WO2022201278A1 - Procédé de génération d'arrachage initial d'une feuille de plaquettes et dispositif de saisie de puces semi-conductrices - Google Patents

Procédé de génération d'arrachage initial d'une feuille de plaquettes et dispositif de saisie de puces semi-conductrices Download PDF

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Publication number
WO2022201278A1
WO2022201278A1 PCT/JP2021/011840 JP2021011840W WO2022201278A1 WO 2022201278 A1 WO2022201278 A1 WO 2022201278A1 JP 2021011840 W JP2021011840 W JP 2021011840W WO 2022201278 A1 WO2022201278 A1 WO 2022201278A1
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WIPO (PCT)
Prior art keywords
wafer sheet
stage
semiconductor die
wafer
initial
Prior art date
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PCT/JP2021/011840
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English (en)
Japanese (ja)
Inventor
徹 前田
洋 尾又
Original Assignee
株式会社新川
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社新川 filed Critical 株式会社新川
Priority to PCT/JP2021/011840 priority Critical patent/WO2022201278A1/fr
Priority to JP2023508195A priority patent/JPWO2022201278A1/ja
Priority to KR1020237029316A priority patent/KR20230136204A/ko
Priority to CN202180070411.6A priority patent/CN116508140A/zh
Publication of WO2022201278A1 publication Critical patent/WO2022201278A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to an initial delamination generation method for generating an initial delamination between a semiconductor die and a wafer sheet before picking up the semiconductor die, and a semiconductor die pick-up apparatus for picking up the semiconductor die attached to the upper surface of the wafer sheet.
  • an initial delamination generation method for generating an initial delamination between a semiconductor die and a wafer sheet before picking up the semiconductor die
  • a semiconductor die pick-up apparatus for picking up the semiconductor die attached to the upper surface of the wafer sheet.
  • a semiconductor die is manufactured by cutting a 6-inch or 8-inch wafer into a predetermined size.
  • a wafer sheet is attached to the back surface so that the cut semiconductor dies do not fall apart, and the wafer is cut from the front surface side with a dicing saw or the like.
  • the wafer sheet attached to the back surface is slightly cut, but is not cut, and is in a state of holding each semiconductor die.
  • each cut semiconductor die is picked up from the wafer sheet one by one and sent to the next process such as die bonding.
  • a wafer sheet to which semiconductor dies are attached is fixed on a stage, and a roller provided with a plurality of projecting members is rotated to pick up the wafer with a plurality of projecting members.
  • a method has been proposed in which a sheet is repeatedly pushed up to separate the semiconductor dies from the wafer sheet, and then the semiconductor dies are picked up by a collet (see, for example, Patent Document 1).
  • the semiconductor die and the wafer sheet may not be completely separated depending on the adhesive strength of the wafer sheet, resulting in a pick-up error in which the semiconductor die cannot be picked up.
  • an object of the present invention is to reduce semiconductor die pick-up errors in a semiconductor die pick-up device.
  • An initial delamination generation method of the present invention is a method for generating an initial delamination for generating an initial delamination between a semiconductor die and a wafer sheet before picking up the semiconductor die attached to the upper surface of the wafer sheet, wherein the semiconductor die is attached to the upper surface of the wafer sheet.
  • a wafer holder holding a wafer sheet to which a die is attached; and a cylindrical stage having a suction surface for sucking the lower surface of the wafer sheet, the stage having a cylindrical shape and a curved surface connecting the suction surface and the side surface of the wafer sheet; a preparation step of preparing a pick-up device for picking up the semiconductor die attached to the top surface of the wafer; and an initial delamination generating step of moving laterally relative to the sheet to generate an initial delamination between the semiconductor die and the wafer sheet.
  • the initial peeling occurs at the edge of the semiconductor die to be picked up in the initial peeling process to reduce the adhesive force between the semiconductor die and the wafer sheet, thereby reducing semiconductor die pick-up errors. can do.
  • the initial delamination generation step may be performed by continuously moving the stage with respect to the wafer sheet, or by pushing up the lower surface of the wafer sheet by 3 mm to 5 mm.
  • initial delamination can be effectively generated at the edge of the semiconductor die, the adhesive force between the semiconductor die and the wafer sheet can be reduced, and pick-up errors of the semiconductor die can be reduced.
  • the initial delamination generation step is performed so that the suction surface rubs part or all of the region of the lower surface of the wafer sheet corresponding to the region of the upper surface of the wafer sheet to which the semiconductor die is attached.
  • the stage may be moved laterally relative to the wafer sheet.
  • the semiconductor die and the wafer sheet to be picked up can be initially detached, reducing the adhesive force.
  • the initial peeling generation step includes a reciprocating step of reciprocating the stage along a first lateral direction, and a reciprocating step of moving the stage in a second lateral direction orthogonal to the first lateral direction. and the round-trip route changing step of changing the route may be alternately repeated.
  • the stage When the stage is moved in the lateral direction relative to the wafer sheet, the part of the wafer sheet to which the semiconductor die to be picked up rides on the adsorption surface of the stage and the adsorption surface of the stage. An initial delamination occurs between the edge of the semiconductor die and the wafer sheet upon separation from the wafer.
  • the initial detachment between the semiconductor die and the wafer sheet is generated multiple times to reduce the adhesive force between the semiconductor die and the wafer sheet, thereby reducing the pick-up error of the semiconductor die. can be reduced.
  • the wafer sheet may be circular, the first lateral direction may be the circumferential direction of the wafer sheet, and the second lateral direction may be the radial direction of the wafer sheet.
  • the number of movements in the second lateral direction can be reduced by moving the stage in the circumferential direction relative to the wafer sheet, and the semiconductor die and the wafer sheet can be moved in a convenient manner. Initial delamination can occur and reduce adhesion between the semiconductor die and the wafer sheet.
  • the wafer sheet is circular, and the initial delamination generation step includes spirally laterally moving the stage from the outer periphery of the wafer sheet toward the center or from the center toward the outer periphery, The wafer sheet may be laterally moved from the center to the perimeter or spirally from the perimeter to the center.
  • the stage is spirally reciprocated with respect to the wafer sheet to effectively generate initial separation between the semiconductor die and the wafer sheet with a simple operation. It is possible to reduce the adhesive force between.
  • a semiconductor die pick-up apparatus comprises a wafer holder holding a wafer sheet having a semiconductor die attached to the upper surface thereof, a wafer holder driving section for laterally driving the wafer holder, and a suction device for sucking the lower surface of the wafer sheet.
  • a control that adjusts the operations of a cylindrical stage that includes a surface and has a suction surface and a side surface that are connected by a curved surface, a stage driving unit that drives the stage in the vertical direction, a wafer holder driving unit, and a stage driving unit.
  • control unit raises the stage by the stage driving unit to push up the lower surface of the wafer sheet,
  • the stage is laterally moved relative to the wafer sheet by the wafer holder driving section so that the suction surface of the stage rubs against the lower surface of the wafer sheet.
  • the semiconductor to be picked up is moved laterally relative to the wafer sheet so as to rub the lower surface of the wafer sheet while the stage is raised to push up the lower surface of the wafer sheet. It causes initial delamination at the edge of the die and reduces adhesion between the semiconductor die and the wafer sheet. Since the semiconductor die is picked up after the adhesive force is reduced, it is possible to reduce pick-up errors of the semiconductor die.
  • the present invention can reduce semiconductor die pick-up errors in a semiconductor die pick-up device.
  • FIG. 1 is a system diagram showing the configuration of a semiconductor die pick-up device according to an embodiment
  • FIG. 2 is a flow chart showing the operation of the semiconductor die pick-up device shown in FIG. 1
  • FIG. 4 is an explanatory view showing an initial delamination generation step of the semiconductor die pick-up apparatus shown in FIG. 1, and is a cross-sectional view showing a state in which the lower surface of the wafer sheet is pushed up by a first height H1 on the stage
  • FIG. 4 is an explanatory view showing an initial delamination generation process of the semiconductor die pick-up device shown in FIG. 1, and is a plan view showing a path of relative movement of the stage with respect to the wafer sheet
  • FIG. 4 is an explanatory view showing an initial delamination generation process of the semiconductor die pick-up device shown in FIG. 1, and is a plan view showing a path of relative movement of the stage with respect to the wafer sheet
  • FIG. 4 is an explanatory view showing an initial delamination generation process of the semiconductor die pick-
  • FIG. 4 is an enlarged cross-sectional view showing the first pattern of the semiconductor die separated from the wafer sheet at the A portion shown in FIG. 3 ;
  • FIG. 4 is an enlarged cross-sectional view showing a second pattern of the semiconductor die separated from the wafer sheet at the A portion shown in FIG. 3 ;
  • 2 is a cross-sectional view showing a state in which a semiconductor die is picked up by a collet in the semiconductor die pick-up device shown in FIG. 1;
  • FIG. FIG. 10 is an explanatory view showing the initial delamination generation step of the semiconductor die pick-up device shown in FIG. 1, and is a plan view showing another route of relative movement of the stage with respect to the wafer sheet;
  • FIG. 10 is an explanatory view showing the initial delamination generation step of the semiconductor die pick-up device shown in FIG. 1, and is a plan view showing another route of relative movement of the stage with respect to the wafer sheet;
  • a pickup device 100 for a semiconductor die 15 will be described below with reference to the drawings.
  • directions orthogonal to each other on a horizontal plane are the X direction and Y direction, and the vertical direction is the Z direction.
  • a semiconductor die 15 pickup device 100 (hereinafter referred to as pickup device 100) of the embodiment includes a wafer holder 10, a stage 20, a collet 18, a wafer holder driving section 61, and a stage driving section. 62 , a collet driving section 63 , vacuum valves 64 and 65 , a vacuum device 68 , and a control section 70 .
  • the wafer holder 10 includes an annular expand ring 16 having a flange portion and a ring retainer 17, and holds the wafer sheet 12 with the semiconductor die 15 cut from the wafer 11 attached to the upper surface 12a.
  • the wafer holder 10 is moved in the horizontal XY directions by the wafer holder drive unit 61 .
  • the wafer sheet 12 with the semiconductor die 15 attached to the upper surface 12a is held by the wafer holder 10 as follows.
  • a wafer sheet 12 is attached to the back surface of the wafer 11 , and a metal ring 13 is attached to the outer peripheral portion of the wafer sheet 12 .
  • the wafer 11 is cut from the front side by a dicing saw or the like into semiconductor dies 15, and gaps 14 are formed between the semiconductor dies 15 during dicing. Although the wafer 11 is cut, the wafer sheet 12 is not cut, and each semiconductor die 15 is held by the wafer sheet 12 .
  • the lower surface 12b of the wafer sheet 12 with the semiconductor die 15 attached to the upper surface 12a is placed in contact with the holding surface 16a of the expand ring 16, and the ring 13 is positioned above the flange 16b of the expand ring 16. Adjust so that Then, the ring 13 is pressed onto the flange 16b of the expand ring 16 by the ring presser 17 from above as indicated by an arrow 80 in FIG. As a result, the wafer sheet 12 with the semiconductor die 15 attached to the upper surface 12 a is held by the wafer holder 10 . At this time, the lower surface 12 b of the wafer sheet 12 is fixed to the outer peripheral edge of the holding surface 16 a of the expand ring 16 .
  • the stage 20 is arranged on the lower surface of the wafer holder 10 .
  • the stage 20 is composed of a cylindrical portion 21 and an upper end plate 22 that is a lid on the upper side of the cylindrical portion 21 .
  • the surface of the upper end plate 22 is a suction surface 22a that suctions the lower surface 12b of the wafer sheet 12.
  • the attraction surface 22a is flat and connected to the side surface of the cylindrical portion 21 at a curved corner portion 25.
  • An opening 23 through which the moving element 30 enters and exits is provided in the center of the upper end plate 22 , and suction holes 24 for sucking the lower surface 12 b of the wafer sheet 12 are provided around the opening 23 .
  • a moving element 30 and a moving element driving section 29 for driving the moving element 30 are provided inside the cylindrical portion 21 .
  • the moving element 30 is composed of a first push-up pin 31 arranged at the center of the stage 20 and a cylindrical second push-up pin 32 arranged around the outer periphery of the first push-up pin 31 .
  • the moving element drive section 29 includes a drive motor, gears, a link mechanism, etc., and drives the first push-up pin 31 and the second push-up pin 32 vertically so as to protrude from the attraction surface 22 a through the opening 23 .
  • the stage 20 as a whole is vertically moved by the stage driving section 62 .
  • the inside of the stage 20 is connected to a vacuum device 68 via a vacuum valve 64 .
  • the collet 18 is arranged on the upper side of the wafer sheet 12 to suck and hold the semiconductor die 15 on the lower surface 12 b and pick up the semiconductor die 15 from the upper surface 12 a of the wafer sheet 12 .
  • the collet 18 is provided with a suction hole 19 for vacuum-sucking the semiconductor die 15 to the lower surface 12b.
  • the suction hole 19 is connected to a vacuum device 68 via a vacuum valve 65 .
  • the collet 18 is moved vertically and horizontally by the collet drive unit 63 .
  • the wafer holder drive section 61, the stage drive section 62, the collet drive section 63, the vacuum valves 64 and 65, the vacuum device 68, and the moving element drive section 29 are connected to the control section 70, and the control section 70 commands.
  • the control unit 70 is a computer that includes a CPU 71 that is a processor that internally processes information, and a memory 72 that stores programs and the like.
  • FIG. 1 the operation of picking up the semiconductor die 15 by the pickup device 100 will be described with reference to FIGS. 2 to 7.
  • the CPU 71 of the control unit 70 starts the initial peeling process.
  • the CPU 71 drives the stage driving section 62 to press the suction surface 22 a of the stage 20 against the lower surface 12 b of the wafer sheet 12 .
  • the lower surface 12b of the wafer sheet 12 is pushed up by a first height H1 above the initial height.
  • the width of the gap 14 between the semiconductor dies 15 attached on the wafer sheet 12 is the width W1.
  • the first height H1 is obtained by relatively laterally moving the suction surface 22a of the stage 20 so as to rub against the lower surface 12b of the wafer sheet 12, thereby increasing the height between the semiconductor die 15 and the wafer sheet. 12, the initial separation 75, 76 (see FIGS. 5 and 6) can be formed, and the height may be, for example, about 3 mm to 5 mm.
  • the wafer sheet 12 is pushed up by the stage 20 during a normal pick-up operation of the semiconductor die 15, but the lifting height at this time is approximately 1 mm.
  • the lifting height is higher than the amount of lifting during normal pickup operation of the semiconductor die 15 .
  • the CPU 71 of the control unit 70 causes the wafer holder drive unit 61 to move the wafer holder 10 in the XY directions, which are horizontal directions, as indicated by arrows B in FIG. 3, as shown in step S102 of FIG.
  • the stage 20 moves in the XY directions, which are lateral directions relative to the wafer sheet 12, as indicated by arrows C in FIG.
  • the path of lateral movement of the stage 20 with respect to the wafer sheet 12 can take various paths, one example of which is shown in FIG.
  • First as indicated by an arrow 81 in FIG. 4, the stage 20 is moved toward the positive side of the X direction, which is the first horizontal direction, with respect to the wafer sheet 12. After that, the moving direction is reversed so that the stage shown in FIG. The stage 20 is moved toward the negative side in the X direction with respect to the wafer sheet 12 as indicated by an arrow 82 .
  • the stage 20 is moved toward the positive side of the Y direction, which is the second horizontal direction, and then again as indicated by arrows 84 and 85 in FIG. , to reciprocate the stage 20 in the X direction.
  • the reciprocating process of reciprocating the stage 20 along the X direction with respect to the wafer sheet 12 and the reciprocating path changing process of moving the stage 20 in the Y direction to change the reciprocating movement path are alternately repeated.
  • the stage 20 can be moved in the XY directions over the entire area of the lower surface 12b of the wafer sheet 12 corresponding to the area of the upper surface 12a of the wafer sheet 12 to which the semiconductor die 15 is attached.
  • the stage 20 pushes the lower surface 12 b of the wafer sheet 12 upward by the first height H ⁇ b>1 , the lower surface 12 b of the wafer sheet 12 curves along the curved corners 25 of the stage 20 and obliquely downwards toward the expand ring 16 . direction. Therefore, when the wafer holder 10 is moved toward the negative side in the X direction as indicated by an arrow 86 in FIG. side, and the suction surface 22a of the stage 20 moves relatively to the plus side in the X direction so as to rub against the lower surface 12b of the wafer sheet 12 .
  • FIG. 5 shows a case where the adhesive force between the semiconductor die 15 on the positive side in the X direction and the upper surface 12a of the wafer sheet 12 is greater than the adhesive force on the negative side in the X direction.
  • the positive side portion of the semiconductor die 15 in the X direction sticks to the upper surface 12a of the wafer sheet 12 extending obliquely downward from the corner 25.
  • the edge portion of the semiconductor die 15 on the minus side in the X direction which has a low adhesion, is peeled off from the upper surface 12a of the wafer sheet 12 as indicated by an arrow 88 in FIG.
  • the width of the upper end portion of the gap 14 between the semiconductor die 15 and the other semiconductor die 15a located on the negative side in the X direction is a width W2 that is wider than the initial width W1 of the gap 14 . Therefore, when the stage 20 is moved laterally with respect to the wafer sheet 12, the semiconductor die 15 does not come into contact with another adjacent semiconductor die 15a and crack or chip.
  • FIG. 6 shows a case where the adhesive force between the semiconductor die 15 and the upper surface 12a of the wafer sheet 12 on the negative side in the X direction is greater than the adhesive force on the positive side in the X direction.
  • the portion of the semiconductor die 15 on the negative side in the X direction touches the upper surface 12 a of the wafer sheet 12 extending horizontally along the adsorption surface 22 a of the stage 20 . It remains attached.
  • the semiconductor die 15 when the semiconductor die 15 reaches the corner portion 25 of the stage 20, the portion of the wafer sheet 12 to which the edge portion of the semiconductor die 15 on the positive side in the X direction is affixed is shifted as indicated by an arrow 89 in FIG. Then, it bends obliquely downward from the corner 25 of the stage 20 toward the expand ring 16 . As a result, the wafer sheet 12 is peeled off from the plus side edge portion in the X direction of the semiconductor die 15 to form an initial peel 76 . At this time, the width of the upper end portion of the gap 14 between the semiconductor die 15 and the other semiconductor die 15a located on the negative side in the X direction is the same width W1 as the width W1 of the gap 14 at the beginning. Therefore, the semiconductor die 15 does not come into contact with another adjacent semiconductor die 15a and crack or chip.
  • the semiconductor die 15 moves forward.
  • An initial peel 75 or 76 is formed once each on the return path. This reduces the adhesion between the semiconductor die 15 and the wafer sheet 12 by forming an initial delamination 75 or 76 at the edge of the semiconductor die 15 .
  • the semiconductor die 15 of the initial separation 75 and 76 described with reference to FIGS. It may stick.
  • the adhesive force at the reattached portion is smaller than the initial adhesive force, the adhesive force between the semiconductor die 15 and the wafer sheet 12 is reduced.
  • step S103 of FIG. 2 the CPU 71 of the control unit 70 moves the stage 20 in the XY directions for the entire area of the lower surface 12b of the wafer sheet 12 corresponding to the area of the upper surface 12a of the wafer sheet 12 to which the semiconductor die 15 is attached. to determine whether it was moved to That is, it is determined whether or not the wafer sheet 12 below all the semiconductor dies 15 attached to the upper surface 12a of the wafer sheet 12 shown in FIG. If the CPU 71 determines NO in step S103 of FIG. 2, the CPU 71 returns to step S102 of FIG. On the other hand, when the CPU 71 determines YES in step S103 of FIG. 2, it ends the initial detachment generation process, proceeds to step S104 of FIG. 2, and starts the pick-up process.
  • step S104 in FIG. 2 the CPU 71 of the control unit 70 causes the wafer holder drive unit 61 to move the wafer holder 10 in the XY directions so that the attraction surface 22a of the stage 20 is moved under the semiconductor die 15 to be picked up. move to
  • the CPU 71 of the control unit 70 raises the stage 20 by the stage driving unit 62 to push up the lower surface 12b of the wafer sheet 12 by the second height H2 (see FIG. 7).
  • the second height H2 is the same height as the lift-up height during the normal pick-up operation of the semiconductor die 15 described above, and is, for example, about 1 mm, and is higher than the first height H1 described above. small.
  • the CPU 71 of the control unit 70 opens the vacuum valve 64 to evacuate the inside of the stage 20, as shown in step S106 of FIG. As a result, the suction holes 24 of the stage 20 are evacuated, and the lower surface 12b of the wafer sheet 12 is brought into close contact with the suction surface 22a of the stage 20. As shown in FIG.
  • step S107 of FIG. 2 and FIG. 7 the CPU 71 of the control unit 70 causes the moving element drive unit 29 to move the first push-up pin 31 and the second push-up pin 32 constituting the moving element 30 to the attracting surface 22a. Then, the semiconductor die 15 to be picked up from under the wafer sheet 12 is pushed up. Further, the control unit 70 moves the position of the collet 18 directly above the semiconductor die 15 to be picked up by the collet driving unit 63 , opens the vacuum valve 65 to evacuate the suction hole 19 of the collet 18 , and A semiconductor die 15 is picked up.
  • the CPU 71 of the control unit 70 determines whether all the semiconductor dies 15 to be picked up in step S108 of FIG. 2 have been picked up. When the CPU 71 determines NO in step S108 of FIG. 2, the CPU 71 returns to step S104 of FIG.
  • step S108 of FIG. 2 the CPU 71 ends the pick-up process and ends the operation.
  • the pick-up apparatus 100 described above causes initial peeling 75 and 76 at the edges of the semiconductor die 15 to be picked up in the initial peeling generating process, and after reducing the adhesive force between the semiconductor die 15 and the wafer sheet 12, , the semiconductor die 15 is picked up by executing the pick-up process, so that pick-up errors of the semiconductor die 15 can be reduced.
  • the pickup apparatus 100 of the embodiment generates initial delamination 75 and 76 between the semiconductor die 15 and the wafer sheet 12 multiple times by reciprocating the stage 20 with respect to the wafer sheet 12 in the initial delamination generation process. to reduce the adhesive strength of the wafer sheet 12 . As a result, pick-up errors of the semiconductor die 15 can be reduced.
  • the stage 20 in the initial delamination generation process, the stage 20 is reciprocated in the X direction with respect to the wafer sheet 12 as shown in FIG.
  • the suction surface 22a of the wafer sheet 12 is moved laterally so as to rub against the lower surface 12b of the wafer sheet 12, the present invention is not limited to this.
  • the stage 20 is moved clockwise in the circumferential direction as indicated by an arrow 91, the direction of movement is reversed and the stage 20 is moved counterclockwise in the circumferential direction as indicated by an arrow 92. It is moved to reciprocate along the circumferential direction. After that, the stage 20 is moved in the radial direction as indicated by arrow 93 in FIG. 8 to change the reciprocating path radially inward, and then the stage 20 is moved in the circumferential direction as indicated by arrows 94 and 95 in FIG. , may be alternately repeated.
  • the stage 20 is spirally laterally moved from the outer periphery toward the center of the wafer sheet 12, and then the direction of movement is reversed to move the wafer sheet 12 from the center toward the outer periphery. It may be laterally moved in a spiral manner. Alternatively, on the contrary, after the stage 20 is spirally laterally moved from the center of the wafer sheet 12 toward the outer periphery, the direction of movement is reversed to spirally laterally move the wafer sheet 12 from the outer periphery toward the center. You may let
  • initial delamination 75 and 76 can be effectively generated between the semiconductor die 15 and the wafer sheet 12 with a simple operation.
  • the stage 20 is moved in the XY directions for the entire area of the lower surface 12b of the wafer sheet 12 corresponding to the area of the upper surface 12a of the wafer sheet 12 to which the semiconductor die 15 is attached.
  • the semiconductor die 15 has been described as being picked up later, the present invention is not limited to this. For example, when picking up a portion of the semiconductor die 15 attached to the upper surface 12a of the wafer sheet 12, the portion of the lower surface 12b of the wafer sheet 12 to which the semiconductor die 15 to be picked up is attached. After moving the stage 20 in the XY directions in , the semiconductor die 15 may be picked up.
  • the pickup device 100 of the embodiment has been described above, and the operation of the pickup device 100 described with reference to FIGS. It is also executed.
  • the initial delamination generation method performed by the pickup apparatus 100 of the embodiment generates an initial delamination between the semiconductor die 15 and the wafer sheet 12 before picking up the semiconductor die 15 attached to the upper surface 12a of the wafer sheet 12.
  • the stage 20 is raised to push up the lower surface 12b of the wafer sheet 12, and the stage 20 is moved against the wafer sheet 12 so that the suction surface 22a of the stage 20 rubs against the lower surface 12b of the wafer sheet 12. relative lateral movement to create an initial delamination between the semiconductor die 15 and the wafer sheet 12 .
  • the adhesive force between the semiconductor die 15 and the wafer sheet 12 can be reduced before the semiconductor die 15 is picked up.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

La présente invention amène un arrachage initial à se produire entre une puce semi-conductrice (15) et une feuille de plaquettes (12) en élevant un étage (20) et en poussant vers le haut une surface inférieure (12b) de la feuille de plaquettes (12), et en déplaçant relativement l'étage (20) dans une direction horizontale par rapport à la feuille de plaquettes (12) afin de frotter la surface inférieure (12b) de la feuille de plaquettes (12) avec une surface d'aspiration (22a) de l'étage (20).
PCT/JP2021/011840 2021-03-23 2021-03-23 Procédé de génération d'arrachage initial d'une feuille de plaquettes et dispositif de saisie de puces semi-conductrices WO2022201278A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP2021/011840 WO2022201278A1 (fr) 2021-03-23 2021-03-23 Procédé de génération d'arrachage initial d'une feuille de plaquettes et dispositif de saisie de puces semi-conductrices
JP2023508195A JPWO2022201278A1 (fr) 2021-03-23 2021-03-23
KR1020237029316A KR20230136204A (ko) 2021-03-23 2021-03-23 웨이퍼 시트의 초기 박리 발생 방법 및 반도체 다이의 픽업 장치
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JP2004186352A (ja) * 2002-12-03 2004-07-02 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
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JPH06295930A (ja) * 1993-04-08 1994-10-21 Fujitsu Ltd 半導体チップ剥離装置及び剥離方法
JPH09223728A (ja) * 1996-02-19 1997-08-26 Hitachi Ltd ペレットのピックアップ方法
JP2000151187A (ja) * 1998-11-16 2000-05-30 Citizen Electronics Co Ltd 電子部品装着機
JP2001118862A (ja) * 1999-11-09 2001-04-27 Nec Machinery Corp ペレットピックアップ装置
JP2003273195A (ja) * 2002-01-09 2003-09-26 Murata Mfg Co Ltd チップ部品供給装置
JP2004152858A (ja) * 2002-10-29 2004-05-27 Renesas Technology Corp 半導体製造装置及び方法
JP2004186352A (ja) * 2002-12-03 2004-07-02 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP2011129821A (ja) * 2009-12-21 2011-06-30 Fujitsu Semiconductor Ltd 半導体チップのピックアップ装置及び半導体チップの製造方法
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