WO2021241332A1 - 光導波路パッケージおよび発光装置 - Google Patents

光導波路パッケージおよび発光装置 Download PDF

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Publication number
WO2021241332A1
WO2021241332A1 PCT/JP2021/018825 JP2021018825W WO2021241332A1 WO 2021241332 A1 WO2021241332 A1 WO 2021241332A1 JP 2021018825 W JP2021018825 W JP 2021018825W WO 2021241332 A1 WO2021241332 A1 WO 2021241332A1
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WO
WIPO (PCT)
Prior art keywords
metal body
region
light emitting
optical waveguide
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/018825
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English (en)
French (fr)
Japanese (ja)
Inventor
祥哲 板倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to CN202180036723.5A priority Critical patent/CN115668669A/zh
Priority to EP21812397.4A priority patent/EP4160705A4/en
Priority to US17/927,656 priority patent/US20230213699A1/en
Priority to JP2022526917A priority patent/JP7431958B2/ja
Publication of WO2021241332A1 publication Critical patent/WO2021241332A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4251Sealed packages
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/125Bends, branchings or intersections
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4266Thermal aspects, temperature control or temperature monitoring
    • G02B6/4267Reduction of thermal stress, e.g. by selecting thermal coefficient of materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/1215Splitter
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4274Electrical aspects
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02253Out-coupling of light using lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Definitions

  • the present disclosure relates to an optical waveguide package and a light emitting device.
  • Patent Document 1 An example of the prior art is described in Patent Document 1.
  • the optical waveguide package of the present disclosure has a substrate having a first surface and a second surface located opposite to the first surface, and a third surface located on the second surface and facing the second surface.
  • a clad having a surface, a fourth surface located opposite to the third surface, and an element mounting area open to the fourth surface, located in the clad and extending from the element mounting area.
  • the core includes a first metal body located in the element mounting region and including an element mounting portion in a plan view toward the fourth surface, and the first metal body is the first surface of the substrate. Is connected to the second metal body via the first via conductor penetrating the second surface.
  • the light emitting device of the present disclosure includes the optical waveguide package, a light emitting element connected to the first metal body, and a lens located on the optical path of light emitted from the core.
  • FIG. It is sectional drawing which shows the light emitting apparatus 1 provided with the optical waveguide package 2 of Embodiment 1.
  • FIG. It is a top view of the light emitting device 1. It is a perspective view of a light emitting device 1. It is sectional drawing of the light emitting device 1a of Embodiment 2.
  • FIG. It is a top view which shows the internal structure of a light emitting device 1a.
  • FIG. It is sectional drawing of the light emitting device 1b of Embodiment 4.
  • FIG. It is a bottom view of the light emitting device 1b.
  • FIG. 3 is a plan view of the light emitting device 1d from which the lid 23 is removed. It is a bottom view of the light emitting device 1d. It is sectional drawing which shows the light emitting device 1e of Embodiment 7. It is a top view of the light emitting device 1e which omitted the lid 23. It is a bottom view of the light emitting device 1e. It is sectional drawing which shows the light emitting apparatus 1f of Embodiment 8. FIG. It is a top view of the light emitting device 1f which omitted the lid 23.
  • FIG. 1f It is a bottom view of the light emitting device 1f. It is sectional drawing which shows 1g of the light emitting device of Embodiment 9.
  • FIG. It is a top view of the light emitting device 1g which omitted the lid 23. It is a bottom view of the light emitting device 1g.
  • FIG. It is a top view of the light emitting device 1h which omitted the lid 23.
  • the transmission coefficient for helium is 5 ⁇ 10 -9 cm 3 (STP) mm / (cm 2 ⁇ sec ⁇ cmHg) (25 ° C) or less.
  • STP ⁇ 10 -9 cm 3
  • An optical waveguide that is electrically connected to an optical element having a light-receiving part or a light-emitting part mounted at a position where the optical waveguide is connected to the optical waveguide and an optical element formed on the first surface of the optical waveguide in the optical waveguide.
  • An optical integrated circuit including a metal wiring on the surface of 1 and formed directly under the thin film has been proposed.
  • the first surface of the optical waveguide and the thin film formed on the metal wiring and the second surface of the cap form a gas barrier without interposing the organic material layer.
  • an airtightly sealed void is formed only by the thin film formed in the optical waveguide and the one having the gas barrier property, and the airtight seal is formed.
  • One end of the core and the optical element are located in the gap.
  • FIG. 1 schematically shows the main configurations of the optical waveguide package and the light emitting device in order to facilitate the illustration, and is known for circuit boards, wiring conductors, control ICs, LSIs, etc. (not shown). It may have the configuration of.
  • the same reference numerals are given to the corresponding parts, and duplicate description is omitted.
  • (Embodiment 1) 1 is a cross-sectional view showing a light emitting device 1 provided with the optical waveguide package 2 of the first embodiment
  • FIG. 2 is a plan view of the light emitting device 1
  • FIG. 3 is a perspective view of the light emitting device 1.
  • the light emitting device 1 of the present embodiment includes an optical waveguide package 2, light emitting elements 3R, 3G, 3B of each RGB color, and a condenser lens 4.
  • the optical waveguide package 2 has a substrate 7 having a second surface 6 located opposite to the first surface 5 and the first surface 5, and a third surface 8 located on the second surface 6 and facing the second surface 6. , A fourth surface 9 located opposite to the third surface 8, a clad 11 having an element mounting area 10 open to the fourth surface 9, and a clad 11 located in the clad 11 and extending from the element mounting area 10. It includes a core 12 and a first metal body 14 located in an element mounting region 10 in a plan view toward the fourth surface 9 and including an element mounting portion 13.
  • the substrate 7 may be a ceramic substrate whose dielectric layer is made of a ceramic material.
  • the ceramic material used in the ceramic substrate include an aluminum oxide sintered body, a mulite sintered body, a silicon carbide sintered body, an aluminum nitride material sintered body, and a glass ceramic sintered body.
  • each conductor such as a connection pad for electrical connection between the light emitting elements 3R, 3G, 3b and an external circuit, an internal wiring conductor, and an external connection terminal is arranged on the dielectric layer. Will be done.
  • the material of the substrate 7 may be, for example, an organic substrate in which the dielectric layer is made of an organic material.
  • the organic substrate is, for example, a printed circuit board, a build-up substrate, a flexible substrate, or the like.
  • Examples of the organic material used for the organic substrate include epoxy resin, polyimide resin, polyester resin, acrylic resin, phenol resin, fluororesin and the like.
  • the core 12 is located in the clad 11, and the core 12 and the clad 11 form an optical waveguide.
  • the materials constituting the core 12 and the clad 11 both may be glass or resin, and one may be glass and the other may be resin.
  • the refractive indexes of the core 12 and the clad 11 are different, and the core 12 has a higher refractive index than the clad 11. This difference in refractive index is used to totally reflect light. That is, if an optical path is formed of a material having a high refractive index and the surrounding area is surrounded by a material having a low refractive index, the light can be confined in the core 12 having a high refractive index and optically waveguide.
  • the core 12 has a plurality of dividing paths 19 having the incident end face 17 as one end, a confluent portion 20 in which the plurality of dividing paths 19 meet, and an emitting end surface between the plurality of incident end faces 17 and one emitting end surface 18.
  • a combined waveguide connected to the integrated path 21 having 18 as one end thereof is configured.
  • the condenser lens 4 is arranged to face the emission end surface 18 of the core 12 and the side surface 22 on the emission end surface 18 side of the substrate 7.
  • the condenser lens 4 may be, for example, various lenses such as a Selfock (registered trademark) lens and a rod lens, or an optical element such as a diffraction grating.
  • the optical axis of the condenser lens 4 is located on the central axis of the emission end surface 18.
  • the condenser lens 4, which is an optical member may have at least a part of the emission end surface 18 of the core 12 and the side surface 22 on the emission end surface 18 side of the substrate 7 facing each other. In other words, the condenser lens 4 may be located on the optical path of the light emitted from the core 12.
  • the red (R) light, green (G) light, and blue (B) light emitted from the light emitting elements 3R, 3G, and 3B are incident on the dividing path 19 from the incident end surface 17, and are incident on the junction 20 and the junction 20. After passing through the integrated path 21, the light is collected by the condenser lens 4 and emitted.
  • the condenser lens 4 is, for example, a plano-convex lens having an incident surface formed on a flat surface and an emitting surface having a convex surface.
  • the optical waveguide layer, the light emitting elements 3R, 3G, 3B, and the condenser lens 4 are assembled so that each optical axis of each dividing path 19 coincides with the center of the light emitting portion of each light emitting element 3R, 3G, 3B.
  • Optical waveguide package 2 is configured.
  • the clad 11 is defined as a recess having a bottom surface and an inner wall surface located so as to surround the bottom surface, and the recesses constitute an element mounting area 10.
  • the recess may penetrate from the third surface 8 to the second surface 6.
  • the lid 23 is laminated so as to cover such an element mounting area 10, and the element mounting area 10 penetrates from the fourth surface 9 to the third surface 8.
  • the lid 23 is a downwardly concave component having a size that covers the element mounting area 10 and is capable of allowing wire wiring W by wire bonding.
  • the lid 23 may be formed by wet etching, dry etching, sandblasting, or the like.
  • the first metal body 14 is connected to the second metal body 16 via a first via conductor 15 penetrating from the first surface 5 to the second surface 6 of the substrate 7.
  • FIG. 4A is a cross-sectional view of the light emitting device 1a of the second embodiment
  • FIG. 4B is a plan view showing the internal structure of the light emitting device 1a.
  • the same reference numerals are given to the parts corresponding to the above-described embodiments, and duplicate explanations will be omitted.
  • the first metal body 14 has a first region 14a which is an element mounting portion 13 and a second region 14b other than the first region 14a.
  • the first via conductor 15 is in contact with the first metal body 14 at the second region 14b.
  • the first via conductor 15 is formed in a region avoiding the first region 14a, which is the element mounting portion 13, that is, in the second region 14b, so that the height and inclination of the light emitting elements 3R, 3G, 3B and the like can be determined. Variation can be reduced. Even if the via conductor forming portion is projected or recessed from the substrate surface around the via conductor forming portion, the light emitting element 3R, 3G, is formed by forming the first via conductor 15 while avoiding the element mounting portion 13. Positioning at the time of mounting 3B can be performed with high accuracy. Therefore, the optical axes of the light emitting elements 3R, 3G, and 3B can be made highly accurate.
  • the first metal body 14 of the present embodiment is formed so as to be located only in the opening in a plan view toward the fourth surface 9.
  • the reason for adopting such a configuration is that when the metal body 14 is located up to the third surface 8 between the clad 11 and the substrate 7, the height of the light emitting device is increased by the thickness of the metal body 14 and the height of the light emitting device is increased. Since the magnitude of heat shrinkage differs between the portion not sandwiched by the clad 11 and the portion sandwiched by the clad 11, the entire module is distorted due to a bias in the amount of heat shrinkage, or between the clad 11 and the metal body 14, or the metal body 14. There is a risk of peeling between the substrate 7 and the substrate 7, or cracks in the cladding 11. By locating the first metal body 14 only in the opening to deal with such a problem, it is possible to reduce the height and reduce the influence of heat shrinkage.
  • FIG. 5A is a cross-sectional view of the light emitting device 1b of the fourth embodiment
  • FIG. 5B is a bottom view of the light emitting device 1b
  • FIG. 6A is a cross-sectional view showing another example light emitting device 1b similar to the fourth embodiment.
  • 6B is a bottom view of the light emitting device 1b.
  • the same reference numerals are given to the parts corresponding to the above-described embodiments, and duplicate explanations will be omitted.
  • the second metal body 16 is formed larger than the first metal body 14 in the bottom view toward the fourth surface 9, and in the present embodiment, the second metal body 16 is formed in the longitudinal direction of the substrate 7 (FIG. 5A, FIG.
  • FIG. 7 is a cross-sectional view showing a part of the light emitting device 1c of the fifth embodiment.
  • the second surface 6 has a third region 25 inside the outer periphery of the clad 11 and a fourth region 26 other than the third region 25.
  • the third metal body 27 is located in the fourth region 26.
  • the third metal body 27 is connected to the second metal body 16 via a second via conductor 28 penetrating from the first surface 5 to the second surface 6 of the substrate 7.
  • a lead-out electrode can be formed on the surface without interruption between the lid 23 and the clad 11. Further, by having the third metal body 27 in the outer fourth region 26, it can be easily connected to the external power supply source by the wire wiring W.
  • FIG. 8A is a cross-sectional view showing the light emitting device 1d of the sixth embodiment
  • FIG. 8B is a plan view of the light emitting device 1d from which the lid 23 is removed
  • FIG. 8C is a bottom view of the light emitting device 1d.
  • the same reference numerals are given to the parts corresponding to the above-described embodiments, and duplicate explanations will be omitted.
  • the first metal body 14 and the second metal body 16 have the same shape and are plane-symmetrical with respect to a plane parallel to the first plane 5. With such a configuration, the symmetry in the vertical direction in the side view of FIG. 8A is improved, and the occurrence of distortion directly under the element mounting portion 13 can be reduced.
  • FIG. 9A is a cross-sectional view showing the light emitting device 1e of the seventh embodiment
  • FIG. 9B is a plan view of the light emitting device 1e omitting the lid 23
  • FIG. 9C is a bottom view of the light emitting device 1e.
  • the second metal body 16 is located on the first surface 5, and the opposite surface of the facing surface of the first surface 5 is flat, that is, formed in a planar shape.
  • FIG. 10A is a cross-sectional view showing the light emitting device 1f of the eighth embodiment
  • FIG. 10B is a plan view of the light emitting device 1f without the lid 23
  • FIG. 10C is a bottom view of the light emitting device 1f.
  • the same reference numerals are given to the parts corresponding to the above-described embodiments, and duplicate explanations will be omitted.
  • the second metal body 16 is located on the first surface 5, and the opposite surface of the facing surface of the first surface 5 is flat, that is, formed in a planar shape.
  • the first surface 5 has a fifth region 29 in which the second metal body 16 is located, and a sixth region 30 other than the fifth region 29.
  • the sixth region 30 is provided with a fourth metal body 31.
  • the fourth metal body 31 is formed on a common plane including the surface of the second metal body 16, that is, the opposite surface of the facing surface of the first surface 5 is flat like the second metal body 16. NS. With such a configuration, the second metal body 16 and the fourth metal body 31 can be formed at the same time to simplify the production and improve the heat dissipation.
  • FIG. 11A is a cross-sectional view showing the light emitting device 1g of the ninth embodiment
  • FIG. 11B is a plan view of the light emitting device 1g omitting the lid 23
  • FIG. 11C is a bottom view of the light emitting device 1g.
  • the second metal body 16 is located on the first surface 5, and the first surface 5 is other than the fifth region 29 and the fifth region 29 where the second metal body 16 is located. It has a sixth region 30 and.
  • the fourth region 26 is provided with a fourth metal body 31.
  • the second metal body 16 and the fourth metal body 31 are formed line-symmetrically with respect to the center line L1 including the center of the first surface 5. With such a configuration, it is possible to reduce the asymmetry of the strain distribution due to the temperature rise of the second metal body 16 and the fourth metal body 31 with respect to the center line L1 and alleviate the generated stress.
  • FIG. 12A is a cross-sectional view showing the light emitting device 1h of the tenth embodiment
  • FIG. 12B is a plan view of the light emitting device 1h omitting the lid 23
  • FIG. 12C is a bottom view of the light emitting device 1h.
  • the contact area between the first via conductor 15 and the second region 14b has an area equal to or larger than the area of the first region 14a, that is, an area equal to or larger than the area of the first region 14a.
  • FIG. 13 is a cross-sectional view showing the light emitting device 1i of the eleventh embodiment.
  • the same reference numerals are given to the parts corresponding to the above-described embodiments, and duplicate explanations will be omitted.
  • the light emitting device 1 of the present embodiment includes a lid 23 that seals the element mounting region 10. With such a lid 23, it is possible to prevent the incidental unnecessary light from being incident on the incident end surface 17 of the core 12. In addition, since it is difficult for excess water and gas to enter, corrosion of the light emitting elements 3R, 3G, and 3B is less likely to proceed, and the life of the light emitting elements can be extended. Especially when airtight sealing is possible, the effect is remarkable.
  • the element mounting area 10 is sealed by the lid 23, foreign matter such as airborne substances is prevented from entering the element mounting area 10, and the emission ends of the light emitting elements 3R, 3G, 3B and the incident core 12 are incident. It is possible to reduce the presence of a substance that inhibits the progress of light between the end face 17 and the end face 17.
  • the light emitting device 1i has a metal layer 33 located between the element mounting region 10 and the lid 23, which is a solder bonding layer made of, for example, AuSn or SnAgCu. With such a metal layer 33, the lid 23 can be airtightly bonded to the clad 11 and the element mounting region 10 can be sealed as described above.
  • the light emitting elements 3R, 3G, and 3B are not limited to light emitting diodes (Light Emitting Diodes; LEDs), and are, for example, LDs (Laser Diodes) and VCSELs (Vertical Cavity Surface Emitting Lasers). And so on.
  • the optical waveguide package of the present disclosure has a substrate having a first surface and a second surface located opposite to the first surface, and a third surface located on the second surface and facing the second surface.
  • a clad having a surface, a fourth surface located opposite to the third surface, and an element mounting area open to the fourth surface, located in the clad and extending from the element mounting area.
  • the core includes a first metal body located in the element mounting region and including an element mounting portion in a plan view toward the fourth surface, and the first metal body is the first surface of the substrate. Is connected to the second metal body via the first via conductor penetrating the second surface.
  • the light emitting device of the present disclosure includes the optical waveguide package, a light emitting element connected to the first metal body, and a lens located on the optical path of light emitted from the core.
  • optical waveguide package of the present disclosure it is possible to realize an optical waveguide package with high insulation and low manufacturing cost with a simple connection structure.
  • the light emitting device of the present disclosure it is possible to realize a light emitting device with high insulation and low manufacturing cost with a simple connection structure.
  • Luminous device 2 Optical waveguide package 3R, 3G, 3B Luminous element 4 Condensing lens 5 1st surface 6 2nd surface 7 Substrate 8 3rd surface 9 4th surface 10 Element mounting area 11 Clad 12 core 13 element Mounting part 14 1st metal body 15 1st via conductor 16 2nd metal body 17 Incident end face 18 Exit end face 19 Divided road 20 Combined road 21 Integrated road 22 Side surface 23 Lid 25 3rd area 26 4th area 27 3rd metal Body 28 2nd via conductor 29 5th region 30 6th region 31 4th metal body 33 Metal layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Optical Couplings Of Light Guides (AREA)
PCT/JP2021/018825 2020-05-29 2021-05-18 光導波路パッケージおよび発光装置 Ceased WO2021241332A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202180036723.5A CN115668669A (zh) 2020-05-29 2021-05-18 光波导封装件以及发光装置
EP21812397.4A EP4160705A4 (en) 2020-05-29 2021-05-18 OPTICAL FIBER HOUSING AND LIGHT-EMITTING DEVICE
US17/927,656 US20230213699A1 (en) 2020-05-29 2021-05-18 Optical waveguide package and light-emitting device
JP2022526917A JP7431958B2 (ja) 2020-05-29 2021-05-18 光導波路パッケージおよび発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020094753 2020-05-29
JP2020-094753 2020-05-29

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WO2021241332A1 true WO2021241332A1 (ja) 2021-12-02

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US (1) US20230213699A1 (https=)
EP (1) EP4160705A4 (https=)
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