WO2022092207A1 - Film stratifié et procédé de fabrication d'un capteur de contrainte - Google Patents

Film stratifié et procédé de fabrication d'un capteur de contrainte Download PDF

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Publication number
WO2022092207A1
WO2022092207A1 PCT/JP2021/039828 JP2021039828W WO2022092207A1 WO 2022092207 A1 WO2022092207 A1 WO 2022092207A1 JP 2021039828 W JP2021039828 W JP 2021039828W WO 2022092207 A1 WO2022092207 A1 WO 2022092207A1
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Prior art keywords
laminated film
less
resistance layer
base film
sample
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PCT/JP2021/039828
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English (en)
Japanese (ja)
Inventor
一裕 中島
智史 安井
克則 澁谷
智剛 梨木
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日東電工株式会社
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Publication of WO2022092207A1 publication Critical patent/WO2022092207A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/022—Mechanical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge

Definitions

  • the present invention relates to a method for manufacturing a laminated film and a strain sensor.
  • strain gauges are required to suppress fluctuations in the temperature resistance coefficient due to storage in a moist heat environment.
  • the strain gauge described in Patent Document 1 has a problem that the above-mentioned requirements cannot be sufficiently satisfied.
  • the present invention provides a method for manufacturing a laminated film and a strain sensor in which fluctuations in the temperature resistance coefficient due to storage in a moist heat environment are suppressed and crack formation is suppressed.
  • the present invention (1) is a laminated film in which an insulating base film and a resistance layer are sequentially provided in the thickness direction, the thickness of the resistance layer is 150 nm or less, and the laminated film is placed in the thickness direction.
  • Samples were prepared by cutting so that the lengths of the first and second directions orthogonal to each other and orthogonal to each other were 15 mm and 5 mm, respectively, and the sample was prepared at 85 ° C. and 85% RH for 4 hours.
  • the absolute value of the dimensional change rate in each of the first direction and the second direction after pulling both ends of the sample in the first direction with a force of 49 mN / 5 mm is 0.025% or less.
  • the absolute value of the dimensional change rate of each of the laminated films in the first direction and the second direction is 0.025% or less, so that the temperature resistance coefficient fluctuates due to storage in a moist heat environment. It is suppressed. Further, in the laminated film of the present invention, since the thickness of the resistance layer is 150 nm or less, the formation of cracks can be suppressed.
  • an insulating base film and a resistance layer are provided in order in the thickness direction, the thickness of the resistance layer is 150 nm or less, and the base film is orthogonal to the thickness direction.
  • a sample was prepared by cutting so that the lengths of the first direction and the second direction orthogonal to each other were 15 mm and 5 mm, respectively, and the sample was prepared in an atmosphere of 85 ° C. and 85% RH for 4 hours.
  • the absolute value of the dimensional change rate in each of the first direction and the second direction after pulling both ends in the first direction with a force of 49 mN / 5 mm is 0.040% or less, both of which are laminated films. including.
  • the absolute value of the dimensional change rate of the base film in each of the first direction and the second direction is 0.040% or less, so that the laminated film has a temperature due to storage in a moist heat environment. Fluctuations in the drag coefficient are suppressed. Further, in the laminated film of the present invention, since the thickness of the resistance layer is 150 nm or less, the formation of cracks can be suppressed.
  • the present invention (3) includes the laminated film according to (1) or (2), wherein the resistance layer contains chromium nitride.
  • the present invention (4) includes the laminated film according to (1) to (3), wherein the base film is polyimide or polyethylene naphthalate.
  • the present invention (5) includes a method for manufacturing a strain sensor, which forms a strain sensor portion by patterning the resistance layer in the laminated film according to (1) and (2).
  • the manufacturing method of the present invention it is possible to manufacture a strain sensor in which fluctuations in the temperature resistance coefficient due to storage in a moist heat environment are suppressed and crack formation is suppressed.
  • the fluctuation of the temperature resistance coefficient due to storage in a moist heat environment is suppressed, and the generation of cracks is suppressed.
  • FIG. 1 is a cross-sectional view of a laminated film according to an embodiment of the present invention.
  • 2A to 2B are strain sensors in which the resistance layer shown in FIG. 1 is patterned,
  • FIG. 2A is a cross-sectional view, and
  • FIG. 2B is a plan view.
  • FIG. 3 is a cross-sectional view of a base film for which the dimensional change rate is to be measured.
  • the laminated film 1 is a film for a strain sensor used for manufacturing a strain sensor 15 (see FIGS. 2A to 2B) described later. That is, the laminated film 1 is an intermediate member for manufacturing the strain sensor 15. However, the laminated film 1 is a device that is distributed as a single component and can be industrially used.
  • the laminated film 1 extends in a plane direction orthogonal to the thickness direction. Specifically, the laminated film 1 includes a base film 2 and a resistance layer 3 in order toward one side in the thickness direction.
  • the base film 2 is insulating.
  • the base film 2 forms the other side of the laminated film 1 in the thickness direction.
  • the base film 2 extends in the plane direction.
  • the coefficient of thermal expansion of the base film 2 from 25 ° C. to 155 ° C. is, for example, 28 ppm / ° C. or less, preferably 28 ppm / ° C. or less in either the first direction or the second direction orthogonal to the thickness direction and orthogonal to each other. , 20 ppm / ° C. or lower, more preferably 17 ppm / ° C. or lower, and for example, 1 ppm / ° C. or higher.
  • the absolute value (described later) of the dimensional change rate of the laminated film 1 can be set within a predetermined range.
  • the method for measuring the coefficient of thermal expansion is measured according to, for example, JIS K 7197 (1991).
  • the heat shrinkage of the base film 2 at 200 ° C. is, for example, 0.05% or less, preferably 0.04% or less, more preferably 0.03% or less, and particularly preferably 0.02%. And, for example, over 0%.
  • the absolute value (described later) of the dimensional change rate of the laminated film 1 can be set within a predetermined range.
  • the coefficient of thermal expansion is measured according to the description of JIS K 7133 (1999).
  • the material of the base film 2 is not particularly limited, and specifically, a material having the above-mentioned range of the coefficient of thermal expansion and / or the coefficient of heat shrinkage is selected.
  • the material of the base film 2 include resins such as polyimide (PI) and polyethylene naphthalate (PEN). These can be used alone or in combination.
  • PI and PEN are mentioned from the viewpoint of obtaining a low coefficient of thermal expansion and a low coefficient of thermal contraction.
  • Commercially available products can be used as the base film 2, for example, Kapton 200V, Kapton 200EN, Kapton 150EN (above, polyimide film manufactured by Toray DuPont), Theonex series (polyethylene naphthalate film manufactured by Teijin Co., Ltd.). Etc. are used.
  • the thickness of the base film 2 is not particularly limited, and is, for example, 2 ⁇ m or more, preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, and for example, 500 ⁇ m or less, preferably 300 ⁇ m or less, more preferably. It is 100 ⁇ m or less.
  • a corona discharge treatment an ultraviolet irradiation treatment, a plasma treatment, a sputtering etching treatment, or the like can be applied to one surface of the base film 2 in the thickness direction.
  • the resistance layer 3 is a layer that is patterned when the strain sensor 15 (see FIGS. 2A to 2B) is manufactured from the laminated film 1.
  • the resistance layer 3 is arranged on one side of the base film 2 in the thickness direction.
  • the resistance layer 3 forms one side of the laminated film 1 in the thickness direction. Specifically, the resistance layer 3 is in contact with all of one surface of the base film 2 in the thickness direction.
  • the resistance layer 3 contains chromium nitride. Specifically, the material of the resistance layer 3 contains chromium nitride as a main component. On the other hand, the material of the resistance layer 3 is allowed to be mixed with unavoidable impurities, for example. The proportion of unavoidable impurities in the resistance layer 3 is, for example, 1 atomic% or less, preferably 0.1 atomic% or less, and more preferably 0.05 atomic% or less. Preferably, the resistance layer 3 is made of chromium nitride.
  • the molar portion of the nitrogen atom with respect to 100 mol parts of the chromium atom is, for example, 1.0 mol part or more, and for example, 10.0 mol parts or less.
  • the mole portion of the nitrogen atom relative to 100 mole parts of the chromium atom is measured by Rutherford Backscattering Analysis (RBS).
  • the thickness of the resistance layer 3 is 150 nm or less. On the other hand, if the thickness of the resistance layer 3 exceeds 150 nm, cracks are likely to occur in the resistance layer 3.
  • the thickness of the resistance layer 3 is preferably 100 nm or less, more preferably 90 nm or less, further preferably 80 nm or less, and for example, 10 nm or more, preferably 20 nm or more. If the thickness of the resistance layer 3 is at least the above-mentioned lower limit, a high gauge ratio can be secured.
  • the laminated film 1 is formed by a roll-to-roll method.
  • a long base film 2 is prepared.
  • the thermal expansion coefficient of 50 to 200 ° C. in the first direction of the base film 2 is The absolute value is, for example, 28 ppm / ° C. or lower, preferably 20 ppm / ° C. or lower, more preferably 15 ppm / ° C. or lower, and for example, 1 ppm / ° C. or higher.
  • the absolute value of the coefficient of thermal expansion at 50 to 200 ° C. in the second direction of the base film 2 is, for example, 28 ppm / ° C. or less, preferably 15 ppm / ° C. or less, more preferably 10 ppm / ° C. or less, and also. For example, it is 0.5 ppm / ° C. or higher.
  • the resistance layer 3 is formed on one side of the base film 2 in the thickness direction while conveying the long base film 2.
  • the film forming method include a sputtering method, a vacuum vapor deposition method, and an ion plating method. Sputtering methods are preferred, and reactive sputtering is more preferred.
  • the target is composed of chromium, and a mixed gas of an inert gas such as argon and nitrogen is used as the sputtering gas.
  • the volume of nitrogen with respect to 100 parts by volume of the inert gas is, for example, 0.5 to 15 parts by volume.
  • the laminated film 1 provided with the base film 2 and the resistance layer 3 is produced.
  • the laminated film 1 is heated in order to increase the crystallinity of the resistance layer 3 and improve the stability.
  • the heating temperature is not particularly limited, and is, for example, 100 ° C. or higher, preferably 125 ° C. or higher, and for example, 200 ° C. or lower, preferably 180 ° C. or lower.
  • the heating time is, for example, 1 minute or more, preferably 5 minutes or more, and for example, 3 hours or less, preferably 2 hours or less.
  • the laminated film 1 including the base film 2 and the resistance layer 3 is obtained.
  • the absolute value of the dimensional change rate in each of the first direction and the second direction of the laminated film 1 is 0.025% or less. Since the absolute value of the dimensional change rate in each of the first direction and the second direction of the laminated film 1 is 0.025% or less, the fluctuation of the temperature resistance coefficient due to storage in a moist heat environment is suppressed.
  • the absolute value of the dimensional change rate of the laminated film 1 in each of the first direction and the second direction is preferably 0.020% or less, more preferably 0.010% or less, still more preferably 0. It is 005% or less, particularly preferably 0.003% or less, and for example, 0.000% or more.
  • the laminated film 1 is cut so that the lengths of the laminated film 1 in the first direction and the second direction are 18 mm and 5 mm, respectively.
  • both ends of the sample in the first direction are fixed using a chuck jig so that the distance between them is 15 mm, and the sample is pulled with a force of 49 mN / 5 mm for 4 hours in an atmosphere of 85 ° C. and 85% RH.
  • the dimensional change rate in the first direction is obtained by the following formula.
  • the dimensional change rate in the second direction is also measured.
  • the difference in the temperature coefficient of resistance of the resistance layer 3 before and after storage at 85 ° C. and 85% RH for 240 hours is, for example, 100 ppm / ° C. or less, preferably 55 ppm / ° C. or less, more preferably 50 ppm / ° C. or less, still more preferable. Is 35 ppm / ° C. or lower, particularly preferably 30 ppm / ° C. or lower, and is, for example, 1 ppm / ° C. or higher.
  • the difference between the resistance temperature coefficients before and after storage is equal to or less than the above-mentioned upper limit, the measurement accuracy of the strain sensor 15 is improved.
  • one side and the other side in the thickness direction of the laminated film 1 are fixed with a glass plate, and the atmosphere is 85 ° C. and 85% RH. Store under 240 hours. Find the difference in temperature coefficient of resistance before and after storage. Details of how to obtain the difference in the temperature coefficient of resistance before and after storage will be described in a later example.
  • the resistance layer 3 in the above-mentioned laminated film 1 is patterned to form the resistance pattern 4.
  • Examples of the method for patterning the resistance layer 3 include etching, and specific examples thereof include dry etching, wet etching, preferably dry etching, and more preferably laser etching.
  • the resistance pattern 4 integrally includes the strain sensor unit 5, the terminal 6, and the wiring 7.
  • the strain sensor unit 5 has a substantially knotted shape in a plan view. Specifically, the strain sensor unit 5 has a plurality of first lines 8, a plurality of first connection lines 9, and a plurality of second connection lines 10.
  • Each of the plurality of first lines 8 extends along the first direction.
  • the plurality of first lines 8 are arranged so as to be spaced apart from each other in the second direction.
  • the plurality of first connecting lines 9 connect one end of the first line 8 adjacent to the second direction in the first direction.
  • the plurality of second connecting lines 10 connect the other ends of the first lines 8 adjacent to each other in the second direction in the first direction. When projected in the first direction, the first connecting line 9 and the second connecting line 10 are arranged alternately.
  • the terminal 6 is separated from the strain sensor unit 5 in the plane direction.
  • the terminal 6 has, for example, a land shape having a substantially rectangular shape in a plan view. Two terminals 6 are provided at intervals.
  • the wiring 7 connects the two terminals 6 and both ends of the strain sensor unit 5.
  • one conductive path is formed from one terminal 6 through one wiring 7, the strain sensor unit 5 and another wiring 7 to the other terminal 6.
  • the dimensions of the strain sensor unit 5 are appropriately set according to the application and purpose.
  • the width of the first line 8, the first connecting line 9 and the second connecting line 10 is, for example, 1 ⁇ m or more, preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more, and for example, 150 ⁇ m or less, preferably preferably. It is 100 ⁇ m or less, more preferably 70 ⁇ m or less.
  • the shape of the base film 2 is also appropriately set according to the application and purpose of the strain sensor 15, and becomes a desired dimension by, for example, external processing.
  • the base film 2 of the strain sensor 15 is attached to the surface of the subject 20 via the adhesive layer 21. Further, the lead wire 23 is connected to the two terminals 6 via the conductive adhesive layer 22. The lead wire 23 is electrically connected to an external resistance measurement circuit (not shown).
  • the resistance value of the distortion sensor unit 5 changes. Based on this, the amount of strain is calculated in the resistance measurement circuit.
  • the strain amount of the subject 20 is calculated.
  • the absolute value of the dimensional change rate of each of the laminated films 1 in the first direction and the second direction is 0.025% or less, so that the temperature resistance coefficient due to storage in a moist heat environment is Fluctuations are suppressed. Further, in the laminated film 1, since the thickness of the resistance layer 3 is 150 nm or less, the formation of cracks can be suppressed.
  • the manufacturing method of the first embodiment it is possible to manufacture the strain sensor 15 in which the fluctuation of the temperature resistance coefficient due to storage in a moist heat environment is suppressed and the generation of cracks is suppressed.
  • the dimensions in the first direction and the second direction are the long direction (MD direction) manufactured by the roll-to-roll method as the first direction and the width direction (TD direction) as the second direction.
  • MD direction long direction
  • TD direction width direction
  • any one direction orthogonal to the thickness direction is set as the first direction, and the direction orthogonal to the direction is set as the second direction, and the dimensional change rate in those directions is obtained. be able to.
  • the absolute value of the dimensional change rate of the laminated film 1 in each of the first direction and the second direction is 0.025% or less.
  • the first embodiment defines the dimensional change rate of the laminated film 1, but the present invention is not limited to this, and as shown in FIG. 3, the second embodiment defines the dimensional change rate of the base film 2. be able to.
  • the base film 2 that is the target of the dimensional change rate is, specifically, the long base film 2 that is prepared first.
  • the absolute value of the dimensional change rate in the first direction and the second direction after storing this base film 2 in an atmosphere of 85 ° C. and 85% RH for 4 hours is 0.040% or less.
  • the absolute value of the dimensional change rate of at least one of the first direction and the second direction exceeds 0.040%, the fluctuation of the temperature resistance coefficient due to storage in a moist heat environment is not suppressed.
  • the absolute value of the dimensional change rate of the base film 2 in each of the first direction and the second direction is preferably 0.020% or less, more preferably 0.010% or less, still more preferably 0. It is .005% or less, particularly preferably 0.004% or less, and for example, 0.000% or more.
  • the method of determining the dimensional change rate of the base film 2 is the same as that of the laminated film 1.
  • the long direction of the base film 2 is the first direction and the width direction is the second direction.
  • the dimensional change rate of the base film 2 in the first direction is, for example, 0.025% or less, more preferably 0.010% or less, still more preferably 0.005% or less, and particularly preferably 0.004%. And, for example, over 0.000%.
  • the dimensional change rate of the base film 2 in the second direction is, for example, 0.040% or less, more preferably 0.010% or less, still more preferably 0.007% or less, and particularly preferably 0.005%. And, for example, over 0.000%.
  • the base film 2 prepared for the production of the laminated film 1 is not the base film 2 after being pulled for 4 hours (high temperature and high humidity tensile test) in an atmosphere of 85 ° C. and 85% RH, but the above-mentioned wet heat. It is a base film 2 having no history of deformation (high temperature and high humidity tensile test) (so-called untreated). That is, the above-mentioned high-temperature and high-humidity tensile test is a step necessary for measurement for obtaining the dimensional change rate, and is not a step for manufacturing the base film 2.
  • a resistance layer 3 is formed on one surface of the base film 2 having the above-mentioned specific dimensional change rate in the thickness direction in the same manner as in one embodiment, and if necessary, the resistance layer 3 is heated. To obtain the laminated film 1.
  • the resistance layer 3 of the laminated film 1 is patterned to form the strain sensor unit 5.
  • the absolute value of the dimensional change rate of the base film 2 in each of the first direction and the second direction is 0.040% or less, so that the temperature resistance coefficient due to storage in a moist heat environment Fluctuations are suppressed. Further, in the laminated film 1, since the thickness of the resistance layer 3 is 150 nm or less, the formation of cracks can be suppressed.
  • the manufacturing method of the second embodiment it is possible to manufacture the strain sensor 15 in which the fluctuation of the temperature resistance coefficient due to the storage in a moist heat environment is suppressed and the generation of cracks is suppressed.
  • the dimensional change rate of the base film 2 before the laminated film 1 is manufactured is specified, but the resistance layer 3 in the laminated film 1 is removed after the laminated film 1 is manufactured.
  • the dimensional change rate of the base film 2 after that may be in the above range.
  • the dimensional change rate of the laminated film 1 satisfies the range of the first embodiment (0.025% or less), and the dimensional change rate of the base film 2 is within the range of the second embodiment (0.040% or less). ) May be satisfied.
  • the dimensional change rate of the laminated film 1 satisfies the range of the first embodiment
  • the dimensional change rate of the base film 2 satisfies the range of the second embodiment.
  • Examples and comparative examples are shown below, and the present invention will be described in more detail.
  • the present invention is not limited to Examples and Comparative Examples.
  • specific numerical values such as the compounding ratio (content ratio), physical property values, parameters, etc. used in the following description are described in the above-mentioned "form for carrying out the invention", and the compounding ratios corresponding to them (Substitute the upper limit value (value defined as “less than or equal to” or “less than”) or the lower limit value (value defined as "greater than or equal to” or “excess”) such as content ratio), physical property value, parameter, etc. be able to.
  • Example 1 A base film 2 having a thickness of 50 ⁇ m made of a polyimide film (Kapton 200 V) manufactured by Toray DuPont was prepared.
  • the base film 2 was set in the sputtering apparatus. After exhausting the inside of the sputtering apparatus until the degree of vacuum becomes 1 ⁇ 10 -3 Pa or less, the resistance layer 3 made of chromium nitride is subjected to reactive pulse DC sputtering (pulse width: 1 ⁇ s, frequency: 100 kHz) under the following conditions. Was formed.
  • Target Chrome, flat plate shape of 500 mm x 150 mm Power: 5 kW (Power density: 6.7 W / cm 2 ) Magnetic flux density (target surface): 30 mT Substrate temperature: 150 ° C Sputtering gas: Mixed gas of argon and nitrogen Film formation pressure: 0.085 Pa
  • the number of parts of nitrogen gas introduced into the sputtering apparatus was adjusted so as to be as shown in Table 1 with respect to 100 parts by volume of argon gas introduced into the sputtering apparatus.
  • the laminated film 1 was heated (annealed) at 155 ° C. for 60 minutes.
  • Example 2 to Comparative Example 2 The treatment was carried out in the same manner as in Example 1 except that the type of the base film 2, the thickness of the base film 2, the amount of nitrogen introduced during sputtering, the thickness of the resistance layer 3 and the like were changed according to the description in Table 1.
  • the laminated film 1 was manufactured.
  • FIB device Hitachi FB2200, acceleration voltage: 40kV
  • FE-TEM device JEOL JEM-2800, acceleration voltage: 200kV
  • the laminated film 1 was cut into a size of 10 mm ⁇ 200 mm, and the resistance layer 3 was patterned into a knotted shape having a width of 30 ⁇ m by laser patterning to prepare a strain sensor 15. At this time, the patterning was adjusted so that the resistance of the wiring 7 was about 10 k ⁇ and the resistance of the strain sensor unit 5 was 30 times the resistance of the wiring 7.
  • a sample was prepared by laminating glass plates on both sides of the strain sensor 15 via an adhesive.
  • the temperature of the strain sensor unit 5 of the sample was set to 5 ° C.
  • a tester was connected to each of the two terminals 6, a constant current was passed, and the voltage was read to measure the two-terminal resistance at 5 ° C. Similarly, the two-terminal resistance at 25 ° C and 45 ° C was measured.
  • the resistance temperature coefficient calculated from the resistance values of 5 ° C. and 25 ° C. and the average value of the resistance temperature coefficient calculated from the resistance values of 25 ° C. and 45 ° C. are set to the resistance temperature of the strain sensor unit 5 (resistance layer 3). Obtained as a coefficient.
  • the above sample was stored at 85 ° C. and 85% RH for 240 hours.
  • the resistance temperature coefficient of the strain sensor unit 5 in the sample after storage was determined.
  • Dimensional change rate of laminated film A sample was prepared by cutting the size of the long laminated film 1 into a size of 15 mm ⁇ 5 mm.
  • the length of the sample, 15 mm corresponded to the length of the laminated film 1 in the long direction (first direction) (MD direction).
  • the width of the sample of 5 mm corresponded to the length of the laminated film 1 in the width direction (second direction) (TD direction).
  • the sample was set in a thermomechanical analyzer (TMA 4000SE, manufactured by Netch Japan Co., Ltd.). Specifically, the chuck gripped one end and the other end of the sample in the length direction. The measuring chamber was set at 85 ° C. and 85% RH. The sample was pulled with a force of 49 mN / 5 mm for 4 hours.
  • TMA 4000SE thermomechanical analyzer
  • Laminated film is used in the manufacture of strain sensors.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Laminated Bodies (AREA)

Abstract

La présente invention concerne un film stratifié (1) qui est disposé, dans l'ordre dans la direction d'épaisseur, avec un film de base isolant (2) et une couche de résistance (3). L'épaisseur de la couche de résistance (3) est au plus égale à 150 nm. Un échantillon a été préparé en découpant le film stratifié (1) pour que les longueurs dans une première direction et une seconde direction orthogonale l'une à l'autre soient respectivement de 15 mm et 5 mm, et les valeurs absolues du taux de variation dimensionnelle à la fois dans la première direction et la seconde direction après que les deux parties d'extrémité de l'échantillon dans la première direction ont été tirées avec une force de 49 mN/5 mm pendant 4 heures dans une atmosphère à 85 °C et à 85 % de HR étaient chacune au plus égales à 0,025 %.
PCT/JP2021/039828 2020-10-30 2021-10-28 Film stratifié et procédé de fabrication d'un capteur de contrainte WO2022092207A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122504A (ja) * 1989-10-05 1991-05-24 Asahi Chem Ind Co Ltd ストレインゲージ
JPH10270201A (ja) * 1997-03-21 1998-10-09 Res Inst Electric Magnetic Alloys Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ
JP2006147812A (ja) * 2004-10-18 2006-06-08 Ricoh Co Ltd 積層薄膜電気配線板
JP2014074661A (ja) * 2012-10-04 2014-04-24 Research Institute For Electromagnetic Materials 歪ゲージ
JP2015031633A (ja) * 2013-08-05 2015-02-16 公益財団法人電磁材料研究所 歪センサ
JP2019059170A (ja) * 2017-09-27 2019-04-18 日東電工株式会社 結晶化フィルム
JP2019066311A (ja) * 2017-09-29 2019-04-25 ミネベアミツミ株式会社 ひずみゲージ
JP2020129013A (ja) * 2020-06-05 2020-08-27 ミネベアミツミ株式会社 ひずみゲージ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03122504A (ja) * 1989-10-05 1991-05-24 Asahi Chem Ind Co Ltd ストレインゲージ
JPH10270201A (ja) * 1997-03-21 1998-10-09 Res Inst Electric Magnetic Alloys Ｃｒ−Ｎ基歪抵抗膜およびその製造法ならびに歪センサ
JP2006147812A (ja) * 2004-10-18 2006-06-08 Ricoh Co Ltd 積層薄膜電気配線板
JP2014074661A (ja) * 2012-10-04 2014-04-24 Research Institute For Electromagnetic Materials 歪ゲージ
JP2015031633A (ja) * 2013-08-05 2015-02-16 公益財団法人電磁材料研究所 歪センサ
JP2019059170A (ja) * 2017-09-27 2019-04-18 日東電工株式会社 結晶化フィルム
JP2019066311A (ja) * 2017-09-29 2019-04-25 ミネベアミツミ株式会社 ひずみゲージ
JP2020129013A (ja) * 2020-06-05 2020-08-27 ミネベアミツミ株式会社 ひずみゲージ

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