WO2021221170A1 - ショートアーク放電ランプ用電極およびその生成方法 - Google Patents
ショートアーク放電ランプ用電極およびその生成方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
- H01J61/073—Main electrodes for high-pressure discharge lamps
- H01J61/0735—Main electrodes for high-pressure discharge lamps characterised by the material of the electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/5607—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on refractory metal carbides
- C04B35/5622—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on refractory metal carbides based on zirconium or hafnium carbides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58007—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides
- C04B35/58028—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on refractory metal nitrides based on zirconium or hafnium nitrides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/62222—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
- H01J61/06—Main electrodes
- H01J61/073—Main electrodes for high-pressure discharge lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/84—Lamps with discharge constricted by high pressure
- H01J61/86—Lamps with discharge constricted by high pressure with discharge additionally constricted by close spacing of electrodes, e.g. for optical projection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
- H01J9/142—Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes
- H01J9/146—Surface treatment, e.g. blackening, coating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/963—Surface properties, e.g. surface roughness
- C04B2235/9638—Tolerance; Dimensional accuracy
Definitions
- the present invention relates to an electrode for a short arc discharge lamp, and more particularly to a technique for forming a heat radiating layer of ceramics having high heat dissipation on the electrode surface.
- a step is provided in which a paste obtained by mixing ceramic powder with a solvent is applied to the surface of the electrode body provided with the above, dried, and then sintered to form a heat radiating layer having fine cracks on the surface of the heat radiating layer. .. Therefore, it is possible to provide an electrode for a short arc discharge lamp having high heat dissipation.
- the average roughness Ra of the unevenness is 10 ⁇ m or less. Therefore, the adhesion between the electrode body and the heat radiation layer can be maintained for a longer period of time.
- FIG. 2A is an electron micrograph showing the details of the heat dissipation layer 32 formed on the tungsten body 30.
- FIG. 2B is an enlarged view of a part thereof. It is an arrow view from the arrow 20 of FIG. 2A. It is a figure which shows the distribution of the surface roughness (average roughness Ra and maximum roughness Rz) of a tungsten body 30 in each sample. It is a table which shows the relationship between the average roughness Ra and heat dissipation when the laser processing conditions are changed. It is a table which shows the effect with ceramics other than zirconium oxide.
- Irregular unevenness processing process A tungsten electrode is prepared and the surface is irradiated with laser light to melt and solidify the tungsten surface, resulting in an irregular average roughness Ra of 10 ⁇ m or less in the horizontal and vertical directions. Form irregularities.
- the fiber laser marker TF450 manufactured by Gravotech Co., Ltd. was adopted to solidify and dissolve the tungsten surface of the electrode under the following conditions to form irregular irregularities in the horizontal and vertical directions.
- Ceramic layer forming step A paste of ceramic powder mixed with a solvent is applied to the surface of the electrode body provided with the unevenness, dried, and then sintered. As a result, a heat radiating layer of ceramics having fine cracks on the surface is formed.
- the method of generating the paste will be described.
- the zirconium oxide powder may aggregate into large particles, but by stirring, a zirconium oxide paste having a sufficiently small particle size can be obtained.
- stirring is performed so that the particle size of zirconium oxide is less than 1 ⁇ m.
- the application and sintering of the zirconium oxide paste were repeated a plurality of times to form a heat radiating layer so as to be 5 ⁇ m from the highest position among the irregularities on the surface.
- the 5 ⁇ m is not limited.
- the emissivity of the radiation thermometer is changed so that the temperature of the heat radiation film becomes the predetermined temperature, and this is used as the emissivity of the heat radiation film at the predetermined temperature.
- the inventor created and compared electrodes with different sizes of irregularities formed on the surface of tungsten.
- the emissivity was 0.9 in Example 1 (scanning speed 30 mm / s), whereas it was 0.7 in Reference Example 1 (without laser machining).
- Example 1 As shown in FIG. 3, in Example 1, cracks are generated on the surface of zirconium oxide.
- FIG. 4 shows the relationship between the average roughness Ra and the maximum roughness Rz in each sample.
- the average roughness Ra of each sample is 10 ⁇ m or less excluding sample No. 9.
- Each sample has an improved emissivity as shown in FIG. The emissivity of sample No. 9 is also improved.
- the zirconium oxide has an effect of sneaking into the gaps between the irregularities of the tungsten and adhering to each other.
- the thickness of the heat radiating layer 32 is set to 60 ⁇ m, but the thickness is not limited to this as long as the fine irregularities generated on the tungsten surface are hidden.
- FIG. 7A shows a value (hereinafter referred to as surface roughness randomness Sr) showing the relationship between the maximum roughness Rz and the average roughness Ra of samples Nos. 1 to 9 shown in FIG. 4 as a ratio of the two.
- Samples Nos. 1 to 9 have a surface roughness disorder degree Sr of "5.9" to "9.1".
- FIG. 7B shows the relationship between the average roughness Ra and the maximum roughness Rz when the scanning speeds are 150 mm / s, 300 mm / s, 600 mm / s, and 900 mm / s. Even if the scanning speed is increased in this way, the surface roughness disorder degree Sr is "5.7" to "8.0".
- the conditions other than the scanning speed were the same as in sample 7, with an output of 40 W, a repetition frequency of 50 kHz, and an energy pulse of 0.8 mJ.
- FIG. 8 shows the distribution of the surface roughness disorder degree Sr of each sample of FIGS. 7A and 7B. In this way, each sample is distributed in a relationship that is located on a substantially straight line. Note that sample 9 is not shown in FIG. This is because the surface roughness roughness Sr of this sample is the same as that of other samples, but the values of average roughness Ra and maximum roughness Rz are large, so if this is illustrated, there are multiple other 28 positions. This is because they overlap and it becomes difficult to see the relationship between them.
- the surface roughness disorder degree Sr may be 10 or less, specifically 5 to 9.
- the emissivity of hafnium oxide was not good. Further, although silicon carbide has no problem in terms of emissivity, it is not preferable as a heat radiating layer of an electrode for a short arc discharge lamp because outgas is generated at about 1600 ° C.
- zirconium oxide (density: 5.7 g / cm 3 ): 6.6 g was used to produce the zirconium oxide paste.
- the mass of the material may be changed as follows according to the respective densities.
- laser light is used, but other methods such as electron beam can also be adopted.
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- Manufacturing & Machinery (AREA)
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- Structural Engineering (AREA)
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- Inorganic Chemistry (AREA)
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Abstract
Description
本発明にかかる電極の放熱層の生成方法について、説明する。
タングステン電極を準備し、表面にレーザ光を照射し、これにより、タングステン表面を溶解・凝固させて、水平・垂直方向において不規則な平均粗さRaが10 μm以下の凹凸を形成する。
繰り返し周波数:80 kHz,
パルス幅:100 nm,
波長:1064 nm,
レーザ径:約60μm,
スキャン速度:30 mm/s,
隣接する2つのラインの間隔:約0.01 mm,
周囲の温度:室温,
周囲のガス:窒素,
圧力:大気圧,
この場合、1パルスあたりのエネルギー[J] = レーザーの出力[W] /レーザーの繰り返し周波数[Hz]であるので、本実施例においては、1パルスあたりのエネルギーは、40 W/ 80 kHz = 0.5 mJとなる。
前記凹凸が設けられた電極本体表面にセラミックスの粉末を溶媒に混ぜたペーストを塗布し、乾燥後に焼結させる。これにより、表面に微細な亀裂を有するセラミックスの放熱層を形成する。
図2Aに、本発明にかかるショートアーク放電ランプの電極1の拡大断面図(500倍)を示す。図2Aで白い領域はタングステンであり、その上に酸化ジルコニウムの放熱層が形成されている。同図では、どの領域がタングステン、酸化ジルコニウムなのかがわかりにくいので、図2Aの一部を更に拡大した写真を図2Bに示す。同図において、タングステン本体30と酸化ジルコニウム層32との界面に形成されている黒い部分31は空洞である。また、酸化ジルコニウム層32に存在する空洞の内、一部の空洞は、酸化ジルコニウム層32の表面まで貫通している(例えば空洞35)。
本実施形態においては、酸化ジルコニウムの放熱層を生成する場合について説明したが、図6に示すように、窒化ジルコニウム、炭化ジルコニウムでも、同様に、放熱率の高い放熱層を生成することができる。
ZrN (密度:7.0 g/cm3): 8.1 g
また、本実施形態においては、ショート放電ランプの陽極に適用した場合について説明したが、陰極に適用することも可能である。
30・・・・・タングステン本体
32・・・・・酸化ジルコニウム層
Claims (3)
- 高融点金属で構成された電極本体の表面に、酸化ジルコニウム、炭化ジルコニウムまたは窒化ジルコニウムの放熱層を備えたショートアーク放電ランプ用電極の生成方法であって、
前記電極本体表面にレーザ照射し、前記電極表面を溶融・凝固させて平均粗さRaが21 μm以下の凹凸を形成するステップ、
前記凹凸が設けられた電極本体表面にセラミックスの粉末を溶媒に混ぜたペーストを塗布し、乾燥後に焼結させて、前記放熱層の表面に微細な亀裂を有する放熱層を形成するステップ、
を備えたショートアーク放電ランプ用電極の生成方法。 - 請求項1のショートアーク放電ランプ用電極の生成方法において、
前記凹凸の最大粗さRz/平均粗さRaが5~9であること、
を特徴とするショートアーク放電ランプ用電極の生成方法。 - 請求項2のショートアーク放電ランプ用電極の生成方法において、
前記凹凸の平均粗さRaは10 μm以下であること、
を特徴とするショートアーク放電ランプ用電極の生成方法。
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CN202180005783.0A CN114503236B (zh) | 2020-04-30 | 2021-04-30 | 短弧放电灯用电极及其生成方法 |
KR1020227012460A KR20220054888A (ko) | 2020-04-30 | 2021-04-30 | 쇼트 아크 방전 램프용 전극 및 그 생성 방법 |
JP2021557252A JP7013068B1 (ja) | 2020-04-30 | 2021-04-30 | ショートアーク放電ランプ用電極およびその生成方法 |
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JP2004259639A (ja) * | 2003-02-27 | 2004-09-16 | Allied Material Corp | 放電ランプ及びその電極構造 |
JP2013157100A (ja) * | 2012-01-27 | 2013-08-15 | Iwasaki Electric Co Ltd | 高圧放電ランプ及びその製造方法 |
US20200095669A1 (en) * | 2017-05-12 | 2020-03-26 | Plansee Se | High-temperature component and method for producing a high-temperature component |
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US2172207A (en) * | 1936-09-19 | 1939-09-05 | Siemens Ag | Glow cathode |
JPH09231946A (ja) * | 1996-02-23 | 1997-09-05 | Ushio Inc | ショートアーク型放電ランプ |
JP3561594B2 (ja) * | 1996-11-18 | 2004-09-02 | 株式会社神戸製鋼所 | 放電管および放電管用電極 |
JP3838110B2 (ja) * | 2002-01-31 | 2006-10-25 | ウシオ電機株式会社 | 放電ランプ用陽電極およびショートアーク放電ランプ |
JP4650562B2 (ja) * | 2008-12-03 | 2011-03-16 | ウシオ電機株式会社 | ショートアーク型放電ランプ |
JP2009105059A (ja) * | 2009-01-05 | 2009-05-14 | Allied Material Corp | 放電ランプの電極構造 |
CN104018135B (zh) * | 2014-04-25 | 2016-08-24 | 厦门虹鹭钨钼工业有限公司 | 一种用于短弧高压气体放电灯阳极表面粗糙化的方法 |
DE102018206770A1 (de) * | 2018-05-02 | 2019-11-07 | Osram Gmbh | Elektrode für eine Entladungslampe, Entladungslampe und Verfahren zum Herstellen einer Elektrode |
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JP2004259639A (ja) * | 2003-02-27 | 2004-09-16 | Allied Material Corp | 放電ランプ及びその電極構造 |
JP2013157100A (ja) * | 2012-01-27 | 2013-08-15 | Iwasaki Electric Co Ltd | 高圧放電ランプ及びその製造方法 |
US20200095669A1 (en) * | 2017-05-12 | 2020-03-26 | Plansee Se | High-temperature component and method for producing a high-temperature component |
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