WO2021056868A1 - 薄膜的制备方法及显示装置的制备方法 - Google Patents

薄膜的制备方法及显示装置的制备方法 Download PDF

Info

Publication number
WO2021056868A1
WO2021056868A1 PCT/CN2019/126689 CN2019126689W WO2021056868A1 WO 2021056868 A1 WO2021056868 A1 WO 2021056868A1 CN 2019126689 W CN2019126689 W CN 2019126689W WO 2021056868 A1 WO2021056868 A1 WO 2021056868A1
Authority
WO
WIPO (PCT)
Prior art keywords
forming
layer
gas precursor
inorganic layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/126689
Other languages
English (en)
French (fr)
Inventor
李亚洲
王杲祯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/640,270 priority Critical patent/US11342502B2/en
Publication of WO2021056868A1 publication Critical patent/WO2021056868A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Definitions

  • the invention relates to the field of display technology, in particular to a method for preparing a thin film and a method for preparing a display device.
  • ALD atomic layer Deposition
  • the specific reaction process is to continuously introduce at least two gas phase precursors on the substrate in a heated reactor.
  • the chemical adsorption process will automatically terminate when the surface is saturated.
  • the deposited materials include: oxides, nitrides, Fluoride, metal, carbide, composite structure, sulfide, nano-thin layer, etc.
  • the method of controlling the edge shadow is to use a mask.
  • the ALD film forming technology is a monoatomic film on the surface of the substrate, the method of masking cannot control the film formation. At the boundary, single atoms can easily pass through the gap between the mask and the substrate, causing the film boundary to be epitaxial.
  • the present invention provides a method for preparing a thin film and a method for preparing a display device.
  • a gas precursor repellent layer is formed in the non-film-forming area, so that the film formed by atomic deposition only forms the film in the film-forming area to prevent Film boundary epitaxy.
  • the present invention provides a thin film preparation method, including the following steps: providing a substrate with a film-forming area and a non-film-forming area surrounding the film-forming area; forming a gas The precursor repelling layer is in the non-film-forming area; the gas precursor is deposited on the film-forming area by atomic deposition to form a thin film.
  • the step of forming a thin film includes: depositing a first gas precursor on the surface of the substrate in the film formation zone by an atomic deposition method until it is saturated; and depositing a second gas precursor by an atomic deposition method It is deposited on the first gas precursor in the film forming zone and reacts with the first gas precursor to form a thin film after drying.
  • the material used for the gas precursor repellent layer is metal or metal oxide.
  • the method further includes cutting off the gas precursor repellent layer in the non-film forming region.
  • the present invention provides a method for manufacturing a display device, including the following steps: providing a display screen having a display area and a non-display area surrounding the display area; forming a packaging structure The layer is on the display screen and covers the display area, and the step of forming the packaging structure layer includes forming at least one inorganic layer by the thin film preparation method of claim 1.
  • the step of forming the packaging structure layer includes: forming a first inorganic layer on the display screen and covering the display area; and forming a second inorganic layer by the thin film preparation method.
  • the inorganic layer is on the first inorganic layer, including on the display screen in the non-display area, and the gas precursor repellent layer is formed around the first inorganic layer;
  • the bulk is deposited on the first inorganic layer to form the second inorganic layer.
  • a first inorganic layer is formed by chemical vapor deposition, the first inorganic layer has pores or grooves on its surface; in the step of forming the second inorganic layer, The gas precursor is partially filled in the groove or the pore.
  • the method further includes forming an organic layer on the second inorganic layer in the display area by an inkjet printing method.
  • the method further includes forming a third inorganic layer on the organic layer by a chemical weather deposition method and covering the second inorganic layer and the gas precursor repellent layer.
  • the method further includes cutting along the junction of the gas precursor repelling layer and the second inorganic layer to remove the gas precursor repelling layer and the all in the non-display area.
  • the gas precursor repels the inorganic layer on the periphery of the layer.
  • the method for preparing the film and the method for preparing the display device of the present invention form a gas precursor repellent layer in the non-film-forming area, which can effectively achieve the effect of limiting the edge of the film, and finally eliminate the boundary epitaxial problem caused by the atomic deposition method. No mask is required, which saves the process and cost of making the mask; in the packaging structure layer of the display device, the preparation method of the thin film is used to prepare the inorganic film, which can effectively control the boundary of the inorganic film and further reduce the frame width , Improve the effective area of the display area.
  • Figure 1 is a flow chart of the steps of a method for preparing a thin film according to an embodiment of the present invention.
  • Fig. 2 is a step flow chart of the steps of forming a thin film according to an embodiment of the present invention.
  • Fig. 3 is a structural diagram after a thin film is formed on a substrate according to an embodiment of the present invention.
  • FIG. 4 is a flow chart of the steps of the manufacturing method of the display device according to the embodiment of the present invention.
  • FIG. 5 is a flowchart of steps for forming a packaging structure layer according to an embodiment of the present invention.
  • FIG. 6 is a structural diagram of a display device after forming a third inorganic layer according to an embodiment of the present invention.
  • FIG. 7 is a structural diagram of the display device after removing the gas precursor repellent layer according to the embodiment of the present invention.
  • Packaging structure layer 102 display area;
  • the method for preparing the film of the present invention includes step S1)-step S4).
  • Step S1) Provide a substrate 1 with a film forming area 100 and a non-film forming area 101 surrounding the film forming area 100 on the substrate 1.
  • the surface of the substrate 1 generally has an active agent.
  • Step S2) forming a gas precursor repellent layer 2 in the non-film forming area 101.
  • the selected material of the gas precursor repellent layer 2 is metal or metal oxide.
  • Step S3) A gas precursor is deposited on the film forming area 100 to form a thin film 3 by an atomic deposition method.
  • steps S31)-S32) are included, as shown in FIG. 2.
  • Step S31) Depositing a first gas precursor on the surface of the substrate 1 of the film-forming region 100 until saturation by an atomic deposition method.
  • Saturation refers to the reaction of the first gas precursor and the active agent to a saturated state, After the first gas precursor completely reacts with the active agent, intermediates and by-products are generated. The intermediates are adsorbed on the surface of the substrate 1, and then the excess first gas precursors are purged by an inert gas And the by-products.
  • Step S32) A second gas precursor is deposited on the first gas precursor in the film-forming region 100 and reacts with the first gas precursor by an atomic deposition method, and the second gas precursor and the first gas precursor are reacted with each other. After the intermediates are completely reacted, a semi-finished product and by-products of the film 3 are generated, and then the excess second gas precursor and the by-products are purged by an inert gas, and the semi-finished product of the film 3 is dried to form a film 3.
  • the materials of the first gas precursor and the second gas precursor can be selected from oxides, nitrides, fluorides, carbides, sulfides, chlorides, and the like.
  • the first gas precursor can be titanium chloride
  • the second gas precursor can be water
  • the formed film 3 is titanium dioxide.
  • steps S31) to step S32) can be cycled.
  • the number of cycles from step S31) to step S32) is based on the number of cycles of the film 3
  • the thickness setting will not be repeated here.
  • the reacted first gas precursor and the second gas precursor are different from the gas precursor repelling layer 2 due to the material properties, and the first gas precursor and the second gas precursor cannot be in the
  • the gas precursor repellent layer 2 is adsorbed and deposited, and can only be deposited and formed in the film-forming zone 100.
  • the film 3 preparation method of the present invention can effectively achieve the effect of limiting the edge of the film 3, and finally eliminate the film formation caused by the atomic deposition method.
  • the thin film 3 formed on the substrate 1 is shown in FIG. 3.
  • the present invention provides a method for manufacturing the display device 10, including step S100) to step S200).
  • a display screen 11 is provided.
  • the display screen 11 has a display area 102 and a non-display area 103 surrounding the display area 102.
  • step S200 forming an encapsulation structure layer 12 on the display screen 11 and covering the display area 102, and the step of forming the encapsulation structure layer 12 includes forming at least one inorganic layer through the thin film 3 preparation method.
  • the step of forming the packaging structure layer 12 includes step S201) to step S205), as shown in FIG. 5.
  • first inorganic layer 121 on the display screen 11 and covering the display area 102; specifically, the first inorganic layer 121 is formed by a chemical weather deposition method, and the first inorganic layer 121 is formed by a chemical weather deposition method.
  • the inorganic layer 121 has pores or grooves on its surface, that is, the surface of the first inorganic layer 121 is uneven.
  • the material used for the first inorganic layer 121 can be selected from at least one of nitride, oxide, and oxynitride, such as silicon nitride, silicon oxide, aluminum nitride, titanium oxide, and the like.
  • the step of forming the second inorganic layer 122 includes forming the gas precursor repellent layer 2 around the first inorganic layer 121 on the display screen 11 in the non-display area 103.
  • the material of the gas precursor repelling layer 2 is metal or its oxide, such as aluminum, silver or aluminum oxide, silver oxide, etc., see step S2). Since the gas precursor has a certain fluidity, in order to limit the gas precursor In this embodiment, the height of the gas precursor repelling layer 2 is higher than the height of the first inorganic layer 121.
  • the gas precursor is deposited on the first inorganic layer 121 by atomic deposition to form the second inorganic layer 122, see step S3), and the surface of the formed second inorganic layer 122 and the gas precursor The surface of the volume repellent layer 2 is flush. Due to the uneven surface of the first inorganic layer 121, in the step of forming the second inorganic layer 122, the gas precursor is partially filled in the groove or the pore, so that the first inorganic layer The surface of 121 is smoother and smoother.
  • the method further includes forming an organic layer 123 on the second inorganic layer 122 of the display area 102 by an inkjet printing method.
  • the material used for the organic layer 123 includes one or a combination of polyvinyl alcohol, urethane acrylate polymer, and polyimide resin. Since the gas precursor is partially filled in the groove or the pore, the surface of the first inorganic layer 121 is smoother and flatter, which is beneficial to improve the leveling of the organic layer 123.
  • the method further includes forming a third inorganic layer 124 on the organic layer 123 by chemical vapor deposition and covering the second inorganic layer 122 and the gas precursor repellent layer 2 .
  • the material used for the second inorganic layer 122 can be selected from at least one of nitride, oxide, and oxynitride, such as silicon nitride, silicon oxide, aluminum nitride, titanium oxide, and the like.
  • the third inorganic layer 124 has the functions of protecting the organic layer 123 and further blocking water and oxygen.
  • the formed packaging structure layer 12 is shown in FIG. 6.
  • step of forming the third inorganic layer 124 it further includes cutting along the junction of the gas precursor repelling layer 2 and the second inorganic layer 122 to remove the gas in the non-display area 103
  • the precursor repelling layer 2 and the inorganic layer on the periphery of the gas precursor repelling layer 2 are shown in FIG. 7.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种薄膜的制备方法及显示装置的制备方法，薄膜的制备方法，包括以下步骤：提供一基板，所述基板上具有成膜区和围绕所述成膜区的非成膜区（S1）；形成气体前驱体排斥层于所述非成膜区（S2）；通过原子沉积法将气体前驱体沉积于所述成膜区形成薄膜（S3）。在非成膜区形成气体前驱体排斥层，能够有效达到限定薄膜边缘的效果，最终消除原子沉积法成膜时产生的边界外延问题。

Description

薄膜的制备方法及显示装置的制备方法 技术领域
本发明涉及显示技术领域，具体为一种薄膜的制备方法及显示装置的制备方法。
 背景技术
ALD（原子层沉积）一种基于有序、表面自饱和反应的化学气相沉积方法，它可以实现将物质以单原子膜的形式一层一层的镀在基板表面上。具体反应过程是在一个加热的反应器中的衬底上连续引入至少两种气相前驱体，化学吸附的过程直至表面饱和时就会自动终止，目前可沉积的材料包括：氧化物，氮化物，氟化物，金属，碳化物，复合结构，硫化物，纳米薄层等。ALD成膜技术优点是可以简单精确地控制成膜厚度，成膜均匀性好，可在低温下成膜，广泛适用于各种基底，因此在OLED显示薄膜封装中有良好的应用前景。
传统的气相沉积成膜工艺中，控制边缘阴影的方法是使用掩膜板，但是由于ALD成膜技术是以单原子膜的形式镀在基板表面，所以用掩膜板遮挡的方法无法控制成膜边界，单原子能轻易穿过掩膜板与基板的间距，造成薄膜边界外延。
 技术问题
为解决上述技术问题：本发明提供一种薄膜的制备方法及显示装置的制备方法，在非成膜区形成气体前驱体排斥层，使得原子沉积形成的薄膜仅在成膜区形成薄膜，以防止薄膜边界外延。
 技术解决方案
解决上述问题的技术方案是：本发明提供一种薄的膜制备方法，包括以下步骤：提供一基板，所述基板上具有成膜区和围绕所述成膜区的非成膜区；形成气体前驱体排斥层于所述非成膜区；通过原子沉积法将气体前驱体沉积于所述成膜区形成薄膜。
在本发明一实施例中，在形成薄膜步骤中，包括：通过原子沉积法将第一气体前驱体沉积于所述成膜区的基板的表面直至饱和；通过原子沉积法将第二气体前驱体沉积于所述成膜区的所述第一气体前驱体上并与所述第一气体前驱体反应，干燥后形成薄膜。
在本发明一实施例中，所述气体前驱体排斥层所用材料为金属或金属氧化物。
在本发明一实施例中，在形成薄膜步骤后还包括切割去除非所述成膜区的所述气体前驱体排斥层。
在本发明一实施例中，本发明提供了一种显示装置的制备方法，包括以下步骤：提供一显示屏，所述显示屏具有显示区和围绕所述显示区的非显示区；形成封装结构层于所述显示屏上并覆盖所述显示区，形成封装结构层步骤中包括通过权利要求1所述的薄膜制备方法形成至少一层无机层。
在本发明一实施例中，在所述形成封装结构层步骤中，包括：形成一第一无机层于所述显示屏上并覆盖所述显示区；通过所述的薄膜制备方法形成一第二无机层于所述第一无机层上，包括在所述非显示区的所述显示屏上，围绕所述第一无机层形成所述气体前驱体排斥层；通过原子沉积法将所述气体前驱体沉积于所述第一无机层上形成所述第二无机层。
在所述形成第一无机层步骤中，通过化学气象沉积法形成第一无机层，所述第一无机层中具有孔隙或其表面具有凹槽；在形成所述第二无机层步骤中，所述气体前驱体部分填充于所述凹槽或所述孔隙中。
在所述形成第二无机层步骤之后，还包括通过喷墨打印法形成有机层于所述显示区的所述第二无机层上。
在所述形成有机层步骤之后，还包括通过化学气象沉积法形成第三无机层于所述有机层上并覆盖所述第二无机层和所述气体前驱体排斥层。
在形成所述第三无机层步骤之后，还包括沿所述气体前驱体排斥层和所述第二无机层的连接处切割，去除所述非显示区中的所述气体前驱体排斥层和所述气体前驱体排斥层外周的无机层。
 有益效果
本发明的薄膜的制备方法及显示装置的制备方法，在非成膜区形成气体前驱体排斥层，能够有效达到限定薄膜边缘的效果，最终消除原子沉积法成膜时产生的边界外延问题，而且不需要掩膜板，节省工艺和制作掩膜板的成本；在显示装置的封装结构层中，应用薄膜的制备方法来制备无机膜层，能够有效的控制无机膜层的边界，进一步减少边框宽度，提高显示区的有效面积。
 附图说明
下面结合附图和实施例对本发明作进一步解释。
图1是本发明实施例的薄膜的制备方法步骤流程图。
图2是本发明实施例的形成薄膜步骤的步骤流程图。
图3是本发明实施例的基板上形成薄膜后的结构图。
图4是本发明实施例的显示装置的制备方法步骤流程图。
图5是本发明实施例的形成封装结构层的步骤流程图。
图6是本发明实施例的形成第三无机层后的显示装置的结构图。
图7是本发明实施例的去除气体前驱体排斥层后的显示装置的结构图。
附图标记：
1基板；                      2气体前驱体排斥层；
3薄膜；                      100成膜区；
101非成膜区；
10显示装置；                 11显示屏；
12封装结构层；               102显示区；
103非显示区；                121第一无机层；
122第二无机层；               123有机层；
124第三无机层。
 本发明的实施方式
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图1所示，在一实施例中，本发明的薄膜的制备方法，包括步骤S1）-步骤S4）。
步骤S1）提供一基板1，所述基板1上具有成膜区100和围绕所述成膜区100的非成膜区101。在所述成膜区100，所述基板1的表面一般具有活性剂。
步骤S2）形成气体前驱体排斥层2于所述非成膜区101。本实施例中，所述气体前驱体排斥层2选用的材料为金属或其或金属氧化物。
步骤S3）通过原子沉积法将气体前驱体沉积于所述成膜区100形成薄膜3。在形成薄膜3步骤中，包括以下步骤S31）-步骤S32），如图2所示。
步骤S31）通过原子沉积法将第一气体前驱体沉积于所述成膜区100的基板1的表面直至饱和，饱和是指所述第一气体前驱体与所述活性剂的反应直至饱和状态，所述第一气体前驱体与所述活性剂的完全反应后生成中间体和副产物，所述中间体在吸附在基板1的表面，之后通过惰性气体吹扫多余的所述第一气体前驱体及所述副产物。
步骤S32）通过原子沉积法将第二气体前驱体沉积于所述成膜区100的所述第一气体前驱体上并与所述第一气体前驱体反应，所述第二气体前驱体与所述中间体完全反应后生成薄膜3半成品和副产物，之后通过惰性气体吹扫多余的所述第二气体前驱体及所述副产物，所述薄膜3半成品干燥后形成薄膜3。所述第一气体前驱体和所述第二气体前驱体的材料可以选择氧化物、氮化物、氟化物、碳化物、硫化物、氯化物等。如所述第一气体前驱体可以选择氯化钛，所述第二气体前驱体可以选择水，形成的薄膜3为二氧化钛。
当然，根据所述薄膜3的厚度需求，在本实施例中的步骤S32）之后，还可以循环进行步骤S31）至步骤S32），步骤S31）至步骤S32）的循环次数根据所述薄膜3的厚度设定，对此不再赘述。反应的所述第一气体前驱体和所述第二气体前驱体因材料性质与所述气体前驱体排斥层2不同，所述第一气体前驱体和所述第二气体前驱体不能在所述气体前驱体排斥层2处吸附沉积，仅能够在成膜区100沉积成膜，通过本发明的薄膜3制备方法，能够有效达到限定薄膜3边缘的效果，最终消除原子沉积法成膜时产生的边界外延问题。形成在基板1上的薄膜3如图3所示。
S4）在形成薄膜3步骤后还包括切割去除非所述成膜区100的所述气体前驱体排斥层2。切割时，可用激光沿着所述气体前驱体排斥层2与所述薄膜3是相接处进行切割，以去除所述气体前驱体排斥层2。
如图4所示，本发明提供了一种显示装置10的制备方法，包括步骤S100）-步骤S200）。
S100）提供一显示屏11，所述显示屏11具有显示区102和围绕所述显示区102的非显示区103。
S200）形成封装结构层12于所述显示屏11上并覆盖所述显示区102，形成封装结构层12步骤中包括通过所述的薄膜3制备方法形成至少一层无机层。具体的讲，所述形成封装结构层12步骤包括步骤S201）-步骤S205），如图5所示。
S201）形成一第一无机层121于所述显示屏11上并覆盖所述显示区102；具体的讲，通过化学气象沉积法形成第一无机层121，化学气象沉积法形成的所述第一无机层121中具有孔隙或其表面具有凹槽，即所述第一无机层121表面不平整。所述第一无机层121所用材料可以选择氮化物、氧化物、氮氧化物中的至少一种，如氮化硅、氧化硅、氮化铝、氧化钛等。
S202）通过所述的薄膜3制备方法形成一第二无机层122于所述第一无机层121上。在形成第二无机层122步骤中，包括在所述非显示区103的所述显示屏11上，围绕所述第一无机层121形成所述气体前驱体排斥层2，本实施例中，所述气体前驱体排斥层2的材料为金属或其氧化物，如铝、银或氧化铝、氧化银等，参见步骤S2），由于气体前驱体具有一定的流动性，为了限定所述气体前驱体的流动，本实施例中，所述气体前驱体排斥层2的高度高于所述第一无机层121的高度。通过原子沉积法将所述气体前驱体沉积于所述第一无机层121上形成所述第二无机层122，参见步骤S3），形成的所述第二无机层122的表面与所述气体前驱体排斥层2的表面平齐。由于所述第一无机层121表面不平整，在形成所述第二无机层122步骤中，所述气体前驱体部分填充于所述凹槽或所述孔隙中，以使所述第一无机层121表面更加光滑、平整。
S203）在所述形成第二无机层122步骤之后，还包括通过喷墨打印法形成有机层123于所述显示区102的所述第二无机层122上。所述有机层123所用材料包括聚乙烯醇、聚氨酯丙烯酸酯聚合物、聚酰亚胺树脂中一种或几种的组合。由于所述气体前驱体部分填充于所述凹槽或所述孔隙中，使所述第一无机层121表面更加光滑、平整，这样有利于提高所述有机层123的流平性。
S204）在所述形成有机层123步骤之后，还包括通过化学气象沉积法形成第三无机层124于所述有机层123上并覆盖所述第二无机层122和所述气体前驱体排斥层2。所述第二无机层122所用材料可以选择氮化物、氧化物、氮氧化物中的至少一种，如氮化硅、氧化硅、氮化铝、氧化钛等。所述第三无机层124具有保护所述有机层123和进一步阻隔水氧的作用。形成的封装结构层12如图6所示。
S205）在形成所述第三无机层124步骤之后，还包括沿所述气体前驱体排斥层2和所述第二无机层122的连接处切割，去除所述非显示区103中的所述气体前驱体排斥层2和所述气体前驱体排斥层2外周的无机层，参见图7所示。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
可以理解的是，对本领域普通技术人员来说，可以根据本申请的技术方案及其发明构思加以等同替换或改变，而所有这些改变或替换都应属于本申请所附的权利要求的保护范围。

Claims (10)

  1. 一种薄膜的制备方法，其包括以下步骤：
    提供一基板，所述基板上具有成膜区和围绕所述成膜区的非成膜区；
    形成气体前驱体排斥层于所述非成膜区；
    通过原子沉积法将气体前驱体沉积于所述成膜区形成薄膜。
  2. 根据权利要求1所述的薄膜的制备方法，其中，在形成薄膜步骤中，包括：
    通过原子沉积法将第一气体前驱体沉积于所述成膜区的基板的表面直至饱和；
    通过原子沉积法将第二气体前驱体沉积于所述成膜区的所述第一气体前驱体上并与所述第一气体前驱体反应，干燥后形成所述薄膜。
  3. 根据权利要求1所述的薄膜的制备方法，其中，所述气体前驱体排斥层所用材料为金属或金属氧化物。
  4. 根据权利要求1所述的薄膜的制备方法，其中，在形成薄膜步骤后还包括切割去除非所述成膜区的所述气体前驱体排斥层。
  5. 一种显示装置的制备方法，其包括以下步骤：
    提供一显示屏，所述显示屏具有显示区和围绕所述显示区的非显示区；
    形成封装结构层于所述显示屏上并覆盖所述显示区，形成封装结构层步骤中包括通过权利要求1所述的薄膜的制备方法形成至少一层无机层。
  6. 根据权利要求5所述的显示装置的制备方法，其中，在所述形成封装结构层步骤中，包括：
    形成一第一无机层于所述显示屏上并覆盖所述显示区；
    形成一第二无机层于所述第一无机层上，包括：
    在所述非显示区的所述显示屏上，围绕所述第一无机层形成所述气体前驱体排斥层；
    通过原子沉积法将所述气体前驱体沉积于所述第一无机层上形成所述第二无机层。
  7. 根据权利要求6所述的显示装置的制备方法，其中，在所述形成第一无机层步骤中，通过化学气象沉积法形成第一无机层，所述第一无机层中具有孔隙或其表面具有凹槽；
    在形成所述第二无机层步骤中，所述气体前驱体部分填充于所述凹槽或所述孔隙中。
  8. 根据权利要求6所述的显示装置的制备方法，其中，在所述形成第二无机层步骤之后，还包括通过喷墨打印法形成有机层于所述显示区的所述第二无机层上。
  9. 根据权利要求8所述的显示装置的制备方法，其中，在所述形成有机层步骤之后，还包括通过化学气象沉积法形成第三无机层于所述有机层上并覆盖所述第二无机层和所述气体前驱体排斥层。
  10. 根据权利要求9所述的显示装置的制备方法，其中，在形成所述第三无机层步骤之后，还包括沿所述气体前驱体排斥层和所述第二无机层的连接处切割，去除所述非显示区中的所述气体前驱体排斥层和所述气体前驱体排斥层外周的无机层。
PCT/CN2019/126689 2019-09-25 2019-12-19 薄膜的制备方法及显示装置的制备方法 Ceased WO2021056868A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/640,270 US11342502B2 (en) 2019-09-25 2019-12-19 Method of preparing film and method of manufacturing display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910912511.3 2019-09-25
CN201910912511.3A CN110718647A (zh) 2019-09-25 2019-09-25 薄膜的制备方法及显示装置的制备方法

Publications (1)

Publication Number Publication Date
WO2021056868A1 true WO2021056868A1 (zh) 2021-04-01

Family

ID=69210892

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/126689 Ceased WO2021056868A1 (zh) 2019-09-25 2019-12-19 薄膜的制备方法及显示装置的制备方法

Country Status (3)

Country Link
US (1) US11342502B2 (zh)
CN (1) CN110718647A (zh)
WO (1) WO2021056868A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244327B (zh) 2020-01-23 2023-01-24 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403877A (zh) * 2017-06-19 2017-11-28 武汉华星光电半导体显示技术有限公司 Oled面板的封装方法
CN107835868A (zh) * 2015-06-17 2018-03-23 应用材料公司 在处理腔室中的气体控制
WO2019147312A1 (en) * 2017-10-06 2019-08-01 Board Of Regents, The University Of Texas System Metallic tin thin films as an etch mask

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004040943B4 (de) * 2004-08-24 2008-07-31 Qimonda Ag Verfahren zur selektiven Abscheidung einer Schicht mittels eines ALD-Verfahrens
KR101350411B1 (ko) * 2010-11-20 2014-01-16 엘지디스플레이 주식회사 멀티비젼용 어레이 기판 및 이를 구비한 액정표시장치
CN106711354A (zh) * 2016-12-02 2017-05-24 武汉华星光电技术有限公司 有机半导体器件的封装方法
JP7183187B2 (ja) * 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ
US10724139B2 (en) 2017-06-19 2020-07-28 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Encapsulation method for OLED Panel
CN107394059A (zh) * 2017-08-02 2017-11-24 京东方科技集团股份有限公司 Oled封装结构及其制造方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107835868A (zh) * 2015-06-17 2018-03-23 应用材料公司 在处理腔室中的气体控制
CN107403877A (zh) * 2017-06-19 2017-11-28 武汉华星光电半导体显示技术有限公司 Oled面板的封装方法
WO2019147312A1 (en) * 2017-10-06 2019-08-01 Board Of Regents, The University Of Texas System Metallic tin thin films as an etch mask

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SINGH JOSEPH A., THISSEN NICK F. W., KIM WOO-HEE, JOHNSON HANNAH, KESSELS WILHELMUS M. M., BOL AGEETH A., BENT STACEY F., MACKUS A: "Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, vol. 30, no. 3, 13 February 2018 (2018-02-13), pages 663 - 670, XP055794202, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.7b03818 *

Also Published As

Publication number Publication date
US20220045273A1 (en) 2022-02-10
CN110718647A (zh) 2020-01-21
US11342502B2 (en) 2022-05-24

Similar Documents

Publication Publication Date Title
CN105009319B (zh) 用于oled薄膜封装的含氟等离子体聚合的hmdso
CN107565066A (zh) Oled面板的制作方法及oled面板
EP3629393A1 (en) Oled device packaging assembly and packaging method, and display apparatus
US20200381676A1 (en) Package method of oled element and oled package structure
KR102595355B1 (ko) 증착 장치 및 그것을 이용한 증착 방법
KR102057176B1 (ko) 박막 캡슐화를 위한 ｎ2ｏ 희석 프로세스에 의한 배리어 막 성능의 개선
TW201310567A (zh) 用以沉積塗層於矩形基板上的遮罩結構、設備及方法
TW201442884A (zh) 積層體及阻氣薄膜
US20220213586A1 (en) Device and method for manufacturing thin film
US20200181773A1 (en) Coating nozzle, coating device and corresponding coating method
US20230165036A1 (en) Display panel and manufacturing method thereof
US10724139B2 (en) Encapsulation method for OLED Panel
WO2021056868A1 (zh) 薄膜的制备方法及显示装置的制备方法
US20190078208A1 (en) Method For Depositing Protection Film Of Light-Emitting Element
TWI652361B (zh) 邊緣排除遮罩，及使用其之用以在基板上沈積層的方法及設備
WO2020056941A1 (zh) Oled显示装置
US10707450B2 (en) OLED thin film packaging structure and method
CN107634154B (zh) 一种oled薄膜封装方法、结构及oled结构
CN108346677B (zh) 像素结构及其制作方法
KR20110096755A (ko) 유기 발광 표시 장치 및 이의 제조 방법
CN105679787A (zh) 有机发光二极管显示装置及其制造方法
CN108389882B (zh) 封装膜层及其制备方法及oled显示屏
US10777777B2 (en) Passivation film deposition method for light-emitting diode
RU2020102929A (ru) Гибкая барьерная мембрана и способ получения гибкой барьерной мембраны
US20190088901A1 (en) Encapsulation method for oled thin film, oled thin film encapsulation structure and oled structure

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19947360

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19947360

Country of ref document: EP

Kind code of ref document: A1