WO2020223061A1 - GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE - Google Patents

GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE Download PDF

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Publication number
WO2020223061A1
WO2020223061A1 PCT/US2020/029119 US2020029119W WO2020223061A1 WO 2020223061 A1 WO2020223061 A1 WO 2020223061A1 US 2020029119 W US2020029119 W US 2020029119W WO 2020223061 A1 WO2020223061 A1 WO 2020223061A1
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Prior art keywords
fet
gan fet
gan
source
driver
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PCT/US2020/029119
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French (fr)
Inventor
Michael Chapman
Ravi ANANTH
Edward Lee
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Efficient Power Conversion Corporation
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Publication date
Application filed by Efficient Power Conversion Corporation filed Critical Efficient Power Conversion Corporation
Priority to CN202080032163.1A priority Critical patent/CN113785492B/en
Priority to EP20798216.6A priority patent/EP3963720B1/en
Priority to JP2021564334A priority patent/JP7486522B2/en
Priority to KR1020217038946A priority patent/KR20220012860A/en
Publication of WO2020223061A1 publication Critical patent/WO2020223061A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/395—Linear regulators
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30—Driver circuits
    • H05B45/395—Linear regulators
    • H05B45/397—Current mirror circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption

Definitions

  • the present invention relates generally to an output stage including a pre-driver for driving a gallium nitride (GaN) field effect transistor (FET) and, more particularly, to an output stage for use as a laser diode driver for Lidar applications.
  • GaN gallium nitride
  • FET field effect transistor
  • a typical output stage for driving a laser diode is implemented using a common- source drive FET with the drain of the drive FET connected to the cathode of the laser diode and the source of the drive FET connected to ground.
  • the gate of the drive FET is driven by a pre-driver with enough impulse current capability to overcome the large capacitance of the gate and turn on the drive FET.
  • the pre-driver powered by a first supply voltage, receives a control signal to turn on the drive FET and generates a gate current from the first supply voltage for driving the gate terminal of the drive FET.
  • the drive FET turns on, and a drive current through the drive GaN FET is drawn from a second supply voltage that is greater than the first supply voltage.
  • FIG. 1 illustrates a schematic of a conventional output stage including a pre-driver and a GaN power FET for driving a laser diode.
  • the circuit 100 includes a pre-driver 120, a GaN FET 130, and a laser diode 140.
  • Diode 140 is the load in this example, but other implementations may include other loads.
  • Pre-driver 120 receives a control signal CTL 1 10 that indicates GaN FET 130 is to be turned on and generates a gate current IGMI from the supply voltage VDD.
  • Pre-driver 120 applies IGMI to the gate terminal of the GaN FET 130, which turns on and draws the drive current IDRIVE through diode 140 from the supply voltage VH that is higher voltage than VDD.
  • the gate current IGMI drawn from VDD decreases the efficiency of circuit 100 and results in a large return current IRTN.
  • Parasitic impedance on the electrical connections between the pre-driver 120 and the ground node 105 and between the drive FET 130 and the ground node 105 in combination with IRTN can cause voltage drops, ground bounce, and ringing on ground node 105.
  • Ground bounce occurs in response to the ground traces exhibiting ripples in voltage from high current pulses such as IRTN. If the ground bounce becomes large enough, it may cause error voltages in pre-driver 120, such that pre-driver 120 does not generate the proper gate current IGMI in response to CTL 1 10 indicating that drive FET 130 is to be turned on.
  • the present invention addresses the disadvantages of increased power consumption, ground bounce, and ringing on ground nodes as discussed above by providing a driver circuit that comprises a first GaN FET in a common-source configuration and a second GaN FET in a source-follower configuration.
  • the present invention comprises a driver circuit for a load (such as a laser diode) comprising a first GaN FET connected in a common-source configuration with its drain connected to the load to be driven (from a first power supply voltage) and its source connected to ground.
  • the driver circuit also includes a second, substantially smaller GaN FET connected in a source-follower configuration with its drain connected to the load and its source connected to the gate terminal of the first GaN FET.
  • a pre-driver powered by a second supply voltage, drives the second GaN FET in accordance with a control signal, such that the gate drive current for the first GaN FET is provided by the first supply voltage and flows through the load and through the second GaN FET, thereby improving overall circuit efficiency.
  • FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode.
  • FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present invention.
  • FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention.
  • FIGS. 2A and 2B illustrate schematics of the driver circuit with gate current reuse according to an embodiment of the present invention.
  • the circuits 200A and 200B each include a pre-driver circuit 220, a drive FET transistor 230 in a common-source configuration, a laser diode 240, a source-follower FET transistor 250, and a load 260A/260B.
  • Laser diode 240 is the load driven by drive transistor 230 in this example, but other implementations may include other loads.
  • FET transistors 230 and 250 are preferably enhancement mode GaN FETs as shown, and may be integrated into a single semiconductor chip.
  • Drive GaN FET 230 is substantially larger than GaN FET 250, i.e. , the gate width of GaN FET 250 is much smaller than the gate width of drive GaN FET 230, such that the gate capacitance of GaN FET 250 is much smaller than the gate capacitance of GaN FET 230.
  • Pre-driver circuit 220 receives a control signal CTL 210 that indicates drive GaN FET 230 is to be turned on, and is connected to a supply voltage VDD and ground node 205.
  • the output of pre-driver circuit 220 is connected to the gate terminal of GaN FET 250, which is configured as a source-follower.
  • the gate terminal of GaN FET 250 is driven by a gate current IGM2 generated by pre-driver circuit 220.
  • the drain terminal of GaN FET 250 is connected to the cathode of laser diode 240 and the drain terminal of drive FET 230, and the source terminal of GaN FET 250 is connected to the load 260A/260B and the gate terminal of drive GaN FET 230.
  • the load may be implemented with a resistor 260A as shown in FIG. 2A, or a synchronous pulldown switch 260B as shown in FIG. 2B.
  • the anode of laser diode 240 is connected to a second supply voltage VH that is greater than the supply voltage VDD.
  • the drain terminal of drive GaN FET 230 is connected to the cathode of diode 240 and the drain terminal of GaN FET 250, and the source terminal of drive FET 230 is connected to ground node 205.
  • the gate terminal of drive FET 230 is driven by gate current IGMI , which is the drain-to-source current through GaN FET 250.
  • pre-driver circuit 220 In response to CTL 210 indicating drive FET 230 is to be turned on, pre-driver circuit 220 generates the drive current IGM2 from the supply voltage VDD and applies it to the gate terminal of GaN FET 250. Because the gate capacitance of GaN FET 250 is much smaller than the gate capacitance of drive FET 230, the drive current IGM2 is much smaller than the drive current IGMI , which reduces the current consumption of pre-driver 220 and the current draw through VDD and increases the system efficiency. GaN FET 250 turns on and draws a current IDRIVE through diode 240 from the higher supply voltage VH. The drain- to-source current through GaN FET 250 is the gate current IGMI applied to the gate terminal of drive GaN FET 230.
  • the gate current IGMI is drawn from the higher supply voltage VH, which is better able to supply the large current impulse needed to turn on the drive GaN FET 230 than the lower supply voltage VDD.
  • the gate current IGMI is drawn through laser diode 240, contributing to the diode drive current IDRIVE and the optical output power.
  • Drive GaN FET 230 turns on and draws a drain-to-source current IDRAIN, which greatly increases the drive current IDRIVE through diode 240.
  • the gate current IGM2 is less than the gate current IGMI applied to the gate terminal of drive GaN FET 130 shown in FIG.
  • the load 260 further reduces ringing, ground bounce, and voltage drops on ground node 205 from the return current IRTN.
  • FIG. 3 illustrates a schematic of a driver circuit with gate current reuse according to a second embodiment of the present invention.
  • Circuit 300 is similar to the circuit 200 shown in FIG. 2, but includes a third enhancement mode GaN FET configured as a diode in place of load 260A or 260B, with GaN FET 360 and drive GaN FET 330 arranged as a current mirror 370.
  • GaN FETs 330, 350, and 360 may be integrated onto a single semiconductor chip.
  • the current ratio of current mirror 370 may be represented as:
  • IDRAIN_33O represents the drain-to-source current through drive FET 330
  • IDRAIN_36O represents the drain-to-source current through GaN FET 360
  • W330 represents the gate width of drive FET 330
  • W360 represents the gate width of GaN FET 360.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Semiconductor Lasers (AREA)
  • Electronic Switches (AREA)

Abstract

A laser-diode driver for Lidar applications with an output stage comprised of two enhancement mode GaN FETs. The output stage includes a driver GaN FET in a traditional common-source configuration, with the drain connected to the cathode of a laser diode and the source connected to ground. The gate of the driver GaN FET is driven by the source of the second, substantially smaller GaN FET in a source-follower configuration, rather than being driven directly by a pre-driver. The source-follower GaN FET has its drain connected to the drain of the common-source driver GaN FET, similar to a Darlington connection used in bipolar devices. The input drive signal from the pre-driver is applied at the gate of the source-follower GaN FET. The current required to turn on the driver GaN FET is thereby drawn from a main power supply through the laser diode, rather than from the power supply for the pre-driver, improving overall current efficiency.

Description

GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE
BACKGROUND
1. Field of the Invention
[0001] The present invention relates generally to an output stage including a pre-driver for driving a gallium nitride (GaN) field effect transistor (FET) and, more particularly, to an output stage for use as a laser diode driver for Lidar applications.
2. Description of the Related Art
[0002] A typical output stage for driving a laser diode is implemented using a common- source drive FET with the drain of the drive FET connected to the cathode of the laser diode and the source of the drive FET connected to ground. The gate of the drive FET is driven by a pre-driver with enough impulse current capability to overcome the large capacitance of the gate and turn on the drive FET. The pre-driver, powered by a first supply voltage, receives a control signal to turn on the drive FET and generates a gate current from the first supply voltage for driving the gate terminal of the drive FET. The drive FET turns on, and a drive current through the drive GaN FET is drawn from a second supply voltage that is greater than the first supply voltage.
[0003] FIG. 1 illustrates a schematic of a conventional output stage including a pre-driver and a GaN power FET for driving a laser diode. The circuit 100 includes a pre-driver 120, a GaN FET 130, and a laser diode 140. Diode 140 is the load in this example, but other implementations may include other loads. Pre-driver 120 receives a control signal CTL 1 10 that indicates GaN FET 130 is to be turned on and generates a gate current IGMI from the supply voltage VDD. Pre-driver 120 applies IGMI to the gate terminal of the GaN FET 130, which turns on and draws the drive current IDRIVE through diode 140 from the supply voltage VH that is higher voltage than VDD.
[0004] The gate current IGMI drawn from VDD decreases the efficiency of circuit 100 and results in a large return current IRTN. Parasitic impedance on the electrical connections between the pre-driver 120 and the ground node 105 and between the drive FET 130 and the ground node 105 in combination with IRTN can cause voltage drops, ground bounce, and ringing on ground node 105. Ground bounce occurs in response to the ground traces exhibiting ripples in voltage from high current pulses such as IRTN. If the ground bounce becomes large enough, it may cause error voltages in pre-driver 120, such that pre-driver 120 does not generate the proper gate current IGMI in response to CTL 1 10 indicating that drive FET 130 is to be turned on.
SUMMARY OF THE INVENTION
[0005] The present invention addresses the disadvantages of increased power consumption, ground bounce, and ringing on ground nodes as discussed above by providing a driver circuit that comprises a first GaN FET in a common-source configuration and a second GaN FET in a source-follower configuration.
[0006] More specifically, the present invention, as described herein, comprises a driver circuit for a load (such as a laser diode) comprising a first GaN FET connected in a common-source configuration with its drain connected to the load to be driven (from a first power supply voltage) and its source connected to ground. The driver circuit also includes a second, substantially smaller GaN FET connected in a source-follower configuration with its drain connected to the load and its source connected to the gate terminal of the first GaN FET. A pre-driver, powered by a second supply voltage, drives the second GaN FET in accordance with a control signal, such that the gate drive current for the first GaN FET is provided by the first supply voltage and flows through the load and through the second GaN FET, thereby improving overall circuit efficiency.
[0007] The above and other preferred features described herein, including various novel details of implementation and combination of elements, will now be more particularly described with reference to the accompanying drawings and pointed out in the claims. It should be understood that the particular methods and apparatuses are shown by way of illustration only and not as limitations of the claims. As will be understood by those skilled in the art, the principles and features of the teachings herein may be employed in various and numerous embodiments without departing from the scope of the claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The features, objects, and advantages of the present disclosure will become more apparent from the detailed description set forth below when taken in conjunction with the drawings in which like reference characters identify correspondingly throughout and wherein:
[0009] FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode.
[0010] FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present invention.
[0011] FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0012] In the following detailed description, reference is made to certain embodiments. These embodiments are described with sufficient detail to enable those skilled in the art to practice them. It is to be understood that other embodiments may be employed and that various structural, logical, and electrical changes may be made. The combinations of features disclosed in the following detailed description may not be necessary to practice the teachings in the broadest sense, and are instead taught merely to describe particularly representative examples of the present teachings.
[0013] FIGS. 2A and 2B illustrate schematics of the driver circuit with gate current reuse according to an embodiment of the present invention. The circuits 200A and 200B each include a pre-driver circuit 220, a drive FET transistor 230 in a common-source configuration, a laser diode 240, a source-follower FET transistor 250, and a load 260A/260B. Laser diode 240 is the load driven by drive transistor 230 in this example, but other implementations may include other loads. FET transistors 230 and 250 are preferably enhancement mode GaN FETs as shown, and may be integrated into a single semiconductor chip. Drive GaN FET 230 is substantially larger than GaN FET 250, i.e. , the gate width of GaN FET 250 is much smaller than the gate width of drive GaN FET 230, such that the gate capacitance of GaN FET 250 is much smaller than the gate capacitance of GaN FET 230.
[0014] Pre-driver circuit 220 receives a control signal CTL 210 that indicates drive GaN FET 230 is to be turned on, and is connected to a supply voltage VDD and ground node 205. The output of pre-driver circuit 220 is connected to the gate terminal of GaN FET 250, which is configured as a source-follower. The gate terminal of GaN FET 250 is driven by a gate current IGM2 generated by pre-driver circuit 220. The drain terminal of GaN FET 250 is connected to the cathode of laser diode 240 and the drain terminal of drive FET 230, and the source terminal of GaN FET 250 is connected to the load 260A/260B and the gate terminal of drive GaN FET 230. The load may be implemented with a resistor 260A as shown in FIG. 2A, or a synchronous pulldown switch 260B as shown in FIG. 2B.
[0015] The anode of laser diode 240 is connected to a second supply voltage VH that is greater than the supply voltage VDD. The drain terminal of drive GaN FET 230 is connected to the cathode of diode 240 and the drain terminal of GaN FET 250, and the source terminal of drive FET 230 is connected to ground node 205. The gate terminal of drive FET 230 is driven by gate current IGMI , which is the drain-to-source current through GaN FET 250.
[0016] In response to CTL 210 indicating drive FET 230 is to be turned on, pre-driver circuit 220 generates the drive current IGM2 from the supply voltage VDD and applies it to the gate terminal of GaN FET 250. Because the gate capacitance of GaN FET 250 is much smaller than the gate capacitance of drive FET 230, the drive current IGM2 is much smaller than the drive current IGMI , which reduces the current consumption of pre-driver 220 and the current draw through VDD and increases the system efficiency. GaN FET 250 turns on and draws a current IDRIVE through diode 240 from the higher supply voltage VH. The drain- to-source current through GaN FET 250 is the gate current IGMI applied to the gate terminal of drive GaN FET 230.
[0017] The gate current IGMI is drawn from the higher supply voltage VH, which is better able to supply the large current impulse needed to turn on the drive GaN FET 230 than the lower supply voltage VDD. In addition, the gate current IGMI is drawn through laser diode 240, contributing to the diode drive current IDRIVE and the optical output power. Drive GaN FET 230 turns on and draws a drain-to-source current IDRAIN, which greatly increases the drive current IDRIVE through diode 240. The gate current IGM2 is less than the gate current IGMI applied to the gate terminal of drive GaN FET 130 shown in FIG. 1 , which reduces the return current IRTN and the associated detrimental effects such as ringing, ground bounce, and voltage drops on ground node 205. The load 260 further reduces ringing, ground bounce, and voltage drops on ground node 205 from the return current IRTN.
[0018] FIG. 3 illustrates a schematic of a driver circuit with gate current reuse according to a second embodiment of the present invention. Circuit 300 is similar to the circuit 200 shown in FIG. 2, but includes a third enhancement mode GaN FET configured as a diode in place of load 260A or 260B, with GaN FET 360 and drive GaN FET 330 arranged as a current mirror 370. GaN FETs 330, 350, and 360 may be integrated onto a single semiconductor chip. The current ratio of current mirror 370 may be represented as:
1 DRAIN _ 330
1DRAIN_ 360
Figure imgf000008_0001
where IDRAIN_33O represents the drain-to-source current through drive FET 330, IDRAIN_36O represents the drain-to-source current through GaN FET 360, W330 represents the gate width of drive FET 330, and W360 represents the gate width of GaN FET 360.
[0019] With a sufficiently large ratio, only a fraction of the drive current IDRIVE through laser diode 340 is diverted to the gate drive path through the smaller GaN FETs 350 and 360. Use of a third GaN FET 360 to implement a current mirror 370 allows a well-defined current ratio and precise control over current through the gate drive path and through the drive GaN FET 330. Because drive GaN FET 330 is much larger than the smaller GaN FETs 350 and 360 in the gate drive path, drive GaN FET 330 is better able to withstand large currents. Thus, it is preferable to divert a larger portion of the drive current IDRIVE through drive GaN FET 330 and a smaller portion through GaN FETs 350 and 360.
[0020] The above description and drawings are only to be considered illustrative of specific embodiments, which achieve the features and advantages described herein. Modifications and substitutions to specific process conditions can be made. Accordingly, the embodiments of the invention are not considered as being limited by the foregoing description and drawings.

Claims

1. A driver circuit for a load having a first terminal connected to a first supply voltage and a second terminal, comprising:
a first FET connected in a common-source configuration having a drain connected to the second terminal of the load, a source connected to ground, and a gate for receiving a gate drive current;
a second FET connected in a source-follower configuration having a drain connected to the second terminal of the load, a source connected to the gate of the first FET, and a gate; and
a pre-driver powered by a second supply voltage and having an input for receiving a control signal and an output connected to the gate of the second FET, such that the pre driver drives the second FET in accordance with the control signal, and the gate drive current for the first FET is provided by the first supply voltage and flows through the load and through the second FET.
2. The driver circuit of claim 1 , wherein the load comprises a laser diode.
3. The driver circuit of claim 1 , wherein the first FET is an enhancement mode GaN FET and the second FET is an enhancement mode GaN FET.
4. The driver circuit of claim 3, wherein the pre-driver, the first GaN FET, and the second GaN FET are integrated onto a single semiconductor chip.
5. The driver circuit of claim 3, wherein the first GaN FET is substantially larger than the second GaN FET.
6. The driver circuit of claim 3, further comprising a second load connected between the source terminal of the second GaN FET and ground.
7. The driver circuit of claim 6, wherein the second load comprises a resistor.
8. The driver circuit of claim 6, wherein the second load comprises a synchronous pulldown switch.
9. The driver circuit of claim 6, wherein the second load comprises a third GaN FET configured as a diode and has a gate connected to the gate of the first GaN FET, forming a current mirror between the third GaN FET and the first GaN FET.
10. The driver circuit of claim 9, wherein the current mirror has a current mirror ratio that causes a drain-to-source current through the third GaN FET to be substantially smaller than the drain-to-source current through the first GaN FET.
1 1 . The driver circuit of claim 9, wherein the pre-driver circuit, the first GaN FET, the second GaN FET, and the third GaN FET are integrated onto a single semiconductor chip.
PCT/US2020/029119 2019-04-29 2020-04-21 GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE WO2020223061A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202080032163.1A CN113785492B (en) 2019-04-29 2020-04-21 Gallium nitride laser diode driving field effect transistor with gate current reuse
EP20798216.6A EP3963720B1 (en) 2019-04-29 2020-04-21 Gan laser diode drive fet with gate current reuse
JP2021564334A JP7486522B2 (en) 2019-04-29 2020-04-21 GaN laser diode drive FET with gate current reuse - Patents.com
KR1020217038946A KR20220012860A (en) 2019-04-29 2020-04-21 GaN Laser Diode Driven FETs Using Gate Current Reuse

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US201962839982P 2019-04-29 2019-04-29
US62/839,982 2019-04-29

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220221557A1 (en) * 2021-01-11 2022-07-14 Beijing Voyager Technology Co., Ltd. Systems and methods for controlling laser power in light detection and ranging (lidar) systems

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096443A (en) * 1977-02-16 1978-06-20 Gilson Warren E Balanced source follower amplifier
US6720805B1 (en) * 2003-04-28 2004-04-13 National Semiconductor Corporation Output load resistor biased LVDS output driver
US7256615B2 (en) * 2005-01-31 2007-08-14 Delphi Technologies, Inc. Configurable high/low side driver using a low-side FET pre-driver
US7567097B2 (en) * 2007-09-29 2009-07-28 Hewlett-Packard Development Company, L.P. Pre-driver circuit and appparatus using same
US20150097620A1 (en) * 2013-10-08 2015-04-09 Peregrine Semiconductor Corporation Resonant Pre-Driver for Switching Amplifier

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4202251C2 (en) * 1992-01-16 2000-01-05 Rainer Schroecker Circuit arrangement for controlling field-controlled circuit breakers
EP0555648A3 (en) 1992-01-16 1994-09-28 Kopp Heinrich Ag Circuit for controlling field-controlled power switches
JP2001326417A (en) 2000-05-18 2001-11-22 Nec Corp Driver circuit for laser diode
JP4763900B2 (en) * 2001-02-16 2011-08-31 キヤノン株式会社 Light emitting element drive circuit
JP4932415B2 (en) * 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 Semiconductor device
US8593211B2 (en) * 2012-03-16 2013-11-26 Texas Instruments Incorporated System and apparatus for driver circuit for protection of gates of GaN FETs
JP5959901B2 (en) 2012-04-05 2016-08-02 株式会社日立製作所 Semiconductor drive circuit and power conversion device
JP5915428B2 (en) * 2012-07-12 2016-05-11 ソニー株式会社 Driving circuit and driving method
TWI682515B (en) * 2014-08-20 2020-01-11 美商納維達斯半導體公司 Power transistor with distributed gate
US9887537B2 (en) 2015-06-30 2018-02-06 Microsoft Technology Licensing, Llc Analog limit on digitally set pulse widths
US10892591B2 (en) 2018-04-03 2021-01-12 Fermi Research Alliance, Llc High speed driver for particle beam deflector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096443A (en) * 1977-02-16 1978-06-20 Gilson Warren E Balanced source follower amplifier
US6720805B1 (en) * 2003-04-28 2004-04-13 National Semiconductor Corporation Output load resistor biased LVDS output driver
US7256615B2 (en) * 2005-01-31 2007-08-14 Delphi Technologies, Inc. Configurable high/low side driver using a low-side FET pre-driver
US7567097B2 (en) * 2007-09-29 2009-07-28 Hewlett-Packard Development Company, L.P. Pre-driver circuit and appparatus using same
US20150097620A1 (en) * 2013-10-08 2015-04-09 Peregrine Semiconductor Corporation Resonant Pre-Driver for Switching Amplifier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3963720A4 *

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KR20220012860A (en) 2022-02-04
EP3963720A1 (en) 2022-03-09
EP3963720A4 (en) 2022-12-28
CN113785492A (en) 2021-12-10
US20200343688A1 (en) 2020-10-29
US10847947B2 (en) 2020-11-24
CN113785492B (en) 2024-05-03
JP2022531197A (en) 2022-07-06
TW202112020A (en) 2021-03-16
JP7486522B2 (en) 2024-05-17
EP3963720B1 (en) 2024-02-07
TWI743752B (en) 2021-10-21

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