WO2021188168A3 - Halide perovskite nanocrystal array and methods of making the same - Google Patents

Halide perovskite nanocrystal array and methods of making the same Download PDF

Info

Publication number
WO2021188168A3
WO2021188168A3 PCT/US2020/063324 US2020063324W WO2021188168A3 WO 2021188168 A3 WO2021188168 A3 WO 2021188168A3 US 2020063324 W US2020063324 W US 2020063324W WO 2021188168 A3 WO2021188168 A3 WO 2021188168A3
Authority
WO
WIPO (PCT)
Prior art keywords
halide perovskite
array
perovskite nanocrystal
making
methods
Prior art date
Application number
PCT/US2020/063324
Other languages
French (fr)
Other versions
WO2021188168A2 (en
WO2021188168A9 (en
Inventor
Chad A. Mirkin
Jingshan Du
Donghoon Shin
Vinayak P. Dravid
Original Assignee
Northwestern University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US201962944734P external-priority
Application filed by Northwestern University filed Critical Northwestern University
Priority to CA3164023A priority Critical patent/CA3164023A1/en
Priority to CN202080084732.7A priority patent/CN115380395A/en
Priority to AU2020437175A priority patent/AU2020437175A1/en
Priority to EP20925582.7A priority patent/EP4070393A2/en
Priority to KR1020227018911A priority patent/KR20220110496A/en
Publication of WO2021188168A2 publication Critical patent/WO2021188168A2/en
Publication of WO2021188168A9 publication Critical patent/WO2021188168A9/en
Publication of WO2021188168A3 publication Critical patent/WO2021188168A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002—Deposition of organic semiconductor materials on a substrate
    • H01L51/0003—Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0004—Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing, screen printing
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0001—Processes specially adapted for the manufacture or treatment of devices or of parts thereof
    • H01L51/0002—Deposition of organic semiconductor materials on a substrate
    • H01L51/0003—Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating
    • H01L51/0007—Deposition of organic semiconductor materials on a substrate using liquid deposition, e.g. spin coating characterised by the solvent
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
    • H01L51/5012—Electroluminescent [EL] layer
    • H01L51/502—Electroluminescent [EL] layer comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A method of forming a halide perovskite nanocrystal array having a plurality of halide perovskite nanocrystals arranged in a pattern can include coating an array of pens with a first ink comprising at least one first perovskite precursor having the formula AX and at least one second perovskite precursor having the formula BX'2 dissolved in a solvent. A is a cation, B is a metal, and X and X' are each a halogen. The method further includes contacting a substrate with the coated pen array to thereby deposit the first ink indias a pattern of printed indicia on the substrate. The printed indicia form nanoreactors on the substrate and a halide perovskite nanocrystal nucleates and grows within each nanoreactor to form the halide perovskite nanocrystal array.
PCT/US2020/063324 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and methods of making the same WO2021188168A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CA3164023A CA3164023A1 (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and methods of making the same
CN202080084732.7A CN115380395A (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and preparation method thereof
AU2020437175A AU2020437175A1 (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and methods of making the same
EP20925582.7A EP4070393A2 (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and methods of making the same
KR1020227018911A KR20220110496A (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and method for preparing same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962944734P 2019-12-06 2019-12-06
US62/944,734 2019-12-06
US202063080450P 2020-09-18 2020-09-18
US63/080,450 2020-09-18

Publications (3)

Publication Number Publication Date
WO2021188168A2 WO2021188168A2 (en) 2021-09-23
WO2021188168A9 WO2021188168A9 (en) 2021-11-11
WO2021188168A3 true WO2021188168A3 (en) 2021-12-09

Family

ID=77771860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2020/063324 WO2021188168A2 (en) 2019-12-06 2020-12-04 Halide perovskite nanocrystal array and methods of making the same

Country Status (6)

Country Link
EP (1) EP4070393A2 (en)
KR (1) KR20220110496A (en)
CN (1) CN115380395A (en)
AU (1) AU2020437175A1 (en)
CA (1) CA3164023A1 (en)
WO (1) WO2021188168A2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110093065A (en) * 2019-04-29 2019-08-06 清华大学 A kind of nanocrystalline ink with fluorescent characteristic and preparation method thereof and patterning application

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110093065A (en) * 2019-04-29 2019-08-06 清华大学 A kind of nanocrystalline ink with fluorescent characteristic and preparation method thereof and patterning application

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GAO HANFEI, QIU YUCHEN, FENG JIANGANG, LI SHUANG, WANG HUIJIE, ZHAO YUYAN, WEI XIAO, JIANG XIANGYU, SU YEWANG, WU YUCHEN, JIANG LE: "Nano-confined crystallization of organic ultrathin nanostructure arrays with programmable geometries", NATURE COMMUNICATIONS, vol. 10, no. 1, 1 December 2019 (2019-12-01), pages 1 - 8, XP055879736, DOI: 10.1038/s41467-019-11883-6 *
LIU G., EICHELSDOERFER D. J., RASIN B., ZHOU Y., BROWN K. A., LIAO X., MIRKIN C. A.: "Delineating the pathways for the site-directed synthesis of individual nanoparticles on surfaces", PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES, NATIONAL ACADEMY OF SCIENCES, vol. 110, no. 3, 15 January 2013 (2013-01-15), pages 887 - 891, XP055879744, ISSN: 0027-8424, DOI: 10.1073/pnas.1220689110 *
ZHENKUN GU, KANG WANG, HUIZENG LI, MENG GAO, LIHONG LI, MINXUAN KUANG, YONG SHENG ZHAO, MINGZHU LI, YANLIN SONG: "Direct-Writing Multifunctional Perovskite Single Crystal Arrays by Inkjet Printing", SMALL, WILEY, vol. 13, no. 8, 1 February 2017 (2017-02-01), pages 1603217, XP055728327, ISSN: 1613-6810, DOI: 10.1002/smll.201603217 *

Also Published As

Publication number Publication date
WO2021188168A2 (en) 2021-09-23
EP4070393A2 (en) 2022-10-12
WO2021188168A9 (en) 2021-11-11
AU2020437175A1 (en) 2022-06-16
CA3164023A1 (en) 2021-09-23
KR20220110496A (en) 2022-08-08
CN115380395A (en) 2022-11-22

Similar Documents

Publication Publication Date Title
CN105702624A (en) Laminated flexible substrate and production method
JP2015072012A5 (en)
WO2010064344A1 (en) Exterior part and method of manufacturing same
EP1916726A3 (en) Mask and deposition apparatus using the same
CN105723817A (en) Flexible printed circuit board and method for manufacturing same
DE3586099D1 (en) DEPOSITING A COATING ON A POROUS SUBSTRATE.
CN109243982B (en) Electrofluid spray printing etching method for manufacturing curved integrated circuit
BR7402565D0 (en) METAL SUBSTRATE COATED WITH PERFLUORCARBON POLYMER, RESISTANT TO CORROSION, AND PROCESS FOR PREPARATION OF THE SAME
RU2016115129A (en) PATTERN WITH OPTICALLY VARIABLE STRUCTURE FOR PROTECTION FROM FALSE AND METHOD FOR ITS MANUFACTURE
JP2015122497A (en) Apparatus for sidewall protection and method for sidewall protection
WO2021188168A3 (en) Halide perovskite nanocrystal array and methods of making the same
CN107578254A (en) A kind of ceramic method for anti-counterfeit based on the micro- tag slot of addition
CN104888999A (en) Modeling method for viable spray gun coating deposition model
CN107579015A (en) The method for measurement of 3D nand memory hierarchic structure critical sizes
CN103602949A (en) Multicolor vacuum coating and processing technology thereof
CN107093681A (en) A kind of pixel defining layer preparation method, pixel defining layer and display panel
CN110379576A (en) A kind of resistor body printing process of more resistance values
KR102257236B1 (en) Mask for oled
CN101327715B (en) Method for coating film and internally carving into picture and lamp cup product
CN109475895A (en) Film forming method and membrane formation device
CN105346329A (en) Three-dimensional dynamic large-scene-depth anti-fake pattern printed matter and printing method thereof
CN105774288A (en) Printing plate, laminated ceramic electronic component producing method, and printer
CN104608514A (en) Printing method
JP5923910B2 (en) Manufacturing method of printed matter
JP2013115237A (en) Intaglio plate for photogravure offset printing, method of manufacturing printed wiring base material using the same, and printed wiring base material

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20925582

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2022533232

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 3164023

Country of ref document: CA

ENP Entry into the national phase

Ref document number: 2020437175

Country of ref document: AU

Date of ref document: 20201204

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2020925582

Country of ref document: EP

Effective date: 20220706

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20925582

Country of ref document: EP

Kind code of ref document: A2