WO2021022188A1 - Chip-integrated titanium:sapphire laser - Google Patents

Chip-integrated titanium:sapphire laser Download PDF

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Publication number
WO2021022188A1
WO2021022188A1 PCT/US2020/044560 US2020044560W WO2021022188A1 WO 2021022188 A1 WO2021022188 A1 WO 2021022188A1 US 2020044560 W US2020044560 W US 2020044560W WO 2021022188 A1 WO2021022188 A1 WO 2021022188A1
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Prior art keywords
sapphire
substrate
resonator
laser
laser device
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PCT/US2020/044560
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French (fr)
Inventor
Geun Ho AHN
Daniil M. LUKIN
Melissa GUIDRY
Jelena Vuckovic
Kiyoul Yang
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The Board Of Trustees Of The Leland Stanford Junior University
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Application filed by The Board Of Trustees Of The Leland Stanford Junior University filed Critical The Board Of Trustees Of The Leland Stanford Junior University
Priority to CN202080054842.9A priority Critical patent/CN114175421A/en
Priority to US17/629,709 priority patent/US20220278497A1/en
Priority to EP20845888.5A priority patent/EP4005039B1/en
Publication of WO2021022188A1 publication Critical patent/WO2021022188A1/en

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    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
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    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/083—Ring lasers
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
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    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094049—Guiding of the pump light
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
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    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
    • H01S3/1625—Solid materials characterised by an active (lasing) ion transition metal titanium
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1631—Solid materials characterised by a crystal matrix aluminate
    • H01S3/1636—Al2O3 (Sapphire)
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]
    • H—ELECTRICITY
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking

Definitions

  • the present invention relates generally to lasers. More specifically, it relates to Titanium- doped sapphire lasers.
  • Titanium-doped sapphire (ThSapphire) laser is unique among other commercially available lasers due to its very wide gain bandwidth. This enables ThSapphire laser to be used as a wide-range (up to 650-1100 nm) tunable coherent source, and, consequently, as a source of ultra-fast pulsed light.
  • the Ti: Sapphire laser is an irreplaceable and very costly tool used for numerous industrial, biomedical, and research applications.
  • the cost of a Ti: Sapphire laser typically ranges between $30,000-200,000, excluding the pump laser.
  • the pump laser for the ThSapphire module is additionally $30,000-50,000.
  • such lasers occupy square meters of optical table surface. Therefore, the cost of Ti: Sapphire laser and its physical dimensions remain prohibitively large for wide-spread integration into equipment and devices, impeding further progress.
  • This description discloses a fully chip-integrated Ti: Sapphire laser producing ultrafast pulses, which can be driven by an inexpensive infrared diode as driving source.
  • This architecture is a complete microscale Ti: Sapphire laser system, which could fit into a volume on the order of a cubic centimeter, and is thus fully portable (reduction of many orders of magnitude relative to state of the art). Apart from the reduction in size, there would also be orders of magnitude of reduction in cost - to order of $1000 or less for the whole system.
  • the invention provides a Ti: Sapphire laser device comprising: a substrate (such as quartz, glass, sapphire, or others); a first waveguide resonator composed of a gain medium integrated onto the substrate in a planar technology configuration; a frequency doubler composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration and as a resonant or waveguiding component; a second waveguide resonator composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration; wherein the first waveguide resonator is optically coupled to the frequency doubler and is capable of producing laser radiation from pump diode light input to the Ti: Sapphire laser device; wherein the frequency doubler is optically coupled to the second waveguide resonator and is capable of producing frequency doubled radiation from the laser radiation.
  • a substrate such as quartz, glass, sapphire, or others
  • a first waveguide resonator composed of a gain medium integrated onto the substrate in a planar technology configuration
  • the first waveguide resonator is a Nd:YV0 resonator or Nd:YAG resonator.
  • the frequency doubler comprises a SiC ring resonator that frequency doubles the laser radiation via a doubly resonant second-harmonic generation process.
  • An alternative to SiC may be thin film lithium niobite resonator integrated on the same substrate.
  • the second waveguide resonator includes dispersion-engineered laser cavity mirrors.
  • the second waveguide resonator includes low-loss Kerr nonlinear mirror; and one broadband linear mirror and the Kerr nonlinear mirror form the second waveguide laser cavity.
  • the substrate is Si0 2 and the ThSapphire laser has a device layer stack comprising YVO on Si0 2 on SiC on Si0 2 on Ti: Sapphire on the substrate.
  • the infrared diode pumps an integrated Nd:YV0 ring resonator, which produces narrow-band laser light at 1064 nm.
  • the 1064 nm emission is routed onto a SiC ring resonator, which frequency-doubles it to 532 nm via doubly resonant efficient second harmonic generation process.
  • the 532 nm light is routed to the ThSapphire resonator.
  • the volume of the system is smaller than one cubic centimeter— many orders of magnitude smaller than the state of the art.
  • Fig. lA Schematic diagram illustrating the main components and structure of an integrated Ti: Sapphire laser device according to an embodiment of the invention.
  • Fig. lB Conceptual figure representing on chip integrated ThSapphire laser of size on the order of 100 pm. Combined with a commercial diode pump, its volume is smaller than one cubic centimeter - many orders of magnitude smaller than the state of the art.
  • Fig. lC Conceptual figure representing Ti: Sapphire laser cavity including a Kerr nonlinear mirror.
  • Fig. 2 A process flow for fabricating thin film Silicon Carbide on Insulator. This same approach can be used to transfer thin YVO films onto insulator, and thin Ti: Sapphire films onto insulator, thereby implementing the whole proposed circuit from Fig. 1.
  • Fig. 3 etched Sapphire waveguide sselling low-pressure, low-roughness reactive ion etching method used to produce integrated sapphire photonic structures.
  • an embodiment of the Ti: Sapphire laser device includes a substrate 100, a first waveguide resonator 102 composed of a gain medium integrated onto the substrate in a planar technology configuration, a frequency doubler 104 composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration, and a second waveguide resonator 106 composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration.
  • the first waveguide resonator 102 is optically coupled to the frequency doubler 104 and is capable of producing laser radiation from pump diode light 108 input to the ThSapphire laser device.
  • the frequency doubler 104 is optically coupled to the second waveguide resonator 106 and is capable of producing frequency doubled radiation from the laser radiation.
  • the ThSapphire laser device outputs laser light 110 from the second waveguide resonator 106.
  • the first waveguide resonator 102 may be a Nd:YV0 4 resonator or Nd:YAG resonator.
  • the frequency doubler 104 maybe a SiC ring resonator that frequency doubles the laser radiation via a doubly resonant second-harmonic generation process.
  • the second waveguide resonator 106 preferably includes dispersion- engineered laser cavity mirrors.
  • light 128 generated from an infrared diode (not shown) is input to the device and pumps an integrated Nd:YV0 4 ring resonator 122, which produces narrow-band laser light at 1064 nm.
  • the 1064 nm emission is routed onto a SiC ring resonator 124, which frequency-doubles it to 532 nm via doubly resonant efficient second harmonic generation process.
  • the 532 nm light is routed to the ThSapphire resonator 126.
  • the device outputs pulsed light 130.
  • the volume of the system is smaller than one cubic centimeter— many orders of magnitude smaller than the state of the art.
  • the substrate is Si0 2 and the ThSapphire laser has a device layer stack comprising YVO on Si0 2 on SiC on Si0 2 on Ti: Sapphire on the substrate.
  • a technique for fabricating Silicon Carbide on Insulator devices has been disclosed in US patent application number 16/805073, hereby incorporated by reference in its entirety. The process flow for fabricating Silicon Carbide on Insulator is shown in Fig. 2, and the process for YVO and ThSapphire follow a very similar process.
  • the techniques to implement thin film silicon carbide on insulator may be adapted to transfer thin YVO films onto insulator, and thin ThSapphire films onto insulator. The process, as shown in Fig.
  • a substrate 202, 204 and bulk active material 200 (YVO or ThSapphire).
  • the substrate and active material are fusion bonded 206 to each other at a bond interface to form material 208.
  • precision grinding 210 thins the material 212 down to thickness approximately 1 micron greater than target device thickness.
  • chemical-mechanical polishing 214 removes the last several microns of material, simultaneously producing a surface with roughness better than 3 Angstroms RMS. The result is layered material 216.
  • the modification of the technique for fabricating Silicon Carbide on Insulator devices disclosed in US patent application number 16/805073 enabling the extension of the technique to Sapphire is the use of a substrate with a matched thermal expansion coefficient: Fabrication of ThSapphire on insulator with a Sapphire handle is used to prevent strain build-up that would result in cracking of the film during thinning and polishing.
  • the versatility of this method enables the stacking of arbitrary layers of highly- pure crystalline materials. This is important for the implementation of on-chip ThSapphire laser.
  • the device layer stack for ThSapphire laser in one embodiment is YVO on Si0 2 , SiC on Si0 2 , and Ti: Sapphire on Si0 2 .
  • the integration of these materials together can be done via bonding them side by side on a chip and using low-loss vertically coupled waveguide interconnects to route light between the different stages of the device.
  • Sapphire is one of the most difficult dielectric materials to process for patterning nanostructures.
  • the fabrication is done via utilizing inductively coupled plasma (ICP).
  • ICP inductively coupled plasma
  • etch operation under low pressure e.g., o.1-0.5 mTorr
  • high bias e.g. 400-800 V
  • Ar ions Ar ions
  • partial etching into sapphire thereby not exposing Si0 2 underlayer, allows removal of redeposition via dilute Hydrofluoric acid, producing photonic structures entirely without etch redeposition, shown in Fig.
  • the ThSapphire laser device preferably includes dispersion-engineered laser cavity mirrors in the second waveguide resonator. This can be done via a traditional ring resonator approach (e.g., Nature Photonics, 10, 316 - 320 (2016)), or via dispersion engineered reflectors
  • the cavity dispersion is one of key parameters that determine temporal width and spectral shape of the pulsed laser output. Precise fabrication technique (Figs. 2 and 3) and various photonic designs enable broadband dispersion control. Such dispersion engineering techniques (e.g., see Optics Letters 19, 3, 201 - 203 (1-994)) maybe implemented in this laser device and provide a key role to generate broad bandwidth pulse.
  • Photonic inverse design methods may be used to implement optimal dispersion engineering.
  • Spectral bandwidth of pulse laser is important key metric for microscopy, spectroscopy, optical clock, and particle accelerator applications.
  • the TnSapphire laser device includes low-loss Kerr nonlinear mirror 154 in the second waveguide resonator.
  • the second waveguide resonator is formed using the Kerr nonlinear mirror 154 and one traditional mirror 152.
  • a mode locked laser generally requires a device that provides higher gain for short pulses and enable a self-starting laser (turnkey operation).
  • Free-space mode-locked laser uses semiconductor saturable absorber, Kerr lens, polarization rotator, and many more (e.g., see IEEE Journal of Selected Topics in Quantum Electronics, 6, 6, 1173 - 1185 (2000)). However, traditional devices are either non-integrable or cause high loss, low damage threshold, and narrow operation bandwidth.
  • the Kerr nonlinear mirror has a broadband linear waveguide mirror 156 and microring resonator 158.
  • the ring resonator is placed next to the waveguide mirror (e.g., see Nature Photonics, 14, 369 - 374 (2020)). Alternatives of the ring resonator would be photonic crystal resonator or another waveguide resonator.
  • the integrated Kerr nonlinear mirror shows higher reflectivity for short pulses with low insertion loss, broad operation bandwidth, and high damage threshold.
  • the device is implemented in this laser device (Ti: Sapphire second waveguide resonator) and enables a self-starting operation of mode-locked laser. Low-loss operation of the Kerr nonlinear mirror enables high peak power of pulsed laser.
  • the miniaturized and inexpensive Ti: Sapphire laser provided by the present invention may be integrated with on chip photonics and has many applications, such as the following.
  • LIDAR systems where a pulsed TnSapphire source could also be integrated with beam steering photonics on a single chip, thereby reducing the cost and size and enabling integration with other car sensors.
  • Dual-comb spectroscopy a monolithically integrated, short-acquisition-time solution for high spectral resolution spectroscopy, fully miniaturized.
  • Ultrastable terahertz- and radio- frequency signal generation where Ti: Sapphire mode-locked laser could be used to produce a spectrally pure micro- or terahertz- signal at the frequency of pulse repetition rate, with spectroscopy and imaging applications.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Lasers (AREA)

Abstract

An integrated Ti: Sapphire laser device includes a substrate [100], a first waveguide resonator [102] composed of a gain medium integrated onto the substrate in a planar technology configuration, a frequency doubler [104] composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration, and a second waveguide resonator [106] composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration.

Description

CHIP-INTEGRATED TITANIUM: SAPPHIRE LASER
FIELD OF THE INVENTION
The present invention relates generally to lasers. More specifically, it relates to Titanium- doped sapphire lasers.
BACKGROUND OF THE INVENTION
Lasers are at the core of a wide range of technologies, scientific research, and medical applications. Titanium-doped sapphire (ThSapphire) laser is unique among other commercially available lasers due to its very wide gain bandwidth. This enables ThSapphire laser to be used as a wide-range (up to 650-1100 nm) tunable coherent source, and, consequently, as a source of ultra-fast pulsed light. The Ti: Sapphire laser is an irreplaceable and very costly tool used for numerous industrial, biomedical, and research applications. The cost of a Ti: Sapphire laser, however, typically ranges between $30,000-200,000, excluding the pump laser. The pump laser for the ThSapphire module is additionally $30,000-50,000. Moreover, such lasers occupy square meters of optical table surface. Therefore, the cost of Ti: Sapphire laser and its physical dimensions remain prohibitively large for wide-spread integration into equipment and devices, impeding further progress.
The prospect of miniaturization and integration of a Ti: Sapphire laser with on chip photonics would revolutionize the field of photonics and have a major impact on many applications, including two-photon microscopy in neuroscience; LIDAR systems where a pulsed source could also be integrated with beam-steering photonics on a single chip, thereby reducing the cost and size and enabling integration with other car sensors; and quantum photonics, where large scale Ti: Sapphire lasers are used to pump quantum emitters to generate single or entangled photon states for quantum information processing. However, up to now, the implementation of a pulsed laser source on chip has been persistently elusive. SUMMARY OF THE INVENTION
This description discloses a fully chip-integrated Ti: Sapphire laser producing ultrafast pulses, which can be driven by an inexpensive infrared diode as driving source. This architecture is a complete microscale Ti: Sapphire laser system, which could fit into a volume on the order of a cubic centimeter, and is thus fully portable (reduction of many orders of magnitude relative to state of the art). Apart from the reduction in size, there would also be orders of magnitude of reduction in cost - to order of $1000 or less for the whole system.
In one aspect, the invention provides a Ti: Sapphire laser device comprising: a substrate (such as quartz, glass, sapphire, or others); a first waveguide resonator composed of a gain medium integrated onto the substrate in a planar technology configuration; a frequency doubler composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration and as a resonant or waveguiding component; a second waveguide resonator composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration; wherein the first waveguide resonator is optically coupled to the frequency doubler and is capable of producing laser radiation from pump diode light input to the Ti: Sapphire laser device; wherein the frequency doubler is optically coupled to the second waveguide resonator and is capable of producing frequency doubled radiation from the laser radiation.
In one implementation of the Ti: Sapphire laser device, the first waveguide resonator is a Nd:YV0 resonator or Nd:YAG resonator.
In one implementation of the Ti: Sapphire laser device, the frequency doubler comprises a SiC ring resonator that frequency doubles the laser radiation via a doubly resonant second-harmonic generation process. An alternative to SiC may be thin film lithium niobite resonator integrated on the same substrate. In one implementation of the Ti: Sapphire laser device, the second waveguide resonator includes dispersion-engineered laser cavity mirrors.
In one implementation of the Ti: Sapphire laser device, the second waveguide resonator includes low-loss Kerr nonlinear mirror; and one broadband linear mirror and the Kerr nonlinear mirror form the second waveguide laser cavity.
In one implementation of the Ti: Sapphire laser device, the substrate is Si02 and the ThSapphire laser has a device layer stack comprising YVO on Si02 on SiC on Si02 on Ti: Sapphire on the substrate.
In one example, the infrared diode pumps an integrated Nd:YV0 ring resonator, which produces narrow-band laser light at 1064 nm. The 1064 nm emission is routed onto a SiC ring resonator, which frequency-doubles it to 532 nm via doubly resonant efficient second harmonic generation process. The 532 nm light is routed to the ThSapphire resonator. Combined with a commercial diode pump, the volume of the system is smaller than one cubic centimeter— many orders of magnitude smaller than the state of the art.
The full chip-scale integration of the laser system simultaneously shrinks the size, boosts efficiency, enables low-power operation, and dramatically drops the system costs.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. lA: Schematic diagram illustrating the main components and structure of an integrated Ti: Sapphire laser device according to an embodiment of the invention. Fig. lB: Conceptual figure representing on chip integrated ThSapphire laser of size on the order of 100 pm. Combined with a commercial diode pump, its volume is smaller than one cubic centimeter - many orders of magnitude smaller than the state of the art.
Fig. lC: Conceptual figure representing Ti: Sapphire laser cavity including a Kerr nonlinear mirror. Fig. 2: A process flow for fabricating thin film Silicon Carbide on Insulator. This same approach can be used to transfer thin YVO films onto insulator, and thin Ti: Sapphire films onto insulator, thereby implementing the whole proposed circuit from Fig. 1.
Fig. 3: etched Sapphire waveguide showcasing low-pressure, low-roughness reactive ion etching method used to produce integrated sapphire photonic structures.
DETAILED DESCRIPTION
As illustrated in Fig. lA, an embodiment of the Ti: Sapphire laser device includes a substrate 100, a first waveguide resonator 102 composed of a gain medium integrated onto the substrate in a planar technology configuration, a frequency doubler 104 composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration, and a second waveguide resonator 106 composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration. The first waveguide resonator 102 is optically coupled to the frequency doubler 104 and is capable of producing laser radiation from pump diode light 108 input to the ThSapphire laser device. The frequency doubler 104 is optically coupled to the second waveguide resonator 106 and is capable of producing frequency doubled radiation from the laser radiation. The ThSapphire laser device outputs laser light 110 from the second waveguide resonator 106.
This embodiment maybe realized using various different material systems and resonator configurations. For example, the first waveguide resonator 102 may be a Nd:YV04 resonator or Nd:YAG resonator. The frequency doubler 104 maybe a SiC ring resonator that frequency doubles the laser radiation via a doubly resonant second-harmonic generation process. The second waveguide resonator 106 preferably includes dispersion- engineered laser cavity mirrors.
In one example shown in Fig. lB, light 128 generated from an infrared diode (not shown) is input to the device and pumps an integrated Nd:YV04 ring resonator 122, which produces narrow-band laser light at 1064 nm. The 1064 nm emission is routed onto a SiC ring resonator 124, which frequency-doubles it to 532 nm via doubly resonant efficient second harmonic generation process. The 532 nm light is routed to the ThSapphire resonator 126. The device outputs pulsed light 130. Combined with a commercial diode pump, the volume of the system is smaller than one cubic centimeter— many orders of magnitude smaller than the state of the art.
In one realization of the Ti: Sapphire laser device, the substrate is Si02 and the ThSapphire laser has a device layer stack comprising YVO on Si02 on SiC on Si02 on Ti: Sapphire on the substrate. A technique for fabricating Silicon Carbide on Insulator devices has been disclosed in US patent application number 16/805073, hereby incorporated by reference in its entirety. The process flow for fabricating Silicon Carbide on Insulator is shown in Fig. 2, and the process for YVO and ThSapphire follow a very similar process. The techniques to implement thin film silicon carbide on insulator may be adapted to transfer thin YVO films onto insulator, and thin ThSapphire films onto insulator. The process, as shown in Fig. 2, begins with a substrate 202, 204 and bulk active material 200 (YVO or ThSapphire). The substrate and active material are fusion bonded 206 to each other at a bond interface to form material 208. Then, precision grinding 210 thins the material 212 down to thickness approximately 1 micron greater than target device thickness. Finally, chemical-mechanical polishing 214 removes the last several microns of material, simultaneously producing a surface with roughness better than 3 Angstroms RMS. The result is layered material 216.
The modification of the technique for fabricating Silicon Carbide on Insulator devices disclosed in US patent application number 16/805073 enabling the extension of the technique to Sapphire is the use of a substrate with a matched thermal expansion coefficient: Fabrication of ThSapphire on insulator with a Sapphire handle is used to prevent strain build-up that would result in cracking of the film during thinning and polishing. The versatility of this method enables the stacking of arbitrary layers of highly- pure crystalline materials. This is important for the implementation of on-chip ThSapphire laser. The device layer stack for ThSapphire laser in one embodiment is YVO on Si02 , SiC on Si02 , and Ti: Sapphire on Si02. The integration of these materials together can be done via bonding them side by side on a chip and using low-loss vertically coupled waveguide interconnects to route light between the different stages of the device.
Sapphire is one of the most difficult dielectric materials to process for patterning nanostructures. We developed a fabrication technique based on photolithography and reactive-ion-etching for low-roughness sapphire etching with good selectivity against photoresist, to enable fabrication of high quality structures in Sapphire. The fabrication is done via utilizing inductively coupled plasma (ICP). In particular, we utilize chemically reactive ions for sapphire, such as BC13 and/or Cl2, which helps to provide fast and smooth etch. Furthermore, utilizing etch operation under low pressure (e.g., o.1-0.5 mTorr) condition with high bias (e.g., 400-800 V) and Ar ions, we are also combining ion-induced etching, which further improves etching conditions. With such etching technique, we are able to define waveguide and resonator structures in sapphire simultaneously maintaining a selectivity of 0.3 against photoresist while minimizing redeposition during etch. Redeposition during etching is particularly harmful to low roughness sidewalls. Finally, partial etching into sapphire, thereby not exposing Si02 underlayer, allows removal of redeposition via dilute Hydrofluoric acid, producing photonic structures entirely without etch redeposition, shown in Fig. 3. The ThSapphire laser device preferably includes dispersion-engineered laser cavity mirrors in the second waveguide resonator. This can be done via a traditional ring resonator approach (e.g., Nature Photonics, 10, 316 - 320 (2016)), or via dispersion engineered reflectors The cavity dispersion is one of key parameters that determine temporal width and spectral shape of the pulsed laser output. Precise fabrication technique (Figs. 2 and 3) and various photonic designs enable broadband dispersion control. Such dispersion engineering techniques (e.g., see Optics Letters 19, 3, 201 - 203 (1-994)) maybe implemented in this laser device and provide a key role to generate broad bandwidth pulse. Photonic inverse design methods may be used to implement optimal dispersion engineering. Spectral bandwidth of pulse laser is important key metric for microscopy, spectroscopy, optical clock, and particle accelerator applications. In one embodiment, shown in Fig. lC, the TnSapphire laser device includes low-loss Kerr nonlinear mirror 154 in the second waveguide resonator. The second waveguide resonator is formed using the Kerr nonlinear mirror 154 and one traditional mirror 152. A mode locked laser generally requires a device that provides higher gain for short pulses and enable a self-starting laser (turnkey operation). Free-space mode-locked laser uses semiconductor saturable absorber, Kerr lens, polarization rotator, and many more (e.g., see IEEE Journal of Selected Topics in Quantum Electronics, 6, 6, 1173 - 1185 (2000)). However, traditional devices are either non-integrable or cause high loss, low damage threshold, and narrow operation bandwidth. The Kerr nonlinear mirror has a broadband linear waveguide mirror 156 and microring resonator 158. The ring resonator is placed next to the waveguide mirror (e.g., see Nature Photonics, 14, 369 - 374 (2020)). Alternatives of the ring resonator would be photonic crystal resonator or another waveguide resonator. The integrated Kerr nonlinear mirror shows higher reflectivity for short pulses with low insertion loss, broad operation bandwidth, and high damage threshold. The device is implemented in this laser device (Ti: Sapphire second waveguide resonator) and enables a self-starting operation of mode-locked laser. Low-loss operation of the Kerr nonlinear mirror enables high peak power of pulsed laser.
The miniaturized and inexpensive Ti: Sapphire laser provided by the present invention may be integrated with on chip photonics and has many applications, such as the following.
1) A low-cost, compact, integratable solution for two-photon microscopy in medical research and neuroscience.
2) LIDAR systems where a pulsed TnSapphire source could also be integrated with beam steering photonics on a single chip, thereby reducing the cost and size and enabling integration with other car sensors.
3) Optical clocks of unprecedented precision, where frequency-stabilized TnSapphire laser would synthesize a microwave clock signal from atomic or ion transition frequency in an optical trap.
4) Dual-comb spectroscopy — a monolithically integrated, short-acquisition-time solution for high spectral resolution spectroscopy, fully miniaturized. 5) Ultrastable terahertz- and radio- frequency signal generation where Ti: Sapphire mode-locked laser could be used to produce a spectrally pure micro- or terahertz- signal at the frequency of pulse repetition rate, with spectroscopy and imaging applications.
6) Laser-driven dielectric particle accelerators on chip, which are crucial building blocks of on chip X- ray sources which would revolutionize medical applications.
7) Integrated quantum photonics devices. Currently, on-chip quantum photonic devices being developed for quantum computation and quantum repeaters employ large scale TLSapphire lasers to pump the quantum emitters with ultra-fast pulses. Generation of high purity single or entangled photon states for quantum information processing in a compact platform thus requires a compact ultra-fast source.

Claims

1. A Ti:Sapphire laser device comprising: a substrate; a first waveguide resonator composed of a gain medium integrated onto the substrate in a planar technology configuration; a frequency doubler composed of a second order nonlinear material integrated onto the substrate in a planar technology configuration; a second waveguide resonator composed of a titanium doped sapphire gain medium integrated onto the substrate in a planar technology configuration; wherein the first waveguide resonator is optically coupled to the frequency doubler and is capable of producing laser radiation from pump diode light input to the Ti: Sapphire laser device; wherein the frequency doubler is optically coupled to the second waveguide resonator and is capable of producing frequency doubled radiation from the laser radiation.
2. The Ti: Sapphire laser device of claim l wherein the first waveguide resonator is a Nd:YV0 resonator or Nd:YAG resonator.
3. The Ti: Sapphire laser device of claim 1 wherein the frequency doubler comprises a SiC ring resonator that frequency doubles the laser radiation via a doubly resonant second- harmonic generation process.
4. The ThSapphire laser device of claim 1 wherein the frequency doubler comprises a thin film lithium niobite resonator.
5. The T Sapphire laser device of claim 1 wherein the second waveguide resonator includes dispersion-engineered laser cavity mirrors.
6. The ThSapphire laser device of claim 1 wherein the second waveguide resonator includes a low-loss Kerr nonlinear mirror and one broadband linear mirror.
7. The Ti: Sapphire laser device of claim 1 wherein the substrate is Si02 and the ThSapphire laser has a device layer stack comprising YVO on Si02 on SiC on Si02 on Ti: Sapphire on the substrate.
8. The ThSapphire laser device of claim 1 wherein the substrate is quartz, glass, or sapphire.
PCT/US2020/044560 2019-07-31 2020-07-31 Chip-integrated titanium:sapphire laser WO2021022188A1 (en)

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US6836592B2 (en) * 2000-11-20 2004-12-28 Aculight Corporation Method and apparatus for fiber Bragg grating production
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