WO2020163644A1 - Substrate location detection and adjustment - Google Patents
Substrate location detection and adjustment Download PDFInfo
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- WO2020163644A1 WO2020163644A1 PCT/US2020/017080 US2020017080W WO2020163644A1 WO 2020163644 A1 WO2020163644 A1 WO 2020163644A1 US 2020017080 W US2020017080 W US 2020017080W WO 2020163644 A1 WO2020163644 A1 WO 2020163644A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J9/00—Program-controlled manipulators
- B25J9/16—Program controls
- B25J9/1694—Program controls characterised by use of sensors other than normal servo-feedback from position, speed or acceleration sensors, perception control, multi-sensor controlled systems, sensor fusion
- B25J9/1697—Vision controlled systems
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
- H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J11/00—Manipulators not otherwise provided for
- B25J11/0095—Manipulators transporting wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
- B25J13/00—Controls for manipulators
- B25J13/08—Controls for manipulators by means of sensing devices, e.g. viewing or touching devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
- H10P72/3302—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/206—Modifying objects while observing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
Definitions
- the present disclosure relates generally to substrate (for example a wafer) location detection and adjustment using camera images on process tools in semiconductor manufacturing.
- substrate for example a wafer
- a system and method for positioning a substrate relative to a datum structure such as an edge ring or chuck are provided.
- One method of centering a wafer to an edge ring or electrostatic chuck (ESC) relies on obtaining blanket etch rate and backside particle data with the wafer placed in a“best-guess” wafer center location.
- the blanket etch rates are obtained with the wafer at this location, and post-etch metrology is then performed on the blanket wafers to determine their deviation from center.
- a backside particle test uses backside particle imprints of a precoat on the ESC to decide wafer offset relati ve to the ESC. This information can be used to adjust a vacuum transfer module (VTM) robot calibration and achieve wafer centering. This process is expensive at least for the reason that blanket wafers are costly, and cumbersome.
- VTM vacuum transfer module
- a system for positioning a wafer relative to a datum structure comprises a camera arrangement including at least two cameras, each of the at least two cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure; a processor to receive positional data from each of the at least two cameras and determine, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view; and a controller to adjust a position of the wafer relative to the datum structure based on the determined respective gap sizes.
- the datum location includes an edge ring. In some examples, the datum location includes a chuck.
- the camera arrangement is pro sided in a wall of a wafer processing chamber.
- the camera arrangement includes a third camera, the third camera providing positional data in relation to a respective third field of view, to the processor.
- the determined respective gap sizes are compared against respective predetermined gap sizes, the respective predetermined gap sizes associated with a centered or desired position of the wafer in relation to the datum structure.
- the controller includes a robotic arm of a vacuum transfer module (VTM).
- VTM vacuum transfer module
- the processor identifies a center of the wafer based on the determined respective gap sizes.
- a system for positioning a wafer relati ve to a datum structure comprises a camera arrangement including one or more cameras, each of the one or more cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure; a processor to receive positional data from the or each camera and determine, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view; and a controller to adjust a position of the wafer relative to the datum structure based on the determined respective gap sizes.
- the one or more cameras includes a single movable camera.
- the single movable camera is mounted on a robotic arm
- the robotic arm is mounted on a vacuum transfer module (VTM).
- VTM vacuum transfer module
- the camera arrangement is provided in a wall of a wafer processing chamber.
- FIG. 1 is a schematic diagram of a reaction chamber within which some examples of the methods of the present disclosure may be employed, according to some examples.
- FIGS. 2-3 depict camera arrangements, according to some examples.
- FIGS. 4-8 depict camera images, according to some examples.
- FIG. 9 depicts a camera arrangement, according to an example embodiment.
- FIG. 10 depicts a scatter plot, according to an example.
- FIG. 11 depicts operations in a method of centering a wafer, according to an example.
- FIG. 12 depicts a single camera arrangement, according to an example.
- a portion of the disclosure of this patent document contains material that is subject to copyright protection.
- the copyright owner has no objection to the facsimile reproduction by anyone of the patent document or the patent disclosure, as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright rights whatsoever.
- the following notice applies to the software and data as described below and in the drawings that form a part of this document: Lam Research Corporation 2018-2020, All Rights Reserved.
- the term“wafer” as used herein as example is intended to include within its ambit a“substrate” more generally.
- a substrate may include a photomask, a flat-panel display, and so forth that may also processed with the systems and methods described herein.
- FIG.1 of the accompanying drawings An example chamber in which some examples of the present disclosure may be employed, with appropriate chamber modifications for film deposition and control testing, is shown in FIG.1 of the accompanying drawings.
- a typical plasma etching (or deposition) apparatus comprises a reactor in which there is a chamber through which reactive gas or gases flow. Within the chamber, the gases are ionized into a plasma, typically by radio frequency energy. The highly reactive ions of the plasma gas are able to react with material, such as a polymer mask on a surface of a semi-conductor wafer being processed into integrated circuits (IC’s). Prior to etching, the wafer is placed in the chamber and held in proper position by a chuck or holder which exposes a top surface of the wafer to the plasma gas.
- IC integrated circuits
- the chuck provides an isothermal surface and serves as a heat sink for the wafer.
- a semiconductor wafer is held in place for etching by mechanical clamping means.
- a chuck a type of chuck, a
- semiconductor wafer is held in place by electrostatic force generated by an electric field between the chuck and wafer.
- the present methods are applicable to both types of chucks.
- FIG. 1 illustrates a capacitively-coupled plasma processing chamber 100, representing an exemplary plasma processing chamber of the types typically employed to etch a substrate.
- a chuck 102 representing the workpiece holder on which a substrate, such as a wafer 104, is positioned during etching.
- the chuck 102 may be implemented by any suitable chucking technique, e.g., electrostatic, mechanical, clamping, vacuum, or the like.
- the chuck 102 is typically supplied with dual RF frequencies (a low frequency and high frequency), for example 2 MHz and 27 MHz, simultaneously, during etching by a dual frequency source 106.
- a vacuum transfer module (not shown) may be used to place and center (or position) the wafer 104 on the chuck 102.
- VTM vacuum transfer module
- Accurate wafer positioning or centering is typically a key aspect when seeking to perform successfully certain processing operations on the wafer 104 within the processing chamber 100. These operations may include deposition, etch, and edge bevel removal (EBR), for example. Other operations are possible.
- a VTM includes one or more robotic controls or arms to manipulate the wafer 104 as it is placed on the chuck 102.
- a VTM robotic arm is guided during wafer placement and centering by feedback or other data generated by an array of cameras and a VTM control module discussed further below.
- One or more components of the processing chamber 100 may be used as a datum point in determining a position or center of the wafer 104.
- a proximity of one or more sites at the peripheral edge of the wafer 104 to a processing chamber component is used in determining a wafer center.
- Two or three peripheral edge sites of the wafer 104 may be used in some examples.
- a datum component includes an edge ring 118.
- FIG. 1 illustrates an etching reactor where the surface of the upper electrode 108 is larger than the surface of the chuck 102 and the wafer 104.
- plasma 110 is formed from etchant source gas supplied via a gas line 112 and pumped out through an exhaust line 114.
- An electrical insulator ring 109 insulates the upper electrode 108 from the processing chamber 100.
- Confinement rings 116 may be placed between the upper electrode 108 and a bottom electrode, such as the chuck 102 in FIG. 1. In general, confinement rings 116 help confine the etching plasma 110 to the region above the wafer 104 to improve process control and to ensure repeatability.
- equipotential field lines are set up over wafer 104.
- the equipotential field lines are the electric field lines across the plasma sheath that is between wafer 104 and the plasma 110. In some examples, the equipotential surfaces and electric field lines are normal to each other. There are equipotential surfaces between the wafer 104 and the plasma 110. The electric field lines accelerate charged particles across these equipotential surfaces.
- the positive ions accelerate across the equipotential field lines to impinge on the surface of wafer 104, thereby providing the desired etch effect, such as improving etch directionality.
- the field lines may not be uniform across the wafer surface and may vary significantly at the edge of the wafer 104. Accordingly, an edge (or focus) ring 118 is typically provided to improve process uniformity across the entire wafer surface.
- the wafer 104 is shown disposed within an edge ring 118, which may be formed of a suitable dielectric material such as ceramic, quartz, plastic, or the like.
- the edge ring 1 18 allows the equipotential field lines to be disposed substantially uniformly over the entire surface of the wafer 104.
- An electrically conductive shield 120 substantially encircles the edge ring 118.
- the electrically conductive shield 120 is configured to be substantially grounded within the processing chamber 100.
- the electrically conductive shield 120 prevents the presence of unwanted equipotential field lines outside of the edge ring 118.
- Examples of the present disclosure do not require blanket wafer images and instead use images captured by cameras mounted above a wafer 104 to measure and guide wafer centering operations.
- Wafer centering operations may be conducted relative to a datum structure or component within the process module, such as the edge ring 118 or the chuck 102, such as an electrostatic chuck (ESC).
- positional data is transmitted as feedback to a wafer transferring module (for example, a VTM) to adjust its calibration until the wafer 104 is appropriately centered on the chuck 102.
- a wafer transferring module for example, a VTM
- An example of the present disclosure performs an in-situ measurement of the wafer 104 during wafer centering operations and provides immediate feedback to a controller user interface (UI) of a control module.
- UI controller user interface
- an array of one or more measurement cameras takes an image that may include one or more sites or portions at the outer peripheral edge of the wafer 104, and at least one inner edge of the edge ring 118.
- Image processing software locates the wafer periphery and inner edge of the edge ring 118 and calculates a separation distance, or gap, between them. In some examples, this measurement is performed at several points around the periphery of the wafer 104. Measurement results are then used to adjust the VTM robotic controls for placing the wafer 104 on the chuck 102 in the processing chamber 100. Checking the progress of the wafer centering operations can be performed quickly by repeating the above procedure.
- an arrangement 200 of one or more cameras (for example, camera 1 and camera 2) associated with a processing chamber 100 can capture images and make image measurements.
- each of the cameras 1 and 2 has a respective field of view 200' and 200" that can detect an inner edge 202 of an edge ring 210 and the peripheral edge 204 of a wafer 206.
- a separation distance or gap 208 between the inner edge 202 of the edge ring 210 and the peripheral edge 204 can be detected and measured by the cameras 1 and 2.
- a convenient example arrangement for performing the gap 208 measurement includes providing a vacuum-seal window within a wall of the processing chamber 100 and locating the cameras 1 and 2 in the window.
- image capture and gap measurement are performed during startup and maintenance phases of the processing chamber 100.
- the cameras 1 and 2 are mounted onto a robotic arm of a vacuum transfer module (VTM) to facilitate centering and gap measurements being taken under control of an operator of the processing chamber 100.
- VTM vacuum transfer module
- lighting is controlled during gap image measurements.
- the arrangement 200 in FIG. 2 includes two cameras, other arrangements are possible.
- a single, moveable camera may be arranged in two different positions to obtain respective fields of view 200' and 200".
- a single movable camera can be moved between positions 1202, 1204, and 1206 to obtain or generate one or more respective fields of view 1200', 1200" and 1200'" at those camera positions.
- Some or all the cameras in the various examples described herein may be fixed or movable.
- Some examples may include or generate a composite field of view, for example a single view taken by a single camera that includes or encompasses a plurality of sub-views.
- Example sub views may include those at positions 1202, 1204, and 1206 in FIG. 12. Other combinations of fields of view and camera arrangements are possible.
- FIG. 3 An alternate camera arrangement 300 is shown in FIG. 3.
- the illustrated arrangement includes three cameras 1, 2, and 3 (labeled 302, 304, and 306 in the view) positioned to look down on and take images of an edge ring 310 and wafer 312 disposed within a processing chamber, such as a processing chamber 100 of FIG. 1.
- Each camera 1, 2, and 3 has a respective field of view 300', 300", and 300'".
- a VTM 308 (not shown to scale) may be located adjacent the monitored processing chamber 100.
- a single VTM 308 has a rectangular footprint that spans an area large enough to service a plurality of adjacent processing chambers 100.
- a single VTM 308 has five processing chamber 100 positioned along each side of it.
- the VTM 308 may include a robotic arm 310 (not shown to scale) for manipulating one or more cameras between respecti ve fields of view 302, 304, and 306.
- a single camera or several cameras may be mounted on the VTM arm 310 so that a field of view or gap measurement can be established or taken at the discretion of an operator, or by a processor under automation.
- illumination of the fields of view is controlled, for example during a taking of a gap measurement or when monitoring a field of view.
- FIG. 3 includes three cameras 1 -3, a single moving camera or several stationary cameras may be used to take such measurements.
- FIG. 4 shows pictorial example images 402 and 404 captured by the cameras 1 and 2 of the various embodiments described herein.
- the image 402 on the left depicts a relatively small gap 406 between an inner edge 202 of an edge ring 210 and a peripheral edge 204 of a wafer 206.
- the camera 1 has thus detected that the wafer placement is relatively close to the edge ring 210.
- the image 404 on the right depicts a larger gap 408 between the inner edge 202 of the edge ring 210 and the peripheral edge 204 of the wafer 206.
- Camera 2 has detected that the wafer placement is further away from the edge ring 210.
- a wafer-to-edge ring gap 208 in FIG. 2 (or 406 and 408 in FIG.
- a bare silicon (Si) wafer 206 (for example) may be employed, but other types of wafer 206 are possible. Other examples may include use of a calibration wafer carrying markings indicating a reference angle and/or wafer radius and, in some examples, may be provided in a differentiating color within the images 402 and 404.
- Information regarding the gaps 406 and 408 may be transmitted dynamically as feedback to the VTM 308 during wafer centering operations. Based on the feedback received, a wafer position may be adjusted incrementally or continuously until preset or predetermined gap values for a wafer-central position are established.
- FIGS 5-8 show respective example images (for example in fields of view 300', 300", and 300'" taken by cameras 1 , 2 and 3 in FIG. 3) of peripheral edges 204 of a wafer 502 corresponding to the location of each camera next to an associated inner edge 202 of an edge ring 210.
- the wafer 502 is positioned on a chuck 102 within a processing chamber 100. Although the peripheral edges of the wafer 502 are represented by linear lines, it will be appreciated that in real-life they will be slightly arcuate.
- a location of a VTM 512 adjacent the processing chamber 100 is shown in FIG. 5. The VTM 512 is positioned similarly in each of the views of FIGS. 6-8.
- initial or datum locations 504, 506, and 508 of a top edge, bottom edge, and right-side edge of the wafer 502 are indicated respectively in FIG. 5.
- a separation distance or top gap 510 may be derived and noted accordingly.
- the images in FIG. 6 are representative of a wafer movement in the direction 602 under control of a robotic arm of the VTM 512 away from the
- VTM 512 location (FIG. 5).
- the top gap 510 has widened accordingl y.
- FIG. 7 The images in FIG. 7 are representative of wafer movement in the 702 towards the VTM 512 back to the initial or datum wafer locations. The size of top gap 510 has been restored accordingly.
- an initial side gap 704 (FIG. 7) may be derived and noted.
- the images in FIG. 8 are representative of wafer movement under control of a robotic arm of the VTM 512 in the direction 802 to the right.
- the side gap 704 has narrowed accordingly.
- Positional data representative of such wafer movement derived from top and side gap images captured by the array of cameras 1 , 2, and 3, are dynamically transmitted back to a control module of the VTM 512 to facilitate the location and centering of a wafer 502 during a wafer placement and centering operation.
- an arrangement 900 of a wafer 206 and edge ring 210 is shown.
- a center of a wafer 206 of known diameter may be determined based on measurements of a top gap 510 and a side gap 704 or based on locations associated with gaps 510 and 704.
- the separation distance or top gap 510 between a location X on a peripheral edge 204 of the wafer 206, and an adjacent location X' on the inner edge 202 of an edge ring 210 may be determined.
- a separation distance or side gap 704 may be determined in a similar mamier for locations Y and Y'.
- the cameras 1 and 2 are not shown at the true locations in the top and left quadrants where images of top gap 510 and side gap 704 would be taken in real-life, but rather at camera locations in the right and bottom quadrants, as illustrated.
- the locations of points X’ and Y' are known or can be derived, for example, based on a known location or dimensions of the edge ring 210 which can serve as a datum component in this regard.
- a center 908 of the edge ring 210 can be established accordingly as a reference for wafer centering and processing purposes.
- the top and side gaps 510 and 704 may be applied respectively to determine the location of points X and Y on the peripheral edge 204 of the wafer 206.
- the radius of the wafer 206 is known and a notional circumference (or an arc portion of a
- the determined center 910 of the wafer 206 may be compared on a dynamic basis against the true center 908 of the edge ring 210 to derive offset or positional data 912.
- feedback based on the offset data is provided to the control module of the VTM 512 to adjust a position or path of a wafer 206 during wafer centering.
- positional adjustments for a wafer 206 may be made by a control module of a VTM 512 based on determinations of the top and side gaps 510 and 704, or locations of the edge ring 210 and wafer centers 908 and 910 or based on a combination of both sets of data or portions thereof.
- FIG. 10 depicts a scatter plot 1000 showing a measured change in a wafer center obtained with camera measurements (solid ring dots 1002) and VTM robot setpoint commands (dashed ring dots 1004).
- Line segments 1006 and 1008 link a measured wafer center 1002 to its associated robot setpoint 1004.
- Relatively shorter line segments 1008, shown in solid outline, are indicative that the respective measured wafer center 1002 is within specification of the VTM robot wafer setpoint 1004. This is reflecti ve of the robot repeatability specification mentioned above.
- Relatively longer line segments 1006 are indicative that the measured wafer center 1002 is within, for example, 133% of the VTM robot spec. Other margins of accuracy may be used.
- the hashed line 1010 indicates for example a single wafer measurement in excess of 133% of the robot setpoint.
- the dotted line 1012 indicates for example that a camera measurement that correctly caught an error in the robot placement. Other indicators are possible.
- a method 1100 for centering a wafer relative to a datum structure comprises, at operation 1102, placing, adjacent a wafer processing chamber, a camera arrangement including at least two cameras, each of the at least two cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure; at 1104, receiving positional data from each of the at least two cameras and determining, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view; and, at 1106, adjusting a position of the wafer relative to the datum structure based on the determined respective gap sizes.
- the datum location includes an edge ring. In some examples, the datum location includes a chuck.
- the method 1100 further comprises providing the camera arrangement in a wall of the wafer processing chamber.
- the method 1100 further comprises including a third camera in the camera arrangement, and providing positional data from the third camera, in relation to a respective third field of view, to the processor.
- the method 1100 further comprises comparing the determined respective gap sizes against respective predetermined gap sizes, the respective predetermined gap sizes associated with a centered or desired position of the wafer in relation to the datum structure or the wafer processing chamber.
- the method 1100 further comprising including, in the controller, a robotic arm of a vacuum transfer module (VTM).
- VTM vacuum transfer module
- embodiments are provided for camera-based image sensing to position a wafer location relative to an edge ring 210 inside a processing chamber 100.
- Examples of the present disclosure may provide unproved speed, cost and accuracy. Some examples may facilitate making quick in situ measurements during wafer positioning or centering operations. Normally blanket wafers are etched in the process module and metrology is performed on the wafers 206 to determine the wafer centering. In a fab, where wafers 206 are typically tracked, premeasured, and moved, conventional measurement operations may take a given period to complete. Present processes, on the other hand, may reduce that time by a factor of eight. On a lab process tool, using methods disclosed herein, performing these operations may take only 12.5% of the conventional time necessary in a fab.
- Camera measurements of the present disclosure can determine a wafer placement in most cases to within specification of a VTM robot control setpoint, in some examples. In all but one example of FIG. 10, the camera measurements determined a wafer placement to within specification of conventional backside particle metrology.
- Embodiments may be configured or adjusted as needed by making changes in both hardware and image processing algorithms.
- inventive subject matter may be referred to herein, individually and/or collectively, by the term“invention” merely for convenience and without intending to voluntarily limit the scope of this application to any single invention or inventive concept if more than one is in fact disclosed.
- inventive subject matter may be referred to herein, individually and/or collectively, by the term“invention” merely for convenience and without intending to voluntarily limit the scope of this application to any single invention or inventive concept if more than one is in fact disclosed.
- inventive subject matter merely for convenience and without intending to voluntarily limit the scope of this application to any single invention or inventive concept if more than one is in fact disclosed.
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- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Robotics (AREA)
- Mechanical Engineering (AREA)
- Human Computer Interaction (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (8)
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| US17/427,522 US12397435B2 (en) | 2019-02-08 | 2020-02-06 | Substrate location detection and adjustment |
| SG11202108483YA SG11202108483YA (en) | 2019-02-08 | 2020-02-06 | Substrate location detection and adjustment |
| CN202080013341.6A CN113412534A (en) | 2019-02-08 | 2020-02-06 | Substrate position detection and adjustment |
| KR1020267006214A KR20260046187A (en) | 2019-02-08 | 2020-02-06 | Substrate location detection and adjustment |
| KR1020217028732A KR102934218B1 (en) | 2019-02-08 | 2020-02-06 | Substrate position detection and adjustment |
| JP2021544734A JP2022520038A (en) | 2019-02-08 | 2020-02-06 | Board position detection and adjustment |
| JP2025008807A JP2025069216A (en) | 2019-02-08 | 2025-01-22 | Substrate location detection and adjustment |
| US19/272,846 US20250345945A1 (en) | 2019-02-08 | 2025-07-17 | Substrate location detection and adjustment |
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| US201962802932P | 2019-02-08 | 2019-02-08 | |
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| US19/272,846 Continuation US20250345945A1 (en) | 2019-02-08 | 2025-07-17 | Substrate location detection and adjustment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115116838A (en) * | 2022-06-29 | 2022-09-27 | 上海华力集成电路制造有限公司 | Method for improving dielectric layer peeling by wet process |
| US20240402093A1 (en) * | 2021-09-03 | 2024-12-05 | Asml Netherlands B.V. | Method and system of sample edge detection and sample positioning for image inspection apparatus |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12397435B2 (en) | 2019-02-08 | 2025-08-26 | Lam Research Corporation | Substrate location detection and adjustment |
| KR102728039B1 (en) * | 2021-12-17 | 2024-11-07 | 세메스 주식회사 | Apparatus for Wafer Placement Teaching and Method for Teaching Wafers |
| CN114812419B (en) * | 2022-05-13 | 2025-12-05 | 上海集迦电子科技有限公司 | A wireless device and method for measuring the gap between a focusing ring and the edge of a wafer. |
| CN115763337B (en) * | 2023-01-10 | 2023-06-02 | 拉普拉斯(无锡)半导体科技有限公司 | Method for placing boat on purification table and purification table |
| US12480761B2 (en) | 2023-11-28 | 2025-11-25 | Applied Materials, Inc. | High temperature auto teach calibration disc |
| WO2025150150A1 (en) * | 2024-01-11 | 2025-07-17 | 株式会社日立ハイテク | Plasma processing device, misalignment amount detection device, and misalignment amount correction method |
| US20250259869A1 (en) * | 2024-02-14 | 2025-08-14 | Applied Materials, Inc. | Automatic blind hand-off to center wafer referring to heater pocket |
| US12602771B2 (en) * | 2024-04-26 | 2026-04-14 | Applied Materials, Inc. | In situ wafer seal chuck defects identification |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080101912A1 (en) * | 2006-10-26 | 2008-05-01 | Martin Todd W | Deposition analysis for robot motion correction |
| US20100133257A1 (en) * | 2008-11-06 | 2010-06-03 | Applied Materials, Inc. | Rapid Thermal Processing Chamber With Micro-Positioning System |
| KR20150005554A (en) * | 2012-04-25 | 2015-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Wafer edge measurement and control |
| US20160126128A1 (en) * | 2014-11-04 | 2016-05-05 | Brooks Automation, Inc. | Wafer aligner |
| WO2017014818A1 (en) * | 2015-07-22 | 2017-01-26 | Applied Materials, Inc. | Apparatus and method for optical calibration of wafer placement by a robot |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4819167A (en) * | 1987-04-20 | 1989-04-04 | Applied Materials, Inc. | System and method for detecting the center of an integrated circuit wafer |
| JPH0529441A (en) * | 1991-07-23 | 1993-02-05 | Oki Electric Ind Co Ltd | Detection of wafer position and orientation flat direction |
| JP4353454B2 (en) * | 2002-06-21 | 2009-10-28 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
| US6760976B1 (en) * | 2003-01-15 | 2004-07-13 | Novellus Systems, Inc. | Method for active wafer centering using a single sensor |
| JP5132904B2 (en) * | 2006-09-05 | 2013-01-30 | 東京エレクトロン株式会社 | Substrate positioning method, substrate position detection method, substrate recovery method, and substrate position deviation correction apparatus |
| DE102007024525B4 (en) * | 2007-03-19 | 2009-05-28 | Vistec Semiconductor Systems Gmbh | Apparatus and method for evaluating defects at the edge area of a wafer |
| JP5614326B2 (en) * | 2010-08-20 | 2014-10-29 | 東京エレクトロン株式会社 | Substrate transport apparatus, substrate transport method, and recording medium on which program for executing the substrate transport method is recorded |
| JP5954969B2 (en) * | 2011-11-29 | 2016-07-20 | 富士機械製造株式会社 | Component supply apparatus and component position recognition method |
| WO2014069291A1 (en) * | 2012-10-29 | 2014-05-08 | ローツェ株式会社 | Device and method for detecting position of semiconductor substrate |
| US9881820B2 (en) | 2015-10-22 | 2018-01-30 | Lam Research Corporation | Front opening ring pod |
| JP6923346B2 (en) * | 2017-04-20 | 2021-08-18 | 株式会社Screenホールディングス | Teaching method of a board transfer device, a board processing device equipped with the board transfer device, and a board transfer device. |
| US11468590B2 (en) * | 2018-04-24 | 2022-10-11 | Cyberoptics Corporation | Wireless substrate-like teaching sensor for semiconductor processing |
| US12397435B2 (en) | 2019-02-08 | 2025-08-26 | Lam Research Corporation | Substrate location detection and adjustment |
| KR20210039523A (en) * | 2019-10-01 | 2021-04-12 | 삼성전자주식회사 | Apparatus for transferring wafer and method for transferring wafer using the same |
-
2020
- 2020-02-06 US US17/427,522 patent/US12397435B2/en active Active
- 2020-02-06 WO PCT/US2020/017080 patent/WO2020163644A1/en not_active Ceased
- 2020-02-06 SG SG11202108483YA patent/SG11202108483YA/en unknown
- 2020-02-06 KR KR1020267006214A patent/KR20260046187A/en active Pending
- 2020-02-06 JP JP2021544734A patent/JP2022520038A/en active Pending
- 2020-02-06 CN CN202080013341.6A patent/CN113412534A/en active Pending
- 2020-02-06 KR KR1020217028732A patent/KR102934218B1/en active Active
-
2025
- 2025-01-22 JP JP2025008807A patent/JP2025069216A/en active Pending
- 2025-07-17 US US19/272,846 patent/US20250345945A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080101912A1 (en) * | 2006-10-26 | 2008-05-01 | Martin Todd W | Deposition analysis for robot motion correction |
| US20100133257A1 (en) * | 2008-11-06 | 2010-06-03 | Applied Materials, Inc. | Rapid Thermal Processing Chamber With Micro-Positioning System |
| KR20150005554A (en) * | 2012-04-25 | 2015-01-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Wafer edge measurement and control |
| US20160126128A1 (en) * | 2014-11-04 | 2016-05-05 | Brooks Automation, Inc. | Wafer aligner |
| WO2017014818A1 (en) * | 2015-07-22 | 2017-01-26 | Applied Materials, Inc. | Apparatus and method for optical calibration of wafer placement by a robot |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240402093A1 (en) * | 2021-09-03 | 2024-12-05 | Asml Netherlands B.V. | Method and system of sample edge detection and sample positioning for image inspection apparatus |
| US12560556B2 (en) * | 2021-09-03 | 2026-02-24 | Asml Netherlands B.V. | Method and system of sample edge detection and sample positioning for image inspection apparatus |
| CN115116838A (en) * | 2022-06-29 | 2022-09-27 | 上海华力集成电路制造有限公司 | Method for improving dielectric layer peeling by wet process |
Also Published As
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|---|---|
| KR20210114555A (en) | 2021-09-23 |
| US20250345945A1 (en) | 2025-11-13 |
| CN113412534A (en) | 2021-09-17 |
| SG11202108483YA (en) | 2021-09-29 |
| JP2025069216A (en) | 2025-04-30 |
| KR20260046187A (en) | 2026-04-06 |
| KR102934218B1 (en) | 2026-03-04 |
| JP2022520038A (en) | 2022-03-28 |
| US12397435B2 (en) | 2025-08-26 |
| US20220126454A1 (en) | 2022-04-28 |
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