限于聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、聚乙烯咔唑(PVK)、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)(Poly-TPD)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)(PFB)、4,4',4”-三(咔唑-9-基)三苯胺(TCTA)、4,4'-二(9-咔唑)联苯(CBP)、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺(TPD)、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺(NPB)中的一种或多种,或者是其它高性能的空穴传输材料。The material of the hole transport layer 4 is selected from but not limited to poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), poly (N,N'bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine)(Poly-TPD), poly(9,9-dioctylfluorene-co-bis-N , N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCTA), 4,4'-bis(9- Carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD ), one or more of N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), or Is other high performance hole transport material.
所述发光层5的材料包括量子点,所述量子点选自II-VI族化合物、III-V族化合物和I-III-VI族化合物中的一种或多种,所述II-VI族化合物选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe、CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS;CdZnSeS、CdZnSeTe或CdZnSTe中的一种或多种;所述III-V族化合物选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP、InAsP、InNP、InNSb、GaAlNP或InAlNP中的一种或多种;所述I-III-VI族化合物选自CuInS 2、CuInSe 2或AgInS 2中的一种或多种。 The material of the light-emitting layer 5 includes quantum dots, the quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group The compound is selected from one or more of CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe or CdZnSTe; The III-V group compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP or InAlNP; the I-III-VI group compound is selected from CuInS 2. One or more of CuInSe 2 or AgInS 2 .
所述阴极7选自Al、Cu、Mo、Au、Ag或MoO 3中的一种或多种。 The cathode 7 is selected from one or more of Al, Cu, Mo, Au, Ag or MoO 3 .
在一些实施例中,所述阴极为利用磁控溅射法制备的阴极7。In some embodiments, the cathode is the cathode 7 prepared by magnetron sputtering.
在一些实施例中,所述电子传输层的厚度为15~30nm,若电子传输层太薄则溅射伤害可能会穿过电子传输层而伤害到发光层,若电子传输层太厚则会使器件电阻变大,降低器件性能,可以理解的是,所述电子传输层的厚度可以在为15nm~30nm范围内任意取值,例如15nm、16nm、17nm、18nm、19nm、20nm、21nm、22nm、23nm、24nm、25nm、26nm、27nm、28nm、29nm、30nm等,或是15nm~30nm范围内其他未列出的任意取值。In some embodiments, the thickness of the electron transport layer is 15-30nm. If the electron transport layer is too thin, the sputtering damage may pass through the electron transport layer and damage the light-emitting layer. If the electron transport layer is too thick, it will cause The resistance of the device increases, which reduces the performance of the device. It can be understood that the thickness of the electron transport layer can be arbitrarily selected within the range of 15nm to 30nm, such as 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, 30nm, etc., or any other unlisted value within the range of 15nm to 30nm.
相应的,本申请还提供一种发光器件的制备方法,该发光器件具体可以为正型结构的发光器件也可以为反型结构的发光器件,具体的,该正型结构的发光器件的制备方法包括如下步骤:Correspondingly, the present application also provides a method for preparing a light-emitting device. Specifically, the light-emitting device may be a light-emitting device with a positive structure or a light-emitting device with an inverse structure. Specifically, the method for preparing a light-emitting device with a positive structure Including the following steps:
(1)在阳极基板上沉积发光层。(1) Deposit a light-emitting layer on the anode substrate.
(2)利用电子传输层材料的溶液,在所述发光层上沉积电子传输层。(2) Depositing an electron transport layer on the light-emitting layer using a solution of the electron transport layer material.
(3)在所述电子传输层上制备阴极,获得所述发光器件。(3) preparing a cathode on the electron transport layer to obtain the light-emitting device.
反型结构的发光器件的制备方法包括如下步骤:A method for preparing a light-emitting device with an inverted structure includes the following steps:
(1)利用电子传输层材料的溶液,在阴极上沉积电子传输层。(1) An electron transport layer is deposited on the cathode using a solution of the electron transport layer material.
(2)在所述电子传输层上沉积发光层。(2) A light emitting layer is deposited on the electron transport layer.
(3)在所述发光层上制备阳极,获得所述发光器件。(3) preparing an anode on the light-emitting layer to obtain the light-emitting device.
所述电子传输层材料的溶液包括纳米复合材料和有机溶剂,所述有机溶剂可以为醇类化合物,例如乙醇。所述纳米复合材料包括:金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层,关于纳米复合材料和其制备方法在前面实施例中已做详细的介绍,此处不作赘述。The solution of the material for the electron transport layer includes nanocomposite materials and an organic solvent, and the organic solvent may be an alcohol compound, such as ethanol. The nano-composite material includes: a metal oxide nano-core, and a conductive polymer shell covering the metal oxide nano-core. The nano-composite material and its preparation method have been described in detail in the previous embodiment. Here I won't go into details here.
不管是正型还是反型的器件,在本申请中,制备所述发光器件上的各功能层的方法可采用本领域已知的方法实现,例如化学法和物理法,其中化学法包括:化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法。物理法包括物理镀膜法和溶液加工法。具体的物理镀膜法包括:热蒸发镀膜法、电子束蒸发镀膜法、磁控溅射法、多弧离子镀膜法、物理气相沉积法、原子层沉积法、脉冲激光沉积法等。溶液加工法包括旋涂法、印刷法、喷墨打印法、刮涂法、打印法、浸渍提拉法、浸泡法、喷涂法、滚涂法、浇铸法、狭缝式涂布法、条状涂布法。Regardless of whether it is a positive or reverse device, in this application, the method for preparing each functional layer on the light-emitting device can be realized by methods known in the art, such as chemical methods and physical methods, wherein chemical methods include: chemical vapor phase Deposition method, continuous ion layer adsorption and reaction method, anodic oxidation method, electrolytic deposition method, co-precipitation method. Physical methods include physical coating methods and solution processing methods. Specific physical coating methods include: thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, pulsed laser deposition method, etc. Solution processing methods include spin coating method, printing method, inkjet printing method, blade coating method, printing method, dipping method, soaking method, spraying method, roller coating method, casting method, slit coating method, strip coating method coating method.
例如,在一些具体实施例中,所述发光器件上的各功能层利用溶液法中的旋涂法来制备,利用旋涂法进行的制备需要先配置好各功能层材料的溶液,将待旋涂的片子置于旋涂仪上,将配置好功能层材料的溶液滴加至旋涂仪上方,以预设的转速进行旋涂,热处理后完成功能层的制备。旋涂法具有工艺条件温和、操作简单、节能环保等特点,其制备发光器件具有载流子迁移率高、厚度精确等优势。For example, in some specific embodiments, each functional layer on the light-emitting device is prepared by the spin-coating method in the solution method, and the preparation by the spin-coating method needs to prepare the solution of each functional layer material first, and then spin The coated sheet is placed on a spin coater, and the solution configured with functional layer materials is dropped onto the top of the spin coater, spin-coated at a preset speed, and the preparation of the functional layer is completed after heat treatment. The spin coating method has the characteristics of mild process conditions, simple operation, energy saving and environmental protection, and its preparation of light-emitting devices has the advantages of high carrier mobility and precise thickness.
为了更好的理解本申请,以下为以正型的发光器件为例,利用旋涂法制备各功能层的具体步骤:In order to better understand this application, the following are the specific steps for preparing each functional layer by using the spin-coating method, taking a positive light-emitting device as an example:
首先,在衬底上制作阳极,然后在处理过的基板表面旋涂一层空穴注入层;将旋涂了空穴注入层的基板置于氮气气氛中,在空穴注入层表面旋涂一层空穴传输层;随后,在空穴传输层上旋涂一层发光层;在发光层上旋涂一层纳米复合材料作为电子传输层;最后,利用磁控溅射法在旋涂了电子传输层的基板上溅射一层阴极,得到发光器件。First, make an anode on the substrate, and then spin-coat a layer of hole injection layer on the surface of the treated substrate; place the substrate with the spin-coated hole injection layer in a nitrogen atmosphere, and spin-coat a hole injection layer on the surface of the hole injection layer. A layer of hole transport layer; then, a light-emitting layer is spin-coated on the hole-transport layer; a nanocomposite material is spin-coated on the light-emitting layer as an electron transport layer; finally, electrons are spin-coated by magnetron sputtering A layer of cathode is sputtered on the substrate of the transport layer to obtain a light emitting device.
在反型的发光器件的制备方法与正型的类似,区别仅在于各功能层沉积的顺序不同,此处不再赘述。The preparation method of the reverse type light emitting device is similar to that of the positive type, the difference is only in the deposition sequence of the functional layers, which will not be repeated here.
下面通过实施例对本申请进行详细说明。The present application will be described in detail below through examples.
实施例1Example 1
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备步骤如下:The preparation steps of this nanocomposite material are as follows:
取200mg醋酸锌溶于50mL去离子水中,另取70mg六亚甲基四胺溶于50mL去离子水中,将上述两种溶液混合,搅拌5分钟,随后转移到200m1水热反应釜中,保持水热反应温度160℃,反应8小时后自然冷却,取出抽滤,用去离子水和乙醇洗涤多次后烘干即得到纳米球状氧化锌颗粒。取84mg十二烷基磺酸钠溶于50mL去离子水中,另取100mg纳米氧化锌加入上述溶液中,超声搅拌10分钟使氧化锌形成稳定分散的纳米溶胶,将上述溶胶至于5℃保温箱中,持续搅拌,加入15mgPDAA单体,搅拌30分钟使其充分溶解,另取10mg过硫酸铵溶于10mL去离子水中,将过硫酸铵溶液逐滴加入到含有PDAA单体的纳米氧化锌溶胶中,添加完毕后继续搅拌反应8小时,反应结束后用去离子水及甲醇进行反复抽滤、洗涤,得到包覆有聚1,5-二氨基蒽醌壳层的氧化 锌纳米核的纳米复合材料,并分散于乙醇溶液中保留待用。Dissolve 200mg of zinc acetate in 50mL of deionized water, and dissolve another 70mg of hexamethylenetetramine in 50mL of deionized water, mix the above two solutions, stir for 5 minutes, then transfer to a 200m1 hydrothermal reaction kettle, keep the water The thermal reaction temperature is 160°C. After 8 hours of reaction, it is naturally cooled, taken out for suction filtration, washed with deionized water and ethanol for several times, and then dried to obtain nano-spherical zinc oxide particles. Dissolve 84mg of sodium dodecylsulfonate in 50mL of deionized water, add another 100mg of nano-zinc oxide to the above solution, stir ultrasonically for 10 minutes to form a stable dispersed nano-sol of zinc oxide, and place the above-mentioned sol in a 5°C incubator , continue to stir, add 15mg of PDAA monomer, stir for 30 minutes to fully dissolve it, take another 10mg of ammonium persulfate and dissolve it in 10mL of deionized water, add the ammonium persulfate solution dropwise to the nano-zinc oxide sol containing PDAA monomer, After the addition was completed, the stirring reaction was continued for 8 hours. After the reaction was completed, repeated suction filtration and washing were performed with deionized water and methanol to obtain a nanocomposite material of zinc oxide nano-cores coated with poly-1,5-diaminoanthraquinone shells. And dispersed in ethanol solution and reserved for later use.
经过粒径检测仪检测,纳米复合材料的粒径为10nm~15nm,TEM图如图5所示,说明成功制备了纳米复合材料。其他实施例的粒径和电镜图与本实施例大致相同。After being detected by a particle size detector, the particle size of the nanocomposite material is 10nm-15nm, and the TEM image is shown in Figure 5, indicating that the nanocomposite material was successfully prepared. The particle diameters and electron micrographs of other examples are roughly the same as those of this example.
该发光器件的制备方法如下:The preparation method of the light-emitting device is as follows:
(1)首先,将图案化的ITO基板(包括阳极和衬底)按次序置于丙酮,洗液,去离子水以及异丙醇中进行超声清洗,以上每一步超声均需持续15分钟左右。待超声完成后将ITO基板放置于洁净烘箱内烘干备用。(1) First, place the patterned ITO substrate (including the anode and the substrate) in acetone, lotion, deionized water and isopropanol in order for ultrasonic cleaning, and each step of ultrasonic cleaning needs to last for about 15 minutes. After the ultrasound is completed, place the ITO substrate in a clean oven to dry for later use.
(2)待ITO基板烘干后,用紫外-臭氧处理ITO基板表面5分钟,以进一步除去ITO基板表面附着的有机物,并提高ITO的功函数。(2) After the ITO substrate is dried, treat the surface of the ITO substrate with UV-ozone for 5 minutes to further remove the organic matter attached to the surface of the ITO substrate and improve the work function of the ITO.
(3)在处理过的ITO基板表面沉积一层PEDOT:PSS,作为空穴注入层,此层厚度30nm,并将ITO基板置于150℃的加热台上加热30分钟以除去水分,此步需在空气中完成。(3) Deposit a layer of PEDOT:PSS on the surface of the treated ITO substrate as a hole injection layer. Done in the air.
(4)将干燥后的涂有空穴注入层的ITO基板置于氮气气氛中,沉积一层空穴传输层TFB,此层的厚度为30nm,并将其置于150℃的加热台上加热30分钟以除去溶剂。(4) Place the dried ITO substrate coated with the hole injection layer in a nitrogen atmosphere to deposit a hole transport layer TFB with a thickness of 30nm, and place it on a heating platform at 150°C for heating 30 min to remove solvent.
(5)待上一步处理的片子冷却后,将发光层沉积TFB层上,其厚度为30nm。这一步的沉积完成后将片子放置在100℃的加热台上加热10分钟,除去残留的溶剂。(5) After the sheet treated in the previous step is cooled, deposit the luminescent layer on the TFB layer with a thickness of 30 nm. After the deposition of this step is completed, place the sheet on a heating platform at 100° C. for 10 minutes to remove residual solvent.
(6)待上一步处理的片子冷却后,在发光层上沉积30nm的纳米复合材料作为电子传输层,至于加热板上80℃退火30min。(6) After cooling the sheet treated in the previous step, deposit 30nm nanocomposite material on the light-emitting layer as the electron transport layer, and anneal at 80°C for 30min on the heating plate.
(7)采用磁控溅射法在电子传输层上沉积形成厚80nm的Ag电极;用紫外固化胶进行简单封装,制得发光器件。(7) The Ag electrode with a thickness of 80nm is deposited on the electron transport layer by magnetron sputtering; the light-emitting device is obtained by simply encapsulating it with an ultraviolet curing adhesive.
实施例2Example 2
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备步骤如下:The preparation steps of this nanocomposite material are as follows:
取400mg醋酸锌溶于50mL去离子水中,另取70mg六亚甲基四胺溶于50mL去离子水中,将上述两种溶液混合,搅拌5分钟,随后转移到200mL水热反应釜中,保持水热反应温度160℃,反应8小时后自然冷却,取出抽滤, 用去离子水和乙醇洗涤多次后烘干即得到纳米球状氧化锌颗粒。取100mg纳米氧化锌加入40mL聚乙二醇,超声搅拌10分钟使氧化锌形成稳定分散的纳米溶胶,将上述溶胶至于5℃保温箱中,持续搅拌,加入30mgPDAA单体,搅拌30分钟使其充分溶解,另取30mg过硫酸铵溶于10mL去离子水中,将过硫酸铵溶液逐滴加入到含有PDAA单体的纳米氧化锌溶胶中,添加完毕后继续搅拌反应8小时,反应结束后用去离子水及甲醇进行反复抽滤、洗涤,得到包覆有聚1,5-二氨基蒽醌壳层的氧化锌纳米核的纳米复合材料,并分散于乙醇溶液中。Dissolve 400mg of zinc acetate in 50mL of deionized water, and dissolve another 70mg of hexamethylenetetramine in 50mL of deionized water, mix the above two solutions, stir for 5 minutes, then transfer to a 200mL hydrothermal reaction kettle, keep the water The thermal reaction temperature is 160°C. After 8 hours of reaction, it is naturally cooled, taken out for suction filtration, washed with deionized water and ethanol for several times, and then dried to obtain nano-spherical zinc oxide particles. Take 100mg of nano-zinc oxide and add 40mL of polyethylene glycol, and stir ultrasonically for 10 minutes to make the zinc oxide form a stable and dispersed nano-sol. Dissolve another 30 mg of ammonium persulfate in 10 mL of deionized water, add the ammonium persulfate solution dropwise to the nano-zinc oxide sol containing PDAA monomer, continue to stir and react for 8 hours after the addition, and use deionized Water and methanol are subjected to repeated suction filtration and washing to obtain a nanocomposite material of zinc oxide nano-cores coated with poly-1,5-diaminoanthraquinone shells, which is then dispersed in ethanol solution.
该发光器件的制备方法与实施例1相同。The preparation method of the light-emitting device is the same as that of Example 1.
实施例3Example 3
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
纳米复合材料的制备步骤如下:The preparation steps of nanocomposites are as follows:
取300mg醋酸锌溶于50mL去离子水中,另取40mg四甲基氢氧化铵溶于50m1去离子水中,将上述两种溶液混合,搅拌5分钟,随后转移到200m1水热反应釜中,保持水热反应温度160℃,反应8小时后自然冷却,取出抽滤,用去离子水和乙醇洗涤多次后烘干即得到纳米球状氧化锌颗粒。取84mg十二烷基磺酸钠溶于50mL去离子水中,另取100mg纳米氧化锌加入上述溶液中,超声搅拌10分钟使氧化锌形成稳定分散的纳米溶胶,将上述溶胶至于5℃保温箱中,持续搅拌,加入50mgPDAA单体,搅拌30分钟使其充分溶解,另取30mg过硫酸铵溶于10mL去离子水中,将过硫酸铵溶液逐滴加入到含有PDAA单体的纳米氧化锌溶胶中,添加完毕后继续搅拌反应8小时,反应结束后用去离子水及甲醇进行反复抽滤、洗涤,得到包覆有聚1,5-二氨基蒽醌壳层的氧化锌纳米核的纳米复合材料,并分散于乙醇溶液中。Dissolve 300mg of zinc acetate in 50mL of deionized water, and another 40mg of tetramethylammonium hydroxide in 50m1 of deionized water, mix the above two solutions, stir for 5 minutes, then transfer to a 200m1 hydrothermal reaction kettle, keep the water The thermal reaction temperature is 160°C. After 8 hours of reaction, it is naturally cooled, taken out for suction filtration, washed with deionized water and ethanol for several times, and then dried to obtain nano-spherical zinc oxide particles. Dissolve 84mg of sodium dodecylsulfonate in 50mL of deionized water, add another 100mg of nano-zinc oxide to the above solution, stir ultrasonically for 10 minutes to form a stable dispersed nano-sol of zinc oxide, and place the above-mentioned sol in a 5°C incubator , continue to stir, add 50mg of PDAA monomer, stir for 30 minutes to fully dissolve it, take another 30mg of ammonium persulfate and dissolve it in 10mL of deionized water, add the ammonium persulfate solution dropwise to the nano-zinc oxide sol containing PDAA monomer, After the addition was completed, the stirring reaction was continued for 8 hours. After the reaction was completed, repeated suction filtration and washing were performed with deionized water and methanol to obtain a nanocomposite material of zinc oxide nano-cores coated with poly-1,5-diaminoanthraquinone shells. And dispersed in ethanol solution.
该发光器件的制备方法与实施例1相同。The preparation method of the light-emitting device is the same as that of Example 1.
实施例4Example 4
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备方法与实施例1相同。The preparation method of the nanocomposite is the same as that of Example 1.
该发光器件的制备方法与实施例1大致相同,区别仅在于电子传输层的厚度为20nm。The preparation method of this light-emitting device is roughly the same as that of Example 1, except that the thickness of the electron transport layer is 20 nm.
实施例5Example 5
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备方法与实施例1相同。The preparation method of the nanocomposite is the same as that of Example 1.
该发光器件的制备方法与实施例1大致相同,区别仅在于本实施例电子传输层的厚度为15nm。The preparation method of the light-emitting device is roughly the same as that of Example 1, except that the thickness of the electron transport layer in this example is 15 nm.
实施例6Example 6
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备方法与实施例1相同。The preparation method of the nanocomposite is the same as that of Example 1.
该发光器件的制备方法与实施例1大致相同,区别仅在于本实施例阴极的厚度为100nm。The preparation method of the light-emitting device is roughly the same as that of Example 1, except that the thickness of the cathode in this example is 100 nm.
实施例7Example 7
本实施例提供一种纳米复合材料和发光器件。This embodiment provides a nanocomposite material and a light emitting device.
该纳米复合材料的制备方法与实施例1相同。The preparation method of the nanocomposite is the same as that of Example 1.
该发光器件的制备方法与实施例1大致相同,区别仅在于本实施例阴极的厚度为120nm。The preparation method of this light-emitting device is roughly the same as that of Example 1, except that the thickness of the cathode in this example is 120 nm.
对比例1Comparative example 1
本对比例提供一种发光器件,与实施例1的区别仅在于本对比例的电子传输材料为ZnO。This comparative example provides a light-emitting device, which differs from that of Example 1 only in that the electron transport material of this comparative example is ZnO.
验证例Verification example
验证例用于验证实施例1~7以及对比例1提供的发光器件的性能。The verification example is used to verify the performance of the light-emitting devices provided in Examples 1-7 and Comparative Example 1.
将以上实施例中制备的发光器件采用本领域常规的方法进行外量子点效率和电流密度的测试,测试结果如表1所示。The light-emitting devices prepared in the above examples were tested for the efficiency and current density of the external quantum dots by conventional methods in the art, and the test results are shown in Table 1.
表1Table 1
Figure PCTCN2022128627-appb-000001
Figure PCTCN2022128627-appb-000001
Figure PCTCN2022128627-appb-000002
Figure PCTCN2022128627-appb-000002
如表1所示,将实施例1~7与对比例1进行比较,实施例1~7的器件的效率明显优于对比例1,说明经过PDAA包覆的氧化锌纳米核应用于器件的电子传输层后,器件性能有明显提高,这是由于PDAA包覆氧化锌纳米核后,可降低电子的迁移率,从而帮助电子和空穴的平衡所导致的。As shown in Table 1, comparing Examples 1 to 7 with Comparative Example 1, the efficiency of the devices of Examples 1 to 7 is significantly better than that of Comparative Example 1, indicating that the zinc oxide nano-nucleus coated with PDAA is applied to the electronic components of the device. After the transport layer, the performance of the device is significantly improved, which is due to the PDAA coating the zinc oxide nano-core, which can reduce the mobility of electrons, thereby helping the balance of electrons and holes.
一般而言,IV电压下的电流密度值越大,说明器件的漏电现象越严重,而器件漏电主要是电子传输层漏电,所以1V下电流密度数值越低说明电子传输层损伤越小,而实施例1~7的器件的电流密度明显低于对比例1,说明实施例1~7的器件的电子传输层的损伤明显小于对比例1,这是由于PDAA具有致密的堆叠结构,氧化锌纳米核外包覆的PDAA层可以一定程度上吸收溅射带来的高能粒子,从而降低溅射对电子传输层带来的损伤所导致的。Generally speaking, the larger the current density value under the IV voltage, the more serious the leakage of the device, and the leakage of the device is mainly the leakage of the electron transport layer, so the lower the value of the current density at 1V, the smaller the damage of the electron transport layer. The current densities of the devices of Examples 1 to 7 are significantly lower than those of Comparative Example 1, indicating that the damage of the electron transport layer of the devices of Examples 1 to 7 is significantly smaller than that of Comparative Example 1. This is because PDAA has a dense stacked structure, and the zinc oxide nano-core The outer coated PDAA layer can absorb the high-energy particles brought by sputtering to a certain extent, thereby reducing the damage caused by sputtering to the electron transport layer.
以上对本申请实施例所提供的一种纳米复合材料及其制备方法、发光器件进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。A kind of nanocomposite material provided by the embodiment of the present application and its preparation method and light-emitting device have been introduced in detail above. The principle and implementation mode of the application have been explained by using specific examples in this paper. The description of the above embodiment is only used To help understand the technical solutions and core ideas of the present application; those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these The modification or replacement does not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (17)

  1. 一种纳米复合材料,其中,包括:A nanocomposite material, comprising:
    金属氧化物纳米核,以及包覆所述金属氧化物纳米核的导电聚合物壳层。A metal oxide nano core, and a conductive polymer shell covering the metal oxide nano core.
  2. 根据权利要求1所述的纳米复合材料,其中,所述纳米复合材料的粒径为10nm~15nm。The nanocomposite material according to claim 1, wherein the particle size of the nanocomposite material is 10nm-15nm.
  3. 根据权利要求1或2所述的纳米复合材料,其中,所述导电聚合物壳层的厚度为3nm~5nm。The nanocomposite material according to claim 1 or 2, wherein the thickness of the conductive polymer shell is 3nm-5nm.
  4. 根据权利要求1至3任一项所述的纳米复合材料,其中,所述金属氧化物纳米核的粒径为7nm~10nm。The nanocomposite material according to any one of claims 1 to 3, wherein the particle diameter of the metal oxide nano-core is 7nm-10nm.
  5. 根据权利要求1至4任一项所述的纳米复合材料,其中,所述导电聚合物为聚1,5-二氨基蒽醌、聚苯胺、聚(1-氨基蒽醌)或聚(2-氨基蒽醌)中的一种或多种。The nanocomposite material according to any one of claims 1 to 4, wherein the conductive polymer is poly 1,5-diaminoanthraquinone, polyaniline, poly(1-aminoanthraquinone) or poly(2- One or more of aminoanthraquinones).
  6. 根据权利要求1至5任一项所述的纳米复合材料,其中,所述金属氧化物选自:ZnO、TiO 2、SnO 2、Ta 2O 3、ZrO 2、NiO、TiLiO、ZnAlO、ZnMgO、ZnSnO、ZnLiO或InSnO中的一种或多种。 The nanocomposite material according to any one of claims 1 to 5, wherein the metal oxide is selected from the group consisting of: ZnO, TiO 2 , SnO 2 , Ta 2 O 3 , ZrO 2 , NiO, TiLiO, ZnAlO, ZnMgO, One or more of ZnSnO, ZnLiO or InSnO.
  7. 根据权利要求1至6任一项所述的纳米复合材料,其中,所述纳米复合材料由金属氧化物纳米核以及包覆所述金属氧化物纳米核的导电聚合物壳层构成。The nanocomposite material according to any one of claims 1 to 6, wherein the nanocomposite material is composed of a metal oxide nanocore and a conductive polymer shell covering the metal oxide nanocore.
  8. 一种纳米复合材料的制备方法,其中,所述方法包括:A method for preparing a nanocomposite, wherein the method comprises:
    提供含有金属氧化物纳米颗粒的溶胶;以及providing a sol comprising metal oxide nanoparticles; and
    在所述含有氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到所述纳米复合材料;adding a conductive polymer monomer and an oxidizing agent to the sol containing oxide nanoparticles, and performing a polymerization reaction to obtain the nanocomposite material;
    其中,所述纳米复合材料包括金属氧化物纳米核以及包覆所述金属氧化物纳米核的导电聚合物壳层。Wherein, the nano-composite material includes a metal oxide nano-core and a conductive polymer shell covering the metal oxide nano-core.
  9. 根据权利要求8所述的方法,其中,所述导电聚合物单体与所述金属氧化物纳米颗粒的摩尔比为(1~5):20;和/或The method according to claim 8, wherein the molar ratio of the conductive polymer monomer to the metal oxide nanoparticles is (1-5):20; and/or
    所述氧化剂与所述导电聚合物单体的摩尔比为(1~2):2;和/或The molar ratio of the oxidizing agent to the conductive polymer monomer is (1-2):2; and/or
    所述氧化剂选自过硫酸铵或双氧水中的一种或多种;和/或The oxidant is selected from one or more of ammonium persulfate or hydrogen peroxide; and/or
    所述导电聚合物单体为1,5-二氨基蒽醌、苯胺、1-氨基蒽醌或2-氨基蒽醌中的一种或多种;和/或The conductive polymer monomer is one or more of 1,5-diaminoanthraquinone, aniline, 1-aminoanthraquinone or 2-aminoanthraquinone; and/or
    所述金属氧化物纳米颗粒溶胶包括所述金属氧化物纳米颗粒、表面活性剂和水,所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。The metal oxide nanoparticle sol includes the metal oxide nanoparticles, a surfactant and water, and the surfactant is selected from one of sodium dodecylsulfonate, sodium laurate or polyethylene glycol or more.
  10. 根据权利要求8或9所述的方法,其中,所述在所述含有金属氧化物纳米颗粒的溶胶中加入导电聚合物单体和氧化剂,进行聚合反应,以得到所述纳米复合材料,包括:The method according to claim 8 or 9, wherein, adding a conductive polymer monomer and an oxidizing agent to the sol containing metal oxide nanoparticles, and carrying out a polymerization reaction, to obtain the nanocomposite material, comprising:
    在所述含有氧化物纳米颗粒的溶胶中加入导电聚合物单体,并超声分散处理,以获得中间混合溶液;adding a conductive polymer monomer to the sol containing oxide nanoparticles, and ultrasonically dispersing to obtain an intermediate mixed solution;
    在所述中间混合溶液中加入所述氧化剂并混合处理,以进行聚合反应,得到所述纳米复合材料。The oxidizing agent is added into the intermediate mixed solution and mixed to carry out a polymerization reaction to obtain the nanocomposite material.
  11. 根据权利要求10所述的方法,其中,所述导电聚合物单体为1,5-二氨基蒽醌,所述混合处理的时间为5h~10h,温度为3℃~10℃;和/或The method according to claim 10, wherein the conductive polymer monomer is 1,5-diaminoanthraquinone, the mixing treatment time is 5h-10h, and the temperature is 3°C-10°C; and/or
    所述超声分散处理的时间为5min~30min。The time for the ultrasonic dispersion treatment is 5 minutes to 30 minutes.
  12. 根据权利要求8至11任一项所述的方法,其中,提供含有金属氧化物纳米颗粒的溶胶的步骤包括:The method according to any one of claims 8 to 11, wherein the step of providing a sol containing metal oxide nanoparticles comprises:
    将沉淀剂的去离子水或乙二醇溶液与盐混合均匀,然后在120℃~180℃下水热反应5h~10h,产物冷却至室温后进行过滤,并分别用水、乙醇洗涤多次,然后再经干燥得到金属氧化物纳米颗粒;Mix the deionized water or ethylene glycol solution of the precipitating agent with the salt evenly, then hydrothermally react at 120°C-180°C for 5h-10h, filter the product after cooling to room temperature, and wash with water and ethanol for several times, and then Obtaining metal oxide nanoparticles through drying;
    将所述金属氧化物纳米颗粒加入到表面活性剂的水溶液中,超声分散5min~30min,形成稳定分散的金属氧化物纳米颗粒溶胶。The metal oxide nanoparticles are added into the aqueous solution of the surfactant, and ultrasonically dispersed for 5 minutes to 30 minutes to form a stably dispersed metal oxide nanoparticle sol.
  13. 根据权利要求12所述的方法,其中,所述沉淀剂与盐的摩尔比为(1~2):6。The method according to claim 12, wherein the molar ratio of the precipitation agent to the salt is (1-2):6.
  14. 根据权利要求12或13所述的方法,其中,所述盐包括锌盐,所述锌盐包括乙酸锌、柠檬酸锌、乳酸锌中的一种或多种;The method according to claim 12 or 13, wherein the salt comprises a zinc salt, and the zinc salt comprises one or more of zinc acetate, zinc citrate, and zinc lactate;
    所述的沉淀剂为尿素、六亚甲基四胺、四甲基氢氧化铵或氢氧化钠中的一种或多种;The precipitant is one or more of urea, hexamethylenetetramine, tetramethylammonium hydroxide or sodium hydroxide;
    所述表面活性剂选自十二烷基磺酸钠、月桂酸钠或聚乙二醇中的一种或多种。The surfactant is selected from one or more of sodium dodecylsulfonate, sodium laurate or polyethylene glycol.
  15. 一种发光器件,其中,包括:A light emitting device, comprising:
    依次层叠设置的阴极、电子传输层、发光层以及阳极;Cathode, electron transport layer, light-emitting layer and anode stacked in sequence;
    其中,所述电子传输层的材料包括权利要求1至7任一项所述的纳米复合材料,或者包括由权利要求8至14任一项所述的方法制成的纳米复合材料。Wherein, the material of the electron transport layer comprises the nanocomposite material according to any one of claims 1 to 7, or comprises the nanocomposite material produced by the method according to any one of claims 8 to 14.
  16. 根据权利要求15所述的发光器件,其中,所述阳极的材料选自铟掺杂氧化锡、氟掺杂氧化锡、锡掺杂氧化锌或铟掺杂氧化锌中的一种或多种;和/或The light emitting device according to claim 15, wherein the material of the anode is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, tin-doped zinc oxide or indium-doped zinc oxide; and / or
    所述发光层的材料包括量子点,所述量子点选自II-VI族化合物、III-V族化合物和I-III-VI族化合物中的一种或多种,所述II-VI族化合物选自CdSe、CdS、CdTe、ZnSe、ZnS、CdTe、ZnTe、CdZnS、CdZnSe、CdZnTe、ZnSeS、ZnSeTe、ZnTeS、CdSeS、CdSeTe、CdTeS;CdZnSeS、CdZnSeTe或CdZnSTe中的一种或多种;所述III-V族化合物选自InP、InAs、GaP、GaAs、GaSb、AlN、AlP、InAsP、InNP、InNSb、GaAlNP或InAlNP中的一种或多种;所述I-III-VI族化合物选自CuInS 2、CuInSe 2或AgInS 2中的一种或多种;和/或 The material of the light-emitting layer includes quantum dots, the quantum dots are selected from one or more of II-VI group compounds, III-V group compounds and I-III-VI group compounds, and the II-VI group compounds One or more selected from CdSe, CdS, CdTe, ZnSe, ZnS, CdTe, ZnTe, CdZnS, CdZnSe, CdZnTe, ZnSeS, ZnSeTe, ZnTeS, CdSeS, CdSeTe, CdTeS; CdZnSeS, CdZnSeTe or CdZnSTe; the III -V group compound is selected from one or more of InP, InAs, GaP, GaAs, GaSb, AlN, AlP, InAsP, InNP, InNSb, GaAlNP or InAlNP; the I-III-VI group compound is selected from CuInS 2 , CuInSe 2 or AgInS 2 or one or more; and/or
    所述阴极的材料选自Al、Cu、Mo、Au、Ag或MoO 3中的一种或多种。 The material of the cathode is selected from one or more of Al, Cu, Mo, Au, Ag or MoO 3 .
  17. 根据权利要求15或16所述的发光器件,其中,所述发光器件还包括空穴传输层和空穴注入层,所述空穴注入层设于所述阳极和所述发光层之间,所述空穴传输层设于所述空穴注入层和所述发光层之间;The light emitting device according to claim 15 or 16, wherein the light emitting device further comprises a hole transport layer and a hole injection layer, and the hole injection layer is arranged between the anode and the light emitting layer, so The hole transport layer is disposed between the hole injection layer and the light emitting layer;
    所述空穴注入层的材料选自PEDOT:PSS、NiO、MoO 3、WO 3或V 2O 5中的一种或多种; The material of the hole injection layer is selected from one or more of PEDOT:PSS, NiO, MoO 3 , WO 3 or V 2 O 5 ;
    所述空穴传输层的材料选自聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)、聚乙烯咔唑、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)、4,4',4”-三(咔唑-9-基)三苯胺、4,4'-二(9-咔唑)联苯、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺中的一种或多种。The material of the hole transport layer is selected from poly(9,9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine), polyvinylcarbazole, poly(N,N'bis( 4-butylphenyl)-N,N'-bis(phenyl)benzidine), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-benzenedi amine), 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4'-bis(9-carbazole)biphenyl, N,N'-diphenyl-N,N '-Bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1 , one or more of 1'-biphenyl-4,4'-diamine.
PCT/CN2022/128627 2022-01-27 2022-10-31 Nanocomplex, method for preparing same, and light-emitting device WO2023142565A1 (en)

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