WO2021177469A1 - 純銅板 - Google Patents

純銅板 Download PDF

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Publication number
WO2021177469A1
WO2021177469A1 PCT/JP2021/008945 JP2021008945W WO2021177469A1 WO 2021177469 A1 WO2021177469 A1 WO 2021177469A1 JP 2021008945 W JP2021008945 W JP 2021008945W WO 2021177469 A1 WO2021177469 A1 WO 2021177469A1
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Prior art keywords
less
mass ppm
pure copper
copper plate
heat treatment
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PCT/JP2021/008945
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English (en)
French (fr)
Japanese (ja)
Inventor
裕隆 松永
優樹 伊藤
広行 森
典久 飯田
基裕 日高
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2021540094A priority Critical patent/JP7342956B2/ja
Priority to CN202180018747.8A priority patent/CN115210394B/zh
Priority to US17/909,707 priority patent/US12331386B2/en
Priority to KR1020227031104A priority patent/KR102927901B1/ko
Priority to EP21764331.1A priority patent/EP4116448A4/en
Publication of WO2021177469A1 publication Critical patent/WO2021177469A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Definitions

  • the present invention relates to a pure copper plate suitable for electric / electronic parts such as a heat sink and a thick copper circuit, and more particularly to a pure copper plate in which coarsening of crystal grains at the time of heating is suppressed.
  • the present application claims priority based on Japanese Patent Application No. 2020-038770 filed in Japan on March 6, 2020, the contents of which are incorporated herein by reference.
  • an insulating circuit board in which a copper material is bonded to a ceramic substrate to form the above-mentioned heat sink or thick copper circuit is used.
  • the joining temperature is often set to 800 ° C. or higher, and there is a risk that the crystal grains of the copper material constituting the heat sink or the thick copper circuit may become coarse at the time of joining.
  • crystal grains tend to become coarse.
  • Patent Document 1 proposes a pure copper plate in which the growth of crystal grains is suppressed.
  • Patent Document 1 it is described that by containing 0.0006 to 0.0015 wt% of S, it is possible to adjust the crystal grains to a certain size even if the heat treatment is performed at a recrystallization temperature or higher.
  • the pure copper plate when firmly joining the ceramic substrate and the copper plate, high-temperature heat treatment is performed in a state where the ceramic substrate and the copper plate are pressurized at a relatively high pressure (for example, 0.1 MPa or more) in the stacking direction. ..
  • a relatively high pressure for example, 0.1 MPa or more
  • the pure copper plate the crystal grains tend to grow non-uniformly, and the coarsening and non-uniform growth of the crystal grains may cause poor bonding, poor appearance, and defects in the inspection process.
  • the pure copper plate is required to have a small change in crystal grain size and a uniform size even after pressure heat treatment for joining with different materials. There is.
  • Patent Document 1 the coarsening of crystal grains is suppressed by specifying the content of S, but the coarsening of crystal grains is sufficiently suppressed after the pressure heat treatment only by specifying the content. Sometimes the effect could not be obtained.
  • the crystal grains may be locally coarsened and the crystal structure may become non-uniform.
  • the S content is increased in order to suppress the coarsening of the crystal grains, there is a problem that the hot workability is greatly lowered and the production yield of the pure copper plate is greatly lowered. there were.
  • the present invention has been made in view of the above-mentioned circumstances, and is a pure copper plate which is excellent in hot workability and can suppress coarsening and non-uniformity of crystal grains even after pressure heat treatment.
  • the purpose is to provide.
  • Some of the impurity elements contained in the pure copper plate in a small amount have a crystal grain growth suppressing effect of suppressing the coarsening of the crystal grains by being present at the crystal grain boundaries. Therefore, by utilizing an element having a crystal grain growth suppressing effect (hereinafter, referred to as a crystal grain growth suppressing element), it is possible to suppress coarsening and non-uniformity of crystal grains even after pressure heat treatment. I got the knowledge of. In addition, it was found that it is effective to regulate the content of a specific element in order to fully exert the action and effect of this crystal grain growth inhibitory element. Furthermore, it has been found that it is effective to make the grain size of the crystal grains relatively large and to keep the strain energy accumulated in the material low in order to suppress the driving force for the growth of the crystal grains during the pressure heat treatment. Obtained.
  • the pure copper plate of the present invention has a Cu content of 99.96 mass% or more and a P content of 0.01 mass ppm or more and 3 mass ppm or less.
  • Ag and Fe total content is 3 massppm or more
  • the balance is a composition with unavoidable impurities
  • the average crystal grain size of the crystal grains on the rolled surface is 10 ⁇ m or more
  • the measurement area is 1 mm 2 or more by the EBSD method.
  • Grain boundary at the boundary where the orientation difference between adjacent pixels is 5 ° or more, except for the measurement points where the CI value analyzed by the data analysis software OIM is 0.1 or less. It is characterized in that the KAM (Kernel Quantity Measurement) value is 1.5 or less when it is regarded as.
  • the Cu content is 99.96 mass% or more
  • the P content is 0.01 mass ppm or more and 3.00 mass ppm or less
  • the total content of Ag and Fe is 3.0 mass ppm or more. Since the balance has a composition of unavoidable impurities, it is possible to suppress the coarsening of crystal grains by solidifying Ag and Fe in the copper matrix. Further, since the P content is 3.00 mass ppm or less, it is possible to suppress a decrease in hot workability.
  • the average crystal grain size of the crystal grains on the rolled surface is 10 ⁇ m or more, the grain size is relatively large before the pressure heat treatment, the driving force for recrystallization during the pressure heat treatment is small, and the grains. It is possible to suppress the growth. Since the above-mentioned KAM value is 1.50 or less, the dislocation density is relatively low and the accumulated strain energy is small, so that the driving force for recrystallization during pressure heat treatment is small and grain growth is suppressed. It becomes possible to do.
  • the S content is in the range of 2.0 mass ppm or more and 20.0 mass ppm or less.
  • the S content is in the range of 2.0 mass ppm or more and 20.0 mass ppm or less.
  • the total content of Mg, Sr, Ba, Ti, Zr, Hf and Y is preferably 10.0 mass ppm or less.
  • Elements such as Mg, Sr, Ba, Ti, Zr, Hf, and Y which may be contained as unavoidable impurities, segregate at the grain boundaries and suppress grain coarsening suppressing elements (S, Se). , Te, etc.) and may form compounds and inhibit the action of crystal grain growth inhibitory elements. Therefore, by limiting the total content of Mg, Sr, Ba, Ti, Zr, Hf, and Y to 10.0 mass ppm or less, the crystal grain growth inhibitory effect of the crystal grain growth inhibitory element can be sufficiently exerted. Even after the heat treatment, it is possible to surely suppress the coarsening and non-uniformity of the crystal grains.
  • the pure copper plate of the present invention 50 mm ⁇ 50 mm after performing pressure heat treatment under the conditions of a pressure pressure of 0.6 MPa, a heating temperature of 850 ° C., and a holding time at the heating temperature of 90 minutes.
  • the ratio d max / d ave of the maximum crystal grain size d max and the average crystal grain size d ave in the range is preferably 20.0 or less. In this case, even when the pressure heat treatment is performed under the above conditions, it is possible to reliably suppress the non-uniformity of the crystal grains, and it is possible to further suppress the occurrence of poor appearance.
  • the Vickers hardness is preferably 150 HV or less.
  • the Vickers hardness is 150 HV or less, it is sufficiently soft, and the characteristics as a pure copper plate are secured, so that it is particularly suitable as a material for electric / electronic parts for high current applications.
  • the present invention it is possible to provide a pure copper plate having excellent hot workability and capable of suppressing coarsening and non-uniformity of crystal grains even after pressure heat treatment.
  • the pure copper plate of the present embodiment is used as a material for electric / electronic parts such as a heat sink and a thick copper circuit, and is used by being joined to, for example, a ceramic substrate when molding the above-mentioned electric / electronic parts. It is a thing.
  • the pure copper plate of the present embodiment has a Cu content of 99.96 mass% or more, a P content of 0.01 mass ppm or more and 3.00 mass ppm or less, and a total content of Ag and Fe of 3.0 mass ppm or more. It is said that the balance has a composition of unavoidable impurities.
  • “mass%” and “massppm” may be described as “%” and "ppm”, respectively.
  • the S content is preferably in the range of 2.0 mass ppm or more and 20.0 mass ppm or less. Further, in the pure copper plate of the present embodiment, the total content of one or more (A element group) selected from Mg, Sr, Ba, Ti, Zr, Hf, and Y is 10.0 mass ppm or less. It is preferable to have.
  • the average crystal grain size of the crystal grains on the rolled surface is 10 ⁇ m or more.
  • the average crystal grain size of the crystal grains on the rolled surface conforms to, for example, the cutting method of JIS H 0501, and the number of crystal grains that can be completely cut by drawing five vertical and horizontal line segments on the rolled surface. Can be counted and calculated as the average value of the cutting lengths.
  • the measurement area of 1 mm 2 or more is measured by the EBSD method in steps of 5 ⁇ m, and the CI value analyzed by the data analysis software OIM is 0.1 or less.
  • the KAM (Kernel Average Measurement) value is 1.50 or less when the boundary where the orientation difference between adjacent pixels is 5 ° or more is regarded as the grain boundary.
  • the pure copper plate of the present embodiment 50 mm ⁇ after performing the pressure heat treatment under the conditions that the pressurizing pressure is 0.6 MPa, the heating temperature is 850 ° C., and the holding time at the heating temperature is 90 minutes.
  • the ratio d max / d ave of the maximum crystal grain size d max and the average crystal grain size d ave in the range of 50 mm is preferably 20 or less.
  • the maximum crystal grain size d max is determined by, for example, selecting an arbitrary area of 50 mm ⁇ 50 mm, the major axis of the crystal grain having the coarsest crystal grain in the range, and the grain boundary when a line is drawn perpendicular to it. It can be obtained as the average value of the minor diameters to be cut.
  • the Vickers hardness is preferably 150 HV or less.
  • the purity of Cu is defined as 99.96 mass% or more.
  • the purity of Cu is preferably 99.965 mass% or more, and more preferably 99.97 mass% or more.
  • the upper limit of the purity of Cu is not particularly limited, but if it exceeds 99.999 mass%, a special refining process is required and the manufacturing cost increases significantly. Therefore, it may be 99.999 mass% or less. preferable.
  • P 0.01 mass ppm or more and 3.00 mass ppm or less
  • P is widely used as an element that detoxifies oxygen in copper.
  • P when P is contained in a certain amount or more, not only oxygen but also the action of the crystal grain growth inhibitory element existing at the grain boundary is inhibited. Therefore, when heated to a high temperature, the crystal grain growth inhibitory element does not sufficiently act, and there is a possibility that coarsening and non-uniformity of crystal grains may occur. In addition, the hot workability is also lowered. Therefore, in the present invention, the content of P is limited to 0.01 mass ppm or more and 3.00 mass ppm or less.
  • the upper limit of the P content is preferably 2.50 mass ppm or less, and more preferably 2.00 mass ppm or less.
  • the lower limit of the P content is preferably 0.02 mass ppm or more, and more preferably 0.03 mass ppm or more.
  • Total content of Ag and Fe 3.0 massppm or more
  • Ag and Fe are elements having an action of suppressing coarsening of crystal grains by solid solution in the copper matrix. Therefore, when the total content of Ag and Fe is 3.0 mass ppm or more in the present embodiment, the effect of suppressing grain grain coarsening by Ag and Fe can be sufficiently exerted, and even after the pressure heat treatment. It is possible to reliably suppress the coarsening of crystal grains.
  • the lower limit of the total content of Ag and Fe is preferably 5.0 mass ppm or more, more preferably 7.0 mass ppm or more, and even more preferably 10.0 mass ppm or more.
  • the upper limit of the total content of Ag and Fe is not particularly limited, but addition of more than necessary causes an increase in manufacturing cost and a decrease in conductivity, so it is preferably less than 100.0 mass ppm and less than 50.0 mass ppm. More preferably, it is more preferably less than 20.0 mass ppm.
  • S is an element that has an effect of suppressing coarsening of crystal grains by suppressing grain boundary movement and lowers hot workability. Therefore, when the content of S is 2.0 mass ppm or more in the present embodiment, the effect of suppressing the coarsening of crystal grains by S can be sufficiently exerted, and the coarsening of crystal grains can be sufficiently achieved even after the pressure heat treatment. Can be reliably suppressed. On the other hand, when the S content is limited to 20.0 mass ppm or less, hot workability can be ensured.
  • the lower limit of the S content is preferably 2.5 mass ppm or more, and more preferably 3.0 mass ppm or more.
  • the upper limit of the S content is preferably 17.5 mass ppm or less, and more preferably 15.0 mass ppm or less.
  • Total content of Mg, Sr, Ba, Ti, Zr, Hf, Y (element A group): 10.0 massppm or less) Mg, Sr, Ba, Ti, Zr, Hf, and Y (element A group) contained as unavoidable impurities segregate at the grain boundaries and suppress grain coarsening suppressing elements (S, Se). , Te, etc.) and compounds may be formed and the action of the grain grain coarsening inhibitoring element may be inhibited. Therefore, in order to surely suppress the coarsening of crystal grains after heat treatment, the total content of Mg, Sr, Ba, Ti, Zr, Hf, and Y (element A group) should be 10.0 mass ppm or less. Is preferable.
  • the total content of Mg, Sr, Ba, Ti, Zr, Hf, and Y (element A group) is preferably 7.5 mass ppm or less, and more preferably 5.0 mass ppm or less.
  • Al, Cr, Sn, Be, Cd, Mg, Ni, Pb suppress grain growth by solid solution in the copper matrix, segregation at grain boundaries, and formation of oxides. Has the effect of Therefore, in order to reliably suppress the coarsening of crystal grains after heat treatment, Al, Cr, Sn, Be, Cd, Mg, Ni, and Pb (M element group) are contained in excess of 2.0 mass ppm in total. It is preferable to do so.
  • Al, Cr, Sn, Be, Cd, Mg, Ni, Pb (M element group) is intentionally contained, Al, Cr, Sn, Be, Cd, Mg, Ni, Pb (M element group) ) Is more preferably 2.1 mass ppm or more, more preferably 2.3 mass ppm or more, further preferably 2.5 mass ppm or more, and optimally 3.0 mass ppm or more. Is. On the other hand, if Al, Cr, Sn, Be, Cd, Mg, Ni, Pb (M element group) is contained more than necessary, there is a concern that the conductivity may decrease.
  • the upper limit of the total content of Ni and Pb (M element group) is preferably less than 100.0 mass ppm, more preferably less than 50.0 mass ppm, further preferably less than 20.0 mass ppm, and 10.0 mass ppm. It is even more preferable to be less than.
  • unavoidable impurities include B, Bi, Ca, Sc, rare earth elements, V, Nb, Ta, Mo, W, Mn, Re, Ru, Os, Co, Rh, Ir, Pd, and so on.
  • Examples thereof include Pt, Au, Zn, Hg, Ga, In, Ge, As, Sb, Tl, N, C, Si, Li, H, O and the like. It is preferable to reduce these unavoidable impurities because they may lower the conductivity.
  • the average crystal grain size of the crystal grains on the rolled surface is 10 ⁇ m or more.
  • the average crystal grain size of the crystal grains on the rolled surface is preferably 15 ⁇ m or more, and more preferably 20 ⁇ m or more.
  • KAM value 1.50 or less
  • KAM Kernel Average Measurement
  • the KAM (Kernel Average Measurement) value measured by EBSD is a value calculated by averaging the directional differences between one pixel and the pixels surrounding the pixel. Since the shape of the pixel is a regular hexagon, when the proximity order is 1 (1st), the average value of the orientation differences with the six adjacent pixels is calculated as the KAM value. By using this KAM value, the local orientation difference, that is, the strain distribution can be visualized. Since this region having a high KAM value is a region having a high dislocation density introduced during processing, recrystallization is likely to proceed, and there is a risk that the growth of crystal grains and the non-uniformity of the structure will be promoted.
  • the KAM value is preferably 1.40 or less, and more preferably 1.30 or less.
  • the KAM value is obtained with the proximity order as 1.
  • the CI value indicating the clarity of the crystallinity of the analysis point is 0.1 or less, and the KAM value in the structure excluding the region where the processed structure is remarkably developed and a clear crystal pattern cannot be obtained.
  • the average value is calculated.
  • the average value of the KAM values is preferably calculated using, for example, the KAM values measured at three or more points equidistant from the center of the rolled surface.
  • the ratio d max / d ave of the maximum crystal grain size d max and the average crystal grain size d ave in the range of 50 mm ⁇ 50 mm after the above-mentioned pressure heat treatment is more preferably 15.0 or less.
  • the pure copper plate of the present embodiment by setting the Vickers hardness to 150 HV or less, the characteristics as a pure copper plate are ensured, and it is particularly suitable as a material for electric / electronic parts for high current applications. Further, it is sufficiently soft, and even when it is joined to another member such as a ceramic substrate and a cold heat cycle is applied, it is possible to release the thermal strain generated by the deformation of the pure copper plate.
  • the Vickers hardness of the pure copper plate is more preferably 140 HV or less, further preferably 130 HV or less, and most preferably 110 HV or less.
  • the lower limit of the Vickers hardness of the pure copper plate is not particularly limited, but if the hardness is too low, it is easily deformed at the time of manufacturing and handling becomes difficult. Therefore, it is preferably 30 HV or more, more preferably 45 HV or more. Most preferably, it is 60 HV or more.
  • the copper raw material is melted to produce a molten copper.
  • the copper raw material for example, it is preferable to use 4 NCu having a purity of 99.99 mass% or more and 5 NCu having a purity of 99.999 mass% or more.
  • S is added, S alone, Cu—S mother alloy, or the like can be used.
  • Cu—S mother alloy it is preferable to use 4 NCu having a purity of 99.99 mass% or more and 5 NCu having a purity of 99.999 mass% or more.
  • the dissolution step since the hydrogen concentration reduction, their atmosphere dissolution vapor pressure of H 2 O is by low inert gas atmosphere (e.g.
  • Heat treatment step S02 The resulting ingot is cut and the surface is ground to remove scale. After that, heat treatment is performed for homogenization and solutionification.
  • the heat treatment conditions are not particularly limited, but preferably, the heat treatment temperature is in the range of 500 ° C. or higher and 900 ° C. or lower, and the holding time at the heat treatment temperature is 0.1 hour or longer and 100 hours in order to suppress the formation of precipitates. It is preferable to carry out in a non-oxidizing or reducing atmosphere within the following range.
  • the cooling method is not particularly limited, but it is preferable to select a method such as water quenching in which the cooling rate is 200 ° C./min or more. Further, in order to make the structure uniform, hot working may be performed after the heat treatment.
  • the processing method is not particularly limited, but when the final form is a plate or a strip, rolling is adopted. Alternatively, forging, pressing, or groove rolling may be adopted.
  • the temperature during hot working is not particularly limited, but is preferably in the range of 500 ° C. or higher and 900 ° C. or lower.
  • the total processing rate of hot working is preferably 50% or more, more preferably 60% or more, and even more preferably 70% or more.
  • the copper material after the heat treatment step S02 is subjected to intermediate rolling to be processed into a predetermined shape.
  • the temperature condition in the intermediate rolling step S03 is not particularly limited, but it is preferably performed in the range of ⁇ 200 ° C. or higher and 200 ° C. or lower. Further, the processing ratio in the intermediate rolling step S03 is appropriately selected so as to approximate the final shape, but it is preferably 30% or more in order to improve the productivity.
  • the copper material after the intermediate rolling step S03 is heat-treated for the purpose of recrystallization.
  • the average crystal grain size of the recrystallized grains on the rolled surface is 10 ⁇ m or more. If the recrystallized grains are fine, the growth of the crystal grains and the non-uniformity of the structure may be promoted when the recrystallized grains are subsequently subjected to the pressure heat treatment.
  • the heat treatment conditions of the recrystallization heat treatment step S04 are not particularly limited, but it is preferable to keep the heat treatment temperature in the range of 200 ° C. or higher and 900 ° C. or lower in the range of 1 second or more and 10 hours or less.
  • a short-time heat treatment may be held at 850 ° C. for 5 seconds, and a long-time heat treatment of 1 hour or more may be held at 400 ° C. for 8 hours.
  • the intermediate rolling step S03 and the recrystallization heat treatment step S04 may be repeated twice or more.
  • the copper material after the recrystallization heat treatment step S04 may be tempered. If it is not necessary to increase the material strength, the tempering process may not be performed.
  • the processing rate of the tempering process is not particularly limited, but it is preferable to carry out the tempering process within a range of more than 0% and 50% or less in order to adjust the material strength. Further, in order to lower the material strength and reduce the KAM value to 1.50 or less, it is more preferable to make it more than 0% and 45% or less. Further, if necessary, further heat treatment may be performed after the tempering process in order to remove the residual strain.
  • the final thickness is not particularly limited, but is preferably in the range of 0.5 mm or more and 5 mm or less, for example.
  • the pure copper plate according to this embodiment is produced.
  • the Cu content is 99.96 mass% or more
  • the P content is 0.01 mass ppm or more and 3.00 mass ppm or less
  • the average crystal grain size of the crystal grains on the rolled surface is 10 ⁇ m or more, the grain size is relatively large before the pressure heat treatment, the driving force for recrystallization during the pressure heat treatment is small, and the grains. It is possible to suppress the growth. Since the above-mentioned KAM value is 1.50 or less, the dislocation density is relatively low, and the accumulated strain energy is small, the driving force for recrystallization during pressure heat treatment is small and grain growth is suppressed. It becomes possible to do.
  • S which is a kind of crystal grain growth inhibitory element, segregates at the grain boundaries, and after pressure heat treatment. It is possible to surely suppress the coarsening and non-uniformity of the crystal grains in. In addition, hot workability can be ensured.
  • the elements and crystal grain growth of these element A groups it is possible to suppress the formation of a compound by reacting with the inhibitory elements S, Se, Te and the like, and it is possible to fully exert the action of the crystal grain growth inhibitory element. Therefore, it is possible to reliably suppress the coarsening and non-uniformity of the crystal grains after the pressure heat treatment.
  • the ratio d max / d ave of the maximum crystal grain size d max and the average crystal grain size d ave after the pressure heat treatment is 20.0 or less, it is added. It is possible to reliably suppress the non-uniformity of crystal grains even after the pressure heat treatment, and further suppress the occurrence of poor appearance.
  • the Vickers hardness is 150 HV or less, it is sufficiently soft and the characteristics as a pure copper plate are secured, so that it is particularly suitable as a material for electric / electronic parts for high current applications.
  • the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the present invention.
  • an example of a method for manufacturing a pure copper plate has been described, but the method for manufacturing a pure copper plate is not limited to the one described in the embodiment, and an existing manufacturing method is appropriately selected. It may be manufactured.
  • a Cu-1 mass% mother alloy of various elements prepared by using a copper raw material having a purity of 99.999 mass% or more and the copper raw material and various elements having a purity of 99 mass% or more was prepared.
  • the above-mentioned copper raw material was charged into a high-purity graphite crucible and melted at high frequency in an atmosphere furnace having an Ar gas atmosphere.
  • Cu-1 mass% mother alloys of the above-mentioned various elements were added to the obtained molten copper to prepare a predetermined component composition.
  • the obtained molten copper was poured into a mold to produce an ingot.
  • the size of the ingot was about 50 mm in thickness ⁇ about 60 mm in width ⁇ about 150 to 200 mm in length.
  • the obtained ingot was heated in an Ar gas atmosphere for 1 hour under the temperature conditions shown in Tables 1 and 2 and hot-rolled to a thickness of 25 mm.
  • the copper material after hot rolling was cut and surface grinding was performed to remove the oxide film on the surface.
  • the thickness of the copper material to be subjected to the intermediate rolling is adjusted so that the final thickness is as shown in Tables 1 and 2 in consideration of the rolling ratios of the subsequent hot rolling, intermediate rolling and temper rolling. bottom.
  • the copper material whose thickness was adjusted as described above was subjected to intermediate rolling under the conditions shown in Tables 1 and 2 and water-cooled. Next, the copper material after the intermediate rolling was subjected to a recrystallization heat treatment under the conditions shown in Tables 1 and 2. Then, the copper material after the recrystallization heat treatment was subjected to temper rolling under the conditions shown in Tables 1 and 2, and a strip material for character evaluation having a thickness of 60 mm and a width shown in Tables 1 and 2 was produced.
  • composition analysis A measurement sample was taken from the obtained ingot, S was measured by an infrared absorption method, and other elements were measured using a glow discharge mass spectrometer (GD-MS). The measurement was performed at two locations, the center of the sample and the end in the width direction, and the one with the higher content was taken as the content of the sample. The measurement results are shown in Tables 1 and 2.
  • the length of the ear crack is the length of the ear crack from the widthwise end portion of the rolled material to the widthwise central portion.
  • the Vickers hardness was measured with a test load of 0.98 N in accordance with the micro Vickers hardness test method specified in JIS Z 2244. The measurement position was the rolled surface of the characteristic evaluation test piece. The evaluation results are shown in Tables 3 and 4.
  • test piece having a width of 10 mm and a length of 60 mm was sampled from the strip material for character evaluation, and the electrical resistance was determined by the 4-terminal method. In addition, the dimensions of the test piece were measured using a micrometer, and the volume of the test piece was calculated. Then, the conductivity was calculated from the measured electric resistance value and volume. The evaluation results are shown in Tables 3 and 4. The test piece was collected so that its longitudinal direction was parallel to the rolling direction of the strip material for character evaluation.
  • a 20 mm ⁇ 20 mm sample was cut out from the obtained characteristic evaluation strip, and a SEM-EBSD (Electron Backscatter Diffractaction Patterns) measuring device (Quanta FEG 450 manufactured by FEI, EDAX / TSL (currently AMETEK) OIM Data C.
  • the average crystal grain size was measured by.
  • the rolled surface was mechanically polished using water-resistant abrasive paper and diamond abrasive grains, and then finish-polished using a colloidal silica solution.
  • each measurement point (pixel) within the measurement range on the sample surface is irradiated with an electron beam, and the orientation difference between adjacent measurement points is determined by orientation analysis by backscattered electron beam diffraction.
  • the area between the measurement points at 15 ° or more was defined as a large-angle grain boundary, and the area below 15 ° was defined as a small-angle grain boundary.
  • KAM value The sample used above was used as an EBSD measuring device (Quanta FEG 450 manufactured by FEI, EDAX / TSL (currently AMETEK) OIM Data Collection) and analysis software (EDAX / TSL (currently AMETEK) OIM Data Analysis ver. According to 7.3.1), the orientation difference of each crystal grain is different except for the measurement points where the acceleration voltage of the electron beam is 15 kV, the measurement interval is 40,000 ⁇ m 2 or more at the measurement interval of 5 ⁇ m, and the CI value is 0.1 or less.
  • the KAM values of all the analyzed pixels were obtained by regarding the boundary where the orientation difference between adjacent pixels was 5 ° or more as the crystal grain boundary, and the average value was obtained. The evaluation results are shown in Tables 3 and 4.
  • a sample was cut out of the 40 mm ⁇ 40 mm from the above-described characteristics evaluation elongated member, two of the ceramic substrate (material: Si 3 N 4, 50mm ⁇ 50mm ⁇ thickness 1mm) in nipping the above samples (pure copper), pressurized
  • the heat treatment was performed with a load of 0.60 MPa applied.
  • the heat treatment was carried out by putting the ceramic substrate into a furnace at 850 ° C., confirming that the material temperature had reached 850 ° C. with a thermocouple, holding the material for 90 minutes, and then cooling the furnace until the temperature reached room temperature after the heating was completed. ..
  • the rolled surface is first mechanically polished with water-resistant abrasive paper and diamond abrasive grains, and then a colloidal silica solution is applied. Finish polishing was performed using. After that, etching is performed, and in accordance with the cutting method of JIS H 0501, five line segments of predetermined length and width are drawn, the number of crystal grains to be completely cut is counted, and the average value of the cutting length is calculated. The average crystal grain size was used. The evaluation results are shown in Tables 3 and 4.
  • Comparative Example 1 the P content was 160 mass ppm, which was larger than the range of the present invention, and the processability was deteriorated. Further, after the pressure heat treatment, the average crystal grain size was coarsened to 500 ⁇ m or more, and the variation in grain size became large. In Comparative Example 2, the total content of Ag and Fe was 0.2 mass ppm, which was smaller than the range of the present invention, the crystal grains became coarse after the pressure heat treatment, and the variation in particle size became large. In Comparative Example 3, since the processing rate of temper rolling was 62%, which was higher than the preferable range of the present invention, the KAM value was 2.12, which was larger than the range of the present invention. The variation in diameter also increased.
  • Example 1-28 of the present invention the average crystal grain size after the heat treatment was small, and the variation in particle size was also small. From the above, according to the example of the present invention, it is possible to provide a pure copper plate having excellent hot workability and capable of suppressing coarsening and non-uniformity of crystal grains even after pressure heat treatment. It was confirmed that.

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023176045A1 (ja) * 2022-03-14 2023-09-21 Ｄｏｗａメタルテック株式会社 銅－セラミックス接合基板およびその製造方法
WO2024024899A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
WO2024024909A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
WO2024024898A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019081A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019080A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019079A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7342957B2 (ja) * 2020-03-06 2023-09-12 三菱マテリアル株式会社 純銅板、銅／セラミックス接合体、絶縁回路基板
PL449757A1 (pl) * 2024-09-09 2026-03-16 Sieć Badawcza Łukasiewicz - Instytut Metali Nieżelaznych Stop Cu-Mg-Te do zastosowań zwłaszcza w przemyśle elektrycznym i elektrotechnicznym
CN120519734A (zh) * 2025-06-30 2025-08-22 宁波金田电材有限公司 一种高耐热高导电铜合金及其制备方法与应用

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282797A (ja) * 1986-05-29 1987-12-08 Dowa Mining Co Ltd セラミツクス−銅直接接合用銅材
JPH062058A (ja) 1992-06-23 1994-01-11 Furukawa Electric Co Ltd:The 結晶粒成長抑制無酸素銅
JP2000212660A (ja) * 1999-01-18 2000-08-02 Nippon Mining & Metals Co Ltd フレキシブルプリント回路基板用圧延銅箔およびその製造方法
WO2010038642A1 (ja) * 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜
JP2017071832A (ja) * 2015-10-08 2017-04-13 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP2019183256A (ja) * 2018-04-09 2019-10-24 三菱マテリアル株式会社 スパッタリングターゲット材
JP2020038770A (ja) 2018-09-03 2020-03-12 国立大学法人東京工業大学 二次電池及びそれを用いた充放電方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201139707Y (zh) * 2007-12-29 2008-10-29 张爱华 婴幼儿监护治疗床
CN102165080B (zh) * 2009-01-09 2013-08-21 三菱伸铜株式会社 高强度高导电铜合金轧制板及其制造方法
JP2010282797A (ja) 2009-06-03 2010-12-16 Honda Motor Co Ltd 燃料電池システムの制御方法
JP4516154B1 (ja) * 2009-12-23 2010-08-04 三菱伸銅株式会社 Ｃｕ−Ｍｇ−Ｐ系銅合金条材及びその製造方法
JP4792116B2 (ja) 2010-02-09 2011-10-12 三菱伸銅株式会社 純銅板の製造方法及び純銅板
JP4869415B2 (ja) 2010-02-09 2012-02-08 三菱伸銅株式会社 純銅板の製造方法及び純銅板
JP2016020516A (ja) 2012-09-27 2016-02-04 株式会社日立製作所 回転電機
JP6464742B2 (ja) * 2014-12-26 2019-02-06 三菱マテリアル株式会社 電子・電気機器用銅合金、電子・電気機器用銅合金薄板、電子・電気機器用部品、端子及びバスバー
WO2017033694A1 (ja) 2015-08-24 2017-03-02 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP6680041B2 (ja) 2016-03-30 2020-04-15 三菱マテリアル株式会社 電子・電気機器用銅合金、電子・電気機器用銅合金塑性加工材、電子・電気機器用部品、端子、及び、バスバー
JP6744174B2 (ja) 2016-08-12 2020-08-19 株式会社Ｓｈカッパープロダクツ 無酸素銅板、無酸素銅板の製造方法およびセラミック配線基板
KR102326618B1 (ko) * 2017-03-31 2021-11-16 후루카와 덴키 고교 가부시키가이샤 구리판 부착 절연 기판용 구리판재 및 그 제조 방법
CN110284025B (zh) * 2019-07-29 2020-12-25 江西省鹰潭铜产业工程技术研究中心 一种铝青铜材料及其制备方法
EP4067517A4 (en) 2019-11-29 2023-11-22 Mitsubishi Materials Corporation Copper alloy, copper alloy plastic-processed material, component for electronic and electric devices, terminal, bus bar, and heat dissipation substrate
KR102927900B1 (ko) * 2020-03-06 2026-02-13 미쓰비시 마테리알 가부시키가이샤 순구리판
JP7342957B2 (ja) * 2020-03-06 2023-09-12 三菱マテリアル株式会社 純銅板、銅／セラミックス接合体、絶縁回路基板

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282797A (ja) * 1986-05-29 1987-12-08 Dowa Mining Co Ltd セラミツクス−銅直接接合用銅材
JPH062058A (ja) 1992-06-23 1994-01-11 Furukawa Electric Co Ltd:The 結晶粒成長抑制無酸素銅
JP2000212660A (ja) * 1999-01-18 2000-08-02 Nippon Mining & Metals Co Ltd フレキシブルプリント回路基板用圧延銅箔およびその製造方法
WO2010038642A1 (ja) * 2008-09-30 2010-04-08 日鉱金属株式会社 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜
JP2017071832A (ja) * 2015-10-08 2017-04-13 三菱マテリアル株式会社 高純度銅スパッタリングターゲット材
JP2019183256A (ja) * 2018-04-09 2019-10-24 三菱マテリアル株式会社 スパッタリングターゲット材
JP2020038770A (ja) 2018-09-03 2020-03-12 国立大学法人東京工業大学 二次電池及びそれを用いた充放電方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4116448A4

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023176045A1 (ja) * 2022-03-14 2023-09-21 Ｄｏｗａメタルテック株式会社 銅－セラミックス接合基板およびその製造方法
JP2023134291A (ja) * 2022-03-14 2023-09-27 Ｄｏｗａメタルテック株式会社 銅－セラミックス接合基板およびその製造方法
CN118742527A (zh) * 2022-03-14 2024-10-01 同和金属技术有限公司 铜-陶瓷接合基板及其制造方法
WO2024024898A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP7473066B2 (ja) 2022-07-29 2024-04-23 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019081A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019080A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP2024019079A (ja) * 2022-07-29 2024-02-08 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP7444324B2 (ja) 2022-07-29 2024-03-06 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
JP7444323B2 (ja) 2022-07-29 2024-03-06 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
WO2024024909A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
KR20240132097A (ko) * 2022-07-29 2024-09-02 미쓰비시 마테리알 가부시키가이샤 순구리재, 절연 기판, 전자 디바이스
WO2024024899A1 (ja) * 2022-07-29 2024-02-01 三菱マテリアル株式会社 純銅材、絶縁基板、電子デバイス
US12264390B1 (en) 2022-07-29 2025-04-01 Mitsubishi Materials Corporation Pure copper material, insulating substrate, and electronic device
KR102800568B1 (ko) 2022-07-29 2025-04-24 미쓰비시 마테리알 가부시키가이샤 순구리재, 절연 기판, 전자 디바이스
US12286698B2 (en) 2022-07-29 2025-04-29 Mitsubishi Materials Corporation Pure copper material, insulating substrate, and electronic device
EP4467675A4 (en) * 2022-07-29 2025-12-24 Mitsubishi Materials Corp PURE COPPER MATERIAL, INSULATING SUBSTRATE, AND ELECTRONIC DEVICE

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