WO2022170752A1 - 基于mos管的非线性响应mri图像增强超构表面器件 - Google Patents

基于mos管的非线性响应mri图像增强超构表面器件 Download PDF

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Publication number
WO2022170752A1
WO2022170752A1 PCT/CN2021/113730 CN2021113730W WO2022170752A1 WO 2022170752 A1 WO2022170752 A1 WO 2022170752A1 CN 2021113730 W CN2021113730 W CN 2021113730W WO 2022170752 A1 WO2022170752 A1 WO 2022170752A1
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Prior art keywords
electrode layer
magnetic field
control circuit
field enhancement
mos transistor
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PCT/CN2021/113730
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English (en)
French (fr)
Inventor
赵乾
池中海
孟永钢
郑卓肇
易懿
王亚魁
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Tsinghua University
Beijing Tsinghua Changgeng Hospital
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Tsinghua University
Beijing Tsinghua Changgeng Hospital
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/34—Constructional details, e.g. resonators, specially adapted to MR
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/05—Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves
    • A61B5/055—Detecting, measuring or recording for diagnosis by means of electric currents or magnetic fields; Measuring using microwaves or radio waves involving electronic [EMR] or nuclear [NMR] magnetic resonance, e.g. magnetic resonance imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/36—Electrical details, e.g. matching or coupling of the coil to the receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/38—Systems for generation, homogenisation or stabilisation of the main or gradient magnetic field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/44—Arrangements or instruments for measuring magnetic variables involving magnetic resonance using nuclear magnetic resonance [NMR]
    • G01R33/48—NMR imaging systems
    • G01R33/54—Signal processing systems, e.g. using pulse sequences ; Generation or control of pulse sequences; Operator console
    • G01R33/56—Image enhancement or correction, e.g. subtraction or averaging techniques, e.g. improvement of signal-to-noise ratio and resolution
    • G01R33/565—Correction of image distortions, e.g. due to magnetic field inhomogeneities

Definitions

  • the present application relates to the technical field of magnetic resonance imaging, and in particular, to a magnetic field enhancement component and a magnetic field enhancement device.
  • MRI Magnetic Resonance Imaging, magnetic resonance imaging technology
  • the signal strength transmitted by traditional MRI equipment mainly depends on the strength of the static magnetic field B0.
  • Using a high magnetic field or even an ultra-high magnetic field system can improve the signal-to-noise ratio, resolution and shorten the scanning time of the image.
  • the specific working principle is to use the electromagnetic resonance in the structure formed by the metamaterial to realize the adjustment of electromagnetic parameters such as anisotropy and gradient distribution.
  • electromagnetic parameters such as anisotropy and gradient distribution.
  • parameters such as geometric size, shape and dielectric constant of metamaterials, resonance enhancement at different frequency points can be achieved.
  • radio frequency transmit phase there are two radio frequency phases: the radio frequency transmit phase and the radio frequency receive phase.
  • the RF fields of the RF transmit phase and the RF receive phase have the same resonant frequency. Therefore, the structure formed by metamaterials will greatly increase the RF transmission field while enhancing the RF reception field. At this time, after the RF emission field is enhanced, the quality of the MRI image will be degraded.
  • conventional magnetic field enhancement assemblies include a dielectric plate and first and second electrodes on the front and back of the dielectric plate, respectively. The orthographic projection of the second electrode on the dielectric plate is located at both ends of the orthographic projection of the first electrode on the dielectric plate, so as to form a parallel plate capacitor.
  • the structure of the traditional magnetic field enhancement component only has frequency selectivity, so that the magnetic field enhancement component exhibits the characteristic of linear response, which will enhance the RF transmitting field and the RF receiving field at the same time, resulting in the degradation of the MRI image quality.
  • the present application provides a magnetic field enhancement component and a magnetic field enhancement device.
  • the present application provides a magnetic field enhancement assembly.
  • the magnetic field enhancement component includes a first dielectric layer, a first electrode layer, a second electrode layer, and a fourth control circuit.
  • the first dielectric layer has a first surface.
  • the first dielectric layer has a first end and a second end opposite to each other.
  • the first electrode layer is disposed on the first surface and close to the second end.
  • the second electrode layer is disposed on the first surface, spaced apart from the first electrode layer, and close to the first end.
  • One end of the fourth control circuit is connected to the end of the second electrode layer away from the first end, and the other end of the fourth control circuit is connected to the end of the first electrode layer away from the second end.
  • the fourth control circuit is used for controlling the first electrode layer and the second electrode layer to be disconnected in a radio frequency transmitting stage, and connected in a radio frequency receiving stage.
  • the second electrode layer and the first electrode layer can be used as transmission lines of the magnetic field enhancement component.
  • the fourth control circuit controls the connection or disconnection of the second electrode layer and the first electrode layer.
  • the magnetic field enhancement component introduces a nonlinear control structure through the fourth control circuit, so that the resonant circuit formed by a plurality of the magnetic field enhancement components also has nonlinear response characteristics, which can be applied to all applications including fast spin echo sequences. Clinical sequence.
  • the resonance generated by the structure formed by the plurality of said magnetic field enhancing components is an LC resonance. In LC resonance, the inductance originates from the transmission line itself formed by the first electrode layer and the second electrode layer, which can be equivalent to an inductance and a resistance.
  • the capacitance in LC resonance comes from the structural capacitance formed between any two electrode layers and the dielectric.
  • the fourth control circuit controls the first electrode layer to be disconnected from the second electrode layer.
  • the resonant circuit formed by the plurality of magnetic field enhancement components is in a disconnected state, showing a detuned state.
  • there is no induced current in the resonant circuit formed by the plurality of magnetic field enhancement components so that no induced magnetic field that interferes with the radio frequency is generated, and the influence of the magnetic field enhancement components on the radio frequency transmission stage is eliminated.
  • the fourth control circuit controls the connection between the first electrode layer and the second electrode layer.
  • the resonant circuits formed by the plurality of the magnetic field enhancement components are in a connected state and can exhibit a resonant state, thereby greatly enhancing the signal field.
  • the first electrode layer and the second electrode layer are controlled to be disconnected in the radio frequency transmitting stage and connected in the radio frequency receiving stage, so that the magnetic field enhancement component can only enhance the radio frequency receiving field, and will not affect the radio frequency receiving field.
  • the RF transmission field is enhanced to improve the image signal-to-noise ratio.
  • FIG. 1 is a side view of a magnetic field enhancement assembly in an embodiment provided by the present application.
  • FIG. 2 is a side view of a magnetic field enhancement assembly in an embodiment provided by the present application.
  • FIG. 3 is a side view of a magnetic field enhancement assembly in an embodiment provided by the present application.
  • FIG. 4 is a schematic structural diagram of the magnetic field enhancement component in the embodiment of FIG. 3 provided by the present application.
  • FIG. 5 is a top view of the magnetic field enhancement assembly in the embodiment of FIG. 3 provided by the present application.
  • FIG. 6 is a schematic structural diagram of the overlapping portion of the first electrode layer and the third electrode layer in an embodiment provided by the present application;
  • FIG. 7 is a schematic structural diagram of the overlapping portion of the first electrode layer and the third electrode layer in an embodiment provided by the present application;
  • FIG. 8 is a side view of a magnetic field enhancement assembly in an embodiment provided by the present application.
  • FIG. 9 is a side view of a magnetic field enhancement assembly in an embodiment provided by the present application.
  • FIG. 10 is a schematic diagram of the overall structure of the magnetic field enhancement device provided by the application.
  • FIG. 11 is a schematic diagram of an explosion structure of a magnetic field enhancement device provided by the application.
  • Figure 12 shows the resonance performance of the magnetic field enhancement device in the RF transmit stage and the RF receive stage.
  • the magnetic field enhancement component 10 includes a first dielectric layer 100 , a first electrode layer 110 , a second electrode layer 120 and a fourth control circuit 600 .
  • the first dielectric layer 100 has a first surface 101 .
  • the first dielectric layer 100 has a first end 103 and a second end 104 disposed opposite to each other.
  • the first electrode layer 110 is disposed on the first surface 101 .
  • the first electrode layer 110 is disposed close to the second end 104 .
  • the second electrode layer 120 is disposed on the first surface 101 .
  • the second electrode layer 120 is spaced apart from the first electrode layer 110 .
  • the second electrode layer 120 is disposed close to the first end 103 .
  • One end of the fourth control circuit 600 is connected to the end of the second electrode layer 120 away from the first end 103 .
  • the other end of the fourth control circuit 600 is connected to the end of the first electrode layer 110 away from the second end 104 .
  • the fourth control circuit 600 is used for controlling the first electrode layer 110 and the second electrode layer 120 to be disconnected in the RF transmission stage and connected in the RF reception stage.
  • the second electrode layer 120 and the first electrode layer 110 may serve as transmission lines of the magnetic field enhancement component 10 .
  • the fourth control circuit 600 controls the connection or disconnection of the second electrode layer 120 and the first electrode layer 110 .
  • the magnetic field enhancement component 10 introduces a nonlinear control structure through the fourth control circuit 600, so that the resonant circuit formed by a plurality of the magnetic field enhancement components 10 also has nonlinear response characteristics, which can be suitable for applications including fast spin echo sequences in All clinical sequences within.
  • the resonance generated by the structure formed by a plurality of the magnetic field enhancing components 10 is an LC resonance.
  • the inductance originates from the transmission line formed by the first electrode layer 110 and the second electrode layer 120, and can be equivalent to an inductance and a resistance.
  • the capacitance in LC resonance comes from the structural capacitance formed between any two electrode layers and the dielectric.
  • the fourth control circuit 600 controls the first electrode layer 110 to be disconnected from the second electrode layer 120 .
  • the resonant circuits formed by the plurality of the magnetic field enhancement components 10 are in a disconnected state, showing a detuned state.
  • there is no induced current in the resonant circuit formed by the plurality of magnetic field enhancement components 10 and thus no induced magnetic field that may interfere with the radio frequency is generated, thereby eliminating the influence of the magnetic field enhancement components 10 on the radio frequency transmission stage.
  • the fourth control circuit 600 controls the connection between the first electrode layer 110 and the second electrode layer 120 .
  • the resonant circuits formed by the plurality of the magnetic field enhancement components 10 are in a connected state and can exhibit a resonant state, thereby greatly enhancing the signal field.
  • the fourth control circuit 600 is used to control the first electrode layer 110 and the second electrode layer 120 to be disconnected in the RF transmission stage and connected in the RF reception stage, so that the magnetic field enhancement component 10 can only enhance the RF reception field , the radio frequency emission field will not be enhanced, and the image signal-to-noise ratio is improved.
  • the magnetic field enhancement component 10 is a non-linear response MRI image enhancement metasurface device based on a MOS tube.
  • the non-linear response MRI image enhancement metasurface device based on MOS tube controls the first electrode layer 110 and the second electrode layer 120 to be disconnected in the radio frequency transmission stage through the fourth control circuit 600, and in the radio frequency receiving stage. Stage connection.
  • the first electrode layer 110 and the second electrode layer 120 are disconnected in the radio frequency transmitting stage, and connected in the radio frequency receiving stage, so that the magnetic field enhancement component 10 can only enhance the radio frequency receiving field, and will not enhance the radio frequency transmitting field .
  • the non-linear response MRI image enhancement metasurface device based on the MOS tube exhibits the characteristic of non-linear response, and does not enhance the radio frequency transmitting field and the radio frequency receiving field at the same time.
  • the fourth control circuit 600 includes a first depletion MOS transistor 231 and a second depletion MOS transistor 232 .
  • the source of the first depletion MOS transistor 231 is connected to the second electrode layer 120 .
  • the gate and drain of the first depletion MOS transistor 231 are connected.
  • the gate and drain of the second depletion MOS transistor 232 are connected.
  • the gate and drain of the second depletion MOS transistor 232 are connected to the gate and drain of the first depletion MOS transistor 231 .
  • the source of the second depletion MOS transistor 232 is connected to the first electrode layer 110 .
  • the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are connected in reverse series, which can control the radio frequency between the first electrode layer 110 and the second electrode layer 120 Disconnect during the transmit phase and connect during the RF receive phase.
  • the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are connected in reverse series to ensure that the first depletion MOS transistor 231 and the second depletion MOS transistor 231 and the second depletion are in the radio frequency emission stage.
  • One of the MOS transistors 232 is turned off, so that the first electrode layer 110 and the second electrode layer 120 are disconnected and not connected.
  • the first depletion-mode MOS transistor 231 and the second depletion-mode MOS transistor 232 have the characteristics of low-voltage on and high-voltage off.
  • the pinch-off voltage of the first depletion-mode MOS transistor 231 and the second depletion-mode MOS transistor 232 at room temperature is about 1V, and the disconnection time and recovery time are both on the order of nanoseconds.
  • the radio frequency transmitting stage and the radio frequency receiving stage differs by 3 orders of magnitude.
  • the induced voltage in the coil of the RF transmission stage is between several V and several hundreds of V, and the specific value is related to the selected sequence and flip angle.
  • the induced voltage is relatively large, the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are disconnected, and the resonant circuit formed by the plurality of magnetic field enhancement components 10 is disconnected On state, showing a detuned state.
  • there is no current in the magnetic field enhancement component 10 and no induced magnetic field that may interfere with radio frequency is generated.
  • the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are turned on, and the resonant circuit formed by the plurality of magnetic field enhancement components 10 is in a connected state and can exhibit a resonant state.
  • the signal field is greatly enhanced, and the signal-to-noise ratio of the image is enhanced.
  • Materials of the first electrode layer 110 , the second electrode layer 120 , the third electrode layer 130 and the fourth electrode layer 140 may be non-magnetic metals such as copper, silver, and gold.
  • the material of the first dielectric layer 100 may be a material with a flame-retardant material grade of FR4, a high-temperature-resistant thermoplastic resin such as polyphenylene oxide (PPE), or a Rogers 4003C material.
  • the first electrode layer 110 , the second electrode layer 120 , the third electrode layer 130 and the fourth electrode layer 140 are made of the same material, which are copper foils.
  • the width of the first dielectric layer 10 is 15 mm, the thickness is 0.51 mm, and the length is 250 mm.
  • the fourth control circuit 600 further includes a third depletion MOS transistor 233 and a fourth depletion MOS transistor 234 .
  • the source of the third depletion MOS transistor 233 is connected to the source of the first depletion MOS transistor 231 .
  • the gate and drain of the third depletion MOS transistor 233 are connected.
  • the gate and drain of the fourth depletion MOS transistor 234 are connected.
  • the gate and drain of the fourth depletion MOS transistor 234 are connected to the gate and drain of the third depletion MOS transistor 233 .
  • the source of the fourth depletion MOS transistor 234 is connected to the source of the second depletion MOS transistor 232 .
  • the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are turned on, which are equivalent to a resistance.
  • the third depletion mode MOS transistor 233 and the fourth depletion mode MOS transistor 234 are turned on, which are equivalent to a resistance.
  • the first depletion MOS transistor 231 and the second depletion MOS transistor 232 are connected in reverse series.
  • the third depletion MOS transistor 233 is connected in reverse series with the fourth depletion MOS transistor 234 and is connected in parallel with the first depletion MOS transistor 231 and the second depletion MOS transistor 232 connect.
  • two resistors are connected in parallel between the second electrode layer 120 and the first electrode layer 110, so that the overall resistance value is reduced, which is more conducive to the formation of a uniform magnetic field by the magnetic field enhancement component 10 , which improves the quality of MRI images.
  • the second electrode layer 120 and the first electrode layer 110 are symmetrically arranged with respect to the fourth control circuit 600 . That is, the lengths of the second electrode layer 120 and the first electrode layer 110 are the same.
  • the fourth control circuit 600 is disposed in the middle of the first dielectric layer 100 .
  • the second electrode layer 120 and the first electrode layer 110 can be equivalent to an inductance, and the magnetic field strength is relatively large.
  • the second electrode layer 120 and the first electrode layer 110 are distributed on both sides of the fourth control circuit 600 , so that the structure of the magnetic field enhancement component 10 is symmetrical.
  • the structure of the magnetic field enhancement assembly 10 is symmetrical, so that the distribution of the magnetic field enhanced by the magnetic field enhancement assembly 10 presents symmetry.
  • the fourth control circuit 600 controls the connection between the first electrode layer 110 and the second electrode layer 120, so that the distribution of the magnetic field enhanced by the magnetic field enhancement component 10 is more uniform, and the quality of the MRI image is improved .
  • the first dielectric layer 100 further includes a second surface 102 .
  • the second surface 102 is disposed opposite to the first surface 101 .
  • the magnetic field enhancement component 10 further includes a third electrode layer 130 and a fourth electrode layer 140 .
  • the third electrode layer 130 is disposed on the second surface 102 .
  • the third electrode layer 130 covers part of the second surface 102 .
  • the third electrode layer 130 is disposed close to the second end 104 .
  • the fourth electrode layer 140 is disposed on the second surface 102 .
  • the fourth electrode layer 140 covers part of the second surface 102 .
  • the fourth electrode layer 140 is disposed close to the first end 103 .
  • the orthographic projection of the third electrode layer 130 on the first dielectric layer 100 overlaps with the orthographic projection of the first electrode layer 110 on the first dielectric layer 100 to form a second structural capacitor 302 .
  • the first electrode layer 110 , the first dielectric layer 100 and the third electrode layer 130 form the second structural capacitor 302 .
  • the orthographic projection of the fourth electrode layer 140 on the first dielectric layer 100 overlaps with the orthographic projection of the second electrode layer 120 on the first dielectric layer 100 to form a third structural capacitor 303 .
  • the second electrode layer 120 , the first dielectric layer 100 and the fourth electrode layer 140 form the third structure capacitor 303 .
  • the second electrode layer 120 between the third structure capacitor 303 and the fourth control circuit 600 may form a first transmission line.
  • the first electrode layer 110 between the fourth control circuit 600 and the second structure capacitor 302 may form a second transmission line.
  • the third structure capacitor 303 , the fourth control circuit 600 and the second structure capacitor 302 are connected in series through the first transmission line and the second transmission line. Therefore, by connecting the third structural capacitor 303 , the fourth control circuit 600 and the second structural capacitor 302 in series, the resonant frequency of the resonant circuit formed by the plurality of magnetic field enhancement components 10 can be adjusted to shorten the The adjustment time of a plurality of the magnetic field enhancement assemblies 10 after being placed in the magnetic resonance imaging system is determined.
  • the magnetic field enhancement component 10 will generate an induced voltage in a magnetic field environment.
  • Parasitic capacitance may be formed in the transmission line portion formed by the first electrode layer 110 and the second electrode layer 120 .
  • the parasitic capacitance is in a parallel relationship with the second structure capacitance 302 and the third structure capacitance 303 .
  • the third structure capacitor 303 and the second structure capacitor 302 form a structure in which capacitors are connected in series, and the induced voltage is divided into a plurality of parts, thereby reducing the third structure capacitor 303 and the second structure capacitor The voltage divider of capacitor 302 .
  • the third structural capacitor 303 and the second structural capacitor 302 form a capacitor series structure, which can reduce the voltage on the parasitic capacitor.
  • the voltage on the parasitic capacitance is reduced, reducing the damage of the parasitic capacitance, thereby reducing the loading effect.
  • the load effect of the magnetic field enhancement assembly 10 is reduced, so that the resonant frequency of the resonant circuit formed by the magnetic field enhancement assemblies 10 is not easily affected by the object to be measured, and the enhancement performance of the magnetic field enhancement assembly 10 is improved. stability of the resonant frequency.
  • the overlapped length is related to the overlapped area.
  • Both the third structure capacitor 303 and the second structure capacitor 302 have respective facing areas. By adjusting the size of the facing area, the capacitance value of the structural capacitance can be adjusted, so that the resonant circuit formed by the plurality of the magnetic field enhancement components 10 has the same operating frequency as the MRI system.
  • the resonant frequency of the resonant circuit formed by the plurality of magnetic field enhancement components 10 is determined by the following formula Wherein, L and C are respectively the equivalent inductance and equivalent capacitance in the resonant circuit formed by the plurality of magnetic field enhancement components 10 .
  • the value of the equivalent capacitance is determined by the structural capacitance Cs of each cell.
  • the relationship between the structural capacitance Cs and the area S facing the two electrode plates is: Wherein, ⁇ 0 is the vacuum permittivity, and ⁇ is the relative permittivity of the first dielectric layer 100 .
  • d is the distance between the two electrode plates (or the thickness of the first dielectric layer 100 ). Therefore, by adjusting the facing area, the resonant circuit formed by a plurality of the magnetic field enhancement components 10 can have the target resonant frequency, that is, the same operating frequency as that of the MRI system.
  • the overlapping length of the second electrode layer 120 and the fourth electrode layer 140 is 35 mm.
  • the overlapping length of the first electrode layer 110 and the third electrode layer 130 is 35 mm.
  • the length of the second electrode layer 120 between the third structure capacitor 303 and the fourth control circuit 600 and the distance between the second structure capacitor 302 and the fourth control circuit 600 are the same. That is, in the direction from the first end 103 to the second end 104, the lengths of the first transmission line and the second transmission line are the same.
  • the second electrode layer 120 between the third structure capacitor 303 and the fourth control circuit 600 may form the first transmission line.
  • the first electrode layer 110 between the second structural capacitor 302 and the fourth control circuit 600 may form the second transmission line.
  • the first transmission line and the second transmission line may be equivalent to an inductance and a resistance.
  • the effective magnetic field is distributed between the third structure capacitor 303 and the fourth control circuit 600 and between the second structure capacitor 302 and the fourth control circuit 600 . That is, an effective magnetic field is distributed between the first transmission line and the second transmission line.
  • the effective magnetic field between the second structural capacitor 302 and the fourth control circuit 600 forms a first detection area.
  • the effective magnetic field between the third structural capacitor 303 and the fourth control circuit 600 forms a second detection area.
  • the first detection area is the same as the second detection area.
  • the area where the effective magnetic field is formed is used as the detection area, and the detection part is detected.
  • the magnetic field enhancement assembly 10 forms two identical detection areas on the left and right sides of the fourth control circuit 600 , which is more conducive to the magnetic field enhancement assembly 10 to form a uniform magnetic field and improves the MRI image quality.
  • the width of the second electrode layer 120 between the third structure capacitor 303 and the fourth control circuit 600 is smaller than the width of the corresponding third structure capacitor 303
  • the width of the second electrode layer 120 is smaller than the width of the first electrode layer 110 corresponding to the second structure capacitor 302 . That is, the width of the first transmission line in the direction perpendicular to the first end 103 to the second end 104 is smaller than the width of the second electrode layer 120 corresponding to the third structure capacitor 303 .
  • the width of the second transmission line is smaller than the width of the first electrode layer 110 corresponding to the second structure capacitor 302 .
  • the third structure capacitor 303 is connected to the fourth control circuit 600 through the first transmission line.
  • the second structure capacitor 302 is connected to the fourth control circuit 600 through the second transmission line.
  • stray capacitance will be formed between the electrode layers corresponding to the transmission lines and the electrode layers disposed opposite each other.
  • the width of the second electrode layer 120 between the third structure capacitor 303 and the fourth control circuit 600 is reduced, which will reduce the width of the first transmission line, thereby reducing the distance between the electrode layer and the electrode layer. When they are relative to each other, the area becomes smaller.
  • the width of the first electrode layer 110 between the second structural capacitor 302 and the fourth control circuit 600 is reduced, which will reduce the width of the second transmission line, thereby reducing the distance between the electrode layer and the electrode layer. The relative area between them becomes smaller.
  • the width of the first transmission line is smaller than the width of the second electrode layer 120 corresponding to the third structure capacitor 303 , which not only ensures that the third structure capacitor 303 can fully utilize the area of the second electrode layer 120 to form a structure capacitance, and reduce stray capacitance.
  • the width of the second transmission line is smaller than the width of the first electrode layer 110 corresponding to the second structure capacitor 302 , which not only ensures that the second structure capacitor 302 can fully utilize the area of the first electrode layer 110 to form a structure capacitance, and reduce stray capacitance. Therefore, without affecting the formation of the first structure capacitor 301 and the second structure capacitor 302, and without affecting the connection between the two, the stray capacitance is reduced, which is more conducive to the uniform distribution of the magnetic field and improves the MRI image. quality.
  • the first electrode layer 110 corresponding to the second structure capacitor 302 is provided with a first opening 401 .
  • the third electrode layer 130 corresponding to the second structure capacitor 302 is provided with a second opening 402 .
  • the orthographic projections of the first opening 401 and the second opening 402 on the first dielectric layer 100 are coincident. That is, the first opening 401 and the second opening 402 are disposed on opposite surfaces of the first dielectric layer 100 .
  • the first electrode layer 110 corresponding to the second structure capacitor 302 is provided with a third opening 403 .
  • the third opening 403 is spaced apart from the first opening 401 .
  • the third electrode layer 130 corresponding to the second structure capacitor 302 is provided with a fourth opening 404 .
  • the fourth opening 404 is spaced apart from the second opening 402.
  • the orthographic projections of the third opening 403 and the fourth opening 404 on the first dielectric layer 100 are coincident.
  • the orthographic projections of the first opening 401 and the second opening 402 on the first dielectric layer 100 are coincident.
  • the overlapping portion of the orthographic projection forms a comb-shaped shape with two openings, which can be further optimized.
  • the local magnetic field distribution improves the detection effect of the specific position of the detection part.
  • the structure of the second electrode layer 120 corresponding to the third structural capacitor 303 is the same as the structure of the first electrode layer 110 corresponding to the second structural capacitor 302 .
  • the fourth electrode layer 140 corresponding to the third structural capacitor 303 and the third electrode layer 130 corresponding to the second structural capacitor 302 have the same structure.
  • the structure of the third structure capacitor 303 is the same as that of the second structure capacitor 302, forming a symmetrical structure.
  • the magnetic field enhancement component 10 further includes a fifth electrode layer 141 and a fifth control circuit 610 .
  • the fifth electrode layer 141 and the first electrode layer 110 are disposed on the first surface 101 at intervals.
  • the fifth electrode layer 141 is disposed between the first electrode layer 110 and the second electrode layer 120 .
  • One end of the fourth control circuit 600 is connected to one end of the second electrode layer 120 .
  • the other end of the fourth control circuit 600 is connected to one end of the fifth electrode layer 141 .
  • One end of the fifth control circuit 610 is connected to the other end of the fifth electrode layer 141 .
  • the other end of the fifth control circuit 610 is connected to one end of the first electrode layer 110 .
  • the fifth control circuit 610 is the same as the fourth control circuit 600 , and includes the first depletion MOS transistor 231 and the second depletion MOS transistor 232 connected in series in reverse. Through the fifth control circuit 610 and the fourth control circuit 600, the first electrode layer 110, the fifth electrode layer 141 and the second electrode layer 120 are controlled to be disconnected during the radio frequency emission stage, and the RF receive stage connection.
  • the magnetic field enhancement component 10 further includes a fifth electrode layer 141 , a sixth control circuit 620 and a sixth electrode layer 121 .
  • the fifth electrode layer 141 and the first electrode layer 110 are disposed on the first surface 101 at intervals.
  • the fifth electrode layer 141 is disposed between the first electrode layer 110 and the second electrode layer 120 .
  • One end of the fourth control circuit 600 is connected to the other end of the fifth electrode layer 141 .
  • the other end of the fourth control circuit 600 is connected to one end of the first electrode layer 110 .
  • One end of the sixth control circuit 620 is connected to one end of the fourth electrode layer 140 .
  • the sixth electrode layer 121 and the third electrode layer 130 are disposed on the second surface 102 at intervals.
  • the sixth electrode layer 121 is disposed between the fourth electrode layer 140 and the third electrode layer 130 .
  • the other end of the sixth control circuit 620 is connected to one end of the sixth electrode layer 121 .
  • the orthographic projection of the sixth electrode layer 121 on the first dielectric layer 100 overlaps with the orthographic projection of the fifth electrode layer 141 on the first dielectric layer 100 to form a first structural capacitor 301 .
  • the sixth control circuit 620 is the same as the fourth control circuit 600 , including the first depletion MOS transistor 231 and the second depletion MOS transistor 232 connected in series in reverse.
  • the sixth control circuit 620 and the fourth control circuit 600 jointly control the first electrode layer 110 , the fifth electrode layer 141 , the sixth electrode layer 121 and the fourth electrode layer 140
  • the RF transmit phase is disconnected and the RF receive phase is connected.
  • the fourth electrode layer 140 between the third structure capacitor 303 and the sixth control circuit 620 forms a third transmission line.
  • the sixth electrode layer 121 between the sixth control circuit 620 and the first structure capacitor 301 forms a fourth transmission line.
  • the fifth electrode layer 141 between the first structure capacitor 301 and the fourth control circuit 600 forms a fifth transmission line.
  • the first electrode layer 110 between the fourth control circuit 600 and the second structure capacitor 302 forms a sixth transmission line.
  • the magnetic field enhancement assembly 10 includes a plurality of structural capacitors connected in series.
  • the third structure capacitor 303, the first structure capacitor 301 and the second structure capacitor 302 form a structure in which capacitors are connected in series, and the induced voltage is divided into multiple pieces, reducing the size of the third structure
  • the voltage divider of the capacitor 303 , the first structure capacitor 301 and the second structure capacitor 302 is a structure in which capacitors are connected in series, and the induced voltage is divided into multiple pieces, reducing the size of the third structure.
  • the third structural capacitor 303 , the first structural capacitor 301 and the second structural capacitor 302 form a capacitor series structure, which reduces the voltage on the parasitic capacitor connected in parallel.
  • the voltage on the parasitic capacitance is reduced, reducing the harm of the parasitic capacitance, thereby reducing the load effect.
  • the load effect of the magnetic field enhancement assembly 10 is reduced, so that the resonant frequency of the resonant circuit formed by the magnetic field enhancement assemblies 10 is not easily affected by the object to be measured, thereby improving the enhancement performance of the magnetic field enhancement assembly 10. stability of the resonant frequency.
  • the present application provides a magnetic field enhancement device 20 .
  • the magnetic field enhancement device 20 includes a cylindrical support structure 50 , a plurality of magnetic field enhancement components 10 , a first annular conductive sheet 510 and a second annular conductive sheet 520 .
  • the cylindrical support structure 50 has two spaced opposite third ends 51 and fourth ends 53 .
  • the plurality of magnetic field enhancement components 10 are arranged on the cylindrical support structure 50 at intervals.
  • the plurality of magnetic field enhancement assemblies 10 extend along the third end 51 to the fourth end 53 .
  • the first annular conductive sheet 510 is disposed on the cylindrical support structure 50 .
  • the first annular conductive sheet 510 is close to the third end 51 .
  • the first annular conductive sheet 510 is connected to the second electrode layer 120 of each of the magnetic field enhancement components 10 .
  • the second annular conductive sheet 520 is disposed on the cylindrical support structure 50 .
  • the second annular conductive sheet 520 is close to the fourth end 53 .
  • the second annular conductive sheet 520 is connected to the first electrode layer 110 of each of the magnetic field enhancement components 10 .
  • the first annular conductive sheet 510 is connected to the second electrode layer 120 of each of the magnetic field enhancement components 10 .
  • the second annular conductive sheet 520 is connected to the first electrode layer 110 of each of the magnetic field enhancement components 10 .
  • the materials of the first annular conductive sheet 510 and the second annular conductive sheet 520 may be made of metal materials such as gold, silver, and copper.
  • the first annular conductive sheet 510 is connected to the fourth electrode layer 140 of each of the magnetic field enhancement components 10 .
  • the second annular conductive sheet 520 is connected to the third electrode layer 130 of each of the magnetic field enhancement components 10 .
  • the cylindrical support structure 50 has inner and outer surfaces spaced relative to each other.
  • the inner surface of the cylindrical support structure 50 may enclose a detection space 509 .
  • the detection space 509 can be used to accommodate the detection site.
  • the detection site may be an arm, a leg, an abdomen, or the like.
  • the distances between the plurality of magnetic field enhancement components 10 are equal to improve the uniformity of the local magnetic field.
  • a plurality of the magnetic field enhancement components 10 may be arranged on the outer surface of the cylindrical support structure 50 at equal intervals.
  • the first annular conductive sheet 510 and the second annular conductive sheet 520 are respectively disposed at opposite ends of the cylindrical support structure 50 and disposed around the axis 504 of the cylindrical support structure 50 .
  • each of the magnetic field enhancement components 10 Two ends of each of the magnetic field enhancement components 10 are respectively connected to the first annular conductive sheet 510 and the second annular conductive sheet 520 .
  • the plurality of magnetic field enhancement components 10 are connected through the first annular conductive sheet 510 and the second annular conductive sheet 520 .
  • the first annular conductive sheet 510 and the second annular conductive sheet 520 are connected end to end, respectively, so that the entire structure of the magnetic field enhancement device 20 is isotropic, and the magnetic field uniformity is improved.
  • the first annular conductive sheet 510 and the second annular conductive sheet 520 may be respectively disposed around the axis 504 of the cylindrical support structure 50 , that is, the first annular conductive sheet 510 and the second annular conductive sheet 520 All are cyclic structures.
  • a plurality of limiting structures 530 are spaced around the outer surface of the cylindrical support structure 50 .
  • each of the magnetic field enhancing components 10 corresponds to the limiting structure 530 of the third end 51 and the fourth end 53 respectively.
  • the limiting structure 530 One of the magnetic field enhancement components 10 is fixed through the limiting structures 530 at both ends of the third end 51 and the fourth end 53 , and then the magnetic field enhancement component 10 is fixed on the cylindrical support structure 50 .
  • the limiting structure 530 may be a through groove.
  • the through slot can be used to insert the magnetic field enhancement assembly 10 .
  • the two through grooves respectively confine the two ends of the magnetic field enhancement assembly 10 .
  • the magnetic field enhancement assembly 10 can be fixed on the outer surface of the cylindrical support structure 50 through the limiting structure 530 .
  • the magnetic field enhancement device 20 may include 12 pieces of the magnetic field enhancement components 10 , which are arranged on the outer surface of the cylindrical support structure 50 at equal intervals around the axis 504 .
  • FIG. 12 shows the resonance performance of the magnetic field enhancement device 20 in the radio frequency transmitting stage and the radio frequency receiving stage. It can be seen from FIG. 12 that the magnetic field enhancement device 20 has a good resonance frequency in the radio frequency receiving stage, which can greatly enhance the radio frequency receiving field and improve the image signal-to-noise ratio.
  • the magnetic field enhancement assembly 10 is disconnected by the fourth control circuit 600 , so that the resonance circuit formed by the plurality of the magnetic field enhancement assemblies 10 is disconnected.
  • the magnetic field enhancement device 20 does not have resonance performance, and has no current, so no magnetic field is induced, which ensures that the radio frequency magnetic field strength after the magnetic field enhancement device 20 is added is the same as before the addition.
  • the fourth control circuit 600 is used to control the first electrode layer 110 and the second electrode layer 120 to be disconnected in the radio frequency transmitting stage and connected in the radio frequency receiving stage, so that the magnetic field enhancement component 10 can only enhance the radio frequency The receiving field will not enhance the radio frequency transmitting field, which improves the image signal-to-noise ratio.

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Abstract

一种磁场增强组件以及磁场增强器件，磁场增强组件包括第一电介质层（100）、第一电极层（110）、第二电极层（120）以及第四控制电路（600）；第一电介质层（100）具有第一表面（101），第一电介质层（100）具有相对设置的第一端（103）与第二端（104）；第一电极层（110）设置于第一表面（101），且靠近第二端（104）设置；第二电极层（120）设置于第一表面（101），并与第一电极层（110）间隔设置，且靠近第一端（103）设置；第四控制电路（600）的一端与第二电极层（120）远离第一端（103）的一端连接，第四控制电路（600）的另一端与第一电极层（110）远离第二端（104）的一端连接，第四控制电路（600）用于控制第一电极层（110）与第二电极层（120）在射频发射阶段断开，且在射频接收阶段连接。

Description

基于MOS管的非线性响应MRI图像增强超构表面器件
相关申请
本申请要求2021年02月10日申请的，申请号为202110183925.4，名称为“基于MOS管的非线性响应MRI图像增强超构表面器件”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及磁共振成像技术领域，特别是涉及一种磁场增强组件以及磁场增强器件。
背景技术
MRI(Magnetic Resonance Imaging，核磁共振成像技术)为非介入探测方式，是医药、生物、神经科学领域的一项重要的基础诊断技术。传统MRI设备传输的信号强度主要取决于静磁场B0的强度，采用高磁场甚至超高磁场系统可以提高图像的信噪比、分辨率和缩短扫描时间。但是，静磁场强度的增加会带来如下三个问题：1)射频(RF)场非均匀性增大，调谐难度增加；2)人体组织产热增加，带来安全隐患，患者还容易出现眩晕和呕吐等不良反应：3)购置成本大幅度增加，对大多数小规模医院来说是一种负担。因此，如何采用尽量小的静磁场强度同时能够获得高的成像质量成为MRI技术中一个至关重要的问题。
其中，通过在MRI中引入具有高介电常数的板或柱状的介电谐振子来提高射频磁场的强度和降低比吸收率，从而达到提高成像分辨率和减小信噪比的效果，是一种能有效提高MRI特征的新趋势。超构材料的出现为MRI成像质量和效率的提高，提供了一种新颖的更有效的方法。超构材料具有许多天然材料所不具备的特殊性质。通过电磁波与超构材料的金属或电介质基元间的相互作用及基元间的耦合效应，可以实现对电磁波传播路径与电磁场场强分布的控制。其中，具体工作原理是利用超构材料形成的结构中的电磁谐振，实现呈各向异性和梯度分布等电磁参数的调节。并且，通过对超构材料的几何尺寸、形状和介电常数等参数的设计，能够实现对不同频点的谐振增强。
在核磁共振系统中，存在两个射频阶段：射频发射阶段和射频接收阶段。射频发射阶段和射频接收阶段的射频场具有相同的谐振频率。因此，超构材料形成的结构，在增强射频接收场的同时，还会大幅度增加射频发射场。此时，射频发射场被增强之后，会降低MRI图像质量。然而，传统的磁场增强组件包括电介质板和分别位于电介质板正面和背面的第一电极和第二电极。第二电极在电介质板上的正投影位于第一电极在电介质板上正投影的两端，以构成平行板电容器。此时，传统的磁场增强组件的结构只具有频率选择性，使得磁场增强组 件呈现线性响应的特性，会同时增强射频发射场和射频接收场，导致MRI图像质量降低。
申请内容
有鉴于此，本申请提供一种磁场增强组件以及磁场增强器件。
本申请提供一种磁场增强组件。所述磁场增强组件包括第一电介质层、第一电极层、第二电极层以及第四控制电路。所述第一电介质层具有第一表面。所述第一电介质层具有相对设置的第一端与第二端。第一电极层设置于所述第一表面，且靠近所述第二端设置。第二电极层设置于所述第一表面，并与所述第一电极层间隔设置，且靠近所述第一端设置。所述第四控制电路的一端与所述第二电极层远离所述第一端的一端连接，所述第四控制电路的另一端与所述第一电极层远离所述第二端的一端连接。所述第四控制电路用于控制所述第一电极层与所述第二电极层在射频发射阶段断开，且在射频接收阶段连接。
上述磁场增强组件以及磁场增强器件，所述第二电极层与所述第一电极层可以作为所述磁场增强组件的传输线。所述第四控制电路控制所述第二电极层和所述第一电极层的连接或断开。所述磁场增强组件通过所述第四控制电路引入非线性控制结构，使得多个所述磁场增强组件形成的谐振回路也具有非线性响应特性，能够适用于包括快速自旋回波序列在内的所有临床序列。多个所述磁场增强组件形成的结构发生的谐振是LC谐振。LC谐振中，电感来源于所述第一电极层与所述第二电极层形成的传输线本身，可以等效为一个电感和电阻。LC谐振中电容来源于任意两个电极层和电介质之间形成的结构电容。
在射频发射阶段，所述第四控制电路控制所述第一电极层与所述第二电极层断开。多个所述磁场增强组件形成的谐振回路处于断开状态，呈现失谐状态。并且，多个所述磁场增强组件形成的谐振回路中不会存在感应电流，进而不会产生会干扰射频的感应磁场，消除了所述磁场增强组件对射频发射阶段的影响。
在射频接收阶段，所述第四控制电路控制所述第一电极层与所述第二电极层连接。多个所述磁场增强组件形成的谐振回路处于连接状态，能够呈现谐振状态，大幅度增强信号场。通过所述第四控制电路控制所述第一电极层与所述第二电极层在射频发射阶段断开，在射频接收阶段连接，使得所述磁场增强组件只能增强射频接收场，不会对射频发射场进行增强，提高了图像信噪比。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。
图1为本申请提供的一个实施例中磁场增强组件的侧视图；
图2为本申请提供的一个实施例中磁场增强组件的侧视图；
图3为本申请提供的一个实施例中磁场增强组件的侧视图；
图4为本申请提供的图3实施例中磁场增强组件的结构示意图；
图5为本申请提供的图3实施例中磁场增强组件的俯视图；
图6为本申请提供的一个实施例中第一电极层与第三电极层的重叠部分的结构示意图；
图7为本申请提供的一个实施例中第一电极层与第三电极层的重叠部分的结构示意图；
图8为本申请提供的一个实施例中磁场增强组件的侧视图；
图9为本申请提供的一个实施例中磁场增强组件的侧视图；
图10为本申请提供的磁场增强器件的整体结构示意图；
图11为本申请提供的磁场增强器件的爆炸结构示意图；
图12为磁场增强器件在射频发射阶段和射频接收阶段的谐振性能。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
为了使本申请的目的、技术方案及优点更加清楚明白，以下通过实施例，并结合附图，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
请参见图1，本申请提供一种磁场增强组件10。所述磁场增强组件10包括第一电介质层100、第一电极层110、第二电极层120以及第四控制电路600。所述第一电介质层100具有第一表面101。所述第一电介质层100具有相对设置的第一端103与第二端104。所述第一电极层110设置于所述第一表面101。所述第一电极层110靠近所述第二端104设置。所述第二电极层120设置于所述第一表面101。所述第二电极层120与所述第一电极层110间隔设置。所述第二电极层120靠近所述第一端103设置。
所述第四控制电路600的一端与所述第二电极层120远离所述第一端103的一端连接。所述第四控制电路600的另一端与所述第一电极层110远离所述第二端104的一端连接。所述第四控制电路600用于控制所述第一电极层110与所述第二电极层120在射频发射阶段断开，且在射频接收阶段连接。
本实施例中，所述第二电极层120与所述第一电极层110可以作为所述磁场增强组件10的传输线。所述第四控制电路600控制所述第二电极层120和所述第一电极层110的连接或断开。所述磁场增强组件10通过所述第四控制电路600引入非线性控制结构，使得多个所述磁场增强组件10形成的谐振回路也具有非线性响应特性，能够适用于包括快速自旋回波序列 在内的所有临床序列。多个所述磁场增强组件10形成的结构发生的谐振是LC谐振。LC谐振中，电感来源于所述第一电极层110与所述第二电极层120形成的传输线本身，可以等效为一个电感和电阻。LC谐振中电容来源于任意两个电极层和电介质之间形成的结构电容。
在射频发射阶段，所述第四控制电路600控制所述第一电极层110与所述第二电极层120断开。多个所述磁场增强组件10形成的谐振回路处于断开状态，呈现失谐状态。并且，多个所述磁场增强组件10形成的谐振回路中不会存在感应电流，进而不会产生会干扰射频的感应磁场，消除了所述磁场增强组件10对射频发射阶段的影响。
在射频接收阶段，所述第四控制电路600控制所述第一电极层110与所述第二电极层120连接。多个所述磁场增强组件10形成的谐振回路处于连接状态，能够呈现谐振状态，大幅度增强信号场。通过所述第四控制电路600控制所述第一电极层110与所述第二电极层120在射频发射阶段断开，在射频接收阶段连接，使得所述磁场增强组件10只能增强射频接收场，不会对射频发射场进行增强，提高了图像信噪比。
所述磁场增强组件10为基于MOS管的非线性响应MRI图像增强超构表面器件。所述基于MOS管的非线性响应MRI图像增强超构表面器件通过所述第四控制电路600控制所述第一电极层110与所述第二电极层120在射频发射阶段断开，在射频接收阶段连接。所述第一电极层110与所述第二电极层120在射频发射阶段断开，在射频接收阶段连接，使得所述磁场增强组件10只能增强射频接收场，不会对射频发射场进行增强。所述基于MOS管的非线性响应MRI图像增强超构表面器件呈现非线性响应的特性，不会同时增强射频发射场和射频接收场。
在一个实施例中，所述第四控制电路600包括第一耗尽型MOS管231与第二耗尽型MOS管232。所述第一耗尽型MOS管231的源极与所述第二电极层120连接。所述第一耗尽型MOS管231的栅极和漏极连接。所述第二耗尽型MOS管232的栅极和漏极连接。所述第二耗尽型MOS管232的栅极和漏极与所述第一耗尽型MOS管231的栅极和漏极连接。所述第二耗尽型MOS管232的源极与所述第一电极层110连接。
本实施例中，所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接，能够控制所述第一电极层110与所述第二电极层120在射频发射阶段断开，且在射频接收阶段连接。通过所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接，可以适应于MRI设备中的交流环境。所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接，能够确保在射频发射阶段的所述第一耗尽型MOS管231和所述第二耗尽型MOS管232中有一个发生截止，使得所述第一电极层110与所述第二电极层120断开，不连接。
所述第一耗尽型MOS管231与所述第二耗尽型MOS管232具有低压导通，高压截止的特性。并且，所述第一耗尽型MOS管231与所述第二耗尽型MOS管232，在室温下的夹断 电压在1V左右，断开时间和恢复时间都在纳秒量级。
MRI设备中射频发射阶段和射频接收阶段在时间顺序上有几十毫秒到几千毫秒的差别，可以快速实现所述第一耗尽型MOS管231与所述第二耗尽型MOS管232的导通和断开。射频发射阶段和射频接收阶段的射频功率相差3个数量级。射频发射阶段线圈中的感应电压在几V到几百V之间，具体数值与所选的序列和翻转角有关。
在射频发射阶段，感应电压较大，所述第一耗尽型MOS管231与所述第二耗尽型MOS管232处于断开状态，多个所述磁场增强组件10形成的谐振回路处于断开状态，呈现失谐状态。并且，所述磁场增强组件10中不存在电流，不产生会干扰射频的感应磁场。在射频接收阶段，所述第一耗尽型MOS管231与所述第二耗尽型MOS管232导通，多个所述磁场增强组件10形成的谐振回路处于连接状态，能够呈现谐振状态，大幅度增强信号场，增强图像信噪比。
所述第一电极层110、所述第二电极层120、所述第三电极层130以及所述第四电极层140的材料可以为铜、银、金等无磁性金属。所述第一电介质层100的材料可以为耐燃材料等级为FR4的材料、聚亚苯基氧化物(PPE)等耐高温的热塑性树脂或者Rogers 4003C材料等。
在一个实施例中，所述第一电极层110、所述第二电极层120、所述第三电极层130以及所述第四电极层140的材料相同，均为铜箔。
在一个实施例中，所述第一电介质层10的宽度为15mm，厚度为0.51mm，长度250mm。
请参见图2，在一个实施例中，所述第四控制电路600还包括第三耗尽型MOS管233与第四耗尽型MOS管234。所述第三耗尽型MOS管233的源极与所述第一耗尽型MOS管231的源极连接。所述第三耗尽型MOS管233的栅极和漏极连接。所述第四耗尽型MOS管234的栅极和漏极连接。所述第四耗尽型MOS管234的栅极和漏极与所述第三耗尽型MOS管233的栅极和漏极连接。所述第四耗尽型MOS管234的源极与所述第二耗尽型MOS管232的源极连接。
本实施例中，在射频接收阶段，所述第一耗尽型MOS管231与所述第二耗尽型MOS管232导通，等效成电阻。所述第三耗尽型MOS管233与所述第四耗尽型MOS管234导通，等效成电阻。所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接。所述第三耗尽型MOS管233与所述第四耗尽型MOS管234反向串联连接，并与所述第一耗尽型MOS管231和所述第二耗尽型MOS管232并联连接。此时，在射频接收阶段，所述第二电极层120与所述第一电极层110之间，并联两个电阻，使得整体电阻值减小，更有利于所述磁场增强组件10形成均匀磁场，提高了MRI图像质量。
在一个实施例中，沿着由所述第一端103至所述第二端104的方向，所述第二电极层120和所述第一电极层110关于所述第四控制电路600对称设置。也就是，所述第二电极层120 和所述第一电极层110的长度相同。
本实施例中，所述第四控制电路600设置于所述第一电介质层100的中间位置。所述第二电极层120和所述第一电极层110可以等效为电感，磁场强度较大。所述第二电极层120和所述第一电极层110在所述第四控制电路600两侧分布，使得所述磁场增强组件10的结构对称。所述磁场增强组件10的结构对称，使得所述磁场增强组件10增强的磁场的分布呈现对称性。在射频接收阶段，所述第四控制电路600控制所述第一电极层110与所述第二电极层120连接，使得所述磁场增强组件10增强的磁场的分布更加均匀，提高了MRI图像质量。
请参见图3与图4，在一个实施例中，所述第一电介质层100还包括第二表面102。所述第二表面102与所述第一表面101相对设置。所述磁场增强组件10还包括第三电极层130与第四电极层140。所述第三电极层130设置于所述第二表面102。所述第三电极层130覆盖部分所述第二表面102。所述第三电极层130靠近所述第二端104设置。所述第四电极层140设置于所述第二表面102。所述第四电极层140覆盖部分所述第二表面102。所述第四电极层140靠近所述第一端103设置。
所述第三电极层130在所述第一电介质层100的正投影与所述第一电极层110在所述第一电介质层100的正投影部分重和，形成第二结构电容302。在重和部分，所述第一电极层110、所述第一电介质层100以及所述第三电极层130形成所述第二结构电容302。所述第四电极层140在所述第一电介质层100的正投影与所述第二电极层120在所述第一电介质层100的正投影部分重和，形成第三结构电容303。在重和部分，所述第二电极层120、所述第一电介质层100以及所述第四电极层140形成所述第三结构电容303。
所述第三结构电容303与所述第四控制电路600之间的所述第二电极层120可以形成第一传输线。所述第四控制电路600与所述第二结构电容302之间的所述第一电极层110可以形成第二传输线。所述第三结构电容303、所述第四控制电路600以及所述第二结构电容302通过第一传输线和第二传输线实现串联连接。因此，通过所述第三结构电容303、所述第四控制电路600以及所述第二结构电容302串联连接，可以对多个所述磁场增强组件10形成的谐振回路的谐振频率进行调节，缩短了多个所述磁场增强组件10在放入核磁共振成像系统之后的调节时间。
所述磁场增强组件10在磁场环境中会产生感应电压。所述第一电极层110和所述第二电极层120形成的传输线部分会形成寄生电容。寄生电容与所述第二结构电容302以及所述第三结构电容303之间是并联关系。在射频接收阶段，所述第三结构电容303和所述第二结构电容302形成电容串联的结构，将感应电压分为多个，减小了所述第三结构电容303和所述第二结构电容302的分压。
进一步，所述第三结构电容303和所述第二结构电容302形成电容串联的结构，可以降低寄生电容上的电压。寄生电容上的电压减小，降低了寄生电容的危害，从而减小了负载效 应。所述磁场增强组件10的负载效应减小，使得多个所述磁场增强组件10形成的谐振回路的谐振频率不容易受到受测物体的影响，提高了所述磁场增强组件10的增强性能，增强了谐振频率的稳定性。
在一个实施例中，在所述第三结构电容303对应的重和部分，重合长度与重合面积有关。所述第三结构电容303和所述第二结构电容302都具有各自的正对面积。通过调节正对面积的大小，可以调控结构电容的电容值，使得由多个所述磁场增强组件10形成的谐振回路与MRI系统具有相同的工作频率。
其中，多个所述磁场增强组件10形成的谐振回路的谐振频率由下式确定
Figure PCTCN2021113730-appb-000001
其中，L和C分别是多个所述磁场增强组件10形成的谐振回路中的等效电感和等效电容。等效电容的值由每个单元的结构电容Cs决定。结构电容Cs与两电极板正对面积S的关系为
Figure PCTCN2021113730-appb-000002
其中，ε 0为真空介电常数，ε为所述第一电介质层100的相对介电常数。d为两电极板板间的距离(或者是所述第一电介质层100的厚度)。所以，通过调节正对面积，可以使得多个所述磁场增强组件10形成的谐振回路具有目标谐振频率，也就是与MRI系统具有相同的工作频率。
在一个实施例中，在所述第三结构电容303对应的重和部分，所述第二电极层120和所述第四电极层140的重合长度为35mm。在所述第二结构电容302对应的重和部分，所述第一电极层110和所述第三电极层130的重合长度为35mm。
在一个实施例中，所述第三结构电容303与所述第四控制电路600之间的所述第二电极层120的长度和所述第二结构电容302与所述第四控制电路600之间的所述第一电极层110的长度相同。也就是，由所述第一端103至所述第二端104的方向上，所述第一传输线和所述第二传输线的长度相同。
本实施例中，所述第三结构电容303与所述第四控制电路600之间的所述第二电极层120可以形成所述第一传输线。所述第二结构电容302与所述第四控制电路600之间的所述第一电极层110可以形成所述第二传输线。所述第一传输线和所述第二传输线，可以等效为电感和电阻。此时，有效磁场分布在所述第三结构电容303与所述第四控制电路600之间以及所述第二结构电容302与所述第四控制电路600之间。也就是，有效磁场分布在所述第一传输线和所述第二传输线之间。所述第二结构电容302和所述第四控制电路600之间的有效磁场形成第一检测区域。所述第三结构电容303和所述所述第四控制电路600之间的有效磁场形成第二检测区域。第一检测区域与第二检测区域相同。有效磁场形成的区域作为检测区域，对检测部位进行检测。本实施例中所述磁场增强组件10在所述第四控制电路600左右两侧形成两个相同的检测区域，更有利于所述磁场增强组件10形成均匀磁场，提高了MRI图像质量。
请参见图5，在一个实施例中，所述第三结构电容303与所述第四控制电路600之间的所述第二电极层120的宽度小于所述第三结构电容303对应的所述第二电极层120的宽度。所述第二结构电容302与所述第四控制电路600之间的所述第一电极层110的宽度小于所述第二结构电容302对应的所述第一电极层110的宽度。也就是，在垂直于所述第一端103至所述第二端104的方向上所述第一传输线的宽度小于所述第三结构电容303对应的所述第二电极层120的宽度。所述第二传输线的宽度小于所述第二结构电容302对应的所述第一电极层110的宽度。
本实施例中，通过所述第一传输线，将所述第三结构电容303与所述第四控制电路600连接。通过所述第二传输线，将所述第二结构电容302与所述第四控制电路600连接。然而，传输线对应的电极层与电极层之间相对设置会形成杂散电容。所述第三结构电容303与所述第四控制电路600之间的所述第二电极层120的宽度变小，会使得所述第一传输线的宽度变小，进而使得电极层与电极层之间的相对时，面积变小。所述第二结构电容302与所述第四控制电路600之间的所述第一电极层110的宽度变小，会使得所述第二传输线的宽度变小，进而使得电极层与电极层之间的相对面积变小。
通过设置所述第一传输线的宽度和所述第二传输线的宽度，使得所述第一传输线和所述第二传输线与其他电极层相对时，使得正对面积变小，减小了形成的杂散电容。所述第一传输线的宽度小于所述第三结构电容303对应的所述第二电极层120的宽度，不仅能够确保所述第三结构电容303充分利用所述第二电极层120的面积形成结构电容，而且减小了杂散电容。所述第二传输线的宽度小于所述第二结构电容302对应的所述第一电极层110的宽度，不仅能够确保所述第二结构电容302充分利用所述第一电极层110的面积形成结构电容，而且减小了杂散电容。所以，在不影响形成所述第一结构电容301与所述第二结构电容302，且不影响两者连接的情况下，减小了杂散电容，更有利于磁场均匀分布，提高了MRI图像质量。
请参见图6，在一个实施例中，所述第二结构电容302对应的所述第一电极层110设置有第一开口401。所述第二结构电容302对应的所述第三电极层130设置有第二开口402。所述第一开口401与所述第二开口402在所述第一电介质层100的正投影重合。也就是，所述第一开口401与所述第二开口402相对设置于所述第一电介质层100的相对两个表面。
所述第一开口401与所述第二开口402在所述第一电介质层100的正投影重合，重合部分形成了具有一个开口的梳齿形的形状，能够进一步优化局部磁场分布，提高检测部位特定位置的检测效果。
请参见图7，在一个实施例中，所述第二结构电容302对应的所述第一电极层110设置有第三开口403。所述第三开口403与所述第一开口401间隔设置。所述第二结构电容302对应的所述第三电极层130设置有第四开口404。所述第四开口404与所述第二开口402间 隔设置。所述第三开口403与所述第四开口404在所述第一电介质层100的正投影重合。所述第一开口401与所述第二开口402在所述第一电介质层100的正投影重合。通过所述第一开口401、所述第二开口402、所述第三开口403以及所述第四开口404，使得正投影重合部分形成了具有两个开口的梳齿形的形状，能够进一步优化局部磁场分布，提高检测部位特定位置的检测效果。
在一个实施例中，所述第三结构电容303对应的所述第二电极层120的结构和所述第二结构电容302对应的所述第一电极层110的结构相同。所述第三结构电容303对应的所述第四电极层140和所述第二结构电容302对应的所述第三电极层130的结构相同。所述第三结构电容303的结构和所述第二结构电容302的结构相同，形成了对称的结构。
请参见图8，在一个实施例中，所述磁场增强组件10还包括第五电极层141与第五控制电路610。所述第五电极层141与所述第一电极层110间隔设置于所述第一表面101。且所述第五电极层141设置于所述第一电极层110与所述第二电极层120之间。所述第四控制电路600的一端与所述第二电极层120的一端连接。所述第四控制电路600的另一端与所述第五电极层141的一端连接。所述第五控制电路610的一端与所述第五电极层141的另一端连接。所述第五控制电路610的另一端与所述第一电极层110的一端连接。
本实施例中，所述第五控制电路610与所述第四控制电路600相同，包括所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接。通过所述第五控制电路610与所述第四控制电路600共同控制所述第一电极层110、所述第五电极层141以及所述第二电极层120在射频发射阶段断开，并在射频接收阶段连接。
请参见图9，在一个实施例中，所述磁场增强组件10还包括第五电极层141、第六控制电路620以及第六电极层121。所述第五电极层141与所述第一电极层110间隔设置于所述第一表面101。且所述第五电极层141设置于所述第一电极层110与所述第二电极层120之间。所述第四控制电路600的一端与所述第五电极层141的另一端连接。所述第四控制电路600的另一端与所述第一电极层110的一端连接。所述第六控制电路620的一端与所述第四电极层140的一端连接。所述第六电极层121与所述第三电极层130间隔设置于所述第二表面102。且所述第六电极层121设置于所述第四电极层140与所述第三电极层130之间。所述第六控制电路620的另一端与所述第六电极层121的一端连接。所述第六电极层121在所述第一电介质层100的正投影和所述第五电极层141在所述第一电介质层100的正投影部分重合，形成第一结构电容301。
本实施例中，所述第六控制电路620与所述第四控制电路600相同，包括所述第一耗尽型MOS管231与所述第二耗尽型MOS管232反向串联连接。通过所述第六控制电路620与所述第四控制电路600共同控制所述第一电极层110、所述第五电极层141、所述第六电极层121以及所述第四电极层140在射频发射阶段断开，并在射频接收阶段连接。
所述第三结构电容303与所述第六控制电路620之间的所述第四电极层140形成第三传输线。所述第六控制电路620与所述第一结构电容301之间的所述第六电极层121形成第四传输线。所述第一结构电容301与所述第四控制电路600之间的所述第五电极层141形成第五传输线。所述第四控制电路600与所述第二结构电容302之间的所述第一电极层110形成第六传输线。通过所述第三传输线、所述第四传输线、所述第五传输线以及所述第六传输线将所述第三结构电容303、所述第六控制电路620、所述第一结构电容301、所述第四控制电路600以及所述第二结构电容302串联连接。所述磁场增强组件10包括了多个串联连接的结构电容。
在射频接收阶段，所述第三结构电容303、所述第一结构电容301以及所述第二结构电容302形成电容串联的结构，将感应电压分为多个，减小了所述第三结构电容303、所述第一结构电容301以及所述第二结构电容302的分压。
进一步，所述第三结构电容303、所述第一结构电容301以及所述第二结构电容302形成电容串联的结构，降低了与其并联的寄生电容上的电压。寄生电容上的电压减小，降低了寄生电容的危害，从而减小了负载效应。所述磁场增强组件10的负载效应减小，使得所述多个磁场增强组件10形成的谐振回路的谐振频率不容易受到受测物体的影响，提高了所述磁场增强组件10的增强性能，增强了谐振频率的稳定性。
请参见图10与图11，在一个实施例中，本申请提供一种磁场增强器件20。所述磁场增强器件20包括筒形支撑结构50、多个磁场增强组件10、第一环形导电片510以及第二环形导电片520。所述筒形支撑结构50具有两个间隔相对的第三端51和第四端53。所述多个磁场增强组件10间隔设置于所述筒形支撑结构50。所述多个磁场增强组件10沿着所述第三端51向所述第四端53延伸。所述第一环形导电片510设置于所述筒形支撑结构50。所述第一环形导电片510靠近所述第三端51。所述第一环形导电片510与每个所述磁场增强组件10的所述第二电极层120连接。所述第二环形导电片520设置于所述筒形支撑结构50。所述第二环形导电片520靠近所述第四端53。所述第二环形导电片520与每个所述磁场增强组件10的所述第一电极层110连接。
在一个实施例中，所述第一环形导电片510与每个所述磁场增强组件10的所述第二电极层120连接。所述第二环形导电片520与每个所述磁场增强组件10的所述第一电极层110连接。
在一个实施例中，所述第一环形导电片510和所述第二环形导电片520的材料可以为金、银、铜等金属材料制成。
在一个实施例中，所述第一环形导电片510与每个所述磁场增强组件10的所述第四电极层140连接。所述第二环形导电片520与每个所述磁场增强组件10的所述第三电极层130连接。
所述筒形支撑结构50具有相对间隔设置的内表面和外表面。所述筒形支撑结构50的内表面可以包围形成一个检测空间509。所述检测空间509可以用于容纳检测部位。所述检测部位可以为手臂、腿、腹部等。所述多个磁场增强组件10间隔的距离相等可以提高局部磁场的均匀性。
多个所述磁场增强组件10可以等间隔设置于所述筒形支撑结构50的外表面。所述第一环形导电片510和所述第二环形导电片520分别设置于所述筒形支撑结构50相对的两端，并环绕所述筒形支撑结构50的轴线504设置。
每个所述磁场增强组件10的两端分别与所述第一环形导电片510和所述第二环形导电片520连接。通过所述第一环形导电片510和所述第二环形导电片520将多个磁场增强组件10连接。所述第一环形导电片510和所述第二环形导电片520分别首尾连接，使得所述磁场增强器件20的整个结构各向同性，磁场均匀性提高。
所述第一环形导电片510和所述第二环形导电片520可以分别环绕所述筒形支撑结构50的轴线504设置，即所述第一环形导电片510和所述第二环形导电片520均为环状结构。
在一个实施例中，围绕所述筒形支撑结构50的外表面间隔设置有多个限位结构530。在沿着所述第三端51到所述第四端53的方向，每一个所述磁场增强组件10分别对应所述第三端51的所述限位结构530和所述第四端53的所述限位结构530。通过所述第三端51和所述第四端53两端的所述限位结构530，固定一个所述磁场增强组件10，进而将所述磁场增强组件10固定于所述筒形支撑结构50的外表面。
在一个实施例中，所述限位结构530可以为通槽。所述通槽可以用于插入所述磁场增强组件10。所述两个通槽分别限制所述磁场增强组件10的两端。通过所述限位结构530可以将所述磁场增强组件10固定于所述筒形支撑结构50的外表面。
在一个实施例中，所述磁场增强器件20可以包括12块所述磁场增强组件10，围绕所述轴线504等间隔排列于所述筒形支撑结构50的外表面。
请参见图12，图12显示的是所述磁场增强器件20在射频发射阶段和射频接收阶段的谐振性能。由图12可以看出，所述磁场增强器件20在射频接收阶段具有良好的谐振频率，能够大幅度增强射频接收场，提高图像信噪比。所述磁场增强器件20在射频发射阶段，所述磁场增强组件10被所述第四控制电路600断开，使得多个所述磁场增强组件10形成的谐振回路被断开。所述磁场增强器件20不具有谐振性能，且也没有电流，不会感应出磁场，保证了加入所述磁场增强器件20后的射频磁场强度与加入之前相同。因此，通过所述第四控制电路600控制所述第一电极层110与所述第二电极层120在射频发射阶段断开，在射频接收阶段连接，使得所述磁场增强组件10只能增强射频接收场，不会对射频发射场进行增强，提高了图像信噪比。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中 的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
对所提供的实施例的上述说明，使本领域专业技术人员能够实现或使用本申请。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本申请的精神或范围的情况下，在其它实施例中实现。因此，本申请将不会被限制于本文所示的这些实施例，而是要符合与本文所提供的原理和新颖特点相一致的最宽的范围。

Claims (20)

  1. 一种磁场增强组件，其特征在于，所述磁场增强组件包括：
    第一电介质层(100)，具有第一表面(101)，所述第一电介质层(100)具有相对设置的第一端(103)与第二端(104)；
    第一电极层(110)，设置于所述第一表面(101)，且靠近所述第二端(104)设置；
    第二电极层(120)，设置于所述第一表面(101)，并与所述第一电极层(110)间隔设置，且靠近所述第一端(103)设置；
    第四控制电路(600)，所述第四控制电路(600)的一端与所述第二电极层(120)远离所述第一端(103)的一端连接，所述第四控制电路(600)的另一端与所述第一电极层(110)远离所述第二端(104)的一端连接；
    所述第四控制电路(600)用于控制所述第一电极层(110)与所述第二电极层(120)在射频发射阶段断开，且在射频接收阶段连接。
  2. 如权利要求1所述的磁场增强组件，其特征在于，所述第四控制电路(600)包括：
    第一耗尽型MOS管(231)，所述第一耗尽型MOS管(231)的源极与所述第二电极层(120)连接，所述第一耗尽型MOS管(231)的栅极和漏极连接；
    第二耗尽型MOS管(232)，所述第二耗尽型MOS管(232)的栅极和漏极连接，并与所述第一耗尽型MOS管(231)的栅极和漏极连接，所述第二耗尽型MOS管(232)的源极与所述第一电极层(110)连接。
  3. 如权利要求2所述的磁场增强组件，其特征在于，所述第四控制电路(600)还包括：
    第三耗尽型MOS管(233)，所述第三耗尽型MOS管(233)的源极与所述第一耗尽型MOS管(231)的源极连接，所述第三耗尽型MOS管(233)的栅极和漏极连接；
    第四耗尽型MOS管(234)，所述第四耗尽型MOS管(234)的栅极和漏极连接，并与所述第三耗尽型MOS管(233)的栅极和漏极连接，所述第四耗尽型MOS管(234)的源极与所述第二耗尽型MOS管(232)的源极连接。
  4. 如权利要求1所述的磁场增强组件，其特征在于，沿着由所述第一端(103)至所述第二端(104)的方向，所述第二电极层(120)和所述第一电极层(110)关于所述第四控制电路(600)对称设置。
  5. 如权利要求1所述的磁场增强组件，其特征在于，所述第一电介质层(100)具有第二表面(102)，与所述第一表面(101)相对设置，所述磁场增强组件还包括：
    第三电极层(130)，设置于所述第二表面(102)，并覆盖部分所述第二表面(102)，且靠近所述第二端(104)设置；
    所述第三电极层(130)在所述第一电介质层(100)的正投影与所述第一电极层(110)在所述第一电介质层(100)的正投影部分重和，形成第二结构电容(302)；
    第四电极层(140)，设置于所述第二表面(102)，并覆盖部分所述第二表面(102)，且靠近所述第一端(103)设置；
    所述第四电极层(140)在所述第一电介质层(100)的正投影与所述第二电极层(120)在所述第一电介质层(100)的正投影部分重和，形成第三结构电容(303)。
  6. 如权利要求5所述的磁场增强组件，其特征在于，沿着所述第一端(103)至所述第二端(104)的方向上，所述第三结构电容(303)与所述第四控制电路(600)之间的所述第二电极层(120)的长度和所述第二结构电容(302)与所述第四控制电路(600)之间的所述第一电极层(110)的长度相同。
  7. 如权利要求5所述的磁场增强组件，其特征在于，所述第三结构电容(303)与所述第四控制电路(600)之间的所述第二电极层(120)的宽度小于所述第三结构电容(303)对应的所述第二电极层(120)的宽度；
    所述第二结构电容(302)与所述第四控制电路(600)之间的所述第一电极层(110)的宽度小于所述第二结构电容(302)对应的所述第一电极层(110)的宽度。
  8. 如权利要求5所述的磁场增强组件，其特征在于，还包括：
    第五电极层(141)，设置于所述第一表面(101)，且间隔设置于所述第一电极层(110)和所述第二电极层(120)之间；
    第五控制电路(610)，所述第四控制电路(600)的一端与所述第二电极层(120)的一端连接，所述第四控制电路(600)的另一端与所述第五电极层(141)的一端连接，所述第五控制电路(610)的一端与所述第五电极层(141)的另一端连接，所述第五控制电路(610)的另一端与所述第一电极层(110)的一端连接；
    所述第五控制电路(610)用于控制所述第五电极层(141)与所述第一电极层(110)在所述射频发射阶段断开，且在所述射频接收阶段连接；
    所述第四控制电路(600)用于控制所述第二电极层(120)与所述第五电极层(141)在所述射频发射阶段断开，且在所述射频接收阶段连接。
  9. 如权利要求8所述的磁场增强组件，其特征在于，所述第五控制电路(610)与所述第四控制电路(600)相同。
  10. 如权利要求5所述的磁场增强组件，其特征在于，还包括：
    第五电极层(141)，设置于所述第一表面(101)，且间隔设置于所述第一电极层(110)和所述第二电极层(120)之间；
    第六电极层(121)，设置于所述第二表面(102)，且间隔设置于所述第四电极层(140)和所述第三电极层(130)之间；
    第六控制电路(620)，所述第六控制电路(620)的一端与所述第四电极层(140)的一端连接，所述第六控制电路(620)的另一端与所述第六电极层(121)的一端连接；
    所述第六电极层(121)在所述第一电介质层(100)的正投影和所述第五电极层(141)在所述第一电介质层(100)的正投影部分重合，形成第一结构电容(301)；
    所述第四控制电路(600)的一端与所述第五电极层(141)远离所述第六电极层(121)的一端连接，所述第四控制电路(600)的另一端与所述第一电极层(110)的一端连接。
  11. 如权利要求5所述的磁场增强组件，其特征在于，所述第二结构电容(302)对应的所述第一电极层(110)设置有第一开口(401)，所述第二结构电容(302)对应的所述第三电极层(130)设置有第二开口(402)，所述第一开口(401)与所述第二开口(402)在所述第一电介质层(100)的正投影重合。
  12. 如权利要求11所述的磁场增强组件，其特征在于，所述第二结构电容(302)对应的所述第一电极层(110)设置有第三开口(403)，所述第三开口(403)与所述第一开口(401)间隔设置；
    所述第二结构电容(302)对应的所述第三电极层(130)设置有第四开口(404)，所述第四开口(404)与所述第二开口(402)间隔设置；
    所述第三开口(403)与所述第四开口(404)在所述第一电介质层(100)的正投影重合。
  13. 如权利要求1所述的磁场增强组件，其特征在于，所述第一电极层(110)、所述第二电极层(120)、所述第三电极层(130)以及所述第四电极层(140)的材料为无磁性金属材料。
  14. 一种磁场增强器件，其特征在于，包括：
    筒形支撑结构(50)，具有两个间隔相对的第三端(51)和第四端(53)；
    多个磁场增强组件(10)，每个所述磁场增强组件(10)包括：
    第一电介质层(100)，具有第一表面(101)，所述第一电介质层(100)具有相对设置的第一端(103)与第二端(104)；
    第一电极层(110)，设置于所述第一表面(101)，且靠近所述第二端(104)设置；
    第二电极层(120)，设置于所述第一表面(101)，并与所述第一电极层(110)间隔，且靠近所述第一端(103)设置；
    第四控制电路(600)，所述第四控制电路(600)的一端与所述第二电极层(120)远离所述第一端(103)的一端连接，所述第四控制电路(600)的另一端与所述第一电极层(110)远离所述第二端(104)的一端连接；
    所述第四控制电路(600)用于控制所述第一电极层(110)与所述第二电极层(120)在射频发射阶段断开，且在射频接收阶段连接；
    所述多个磁场增强组件(10)间隔设置于所述筒形支撑结构(50)，并沿着所述第三端(51) 向所述第四端(53)延伸；
    第一环形导电片(510)，设置于所述筒形支撑结构(50)，并靠近所述第三端(51)，所述第一环形导电片(510)与每个所述磁场增强组件(10)的所述第二电极层(120)连接；以及
    第二环形导电片(520)，设置于所述筒形支撑结构(50)，并靠近所述第四端(53)，所述第二环形导电片(520)与每个所述磁场增强组件(10)的所述第一电极层(110)连接。
  15. 如权利要求14所述的磁场增强器件，其特征在于，所述筒形支撑结构(50)具有相对间隔设置的内表面和外表面，所述内表面包围形成一个检测空间(509)。
  16. 如权利要求15所述的磁场增强器件，其特征在于，所述多个磁场增强组件(10)等间隔设置于所述外表面。
  17. 如权利要求15所述的磁场增强器件，其特征在于，还包括：
    多个限位结构(530)，间隔设置于所述外表面，且分别设置于所述第三端(51)与所述第四端(53)；
    沿着所述第三端(51)至所述第四端(53)的方向，每一个所述磁场增强组件(10)分别对应所述第三端(51)的所述限位结构(530)和所述第四端(53)的所述限位结构(530)。
  18. 如权利要求17所述的磁场增强器件，其特征在于，所述限位结构(530)为通槽。
  19. 如权利要求14所述的磁场增强器件，其特征在于，所述第一环形导电片(510)与所述第二环形导电片(520)分别环绕所述筒形支撑结构(50)的轴线(504)设置。
  20. 一种磁场增强组件，其特征在于，包括：
    第一电介质层(100)，具有相对设置的第一表面(101)与第二表面(102)，所述第一电介质层(100)具有相对设置的第一端(103)与第二端(104)；
    第一电极层(110)，设置于所述第一表面(101)，且靠近所述第二端(104)设置；
    第二电极层(120)，设置于所述第一表面(101)，并与所述第一电极层(110)间隔设置，且靠近所述第一端(103)设置；
    第四控制电路(600)，所述第四控制电路(600)的一端与所述第二电极层(120)远离所述第一端(103)的一端连接，所述第四控制电路(600)的另一端与所述第一电极层(110)远离所述第二端(104)的一端连接；
    所述第四控制电路(600)用于控制所述第一电极层(110)与所述第二电极层(120)在射频发射阶段断开，且在射频接收阶段连接；
    第三电极层(130)，设置于所述第二表面(102)，并覆盖部分所述第二表面(102)，且靠近所述第二端(104)设置；
    所述第三电极层(130)在所述第一电介质层(100)的正投影与所述第一电极层(110)在所述第一电介质层(100)的正投影部分重和，形成第二结构电容(302)；
    第四电极层(140)，设置于所述第二表面(102)，并覆盖部分所述第二表面(102)，且靠近所述第一端(103)设置；
    所述第四电极层(140)在所述第一电介质层(100)的正投影与所述第二电极层(120)在所述第一电介质层(100)的正投影部分重和，形成第三结构电容(303)。
PCT/CN2021/113730 2021-02-10 2021-08-20 基于mos管的非线性响应mri图像增强超构表面器件 Ceased WO2022170752A1 (zh)

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