WO2022074952A1 - 半導体試験装置および半導体試験方法 - Google Patents

半導体試験装置および半導体試験方法 Download PDF

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Publication number
WO2022074952A1
WO2022074952A1 PCT/JP2021/031177 JP2021031177W WO2022074952A1 WO 2022074952 A1 WO2022074952 A1 WO 2022074952A1 JP 2021031177 W JP2021031177 W JP 2021031177W WO 2022074952 A1 WO2022074952 A1 WO 2022074952A1
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Prior art keywords
constant current
electrode
semiconductor
current source
semiconductor element
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PCT/JP2021/031177
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English (en)
French (fr)
Japanese (ja)
Inventor
学 中西
幸一 高山
和起 上野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN202180066270.0A priority Critical patent/CN116325104A/zh
Priority to JP2022555295A priority patent/JP7479498B2/ja
Publication of WO2022074952A1 publication Critical patent/WO2022074952A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Definitions

  • This disclosure relates to semiconductor test equipment and semiconductor test methods.
  • the product performance of semiconductor devices is guaranteed by performing characteristic tests in the test process in the manufacturing process.
  • the characteristic test includes a characteristic test and screening such as applying a high voltage or a large current to the semiconductor device.
  • the characteristic test includes a test performed in the state of a module and a test performed in the state of a semiconductor element. It is preferable that the property test can be performed in the state of a wafer in order to reduce the manufacturing cost.
  • the reproducibility of the measurement results is low due to the difference in electrical resistance that changes depending on the contact between the test stage on which the wafer is installed and the back surface of the wafer, and the resistance of the path from the test stage to the measurement point. There's a problem.
  • Patent Document 1 discloses a configuration for reducing the contact resistance between the test stage and the back surface of the wafer as a test method for a semiconductor transistor.
  • the contact resistance between the test stage and the back electrode of the wafer can be reduced by setting the density of the suction holes provided in the test stage to 100 pieces / cm 2 or more. This can reduce the problem of poor measurement reproducibility.
  • test method described in Patent Document 1 cannot eliminate the influence of the difference in resistance of the path to the measurement point of the test stage, so that there is a problem that the measurement error varies within the plane of the wafer.
  • an object of the present disclosure is to provide a semiconductor test apparatus and a semiconductor test method capable of reducing variation in measurement error in the plane of a wafer in a test performed in a wafer state of a semiconductor element.
  • the semiconductor test apparatus of the present disclosure has a positive electrode on the back surface, a negative electrode and a control electrode on the front surface, and is a semiconductor test for testing the characteristics of a semiconductor element that is turned on or off according to a control signal input to the control electrode.
  • a test stage in which a wafer in which a plurality of semiconductor elements are arranged is fixed and has a role of a positive electrode electrically connected to a positive electrode of a plurality of semiconductor elements, and N (N is a natural number of 2 or more). ),
  • the semiconductor test apparatus of the present disclosure has a positive electrode on the back surface, a negative current on the front surface, and a control electrode, and is a semiconductor test for testing the characteristics of a semiconductor element that is turned on or off according to a control signal input to the control electrode.
  • a test stage, a constant current source, and a negative electrode of a semiconductor element which is a device that fixes a wafer on which a plurality of semiconductor elements are arranged and also serves as a positive electrode electrically connected to a positive electrode of a plurality of semiconductor elements.
  • a first probe that connects the negative electrode of the constant current source, and N electrodes (N is a natural number of 2 or more) that are arranged on the outer periphery of the test stage and are connected to the constant current source and function as current supply points.
  • N is a natural number of 2 or more
  • a variable resistance and a current meter arranged between the constant current source and each of the N electrodes, a collector sense terminal arranged on the outer periphery of the test stage, a collector sense terminal, and a negative electrode of the constant current source. It is equipped with a voltmeter that measures the current between.
  • the semiconductor test method of the present disclosure has a positive electrode on the back surface, a negative electrode on the front surface, and a control electrode, and is a semiconductor test for testing the characteristics of a semiconductor element that is turned on or off according to a control signal input to the control electrode.
  • This is a semiconductor test method using a device.
  • the semiconductor test device is arranged on the outer periphery of the test stage, N constant current sources (N is a natural number of 2 or more), and the outer periphery of the test stage, each of which is one of N constant current sources. It is provided with N electrodes connected to each other and functioning as N current supply points, a collector sense terminal arranged on the outer periphery of the test stage, a first probe, a second probe, and a voltmeter.
  • the semiconductor test method consists of fixing a wafer on which a plurality of semiconductor elements are arranged to a test stage and connecting the positive electrode of the plurality of semiconductor elements to the test stage, and using the first probe to obtain a negative electrode of the semiconductor element.
  • FIG. It is a figure which shows the structure of the semiconductor test apparatus of Embodiment 1.
  • FIG. It is a figure which simplified the path which concerns on the saturation voltage measurement of the semiconductor element 27 in Embodiment 1.
  • FIG. It is a figure which simplified the path which concerns on the saturation voltage measurement of the semiconductor element 26 in Embodiment 1.
  • FIG. It is a flowchart which shows the procedure of the saturation voltage test of the semiconductor element in Embodiment 1.
  • FIG. It is a figure which shows the example of the semiconductor test apparatus of Embodiment 2.
  • It is a figure which shows the structure of the semiconductor test apparatus of Embodiment 3.
  • It is a flowchart which shows the procedure of the saturation voltage test of the semiconductor element in Embodiment 3.
  • FIG. 1 is a diagram showing the configuration of the semiconductor test apparatus according to the first embodiment.
  • the semiconductor test apparatus includes a test stage 51, a first probe 53, a second probe 54, a drive circuit 55, a first constant current source 1, and a second constant. It includes a current source 2, a first electrode 31, a second electrode 32, a collector sense terminal 33, and a negative electrode 42 of a constant current source.
  • the test stage 51 fixes the wafer 63.
  • a plurality of semiconductor elements are arranged on the wafer 63. Any self-extinguishing semiconductor element can be used as the semiconductor element. All semiconductor devices arranged on the wafer 63, or a part of all semiconductor devices, are sampled and inspected.
  • the semiconductor element 27 and the semiconductor element 26 represent a plurality of arranged semiconductor elements.
  • the semiconductor elements 26 and 27 have a positive electrode on the back surface, a negative electrode on the front surface, and a control electrode.
  • the semiconductor elements 26 and 27 are turned on or off according to the first control signal input from the drive circuit 55 to the control electrode.
  • the positive electrode means a drain electrode
  • the negative electrode means a source electrode
  • the control electrode means a gate electrode.
  • the positive electrode means a collector electrode
  • the negative electrode means an emitter electrode
  • the control electrode means a gate electrode.
  • a negative electrode and a control electrode are arranged on the front surface of the semiconductor elements 26 and 27, and a positive electrode is arranged on the back surface.
  • FIG. 1 shows a state in which the first probe 53 and the second probe 54 are connected to the semiconductor element 27 when the subject is the semiconductor element 27.
  • the positive electrode (collector in the case of an IGBT) on the back surface of the semiconductor elements 26 and 27 is directly electrically connected to the test stage 51 (conductor) having the role of a positive electrode.
  • the first constant current source 1 and the second constant current source 2 supply a constant current.
  • the first electrode 31 is arranged on the outer periphery of the test stage 51.
  • the first electrode 31 is connected to the first constant current source 1.
  • the first electrode 31 functions as a first current supply point to the test stage 51.
  • the second electrode 32 is arranged on the outer periphery of the test stage 51.
  • the second electrode 32 is connected to the second constant current source 2.
  • the first electrode 31 and the second electrode 32 are electrically connected to the positive electrode on the back surface of the semiconductor elements 26 and 27.
  • the on-resistance (equivalent resistance) of the semiconductor element 27 in the saturation voltage test is indicated by the resistance 17
  • the on-resistance (equivalent resistance) of the semiconductor element 26 is indicated by the resistance 16.
  • the first probe 53 electrically connects the first constant current source 1 to the negative electrode 42 of the constant current source via the resistor 10, the first electrode 31, the resistor 13, and the semiconductor element 27.
  • the first probe 53 electrically connects the first constant current source 1 to the negative electrode 42 of the constant current source via a resistor 10, a first electrode 31, a resistor 12, and a semiconductor element 26.
  • the resistance 10 is the resistance of the electrical wiring between the first constant current source 1 and the first electrode 31.
  • the resistance 13 is the sum of the resistance component of the path of the current flowing through the test stage 51 when power is supplied from the first constant current source 1 to the semiconductor element 27 and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 27. Is.
  • the resistance component of the test stage 51 is uniform, a current flows through the shortest distance between the first electrode 31 and the semiconductor element 27. For example, if the test stage 51 is scratched, current may not flow in the shortest path. The same applies to the resistance component from the other electrodes to the semiconductor element.
  • the resistance 12 is the sum of the resistance component of the path of the current flowing through the test stage 51 when power is supplied from the first constant current source 1 to the semiconductor element 26 and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 26. Is.
  • the first probe 53 electrically connects the second constant current source 2 to the negative electrode 42 of the constant current source via the resistor 11, the second electrode 32, the resistor 14, and the semiconductor element 27.
  • the first probe 53 connects the second constant current source 2 to the negative electrode 42 of the constant current source via the resistor 11, the second electrode 32, the resistor 15, and the semiconductor element 26.
  • the resistance 11 is the resistance of the electrical wiring between the second constant current source 2 and the second electrode 32.
  • the resistance 14 is the sum of the resistance component of the path of the current flowing through the test stage 51 when power is supplied from the second constant current source 2 to the semiconductor element 27 and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 27. Is.
  • the resistance 15 is the sum of the resistance component of the path of the current flowing through the test stage 51 when power is supplied from the second constant current source 2 to the semiconductor element 26 and the contact resistance between the test stage 51 and the positive electrode on the back surface of the semiconductor element 26. Is.
  • the semiconductor element 27 and the negative electrode 42 of the constant current source are electrically connected. Be connected. Further, the semiconductor element 26 and the negative electrode 42 of the constant current source are electrically connected by being connected to the negative electrode (emitter in the case of the IGBT) on the surface of the semiconductor element 26 by the first probe 53.
  • the equivalent resistance when measuring the saturation voltage of the semiconductor element 27 is the resistance 17.
  • the equivalent resistance when the saturation voltage of the semiconductor element 26 is measured is the resistance 16.
  • the resistance 17 is 0.002 ⁇ .
  • the collector sense terminal 33 is arranged on the outer periphery of the test stage 51.
  • the collector sense terminal 33 is arranged closer to the first electrode 31 than to the second electrode 32.
  • the collector sense terminal 33 is electrically connected to the positive electrode on the back surface of the semiconductor elements 26 and 27.
  • the voltmeter 3 measures the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source.
  • the saturation voltage of the semiconductor element 27 can be measured at four terminals by the first constant current source 1, the second constant current source 2, and the voltmeter 3. Since only a minute current flows between the collector sense terminal 33 and the first electrode 31, and the electrical resistance is small at two points between the conductors, the collector sense terminal 33 and the first electrode 31 are regarded as equipotential. be able to.
  • the needle-shaped first probe 53 and the second probe 54 can be electrically contacted with any semiconductor element of the wafer 63.
  • the drive circuit 55 When measuring the saturation voltage of the semiconductor element 27, the drive circuit 55 turns on the semiconductor element 27 by applying a voltage to the control electrode of the semiconductor element 27 through the second probe 54.
  • the saturation voltage of the semiconductor element 27 can be measured by bringing the first probe 53 into contact with the negative electrode on the surface of the semiconductor element 27 and measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source. can.
  • the drive circuit 55 When measuring the saturation voltage of the semiconductor element 26, the drive circuit 55 turns on the semiconductor element 26 by applying a voltage to the control electrode of the semiconductor element 26 through the second probe 54.
  • the saturation voltage of the semiconductor element 26 can be measured by bringing the first probe 53 into contact with the negative electrode on the surface of the semiconductor element 26 and measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source. can.
  • the needle-shaped first probe 53 and the wiring have a resistance component, so that the voltmeter 3 has a resistance component.
  • the voltage near the tip of the needle of the first probe 53 and between the collector sense terminal 33 may be measured.
  • the first electrode 31 and the second electrode 32 are located at point-symmetrical positions from the center of the test stage 51. Assuming that the resistance of the test stage 51 is uniform, when the contact resistance between the positive electrode on the back surface of the semiconductor element and the test stage 51 is ignored, the magnitudes of the resistors 12, 13, 14, and 15 are from the electrode to the semiconductor. It is proportional to the distance to the element. If the first electrode 31 and the second electrode 32 are arranged in a point-symmetrical position from the center of the test stage 51, the semiconductor element 26 and the semiconductor element 27 are in a point-symmetrical position from the center of the test stage 51.
  • the value of the resistor 13 and the value of the resistor 15 are the same, and the value of the resistor 14 and the value of the resistor 12 are the same, so that the saturation voltage of the semiconductor element 26 and the saturation voltage of the semiconductor element 27 are the same. ..
  • the semiconductor test device such as the resistance 13.
  • FIG. 2 is a simplified diagram of the path related to the saturation voltage measurement of the semiconductor element 27 in the first embodiment.
  • FIG. 3 is a diagram simplifying the path related to the saturation voltage measurement of the semiconductor element 26 in the first embodiment.
  • Resistance 10 is 0.05 ⁇
  • resistance 11 is 0.10 ⁇
  • resistance 12 is 0.02 ⁇
  • resistance 13 is 0.01 ⁇
  • resistance 14 is 0.02 ⁇
  • resistance 15 is 0.01 ⁇
  • resistance 16 is 0.007 ⁇
  • resistance. 17 is 0.007 ⁇ .
  • the collector-emitter of the semiconductor element 27 when a constant voltage such as 15 V is applied to the gate of the semiconductor element 27 to turn on the semiconductor element 27 and a large current such as 300 A is passed through the collector of the semiconductor element 27.
  • the intercurrent voltage is the saturation voltage of the semiconductor device 27.
  • the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source is used. It is measured and used as the saturation voltage of the semiconductor element 27. This saturation voltage is a value including the voltage drop of the resistance 13.
  • the first constant current source 1 and the second constant current source 2 allow, for example, a constant flow of 150 A, which is half of the desired current (300 A in this case), to the first electrode 31. Therefore, the measurement error due to the resistance 13 can be halved. As a result, it is possible to reduce the variation in the measurement error of the saturation voltage of the semiconductor element in the wafer 63 surface due to the above current.
  • the saturation voltage of the semiconductor element 27 is 3.6 V.
  • the saturation voltage of the semiconductor element 26 is 5.1V.
  • the difference between the saturation voltage of the semiconductor element 26 and the saturation voltage of the semiconductor element 27 is improved by 6% as compared with the case where there is only one constant current source.
  • FIG. 4 is a flowchart showing the procedure of the saturation voltage test of the semiconductor element in the first embodiment.
  • step S02 the semiconductor test device and the semiconductor element of the subject are connected.
  • the emitter on the surface of the semiconductor device 27 is electrically connected to the negative electrode 42 of the constant current source by the needle-shaped first probe 53, and the semiconductor device 27 is connected.
  • the gate on the front surface is electrically connected to the drive circuit 55 of the semiconductor test device by the second probe 54 having a needle shape, and the collector on the back surface of the semiconductor element 27 is a test stage 51 (conductor) having a role of a positive electrode. Directly electrically connected.
  • step S03 the drive circuit 55 turns on the semiconductor element of the subject.
  • step S04 the supply of current from the semiconductor test apparatus is started. That is, the first constant current source 1 and the second constant current source 2 output currents of the same magnitude (150 A).
  • step S05 the voltmeter 3 measures the saturation voltage of the semiconductor element of the subject by measuring the voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source. If the measured saturation voltage is within the standard, the process proceeds to S06. If the measured saturation voltage is out of specification, the process proceeds to step S07.
  • step S06 the semiconductor element of the subject is determined to be acceptable.
  • step S07 it is determined that the semiconductor element of the subject is rejected. If it fails, for example, the semiconductor element of the subject may be marked with ink. Pass or fail may be recorded electronically.
  • step S08 the supply of current from the semiconductor test apparatus is stopped. That is, the output of the current from the first constant current source 1 and the second constant current source 2 is stopped.
  • the drive circuit 55 turns off the semiconductor element of the subject.
  • step S09 the connection between the semiconductor test apparatus and the semiconductor element of the subject is disconnected.
  • step S10 the test stage 51 moves to the measurement position of the next semiconductor element. The processing of steps S01 to S10 is repeated until all the semiconductor elements on the wafer 63 are measured. Alternatively, in the case of a sampling test, only the semiconductor element at a predetermined position is measured.
  • the semiconductor test apparatus and the semiconductor test method according to the first embodiment since the current flowing through the first electrode 31 is constant, it is used in a large current test such as a saturation voltage measurement of a semiconductor element. , It is possible to reduce the in-plane variation of the wafer 63 in the measurement error.
  • Embodiment 2 Although the true value of the saturation voltage of the semiconductor element 27 is equal to the voltage across the resistor 17, it is difficult to directly measure the potential between the collector electrode and the emitter electrode of the semiconductor element 27. The voltage between the collector sense terminal 33 and the negative electrode 42 of the constant current source is measured, and this is used as the saturation voltage of the semiconductor element 27.
  • the saturation voltage of the semiconductor element 27 deviates from the true value due to the resistance component of the path from the resistance 17 to the negative electrode 42 of the constant current source, but the only way to reduce the dissociation is to lower the resistance component.
  • the current flowing through the first electrode 31 is halved by setting the constant current source and the current supply points to two each. As a result, the voltage drop due to the resistance 13 can be reduced to 1/2.
  • the constant current source and the current supply points are each set to N.
  • N is a natural number of 3 or more.
  • the N electrodes are arranged on the outer circumference of the test stage 51 at uniform angle intervals. Each of the N electrodes connects to the corresponding one of the N constant current sources and functions as N current supply points.
  • FIG. 5 is a diagram showing an example of the semiconductor test apparatus of the second embodiment.
  • this semiconductor test apparatus includes a third constant current source 101, a fourth constant current source 102, a third electrode 131, and a fourth electrode 132. Further prepare.
  • the resistance 110 is the resistance of the electrical wiring between the third constant current source 101 and the third electrode 131.
  • the resistance 111 is the resistance of the electrical wiring between the fourth constant current source 102 and the fourth electrode 132.
  • the illustration of the resistance component in the test stage 51 is omitted.
  • the first electrode 31 is connected to the first constant current source 1.
  • the second electrode 32 is connected to the second constant current source 2.
  • the third electrode 131 is connected to the third constant current source 101.
  • the fourth electrode 132 is connected to the fourth constant current source 102.
  • the first electrode 31, the third electrode 131, the second electrode 32, and the fourth electrode 132 are arranged on the outer periphery of the test stage 51 at intervals of 90 °.
  • the current flowing through the first electrode 31 is 1 / N
  • the voltage drop due to the resistor 13 is reduced to 1 / N. Therefore, the deviation from the true value of the saturation voltage caused by the resistance 13 can be reduced to 1 / N. As a result, the measurement error due to the resistor 13 can be reduced to 1 / N.
  • FIG. 6 is a diagram showing the configuration of the semiconductor test apparatus according to the third embodiment.
  • the difference between the semiconductor test apparatus of the third embodiment and the semiconductor test apparatus of the first embodiment is that the semiconductor test apparatus of the third embodiment includes only one constant current source 1, and the first variable resistor 71.
  • a second variable resistor 72, a first ammeter 81, and a second ammeter 82 are provided.
  • the first variable resistor 71 and the first ammeter 81 connected in series are arranged between the constant current source 1 and the first electrode 31.
  • the second variable resistor 72 and the second ammeter 82 connected in series are arranged between the constant current source 1 and the second electrode 32.
  • the first ammeter 81 measures the current flowing through the first variable resistor 71.
  • the second ammeter 82 measures the current flowing through the second variable resistor 72.
  • an oscilloscope may be used to measure the transient voltage of the current transformer.
  • FIG. 7 is a flowchart showing the procedure of the saturation voltage test of the semiconductor element in the third embodiment.
  • the difference between the flowchart of the third embodiment and the flowchart of the second embodiment is that the flowchart of the third embodiment includes step S04a between steps S04 and S05.
  • step S04a the magnitude of the current flowing through the first variable resistor 71 is measured by the first ammeter 81.
  • the magnitude of the current flowing through the second variable resistance 72 is measured by the second ammeter 82.
  • the value of the first variable resistance 71 is equal to that of the first ammeter 81 and the second ammeter 82.
  • the resistance value and the resistance value of the second variable resistance 72 are adjusted. Thereby, the magnitude of the current flowing through the first electrode 31 can be made equal to the magnitude of the current flowing through the second electrode 32.
  • the magnitude of the resistance component between the semiconductor element of the subject and the first electrode 31 and the resistance component between the semiconductor element of the subject and the second electrode 32 are determined in advance. ..
  • an in-plane distribution of voltage drop in a wafer having a known resistance value of a semiconductor element such as a TEG (Test Element Group) wafer is created. Since the current value and the resistance value of the semiconductor element are known, the resistance component between the semiconductor element of the subject and the first electrode 31 and the resistance component between the semiconductor element of the subject and the second electrode 32 are known. Can be asked.
  • FIG. 8 is a diagram showing the configuration of the semiconductor test apparatus according to the fourth embodiment.
  • the semiconductor test apparatus of the fourth embodiment is different from the semiconductor test apparatus of the first embodiment in that the semiconductor test apparatus of the fourth embodiment includes a voltmeter 3a and an arithmetic unit 69 instead of the voltmeter 3. Is.
  • the voltmeter 3a measures the voltage Vce (sat) A between the collector sense terminal 33 and the negative electrode 42 of the constant current source. At the same time, the voltmeter 3a measures the voltage Vce (sat) B between the collector sense terminal 34 and the negative electrode 42 of the constant current source.
  • the collector sense terminal 34 and the second electrode 32 are equipotential.
  • the saturation voltage Vce (sat) of the semiconductor element can be obtained.
  • FIG. 9 is a simplified diagram of the path related to the saturation voltage measurement of the semiconductor element 27 in the fourth embodiment.
  • FIG. 10 is a diagram simplifying the path related to the saturation voltage measurement of the semiconductor element 26 in the fourth embodiment.
  • a method of calculating the measured value of the saturation voltage measurement which is a general large current test, will be described with reference to FIGS. 9 and 10. Since the calculation using variables is complicated, a real number is substituted for the resistance value here. That is, the resistance 10 is 0.05 ⁇ , the resistance 11 is 0.10 ⁇ , the resistance 12 is 0.02 ⁇ , the resistance 13 is 0.01 ⁇ , the resistance 14 is 0.02 ⁇ , the resistance 15 is 0.01 ⁇ , and the resistance 16 is 0.007 ⁇ . , The resistance 17 is 0.007 ⁇ . These are the same as the resistance values in FIGS. 2 and 3.
  • the resistance of the test stage 51 is uniform, and the contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is uniform.
  • the positional relationship between the semiconductor element 27 and the first electrode 31 and the positional relationship between the semiconductor element 26 and the second electrode 32 are point-symmetrical from the center point of the test stage 51.
  • the magnitude of the resistor 13 and the magnitude of the resistor 14 are the same.
  • the resistance component of the test stage 51 is not uniform, and the electrical contact resistance between the positive electrode on the back surface of the wafer 63 and the test stage 51 is not uniform. Therefore, the size of the resistance 13 and the size of the resistance 14 differ depending on the position of the semiconductor element on the wafer 63. In the present embodiment, the variation between the size of the resistance 13 and the size of the resistance 14 can be reduced by, for example, averaging the two measured values Vce (sat) A and Vce (sat) B.
  • the arithmetic unit 69 may change the method of obtaining the saturation voltage Vce (sat) of the semiconductor element from the measured values Vce (sat) A and Vce (sat) B according to the position of the semiconductor element.
  • a method of weighting based on the difference in the distance between the semiconductor element and the two electrodes may be used.
  • the arithmetic apparatus 69 may use the measured value Vce (sat) A as the saturation voltage Vce (sat) of the semiconductor element 27. ..
  • FIG. 11 is a flowchart showing the measurement procedure of the saturation voltage measurement of the fourth embodiment.
  • the difference between the flowchart of the fourth embodiment and the flowchart of the first embodiment is that the flowchart of the fourth embodiment includes step S04b between steps S04 and S05.
  • step S04b the voltmeter 3a measures the voltage Vce (sat) A between the collector sense terminal 33 and the negative electrode 42 of the constant current source.
  • the voltmeter 3a measures the voltage Vce (sat) B between the collector sense terminal 34 and the negative electrode 42 of the constant current source.
  • the arithmetic unit 69 can obtain the saturation voltage Vce (sat) of the semiconductor element of the subject by calculating (for example, averaging) these measured values.
  • the current flowing through the first electrode 31 and the second electrode 32 is constant, and the measured values at two points are calculated.
  • the saturation voltage it is possible to reduce the variation in the in-plane measurement error of the wafer 63 in the large current test.
  • Embodiment 5 Although the true value of the saturation voltage of the semiconductor element 27 is equal to the voltage across the resistor 17, it is difficult to directly measure the potential between the collector electrode and the emitter electrode of the semiconductor element 27.
  • the saturation voltage of the semiconductor element 27 deviates from the true value due to the resistance component of the path from the resistance 17 to the negative electrode 42 of the constant current source, but the only way to reduce the dissociation is to lower the resistance component.
  • the current flowing through the first electrode 31 is halved by setting two constant current sources and two current supply points. As a result, the voltage drop due to the resistance 13 can be reduced to 1/2.
  • the constant current source, the current supply point, and the collector sense terminal are each set to N pieces.
  • N is a natural number of 3 or more.
  • the N electrodes are arranged on the outer circumference of the test stage 51 at uniform angle intervals. Each of the N electrodes connects to the corresponding one of the N constant current sources and functions as N current supply points. Each of the N collector sense terminals is arranged so that the distance from the corresponding electrode among the N electrodes is closer than the distance from all the other electrodes of the N electrodes.
  • FIG. 12 is a diagram showing an example of the semiconductor test apparatus of the fifth embodiment.
  • this semiconductor test apparatus includes a third constant current source 101, a fourth constant current source 102, a third electrode 131, and a fourth electrode 132.
  • a collector sense terminal 133 and a collector sense terminal 134 are further provided.
  • the resistance 110 is the resistance of the electrical wiring between the third constant current source 101 and the third electrode 131.
  • the resistance 111 is the resistance of the electrical wiring between the fourth constant current source 102 and the fourth electrode 132.
  • the illustration of the resistance component in the test stage 51 is omitted.
  • the first electrode 31 is connected to the first constant current source 1.
  • the second electrode 32 is connected to the second constant current source 2.
  • the third electrode 131 is connected to the third constant current source 101.
  • the fourth electrode 132 is connected to the fourth constant current source 102.
  • the first electrode 31, the third electrode 131, the second electrode 32, and the fourth electrode 132 are arranged on the outer periphery of the test stage 51 at intervals of 90 °.
  • the collector sense terminal 33 is arranged at a position where the distance from the electrode 31 is closer than the distance from the electrodes 32, 131, 132.
  • the collector sense terminal 133 is arranged at a position where the distance from the electrode 131 is closer than the distance from the electrodes 31, 32, 132.
  • the collector sense terminal 34 is arranged at a position where the distance from the electrode 32 is closer than the distance from the electrodes 31, 131, 132.
  • the collector sense terminal 134 is arranged at a position where the distance from the electrode 132 is closer than the distance from the electrodes 31, 32, 131.
  • the current flowing through the first electrode 31 becomes 1 / N, so that the voltage drop of the resistor 13 is reduced to 1 / N. Therefore, the deviation from the true value of the saturation voltage caused by the resistance 13 can be reduced to 1 / N.
  • FIG. 13 is a diagram showing the configuration of the semiconductor test apparatus according to the sixth embodiment.
  • the semiconductor test apparatus of the sixth embodiment is different from the semiconductor test apparatus of the first embodiment in that the semiconductor test apparatus of the sixth embodiment has the first electrode 31 and the second electrode 32 of the test stage 51. The point is that the outer circumference can be moved arbitrarily.
  • the first electrode 31 and the second electrode 32 are arranged at positions equidistant from the semiconductor element 27 at an angle of 91.
  • the angle 91 is, for example, 30 degrees.
  • the mechanism by which the first electrode 31 and the second electrode 32 can be arbitrarily operated is, for example, a structure in which the upper surface of the test stage 51 is electrically contacted by a movable probe.
  • the difference between the size of the resistor 13 and the size of the resistance 14 can be reduced, so that the deviation from the true value of the saturation voltage can be reduced without adding a voltage measuring point. That is, it is possible to reduce the variation in the measurement error in the plane of the wafer 63.
  • FIG. 14 is a flowchart showing the procedure of the saturation voltage test of the semiconductor element in the sixth embodiment.
  • the difference between the flowchart of the sixth embodiment and the flowchart of the first embodiment is that the flowchart of the sixth embodiment includes step S01a before step S02.
  • step S01a the first electrode 31 and the second electrode 32 move to positions equidistant at an angle of 91 with the semiconductor element of the subject as the apex.
  • FIG. 15 is a diagram showing the configuration of the semiconductor test apparatus according to the seventh embodiment.
  • the difference between the semiconductor test apparatus of the seventh embodiment and the semiconductor test apparatus of the first embodiment is that in the seventh embodiment, the energized current of the constant current source 1 and the energized current of the constant current source 2 are different. That is.
  • the output current of the constant current source connected to the electrode closest to the collector sense terminal 33 among the N electrodes is the output current of the other constant current source among the N constant current sources. Make it smaller than.
  • the constant current source 1 connected to the electrode 31 closest to the collector sense terminal 33 is 10 A.
  • a current is output, and the constant current source 2 outputs a current of 290 A.
  • the ratio of the output current of the constant current source 1 to the output current of the constant current source 2 is not limited to this. Since the voltage drop of the resistor 13 becomes an error of the saturation voltage, it is better that the current flowing through the resistor 13 is as small as possible.
  • the error can be reduced in the seventh embodiment as compared with the first embodiment.
  • FIG. 16 is a flowchart showing the procedure of the saturation voltage test of the semiconductor element in the seventh embodiment.
  • the difference between the flowchart of the seventh embodiment and the flowchart of the first embodiment is that the flowchart of the seventh embodiment includes step S04a instead of step S04.
  • step S04a the supply of current from the semiconductor test apparatus is started. That is, the output current of the first constant current source 1 is made smaller than the output current of the second constant current source 2.
  • the first constant current source 1 outputs a current of 10 A
  • the second constant current source 2 outputs a current of 290 A.
  • each embodiment can be combined, and each embodiment can be appropriately modified or omitted.
  • 1,2,101,102 constant current source 3,3a voltmeter, 10,11,12,13,14,15,16,17,110,111 resistor, 26,27 semiconductor element, 31,32,131, 132 electrodes, 33, 34, 133, 134 collector sense terminals, 42 negative electrodes, 51 test stages, 53, 54 probes, 55 drive circuits, 63 wafers, 69 arithmetic devices, 71, 72 variable resistors, 81, 82 ammeters.

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JP2006071467A (ja) * 2004-09-02 2006-03-16 Toyota Industries Corp 半導体チップの電気特性測定方法及び装置
JP2011138865A (ja) * 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置
JP2012151323A (ja) * 2011-01-20 2012-08-09 Toshiba Corp 半導体装置およびその製造方法
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JPH0233437U (https=) * 1988-08-26 1990-03-02
JP2006071467A (ja) * 2004-09-02 2006-03-16 Toyota Industries Corp 半導体チップの電気特性測定方法及び装置
JP2011138865A (ja) * 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置
JP2012151323A (ja) * 2011-01-20 2012-08-09 Toshiba Corp 半導体装置およびその製造方法
JP2014036105A (ja) * 2012-08-08 2014-02-24 Mitsubishi Electric Corp 半導体装置の測定方法、測定器
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