WO2020228498A1 - 一种芯片式三维磁场传感器 - Google Patents

一种芯片式三维磁场传感器 Download PDF

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WO2020228498A1
WO2020228498A1 PCT/CN2020/086127 CN2020086127W WO2020228498A1 WO 2020228498 A1 WO2020228498 A1 WO 2020228498A1 CN 2020086127 W CN2020086127 W CN 2020086127W WO 2020228498 A1 WO2020228498 A1 WO 2020228498A1
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waveguide
type
magneto
polarized light
straight
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French (fr)
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佘玄
姚俊杰
陈侃
黄腾超
舒晓武
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Zhejiang University
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Zhejiang University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G01R33/0322—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect using the Faraday or Voigt effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers

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  • the invention belongs to the field of integrated optics and magnetic field sensing, and particularly relates to a chip type three-dimensional magnetic field sensor.
  • Magnetic field sensors play an important role in many fields such as daily transportation, geophysics, military defense, and biomedicine.
  • the aircraft adopts magnetic field sensors to achieve highly reliable contactless information exchange to ensure high flight safety; all kinds of mine resources such as steel, rare metals and non-ferrous metals can be located by magnetic field sensors, thereby greatly reducing prospecting costs;
  • magnetic field sensors After people's continuous exploration, a large number of different types of magnetic field sensors have been developed and put into use. Throughout all magnetic field sensors, the magnetic field sensitivity of Hall devices and magnetoresistive sensors is relatively low. The magnetic field sensitivity of coil sensors, fluxgates, proton magnetometers, optical pumps and superconducting quantum interferometers are all high, at 10-9T the above. Among high-sensitivity magnetic field sensors, coil sensors have certain limitations. They can only measure dynamically changing magnetic fields with a high rate of change, but cannot measure DC magnetic fields or magnetic fields with a low rate of change. Fluxgate and proton magnetometer consume very serious energy, and their frequency is limited by their own principles and cannot adapt to the development trend of high frequency.
  • Optical pumps are larger in size, more expensive, consume more energy (a few watts), and are inconvenient to maintain.
  • the highest sensitivity of superconducting quantum interferometer is 10-15T, but it requires a low temperature and harsh environment and can only be used in the laboratory. With the continuous development of technology, people urgently need to develop more excellent magnetic field sensors, such as higher sensitivity, higher frequency, lower energy consumption, higher stability, and smaller size.
  • the present invention provides a chip-type three-dimensional magnetic field sensor with three-axis monolithic integration, high integration, small size, simple preparation process, and easy packaging.
  • the invention includes a light source, an input straight waveguide, a polarization beam splitting waveguide, a 1:1 power beam splitter, three 1:2 Y waveguides, three 2:1 Y waveguides, three output straight waveguides, and three magneto-optical Waveguide and three photodetectors; three 1:2 type Y waveguides are the first 2:1 type Y waveguide, the second 2:1 type Y waveguide and the third 2:1 type Y waveguide, three 2:1 Type Y waveguides are the first 2:1 type Y waveguide, the second 2:1 type Y waveguide, and the third 2:1 type Y waveguide.
  • the three output straight waveguides are the first output straight waveguide and the second output straight waveguide.
  • the three magneto-optical waveguides are the first magneto-optical waveguide, the second magneto-optical waveguide, and the third magneto-optical waveguide, and the three photodetectors are the first photodetector and the second photodetector. And the third photodetector;
  • the input straight waveguide is connected to the input port of the polarization beam splitting waveguide, and one output port of the polarization beam splitting waveguide is connected to the first through the first 1:2 Y waveguide, the first 2:1 Y waveguide, and the first output straight waveguide.
  • the photodetector is used as a sensing axis, and the two output ports of the first 1:2 type Y waveguide are respectively connected to the two input ports of the first 2:1 type Y waveguide via the first magneto-optical waveguide and the first straight waveguide;
  • the other output port of the polarization beam splitting waveguide is connected to the input port of the 1:1 power splitter.
  • One output port of the 1:1 power splitter passes through the second 1:2 type Y waveguide and the second 2:1 type in turn
  • the Y waveguide and the second output straight waveguide are connected to the second photodetector as a sensing axis, and the two output ports of the second 1:2 type Y waveguide are respectively connected to the second through the second magneto-optical waveguide and the second straight waveguide.
  • the two output ports of the third 1:2 Y-waveguide are respectively connected to the two output ports of the third 2:1 Y-waveguide via the third magneto-optical waveguide and the third modulation electrode.
  • the light source outputs broad-spectrum depolarized light to the input straight waveguide, which is divided into TE polarized light and TM polarized light by the polarization splitting waveguide, and both TE polarized light and TM polarized light propagate in the horizontal direction; TE polarized light passes through the first 1:2 type
  • the Y waveguide is divided into two TE polarized light beams of equal power. One TE polarized light beam is branched on the first 1:2 Y waveguide, the first magneto-optical waveguide, and the first 2:1 Y waveguide.
  • the other beam of TE polarized light which is branched down by the first 1:2 type Y waveguide, the first straight waveguide, and the first 2:1 type Y waveguide, is merged at the single port of the first 2:1 Y waveguide, and then Coupled into the first photodetector;
  • the TM polarized light is divided by a 1:1 power beam splitter into two equal power beams of TM polarized light propagating in the horizontal and vertical directions respectively; the TM polarized light propagating in the horizontal direction is divided into the second 1:2 type Y waveguide Two beams of TM polarized light of equal power, one beam of TM polarized light is branched on the second 1:2 Y-waveguide, the second magneto-optical waveguide, and the second 2:1 Y-waveguide.
  • the TM polarized light that is branched down through the second 1:2 type Y waveguide, the second straight waveguide, and the second 2:1 type Y waveguide is merged at the single port of the second 2:1 type Y waveguide, and then coupled into the second Photodetector;
  • TM polarized light propagating in the vertical direction is divided into two beams of equal power TM polarized light by the third 1:2 type Y waveguide, and one of the TM polarized light passes through the third 1:2 type Y waveguide in turn
  • the branch, the third straight waveguide, and the third 2:1 type Y-waveguide are left branched with the other beam in turn through the third 1:2 type Y-waveguide, the third right branch, the third magneto-optical waveguide, and the third 2:1 type Y-waveguide.
  • the branched TM polarized light is converged at the single port of the third 2:1 type Y waveguide, and then coupled into the third photodetector.
  • the third output straight waveguide is a ridge waveguide, integrated on the surface of the lithium niobate single crystal film layer, the lithium niobate single crystal film layer is located on the surface of the silicon dioxide buffer layer, and the silicon dioxide buffer layer is located on the surface of the silicon substrate.
  • the silicon buffer layer is located between the lithium niobate single crystal thin film layer and the silicon substrate.
  • the first modulation electrode, the second modulation electrode, and the third modulation electrode are formed on the surface of the lithium niobate single crystal thin film layer.
  • the first magneto-optical waveguide, the second magneto-optical waveguide and the third magneto-optical waveguide respectively sense the magnetic field intensity in three different directions in the three-dimensional coordinate axis.
  • the first magneto-optical waveguide senses the magnetic field intensity in the X direction and the second The magneto-optical waveguide senses the magnetic field intensity in the Z direction, and the third magneto-optical waveguide senses the magnetic field intensity in the Y direction.
  • the light source adopts SLD light source or ASE light source, the optical paths of the three sensing axes adopt the symmetrical structure of Mach-Zehnder interferometer, and the two interference arms are of equal length.
  • the light source of the present invention adopts a broad-spectrum light source, the optical paths of the three sensing axes adopt the symmetrical structure of Mach-Zehnder interferometer, and the two interference arms are of equal length, and the phase difference between the two interference arms caused by the magnetic field is detected without being affected by the light source.
  • the influence of light intensity fluctuations can effectively avoid errors caused by parasitic effects in the optical system, and the optical noise is small.
  • the three-axis single-chip integration of the three-dimensional magnetic field sensor of the present invention has the advantages of high device integration, small size, simple manufacturing process, easy packaging, and suitable for mass production.
  • Figure 1 is a schematic diagram of the structure of the present invention
  • Figure 2 is a schematic cross-sectional view of a ridge waveguide
  • FIG. 3 is a schematic cross-sectional view of the first magneto-optical waveguide
  • Fig. 5 is a schematic cross-sectional view of a third magneto-optical waveguide.
  • the present invention includes a light source 1, an input straight waveguide 2, a polarization splitting waveguide 3, a 1:1 power splitter 4, three 1:2 Y waveguides, three 2:1 Y waveguides, Three output straight waveguides, three magneto-optical waveguides and three photodetectors; the input straight waveguide 2 is connected to the input port of the polarization beam splitting waveguide 3, and one output port of the polarization beam splitting waveguide 3 passes through the first 1:2 type in turn
  • the Y waveguide 5, the first 2:1 type Y waveguide 9, and the first output straight waveguide 10 are connected to the first photodetector 11.
  • the two output ports of the first 1:2 type Y waveguide 5 respectively pass through the first magneto-optical waveguide 6 and the first straight waveguide 7 are connected to the two input ports of the first 2:1 type Y waveguide 9; the other output port of the polarization beam splitting waveguide 3 is connected to the input port of the 1:1 power beam splitter 4, 1: 1
  • One output port of the power splitter 4 is connected to the second photodetector 18 through the second 1:2 Y-waveguide 12, the second 2:1 Y-waveguide 16, and the second output straight waveguide 17 in sequence, and the second 1 :
  • the two output ports of the 2 type Y waveguide 12 are respectively connected to the two input ports of the second 2:1 type Y waveguide 16 via the second magneto-optical waveguide 13 and the second straight waveguide 14; 1:1 power splitter 4
  • the other output port is connected to the third photodetector 25 through the third 1:2 type Y waveguide 19, the third 2:1 type Y waveguide 23, and the third output straight waveguide 24 in turn, and the third 1:2 type Y waveguide
  • the light source 1 outputs broad-spectrum depolarized light to the input straight waveguide 2, and is divided into TE polarized light and TM polarized light by the polarization splitting waveguide 3, and both TE polarized light and TM polarized light propagate in the horizontal direction; TE polarized light passes through the first 1 :
  • the 2 type Y waveguide 5 is divided into two TE polarized light beams of equal power, one of which is branched by the first 1:2 type Y waveguide 5, the first magneto-optical waveguide 6, and the first 2:1 type.
  • the single port of the type 1 Y waveguide 9 merges and then is coupled into the first photodetector 11; the TM polarized light is divided into two equal power beams by the 1:1 power beam splitter 4 and propagates in the positive Y direction and the negative Z direction respectively TM polarized light; the TM polarized light propagating in the positive Y direction is divided into two equal power beams of TM polarized light by the second 1:2 type Y waveguide 12, and one of the TM polarized light passes through the second 1:2 type Y in turn
  • the upper branch of the waveguide 12, the second magneto-optical waveguide 13, and the upper branch of the second 2:1 Y-waveguide 16 are followed by the second 1:2 type Y-waveguide 12, the second straight waveguide 14, the second The TM polarized light branched
  • One of the TM polarized lights passes through the left branch of the third 1:2 type Y waveguide 19, the third straight waveguide 21, and the third 2:1 type.
  • the TM polarized light that passes through the third 1:2 type Y waveguide 19 right branch, the third magneto-optical waveguide 20, and the third 2:1 type Y waveguide 23 right branch is in the third 2
  • the single port of the :1-type Y waveguide 23 is merged and then coupled into the third photodetector 25.
  • input straight waveguide 2 polarization splitting waveguide 3, 1:1 power splitter 4, first 1:2 type Y waveguide 5, first straight waveguide 7, first 2:1 type Y waveguide 9.
  • the third straight waveguide 21, the third 2:1 type Y waveguide 23, and the third output straight waveguide 24 are all ridge waveguides, integrated on the surface of the lithium niobate single crystal film layer 26, and the lithium niobate single crystal film layer 26 is located
  • the upper surface of the silicon dioxide buffer layer 27, the silicon dioxide buffer layer 27 is located on the upper surface of the silicon substrate 28, and the silicon substrate 28 is located at the bottom layer.
  • the thickness of the silicon substrate is 0.2 to 1 mm; the thickness of the silicon dioxide buffer layer is 1 to 10 microns, and the thickness of the lithium niobate single crystal film is 0.2 to 2 microns.
  • the first modulation electrode 8, the second modulation electrode 15, and the third modulation electrode 22 are formed on the upper surface of the lithium niobate single crystal thin film layer 26.
  • the first magneto-optical waveguide 6, the second magneto-optical waveguide 13, and the third magneto-optical waveguide 20 are respectively arranged along the coordinate directions of Figures 3, 4, and 5, and the first magnetic The optical waveguide 6, the second magneto-optical waveguide 13, and the third magneto-optical waveguide 20 are respectively sensitive to magnetic fields in the X, Z, and Y directions.
  • the first magneto-optical waveguide 6, the second magneto-optical waveguide 13 and the third magneto-optical waveguide 20 are all composed of an upper cladding layer, a lower cladding layer and a core layer located between the upper and lower cladding layers, and the positions of the upper and lower cladding layers and the core layer The relationship; the core layer and the upper and lower cladding layers are provided with a cladding layer of air 30; the core layer of the first magneto-optical waveguide 6 is mainly formed by bonding the magneto-optical material 29 and the lithium niobate 31 material, and the upper cladding layer of the first magneto-optical waveguide 6
  • the core layer of the second magneto-optical waveguide 13 and the third magneto-optical waveguide 20 are both made of lithium niobate 31 material, and the second magneto-optical waveguide 13 and the third magneto-optical waveguide
  • the upper cladding layer of the optical waveguide 20 is made of magneto-optical material 29,
  • the second magneto-optical waveguide 13 is along the Y direction
  • the third magneto-optical waveguide 20 is along the Z direction.
  • the first magneto-optical waveguide 6 senses the magnetic field intensity in the X direction
  • the second magneto-optical waveguide 13 senses the magnetic field intensity in the Z direction
  • the third magneto-optical waveguide 20 senses the magnetic field intensity in the Y direction.
  • the wide-spectrum depolarization light source input in this example uses an ASE light source with an output power of 5 mW, a center wavelength of 1550 nanometers, and a 3dB half-height spectrum width of 40 nanometers.
  • the thickness of the silicon substrate 28 is 0.5 mm
  • the thickness of the silicon dioxide buffer layer 27 is 2 ⁇ m
  • the thickness of the lithium niobate single crystal film 26 is 0.6 ⁇ m.
  • the output straight waveguides are all ridge waveguides with a waveguide width of 0.8 microns and a ridge height of 0.3 microns.
  • the electrode length of the first modulation electrode, the second modulation electrode, and the third modulation electrode is 10 mm, and the distance between the electrode and the ridge waveguide is 2 microns.
  • the lengths of the first magneto-optical waveguide, the second magneto-optical waveguide, and the third magneto-optical waveguide are all 10 mm.
  • the first magneto-optical waveguide senses the magnetic field intensity in the X direction
  • the second magneto-optical waveguide senses the magnetic field intensity in the Z direction
  • the third magneto-optical waveguide senses the magnetic field intensity in the Y direction.

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Abstract

一种芯片式三维磁场传感器，包括光源（1）、输入直波导（2）、偏振分束波导（3）、1:1功率分束器（4）、三个1:2型Y波导、三个2:1型Y波导、三个输出直波导、三个磁光波导和三个光电探测器；光源（1）输出宽谱消偏光到输入直波导（2），经偏振分束波导（3）分为TE偏振光和TM偏振光，TE偏振光经第一1:2型Y波导（5）分为两束TE偏振光；TM偏振光经1:1功率分束器（4）分成两束TM偏振光，沿正Y方向传播的TM偏振光经第二1:2型Y波导（12）分为两束TM偏振光；沿负Z方向传播的TM偏振光经第三1:2型Y波导（19）分为等功率的两束TM偏振光。三维磁场传感器的三轴为单片集成，器件集成度高，尺寸小，制作工艺简单，具有高的可靠性和环境适应性。

Description

一种芯片式三维磁场传感器 技术领域
本发明属于集成光学和磁场传感领域，尤其涉及一种芯片式三维磁场传感器。
背景技术
磁场传感器在日常交通、地球物理、军事国防以及生物医疗等众多领域都发挥着重要作用。例如，飞机采用磁场传感器实现高可靠的无接触信息交换，才得以保证飞行的高度安全；各种钢铁、稀有金属和有色金属等矿场资源都可以通过磁场传感器进行定位，从而大大降低探矿成本；通过检测领海的地磁场分布，对比原始地磁场数据可以推断出附近是否有核潜艇，以保障国家安全；高灵敏度磁场传感器甚至可以对人的心脑电波进行扫描并绘制心脑电磁图谱，以辅助医疗诊断等等。
经过人们的不断探索，大量不同种类的磁场传感器被研发出来并投入使用。纵观所有磁场传感器，霍尔器件和磁阻传感器的磁场灵敏度都比较低，线圈传感器、磁通门、质子磁力仪、光泵和超导量子干涉仪的磁场灵敏度都较高，在10-9T以上。在高灵敏度磁场传感器中，线圈传感器有一定的局限性，只能测量变化率较高的动态变化磁场，而不能测量直流磁场或者变化率低的磁场。磁通门和质子磁力仪的耗能十分严重，且其频率受自身原理的限制，不能适应高频率的发展趋势。光泵则尺寸更大，更昂贵，耗能更多(几瓦)，且维护不便。超导量子干涉仪的灵敏度最高为10-15T，但需要低温苛刻的环境，只能应用于实验室里。随着科技的不断发展，人们急切需要开发出更加优异的磁场传感器，比如灵敏度更高、频率更高、耗能更低，稳定性更高、体积更小等。
发明内容
为了解决背景技术中的问题，本发明提供一种三轴单片集成、集成度高、尺寸小、制备工艺简单、易于封装的芯片式三维磁场传感器。
本发明采用的技术方案如下：
本发明包括光源、输入直波导、偏振分束波导、1:1功率分束器、三个1:2型Y波导、三个2:1型Y波导、三个输出直波导、三个磁光波导和三个光电探测器；三个1:2型Y波导分别为第一2:1型Y波导、第二2:1型Y波导和第三2:1型Y波导，三个2:1型Y波导分别为第一2:1型Y波导、第二2:1型Y波导和第三2:1型Y波导，三个输出直波导分别为第一输出直波导、第二输出直波导和第三输出直波导，三个磁光波导分别为第一磁光波导、第二磁光波导和第 三磁光波导，三个光电探测器分别为第一光电探测器、第二光电探测器和第三光电探测器；
输入直波导与偏振分束波导的输入端口相连，偏振分束波导的一个输出端口依次经第一1:2型Y波导、第一2:1型Y波导、第一输出直波导连接至第一光电探测器作为一个传感轴，第一1:2型Y波导的两个输出端口分别经第一磁光波导和第一直波导连接至第一2:1型Y波导的两个输入端口；偏振分束波导的另一个输出端口与1:1功率分束器的输入端口相连，1:1功率分束器的一个输出端口依次经第二1:2型Y波导、第二2:1型Y波导、第二输出直波导连接至第二光电探测器作为一个传感轴，第二1:2型Y波导的两个输出端口分别经第二磁光波导和第二直波导连接至第二2:1型Y波导的两个输入端口；1:1功率分束器的另一个输出端口依次经第三1:2型Y波导、第三2:1型Y波导、第三输出直波导连接至第三光电探测器作为一个传感轴，第三1:2型Y波导的两个输出端口分别经第三磁光波导和第三调制电极连接至第三2:1型Y波导的两个输入端口；第一直波导的两侧设有第一调制电极，第二直波导的两侧设有第二调制电极，第三直波导的两侧设有第三调制电极。
光源输出宽谱消偏光至输入直波导，经偏振分束波导分为TE偏振光和TM偏振光，且TE偏振光和TM偏振光均沿水平方向传播；TE偏振光经第一1:2型Y波导分为等功率的两束TE偏振光，其中一束TE偏振光依次经第一1:2型Y波导上分支、第一磁光波导、第一2:1型Y波导上分支后与另一束依次经第一1:2型Y波导下分支、第一直波导、第一2:1型Y波导下分支的TE偏振光在第一2:1型Y波导的单端口汇合，之后耦合进第一光电探测器；
TM偏振光经1:1功率分束器分成等功率的两束分别沿水平方向和竖直方向传播的TM偏振光；沿水平方向传播的TM偏振光经第二1:2型Y波导分为等功率的两束TM偏振光，其中一束TM偏振光依次经第二1:2型Y波导上分支、第二磁光波导、第二2:1型Y波导上分支后与另一束依次经第二1:2型Y波导下分支、第二直波导、第二2:1型Y波导下分支的TM偏振光在第二2:1型Y波导的单端口汇合，之后耦合进第二光电探测器；沿竖直方向传播的TM偏振光经第三1:2型Y波导分为等功率的两束TM偏振光，其中一束TM偏振光依次经第三1:2型Y波导左分支、第三直波导、第三2:1型Y波导左分支后与另一束依次经第三1:2型Y波导右分支、第三磁光波导、第三2:1型Y波导右分支的TM偏振光在第三2:1型Y波导的单端口汇合，之后耦合进第三光电探测器。
所述的输入直波导、偏振分束波导、1:1功率分束器、第一1:2型Y波导、 第一直波导、第一2:1型Y波导、第一输出直波导、第二1:2型Y波导、第二直波导、第二2:1型Y波导、第二输出直波导、第三1:2型Y波导、第三直波导、第三2:1型Y波导、第三输出直波导均为脊波导，集成于铌酸锂单晶薄膜层表面，铌酸锂单晶薄膜层位于二氧化硅缓冲层表面，二氧化硅缓冲层位于硅衬底表面，二氧化硅缓冲层位于铌酸锂单晶薄膜层和硅衬底之间。
所述第一调制电极、第二调制电极、第三调制电极形成于铌酸锂单晶薄膜层表面。
所述的第一磁光波导、第二磁光波导和第三磁光波导均由上包层、下包层和位于上下包层之间的芯层组成；芯层和上下包层设置空气的包层；第一磁光波导的芯层主要由磁光材料与铌酸锂材料键合形成，第一磁光波导的上包层和下包层均由二氧化硅材料制成；第二磁光波导和第三磁光波导的芯层均由铌酸锂材料制成，第二磁光波导和第三磁光波导的上包层均由磁光材料制成、下包层均由二氧化硅材料制成。
所述的第一磁光波导、第二磁光波导和第三磁光波导分别传感三维坐标轴中三个不同方向的磁场强度，第一磁光波导传感X方向的磁场强度、第二磁光波导传感Z方向的磁场强度、第三磁光波导传感Y方向的磁场强度。
所述的光源采用SLD光源或ASE光源，三个传感轴的光路分别采用马赫曾德干涉仪的对称结构，两干涉臂等长。
本发明的有益效果：
1)本发明的光源采用宽谱光源，三个传感轴的光路分别采用马赫曾德干涉仪的对称结构，两干涉臂等长，检测由磁场引起的两干涉臂的相位差，不受光源光强波动的影响，有效避免光学系统中寄生效应引起的误差，光学噪声小。
2)本发明的三维磁场传感器三轴单片集成，器件集成度高、尺寸小、制作工艺简单、易于封装、适于批量生产。
附图说明
图1是本发明的结构示意图；
图2是脊波导的截面示意图；
图3是第一磁光波导的截面示意图；
图4是第二磁光波导的截面示意图；
图5是第三磁光波导的截面示意图。
图中：1、光源，2、输入直波导，3、偏振分束波导，4、1:1功率分束器，5、第一1:2型Y波导，6、第一磁光波导，7、第一直波导，8、第一调制电极，9、第一2:1型Y波导，10、第一输出直波导，11、第一光电探测器，12、第二 1:2型Y波导，13、第二磁光波导，14、第二直波导，15、第二调制电极，16、第二2:1型Y波导，17、第二输出直波导，18、第二光电探测器，19、第三1:2型Y波导，20、第三磁光波导，21、第三直波导，22、第三调制电极，23、第三2:1型Y波导，24、第三输出直波导，25、第三光电探测器，26、铌酸锂单晶薄膜层，27、二氧化硅缓冲层，28、硅衬底，29、磁光材料，30、空气、31、铌酸锂，32、二氧化硅。
具体实施方式
下面结合附图和实施例对本发明作进一步说明。
如图1所示，本发明包括光源1、输入直波导2、偏振分束波导3、1:1功率分束器4、三个1:2型Y波导、三个2:1型Y波导、三个输出直波导、三个磁光波导和三个光电探测器；输入直波导2与偏振分束波导3的输入端口相连，偏振分束波导3的一个输出端口依次经第一1:2型Y波导5、第一2:1型Y波导9、第一输出直波导10连接至第一光电探测器11，第一1:2型Y波导5的两个输出端口分别经第一磁光波导6和第一直波导7连接至第一2:1型Y波导9的两个输入端口；偏振分束波导3的另一个输出端口与1:1功率分束器4的输入端口相连，1:1功率分束器4的一个输出端口依次经第二1:2型Y波导12、第二2:1型Y波导16、第二输出直波导17连接至第二光电探测器18，第二1:2型Y波导12的两个输出端口分别经第二磁光波导13和第二直波导14连接至第二2:1型Y波导16的两个输入端口；1:1功率分束器4的另一个输出端口依次经第三1:2型Y波导19、第三2:1型Y波导23、第三输出直波导24连接至第三光电探测器25，第三1:2型Y波导19的两个输出端口分别经第三磁光波导20和第三调制电极22连接至第三2:1型Y波导23的两个输入端口；第一直波导7的两侧设有第一调制电极8，第二直波导14的两侧设有第二调制电极15，第三直波导21的两侧设有第三调制电极22。
光源1输出宽谱消偏光至输入直波导2，经偏振分束波导3分为TE偏振光和TM偏振光，且TE偏振光和TM偏振光均沿水平方向传播；TE偏振光经第一1:2型Y波导5分为等功率的两束TE偏振光，其中一束TE偏振光依次经第一1:2型Y波导5上分支、第一磁光波导6、第一2:1型Y波导9上分支后与另一束依次经第一1:2型Y波导5下分支、第一直波导7、第一2:1型Y波导9下分支的TE偏振光在第一2:1型Y波导9的单端口汇合，之后耦合进第一光电探测器11；TM偏振光经1:1功率分束器4分成等功率的两束分别沿正Y方向传播和沿负Z方向传播的TM偏振光；沿正Y方向传播的TM偏振光经第二1:2型Y波导12分为等功率的两束TM偏振光，其中一束TM偏振光依次经第二 1:2型Y波导12上分支、第二磁光波导13、第二2:1型Y波导16上分支后与另一束依次经第二1:2型Y波导12下分支、第二直波导14、第二2:1型Y波导16下分支的TM偏振光在第二2:1型Y波导16的单端口汇合，之后耦合进第二光电探测器18；沿负Z方向传播的TM偏振光经第三1:2型Y波导19分为等功率的两束TM偏振光，其中一束TM偏振光依次经第三1:2型Y波导19左分支、第三直波导21、第三2:1型Y波导23左分支后与另一束依次经第三1:2型Y波导19右分支、第三磁光波导20、第三2:1型Y波导23右分支的TM偏振光在第三2:1型Y波导23的单端口汇合，之后耦合进第三光电探测器25。
如图2所示，输入直波导2、偏振分束波导3、1:1功率分束器4、第一1:2型Y波导5、第一直波导7、第一2:1型Y波导9、第一输出直波导10、第二1:2型Y波导12、第二直波导14、第二2:1型Y波导16、第二输出直波导17、第三1:2型Y波导19、第三直波导21、第三2:1型Y波导23、第三输出直波导24均为脊波导，集成于铌酸锂单晶薄膜层26表面，铌酸锂单晶薄膜层26位于二氧化硅缓冲层27上表面，二氧化硅缓冲层27位于硅衬底28上表面，硅衬底28位于最底层。其中，硅衬底厚度为0.2～1毫米；二氧化硅缓冲层厚度为1～10微米，铌酸锂单晶薄膜厚度0.2～2微米。
第一调制电极8、第二调制电极15、第三调制电极22形成于铌酸锂单晶薄膜层26上表面。
如图3、图4、图5所示，第一磁光波导6、第二磁光波导13、第三磁光波导20分别沿图3、图4、图5坐标方向布置，且第一磁光波导6、第二磁光波导13、第三磁光波导20分别对X、Z、Y方向的磁场敏感。第一磁光波导6、第二磁光波导13和第三磁光波导20均由上包层、下包层和位于上下包层之间的芯层组成，且上下包层与芯层的位置关系；芯层和上下包层设置空气30的包层；第一磁光波导6的芯层主要由磁光材料29与铌酸锂31材料键合形成，第一磁光波导6的上包层和下包层均由二氧化硅32材料制成；第二磁光波导13和第三磁光波导20的芯层均由铌酸锂31材料制成，第二磁光波导13和第三磁光波导20的上包层均由磁光材料29制成、下包层均由二氧化硅27材料制成，其中第二磁光波导13沿Y方向，第三磁光波导20沿Z方向。由第一磁光波导6传感X方向的磁场强度、第二磁光波导13传感Z方向的磁场强度、第三磁光波导20传感Y方向的磁场强度。
实施例：
本实例输入的宽谱消偏光光源采用ASE光源，输出功率为5毫瓦，中心波长为1550纳米，3dB半高谱宽40纳米。硅衬底28厚度为0.5毫米、二氧化硅 缓冲层27厚度为2微米、铌酸锂单晶薄膜26厚度为0.6微米。磁光材料29选用掺铈钇铁石榴石(Ce:YIG)，Ce:YIG的法拉第旋转角取θ F＝7.0×10 -3μm，磁光系数f 1＝-8.63×10 -8(A/m)，饱和磁化强度M s达到95.5kA/m，有效折射率n Ce:YIG＝2.22。
输入直波导、偏振分束波导、1:1功率分束器、第一1:2型Y波导、第一直波导、第一2:1型Y波导、第一输出直波导、第二1:2型Y波导、第二直波导、第二2:1型Y波导、第二输出直波导、第三1:2型Y波导、第三直波导、第三2:1型Y波导、第三输出直波导均为脊波导，波导宽度为0.8微米，脊高0.3微米。第一调制电极、第二调制电极、第三调制电极的电极长度为10毫米，电极与脊波导的间距为2微米。第一磁光波导、第二磁光波导、第三磁光波导的长度均为10mm。由第一磁光波导传感X方向的磁场强度、第二磁光波导传感Z方向的磁场强度、第三磁光波导传感Y方向的磁场强度。

Claims (7)

  1. 一种芯片式三维磁场传感器，其特征在于：包括光源(1)、输入直波导(2)、偏振分束波导(3)、1:1功率分束器(4)、三个1:2型Y波导、三个2:1型Y波导、三个输出直波导、三个磁光波导和三个光电探测器；
    输入直波导(2)与偏振分束波导(3)的输入端口相连，偏振分束波导(3)的一个输出端口依次经第一1:2型Y波导(5)、第一2:1型Y波导(9)、第一输出直波导(10)连接至第一光电探测器(11)作为一个传感轴，第一1:2型Y波导(5)的两个输出端口分别经第一磁光波导(6)和第一直波导(7)连接至第一2:1型Y波导(9)的两个输入端口；偏振分束波导(3)的另一个输出端口与1:1功率分束器(4)的输入端口相连，1:1功率分束器(4)的一个输出端口依次经第二1:2型Y波导(12)、第二2:1型Y波导(16)、第二输出直波导(17)连接至第二光电探测器(18)作为一个传感轴，第二1:2型Y波导(12)的两个输出端口分别经第二磁光波导(13)和第二直波导(14)连接至第二2:1型Y波导(16)的两个输入端口；1:1功率分束器(4)的另一个输出端口依次经第三1:2型Y波导(19)、第三2:1型Y波导(23)、第三输出直波导(24)连接至第三光电探测器(25)作为一个传感轴，第三1:2型Y波导(19)的两个输出端口分别经第三磁光波导(20)和第三调制电极(22)连接至第三2:1型Y波导(23)的两个输入端口；第一直波导(7)的两侧设有第一调制电极(8)，第二直波导(14)的两侧设有第二调制电极(15)，第三直波导(21)的两侧设有第三调制电极(22)。
  2. 根据权利要求1所述的一种芯片式三维磁场传感器，其特征在于：光源(1)输出宽谱消偏光至输入直波导(2)，经偏振分束波导(3)分为TE偏振光和TM偏振光，且TE偏振光和TM偏振光均沿水平方向传播；TE偏振光经第一1:2型Y波导(5)分为等功率的两束TE偏振光，其中一束TE偏振光依次经第一1:2型Y波导(5)上分支、第一磁光波导(6)、第一2:1型Y波导(9)上分支后与另一束依次经第一1:2型Y波导(5)下分支、第一直波导(7)、第一2:1型Y波导(9)下分支的TE偏振光在第一2:1型Y波导(9)的单端口汇合，之后耦合进第一光电探测器(11)；
    TM偏振光经1:1功率分束器(4)分成等功率的两束分别沿水平方向和竖直方向传播的TM偏振光；沿水平方向传播的TM偏振光经第二1:2型Y波导(12)分为等功率的两束TM偏振光，其中一束TM偏振光依次经第二1:2型Y波导(12)上分支、第二磁光波导(13)、第二2:1型Y波导(16)上分支后 与另一束依次经第二1:2型Y波导(12)下分支、第二直波导(14)、第二2:1型Y波导(16)下分支的TM偏振光在第二2:1型Y波导(16)的单端口汇合，之后耦合进第二光电探测器(18)；沿竖直方向传播的TM偏振光经第三1:2型Y波导(19)分为等功率的两束TM偏振光，其中一束TM偏振光依次经第三1:2型Y波导(19)左分支、第三直波导(21)、第三2:1型Y波导(23)左分支后与另一束依次经第三1:2型Y波导(19)右分支、第三磁光波导(20)、第三2:1型Y波导(23)右分支的TM偏振光在第三2:1型Y波导(23)的单端口汇合，之后耦合进第三光电探测器(25)。
  3. 根据权利要求1所述的一种芯片式三维磁场传感器，其特征在于：所述的输入直波导(2)、偏振分束波导(3)、1:1功率分束器(4)、第一1:2型Y波导(5)、第一直波导(7)、第一2:1型Y波导(9)、第一输出直波导(10)、第二1:2型Y波导(12)、第二直波导(14)、第二2:1型Y波导(16)、第二输出直波导(17)、第三1:2型Y波导(19)、第三直波导(21)、第三2:1型Y波导(23)、第三输出直波导(24)均为脊波导，集成于铌酸锂单晶薄膜层(26)表面，铌酸锂单晶薄膜层(26)位于二氧化硅缓冲层(27)表面，二氧化硅缓冲层(27)位于硅衬底(28)表面，二氧化硅缓冲层(27)位于铌酸锂单晶薄膜层(26)和硅衬底(28)之间。
  4. 根据权利要求3所述的一种芯片式三维磁场传感器，其特征在于：所述第一调制电极(8)、第二调制电极(15)、第三调制电极(22)形成于铌酸锂单晶薄膜层(26)表面。
  5. 根据权利要求1所述的一种芯片式三维磁场传感器，其特征在于：所述的第一磁光波导(6)、第二磁光波导(13)和第三磁光波导(20)均由上包层、下包层和位于上下包层之间的芯层组成；第一磁光波导(6)的芯层主要由磁光材料(29)与铌酸锂(31)材料键合形成，第一磁光波导(6)的上包层和下包层均由二氧化硅(32)材料制成；第二磁光波导(13)和第三磁光波导(20)的芯层均由铌酸锂(31)材料制成，第二磁光波导(13)和第三磁光波导(20)的上包层均由磁光材料(29)制成、下包层均由二氧化硅(27)材料制成。
  6. 根据权利要求5所述的一种芯片式三维磁场传感器，其特征在于：所述的第一磁光波导(6)、第二磁光波导(13)和第三磁光波导(20)分别传感三维坐标轴中三个不同方向的磁场强度。
  7. 根据权利要求1所述的一种芯片式三维磁场传感器，其特征在于：所述的光源(1)采用SLD光源或ASE光源，三个传感轴的光路分别采用马赫曾德干涉仪的对称结构，两干涉臂等长。
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