WO2022156634A1 - 一种覆铜板的氮化硅陶瓷基片的制备方法 - Google Patents

一种覆铜板的氮化硅陶瓷基片的制备方法 Download PDF

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Publication number
WO2022156634A1
WO2022156634A1 PCT/CN2022/072347 CN2022072347W WO2022156634A1 WO 2022156634 A1 WO2022156634 A1 WO 2022156634A1 CN 2022072347 W CN2022072347 W CN 2022072347W WO 2022156634 A1 WO2022156634 A1 WO 2022156634A1
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Prior art keywords
silicon nitride
ceramic substrate
nitride ceramic
atmosphere
powder
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PCT/CN2022/072347
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English (en)
French (fr)
Chinese (zh)
Inventor
刘学建
张辉
姚秀敏
刘岩
蒋金弟
黄政仁
陈忠明
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Shanghai Institute of Ceramics of CAS
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Shanghai Institute of Ceramics of CAS
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Priority to US18/261,078 priority Critical patent/US12351524B2/en
Priority to EP22742113.8A priority patent/EP4282848A4/en
Priority to JP2023543222A priority patent/JP7617290B2/ja
Publication of WO2022156634A1 publication Critical patent/WO2022156634A1/zh
Anticipated expiration legal-status Critical
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate

Definitions

  • the invention relates to a preparation method of a silicon nitride ceramic substrate of a copper clad plate, belonging to the field of semiconductor materials and devices.
  • semiconductor devices have developed rapidly along the direction of high power, high frequency and integration.
  • the heat generated by the operation of the semiconductor device is a key factor that causes the failure of the semiconductor device, and the thermal conductivity of the insulating substrate is the key to affecting the heat dissipation of the overall semiconductor device.
  • semiconductor devices are often faced with complex mechanical environments such as bumps and vibrations during use, which imposes strict requirements on the reliability of the materials used.
  • High thermal conductivity silicon nitride (Si 3 N 4 ) ceramics is considered to be the best semiconductor insulating substrate material with both high strength and high thermal conductivity due to its excellent mechanical and thermal properties. ) has great potential in cooling applications.
  • the theoretical thermal conductivity of silicon nitride crystals can reach more than 400W ⁇ m -1 ⁇ K -1 , which has the potential to become a high thermal conductivity substrate.
  • Excellent mechanical properties and good high thermal conductivity make silicon nitride ceramics expected to make up for the deficiencies of existing ceramic substrate materials such as alumina and aluminum nitride, and have great potential in the application of high-end semiconductor devices, especially high-power IGBT heat dissipation substrates.
  • the thermal conductivity of traditional silicon nitride ceramic materials is only 20-30W ⁇ m -1 ⁇ K -1 , which cannot meet the application requirements for heat dissipation of high-power semiconductor device substrates.
  • silicon nitride is a strong covalent bond compound, and it is difficult to sinter densely by means of solid-phase diffusion. It is necessary to add an appropriate amount (usually greater than 5wt%) of rare earth oxides and/or metal oxides as sintering aids (such as Y 2 O 3 , La 2 O 3 , MgO, Al 2 O 3 , CaO, etc.), but the addition of sintering aids will significantly reduce the thermal conductivity of silicon nitride ceramics, and a low content of sintering aids helps to obtain High thermal conductivity, but low content of sintering aids brings the problem of sintering and densification of silicon nitride ceramics.
  • sintering aids such as Y 2 O 3 , La 2 O 3 , MgO, Al 2 O 3 , CaO, etc.
  • Ceramic substrate also known as ceramic circuit board, includes a ceramic substrate and a metal circuit layer.
  • the packaging substrate plays a key role in connecting the top and bottom, connecting the internal and external heat dissipation channels, and also has functions such as electrical interconnection and mechanical support.
  • Silicon nitride ceramics have the advantages of high thermal conductivity, good heat resistance, high mechanical strength, and low thermal expansion coefficient, and are the preferred substrate materials for power semiconductor device packaging.
  • the ceramic copper clad laminate is an important component of high-power devices. It has the characteristics of high thermal conductivity, high electrical insulation, high mechanical strength, and low expansion of ceramics, as well as high electrical conductivity and excellent welding performance of oxygen-free copper.
  • Various patterns are etched like the polymer substrate PCB circuit board.
  • ceramic substrates can be divided into two categories: planar ceramic substrates and three-dimensional ceramic substrates.
  • planar ceramic substrates can be divided into thin-film ceramic substrates, thick-film printed ceramic substrates, directly bonded copper ceramic substrates, active metal brazed ceramic substrates, direct electroplated copper ceramic substrates, and laser-activated metal ceramic substrates.
  • active metal brazing ceramic substrate AMB ceramic substrate uses solder containing a small amount of active metal elements to realize the welding between copper foil and ceramic substrate, and AMB substrate relies on the chemical reaction between the active solder and ceramic interface to realize the bond Therefore, it has the unique advantages of high bonding strength, strong resistance to high and low temperature shock failure, and high reliability. It has become the preferred packaging material for new-generation semiconductors and new high-power power electronic devices.
  • the AMB welding process of the ceramic substrate and the copper foil is to first coat a layer of active metal solder on the surface of the ceramic substrate, and then heat it under vacuum conditions to chemically bond the active metal elements and the surface elements of the ceramic substrate, so as to achieve High-strength connection between the two.
  • the methods of coating the surface of the substrate with a solder layer mainly include screen printing, plating, sputtering, spray plating, etc. Different process methods have their own characteristics.
  • the purpose of the present invention is to provide a silicon nitride ceramic substrate of a copper clad laminate and a preparation method thereof.
  • the present invention provides a method for preparing a silicon nitride ceramic substrate of a copper clad laminate.
  • the total amount of impurities in the silicon nitride ceramic material is ⁇ 1.0 wt%; the impurities include at least one of lattice oxygen, metal impurity ions, and impurity carbon.
  • the thickness of the copper plate is 0.2mm ⁇ 1.0mm.
  • the average particle size of the silver powder is 5-20 ⁇ m, and the oxygen content is not more than 0.05%; the average particle size of the copper powder is 5-20 ⁇ m, and the oxygen content is not more than 0.05%; The average particle size is 1-5 ⁇ m, and the oxygen content is not more than 0.2%; the protective atmosphere is a nitrogen atmosphere.
  • the casting film green body is dried by a flowing heat N2 atmosphere with increasing temperature, the temperature range of the N2 atmosphere is 40-85°C, and the atmosphere pressure is 0.1-0.2MPa; preferably, the temperature of the nitrogen atmosphere is The stage is 2 stages, the atmospheric temperature range of the front stage is 40-65°C, the atmospheric temperature range of the back-stage is 60-85°C, and the atmospheric temperature of the front-stage is less than the atmospheric temperature of the back-stage.
  • the parameters of the debonding include: the pressure of the N 2 atmosphere is 0.1-0.2 MPa; the treatment temperature is 500-800° C.; and the treatment time is 1-3 hours.
  • the preparation method of the silicon nitride ceramic substrate includes: (1) using at least one of silicon powder and silicon nitride powder as the original powder, and using Y 2 O 3 powder and MgO powder as the original powder; As a sintering aid, an organic solvent and a binder are added, and mixed in a protective atmosphere to obtain a mixed slurry; (2) the obtained mixed slurry is cast-molded in a protective atmosphere to obtain a china; (3) the obtained The green body is placed in a reducing atmosphere and pretreated at 500-800 °C to obtain a green body; (4) the obtained green body is placed in a nitrogen atmosphere, firstly heat-treated at a low temperature of 1600-1800 °C, and then heated at 1800 °C.
  • the protective atmosphere is an inert atmosphere or a nitrogen atmosphere, preferably a nitrogen atmosphere; the reducing atmosphere is a hydrogen content not higher than 5vol% hydrogen/nitrogen atmosphere.
  • the preparation method of the nitrided ceramic silicon substrate includes: (1) using at least one of silicon powder and silicon nitride powder as the original powder, and using Y 2 O 3 powder and MgO powder as the original powder;
  • the green body is used as a sintering aid, and is mixed and formed in a protective atmosphere to obtain a green body;
  • the obtained green body is placed in a reducing atmosphere and pretreated at 500-800 ° C to obtain a green body; (3) ) placing the obtained green body in a nitrogen atmosphere, first performing a low-temperature heat treatment at 1600-1800°C, and then performing a high-temperature heat treatment at 1800-2000°C to obtain the silicon nitride ceramic substrate;
  • the protective atmosphere It is an inert atmosphere or a nitrogen atmosphere, preferably a nitrogen atmosphere;
  • the reducing atmosphere is a hydrogen/nitrogen mixed atmosphere with a hydrogen content not higher than 5 vol%.
  • the present invention reduces lattice vacancies and dislocations through the control of oxygen content in the preparation process (including the avoidance of raw material oxidation and reducing atmosphere pretreatment in the process of mixing and green body forming), the control of metal impurity ion content, and the control of carbon content.
  • the amount of structural defects is equal to achieve the purpose of improving the thermal conductivity and breakdown field strength of the silicon nitride ceramic material.
  • the composition and content of the grain boundary phase are controlled by a two-step sintering process.
  • the low-temperature sintering stage promotes the formation of a liquid phase of the sintering aid and promotes densification; the high-temperature stage makes the residual MgO sintering aid volatilize and further reduces the grain boundary phase.
  • the high breakdown field strength of the material is conducive to the application of high-power devices, and is conducive to reducing the thickness of the substrate material and reducing the thermal resistance, so that the copper clad laminate made of this material exhibits thermal shock resistance, high reliability, and use.
  • the present invention first adopts the tape casting method to realize the forming of the solder foil blanks, so as to ensure the uniform distribution and uniform thickness of each component in the solder;
  • the inert atmosphere is used to protect the metal powder to avoid oxidation of the metal powder, thereby ensuring the high-strength welding of the silicon nitride ceramic copper clad laminate.
  • the ceramic copper clad laminate based on the traditional aluminum nitride, aluminum oxide, zirconia toughened aluminum oxide (ZTA) ceramic substrate can only weld copper foil with a thin thickness (generally not more than 0.8mm) ), if the thickness of the copper foil is too large, the reliability will decrease sharply; and the method of the present invention is suitable for the welding of the high thermal conductivity ceramic substrate and the large thickness copper foil (0.1-1.5mm), even for the copper foil with a thickness of more than 1mm, High-strength, low-stress, and high-reliability silicon nitride ceramic copper clad laminates can still be prepared; while copper foils with larger thicknesses can withstand higher current density and are suitable for higher-power
  • FIG. 1 is the XRD pattern of the silicon nitride ceramic material prepared in Example 1.
  • FIG. 1 is the XRD pattern of the silicon nitride ceramic material prepared in Example 1.
  • FIG. 2 is a typical SEM microstructure of the silicon nitride ceramic material prepared in Example 1.
  • FIG. 2 is a typical SEM microstructure of the silicon nitride ceramic material prepared in Example 1.
  • FIG. 3 is a typical TEM microstructure of the silicon nitride ceramic material prepared in Example 1.
  • FIG. 4 is the XRD pattern of the material prepared after the nitridation treatment in Example 6.
  • FIG. 4 is the XRD pattern of the material prepared after the nitridation treatment in Example 6.
  • FIG. 5 is the XRD pattern of the material prepared after high temperature sintering in Example 6.
  • FIG. 6 is a typical SEM microstructure of the silicon nitride ceramic material prepared in Example 6.
  • Fig. 7 is the green body of the active metal solder foil prepared by the present invention.
  • FIG. 8 is a schematic structural diagram of a silicon nitride ceramic substrate of a copper clad laminate.
  • Example 9 is the silicon nitride ceramic substrate of the copper clad laminate prepared in Example 12.
  • Figure 10 shows the microstructure of the bonding area of the silicon nitride ceramic substrate of the copper clad laminate.
  • Fig. 11 shows the microstructure (a) of the welding zone of the silicon nitride ceramic substrate of the copper clad laminate and its composition analysis (b).
  • FIG. 12 is an ultrasonic scanning diagram of the silicon nitride ceramic substrate of the copper clad laminate after being thermally impacted by high and low temperature cycles.
  • Table 1 in FIG. 13 shows the composition of the silicon nitride ceramic material and its preparation process.
  • Table 2 in Figure 14 shows the phase composition and performance parameters of the silicon nitride ceramic material.
  • Table 3 in FIG. 15 shows the composition of the solder foils prepared according to the present invention.
  • Table 4 in FIG. 16 shows the preparation parameters and performance parameters of the silicon nitride ceramic substrate of the copper clad laminate in the present invention.
  • the silicon nitride ceramic material contains a silicon nitride phase of not less than 95%, and a grain boundary phase of a crystalline phase content of not less than 40%. Moreover, the content of lattice oxygen, metal impurity ions, carbon impurities, etc. in the obtained silicon nitride ceramic material is low, and the total amount is less than 1.0 wt %. Therefore, the silicon nitride ceramic material in the present invention has high thermal conductivity and breakdown field strength.
  • the preparation process under a clean and protective atmosphere, air or hot air is prevented from contacting the material, and the impurity content and oxygen content in the prepared ceramic are controlled, so that under the premise of not reducing the bending strength of the material, To achieve the purpose of improving the thermal conductivity of the material and the breakdown field strength.
  • the following exemplarily illustrates the preparation method of the silicon nitride ceramic material provided by the present invention.
  • the preparation method of the silicon nitride ceramic material specifically includes the following steps: mixing under protective atmosphere and forming green body, pretreatment under reducing atmosphere, sintering under nitrogen atmosphere and controlling the sintering system.
  • the original powder, sintering aid Y 2 O 3 powder and MgO powder are added in an airtight container into anhydrous ethanol as a solvent, mixed uniformly under the protection of a protective atmosphere, and then dried to obtain a mixed powder.
  • the binder may be 5-9 wt % of the total mass of the original powder + sintering aid.
  • the solid content of the obtained mixed slurry is 50-70 wt %.
  • the protective atmosphere used for the mixture is an inert atmosphere or a nitrogen atmosphere, preferably a nitrogen atmosphere.
  • the mixing is carried out in a closed container with a polyurethane or nylon lining, and nitrogen gas is introduced into the container to avoid the entry of air.
  • the original powder is silicon nitride powder, silicon powder, or a mixed powder of silicon nitride powder and silicon powder.
  • the mass percentage of silicon powder in the silicon nitride and silicon mixed powder is not less than 75%, that is, the silicon nitride formed by nitriding the Si powder accounts for more than 80% by mass of the total silicon nitride phase.
  • the total mass of the sintering aid does not exceed 5 wt % of the total mass of the original powder + the sintering aid. If the sintering aid is too much, the thermal conductivity and breakdown field strength of the material will be reduced due to the increase in the content of the grain boundary phase in the prepared silicon nitride ceramic material. If the sintering aid is too small, the densification cannot be fully promoted, resulting in low density and increased pores of the prepared silicon nitride ceramic material, thereby reducing the thermal conductivity and breakdown field strength of the material.
  • the molar ratio of Y 2 O 3 to MgO in the sintering aid may be 1.0-1.4:2.5-2.9. If MgO is excessive, the liquid eutectic temperature formed by the sintering aid is relatively low, and MgO volatilizes more seriously at high temperature, resulting in low thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material. If there is a small amount of MgO, due to the low proportion of MgO in the sintering aid, the liquid phase eutectic temperature formed by the sintering aid is relatively high, and the densification effect of the material is relatively poor, resulting in the thermal conductivity and thermal conductivity of the prepared silicon nitride ceramic material. The breakdown field strength was significantly reduced.
  • the mixed powder is directly pressed into shape to obtain a green body.
  • the press forming method includes but is not limited to dry pressing, isostatic pressing, and the like.
  • the mixed slurry is directly cast-molded to obtain a green body (sheet-like green body).
  • the mixed slurry is subjected to vacuum degassing treatment (the degree of vacuum is generally -0.1 to -10 kPa, and the time is 4 to 24 hours). More preferably, the thickness of the sheet-like china is adjusted by controlling the height of the blade of the tape casting.
  • the protective atmosphere used for china forming can be an inert atmosphere or a nitrogen atmosphere, preferably a nitrogen atmosphere. Generally, nitrogen protection is directly introduced into the molding process.
  • Pretreatment of shaped green bodies in a reducing atmosphere is carried out in a reducing atmosphere and a certain temperature, to remove the oxygen in the original powder and to remove the organic matter in the formed green body.
  • the original powder is silicon powder, or a mixed powder of silicon nitride and silicon
  • the shaped green body is first pretreated in a reducing atmosphere at a certain temperature, and then placed in a reducing atmosphere. further nitriding treatment.
  • the pretreatment can be performed in a reducing nitrogen atmosphere with a hydrogen content not higher than 5%, and the gas pressure of the reducing atmosphere is 0.1-0.2 MPa.
  • the pretreatment temperature can be 500-800°C, and the holding time can be 1-3 hours.
  • the nitriding treatment can be performed in a nitrogen atmosphere with a hydrogen content of not more than 5%, and the atmosphere pressure is 0.1-0.2 MPa.
  • the nitriding temperature is 1350-1450°C, and the holding time is 3-6 hours.
  • the sintering treatment of the green body includes low temperature heat treatment and high temperature heat treatment. Specifically, sintering and densification is carried out under high nitrogen pressure using a step-by-step sintering process, the step-by-step sintering process includes a low-temperature heat treatment for inhibiting the volatilization of low-melting substances in the sintering aid, and further high-temperature sintering for densification.
  • the sintering treatment should adopt air pressure sintering under the condition of high nitrogen pressure, and the atmospheric pressure may be 0.5-10 MPa.
  • the green body can be placed in a BN crucible for sintering.
  • the temperature of the low-temperature heat treatment may be 1600-1800° C., and the holding time may be 1.5-2.5 hours.
  • the temperature of the high-temperature heat treatment may be 1800-2000° C., and the holding time may be 4-12 hours.
  • the content of lattice oxygen, metal impurity ions, impurity carbon, etc. in the prepared silicon nitride ceramic is low, and has the characteristics of high thermal conductivity and high breakdown field strength, and its thermal conductivity is 90W ⁇ m -1 ⁇ K -1 or above, and the breakdown field strength is above 30KV/mm.
  • an active metal brazing process is used to prepare a silicon nitride ceramic copper clad laminate, which includes the following steps: mixing of solder, forming of solder foil blanks, cutting and lamination of solder foil blanks, lamination of laminates Debonding and vacuum soldering of silicon nitride copper clad laminates.
  • the following exemplarily illustrates the preparation method of the silicon nitride ceramic substrate of the copper clad laminate provided by the present invention.
  • Solder mix Under the protection of an airtight container and N2 atmosphere, uniformly mix silver powder, copper powder, titanium powder, organic solvent and binder to obtain a mixed slurry. Specifically, the materials were mixed by wet ball milling in an airtight container, and a 0.1 MPa N 2 atmosphere was poured into the container to avoid the entry of air.
  • the mass percentage of silver powder can be 60-65%, the average particle size can be 5-20 ⁇ m, and the oxygen content is not more than 0.05%; the mass percentage of copper powder can be 33-37%, and the average particle size can be 5-20 ⁇ m , the oxygen content is not more than 0.05%; the mass percentage of the titanium powder can be 1-4%, the average particle size can be 1-5 ⁇ m, and the oxygen content is not more than 0.2%.
  • the binder may be polyvinyl butyral (PVB), and the addition amount of the binder may be 5-15 wt % of the total mass of silver powder, copper powder and titanium powder.
  • the slurry also includes other auxiliary agents, such as at least one of a defoaming agent, a dispersing agent, and a plasticizer.
  • a defoaming agent can be oleic acid, and the added amount can be 0.2-1.0 wt % of the total mass of silver powder, copper powder and titanium powder.
  • the dispersing agent can be at least one of polyethylene glycol (PEG) and triethyl phosphate (TEP), and the added amount can be 0.2-1.0 wt % of the total mass of silver powder, copper powder and titanium powder.
  • the plasticizer can be at least one of diethyl phthalate (DEP), dibutyl phthalate (DBP), polyethylene glycol (PEG), and the amount added can be silver powder, copper powder and titanium 2-6wt% of the total mass of the powder.
  • the solid content of the mixed paste of the solder is 55 to 75 wt %.
  • solder foil blanks Forming of solder foil blanks.
  • the mixed slurry was tape-molded under N2 atmosphere and dried under hot N2 atmosphere to realize the preparation of solder foil green body with uniform thickness.
  • the thickness of the formed solder foil blank is 20-60 ⁇ m, and the thickness deviation is not more than ⁇ 10 ⁇ m.
  • the casting film green body is dried by a flowing hot N 2 atmosphere with increasing temperature, the temperature of the hot N 2 atmosphere is 40-85° C., and the atmosphere pressure is 0.1-0.2 MPa.
  • the temperature range of the atmosphere in the first stage is 40-65°C, and the temperature range of the atmosphere in the latter stage is 60-85°C.
  • solder foil blanks The dried solder foil blank is cut into a foil that matches the size of the silicon nitride ceramic substrate, and the silicon nitride ceramic substrate, the solder blank foil and the copper foil are laminated.
  • the lamination of the solder blank is to place a piece of solder foil blank on the upper and lower sides of the silicon nitride substrate, and then place a layer of copper foil with a matching size on the outer side of the solder foil blank.
  • the laminated sheet is heat-treated under slightly positive pressure and a certain temperature.
  • a slight positive pressure is generated by passing in an N 2 atmosphere, the atmosphere pressure is 0.1-0.2 MPa, the processing temperature is 500-800° C., and the processing time is 1-3 h.
  • Vacuum welding of silicon nitride copper clad laminates The laminates are vacuum welded under vacuum and certain temperature conditions.
  • the parameters of vacuum welding include: the degree of vacuum is 10 -2 to 10 -4 Pa; the welding temperature is 860 to 920° C., and the holding time is 5 to 20 minutes.
  • the silicon nitride ceramic material can also be made into a copper clad laminate, which can be used as a heat dissipation substrate for a high-power insulated gate bipolar transistor (IGBT) module.
  • the copper clad laminate made of the obtained silicon nitride ceramic has the characteristics of thermal shock resistance, high reliability and long service life.
  • the bending strength of the silicon nitride ceramic substrate material prepared in Example 1 is 810 MPa, the thermal conductivity is 106 W ⁇ m - 1 ⁇ K -1 , and the breakdown field strength is 45 KV/mm.
  • the XRD pattern of the material is shown in Figure 1, there are only high-intensity ⁇ -Si 3 N 4 diffraction peaks, and no obvious steamed bread peak, which indicates that the content of ⁇ -Si 3 N 4 phase in the prepared material is greater than 95wt %, the content of grain boundary phase is less than 5%.
  • the typical SEM microstructure of the material is shown in Figure 2.
  • the material has high density and uniform microstructure, and the Si3N4 grains (grey - black area) exhibit a typical bimodal distribution, consisting of fine equiaxed Si3N4
  • the grains and the large long columnar Si 3 N 4 grains are inlaid with each other; the grain boundary phase (grey area) is low in content and uniformly dispersed in the Si 3 N 4 matrix; further statistical analysis through at least 10 SEM images, combined with The total introduced amount of sintering aids in the raw material is less than or equal to 5% by weight, and it can be concluded that the content of the grain boundary phase in the silicon nitride ceramic material prepared in this example is less than 5%.
  • the typical TEM microstructure of the material is shown in Figure 3 (B in Figure 3 is a partial enlarged view of the dotted box area in Figure 3 A), and grain boundaries are dispersed among the Si 3 N 4 grains (gray-black area). phase (grey-white area), while the grain boundary phase consists of glass phase (light-colored area) and crystalline phase (dark-colored area); through statistical analysis of at least 10 TEM images, it can be concluded that the silicon nitride ceramic material prepared in this example The content of the crystalline phase in the grain boundary phase is about 54 vol%.
  • the forming substrate blank is cut into a desired shape and placed in a BN crucible, and it is loaded into a carbon tube furnace; then, heat treatment is performed according to the following process sequence: (1) at 0.2MPa N 2 ( ( 2 ) Under the protection of 0.2MPa N 2 (containing 5% H 2 ) atmosphere, the temperature was raised to 600°C at a rate of 4°C/min for 3 h; The rate of heating to 1450 °C per minute was followed by nitriding treatment for 6 h; (3) under the protection of 3MPa N2 atmosphere, the temperature was raised to 1700 °C at the rate of 6 °C/min and then low temperature heat treatment for 2h; (4) under the protection of 8MPa N2 atmosphere The temperature was increased to 1950°C at a rate of 5°C/min and then sintered at high temperature for 10h; (5) cooled to room temperature with the furnace.
  • the bending strength of the silicon nitride ceramic substrate material prepared in Example 6 is 710MPa, the thermal conductivity is 110W ⁇ m ⁇ 1 ⁇ K ⁇ 1 , and the breakdown field strength is 48KV/mm.
  • the XRD pattern of the material after the nitriding process (the above-mentioned process (2)) is shown in Figure 4, the main crystal phase is ⁇ -Si 3 N 4 , and contains a small amount of ⁇ -Si 3 N 4 phase ( 5 to 10%).
  • the XRD pattern of the material after the high temperature sintering process (the above process (4)) is shown in Figure 5, there is only ⁇ -Si 3 N 4 diffraction peak, and no obvious steamed bread peak, which indicates that the ⁇ -Si 3 N 4 peak in the prepared material is
  • the content of Si 3 N 4 phase is greater than 95wt%, and the content of grain boundary phase is less than 5wt%; further using the same method as in Example 1 above, the content of crystal phase in the grain boundary phase of the prepared material is measured to be about 60vol%.
  • the typical SEM microstructure of the material fracture is shown in Figure 6.
  • the material has high density and uniform microstructure, which is composed of fine equiaxed Si 3 N 4 grains and large long columnar Si 3 N 4 grains inlaid with each other.
  • 1g castor oil 1g PEG, 70g dehydrated alcohol
  • 200g silicon nitride grinding balls are put into the lined polyurethane ball mill jar with atmosphere protection
  • the specific parameters such as the ratio of raw materials, the composition of sintering aids, the pretreatment process, and the sintering process are the same as those in Example 1 (see Table 1).
  • the composition and properties of the prepared materials are shown in Table 1. Because the nitrogen atmosphere protection measures of the present invention are not adopted in the material preparation process, the silicon nitride powder in the raw material is oxidized to different degrees, resulting in the thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material. were significantly reduced, but the flexural strength remained basically unchanged.
  • composition ratio of the sintering aid, the pretreatment process, and the sintering process are the same as those in Example 1 (see Table 1), except that the total amount of the sintering aid is increased.
  • the composition and properties of the prepared materials are shown in Table 2. Due to the high content of sintering aids, the grain boundary phase with lower thermal conductivity formed by the sintering aids has a higher content, resulting in a significant decrease in the thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic materials. But the flexural strength remains basically the same.
  • the composition and properties of the prepared materials are shown in Table 2. Due to the high proportion of MgO in the sintering aid, the liquid eutectic temperature formed by the sintering aid is relatively low, and the high temperature volatilization is serious, resulting in a significant decrease in the thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material. .
  • the composition and properties of the prepared materials are shown in Table 2. Due to the low proportion of MgO in the sintering aid, the liquid eutectic temperature formed by the sintering aid is relatively high, and the densification effect of the material is relatively poor, resulting in the thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material. were significantly reduced.
  • Example 2 The specific parameters such as the ratio of raw materials, the composition of sintering aids, and the pretreatment process are the same as those in Example 1 (see Table 1), and the process is similar to that in Example 1, except that the sintering process is one-step sintering.
  • the composition and properties of the prepared materials are shown in Table 2. Because the low-temperature heat treatment process is not included, serious volatilization of MgO begins to occur without sufficient densification, and the densification effect of the material is relatively poor, resulting in obvious thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material. reduce.
  • Example 1 The specific parameters such as raw material ratio, sintering aid composition, pretreatment process and sintering process are the same as in Example 1 (see Table 1), and the process is the same as in Example 1, except that the low temperature heat treatment temperature is on the lower side.
  • the composition and properties of the prepared materials are shown in Table 2. Because the low temperature heat treatment temperature is relatively low, the densification effect of the material is relatively poor, resulting in a significant decrease in the thermal conductivity and breakdown field strength of the prepared silicon nitride ceramic material.
  • Example 8 The specific parameters such as the ratio of raw materials, the composition of sintering aids, the pretreatment process, and the sintering process are the same as those in Example 8 (see Table 1). or high (Comparative Example 8).
  • the composition and properties of the prepared materials are shown in Table 2. Due to the low (comparative example 7) or high (comparative example 8) nitriding temperature, the Si powder in the material was not sufficiently nitrided (comparative example 7) or partially silicided (comparative example 8), resulting in the prepared nitrogen The mechanical, thermal and electrical properties of silicon carbide ceramic materials are significantly reduced.
  • solder foil blank (1) Ag powder (average particle size 8 ⁇ m, oxygen content 0.01%), Cu powder (average particle size 6 ⁇ m, oxygen content 0.01%) and Ti powder (average particle size 2 ⁇ m, Oxygen content 0.1%) was weighed according to the mass ratio of 63:35:2 and placed in a ball mill lined with polyurethane, while adding 0.2% oleic acid, 0.5% PEG, 2% PVA, 1% DEP, 200% nitrogen Silicon grinding balls and 110% anhydrous ethanol were evacuated and passed into a 1 atm N2 atmosphere for protection, and the mixture was ball-milled at 100 rpm for 8 h to obtain a slurry with uniform dispersion and no agglomeration; (2) Vacuum the prepared slurry The bubble removal treatment was performed for 8 hours, and the vacuum degree was -0.5kPa; (3) the above-mentioned slurry after bubble removal was tape-casted under a N2 protective atmosphere, and the thickness of the cast film blank was controlled at
  • AMB vacuum brazing (1) Assemble the prepared silicon nitride ceramic substrate, solder foil blank and oxygen-free copper foil with a thickness of 0.3 mm to form the laminate assembly shown in Figure 8; (2) Debonding the laminated sheet assembly under 0.15MPa N 2 atmosphere at 650°C for 2 hours; (3) Put the debonded laminated sheet assembly into a vacuum brazing furnace, under 10 -3 Pa vacuum, 900 °C, heat preservation for 10min for welding; (4) Cool down to room temperature with the furnace.
  • Figure 9 shows the prepared high-strength, low-stress, high-reliability silicon nitride ceramic copper clad laminate, in which the bonding strength (copper foil peeling strength) is 15N/mm (refer to GB/T4722-2017 "Rigid cladding for printed circuits").
  • the flatness of the copper clad laminate is 0.2mm;
  • Figure 10 and Figure 11 show the microstructure and composition analysis of the silicon nitride copper clad laminate welding area.
  • the welding area with a width of about 50 ⁇ m between the silicon ceramic substrate and the copper foil layer (the width is consistent with the width of the solder foil), and the welding area is mainly composed of Cu (light gray area) and Ag (grey area), in which Cu forms Basically continuous phase, Ag forms dispersed Ag particles (grey-white small particles) and part-area Ag continuous phase (grey-white network structure); there is an element diffusion reaction transition zone with a width of about 100nm between the silicon nitride ceramic and the welding zone , a new phase (such as Ti 5 Si 3 ) formed by the reaction of Ti and Si elements is formed, thereby ensuring the welding strength; Intermediate cooling and quenching for 10 minutes is a thermal shock), the prepared silicon nitride copper clad laminate is intact (the high and low temperature cycle thermal shock limit test is not carried out), and there are no visible defects such as microcracks, warpage, and cracking ( Figure 12).
  • Example 12 The specific parameters such as material composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3, and the process process refers to Example 12, the difference is: the silicon nitride ceramic material prepared in Example 8 is selected as silicon nitride Ceramic substrate, its thickness is 0.5mm. The characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4.
  • solder composition The specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Because the active metal Ti content in the solder composition is too low (comparative example 9) or too high (comparative example 10), the copper layer peel strength and thermal shock cycle life of the prepared ceramic copper clad laminates are significantly reduced (after 120 and 150 cycles, respectively). After thermal shock cycles, cracking defects occurred in the ceramic substrate and part of the soldered area of the soldered copper foil).
  • solder composition The specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Because the thickness of the solder foil is too small (Comparative Example 11) or too large (Comparative Example 12), the peel strength of the copper layer of the prepared ceramic copper clad laminate is partially reduced (Comparative Example 11) or significantly reduced (Comparative Example 12), thermal shock The cycle life was significantly reduced (the ceramic substrate and part of the soldered copper foil had cracking defects after 120 and 100 thermal shock cycles, respectively).
  • the specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Because the thickness of the welded copper foil is too large (2mm), although the peeling strength of the copper layer of the prepared ceramic copper clad laminate is high, the thermal stress generated during the thermal shock cycle is large, and the thermal shock life is significantly reduced (after 80 shocks). After cycling, a cracking defect developed between the ceramic substrate and the copper foil).
  • solder composition solder composition
  • tape casting copper foil thickness
  • debonding and vacuum welding process The specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Due to the low degree of vacuum in the vacuum welding process, the bonding force between the two is low, and the copper layer peel strength and thermal shock cycle life of the prepared ceramic copper clad laminate are significantly reduced (after 130 impact cycles, the ceramic substrate and A cracking defect occurs between the copper foils).
  • solder composition The specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Due to the high temperature of the vacuum welding process, which obviously exceeds the eutectic temperature of the solder, the solder overflows after being melted at a high temperature, and no effective welding is formed between the ceramic substrate and the copper foil, which directly cracks.
  • solder composition The specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Because the temperature of the vacuum welding process is too low, the eutectic temperature of the solder is not fully reached, so that the active metal is not fully diffused and forms a good chemical bond, and the copper layer peel strength and thermal shock cycle life of the prepared ceramic copper clad laminate are significantly reduced.
  • the specific parameters such as solder composition, tape casting, copper foil thickness, debonding and vacuum welding process are shown in Table 3.
  • the process refers to Example 12.
  • the characteristics of the prepared silicon nitride ceramic copper clad laminate are shown in Table 4. Because the holding time at the temperature of the vacuum welding process is too long (Comparative Example 17) or too short (Comparative Example 18), the two do not reach the optimal combination state, and the copper layer peel strength and thermal shock cycle life of the prepared ceramic copper clad laminate somewhat reduced.

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  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024170536A1 (de) * 2023-02-14 2024-08-22 Rogers Germany Gmbh Verfahren zur herstellung eines metall-keramik-substrats und ein metall-keramik-substrat hergestellt mit einem solchen verfahren
WO2024170534A1 (de) * 2023-02-16 2024-08-22 Rogers Germany Gmbh Metall-keramik-substrat und verfahren zur herstellung eines metall-keramik-substrats
WO2025110091A1 (ja) * 2023-11-22 2025-05-30 日本特殊陶業株式会社 窒化ケイ素質焼結体、および窒化ケイ素質放熱基板

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112811922B (zh) * 2021-01-20 2021-11-02 中国科学院上海硅酸盐研究所 一种覆铜板的氮化硅陶瓷基片及其制备方法
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CN116275701B (zh) * 2023-03-29 2026-02-06 中国科学院上海硅酸盐研究所 一种Ti-Si共晶带状焊料及其制备方法和应用

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002293641A (ja) * 2001-03-29 2002-10-09 Hitachi Metals Ltd 窒化ケイ素質焼結体
CN1597614A (zh) * 2004-05-17 2005-03-23 清华大学 高热导率、高强度氮化硅陶瓷制造方法
CN104409425A (zh) * 2014-11-13 2015-03-11 河北中瓷电子科技有限公司 高导热氮化硅陶瓷覆铜板及其制备方法
EP3156366A1 (en) * 2014-06-16 2017-04-19 UBE Industries, Ltd. Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder
CN108383532A (zh) * 2018-05-28 2018-08-10 江苏东浦精细陶瓷科技股份有限公司 一种致密化氮化硅陶瓷材料及其制备方法
CN108585881A (zh) * 2018-06-14 2018-09-28 哈尔滨工业大学 一种高热导率氮化硅陶瓷及其制备方法
CN112811922A (zh) * 2021-01-20 2021-05-18 中国科学院上海硅酸盐研究所 一种覆铜板的氮化硅陶瓷基片及其制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166165A (ja) * 1984-02-10 1985-08-29 Toshiba Corp 窒化物系セラミックスと金属との接合方法
EP0480038B1 (en) * 1990-04-16 1997-07-09 Denki Kagaku Kogyo Kabushiki Kaisha Ceramic circuit board
JPH0597533A (ja) * 1991-03-15 1993-04-20 Toshiba Corp セラミツクス−金属接合用組成物およびセラミツクス−金属接合体
WO1996029736A1 (fr) * 1995-03-20 1996-09-26 Kabushiki Kaisha Toshiba Substrat de circuit au nitrure de silicium
JP3682552B2 (ja) * 1997-03-12 2005-08-10 同和鉱業株式会社 金属−セラミックス複合基板の製造方法
US6107638A (en) * 1997-03-14 2000-08-22 Kabushiki Kaisha Toshiba Silicon nitride circuit substrate and semiconductor device containing same
EP0935286A4 (en) * 1997-05-26 2008-04-09 Sumitomo Electric Industries COPPER CIRCUIT CONNECTING SUBSTRATE AND ITS MANUFACTURE
JP4332824B2 (ja) 1999-06-07 2009-09-16 日立金属株式会社 高熱伝導窒化ケイ素質焼結体の製造方法およびその焼結体、基板、半導体素子用回路基板
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP3775335B2 (ja) 2002-04-23 2006-05-17 日立金属株式会社 窒化ケイ素質焼結体および窒化ケイ素質焼結体の製造方法、並びにそれを用いた回路基板
JP4997431B2 (ja) 2006-01-24 2012-08-08 独立行政法人産業技術総合研究所 高熱伝導窒化ケイ素基板の製造方法
CN101849445B (zh) * 2007-11-06 2012-11-21 三菱综合材料株式会社 陶瓷基板、陶瓷基板的制造方法和电源模块用基板的制造方法
KR101472234B1 (ko) * 2010-11-22 2014-12-11 가부시끼가이샤 도시바 압접 구조용 세라믹 히트 싱크재, 그를 이용한 반도체 모듈 및 반도체 모듈의 제조 방법
US9944565B2 (en) * 2012-11-20 2018-04-17 Dowa Metaltech Co., Ltd. Metal/ceramic bonding substrate and method for producing same
JP5672324B2 (ja) * 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
EP3041045B1 (en) * 2013-08-26 2019-09-18 Mitsubishi Materials Corporation Bonded body and power module substrate
JP6256176B2 (ja) * 2014-04-25 2018-01-10 三菱マテリアル株式会社 接合体の製造方法、パワーモジュール用基板の製造方法
JP2017135374A (ja) * 2016-01-22 2017-08-03 三菱マテリアル株式会社 接合体、パワーモジュール用基板、パワーモジュール、接合体の製造方法及びパワーモジュール用基板の製造方法
KR102129339B1 (ko) 2016-06-10 2020-07-03 다나카 기킨조쿠 고교 가부시키가이샤 세라믹스 회로 기판, 및 세라믹스 회로 기판의 제조 방법
JP6904094B2 (ja) * 2016-06-23 2021-07-14 三菱マテリアル株式会社 絶縁回路基板の製造方法
EP3352214A1 (de) * 2017-01-23 2018-07-25 Siemens Aktiengesellschaft Halbleitermodul mit bodenplatte mit hohlwölbung
WO2018221492A1 (ja) * 2017-05-30 2018-12-06 デンカ株式会社 セラミックス回路基板及びその製造方法
KR102139194B1 (ko) * 2018-08-17 2020-07-30 (주) 존인피니티 질화물 세라믹스 활성금속 브레이징 기판의 제조방법
CN109400175B (zh) * 2018-11-15 2020-07-31 中国科学院上海硅酸盐研究所 一种高导热氮化硅陶瓷基片材料的制备方法
CN111253162B (zh) * 2019-02-22 2022-04-05 浙江多面体新材料有限公司 一种制备高强高韧高热导率氮化硅陶瓷的方法
CN111403347B (zh) * 2020-03-03 2022-02-25 江苏富乐华半导体科技股份有限公司 一种高可靠性氮化硅覆铜陶瓷基板的铜瓷界面结构及其制备方法
CN112142476B (zh) * 2020-09-28 2021-10-01 中国科学院上海硅酸盐研究所 一种提高氮化硅陶瓷基板材料热导率和力学性能的硅热还原方法
CN112159237B (zh) * 2020-09-28 2021-10-01 中国科学院上海硅酸盐研究所 一种高导热氮化硅陶瓷材料及其制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002293641A (ja) * 2001-03-29 2002-10-09 Hitachi Metals Ltd 窒化ケイ素質焼結体
CN1597614A (zh) * 2004-05-17 2005-03-23 清华大学 高热导率、高强度氮化硅陶瓷制造方法
EP3156366A1 (en) * 2014-06-16 2017-04-19 UBE Industries, Ltd. Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder
CN104409425A (zh) * 2014-11-13 2015-03-11 河北中瓷电子科技有限公司 高导热氮化硅陶瓷覆铜板及其制备方法
CN108383532A (zh) * 2018-05-28 2018-08-10 江苏东浦精细陶瓷科技股份有限公司 一种致密化氮化硅陶瓷材料及其制备方法
CN108585881A (zh) * 2018-06-14 2018-09-28 哈尔滨工业大学 一种高热导率氮化硅陶瓷及其制备方法
CN112811922A (zh) * 2021-01-20 2021-05-18 中国科学院上海硅酸盐研究所 一种覆铜板的氮化硅陶瓷基片及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DUAN, YUSEN. ET AL.: "Cost effective preparation of Si3N4 ceramics with improved thermal conductivity and mechanical properties", JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, vol. 40, no. 2, 5 October 2019 (2019-10-05), XP085886445, ISSN: 0955-2219, DOI: 10.1016/j.jeurceramsoc.2019.10.003 *
See also references of EP4282848A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024170536A1 (de) * 2023-02-14 2024-08-22 Rogers Germany Gmbh Verfahren zur herstellung eines metall-keramik-substrats und ein metall-keramik-substrat hergestellt mit einem solchen verfahren
WO2024170534A1 (de) * 2023-02-16 2024-08-22 Rogers Germany Gmbh Metall-keramik-substrat und verfahren zur herstellung eines metall-keramik-substrats
WO2025110091A1 (ja) * 2023-11-22 2025-05-30 日本特殊陶業株式会社 窒化ケイ素質焼結体、および窒化ケイ素質放熱基板

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