WO2022168635A1 - 電力変換システム及び制御方法 - Google Patents
電力変換システム及び制御方法 Download PDFInfo
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- WO2022168635A1 WO2022168635A1 PCT/JP2022/002198 JP2022002198W WO2022168635A1 WO 2022168635 A1 WO2022168635 A1 WO 2022168635A1 JP 2022002198 W JP2022002198 W JP 2022002198W WO 2022168635 A1 WO2022168635 A1 WO 2022168635A1
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 30
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- 238000001514 detection method Methods 0.000 claims abstract description 36
- 230000008569 process Effects 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 393
- 238000004804 winding Methods 0.000 claims description 93
- 239000003990 capacitor Substances 0.000 claims description 80
- 230000003071 parasitic effect Effects 0.000 claims description 2
- 230000002457 bidirectional effect Effects 0.000 description 31
- 238000010586 diagram Methods 0.000 description 25
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 4
- 244000145845 chattering Species 0.000 description 3
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- 238000004891 communication Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/01—Resonant DC/DC converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33573—Full-bridge at primary side of an isolation transformer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33584—Bidirectional converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
- H02M1/007—Plural converter units in cascade
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Definitions
- the present disclosure relates to a power conversion system and control method, and more particularly to a power conversion system including a DC-DC converter and a control method for the power conversion system.
- Patent Document 1 discloses a DC-DC converter capable of increasing the output voltage beyond the voltage corresponding to the transformer turns ratio, in which either one of the low-voltage side switching unit and the high-voltage side switching unit is connected to the primary winding of an isolation transformer.
- An isolated bi-directional DC-DC converter is disclosed in which the two are connected and the other is connected to the secondary winding of an isolation transformer.
- capacitors for current resonance are provided between the low voltage side switching unit and the isolation transformer and between the high voltage side switching unit and the isolation transformer. connected in series.
- the output voltage may be required to vary over a wider range, and the circuit topology of the DC-DC converter can be changed by the control circuit of the DC-DC converter while the DC-DC converter is in operation.
- overcurrent may occur when the circuit topology of the DC-DC converter is changed.
- An object of the present disclosure is to provide a power conversion system and control method capable of suppressing the occurrence of overcurrent.
- a power conversion system includes a DC-DC converter, a detection circuit, and a control circuit.
- the DC-DC converter has a transformer, a first capacitor, and a second capacitor.
- the transformer includes a first winding and a second winding and has a first leakage inductance on the first winding and a second leakage inductance on the second winding.
- the first capacitor is for resonance and is connected to the first winding.
- the second capacitor is for resonance and is connected to the second winding.
- the detection circuit detects changes in the output voltage of the DC-DC converter.
- the control circuit controls the DC-DC converter.
- the control circuit has, as operation modes, a first control mode in which the DC-DC converter is controlled at a first drive frequency, and a second control mode in which the DC-DC converter is controlled at a second drive frequency higher than the first drive frequency. 2 control mode, and a third control mode in which the DC-DC converter is controlled at a third drive frequency higher than the first drive frequency and different from the second drive frequency.
- the control circuit changes the operation mode from the first control mode to the second control mode when the detection circuit detects a predetermined change in the output voltage during operation in the first control mode. It is configured. In the process of changing from the first control mode to the second control mode when the predetermined change is detected, the control circuit controls the DC-DC converter before controlling the DC-DC converter in the second control mode. Three control modes control the DC-DC converter.
- a control method is a control method for a power conversion system.
- the power conversion system includes a DC-DC converter and a detection circuit.
- the DC-DC converter has a transformer, a first capacitor, and a second capacitor.
- the transformer includes a first winding and a second winding and has a first leakage inductance on the first winding and a second leakage inductance on the second winding.
- the first capacitor is for resonance and is connected to the first winding.
- the second capacitor is for resonance and is connected to the second winding.
- the detection circuit detects changes in the output voltage of the DC-DC converter.
- the DC-DC converter when a predetermined change in the output voltage is detected by the detection circuit, the DC-DC converter is switched from a first control mode in which the DC-DC converter is controlled at a first drive frequency to the first drive frequency. In the process of changing to a second control mode that controls at a second drive frequency higher than one drive frequency, before controlling the DC-DC converter in the second control mode, the DC-DC converter is controlled at the first drive frequency.
- the DC-DC converter is controlled in a third control mode in which control is performed at a third drive frequency higher than the second drive frequency and different from the second drive frequency.
- FIG. 1 is a circuit diagram of a power conversion system according to an embodiment.
- FIG. 2 is an operation explanatory diagram of the power conversion system same as the above.
- FIG. 3 is an operation explanatory diagram of the power conversion system same as the above.
- FIG. 4 is an equivalent circuit diagram of a DC-DC converter when controlling the DC-DC converter in a full bridge control mode, relating to the power conversion system of the same.
- FIG. 5 is an equivalent circuit diagram of a DC-DC converter when the DC-DC converter is controlled in the voltage doubler control mode in the power conversion system of the same.
- FIG. 6 is an equivalent circuit diagram of a DC-DC converter in the case of controlling the DC-DC converter in the half-bridge control mode, relating to the same power conversion system.
- FIG. 1 is a circuit diagram of a power conversion system according to an embodiment.
- FIG. 2 is an operation explanatory diagram of the power conversion system same as the above.
- FIG. 3 is an operation explanatory diagram of the power conversion system same as the
- FIG. 7 is a timing chart when controlling the DC-DC converter in the full bridge control mode in the power conversion system of the same.
- FIG. 8 is an explanatory diagram of current paths when controlling the DC-DC converter in the full-bridge control mode in the power conversion system of the same.
- FIG. 9 is an explanatory diagram of current paths when controlling the DC-DC converter in the full-bridge control mode in the power conversion system of the same.
- FIG. 10 is an explanatory diagram of current paths when controlling the DC-DC converter in the full-bridge control mode in the power conversion system of the same.
- FIG. 11 is an explanatory diagram of current paths when controlling the DC-DC converter in the full-bridge control mode in the power conversion system of the same.
- FIG. 12 is a timing chart when controlling the DC-DC converter in the voltage doubler control mode in the power conversion system of the same.
- FIG. 13 is an explanatory diagram of current paths in the case of controlling the DC-DC converter in the voltage doubler control mode in the power conversion system same as above.
- FIG. 14 is an explanatory diagram of a current path when controlling the DC-DC converter in the voltage doubler control mode in the power conversion system of the same.
- FIG. 15 is an explanatory diagram of current paths when controlling the DC-DC converter in the voltage doubler control mode in the power conversion system of the same.
- FIG. 16 is an explanatory diagram of current paths when controlling the DC-DC converter in the voltage doubler control mode in the power conversion system of the same.
- FIG. 17 is an explanatory diagram of current paths when the DC-DC converter is controlled in the half-bridge control mode in the power conversion system of the same.
- FIG. 18 is an explanatory diagram of current paths when controlling the DC-DC converter in the half-bridge control mode in the power conversion system of the same.
- 19A and 19B are operation explanatory diagrams of the same power conversion system.
- FIG. 20 is an operation explanatory diagram of the power conversion system according to Modification 1 of the embodiment.
- FIG. 21 is an equivalent circuit diagram of a power conversion system according to Modification 2 of the embodiment.
- the power conversion system 100 includes a DC-DC converter 1, a detection circuit 2, and a control circuit 3, as shown in FIG.
- the DC-DC converter 1 has a transformer Tr1, a first capacitor C1, and a second capacitor C2.
- the transformer Tr1 includes a first winding N1 and a second winding N2, and has a first leakage inductance on the first winding N1 side and a second leakage inductance on the second winding N2 side.
- FIG. 1 is an equivalent circuit diagram showing the first leakage inductance of the transformer Tr1 as a resonance first inductor L1 and the second leakage inductance as a resonance second inductor L2.
- the first capacitor C1 is for resonance and is connected to the first winding N1.
- the first capacitor C1 is connected to the first winding N1 via the first inductor L1.
- a second capacitor C2 is for resonance and is connected to the second winding N2.
- the second capacitor C2 is connected in series with the second winding N2 via the second inductor L2.
- a detection circuit 2 detects changes in the output voltage of the DC-DC converter 1 .
- a control circuit 3 controls the DC-DC converter 1 .
- the number of turns of the second winding N2 is greater than the number of turns of the first winding N1.
- the DC-DC converter 1 for example, a pair of a first input/output terminal 11 and a second input/output terminal 12 and a pair of a third input/output terminal 13 and a fourth input/output terminal 14. It is a bidirectional DC-DC converter capable of voltage conversion at .
- the DC-DC converter 1 can be applied to, for example, a power conditioner.
- the DC-DC converter 1 can be applied to, for example, a power conditioner compatible with the CHAdeMO (registered trademark) specifications.
- the DC-DC converter 1 is an isolated bidirectional DC-DC converter using a transformer Tr1. More specifically, the DC-DC converter 1 is a CLLC resonance type bi-directional DC-DC converter that utilizes resonance between the first capacitor C1 and the first inductor L1, and the second inductor L2 and the second capacitor C2.
- the DC-DC converter 1 has a first input/output terminal 11, a second input/output terminal 12, a third input/output terminal 13 and a fourth input/output terminal .
- the DC-DC converter 1 is a switching-type DC-DC converter, and has a plurality of semiconductor switching elements (first to eighth semiconductor switching elements Q1 to Q8).
- the DC-DC converter 1 includes a series circuit of the first semiconductor switching element Q1 and the second semiconductor switching element Q2, a series circuit of the third semiconductor switching element Q3 and the fourth semiconductor switching element Q4, and a fifth semiconductor switching element Q4. It has a series circuit of a semiconductor switching element Q5 and a sixth semiconductor switching element Q6, and a series circuit of a seventh semiconductor switching element Q7 and an eighth semiconductor switching element Q8.
- a series circuit of the first semiconductor switching element Q1 and the second semiconductor switching element Q2 is connected between the first input/output terminal 11 and the second input/output terminal 12 .
- a series circuit of the third semiconductor switching element Q3 and the fourth semiconductor switching element Q4 is connected between the first input/output terminal 11 and the second input/output terminal 12 .
- a series circuit of the fifth semiconductor switching element Q5 and the sixth semiconductor switching element Q6 is connected between the third input/output terminal 13 and the fourth input/output terminal 14 .
- a series circuit of the seventh semiconductor switching element Q7 and the eighth semiconductor switching element Q8 is connected between the third input/output terminal 13 and the fourth input/output terminal .
- the DC-DC converter 1 has a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a seventh diode D7 and an eighth diode D8.
- the first diode D1 is anti-parallel connected to the first semiconductor switching element Q1.
- the second diode D2 is anti-parallel connected to the second semiconductor switching element Q2.
- the third diode D3 is anti-parallel connected to the third semiconductor switching element Q3.
- the fourth diode D4 is anti-parallel connected to the fourth semiconductor switching element Q4.
- the fifth diode D5 is anti-parallel connected to the fifth semiconductor switching element Q5.
- the sixth diode D6 is anti-parallel connected to the sixth semiconductor switching element Q6.
- the seventh diode D7 is anti-parallel connected to the seventh semiconductor switching element Q7.
- the eighth diode D8 is anti-parallel connected to the eighth semiconductor switching element Q8.
- each of the first to eighth semiconductor switching elements Q1 to Q8 has a control terminal, a first main terminal and a second main terminal. Control terminals of the first to eighth semiconductor switching elements Q1 to Q8 are connected to the control circuit 3.
- FIG. The first to eighth semiconductor switching elements Q1 to Q8 are turned on and off according to a control signal (control voltage) given from the control circuit 3.
- Each of the first to eighth semiconductor switching elements Q1 to Q8 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). More specifically, each of the first to eighth semiconductor switching elements Q1 to Q8 is an n-channel MOSFET.
- the n-channel MOSFET is a normally-off Si-based MOSFET.
- the control terminals, first main terminals and second main terminals are gate terminals, drain terminals and source terminals, respectively.
- the drain terminal of the first semiconductor switching element Q1 is connected to the first input/output terminal 11
- the source terminal of the first semiconductor switching element Q1 is connected to the drain terminal of the second semiconductor switching element Q2
- a source terminal of the second semiconductor switching element Q2 is connected to the second input/output terminal 12 .
- the drain terminal of the third semiconductor switching element Q3 is connected to the first input/output terminal 11
- the source terminal of the third semiconductor switching element Q3 is connected to the drain terminal of the fourth semiconductor switching element Q4
- a source terminal of the fourth semiconductor switching element Q4 is connected to the second input/output terminal 12 .
- the drain terminal of the fifth semiconductor switching element Q5 is connected to the third input/output terminal 13
- the source terminal of the fifth semiconductor switching element Q5 is connected to the drain terminal of the sixth semiconductor switching element Q6
- a source terminal of the sixth semiconductor switching element Q6 is connected to the fourth input/output terminal 14. As shown in FIG.
- the drain terminal of the seventh semiconductor switching element Q7 is connected to the third input/output terminal 13
- the source terminal of the seventh semiconductor switching element Q7 is connected to the drain terminal of the eighth semiconductor switching element Q8,
- a source terminal of the eighth semiconductor switching element Q8 is connected to the fourth input/output terminal .
- the first to eighth diodes D1 to D8 are parasitic diodes of the MOSFETs of the first to eighth semiconductor switching elements Q1 to Q8, respectively.
- Each of the first through eighth diodes D1 through D8 has an anode and a cathode.
- the anode and cathode of each of the first to eighth diodes D1 to D8 are connected to the second main terminal (source terminal) and first main terminal (source terminal) of the corresponding semiconductor switching element among the first to eighth semiconductor switching elements Q1 to Q8. drain terminal).
- the first winding N1 of the transformer Tr1 is connected via the first capacitor C1 to the connection point between the first semiconductor switching element Q1 and the second semiconductor switching element Q2 and the third semiconductor switching element Q3. It is connected between the connection point with the fourth semiconductor switching element Q4.
- the second winding N2 of the transformer Tr2 is connected via the second capacitor C2 to the connection point between the fifth semiconductor switching element Q5 and the sixth semiconductor switching element Q6 and the seventh semiconductor switching element Q7. It is connected between the connection point with the eighth semiconductor switching element Q8.
- the DC-DC converter 1 further includes a first storage circuit 15 and a second storage circuit 16 .
- the first storage circuit 15 is connected between the first input/output terminal 11 and the second input/output terminal 12 .
- the first storage circuit 15 has a third capacitor C3.
- the third capacitor C3 is, for example, an electrolytic capacitor.
- the second storage circuit 16 is connected between the third input/output terminal 13 and the fourth input/output terminal 14 .
- the second storage circuit 16 has a fourth capacitor C4.
- the fourth capacitor C4 is, for example, an electrolytic capacitor.
- the DC-DC converter 1 is capable of a first conversion operation of converting a first input voltage into a first output voltage and a second conversion operation of converting a second input voltage into a second output voltage.
- the semiconductor switching elements switched among the first to eighth semiconductor switching elements Q1 to Q8 are different between the first conversion operation and the second conversion operation.
- the DC-DC converter 1 uses the voltage V1 between the first input/output terminal 11 and the second input/output terminal 12 as the first input voltage, and the third input/output terminal 13 and the fourth input/output terminal 13 as the first input voltage.
- the voltage V2 between the output terminal 14 is used as the first output voltage, and in the case of the second conversion operation, the voltage V2 between the third input/output terminal 13 and the fourth input/output terminal 14 is used as the second input voltage.
- a voltage V1 between the first input/output terminal 11 and the second input/output terminal 12 is defined as a second output voltage.
- the DC-DC converter 1 converts the first input voltage (voltage V1) input between the first input/output terminal 11 and the second input/output terminal 12 to the first input voltage (voltage V1 ) to a first output voltage (voltage V ⁇ b>2 ) different from the first output voltage (voltage V ⁇ b>2 ) and output between the third input/output terminal 13 and the fourth input/output terminal 14 .
- the DC-DC converter 1 changes the second input voltage (voltage V2) input between the third input/output terminal 13 and the fourth input/output terminal 14 to the second input voltage ( The voltage is converted into a second output voltage (voltage V1) different from the voltage V2) and output between the first input/output terminal 11 and the second input/output terminal 12 .
- the detection circuit 2 detects a first output voltage (voltage V2 ) is detected as the output voltage of the DC-DC converter 1, and a predetermined change in the output voltage (voltage V2) is detected.
- the predetermined change is, for example, a change in the output voltage (voltage V2) from a first voltage value (eg, 350V) to a second voltage value (eg, 300V).
- the second voltage value is different than the first voltage value and less than the first voltage value.
- the detection circuit 2 includes, for example, a resistive voltage dividing circuit connected across the fourth capacitor C4, a reference voltage source, the output voltage of the DC-DC converter 1 detected by the resistive voltage dividing circuit, and the voltage of the reference voltage source. and a comparator that compares with.
- the control circuit 3 controls the DC-DC converter 1 as described above. More specifically, the control circuit 3 controls the first to eighth semiconductor switching elements Q1 to Q8.
- the control circuit 3 has, as operation modes, a first control mode in which the DC-DC converter 1 is controlled at a first drive frequency f1 (see FIG. 2), and a second control mode in which the DC-DC converter 1 is controlled at a second drive frequency f2 (see FIG. 2). and a third control mode in which the DC-DC converter 1 is controlled at a third drive frequency f3 (see FIG. 2).
- the second drive frequency f2 is a frequency higher than the first drive frequency f1.
- the third drive frequency f3 is a frequency higher than the first drive frequency f1 and different from the second drive frequency f2.
- the third driving frequency f3 is a frequency lower than the second driving frequency f2.
- the first drive frequency f1, the second drive frequency f2 and the third drive frequency f3 are 220 kHz, 250 kHz and 240 kHz, respectively.
- Numerical values of the first driving frequency f1, the second driving frequency f2, and the third driving frequency f3 are only examples, and are not limited to these numerical values.
- the first control mode, the second control mode, and the third control mode are operation modes when the DC-DC converter 1 performs the first conversion operation.
- the control circuit 3 is configured to change the operation mode from the first control mode to the second control mode when the detection circuit 2 detects a predetermined change in the output voltage (voltage V2) during operation in the first control mode. It is In the process of changing from the first control mode to the second control mode when the predetermined change is detected, the control circuit 3 controls the DC-DC converter 1 in the third control mode before controlling the DC-DC converter 1 in the second control mode. It controls the DC-DC converter
- the control circuit 3 is configured to be able to apply first to eighth control voltages (gate voltages) to the first to eighth semiconductor switching elements Q1 to Q8, respectively.
- the control circuit 3 includes, for example, first to eighth drive circuits that apply first to eighth control voltages to the first to eighth semiconductor switching elements Q1 to Q8, respectively, and a control section that controls the first to eighth drive circuits. and have The first to eighth control voltages are voltages applied between the control terminals and the second main terminals of the first to eighth semiconductor switching elements Q1 to Q8.
- the first to eighth control voltages are, for example, a voltage value (eg, 10 V) higher than the threshold voltage (gate threshold voltage) of the first to eighth semiconductor switching elements Q1 to Q8 and a voltage value (eg, 10 V) lower than the threshold voltage (eg , 0 V).
- the switching frequencies which are the frequencies of the first to eighth control voltages, are, for example, 100 kHz to 300 kHz. Defined by the ratio of the period of the voltage value higher than the threshold voltage to one cycle of the first to eighth control voltages (the sum of the period of the voltage value higher than the threshold voltage and the period of the voltage value lower than the threshold voltage)
- the duty is, for example, 0.1 to 0.9.
- the first to eighth drive circuits are controlled by the controller and output first to eighth control voltages.
- the execution subject of the control unit includes the computer system.
- a computer system has one or more computers.
- a computer system is mainly composed of a processor and a memory as hardware.
- the processor executes a program recorded in the memory of the computer system, thereby realizing the function of the control unit in the present disclosure as an execution entity.
- the program may be recorded in advance in the memory of the computer system, may be provided through an electric communication line, or may be stored in a non-temporary storage medium such as a computer system-readable memory card, optical disk, or hard disk drive (magnetic disk). may be recorded on a physical recording medium and provided.
- a processor in a computer system consists of one or more electronic circuits including semiconductor integrated circuits (ICs) or large scale integrated circuits (LSIs).
- ICs semiconductor integrated circuits
- LSIs large scale integrated circuits
- a plurality of electronic circuits may be integrated into one chip, or may be distributed over a plurality of chips.
- a plurality of chips may be integrated in one
- the control circuit 3 can operate the DC-DC converter 1 in a full-bridge control mode, a double voltage control mode, and a half-bridge control mode.
- the first control mode and the second control mode are the full bridge control mode and the voltage doubler control mode, respectively.
- the DC-DC converter 1 changes its voltage gain depending on the drive frequency.
- Driving frequency is the switching frequency. More specifically, the “driving frequency” is the switching frequency of the semiconductor switching element to be switched among the plurality of semiconductor switching elements (first to eighth semiconductor switching elements Q1 to Q8).
- Voltage gain is the ratio between the input voltage and the output voltage of the DC-DC converter 1, and is the value obtained by dividing the output voltage by the input voltage.
- FIG. 4 is an equivalent circuit diagram of the DC-DC converter 1 when the control circuit 3 controls the DC-DC converter 1 in full bridge control mode.
- FIG. 5 is an equivalent circuit diagram of the DC-DC converter 1 when the control circuit 3 controls the DC-DC converter 1 in the voltage doubler control mode.
- the control circuit 3 turns off the third semiconductor switching element Q3, turns on the fourth semiconductor switching element Q4, and turns on the fifth semiconductor switching element Q4 in the half-bridge control mode.
- the switching element Q5, the sixth semiconductor switching element Q6, the seventh semiconductor switching element Q7, and the eighth semiconductor switching element Q8 are turned off, and the first semiconductor switching element Q1 and the second semiconductor switching element Q2 are turned off. Switching is performed so that the ON periods of the switching element Q1 and the second semiconductor switching element Q2 do not overlap.
- FIG. 6 is an equivalent circuit diagram of the DC-DC converter 1 when the control circuit 3 controls the DC-DC converter 1 in the half-bridge control mode.
- the voltage gain when the DC-DC converter 1 performs the first conversion operation is the value obtained by dividing the voltage V2 by the voltage V1.
- the voltage gain when controlled in the voltage double control mode is approximately twice the voltage gain when controlled in the full bridge control mode.
- the voltage gain when controlled in the half-bridge control mode is approximately 1/2.
- the voltage gain when controlled in the full-bridge control mode is approximately half the voltage gain when controlled in the voltage double control mode. become.
- the voltage gain when controlling in the full-bridge control mode is approximately double the voltage gain when controlling in the half-bridge control mode. .
- the full bridge control mode, the voltage doubler control mode, and the half bridge control mode are respectively referred to as the first full bridge control mode and the first double voltage control mode. Also referred to as voltage control mode and first half-bridge control mode.
- the control circuit 3 controls the DC-DC converter 1 in a second full bridge control mode, a second double voltage control mode, a second half bridge control mode, It is configured so that it can operate with
- the control circuit 3 controls the first semiconductor switching element Q1, the second semiconductor switching element Q2, the third semiconductor switching element Q3, and the fourth semiconductor switching element Q3 in the second full bridge control mode.
- the semiconductor switching element Q4 is turned off, and the fifth semiconductor switching element Q5, the sixth semiconductor switching element Q6, the seventh semiconductor switching element Q7, and the eighth semiconductor switching element Q8 are switched.
- the control circuit 3 turns off the first semiconductor switching element Q1, the second semiconductor switching element Q2, and the third semiconductor switching element Q3 in the second voltage doubler control mode.
- the fourth semiconductor switching element Q4 is turned on, and the fifth semiconductor switching element Q5, the sixth semiconductor switching element Q6, the seventh semiconductor switching element Q7, and the eighth semiconductor switching element Q8 are switched.
- the control circuit 3 turns off the seventh semiconductor switching element Q7, turns on the eighth semiconductor switching element Q8, and turns on the first semiconductor switching element Q7.
- Each of the switching element Q1, the second semiconductor switching element Q2, the third semiconductor switching element Q3, and the fourth semiconductor switching element Q4 is turned off, and each of the fifth semiconductor switching element Q5 and the sixth semiconductor switching element Q6 is turned off. Switching is performed so that the ON periods of the switching element Q5 and the sixth semiconductor switching element Q6 do not overlap.
- FIG. 7 shows the first semiconductor switching element Q1, the second semiconductor switching element Q2, the third semiconductor switching element Q3, and the fourth semiconductor switching element Q1 when the control circuit 3 controls the DC-DC converter 1 in the first full bridge control mode.
- a timing chart of the first control voltage VQ1, the second control voltage VQ2, the third control voltage VQ3 and the fourth control voltage VQ4 for each switching element Q4 is shown.
- the control circuit 3 repeats control of the first period T1 to the fourth period T4.
- the first period T1 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned on, the third semiconductor switching element Q3 is turned on, and the fourth semiconductor switching element Q4 is turned off.
- the second period T2 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned off.
- the third period T3 is a period in which the first semiconductor switching element Q1 is turned on, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned on.
- the fourth period T4 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned off.
- the current first flows through the path indicated by the dashed arrow in FIG. 9 during the second period T2. That is, in the DC-DC converter 1, the path of the second input/output terminal 12--the fourth diode D4--the first winding N1--the first inductor L1--the first capacitor C1--the first diode D1--the first input/output terminal 11 current flows through. Further, in the DC-DC converter 1, the path of the fourth input/output terminal T4--the sixth diode D6--the second capacitor C2--the second inductor L2--the second winding N2--the seventh diode D7--the third input/output terminal 13 current flows through.
- the current flowing through the second winding N2 of the transformer Tr1 crosses zero in the middle of the second period T2, and the direction of the current flowing through the second winding N2 reverses. Therefore, in the DC-DC converter 1, current flows through the path indicated by the dashed arrow in FIG. That is, in the DC-DC converter 1, the path of the second input/output terminal 12--the fourth diode D4--the first winding N1--the first inductor L1--the first capacitor C1--the first diode D1--the first input/output terminal 11 current flows through.
- the first semiconductor switching element Q1 and the fourth semiconductor switching element Q4 are on and the second semiconductor switching element Q2 and the third semiconductor switching element Q3 are off.
- the polarity of the voltage across the first winding N1 is different from the first period T1 in which the element Q4 is off and the second semiconductor switching element Q2 and the third semiconductor switching element Q3 are on.
- the polarities of the voltages across the line N2 are different.
- FIG. 12 shows the first semiconductor switching element Q1, the second semiconductor switching element Q2, the third semiconductor switching element Q3, and the fourth semiconductor switching element Q1 when the control circuit 3 controls the DC-DC converter 1 in the first double voltage control mode.
- a timing chart of the first control voltage VQ1, the second control voltage VQ2, the third control voltage VQ3 and the fourth control voltage VQ4 for each switching element Q4 is shown.
- the control circuit 3 repeats control of the first period T1 to the fourth period T4.
- the first period T1 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned on, the third semiconductor switching element Q3 is turned on, and the fourth semiconductor switching element Q4 is turned off.
- the second period T2 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned off.
- the third period T3 is a period in which the first semiconductor switching element Q1 is turned on, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned on.
- the fourth period T4 is a period in which the first semiconductor switching element Q1 is turned off, the second semiconductor switching element Q2 is turned off, the third semiconductor switching element Q3 is turned off, and the fourth semiconductor switching element Q4 is turned off.
- the current first flows through the path indicated by the dashed arrow in FIG. 15 during the third period T3. That is, in the DC-DC converter 1, the path of the second input/output terminal 12--the fourth diode D4--the first winding N1--the first inductor L1--the first capacitor C1--the first diode D1--the first input/output terminal 11 current flows through. Further, in the DC-DC converter 1, a current flows through the route of the sixth diode D6-second capacitor C2-second inductor L2-second winding N2.
- the current flowing through the first winding N1 and the current flowing through the second winding N2 of the transformer Tr1 cross each other in the middle of the third period T3.
- the directions of the currents flowing through N2 are opposite to each other. Therefore, in the DC-DC converter 1, current flows through the path indicated by the dashed arrow in FIG. That is, in the DC-DC converter 1, the first input/output terminal 11--first semiconductor switching element Q1--first capacitor C1--first inductor L1--first winding N1--fourth semiconductor switching element Q4--second input/output A current flows through the path of terminal 12 . Further, in the DC-DC converter 1, current flows through the path of the fourth input/output terminal T4-second winding N2-second inductor L2-second capacitor C2-fifth diode D5-third input/output terminal 13.
- the control circuit 3 repeats control in the first period and the second period.
- the first period is a period in which the first semiconductor switching element Q1 is turned on and the second semiconductor switching element Q2 is turned off.
- the second period is a period in which the first semiconductor switching element Q1 is turned off and the second semiconductor switching element Q2 is turned on.
- the first control mode is the first full bridge control mode
- the second control mode is the first double voltage control mode. More specifically, in the control circuit 3, the first control mode controls the first to fourth semiconductor switching elements Q1 to Q4 of the DC-DC converter 1 at a first drive frequency f1 (first switching frequency). It is a full bridge control mode, and the second control mode is a first double voltage control that controls the first to fourth semiconductor switching elements Q1 to Q4 of the DC-DC converter 1 at a second drive frequency f2 (second switching frequency). mode.
- the third control mode is first voltage doubler control for controlling the first to fourth semiconductor switching elements Q1 to Q4 of the DC-DC converter 1 at a third drive frequency f3 (third switching frequency). mode.
- FIG. 2 is a graph showing the relationship between the driving frequency of the DC-DC converter 1 and the voltage gain.
- the solid line A1 indicates the relationship between the voltage gain and the drive frequency in the first full-bridge control mode
- the dashed-dotted line A2 indicates the relationship between the voltage gain and the drive frequency in the first double voltage control mode.
- FIG. 2 also shows the first driving frequency f1, the second driving frequency f2, and the third driving frequency f3.
- the voltage gain tends to be relatively small at light load, and the overcurrent tends to be small.
- the control circuit 3 when both the first drive frequency f1 and the second drive frequency f2 are equal to or higher than a predetermined frequency (for example, 300 kHz), the control circuit 3 changes the operation mode from the first control mode to the second control mode in the above process. It may be configured to change to the second control mode without going through the third control mode.
- a predetermined frequency for example, 300 kHz
- the control circuit 3 controls the first to fourth semiconductor switching elements Q1 to Q4 of the DC-DC converter 1 at a first drive frequency f1 (first switching frequency) from the first full bridge control mode,
- first drive frequency f1 first switching frequency
- the first The first to fourth semiconductor switching elements Q1 to Q4 may be configured not to execute the first voltage doubler control mode in which the first to fourth semiconductor switching elements Q1 to Q4 are controlled at the third driving frequency f3 (third switching frequency).
- the predetermined frequency is, for example, such that the overcurrent generated when changing from the first control mode to the second control mode without passing through the third control mode is within 120% of the allowable current of the first capacitor C1 and the second capacitor C2. This is the driving frequency of the DC-DC converter 1 that can be accommodated.
- FIG. 3 is a graph showing the relationship between the driving frequency of the DC-DC converter 1 and the voltage gain.
- the solid line A1 indicates the relationship between the voltage gain and the drive frequency in the first full-bridge control mode
- the dashed-dotted line A2 indicates the relationship between the voltage gain and the drive frequency in the first double voltage control mode.
- FIG. 3 shows a first drive frequency f1 (eg, 310 kHz) and a second drive frequency f2 (eg, 1 MHz).
- the control circuit 3 causes the detection circuit 2 to detect the first predetermined change (increase change), which is the predetermined change in the output voltage (voltage V2) during operation in the second control mode. It may be arranged to change the operating mode from the second control mode to the first control mode when a different second predetermined change (decreasing change) is detected. In this case, if the detection circuit 2 uses the same threshold value Vt for the first predetermined change and the second predetermined change as shown in FIG. or when changing from the second control mode to the first control mode, chattering may occur due to repeated switching between the first control mode and the second control mode. In order to suppress the occurrence of such chattering, in power conversion system 100, as shown in FIG.
- the detection circuit 2 includes, for example, a resistive voltage dividing circuit, a first comparator whose output end of the resistive voltage dividing circuit is connected to a non-inverting input terminal, and a first comparator whose output end of the resistive voltage dividing circuit is connected to an inverting input terminal. a first reference voltage source connected to the inverting input terminal of the first comparator and outputting the first threshold Vt1; and a second reference voltage source connected to the non-inverting input terminal of the second comparator and outputting the second threshold Vt2. It may be a configuration including a source and a window comparator.
- the control circuit 3 operates in a first control mode in which the DC-DC converter 1 is controlled at the first drive frequency f1, and in a first control mode in which the DC-DC converter 1 is controlled at the first drive frequency f1.
- a second control mode in which control is performed at a second drive frequency f2 that is higher than the first drive frequency f1, and a third drive frequency f3 that is higher than the first drive frequency f1 and different from the second drive frequency f2. and a third control mode.
- the control circuit 3 is configured to change the operation mode from the first control mode to the second control mode when the detection circuit 2 detects a predetermined change in the output voltage (voltage V2) during operation in the first control mode.
- the control circuit 3 controls the DC-DC converter 1 in the third control mode before controlling the DC-DC converter 1 in the second control mode. - to control the DC converter 1;
- the power conversion system 100 according to the embodiment can suppress the occurrence of overcurrent. More specifically, the power conversion system 100 according to the embodiment prevents overcurrent from occurring when the control circuit 3 changes the control mode for controlling the DC-DC converter 1 from the first control mode to the second control mode. can be suppressed.
- the embodiment also discloses the following control method.
- the control method is a control method for the power conversion system 100.
- a power conversion system 100 includes a DC-DC converter 1 and a detection circuit 2 .
- the DC-DC converter 1 has a transformer Tr1, a first capacitor C1, and a second capacitor C2.
- the transformer Tr1 includes a first winding N1 and a second winding N2, and has a first leakage inductance on the first winding N1 side and a second leakage inductance on the second winding N2 side.
- the first capacitor C1 is for resonance and is connected to the first winding N1.
- a second capacitor C2 is for resonance and is connected to the second winding N2.
- Detection circuit 2 detects a change in the output voltage (voltage V2) of DC-DC converter 1 .
- the DC-DC converter 1 when a predetermined change in the output voltage (voltage V2) is detected by the detection circuit 2, the DC-DC converter 1 is switched from the first control mode in which the DC-DC converter 1 is controlled at the first drive frequency f1. at a second drive frequency f2 higher than the first drive frequency f1, before controlling the DC-DC converter 1 in the second control mode, the DC-DC converter 1 is controlled at the first drive frequency f2.
- the DC-DC converter 1 is controlled in a third control mode in which control is performed at a third drive frequency f3 higher than the drive frequency f1 and different from the second drive frequency f2.
- Modification 1 Since the circuit configuration of the power conversion system 100 according to Modification 1 of the embodiment is the same as that of the power conversion system 100 according to the embodiment, illustration and description thereof are omitted.
- the third drive frequency f3 when the control circuit 3 controls the DC-DC converter 1 is a frequency higher than the second drive frequency f2. It is different from the power conversion system 100 according to the embodiment in that
- the first drive frequency f1, the second drive frequency f2 and the third drive frequency f3 are 220 kHz, 250 kHz and 270 kHz, respectively.
- Numerical values of the first driving frequency f1, the second driving frequency f2, and the third driving frequency f3 are only examples, and are not limited to these numerical values. In FIG.
- FIG. 20 also shows the first driving frequency f1, the second driving frequency f2, and the third driving frequency f3.
- the third drive frequency f3 is higher than the second drive frequency f2.
- the occurrence of overcurrent can be suppressed more than when the frequency is lower than the second drive frequency f2.
- the power conversion system 100 according to Modification 2 of the embodiment includes the same DC-DC converter 1 as the power conversion system 100 according to the embodiment.
- the same components as those of the power conversion system 100 according to the embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the power conversion system 100 according to Modification 2 differs from the power conversion system 100 according to the embodiment in that a bidirectional DC-AC converter 4 is further provided.
- a bidirectional DC-AC converter 4 is connected to the DC-DC converter 1 .
- the bidirectional DC-AC converter 4 is connected across a fourth capacitor C4 included in the second storage circuit 16 of the DC-DC converter 1 .
- the bidirectional DC-AC converter 4 is a bidirectional DC-AC converter capable of converting a DC voltage into a three-phase AC voltage and converting a three-phase AC voltage into a DC voltage.
- the bidirectional DC-AC converter 4 has a first series circuit, a second series circuit, and a third series circuit connected across the fourth capacitor C4 of the DC-DC converter 1 .
- the first series circuit is a series circuit of a first high-side semiconductor switching element Q41 and a first low-side semiconductor switching element Q42.
- the second series circuit is a series circuit of a second high-side semiconductor switching element Q43 and a second low-side semiconductor switching element Q44.
- the third series circuit is a series circuit of a third high-side semiconductor switching element Q45 and a third low-side semiconductor switching element Q46.
- the bidirectional DC-AC converter 4 has a diode D41 and a diode D42 connected in anti-parallel to the first high-side semiconductor switching element Q41 and the first low-side semiconductor switching element Q42, respectively.
- the bidirectional DC-AC converter 4 has a diode D43 and a diode D44 connected in antiparallel to the second high side semiconductor switching element Q43 and the second low side semiconductor switching element Q44, respectively.
- the bidirectional DC-AC converter 4 has a diode D45 and a diode D46 connected in antiparallel to the third high side semiconductor switching element Q45 and the third low side semiconductor switching element Q46, respectively.
- a first high-side semiconductor switching element Q41, a first low-side semiconductor switching element Q42, a second high-side semiconductor switching element Q43, a second low-side semiconductor switching element Q44, and a third high-side semiconductor switching element of the bidirectional DC-AC converter 4 Q45 and the third low-side semiconductor switching element Q46 are controlled by a second control circuit different from the control circuit 3 (hereinafter also referred to as the first control circuit 3).
- the second control circuit is not limited to being provided separately from the first control circuit 3 , and may be provided in the first control circuit 3 .
- the power conversion system 100 according to Modification 2 further includes an AC filter 5 .
- the AC filter 5 is connected to the bi-directional DC-AC converter 4, for example, to a columnar transformer of a power system.
- a bidirectional DC-AC converter 4 is connected to a columnar transformer via an AC filter 5 or the like.
- AC filter 5 is a noise filter.
- the power conversion system 100 according to Modification 2 further includes an inductor L3, an inductor L4, and an inductor L5.
- the inductor L3 is connected between the AC filter 5 and the connection point between the first high-side semiconductor switching element Q41 and the first low-side semiconductor switching element Q42.
- the inductor L4 is connected between the AC filter 5 and the connection point between the second high-side semiconductor switching element Q43 and the second low-side semiconductor switching element Q44.
- the inductor L5 is connected between the AC filter 5 and the connection point between the third high-side semiconductor switching element Q45 and the third low-side semiconductor switching element Q46.
- the power conversion system 100 according to Modification 2 further includes a bidirectional chopper circuit 6 .
- the bidirectional chopper circuit 6 is connected across the third capacitor C3 included in the first storage circuit 15 of the DC-DC converter 1 .
- the bidirectional chopper circuit 6 is a step-up/step-down chopper circuit capable of step-down operation (step-down chopper operation) and step-up operation (step-up chopper operation).
- the bidirectional chopper circuit 6 includes a series circuit of a high-side semiconductor switching element Q61 and a low-side semiconductor switching element Q62 connected across the third capacitor C3.
- the bidirectional chopper circuit 6 also includes a diode D61 connected in anti-parallel to the high-side semiconductor switching element Q61, a diode D62 connected in anti-parallel to the low-side semiconductor switching element Q62, and a reactor L6.
- the reactor L6 is connected to a connection point between the high-side semiconductor switching element Q61 and the low-side semiconductor switching element Q62.
- the power conversion system 100 according to Modification 2 is a power conditioner compatible with the CHAdeMO (registered trademark) specification, and a storage battery of an electric vehicle is connected to a series circuit of a reactor L6 of a bidirectional chopper circuit 6 and a low-side semiconductor switching element Q62. is connected.
- the bidirectional chopper circuit 6 when performing a step-up operation for converting the voltage of the storage battery into a voltage higher than the voltage of the storage battery, the high-side semiconductor switching element Q61 is turned off, and the low-side semiconductor switching element Q62 is turned on and off at a high frequency. alternately repeated. Thereby, the bidirectional chopper circuit 6 functions as a boost chopper circuit.
- the bidirectional chopper circuit 6 when the bidirectional chopper circuit 6 performs a step-down operation to convert the voltage V1 between the first input/output terminal 11 and the second input/output terminal 12 of the DC-DC converter 1 to a voltage smaller than the voltage V1,
- the low-side semiconductor switching element Q62 is turned off, and the high-side semiconductor switching element Q61 is alternately turned on and off at high frequencies.
- the bidirectional chopper circuit 6 functions as a step-down chopper circuit.
- the high-side semiconductor switching element Q61 and the low-side semiconductor switching element Q62 of the bidirectional chopper circuit 6 are controlled by a third control circuit different from the first control circuit 3.
- the third control circuit is not limited to being provided separately from the first control circuit 3 , and may be provided in the first control circuit 3 .
- the power conversion system 100 according to Modification 2 includes the same DC-DC converter 1, detection circuit 2, and control circuit 3 as the power conversion system 100 according to the embodiment, it is possible to suppress the occurrence of overcurrent. .
- the first to eighth semiconductor switching elements Q1 to Q8 are not limited to n-channel MOSFETs, and may be p-channel MOSFETs.
- the MOSFETs forming the first to eighth semiconductor switching elements Q1 to Q8 are not limited to Si-based MOSFETs, and may be, for example, SiC-based MOSFETs.
- each of the first to eighth semiconductor switching elements Q1 to Q8 is not limited to a MOSFET, and may be, for example, a bipolar transistor, an IGBT (Insulated Gate Bipolar Transistor), or a GaN-based GIT (Gate Injection Transistor).
- the first control mode and the second control mode are the full bridge control mode and the voltage doubler control mode, respectively, but are not limited to this.
- the first control mode and the second control mode may be a half-bridge control mode and a voltage doubler control mode, or a half-bridge control mode and a full-bridge control mode.
- the first storage circuit 15 may have a series circuit of two capacitors instead of the third capacitor C3.
- the second storage circuit 16 may have a series circuit of two capacitors instead of the fourth capacitor C4.
- the circuit configuration of the DC-DC converter 1 is not limited to the circuit configuration in FIG. 1, and may be another circuit configuration.
- the DC-DC converter 1 has a bi-directional signal between the pair of the first input/output terminal 11 and the second input/output terminal 12 and the pair of the third input/output terminal 13 and the fourth input/output terminal 14.
- a unidirectional DC-DC converter capable of unidirectional voltage conversion may be used instead of the bidirectional DC-DC converter capable of voltage conversion at .
- the DC-DC converter 1 is not limited to the configuration including all of the first to eighth semiconductor switching elements Q1 to Q8, and includes six of the first to eighth semiconductor switching elements Q1 to Q8, for example. It may be a configuration.
- the DC-DC converter 1 is not limited to a configuration including all of the first to eighth diodes D1 to D8, and may be configured to include, for example, six of the first to eighth diodes D1 to D8. good. Also, the DC-DC converter 1 may be configured to include only one of the first storage circuit 15 and the second storage circuit 16 .
- circuit configuration of the bidirectional DC-AC converter 4 is not limited to the circuit configuration of FIG. 21, and may be another circuit configuration.
- circuit configuration of the bidirectional chopper circuit 6 is not limited to the circuit configuration of FIG. 21, and may be another circuit configuration.
- a power conversion system (100) includes a DC-DC converter (1), a detection circuit (2), and a control circuit (3).
- a DC-DC converter (1) has a transformer (Tr1), a first capacitor (C1), and a second capacitor (C2).
- the transformer (Tr1) includes a first winding (N1) and a second winding (N2), with a first leakage inductance on the side of the first winding (N1) and a second leakage on the side of the second winding (N2). have inductance.
- a first capacitor (C1) is for resonance and is connected to the first winding (N1).
- a second capacitor (C2) is for resonance and is connected to the second winding (N2).
- a detection circuit (2) detects a change in the output voltage (voltage V2) of the DC-DC converter (1).
- a control circuit (3) controls the DC-DC converter (1).
- the control circuit (3) has, as operation modes, a first control mode in which the DC-DC converter (1) is controlled at the first drive frequency (f1), and a DC-DC converter (1) in the first drive frequency (f1).
- a second control mode in which the DC-DC converter (1) is controlled at a second drive frequency (f2) higher than the first drive frequency (f1) and a third drive different from the second drive frequency (f2) and a third control mode in which control is performed at the frequency (f3).
- the control circuit (3) changes the operation mode from the first control mode to the second control mode when the detection circuit (2) detects a predetermined change in the output voltage (voltage V2) during operation in the first control mode. configured to change.
- the control circuit (3) performs a first Control the DC-DC converter (1) in three control modes.
- the power conversion system (100) according to the first aspect can suppress the occurrence of overcurrent.
- the predetermined change is the output voltage (voltage V2) from a first voltage value to a second voltage value different from the first voltage value It is a change to
- the DC-DC converter (1) includes a first input/output terminal (11), a second input/output terminal (12), a 3 input/output terminals (13) and a fourth input/output terminal (14), a series circuit of a first semiconductor switching element (Q1) and a second semiconductor switching element (Q2), and a third semiconductor switching element (Q3) A series circuit with a fourth semiconductor switching element (Q4), a series circuit with a fifth semiconductor switching element (Q5) and a sixth semiconductor switching element (Q6), a seventh semiconductor switching element (Q7) and an eighth semiconductor switching A series circuit with an element (Q8), a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6 ), a seventh diode (D7) and an eighth diode (D8), a first storage circuit
- a series circuit of a first semiconductor switching element (Q1) and a second semiconductor switching element (Q2) is connected between a first input/output terminal (11) and a second input/output terminal (12).
- a series circuit of the third semiconductor switching element (Q3) and the fourth semiconductor switching element (Q4) is connected between the first input/output terminal (11) and the second input/output terminal (12).
- a series circuit of the fifth semiconductor switching element (Q5) and the sixth semiconductor switching element (Q6) is connected between the third input/output terminal (13) and the fourth input/output terminal (14).
- a series circuit of the seventh semiconductor switching element (Q7) and the eighth semiconductor switching element (Q8) is connected between the third input/output terminal (13) and the fourth input/output terminal (14).
- a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7) and a 8 diodes (D8) include a first semiconductor switching element (Q1), a second semiconductor switching element (Q2), a third semiconductor switching element (Q3), a fourth semiconductor switching element (Q4), a fifth semiconductor switching element (Q5 ), the sixth semiconductor switching element (Q6), the seventh semiconductor switching element (Q7) and the eighth semiconductor switching element (Q8).
- the first storage circuit (15) is connected between the first input/output terminal (11) and the second input/output terminal (12).
- a second storage circuit (16) is connected between the third input/output terminal (13) and the fourth input/output terminal (14).
- the first winding (N1) is connected via the first capacitor (C1) to the connection point between the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2); It is connected between the connection point between the third semiconductor switching element (Q3) and the fourth semiconductor switching element (Q4).
- the second winding (N2) is connected via the second capacitor (C2) to the connection point between the fifth semiconductor switching element (Q5) and the sixth semiconductor switching element (Q6); It is connected between the connection point between the seventh semiconductor switching element (Q7) and the eighth semiconductor switching element (Q8).
- Each of the switching element (Q4), the fifth semiconductor switching element (Q5), the sixth semiconductor switching element (Q6), the seventh semiconductor switching element (Q7) and the eighth semiconductor switching element (Q8) is a MOSFET.
- a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a seventh diode (D7) and a 8 diodes (D8) include a first semiconductor switching element (Q1), a second semiconductor switching element (Q2), a third semiconductor switching element (Q3), a fourth semiconductor switching element (Q4), a fifth semiconductor switching element (Q5 ), the sixth semiconductor switching element (Q6), the seventh semiconductor switching element (Q7), and the eighth semiconductor switching element (Q8).
- a power conversion system (100) includes a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a 6 diode (D6), 7th diode (D7) and 8th diode (D8) do not need to be equipped with external diodes, and the first semiconductor switching element (Q1), the second semiconductor switching element (Q2), the 3rd A semiconductor switching element (Q3), a fourth semiconductor switching element (Q4), a fifth semiconductor switching element (Q5), a sixth semiconductor switching element (Q6), a seventh semiconductor switching element (Q7), and an eighth semiconductor switching element (Q8 ) is an IGBT, the cost can be reduced.
- the first control mode and the second control mode are a full bridge control mode and a double voltage control mode, respectively, or a half bridge control mode and voltage doubler control mode, or half bridge control mode and full bridge control mode.
- the full-bridge control mode the fifth semiconductor switching element (Q5), the sixth semiconductor switching element (Q6), the seventh semiconductor switching element (Q7), and the eighth semiconductor switching element (Q8) are turned off, and the first semiconductor switching element (Q1), the second semiconductor switching element (Q2), the third semiconductor switching element (Q3) and the fourth semiconductor switching element (Q4) are switched.
- the fifth semiconductor switching element (Q5), the sixth semiconductor switching element (Q6), and the seventh semiconductor switching element (Q7) are turned off, and the eighth semiconductor switching element (Q8) is turned on,
- Each of the first semiconductor switching element (Q1), the second semiconductor switching element (Q2), the third semiconductor switching element (Q3) and the fourth semiconductor switching element (Q4) is switched.
- the third semiconductor switching element (Q3) is turned off, the fourth semiconductor switching element (Q4) is turned on, the fifth semiconductor switching element (Q5), the sixth semiconductor switching element (Q6), Each of the seventh semiconductor switching element (Q7) and the eighth semiconductor switching element (Q8) is turned off, and each of the first semiconductor switching element (Q1) and the second semiconductor switching element (Q2) is switched to the first semiconductor switching element ( Q1) and the second semiconductor switching element (Q2) are switched so that their ON periods do not overlap.
- the third drive frequency (f3) is a frequency lower than the second drive frequency (f2).
- the third driving frequency (f3) is higher than the second driving frequency (f2).
- the control circuit (3) has a first drive frequency (f1) and a second drive frequency (f2) are equal to or higher than the predetermined frequency, the operation mode is changed from the first control mode to the second control mode without going through the third control mode in the above process.
- the control circuit (3) causes the detection circuit (2) to detect the output voltage during operation in the second control mode.
- (voltage V2) is configured to change the operation mode from the second control mode to the first control mode when a second predetermined change different from the first predetermined change, which is the predetermined change in voltage V2, is detected.
- the first threshold (Vt1) used for detecting the first predetermined change and the second threshold (Vt2) used for detecting the second predetermined change are made different.
- the power conversion system (100) according to the tenth aspect, in any one of the first to ninth aspects, further comprises a bidirectional DC-AC converter (4).
- a bi-directional DC-AC converter (4) is connected to the DC-DC converter (1).
- the control method according to the eleventh aspect is a control method for the power conversion system (100).
- a power conversion system (100) comprises a DC-DC converter (1) and a detection circuit (2).
- a DC-DC converter (1) has a transformer (Tr1), a first capacitor (C1), and a second capacitor (C2).
- the transformer (Tr1) includes a first winding (N1) and a second winding (N2), with a first leakage inductance on the side of the first winding (N1) and a second leakage on the side of the second winding (N2). have inductance.
- a first capacitor (C1) is for resonance and is connected to the first winding (N1).
- a second capacitor (C2) is for resonance and is connected to the second winding (N2).
- a detection circuit (2) detects a change in the output voltage (voltage V2) of the DC-DC converter (1).
- the control method starts from a first control mode in which the DC-DC converter (1) is controlled at a first drive frequency (f1) when a predetermined change in the output voltage (voltage V2) is detected by the detection circuit (2).
- the DC-DC converter (1) in the second control mode in a third control mode in which the DC-DC converter (1) is controlled at a third drive frequency (f3) higher than the first drive frequency (f1) and different from the second drive frequency (f2) before controlling the DC - Control the DC converter (1).
- the control method according to the eleventh aspect makes it possible to suppress the occurrence of overcurrent.
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Abstract
Description
以下では、実施形態に係る電力変換システム100について、図1~18、19A及び19Bに基づいて説明する。
電力変換システム100は、図1に示すように、DC-DCコンバータ1と、検出回路2と、制御回路3と、を備える。DC-DCコンバータ1は、トランスTr1と、第1キャパシタC1と、第2キャパシタC2と、を有する。トランスTr1は、第1巻線N1及び第2巻線N2を含み、第1巻線N1側の第1漏れインダクタンス及び第2巻線N2側の第2漏れインダクタンスを有する。図1は、トランスTr1の第1漏れインダクタンスを共振用の第1インダクタL1とし、第2漏れインダクタンスを共振用の第2インダクタL2として示した等価回路図である。第1キャパシタC1は、共振用であり、第1巻線N1に接続されている。等価回路図では、第1キャパシタC1は、第1インダクタL1を介して第1巻線N1に接続されている。第2キャパシタC2は、共振用であり、第2巻線N2に接続されている。等価回路図では、第2キャパシタC2は、第2インダクタL2を介して第2巻線N2に直列接続されている。検出回路2は、DC-DCコンバータ1の出力電圧の変化を検出する。制御回路3は、DC-DCコンバータ1を制御する。トランスTr1では、第2巻線N2の巻き数が、第1巻線N1の巻き数よりも大きい。トランスTr1では、第1巻線N1の巻き数と第2巻線N2の巻き数との比が、例えば、第1巻線N1の巻き数:第2巻線N2の巻き数=1:2であるが、これに限らない。
図1に示すように、電力変換システム100では、DC-DCコンバータ1は、トランスTr1を用いた絶縁型双方向DC-DCコンバータである。より詳細には、DC-DCコンバータ1は、第1キャパシタC1と第1インダクタL1及び第2インダクタL2と第2キャパシタC2とによる共振を利用するCLLC共振方式の双方向DC-DCコンバータである。
(3.1)第1フルブリッジ制御モードの場合
制御回路3がDC-DCコンバータ1を第1フルブリッジ制御モードで制御する場合のDC-DCコンバータ1の動作について図7~図11を参照しながら説明する。
また、制御回路3がDC-DCコンバータ1を第1倍電圧制御モードで制御する場合のDC-DCコンバータ1の動作について図12~図16を参照しながら説明する。
また、制御回路3がDC-DCコンバータ1を第1ハーフブリッジ制御モードで制御する場合のDC-DCコンバータ1の動作について図17~図18を参照しながら説明する。
制御回路3がDC-DCコンバータ1を第2フルブリッジ制御モードで制御する場合の動作については、第1フルブリッジ制御モードで制御する場合とDC-DCコンバータ1の入力電圧と出力電圧との関係が逆になるように第1~第8半導体スイッチング素子Q1~Q8が制御されるだけなので、説明を省略する。
制御回路3がDC-DCコンバータ1を第2倍電圧制御モードで制御する場合の動作については、第1倍電圧制御モードで制御する場合とDC-DCコンバータ1の入力電圧と出力電圧との関係が逆になるように第1~第8半導体スイッチング素子Q1~Q8が制御されるだけなので、説明を省略する。
制御回路3がDC-DCコンバータ1を第2ハーフブリッジ制御モードで制御する場合の動作については、第1ハーフブリッジ制御モードで制御する場合とDC-DCコンバータ1の入力電圧と出力電圧との関係が逆になるように第1~第8半導体スイッチング素子Q1~Q8が制御されるだけなので、説明を省略する。
制御回路3は、第1制御モードで動作中に検出回路2により出力電圧(電圧V2)の所定の変化が検出されると、動作モードを第1制御モードから第2制御モードへ変える(移行する)。制御回路3は、上記所定の変化が検出されたときに第1制御モードから第2制御モードへ変える過程において、第2制御モードでDC-DCコンバータ1を制御する前に、第3制御モードでDC-DCコンバータ1を制御する。
実施形態に係る電力変換システム100では、制御回路3は、動作モードとして、DC-DCコンバータ1を第1駆動周波数f1で制御する第1制御モードと、DC-DCコンバータ1を第1駆動周波数f1よりも高い第2駆動周波数f2で制御する第2制御モードと、DC-DCコンバータ1を第1駆動周波数f1よりも高く第2駆動周波数f2とは異なる第3駆動周波数f3で制御する第3制御モードと、を有する。制御回路3は、第1制御モードで動作中に検出回路2により出力電圧(電圧V2)の所定の変化が検出されると、動作モードを第1制御モードから第2制御モードへ変えるように構成されている。制御回路3は、所定の変化が検出されたときに第1制御モードから第2制御モードへ変える過程において、第2制御モードでDC-DCコンバータ1を制御する前に、第3制御モードでDC-DCコンバータ1を制御する。これにより、実施形態に係る電力変換システム100は、過電流の発生を抑制することが可能となる。より詳細には、実施形態に係る電力変換システム100は、制御回路3がDC-DCコンバータ1を制御する制御モードを第1制御モードから第2制御モードへ変えるときに過電流が発生するのを抑制することが可能となる。
上記の実施形態は、本開示の様々な実施形態の一つに過ぎない。上記の実施形態は、本開示の目的を達成できれば、設計等に応じて種々の変更が可能である。
実施形態の変形例1に係る電力変換システム100の回路構成は、実施形態に係る電力変換システム100と同じ回路構成なので、図示及び説明を省略する。
実施形態の変形例2に係る電力変換システム100は、図21に示すように、実施形態に係る電力変換システム100と同じDC-DCコンバータ1を備える。実施形態の変形例2に係る電力変換システム100に関し、実施形態に係る電力変換システム100と同様の構成要素については、同一の符号を付して説明を省略する。
例えば、第1~第8半導体スイッチング素子Q1~Q8は、nチャネルMOSFETに限らず、pチャネルMOSFETであってもよい。また、第1~第8半導体スイッチング素子Q1~Q8を構成するMOSFETは、Si系MOSFETに限らず、例えば、SiC系MOSFETであってもよい。また、第1~第8半導体スイッチング素子Q1~Q8の各々は、MOSFETに限らず、例えば、バイポーラトランジスタ、IGBT(Insulated Gate Bipolar Transistor)又はGaN系GIT(Gate Injection Transistor)であってもよい。
以上説明した実施形態等から本明細書には以下の態様が開示されている。
11 第1入出力端子
12 第2入出力端子
13 第3入出力端子
14 第4入出力端子
15 第1蓄積回路
16 第2蓄積回路
2 検出回路
3 制御回路
4 双方向DC-ACコンバータ
5 交流フィルタ
6 双方向チョッパ回路
C1 第1キャパシタ
C2 第2キャパシタ
C3 第3キャパシタ
C4 第4キャパシタ
D1 第1ダイオード
D2 第2ダイオード
D3 第3ダイオード
D4 第4ダイオード
D5 第5ダイオード
D6 第6ダイオード
D7 第7ダイオード
D8 第8ダイオード
f1 第1駆動周波数
f2 第2駆動周波数
f3 第3駆動周波数
L1 第1インダクタ
L2 第2インダクタ
Tr1 トランス
N1 第1巻線
N2 第2巻線
Q1 第1半導体スイッチング素子
Q2 第2半導体スイッチング素子
Q3 第3半導体スイッチング素子
Q4 第4半導体スイッチング素子
Q5 第5半導体スイッチング素子
Q6 第6半導体スイッチング素子
Q7 第7半導体スイッチング素子
Q8 第8半導体スイッチング素子
V1 電圧
V2 電圧
Vt1 第1閾値
Vt2 第2閾値
Claims (11)
- 第1巻線及び第2巻線を含み、前記第1巻線側の第1漏れインダクタンス及び前記第2巻線側の第2漏れインダクタンスを有するトランスと、前記第1巻線に接続されている共振用の第1キャパシタと、前記第2巻線に接続されている共振用の第2キャパシタと、を有するDC-DCコンバータと、
前記DC-DCコンバータの出力電圧の変化を検出する検出回路と、
前記DC-DCコンバータを制御する制御回路と、を備え、
前記制御回路は、動作モードとして、
前記DC-DCコンバータを第1駆動周波数で制御する第1制御モードと、
前記DC-DCコンバータを前記第1駆動周波数よりも高い第2駆動周波数で制御する第2制御モードと、
前記DC-DCコンバータを前記第1駆動周波数よりも高く前記第2駆動周波数とは異なる第3駆動周波数で制御する第3制御モードと、を有し、
前記制御回路は、前記第1制御モードで動作中に前記検出回路により前記出力電圧の所定の変化が検出されると、前記動作モードを前記第1制御モードから前記第2制御モードへ変えるように構成され、
前記制御回路は、前記所定の変化が検出されたときに前記第1制御モードから前記第2制御モードへ変える過程において、前記第2制御モードで前記DC-DCコンバータを制御する前に、前記第3制御モードで前記DC-DCコンバータを制御する、
電力変換システム。 - 前記所定の変化は、前記出力電圧の、第1電圧値から前記第1電圧値とは異なる第2電圧値への変化である、
請求項1に記載の電力変換システム。 - 前記DC-DCコンバータは、
第1入出力端子、第2入出力端子、第3入出力端子及び第4入出力端子と、
前記第1入出力端子と前記第2入出力端子との間に接続されている、第1半導体スイッチング素子と第2半導体スイッチング素子との直列回路と、
前記第1入出力端子と前記第2入出力端子との間に接続されている、第3半導体スイッチング素子と第4半導体スイッチング素子との直列回路と、
前記第3入出力端子と前記第4入出力端子との間に接続されている、第5半導体スイッチング素子と第6半導体スイッチング素子との直列回路と、
前記第3入出力端子と前記第4入出力端子との間に接続されている、第7半導体スイッチング素子と第8半導体スイッチング素子との直列回路と、
前記第1半導体スイッチング素子、前記第2半導体スイッチング素子、前記第3半導体スイッチング素子、前記第4半導体スイッチング素子、前記第5半導体スイッチング素子、前記第6半導体スイッチング素子、前記第7半導体スイッチング素子及び前記第8半導体スイッチング素子にそれぞれ逆並列接続されている、第1ダイオード、第2ダイオード、第3ダイオード、第4ダイオード、第5ダイオード、第6ダイオード、第7ダイオード及び第8ダイオードと、
前記第1入出力端子と前記第2入出力端子との間に接続されている第1蓄積回路と、
前記第3入出力端子と前記第4入出力端子との間に接続されている第2蓄積回路と、を更に有し、
前記DC-DCコンバータでは、
前記第1巻線が前記第1キャパシタを介して、前記第1半導体スイッチング素子と前記第2半導体スイッチング素子との接続点と、前記第3半導体スイッチング素子と前記第4半導体スイッチング素子との接続点との間に接続され、
前記第2巻線が前記第2キャパシタを介して、前記第5半導体スイッチング素子と前記第6半導体スイッチング素子との接続点と、前記第7半導体スイッチング素子と前記第8半導体スイッチング素子との接続点との間に接続されている、
請求項1又は2に記載の電力変換システム。 - 前記第1半導体スイッチング素子、前記第2半導体スイッチング素子、前記第3半導体スイッチング素子、前記第4半導体スイッチング素子、前記第5半導体スイッチング素子、前記第6半導体スイッチング素子、前記第7半導体スイッチング素子及び前記第8半導体スイッチング素子の各々は、MOSFETであり、
前記第1ダイオード、前記第2ダイオード、前記第3ダイオード、前記第4ダイオード、前記第5ダイオード、前記第6ダイオード、前記第7ダイオード及び前記第8ダイオードは、前記第1半導体スイッチング素子、前記第2半導体スイッチング素子、前記第3半導体スイッチング素子、前記第4半導体スイッチング素子、前記第5半導体スイッチング素子、前記第6半導体スイッチング素子、前記第7半導体スイッチング素子及び前記第8半導体スイッチング素子それぞれの前記MOSFETの寄生ダイオードである、
請求項3に記載の電力変換システム。 - 前記第1制御モードと前記第2制御モードは、それぞれ、フルブリッジ制御モードと倍電圧制御モード、又は、ハーフブリッジ制御モードと倍電圧制御モード、又は、ハーフブリッジ制御モードとフルブリッジ制御モードであり、
前記フルブリッジ制御モードでは、
前記第5半導体スイッチング素子、前記第6半導体スイッチング素子、前記第7半導体スイッチング素子及び前記第8半導体スイッチング素子をオフ状態とし、
前記第1半導体スイッチング素子、前記第2半導体スイッチング素子、前記第3半導体スイッチング素子及び前記第4半導体スイッチング素子それぞれをスイッチングさせ、
前記倍電圧制御モードでは、
前記第5半導体スイッチング素子、前記第6半導体スイッチング素子及び前記第7半導体スイッチング素子をオフ状態とし、
前記第8半導体スイッチング素子をオン状態とし、
前記第1半導体スイッチング素子、前記第2半導体スイッチング素子、前記第3半導体スイッチング素子及び前記第4半導体スイッチング素子それぞれをスイッチングさせ、
前記ハーフブリッジ制御モードでは、
前記第3半導体スイッチング素子をオフ状態とし、前記第4半導体スイッチング素子をオン状態とし、
前記第5半導体スイッチング素子、前記第6半導体スイッチング素子、前記第7半導体スイッチング素子及び前記第8半導体スイッチング素子の各々をオフ状態とし、
前記第1半導体スイッチング素子及び前記第2半導体スイッチング素子それぞれを、前記第1半導体スイッチング素子及び前記第2半導体スイッチング素子それぞれのオン期間が重複しないように、スイッチングさせる、
請求項3又は4に記載の電力変換システム。 - 前記第3駆動周波数は、前記第2駆動周波数よりも低い周波数である、
請求項1~5のいずれか一項に記載の電力変換システム。 - 前記第3駆動周波数は、前記第2駆動周波数よりも高い周波数である、
請求項1~5のいずれか一項に記載の電力変換システム。 - 前記制御回路は、前記第1駆動周波数と前記第2駆動周波数との両方が所定周波数以上の場合、前記過程において、前記動作モードを前記第1制御モードから前記第2制御モードへ前記第3制御モードを経由せずに変える、
請求項1~7のいずれか一項に記載の電力変換システム。 - 前記制御回路は、
前記第2制御モードで動作中に前記検出回路により前記出力電圧の前記所定の変化である第1の所定の変化とは異なる第2の所定の変化が検出されると、前記動作モードを前記第2制御モードから前記第1制御モードへ変えるように構成され、
前記検出回路は、前記第1の所定の変化の検出に用いる第1閾値と、前記第2の所定の変化の検出に用いる第2閾値と、を異ならせてある、
請求項1~8のいずれか一項に記載の電力変換システム。 - 前記DC-DCコンバータに接続されている双方向DC-ACコンバータを更に備える、
請求項1~9のいずれか一項に記載の電力変換システム。 - 第1巻線及び第2巻線を含み、前記第1巻線側の第1漏れインダクタンス及び前記第2巻線側の第2漏れインダクタンスを有するトランスと、前記第1巻線に接続されている共振用の第1キャパシタと、前記第2巻線に接続されている共振用の第2キャパシタと、を有するDC-DCコンバータと、
前記DC-DCコンバータの出力電圧の変化を検出する検出回路と、を備える電力変換システムの制御方法であって、
前記検出回路により前記出力電圧の所定の変化が検出されたときに、前記DC-DCコンバータを第1駆動周波数で制御する第1制御モードから、前記DC-DCコンバータを前記第1駆動周波数よりも高い第2駆動周波数で制御する第2制御モードへ変える過程において、前記第2制御モードで前記DC-DCコンバータを制御する前に、前記DC-DCコンバータを前記第1駆動周波数よりも高く前記第2駆動周波数とは異なる第3駆動周波数で制御する第3制御モードで前記DC-DCコンバータを制御する、
制御方法。
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JP2006197753A (ja) * | 2005-01-14 | 2006-07-27 | Sony Corp | スイッチング電源回路 |
WO2014103105A1 (ja) * | 2012-12-28 | 2014-07-03 | パナソニック株式会社 | Dc/dcコンバータ |
JP2016220347A (ja) * | 2015-05-18 | 2016-12-22 | 東芝デジタルメディアエンジニアリング株式会社 | 電流共振型dc−dcコンバータ |
JP2018023236A (ja) * | 2016-08-04 | 2018-02-08 | 株式会社日立製作所 | 高電圧発生装置、およびそれを搭載するx線画像診断装置 |
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JP2006197753A (ja) * | 2005-01-14 | 2006-07-27 | Sony Corp | スイッチング電源回路 |
WO2014103105A1 (ja) * | 2012-12-28 | 2014-07-03 | パナソニック株式会社 | Dc/dcコンバータ |
JP2016220347A (ja) * | 2015-05-18 | 2016-12-22 | 東芝デジタルメディアエンジニアリング株式会社 | 電流共振型dc−dcコンバータ |
JP2018023236A (ja) * | 2016-08-04 | 2018-02-08 | 株式会社日立製作所 | 高電圧発生装置、およびそれを搭載するx線画像診断装置 |
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