WO2023013384A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- WO2023013384A1 WO2023013384A1 PCT/JP2022/027817 JP2022027817W WO2023013384A1 WO 2023013384 A1 WO2023013384 A1 WO 2023013384A1 JP 2022027817 W JP2022027817 W JP 2022027817W WO 2023013384 A1 WO2023013384 A1 WO 2023013384A1
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- Prior art keywords
- dielectric
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- plasma processing
- dielectric plate
- processing apparatus
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- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 11
- 230000006698 induction Effects 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- the present invention relates to a plasma processing apparatus.
- Patent Document 1 discloses a metal plate having slits formed thereon, a dielectric plate supported in contact with the metal plate and closing the slits, and a high-frequency magnetic field provided outside the processing chamber so as to face the metal plate.
- a plasma processing apparatus is disclosed that includes an antenna that produces a .
- the plasma processing apparatus disclosed in Patent Document 1 can efficiently supply a high-frequency magnetic field generated from an antenna to a processing chamber.
- An object of one aspect of the present invention is to facilitate handling of the dielectric plate and reduce the possibility of damage to the dielectric plate due to thermal expansion of the dielectric plate.
- a plasma processing apparatus includes a vacuum vessel that accommodates an object to be processed inside; an antenna that is provided outside the vacuum vessel and generates a high-frequency magnetic field; a magnetic field introduction window provided on a wall surface of the vacuum vessel for introducing the high frequency magnetic field into the interior of the vacuum vessel in order to generate plasma inside the vacuum vessel, wherein the magnetic field introduction windows are provided in a plurality of and a metal plate having a bridging portion formed between the plurality of slits; and a plurality of rectangular dielectric plates arranged side by side so as to cover the plurality of slits.
- the plurality of dielectric plates are arranged such that the sides of the adjacent dielectric plates facing each other are located on the bridging portion.
- FIG. 2 is a plan view of the plasma processing apparatus shown in FIG. 1; 3 is an enlarged view enlarging a portion surrounded by a dotted line DL shown in FIG. 2; FIG. 4 is a cross-sectional view showing the vicinity of sides 51A and 52A of the dielectric plate shown in FIG. 3; FIG. It is a figure which shows the structure of the plasma processing apparatus which concerns on Embodiment 2 of this invention.
- FIG. 1 is a cross-sectional view showing a cross-sectional configuration of a plasma processing apparatus 1 according to Embodiment 1 of the present invention.
- the direction in which the antenna 6 extends is the X-axis direction
- the direction from the vacuum vessel 2 toward the antenna 6 is the Z-axis direction
- the direction orthogonal to both the X-axis direction and the Z-axis direction is the Y-axis direction.
- the X-axis direction, Y-axis direction, and Z-axis direction are directions orthogonal to each other.
- FIG. 2 is a plan view of the plasma processing apparatus 1 shown in FIG. In FIG. 2, the antenna 6 and the high frequency power supply 7 are omitted.
- the plasma processing apparatus 1 performs plasma processing on an object to be processed W1 such as a substrate using an inductively coupled plasma P1.
- the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic EL display, or a flexible substrate for a flexible display.
- the workpiece W1 may be a semiconductor substrate used for various purposes.
- the object W1 to be processed is not limited to a substrate-like form, such as a tool.
- the processing applied to the workpiece W1 is, for example, film formation by plasma CVD (Chemical Vapor Deposition) or sputtering, etching by plasma, ashing, coating film removal, and the like.
- the plasma processing apparatus 1 includes a vacuum vessel 2 , a magnetic field introduction window 3 , an antenna 6 , a high frequency power supply 7 and a holding portion 8 .
- a processing chamber 21 evacuated and into which gas is introduced is formed inside the vacuum container 2 .
- the vacuum vessel 2 is, for example, a metal vessel.
- a wall surface 22 of the vacuum container 2 is formed with an opening 23 penetrating in the thickness direction.
- the vacuum vessel 2 is electrically grounded.
- the magnetic field introduction window 3 has a metal plate 4 and a plurality of dielectric plates 5 .
- the magnetic field introduction window 3 introduces a high frequency magnetic field generated from the antenna 6 into the processing chamber 21 in order to generate plasma in the processing chamber 21 .
- a metal plate 4 and a dielectric plate 5 are arranged in order in the Z-axis direction.
- a plurality of dielectric plates 5 are arranged side by side on the metal plate 4 so as to cover the plurality of slits 41, and the shape of each dielectric plate 5 is rectangular in plan view.
- the plurality of dielectric plates 5 are arranged in the X-axis direction and are not arranged in the Y-axis direction. If a plurality of dielectric plates 5 are arranged in the Y-axis direction, the boundary between the dielectric plates 5 adjacent to each other in the Y-axis direction will be arranged on the slit 41, and the vacuum state of the processing chamber 21 can be maintained. becomes difficult.
- the width WD1 of one dielectric plate 5 along the X-axis direction is equal to the width of one slit 41 along the X-axis direction so that one dielectric plate 5 can cover one or more slits 41. Larger than WD2.
- the width WD1 of the dielectric plate 5 is, for example, 42.5 mm or more and 524.5 mm or less, and the width WD2 of the slit 41 is, for example, 5 mm or more and 30 mm or less.
- the area of one dielectric plate 5 is smaller than the area of the region where the plurality of slits 41 are formed.
- the dielectric plate 5 is provided in contact with the metal plate 4 from the outside of the vacuum vessel 2 and overlaps the metal plate 4 . Further, the dielectric plate 5 is provided on the surface of the metal plate 4 on the antenna 6 side so as to block the plurality of slits 41 from the outside of the vacuum vessel 2 .
- the entire dielectric plate 5 is composed of a dielectric material, and the dielectric plate 5 has a flat plate shape.
- Materials constituting the dielectric plate 5 are ceramics such as alumina, silicon carbide or silicon nitride, inorganic materials such as quartz glass and alkali-free glass, or resin materials such as fluorine resin such as Teflon (registered trademark).
- FIG. 4 is a sectional view showing the vicinity of the sides 51A and 52A of the dielectric plate 5A shown in FIG.
- Reference numeral 101 in FIG. 4 indicates the vicinity of side 51A
- reference numeral 102 in FIG. 4 indicates the vicinity of side 52A.
- a plurality of dielectric plates 5 are placed on the metal plate 4 such that the sides of the adjacent dielectric plates 5 facing each other are located on the bridging portions 42 . placed.
- the sides of the dielectric plate 5 refer to the sides of the rectangular dielectric plate 5 .
- FIG. 3 for example, consider a case where dielectric plates 5B, 5A, and 5C as the dielectric plate 5 are arranged in this order in the X-axis direction.
- the dielectric plate 5A has four sides 51A, 52A, 53A and 54A. Of the four sides, sides 51A and 52A are a pair of short sides of the rectangle, and sides 53A and 54A of the four sides are a pair of long sides of the rectangle. Dielectric plate 5B has a rectangular short side 51B, and dielectric plate 5C has a rectangular short side 52C.
- the sides 52A and 52C of the adjacent dielectric plates 5A and 5C are adjacent to each other so as to face each other, and are located on the bridging section 42. It is supported by the bridging portion 42 .
- a gap SP is formed between the side 52A and the side 52C.
- a gap SP is formed between one short side and the short side of the adjacent dielectric plate 5, and the other short side It touches the short side of the adjacent dielectric plate 5 different from the dielectric plate 5 .
- the sides of the dielectric plates 5 adjacent to each other so as to face each other are the short sides of the dielectric plates 5 .
- two of the four sides of the dielectric plate 5 that face each other are located on the bridge portion 42 .
- the sides 52A and 52C of the adjacent dielectric plates 5A and 5C, which are sides adjacent to each other so as to face each other, are short sides and are located on the bridging portion 42 .
- the gap SP when the gap SP is formed between the mutually opposing short sides of the adjacent dielectric plates 5A and 5C, the gap SP is formed on the bridge portion 42, so that the dielectric plate 5 closes the processing chamber 21. of vacuum can be maintained.
- the dielectric plate 5 since the temperature of the dielectric plate 5 rises with the generation of plasma, the dielectric plate 5 thermally expands more in the longitudinal direction than in the lateral direction. can be substantially reduced.
- the dielectric plate 5 is fixed to the metal plate 4 on the bridging portions 42 only in one short side region of the four sides of the dielectric plate 5 .
- the short-side region indicates a region near the short side of the surface of the dielectric plate 5 on the side of the metal plate 4 .
- only the short side region of the side 51A is fixed to the bridging portion 42 with an adhesive or a jig.
- the areas of the sides of the dielectric plate 5 other than one short side are only supported without being fixed to the metal plate 4 .
- the dielectric plate 5 thermally expands, the stress applied to the dielectric plate 5 in the longitudinal direction can be reduced, and the possibility of the dielectric plate 5 being damaged can be reduced.
- the magnetic field introduction window 3 is also increased in size, so the area in which the plurality of slits 41 are formed is increased. . Therefore, when one dielectric plate 5 is fixed to the metal plate 4, the size of the dielectric plate 5 increases. On the other hand, when a plurality of dielectric plates 5 are arranged on the metal plate 4, the size of the dielectric plates 5 becomes smaller, so the above possibility can be effectively reduced.
- the cost of the dielectric plates 5 can be reduced more when using a plurality of small-sized dielectric plates 5 than when using one large-sized dielectric plate 5 . Since the dielectric plate 5 having a small size is handled, handling of the dielectric plate 5 made of glass, ceramics, or the like, which is easily damaged, becomes easy.
- adjacent dielectric plates 5 are fixed on one bridge portion 42 and the other dielectric plate 5 is supported without being fixed. This is because when a plurality of dielectric plates 5 are arranged on the metal plate 4 , there is a possibility that a positional deviation of the dielectric plates 5 may cause a problem. Therefore, as shown in FIG. 2, adjacent dielectric plates 5 are fixed together on one bridging portion 42, and adjacent dielectric plates 5 are fixed on another bridging portion 42. It is preferable that they are supported without being fixed together. Thereby, the structural reliability of the dielectric plate 5 is improved.
- the antenna 6 has a linear shape, is provided outside the vacuum vessel 2 , and is arranged so as to face the magnetic field introduction window 3 .
- the length of the antenna 6 along the X-axis direction is approximately 2000 mm.
- the antenna 6 is arranged substantially parallel to the surface of the workpiece W1.
- the antenna 6 generates a high frequency magnetic field when high frequency power is applied from the high frequency power supply 7 .
- an induced electric field is generated in the space inside the processing chamber 21, and an inductively coupled plasma P1 is generated in that space.
- the holding unit 8 is a stage that is accommodated in the processing chamber 21 and holds the workpiece W1.
- a high-frequency magnetic field generated from the antenna 6 passes through the plurality of dielectric plates 5 and the plurality of slits 41 and is supplied to the processing chamber 21 .
- the vacuum state of the processing chamber 21 is maintained by the metal plate 4 closing the opening 23 and the plurality of dielectric plates 5 closing the plurality of slits 41 .
- FIG. 5 is a diagram showing the configuration of a plasma processing apparatus 1A according to Embodiment 2 of the present invention.
- the antenna 6 and the high frequency power supply 7 are omitted.
- the plasma processing apparatus 1A differs from the plasma processing apparatus 1 according to the first embodiment in that a buffer material 9 is provided.
- a cushioning material 9 is provided between adjacent sides of the adjacent dielectric plates 5 fixed to the metal plate 4 on specific bridge portions 42 so as to face each other.
- the buffer material 9 is provided between the sides 51A and 51B of the adjacent dielectric plates 5A and 5B.
- the cushioning material 9 is, for example, a resin material such as Teflon (registered trademark).
- a plasma processing apparatus comprises a vacuum vessel containing an object to be processed, an antenna provided outside the vacuum vessel for generating a high-frequency magnetic field, and plasma generated inside the vacuum vessel.
- a magnetic field introduction window provided on a wall surface of the vacuum container for introducing the high-frequency magnetic field into the interior of the vacuum container, wherein the magnetic field introduction window is formed with a plurality of slits, and the plurality of a metal plate having a bridging portion formed between the slits; and a plurality of rectangular dielectric plates arranged side by side so as to cover the plurality of slits, and each of the adjacent dielectric plates. 2, the plurality of dielectric plates are arranged such that adjacent sides facing each other are positioned on the bridging portion.
- a gap may be formed between the sides adjacent to each other so as to face each other.
- a plasma processing apparatus may be configured such that, in aspect 1 or 2 above, the sides adjacent to each other so as to face each other are short sides of the dielectric plate.
- Reference Signs List 1 1A plasma processing apparatus 2 vacuum vessel 3 magnetic field introduction window 4 metal plate 5, 5A, 5B, 5C dielectric plate 6 antenna 9 cushioning material 22 wall surface 41 slit 42 bridging portion P1 plasma SP gap W1 object to be processed
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Abstract
Description
<プラズマ処理装置1の構成>
図1は、本発明の実施形態1に係るプラズマ処理装置1の断面構成を示す断面図である。図1において、アンテナ6が延伸する方向をX軸方向、真空容器2からアンテナ6に向かう方向をZ軸方向、X軸方向及びZ軸方向の両方の方向に直交する方向をY軸方向とする。X軸方向、Y軸方向及びZ軸方向は互いに直交する方向である。図2は、図1に示すプラズマ処理装置1の平面図である。図2では、アンテナ6及び高周波電源7を省略している。
磁場導入窓3は、金属板4及び複数の誘電体板5を有する。磁場導入窓3は、処理室21でプラズマを発生させるために、アンテナ6から生じた高周波磁場を処理室21に導入させる。Z軸方向に向かって、金属板4及び誘電体板5が順に配置される。
図3は、図2に示す点線DLで囲まれた部分を拡大した拡大図であり、図4は、図3に示す誘電体板5Aの辺51A付近及び辺52A付近を示す断面図である。図4の符号101は、辺51A付近を示しており、図4の符号102は、辺52A付近を示している。
本発明の実施形態2について、以下に説明する。なお、説明の便宜上、実施形態1にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を繰り返さない。図5は、本発明の実施形態2に係るプラズマ処理装置1Aの構成を示す図である。図5では、アンテナ6及び高周波電源7を省略している。図5に示すように、プラズマ処理装置1Aは、実施形態1に係るプラズマ処理装置1とは、緩衝材9が設けられている点が異なる。
本発明の態様1に係るプラズマ処理装置は、被処理物を内部に収容する真空容器と、前記真空容器の外部に設けられ、高周波磁場を生じさせるアンテナと、前記真空容器の内部でプラズマを発生させるために、前記高周波磁場を前記真空容器の内部に導入させる、前記真空容器の壁面に設けられた磁場導入窓と、を備え、前記磁場導入窓は、複数のスリットが形成され、前記複数のスリットの間に形成される架橋部を有する金属板と、前記複数のスリットを覆うように並べられて配置される複数の長方形状の誘電体板と、を有し、隣り合う前記誘電体板それぞれの、互いに対向するように隣接する辺が前記架橋部上に位置するように、複数の前記誘電体板が配置される構成である。
2 真空容器
3 磁場導入窓
4 金属板
5、5A、5B、5C 誘電体板
6 アンテナ
9 緩衝材
22 壁面
41 スリット
42 架橋部
P1 プラズマ
SP 隙間
W1 被処理物
Claims (5)
- 被処理物を内部に収容する真空容器と、
前記真空容器の外部に設けられ、高周波磁場を生じさせるアンテナと、
前記真空容器の内部でプラズマを発生させるために、前記高周波磁場を前記真空容器の内部に導入させる、前記真空容器の壁面に設けられた磁場導入窓と、を備え、
前記磁場導入窓は、
複数のスリットが形成され、前記複数のスリットの間に形成される架橋部を有する金属板と、
前記複数のスリットを覆うように並べられて配置される複数の長方形状の誘電体板と、を有し、
隣り合う前記誘電体板それぞれの、互いに対向するように隣接する辺が前記架橋部上に位置するように、複数の前記誘電体板が配置されることを特徴とするプラズマ処理装置。 - 前記互いに対向するように隣接する辺の間には、隙間が形成されることを特徴とする請求項1に記載のプラズマ処理装置。
- 前記互いに対向するように隣接する辺は、それぞれ前記誘電体板の短辺であることを特徴とする請求項1または2に記載のプラズマ処理装置。
- 前記誘電体板は、前記誘電体板の四辺のうちの一の短辺領域のみが前記架橋部上で前記金属板に固定されることを特徴とする請求項3に記載のプラズマ処理装置。
- 特定の前記架橋部上で前記金属板にそれぞれ固定された、隣り合う前記誘電体板それぞれの、互いに対向するように隣接する辺の間には、緩衝材が設けられることを特徴とする請求項4に記載のプラズマ処理装置。
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JP2004289099A (ja) * | 2003-01-30 | 2004-10-14 | Shimadzu Corp | プラズマ処理装置 |
JP2010177065A (ja) * | 2009-01-30 | 2010-08-12 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法 |
JP2013149377A (ja) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2021012861A (ja) * | 2019-07-09 | 2021-02-04 | 日新電機株式会社 | プラズマ処理装置 |
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WO2020246523A1 (ja) * | 2019-06-05 | 2020-12-10 | 日新電機株式会社 | プラズマ処理装置 |
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JP2004289099A (ja) * | 2003-01-30 | 2004-10-14 | Shimadzu Corp | プラズマ処理装置 |
JP2010177065A (ja) * | 2009-01-30 | 2010-08-12 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置、マイクロ波プラズマ処理装置用のスロット板付き誘電体板及びその製造方法 |
JP2013149377A (ja) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | プラズマ処理装置 |
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