WO2022038875A1 - 高分子フィルム積層体の製造方法、高分子フィルム積層体および高分子フィルム積層体を備えるデバイス - Google Patents

高分子フィルム積層体の製造方法、高分子フィルム積層体および高分子フィルム積層体を備えるデバイス Download PDF

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Publication number
WO2022038875A1
WO2022038875A1 PCT/JP2021/022431 JP2021022431W WO2022038875A1 WO 2022038875 A1 WO2022038875 A1 WO 2022038875A1 JP 2021022431 W JP2021022431 W JP 2021022431W WO 2022038875 A1 WO2022038875 A1 WO 2022038875A1
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Prior art keywords
polymer film
inorganic material
material layer
film laminate
laminate according
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Ceased
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PCT/JP2021/022431
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English (en)
French (fr)
Japanese (ja)
Inventor
好家 松本
幸司 宮本
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Nagase and Co Ltd
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Nagase and Co Ltd
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Priority to JP2022543294A priority Critical patent/JPWO2022038875A1/ja
Publication of WO2022038875A1 publication Critical patent/WO2022038875A1/ja
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate

Definitions

  • the present invention relates to a method for manufacturing a polymer film laminate, a polymer film laminate, and a device including the polymer film laminate.
  • FCCL flexible copper-clad laminate
  • a sputtering method which is a dry method, is used as one of the metallizing methods for the PI surface.
  • a seed layer of Ni / Cr alloy and Cu is formed on the surface of PI by sputtering, and a conductor layer is formed on the seed layer by electrolytic Cu plating.
  • This FCCL is advantageous for forming a fine circuit because the PI and the conductor layer can be easily thinned.
  • the formation of a seed layer by sputtering is very expensive and the price of FCCL is also high, which limits its use.
  • the current FPC uses inexpensive laminated type or cast type FCCL, the interface between the PI and the conductor layer is not smooth, and it is difficult to thin the copper foil, so it is difficult to form a fine pattern circuit, and copper. Since the foil is thick, it is difficult to make the FPC thinner.
  • FCCL is formed by these laminating methods or casting methods, roughening is required in order to obtain adhesion with the copper foil.
  • Patent Document 1 a technique using an organic adhesive has been developed for joining and laminating polymer films at a low temperature.
  • an organic adhesive in a special environment such as a vacuum, the organic solvent evaporates from the adhesive layer of the final product and escapes with the passage of time, so that the mechanical strength of the joint is strong. May occur.
  • defects such as bubbles may occur and the yield is lowered, which is a factor of increasing the final cost.
  • the present invention is a method for producing a polymer film laminate that can be carried out at low cost and can be used in a high-frequency circuit that firmly bonds a polymer film to another polymer film at a low temperature. It is an object of the present invention to provide a polymer film laminate and a device including the polymer film laminate.
  • the method for producing the polymer film laminate is to form an inorganic material layer on a part or all of either one or both of the first polymer film and the second polymer film.
  • the first polymer film and the second polymer film are brought into contact with each other, and the first polymer film and the second polymer film are bonded to each other via the inorganic material layer.
  • the first polymer film and the second polymer film form an inorganic material layer in a part or all of one or both of them, and the inorganic material layer is interposed through the inorganic material layer.
  • the polymer film can be bonded firmly at low temperature and at low cost without using an organic adhesive.
  • both sides of either the first polymer film and the second polymer film, or the first polymer film and the second polymer The inorganic material layer is formed on both sides of the film. According to such a configuration, since the inorganic material layers are formed on both sides of the polymer film, it is possible to manufacture a polymer film laminate having excellent moisture resistance.
  • the inorganic material layer is formed by an ion beam sputtering method targeting metal or Si. According to such a configuration, it is possible to form an inorganic material layer having a strong adhesive force with respect to the polymer film.
  • the formation of the inorganic material layer by the ion beam sputtering method comprises irradiating the target with energy particles of a mixed gas composed of an inert gas and an oxygen gas.
  • a mixed gas composed of an inert gas and an oxygen gas.
  • the inorganic material layer is formed by an ALD method or a magnetron sputtering method. According to such a configuration, a method for forming an inorganic material layer having a strong adhesive force with respect to a polymer film can be selected depending on the situation.
  • the inorganic material layer is formed from a plurality of layers, and each layer is formed by any one of an ion beam sputtering method, an ALD method, and a magnetron sputtering method. According to such a configuration, since the inorganic material layer is formed by a plurality of layers, the optimum composition of the inorganic material layer can be selected depending on the type of the polymer film to be bonded.
  • the first layer is formed by the ALD method
  • the second layer formed on the first layer is an ion beam sputtering method. Is formed by.
  • the inorganic material layer is suitable because the first layer is formed by the ALD method and the second layer formed on the first layer is formed by the ion beam sputtering method.
  • a method for forming an inorganic material layer can be carried out.
  • the inorganic material layer contains any one of Al, Ti, Ni, and Si as a main component. With such a configuration, an appropriate material can be selected as the inorganic material layer.
  • One aspect of the present invention includes colliding particles having a predetermined kinetic energy with the surface to be formed of the inorganic material layer before forming the inorganic material layer. According to such a configuration, since the particles having a predetermined kinetic energy are made to collide with the surface to be formed of the inorganic material layer, the surface activation treatment can be carried out before forming the inorganic material layer.
  • particles having a predetermined kinetic energy are made to collide with either or both of the planned joining surfaces. Including that. According to such a configuration, since the particles having a predetermined kinetic energy collide with either one or both of the planned bonding surfaces, the planned bonding surfaces can be activated and the polymer films can be firmly bonded to each other. ..
  • forming the inorganic material layer and joining the first polymer film and the second polymer film are performed in a vacuum. According to such a configuration, by performing these steps in a vacuum, it is possible to avoid adhesion, adsorption of unnecessary substances to the inorganic material layer forming surface and the bonding surface, or oxidation and hydroxylation of the bonding surface, and to prevent the polymer film. It is possible to firmly join each other.
  • One aspect of the present invention includes joining the first polymer film and the second polymer film and then performing a heat treatment. According to such a configuration, since the heat treatment is performed after the bonding, the bonding strength can be improved.
  • the heat treatment is performed at 350 ° C. or lower. According to such a configuration, an appropriate temperature can be selected for the heat treatment.
  • the first polymer film and the second polymer film are LCP (liquid crystal polymer), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), PTFE (polytetra).
  • PPS polyphenylene sulfide
  • PI-based including PI (polyethylene), MPI (modified polyimide)
  • PPE-based including PPE (polyphenylene ether), mPPE (modified polyphenylene ether)
  • cycloolefin polymer Scroolefin copolymer, polystyrene, syndiotactic polystyrene, polyethylene naphthalate, polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, vinyl chloride resin, polystyrene, acrylic, polycarbonate, polyether ether ketone, polyether sulfone, aramid, One or a combination of ethylene / ethylene tetrafluoride copolymer resin, ethylene tetrafluoride / fluorinated propylene copolymer resin, polyarylate, polyetherimide, polyamideimide, thermoplastic poly
  • Another aspect of the present invention provides a device comprising a polymer film laminate manufactured by the manufacturing method described above. According to such an invention, the present invention can be appropriately utilized.
  • the polymer film laminate of the present invention is partially or wholly formed between the first polymer film, the second polymer film, and the first polymer film and the second polymer film. It has an inorganic material layer that is arranged and joins the first polymer film and the second polymer film. According to such an invention, it is possible to provide a polymer film laminate in which a polymer film is firmly bonded at a low temperature and at a low cost.
  • both sides of either the first polymer film and the second polymer film, or the first polymer film and the second polymer is formed on both sides of the film. According to such a configuration, it is possible to provide a polymer film laminate which is excellent in moisture resistance and can be used for a high frequency circuit, including various modifications.
  • the inorganic material layer is formed on both surfaces of at least one polymer film, and the at least one inorganic material layer is used for bonding to a copper foil or the other polymer film. According to such a configuration, it is possible to provide a polymer film laminate having excellent moisture resistance and being usable in a high frequency circuit.
  • the inorganic material layer contains metal or Si. According to such a configuration, it is possible to provide a polymer film laminate having high bonding strength.
  • the inorganic material layer is formed of a plurality of layers. According to such a configuration, since the inorganic material layer is formed by a plurality of layers, the optimum composition of the inorganic material layer can be selected depending on the type of the polymer film to be bonded.
  • the inorganic material layer contains any one of Al, Ti, Ni, and Si as a main component. With such a configuration, an appropriate material can be selected as the inorganic material layer.
  • the first polymer film and the second polymer film are LCP (liquid crystal polymer), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), PTFE (polytetra).
  • PPS polyphenylene sulfide
  • PI-based including PI (polyethylene), MPI (modified polyimide)
  • PPE-based including PPE (polyphenylene ether), mPPE (modified polyphenylene ether)
  • cycloolefin polymer Scroolefin copolymer, polystyrene, syndiotactic polystyrene, polyethylene naphthalate, polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyamide, vinyl chloride resin, polystyrene, acrylic, polycarbonate, polyether ether ketone, polyether sulfone, aramid, One or a combination of ethylene / ethylene tetrafluoride copolymer resin, ethylene tetrafluoride / fluorinated propylene copolymer resin, polyarylate, polyetherimide, polyamideimide, thermoplastic poly
  • the gas permeability is 1E-03cc / m 2 ⁇ day to 1E-01cc / m 2 ⁇ day
  • the conductivity is 1E + 13 ⁇ ⁇ cm to 1E + 18 ⁇ ⁇ cm
  • the dielectric constant is 2.0 to 3. 5.
  • a method for producing a polymer film laminate which can be carried out at low cost and can be used in a high-frequency circuit for firmly bonding a polymer film to another polymer film at a low temperature, a polymer film laminate and A device including a polymer film laminate can be provided.
  • FIG. 1 shows a polymer film laminate according to the first embodiment of the present invention.
  • the polymer film laminate 1 according to the present embodiment has a first polymer film 2 and a second polymer film 3.
  • inorganic material layers 4 are formed on both sides thereof, and the first polymer film 2 and the second polymer film 3 are bonded to each other.
  • FIG. 9 is a schematic diagram showing an outline of a sputtering apparatus for forming an inorganic material layer in this step.
  • the sputtering apparatus 100 includes a particle beam source 6 and a sputtering target 5 in a chamber 8 that forms a space isolated from the atmosphere.
  • the particle beam source 6 is rotatably supported by a rotation shaft 6a, and is configured so that the particle beam B can scan the entire surface of the sputtering target 5.
  • the first polymer film 2 is placed vertically in the chamber 8.
  • the particle beam B is irradiated to the sputtering target 5 from the particle beam source 6
  • atoms or clusters M of an inorganic material are generated from the sputtering target 5.
  • the generated atoms or clusters M of the inorganic material are irradiated on both surfaces of the first polymer film 2, and the inorganic material layer 4 is formed on both surfaces of the polymer film 2 (FIGS. 2 and 3).
  • the inorganic material layer 4 is formed by the ion beam sputtering method using metal or Si as the sputtering target 5.
  • the method is not limited to this, and the method for forming the inorganic material layer 4 may be appropriately selected depending on the desired characteristics of the polymer film laminate 1, such as the ALD method, the magnetron sputtering method, and the CVD method.
  • the sputtering target 5 one containing any one of aluminum (Al), titanium (Ti), nickel (Ni), and silicon (Si) as a main component may be adopted.
  • transition metals such as tantalum (Ta), chromium (Cr), gold (Au) and platinum (Pt), solder alloys containing tin (Sn) and silver (Ag), copper (Cu), iron (Fe) and the like. May be adopted.
  • the particle beam B is irradiated with energy particles of a mixed gas composed of an inert gas and an oxygen gas, but other configurations include rare gas such as argon (Ar) and xenone (Xe), nitrogen, and the like. Oxygen or a mixed gas thereof can also be adopted.
  • the joining device 110 includes a bonding device 7 arranged above the chamber 8, a particle beam source 6, and a sputtering target 5 in a chamber 81 that forms a space isolated from the atmosphere.
  • the particle beam source 6 is rotatably supported by the rotation shaft 6a, and the particle beam B emitted from the particle beam source 6 is held by the bonding device 7 with the first polymer film 2 and the second polymer. It is configured so that the surface of the film 3 can be scanned. Further, as shown in FIG. 11, the particle beam source 6 is configured so that the particle beam B can scan the surface of the sputtering target 5.
  • the atoms or clusters M of the inorganic material generated by the particle beam B scanning the sputter target 5 are irradiated on the surfaces of the first polymer film 2 and the second polymer film 3 held by the bonding device 7. It is configured to be.
  • FIG. 4 is a schematic diagram for explaining the joining process of the present embodiment including an enlarged view of the bonding device 7.
  • the laminating device 7 arranged on the upper part of the joining device 110 includes a holding plate 7b extending to the left and right from the rotating shaft 7a rotatably supported via the rotating shaft 7a.
  • On the lower surface of the left and right holding plates 7b the first polymer film 2 and the second polymer film 3 in which the inorganic material layers 4 are formed on both sides in the above-mentioned inorganic material layer forming step are held. There is.
  • the particle beam B irradiates the surface of the inorganic material layer 4 formed under the first polymer film 2, and the particles having a predetermined kinetic energy are the inorganic material layer 4. It collides with the surface of the surface and the surface of the planned joining surface is activated.
  • the left and right holding plates 7b of the laminating device 7 are folded downward together with the first polymer film 2 and the second polymer film 3 with the rotation shaft 7a as the center of rotation.
  • the first polymer film 2 and the second polymer film 3 having the inorganic material layers 4 formed on both sides are bonded.
  • heating is performed by an electric heater (not shown) embedded in the holding plate 7b. The heating is preferably performed at 350 ° C. or lower.
  • the polymer film laminate 1 is taken out, and the manufacturing process of the polymer film laminate 1 shown in FIG. 1 is completed.
  • the first polymer film 2 and the second polymer film 3 adopted are LCP (liquid crystal polymer), PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer), and polyimide (PTFE).
  • LCP liquid crystal polymer
  • PFA tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer
  • PTFE polyimide
  • Polytetrafluoroethylene Polytetrafluoroethylene
  • PPS polyphenylene sulfide
  • PI-based including PI (polyimide) and MPI (modified polyimide)
  • PPE-based including PPE (polyphenylene ether), mPPE (modified polyphenylene ether)
  • cycloolefin Polymers scroolefin copolymers, polystyrenes, syndiotactic polystyrenes, polyethylene naphthalates, polyethylenes, polypropylenes, polyethylene terephthalates, polyethylene naphthalates, polyamides, vinyl chloride resins, polystyrenes, acrylics, polycarbonates, polyether ether ketones, polyether sulfone, Aramid, ethylene / ethylene tetrafluoride copolymer resin, ethylene / fluorinated propylene copolymer resin, polyarylate, polyetherimide, polyamide
  • the steps from the formation of the inorganic material layer 4 to the joining are performed in a vacuum.
  • the degree of vacuum before the start of the process reaches a pressure of 1 ⁇ 10 -5 Pa (Pascal) or less.
  • the present invention is not limited to this, and the process may be carried out in an inert gas or at atmospheric pressure while ensuring a clean environment.
  • LCP liquid crystal polymer
  • PFA tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer
  • polyimide is used as the first polymer film 2 and the second polymer film 3.
  • the inorganic material layer 4 Since these are bonded via the inorganic material layer 4, a method for producing a polymer film laminate and a polymer film laminate that can be used in a high-frequency circuit for firmly bonding a polymer film to another polymer film at a low temperature can be obtained. It can be provided at low cost. Further, since the inorganic material layers 4 are formed on both surfaces of the first polymer film 2, it is possible to provide the polymer film laminate 1 having excellent moisture resistance.
  • the inorganic material layer 4 is formed on both surfaces of the first polymer film 2, but the surface activity of causing particles having a predetermined kinetic energy to collide with the surface to be formed of the inorganic material layer before the formation.
  • the conversion process may be performed.
  • the inorganic material layer 4 may be formed from a plurality of layers. Any one of an ion beam sputtering method, an ALD method, and a magnetron sputtering method may be adopted for forming each of the plurality of layers of the inorganic material. Further, the inorganic material layer 4 is formed on the entire surface of the polymer film 2, but is not limited to this, and the inorganic material layer 4 may be formed on a part of the surface of the polymer film 2.
  • FIG. 6 shows the polymer film laminate 10 according to the second embodiment of the present invention.
  • This embodiment differs from the first embodiment in the configuration of the polymer film laminate 10.
  • the inorganic material layers 4 are also formed on both sides of the second polymer film 3.
  • the step of forming the inorganic material layers 4 on both sides of the second polymer film 3 is the same as the step of forming the inorganic material layers 4 on both sides of the first polymer film 2 in the first embodiment. Since other configurations and operations are the same as those of the first embodiment, the description thereof will be omitted here.
  • the inorganic material layers 4 are formed on both sides of the second polymer film 3, so that the moisture resistance characteristics are further improved. Further, the material for the FPC configuration can be bonded to the inorganic material layer 4 which is not used for bonding the second polymer film 3, and both sides of the polymer film laminate 10 can be used. Become.
  • FIG. 7 shows the polymer film laminate 20 according to the third embodiment of the present invention.
  • This embodiment differs from the first embodiment in the configuration of the polymer film laminate 20.
  • the inorganic material layer 4 is formed on one side of the first polymer film 2.
  • the sputtering apparatus 100 shown in FIG. 9 in the first embodiment, and in the sputtering step of the joining apparatus shown in FIG. 11, the inorganic material layer 4 is provided on one side of the first polymer film 2.
  • the surface activation treatment shown in FIG. 10 is performed on the planned formation surface of the inorganic material layer 4 of the first polymer film 2. Since other configurations and operations are the same as those of the first embodiment, the description thereof will be omitted here.
  • the process can be simplified and the cost can be reduced as compared with the first embodiment.
  • FIG. 8 shows the polymer film laminate 30 according to the fourth embodiment of the present invention.
  • This embodiment differs from the first embodiment in the configuration of the polymer film laminate 30.
  • the inorganic material layers 4a and 4b formed on both sides of the first polymer film 2 are composed of two layers, a first inorganic material layer 4a and a second inorganic material layer 4b.
  • the first inorganic material layer 4a is formed by the ALD method
  • the second inorganic material layer 4b is formed by the ion beam sputtering method. Since other configurations and operations are the same as those of the first embodiment, the description thereof will be omitted here.
  • the inorganic material layers 4a and 4b formed on both sides of the first polymer film 2 are the first inorganic material layer 4a and the second inorganic material. Since it is composed of two layers, the layer 4b, the bonding strength and the moisture resistance are further improved.

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PCT/JP2021/022431 2020-08-20 2021-06-14 高分子フィルム積層体の製造方法、高分子フィルム積層体および高分子フィルム積層体を備えるデバイス Ceased WO2022038875A1 (ja)

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JP2020-139039 2020-08-20

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008137367A (ja) * 2006-11-08 2008-06-19 Hitachi Chem Co Ltd 金属張積層板、並びに印刷回路板及びその製造方法
JP2008201117A (ja) * 2007-01-24 2008-09-04 Hitachi Chem Co Ltd 樹脂付き金属薄膜、印刷回路板及びその製造方法、並びに、多層配線板及びその製造方法
JP2009073943A (ja) * 2007-09-20 2009-04-09 Seiko Epson Corp 接合方法および接合体
WO2013154107A1 (ja) * 2012-04-10 2013-10-17 ランテクニカルサービス株式会社 高分子フィルムと高分子フィルムとを接合する方法、高分子フィルムと無機材料基板とを接合する方法、高分子フィルム積層体及び高分子フィルムと無機材料基板との積層体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008137367A (ja) * 2006-11-08 2008-06-19 Hitachi Chem Co Ltd 金属張積層板、並びに印刷回路板及びその製造方法
JP2008201117A (ja) * 2007-01-24 2008-09-04 Hitachi Chem Co Ltd 樹脂付き金属薄膜、印刷回路板及びその製造方法、並びに、多層配線板及びその製造方法
JP2009073943A (ja) * 2007-09-20 2009-04-09 Seiko Epson Corp 接合方法および接合体
WO2013154107A1 (ja) * 2012-04-10 2013-10-17 ランテクニカルサービス株式会社 高分子フィルムと高分子フィルムとを接合する方法、高分子フィルムと無機材料基板とを接合する方法、高分子フィルム積層体及び高分子フィルムと無機材料基板との積層体

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