WO2023083104A1 - 传感器及可穿戴设备 - Google Patents

传感器及可穿戴设备 Download PDF

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Publication number
WO2023083104A1
WO2023083104A1 PCT/CN2022/129792 CN2022129792W WO2023083104A1 WO 2023083104 A1 WO2023083104 A1 WO 2023083104A1 CN 2022129792 W CN2022129792 W CN 2022129792W WO 2023083104 A1 WO2023083104 A1 WO 2023083104A1
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Prior art keywords
diaphragm
sensor
line
sensor according
layer
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PCT/CN2022/129792
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English (en)
French (fr)
Inventor
邱冠勋
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歌尔微电子股份有限公司
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Publication of WO2023083104A1 publication Critical patent/WO2023083104A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/08—Microphones

Definitions

  • the present application relates to the technical field of sensors, in particular to a sensor and a wearable device.
  • the sound sensor transmits the sound signal to the chip through the vibration of the diaphragm (some includes a mass block), and the chip senses the signal and converts it to the circuit board.
  • the acoustic sensor has higher and higher requirements for structural strength performance.
  • the diaphragm of the existing sound sensor When the diaphragm of the existing sound sensor is impacted by atmospheric pressure (such as blowing air), the diaphragm is easily damaged.
  • the application provides a sensor, comprising:
  • the base layer includes a base body and an isolation layer arranged on the base body, the side of the isolation layer facing away from the base body is connected with a sensing component, and the sensing component includes a diaphragm and a back pole;
  • the sensor includes a sound inlet, and the position where the diaphragm faces the sound inlet is formed with a leaking line passing through the diaphragm, and the leaking line is a non-closed structure.
  • the deflated line is a croissant-shaped line
  • the croissant-shaped line includes a protruding end and a first arc segment and a second arc segment respectively arranged on both sides of the protruding end, and the protruding
  • the size of the end gradually decreases from the opening of the raised end to the bottom of the raised end, the end of the first arc segment away from the raised end extends toward the raised end, and the second arc segment is away from the raised end.
  • One end of the raised end extends toward the raised end.
  • first arc segment and the second arc segment are arranged symmetrically with respect to the center line of the raised end.
  • a tangent is made along the outside of the deflated line to form a closed area, and the closed area includes the deflated line and the diaphragm;
  • the length of the connecting line between each diaphragm and the diaphragm outside the enclosed area is A, and the length of any line segment parallel to the connecting line in each diaphragm is B; then A>B.
  • the back pole is arranged on the side of the diaphragm away from the base layer, the back pole includes a body, and a sound hole and a first protrusion are formed on the body, and the first protrusion set on the side of the main body facing the diaphragm.
  • the diaphragm is disposed on the side of the back pole away from the base layer, the diaphragm includes a diaphragm body and a second protrusion formed on the diaphragm body, the second protrusion set on the side of the film body facing the back electrode.
  • the senor further includes a sub-diaphragm, and the sub-diaphragm and the diaphragm are respectively disposed on opposite sides of the back pole.
  • the senor further includes a sub-back pole, and the sub-back pole and the back pole are respectively arranged on opposite sides of the diaphragm.
  • the diaphragm is a composite material, and the composite material includes at least two of semiconductor, conductor and insulating materials.
  • the back plate is a composite layer
  • the composite layer includes at least two of a semiconductor layer, a conductive layer and an insulating layer.
  • the senor is an acoustic sensor or a pressure sensor.
  • the present application further provides a wearable device, where the wearable device includes the above-mentioned sensor.
  • the senor includes a base layer, the base layer includes a base body and an isolation layer arranged on the base body, and the side of the isolation layer facing away from the base body is connected with a sensing component, and the sensing component includes a diaphragm and a back pole; the sensor includes a sound inlet, a diaphragm surface A leaking line that runs through the diaphragm is formed at the position of the sound inlet, and the leaking line is a non-closed structure.
  • the induction component includes a diaphragm and a back pole.
  • the diaphragm By setting a leaking line through the diaphragm, the diaphragm can generate a vent path when it is subjected to blowing pressure or sound waves, reducing the pressure on the diaphragm.
  • This application has the advantage of being able to provide a leak path for sound waves or air pressure and protect the diaphragm from damage.
  • Fig. 1 is the structural representation of the sensor of the embodiment of the present application.
  • Fig. 2 is a schematic structural diagram of the back pole and diaphragm of the embodiment of the present application
  • Fig. 3 is a partial structural schematic diagram of the back pole and diaphragm of the embodiment of the present application.
  • Fig. 4 is another structural schematic diagram of the sensor of the embodiment of the present application.
  • Fig. 5 is a schematic structural diagram of the closed area of the embodiment of the present application.
  • Fig. 6 is a schematic structural diagram of the sound leakage line of the embodiment of the present application.
  • Fig. 7 is the schematic structural diagram of the diaphragm of the embodiment of the present application.
  • FIG. 8 is another structural schematic diagram of the diaphragm of the embodiment of the present application.
  • the present application provides a sensor, comprising:
  • the base layer 1, the base layer 1 includes a base body 11 and an isolation layer 12 disposed on the base body 11, the side of the isolation layer 12 facing away from the base body 11 is connected with a sensing component, and the sensing component includes a diaphragm 3 and a back pole 2;
  • the sensor includes a sound inlet, and the position where the diaphragm 3 faces the sound inlet is formed with a leaking line 4 passing through the diaphragm 3, and the leaking line 4 is a non-closed structure.
  • the induction component includes the diaphragm 3 and the back pole 2.
  • the diaphragm 3 can generate a vent path when subjected to blowing pressure or sound waves, reducing the vibration of the diaphragm. 3 under pressure.
  • This embodiment has the advantage of being able to provide a leaking path for sound waves or air pressure and protect the diaphragm 3 from damage.
  • the air leakage line 4 is a horn-shaped line
  • the horn-shaped line includes a raised end 41 and a first arc segment 42 and a second arc segment 43 respectively arranged on both sides of the raised end 41.
  • the size of the raised end 41 gradually decreases from the opening of the raised end 41 to the bottom of the raised end 41
  • the first arc segment 42 extends away from the end of the raised end 41 toward the raised end 41
  • the second arc segment 43 is away from the raised end
  • One end of the end 41 extends toward the raised end 41 .
  • the first arc segment 42 and the second arc segment 43 are arranged symmetrically with respect to the center line of the protruding end 41 .
  • Setting the cleat-shaped deflation line 4 and making the first arc segment 42 and the second arc segment 43 arranged symmetrically can make the deflation line 4 more regular and facilitate the control of the deflation position.
  • the deflated line 4 can also be a curve of other shapes.
  • a tangent is made along the outside of the deflated line 4 to form a closed area 5, which includes the deflated line 4 and the diaphragm 32;
  • the length of the connecting line between each diaphragm 32 and the diaphragm 3 outside the enclosed area 5 is A, and the length of any line segment parallel to the connecting line in each diaphragm 32 is B; then A>B.
  • the enclosed area 5 may include multiple diaphragms 32, and the comparison of A and B here is for the same diaphragm 32. According to the simulation experiment, it is concluded that when A>B, the diaphragm 32 will not be blown up, can effectively prevent foreign matter from entering, and ensure the deflation effect.
  • the number of diaphragms 32 can be multiple, and the shapes can be different, as long as A>B in each diaphragm 32 is guaranteed.
  • the sensor may be a single-diaphragm single-back electrode sensor, specifically a single diaphragm and an upper back electrode.
  • the back pole 2 is arranged on the side of the diaphragm 3 away from the base layer 1.
  • the back pole 2 includes a body on which a sound hole 21 and a first protrusion 22 are formed.
  • the first protrusion 22 is disposed on the body facing the diaphragm 3. side.
  • the first protrusion 22 of the back pole 2 provides support for the diaphragm 3 to ensure that the air leakage line 4 will not open when blowing air, further preventing the entry of foreign matter.
  • the first protrusion 22 can also be arranged on the vibrating membrane 3 .
  • the sensor may be a single-diaphragm single-back pole sensor, with a single diaphragm and a lower back pole.
  • the vibrating membrane 3 is arranged on the side of the back pole 2 away from the base layer 1, the vibrating membrane 3 includes a membrane body and a second protrusion 31 formed on the membrane body, and the second protrusion 31 is arranged on the membrane body facing the back pole 2 side.
  • the second protrusion 31 on the film body can provide support for the film body after being in contact with the back electrode 2, so as to ensure that the air leakage line 4 will not open when blowing air, and further prevent foreign matter from entering.
  • the second protrusion 31 can also be disposed on the back electrode 2 .
  • the senor may be a dual-diaphragm single-back pole sensor, including a single back pole and two upper and lower diaphragms.
  • the sensor further includes a sub-diaphragm 3 , and the sub-diaphragm 3 and the diaphragm 3 are respectively arranged on opposite sides of the back pole 2 .
  • the senor may be a double-back pole single-diaphragm sensor, including a single diaphragm and upper and lower back poles.
  • the sensor further includes a sub-back pole 2 , and the sub-back pole 2 and the back pole 2 are respectively arranged on opposite sides of the diaphragm 3 .
  • the diaphragm 3 is a composite material, and the composite material includes at least two of semiconductor, conductor and insulating materials.
  • the semiconductor material can be polysilicon
  • the conductor material can be gold, aluminum and copper
  • the material of the insulating layer 25 can be silicon nitride or silicon oxide.
  • the back electrode 2 is a composite layer, and the composite layer includes at least two of the semiconductor layer 23 , the semiconductor layer 23 and the insulating layer 25 .
  • the semiconductor layer 23 can be made of polysilicon, the semiconductor layer 23 can be made of gold, aluminum and copper, and the insulating layer 25 can be supported by silicon nitride or silicon oxide.
  • an isolation layer 12 can be provided on the substrate 11, and the isolation layer 12 can be made of insulating material silicon oxide.
  • the diaphragm 3 is set on the isolation layer 12, and the support layer 24 on the diaphragm 3 is made of silicon dioxide, which plays a role of support and insulation at the same time, and then the semiconductor layer 23 is set on the support layer 24, and on the semiconductor layer 23 An insulating layer 25 is further provided, and at the same time, a conductive layer 26 is provided on the semiconductor layer 23, and the conductive layer 26 may be a metal sheet. Referring to Fig.
  • an isolation layer 12 can be set on the substrate 11, and the isolation layer 12 can be made of insulating material silicon oxide, and then the isolation
  • An insulating layer 25 is set on the layer 12 to support and insulate, a semiconductor layer 23 is arranged in the insulating layer 25, the diaphragm 3 is arranged on the top of the back electrode 2, and one end of the diaphragm 3 is connected to the semiconductor, and the conductive layer 26 is arranged on Diaphragm 3 on.
  • the senor is an acoustic sensor or a pressure sensor.
  • the present application also provides a wearable device, which includes the above sensor. Since the wearable device includes all the technical solutions of all the embodiments of the above-mentioned sensors, it at least has all the beneficial effects brought by all the above-mentioned technical solutions, and will not repeat them here.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

本申请提供一种传感器及可穿戴设备，传感器包括基层，基层包括基体和设置于基体上的隔离层，隔离层背离基体的一侧连接有感应组件，感应组件包括振膜和背极；传感器包括进音口，振膜面对进音口的位置形成有贯穿振膜的泄气线，泄气线为非封闭结构。感应组件包括振膜和背极，通过在振膜上设置贯穿的泄气线，可以使得振膜在遭受吹气压力或者声波时能产生泄气路径，降低振膜承受的压力。

Description

传感器及可穿戴设备
本申请要求于2021年11月15日提交中国专利局、申请号为202111347234.X、发明名称为“传感器及可穿戴设备”的中国专利申请的优先权，其全部内容通过引用结合在申请中。
技术领域
本申请涉及传感器技术领域，尤其涉及一种传感器及可穿戴设备。
 背景技术
声音传感器通过振膜（有些包括质量块）的振动将声音信号传递至芯片，芯片感受到信号转化后传递至电路板。随着人们需求的不断提高，声音传感器对结构强度性能方面的要求越来越高。
 技术问题
现有的声音传感器振膜在受到大气压冲击时（比如吹气），容易造成振膜破损。
 技术解决方案
根据本申请的一方面，本申请提供一种传感器，包括：
基层，所述基层包括基体和设置于所述基体上的隔离层，所述隔离层背离所述基体的一侧连接有感应组件，所述感应组件包括振膜和背极；
所述传感器包括进音口，所述振膜面对所述进音口的位置形成有贯穿所述振膜的泄气线，所述泄气线为非封闭结构。
在一实施例中，所述泄气线为羊角形线，所述羊角形线包括凸起端和分别设置于所述凸起端两侧的第一弧段和第二弧段，所述凸起端的尺寸自所述凸起端的开口向所述凸起端的底部逐渐减小，所述第一弧段远离所述凸起端的一端朝向所述凸起端延伸，所述第二弧段远离所述凸起端的一端朝向所述凸起端延伸。
在一实施例中，所述第一弧段和所述第二弧段相对于所述凸起端的中心线对称设置。
在一实施例中，沿所述泄气线的外侧做切线，形成封闭区域，所述封闭区域包含泄气线和膜片；
每一所述膜片与封闭区域外的振膜的连接线的长度为A，每一所述膜片内任意一条与所述连接线平行的线段的长度为B；则A>B。
在一实施例中，所述背极设置于所述振膜背离所述基层的一侧，所述背极包括本体，所述本体上形成有音孔和第一凸起，所述第一凸起设置于所述本体朝向所述振膜的一侧。
在一实施例中，所述振膜设置于所述背极背离所述基层的一侧，所述振膜包括膜体和形成于所述膜体上的第二凸起，所述第二凸起设置于所述膜体朝向所述背极的一侧。
在一实施例中，所述传感器还包括子振膜，所述子振膜和所述振膜分别设置于所述背极相对的两侧。
在一实施例中，所述传感器还包括子背极，所述子背极和所述背极分别设置于所述振膜相对的两侧。
在一实施例中，所述振膜为复合材料，所述复合材料包括半导体、导体和绝缘材料中的至少两种。
在一实施例中，所述背极板为复合层，所述复合层包括半导体层、导体层和绝缘层中的至少两种。
在一实施例中，所述传感器为声音传感器或压力传感器。
根据本申请的另一方面，本申请还提供一种可穿戴设备，所述可穿戴设备包括上述所述的传感器。
 有益效果
上述方案中，传感器包括基层，基层包括基体和设置于基体上的隔离层，隔离层背离基体的一侧连接有感应组件，感应组件包括振膜和背极；传感器包括进音口，振膜面对进音口的位置形成有贯穿振膜的泄气线，泄气线为非封闭结构。感应组件包括振膜和背极，通过在振膜上设置贯穿的泄气线，可以使得振膜在遭受吹气压力或者声波时能产生泄气路径，降低振膜承受的压力。该申请具有能够为声波或气压提供泄气路径，保护振膜不受损伤的优点。
 附图说明
为了更清楚地说明本申请实施方式或现有技术中的技术方案，下面将对实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请实施例传感器的结构示意图；
图2为本申请实施例背极和振膜的结构示意图；
图3为本申请实施例背极和振膜的部分结构示意图；
图4为本申请实施例传感器的另一结构示意图；
图5为本申请实施例封闭区域的结构示意图；
图6为本申请实施例泄声线的结构示意图；
图7为本申请实施例膜片的结构示意图；
图8为本申请实施例膜片的另一结构示意图。
 本发明的实施方式
下面将结合本申请实施方式中的附图，对本申请实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本申请的一部分实施方式，而不是全部的实施方式。基于本申请中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施方式，都属于本申请保护的范围。
需要说明，本申请实施方式中所有方向性指示（诸如上、下……）仅用于解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本申请中如涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。
并且，本申请各个实施方式之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
参见图1-图8，根据本申请的一个方面，本申请提供一种传感器，包括。
基层1，基层1包括基体11和设置于基体11上的隔离层12，隔离层12背离基体11的一侧连接有感应组件，感应组件包括振膜3和背极2；
传感器包括进音口，振膜3面对进音口的位置形成有贯穿振膜3的泄气线4，泄气线4为非封闭结构。
上述实施例中，感应组件包括振膜3和背极2，通过在振膜3上设置贯穿的泄气线4，可以使得振膜3在遭受吹气压力或者声波时能产生泄气路径，降低振膜3承受的压力。该实施例具有能够为声波或气压提供泄气路径，保护振膜3不受损伤的优点。
需要说明的是，对于泄气线4的具体形状，本申请并不做具体限定，只要满足能够使气压通过即可。参照图6，在一实施例中，泄气线4为羊角形线，羊角形线包括凸起端41和分别设置于凸起端41两侧的第一弧段42和第二弧段43，凸起端41的尺寸自凸起端41的开口向凸起端41的底部逐渐减小，第一弧段42远离凸起端41的一端朝向凸起端41延伸，第二弧段43远离凸起端41的一端朝向凸起端41延伸。第一弧段42和第二弧段43相对于凸起端41的中心线对称设置。设置羊角形泄气线4并且使得第一弧段42和第二弧段43对称设置，可以使得泄气线4更显规则，便于泄气位置的控制。当然，泄气线4还可以是其它形状的曲线。
请参照图5-图8，在一实施例中，沿泄气线4的外侧做切线，形成封闭区域5，封闭区域5包含泄气线4和膜片32；
每一膜片32与封闭区域5外的振膜3的连接线的长度为A，每一膜片32内任意一条与连接线平行的线段的长度为B；则A>B。这里需要说明的是，封闭区域5可能会包括多块膜片32，这里的A与B的比较是针对同一块膜片32而言，根据仿真实验得出结论，当则A>B时膜片32不会被吹起，可以有效防止异物进入，并且确保泄气效果。参照图7和图8，膜片32的数量可以为多片，形状可以各异，只要保证每一膜片32中A>B即可。
参照图1-图3，作为本申请的一具体实施方式，该传感器可以是单振膜单背极传感器，具体为单振膜与上背极。具体地，背极2设置于振膜3背离基层1的一侧，背极2包括本体，本体上形成有音孔21和第一凸起22，第一凸起22设置于本体朝向振膜3的一侧。这里背极2的第一凸起22为振膜3提供支撑，确保吹气时泄气线4不会打开，进一步防止异物进入。当然，本领域技术人员可以理解，也可以将第一凸起22设置于振膜3上。
参照图4，作为本申请的一具体实施方式，该传感器可以是单振膜单背极传感器，具有为单振膜与下背极。具体地，振膜3设置于背极2背离基层1的一侧，振膜3包括膜体和形成于膜体上的第二凸起31，第二凸起31设置于膜体朝向背极2的一侧。这里膜体上的第二凸起31与背极2接触后能为膜体提供支撑，确保吹气时泄气线4不会打开，进一步防止异物进入。当然，本领域技术人员可以理解，也可以将第二凸起31设置于背极2上。
作为本申请的一具体实施方式，该传感器可以是双振膜单背极传感器，包含单背极与上下两个振膜。具体地，传感器还包括子振膜3，子振膜3和振膜3分别设置于背极2相对的两侧。
作为本申请的一具体实施方式，该传感器可以是双背极单振膜传感器，包含单振膜与上下两个背极。具体地，传感器还包括子背极2，子背极2和背极2分别设置于振膜3相对的两侧。
在一实施例中，振膜3为复合材料，复合材料包括半导体、导体和绝缘材料中的至少两种。半导体材料可以采用多晶硅，导体材料可以采用金铝铜，绝缘层25材料可以采用氮化硅或氧化硅。
参照图1-图4，在一实施例中，背极2板为复合层，复合层包括半导体层23、半导体层23和绝缘层25中的至少两种。半导体层23可以采用多晶硅制成，半导体层23可以采用金铝铜制成，绝缘层25可以采用氮化硅或氧化硅支撑。参照图1-图3，当传感器是具有单振膜与上背极的单振膜单背极传感器时，可以在基体11上设置隔离层12，隔离层12可以由绝缘材料氧化硅制成，然后在隔离层12上设置振膜3，在振膜3上支撑层24，由二氧化硅制成，同时起支撑和绝缘作用，然后在支撑层24上设置半导体层23，在半导体层23上再设置绝缘层25，同时，在半导体层23上设置导电层26，导电层26可以是金属片。参照图4，当传感器是具有单振膜与下背极的单振膜单背极传感器时，可以在基体11上设置隔离层12，隔离层12可以由绝缘材料氧化硅制成，然后在隔离层12上设置绝缘层25起支撑和绝缘作用，在绝缘层25内设置有半导体层23，振膜3设置于背极2的顶端，且振膜3有一端与半导体连接，导电层26设置在振膜3上。
在一实施例中，传感器为声音传感器或压力传感器。
根据本申请的另一方面，本申请还提供一种可穿戴设备，可穿戴设备包括上述的传感器。由于可穿戴设备包括了上述所有传感器的全部实施例的所有技术方案，因此，至少具有上述所有技术方案带来的一切有益效果，在此不再一一赘述。
以上仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的技术构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围。

Claims (12)

  1. 一种传感器，其中，所述传感器包括：
    包括基层，所述基层包括基体和设置于所述基体上的隔离层，所述隔离层背离所述基体的一侧连接有感应组件，所述感应组件包括振膜和背极；
    所述传感器包括进音口，所述振膜面对所述进音口的位置形成有贯穿所述振膜的泄气线，所述泄气线为非封闭结构。
  2. 根据权利要求1所述的传感器，其中，所述泄气线为羊角形线，所述羊角形线包括凸起端和分别设置于所述凸起端两侧的第一弧段和第二弧段，所述凸起端的尺寸自所述凸起端的开口向所述凸起端的底部逐渐减小，所述第一弧段远离所述凸起端的一端朝向所述凸起端延伸，所述第二弧段远离所述凸起端的一端朝向所述凸起端延伸。
  3. 根据权利要求2所述的传感器，其中，所述第一弧段和所述第二弧段相对于所述凸起端的中心线对称设置。
  4. 根据权利要求1所述的传感器，其中，沿所述泄气线的外侧做切线，形成封闭区域，所述封闭区域包含泄气线和膜片；
    每一所述膜片与封闭区域外的振膜的连接线的长度为A，每一所述膜片内任意一条与所述连接线平行的线段的长度为B；则A>B。
  5. 根据权利要求1所述的传感器，其中，所述背极设置于所述振膜背离所述基层的一侧，所述背极包括本体，所述本体上形成有音孔和第一凸起，所述第一凸起设置于所述本体朝向所述振膜的一侧。
  6. 根据权利要求1所述的传感器，其中，所述振膜设置于所述背极背离所述基层的一侧，所述振膜包括膜体和形成于所述膜体上的第二凸起，所述第二凸起设置于所述膜体朝向所述背极的一侧。
  7. 根据权利要求1-6中任一项所述的传感器，其中，所述传感器还包括子振膜，所述子振膜和所述振膜分别设置于所述背极相对的两侧。
  8. 根据权利要求1-6中任一项所述的传感器，其中，所述传感器还包括子背极，所述子背极和所述背极分别设置于所述振膜相对的两侧。
  9. 根据权利要求1-6中任一项所述的传感器，其中，所述振膜为复合材料，所述复合材料包括半导体、导体和绝缘材料中的至少两种。
  10. 根据权利要求1-6中任一项所述的传感器，其中，所述背极板为复合层，所述复合层包括半导体层、导体层和绝缘层中的至少两种。
  11. 根据权利要求1-6中任一项所述的传感器，其中，所述传感器为声音传感器或压力传感器。
  12. 一种可穿戴设备，其中，所述可穿戴设备包括如权利要求1-11中任一项所述的传感器。。
PCT/CN2022/129792 2021-11-15 2022-11-04 传感器及可穿戴设备 WO2023083104A1 (zh)

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