WO2022088269A1 - 一种石榴石结构的全光谱荧光转换材料及其制备方法 - Google Patents
一种石榴石结构的全光谱荧光转换材料及其制备方法 Download PDFInfo
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- conversion material
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- 239000000463 material Substances 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 35
- 238000001228 spectrum Methods 0.000 title claims abstract description 26
- 239000002223 garnet Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 35
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000000498 ball milling Methods 0.000 claims abstract description 16
- 238000001354 calcination Methods 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000007873 sieving Methods 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002270 dispersing agent Substances 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910020203 CeO Inorganic materials 0.000 claims description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 241000252203 Clupea harengus Species 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910001422 barium ion Inorganic materials 0.000 claims description 2
- 239000004359 castor oil Substances 0.000 claims description 2
- 235000019438 castor oil Nutrition 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 235000021323 fish oil Nutrition 0.000 claims description 2
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 2
- 235000019514 herring Nutrition 0.000 claims description 2
- 239000003921 oil Substances 0.000 claims description 2
- 235000019198 oils Nutrition 0.000 claims description 2
- 239000012856 weighed raw material Substances 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 4
- 238000000295 emission spectrum Methods 0.000 abstract 1
- 238000000695 excitation spectrum Methods 0.000 abstract 1
- 238000009776 industrial production Methods 0.000 abstract 1
- 238000005303 weighing Methods 0.000 abstract 1
- 235000002757 Erythrina edulis Nutrition 0.000 description 6
- 240000008187 Erythrina edulis Species 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 238000009877 rendering Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
Definitions
- the invention relates to the technical field of preparation of fluorescent conversion materials for LEDs, in particular to a full-spectrum fluorescent conversion material with a garnet structure and a preparation method thereof.
- white LED lighting devices need to continuously achieve breakthroughs in technical fields such as color rendering index and blue light utilization.
- color rendering index is far lower than that of the multi-chip three-primary LED white light source.
- the fundamental reason for this phenomenon is that the red light component is missing in the white light output spectrum of the excitation light source of a single blue LED chip.
- the Chinese patent proposes the modification technology of silicate system red phosphors to achieve high-quality white light output; the Chinese patent (application number 201610749624.2) prepares a full-spectrum phosphor that can meet the requirements of different lighting fields. High-efficiency white light for application needs. Although these fluorescent conversion materials achieve high-quality white light output, the white light LED devices prepared in this way cannot effectively utilize blue light.
- One of the objectives of the present invention is to overcome the deficiencies of the prior art and provide a full-spectrum fluorescence conversion material with a garnet structure for white LEDs with high blue light utilization, good chemical stability and temperature quenching properties, and wide excitation and emission ranges.
- the second object of the present invention is to provide a preparation method of the above-mentioned full-spectrum fluorescence conversion material of garnet structure.
- the preparation method is simple, easy to operate, low in equipment cost, and enterprises can realize large-scale production on the existing production line.
- the technical scheme adopted in the present invention is as follows: a full-spectrum fluorescence conversion material of garnet structure, the general chemical formula of which is Ba a Y b Luc Ced Al e Ga f Si g O 12 ,
- a is the mole percent of Ba ions
- b is the mole percent of Y 3+ ions
- c is the mole percent of Lu 3+ ions
- d is the mole percent of Ce 3+ ions
- e is the mole percent of Al 3+ ions Percentage
- f is the mole percentage of Ga 3+ ions
- the present invention also provides a method for preparing the full-spectrum fluorescence conversion material with the above-mentioned garnet structure.
- the specific steps are as follows:
- the raw material powder prepared in step (1) is based on the stoichiometry of each element in Y 3-d Ced Al 5 O 12 and Ba a Lu 3-ad C d Al 5-fg Ga f Sig O 12
- step (3) drying the ball-milled slurry in step (2), respectively, and grinding and sieving the dried powder;
- step (3) (4) calcining the mixed powder after sieving in step (3), the calcining temperature is 800-1100°C, and the holding time is 2-4h;
- Y 3-d C d Al 5 O 12 powder and Ba a Lu 3-ad C d Al 5-fg Ga f Sig O 12 powder calcined in step (4) according to the chemical formula Ba a Y b Luc Ced Al e Ga f Si g O 12 is proportioned and weighed, then placed in absolute ethanol, stirred in vacuum for 15-40 min, and the stirring speed is 1800-2500 r/min; dried after stirring;
- step (6) placing the dried powder in step (5) in a crucible, calcining in a reducing atmosphere, the calcination temperature is 1200-1500°C, and the holding time is 3-8h; after natural cooling to room temperature, the garnet structure is obtained
- the full spectrum fluorescence conversion material Ba a Y b Luc Ce d Al e Ga f Si g O 12 .
- the ball milling method described in step (2) is planetary ball milling, the ball milling speed is 120-150 r/min, and the ball milling time is 30-60 min.
- the dispersant described in step (2) is one or more of herring oil, fish oil, castor oil, polyetherimide, NP-10, and the amount of dispersant added is the quality of the raw material powder in the ball mill. 0.5-1.5wt.%.
- the mesh number of the sieved mesh is 80-200 mesh, and the sieve is sieved 3-5 times.
- the reducing atmosphere in step (6) is a mixture of nitrogen and hydrogen with a volume ratio of 95-85:5-15 or a mixture of argon and hydrogen with a volume ratio of 95-85:5-15.
- the present invention has the following beneficial effects:
- the preparation method of the present invention is simple, easy to operate, and has low equipment cost and no pollution.
- the garnet-structured full-spectrum fluorescence conversion material prepared by the present invention has high light conversion efficiency, good chemical stability, and wide excitation and emission spectral ranges.
- the maximum content of blue light can be realized. Absorption can effectively avoid the blue light hazard existing in the white light LED lighting device prepared by a single blue light chip.
- FIG. 1 is the XRD pattern of BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 prepared in Example 1.
- FIG. 1 is the XRD pattern of BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 prepared in Example 1.
- FIG. 2 is a photoluminescence spectrum diagram of the BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 fluorescence conversion material prepared in Example 1.
- FIG. 2 is a photoluminescence spectrum diagram of the BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 fluorescence conversion material prepared in Example 1.
- Example 3 is a photoluminescence spectrum diagram of the BaY 0.85 LuCe 0.15 Al 2 Ga 2 SiO 12 fluorescence conversion material prepared in Example 2.
- the raw materials used are all high-purity raw materials.
- step (2) The raw material powder prepared in step (1) is weighed according to the stoichiometric ratio of BaLu 1.97 Ce 0.03 Al 2 Ga 2 SiO 12 and Y 2.97 Ce 0.03 Al 5 O 12 , and placed in two oxidized In the aluminum ball mill tank, each ball mill tank was added with 1 wt.% of the raw material powder mass of the dispersant PEI, and anhydrous ethanol was used as a solvent to prepare the slurry respectively, and the planetary ball mill was carried out. The ball milling speed was 120r/min, and the ball milling time was 60min. .
- step (3) Drying the two slurries prepared in step (2) in a 55° C. oven, and grinding the dried powder through an 80-mesh sieve and sieving for 5 times.
- step (3) (4) calcining the mixed powder after sieving in step (3) respectively, the calcination temperature is 1100° C., and the holding time is 4h.
- step (6) Place the dried powder in step (5) in a crucible, and calcine in a reducing atmosphere (90% N 2 +10% H 2 ), the calcination temperature is 1200° C., and the holding time is 5h; At room temperature, a full-spectrum fluorescence conversion material BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 with a garnet structure is obtained.
- FIG. 1 is an XRD pattern of BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 prepared in this example, and it can be seen from the figure that the prepared material is a garnet phase without any impurity phase.
- FIG. 2 is a photoluminescence spectrum diagram of the BaYLu 0.97 Ce 0.03 Al 2 Ga 2 SiO 12 fluorescence conversion material prepared in the present embodiment. The results in the figure show that the fluorescence conversion material with a garnet structure can achieve full-spectrum luminescence.
- step (2) Weigh the raw material powder prepared in step (1) according to the stoichiometric ratio of BaLu 1.85 Ce 0.15 Al 2 Ga 2 SiO 12 and Y 2.85 Ce 0.15 Al 5 O 12 , and place them in two nylon ball mill jars respectively. 1 wt.% dispersant PEI was added, and slurries were prepared with absolute ethanol as a solvent, respectively, and subjected to planetary ball milling. The ball milling speed was 150 r/min and the ball milling time was 30 min.
- step (3) The slurry prepared in step (2) is placed in a 55° C. oven to dry, and the dried powder is ground and passed through a 100-mesh sieve and sieved three times.
- step (3) The mixed powders sieved in step (3) were calcined respectively, the calcination temperature was 900°C, and the holding time was 4h.
- step (6) Place the dried powder in step (5) in a crucible, and in a reducing atmosphere (95% N 2 +5% H 2 ), the calcination temperature is 1500°C, and the holding time is 5h; At room temperature, a full-spectrum fluorescence conversion material BaY 0.85 LuCe 0.15 Al 2 Ga 2 SiO 12 with a garnet structure is obtained.
- FIG. 3 is a photoluminescence spectrum diagram of the BaY 0.85 LuCe 0.15 Al 2 Ga 2 SiO 12 fluorescence conversion material prepared in the present embodiment. The results in the figure show that the fluorescence conversion material with a garnet structure can achieve full-spectrum luminescence.
- the raw material powders are respectively prepared according to the stoichiometric ratio of the YAG-based and LuAG-based fluorescent materials.
- the YAG-based and LuAG-based fluorescent conversion materials can be phase-formed at the same sintering temperature, and single-doped rare earth ions can be realized.
- Ce 3+ emits light in the full spectrum under the garnet crystal structure, and its photoconversion efficiency is much higher than that of a single host material.
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Abstract
一种石榴石结构的全光谱荧光转换材料及其制备方法,该荧光转换材料的化学通式是Ba aY bLu cCe dAl eGa fSi gO 12,0.85≤a≤1.15,0<b≤2.0,0.2≤c≤2.0,0.03≤d≤0.15,0.5≤e≤2.5,0.5≤f≤2.5,0.8≤g≤1.2,a+b+c+d=3,e+f+g=5;首先分别配制Y 3-dCe dAl 5O 12以及Ba aLu 3-a-dCe dAl 5-f-gGa fSi gO 12原料粉体,再分别球磨、干燥、过筛、煅烧,再将煅烧后的Y 3-dCe dAl 5O 12粉体以及Ba aLu 3-a-dCe dAl 5-f-gGa fSi gO 12粉体按照化学式Ba aY bLu cCe dAl eGa fSi gO 12进行配比称量,真空搅拌,干燥后置于还原气氛下煅烧,即得到目标产物。制备的全光谱荧光转换材料光转换效率高、化学稳定性好、激发和发射光谱范围宽,制备方法简单,易于工业化生产。
Description
本发明涉及LED用荧光转换材料制备技术领域,具体涉及一种石榴石结构的全光谱荧光转换材料及其制备方法。
自蓝光LED芯片问世以来,利用低成本的LED芯片实现高品质的白光照明输出成为众多科研学者不断追求的目标。当今世界,采用荧光转换材料实现高品质白光照明输出的白光LED器件以其制备成本低、能耗低、寿命长、环境友好等优势已经成为应用最为广泛的照明灯具。
但是,随着人们对高品质健康生活的不断追求以及对蓝光危害潜在风险的担忧,使得白光LED照明器件需要在显色指数、蓝光利用率等技术领域不断实现突破。然而,对于单一蓝光LED芯片的白光光源来说,其显色指数远远低于多芯片三基色LED白光照明光源。造成这种现象的根本原因在于,单一蓝光LED芯片的激发光源的白光输出光谱中,缺少红光成分。
为此,国内学者通过采用引入单一红光成分的方式来提升单一蓝光LED芯片照明器件的显色指数。中国专利(申请号201910313255.6)提出对硅酸盐体系红光荧光粉的改性技术实现高品质的白光输出;中国专利(申请号201610749624.2)制备了一种全光谱荧光粉获得了能够满足不同照明领域应用需求的高效白光。虽然,这些荧光转换材料实现了高品质的白光输出,但是通过该方式制备的白光LED器件无法对蓝光进行有效的利用。
因此,对于现有的荧光转换材料基质改进与开发,以得到能够与蓝光激发LED芯片相匹配的荧光粉对单一蓝光芯片的白光LED照明器件的发展具有重要的意义。
发明内容
本发明目的之一是克服现有技术的不足,提供一种蓝光利用率高、化学稳定性和温度猝灭特性好、激发和发射范围宽的白光LED用石榴石结构的全光谱荧光转换材料。
本发明目的之二是提供一种上述石榴石结构的全光谱荧光转换材料的制备 方法。该制备方法简单、易于操作、设备成本低并且企业能够在现有的产线上实现大规模生产。
为实现上述目的,本发明采用的技术方案如下:一种石榴石结构的全光谱荧光转换材料,其化学通式是Ba
aY
bLu
cCe
dAl
eGa
fSi
gO
12,
其中,a为Ba
2+离子的摩尔百分数,b为Y
3+离子的摩尔百分数,c为Lu
3+离子的摩尔百分数,d为Ce
3+离子的摩尔百分数,e为Al
3+离子的摩尔百分数,f为Ga
3+离子的摩尔百分数,g为Si
4+离子的摩尔百分数,分别满足0.85≤a≤1.15,0<b≤2.0,0.2≤c≤2.0,0.03≤d≤0.15,0.5≤e≤2.5,0.5≤f≤2.5,0.8≤g≤1.2,并且满足a+b+c+d=3,e+f+g=5。
本发明还提供上述石榴石结构的全光谱荧光转换材料的制备方法,具体步骤如下:
(1)按照化学式Ba
aY
bLu
cCe
dAl
eGa
fSi
gO
12选取SiO
2、Al
2O
3、CeO
2、Lu
2O
3、Ga
2O
3以及BaCO
3粉体作为原料粉体;
(2)将步骤(1)准备好的原料粉体按照Y
3-dCe
dAl
5O
12以及Ba
aLu
3-a-dCe
dAl
5-f-gGa
fSi
gO
12中各元素的化学计量比进行称量,其中0.85≤a≤1.15,0<b≤2.0,0.2≤c≤2.0,0.03≤d≤0.15,0.5≤e≤2.5,0.5≤f≤2.5,0.8≤g≤1.2,a+b+c+d=3,e+f+g=5,将称量好的原料粉体分别置于两个球磨罐中,然后分别加入分散剂,以无水乙醇作为溶剂配制浆料,进行球磨;
(3)将步骤(2)球磨后的浆料分别进行干燥,并将干燥后的粉体研磨过筛;
(4)将步骤(3)过筛后的混合粉体分别进行煅烧,煅烧温度为800-1100℃,保温时间为2-4h;
(5)将步骤(4)煅烧后的Y
3-dCe
dAl
5O
12粉体以及Ba
aLu
3-a-dCe
dAl
5-f-gGa
fSi
gO
12粉体按照化学式Ba
aY
bLu
cCe
dAl
eGa
fSi
gO
12进行配比称量,然后置于无水乙醇中,真空搅拌15-40min,搅拌转速为1800-2500r/min;搅拌结束后干燥;
(6)将步骤(5)干燥后的粉体置于坩埚中,在还原气氛下煅烧,煅烧温度为1200-1500℃,保温时间为3-8h;待自然冷却至室温,即得到石榴石结构的全光谱荧光转换材料Ba
aY
bLu
cCe
dAl
eGa
fSi
gO
12。
优选的,步骤(2)中所述的球磨方式为行星式球磨,球磨转速为120-150r/min,球磨时间为30-60min。
优选的,步骤(2)中所述分散剂为鲱鱼油、鱼油、蓖麻油、聚醚酰亚胺、NP-10中的一种或多种,分散剂添加量为球磨罐中原料粉体质量的0.5-1.5wt.%。
优选的,步骤(2)中所述过筛的筛网目数为80-200目,过筛3-5次。
优选的,步骤(6)所述的还原气氛是体积比为95-85:5-15的氮气和氢气混合体或者体积比为95-85:5-15的氩气和氢气混合体。
与现有技术相比,本发明具有如下有益效果:
(1)本发明制备方法简单、易于操作、设备成本低且无污染。
(2)本发明所制备的石榴石结构的全光谱荧光转换材料光转换效率高、化学稳定性好、激发和发射光谱范围宽,在与蓝光芯片组成的LED器件中,能够实现最大含量的蓝光吸收,能够有效避免单一蓝光芯片制备的白光LED照明器件存在的蓝光危害。
图1为实施例1制得的BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12的XRD图。
图2为实施例1制得的BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12荧光转换材料光致发光光谱图。
图3为实施例2制得的BaY
0.85LuCe
0.15Al
2Ga
2SiO
12荧光转换材料光致发光光谱图。
下面结合附图和具体实施例对本发明作进一步详细说明。以下实施例中,所用的原料均为高纯原料。
实施例1
一种石榴石结构全光谱BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12荧光转换材料的制备方法,具体步骤如下:
(1)按照化学式BaLu
1.97Ce
0.03Al
2Ga
2SiO
12以及Y
2.97Ce
0.03Al
5O
12涉及的原料种类进行准备,使用的原料分别为:SiO
2、Al
2O
3、CeO
2、Lu
2O
3、Ga
2O
3、Y
2O
3以及BaCO
3粉体。
(2)将步骤(1)准备好的原料粉体,按照BaLu
1.97Ce
0.03Al
2Ga
2SiO
12与Y
2.97Ce
0.03Al
5O
12中的化学计量比进行称量,分别置于两个氧化铝球磨罐中,每个球磨罐中加入原料粉体质量1wt.%的分散剂PEI,以无水乙醇作为溶剂分别配制 浆料,进行行星式球磨,球磨转速为120r/min,球磨时间为60min。
(3)将步骤(2)所制备的两种浆料置于55℃烘箱中干燥,并将干燥后的粉体研磨过80目筛,过筛5次。
(4)将步骤(3)过筛后的混合粉体分别煅烧,煅烧温度为1100℃,保温时间为4h。
(5)将步骤(4)煅烧后的BaLu
1.97Ce
0.03Al
2Ga
2SiO
12粉体与Y
2.97Ce
0.03Al
5O
12粉体按照化学式BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12进行配比称量,然后置于无水乙醇中,真空搅拌25min,搅拌转速为2000r/min;然后在55℃干燥。
(6)将步骤(5)所干燥后的粉体置于坩埚中,在还原气氛(90%N
2+10%H
2)下煅烧,煅烧温度为1200℃,保温时间为5h;待自然冷却到室温,即得到石榴石结构的全光谱荧光转换材料BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12。
图1为本实施例制得的BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12的XRD图,从图中可以看出所制备的材料为石榴石相,无任何的杂相。
图2为本实施例制得的BaYLu
0.97Ce
0.03Al
2Ga
2SiO
12荧光转换材料光致发光光谱图,图中结果表明根据所制备的石榴石结构的荧光转换材料能够实现全光谱的发光。
实施例2
一种石榴石结构全光谱BaY
0.85LuCe
0.15Al
2Ga
2SiO
12荧光转换材料的制备方法,具体步骤如下:
(1)按照化学式BaLu
1.85Ce
0.15Al
2Ga
2SiO
12与Y
2.85Ce
0.15Al
5O
12涉及的原料种类进行准备,使用的原料分别为:SiO
2、Al
2O
3、CeO
2、Y
2O
3、Ga
2O
3、Lu
2O
3以及BaCO
3粉体。
(2)将步骤(1)准备好的原料粉体,按照化学计量比BaLu
1.85Ce
0.15Al
2Ga
2SiO
12与Y
2.85Ce
0.15Al
5O
12进行称量,分别置于两个尼龙球磨罐中,加入粉体质量1wt.%的分散剂PEI,以无水乙醇作为溶剂分别配制浆料,进行行星式球磨,球磨转速为150r/min,球磨时间为30min。
(3)将步骤(2)所制备的浆料置于55℃烘箱干燥,并将干燥后的粉体研磨过100目筛,过筛3次。
(4)将步骤(3)过筛后的混合粉体分别煅烧,煅烧温度为900℃,保温时间为 4h。
(5)将步骤(4)煅烧后的BaLu
1.85Ce
0.15Al
2Ga
2SiO
12粉体与Y
2.85Ce
0.15Al
5O
12粉体按照化学式BaY
0.85LuCe
0.15Al
2Ga
2SiO
12进行配比称量,然后置于无水乙醇中,真空搅拌25min,搅拌转速为2000r/min;然后在55℃干燥。
(6)将步骤(5)所干燥后的粉体置于坩埚中,在还原气氛(95%N
2+5%H
2)下,煅烧温度为1500℃,保温时间为5h;待自然冷却到室温,即得到石榴石结构的全光谱荧光转换材料BaY
0.85LuCe
0.15Al
2Ga
2SiO
12。
图3为本实施例制得的BaY
0.85LuCe
0.15Al
2Ga
2SiO
12荧光转换材料光致发光光谱图,图中结果表明根据所制备的石榴石结构的荧光转换材料能够实现全光谱的发光。
将荧光粉和5W蓝光COB芯片封装在一起,经积分球测试(I=350mA,U=14V,型号:SIS-3_1.0m_R98,杭州远方光电信息股份有限公司,室温条件),光效结果如表1所示。
表1
类型 | 光效(lm/W) |
商用Ce:YAG荧光粉 | 297 |
商用Ce:LuAG荧光粉 | 319 |
BaYLu 0.97Ce 0.03Al 2Ga 2SiO 12 | 343 |
BaY 0.85LuCe 0.15Al 2Ga 2SiO 12 | 338 |
本发明按照YAG基与LuAG基的荧光材料的化学计量比分别配制原料粉体,通过本发明能够实现YAG基与LuAG基的荧光转换材料在同一烧结温度下成相,能够实现单掺杂稀土离子Ce
3+在石榴石晶体结构下全光谱发光,且其光转化效率远高于单一基质材料。
Claims (6)
- 一种石榴石结构的全光谱荧光转换材料,其特征在于,其化学通式是Ba aY bLu cCe dAl eGa fSi gO 12,其中,a为Ba 2+离子的摩尔百分数,b为Y 3+离子的摩尔百分数,c为Lu 3+离子的摩尔百分数,d为Ce 3+离子的摩尔百分数,e为Al 3+离子的摩尔百分数,f为Ga 3+离子的摩尔百分数,g为Si 4+离子的摩尔百分数,分别满足0.85≤a≤1.15,0<b≤2.0,0.2≤c≤2.0,0.03≤d≤0.15,0.5≤e≤2.5,0.5≤f≤2.5,0.8≤g≤1.2,并且满足a+b+c+d=3,e+f+g=5。
- 一种权利要求1所述的石榴石结构的全光谱荧光转换材料的制备方法,其特征在于,具体步骤如下:(1)按照化学式Ba aY bLu cCe dAl eGa fSi gO 12选取SiO 2、Al 2O 3、CeO 2、Lu 2O 3、Ga 2O 3以及BaCO 3粉体作为原料粉体;(2)将步骤(1)准备好的原料粉体按照Y 3-dCe dAl 5O 12以及Ba aLu 3-a-dCe dAl 5-f-gGa fSi gO 12中各元素的化学计量比进行称量,其中0.85≤a≤1.15,0<b≤2.0,0.2≤c≤2.0,0.03≤d≤0.15,0.5≤e≤2.5,0.5≤f≤2.5,0.8≤g≤1.2,a+b+c+d=3,e+f+g=5,将称量好的原料粉体分别置于两个球磨罐中,然后分别加入分散剂,以无水乙醇作为溶剂配制浆料,进行球磨;(3)将步骤(2)球磨后的浆料分别进行干燥,并将干燥后的粉体研磨过筛;(4)将步骤(3)过筛后的混合粉体分别进行煅烧,煅烧温度为800-1100℃,保温时间为2-4h;(5)将步骤(4)煅烧后的Y 3-dCe dAl 5O 12粉体以及Ba aLu 3-a-dCe dAl 5-f-gGa fSi gO 12粉体按照化学式Ba aY bLu cCe dAl eGa fSi gO 12进行配比称量,然后置于无水乙醇中,真空搅拌15-40min,搅拌转速为1800-2500r/min;搅拌结束后干燥;(6)将步骤(5)干燥后的粉体置于坩埚中,在还原气氛下煅烧,煅烧温度为1200-1500℃,保温时间为3-8h;待自然冷却至室温,即得到石榴石结构的全光谱荧光转换材料Ba aY bLu cCe dAl eGa fSi gO 12。
- 根据权利要求2所述的石榴石结构的全光谱荧光转换材料的制备方法,其特征在于,步骤(2)中所述的球磨方式为行星式球磨,球磨转速为120-150r/min,球磨时间为30-60min。
- 根据权利要求2所述的石榴石结构的全光谱荧光转换材料的制备方法, 其特征在于,步骤(2)中所述分散剂为鲱鱼油、鱼油、蓖麻油、聚醚酰亚胺、NP-10中的一种或多种,分散剂添加量为球磨罐中原料粉体质量的0.5-1.5wt.%。
- 根据权利要求2所述的石榴石结构的全光谱荧光转换材料的制备方法,其特征在于,步骤(2)中所述过筛的筛网目数为80-200目,过筛3-5次。
- 根据权利要求2所述的石榴石结构的全光谱荧光转换材料的制备方法,其特征在于,步骤(6)所述的还原气氛是体积比为95-85:5-15的氮气和氢气混合体或者体积比为95-85:5-15的氩气和氢气混合体。
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