WO2022168523A1 - 検出装置及び検出装置の製造方法 - Google Patents

検出装置及び検出装置の製造方法 Download PDF

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Publication number
WO2022168523A1
WO2022168523A1 PCT/JP2022/000245 JP2022000245W WO2022168523A1 WO 2022168523 A1 WO2022168523 A1 WO 2022168523A1 JP 2022000245 W JP2022000245 W JP 2022000245W WO 2022168523 A1 WO2022168523 A1 WO 2022168523A1
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WIPO (PCT)
Prior art keywords
substrate
light
photodiodes
detection device
optical filter
Prior art date
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Ceased
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PCT/JP2022/000245
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English (en)
French (fr)
Japanese (ja)
Inventor
和己 松永
盛右 新木
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Japan Display Inc
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Japan Display Inc
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Priority to JP2022579397A priority Critical patent/JP7637162B2/ja
Publication of WO2022168523A1 publication Critical patent/WO2022168523A1/ja
Priority to US18/227,785 priority patent/US20230378383A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • the present invention relates to a detection device and a method for manufacturing the detection device.
  • Patent Document 1 describes a detection device having a plurality of PIN photodiodes.
  • an image pickup device having a photodetector that detects light, a display layer, and a lens array in which a plurality of lenses are arranged (described as a condensing means that refracts light in Patent Document 2).
  • a device is described.
  • the imaging device of Patent Document 2 is provided with an optical filter layer (a collimator in Patent Document 2) that removes oblique light components incident on the photodetector.
  • the amount of light incident on the photodetector fluctuates, possibly reducing detection accuracy.
  • An object of the present invention is to provide a detection device capable of improving detection accuracy and a method for manufacturing the detection device.
  • a detection device of one embodiment of the present invention includes a first substrate, a plurality of photodiodes provided on the first substrate, a plurality of light-transmitting regions provided to overlap each of the plurality of photodiodes,
  • the optical filter layer includes a light-shielding region provided between the plurality of light-transmitting regions, and a protruding portion that protrudes from a surface of the light-shielding region facing the first substrate.
  • a method for manufacturing a detection device includes steps of forming a plurality of photodiodes on a first substrate; a step of forming an optical filter layer including a light shielding region and a protrusion projecting above the light shielding region; and bonding the first substrate and the second substrate together so that the protrusion is positioned therebetween.
  • FIG. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to an embodiment.
  • 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 1.
  • FIG. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 2.
  • FIG. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 3.
  • FIG. FIG. 2 is a plan view showing the detection device according to the embodiment.
  • FIG. 3 is a block diagram showing a configuration example of the detection device according to the embodiment.
  • FIG. 4 is a circuit diagram showing a sensing element.
  • FIG. 5 is a cross-sectional view taken along line V-V' of FIG.
  • FIG. 6 is a cross-sectional view schematically showing a photodiode.
  • FIG. 7 is a plan view showing an optical filter layer.
  • FIG. 8 is an explanatory diagram for schematically explaining the positional relationship between the projecting portion of the optical filter layer, the photodiodes of the array substrate, and the sensor insulating film.
  • 9 is a cross-sectional view taken along line IX-IX' of FIG. 7.
  • FIG. 10 is a usage example of the detection device, and is an explanatory diagram for explaining the detection device arranged facing the finger.
  • FIG. 11 is an explanatory diagram for explaining an example of a manufacturing method of the detection device.
  • FIG. 12 is a cross-sectional view schematically showing the detection device according to the second embodiment.
  • FIG. 13 is a cross-sectional view schematically showing the detection device according to the third embodiment.
  • FIG. 14 is an explanatory diagram for schematically explaining the positional relationship between the projecting portion of the optical filter layer, the photodiodes of the array substrate, and the sensor insulating film of the detection device according to the fourth embodiment.
  • FIG. 15 is a cross-sectional view schematically showing the detection device according to the fourth embodiment.
  • FIG. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to an embodiment.
  • 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 1.
  • FIG. 1C is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 2.
  • FIG. 1D is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 3.
  • FIG. 1A is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to an embodiment.
  • 1B is a cross-sectional view showing a schematic cross-sectional configuration of a detection device with an illumination device having a detection device according to Modification 1.
  • FIG. 1C is
  • the detection device 120 with lighting device has a detection device 1 and a lighting device 121 .
  • the detection device 1 has an array substrate 2 , an optical filter 7 , an adhesive layer 125 and a cover member 122 . That is, in the direction perpendicular to the surface of the array substrate 2, the array substrate 2, the optical filter 7, the adhesive layer 125, and the cover member 122 are laminated in this order. Note that the cover member 122 of the detection device 1 can be replaced with the illumination device 121 as described later.
  • the adhesive layer 125 may adhere the optical filter 7 and the cover member 122, and may have a structure in which the adhesive layer 125 does not exist in the area corresponding to the detection area AA.
  • the adhesive layer 125 adheres the cover member 122 and the optical filter 7 in the area corresponding to the peripheral area GA outside the detection area AA. Also, the adhesive layer 125 provided in the detection area AA may simply be called a protective layer for the optical filter 7 .
  • the illumination device 121 uses, for example, the cover member 122 as a light guide plate provided at a position corresponding to the detection area AA of the detection device 1, and a plurality of light guide plates arranged at one end or both ends of the cover member 122.
  • a so-called sidelight type front light having the light source 123 may be used.
  • the cover member 122 has a light irradiation surface 121 a that irradiates light, and is one component of the illumination device 121 .
  • the light L1 is emitted from the light emitting surface 121a of the cover member 122 toward the finger Fg to be detected.
  • a light source for example, a light emitting diode (LED) that emits light of a predetermined color is used.
  • the illumination device 121 may have a light source (for example, an LED) provided directly below the detection area AA of the detection device 1.
  • the illumination device 121 provided with the light source It also functions as a cover member 122 .
  • the lighting device 121 is not limited to the example of FIG. 1B, and may be provided on the side or above the cover member 122 as shown in FIG. 1C. L1 may be irradiated.
  • the illumination device 121 may be a so-called direct backlight that has a light source (for example, an LED) provided in the detection area of the detection device 1 .
  • a light source for example, an LED
  • the light L1 emitted from the illumination device 121 is reflected as light L2 by the finger Fg, which is the object of detection.
  • the detection device 1 detects the unevenness (for example, fingerprint) of the surface of the finger Fg by detecting the light L2 reflected by the finger Fg. Furthermore, the detecting device 1 may detect information about the living body by detecting the light L2 reflected inside the finger Fg in addition to detecting the fingerprint.
  • the information about the living body is, for example, an image of blood vessels such as veins, a pulse, a pulse wave, and the like.
  • the color of the light L1 from the illumination device 121 may be changed according to the detection target.
  • the cover member 122 is a member for protecting the array substrate 2 and the optical filters 7 and covers the array substrate 2 and the optical filters 7 .
  • the lighting device 121 may also serve as the cover member 122 .
  • the cover member 122 is, for example, a glass substrate.
  • the cover member 122 is not limited to a glass substrate, and may be a resin substrate or the like. Also, the cover member 122 may not be provided. In this case, a protective layer such as an insulating film is provided on the surface of the array substrate 2 and the optical filter 7 , and the finger Fg contacts the protective layer of the detection device 1 .
  • the detection device 120 with an illumination device may be provided with a display panel instead of the illumination device 121, as shown in FIG. 1B.
  • the display panel may be, for example, an organic EL display panel (OLED: Organic Light Emitting Diode) or an inorganic EL display (micro LED, mini LED).
  • the display panel may be a liquid crystal display panel (LCD: Liquid Crystal Display) using a liquid crystal element as a display element, or an electrophoretic display panel (EPD: Electrophoretic Display) using an electrophoretic element as a display element. good. Even in this case, it is possible to detect the fingerprint of the finger Fg and information related to the living body based on the light L2 reflected by the finger Fg from the display light (light L1) emitted from the display panel.
  • LCD Liquid Crystal Display
  • EPD Electrophoretic Display
  • FIG. 2 is a plan view showing the detection device according to the embodiment.
  • the first direction Dx shown in FIG. 2 and below is one direction in a plane parallel to the first substrate 21 .
  • the second direction Dy is one direction in a plane parallel to the first substrate 21 and perpendicular to the first direction Dx. Note that the second direction Dy may not be perpendicular to the first direction Dx, but may intersect with it.
  • a third direction Dz is a direction orthogonal to the first direction Dx and the second direction Dy, and is a normal direction of the first substrate 21 .
  • plane view refers to the positional relationship when viewed from the third direction Dz.
  • the detection device 1 includes an array substrate 2 (first substrate 21), a sensor section 10, a scanning line drive circuit 15, a signal line selection circuit 16, a detection circuit 48, and a control circuit 102. and a power supply circuit 103 .
  • a control board 101 is electrically connected to the first board 21 via a wiring board 110 .
  • the wiring board 110 is, for example, a flexible printed board or a rigid board.
  • a detection circuit 48 is provided on the wiring board 110 .
  • a control circuit 102 and a power supply circuit 103 are provided on the control board 101 .
  • the control circuit 102 is, for example, an FPGA (Field Programmable Gate Array).
  • the control circuit 102 supplies control signals to the sensor section 10 , the scanning line driving circuit 15 and the signal line selection circuit 16 to control the operation of the sensor section 10 .
  • the power supply circuit 103 supplies voltage signals such as the power supply potential VDD and the reference potential VCOM (see FIG. 4) to the sensor section 10, the scanning line driving circuit 15, and the signal line selecting circuit 16.
  • FIG. although the case where the detection circuit 48 is arranged on the wiring substrate 110 is illustrated in the present embodiment, the present invention is not limited to this.
  • the detection circuit 48 may be arranged on the first substrate 21 .
  • the first substrate 21 has a detection area AA and a peripheral area GA.
  • the detection area AA and the peripheral area GA extend in a plane direction parallel to the first substrate 21 .
  • Each element (detection element 3) of the sensor section 10 is provided in the detection area AA.
  • the peripheral area GA is an area outside the detection area AA, and is an area where each element (detection element 3) is not provided. That is, the peripheral area GA is an area between the outer circumference of the detection area AA and the edge of the first substrate 21 .
  • a scanning line driving circuit 15 and a signal line selecting circuit 16 are provided in the peripheral area GA.
  • the scanning line driving circuit 15 is provided in a region extending along the second direction Dy in the peripheral region GA.
  • the signal line selection circuit 16 is provided in an area extending along the first direction Dx in the peripheral area GA, and is provided between the sensor section 10 and the detection circuit 48 .
  • the plurality of detection elements 3 of the sensor section 10 are optical sensors each having a photodiode 30 as a sensor element.
  • the photodiode 30 is a photoelectric conversion element, and outputs an electric signal according to the light with which it is irradiated. More specifically, the photodiode 30 is an OPD (Organic Photo Diode). Alternatively, the photodiode 30 may be a PIN (Positive Intrinsic Negative) photodiode.
  • the detection elements 3 are arranged in a matrix in the detection area AA.
  • the photodiodes 30 included in the plurality of detection elements 3 perform detection according to gate drive signals (eg, reset control signal RST, readout control signal RD) supplied from the scanning line drive circuit 15 .
  • the plurality of photodiodes 30 output an electrical signal corresponding to the light irradiated to each to the signal line selection circuit 16 as the detection signal Vdet.
  • the detection device 1 detects information about the living body based on detection signals Vdet from the multiple photodiodes 30 .
  • FIG. 3 is a block diagram showing a configuration example of the detection device according to the embodiment.
  • the detection device 1 further has a detection control circuit 11 and a detection section 40 .
  • a part or all of the functions of the detection control circuit 11 are included in the control circuit 102 .
  • a part or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 102 .
  • the detection control circuit 11 is a circuit that supplies control signals to the scanning line drive circuit 15, the signal line selection circuit 16, and the detection section 40, respectively, and controls their operations.
  • the detection control circuit 11 supplies various control signals such as a start signal STV and a clock signal CK to the scanning line driving circuit 15 .
  • the detection control circuit 11 also supplies various control signals such as the selection signal ASW to the signal line selection circuit 16 .
  • the scanning line drive circuit 15 is a circuit that drives a plurality of scanning lines (read control scanning line GLrd, reset control scanning line GLrst (see FIG. 4)) based on various control signals.
  • the scanning line driving circuit 15 selects a plurality of scanning lines sequentially or simultaneously, and supplies gate driving signals (eg, reset control signal RST, read control signal RD) to the selected scanning lines. Thereby, the scanning line driving circuit 15 selects a plurality of photodiodes 30 connected to the scanning lines.
  • the signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of output signal lines SL (see FIG. 4).
  • the signal line selection circuit 16 is, for example, a multiplexer.
  • the signal line selection circuit 16 connects the selected output signal line SL and the detection circuit 48 based on the selection signal ASW supplied from the detection control circuit 11 . Thereby, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode 30 to the detection section 40 .
  • the detection unit 40 includes a detection circuit 48 , a signal processing circuit 44 , a coordinate extraction circuit 45 , a storage circuit 46 and a detection timing control circuit 47 .
  • the detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 to operate synchronously based on the control signal supplied from the detection control circuit 11.
  • the detection circuit 48 is, for example, an analog front end circuit (AFE: Analog Front End).
  • the detection circuit 48 is a signal processing circuit having at least the functions of the detection signal amplification circuit 42 and the A/D conversion circuit 43 .
  • the detection signal amplifier circuit 42 is a circuit that amplifies the detection signal Vdet, and is, for example, an integration circuit.
  • the A/D conversion circuit 43 converts the analog signal output from the detection signal amplification circuit 42 into a digital signal.
  • the signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor section 10 based on the output signal of the detection circuit 48 .
  • the signal processing circuit 44 can detect the unevenness of the finger Fg or the surface of the palm based on the signal from the detection circuit 48 when the finger Fg contacts or approaches the detection surface.
  • the signal processing circuit 44 may detect information about the living body based on the signal from the detection circuit 48 .
  • the biological information includes, for example, a finger Fg, a blood vessel image of the palm, a pulse wave, a pulse rate, a blood oxygen saturation level, and the like.
  • the storage circuit 46 temporarily stores the signal calculated by the signal processing circuit 44 .
  • the storage circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.
  • the coordinate extraction circuit 45 is a logic circuit that obtains the detected coordinates of the unevenness of the surface of the finger Fg or the like when the signal processing circuit 44 detects contact or proximity of the finger Fg. Also, the coordinate extraction circuit 45 is a logic circuit for obtaining the detected coordinates of the blood vessels of the finger Fg and the palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from the detection elements 3 of the sensor section 10 to generate two-dimensional information indicating the shape of the unevenness on the surface of the finger Fg or the like. Note that the coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output Vo without calculating the detection coordinates.
  • FIG. 4 is a circuit diagram showing a sensing element.
  • the detection element 3 has a photodiode 30, a reset transistor Mrst, a readout transistor Mrd and a source follower transistor Msf.
  • a reset transistor Mrst, a read transistor Mrd, and a source follower transistor Msf are provided corresponding to one photodiode 30 .
  • the reset transistor Mrst, the read transistor Mrd, and the source follower transistor Msf are each composed of an n-type TFT (Thin Film Transistor).
  • the invention is not limited to this, and each transistor may be composed of a p-type TFT.
  • a reference potential VCOM is applied to the anode of the photodiode 30 .
  • the cathode of photodiode 30 is connected to node N1.
  • the node N1 is connected to the capacitive element Cs, one of the source and drain of the reset transistor Mrst, and the gate of the source follower transistor Msf. Furthermore, the node N1 has a parasitic capacitance Cp.
  • the signal (charge) output from the photodiode 30 is accumulated in the capacitive element Cs.
  • the capacitive element Cs is, for example, a capacitor formed between the upper conductive layer 35 connected to the photodiode 30 and the lower conductive layer 34 (see FIG. 6).
  • the parasitic capacitance Cp is a capacitance added to the capacitive element Cs, and is a capacitance formed between various wirings and electrodes provided on the array substrate 2 .
  • the gate of the reset transistor Mrst is connected to the reset control scanning line GLrst.
  • a reset potential Vrst is supplied to the other of the source and the drain of the reset transistor Mrst.
  • the reset transistor Mrst is turned on (conductive state) in response to the reset control signal RST, the potential of the node N1 is reset to the reset potential Vrst.
  • the reference potential VCOM has a potential lower than the reset potential Vrst, and the photodiode 30 is reverse bias driven.
  • the source follower transistor Msf is connected between the terminal supplied with the power supply potential VDD and the read transistor Mrd (node N2).
  • the gate of source follower transistor Msf is connected to node N1.
  • a signal (charge) generated in the photodiode 30 is supplied to the gate of the source follower transistor Msf.
  • the source follower transistor Msf outputs a voltage signal corresponding to the signal (charge) generated in the photodiode 30 to the readout transistor Mrd.
  • the read transistor Mrd is connected between the source of the source follower transistor Msf (node N2) and the output signal line SL (node N3).
  • a gate of the read transistor Mrd is connected to the read control scanning line GLrd.
  • the reset transistor Mrst and the read transistor Mrd each have a so-called double gate structure in which two transistors are connected in series.
  • the reset transistor Mrst and the read transistor Mrd may have a single-gate structure, or may have a multi-gate structure in which three or more transistors are connected in series.
  • the circuit of one detection element 3 is not limited to the configuration having three transistors, the reset transistor Mrst, the source follower transistor Msf, and the read transistor Mrd.
  • the sensing element 3 may have two, four or more transistors.
  • FIG. 5 is a cross-sectional view taken along line V-V' of FIG.
  • FIG. 5 schematically shows the laminated structure of the array substrate 2, the photodiodes 30 and the optical filters 7. As shown in FIG.
  • the array substrate 2 has a protective film 201, an adhesive layer 203, a first substrate 21, a TFT layer 24, a plurality of photodiodes 30 and a sensor insulating film 25.
  • the first substrate 21 is attached onto the protective film 201 with an adhesive layer 203 interposed therebetween.
  • a resin substrate such as polyimide is used for the first substrate 21 .
  • the adhesive layer 203 is, for example, an optical adhesive film (OCA: Optical Clear Adhesive).
  • the direction from the first substrate 21 to the second substrate 71 is referred to as “upper” or simply “upper”. Also, the direction from the second substrate 71 toward the first substrate 21 is referred to as “lower side” or simply “lower side.” Also, “planar view” refers to the positional relationship when viewed from a direction perpendicular to the first substrate 21 .
  • the TFT layer 24 is provided on the first substrate 21 .
  • the TFT layer 24 is a layer in which various transistors such as a reset transistor Mrst, a read transistor Mrd, and a source follower transistor Msf (see FIG. 4) and wires connected to these are formed.
  • a plurality of photodiodes 30 are arranged on the TFT layer 24 of the array substrate 2 .
  • a sensor insulating film 25 is provided on the TFT layer 24 to cover the plurality of photodiodes 30 .
  • the sensor insulating film 25 is, for example, an inorganic insulating film, and is provided as a sealing film that prevents moisture from entering the plurality of photodiodes 30 from the outside. Note that the sensor insulating film 25 is not limited to a single layer, and may have a structure in which a plurality of insulating films are laminated.
  • FIG. 6 is a cross-sectional view schematically showing a photodiode.
  • the photodiode 30 has a hole transport layer 31 , an active layer 32 and an electron transport layer 33 .
  • the photodiode 30 is an OPD (Organic Photo Diode) in which the active layer 32 is made of an organic semiconductor.
  • a lower conductive layer 34, a hole transport layer 31, an active layer 32, an electron transport layer 33, and an upper conductive layer 35 are laminated on the TFT layer 24 in this order.
  • the lower conductive layer 34 is made of a metal material such as aluminum (Al).
  • the upper conductive layer 35 is made of, for example, a conductive material having translucency such as ITO (Indium Tin Oxide).
  • a sensor insulating film 25 is provided to cover the upper conductive layer 35 .
  • FIG. 6 shows an example in which the photodiode 30 is an OPD made of an organic semiconductor, it is not limited to this.
  • the photodiode 30 may be a PIN photodiode made of an inorganic semiconductor.
  • the optical filter 7 is provided above the multiple photodiodes 30 .
  • the optical filter 7 is an optical element that transmits, toward the photodiode 30, the component traveling in the third direction Dz of the light L2 reflected by the object to be detected such as the finger Fg, and shields the component traveling in the oblique direction. is.
  • the optical filter 7 is also called collimating aperture or collimator.
  • the optical filter 7 has a protective film 202 , an adhesive layer 204 , a second substrate 71 , a barrier film 74 , an optical filter layer 75 and a seal portion 27 .
  • the optical filter 7 is attached to the array substrate 2 with an adhesive layer 26 and a seal portion 27 interposed therebetween.
  • the optical filter layer 75 of the optical filter 7 is provided on the plurality of photodiodes 30 and the sensor insulating film 25 via the adhesive layer 26 .
  • the adhesive layer 26 is, for example, an optically transparent resin (OCR: Optical Clear Resin) that is a liquid UV curable resin.
  • the seal portion 27 is provided in the peripheral portion of the peripheral area GA, and seals between the optical filter 7 (optical filter layer 75) and the array substrate 2 (sensor insulating film 25). Furthermore, the terminal protective film 112 is provided to cover the region between the peripheral portion of the optical filter 7 and the wiring board 110 .
  • the optical filter layer 75 has a plurality of light transmitting regions 78 , a light shielding region 76 and a plurality of projecting portions 77 .
  • the light-transmitting region 78 is provided so as to overlap each of the plurality of photodiodes 30 .
  • the light-transmitting region 78 is formed of, for example, a light-transmitting resin material, and has a columnar shape continuous from the upper surface to the lower surface of the light filter layer 75 . More specifically, the light-transmitting region 78 has a circular columnar shape in a plan view.
  • the light-shielding region 76 is provided between adjacent light-transmitting regions 78 and overlaps the region between the photodiodes 30 .
  • the light shielding region 76 is made of, for example, a resin material colored black.
  • the protrusion 77 is provided so as to protrude from the surface of the light shielding region 76 facing the first substrate 21 .
  • the second substrate 71 is arranged facing the first substrate 21 .
  • An optical filter layer 75 and a plurality of photodiodes 30 are provided between the first substrate 21 and the second substrate 71 in the third direction Dz. More specifically, the second substrate 71 is attached to the lower surface of the protective film 202 , that is, the surface facing the first substrate 21 via the adhesive layer 204 .
  • a resin substrate such as polyimide is used for the second substrate 71 .
  • the adhesive layer 204 is, for example, an optical adhesive film (OCA: Optical Clear Adhesive).
  • the optical filter layer 75 is provided on the surface of the second substrate 71 facing the first substrate 21 with the barrier film 74 interposed therebetween.
  • the barrier film 74 is, for example, an inorganic insulating film.
  • the detection device 1 can suppress the occurrence of so-called crosstalk between the adjacent photodiodes 30 .
  • the first substrate 21 and the second substrate 71 are made of a resin material such as polyimide, and the detection device 1 can be configured as a flexible sensor deformable along the shape of the object to be detected such as the finger Fg.
  • the first substrate 21 and the second substrate 71 may be, for example, glass substrates such as quartz and alkali-free glass.
  • the protective films 201 and 202 and the adhesive layers 203 and 204 can be omitted.
  • FIG. 7 is a plan view showing an optical filter layer.
  • FIG. 8 is an explanatory diagram for schematically explaining the positional relationship between the projecting portion of the optical filter layer, the photodiodes of the array substrate, and the sensor insulating film.
  • 9 is a cross-sectional view taken along line IX-IX' of FIG. 7.
  • FIG. 7 shows the light blocking region 76 of the optical filter layer 75 with oblique lines.
  • FIG. 8 also shows a portion (protruding portion 77) of the optical filter layer 75, and the protruding portion 77 is hatched.
  • the multiple photodiodes 30 are arranged in the first direction Dx and the second direction Dy.
  • the light-transmitting regions 78 of the optical filter layer 75 are arranged in a matrix in the first direction Dx and the second direction Dy, and are provided so as to overlap each of the plurality of photodiodes 30 .
  • the translucent area 78 has a circular shape in plan view. However, the translucent area 78 may have other shapes such as a rectangular shape and a polygonal shape.
  • the projecting portion 77 is formed in a lattice shape and provided between a plurality of adjacent photodiodes 30 .
  • the projecting portion 77 is provided in a frame shape surrounding each of the plurality of photodiodes 30 .
  • the projecting portion 77 has a plurality of first portions 77a and a plurality of second portions 77b that intersect with the plurality of first portions 77a.
  • the plurality of first portions 77a are provided between the plurality of photodiodes 30 adjacent in the second direction Dy and extend in the first direction Dx.
  • the plurality of first portions 77a are arranged side by side in the second direction Dy.
  • the plurality of second portions 77b are provided between the plurality of photodiodes 30 adjacent in the first direction Dx and extend in the second direction Dy.
  • the plurality of second portions 77b are arranged side by side in the first direction Dx.
  • the sensor insulating film 25 is provided with grooves 25a between a plurality of photodiodes 30 adjacent to each other.
  • the projecting portion 77 is provided at a position overlapping the groove portion 25a. In other words, at least part of the projecting portion 77 is arranged between the side surfaces of the groove portion 25a in the first direction Dx.
  • FIG. 9 shows a cross-sectional view along the first direction Dx, in the cross-sectional view along the second direction Dy as well, at least a part of the protruding portion 77 extends in the second direction Dy and the groove portion 25a. placed between the sides of the
  • the detection device 1 can suppress positional deviation in the plane between the optical filter layer 75 and the plurality of photodiodes 30 . That is, since the optical filter layer 75 and the array substrate 2 are precisely arranged so that the plurality of light-transmitting regions 78 overlap each of the plurality of photodiodes 30 , the detection device 1 can It is possible to suppress the occurrence of moire caused by variations in the amount of incident light and misalignment of the plurality of translucent regions 78 .
  • the protruding portion 77 protrudes from the lower surface of the light shielding region 76 toward the first substrate 21 side.
  • the ends of the protruding portions 77 are provided so as to extend to the vicinity of the bottom surface of the groove portion 25a between the adjacent photodiodes 30.
  • the protruding portion 77 is made of a colored resin material like the light shielding region 76 .
  • the projecting portion 77 can effectively block light traveling in an oblique direction through the adjacent light-transmitting regions 78 between the adjacent photodiodes 30, thereby suppressing the occurrence of so-called crosstalk. be able to.
  • the projecting portion 77 is provided in a frame shape surrounding each of the plurality of photodiodes 30, the projecting portion 77 is more effective than, for example, a case where the projecting portion 77 is formed in a pin shape. Can be shaded.
  • the adhesive layer 26 is provided between the end of the projecting portion 77 and the bottom surface of the groove portion 25a, and the end portion of the projecting portion 77 is separated from the bottom surface of the groove portion 25a.
  • the end of the projecting portion 77 may be in contact with the bottom surface or part of the side wall of the groove portion 25a.
  • the protruding portion 77 is not limited to the structure continuously formed in the first direction Dx and the second direction Dy, and may be divided into a plurality of portions provided with a slit or the like.
  • FIG. 10 is a usage example of the detection device, and is an explanatory diagram for explaining the detection device arranged facing the finger.
  • a flexible resin substrate is used for each of the first substrate 21 of the array substrate 2 and the second substrate 71 of the optical filter 7, and the detection device 1 is deformable (bendable). Configured as a flexible sensor.
  • the optical filter 7 (optical filter layer 75) is arranged to face the surface of the finger Fg, and curves concavely along the shape of the surface of the finger Fg. In this case, compressive stress is generated in the optical filter 7 (optical filter layer 75).
  • the detection device 1 is provided with the protruding portion 77, it is possible to suppress positional deviation between the array substrate 2 and the optical filter 7 even when the detection device 1 is bent and deformed. Moreover, as the projecting portion 77 , a resin material having a lower elasticity than the translucent resin material forming the translucent region 78 can be used. As a result, damage and peeling of the optical filter layer 75 can be suppressed even when the optical filter layer 75 is bent and deformed.
  • FIG. 11 is an explanatory diagram for explaining an example of a manufacturing method of the detection device.
  • the first substrate 21 and the TFT layer 24 are formed on one surface of the support substrate 211 (step ST11).
  • the first substrate 21 is formed by applying the material of the first substrate 21 onto the support substrate 211 and curing the applied material.
  • the support substrate 211 is, for example, a glass substrate and has higher rigidity than the first substrate 21 .
  • Various transistors and various wirings constituting the TFT layer 24 are formed on the first substrate 21 .
  • a photodiode 30 is formed on the TFT layer 24 (step ST12).
  • the photodiode 30 may be formed by vapor deposition, or may be formed by coating. Although shown in a simplified manner in FIG. 11, various electrodes such as the lower conductive layer 34 and the upper conductive layer 35 connected to the photodiode 30 are also patterned.
  • a sensor insulating film 25 is formed covering the plurality of photodiodes 30 (step ST13).
  • a groove portion 25a is formed between adjacent photodiodes 30 .
  • the groove portion 25 a is formed following the step formed by the photodiode 30 and the TFT layer 24 .
  • the groove portion 25a may be formed by removing part of the surface of the sensor insulating film 25 by etching or the like.
  • the second substrate 71 and the barrier film 74 are formed on one surface of the support substrate 212 (step ST14).
  • the second substrate 71 is formed by applying the material of the second substrate 71 onto the supporting substrate 212 and curing the applied material.
  • the support substrate 212 is, for example, a glass substrate and has higher rigidity than the second substrate 71 .
  • a barrier film 74 is deposited on the second substrate 71 .
  • an optical filter layer 75 is formed on the barrier film 74 of the second substrate 71 (step ST15).
  • the optical filter layer 75 includes a plurality of light-transmitting regions 78, light-shielding regions 76 provided between the light-transmitting regions 78, and projecting portions 77 projecting above the light-shielding regions 76. include.
  • the light filter layer 75 may form the light-shielding region 76 with a colored resin material, pattern it, and then form the light-transmitting region 78 with a light-transmitting resin material.
  • the light filter layer 75 may form the light shielding area 76 by filling the colored resin material after forming the columnar light transmitting area 78 with a light transmitting resin material.
  • the area and arrangement pitch of the plurality of translucent regions 78 in plan view correspond to the area and arrangement pitch of the plurality of photodiodes 30 of the array substrate 2 . Further, the shape and height of the projecting portion 77 in plan view are formed corresponding to the groove portion 25 a of the sensor insulating film 25 .
  • the sealing portion 27 is formed on the peripheral portion of the optical filter layer 75 (step ST16).
  • the seal portion 27 is provided in an area corresponding to the peripheral area GA, and is formed in a frame shape surrounding the area corresponding to the detection area AA.
  • the surface of the optical filter layer 75 is covered with an adhesive layer 26 made of a liquid UV curable resin, and the first substrate 21 (array substrate 2) and the second substrate 71 (optical filter 7) are bonded together.
  • the first substrate 21 array substrate 2
  • the second substrate 71 optical filter 7
  • the first substrate is formed such that the projecting portion 77 is positioned between the plurality of adjacent photodiodes 30 in a plan view, more specifically, such that the projecting portion 77 faces the bottom surface of the groove portion 25a. 21 and the second substrate 71 are positioned and bonded together.
  • UV light is applied to cure the adhesive layer 26 .
  • UV light irradiation and heat curing may be used in combination.
  • the support substrate 211 is separated from the first substrate 21 and the support substrate 212 is separated from the second substrate 71 by so-called laser lift-off.
  • the protective film 201 is attached to the first substrate 21, and the protective film 202 is attached to the second substrate 71 (step ST18).
  • the detection device 1 can be manufactured through the steps described above.
  • the array substrate 2 and the optical filter 7 are formed in different processes using the first substrate 21 and the second substrate 71, which are different from each other. For this reason, compared to the process of laminating the optical filter layer 75 on the plurality of photodiodes 30 of the array substrate 2 , the heat and the like in the manufacturing process of the optical filter layer 75 can be applied to the plurality of photodiodes 30 of the array substrate 2 . It is possible to suppress the addition to the diode 30 and the like. Thereby, damage to the plurality of photodiodes 30 of the array substrate 2 can be suppressed. Alternatively, in the manufacturing process of the optical filter 7, there is no temperature restriction on the side of the array substrate 2, and the degree of freedom in materials and processes used for the optical filter layer 75 can be improved.
  • the optical filter layer 75 is provided with a plurality of protruding portions 77, it is possible to suppress misalignment in the step of bonding the first substrate 21 and the second substrate 71 together.
  • the first substrate 21 and the second substrate 71 are bonded together in a state in which the first substrate 21 and the second substrate 71 are respectively bonded to the support substrates 211 and 212 having rigidity. For this reason, even when the first substrate 21 and the second substrate 71 are formed as flexible resin substrates, the deformation of the first substrate 21 and the second substrate 71 is suppressed, and the position in the step of bonding the substrates is controlled. Displacement can be suppressed.
  • step ST ⁇ b>18 the protective film 201 may be attached to the first substrate 21 and the protective film 202 may not be provided on the second substrate 71 .
  • the detection device 1 of the present embodiment includes the first substrate 21, the plurality of photodiodes 30 provided on the first substrate 21, and the plurality of photodiodes 30 superimposed on each of the photodiodes 30.
  • An optical filter layer including a plurality of light-transmitting regions 78, a light-shielding region 76 provided between the plurality of light-transmitting regions 78, and a protruding portion 77 protruding from a surface of the light-shielding region 76 facing the first substrate 21. 75 and .
  • the method for manufacturing the detection device 1 of the present embodiment includes the step of forming the plurality of photodiodes 30 on the first substrate 21 (step ST12), the plurality of translucent regions 78 on the second substrate 71, and the plurality of a step of forming an optical filter layer 75 including light shielding regions 76 provided between light transmitting regions 78 and protruding portions 77 protruding above the light shielding regions 76 (step ST15); and a step of bonding the first substrate 21 and the second substrate 71 together so that the protruding portions 77 are positioned between the plurality of adjacent photodiodes 30 when viewed from above (step ST17).
  • FIG. 12 is a cross-sectional view schematically showing the detection device according to the second embodiment.
  • the same reference numerals are assigned to the same components as those described in the above-described embodiment, and overlapping descriptions will be omitted.
  • the optical filter layer 75 is formed with a light guide column structure in which the light transmitting regions 78 are formed in a columnar shape, but the invention is not limited to this, and other structures can be adopted.
  • the optical filter layer 75A is formed by alternately laminating a plurality of light shielding layers 72 and a plurality of translucent resin layers 73. Configured.
  • Openings OP are formed in regions of the plurality of light shielding layers 72 overlapping the photodiodes 30 .
  • the light shielding region 76A has no opening OP, and at least one light shielding layer 72 is provided between one surface and the other surface of the optical filter layer 75A in the third direction Dz. area.
  • the light-transmitting region 78A is a region in which the opening OP is formed, and the light-transmitting resin layer 73 is continuously formed from one surface to the other surface of the optical filter layer 75A in the third direction Dz. area.
  • the projecting portion 77 is provided in a light shielding region 76A of the light shielding layer 72 in the lowermost layer (on the side of the first substrate 21).
  • the diameters of the openings OP provided in the plurality of light shielding layers 72 are formed to have the same size along the third direction Dz. However, it is not limited to this, and the diameter of the opening OP may be different along the third direction Dz. For example, the diameter of the opening OP may be provided so as to increase from the second substrate 71 toward the first substrate 21 . Also, the plurality of light shielding layers 72 may be stacked in six layers or more, or may be four layers or less.
  • FIG. 13 is a cross-sectional view schematically showing the detection device according to the third embodiment.
  • the optical filter layer 75B has a low refractive index layer 79A and a plurality of lenses 79B.
  • the low refractive index layer 79A and the plurality of lenses 79B are provided on the second substrate 71 side of the optical filter layer 75B. placed in The multiple lenses 79B are provided at positions overlapping the multiple translucent regions 78A and the multiple photodiodes 30 .
  • the low refractive index layer 79A is provided between a plurality of adjacent lenses 79B and provided to cover the plurality of lenses 79B and the light blocking layer 72 (translucent region 78A).
  • the low refractive index layer 79A is made of a material having a smaller refractive index than the lenses 79B.
  • the light L2 from the object to be detected such as the finger Fg is condensed by each of the plurality of lenses 79B, passes through the plurality of translucent regions 78A, and enters the plurality of photodiodes 30.
  • the paths of light traveling through the optical filter layer 75B can be appropriately controlled by the plurality of lenses 79B, so the detection device 1B can suppress the occurrence of crosstalk.
  • FIG. 14 is an explanatory diagram for schematically explaining the positional relationship between the projecting portion of the optical filter layer, the photodiodes of the array substrate, and the sensor insulating film of the detection device according to the fourth embodiment.
  • FIG. 15 is a cross-sectional view schematically showing the detection device according to the fourth embodiment.
  • the array substrate 2A has at least one pair of sensors provided on the sensor insulating film 25 between a plurality of adjacent photodiodes 30. It has side protrusions 29 .
  • the sensor-side protruding portion 29 protrudes from the bottom surface of the groove portion 25a of the sensor insulating film 25 toward the second substrate 71 side.
  • each sensor-side protrusion 29 is provided for one photodiode 30 .
  • the sensor-side protrusions 29 are provided at four corners of the protrusion 77 surrounding one photodiode 30 .
  • four sensor-side projecting portions 29 are provided at the intersections of the first portion 77a and the second portion 77b of the projecting portion 77, respectively.
  • the projecting portion 77 (first portion 77a) is arranged between a pair of sensor-side projecting portions 29 adjacent to each other in the second direction Dy. Further, as shown in FIGS. 14 and 15, the projecting portion 77 (second portion 77b) is arranged between a pair of sensor-side projecting portions 29 adjacent to each other in the first direction Dx.
  • the fourth embodiment since a plurality of sensor-side protrusions 29 corresponding to the protrusions 77 are provided, the first substrate 21 (array substrate 2A) and the second substrate 71 (optical filter 7) and position accuracy can be improved.
  • FIG. 15 shows the light guide column type optical filter layer 75, it is not limited to this, and the configuration of the fourth embodiment can be combined with the configurations of the above-described second and third embodiments. .

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