WO2022240406A1 - Color tunable nano led with polarized light emission - Google Patents

Color tunable nano led with polarized light emission Download PDF

Info

Publication number
WO2022240406A1
WO2022240406A1 PCT/US2021/032089 US2021032089W WO2022240406A1 WO 2022240406 A1 WO2022240406 A1 WO 2022240406A1 US 2021032089 W US2021032089 W US 2021032089W WO 2022240406 A1 WO2022240406 A1 WO 2022240406A1
Authority
WO
WIPO (PCT)
Prior art keywords
nano
fin
thin film
light
etching
Prior art date
Application number
PCT/US2021/032089
Other languages
French (fr)
Inventor
Xuejun Xie
Original Assignee
Xuejun Xie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xuejun Xie filed Critical Xuejun Xie
Priority to PCT/US2021/032089 priority Critical patent/WO2022240406A1/en
Publication of WO2022240406A1 publication Critical patent/WO2022240406A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • This patent relates to display systems. More specifically, the present invention is a method and apparatus for a full-color display with self-emitting pixel that emits polarized light.
  • Augmented reality glasses require extremely small pixel integrated with transparent optics to project images into the human retina.
  • US 9977248B1 we addressed a solution by integrating self-emitting pixels into glasses lens, and use microlens to project light into human eyes.
  • FIG. 1 is the working principle of the different wavelengths emitted by nano-fin LEDs with different widths.
  • FIG. 2 is schematic of nano-fin LEDs with different fin widths that emit blue, green, and red colors.
  • FIG. 3 is schematic of two different pixel layouts for full-color pixels containing nano-fin LEDs.
  • FIG. 4 is the fabrication method for nano-fin LED.
  • FIG. 5 is the illustration of polarized light emitted from nano-fin LED
  • FIG. 6 is the illustration of different polarization directions for nano-fin LEDs with different orientations.
  • FIG. 7 is the metal grid polarization filter.
  • FIG. 8 is the display made with nano-fin LED
  • FIG. 9 illustrates the combination of metal grid polarization filter with nano-fin LED.
  • LED made with any material can be etched into nano-fins as shown in FIG. 1.
  • the working principle could be as illustrated in FIG. 1. Due to the quantum confinement or current crowding or charge accumulation, the electron inside 101 is further confined in the x- direction. As a result, the electron and hole’s Quasi Fermi level (marked as dashed lines) inside the nano-fin is elevated, which makes the wavelength of LED shorter on narrower fin width. 102 illustrates a wider nano-fin LED. As the fin wider, the Quasi Fermi level difference between electron and hole energy band is smaller, thus emitting photons with lower energy than the LED with thinner fin.
  • FIG. 2 illustrates the integration of red, green, and blue nano-fin LEDs on one substrate.
  • 201 is a piece of LED that emits red light.
  • 101 and 102 are nano-fin LED that emits blue and green light, respectively.
  • FIG. 3 illustrates the layout of a pixel with nano-fin LEDs.
  • 301 is one configuration with nano-fin in x direction which emits light with polarization in y direction.
  • 302 is one configuration with nano-fin in y direction which emits light with polarization in x direction.
  • 303 is the control circuit consisting of transistors and capacitors that are connected to 102 102201 to control the brightness.
  • FIG. 4 illustrates the fabrication process to create nano-fin with width down to nanometer by conventional lithography techniques such as photolithography.
  • the sacrifice pattern 404 is created by the lithography tool.
  • a mask layer 405 is grown on top conformally with the atomic layer deposition or other deposition methods to 6 create a thin layer of material with controlled thickness covering the sacrifice pattern conformally.
  • the thin layer material 405 is anisotropically etched from the top to remove the material facing up and leaving the sidewall.
  • the sacrifice pattern 404 is removed by etching or dissolving.
  • the residual thin layer material 406 will be used as the mask for etching the nano-fin LED.
  • FIG. 5 illustrates the polarized light emission by nano-fin LED. Nano-fin LED can generate polarized light orthogonal to the direction of the fin.
  • FIG. 6 illustrates the direction of polarization with different nano-fin orientations.
  • 601 is a pixel with light polarized in the vertical direction.
  • 602 is a pixel with light polarized in the horizontal direction.
  • the 201 is etched into stipes as 603 with controlled width for red light emission to emit polarized light.
  • FIG. 7 illustrates another method to create polarized light.
  • 701 is any light- emitting material that emits unpolarized light.
  • 701 could also be 301, 302, 601, or 602.
  • 702 is metal nano-fins fabricated with the same lithography technique as in FIG 4 or imprint lithography. Metal nano-fins filter the light with polarization parallel to the metal nano-fin direction.
  • FIG. 8 illustrates the micro display made with pixels as in FIG. 6. Polarized light emission from pixels 801 that could be 601 or 602.
  • FIG. 9 illustrates overlay metal nano-fin array 702 on top of pixel as the 801 in FIG.8 to further filter the light emission from each pixel.
  • “plurality” means two or more. As used herein, a “set” of items may include one or more of such items. As used herein, whether in the written description or the claims, the terms “comprising”, “including”, “carrying”, “having”, “containing”, “involving”, and the like are to be understood to be open-ended, i.e., to mean including but not limited to. Only the transitional phrases “consisting of’ and “consisting essentially of’, respectively, are closed or semi-closed transitional phrases with respect to claims.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

There is disclosed a multi-color light emitting device on with nano-fin light emitting diodes (LEDs) and the fabrication process. The color of said nano-fin LED can be red green and blue depending on the width of the nano-fine. Said nano-fin LED emits polarized light orthogonal to the direction of the nano-fin. Said Multi-color pixel can be formed using nano-fine LEDs on single substrate and combine with control elements to create self-emitting micro display. The light from said nano-fin LED can be further filtered with metal grid to purify the polarization. Said method of fabrication nano-fin LED comprises the steps of: forming sacrifice pattern with certain removable material by lithography, forming thin film on top of the said sacrifice pattern, etching the thin film with anisotropic etching tool, removing the said sacrifice pattern by etching or dissolving, and etching the semiconductor layer to form nano-fins.

Description

1
COLOR TUNABLE NANO LED WITH POLARIZED LIGHT EMISSION
RELATED APPLICATION INFORMATION
[0001] This patent claims priority from the provisional patent applications 62/704,129, field 12 May 2020, titled COLOR TUNABLE NANO LED WITH POLARIZED LIGHT EMISSION, which is incorporated herein by reference.
NOTICE OF COPYRIGHTS AND TRADE DRESS
[0002] A portion of the disclosure of this patent document contains material which is subject to copyright protection. This patent document may show and/or describe matter which is or may become trade dress of the owner. The copyright and trade dress owner has no objection to the facsimile reproduction by anyone of the patent disclosure as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright and trade dress rights whatsoever.
2
BACKGROUND
[0003] Field
[0004] This patent relates to display systems. More specifically, the present invention is a method and apparatus for a full-color display with self-emitting pixel that emits polarized light.
[0005] Description of the Related Art
[0006] Augmented reality glasses require extremely small pixel integrated with transparent optics to project images into the human retina. In our previous patent US 9977248B1, we addressed a solution by integrating self-emitting pixels into glasses lens, and use microlens to project light into human eyes. We addressed a transparent microlens design that only bends light with certain polarization and transparent to orthogonal light in US 62/942,149. In this application, we address the color-tunable nano light emitter that can also emit polarized light.
3
DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is the working principle of the different wavelengths emitted by nano-fin LEDs with different widths.
[0008] FIG. 2 is schematic of nano-fin LEDs with different fin widths that emit blue, green, and red colors.
[0009] FIG. 3 is schematic of two different pixel layouts for full-color pixels containing nano-fin LEDs.
[0010] FIG. 4 is the fabrication method for nano-fin LED.
[0011] FIG. 5 is the illustration of polarized light emitted from nano-fin LED
[0012] FIG. 6 is the illustration of different polarization directions for nano-fin LEDs with different orientations.
[0013] FIG. 7 is the metal grid polarization filter.
[0014] FIG. 8 is the display made with nano-fin LED
[0015] FIG. 9 illustrates the combination of metal grid polarization filter with nano-fin LED.
[0016] Throughout this description, elements appearing in figures are assigned three-digit reference designators, where the most significant digit is the figure number where the element is introduced, and the two least significant digits are specific to the element. An element that 4 is not described in conjunction with a figure may be presumed to have the same characteristics and function as a previously-described element having the same reference designator.
5
DETAILED DESCRIPTION [0017] Description of Apparatus
[0018] LED made with any material can be etched into nano-fins as shown in FIG. 1.
The working principle could be as illustrated in FIG. 1. Due to the quantum confinement or current crowding or charge accumulation, the electron inside 101 is further confined in the x- direction. As a result, the electron and hole’s Quasi Fermi level (marked as dashed lines) inside the nano-fin is elevated, which makes the wavelength of LED shorter on narrower fin width. 102 illustrates a wider nano-fin LED. As the fin wider, the Quasi Fermi level difference between electron and hole energy band is smaller, thus emitting photons with lower energy than the LED with thinner fin.
[0019] FIG. 2 illustrates the integration of red, green, and blue nano-fin LEDs on one substrate. 201 is a piece of LED that emits red light. 101 and 102 are nano-fin LED that emits blue and green light, respectively.
[0020] FIG. 3 illustrates the layout of a pixel with nano-fin LEDs. 301 is one configuration with nano-fin in x direction which emits light with polarization in y direction. 302 is one configuration with nano-fin in y direction which emits light with polarization in x direction. 303 is the control circuit consisting of transistors and capacitors that are connected to 102 102201 to control the brightness.
[0021] FIG. 4 illustrates the fabrication process to create nano-fin with width down to nanometer by conventional lithography techniques such as photolithography. As shown in 401, first, the sacrifice pattern 404 is created by the lithography tool. Then, a mask layer 405 is grown on top conformally with the atomic layer deposition or other deposition methods to 6 create a thin layer of material with controlled thickness covering the sacrifice pattern conformally. After that, the thin layer material 405 is anisotropically etched from the top to remove the material facing up and leaving the sidewall. Then, the sacrifice pattern 404 is removed by etching or dissolving. The residual thin layer material 406 will be used as the mask for etching the nano-fin LED. As shown in 401, by changing the thickness of the thin layer material 405, the width of the nano-fin 101 and 102 can be controlled. 403 illustrated the manufacturing process to make nano-fines with different widths on the same substrate. [0022] FIG. 5 illustrates the polarized light emission by nano-fin LED. Nano-fin LED can generate polarized light orthogonal to the direction of the fin.
[0023] FIG. 6 illustrates the direction of polarization with different nano-fin orientations. 601 is a pixel with light polarized in the vertical direction. 602 is a pixel with light polarized in the horizontal direction. Different from FIG. 3, here the 201 is etched into stipes as 603 with controlled width for red light emission to emit polarized light.
[0024] FIG. 7 illustrates another method to create polarized light. 701 is any light- emitting material that emits unpolarized light. 701 could also be 301, 302, 601, or 602. 702 is metal nano-fins fabricated with the same lithography technique as in FIG 4 or imprint lithography. Metal nano-fins filter the light with polarization parallel to the metal nano-fin direction.
[0025] FIG. 8 illustrates the micro display made with pixels as in FIG. 6. Polarized light emission from pixels 801 that could be 601 or 602.
[0026] FIG. 9 illustrates overlay metal nano-fin array 702 on top of pixel as the 801 in FIG.8 to further filter the light emission from each pixel.
[0027] Closing Comments 7
[0028] Throughout this description, the embodiments and examples shown should be considered as exemplars, rather than limitations on the apparatus and procedures disclosed or claimed. Although many of the examples presented herein involve specific combinations of method acts or system elements, it should be understood that those acts and those elements may be combined in other ways to accomplish the same objectives. With regard to flowcharts, additional and fewer steps may be taken, and the steps as shown may be combined or further refined to achieve the methods described herein. Acts, elements and features discussed only in connection with one embodiment are not intended to be excluded from a similar role in other embodiments.
[0029] As used herein, “plurality” means two or more. As used herein, a “set” of items may include one or more of such items. As used herein, whether in the written description or the claims, the terms “comprising”, “including”, “carrying”, “having”, “containing”, “involving”, and the like are to be understood to be open-ended, i.e., to mean including but not limited to. Only the transitional phrases “consisting of’ and “consisting essentially of’, respectively, are closed or semi-closed transitional phrases with respect to claims. Use of ordinal terms such as “first”, “second”, “third”, etc., in the claims to modify a claim element does not by itself connote any priority, precedence, or order of one claim element over another or the temporal order in which acts of a method are performed, but are used merely as labels to distinguish one claim element having a certain name from another element having a same name (but for use of the ordinal term) to distinguish the claim elements. As used herein, “and/or” means that the listed items are alternatives, but the alternatives also include any combination of the listed items.

Claims

8 CLAIMS It is claimed:
1. A nano-fin light-emitting diode, comprising: a substrate; light-emitting diodes (LEDs) formed on the substrate, each light-emitting diode is a nano-fin; wherein the active regions of the nano-fins are in shape of a rectangle and the active region of the nano-fin have same material composition and same thickness across the different LEDs.
2. The nano-fin LED of claim 1 wherein LEDs with different fin-width emits light with different wavelength.
3. The nano-fin LED of claim 1 wherein the nano-fin LED emits polarized light with polarization of the electric field orthogonal to the long edge of the fin; and
4. A multi-color light-emitting device, comprising: a substrate; two or more subpixels formed on the substrate, each subpixel includes one or more light-emitting diodes (LEDs) and each light-emitting diode is a nano-fin, such that the fin-width of the nano-fin between the two or more subpixels is different and the fin-width of nano-fin within a given subpixel is the same; 9 wherein the active region of the nano-fin are in shape of a rectangle and the active region of the nano-fin have same material composition and same thickness across the two or more subpixels; and a controller independently coupled to the light emitting diodes in each of the two or more subpixels and configured to supply driving signals to the light emitting diodes in each of the two or more subpixels, where the driving signals are pulse width modulated or current modulated.
5. The multi-color device of claim 4 wherein the nano-fin LED emits polarized light with polarization of the electric field orthogonal to the long edge of the fin; and
6. The multi-color device of claim 4 wherein the nano-fin can align in x direction or y direction, where x direction aligned nano-fin emits polarized light with electric field polarized in y direction, y direction aligned nano-fin emits polarized light with electric field polarized in x direction.
7. The multi-color device of claim 4 wherein the two or more subpixels are defined as a red subpixel that emits red light, a blue subpixel that emits blue light and a green subpixel that emits green light.
8. The multi-color device of claim 4 wherein controller is configured to control the brightness of the nano-fin LED. 10
9. The multi-color device of claim 4 wherein metal grids are overlayed on top of the subpixel with the grid parallel to the fin to further purify the polarization.
10. A multi-color micro display comprising the multi-color light emitting devices as of claim 4.
11. A method of fabrication of nano-fin LED on a substrate composing a layer of p-type semiconductor, on top of multiple quantum wells, on top of n-type semiconductor, said method comprising the steps of: forming sacrifice pattern with certain removable material by lithography; forming thin film on top of the said sacrifice pattern; etching the thin film with anisotropic etching tool to remove the thin film perpendicular to the substrate leaving the side wall of the thin film on sacrifice pattern; removing the said sacrifice pattern by etching or dissolving without removing the said side wall of thin film; etching the semiconductor layer to form nano-fins
12. The method of claim 11 wherein the process is repeated on same substrate to create nano-fin with different width, said method comprising the steps of: forming first sacrifice pattern with certain removable material by lithography; forming thin film on top of the said sacrifice pattern; 11 etching the thin film with anisotropic etching tool to remove the thin film perpendicular to the substrate leaving the side wall of the thin film on sacrifice pattern; removing the said sacrifice pattern by etching or dissolving without removing the said side wall of thin film; forming second sacrifice pattern with certain removable material by lithography; forming thin film on top of the said sacrifice pattern; etching the thin film with anisotropic etching tool to remove the thin film perpendicular to the substrate leaving the side wall of the thin film on the second sacrifice pattern; removing the said sacrifice pattern by etching or dissolving without removing the said side wall of thin film; etching the semiconductor layer to form nano-fins with different widths on a same substrate.
PCT/US2021/032089 2021-05-12 2021-05-12 Color tunable nano led with polarized light emission WO2022240406A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2021/032089 WO2022240406A1 (en) 2021-05-12 2021-05-12 Color tunable nano led with polarized light emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2021/032089 WO2022240406A1 (en) 2021-05-12 2021-05-12 Color tunable nano led with polarized light emission

Publications (1)

Publication Number Publication Date
WO2022240406A1 true WO2022240406A1 (en) 2022-11-17

Family

ID=84027761

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2021/032089 WO2022240406A1 (en) 2021-05-12 2021-05-12 Color tunable nano led with polarized light emission

Country Status (1)

Country Link
WO (1) WO2022240406A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023180243A1 (en) * 2022-03-21 2023-09-28 Ams-Osram International Gmbh Optoelectronic component and method for producing an optoelectronic component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100127238A1 (en) * 2008-11-27 2010-05-27 Samsung Electronics Co., Ltd. Light emitting diode
US20160163918A1 (en) * 2013-09-27 2016-06-09 Intel Corporation Forming led structures on silicon fins
US20190058087A1 (en) * 2017-08-18 2019-02-21 Globalfoundries Inc. Light emitting diodes
US20190245113A1 (en) * 2018-02-02 2019-08-08 Academia Sinica Polarization-selecting nano light-emitting diodes
US20200127159A1 (en) * 2018-05-01 2020-04-23 Facebook Technologies, Llc Micron-sized light emiting diode designs

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100127238A1 (en) * 2008-11-27 2010-05-27 Samsung Electronics Co., Ltd. Light emitting diode
US20160163918A1 (en) * 2013-09-27 2016-06-09 Intel Corporation Forming led structures on silicon fins
US20190058087A1 (en) * 2017-08-18 2019-02-21 Globalfoundries Inc. Light emitting diodes
US20190245113A1 (en) * 2018-02-02 2019-08-08 Academia Sinica Polarization-selecting nano light-emitting diodes
US20200127159A1 (en) * 2018-05-01 2020-04-23 Facebook Technologies, Llc Micron-sized light emiting diode designs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023180243A1 (en) * 2022-03-21 2023-09-28 Ams-Osram International Gmbh Optoelectronic component and method for producing an optoelectronic component

Similar Documents

Publication Publication Date Title
US11888093B2 (en) Display with color conversion layer and isolation walls
KR102413460B1 (en) Semiconducting pixel, matrix of such pixels, semiconducting structure for the production of such pixels and their methods of fabrication
US20240290820A1 (en) Light-emitting diode unit for display comprising plurality of pixels and display device having same
JP2019516251A (en) Monolithic multicolor direct view display comprising LEDs of different colors and method of manufacturing the same
JP6827504B2 (en) Electroluminescent display device
JP7278421B2 (en) In-situ curing of the color conversion layer in recesses
US10708995B2 (en) Color mixing monolithically integrated light-emitting diode pixels
CN107195654B (en) Full-color semiconductor light-emitting micro-display and manufacturing process thereof
JP2010251360A (en) Method of manufacturing display and display
KR20130137985A (en) Display device using semiconductor light emitting device
US10879217B1 (en) Multi-color LED pixel unit and micro-LED display panel
US20200373279A1 (en) Color Conversion Layers for Light-Emitting Devices
JP2022531972A (en) Improved Organic Light Emitting Diode (OLED) displays, devices, systems, and methods
US11362133B2 (en) Multi-color LED pixel unit and micro-LED display panel
TWI803827B (en) High resolution monolithic rgb arrays
WO2022240406A1 (en) Color tunable nano led with polarized light emission
US11114419B2 (en) Multi-color LED pixel unit and micro-LED display panel
CN115735279A (en) Full-color LED display using Micro-Nano PIN LED element and manufacturing method thereof
US20220392952A1 (en) Multi-color led pixel unit and micro-led display panel
US11476390B2 (en) III-V light emitting device with pixels enabling lower cost through-layer vias
KR20230092671A (en) Micro LED display apparatus and method for manufacturing the same
US20240234396A1 (en) Color-tunable led elements and display systems and methods thereof
KR20050063254A (en) Display using light emitting diode doped with phosphor and method of manufacturing the same
US20230197693A1 (en) Micro led display apparatus and method of manufacturing the same
US20220375987A1 (en) Multi-color led pixel unit and micro-led display panel

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21942100

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21942100

Country of ref document: EP

Kind code of ref document: A1