WO2020216265A1 - 一种ii-iii-v-vi族量子点、其制备方法及量子点光电器件 - Google Patents

一种ii-iii-v-vi族量子点、其制备方法及量子点光电器件 Download PDF

Info

Publication number
WO2020216265A1
WO2020216265A1 PCT/CN2020/086244 CN2020086244W WO2020216265A1 WO 2020216265 A1 WO2020216265 A1 WO 2020216265A1 CN 2020086244 W CN2020086244 W CN 2020086244W WO 2020216265 A1 WO2020216265 A1 WO 2020216265A1
Authority
WO
WIPO (PCT)
Prior art keywords
group
iii
quantum dot
precursor
quantum dots
Prior art date
Application number
PCT/CN2020/086244
Other languages
English (en)
French (fr)
Inventor
乔培胜
汪均
余文华
Original Assignee
纳晶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 纳晶科技股份有限公司 filed Critical 纳晶科技股份有限公司
Priority to US17/606,061 priority Critical patent/US20220220376A1/en
Publication of WO2020216265A1 publication Critical patent/WO2020216265A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C09K11/701—Chalcogenides
    • C09K11/703—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C09K11/621—Chalcogenides
    • C09K11/623—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

Definitions

  • the invention relates to the technical field of quantum dot materials, in particular to a II-III-V-VI group quantum dot, a preparation method thereof and a quantum dot optoelectronic device.
  • Quantum dot materials are inorganic materials with a nanometer size, with excellent luminescence properties, and have broad application prospects in the fields of display, lighting and biology. Compared with luminescent materials such as phosphors, quantum dots have the advantages of adjustable luminescence range, narrow fluorescence half-peak width, high quantum efficiency, and strong stability. Considering environmental protection factors, the application of existing cadmium-containing quantum dot materials is greatly restricted, and cadmium-free quantum dots represented by indium phosphide are the focus of research and development in recent years.
  • indium phosphide In the nucleation of indium phosphide, it has the characteristics of covalent bonding, fast nucleation speed, and many lattice defects, which leads to a wider half-width of the fluorescence emission and lower quantum efficiency. In particular, red light quantum dots require a large nucleation size, which further increases the difficulty of their preparation. In addition, intrinsic indium phosphide has many lattice defects and low quantum efficiency. It is necessary to coat the quantum dot core with a shell layer to improve the luminescence performance. However, the lattice mismatch between the III-V group InP quantum dots and the commonly used II-VI group ZnSe or ZnS shell layer is relatively high, resulting in poor coating effect.
  • the prior art preparation of InP mainly involves adding In, P source precursors or small InP particles to the initial core of InP to form large particles of InP.
  • the replenishing solution is easy to self-nucleate, forming small particles of InP, which affects the growth rate and uniformity of InP;
  • Due to the structure of InP the initial nucleus of InP in the replenishing solution is not uniform. There are many lattice defects, resulting in poor uniformity of the prepared InP, and poor luminescence performance in subsequent coatings.
  • the prior art also involves the preparation of InZnPS, but most of them are synthesized by one-pot synthesis.
  • the disadvantages are: due to the large number of element types and complex structure, it is difficult for the VI group S to be doped into the quantum dots.
  • InZnPS quantum prepared by the one-pot method There are many dot lattice defects and poor optical performance. Therefore, the half-width of the fluorescence emission peak is wider and the quantum efficiency is low.
  • the purpose of the present invention is to provide a II-III-V-VI group quantum dot with fewer crystal defects and excellent optical performance, a preparation method thereof and a quantum dot optoelectronic device.
  • a group II-III-V-VI quantum dot comprising a quantum dot core, the quantum dot core is InZnPS or InZnPSe, and the ultraviolet absorption peak wavelength of the quantum dot core is 570 nm to 610 nm.
  • the half width at half maximum of the ultraviolet absorption peak of the quantum dot core is 22-24 nm.
  • the size of the aforementioned quantum dot core is 4 to 5 nm.
  • the group II-III-V-VI quantum dots further include a shell layer covering the core of the quantum dot, and the shell layer is selected from one or more of the following: ZnSe, ZnS, ZnSeS, and the above II-III -V-VI family quantum dots have a fluorescence emission peak wavelength of 610 nm to 650 nm, and the above II-III-V-VI family quantum dots have a fluorescence half-peak width of 37 to 39 nm.
  • the preparation method of the above-mentioned first replenishing liquid includes: reacting the first mixed liquid including the precursor of the first group III element, the precursor of the first group V element and the solvent at 40-100°C, and then adding the first The group VI element precursor continues to react, thereby preparing the above-mentioned first supplementary liquid;
  • the preparation method of the second replenishing liquid includes: reacting a second mixed liquid including a precursor of a first group II element, a precursor of a first group III element, a precursor of a first group V element and a solvent at 40-100°C , And then add the precursor of the first group VI element to continue the reaction, thereby preparing the above-mentioned second supplement liquid.
  • reaction temperature in step S2 is 250-300°C.
  • III-V group quantum dot core is InP
  • II-III-V group quantum dot core is InZnP
  • the ratio of the amount of the first group III element to the first group V element is (10:1) to (1:1)
  • the first group III element is The ratio of the amount of substances of the first group VI element is (5:1) to (1:2).
  • the ratio of the amount of the first group III element to the first group II element is (10:1) to (1:5)
  • the first group III element is The ratio of the amount of the first group V element is (10:1) to (1:1)
  • the ratio of the amount of the first group III element to the amount of the first group VI element is (5:1) ⁇ (1:2).
  • the first group II element precursor is a zinc precursor
  • the first group III element precursor is an indium precursor
  • the first group V element precursor is a phosphorus precursor
  • the first group VI element precursor is For selenium precursor or sulfur precursor.
  • the first mixed liquid or the second mixed liquid further includes a ligand, and the ligand is selected from one or more of the following: trioctylamine, trioctylphosphine, tributylphosphine, and dioctylamine , Octylamine.
  • the following step is further included: purifying the above II-III-V-VI group quantum dot core in the above step S2 and dissolving it in a solvent to transfer the above II-III-V-VI group quantum dot core
  • the second group II element precursor and the second group VI element precursor are added to the core solution.
  • the II-III-V-VI group quantum dot core is coated with a group II-VI shell layer, and then Quantum dots purified from solution.
  • the precursor of the second group II element is a zinc precursor
  • the precursor of the second group VI element is a sulfur precursor, a selenium precursor, or a selenium-sulfur mixed precursor.
  • the quantum dot optoelectronic device includes the above-mentioned II-III-V-VI group quantum dots or the II-III-V- prepared by the above-mentioned preparation method. Group VI quantum dots.
  • the present invention has the beneficial effects that the II-III-V-VI group quantum dots prepared by the present invention have high uniformity, fewer lattice defects, and excellent optical performance.
  • FIG. 1 is the ultraviolet absorption and fluorescence emission spectra of the InZnPS quantum dot core of Example 1;
  • Example 2 is a graph of ultraviolet absorption and fluorescence emission spectra of the InZnPS/ZnSeS core-shell quantum dots of Example 1;
  • Example 3 is an electron micrograph of the InZnPS/ZnSeS core-shell quantum dots of Example 1.
  • the invention provides a method for preparing group II-III-V-VI quantum dots, which includes the following steps:
  • the preparation method of the first replenishing liquid includes: reacting the first mixed liquid including the precursor of the first group III element, the precursor of the first group V element and the solvent at 40-100°C, and then adding the first VI The precursors of the group elements continue to react to prepare the first replenishing solution; or
  • the preparation method of the second replenishing liquid includes: reacting a second mixed liquid including the first group II element precursor, the first group III element precursor, the first group V element precursor and the solvent at 40-100°C, Then, the precursor of the first group VI element is added to continue the reaction, thereby preparing the second supplementary liquid.
  • the invention solves the problem that group VI elements are difficult to dope into the quantum dots when the II-III-V-VI group quantum dots are synthesized by the one-pot method.
  • the preparation method provided by the present invention is to introduce VI group elements into the replenishing liquid, and react at a lower temperature to generate II-III-V-VI group (in some embodiments may also be III-V-VI group) small particles Then add the above-mentioned replenishing solution containing small particle complexes to the solution containing III-V group quantum dot core or II-III-V group quantum dot nucleus, and the compound in the replenishing solution continuously decomposes and grows On the quantum dot nucleus in the solution, the II-III-V-VI quantum dot nucleus is finally obtained.
  • the growth rate and uniformity of the quantum dots can be adjusted by controlling the addition amount and the addition speed of the replenishing liquid, and the VI group elements are introduced at the same time
  • the introduction of group VI elements is conducive to optimizing the lattice structure of the quantum dot core and reducing lattice defects.
  • low temperature is beneficial to the formation of small particle complexes, but too low temperature will make the mixed liquid turbid and precipitate solids, so it is most appropriate to choose 40-100 °C for the reaction .
  • the reaction temperature of step S2 is 250-300° C., and the high temperature is conducive to the decomposition of the complex in the replenishing liquid to grow onto the quantum dot core of the solution.
  • the group III-V quantum dot core in the present invention may be but not limited to InP, and the group II-III-V quantum dot core may be but not limited to InZnP.
  • the peak positions of the ultraviolet absorption peaks of the III-V quantum dot core and the II-III-V quantum dot core in step S1 are between 430 nm and 530 nm.
  • the preparation methods of the III-V group quantum dot core and the II-III-V group quantum dot core can refer to the prior art, and the preparation method is not limited in the present invention.
  • the ratio of the amount of the first group III element to the first group V element is (10:1) to (1:1), and the first group III element and the first group
  • the ratio of the amount of substances of group VI elements is (5:1) to (1:2).
  • the ratio of the amount of the first group III element to the first group II element is (10:1) to (1:5)
  • the first group III element is The ratio of the amount of the first group V element is (10:1) to (1:1)
  • the ratio of the amount of the first group III element to the first group VI element is (5:1) to (1 :2).
  • the first group II element precursor is a zinc precursor
  • the first group III element precursor is an indium precursor
  • the first group V element precursor is a phosphorus precursor
  • the first group VI element precursor is Selenium precursor or sulfur precursor.
  • the zinc precursor can be but not limited to zinc carboxylate
  • the indium precursor can be but not limited to indium carboxylate
  • the phosphorus precursor can be but not limited to tris(trimethylsilyl)phosphine
  • the selenium precursor can be but not limited to tris Octylphosphine selenium, tributylphosphine selenium, octadecene-selenium, Se-ODE suspension, tris(trimethylsilyl)selenium
  • the sulfur precursor can be but not limited to trioctylphosphine sulfide, tributyl Phosphine sulfur, octadecene-sulfur, alkyl mercaptan, tris(trimethylsily
  • the first mixed solution or the second mixed solution further includes a ligand
  • the ligand may be, but not limited to, trioctylamine, trioctylphosphine, tributylphosphine, dioctylamine, and octylamine.
  • the replenishing solution contains InZnPS small particle complex.
  • the ligand can adjust the reaction speed, control the size and uniformity of the complex during its synthesis, and can also improve its stability during the storage and use of the replenishing solution. .
  • the ultraviolet absorption peak wavelength of the II-III-V-VI group quantum dot core prepared by the present invention is 570 nm to 610 nm, and the half width of the ultraviolet absorption peak is 22 to 24 nm.
  • the size of the II-III-V-VI group quantum dot core prepared by the present invention is 4-5 nm, and the above-mentioned size can be understood as the average size of the quantum dot core.
  • step S2 the following steps may be included: S3, purifying the II-III-V-VI group quantum dot core of step S2 and dissolving it in a solvent to convert the II-III-V-VI group quantum dot core solution Add the second group II element precursors and the second group VI element precursors to the second group, after a period of reaction, the II-III-V-VI group quantum dot core is covered with a group II-VI shell layer, and then from Quantum dots prepared by solution purification.
  • the II-III-V-VI group quantum dot core has a good lattice match with the II-VI group shell layer, and the core-shell quantum dot formed after the shell layer has excellent luminescence performance.
  • the second group II element precursor is a zinc precursor
  • the second group VI element precursor is a sulfur precursor, a selenium precursor, or a selenium-sulfur mixed precursor.
  • the II-III-V-VI/II-VI core-shell quantum dots prepared by the present invention have a fluorescence emission wavelength of 610 nm to 650 nm, a fluorescence half-peak width of 37 to 39 nm, and a quantum efficiency of more than 70% .
  • the present invention also provides a quantum dot optoelectronic device, which includes the II-III-V-VI group quantum dots prepared by the present invention.
  • the quantum dot optoelectronic device may be an OLED device, a QLED device, an LED device, a quantum dot laser, a quantum dot infrared light detector, a quantum dot single photon emitting device, and the like.
  • FIG. 1 shows the ultraviolet absorption and fluorescence emission spectra of the InZnPS quantum dot core of Example 1.
  • Example 1 Extract twice with methanol, precipitate with acetone and centrifuge, and dissolve the precipitate in toluene In, the InZnPS/ZnSeS quantum dot solution was obtained, and the absorption spectrum, emission spectrum and electron microscope test were performed.
  • 2 is the ultraviolet absorption and fluorescence emission spectra of the InZnPS/ZnSeS core-shell quantum dots of Example 1.
  • 3 is an electron micrograph of the InZnPS/ZnSeS core-shell quantum dots of Example 1.
  • Example 2 The difference between Example 2 and Example 1 lies in the step (1) the synthesis of InZnPS replenishing solution, and the steps (2) and (3) are the same.
  • Example 2 The synthesis of InZnPS replenishing solution in Example 2 is: 0.5mmol In(MA) 3 (indium myristate), 0.3mmol Zn(MA) 2 (zinc myristate), 0.4mmol TMS-P (three (three Methyl silicon) phosphine), 0.5mmol trioctylamine and 10.0g octadecene were added to a 100mL three-necked flask, and the three-necked flask was heated to 40°C under N 2 exhaust, and the reaction temperature was kept at 40°C for 30 minutes Afterwards, 0.2mmol S-ODE was added, the reaction was continued for 10 minutes and then it was cooled to room temperature to form an InZnPS replenishing solution.
  • In(MA) 3 indium myristate
  • Zn(MA) 2 zinc myristate
  • TMS-P three (three Methyl silicon) phosphine
  • Example 3 The difference between Example 3 and Example 1 lies in the step (1) the synthesis of InZnPS replenishing solution, and the steps (2) and (3) are the same.
  • Example 3 The synthesis of InZnPS replenishing solution in Example 3 is: 1mmol In(MA) 3 (indium myristate), 0.6mmol Zn(MA) 2 (zinc myristate), 0.8mmol TMS-P (three (trimethyl) Phosphine), 1.0mmol trioctylamine and 20.0g octadecene were added to a 100mL three-necked flask, and the three-necked flask was heated to 100°C under N 2 exhaust, and the reaction temperature was kept at 100°C for 30 minutes. , Add 0.4mmol S-ODE, continue to react for 10 minutes and then cool to room temperature to form InZnPS replenishing solution.
  • In(MA) 3 indium myristate
  • Zn(MA) 2 zinc myristate
  • TMS-P three (trimethyl) Phosphine
  • 1.0mmol trioctylamine and 20.0g octadecene were added to a 100mL
  • the InZnPSe replenishing solution was slowly added dropwise to the InP core solution with a dropping rate of 5 mL/h. After the dripping is completed, it is lowered to room temperature to obtain a mixed solution containing InZnPSe quantum dots. It was extracted twice with methanol, precipitated with acetone and centrifuged, and the precipitate was dissolved in ODE to obtain an InZnPSe quantum dot solution, which was subjected to absorption spectrum, emission spectrum and electron microscopy tests.
  • Example 5 lies in the step (3) synthesis of core-shell quantum dots, and steps (1) and (2) are the same.
  • Example 5 The synthesis of core-shell quantum dots in Example 5 is: add 0.8mmol zinc stearate, 2.4mmol oleic acid, 0.5mmol trioctylphosphine and 20.0g octadecene into a 100mL three-necked flask, and place the three-necked flask in N 2 Heat to 180°C under exhaust, keep at 180°C for 30 minutes and then increase to 300°C, inject the InZnPS quantum dot solution and react for 10 minutes, then add 0.8mmol Se-TOP (selenium-trioctyl phosphine) to it, React at 300°C for 30 minutes and drop to room temperature to obtain a product system containing InZnPS/ZnSe. Extract twice with methanol, precipitate with acetone and centrifuge, and dissolve the precipitate in toluene to obtain InZnPS/ZnSe quantum dot solution, and perform absorption spectrum , Emission spectrum and electron microscope test
  • Example 6 The difference between Example 6 and Example 1 lies in the step (3) synthesis of core-shell quantum dots, and steps (1) and (2) are the same.
  • Example 5 The synthesis of core-shell quantum dots in Example 5 is: add 0.8mmol zinc stearate, 2.4mmol oleic acid, 0.5mmol trioctylphosphine and 20.0g octadecene into a 100mL three-necked flask, and place the three-necked flask in N 2 Heat to 180°C under exhaust, keep at 180°C for 30 minutes and then increase to 300°C, inject the InZnPS quantum dot solution and react for 10 minutes, and then add 0.8mmol S-TOP (sulfur-trioctyl phosphine) to it, Reacted at 300°C for 30 minutes, and dropped to room temperature to obtain a product system containing InZnPS/ZnS. Extracted twice with methanol, precipitated with acetone and centrifuged, and dissolved the precipitate in toluene to obtain an InZnPS/ZnS quantum dot solution. , Emission spectrum and electron microscope test.
  • an InP core solution After reacting at 300°C for 5 minutes, an InP core solution is obtained; keeping the reaction temperature at 300°C, slowly add the InZnP supplementing solution to the InP core solution dropwise at a rate of 5 mL/h. After the addition is complete, the solution is reduced to room temperature to obtain The mixture of InZnP quantum dots was extracted twice with methanol, precipitated with acetone and centrifuged, and the precipitate was dissolved in ODE to obtain an InZnP quantum dot solution, which was subjected to absorption spectrum, emission spectrum and electron microscopy tests.
  • InP replenisher 0.8mmol In(MA) 3 (indium myristate), 0.5mmol TMS-P (tris(trimethylsilyl) phosphine), 0.7mmol trioctylamine and 15.0g ten
  • the octene was added to a 100 mL three-necked flask, and the three-necked flask was heated to 70° C. under the state of N 2 exhaust, kept at the reaction temperature of 70° C. for 30 min, and then dropped to room temperature to form an InP supplement liquid.
  • the InZnPS core solution was obtained, which was extracted twice with methanol, precipitated with acetone and centrifuged, and the precipitate was dissolved in ODE.
  • the InZnPS quantum dot solution was obtained, and the absorption spectrum, emission spectrum and electron microscope test were performed.
  • the test results of the UV absorption peak wavelength, half-width at half maximum, quantum efficiency, and average particle size of the quantum dot cores of the foregoing embodiments and comparative examples are shown in Table 1.
  • Ultraviolet absorption spectrometer was used to test the UV absorption peak wavelength and half-width of the quantum dot core, and the transmission electron microscope was used to test the average particle size of the quantum dot core.
  • Example 1 InZnPS 590 23.5 42.5 4.6
  • Example 2 InZnPS 570 22.0 45.6 4.0
  • Example 3 InZnPS 610 24.0 41.8 5.0
  • Example 4 InZnPSe 590 22.8 39.1 4.1
  • Example 5 InZnPS 590 23.3 43.7 4.5
  • Example 6 InZnPS 590 23.8 42.1 4.6
  • Example 7 InZnPS 592 24.0 40.6
  • Comparative example 1 InZnP 585 32.6 10.4 3.8
  • Comparative example 2 InZnP 588 35.5 6.5 3.7
  • Comparative example 3 InZnPS 590 38.0 8.5 3.6
  • Table 2 shows the test results of the fluorescence emission peak wavelength, half-width, quantum efficiency and average particle size of the core-shell quantum dots of the above embodiments and comparative examples.
  • the fluorescence emission spectrometer was used to test the fluorescence emission peak and half-width of the core-shell quantum dots, and the transmission electron microscope was used to test the average particle size of the quantum dot core.
  • the quantum efficiency detection method was: using a 450nm blue LED lamp as the backlight spectrum and using integral The balls test the blue backlight spectrum and the spectrum through the quantum dot composite material respectively, and use the integrated area of the spectrum to calculate the luminous efficiency of the quantum dot.
  • Quantum efficiency (quantum dot emission peak area)/(blue backlight peak area-unabsorbed blue peak area through quantum dot composite)*100%.
  • Example 1 InZnPS/ZnSeS 630 38.0 74.5 6.0
  • Example 2 InZnPS/ZnSeS 610 37.0 75.8 5.4
  • Example 3 InZnPS/ZnSeS 650 39.0 70.6 6.5
  • Example 4 InZnPSe/ZnSeS 628 38.5 70.8 5.8
  • Example 5 InZnPS/ZnSe 629 37.8 72.5 6.1
  • Example 7 InZnPS/ZnSeS 632 39.0 71.0 5.8
  • Comparative example 1 InZnP/ZnSeS 625 48.5 53.0 4.6
  • Comparative example 2 InZnP/ZnSeS 627 50.6 52.8
  • Comparative example 3 InZnPS/ZnSeS 629 54.0 48.5 4.2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)

Abstract

本发明公开了一种II-III-V-VI族量子点、其制备方法及及量子点光电器件。II-III-V-VI族量子点的制备方法包括以下步骤：S1，提供含有III-V族量子点核的第一溶液，或者提供含有II-III-V族量子点核的第二溶液；S2，向第一溶液中加入第二补加液，或者向第二溶液中加入第一补加液，反应后得到II-III-V-VI族量子点核；其中，将包括第一III族元素前体、第一V族元素前体以及溶剂的第一混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得第一补加液；将包括第一II族元素前体、第一III族元素前体、第一V族元素前体以及溶剂的第二混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得所述第二补加液。本发明制得的II-III-V-VI族量子点均一度高、晶格缺陷少，光学性能优良。

Description

一种II-III-V-VI族量子点、其制备方法及量子点光电器件 技术领域
本发明涉及量子点材料技术领域，尤其涉及一种II-III-V-VI族量子点、其制备方法及量子点光电器件。
背景技术
量子点材料是尺寸在纳米级的无机材料，具有优良的发光性能，在显示、照明和生物等领域具有广阔的应用前景。相比荧光粉等发光材料，量子点具有发光范围可调、荧光半峰宽窄、量子效率高、稳定性强等优势。考虑到环保因素，现有的含镉量子点材料在应用中受到很大限制，以磷化铟为代表的无镉量子点是近年来的研发重点。在磷化铟成核中，具有以共价键结合、成核速度快、晶格缺陷多等特点，导致其荧光发射半峰宽较宽，量子效率较低。尤其是红光量子点，由于其需要较大的成核尺寸，进一步增加了其制备难度。另外，本征磷化铟的晶格缺陷较多，量子效率很低，需要通过在量子点核外包覆壳层，来提升发光性能。但是，III-V族的InP量子点，与常用的II-VI族ZnSe或ZnS壳层之间晶格不匹配度较高，导致包覆效果较差。
由于大颗粒InP一步成核较困难，通常需要后续补加前驱体来促进核的生长。现有技术制备InP尤其是红光InP，主要是将In、P源前体或者InP小粒子，补加至InP初始核中，形成大颗粒InP。但其有以下缺点：1、补加液易自成核，形成小颗粒InP，影响InP的生长速度和均一度；2、由于InP的自身结构，补加液中InP初始核的生长不均一，晶格缺陷较多，造成制备的InP均一度差，后续包覆发光性能差。
现有技术也涉及InZnPS的制备，但多为一锅法合成，其缺点为：由于元素 种类较多，结构复杂，VI族的S较难掺杂到量子点中，一锅法制备的InZnPS量子点晶格缺陷较多，光学性能较差。因此其荧光发射峰半峰宽较宽，量子效率较低。
发明内容
为了克服现有技术的不足，本发明的目的在于提供一种晶格缺陷少、光学性能优良的II-III-V-VI族量子点、其制备方法及量子点光电器件。
根据本发明的一个方面，提供一种II-III-V-VI族量子点，包括量子点核，上述量子点核为InZnPS或InZnPSe，上述量子点核的紫外吸收峰波长为570nm～610nm，上述量子点核的紫外吸收峰的半半峰宽为22～24nm。
进一步地，上述量子点核的尺寸为4～5nm。
进一步地，上述II-III-V-VI族量子点还包括包覆于上述量子点核外的壳层，上述壳层选自以下一层或多层：ZnSe、ZnS、ZnSeS，上述II-III-V-VI族量子点的荧光发射峰波长为610nm～650nm，上述II-III-V-VI族量子点的荧光半峰宽为37～39nm。
根据本发明的另一个方面，提供一种II-III-V-VI族量子点的制备方法，包括以下步骤：
S1，提供含有III-V族量子点核的第一溶液，或者提供含有II-III-V族量子点核的第二溶液；
S2，向上述第一溶液中加入第二补加液，或者向上述第二溶液中加入第一补加液，反应后得到II-III-V-VI族量子点核；
其中，上述第一补加液的制备方法包括：将包括第一III族元素前体、第一V族元素前体以及溶剂的第一混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得上述第一补加液；
上述第二补加液的制备方法包括：将包括第一II族元素前体、第一III族元素前体、第一V族元素前体以及溶剂的第二混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得上述第二补加液。
进一步地，上述步骤S2的反应温度为250～300℃。
进一步地，上述III-V族量子点核为InP，上述II-III-V族量子点核为InZnP。
进一步地，上述第一补加液中，上述第一III族元素与上述第一V族元素的物质的量之比为(10:1)～(1:1)，上述第一III族元素与上述第一VI族元素的物质的量之比为(5:1)～(1:2)。
进一步地，上述第二补加液中，上述第一III族元素与上述第一II族元素的物质的量之比为(10:1)～(1:5)，上述第一III族元素与上述第一V族元素的物质的量之比为(10:1)～(1:1)，上述第一III族元素与上述第一VI族元素的物质的量之比为(5:1)～(1:2)。
进一步地，上述第一II族元素前体为锌前体，上述第一III族元素前体为铟前体，上述第一V族元素前体为磷前体，上述第一VI族元素前体为硒前体或硫前体。
进一步地，上述第一混合液或上述第二混合液中还包括配体，上述配体选自以下一种或多种：三辛胺、三辛基膦、三丁基膦、二辛基胺、辛胺。
进一步地，上述步骤S2之后还包括以下步骤：提纯上述步骤S2中的上述II-III-V-VI族量子点核并将其溶于溶剂中，向上述II-III-V-VI族量子点核溶液中加入第二II族元素前体以及第二VI族元素前体，反应一段时间后，在上述II-III-V-VI族量子点核外包覆上II-VI族壳层，然后从溶液提纯制得的量子点。
进一步地，上述第二II族元素前体为锌前体，上述第二VI族元素前体为硫前体、硒前体或硒硫混合前体。
根据本发明的又一个方面，提供一种量子点光电器件，上述量子点光电器件包括上述的II-III-V-VI族量子点或由上述的制备方法制备而成的II-III-V-VI族量子点。
相比现有技术，本发明的有益效果在于：本发明制得的II-III-V-VI族量子点均一度高、晶格缺陷少，光学性能优良。
附图说明
图1为实施例1的InZnPS量子点核的紫外吸收以及荧光发射谱图；
图2为实施例1的InZnPS/ZnSeS核壳量子点的紫外吸收和荧光发射谱图；
图3为实施例1的InZnPS/ZnSeS核壳量子点的电子显微镜照片。
具体实施方式
下面，结合具体实施方式，对本发明做进一步描述，需要说明的是，在不相冲突的前提下，以下描述的各实施例之间或各技术特征之间可以任意组合形成新的实施例。
需要说明的是，本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换，以便这里描述的本申请的实施例。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含，例如，包含了一系列步骤或单元的过程、方法、系统、产品或设备不必限于清楚地列出的那些步骤或单元，而是可包括没有清楚地列出的或对于这些过程、方法、产品或设备固有的其它步骤或单元。
本发明提供一种II-III-V-VI族量子点的制备方法，包括以下步骤：
S1，提供含有III-V族量子点核的第一溶液，或者提供含有II-III-V族量子 点核的第二溶液；
S2，向第一溶液中加入第二补加液，或者向第二溶液中加入第一补加液，反应后得到II-III-V-VI族量子点核；
其中，第一补加液的制备方法包括：将包括第一III族元素前体、第一V族元素前体以及溶剂的第一混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得第一补加液；或者
第二补加液的制备方法包括：将包括第一II族元素前体、第一III族元素前体、第一V族元素前体以及溶剂的第二混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得第二补加液。
本发明解决了一锅法合成II-III-V-VI族量子点时，VI族元素难以掺杂到量子点中的问题。本发明提供的制备方法是在补加液中引入VI族元素，在较低的温度下反应生成II-III-V-VI族(一些实施例中也可以是III-V-VI族)小粒子的复合物，然后将上述含有小粒子复合物的补加液加入含有III-V族量子点核或II-III-V族量子点核的溶液中，补加液中的复合物不断分解从而生长在溶液中的量子点核上，最终得到II-III-V-VI量子点核，通过控制补加液的加入量以及加入速度可以调节量子点的生长速度和均一度，同时将VI族元素引入到量子点核中，VI族元素的引入有利于优化量子点核的晶格结构，减少晶格缺陷。
在第一补加液和第二补加液的制备方法中，低温有利于小粒子复合物的形成，但过低温度会使混合液浑浊析出固体，因此选择40～100℃下进行反应最为合适。
在一些实施例中，步骤S2的反应温度为250～300℃，高温有利于补加液中的复合物分解从而生长到溶液的量子点核上。
本发明所说的III-V族量子点核可以是但不限于InP，II-III-V族量子点核可 以是但不限于InZnP。
步骤S1中的III-V族量子点核以及II-III-V族量子点核的紫外吸收峰的峰位置在430～530nm之间。III-V族量子点核以及II-III-V族量子点核的制备方法可以参考现有技术，本发明不限制其制备方法。
在一些实施例中，第一补加液中，第一III族元素与第一V族元素的物质的量之比为(10:1)～(1:1)，第一III族元素与第一VI族元素的物质的量之比为(5:1)～(1:2)。
在另一些实施例中，第二补加液中，第一III族元素与第一II族元素的物质的量之比为(10:1)～(1:5)，第一III族元素与第一V族元素的物质的量之比为(10:1)～(1:1)，第一III族元素与第一VI族元素的物质的量之比为(5:1)～(1:2)。
在一些实施例中，第一II族元素前体为锌前体，第一III族元素前体为铟前体，第一V族元素前体为磷前体，第一VI族元素前体为硒前体或硫前体。锌前体可以是但不限于羧酸锌；铟前体可以是但不限于羧酸铟；磷前体可以是但不限于三(三甲基硅)膦；硒前体可以是但不限于三辛基膦硒、三丁基膦硒、十八烯-硒、Se-ODE悬浊液、三(三甲基硅)硒；硫前体可以是但不限于三辛基膦硫、三丁基膦硫、十八烯-硫、烷基硫醇、三(三甲基硅)硫。
在一些实施例中，第一混合液或第二混合液中还包括配体，配体可以是但不限于三辛胺、三辛基膦、三丁基膦、二辛基胺、辛胺。补加液中含有InZnPS小粒子复合物，配体在其合成过程中可以起到调节反应速度，控制复合物尺寸和均一度的作用，也可以在补加液的存放和使用中提高其稳定性。
在一些实施例中，本发明制备得到的II-III-V-VI族量子点核的紫外吸收峰波长为570nm～610nm，紫外吸收峰半半峰宽为22～24nm。
在一些优选的实施例中，本发明制备得到的II-III-V-VI族量子点核的尺寸为 4～5nm，上述尺寸可以理解为量子点核的平均尺寸。
进一步地，步骤S2之后还可以包括以下步骤：S3，提纯步骤S2的II-III-V-VI族量子点核并将其溶于溶剂中，向II-III-V-VI族量子点核溶液中加入第二II族元素前体以及第二VI族元素前体，反应一段时间后，在所述II-III-V-VI族量子点核外包覆上II-VI族壳层，然后从溶液提纯制得的量子点。
II-III-V-VI族量子点核与II-VI族壳层的晶格匹配度好，包覆壳层后形成的核壳量子点的发光性能优良。
在一些实施例中，第二II族元素前体为锌前体，第二VI族元素前体为硫前体、硒前体或硒硫混合前体。
在一些实施例中，本发明制备得到的II-III-V-VI/II-VI核壳量子点的荧光发射波长为610nm～650nm，荧光半峰宽为37～39nm，量子效率在70％以上。
本发明还提供一种量子点光电器件，该量子点光电器件包括本发明制备得到的II-III-V-VI族量子点。量子点光电器件可以是OLED器件、QLED器件、LED器件、量子点激光器、量子点红外光探测器、量子点单光子发射器件等。
【实施例1】
(1)InZnPS补加液的合成：将0.8mmol In(MA) 3(十四酸铟)、0.5mmol Zn(MA) 2(十四酸锌)、0.5mmol TMS-P(三(三甲基硅)膦)、0.7mmol三辛胺和15.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至70℃，在反应温度70℃下保持30min后，加入0.4mmol S-ODE，继续反应10min后降至室温，形成InZnPS补加液。
(2)InZnPS量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、1.1mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热 至180℃，在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)和0.3mmol三辛胺混合液快速注入后升温至300℃，在300℃下反应5min后得到InP核溶液；保持反应温度为300℃，将InZnPS补加液缓慢滴加至InP核溶液中，滴加速度为5mL/h，滴加完毕后降至室温，得到含有InZnPS量子点的混合液，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE(十八烯)中，得到InZnPS量子点溶液，进行吸收光谱、发射光谱和电镜测试。图1为实施例1的InZnPS量子点核的紫外吸收以及荧光发射谱图。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnPS量子点溶液注入后反应10min，再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnPS/ZnSeS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnPS/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。图2为实施例1的InZnPS/ZnSeS核壳量子点的紫外吸收和荧光发射谱图。图3为实施例1的InZnPS/ZnSeS核壳量子点的电镜照片。
【实施例2】
实施例2与实施例1的不同之处在于步骤(1)InZnPS补加液的合成，步骤(2)、(3)均相同。
实施例2中InZnPS补加液的合成为：将0.5mmol In(MA) 3(十四酸铟)、0.3mmol Zn(MA) 2(十四酸锌)、0.4mmol TMS-P(三(三甲基硅)膦)、0.5mmol三辛胺和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至40℃，在反应温度40℃下保持30min后，加入0.2mmol S-ODE，继续 反应10min后降至室温，形成InZnPS补加液。
【实施例3】
实施例3与实施例1的不同之处在于步骤(1)InZnPS补加液的合成，步骤(2)、(3)均相同。
实施例3中InZnPS补加液的合成为：将1mmol In(MA) 3(十四酸铟)、0.6mmol Zn(MA) 2(十四酸锌)、0.8mmol TMS-P(三(三甲基硅)膦)、1.0mmol三辛胺和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至100℃，在反应温度100℃下保持30min后，加入0.4mmol S-ODE，继续反应10min后降至室温，形成InZnPS补加液。
【实施例4】
(1)InZnPSe补加液的合成：将0.5mmol In(MA) 3(十四酸铟)、0.3mmol Zn(MA) 2(十四酸锌)、0.4mmol TMS-P(三(三甲基硅)膦)、0.5mmol三辛胺和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至40℃。在反应温度40℃下保持30min后，加入0.2mmol Se-ODE，继续反应10min后降至室温，形成InZnPSe补加液。
(2)InZnPSe量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、1.1mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃。在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)和0.3mmol三辛胺混合液快速注入后升温至300℃，在300℃下反应5min后得到InP核溶液。保持反应温度为300℃，将InZnPSe补加液缓慢滴加至InP核溶液中，滴加速度为5mL/h。滴加完毕后降至室温，得到含有InZnPSe量子点的混合液。用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE中，得到InZnPSe量子点溶液，进行吸收光谱、发射光谱和电镜测试。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃。在180℃保持30min后升至300℃，将InZnPSe量子点溶液注入后反应10min。再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min。降至室温得到含有InZnPSe/ZnSeS的产物体系。用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnPSe/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【实施例5】
实施例5与实施例1的不同之处在于步骤(3)核壳量子点的合成，步骤(1)、(2)均相同。
实施例5中核壳量子点的合成为：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnPS量子点溶液注入后反应10min，再向其中加入0.8mmol Se-TOP(硒-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnPS/ZnSe的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnPS/ZnSe量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【实施例6】
实施例6与实施例1的不同之处在于步骤(3)核壳量子点的合成，步骤(1)、(2)均相同。
实施例5中核壳量子点的合成为：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnPS 量子点溶液注入后反应10min，再向其中加入0.8mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnPS/ZnS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnPS/ZnS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【实施例7】
(1)InPS补加液的合成：将0.8mmol In(MA) 3(十四酸铟)、0.5mmol TMS-P(三(三甲基硅)膦)、0.7mmol三辛胺和15.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至70℃，在反应温度70℃下保持30min后，加入0.4mmol S-ODE，继续反应10min后降至室温，形成InZnPS补加液。
(2)InZnPS量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、0.1mmol Zn(Ac) 2(醋酸锌)、1.3mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)和0.3mmol三辛胺混合液快速注入后升温至300℃，在300℃下反应5min后得到InZnP核溶液；保持反应温度为300℃，将InPS补加液缓慢滴加至InZnP核溶液中，滴加速度为5mL/h，滴加完毕后降至室温，得到含有InZnPS量子点的混合液，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE中，得到InZnPS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnPS量子点溶液注入后反应10min，再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnPS/ZnSeS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯 中，得到InZnPS/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【对比例1】
(1)InZnP补加液的合成：将0.8mmol In(MA) 3(十四酸铟)、0.5mmol Zn(MA) 2(十四酸锌)、0.5mmol TMS-P(三(三甲基硅)膦)、0.7mmol三辛胺和15.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至70℃，在反应温度70℃下保持30min后降至室温，形成InZnP补加液。
(2)InZnP量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、1.1mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)和0.3mmol三辛胺混合液快速注入后升温至300℃，在300℃下反应5min后得到InP核溶液；保持反应温度为300℃，将InZnP补加液缓慢滴加至InP核溶液中，滴加速度为5mL/h，滴加完毕后降至室温，得到含有InZnP量子点的混合液，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE中，得到InZnP量子点溶液，进行吸收光谱、发射光谱和电镜测试。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnP量子点溶液注入后反应10min，再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnP/ZnSeS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnPS/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【对比例2】
(1)InP补加液的合成：将0.8mmol In(MA) 3(十四酸铟)、0.5mmol TMS-P (三(三甲基硅)膦)、0.7mmol三辛胺和15.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至70℃，在反应温度70℃下保持30min后降至室温，形成InP补加液。
(2)InZnP量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、0.1mmol Zn(Ac) 2(醋酸锌)、1.3mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)和0.3mmol三辛胺混合液快速注入后升温至300℃，在300℃下反应5min后得到InZnP核溶液；保持反应温度为300℃，将InP补加液缓慢滴加至InZnP核溶液中，滴加速度为5ml/h，滴加完毕后降至室温，得到含有InZnP量子点的混合液，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE中，得到InZnP量子点溶液，进行吸收光谱、发射光谱和电镜测试。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnP量子点溶液注入后反应10min，再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnP/ZnSeS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnP/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
【对比例3】
(1)InZnPS量子点核的合成：将0.3mmol In(Ac) 3(醋酸铟)、0.1mmol Zn(Ac) 2(醋酸锌)、1.3mmol十四酸和10.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后降至室温，将0.2mmol TMS-P(三(三甲基硅)膦)、0.3mmol三辛胺和0.1mmol S-ODE混合液快速注入后 升温至300℃，在300℃下反应5min后得到InZnPS核溶液，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在ODE中，得到InZnPS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
(3)核壳量子点的合成：将0.8mmol硬脂酸锌、2.4mmol油酸、0.5mmol三辛基膦和20.0g十八烯加入到100mL三口烧瓶中，并将该三口烧瓶在N 2排气状态下加热至180℃，在180℃保持30min后升至300℃，将InZnPS量子点溶液注入后反应10min，再向其中加入0.3mmol Se-TOP(硒-三辛基膦)、0.5mmol S-TOP(硫-三辛基膦)后，在300℃下反应30min，降至室温得到含有InZnPS/ZnSeS的产物体系，用甲醇进行两次萃取，并用丙酮沉淀离心，并将沉淀溶解在甲苯中，得到InZnP/ZnSeS量子点溶液，进行吸收光谱、发射光谱和电镜测试。
以上各实施例以及对比例的量子点核的紫外吸收峰波长、半半峰宽、量子效率以及平均颗粒尺寸的测试结果见表1。采用紫外吸收光谱仪测试量子点核的紫外吸收峰波长以及半半峰宽，采用透射电子显微镜测试量子点核的平均颗粒尺寸，量子效率的检测方法为：利用450nm蓝色LED灯作为背光光谱，利用积分球分别测试蓝色背光光谱和透过量子点复合材料的光谱，利用谱图的积分面积计算量子点发光效率。量子效率＝(量子点发射峰面积)/(蓝色背光峰面积-透过量子点复合物未被吸收的蓝色峰面积)*100％。
表1
  量子点核 紫外吸收峰/nm 半半峰宽/nm 量子效率/％ 平均颗粒尺寸/nm
实施例1 InZnPS 590 23.5 42.5 4.6
实施例2 InZnPS 570 22.0 45.6 4.0
实施例3 InZnPS 610 24.0 41.8 5.0
实施例4 InZnPSe 590 22.8 39.1 4.1
实施例5 InZnPS 590 23.3 43.7 4.5
实施例6 InZnPS 590 23.8 42.1 4.6
实施例7 InZnPS 592 24.0 40.6 4.4
对比例1 InZnP 585 32.6 10.4 3.8
对比例2 InZnP 588 35.5 6.5 3.7
对比例3 InZnPS 590 38.0 8.5 3.6
以上各实施例以及对比例的核壳量子点的荧光发射峰波长、半峰宽、量子效率以及平均颗粒尺寸的测试结果见表2。采用荧光发射光谱仪测试核壳量子点的荧光发射峰以及半峰宽，采用透射电子显微镜测试量子点核的平均颗粒尺寸，量子效率的检测方法为：利用450nm蓝色LED灯作为背光光谱，利用积分球分别测试蓝色背光光谱和透过量子点复合材料的光谱，利用谱图的积分面积计算量子点发光效率。量子效率＝(量子点发射峰面积)/(蓝色背光峰面积-透过量子点复合物未被吸收的蓝色峰面积)*100％。
表2
  核壳量子点 荧光发射峰/nm 半峰宽/nm 量子效率/％ 平均颗粒尺寸/nm
实施例1 InZnPS/ZnSeS 630 38.0 74.5 6.0
实施例2 InZnPS/ZnSeS 610 37.0 75.8 5.4
实施例3 InZnPS/ZnSeS 650 39.0 70.6 6.5
实施例4 InZnPSe/ZnSeS 628 38.5 70.8 5.8
实施例5 InZnPS/ZnSe 629 37.8 72.5 6.1
实施例6 InZnPS/ZnS 631 38.4 70.8 5.9
实施例7 InZnPS/ZnSeS 632 39.0 71.0 5.8
对比例1 InZnP/ZnSeS 625 48.5 53.0 4.6
对比例2 InZnP/ZnSeS 627 50.6 52.8 4.5
对比例3 InZnPS/ZnSeS 629 54.0 48.5 4.2
上述实施方式仅为本发明的优选实施方式，不能以此来限定本发明保护的范围，本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。

Claims (13)

  1. 一种II-III-V-VI族量子点，其特征在于，包括量子点核，所述量子点核为InZnPS或InZnPSe，所述量子点核的紫外吸收峰波长为570nm～610nm，所述量子点核的紫外吸收峰的半半峰宽为22～24nm。
  2. 根据权利要求1所述的II-III-V-VI族量子点，其特征在于，所述量子点核的尺寸为4～5nm。
  3. 根据权利要求1或2所述的II-III-V-VI族量子点，其特征在于，还包括包覆于所述量子点核外的壳层，所述壳层选自以下一层或多层：ZnSe、ZnS、ZnSeS，所述II-III-V-VI族量子点的荧光发射峰波长为610nm～650nm，所述II-III-V-VI族量子点的荧光半峰宽为37～39nm。
  4. 一种II-III-V-VI族量子点的制备方法，其特征在于，包括以下步骤：
    S1，提供含有III-V族量子点核的第一溶液，或者提供含有II-III-V族量子点核的第二溶液；
    S2，向所述第一溶液中加入第二补加液，或者向所述第二溶液中加入第一补加液，反应后得到II-III-V-VI族量子点核；
    其中，所述第一补加液的制备方法包括：将包括第一III族元素前体、第一V族元素前体以及溶剂的第一混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得所述第一补加液；或者
    所述第二补加液的制备方法包括：将包括第一II族元素前体、第一III族元素前体、第一V族元素前体以及溶剂的第二混合液于40～100℃下反应，然后再加入第一VI族元素前体继续反应，从而制得所述第二补加液。
  5. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于， 所述步骤S2的反应温度为250～300℃。
  6. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于，所述III-V族量子点核为InP，所述II-III-V族量子点核为InZnP。
  7. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于，所述第一补加液中，所述第一III族元素与所述第一V族元素的物质的量之比为(10:1)～(1:1)，所述第一III族元素与所述第一VI族元素的物质的量之比为(5:1)～(1:2)。
  8. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于，所述第二补加液中，所述第一III族元素与所述第一II族元素的物质的量之比为(10:1)～(1:5)，所述第一III族元素与所述第一V族元素的物质的量之比为(10:1)～(1:1)，所述第一III族元素与所述第一VI族元素的物质的量之比为(5:1)～(1:2)。
  9. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于，所述第一II族元素前体为锌前体，所述第一III族元素前体为铟前体，所述第一V族元素前体为磷前体，所述第一VI族元素前体为硒前体或硫前体。
  10. 根据权利要求4所述的II-III-V-VI族量子点的制备方法，其特征在于，所述第一混合液或所述第二混合液中还包括配体，所述配体选自以下一种或多种：三辛胺、三辛基膦、三丁基膦、二辛基胺、辛胺。
  11. 根据权利要求4-10任一所述的II-III-V-VI族量子点的制备方法，其特征在于，所述步骤S2之后还包括以下步骤：提纯所述步骤S2中的所述II-III-V-VI族量子点核并将其溶于溶剂中，向所述II-III-V-VI族量子点核溶液中加入第二II族元素前体以及第二VI族元素前体，反应一段时间后，在所述II-III-V-VI族量子点核外包覆上II-VI族壳层，然后从溶液提纯制得的量子点。
  12. 根据权利要求11所述的II-III-V-VI族量子点的制备方法，其特征在于，所述第二II族元素前体为锌前体，所述第二VI族元素前体为硫前体、硒前体或硒硫混合前体。
  13. 一种量子点光电器件，其特征在于，所述量子点光电器件包括权利要求1-3任一所述的量子点或由权利要求4-12任一所述的II-III-V-VI族量子点的制备方法制备而成的量子点。
PCT/CN2020/086244 2019-04-26 2020-04-23 一种ii-iii-v-vi族量子点、其制备方法及量子点光电器件 WO2020216265A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/606,061 US20220220376A1 (en) 2019-04-26 2020-04-23 Group ii-iii-v-vi quantum dot, preparation method therefor and quantum dot optoelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910345254.X 2019-04-26
CN201910345254.XA CN111849456B (zh) 2019-04-26 2019-04-26 一种ii-iii-v-vi族量子点及其制备方法

Publications (1)

Publication Number Publication Date
WO2020216265A1 true WO2020216265A1 (zh) 2020-10-29

Family

ID=72941474

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/086244 WO2020216265A1 (zh) 2019-04-26 2020-04-23 一种ii-iii-v-vi族量子点、其制备方法及量子点光电器件

Country Status (3)

Country Link
US (1) US20220220376A1 (zh)
CN (1) CN111849456B (zh)
WO (1) WO2020216265A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11193062B2 (en) * 2018-01-11 2021-12-07 Samsung Electronics Co., Ltd. Population of quantum dots and a composition including ihe same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101765649A (zh) * 2007-07-31 2010-06-30 纳米技术有限公司 纳米粒子
CN102199425A (zh) * 2010-03-22 2011-09-28 三星电子株式会社 制造量子点的方法
US20140322901A1 (en) * 2013-04-29 2014-10-30 Qd Vision, Inc. Semiconductor nanocrystals, method for preparing, and products
CN105051153A (zh) * 2013-03-15 2015-11-11 纳米技术有限公司 第iii-v族/锌硫属化物合金化的半导体量子点
CN105992807A (zh) * 2014-02-07 2016-10-05 纳米技术有限公司 具有增强的稳定性和发光效率的量子点纳米粒子
CN106479482A (zh) * 2016-09-20 2017-03-08 纳晶科技股份有限公司 InP量子点及其制备方法
CN106701059A (zh) * 2016-11-11 2017-05-24 纳晶科技股份有限公司 InP量子点及其制备方法
KR101768998B1 (ko) * 2016-10-17 2017-08-16 한국기계연구원 나노클러스터를 이용한 양자점의 제조방법
WO2018146120A1 (en) * 2017-02-10 2018-08-16 Merck Patent Gmbh Semiconductor nanosized material
WO2018215396A1 (en) * 2017-05-23 2018-11-29 Merck Patent Gmbh Method for synthesizing a semiconducting nanosized material
CN109439327A (zh) * 2018-10-12 2019-03-08 浙江大学 Iii-v族量子点及其制备方法、含其的发光器件

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101765649A (zh) * 2007-07-31 2010-06-30 纳米技术有限公司 纳米粒子
CN102199425A (zh) * 2010-03-22 2011-09-28 三星电子株式会社 制造量子点的方法
CN105051153A (zh) * 2013-03-15 2015-11-11 纳米技术有限公司 第iii-v族/锌硫属化物合金化的半导体量子点
US20140322901A1 (en) * 2013-04-29 2014-10-30 Qd Vision, Inc. Semiconductor nanocrystals, method for preparing, and products
CN105992807A (zh) * 2014-02-07 2016-10-05 纳米技术有限公司 具有增强的稳定性和发光效率的量子点纳米粒子
CN106479482A (zh) * 2016-09-20 2017-03-08 纳晶科技股份有限公司 InP量子点及其制备方法
KR101768998B1 (ko) * 2016-10-17 2017-08-16 한국기계연구원 나노클러스터를 이용한 양자점의 제조방법
CN106701059A (zh) * 2016-11-11 2017-05-24 纳晶科技股份有限公司 InP量子点及其制备方法
WO2018146120A1 (en) * 2017-02-10 2018-08-16 Merck Patent Gmbh Semiconductor nanosized material
WO2018215396A1 (en) * 2017-05-23 2018-11-29 Merck Patent Gmbh Method for synthesizing a semiconducting nanosized material
CN109439327A (zh) * 2018-10-12 2019-03-08 浙江大学 Iii-v族量子点及其制备方法、含其的发光器件

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ALTINTAS YEMLIHA ET AL.: "Highly Efficient Cd-Free Alloyed Core/Shell Quantum Dots with Optimized Precursor Concentrations", THE JOURNAL OF PHYSICAL CHEMISTRY C, vol. 120, no. 14, 17 March 2016 (2016-03-17), XP055746874, ISSN: 1932-7447, DOI: 20200621173833A *
ALTINTAS YEMLIHA ET AL.: "The Effect of Ligand Chain Length on The Optical Properties of Alloyed Core-Shell InPZnS/ZnS Quantum Dots", JOURNAL OF ALLOYS AND COMPOUNDS, vol. 711, 29 March 2017 (2017-03-29), XP029988129, ISSN: 1873-4669, DOI: 20200621173116 *
HUANG, LU ET AL.: "Synthesis of InPZnS/ZnS Quantum Dots by Continuous Injection of Phosphorus Precursor", ACTA CHIMICA SINICA, vol. 75, no. 3, 31 March 2017 (2017-03-31), ISSN: 0567-7351, DOI: 20200621171430X *
KIM TAEHOON ET AL.: "Large-Scale Synthesis of InPZnS Alloy Quantum Dots with Dodecanethiol as a Composition Controller", THE JOURNAL OF PHYSICAL CHEMISTRY LETTERS, vol. 3, no. 2, 26 December 2011 (2011-12-26), XP055746878, ISSN: 1948-7185, DOI: 20200621172114 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11193062B2 (en) * 2018-01-11 2021-12-07 Samsung Electronics Co., Ltd. Population of quantum dots and a composition including ihe same

Also Published As

Publication number Publication date
CN111849456B (zh) 2021-12-14
US20220220376A1 (en) 2022-07-14
CN111849456A (zh) 2020-10-30

Similar Documents

Publication Publication Date Title
TWI790375B (zh) Ii-ii-vi合金量子點、包括其的器件和量子點組合物及其製備方法
CN108384531B (zh) Iii-v族核壳量子点的制备方法及含其的器件、组合物
CN108929670B (zh) 核壳量子点、其制备方法、器件及组合物
CN106479481B (zh) ZnSe/III-V族/ZnSexS1-x或ZnSe/III-V族/ZnSe/ZnS量子点及其制备方法
CN110317609B (zh) 量子点、其制备方法及光电器件
EP3760692B1 (en) Red-emitting quantum dots having narrow full width at half maximum and emission wavelength for application to high-color-purity display, and preparation method therefor
WO2020224439A1 (zh) 一种核壳量子点、其制备方法及量子点光电器件
CN112266791B (zh) 一种量子点及其制备方法、量子点膜、显示装置
CN110951477A (zh) 一种核壳量子点及其制备方法
KR20190055390A (ko) InP/ZnS 코어/쉘 양자점의 제조방법
CN110819348B (zh) 绿色量子点、其制备方法及其应用
CN115710505B (zh) 一种降低核壳型磷化铟量子点荧光半峰宽的方法
CN110240905B (zh) 合金量子点、其制备方法和应用
US11840655B2 (en) Yellow-red spectral quantum dot, synthesis method therefor and application thereof
CN111849483B (zh) 一种蓝光无镉量子点及其制备方法、量子点光电器件
WO2020216265A1 (zh) 一种ii-iii-v-vi族量子点、其制备方法及量子点光电器件
WO2020259624A1 (zh) Ⅱ-ⅲ-ⅴ-ⅵ合金量子点的制备方法及其应用
KR102103009B1 (ko) 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자
CN112048300B (zh) 一种无镉量子点及其制备方法、量子点光电器件
KR102236316B1 (ko) 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자
KR102236315B1 (ko) 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자
CN110373194B (zh) 核壳型量子点、其制备方法及其应用
KR102184320B1 (ko) 양자점 및 이의 제조방법
CN113549460B (zh) 纳米晶的制备方法
CN113969161B (zh) 量子点的制备方法、量子点及含其的组合物、发光器件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20796233

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20796233

Country of ref document: EP

Kind code of ref document: A1