WO2022212561A1 - Integration of boron arsenide into power devices and semiconductors for thermal management - Google Patents
Integration of boron arsenide into power devices and semiconductors for thermal management Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Definitions
- the present embodiments relate generally to electronics, and more particularly to integration of boron arsenide (BAs) and boron phosphide (BP) into semiconductors, electronics, and any power devices for high-performance thermal management.
- BAs boron arsenide
- BP boron phosphide
- WBG Wide band gap
- RF radio frequency
- UWBG Ultra Wide BandGap
- the present disclosure relates to the development of semiconductors, WBG and UWBG device structures (e.g., novel heterostructures), and engineering/fabricating WBG and UWBG electronics and RF (microwave/millimeter wave) devices.
- WBG and UWBG device structures e.g., novel heterostructures
- RF microwave/millimeter wave
- Technology advances include material synthesis (epitaxial growth, growth techniques and characterization, materials/defect engineering), physics-based device design, contact engineering, wafer bonding, device layer structures, interconnections, 3D architectures, surface and interface engineering, integral thermal management, high temperature operation, robustness, heterogeneous integration with other devices/materials systems, and other functionality/domains of WBG and UWBG material s/structures, including electronics, optoelectronics, optical, quantum, acoustic, mechanical, multi-ferroic, and others.
- FIG. 1 is a schematic illustrating example heat dissipation and thermal boundary resistance (TBR) at the interfaces in microchip packaging.
- TBR thermal boundary resistance
- FIG. 1 is a schematic of one example time-domain thermoreflectance
- Figure 2b illustrates aspects of BAs and BP as cooling substrate for metal films; in particular, Figure 2b illustrates a cross-section SEM image of an example sample in which a top layer is aluminum film and the bottom layer is BAs.
- Figure 2c is a graph illustrating typical TDTR experimental data versus time
- Figures 2d and 2e are graphs illustrating example experimental results for the temperature-dependent thermal boundary conductance between varied metals with BAs and BP, respectively.
- Figure 3a is a schematic illustrating an example of phonon transport with mode specific transmission (t) and reflection probability (r) at the interface.
- Figure 3b is a graph illustrating example phonon dispersion relationships
- Figure 3c is a graph illustrating example experimentally measured thermal boundary conductance (dots) of aluminum-HTC interfaces in comparison to calculations (lines), considering temperature dependence and different modeling methods.
- Figure 4a are example cross-section SEM (left) and high-resolution TEM
- Figure 4b is a graph illustrating results of example simulations of the hot spot temperatures for the two best thermal conductors (BAs and diamond), as a function of heating sizes from 100 pm to 100 nm.
- Inset schematics of transport physics and the simulation domain, including a 0.8 pm thick GaN layer on the top of a 100 pm thick cooling substrate. All simulations inputs are from experimental measurements and ab initio calculations.
- FIGS. 4c and 4d illustrate example aspects of experimental measurements of the hot spot temperature rise in operating AlGaN/GaN HEMTs as a function of transistor power densities, with different cooling substrates: BAs, diamond, and SiC. All devices shared the same geometry: two fingers, 100 pm-wide and 34 pm gate pitch.
- Figure 4c is an example SEM image of the fabricated HEMT device. Scale bar, 20 pm.
- Figure 4d is a graph illustrating the GaN temperature as measured using
- Embodiments described as being implemented in software should not be limited thereto, but can include embodiments implemented in hardware, or combinations of software and hardware, and vice-versa, as will be apparent to those skilled in the art, unless otherwise specified herein.
- an embodiment showing a singular component should not be considered limiting; rather, the present disclosure is intended to encompass other embodiments including a plurality of the same component, and vice-versa, unless explicitly stated otherwise herein.
- the present embodiments encompass present and future known equivalents to the known components referred to herein by way of illustration.
- thermal management has been a serious technology hurdle in semiconductor industry for decades.
- most modern electronic systems ranging from laptops, smart phones, data servers, to electric vehicles and radar communications, enormous waste heat dissipates from the hot spot to heat sink across a series of thermal resistance of device layers and their interfaces.
- the device operation characteristics and energy efficiency can be strongly degraded by a large thermal resistance and a rising hot spot temperature.
- Recent research focuses on improving heat dissipation by using high thermal conductivity (HTC) substrates to replace lower conductivity materials (silicon carbide, silicon, and sapphire) to reduce the overall spreading thermal resistance.
- HTC high thermal conductivity
- the key challenge for high-performance thermal management is to achieve the combination of a HTC and a low thermal boundary resistance (TBR) near electronics junction interfaces.
- TBR thermal boundary resistance
- copper, SiC, and diamond are the best developed prototype HTC material for high performance power cooling; importantly it has been integrated with wide-bandgap semiconductors and shown lower hot spot temperatures in GaN-diamond devices than traditional RF systems.
- a poor thermal conductance was found at the GaN- diamond or GaN-SiC interfaces and severely compromised the application promise of diamond or SiC for thermal management.
- Other classical HTC materials have so far been limited by thermal properties and intrinsic issues. Cubic boron nitride suffers synthesis challenge that usually requires high temperature and high pressure, slow growth rate, high cost, and difficulty in integration with semiconductors.
- Nanomaterials such as graphene and nanotubes can be highly conducting for individual materials, but have degraded thermal conductivity when integrated into practical sizes due to ambient interactions and disorder scattering.
- the present Applicant reports the integration and interface characterizations of these new HTC semiconductors with prototype metal and semiconductor materials. As verified through ultrafast spectroscopy experiment and atomistic phonon theory, BAs and BP enable an unprecedented combination of a HTC and a low TBR due to their unique phonon band structures.
- the present Applicant demonstrated the first GaN-on-Bas structure using metamorphic heteroepitaxy growth for passive cooling of RF systems, and measured its high thermal boundary conductance of 250 MW/m 2 K, over 8 times that of diamond.
- FIGs la to 1c illustrate aspects of thermal management using integrated high thermal conductivity (HTC) materials (BAs and BP) as cooling substrate to improve heat dissipation.
- HTC high thermal conductivity
- thermal boundary resistance measures an interface's resistance to thermal flow and is limited by the scattering of energy carriers from both sides of the interface.
- TBR thermal boundary resistance
- the ultimate limit of TBR is usually dominated by the mismatch across the interface of atomistic vibrations, the quantum mechanical modes of which are defined as phonons.
- Figure lc shows the comparison of ⁇ D for typical semiconductors, metals, and HTC materials. Based on this comparison, the present Applicant recognizes that most semiconductors (Si, Ge, GaAs, GaN) and metals (Al, Au, Ni, Pd, Pt, Ti) usually have a low ⁇ D (e.g., below 700 K). However, the traditional prototype HTC materials, i.e. diamond and cubic BN, as a result of their large phonon group velocity, have a much higher ⁇ D (over 2000 K). Indeed, despite the advantageous HTC of diamond or BN, literature studies have verified a large TBR for their interfaces after integration, which significantly compromises their application promise for thermal management.
- the interface between diamond and GaN has a mismatch in ⁇ D over 1500 K, leading to TBR usually of - 30 m 2 K/GW.
- the ⁇ D of BAS and BP is much lower; for example, BAs has a ⁇ D of - 700 K, which is roughly the same as semiconductors such as Si and GaN. Meanwhile, their HTC is comparable to diamond.
- Figures 2a to 2e illustrate example aspects of metal-HTC interfaces and ultrafast optical spectroscopy measurements of temperature-dependent thermal boundary conductance according to embodiments.
- TDTR time domain thermoreflectance
- Figure 2a The thermal transport was measured using ultrafast pump-probe spectroscopy based on the time domain thermoreflectance (TDTR) technique, illustrated in Figure 2a.
- TDTR is well suited for the study as no physical contact is required with the sample and the measurement can precisely determine the TBR.
- a femtosecond pulse laser with 80 MHz repetition rate is generated by a Ti: Sapphire optical cavity 202 and divided into pump 204 and probe 206 beams.
- the pump beam 204 doubles its frequency (i.e., at the wavelength of 400 nm) after passing through a second harmonic generator 208, and is used to thermally excite the sample surface.
- the probe beam at the wavelength of 800 nm, is used to detect the sample temperature using photodiode 210.
- the time delay between pump and probe beams is precisely controlled by a mechanical delay stage 212 with a sub-picosecond resolution.
- the transient TDTR signal is detected and fitted to a multilayer thermal model (Figure 2c). More details regarding TDTR and TBR measurements can be found in, for example, Kang, J. S. et al., “Experimental observation of high thermal conductivity in boron arsenide,” Science 578, 575-578 (2016); Li, M. et al., “Anisotropic Thermal Boundary Resistance across 2D Black Phosphorus: Experiment and Atomistic Modeling of Interfacial Energy,” Transport. Adv. Mater. 31, 1901021 (2019); Li, M.
- Figures 3a to 3c illustrate example aspects of ab initio calculation of phonon band structures and atomistic modelling of phonon spectral contribution to the thermal boundary conductance according to embodiments.
- TBR can be understood as resulting from the breakdown of coherence of the mode-dependent phonon transport across the interfaces.
- partial transmission i.e., partial reflection back
- the dispersion relationship is usually approximated by a linear dispersion relationship (i.e., the Debye approximation).
- the Debye approximation oversimplifies the TBR calculation using a single phonon group velocity along each direction.
- ab initio calculations were performed based on density functional theory (DFT) to obtain the full phonon band structures of the different materials as shown in Figure 3b and construct the phonon-mode-dependent modeling of the interfacial thermal transport.
- the second-order interatomic force constants were calculated using the finite displacement method.
- the projector augmented wave pseudopotential with the local density approximation was used.
- a supercell with a 3x3x 3 cubic unit cell with periodic condition was constructed for DFT calculations using Quantum Espresso package.
- a 12x 12x 12 Monkhorst-Pack mesh was used for the reciprocal space and the kinetic-energy cut-off for the plane-wave basis set was 600 eV.
- the PDOS is mainly distributed between 0 and 10 THz for most metals.
- the cutoff acoustic frequencies are 32.0 THz in diamond, 16.1 THz in BP, 9.6 THz in BAs, 9.5 THz in Al, 6.1 THz in Pt, and 4.9 THz in Au.
- These PDOS spectra show that BAs overlaps best with most metals, followed by BP, and with diamond as the worst option.
- the comparison of PDOS further explains the improved TBR with BAs/BP versus diamond, as well as the variation between different metals, which is consistent with the experimental results shown in Figures 2d and 2e.
- the phonon transport is similar to radiation heat transfer between blackbodies, so that all the emitted phonons from the one side of the interface would be accepted by the absorption side once the state of phonons are allowed into the absorption side.
- the transmission coefficient would be unitary, i.e., ( ⁇ 12(ki))
- the maximum G values based on the Radiation limit, plotted as dotted lines in Figure 3c, are 953 MW/m 2 K for an Al-BAs interface, 652 MW/m 2 K for an Al-BP interface, and 232 MW/m 2 K for an Al-diamond interface. As expected, the experimental results for the different interfaces follow the order predicted by the Radiation limit, but the experimental values are far below this maximum limit, as a full transmission cannot be achieved for practical interfaces.
- the transmission coefficient can be calculated as: where ⁇ , ⁇ (k, i ) is the Kronecker delta function. Note that the ab initio derived full phonon band structure from DFT calculations were used for the calculation and the results for the interfaces between A1 and BAs, BP and diamond are plotted as dashed lines in Figure 3c.
- the supercell size is 10x10x80 (Al) and 11x11x80 (diamond) for A1-diamond interface, 14x14x80 (A1) and 12x12x80 (BP) for Al-BP interface, 13x13x80 (Al) and 11 x 11 x80 (BAs) for Al-BAs interface.
- the whole systems were relaxed under isothermal-isobaric ensemble at desired temperature and pressure for 5 ns, followed with relaxation under canonical ensemble for 3 ns and microcanonical ensemble for 2 ns with a time step of 0.5 fs.
- the MD simulations were performed with Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS).
- the steady-state temperature profile across the system under a constant heat flux can be obtained after 10 ns.
- the TBR values are determined from the heat flux and temperature drop at interface.
- the MD predicted TBRs for the interface with BAs, BP, and diamond are plotted in comparison with experimental results in Figure 3c.
- the MD predictions are in close to the experimental measurements; the good agreement by the MD predictions indicate that a more realistic interatomic interaction can better describe the phonons behaviors at interface, including the elastic phonon scattering, high-order anharmonicity and phonon mode conversion that such atomistic interactions dictate the macroscopic TBRs.
- BAs decomposes at about 1200 K, so low temperature crystal growth is required.
- the present Applicant applied metamorphic heteroepitaxy method to relax the strain: A thin layer of oxide was introduced as the adhesion layer in between, using atomic layer deposition technique. A follow-up treatment using oxygen plasma was used to activate interface bonds and the sample was annealed at 773K for 24 hours in vacuum. The heterogeneous interface was carefully verified by SEM and high-resolution transmission electron microscopy (HR- TEM): Figure 4a shows an atomically clean and uniform GaN-BAs interface with a 2 nm interlayer aluminum oxide.
- the thermal boundary conductance of the high quality BAs- GaN interface was measured using TDTR to be ⁇ 250 MW/m 2 K - Note that this conductance value is already over 8 times higher than that of the typical GaN-diamond interfaces.
- the oxide layer could serve as a barrier to scatter phonons and introduce an additional series resistance (e.g., - 1.4 m 2 K/GW for 2 nm oxide, or 35% of the measured total resistance)
- the TBR of GaN-BAs interface could be subject to further enhancement through the optimization of the resistance contribution from the oxide interlayer.
- the hot spot temperature was determined across a GaN-BAs interface as a function of various heating sizes from 100 pm to 100 nm.
- the heat dissipation performance of GaN-BAs device was compared with that of the current state-of-the-art GaN-diamond device, verifying the record-high performance.
- Considered was an exemplary device geometry involving GaN device layer on the top of BAs or diamond cooling substrate by using experimental data as the input and solving the heat conduction equation and the Boltzmann transport equation (BTE) (inset, Figure 4b).
- a boundary line heat source with a fixed power (e.g., 10 W/mm) was placed on top of the GaN layer to serve as the hot spot, and the bottom of the substrate was fixed at room temperature.
- a fixed power e.g. 10 W/mm
- the width of the heat source was varied.
- Experimental data of TBR and thermal conductivity were used for these simulations.
- First simulated was a hot spot temperature by solving the heat conduction equation using the finite element method.
- thermal transport is considered as a diffusive process, where the heat flux is proportional to the temperature gradient following the Fourier’s heat conduction law.
- the classical diffusion theory describes the thermal transport process well when the characteristic length is far larger than the phonon mean free path, and is commonly used for engineering macroscopic devices.
- Figure 4b shows the hot spot temperature calculated with the heat conduction equation.
- the hot spot temperature increases when the heater width decreases, due to the larger heating power density.
- TBR thermal conductivity
- BAs clearly has a reduced hot spot temperature than diamond, supporting its superior performance in heat dissipation through the combination of a HTC and low TBR.
- n(w , p) and t(w, p) are respectively the phonon group velocity and the phonon relaxation time at a certain angular frequency w and polarization p .
- nt is the phonon mean free path.
- VRMC variance-reduced Monte Carlo
- the frequencies of the phonon bundles are redistributed based on the spectral distribution of the specific heat.
- we calculate the temperature response to a heat pulse and integrate the response from t 0 to infinity. All the material’s spectral properties for the input into the BTE simulation come from ab initio calculations and experiments.
- Figures 4a to 4d illustrate example aspects of device interface integration of
- Figure 4b shows the hot spot temperature as a function of the scaling heating sizes (solid line).
- the hot spot temperature increases dramatically due to the increased packing density.
- the ballistic heat transfer becomes substantial for heat spots of small sizes, so that Fourier’s law result deviates significantly from the BTE calculation, i.e., representing the practical heating behavior.
- the heating width is large, the result of Fourier’s law is consistent with the BTE.
- heating source width is smaller than 1 pm, the hot spot temperature by the BTE is much higher compared with Fourier’s law, and such difference between the BTE and Fourier’s law increases dramatically with the width decrease of the heating source.
- the ballistic transport takes place when the heated spot size is smaller than the mean free paths, and here it occurs for a heating source width on the order of ⁇ 1 pm, which is consistent with our previous study of phonon mean free paths.
- the hot spot temperatures are compared between the GaN-BAs device and the state-of-the-art GaN- diamond device ( Figure 4b). It clearly shows that for the whole range of scaling lengths, BAs is inherently superior to diamond for heat dissipation. For example, with a 1 pm heating width, the hot spot temperature for BAs is 38% lower than that of diamond, the current best reported in literature for high power cooling.
- the present Applicant reports for the first time the heterogeneous integration of the emerging HTC materials for high-performance thermal management.
- This ultrafast spectroscopy measurement and atomistic theory calculation demonstrated that interface thermal transport is significantly improved with BAs and BP in comparison to the state of the arts.
- Replacing diamond with BAs developed was the first BAs-GaN structure using metamorphic heteroepitaxy growth and measured its thermal boundary conductance to be over 8 times improvement than a typical diamond-GaN interface.
- ab initio and atomistic calculations the intrinsic enhancement in heat dissipation is verified due to the phonon band structures, under varied conditions including Radiation limit, diffuse scattering calculation, and ab-initio MD simulations.
- High thermal conductivity substrates and metal films were synthesized by epitaxial growth and flux growth methods respectively, as descripted in previous reports (e.g. Kang, J. S. et al., “Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications,” Nano Lett. 17, 7507-7514 (2017); and Kang, J. S. et al., “Experimental observation of high thermal conductivity in boron arsenide,” Science 578, 575-578 (2018)).
- Different metal films Al, Au, Ni, Pd, Pt, and Ti, Kurt J.
- BAs and GaN samples were mechanically transferred and bonded together through the oxide layers.
- the bonded BAs-GaN samples were annealed at 773 K in vacuum to form the high-quality interfaces for measurements.
- the integrated samples were measured with thermal cycling between room temperature and 600 K for over ten times; all the samples were measured with consistent results and no appreciable degradation.
- GaN-BAs devices and AlGaN/GaN-BAs HEMT devices GaN-on-Si wafer consisting of a ⁇ 1 ⁇ m-thick AlGaN transition layer, 1 ⁇ m-thick GaN buffer layer, and 20 nm AlGaN top barrier layer, was used as the device layer.
- the HEMT devices with two fingers, 100 ⁇ m-wide and 34 ⁇ m gate pitch were fabricated using e-beam lithography (JSM- 6610, JEOL). Rapid Thermal Annealing (RTA, RTP 600xp, Modular Process Technology) at 973K for 30 s under forming gas (98% argon and 2% hydrogen) was used to form ohmic contact.
- RTA Rapid Thermal Annealing
- the HEMT epitaxial layers, device layout, I-V characteristics and operation conditions for GaN-BAs are consistent with the reported GaN-diamond and GaNSiC devices, with the understanding that this is an evolving technology. Example details regarding transistor fabrication and I-V transport characterizations that can be used in the present embodiments have been described by the present Applicant and others in Ke, M.
- BAs and GaN heterostructures were prepared by using a focused ion beam (FIB) machine (Nova 600, FEI).
- FIB focused ion beam
- the sample was cut by FIB into small pieces: 5 ⁇ m x 5 ⁇ m x 2 ⁇ m (width x height x thickness), and transferred to a TEM sample holder (PELCO FIB Lift-Out, Ted Pella) with a nanomanipulator.
- the heterostructure sample was further milled by FIB until the sample thickness was thin enough ( ⁇ 100 nm) to be traversed by the electron beam for effective TEM imaging.
- the sample was transferred to an aberration-corrected scanning TEM (Grand ARM, JEOL) for imaging. Annular bright field images were taken under 300 keV acceleration voltage.
- the measured data and atomic-resolution TEM images were processed with the Gatan TEM software.
- Raman spectroscopy (inVia, Renishaw) under 488nm laser excitation with 2400/mm grating.
- the laser was polarized and backscattered with Leica DM2500 optical system.
- Leica DM2500 optical system We used 50 x /0.75 numerical aperture objective lens and measured lateral spatial resolution was 0.5 ⁇ m.
- calibrations on temperature, thermoelastic stress, and electrical field in GaN HEMTs were carefully performed to determine the accurate temperatures via Raman measurements.
- the present Applicant successfully developed a practical integration and atomic structural characterization of GaN-on- BAs structure for passive cooling of RF transistors, and measured a high thermal boundary conductance of 250 MW/m 2 K. Furthermore, comparison of the device-level hot spot temperatures of GaN transistors with length-dependent scaling from 100 ⁇ m to 100 nm in both diffusive and ballistic transport regimes, shows that the power cooling performance of BAs intrinsically exceeds that of diamond devices and the state of the arts. Importantly, experimental measurement of operating AlGaN/GaN HEMT devices confirms the substantially reduced hot spot temperature and clear advantage for using BAs versus diamond or silicon carbide as cooling substrate. This study represents a significant progress towards device integration of emerging high thermal conductivity semiconductors for advanced thermal management and establishes a benchmark performance to extend the roadmap for high power electronics. [0060] Since the integration and device performance of the BAs-WBG, BAs-
- UWBG, BP-WBG, BP-UWBG were realized by the present Applicant for the first time, the present embodiments encompass the following broad applications: (1) All the device application through integration or inclusion of boron arsenide and boron phosphide with metals, semiconductors (Si, Ge, InP, InAs, GaAs), WBG (GaN, A1GaN, SiC) and UWBG materials (AIN, cBN, diamond, Ga2 ⁇ 3); (2) All the materials preparation, materials processing and integrations of boron arsenide and boron phosphide, including in the forms of its crystal, polycrystal, amorphous, or mixed with other materials and etc., and (3) all applications as a new materials or device platforms for all applications in electronics, RF technologies, photonics, optoelectronics, sensors, detectors, acoustics, etc.
- RF technologies The present disclosure enables the development of semiconductor, WBG and UWBG device structures (e.g., novel heterostructures), and engineer/fabricate UWBGRF (microwave/millimeter wave) devices.
- Technology advances include material synthesis (epitaxial growth, growth techniques and characterization, materials/defect engineering), layer depositions, interconnections, layer architectures, wafer bonding, layer bonding, physics-based device design, contact engineering, surface and interface engineering, integral thermal management, high temperature operation, robustness, heterogeneous integration with other devices/materials systems, and other functionality/domains of WBG and UWBG materials/structures, including electronics, optoelectronics, optical, quantum, acoustic, multi-ferroic, and others.
- Thermal applications Any materials processing or integration to use boron arsenide and boron phosphide in any crystal, polycrystal, composite, or other structural forms to in direct or indirect contact with a heating source to conduct or collect heat is considered for this applications. Examples including computer, mobile devices, laptops, smart phones, amplifiers, radars, modulators, LEDs, displayers, vehicles, aircrafts, engines, converters, servers, inverters, turbines, traction, industrial motors, welders, utility, or any circuits heat dissipation or conduction. In addition, thermal applications using boron arsenide of its any crystal or structural forms for thermal energy conversion, storage, or thermal management is considered for this patent.
- BAs substrate can serve more effective heat sink substrate because its thermal conductivity is one order of magnitude higher than currently used materials and can further increase device performance of electronics and photonics device.
- thermal grease which is polymer mixed with silver nanoparticle to enhance heat transport at interface.
- thermal conductivity of thermal grease is still ⁇ lW/mK.
- BAs can help to increase thermal transport at the interface. If nanostructured BAs is applied at the interface with polymer, thermal transport at the interface will increase dramatically.
- any two components so associated can also be viewed as being “operably connected,” or “operably coupled,” to each other to achieve the desired functionality, and any two components capable of being so associated can also be viewed as being “operably coupleable,” to each other to achieve the desired functionality.
- operably coupleable include but are not limited to physically mateable and/or physically interacting components and/or wirelessly interactable and/or wirelessly interacting components and/or logically interacting and/or logically interactable components.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312570A (en) * | 1961-05-29 | 1967-04-04 | Monsanto Co | Production of epitaxial films of semiconductor compound material |
JP2006135026A (en) * | 2004-11-04 | 2006-05-25 | Sharp Corp | Group iii-v compound semiconductor light emitting element and its manufacturing method |
US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
US20190140110A1 (en) * | 2017-11-07 | 2019-05-09 | Arizona Board Of Regents On Behalf Of Arizona State University | HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES |
WO2019152782A1 (en) * | 2018-02-05 | 2019-08-08 | The Regents Of The University Of California | High thermal conductivity boron arsenide for thermal management, electronics, optoelectronics, and photonics applications |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312570A (en) * | 1961-05-29 | 1967-04-04 | Monsanto Co | Production of epitaxial films of semiconductor compound material |
JP2006135026A (en) * | 2004-11-04 | 2006-05-25 | Sharp Corp | Group iii-v compound semiconductor light emitting element and its manufacturing method |
US20160049351A1 (en) * | 2014-08-15 | 2016-02-18 | Board Of Regents University Of Oklahoma | High-Power Electronic Device Packages and Methods |
US20190140110A1 (en) * | 2017-11-07 | 2019-05-09 | Arizona Board Of Regents On Behalf Of Arizona State University | HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES |
WO2019152782A1 (en) * | 2018-02-05 | 2019-08-08 | The Regents Of The University Of California | High thermal conductivity boron arsenide for thermal management, electronics, optoelectronics, and photonics applications |
Non-Patent Citations (1)
Title |
---|
WHITELEY CLINTON E: "Advanced Crystal Growth Techniques with III-V Boron Compound Semiconductors", DISSERTATION, KANSAS STATE UNIVERSITY, 1 January 2011 (2011-01-01), KANSAS STATE UNIVERSITY, XP055976600, Retrieved from the Internet <URL:https://krex.k-state.edu/dspace/handle/2097/8110> [retrieved on 20221101] * |
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