WO2020244223A1 - 滤光片 - Google Patents

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Publication number
WO2020244223A1
WO2020244223A1 PCT/CN2019/130577 CN2019130577W WO2020244223A1 WO 2020244223 A1 WO2020244223 A1 WO 2020244223A1 CN 2019130577 W CN2019130577 W CN 2019130577W WO 2020244223 A1 WO2020244223 A1 WO 2020244223A1
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WIPO (PCT)
Prior art keywords
film
refractive index
film system
pass
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/130577
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English (en)
French (fr)
Chinese (zh)
Inventor
陈策
丁维红
方叶庆
杨伟
肖念恭
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Xinyang Sunny Optics Co Ltd
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Xinyang Sunny Optics Co Ltd
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Publication date
Application filed by Xinyang Sunny Optics Co Ltd filed Critical Xinyang Sunny Optics Co Ltd
Priority to KR1020217034652A priority Critical patent/KR20220002321A/ko
Priority to SG11202111677YA priority patent/SG11202111677YA/en
Priority to JP2021564099A priority patent/JP7436508B2/ja
Priority to EP19931930.2A priority patent/EP3982171A4/en
Publication of WO2020244223A1 publication Critical patent/WO2020244223A1/zh
Priority to US17/517,047 priority patent/US12181698B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/281—Interference filters designed for the infrared light
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters

Definitions

  • the present disclosure relates to the field of optical elements, and more specifically, to a near-infrared filter.
  • the near-infrared narrow-band filter can be applied to face recognition systems, gesture recognition systems, lidars, and smart home appliances. When these systems or devices work, the near-infrared narrow-band filter often receives obliquely incident light.
  • the near-infrared narrow-band filter usually includes a substrate. The two sides of the substrate are coated with a multilayer film to form a film system.
  • the near-infrared narrow-band filter has a passband corresponding to light. , Most of the light in the non-passband band is cut off.
  • the industry needs a filter with excellent filtering performance to improve image quality.
  • the embodiments of the present application propose a filter and a method for manufacturing the filter.
  • the embodiment of the present application also provides an optical system.
  • the embodiment of the present application provides a filter, the filter includes a substrate and a first film system arranged on the outer side of the first surface of the substrate, the first film system includes a high refractive index film layer, A low refractive index film layer and a matching film layer; the material of the matching film layer includes a nitrogen-doped silicon-germanium mixture, and the chemical formula of the nitrogen-doped silicon-germanium mixture is Si x Ge 1-x N y , where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.1, in the wavelength range of 780nm to 3000nm, the refractive index of the high refractive index film layer is greater than the refractive index of the low refractive index film layer, and the refractive index of the matching film layer is not equal to The refractive index of adjacent layers.
  • the filter has a pass band, and when the incident angle of light changes from 0° to 30°, the shift of the center wavelength of the pass band is not more than 16 nm.
  • the pass band of the filter has a center wavelength corresponding to p light and a center wavelength corresponding to s light.
  • the incident angle of the light is 30°
  • the center wavelength of the corresponding p light and the corresponding s light The drift between the center wavelengths is not more than 5nm.
  • the average transmittance of the passband of the filter is not less than 93%.
  • the refractive index of the high refractive index film layer is greater than 3
  • the refractive index of the low refractive index film layer is less than 3
  • the refractive index of the matching film layer is located at 1.7. To 4.5.
  • the nitrogen-doped silicon-germanium mixture can be further doped with hydrogen, and the chemical formula is Si x Ge 1-x N y :H z , where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, z ⁇ 1, at least part of which is an amorphous hydrogenated nitrogen-doped silicon germanium mixture ⁇ -Si x Ge 1-x O y :H z .
  • the nitrogen-doped silicon-germanium mixture further includes an auxiliary component, the auxiliary component includes one or more of oxygen, boron, or phosphorus, and the number of atoms in the auxiliary component is less than the number of silicon atoms.
  • the ratio is less than 10%.
  • the material of the high refractive index film layer includes Si w Ge 1-w :H v , where 0 ⁇ w ⁇ 1 and 0 ⁇ v ⁇ 1.
  • the material of the low refractive index film layer includes one of SiO 2 , Si 3 N 4 , Ta 2 O 5 , Nb 2 O 5 , TiO 2 , Al 2 O 3 , SiCN, SiC, or A variety of mixtures
  • the substrate further includes a second surface opposite to the first surface, and the filter further includes a second film system disposed outside the second surface of the substrate;
  • the second film system is a long wave pass film system or a wide band pass film system, the first film system is a narrow band pass film system; the pass band of the second film system covers the pass band of the first film system.
  • the sum of the thickness of the first film system and the thickness of the second film system is less than 12 ⁇ m.
  • the second film system is a long wave pass film system, corresponding to a wavelength range of 350 nm to 1200 nm, the narrow band pass film system has a pass band, and the long wave pass film system has a pass band and a cutoff band.
  • the pass band of the long-wave pass film system covers the pass band of the narrow-band pass film system; the cut-off degree of the cut-off band of the long-wave pass film system is not lower than the cut-off degree of the corresponding wavelength band of the narrow-band pass film system.
  • the second film system is a broadband pass film system, corresponding to a wavelength range of 780 nm to 1200 nm, the narrow band pass film system has a pass band, the broadband pass film system has a pass band, and the broadband pass film
  • the passband of the system covers the passband of the narrowbandpass film system; corresponding to a wavelength range of less than 780nm, the average cutoff of the widebandpass film system is not lower than the average cutoff of the narrowbandpass film system.
  • the structural form of the first film system is one of the following structural forms: (L 3 -L 1 -L 3 -L 2 ) s -L 3- L 1 ; (L 1 -L 3 ) 2 -(L 2 -L 3 -L 1 -L 3 ) s -L 1 -L 3 ; (L 1 -L 3 ) s –(L 2 -(L 1- L 3 ) p -L 1 -L 2 ) q -(L 1 -L 3 ) r L 1 ;(L 3 -L 1 ) s –(L 2 -(L 1 -L 3 ) p -L 1 -L 2 ) q -(L 3 -L 1 ) r L 3 -L 1 -(L 2 -(L 1 -L 3 ) t -L 1 -L 2 ) n ; (L 3 -L 1 ) s
  • an embodiment of the present application provides an optical system, which may include an infrared image sensor and the aforementioned filter, and the filter is disposed on the photosensitive side of the infrared image sensor.
  • the first film system of the optical filter includes a high refractive index film layer, a matching film layer and a low refractive index film layer
  • the material of the matching film layer is the nitrogen-doped silicon germanium mixture Suitable for matching high refractive index film or low refractive index film.
  • the silicon-germanium mixture is doped with nitrogen atoms to change the bonding mode of germanium (or silicon) and other elements, so that the moles of nitrogen are less than the sum of moles of silicon and moles of germanium. 10%, different nitrogen doping content has different effects on the refractive index of the material. For details, see the relationship between refractive index and nitrogen doping in the figure below.
  • the nitrogen doping quantity to produce suitable medium refractive index materials for F-P structure film material or matching layer film material or.
  • the bandwidth of the passband of the filter provided by the present application is small when light is incident at different angles.
  • the optical system provided with this filter has a high signal-to-noise ratio and high data quality. In other words, under the same signal-to-noise ratio requirement, other parts of the optical system can have a higher design margin.
  • Fig. 1 shows a schematic structural diagram of a filter according to an embodiment of the present application
  • Figure 3 shows a transmittance wavelength curve according to the first embodiment of the present application
  • Figure 4 shows a transmittance wavelength curve according to the second embodiment of the present application
  • Figure 5 shows the transmittance wavelength curve according to the third embodiment of the present application.
  • Fig. 6 shows a schematic structural diagram of an optical system according to an embodiment of the present application.
  • first, second, third, etc. are only used to distinguish one feature from another feature, and do not represent any restriction on the feature. Therefore, without departing from the teachings of the present application, the first film system discussed below may also be referred to as the second film system. vice versa.
  • Fig. 1 shows a schematic structural diagram of a filter according to an embodiment of the present application.
  • the filter 5 provided by the embodiment of the present application includes: a substrate 51 and a first film system 52.
  • the substrate 51 is a transparent substrate and includes an upper surface and a lower surface opposite to each other.
  • the upper surface is the first surface and the lower surface
  • the surface is the second surface, and the first film system 52 is disposed outside the first surface of the base 51.
  • the first film system 52 includes a high refractive index film layer, a low refractive index film layer and a matching film layer.
  • the shape of the substrate 51 has other optical structures, such as a prism, the light incident surface of the substrate 51 can be regarded as the first surface, and the light exit surface can be regarded as the second surface.
  • the material of the matching film layer includes a hydrogenated nitrogen-doped silicon-germanium mixture
  • the chemical formula of the hydrogenated nitrogen-doped silicon-germanium mixture is Si x Ge 1-x N y :H, where 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 0.1.
  • the chemical formula of the nitrogen-doped silicon-germanium mixture is Si x Ge 1-x N y , 0 ⁇ x ⁇ 0.5, and 0 ⁇ y ⁇ 0.1, for example, the chemical formula of the nitrogen-doped silicon-germanium mixture is Si 0.5 Ge 0.5 N 0.05 .
  • the chemical formula of the nitrogen-doped silicon-germanium mixture is Si 0.1 Ge 0.9 N 0.02 :H 0.7 .
  • the chemical formula of the nitrogen-doped silicon germanium mixture is SiN 0.1 :H.
  • the material of at least a part of the matching film layer is an amorphous nitrogen-doped silicon germanium mixture: ⁇ -Si x Ge 1-x N y .
  • the volume of the amorphous nitrogen-doped silicon-germanium mixture accounts for 20% of the volume of the matching film.
  • the matching film layer is formed by accumulation of molecular layers.
  • the matching film layer includes several amorphous nitrogen-doped silicon germanium mixture layers and several single crystal nitrogen-doped silicon germanium mixture layers, of which all amorphous nitrogen-doped silicon germanium The ratio of the thickness of the mixture layer to the thickness of the matching film layer is between 16% and 20%.
  • the material of the matching film layer includes one or more of a polycrystalline nitrogen-doped silicon germanium mixture, a microcrystalline nitrogen-doped silicon germanium mixture, and a nanocrystalline nitrogen-doped silicon germanium mixture.
  • the optical constants of the matching film layer are suitable for precise setting in a large range, and can keep the state of P light and s light passing through it stable in a complex working environment, so that the center wavelength of p light of the first film system The drift with the center wavelength of s light is small.
  • the refractive index of the high refractive index film layer is greater than the refractive index of the low refractive index film layer, and the refractive index of the matching film layer is not equal to the refractive index of its adjacent film layer.
  • the optical filter provided by the embodiment of the present application can accurately set the optical constants and realize the specially designated optical characteristics in a wide range. For example, a narrowband filter with a specific bandwidth.
  • the optical filter provided in the present application can be used to realize the passage of a specific optical band gap in a photovoltaic cell, or to achieve high absorption or high cut-off of light in a specific wavelength band.
  • the filter 5 has a pass band, and when the incident angle of light changes from 0° to 30°, the shift amount of the center wavelength of the pass band is not more than 16 nm.
  • the shift amount of the center wavelength of the pass band is not more than 13 nm, for example, not more than 11 nm. It can increase the bandwidth of the passband by controlling the drift of the center wavelength and improve the signal-to-noise ratio.
  • the pass band of the filter 5 has a center wavelength corresponding to p light and a center wavelength corresponding to s light.
  • the incident angle of the light is 30°
  • the center wavelength of the corresponding p light and the corresponding s light The drift between the center wavelengths is not more than 5nm.
  • the drift between the center wavelength of p light and the center wavelength of s light is not more than 4.2 nm. Controlling the drift between the center wavelength of the p light and the center wavelength of the s light can increase the bandwidth of the passband, so that devices and circuits using the filter have a higher design margin.
  • the average transmittance of the pass band of the filter 5 is not less than 93%.
  • the average transmittance of the pass band of the filter 5 is not less than 94%.
  • the average transmittance of the passband is controlled so that the light intensity of the wavelength band corresponding to the passband of the light passing through the filter 5 is high, and the signal-to-noise ratio can also be improved.
  • the refractive index of the high refractive index film layer is greater than 3, the refractive index corresponding to the low refractive index film layer is less than 3, and the refractive index corresponding to the matching film layer is between 1.7 and 4.5 .
  • the refractive index of the high refractive index film layer is greater than 4
  • the refractive index of the matching layer is between 3 and 4.5
  • the refractive index of the low refractive index film layer is less than 3.
  • the refractive index of the high refractive index film layer is 4.5
  • the refractive index of the low refractive index film layer is 2.8
  • the plurality of matching film layers have different refractive indexes, for example, the refractive indexes are 3, 3.5, and 4 respectively.
  • the state of light after passing through each film layer is controlled, for example, the optical properties of p light and s light after passing through.
  • the gap is small to realize the specific optical characteristics of the first film system 52.
  • the refractive index of the matching film layer is less than the refractive index of the high refractive index film layer, and the refractive index of the matching film layer is greater than the refractive index of the low refractive index film layer.
  • the nitrogen-doped silicon-germanium mixture is a hydrogenated nitrogen-doped silicon-germanium mixture
  • the chemical formula of the hydrogenated nitrogen-doped silicon-germanium mixture is Si x Ge 1-x N y :H z , where 0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 0.1, z ⁇ 1.
  • the chemical formula of the hydrogenated oxygen-doped silicon germanium-based material is Si 0.5 Ge 0.5 N 0.05 :H 0.5 .
  • the chemical formula Si x Ge 1-x N y :H z of the hydrogenated oxygen-doped silicon germanium-based material 0 ⁇ x ⁇ 0.3, 0 ⁇ y ⁇ 0.1, 0.8 ⁇ z ⁇ 1; exemplary
  • the chemical formula of hydrogenated oxygen-doped silicon germanium-based materials is Si 0.1 Ge 0.9 N 0.02 :H 0.7 .
  • the chemical formula of the hydrogenated oxygen-doped silicon germanium-based material is SiN 0.1 :H, that is, the hydrogenated oxygen-doped silicon-germanium-based material.
  • At least a part of the hydrogenated nitrogen-doped silicon germanium mixture is an amorphous hydrogenated nitrogen-doped silicon germanium mixture: ⁇ -Si x Ge 1-x N y :H z .
  • the nitrogen-doped silicon-germanium mixture further includes auxiliary components, the auxiliary components include one or more of nitrogen, boron, or phosphorus, and the ratio of the number of atoms of each auxiliary component to the number of silicon atoms is less than 0.1.
  • the material of the high refractive index film layer includes Si w Ge 1-w :H v , where 0 ⁇ w ⁇ 1 and 0 ⁇ v ⁇ 1.
  • w is 0.2 or 0.37.
  • the material of the low refractive index film layer includes one or more of SiO 2 , Si 3 N 4 , Ta 2 O 5 , Nb 2 O 5 , TiO 2 , Al 2 O 3 , SiCN, and SiC. Kind of mixture.
  • the material of the substrate includes glass. Specifically, it can be D263T, AF32, Eagle XG, H-ZPK5, H-ZPK7, etc.
  • the substrate further includes a second surface opposite to the first surface, and the filter further includes a second film system disposed outside the second surface of the substrate; the second film system is a long-wave pass film system or Broadband pass film system, the first film system is a narrow band pass film system; the pass band of the second film system covers the pass band of the first film system.
  • the filter 5 can have a better anti-reflection and cut-off effect on the light, so that the light passing through the filter 5 has a higher signal-to-noise ratio.
  • the sum of the thickness of the first film system and the thickness of the second film system is less than 15 ⁇ m, for example, less than 12 ⁇ m. Controlling the thickness of the two film systems can make the shift between the center wavelength corresponding to the p light and the center wavelength corresponding to the s light small, and at the same time can reduce the manufacturing cost.
  • the second film system is a long wave pass film system, corresponding to the wavelength range of 350 nm to 1200 nm
  • the narrow band pass film system has a pass band
  • the long wave pass film system has a pass band and a cutoff band
  • the long wave pass film system has a pass band.
  • the band covers the pass band of the narrow-band pass film system; the cut-off degree of the cut-off band of the long-wave pass film system is not lower than the cut-off degree of the corresponding band of the narrow-band pass film system. Controlling the cut-off of the long-wavelength pass film system can better improve the cut-off of the filter 5 and reduce the light transmittance of the corresponding wavelength band, so that the noise signal in the image formed by the light passing through the filter 5 is weak.
  • the second film system is a broadband pass film system, corresponding to the wavelength range of 780 nm to 1200 nm, the narrow band pass film system has a pass band, the broadband pass film system has a pass band, and the pass band of the broadband pass film system covers the narrow band pass
  • the pass band of the film system corresponding to the wavelength range of less than 780nm, the average cut-off of the broadband pass film is not lower than the average cut-off of the narrow band pass film. Controlling the cut-off degree of the broadband pass film system can better improve the cut-off degree of the filter 5 and reduce the light transmittance of the corresponding wavelength band, so that the noise signal in the image formed by the light passing through the filter 5 is weak.
  • the structural form of the first film system is one of the following structural forms: (L 3 -L 1 -L 3 -L 2 ) s -L 3 -L 1 ; (L 1 -L 3 ) 2 -(L 2 -L 3 -L 1 -L 3 ) s -L 1 -L 3 ; (L 1 -L 3 ) s -(L 2 -(L 1 -L 3 ) p -L 1 -L 2 ) q -(L 1 -L 3 ) r L 1 ;(L 3 -L 1 ) s –(L 2 -(L 1 -L 3 ) p -L 1 -L 2 ) q -(L 3 -L 1 ) r L 3 -L 1 -(L 2 -(L 1 -L 3 ) t -L 1 -L 2 ) n ; (L 3 -
  • the filter 5 of this embodiment includes a substrate 51.
  • a first film system 52 formed by sputtering is provided on the outer side of the first surface of the substrate 51.
  • the first film system 52 may include the narrow bandpass film system provided in Table 1.
  • the first layer is the film layer closest to the substrate 51; the second surface of the substrate 51 is provided with a second film system 53 formed by sputtering coating.
  • the second film system 53 may include the long wave pass film system provided in Table 2, where the first The layer is the film layer closest to the substrate 51. 3, when the incident angle of light changes from 0° to 30°, the shift of the center wavelength of the pass band of the filter 5 is not greater than 12 nm.
  • Table 1 of this application provides a narrow bandpass film system, and the materials of the film layers in the same column in Table 1 are the same.
  • the serial numbers 1-22 indicate the stacking order of the film layers of the first film system 52 along the direction away from the substrate 51. For example, "1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 1 The film structure of a narrow band pass film system (film thickness unit: nm)
  • the material of the high refractive index film layer is ⁇ -Si:H
  • the material of the low refractive index film layer is SiO 2
  • the material of the matching film layer is ⁇ -SiNy: Hz.
  • Table 2 provides a long-wave pass film system, and the materials of the film layers in the same column in Table 2 are the same.
  • the numbers 1-27 indicate the stacking order of the layers of the second film system 53 along the direction away from the substrate 51. For example, "1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 2 The film structure of a long wave pass film system (film thickness unit: nm)
  • the filter 5 has a thinner thickness, is easier to manufacture, has a higher pass band transmittance, and the required light intensity of the light passing through the filter 5 is higher.
  • the filter 5 provided in this embodiment includes a base 51.
  • the first surface of the base 51 is provided with a first film system 52 formed by sputtering coating, and the second surface of the base 51 is provided with a second film system formed by evaporation coating. 53.
  • the first film system 52 may include the narrow band pass film system provided in Table 3, wherein the first layer is the film layer closest to the substrate 51; the second film system 53 may include the long wave pass film system provided in Table 4, of which the first The layer is the film layer closest to the substrate 51. Referring to Fig. 4, when the incident angle of the light is changed from 0° to 30°, the shift of the center wavelength of the pass band of the filter 5 is less than 13 nm.
  • Table 3 provides a narrow bandpass film system.
  • the numbers 1-23 indicate the stacking order of the film layers of the first film system 52 in the direction away from the substrate 51.
  • “1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 3 Film structure of a narrow band pass film system (film thickness unit: nm)
  • the material of the high refractive index film layer is ⁇ -Si:H
  • the material of the low refractive index film layer is SiO 2
  • the material of the matching film layer is ⁇ -GeN y :H z .
  • the eleventh layer is a matching film layer, which is arranged symmetrically with the film layer roughly according to the eleventh layer.
  • Table 4 provides a long-wave pass film system, and the materials of the film layers in the same column in Table 4 are the same.
  • the serial numbers 1-47 indicate the stacking order of the film layers of the second film system 53 along the direction away from the substrate 51. For example, "1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 4 The film structure of a long wave pass film system (film thickness unit: nm)
  • the width of the pass band of the filter 5 is relatively narrow, the offset between the center wavelength of the p light and the center wavelength of the s light is relatively small, and the cutoff of the cutoff region is relatively high.
  • the filter 5 provided in this embodiment includes a base 51.
  • a first film system 52 formed by sputtering is provided on the outside of the first surface of the base 51, and a second film formed by sputtering is provided on the outside of the second surface of the base 51.
  • the first film system 52 may include the narrow bandpass film system provided in Table 5, where the first layer is the film layer closest to the substrate 51;
  • the second film system 53 may include the wide band pass film system provided in Table 6, where the first The first layer is the film layer closest to the base 51. Please refer to FIG. 5, when the incident angle of light changes from 0° to 30°, the shift of the center wavelength of the passband of the filter 5 is less than 11 nm.
  • Table 5 provides a narrow band pass film system.
  • the serial numbers 1-30 indicate the stacking sequence of the film layers of the first film system 52 along the direction away from the substrate 51.
  • "1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 5 Film structure of a narrow band pass film system (film thickness unit: nm)
  • the material of the high refractive index film layer is Si w Ge 1-w :H z
  • the material of the low refractive index film layer is SiO 2
  • the material of the matching film layer is ⁇ -SiNy: Hz.
  • the structure of the 5th to the 28th layer is (L 2 -L 3 -L 1 -L 3 ) 6 .
  • Table 6 provides a wide band pass film system, and the serial numbers 1-35 indicate the stacking sequence of the film layers of the second film system 53 along the direction away from the substrate 51. For example, "1" represents the first layer of the film layer closest to the substrate 51 described above.
  • Table 6 Film structure of a broadband pass film system (film thickness unit: nm)
  • the width of the pass band of the filter 5 is relatively narrow, the center wavelength shift of the pass band is small, and the transmittance of the pass band is high.
  • the first film system 52 and the second film system 53 of the filter 5 may also have other film layer structures.
  • the first film system 52 or The second film system 53 can also be applied to other exemplary embodiments.
  • other transparent layers, such as air cavities, can be provided on the outside of the first surface and the outside of the second surface of the filter 5.
  • the embodiment of the present application also provides a method for manufacturing a filter, which includes the following steps:
  • the target material includes silicon and germanium components. Vacuum the deposition chamber and the vacuum degree in the deposition chamber is preset value;
  • the flow of hydrogen is a preset value, and the flow of oxygen is less than 60 sccm; a film is formed on the article to be plated, and the material of the film includes the aforementioned nitrogen-doped silicon germanium mixture.
  • the vacuum degree in the deposition chamber is less than 5 ⁇ 10 -5 torr; the flow rate of argon is between 10 sccm and 300 sccm; the flow rate of hydrogen is less than 80 sccm.
  • the embodiment of the present application also provides an optical system, which includes an infrared image sensor and the aforementioned filter 5, and the filter 5 is arranged on the photosensitive side of the infrared image sensor.
  • the optical system includes an infrared (IR) light source 2, a first lens assembly 3, a second lens assembly 4, a filter 5 and a three-dimensional sensor 6.
  • the light emitted by the infrared light source 2 is irradiated to the surface of the test object 1 through the first lens assembly 3, and the light reflected from the surface of the test object 1 is irradiated to the filter 5 through the second lens assembly 4, and the ambient light is cut off by the filter 5.
  • infrared or part of the red light-transmitting filter 5 irradiates the photosensitive side of the three-dimensional sensor 6 to form image data for processing.
  • the filter 5 has a relatively low center wavelength offset corresponding to oblique light in different directions, the transmitted infrared ray has a high signal-to-noise ratio, and the resulting image quality is good.

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  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
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  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Filters (AREA)
  • Laminated Bodies (AREA)
PCT/CN2019/130577 2019-06-05 2019-12-31 滤光片 Ceased WO2020244223A1 (zh)

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JP2021564099A JP7436508B2 (ja) 2019-06-05 2019-12-31 光学フィルター
EP19931930.2A EP3982171A4 (en) 2019-06-05 2019-12-31 OPTICAL FILTER PLATE
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CN115808733B (zh) * 2023-02-08 2023-05-23 南京英田光学工程股份有限公司 一种基于卫星激光通信的滤波片

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CN110109210B (zh) 2024-06-18
EP3982171A1 (en) 2022-04-13
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SG11202111677YA (en) 2021-11-29
CN110109210A (zh) 2019-08-09

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