WO2022114013A1 - 気体処理装置 - Google Patents

気体処理装置 Download PDF

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Publication number
WO2022114013A1
WO2022114013A1 PCT/JP2021/043025 JP2021043025W WO2022114013A1 WO 2022114013 A1 WO2022114013 A1 WO 2022114013A1 JP 2021043025 W JP2021043025 W JP 2021043025W WO 2022114013 A1 WO2022114013 A1 WO 2022114013A1
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Prior art keywords
flow path
path portion
gas
substrate
electrode
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PCT/JP2021/043025
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English (en)
French (fr)
Japanese (ja)
Inventor
猛 宗石
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Kyocera Corp
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Kyocera Corp
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Priority to JP2022565380A priority Critical patent/JP7581375B2/ja
Publication of WO2022114013A1 publication Critical patent/WO2022114013A1/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

Definitions

  • This disclosure relates to gas treatment equipment.
  • Patent Document 1 discloses a gas processing apparatus that decomposes a fluorine-based gas generated by cleaning a plasma CVD apparatus by plasma.
  • the gas treatment apparatus has a substrate and a plurality of electrodes.
  • the substrate is made of ceramics and has a gas inlet and outlet, as well as an internal flow path connecting the inlet and outlet.
  • the plurality of electrodes are located inside the substrate.
  • the internal flow path has a first flow path portion and a second flow path portion.
  • the first flow path portion extends along the first direction, which is the flow direction of the gas introduced from the introduction port.
  • the second flow path portion extends along a second direction different from the first direction.
  • the plurality of electrodes are located so as to sandwich the second flow path portion and extend along the second flow path portion.
  • FIG. 1 is a schematic perspective view of the gas processing apparatus according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the gas processing apparatus according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view of the gas processing apparatus according to the second embodiment.
  • FIG. 4 is a schematic cross-sectional view of the gas processing apparatus according to the third embodiment.
  • FIG. 5 is a schematic cross-sectional view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 6 is a schematic plan view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 7 is a schematic bottom view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 8 is a schematic cross-sectional view taken along the line VIII-VIII shown in FIG. FIG.
  • FIG. 9 is a schematic cross-sectional view taken along the line IX-IX shown in FIG.
  • FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG.
  • FIG. 11 is a schematic cross-sectional view of the gas processing apparatus according to the fifth embodiment.
  • FIG. 1 is a schematic perspective view of the gas processing apparatus according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the gas processing apparatus according to the first embodiment. Note that FIG. 2 shows a cross-sectional view (XZ cross-sectional view) of the gas processing apparatus vertically cut along the line II-II shown in FIG.
  • the line II-II is a straight line passing through the gas introduction port 111 and the gas discharge port 121, which will be described later in the plan view of the substrate processing apparatus.
  • the gas processing apparatus 1 includes a substrate 10 having an internal flow path 15, a plurality of electrodes 20, a plurality of external electrodes 50, and a plurality of connecting conductors 55. And may have.
  • the gas processing device 1 processes the gas flowing through the internal flow path 15 by generating plasma by electric discharge between the plurality of electrodes 20.
  • the substrate 10 is made of ceramics.
  • the ceramics include aluminum oxide ceramics, yttrium oxide ceramics, zirconium oxide ceramics, silicon carbide ceramics, cordierite ceramics, silicon nitride ceramics, aluminum nitride ceramics and mulite ceramics. These ceramics are excellent in chemical resistance and mechanical strength. Therefore, the gas processing apparatus 1 having the substrate 10 made of these ceramics is highly reliable. Further, the gas treatment apparatus 1 having the substrate 10 made of aluminum oxide ceramics is excellent in processability and inexpensive.
  • the substrate 10 may have, for example, a columnar outer shape. Specifically, the substrate 10 is a third surface that connects the first surface 11 (here, the upper surface) and the second surface 12 (here, the lower surface), which are circular in a plan view, and the first surface 11 and the second surface 12. It may have a surface 13 (here, a side surface).
  • the outer shape of the substrate 10 does not necessarily have to be cylindrical.
  • the outer shape of the substrate 10 may be plate-shaped.
  • the gas introduction port 111 may be located on the first surface 11 of the substrate 10. Further, the gas discharge port 121 may be located on the second surface 12 of the substrate 10.
  • the substrate 10 may have an internal flow path 15.
  • the internal flow path 15 is located inside the substrate 10 and connects the introduction port 111 and the discharge port 121.
  • the internal flow path 15 may have a first flow path portion 151 on the introduction port side, a first flow path portion 152 on the discharge port side, and a second flow path portion 153.
  • the introduction port side first flow path portion 151 communicates with the introduction port 111.
  • the first flow path portion 151 on the introduction port side may extend along the first direction (here, the vertical direction) which is the flow direction of the gas introduced from the introduction port 111.
  • the first flow path portion 152 on the discharge port side communicates with the discharge port 121.
  • the discharge port side first flow path portion 152 may extend along the first direction in the same manner as the introduction port side first flow path portion 151.
  • the second flow path portion 153 may extend in a direction different from the first direction. Specifically, the second flow path portion 153 may extend along a direction orthogonal to the first direction (here, the horizontal direction). The second flow path portion 153 may be located between the introduction port side first flow path portion 151 and the discharge port side first flow path portion 152. In this case, the second flow path portion 153 connects the introduction port side first flow path portion 151 and the discharge port side first flow path portion 152.
  • the second direction may be at least different from the first direction, and does not necessarily have to be orthogonal to the first direction.
  • the gas introduced into the internal flow path 15 from the introduction port 111 first flows through the introduction port side first flow path portion 151 along the first direction. After that, the gas flows through the second flow path portion 153 by changing the flow direction to the second direction at the first bending portion 154 which is the connection portion between the introduction port side first flow path portion 151 and the second flow path portion 153. .. Then, the gas flows in the first direction again at the second bent portion 155, which is the connection portion between the second flow path portion 153 and the discharge port side first flow path portion 152, and the discharge port side first flow path. It flows through the section 152 and is discharged from the discharge port 121.
  • the plurality of electrodes 20 are located inside the substrate 10.
  • the gas processing apparatus 1 may have a pair of electrodes 20, 20.
  • the pair of electrodes 20 and 20 are located so as to sandwich the second flow path portion 153 and extend in parallel with the second flow path portion 153.
  • One of the pair of electrodes 20 and 20 may be located between the first surface 11 of the substrate 10 and the second flow path portion 153. Further, the remaining one of the pair of electrodes 20 and 20 is located between the second surface 12 of the substrate 10 and the second flow path portion 153.
  • the pair of electrodes 20 and 20 are embedded in the ceramics constituting the substrate 10 and are not exposed to the internal flow path 15. Therefore, the pair of electrodes 20 and 20 are unlikely to come into contact with the gas flowing through the internal flow path 15. Therefore, the pair of electrodes 20 and 20 are not corroded or damaged by the gas flowing through the internal flow path 15, and a part (fragment or the like) of the electrodes 20 is not mixed in the gas flowing through the internal flow path 15.
  • the electrode 20 may be connected to the external power supply 100 via the connecting conductor 55, the external electrode 50, and the wiring member 101.
  • the external electrode 50 is located on the third surface 13 of the substrate 10, but the external electrode 50 may be located on the first surface 11 of the substrate 10.
  • the external electrode 50 may be located on the first surface 11 or the third surface 13 surface of the substrate 10, that is, the surface other than the second surface 12 on which the discharge port 121 is located. According to such a configuration, the electrode 20 and the external power source 100 can be connected without affecting the gas discharged from the discharge port 121 or without being affected by the gas discharged from the discharge port 121. can.
  • the material of the electrode 20 may be any conductive material.
  • tungsten, molybdenum, titanium, platinum, gold, silver, copper, nickel and the like can be used as the material of the electrode 20.
  • the external electrode 50 and the connecting conductor 55 function as a conductive path for applying a voltage from the external power source 100 to the electrode 20.
  • the external electrode 50 is connected to the electrode 20 via the connecting conductor 55 and is connected to the external power supply 100 via the wiring member 101.
  • the first end of the connecting conductor 55 is connected to the electrode 20 and the second end is connected to the external electrode 50.
  • the end of the electrode 20, specifically, the end opposite to the end facing the introduction port side first flow path portion 151 or the discharge port side first flow path portion 152 is the first of the substrate 10. It may be exposed from the three sides 13. In this case, the electrode 20 and the external electrode 50 can be connected without passing through the connecting conductor 55.
  • the method of applying the voltage to the pair of electrodes 20 and 20 may be appropriately set according to the application and the like.
  • the method of applying the voltage to the pair of electrodes 20 and 20 may be a method of alternately applying the voltage.
  • a method may be used in which one is used as an application electrode and the other is used as a ground electrode.
  • an electrode 20 located between the first surface 11 of the substrate 10 and the second flow path portion 153 is used as an application electrode, and between the second surface 12 of the substrate 10 and the second flow path portion 153.
  • the positioned electrode 20 may be used as a ground electrode.
  • the gas processing apparatus 1 has a plurality of electrodes 20 located along the second flow path portion 153 between the first surface 11 of the substrate 10 and the second flow path portion 153. May be good. The same applies to the electrode 20 located between the second surface 12 of the substrate 10 and the second flow path portion 153. That is, the gas processing apparatus 1 may have a plurality of electrodes 20 located along the second flow path portion 153 between the second surface 12 of the substrate 10 and the second flow path portion 153.
  • the speed of the gas flowing through the internal flow path 15 decreases as the flow direction changes from the first direction (vertical direction) to the second direction (horizontal direction) in the first bent portion 154.
  • the residence time of the gas per unit volume in the second flow path portion 153 is longer than the residence time of the gas per unit volume in the first flow path portion 151 on the introduction port side.
  • the gas can be plasma-treated for a longer period of time as compared with the case where the plurality of electrodes 20 are provided at the positions sandwiching the first flow path portion 151 on the introduction port side. Therefore, according to the gas processing apparatus 1 according to the first embodiment, the efficiency of plasma processing can be improved.
  • the gas treatment apparatus 1 may have a discharge port side first flow path portion 152 extending along the first direction downstream of the second flow path portion 153.
  • the gas flowing through the internal flow path 15 is first from the second direction (horizontal direction) at the second bent portion 155, which is the connecting portion between the second flow path portion 153 and the discharge port side first flow path portion 152.
  • the velocity decreases as the flow direction changes in the direction (vertical direction).
  • the gas flowing through the second flow path portion 153 tends to stay in the second flow path portion 153.
  • the plasma treatment is performed.
  • the efficiency can be further improved.
  • FIG. 3 is a schematic cross-sectional view of the gas processing apparatus according to the second embodiment.
  • the substrate 10A of the gas treatment device 1A may have a plurality of introduction ports 111. According to such a configuration, more gas can be introduced into the internal flow path 15, so that the efficiency of plasma processing can be further improved.
  • the internal flow path 15A has a plurality of introduction port side first flow path portions 151, one discharge port side first flow path portion 152, and one second flow path portion 153. You may be doing it.
  • the second flow path portion 153 connects a plurality of introduction port side first flow path portions 151 and one discharge port side first flow path portion 152.
  • a plurality of (here, two) first flow paths on the inlet side are connected to both ends in the horizontal direction of the second flow path portion 153, and the first flow path on the discharge port side is connected.
  • the portion 152 is connected to the horizontal central portion of the second flow path portion 153.
  • the gas processing apparatus 1A has one electrode 20 between the first surface 11 of the substrate 10A and the second flow path portion 153, and also has the second surface 12 of the substrate 10A.
  • Two electrodes 20 may be provided between the second flow path portion 153 and the second flow path portion 153. These two electrodes 20 are positioned so as to sandwich the first flow path portion 152 on the discharge port side.
  • the electrode 20 may be integrated between the second surface 12 of the substrate 10A and the second flow path portion 153. That is, the electrodes 20 that appear to be two in the cross section shown in FIG. 3 may be connected to one when the gas processing apparatus 1A is cut in a cross section different from the cross section shown in FIG.
  • the gas processing apparatus 1A according to the second embodiment is, for example, by introducing a plurality of different gases from a plurality of introduction ports 111 into the internal flow path 15A and performing plasma treatment in the second flow path portion 153. It is also possible to react with a gas.
  • FIG. 4 is a schematic cross-sectional view of the gas processing apparatus according to the third embodiment.
  • the substrate 10B of the gas treatment device 1B may have a plurality of introduction ports 111 and a plurality of discharge ports 121. According to such a configuration, the plasma-treated gas can be discharged over a wide range.
  • the internal flow path 15B includes, for example, a plurality of introduction port side first flow path portions 151, a plurality of discharge port side first flow path portions 152, and one second flow path portion 153. May have.
  • the second flow path portion 153 connects the plurality of introduction port side first flow path portions 151 and the plurality of discharge port side first flow path portions 152.
  • a plurality of (here, three) first flow path portions 152 on the discharge port side are connected to both ends in the horizontal direction and the central portion in the horizontal direction of the second flow path portion 153.
  • the plurality of (here, two) introduction port side first flow path portions 151 are the second flow path between the two adjacent discharge port side first flow path portions 152. It is connected to the unit 153.
  • the gas processing apparatus 1B has a plurality of (here, three) electrodes 20 between the first surface 11 of the substrate 10B and the second flow path portion 153, and the substrate A plurality of (here, two) electrodes 20 may be provided between the second surface 12 of 10B and the second flow path portion 153.
  • the plurality of electrodes 20 located between the first surface 11 of the substrate 10B and the second flow path portion 153 may be integrated.
  • the plurality of electrodes 20 located between the second surface 12 of the substrate 10B and the second flow path portion 153 may be integrated.
  • the gas processing apparatus 1B may have three or more introduction ports 111.
  • FIG. 4 shows three outlets 121, the gas treatment apparatus 1B may have two or four or more outlets 121.
  • FIG. 5 is a schematic cross-sectional view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 6 is a schematic plan view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 7 is a schematic bottom view of the gas processing apparatus according to the fourth embodiment.
  • FIG. 8 is a schematic cross-sectional view taken along the line VIII-VIII shown in FIG.
  • FIG. 9 is a schematic cross-sectional view taken along the line IX-IX shown in FIG.
  • FIG. 10 is a schematic cross-sectional view taken along the line XX shown in FIG.
  • the cross-sectional view shown in FIG. 5 corresponds to the cross-sectional view taken along the line VV shown in FIG.
  • the gas treatment apparatus 1C may have a substrate 10C and a plurality of electrodes 20C.
  • the substrate 10C may have four inlets 111 (see FIG. 6) and one outlet 121 (see FIG. 7).
  • the number of introduction ports 111 included in the substrate 10C is not limited to four.
  • the number of introduction ports 111 included in the substrate 10C may be, for example, one or five or more.
  • the substrate 10C may have two or more discharge ports 121.
  • the electrode 20C may have a space inside (hereinafter, referred to as "internal space 30").
  • the internal space 30 extends along the electrode 20C. In other words, the internal space 30 extends along the second flow path portion 153.
  • the electrode 20C may have an internal space 30.
  • the electrode 20C thermally expands when the temperature of the substrate 10C rises due to, for example, plasma treatment. Since the thermal expansion of the electrode 20C having the internal space 30 is relaxed by the internal space 30, cracks and the like occur due to the difference in the coefficient of thermal expansion between the electrode 20C and the substrate 10C as compared with the electrode having no internal space. It can be suppressed. Thereby, the reliability of the gas processing apparatus 1C can be improved.
  • the electrode 20C is located between the internal space 30 and the substrate 10C, and there is no place where the substrate 10C, the electrode 20C, and the internal space 30 are in contact with each other. Concentration is hard to occur. As a result, abnormal discharge is suppressed, so that the reliability of the gas processing apparatus 1C can be improved.
  • the internal flow path 15C has four introduction port side first flow path portions 151 (see FIG. 8) and one second flow path portion 153 (FIG. 8). 9) and one discharge port side first flow path portion 152 (see FIG. 10) may be provided.
  • the second flow path portion 153 is in one direction (for example, the X axis) in the second direction (horizontal direction). It does not extend only in the direction (or Y-axis direction), but spatially extends in all directions in the second direction. Since the volume of the second flow path portion 153 is larger than that of the introduction port side first flow path portion 151, the second flow path portion 153 functions as a space for retaining gas. That is, the internal flow path 15C according to the fourth embodiment can sufficiently reduce the speed of the gas when the gas flows into the second flow path portion 153 from the introduction port side first flow path portion 151. Therefore, the gas can be plasma treated for a longer period of time.
  • the outer edge 200 of the pair of electrodes 20C and 20C in the second direction (horizontal direction) and the outer edge 150 of the second flow path portion 153 in the second direction are viewed in a plan section. Is almost the same. As described above, since almost the entire area of the second flow path portion 153 is sandwiched by the pair of electrodes 20C and 20C, the efficiency of plasma processing can be further improved.
  • the electrode 20C may cover the entire inner wall surface of the substrate 10C constituting the internal space 30.
  • a plating film can be used as such an electrode 20C.
  • the outer edge 200 of the electrode 20C may be exposed from the third surface 13 of the substrate 10C.
  • the electrode 20 and the external electrode 50 can be connected without passing through the connecting conductor 55.
  • the external electrode 50 may be located on the first surface 11 of the substrate 10C.
  • FIG. 11 is a schematic cross-sectional view of the gas processing apparatus according to the fifth embodiment.
  • the gas treatment apparatus 1D may have a substrate 10D and a plurality of electrodes 20D.
  • the substrate 10D may have a plurality of introduction ports 111 and one discharge port 121, as in the case of the substrate 10A according to the second embodiment, for example. Further, the substrate 10D may have an internal flow path 15D. Similar to the internal flow path 15A according to the second embodiment, the internal flow path 15D includes a plurality of introduction port side first flow path portions 151, one discharge port side first flow path portion 152, and one second flow path portion 152. It may have a flow path portion 153. Not limited to this example, the substrate 10D may have the same configuration as the substrate 10 according to the first embodiment, the substrate 10B according to the third embodiment, and the substrate 10C according to the fourth embodiment.
  • the electrode 20D may have a first electrode portion 21 extending along the introduction port side first flow path portion 151 and a second electrode portion 22 extending along the second flow path portion 153.
  • the first electrode portions 21 of the pair of electrodes 20D and 20D are positioned so as to sandwich the introduction port side first flow path portion 151.
  • the second electrode portions 22 of the pair of electrodes 20D and 20D are positioned so as to sandwich the second flow path portion 153.
  • the plurality of electrodes 20D are positioned so as to sandwich the first flow path portion 151 on the introduction port side, and the pair of first electrode portions 21 and 21 extending in parallel with the first flow path portion 151 on the introduction port side. It may have a pair of second electrode portions 22, 22 located so as to sandwich the second flow path portion 153 and extending along the second flow path portion 153. According to such a configuration, the gas can be plasma-treated not only in the second flow path portion 153 but also in the introduction port side first flow path portion 151, so that the efficiency of plasma treatment can be further improved.
  • first electrode portion 21 and the second electrode portion 22 may be connected to each other.
  • the gas can be plasma-treated at the first bent portion 154, which is the connecting portion between the first flow path portion 151 on the introduction port side and the second flow path portion 153, so that the efficiency of plasma processing can be improved. It can be further improved.
  • the electrode 20D may be exposed on the first surface 11 of the substrate 10D at the end of the second electrode portion 22. According to such a configuration, for example, the electrode 20D can be connected to the external power source 100 without using the connecting conductor 55.
  • the internal space 30D of the electrode 20D also extends along the second flow path portion 153 and also extends along the introduction port side first flow path portion 151, and the first surface 11 of the substrate 10D at the end thereof. Is exposed to.
  • the internal space 30D may communicate with the outside. According to such a configuration, for example, it is possible to supply the temperature control fluid from the outside to the internal space 30D.
  • the temperature of the substrate 10D can be adjusted, so that the efficiency of plasma processing can be improved.
  • the electrode 20D can be cooled by supplying the temperature control fluid to the internal space 30D, the generation of cracks due to the difference in the coefficient of thermal expansion between the substrate 10D and the electrode 20D can be suitably suppressed. Therefore, the reliability of the gas processing apparatus 1D can be improved.
  • the thickness T1 of the substrate 10D, the thickness T2 of the electrode 20D, and the thickness T3 of the internal space 30D can be appropriately determined according to the intended use.
  • the thickness T1 of the substrate 10D may be 1 mm or more and 20 mm or less.
  • the thickness T2 of the electrode 20D may be 100 ⁇ m or more and 4 mm or less.
  • the thickness T3 of the internal space 30D may be 0.5 mm or more and 2 mm or less.
  • the gas processing devices 1, 1A to 1D described above can be used, for example, in the fields of electronic component manufacturing, energy, medical, and the like.
  • Applications in the field of electronic component manufacturing include, for example, plasma assist for process gas and surface modification gas, ozoneification of oxygen gas for ashing, hydrogen ion generation by plasma decomposition of ammonia gas and cyan gas, and plasma decomposition of fluorine-based gas. And so on. Further, it can also be used for producing an oxygen source for an ALD (atomic layer deposition) membrane and ozone for cleaning.
  • ALD atomic layer deposition
  • examples of applications in the medical field include inert gas such as rare gas and nitrogen gas used in a plasma cleaning device, plasma assist in the atmosphere, plasma assist in a rare gas used in a gene transfer device, and the like.
  • a sintering aid, a binder, a solvent and the like are added to the powder of the raw material as the main component and appropriately mixed to prepare a slurry.
  • a green sheet is formed by a doctor blade method, and punched by a die or laser processing is performed to obtain a green sheet having a desired shape.
  • the slurry is spray-dried to obtain granulated granules. After that, the granules are rolled to form a green sheet, which is punched by a die or laser-processed to obtain a green sheet having a desired shape.
  • a conductive paste containing a conductive component and print it on the green sheet where you want to form the electrodes.
  • the connecting conductor is provided in the thickness direction of the substrate, a through hole may be provided in the green sheet and the conductive paste may be inserted. If the connecting conductor is provided in the width direction of the substrate, the conductive paste is printed to the end of the green sheet, or if grinding is performed after cutting or firing after laminating, the connecting conductor is connected to the position where the connecting conductor is exposed after cutting or grinding. All you have to do is print the conductor.
  • a molded product is obtained by laminating a plurality of green sheets. Further, a sintered body is obtained by firing this molded body.
  • the external electrode is joined to the connecting conductor of the sintered body.
  • the connection conductor and the external electrode can be joined by, for example, soldering, brazing, a conductive adhesive, or the like. Further, the connecting conductor and the external electrode may be mechanically joined by using a screw, a spring or the like. Thereby, a gas processing apparatus can be obtained.
  • the position where the external electrode is provided is not particularly limited, and may be the side surface, the upper surface, or the like of the sintered body. Further, a sealing member such as an O-ring may be provided at the take-out position of the external electrode. As a result, the inside of the sintered body can be shielded from the surrounding atmosphere.
  • a green sheet is processed to form a space, and a conductive paste is applied around the portion, which is then laminated to form a molded body, which is then fired.
  • a conductive paste is applied around the portion, which is then laminated to form a molded body, which is then fired.
  • the internal space communicates with the outside of the substrate
  • the molded body having a cavity communicating with the outside is fired in advance, and then electroless plating is performed, or the conductive paste is poured into the cavity and then heat-treated.
  • a conductor is formed around the cavity, and an electrode having a space can be formed.
  • the gas treatment apparatus (as an example, the gas treatment apparatus 1, 1A to 1D) according to the embodiment includes a substrate (as an example, the substrates 10, 10A to 10D) and a plurality of electrodes (as an example, electrodes). 20, 20C, 20D) and.
  • the substrate is made of ceramics, and has a gas introduction port (for example, introduction port 111) and an discharge port (for example, discharge port 121), and an internal flow path connecting the introduction port and the discharge port (for example, an internal flow). It has roads 15, 15A to 15D).
  • the plurality of electrodes are located inside the substrate.
  • the internal flow paths are the first flow path portion (for example, the introduction port side first flow path portion 151 and the discharge port side first flow path portion 152) and the second flow path portion (for example, the second flow path portion). It has a road portion 153).
  • the first flow path portion extends along the first direction (as an example, the vertical direction), which is the flow direction of the gas introduced from the introduction port.
  • the second flow path portion extends along a second direction (for example, a horizontal direction) different from the first direction.
  • the plurality of electrodes are located so as to sandwich the second flow path portion and extend along the second flow path portion.
  • the efficiency of plasma processing can be improved.
  • the internal flow path communicates with the first flow path portion on the introduction port side (for example, the first flow path portion 151 on the introduction port side) extending along the first direction, and communicates with the discharge port to form the first flow path. It may have a first flow path portion on the discharge port side (for example, a first flow path portion 152 on the discharge port side) extending along the direction.
  • the introduction port side first flow path portion and the discharge port side first flow path portion may be connected by a second flow path portion. According to this configuration, at the connection portion (bending portion) between the second flow path portion and the first flow path portion on the discharge port side, the gas flow direction changes from the second direction to the first direction, and the gas flows. Since the speed is reduced, the gas flowing through the second flow path portion is more likely to stay in the second flow path portion. Thereby, the efficiency of plasma processing can be further improved.
  • the internal flow path may have a plurality of introduction port side first flow path portions and a plurality of discharge port side first flow path portions.
  • the plurality of introduction port side first flow path portions and the plurality of discharge port side first flow path portions may be connected by one second flow path portion.
  • the electrode may have a space inside (for example, internal spaces 30 and 30A). According to such a configuration, since the thermal expansion of the electrode is relaxed by the space, it is possible to suppress the occurrence of cracks and the like due to the difference in the coefficient of thermal expansion between the electrode and the substrate. This makes it possible to improve the reliability of the gas processing apparatus.
  • the space may communicate with the outside of the substrate. According to such a configuration, for example, it is possible to supply the temperature control fluid to the space from the outside.
  • the plurality of electrodes are located so as to sandwich the first flow path portion, and a pair of first electrode portions (for example, the first electrode portions 21 and 21) extending along the first flow path portion and the second flow path portion. It may have a pair of second electrode portions (for example, the second electrode portions 22, 22) which are located so as to sandwich the portions and extend along the second flow path portion.
  • the gas can be plasma-treated not only in the second flow path portion but also in the first flow path portion, so that the efficiency of plasma treatment can be further improved.
  • the first electrode portion and the second electrode portion may be connected to each other. According to such a configuration, the gas can be plasma-treated at the connecting portion (bending portion) between the first flow path portion and the second flow path portion, so that the efficiency of plasma processing can be further improved.
  • 1,1A to 1D Gas treatment device 10, 10A to 10D: Base 11: First surface 12: Second surface 13: Third surface 15, 15A to 15D: Internal flow path 20, 20C, 20D: Electrode 21: First 1 electrode part 22: 2nd electrode part 30, 30D: internal space 111: introduction port 121: discharge port 151: introduction port side first flow path part 152: discharge port side first flow path part 153: second flow path part 154: First bent portion 155: Second bent portion

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PCT/JP2021/043025 2020-11-30 2021-11-24 気体処理装置 Ceased WO2022114013A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11343105A (ja) * 1994-04-28 1999-12-14 Mitsubishi Electric Corp オゾン発生装置
JP2005108482A (ja) * 2003-09-29 2005-04-21 E Square:Kk プラズマ表面処理装置
JP2006509331A (ja) * 2002-12-02 2006-03-16 セム テクノロジー コーポレーション リミテッド 大気圧プラズマを利用した表面処理装置
JP2009170267A (ja) * 2008-01-16 2009-07-30 Ngk Insulators Ltd セラミックプラズマ反応器、及びプラズマ反応装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11343105A (ja) * 1994-04-28 1999-12-14 Mitsubishi Electric Corp オゾン発生装置
JP2006509331A (ja) * 2002-12-02 2006-03-16 セム テクノロジー コーポレーション リミテッド 大気圧プラズマを利用した表面処理装置
JP2005108482A (ja) * 2003-09-29 2005-04-21 E Square:Kk プラズマ表面処理装置
JP2009170267A (ja) * 2008-01-16 2009-07-30 Ngk Insulators Ltd セラミックプラズマ反応器、及びプラズマ反応装置

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