WO2020216000A1 - 无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法 - Google Patents

无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法 Download PDF

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WO2020216000A1
WO2020216000A1 PCT/CN2020/082057 CN2020082057W WO2020216000A1 WO 2020216000 A1 WO2020216000 A1 WO 2020216000A1 CN 2020082057 W CN2020082057 W CN 2020082057W WO 2020216000 A1 WO2020216000 A1 WO 2020216000A1
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Prior art keywords
emitting diode
inorganic light
light emitting
signal line
touch
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PCT/CN2020/082057
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English (en)
French (fr)
Inventor
杨盛际
董学
陈小川
王辉
卢鹏程
黄冠达
李胜男
Original Assignee
京东方科技集团股份有限公司
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Publication of WO2020216000A1 publication Critical patent/WO2020216000A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]

Definitions

  • the present disclosure relates to the field of display technology, in particular to an inorganic light emitting diode display substrate, a display device, a driving method, and a manufacturing method of the inorganic light emitting diode display substrate.
  • Inorganic light-emitting diodes such as Micro LED
  • OLED organic light-emitting diodes
  • Most of the inorganic light-emitting diodes in the related art are formed on a substrate with a driving circuit using transfer technology, and the inorganic light-emitting diodes are driven by the driving circuit to achieve light emission and display.
  • the touch function is a necessary function for most display devices at present, and how to be compatible with the touch function on the inorganic light emitting diode display device is an urgent problem to be solved.
  • an inorganic light emitting diode display substrate including:
  • a driving circuit layer disposed on the base substrate, the driving circuit layer comprising a driving thin film transistor, a first pad and a second pad, the source or drain of the driving thin film transistor and the first pad Pad connection
  • An inorganic light emitting diode arranged on the driving circuit layer, the inorganic light emitting diode comprising an anode and a cathode, the anode is electrically connected to the first pad, and the cathode is electrically connected to the second pad;
  • the touch driving electrode is multiplexed with the first signal line in the driving circuit layer.
  • the first signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the inorganic light emitting diode display substrate further includes:
  • the touch sensing electrode is multiplexed with the second signal line in the driving circuit layer.
  • the second signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the touch driving electrode and the touch sensing electrode are located between the adjacent inorganic light emitting diodes, and the touch driving electrode and the touch sensing electrode are on the base substrate.
  • the orthographic projection and the orthographic projection of the inorganic light emitting diode on the base substrate do not overlap.
  • the inorganic light emitting diode display substrate further includes: an insulating layer, wherein the drain of the driving thin film transistor is electrically connected to the first pad through a via hole in the insulating layer, thereby The anode of the inorganic light emitting diode is electrically connected.
  • the first voltage signal line is used to provide a power signal to the inorganic light emitting diode
  • the reference potential signal line is used to provide a reference potential to the inorganic light emitting diode
  • the present disclosure also provides an inorganic light emitting diode display device, including an inorganic light emitting diode display substrate and a packaging cover plate for packaging the inorganic light emitting diode display substrate.
  • the inorganic light emitting diode display substrate includes:
  • a driving circuit layer disposed on the base substrate, the driving circuit layer comprising a driving thin film transistor, a first pad and a second pad, the source or drain of the driving thin film transistor and the first pad Pad connection
  • An inorganic light emitting diode arranged on the driving circuit layer, the inorganic light emitting diode comprising an anode and a cathode, the anode is electrically connected to the first pad, and the cathode is electrically connected to the second pad;
  • the touch driving electrode is multiplexed with the first signal line in the driving circuit layer.
  • the inorganic light emitting diode display device further includes:
  • the touch sensing electrode is multiplexed with the second signal line in the driving circuit layer.
  • the inorganic light emitting diode display device further includes:
  • Touch sensing electrodes the touch sensing electrodes are arranged on the package cover.
  • the second signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the inorganic light emitting diode display substrate further includes: an insulating layer, wherein the drain of the driving thin film transistor is electrically connected to the first pad through a via hole in the insulating layer, thereby The anode of the inorganic light emitting diode is electrically connected.
  • the first voltage signal line is used to provide a power signal to the inorganic light emitting diode
  • the reference potential signal line is used to provide a reference potential to the inorganic light emitting diode
  • the present disclosure also provides a driving method, which is applied to an inorganic light emitting diode display device in which both the touch driving electrode and the touch sensing electrode are multiplexed with signal lines, including:
  • the time of one frame of screen is divided into a display period and a touch period.
  • a display signal is input to the touch driving electrode and the touch sensing electrode, and in the touch period, the touch The driving electrodes and the touch sensing electrodes input touch signals.
  • the present disclosure also provides a driving method applied to the above-mentioned inorganic light-emitting diode display device in which only touch driving electrodes and signal lines are multiplexed, including:
  • the time of one frame of screen is divided into a display period and a touch period.
  • a display signal is input to the touch drive electrode, and in the touch period, the touch drive electrode and the touch
  • the touch sensing electrode inputs a touch signal.
  • the present disclosure also provides a method for manufacturing an inorganic light emitting diode display substrate, including:
  • the driving circuit layer including a driving thin film transistor, a first pad and a second pad, and a first electrode of the driving thin film transistor is connected to the first pad; The source or drain of the first electrode;
  • the inorganic light emitting diode including an anode and a cathode, the anode is electrically connected to the first pad, and the cathode is electrically connected to the second pad; as well as
  • a touch drive electrode is formed, and the touch drive electrode is multiplexed with the first signal line in the drive circuit layer.
  • the first signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the manufacturing method of the inorganic light emitting diode display substrate further includes:
  • a touch sensing electrode is formed, and the touch sensing electrode is multiplexed with the second signal line in the driving circuit layer.
  • the second signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the touch driving electrode and the touch sensing electrode are located between the adjacent inorganic light emitting diodes, and the touch driving electrode and the touch sensing electrode are on the base substrate.
  • the orthographic projection and the orthographic projection of the inorganic light emitting diode on the base substrate do not overlap.
  • FIG. 1 is a schematic diagram of the structure of an inorganic light emitting diode display substrate according to some embodiments of the disclosure
  • FIG. 2 is a schematic structural diagram of an inorganic light emitting diode display substrate according to some embodiments of the disclosure
  • FIG. 3 is a schematic diagram of the structure of touch driving electrodes and touch sensing electrodes in some embodiments of the present disclosure
  • FIG. 4 is a schematic structural diagram of an inorganic light emitting diode display device according to some embodiments of the disclosure.
  • FIG. 5 is a schematic diagram of the structure of touch driving electrodes and touch sensing electrodes according to some embodiments of the disclosure.
  • FIG. 6 is a schematic structural diagram of a backplane driving circuit of some embodiments of the disclosure.
  • 7 and 8 are timing diagrams of driving signals of the backplane driving circuit of some embodiments of the disclosure.
  • an inorganic light emitting diode display substrate including:
  • the driving circuit layer includes a driving thin film transistor T, a first pad (Pad) 1111, and a second pad 1112.
  • the first electrode 1091 of the driving thin film transistor Connected to the first pad 1111; the first electrode 1091 is the source or drain of the driving thin film transistor;
  • the inorganic light emitting diode 20 is arranged on the driving circuit layer.
  • the inorganic light emitting diode 20 includes an anode 21 and a cathode 22.
  • the anode 21 is electrically connected to the first gasket 1111, and the cathode 22 is electrically connected to the first spacer 1111. Two pads 1112 are electrically connected;
  • the touch driving electrode 30 is multiplexed with the first signal line in the driving circuit layer.
  • the mutual capacitive touch technology is integrated on the inorganic light emitting diode display substrate to realize the integration of the display function and touch function of the inorganic light emitting diode display device.
  • the touch driving electrode and the signal in the driving circuit layer Line multiplexing eliminates the need for additional processes, reduces process costs, and can also reduce the thickness of the inorganic light-emitting diode display substrate.
  • the base substrate 101 may be a glass substrate or the like.
  • the structure of the driving circuit layer may be referred to as shown in FIG. 1, and the driving circuit layer may include:
  • the buffer layer 102 may be formed of SiNx (silicon nitride) or SiO2 (silicon oxide), or a composite film layer of SiNx and SiO2.
  • the active layer 103 can be formed of a-Si with a thickness of about
  • the first gate insulating layer 104, the first gate insulating layer 104 may be formed of SiO2 or SiNx, or a composite film layer of SiNx and SiO2. When the composite film layer is used, the thickness of SiO2 is about The thickness of SiNx is approximately
  • the second gate insulating layer 106 and the second gate insulating layer 106 may be formed of SiNx.
  • the thickness of the second gate insulating layer 106 is about
  • the second gate metal layer 107, the second gate metal layer 107 is used to form the electrode of the capacitor in the driving circuit layer
  • the first gate metal layer may be formed of Mo or other metal, and the thickness is about
  • the electrodes of the capacitor may also be formed of other metals instead of the gate metal.
  • the interlayer dielectric layer 108 can be formed by using SiO2 or SiNx, or a composite film layer of SiNx and SiO2. When the composite film layer is used, the thickness of SiO2 is about The thickness of SiNx is approximately
  • the source-drain metal layer includes a first electrode 1091, a second electrode 1092, and a VSS signal line 1093.
  • the first electrode 1091 is used to connect to a first voltage signal line.
  • the first electrode 1091 One of and the second electrode 1092 is a source, and the other is a drain.
  • the source and drain metal layers can be formed by a Ti/Al/Ti composite film layer, wherein the thickness of each film layer in the composite film layer can be
  • the flat layer 110; the flat layer 110 may be formed of resin.
  • the first pad 1111 and the second substrate 1112, the first pad 1111 and the second substrate 1112 are used to bind inorganic light-emitting diodes, the first pad 1111 is connected to the first electrode 1091; the second pad 1112 is connected to the VSS The signal line 1093 is connected; the first pad 1111 and the second substrate 1112 can be formed by an ITO/Ag/ITO composite film layer, and the thickness of each film layer in the composite film layer can be
  • the passivation layer 112, the passivation layer 112 can be formed of SiNx, the thickness is about The passivation layer is used to protect the electrode of the inorganic light emitting diode.
  • the black matrix 113 may be formed of a resin material.
  • the black matrix is used for anti-reflection.
  • the above-mentioned driving thin film transistor T includes: an active layer 103, a gate 105, a first electrode 1091, and a second electrode 1092.
  • the above driving includes that the transistor T is a top-gate thin film transistor.
  • It can also be a bottom-gate thin film transistor.
  • the driving circuit layer (the dashed rectangular frame A in FIG. 2 is a part of the driving circuit in the driving circuit layer) specifically includes:
  • First liner 1111 and second liner 1112 are first liner 1111 and second liner 1112;
  • the drain of the driving thin film transistor T is connected to the first pad 1111 through the via 1113 in the insulating layer 110, thereby being connected to the anode 21 of the inorganic light emitting diode 20;
  • the VSS signal line 1093 is connected to the second pad 1112 through the via hole in the insulating layer 110;
  • FIGS. 1 and 2 are only schematic diagrams of the structure of the inorganic light emitting diode display substrate in some embodiments, and the structure of the inorganic light emitting diode display substrate in some embodiments of the present disclosure is not limited thereto.
  • the first signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the first voltage signal line is a signal line used to provide a power signal to the inorganic light emitting diode
  • the reference potential signal line is a signal line used to provide a reference potential to the inorganic light emitting diode.
  • the first voltage signal line may be, for example, a VDD signal line
  • the reference potential signal line may be, for example, a Vint signal line.
  • the inorganic light emitting diode display substrate may further include: touch sensing electrodes, and the touch sensing electrodes may be multiplexed with the second signal line in the driving circuit layer, thereby further The process cost is reduced, and the thickness of the inorganic light emitting diode display substrate is reduced.
  • the second signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the first voltage signal line and the reference potential signal line are vertically crossed and insulated, the touch driving electrode can be multiplexed with the first voltage signal line, and the touch sensing electrode can be multiplexed with the reference potential signal line.
  • FIG. 3 is a schematic diagram of the structure of touch driving electrodes and touch sensing electrodes in some embodiments of the present disclosure.
  • the touch driving electrodes 30 and the touch sensing electrodes 40 are vertically crossed and insulated.
  • the touch drive electrode 30 is multiplexed with the first signal line in the drive circuit layer
  • the touch sensing electrode is multiplexed with the second signal line in the drive circuit layer.
  • multiple first signal lines Connected to form a touch driving electrode 30, and multiple second signal lines are connected to form a touch sensing electrode 40.
  • the touch driving electrode 30 is connected to the signal wiring 31, and the touch sensing electrode 40 is connected to the signal wiring 41.
  • the touch drive electrode 30 and the touch sensing electrode are located between the adjacent inorganic light emitting diodes 20, and the touch drive electrode 30 and the touch
  • the orthographic projection of the control sensing electrode on the base substrate 101 and the orthographic projection of the inorganic light-emitting diode 20 on the base substrate 101 do not overlap, so that the signals of the touch driving electrode 30 and the touch sensing electrode are Will not be shielded by inorganic light-emitting diodes.
  • the inorganic light emitting diodes in the above embodiments may be micro LEDs, mini LEDs, or the like.
  • Some embodiments of the present disclosure further provide an inorganic light emitting diode display device, including the inorganic light emitting diode display substrate in any of the above embodiments and a packaging cover for packaging the inorganic light emitting diode display substrate.
  • the touch driving electrodes and the touch sensing electrodes may both be arranged inside the inorganic light emitting diode display substrate.
  • the touch sensing electrodes may not be arranged in the inorganic light emitting diode display. Inside the substrate.
  • an inorganic light emitting diode display device including:
  • An inorganic light emitting diode display substrate includes:
  • the inorganic light emitting diode 20 is arranged on the driving circuit layer.
  • the inorganic light emitting diode 20 includes an anode 21 and a cathode 22.
  • the anode 21 is electrically connected to the first gasket 1111, and the cathode 22 is electrically connected to the first spacer 1111. Two pads 1112 connected;
  • Touch drive electrodes 30, the touch drive electrodes 30 are multiplexed with the first signal line in the drive circuit layer;
  • the touch sensing electrode 40 is arranged on the package cover 50.
  • the touch sensing electrode 40 is not disposed inside the inorganic light emitting diode display substrate, but is disposed on the package cover 50.
  • the first signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the touch drive electrode is located between the adjacent inorganic light emitting diodes, and the orthographic projection of the touch drive electrode on the base substrate and the inorganic light emitting diode on the base substrate The orthographic projections on do not overlap.
  • the mutual capacitive touch technology is integrated on the inorganic light emitting diode display substrate to realize the integration of the display function and the touch function of the inorganic light emitting diode display device.
  • the touch driving electrode It is multiplexed with the signal line in the driving circuit layer, without additional process, which reduces the process cost, and can also reduce the thickness of the inorganic light emitting diode display substrate.
  • Some embodiments of the present disclosure also provide a manufacturing method of an inorganic light emitting diode display substrate, including:
  • the driving circuit layer including a driving thin film transistor, a first pad and a second pad, and a first electrode of the driving thin film transistor is connected to the first pad; The source or drain of the first electrode;
  • the inorganic light emitting diode including an anode and a cathode, the anode is electrically connected to the first pad, and the cathode is electrically connected to the second pad;
  • the method also includes:
  • a touch drive electrode is formed, and the touch drive electrode is multiplexed with the first signal line in the drive circuit layer.
  • the first signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the manufacturing method of the inorganic light emitting diode display substrate further includes:
  • a touch sensing electrode is formed, and the touch sensing electrode is multiplexed with the second signal line in the driving circuit layer.
  • the second signal line is selected from one of a first voltage signal line, a reference potential signal line, a data line, and a scan line.
  • the touch driving electrode and the touch sensing electrode are located between the adjacent inorganic light emitting diodes, and the touch driving electrode and the touch sensing electrode are on the base substrate.
  • the orthographic projection and the orthographic projection of the inorganic light emitting diode on the base substrate do not overlap.
  • the manufacturing method of the inorganic light emitting diode substrate according to some embodiments of the present disclosure will be described.
  • the manufacturing method of the substrate of the inorganic light emitting diode shown in FIG. 1 includes:
  • Step S11 Provide a base substrate 101
  • Step S12 forming a buffer layer 102 on the base substrate 101; the buffer layer 102 can be formed by using SiNx or SiO2, or a composite film layer of SiNx and SiO2.
  • Step S13 forming an active layer 103; the active layer 103 may be formed of a-Si with a thickness of about
  • Step S14 forming a first gate insulating layer 104.
  • the first gate insulating layer 104 can be formed by using SiO2 or SiNx, or a composite film layer of SiNx and SiO2. When the composite film layer is used, the thickness of SiO2 is about The thickness of SiNx is approximately
  • Step S15 forming a first gate metal layer, the first gate metal layer including the gate 105; the first gate metal layer may be formed of Mo or other metal, and the thickness is about
  • Step S16 forming a second gate insulating layer 106, and the second gate insulating layer 106 can be formed by using SiNx.
  • the thickness of the second gate insulating layer 106 is about
  • Step S17 A second gate metal layer 107 is formed.
  • the second gate metal layer 107 is used to form the electrode of the capacitor in the driving circuit layer.
  • the first gate metal layer may be formed of metal such as Mo with a thickness of approximately
  • the electrodes of the capacitor may also be formed of other metals instead of the gate metal.
  • Step S18 forming an interlayer dielectric layer (LID) 108.
  • the interlayer dielectric layer 108 may be formed by using SiO2 or SiNx, or a composite film layer of SiNx and SiO2. When the composite film layer is used, the thickness of SiO2 is about The thickness of SiNx is approximately
  • Step S19 forming a source-drain metal layer.
  • the source-drain metal layer includes a first electrode 1091, a second electrode 1092, and a VSS signal line 1093.
  • the first electrode 1091 is used to connect to a first voltage signal line.
  • One of the first electrode 1091 and the second electrode 1092 is a source, and the other is a drain.
  • the source and drain metal layers can be formed by a Ti/Al/Ti composite film layer, wherein the thickness of each film layer in the composite film layer can be
  • Step S20 forming a flat layer (PLN) 110; the flat layer 110 may be formed of resin.
  • Step S22 forming a first liner 1111 and a second substrate 1112, the first liner 1111 and the second substrate 1112 are used to bind inorganic light-emitting diodes, the first liner 1111 is connected to the first electrode 1091; the second liner The pad 1112 is connected to the VSS signal line 1093; the first pad 1111 and the second substrate 1112 can be formed by an ITO/Ag/ITO composite film layer, and the thickness of each film layer in the composite film layer can be
  • Step S23 forming a passivation layer 112; the passivation layer 112 may be formed of SiNx with a thickness of about The passivation layer is used to protect the electrode of the inorganic light emitting diode.
  • Step S24 forming a black matrix 113, and the black matrix 113 may be formed of a resin material.
  • the black matrix is used for anti-reflection.
  • Step S25 Transfer the inorganic light emitting diode 20 to the driving circuit layer.
  • the inorganic light emitting diode 20 includes an anode 21 and a cathode 22.
  • the anode 21 is electrically connected to the first gasket 1111, and the cathode 22 is The second pad 1112 is electrically connected.
  • Some embodiments of the present disclosure also provide a driving method, which is applied to an inorganic light emitting diode display device in which the touch driving electrode and the touch sensing electrode both multiplex the signal line of the inorganic light emitting diode display substrate.
  • the driving method includes:
  • Step S31 Divide the time of one frame of screen into a display period and a touch period.
  • the display period input display signals to the touch driving electrodes and touch sensing electrodes, and in the touch period, to The touch driving electrodes and the touch sensing electrodes input touch signals.
  • FIG. 6 is a schematic diagram of a backplane driving circuit of an inorganic light emitting diode display device according to some embodiments of the disclosure
  • FIG. 7 is a timing diagram of driving signals of an inorganic light emitting diode display device according to some embodiments of the disclosure .
  • the backplane drive circuit of some embodiments of the present disclosure can be divided into two parts, one is a current control circuit, and the other is a duration control circuit.
  • the current control circuit is responsible for the saturation circuit after output compensation, and the duration control circuit is responsible for controlling inorganic luminescence through time integration.
  • the grayscale brightness of the diode can be divided into two parts, one is a current control circuit, and the other is a duration control circuit.
  • the current control circuit is responsible for the saturation circuit after output compensation
  • the duration control circuit is responsible for controlling inorganic luminescence through time integration.
  • the grayscale brightness of the diode can be divided into two parts, one is a current control circuit, and the other is a duration control circuit.
  • the current control circuit includes a capacitor C1, thin film transistors T1, T2, T3, T4, T5, and T6.
  • One end of the capacitor C1 is connected to the node P2, and the other end is connected to the first voltage signal line (VDD in FIG. 6);
  • the gate of T1 is connected to the RST (reset signal) signal line, the first pole is connected to the node P3, the second pole is connected to the Vint signal line;
  • the gate of T2 is connected to the GateA signal line, the first pole is connected to the P5 node,
  • the two poles are connected to the Vdata_1 (gray-scale voltage) signal line;
  • the gate of T3 is connected to the GateA signal line, the first pole is connected to the P3 node, the second pole is connected to the P4 node;
  • the gate of T4 is connected to the P2 node, the first The pole is connected to the P4 node, the second pole is connected to the P5 node;
  • the gate of T5 is connected to the
  • the duration control circuit includes: thin film transistors T7, T8, capacitor C2 and inorganic light-emitting diode L; wherein the gate of T7 is connected to the GateB signal line, the first pole is connected to the P1 node, and the second pole is connected to Vdata_T (time control signal data Voltage) signal line connection; the gate of T8 is connected to the P1 node, the first pole is connected to the inorganic light emitting diode L, and the second pole is connected to T8; one end of the capacitor C2 is connected to the node P1, and the other end is connected to the common voltage signal line, The anode of the inorganic light emitting diode L is connected to T8, and the cathode is connected to the VSS signal line.
  • Vdata_T time control signal data Voltage
  • the touch drive electrodes (TX1, TX2, TX3%) are multiplexed with the first voltage signal lines (VDD1, VDD2, VDD3...)
  • the touch sensing electrodes (RX1, RX2, RX3%) are multiplexed with the Vint signal lines (Vint1, Vint2, Vint3%)
  • a frame of picture (scan1, scan2, scan3%) in Figure 7 can be divided into In the display period and the touch period, during the touch period, the touch driving electrodes are scanned row by row, and touch driving signals are input at different times, and the touch sensing electrodes collect sensing signals in sequence in each column. During the touch time period, the EM and RST signals must be high to ensure that the touch signal will not affect the display effect.
  • Some embodiments of the present disclosure also provide a driving method, which is applied to the above-mentioned inorganic light emitting diode display device in which only the touch driving electrode multiplexes the signal line of the inorganic light emitting diode display substrate, and the driving method includes:
  • Step S41 Divide the time of one frame of screen into a display period and a touch period.
  • a display signal is input to the touch drive electrode, and during the touch period, the touch drive electrode And the touch sensing electrode to input a touch signal.
  • the mutual capacitive touch technology is integrated on the inorganic light emitting diode display substrate to realize the integration of the display function and the touch function of the inorganic light emitting diode display device.
  • the control driving electrode is multiplexed with the signal line in the driving circuit layer, no additional process is required, the process cost is reduced, and the thickness of the inorganic light emitting diode display substrate can be reduced.

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Abstract

一种无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法，无机发光二极管显示基板包括：衬底基板(101)；设置于衬底基板(101)上的驱动电路层，驱动电路层包括驱动薄膜晶体管(T)、第一衬垫(1111)和第二衬垫(1112)，驱动薄膜晶体管(T)的源极或漏极(1091)与第一衬垫(1111)连接；设置于驱动电路层上的无机发光二极管(20)，无机发光二极管(20)包括阳极和(21)阴极(22)，阳极(21)与第一衬垫(1111)电连接，阴极(22)与第二衬垫电(1112)连接；还包括：触控驱动电极(30)，触控驱动电极(30)与驱动电路层中的第一信号线复用。

Description

无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法
相关申请的交叉引用
本申请主张在2019年4月26日在中国提交的中国专利申请号No.201910343450.3的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法。
背景技术
无机发光二极管(例如Micro LED)相对有机发光二极管(OLED)具有更高效率、更低功耗、更高信赖性，有可能成为未来的新型显示产品。相关技术中的无机发光二极管多采用转印技术形成到带有驱动电路的基板上，通过驱动电路驱动无机发光二极管实现发光并显示。
触控功能是目前多数显示装置必备的功能，如何在无机发光二极管显示装置上兼容触控功能是亟待解决的问题。
发明内容
本公开提供一种无机发光二极管显示基板，包括：
衬底基板；
设置于所述衬底基板上的驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的源极或漏极与所述第一衬垫连接；
设置于所述驱动电路层上的无机发光二极管，所述无机发光二极管包括阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；
还包括：
触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复用。
可选的，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述无机发光二极管显示基板还包括：
触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
可选的，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述触控驱动电极和所述触控感应电极位于相邻的所述无机发光二极管之间，所述触控驱动电极和所述触控感应电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
可选的，所述的无机发光二极管显示基板，还包括：绝缘层，其中，所述驱动薄膜晶体管的漏极通过所述绝缘层中的过孔与所述第一衬垫电连接，从而与所述无机发光二极管的阳极电连接。
可选的，所述第一电压信号线用于向所述无机发光二极管提供电源信号，所述参考电位信号线用于向所述无机发光二极管提供参考电位。
本公开还提供一种无机发光二极管显示装置，包括无机发光二极管显示基板和用于封装所述无机发光二极管显示基板的封装盖板，无机发光二极管显示基板，包括：
衬底基板；
设置于所述衬底基板上的驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的源极或漏极与所述第一衬垫连接；
设置于所述驱动电路层上的无机发光二极管，所述无机发光二极管包括阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；
还包括：
触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复 用。
可选的，所述无机发光二极管显示装置还包括：
触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
可选的，所述无机发光二极管显示装置还包括：
触控感应电极，所述触控感应电极设置于所述封装盖板上。
可选的，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述的无机发光二极管显示基板，还包括：绝缘层，其中，所述驱动薄膜晶体管的漏极通过所述绝缘层中的过孔与所述第一衬垫电连接，从而与所述无机发光二极管的阳极电连接。
可选的，所述第一电压信号线用于向所述无机发光二极管提供电源信号，所述参考电位信号线用于向所述无机发光二极管提供参考电位。
本公开还提供一种驱动方法，应用于上述触控驱动电极和触控感应电极均与信号线复用的无机发光二极管显示装置，包括：
将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极和触控感应电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
本公开还提供一种驱动方法，应用于上述仅触控驱动电极与信号线复用的无机发光二极管显示装置，包括：
将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
本公开还一种无机发光二极管显示基板的制作方法，包括：
提供衬底基板；
在所述衬底基板上形成驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的第一极与所述第一衬垫连接；所述第一极为源极或漏极；
将无机发光二极管转印至所述驱动电路层上，所述无机发光二极管包括 阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；以及
形成触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复用。
可选的，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述无机发光二极管显示基板的制作方法还包括：
形成触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
可选的，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述触控驱动电极和所述触控感应电极位于相邻的所述无机发光二极管之间，所述触控驱动电极和所述触控感应电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
附图说明
为了更清楚地说明本公开一些实施例的技术方案，下面将对本公开一些实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本公开一些实施例的无机发光二极管显示基板的结构示意图；
图2为本公开一些实施例的无机发光二极管显示基板的结构示意图；
图3为本公开一些实施例的触控驱动电极和触控感应电极的结构示意图；
图4为本公开一些实施例的无机发光二极管显示装置的结构示意图；
图5为本公开一些实施例的触控驱动电极和触控感应电极的结构示意图；
图6为本公开一些实施例的背板驱动电路的结构示意图；
图7和图8为本公开一些实施例的背板驱动电路的驱动信号的时序图。
具体实施方式
为使本公开一些实施例的目的、技术方案和优点更加清楚，下面将结合本公开一些实施例的附图，对本公开一些实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
请参考图1和图2，本公开一些实施例提供一种无机发光二极管显示基板，包括：
衬底基板101；
设置于所述衬底基板101上的驱动电路层，所述驱动电路层包括驱动薄膜晶体管T、第一衬垫(Pad)1111和第二衬垫1112，所述驱动薄膜晶体管的第一极1091与所述第一衬垫1111连接；所述第一极1091为所述驱动薄膜晶体管的源极或漏极；
设置于所述驱动电路层上的无机发光二极管20，所述无机发光二极管20包括阳极21和阴极22，所述阳极21与所述第一衬垫1111电连接，所述阴极22与所述第二衬垫1112电连接；
触控驱动电极30，所述触控驱动电极30与所述驱动电路层中的第一信号线复用。
本公开一些实施例中，在无机发光二极管显示基板上集成互容式触控技术，实现无机发光二极管显示装置显示功能和触控功能的整合，同时，触控驱动电极与驱动电路层中的信号线复用，无需额外的工艺制程，降低了工艺成本，还可以降低无机发光二极管显示基板的厚度。
本公开一些实施例中，所述衬底基板101可以为玻璃基板等。
在本公开的一些实施例中，所述驱动电路层的结构可以参见附图1所示，所述驱动电路层可以包括：
缓冲层102，所述缓冲层102可以采用SiNx(氮化硅)或SiO2(氧化硅)形成，或者，SiNx和SiO2的复合膜层形成。
有源层103；所述有源层103可以采用a-Si形成，厚度约为
Figure PCTCN2020082057-appb-000001
第一栅绝缘层104，第一栅绝缘层104可以采用SiO2或SiNx形成，或者SiNx和SiO2的复合膜层形成。当采用复合膜层时，SiO2厚度约为
Figure PCTCN2020082057-appb-000002
SiNx的厚度约为
Figure PCTCN2020082057-appb-000003
第一栅金属层，所述第一栅金属层包括栅极105；所述第一栅金属层可以采用Mo等金属形成，厚度约为
Figure PCTCN2020082057-appb-000004
第二栅绝缘层106，第二栅绝缘层106可以采用SiNx形成。第二栅绝缘层106的厚度约为
Figure PCTCN2020082057-appb-000005
第二栅金属层107，所述第二栅金属层107用于形成驱动电路层中的电容的电极，所述第一栅金属层可以采用Mo等金属形成，厚度约为
Figure PCTCN2020082057-appb-000006
当然，在本公开的其他一些实施例中，电容的电极也可以不采用栅金属形成，而是采用其他金属形成。
层间介电层108，所述层间介电层108可以采用SiO2或SiNx形成，或者采用SiNx和SiO2的复合膜层形成。当采用复合膜层时，SiO2的厚度约为
Figure PCTCN2020082057-appb-000007
SiNx的厚度约为
Figure PCTCN2020082057-appb-000008
源漏金属层，所述源漏金属层包括第一电极1091，第二电极1092，和VSS信号线1093，所述第一电极1091用于与第一电压信号线连接，所述第一电极1091和第二电极1092其中之一为源极，另一为漏极。所述源漏金属层可以采用Ti/Al/Ti复合膜层形成，其中，复合膜层中各膜层的厚度可以为
Figure PCTCN2020082057-appb-000009
平坦层110；平坦层110可以采用树脂形成。
第一衬垫1111和第二衬底1112，第一衬垫1111和第二衬底1112用于绑定无机发光二极管，第一衬垫1111与第一极1091连接；第二衬垫1112与VSS信号线1093连接；第一衬垫1111和第二衬底1112可以采用ITO/Ag/ITO复合膜层形成，复合膜层中各膜层的厚度可以为
Figure PCTCN2020082057-appb-000010
钝化层112，钝化层112可以采用SiNx形成，厚度约为
Figure PCTCN2020082057-appb-000011
所述钝化层用于对无机发光二极管的电极进行保护。
黑矩阵113，所述黑矩阵113可以采用树脂材料形成。所述黑矩阵用于防反射。
上述驱动薄膜晶体管T包括：有源层103、栅极105、第一电极1091和第二电极1092，上述驱动包括晶体管T为顶栅型薄膜晶体管，当然，在本公开的其他一些实施例中，也可以为底栅型薄膜晶体管。
图2所示的实施例中，驱动电路层(图2中的虚线矩形框A为驱动电路层中的驱动电路的一部分)具体包括：
第一衬垫1111和第二衬垫1112；
驱动薄膜晶体管T的漏极通过绝缘层110中的过孔1113与第一衬垫1111连接，从而与无机发光二极管20的阳极21连接；
VSS信号线1093通过绝缘层110中的过孔与第二衬垫1112连接；
绝缘层110和钝化层112，均用于隔离各导电膜层。当然，上述图1和图2仅为一些实施例中的无机发光二极管显示基板的结构示意图，本公开一些实施例中的无机发光二极管显示基板的结构并不限于此。
本公开一些实施例中，可选的，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
其中，第一电压信号线为用于向无机发光二极管提供电源信号的信号线，参考电位信号线为向无机发光二极管提供参考电位的信号线。所述第一电压信号线例如可以是VDD信号线，参考电位信号线例如为Vint信号线。
在本公开的其他一些实施例中，所述无机发光二极管显示基板还可以包括：触控感应电极，所述触控感应电极可以与所述驱动电路层中的第二信号线复用，从而进一步降低工艺成本，降低无机发光二极管显示基板的厚度。
本公开一些实施例中，可选的，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
举例来说，第一电压信号线和参考电位信号线垂直交叉绝缘设置，所述触控驱动电极可以与第一电压信号线复用，所述触控感应电极可以与参考电位信号线复用。
请参考图3，图3为本公开一些实施例的触控驱动电极和触控感应电极的结构示意图，从图3中可以看出，触控驱动电极30和触控感应电极40垂直交叉绝缘设置，触控驱动电极30与驱动电路层中的第一信号线复用，触控感应电极与驱动电路层中的第二信号线复用，从图3中可以看出，多条第一信号线相连组成一个触控驱动电极30，多条第二信号线相连组成一个触控感应电极40。触控驱动电极30与信号走线31相连，触控感应电极40与信号走线41相连。
本公开一些实施例中，请参考图2，所述触控驱动电极30和所述触控感应电极位于相邻的所述无机发光二极管20之间，所述触控驱动电极30和所述触控感应电极在所述衬底基板101上的正投影与所述无机发光二极管20在所述衬底基板101上的正投影不重叠，这样，触控驱动电极30和触控感应电极的信号就不会被无机发光二极管屏蔽。
上述实施例中的无机发光二极管可以为micro LED或mini LED等。
本公开一些实施例还提供一种无机发光二极管显示装置，包括上述任一实施例中的无机发光二极管显示基板和用于封装所述无机发光二极管显示基板的封装盖板。
上述各实施例中，触控驱动电极和触控感应电极可以均设置无机发光二极管显示基板内部，当然，在本公开的其他一些实施例中，触控感应电极也可以不设置于无机发光二极管显示基板内部。
请参考图4和图5，本公开一些实施例还提供一种无机发光二极管显示装置，包括：
无机发光二极管显示基板，所述无机发光二极管显示基板包括：
衬底基板101；设置于所述衬底基板101上的驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫1111和第二衬垫1112和触控驱动电极30，所述驱动薄膜晶体管的第一极1091与所述第一衬垫1111连接；所述第二衬垫1112的一端与所述驱动电路层中的VSS信号线1093相连；
设置于所述驱动电路层上的无机发光二极管20，所述无机发光二极管20包括阳极21和阴极22，所述阳极21与所述第一衬垫1111电连接，所述阴极22与所述第二衬垫1112连接；
触控驱动电极30，所述触控驱动电极30与所述驱动电路层中的第一信号线复用；
用于封装所述无机发光二极管显示基板的封装盖板50；
触控感应电极40，设置于所述封装盖板50上。
本公开一些实施例中，触控感应电极40不设置于无机发光二极管显示基板内部，而是设置于封装盖板50上。
可选的，所述第一信号线选自第一电压信号线、参考电位信号线、数据 线和扫描线其中之一。
可选的，所述触控驱动电极位于相邻的所述无机发光二极管之间，所述触控驱动电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
根据本公开一些实施例中的无机发光二极管显示基板，在无机发光二极管显示基板上集成互容式触控技术，实现无机发光二极管显示装置显示功能和触控功能的整合，同时，触控驱动电极与驱动电路层中的信号线复用，无需额外的工艺制程，降低了工艺成本，还可以降低无机发光二极管显示基板的厚度。
本公开一些实施例还提供一种无机发光二极管显示基板的制作方法，包括：
提供衬底基板；
在所述衬底基板上形成驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的第一极与所述第一衬垫连接；所述第一极为源极或漏极；
将无机发光二极管转印至所述驱动电路层上，所述无机发光二极管包括阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；
所述方法还包括：
形成触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复用。
可选的，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述无机发光二极管显示基板的制作方法还包括：
形成触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
可选的，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
可选的，所述触控驱动电极和所述触控感应电极位于相邻的所述无机发 光二极管之间，所述触控驱动电极和所述触控感应电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
以图1所示的无机发光二极管显示基板为例，对本公开一些实施例的无机发光二极管基板的制作方法进行说明。
图1所示的无机发光二极管的基板的制作方法包括：
步骤S11：提供衬底基板101；
步骤S12：在衬底基板101上形成缓冲层102；所述缓冲层102可以采用SiNx或SiO2形成，或者，SiNx和SiO2的复合膜层形成。
步骤S13：形成有源层103；所述有源层103可以采用a-Si形成，厚度约为
Figure PCTCN2020082057-appb-000012
步骤S14：形成第一栅绝缘层104，第一栅绝缘层104可以采用SiO2或SiNx形成，或者SiNx和SiO2的复合膜层形成。当采用复合膜层时，SiO2厚度约为
Figure PCTCN2020082057-appb-000013
SiNx的厚度约为
Figure PCTCN2020082057-appb-000014
步骤S15：形成第一栅金属层，所述第一栅金属层包括栅极105；所述第一栅金属层可以采用Mo等金属形成，厚度约为
Figure PCTCN2020082057-appb-000015
步骤S16：形成第二栅绝缘层106，第二栅绝缘层106可以采用SiNx形成。第二栅绝缘层106的厚度约为
Figure PCTCN2020082057-appb-000016
步骤S17：形成第二栅金属层107，所述第二栅金属层107用于形成驱动电路层中的电容的电极，所述第一栅金属层可以采用Mo等金属形成，厚度约为
Figure PCTCN2020082057-appb-000017
当然，在本公开的其他一些实施例中，电容的电极也可以不采用栅金属形成，而是采用其他金属形成。
步骤S18：形成层间介电层(LID)108，所述层间介电层108可以采用SiO2或SiNx形成，或者采用SiNx和SiO2的复合膜层形成。当采用复合膜层时，SiO2的厚度约为
Figure PCTCN2020082057-appb-000018
SiNx的厚度约为
Figure PCTCN2020082057-appb-000019
步骤S19：形成源漏金属层，所述源漏金属层包括第一电极1091，第二电极1092，和VSS信号线1093，所述第一电极1091用于与第一电压信号线连接，所述第一电极1091和第二电极1092其中之一为源极，另一为漏极。所述源漏金属层可以采用Ti/Al/Ti复合膜层形成，其中，复合膜层中各膜层的厚度可以为
Figure PCTCN2020082057-appb-000020
步骤S20：形成平坦层(PLN)110；平坦层110可以采用树脂形成。
步骤S22：形成第一衬垫1111和第二衬底1112，第一衬垫1111和第二衬底1112用于绑定无机发光二极管，第一衬垫1111与第一极1091连接；第二衬垫1112与VSS信号线1093连接；第一衬垫1111和第二衬底1112可以采用ITO/Ag/ITO复合膜层形成，复合膜层中各膜层的厚度可以为
Figure PCTCN2020082057-appb-000021
步骤S23：形成钝化层112；钝化层112可以采用SiNx形成，厚度约为
Figure PCTCN2020082057-appb-000022
所述钝化层用于对无机发光二极管的电极进行保护。
步骤S24：形成黑矩阵113，所述黑矩阵113可以采用树脂材料形成。所述黑矩阵用于防反射。
步骤S25：将无机发光二极管20转印至驱动电路层上，所述无机发光二极管20包括阳极21和阴极22，所述阳极21与所述第一衬垫1111电连接，所述阴极22与所述第二衬垫1112电连接。
本公开一些实施例还提供一种驱动方法，应用于上述触控驱动电极和触控感应电极均复用无机发光二极管显示基板的信号线的无机发光二极管显示装置，该驱动方法包括：
步骤S31：将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极和触控感应电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
请参考图6和图7，图6为本公开一些实施例的无机发光二极管显示装置的背板驱动电路的示意图，图7为本公开一些实施例的无机发光二极管显示装置的驱动信号的时序图。
本公开一些实施例的背板驱动电路可以分成两部分，一部分为电流控制电路，一部分为时长控制电路，电流控制电路用于负责输出补偿后的饱和电路，时长控制电路负责通过时间积分控制无机发光二极管的灰阶亮度。
电流控制电路包括：电容C1、薄膜晶体管T1、T2、T3、T4、T5和T6，其中，电容C1的一端与节点P2连接，另一端与第一电压信号线(图6中的VDD)连接；T1的栅极与RST(复位信号)信号线连接，第一极与节点P3连接，第二极与Vint信号线连接；T2的栅极与GateA信号线连接，第一极与 P5节点连接，第二极与Vdata_1(灰阶电压)信号线连接；T3的栅极与GateA信号线连接，第一极与P3节点连接，第二极与P4节点连接；T4的栅极与P2节点连接，第一极与P4节点连接，第二极与P5节点连接；T5的栅极与EM(控制开启时长的信号)信号线连接，第一极与P5节点连接，第二极与第一电压信号线连接；T6的栅极与EM信号线连接，第一极与P4节点连接，第二极与时长控制电路的T8连接。
时长控制电路包括：薄膜晶体管T7、T8、电容C2和无机发光二极管L；其中，T7的栅极与GateB信号线连接，第一极与P1节点连接，第二极与Vdata_T(时间控制信号的数据电压)信号线连接；T8的栅极与P1节点连接，第一极与无机发光二极管L连接，第二极与T8连接；电容C2的一端与节点P1连接，另一端与公共电压信号线连接，无机发光二极管L的阳极与T8连接，阴极与VSS信号线连接。
请参考图7和图8，图7和图8所示的实施例中，触控驱动电极(TX1、TX2、TX3……)与第一电压信号线(VDD1、VDD2、VDD3……)复用，触控感应电极(RX1、RX2、RX3……)与Vint信号线(Vint1、Vint2、Vint3……)复用，可以将图7中的一帧画面(scan1、scan2、scan3……)分为显示时段和触控时段，在触控时段，触控驱动电极逐行扫描，在不同时刻输入触控驱动信号，触控感应电极每列依次采集感应信号。在触控时段，EM和RST信号必须高电平，保证触控信号不会影响到显示效果。
本公开一些实施例还提供一种驱动方法，应用于上述仅仅触控驱动电极复用无机发光二极管显示基板的信号线的无机发光二极管显示装置，该驱动方法包括：
步骤S41：将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
根据本公开一些实施例中的无机发光二极管显示基板的制作方法，在无机发光二极管显示基板上集成互容式触控技术，实现无机发光二极管显示装置显示功能和触控功能的整合，同时，触控驱动电极与驱动电路层中的信号线复用，无需额外的工艺制程，降低了工艺成本，还可以降低无机发光二极 管显示基板的厚度。
除非另作定义，本公开中使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也相应地改变。
以上所述是本公开的一些实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (20)

  1. 一种无机发光二极管显示基板，包括：
    衬底基板；
    设置于所述衬底基板上的驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的源极或漏极与所述第一衬垫连接；
    设置于所述驱动电路层上的无机发光二极管，所述无机发光二极管包括阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；以及
    触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复用。
  2. 如权利要求1所述的无机发光二极管显示基板，其中，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
  3. 如权利要求1所述的无机发光二极管显示基板，还包括：
    触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
  4. 如权利要求3所述的无机发光二极管显示基板，其中，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
  5. 如权利要求3所述的无机发光二极管显示基板，其中，所述触控驱动电极和所述触控感应电极位于相邻的所述无机发光二极管之间，所述触控驱动电极和所述触控感应电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
  6. 如权利要求1所述的无机发光二极管显示基板，还包括：绝缘层，其中，所述驱动薄膜晶体管的漏极通过所述绝缘层中的过孔与所述第一衬垫电连接，从而与所述无机发光二极管的阳极电连接。
  7. 如权利要求2所述的无机发光二极管显示基板，其中，第一电压信号线用于向所述无机发光二极管提供电源信号，所述参考电位信号线用于向所述无机发光二极管提供参考电位。
  8. 一种无机发光二极管显示装置，包括如权利要求1所述的无机发光二极管显示基板和用于封装所述无机发光二极管显示基板的封装盖板。
  9. 如权利要求8所述的无机发光二极管显示装置，还包括：
    触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
  10. 如权利要求8所述的无机发光二极管显示装置，还包括：
    触控感应电极，所述触控感应电极设置于所述封装盖板上。
  11. 如权利要求9所述的无机发光二极管显示装置，其中，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一
  12. 如权利要求8所述的无机发光二极管显示装置，还包括：绝缘层，其中，所述驱动薄膜晶体管的漏极通过所述绝缘层中的过孔与所述第一衬垫电连接，从而与所述无机发光二极管的阳极电连接。
  13. 如权利要求11所述的无机发光二极管显示装置，其中，第一电压信号线用于向所述无机发光二极管提供电源信号，所述参考电位信号线用于向所述无机发光二极管提供参考电位。
  14. 一种驱动方法，应用于如权利要求9所述的无机发光二极管显示装置，包括：
    将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极和触控感应电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
  15. 一种驱动方法，应用于如权利要求10所述的无机发光二极管显示装置，包括：
    将一帧画面的时间划分为显示时段和触控时段，在所述显示时段，向所述触控驱动电极输入显示用信号，在所述触控时段，向所述触控驱动电极和所述触控感应电极输入触控用信号。
  16. 一种无机发光二极管显示基板的制作方法，包括：
    提供衬底基板；
    在所述衬底基板上形成驱动电路层，所述驱动电路层包括驱动薄膜晶体管、第一衬垫和第二衬垫，所述驱动薄膜晶体管的第一极与所述第一衬垫连 接；所述第一极为源极或漏极；
    将无机发光二极管转印至所述驱动电路层上，所述无机发光二极管包括阳极和阴极，所述阳极与所述第一衬垫电连接，所述阴极与所述第二衬垫电连接；以及
    形成触控驱动电极，所述触控驱动电极与所述驱动电路层中的第一信号线复用。
  17. 如权16所述的无机发光二极管显示基板的制作方法，其中，所述第一信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
  18. 如权16所述的无机发光二极管显示基板的制作方法，其中，所述无机发光二极管显示基板的制作方法还包括：
    形成触控感应电极，所述触控感应电极与所述驱动电路层中的第二信号线复用。
  19. 如权18所述的无机发光二极管显示基板的制作方法，其中，所述第二信号线选自第一电压信号线、参考电位信号线、数据线和扫描线其中之一。
  20. 如权18所述的无机发光二极管显示基板的制作方法，其中，所述触控驱动电极和所述触控感应电极位于相邻的所述无机发光二极管之间，所述触控驱动电极和所述触控感应电极在所述衬底基板上的正投影与所述无机发光二极管在所述衬底基板上的正投影不重叠。
PCT/CN2020/082057 2019-04-26 2020-03-30 无机发光二极管显示基板、显示装置、驱动方法以及无机发光二极管显示基板的制作方法 WO2020216000A1 (zh)

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