WO2020239002A1 - 一种电介质薄膜中电荷分布的双面原位测量系统及方法 - Google Patents

一种电介质薄膜中电荷分布的双面原位测量系统及方法 Download PDF

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WO2020239002A1
WO2020239002A1 PCT/CN2020/092809 CN2020092809W WO2020239002A1 WO 2020239002 A1 WO2020239002 A1 WO 2020239002A1 CN 2020092809 W CN2020092809 W CN 2020092809W WO 2020239002 A1 WO2020239002 A1 WO 2020239002A1
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sided
double
dielectric film
measurement
circuit
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郑飞虎
谢姣
张冶文
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Tongji University
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Tongji University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential
    • G01R29/14—Measuring field distribution
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge

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  • the invention relates to a measurement technology of charge distribution in a dielectric film, in particular to a double-sided in-situ measurement system and method for charge distribution in a dielectric film based on a thermal pulse method.
  • Dielectric film has many advantages, such as good insulation performance, strong resistance to mechanical stress, high pressure and temperature resistance, light weight, etc., so it is widely used as an insulating dielectric layer for electrical equipment such as capacitors. Under the external high DC electric field, the space charge accumulation phenomenon inside the dielectric film cannot be ignored. The accumulated charge will distort the originally uniform electric field inside the dielectric, and affect the safety and reliability of the operation of electrical equipment such as capacitors.
  • the thermal pulse method is a method to measure the electric field and space charge density of the dielectric film.
  • the basic principle is that the laser pulse is irradiated on the metalized electrode on the surface of the dielectric film.
  • the metalized electrode absorbs part of the light pulse energy and converts it into a heat pulse.
  • the pulse is conducted along the light incident direction to the inside of the dielectric film. Due to the non-uniform temperature change, the internal space charge changes slightly with the local deformation of the sample, which causes the change of the induced charge on the electrode, thereby generating a weak current in the external circuit. Analyzing the current signal can obtain the electric field and charge density distribution of the dielectric film.
  • the thermal pulse method has the characteristics of high resolution near the heated surface of the dielectric film, and is suitable for the measurement of the electric field and charge distribution in the dielectric film with a thickness of several microns and tens of microns.
  • the pressure wave method and the electroacoustic pulse method are also widely used to measure the electric field and charge density distribution of the dielectric film.
  • the pressure wave method and the electroacoustic pulse method propagate inside the dielectric film in the form of sound waves. In the propagation process, although the waveform remains almost unchanged, the overall resolution is not as good as that of the thermal pulse method.
  • the pressure wave method and electroacoustic pulse method have a resolution of several tens of microns, which are only suitable for measuring dielectric films with a thickness of several hundreds of microns.
  • the resolution of the thermal pulse method is related to the pulse width of the thermal pulse conducted to the inside of the dielectric film.
  • the narrower the pulse width the higher the resolution.
  • the thermal pulse waveform exhibits a wider pulse width and lower amplitude during the conduction process, resulting in a rapid decrease in resolution along the conduction direction. Therefore, when only one-sided measurement is performed on the dielectric film, the measurement resolution is much higher in the first half of the thickness range than the second half, which is not conducive to the later analysis and processing of the data.
  • the purpose of the present invention is to provide a double-sided in-situ measurement system and method for charge distribution in a dielectric film, so as to solve the problem that the resolution of the existing heat pulse method decreases in the direction of heat conduction.
  • the present invention provides the following solutions:
  • a double-sided in-situ measurement system for charge distribution in a dielectric film including a sample to be tested, a pulsed laser, a photoelectric trigger circuit, a double-sided measurement optical circuit, a pressure circuit, and a measurement circuit;
  • the sample to be tested includes: a dielectric film to be tested, and front and back coated electrodes arranged on both sides of the dielectric film to be tested;
  • the laser light generated by the pulse laser is divided into two paths, one laser light enters the photoelectric trigger circuit, and the other laser light enters the double-sided measurement optical path;
  • the photoelectric trigger circuit includes: a photodiode and an oscilloscope; the photodiode is connected to the oscilloscope;
  • the double-sided measuring optical path includes: a plurality of reflecting mirrors; the plurality of the emitting mirrors are used to divide the laser light entering the double-sided measuring optical path into two paths, and are used to make the two divided laser paths incident on the laser beams.
  • the pressure circuit includes: a direct current high voltage source, a first ground terminal, a second ground terminal, a coupling capacitor, a single pole double throw switch, and a protection circuit;
  • the direct current high voltage source is connected to the reverse plating electrode;
  • the reverse plating electrode It is also connected to the moving end of the single pole double throw switch through the coupling capacitor;
  • the first stationary end of the single pole double throw switch is connected to the second ground terminal;
  • the second stationary end of the single pole double throw switch The terminal is connected to the protection circuit;
  • the front surface plating electrode is connected to the first ground terminal; the protection circuit is connected to the measurement circuit.
  • it further includes: 1/9 beam splitter;
  • the laser light generated by the pulsed laser is divided into two paths by the 1/9 beam splitter, in which 10% of the laser light in one path enters the photoelectric trigger circuit, and 90% of the laser light in the other path enters the double-sided measuring circuit.
  • the plurality of reflecting mirrors are specifically: a first 45° reflecting mirror, a second 45° reflecting mirror, a third 45° reflecting mirror and a fourth 45° reflecting mirror; the first 45° reflecting mirror has a Rotation and reset function and as the switching point of the double-sided measurement optical path;
  • the double-sided measurement circuit has two functions: front measurement and reverse measurement; when the front measurement is performed, the first 45° reflector is rotated away, and the incident laser light is directly incident on the front side through the second 45° reflector Coated electrode; when the reverse measurement is performed, the first 45° reflector is reset, and the incident laser light passes through the first 45° reflector, the third 45° reflector, and the fourth 45° reflector and then enters the Electrode plated on the reverse side.
  • the pressurizing circuit further includes: a current limiting resistor;
  • the direct current high voltage source is connected to the reverse plating electrode through the current limiting resistor.
  • the resistance value of the current limiting resistor is smaller than the insulation resistance of the sample to be tested.
  • the measurement circuit includes: an amplifier;
  • the output terminal of the amplifier is connected with the oscilloscope; the input terminal of the amplifier is connected with the protection circuit.
  • it further includes: a ring electrode;
  • the ring electrode is respectively connected to the front surface plating electrode and the reverse surface plating electrode, and the ring electrode is arranged concentrically with the front surface plating electrode and the reverse surface plating electrode.
  • the capacitance value of the coupling capacitor is greater than or equal to 100 times the capacitance value of the sample to be tested.
  • a double-sided in-situ measurement method for charge distribution in a dielectric film wherein the double-sided in-situ measurement method is a method for double-sided in-situ measurement using the above-mentioned double-sided in-situ measurement system for charge distribution in a dielectric film;
  • Two-sided in-situ measurement methods including:
  • the laser generated by the pulsed laser is divided into two paths.
  • One path uses the photoelectric trigger circuit to trigger the oscilloscope to collect signals, and the other path uses the double-sided measurement optical path and the measurement circuit to obtain the front trigger response current signal and the back trigger response current.
  • Signal, and the oscilloscope displays the front trigger response current signal and the back trigger response current signal;
  • S6 Determine the electric field distribution and charge density distribution of the first 50% of the thickness of the dielectric film to be tested on the front side according to the electric field distribution curve and the charge density distribution curve of the front surface trigger response current;
  • the density distribution curve determines the electric field distribution and charge density distribution of the first 50% of the thickness of the reverse side of the dielectric film to be tested;
  • S7 Determine the measurement result based on the electric field distribution and charge density distribution of the first 50% of the thickness of the dielectric film under test and the electric field distribution and charge density distribution of the first 50% of the thickness of the dielectric film under test.
  • the electric field distribution curve and the charge density distribution curve of the front trigger response current are obtained according to the front trigger response current signal;
  • the electric field distribution curve and the charge density distribution curve of the back trigger response current are obtained according to the back trigger response current signal, specifically include:
  • the Poisson equation is used to determine the charge density distribution curve of the reverse trigger response current according to the electric field distribution curve of the reverse trigger response current.
  • the present invention discloses the following technical effects:
  • the present invention proposes a double-sided measurement method based on the single-sided thermal pulse measurement technology, which solves the problem of the thermal pulse method's decreased resolution along the light incident direction and improves the measurement as a whole
  • the spatial resolution and has the advantages of simple and convenient operation.
  • FIG. 1 is a schematic structural diagram of a double-sided in-situ measurement system for charge distribution in a dielectric film provided by the present invention
  • FIG. 2 is a flowchart of a method for double-sided in-situ measurement of charge distribution in a dielectric film provided by the present invention
  • Fig. 3 is a schematic diagram of comparison between single-sided measurement and double-sided measurement results after data processing in the embodiment of the present invention.
  • the purpose of the present invention is to provide a double-sided in-situ measurement system and method for charge distribution in a dielectric film, so as to solve the problem that the resolution of the existing heat pulse method decreases in the direction of heat conduction.
  • Fig. 1 is a schematic structural diagram of a double-sided in-situ measurement system for charge distribution in a dielectric film provided by the present invention.
  • a double-sided in-situ measurement system for charge distribution in a dielectric film includes a sample 10, The pulse laser 1 and the photoelectric trigger circuit, the double-sided measuring optical circuit, the pressure circuit and the measuring circuit not shown in FIG. 1.
  • the sample 10 to be tested is a dielectric film with metalized electrodes vapor-deposited on both sides.
  • the sample 10 to be tested includes: a dielectric film to be tested and a front-side plating electrode 11 and a back-side plating electrode 12 arranged on both sides of the dielectric film to be tested.
  • the double-sided electrode of the dielectric film is metalized by magnetron sputtering or thermal evaporation to obtain the front-side plating electrode 11 and the back-side plating electrode 12.
  • the double-sided plated electrodes can be made of metals with good conductivity such as aluminum, gold, silver, etc., and the thickness is as thin as possible, subject to opacity.
  • the diameter of the front-side plating electrode 11 and the back-side plating electrode 12 are selected based on the principle that the capacitance of the dielectric film is relatively small without causing distortion of the measurement signal.
  • an 8 ⁇ m polyimide film is used, which is cut into a size of 5 cm ⁇ 5 cm, and a double-sided aluminum electrode with a diameter of 5 mm and a thickness of 180 nm is vapor-deposited in a vacuum coating apparatus by thermal evaporation.
  • the laser light generated by the pulse laser 1 is divided into two paths by the 1/9 beam splitter 5. One way, 10% of the laser light enters the photoelectric trigger circuit, and the other way, 90% of the laser light enters the double-sided measurement circuit.
  • the pulse laser 1 adopts a Nd:YAG solid-state laser with a light wavelength of 1064nm and a pulse width of about 6ns.
  • the energy reaching the sample film double-sided coating electrode is about 1.1-2.3mJ, which can make the coating The electrode will not be damaged under multiple laser strikes, and the signal to noise is better.
  • the above-mentioned photoelectric trigger circuit includes: a photodiode 2 and an oscilloscope.
  • the photoelectric trigger circuit takes 10% of the reflected light from the 1/9 beam splitter and irradiates the photodiode 2, which is connected to the oscilloscope, as the light trigger signal of the entire measurement system.
  • the double-sided measurement optical path includes: multiple mirrors.
  • the multiple emission mirrors are used to divide the laser light entering the double-sided measurement optical path into two paths, and are used to make the divided two paths of laser light enter the front coating electrode 11 and the back coating electrode 12 respectively.
  • the above-mentioned multiple reflecting mirrors are specifically: a first 45° reflecting mirror 6, a second 45° reflecting mirror 7, a third 45° reflecting mirror 8 and a fourth 45° reflecting mirror 9.
  • the double-sided measurement circuit provided in the present invention has two functions of front measurement and reverse measurement. Then, when the measurement is performed, the first 45° reflector 6 has the function of rotating and resetting.
  • the first 45° reflector 6 is arranged on the optical path of the incident laser as a switching point of the double-sided measurement optical path.
  • the front measurement optical path is directly composed of the second 45° reflector 7, which is placed parallel to the first 45° reflector 6, and is located directly in front of the light hole of the front (grounded) brass ring electrode. It is used for measurement.
  • the reflected light hits the front plated electrode 11 of the dielectric film.
  • the measurement light path on the reverse side is composed of the first 45° reflector 6, the third 45° reflector 8 and the fourth 45° reflector 9.
  • the third 45° reflector 8 and the first 45° reflector 6 are placed in parallel with each other.
  • the fourth 45° reflector 9 is placed vertically, and the fourth 45° reflector 9 is located directly in front of the light hole of the rear (pressurization/measurement) round brass ring electrode.
  • the reflection of the fourth 45° reflector 9 is used for measurement.
  • the light hits the reverse plating electrode 12 of the dielectric film.
  • the double-sided measurement optical path must ensure that the laser energy reaching the double-sided coating electrode of the dielectric film is approximately the same. The energy should be adjusted to about 1.1-2.3mJ, so that the coating electrode will not be damaged under multiple laser strikes, and the signal amplitude The value is higher.
  • the pressurizing circuit includes: a DC high voltage source 16, a first ground terminal 17, a second ground terminal 15, a coupling capacitor C, a single-pole double-throw switch 13, a protection circuit 14 and a current limiting resistor R.
  • the DC high voltage source 16 is connected to the reverse plating electrode 12 through a current limiting resistor R.
  • the reverse plating electrode 12 is also connected to the moving end of the single-pole double-throw switch 13 through a coupling capacitor C.
  • the first fixed terminal of the single-pole double-throw switch 13 is connected to the second ground terminal 15.
  • the second fixed end of the single-pole double-throw switch 13 is connected to the protection circuit 14.
  • the front surface plating electrode 11 is connected to the first ground terminal 17.
  • the protection circuit 14 is connected to the measurement circuit.
  • the resistance value of the current limiting resistor R It needs to be much smaller than the insulation resistance of the sample 10 to be tested.
  • the coupling capacitor C is used to isolate the DC high voltage on the one hand, and for signal coupling on the other hand.
  • the single-pole double-throw switch 13 is located between the coupling capacitor C and the protection circuit 14, and is used to connect and disconnect the capacitor C and the measurement circuit, and can switch between grounding and measurement.
  • the protection circuit 14 is connected to the measurement circuit and mainly functions to protect the measurement circuit.
  • the coupling capacitor C is required to be more than 100 times larger than the sample capacitor.
  • the coupling capacitor C uses a high-voltage ceramic capacitor of 20 nF.
  • the measurement circuit is composed of amplifier 4 and oscilloscope 3, and the output end of amplifier 4 is connected to oscilloscope 3.
  • the input terminal of the amplifier 4 is connected to the protection circuit 14.
  • the amplifier 4 is specifically a pre-current amplifier, specifically a low-noise pre-current amplifier with a bandwidth of DC-300kHz, a low-frequency gain of 2 ⁇ 10 6 V/A, and The input resistance is less than 10 ⁇ .
  • Oscilloscope 3 is used to display and record displacement current signals.
  • the oscilloscope 3 uses a digital oscilloscope, and at the same time acts as an oscilloscope in the photoelectric trigger circuit.
  • a ring electrode is used in the process of measuring the sample 10 to be tested.
  • the ring electrodes are respectively connected to the front plating electrode 11 and the back plating electrode 12, and the ring electrodes are arranged concentrically with the front plating electrode 11 and the back plating electrode 12.
  • the provided ring electrodes are preferably a pair of brass ring electrodes with light holes.
  • the dielectric film with double-sided coating electrodes is clamped by two brass ring electrodes.
  • the double-sided coating electrodes (front-side coating electrode 11 and back-side coating electrode 12) of the sample 10 to be tested should be the same as the previous ,
  • the rear brass ring electrode is tightly attached, and the center of the dielectric film double-sided plating electrode (front plating electrode 11 and back plating electrode 12) is on the same axis as the center of the light hole of the two ring brass electrodes. In order to ensure that the laser can hit perpendicularly to the double-sided coating electrode of the dielectric film.
  • the ring electrode on the front is the ground electrode
  • the ring electrode on the back is the pressure/measurement electrode.
  • the electrode in contact with the sample in the ground-side brass electrode is a small electrode with an electrode diameter of 5 mm, which is in line with the diameter of the sample vapor-deposited aluminum electrode, and the diameter of the light hole is 2 mm.
  • the electrode in contact with the sample in the pressure/measurement end ring electrode is a large electrode, the diameter of the electrode is 5cm, and the diameter of the light hole is 2mm.
  • an electrode clamp is used to clamp the dielectric film with double-sided plating electrodes and two brass ring electrodes.
  • the electrode fixture used is not limited to the brass ring electrode fixture in this embodiment. It only needs to meet the requirements that the laser can strike the metalized electrodes on both sides of the dielectric film vertically, and ensure that the capacitance of the sample 10 to be tested is not less than Too large and cause signal distortion.
  • a shielding box 18 with good shielding effect may also be included.
  • the sample 10 the coupling capacitor C, the single-pole double-throw switch 13, the protection circuit 14 and the current-limiting resistor R are all arranged in a shielding box 18 (dotted frame).
  • the present invention also correspondingly provides a measurement method for double-sided in-situ measurement using the above-mentioned double-sided in-situ measurement system for charge distribution in the dielectric film.
  • the measurement method includes the following steps:
  • Both the front surface coating electrode 11 and the back surface coating electrode 12 of the sample 10 to be tested are applied with DC high voltage.
  • the laser generated by the pulse laser 1 is divided into two channels. One is to use the photoelectric trigger circuit to trigger the oscilloscope 3 to collect signals, and the other is to obtain the positive trigger response current signal and the reverse trigger response through the double-sided measurement optical path and the measurement circuit.
  • the current signal is displayed by the oscilloscope 3 on the front trigger response current signal and the back trigger response current signal.
  • S6 Determine the electric field distribution and the charge density distribution of the first 50% of the thickness of the dielectric film to be tested on the front side according to the electric field distribution curve and the charge density distribution curve of the front surface trigger response current. According to the electric field distribution curve and the charge density distribution curve of the reverse trigger response current, the electric field distribution and the charge density distribution of the first 50% of the thickness of the dielectric film under test are determined.
  • S7 Determine the measurement result based on the electric field distribution and charge density distribution of the first 50% of the thickness of the dielectric film under test and the electric field distribution and charge density distribution of the first 50% of the thickness of the dielectric film under test.
  • step S5 the scale transformation method is used to perform deconvolution calculations on the collected positive and negative trigger response current signals.
  • the respective electric field distributions are first obtained, and then the charge density distribution is obtained based on the Poisson equation.
  • the electric field distribution and the charge density distribution of 50% of the dielectric film thickness are combined on both sides.
  • the deconvolution algorithm of this embodiment is not limited to the scale transformation method, and Monte Carlo method (Monte Carlo method), Tikhonov regularization method (Tikhonov regularization), etc. are all applicable.
  • the measurement process is specifically as follows:
  • the double-sided metalized electrode of the sample 10 to be tested is applied with DC high voltage, which can be realized by applying a pressure circuit to the back (pressurized) brass ring electrode, and the front (grounded) brass ring electrode is passed through the shielding box 18 The case is grounded.
  • DC high voltage which can be realized by applying a pressure circuit to the back (pressurized) brass ring electrode, and the front (grounded) brass ring electrode is passed through the shielding box 18 The case is grounded.
  • the average DC electric field applied to the sample is 10kV/mm, but the applied electric field is not limited to 10kV/mm, as long as it meets a suitable signal-to-noise ratio.
  • the first 45° reflector 6 When measuring from the front, the first 45° reflector 6 with the function of rotating and resetting at the rotation switching point makes 90% of the transmitted light of the 1/9 beam splitter directly irradiate on the second 45° reflector 7.
  • the pulsed laser is absorbed by the metal target electrode and converted into a heat pulse.
  • the heat pulse is conducted in the incident direction and generates thermal deformation at the path position, thereby generating a displacement current.
  • the displacement current passes through the circuit.
  • the coupling capacitor C, the single-pole double-throw switch 13, the protection circuit 14 to the pre-current amplifier 4 are displayed and recorded by the oscilloscope 3.
  • the first 45° reflector 6 with the function of rotating and resetting at the reset switching point makes 90% of the transmitted light irradiate directly to the third 45° reflector 8 through the first 45° reflector 6, whichever is reflected
  • the light is incident on the fourth 45° reflector 9, and finally the reflected light of the fourth 45° reflector 9 hits the reverse plating electrode 12 of the dielectric film, and the generated displacement current signal is also sent to the current amplifier 4 through the above circuit
  • the record is displayed by the oscilloscope 3.
  • an electric field of 10 kV/mm is applied to an 8 ⁇ m polyimide film, and the obtained single-sided measurement and double-sided measurement electric field distribution curves are shown in FIG. 3. Since the embodiment applies an external electric field of 10 kV/mm to the polyimide film sample, this electric field is far smaller than the charge injection threshold field strength of the polyimide film sample, so the internal electric field of the sample should be equal to the applied electric field. It can be seen from Fig. 3 that the electric field has gradually moved away from the 10kV/mm scale line when the thickness of the film is greater than 4 ⁇ m. For the double-sided measurement results, the electric field basically coincides with the 10kV/mm scale line across the thickness of the sample. It can be explained that the double-sided in-situ measurement system and method of charge distribution in dielectric films based on the thermal pulse method proposed in this application can effectively avoid the problem of the resolution of thermal pulses in the conduction direction and improve the accuracy of data collection. .

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Abstract

一种电介质薄膜中电荷分布的双面原位测量系统及方法。双面原位测量系统包括待测样品（10）、脉冲激光器（1）、光电触发电路、双面测量光路、加压电路和测量电路；其中，脉冲激光器（1）产生的激光被分为两路，分别进入光电触发电路和双面测量光路中；双面测量光路将激光分两路依次分别入射到正面镀层电极（11）和反面镀层电极（12）；加压电路包括直流高压源，并通过限流电阻施加至电介质薄膜的反面镀层电极（12）上，反面镀层电极（12）还通过耦合电容连接单刀双掷开关的动端，两个不动端分别连接地和保护电路，保护电路与测量电路连接，正面镀层电极（11）接地。与现有技术相比，提供的技术方案减小了热脉冲法在沿光入射方向上分辨率下降的问题，从整体上提高测量的空间分辨率。

Description

一种电介质薄膜中电荷分布的双面原位测量系统及方法
本申请要求于2019年5月29日提交中国专利局、申请号为201910458938.0、发明名称为“一种电介质薄膜中电荷分布的双面原位测量系统及方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及电介质薄膜中电荷分布的测量技术，尤其是涉及一种基于热脉冲法的电介质薄膜中电荷分布的双面原位测量系统及方法。
背景技术
电介质薄膜具有很多的优点，如良好的绝缘性能、抗机械应力强、耐压耐温高、重量轻等，因此被广泛的用作电容器等电气设备的绝缘介质层。在外加直流高电场下，介质薄膜内部的空间电荷积累现象不容忽视，积累的电荷会使介质内部原本均匀的电场发生畸变，影响电容器等电气设备运行的安全性和可靠性。
热脉冲法是一种测量介质薄膜电场及空间电荷密度的方法，其基本原理是激光脉冲照射到介质薄膜表面的金属化电极上，金属化电极吸收部分光脉冲的能量后转化为热脉冲，热脉冲沿着光入射方向，向介质薄膜内部传导，由于非均匀的温度变化，内部的空间电荷随样品局部形变发生微小位移，引起电极上感应电荷量的变化，从而在外电路中产生微弱的电流，分析电流信号就可获得介质薄膜电场及电荷密度分布。热脉冲法具有在介质薄膜受热表面附近分辨率高的特点，适用于厚度在几微米和几十微米介质薄膜中的电场与电荷分布的测量。
现有技术中，压力波法和电声脉冲法也被广泛的用于测量介质薄膜电场及电荷密度分布。但不同于热脉冲法，压力波法和电声脉冲法是以声波的形式在介质薄膜内部传播。在传播过程中，虽然波形几乎保持不变，但整体分辨率不及热脉冲法的分辨率。一般情况下，压力波法和电声脉冲法的分辨率为数十微米，只适合测量几百微米厚度以上的介质薄膜。
热脉冲法的分辨率与热脉冲传导至介质薄膜内部相应处的脉宽有关，脉宽越窄，分辨率越高。但热脉冲波形在传导过程中表现为脉宽变宽，幅值变低，导致分辨率沿传导方向迅速降低。因此，当只通过对介质薄膜进行单面测量时，测量分辨率在前一半厚度范围内要远高于后一半，不利于后期对数据的分析处理。
发明内容
本发明的目的是提供一种介质薄膜中电荷分布的双面原位测量系统及方法，以解决现有热脉冲法存在沿热传导方向上分辨率下降的问题。
为实现上述目的，本发明提供了如下方案：
一种电介质薄膜中电荷分布的双面原位测量系统，包括待测样品、脉冲激光器、光电触发电路、双面测量光路、加压电路和测量电路；
所述待测样品包括：待测电介质薄膜和设置在所述待测电介质薄膜两侧的正面镀层电极和反面镀层电极；
所述脉冲激光器产生的激光被分为两路，一路激光进入所述光电触发电路中，另一路激光进入所述双面测量光路中；
所述光电触发电路包括：光电二极管和示波器；所述光电二极管和所述示波器连接；
所述双面测量光路包括：多个反射镜；多个所述发射镜用于将进入所述双面测量光路的激光分为两路，并用于使分路后的两路激光分别入射到所述正面镀层电极和所述反面镀层电极；
所述加压电路包括：直流高压源、第一接地端、第二接地端、耦合电容、单刀双掷开关和保护电路；所述直流高压源与所述反面镀层电极连接；所述反面镀层电极还通过所述耦合电容与所述单刀双掷开关的动端连接；所述单刀双掷开关的第一不动端与所述第二接地端连接；所述单刀双掷开关的第二不动端与所述保护电路连接；所述正面镀层电极与所述第一接地端连接；所述保护电路与测量电路连接。
优选的，还包括：1/9分束镜；
所述脉冲激光器产生的激光通过所述1/9分束镜分为两路，其中一路有10％的激光进入所述光电触发电路，另一路有90％的激光进入所述双面测量电路。
优选的，多个所述反射镜具体为：第一45°反射镜、第二45°反射镜、第三45°反射镜和第四45°反射镜；所述第一45°反射镜具有可旋离复位功能并作为双面测量光路的切换点；
所述双面测量电路具有正面测量和反面测量两种功能；当进行正面测量时，旋离所述第一45°反射镜，入射激光直接经过所述第二45°反射镜入射到所述正面镀层电极；当进行反面测量时，复位所述第一45°反射镜，入射激光依次经过所述第一45°反射镜、第三45°反射镜和第四45°反射镜后入射到所述反面镀层电极。
优选的，所述加压电路还包括：限流电阻；
所述直流高压源通过所述限流电阻与所述反面镀层电极连接。
优选的，所述限流电阻的阻值小于所述待测样品的绝缘电阻。
优选的，所述测量电路包括：放大器；
所述放大器的输出端和所述示波器连接；所述放大器的输入端与所述保护电路连接。
优选的，还包括：圆环电极；
所述圆环电极分别与所述正面镀层电极和所述反面镀层电极连接，且所述圆环电极与所述正面镀层电极和所述所述反面镀层电极保持同心设置。
优选的，所述耦合电容的电容值大于等于待测样品电容值的100倍。
一种电介质薄膜中电荷分布的双面原位测量方法，所述双面原位测量方法为采用上述电介质薄膜中电荷分布的双面原位测量系统进行双面原位测量的测量方法；所述双面原位测量方法，包括：
S1、将单刀双掷开关的动端接地；
S2、对待测样品的正面镀层电极和反面镀层电极均施加直流高压；
S3、当所述待测样品中无电流流过时，将所述单刀双掷开关的动端与测量电路连接；
S4、开启脉冲激光器，所述脉冲激光器产生的激光分为两路，一路经光电触发电路触发示波器采集信号，另一路依次通过双面测量光路和测量电路得到正面触发响应电流信号和反面触发响应电流信号，并由示波器对正面触发响应电流信号和反面触发响应电流信号进行显示；
S5、根据所述正面触发响应电流信号得到正面触发响应电流的电场 分布曲线和电荷密度分布曲线；根据所述反面触发响应电流信号得到反面触发响应电流的电场分布曲线和电荷密度分布曲线；
S6、根据所述正面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布；根据所述反面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布；
S7：根据待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布和待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布确定测量结果。
优选的，所述根据正面触发响应电流信号得到正面触发响应电流的电场分布曲线和电荷密度分布曲线；根据所述反面触发响应电流信号得到反面触发响应电流的电场分布曲线和电荷密度分布曲线，具体包括：
采用反卷积算法，根据正面触发响应电流信号得到正面触发响应电流的电场分布曲线；
采用泊松方程，根据所述正面触发响应电流的电场分布曲线确定正面触发响应电流的电荷密度分布曲线；
采用反卷积算法，根据反面触发响应电流信号得到反面触发响应电流的电场分布曲线；
采用泊松方程，根据所述反面触发响应电流的电场分布曲线确定反面触发响应电流的电荷密度分布曲线。
根据本发明提供的具体实施例，本发明公开了以下技术效果：
1、在电介质薄膜电场及电荷密度测量领域，本发明基于单面热脉冲 测量技术，提出双面测量方法，解决了热脉冲法在沿光入射方向上分辨率下降的问题，从整体上提高测量的空间分辨率，且具有操作简单方便的优点。
2、能够在不翻转样品的情况下实现热脉冲法的在线双面测量，即能实现样品的原位测量，有效地防止了翻转操作对样品薄膜造成的损伤，使得测量结果更为准确。
说明书附图
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明提供的电介质薄膜中电荷分布的双面原位测量系统的结构示意图；
图2为本发明提供的电介质薄膜中电荷分布的双面原位测量方法的流程图；
图3本发明实施例中数据处理后，单面测量与双面测量结果的比较示意图。
附图符号说明：1-脉冲激光器，2-光电二极管，3-示波器，4-放大器，5-1/9分束镜，6-第一45°反射镜，7-第二45°反射镜，8-第三45°反射镜，9-第四45°反射镜，10-待测样品，11-正面镀层电极，12-反面镀层电极，C-耦合电容，R-限流电阻，13-单刀双掷开关，14-保护电路，15-第二接地端，16-直流高压源，17-第一接地端，18-屏蔽盒。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的目的是提供一种介质薄膜中电荷分布的双面原位测量系统及方法，以解决现有热脉冲法存在沿热传导方向上分辨率下降的问题。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1为本发明提供的电介质薄膜中电荷分布的双面原位测量系统的结构示意图，如图1所示，一种电介质薄膜中电荷分布的双面原位测量系统，包括待测样品10、脉冲激光器1以及图1中未示出的光电触发电路、双面测量光路和加压电路和测量电路。
待测样品10为双面分别蒸镀有金属化电极的电介质薄膜。待测样品10包括：待测电介质薄膜和设置在待测电介质薄膜两侧的正面镀层电极11和反面镀层电极12。
其中，在本发明所提供的实施例中，采用磁控溅射或热蒸发的方式金属化电介质薄膜双面电极，得到正面镀层电极11和反面镀层电极12。双面镀层电极(正面镀层电极11和反面镀层电极12)可以是铝、金、银等导电性较好的金属，厚度在尽可能薄的情况下，以不透光为准。正面镀层电极11和反面镀层电极12直径的选择以使电介质薄膜电容量比较小而不 造成测量信号失真为原则。本实施例采用8μm的聚酰亚胺薄膜，将其裁剪为尺寸5cm×5cm的大小，并在真空镀膜仪中以热蒸发的方式蒸镀直径为5mm、厚度为180nm的双面铝电极。
脉冲激光器1产生的激光被1/9分束镜5分为两路。其中一路有10％的激光进入光电触发电路，另一路有90％的激光进入双面测量电路。
在本发明提供的实施例中，脉冲激光器1采用Nd:YAG固体激光器，光波长为1064nm，脉冲宽度为6ns左右，到达样品薄膜双面镀层电极上的能量在1.1～2.3mJ左右，可使镀层电极在多次激光的击打下不至受损，且信噪比较好。
上述光电触发电路包括：光电二极管2和示波器。光电触发电路取1/9分束镜10％的反射光照射到光电二极管2上，光电二极管2和所述示波器连接，以作为整个测量系统的光触发信号。
双面测量光路包括：多个反射镜。多个发射镜用于将进入双面测量光路的激光分为两路，并用于使分路后的两路激光分别入射到正面镀层电极11和反面镀层电极12。
作为本发明的另一实施例，上述多个反射镜具体为：第一45°反射镜6、第二45°反射镜7、第三45°反射镜8和第四45°反射镜9。
因在本发明提供的双面测量电路具有正面测量和反面测量两种功能。那么，在进行测量时，第一45°反射镜6具有可旋离复位功能。第一45°反射镜6作为双面测量光路的切换点设置在入射激光的光路上。正面测量光路直接由第二45°反射镜7组成，其与第一45°反射镜6呈平行放置，且位于前(接地)黄铜圆环电极通光孔的正前方位置，测量时采用其反射光 击打电介质薄膜的正面镀层电极11。反面测量光路由第一45°反射镜6、第三45°反射镜8和第四45°反射镜9组成，第三45°反射镜8与第一45°反射镜6呈平行放置，且与第四45°反射镜9呈垂直放置，第四45°反射镜9位于后(加压/测量)圆黄铜环电极通光孔的正前方，测量时采用第四45°反射镜9的反射光来击打电介质薄膜的反面镀层电极12。双面测量光路必须保证到达电介质薄膜双面镀层电极上的激光能量大致相同，能量调整在1.1～2.3mJ左右为宜，可使镀层电极在多次激光的击打下不至受损，且信号幅值较高。
加压电路包括：直流高压源16、第一接地端17、第二接地端15、耦合电容C、单刀双掷开关13、保护电路14和限流电阻R。直流高压源16通过限流电阻R与反面镀层电极12连接。反面镀层电极12还通过耦合电容C与单刀双掷开关13的动端连接。单刀双掷开关13的第一不动端与第二接地端15连接。单刀双掷开关13的第二不动端与保护电路14连接。正面镀层电极11与第一接地端17连接。保护电路14与测量电路连接。
其中，为了防止待测样品10被击穿时因电流过大而对放大器4及高压源造成损坏，减小分压效应，使直流高压能完全加到样品两侧，限流电阻R的阻值需要远小于待测样品10的绝缘电阻。
耦合电容C一方面用于隔离直流高压，一方面用于信号耦合。单刀双掷开关13位于耦合电容C和保护电路14之间，用于接通和断开电容C与测量电路的连接，可在接地和测量之间进行切换。保护电路14与测量电路相连，主要起保护测量电路的作用。
在本发明提供的实施例中，因为聚酰亚胺薄膜的绝缘电阻在TΩ(10 12Ω)级别以上，所以限流电阻R的取值为300MΩ。为了保证样品为一个电流源，要求耦合电容C要比样品电容大100倍以上，本实施例中，耦合电容C采用了20nF的高压陶瓷电容。
测量电路由放大器4和示波器3组成，放大器4的输出端和示波器3连接。放大器4的输入端与保护电路14连接。
在本发明提供的实施例中，放大器4具体为前置电流放大器，具体采用的是低噪声的前置电流放大器，其带宽为DC-300kHz，低频增益为2×10 6V/A，且其输入电阻小于10Ω。示波器3用于显示和记录位移电流信号。该示波器3采用数字示波器，同时作为光电触发电路中的示波器。
在本发明所提供的电介质薄膜中电荷分布的双面原位测量系统，在对待测样品10进行测量的过程中，采用的是圆环电极。圆环电极分别与正面镀层电极11和反面镀层电极12连接，且圆环电极与正面镀层电极11和反面镀层电极12保持同心设置。在本发明所提供的实施例中，所提供的圆环电极优选为一对具有通光孔的黄铜圆环电极。
采用圆环电极进行测量时，具有双面镀层电极的电介质薄膜被两个黄铜圆环电极夹紧，待测样品10的双面镀层电极(正面镀层电极11和反面镀层电极12)要与前、后面黄铜圆环电极紧密贴合，并保证电介质薄膜双面镀层电极(正面镀层电极11和反面镀层电极12)的中心与两个圆环黄铜电极的通光孔中心位于同一轴线上，以保证激光能够垂直击打到电介质薄膜的双面镀层电极上。
具体的，设置在前面的圆环电极为接地电极，后面的圆环电极为加压 /测量电极。接地侧黄铜电极中与样品接触的电极为小电极，电极直径为5mm，符合样品蒸镀铝电极的直径尺寸，通光孔直径为2mm。加压/测量端圆环电极中与样品接触的电极为大电极，电极直径为5cm，通光孔直径为2mm。
在本发明提供的实施例中采用电极夹具将具有双面镀层电极的电介质薄膜和两个黄铜圆环电极进行夹紧。所采用的电极夹具不局限于本实施例中的黄铜圆环电极夹具，只需满足激光能分别垂直击打到电介质薄膜两面的金属化电极上，并保证待测样品10的电容量不至于过大而造成信号失真即可。
本发明提供的双面测量系统中，除了外部的测量线路外，为了提高测量精度，还可以包括有一个屏蔽效果良好的屏蔽盒18。如图1所示，在本发明实施例中，待测样品10、耦合电容C、单刀双掷开关13、保护电路14和限流电阻R均设置于屏蔽盒18(虚线框)内。
此外，本发明还对应提供了一种采用上述电介质薄膜中电荷分布的双面原位测量系统进行双面原位测量的测量方法，如图2所示，该测量方法包括以下步骤：
S1、将单刀双掷开关13的动端接地。
S2、对待测样品10的正面镀层电极11和反面镀层电极12均施加直流高压。
S3、当待测样品10中无电流流过时，将单刀双掷开关13的动端与测量电路连接。
S4、开启脉冲激光器1，脉冲激光器1产生的激光分为两路，一路经 光电触发电路触发示波器3采集信号，另一路依次通过双面测量光路和测量电路得到正面触发响应电流信号和反面触发响应电流信号，并由示波器3对正面触发响应电流信号和反面触发响应电流信号进行显示。
S5、根据正面触发响应电流信号得到正面触发响应电流的电场分布曲线和电荷密度分布曲线。根据反面触发响应电流信号得到反面触发响应电流的电场分布曲线和电荷密度分布曲线。
S6、根据正面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布。根据反面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布。
S7：根据待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布和待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布确定测量结果。
本实施例中，步骤S5中采用尺度变换法对采集到的正、反面触发响应电流信号进行反卷积计算，先获得各自的电场分布，基于泊松方程再获得电荷密度分布，最后对正、反两面前50％电介质薄膜厚度的电场分布及电荷密度分布进行组合。本实施例的反卷积算法不局限于尺度变换法，蒙特卡洛法(Monte Carlo法)、吉洪诺夫正则化法(Tikhonov regularization)等均适用。
本实施例中，测量过程具体如下：
(1)将单刀双掷开关13的动端接地。
(2)待测样品10的双面金属化电极外加直流高压，其可通过加压电路 作用于后面(加压)黄铜圆环电极来实现，前面(接地)黄铜圆环电极经屏蔽盒18外壳接地。本实例中给样品施加的直流电场平均为10kV/mm，但施加的电场不局限于10kV/mm，只要其满足合适的信噪比即可。
(3)检测待测样品10两侧是否有电流流过，若无，则将单刀双掷开关13的动端接保护电路14并进行双面测量。
(4)打开脉冲激光器1，脉冲激光器1发出的激光先平行入射到呈45°放置的1/9分束镜上，取10％反射光用作测量系统的光触发信号。
正面测量时，旋离切换点处具有旋离复位功能的第一45°反射镜6，使1/9分束镜90％的透射光直接照射到第二45°反射镜7上，经过反射击打到电介质薄膜的正面镀层电极11上，脉冲激光被金属靶电极吸收后转化为热脉冲，热脉冲在入射方向上传导并在途径位置处产生热形变，从而产生位移电流，该位移电流经电路中的耦合电容C、单刀双掷开关13、保护电路14至前置电流放大器4并由示波器3显示记录。反面测量时，复位切换点处具有旋离复位功能的第一45°反射镜6使90％的透射光经第一45°反射镜6直接照射到第三45°反射镜8上，取其反射光入射到第四45°反射镜9上，最后取第四45°反射镜9的反射光击打到电介质薄膜的反面镀层电极12上，产生的位移电流信号同样经上述电路至电流放大器4并由示波器3显示记录。
本实施例对8μm聚酰亚胺薄膜施加10kV/mm的电场，得到的单面测量及双面测量电场分布曲线如图3所示。由于实施例对聚酰亚胺薄膜样品施加的是10kV/mm的外加电场，此电场远远小于聚酰亚胺薄膜样品的电荷注入阈值场强，因此样品内部电场应等于外施电场。从图3中可以看出， 单面测量的结果在薄膜厚度大于4μm的情况下，电场已逐渐远离10kV/mm的刻度线。而对于双面测量结果而言，在整个样品厚度上，电场基本吻合于10kV/mm的刻度线。由此可以说明本申请所提出的基于热脉冲法的电介质薄膜中电荷分布的双面原位测量系统和方法可以有效避免热脉冲在传导方向上分辨率下降的问题，提高了数据采集的正确性。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处。综上所述，本说明书内容不应理解为对本发明的限制。

Claims (10)

  1. 一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，包括待测样品、脉冲激光器、光电触发电路、双面测量光路、加压电路和测量电路；
    所述待测样品包括：待测电介质薄膜和设置在所述待测电介质薄膜两侧的正面镀层电极和反面镀层电极；
    所述脉冲激光器产生的激光被分为两路，一路激光进入所述光电触发电路中，另一路激光进入所述双面测量光路中；
    所述光电触发电路包括：光电二极管和示波器；所述光电二极管和所述示波器连接；
    所述双面测量光路包括：多个反射镜；多个所述发射镜用于将进入所述双面测量光路的激光分为两路，并用于使分路后的两路激光分别入射到所述正面镀层电极和所述反面镀层电极；
    所述加压电路包括：直流高压源、第一接地端、第二接地端、耦合电容、单刀双掷开关和保护电路；所述直流高压源与所述反面镀层电极连接；所述反面镀层电极还通过所述耦合电容与所述单刀双掷开关的动端连接；所述单刀双掷开关的第一不动端与所述第二接地端连接；所述单刀双掷开关的第二不动端与所述保护电路连接；所述正面镀层电极与所述第一接地端连接；所述保护电路与测量电路连接。
  2. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，还包括：1/9分束镜；
    所述脉冲激光器产生的激光通过所述1/9分束镜分为两路，其中一路有10％的激光进入所述光电触发电路，另一路有90％的激光进入所述双 面测量电路。
  3. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，多个所述反射镜具体为：第一45°反射镜、第二45°反射镜、第三45°反射镜和第四45°反射镜；所述第一45°反射镜具有可旋离复位功能并作为双面测量光路的切换点；
    所述双面测量电路具有正面测量和反面测量两种功能；当进行正面测量时，旋离所述第一45°反射镜，入射激光直接经过所述第二45°反射镜入射到所述正面镀层电极；当进行反面测量时，复位所述第一45°反射镜，入射激光依次经过所述第一45°反射镜、第三45°反射镜和第四45°反射镜后入射到所述反面镀层电极。
  4. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，所述加压电路还包括：限流电阻；
    所述直流高压源通过所述限流电阻与所述反面镀层电极连接。
  5. 根据权利要求4所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，所述限流电阻的阻值小于所述待测样品的绝缘电阻。
  6. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，所述测量电路包括：放大器；
    所述放大器的输出端和所述示波器连接；所述放大器的输入端与所述保护电路连接。
  7. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，还包括：圆环电极；
    所述圆环电极分别与所述正面镀层电极和所述反面镀层电极连接，且 所述圆环电极与所述正面镀层电极和所述所述反面镀层电极保持同心设置。
  8. 根据权利要求1所述的一种电介质薄膜中电荷分布的双面原位测量系统，其特征在于，所述耦合电容的电容值大于等于待测样品电容值的100倍。
  9. 一种电介质薄膜中电荷分布的双面原位测量方法，其特征在于，所述双面原位测量方法为采用如权利要求1～8任一项所述的电介质薄膜中电荷分布的双面原位测量系统进行双面原位测量的测量方法；所述双面原位测量方法，包括：
    S1、将单刀双掷开关的动端接地；
    S2、对待测样品的正面镀层电极和反面镀层电极均施加直流高压；
    S3、当所述待测样品中无电流流过时，将所述单刀双掷开关的动端与测量电路连接；
    S4、开启脉冲激光器，所述脉冲激光器产生的激光分为两路，一路经光电触发电路触发示波器采集信号，另一路依次通过双面测量光路和测量电路得到正面触发响应电流信号和反面触发响应电流信号，并由示波器对正面触发响应电流信号和反面触发响应电流信号进行显示；
    S5、根据所述正面触发响应电流信号得到正面触发响应电流的电场分布曲线和电荷密度分布曲线；根据所述反面触发响应电流信号得到反面触发响应电流的电场分布曲线和电荷密度分布曲线；
    S6、根据所述正面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布； 根据所述反面触发响应电流的电场分布曲线和电荷密度分布曲线确定待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布；
    S7：根据待测电介质薄膜正面的前50％厚度的电场分布及电荷密度分布和待测电介质薄膜反面的前50％厚度的电场分布及电荷密度分布确定测量结果。
  10. 根据权利要求9所述的一种电介质薄膜中电荷分布的双面原位测量方法，其特征在于，所述根据正面触发响应电流信号得到正面触发响应电流的电场分布曲线和电荷密度分布曲线；根据所述反面触发响应电流信号得到反面触发响应电流的电场分布曲线和电荷密度分布曲线，具体包括：
    采用反卷积算法，根据正面触发响应电流信号得到正面触发响应电流的电场分布曲线；
    采用泊松方程，根据所述正面触发响应电流的电场分布曲线确定正面触发响应电流的电荷密度分布曲线；
    采用反卷积算法，根据反面触发响应电流信号得到反面触发响应电流的电场分布曲线；
    采用泊松方程，根据所述反面触发响应电流的电场分布曲线确定反面触发响应电流的电荷密度分布曲线。
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