WO2022208603A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2022208603A1
WO2022208603A1 PCT/JP2021/013259 JP2021013259W WO2022208603A1 WO 2022208603 A1 WO2022208603 A1 WO 2022208603A1 JP 2021013259 W JP2021013259 W JP 2021013259W WO 2022208603 A1 WO2022208603 A1 WO 2022208603A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit pattern
electrode
semiconductor device
pair
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/013259
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
賢太 中原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to US18/260,592 priority Critical patent/US20240071868A1/en
Priority to DE112021007408.3T priority patent/DE112021007408T5/de
Priority to JP2023509917A priority patent/JP7438454B2/ja
Priority to CN202180096198.6A priority patent/CN117043939A/zh
Priority to PCT/JP2021/013259 priority patent/WO2022208603A1/ja
Publication of WO2022208603A1 publication Critical patent/WO2022208603A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps

Definitions

  • the present disclosure relates to semiconductor devices.
  • a semiconductor device is provided with a terminal which is an external electrode whose one end is joined to a circuit pattern and whose other end is connected to an external device.
  • a terminal which is an external electrode whose one end is joined to a circuit pattern and whose other end is connected to an external device.
  • Patent Document 1 in order to increase the bonding area between an electrode and a wiring pattern (corresponding to a circuit pattern), one end of an electrode is provided with a pair of triangular bent portions. A structure is disclosed that is bent so as to stand on the joint surface.
  • an object of the present disclosure is to provide a semiconductor device capable of suppressing heat generation at joints between circuit patterns and terminals when a large current is applied.
  • a semiconductor device includes a circuit board having a circuit pattern on which a semiconductor element is mounted, and a terminal that is an external electrode whose one end is joined to the circuit pattern and whose other end is connected to an external device.
  • the terminal comprises: an electrode joint part having a rectangular shape in top view, the lower surface of which is joined to the circuit pattern by a jointing material; and a pair of sub-wiring portions extending from both ends of the main wiring portion in the width direction along a second side and a third side adjacent to the first side of the electrode junction portion.
  • the lower end portions of the pair of sub-wiring portions protrude downward from the lower surface of the electrode joint portion, and the lower end portions of the pair of sub-wiring portions are connected to the circuit pattern by the bonding material together with the lower surface of the electrode joint portion. It is joined.
  • the circuit pattern and the electrode joint portion are joined together with the joint material in a state in which the lower ends of the pair of sub-wiring portions protrude downward from the lower surface of the electrode joint portion. Because of the bonding, the bonding area between the circuit pattern and the terminal increases compared to the case where the lower ends of the pair of sub-wiring portions are bonded to the circuit pattern with a bonding material. As a result, heat generation at the junction between the circuit pattern and the terminal can be suppressed when a large current is applied.
  • FIG. 3 is a front view showing a state in which terminals included in the semiconductor device according to Embodiment 1 are joined to a circuit pattern;
  • FIG. FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1;
  • FIG. 10 is a front view of a terminal included in a semiconductor device according to a second embodiment;
  • 4 is a cross-sectional view taken along the line BB of FIG. 3;
  • FIG. FIG. 10 is a front view showing a state in which a terminal included in a semiconductor device according to a second embodiment is joined to a circuit pattern;
  • 6 is a cross-sectional view taken along line CC of FIG. 5;
  • FIG. 11 is a front view showing a state in which a terminal included in a semiconductor device according to a third embodiment is joined to a circuit pattern
  • FIG. 8 is a cross-sectional view taken along line DD of FIG. 7
  • FIG. 13 is a front view showing a state in which a terminal included in a semiconductor device according to a fourth embodiment is joined to a circuit pattern
  • FIG. 1 is a front view showing a state in which a terminal 3 included in the semiconductor device according to Embodiment 1 is joined to a circuit pattern 2.
  • FIG. 2 is a cross-sectional view taken along line AA of FIG.
  • the semiconductor device includes a circuit board 1, a semiconductor element (not shown), and terminals 3.
  • the semiconductor device further includes a sealing resin (not shown) for sealing the circuit board 1 and the semiconductor element, and a case (not shown) filled with the sealing resin. Therefore, the description of these will be omitted.
  • the circuit board 1 is made of ceramic with excellent thermal conductivity, such as aluminum nitride or silicon nitride, or resin with excellent thermal conductivity.
  • a circuit pattern 2 is provided on the upper surface of the circuit board 1 .
  • the circuit pattern 2 is formed using copper, an aluminum alloy, or the like, and a semiconductor element (not shown) is mounted on the upper surface of the circuit pattern 2 .
  • the terminal 3 is an external electrode, and has one end connected to the circuit pattern 2 and the other end connected to an external device (not shown). Specifically, the terminal 3 includes an electrode connection portion 4 , a main wiring portion 5 , a pair of sub-wiring portions 6 , and a device connection portion 7 .
  • the electrode connection portion 4, the main wiring portion 5, the pair of sub-wiring portions 6, and the device connection portion 7 are made of, for example, a single metal plate having a certain thickness formed using copper or a copper alloy (hereinafter referred to as "before processing. It is manufactured by processing a metal plate of
  • the electrode joint portion 4 has sides 4a and 4d facing each other and sides 4b and 4c adjacent to these sides 4a and 4d, and is formed in a rectangular shape when viewed from above. there is The lower surface of the electrode joint portion 4 is joined to the circuit pattern 2 with a joint material 8 such as solder.
  • the main wiring portion 5 is provided upright on the side 4a of the electrode junction portion 4 as the first side. Specifically, the main wiring portion 5 is formed by bending upward along the side 4a the portion that will become the electrode connection portion 4 in the metal plate before processing. there is although not shown, the lower end of the main wiring portion 5 is positioned at the same height as the lower surface of the electrode joint portion 4 and is joined to the circuit pattern 2 together with the lower surface of the electrode joint portion 4 by a joint material 8 .
  • the pair of sub-wiring portions 6 are formed from both ends of the main wiring portion 5 in the width direction to a side 4b as a second side adjacent to the side 4a of the electrode joint portion 4 and a third side. It extends along the side 4c as a side.
  • the pair of sub-wiring portions 6 are bent in the direction of the sides 4b and 4c with respect to the portion to be the main wiring portions 5 in the metal plate before processing. and arranged in an upright manner along the outer peripheries of the sides 4 b and 4 c of the electrode joint portion 4 .
  • the upper ends of the pair of sub-wiring portions 6 are located above the upper ends of the main wiring portions 5 .
  • the lower ends of the pair of sub-wiring portions 6 protrude below the lower surface of the electrode joint portion 4 . Therefore, the lower ends of the pair of sub-wiring portions 6 protrude below the lower surface of the electrode-jointing portion 4 and are connected to the circuit pattern 2 together with the lower surface of the electrode-jointing portion 4 and the lower end of the main wiring portion 5 by the joining material 8 . are spliced.
  • the device connection portion 7 is formed by bending the portion to be the device connection portion 7 toward the side 4d opposite to the side 4a of the electrode connection portion 4 with respect to the portion to be the main wiring portion 5 in the metal plate before processing. and is connected to an external device (not shown).
  • the device connection portion 7 is formed in a rectangular shape when viewed from above, and extends from the upper end portion of the main wiring portion 5 toward the side 4 d of the electrode connection portion 4 .
  • the electrode connection portion 4, the main wiring portion 5, and the pair of sub-wiring portions 6 correspond to one end portion of the terminal 3 that is connected to the circuit pattern 2, and the device connection portion 7 is connected to an external device (not shown). It corresponds to the other end of the terminal 3 that is connected.
  • the electrode joint portion 4 is formed with a groove 9 penetrating from the upper surface to the lower surface.
  • the groove 9 is formed from the central portion of the side 4d of the electrode connection portion 4 to the central portion of the sides 4b and 4c along the direction parallel to the sides 4b and 4c. Further, the groove 9 is branched at this point in a direction parallel to the sides 4a and 4d and formed over the central portions of the sides 4b and 4c. Further, the groove 9 is formed from this point to the side 4a along the sides 4b and 4c.
  • the width of the upper surface side and the width of the lower surface side of the groove 9 are constant.
  • the terminal 3 and the circuit pattern 2 are heated to a temperature exceeding the melting point of the bonding material 8 in the bonding process. spliced.
  • the bonding material 8 melted by heating penetrates into the groove 9 and spreads within the groove 9 , thereby improving the bonding strength between the electrode bonding portion 4 and the circuit pattern 2 .
  • the semiconductor device includes a circuit board 1 having a circuit pattern 2 on which a semiconductor element is mounted, one end of which is joined to the circuit pattern 2, and the other end of which is connected to an external device.
  • the terminal 3 is provided with a terminal 3 which is an external electrode to be connected.
  • the terminal 3 has an electrode joint portion 4 having a rectangular shape in a top view, the lower surface of which is joined to the circuit pattern 2 by a joint material 8, and sides 4a of the electrode joint portion 4. and a pair of sub-wiring portions 6 extending from both ends of the main wiring portion 5 in the width direction along sides 4b and 4c adjacent to the side 4a of the electrode joint portion 4.
  • the lower ends of the pair of sub-wiring portions 6 protrude downward from the lower surface of the electrode joint portion 4, and the lower ends of the pair of sub-wiring portions 6 are joined together with the lower surface of the electrode joint portion 4 by the bonding material 8. It is joined with the circuit pattern 2 .
  • the circuit is formed with the joint material 8 in a state in which the lower ends of the pair of sub-wiring portions 6 protrude below the lower surface of the electrode joint portion 4 . Since the pattern 2 is bonded, the bonding area between the circuit pattern 2 and the terminal 3 is increased compared to the case where the lower ends of the pair of sub-wiring portions 6 are bonded to the circuit pattern 2 by the bonding material 8 . As a result, heat generation at the junction between the circuit pattern 2 and the terminal 3 can be suppressed when a large current is applied. Therefore, the semiconductor device can be used for a long period of time.
  • FIG. 3 is a front view of terminals 3A included in the semiconductor device according to the second embodiment.
  • 4 is a cross-sectional view taken along the line BB of FIG. 3.
  • FIG. 5 is a front view showing a state where terminal 3A included in the semiconductor device according to the second embodiment is joined to circuit pattern 2.
  • FIG. 6 is a cross-sectional view taken along line CC of FIG.
  • the same components as those described in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
  • the shape of the grooves 9 is different from that in the first embodiment.
  • the width of the upper surface side and the width of the lower surface side of the groove 9 are constant, but in Embodiment 2, the width of the upper surface side of the groove 9 is formed wider than the width of the lower surface side. .
  • the groove 9 has a widened portion 9a on the upper surface side and a constant width portion 9b on the lower surface side.
  • the widened portion 9a has a constant width on the upper surface side of the groove 9, which is wider than the constant width portion 9b.
  • the uniform width portion 9b is formed on the lower surface side of the groove 9 and communicates with the widened portion 9a.
  • the constant width portion 9b has a constant width narrower than that of the widened portion 9a.
  • the bonding material 8 melted by heating penetrates into the groove 9 and spreads within the groove 9 , thereby improving the bonding strength between the electrode bonding portion 4 and the circuit pattern 2 .
  • the width of the upper surface side is formed wider than the width of the lower surface side in the portion that is branched in the direction and formed over the central portion of the sides 4b and 4c.
  • the width of the upper surface side and the width of the lower surface side of the portion formed from the central portion of the sides 4b and 4c to the side 4a are constant.
  • the bonding material 8 filled in the groove 9 spreads to cover the periphery of the groove 9 on the upper surface of the electrode bonding portion 4. is desirable.
  • the bonding material 8 filled in the groove 9 can have an anchor effect. Therefore, the bonding strength between the electrode bonding portion 4 and the circuit pattern 2 is further improved. This further improves the reliability of the semiconductor device.
  • FIG. 7 is a front view showing a state in which terminal 3B included in the semiconductor device according to the third embodiment is joined to circuit pattern 2.
  • FIG. 8 is a cross-sectional view taken along line DD of FIG. 7.
  • Embodiment 3 the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals, and descriptions thereof are omitted.
  • the third embodiment differs from the first embodiment in that a metal plate 20 is provided.
  • the metal plate 20 is made of copper, an aluminum alloy, or the like, and is formed to have the same thickness as the electrode joint portion 4, and has a smaller top-view outline than the electrode joint portion 4.
  • the metal plate 20 is arranged above the electrode connection portion 4 in a portion surrounded by the main wiring portion 5 and the pair of sub-wiring portions 6, and the main wiring portion 5 and the pair of sub-wiring portions 6 are connected by a bonding material 20a such as solder. It is joined to the sub-wiring portion 6 .
  • the lower surface of the metal plate 20 is joined to the upper surface of the electrode joint portion 4 with a joining material 8a such as solder.
  • a metal plate 20 is provided above the electrode joint portion 4 in order to increase the current path of the terminal 3B.
  • a metal block thicker than the metal plate 20 may be provided instead of the metal plate 20 .
  • the metal plate 20 or the metal block is provided above the electrode junction portion 4, and the metal plate 20 or the metal block includes the main wiring portion 5 and the pair of sub-wiring portions. 6 is connected.
  • the current path of the terminal 3B is increased, the electrical resistance of the terminal 3B is reduced, and the connection between the circuit pattern 2 and the terminal 3B is reduced when a large current is applied. Heat generation at the location can be further suppressed.
  • FIG. 9 is a front view showing a state where terminals 3C included in the semiconductor device according to the fourth embodiment are joined to circuit patterns 2.
  • FIG. 9 the same components as those described in Embodiments 1 to 3 are denoted by the same reference numerals, and descriptions thereof are omitted.
  • the fourth embodiment differs from the first embodiment in that slits 21 are formed to penetrate from the front surface to the back surface of the main wiring portion 5 .
  • the slit 21 is formed so as to extend vertically in the central portion in the width direction of the main wiring portion 5 .
  • a current path of the terminal 3C includes a path passing through the main wiring portion 5 and a path passing through the pair of sub-wiring portions 6. Since the device connection portion 7 is directly connected to the main wiring portion 5, the main wiring portion 5 More current flows through the path through the pair of sub-wiring portions 6 than through the path through the pair of sub-wiring portions 6 . As a result, heat is likely to be generated in the main wiring portion 5 when a large current is applied.
  • a slit 21 is formed in the main wiring portion 5 in order to reduce the current density of the main wiring portion 5 and make the current density of the main wiring portion 5 and the pair of sub-wiring portions 6 uniform.
  • the slit 21 is formed to have a size that allows the current density of the main wiring portion 5 and the pair of sub-wiring portions 6 to be uniform.

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
PCT/JP2021/013259 2021-03-29 2021-03-29 半導体装置 Ceased WO2022208603A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US18/260,592 US20240071868A1 (en) 2021-03-29 2021-03-29 Semiconductor device
DE112021007408.3T DE112021007408T5 (de) 2021-03-29 2021-03-29 Halbleitervorrichtung
JP2023509917A JP7438454B2 (ja) 2021-03-29 2021-03-29 半導体装置
CN202180096198.6A CN117043939A (zh) 2021-03-29 2021-03-29 半导体装置
PCT/JP2021/013259 WO2022208603A1 (ja) 2021-03-29 2021-03-29 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/013259 WO2022208603A1 (ja) 2021-03-29 2021-03-29 半導体装置

Publications (1)

Publication Number Publication Date
WO2022208603A1 true WO2022208603A1 (ja) 2022-10-06

Family

ID=83455713

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/013259 Ceased WO2022208603A1 (ja) 2021-03-29 2021-03-29 半導体装置

Country Status (5)

Country Link
US (1) US20240071868A1 (https=)
JP (1) JP7438454B2 (https=)
CN (1) CN117043939A (https=)
DE (1) DE112021007408T5 (https=)
WO (1) WO2022208603A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277870U (https=) * 1988-12-02 1990-06-14
JPH05144986A (ja) * 1991-11-25 1993-06-11 Fuji Electric Co Ltd トランジスタモジユール
JPH09121019A (ja) * 1995-10-25 1997-05-06 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277870A (ja) * 1988-06-30 1990-03-16 Mitsubishi Electric Corp 並列計算機システム
DE102008005547B4 (de) * 2008-01-23 2013-08-29 Infineon Technologies Ag Leistungshalbleitermodul und Schaltungsanordnung mit einem Leistungshalbleitermodul
CN105981167B (zh) * 2014-08-12 2019-05-28 富士电机株式会社 半导体装置
BE1028071B1 (de) * 2020-02-19 2021-09-13 Phoenix Contact Gmbh & Co Elektrisches Kontaktelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0277870U (https=) * 1988-12-02 1990-06-14
JPH05144986A (ja) * 1991-11-25 1993-06-11 Fuji Electric Co Ltd トランジスタモジユール
JPH09121019A (ja) * 1995-10-25 1997-05-06 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
DE112021007408T5 (de) 2024-01-18
JP7438454B2 (ja) 2024-02-26
JPWO2022208603A1 (https=) 2022-10-06
US20240071868A1 (en) 2024-02-29
CN117043939A (zh) 2023-11-10

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