WO2020140571A1 - 一种mems麦克风 - Google Patents

一种mems麦克风 Download PDF

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Publication number
WO2020140571A1
WO2020140571A1 PCT/CN2019/113317 CN2019113317W WO2020140571A1 WO 2020140571 A1 WO2020140571 A1 WO 2020140571A1 CN 2019113317 W CN2019113317 W CN 2019113317W WO 2020140571 A1 WO2020140571 A1 WO 2020140571A1
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WIPO (PCT)
Prior art keywords
diaphragm
mems microphone
back plate
acoustic
microphone according
Prior art date
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Ceased
Application number
PCT/CN2019/113317
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English (en)
French (fr)
Inventor
孟珍奎
刘政谚
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Technologies Pte Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Technologies Pte Ltd
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Publication of WO2020140571A1 publication Critical patent/WO2020140571A1/zh
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/021—Casings; Cabinets ; Supports therefor; Mountings therein incorporating only one transducer
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H04R1/2807—Enclosures comprising vibrating or resonating arrangements
    • H04R1/2815—Enclosures comprising vibrating or resonating arrangements of the bass reflex type
    • H04R1/2823—Vents, i.e. ports, e.g. shape thereof or tuning thereof with damping material
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/01—Electrostatic transducers characterised by the use of electrets
    • H04R19/016—Electrostatic transducers characterised by the use of electrets for microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H04R7/08—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers separated by air or other fluid
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones
    • H04R2410/03—Reduction of intrinsic noise in microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2499/00—Aspects covered by H04R or H04S not otherwise provided for in their subgroups
    • H04R2499/10—General applications
    • H04R2499/11—Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/16—Mounting or tensioning of diaphragms or cones

Definitions

  • the utility model relates to microphone technology, in particular, to a micro-electromechanical system (Micro-Electro-Mec hanic System, MEMS) microphone.
  • MEMS Micro-Electro-Mec hanic System
  • MEMS microphones are widely used in current mobile phones; common MEMS microphones are capacitive, including vibration
  • the membrane and the backplane constitute a MEMS acoustic sensing capacitor, and the MEMS acoustic sensing capacitor is further connected to the processing chip through a connection plate to output the acoustic sensing signal to the processing chip for signal processing.
  • the technology of the double-diaphragm MEMS microphone has been proposed by the technology, that is, a two-layer diaphragm and a back plate are used to form a capacitor structure.
  • the pressure in the space between the MEMS back plate and the diaphragm is generally lower than the external pressure or vacuum, and the ambient pressure causes the diaphragm to deflect, which reduces the reliability and sensitivity of the MEMS device.
  • the present invention provides a dual diaphragm having an internal cavity and the external pressure equal
  • a MEMS microphone includes a substrate having a back cavity and a capacitive system provided on the substrate, the capacitive system includes a back plate and opposite to the back plate and disposed on both sides of the back plate A first diaphragm and a second diaphragm, the MEMS microphone includes isolation of the substrate, the backplate, and the first diaphragm An insulating layer of the second diaphragm; a sealed space is formed between the first diaphragm and the second diaphragm, and the pressure in the sealed space is equal to the external pressure.
  • the backplane includes an intermediate body region, a first edge region located on one side of the intermediate body region, and a second edge region located on the other side of the intermediate body, and a plurality of acoustic through holes are arranged at intervals In the middle body region, a plurality of support members penetrate the acoustic through hole to connect the first diaphragm and the second diaphragm.
  • the MEMS microphone further includes a through-hole that sets the geometric center of the diaphragm and penetrates the support.
  • the MEMS microphone includes a first release barrier structure located in the first edge region and penetrating the backplane, the first release barrier structure separating the acoustic via and the insulating layer;
  • the MEMS microphone includes a plurality of second release barrier structures located on the second edge region and spaced apart on the backplane, the plurality of second release barrier structures isolate the acoustic via and the insulating layer .
  • the release hole is filled with a dielectric material.
  • the release hole is separated from the acoustic hole by at least two second release blocking structures.
  • it further includes lead-out electrodes corresponding to the first diaphragm, the second diaphragm, and the back plate.
  • it further includes a passivation protective layer to isolate the lead electrodes of the first diaphragm, the second diaphragm, and the back plate.
  • a plurality of protrusions are provided on the upper and lower surfaces of the back plate, and the protrusions are used to prevent adhesion of the first diaphragm and the second diaphragm to the back plate.
  • the utility model proposes a MEMS microphone with a dual diaphragm structure, the internal cavity of the dual diaphragm structure MEMS microphone is consistent with the external environment pressure, which effectively improves the reliability and sensitivity of the device.
  • FIG. 1 is a schematic structural view of a MEMS microphone according to one embodiment of the present invention.
  • the present invention refers to the positional relationship of the existing illustrated structures in the up, down, left and right directions.
  • the MEMS microphone structure 100 proposed by the present invention includes a substrate 101 and a capacitor system 103 disposed on the substrate 101 and insulated from the substrate 101.
  • the material of the substrate 101 is preferably a semiconductor material, such as silicon, which has a back cavity 102, a first surface 101A and a second surface 101B opposite to the first surface, an insulating layer is provided on the first surface 101 A of the substrate 101 107.
  • the back cavity 102 passes through the insulating layer 107 and the first and second surfaces of the substrate 101.
  • the back cavity 102 can be formed by bulk silicon process or dry etching.
  • the capacitance system 103 includes a backplate 105 and a first diaphragm 104 and a second diaphragm 106 that are opposite to the backplate 105 and disposed on the upper and lower sides of the backplate 105, respectively, the first diaphragm 104 and the backplate 105 Between the second diaphragm 106 and the back plate 105, between the first diaphragm 104 and the substrate 101 are provided with an insulating layer 107.
  • the central body region 105A of the backboard 105 includes spaced-apart acoustic through holes 108.
  • the central body region of the backboard 105 is, for example, the region corresponding to the back cavity 102, and outside this region is the backboard 105.
  • the edge regions located on the left and right sides are the first edge region 105B and the second edge region 105C, respectively.
  • the support member 109 passes through the acoustic through hole 108 to connect the first diaphragm 104 and the second diaphragm 106 fixedly. Specifically, the support 109 abuts the top surface of the first diaphragm 104 and the bottom surface of the second diaphragm 106, respectively.
  • the acoustic through hole 108 communicates the area between the first diaphragm 104 and the second diaphragm 106 to form an inner cavity 110.
  • the MEMS microphone When the MEMS microphone is powered on, the first diaphragm 104 and the back plate 105, the second diaphragm 106 and the back plate 105 will be charged with opposite polarities, thereby forming a capacitance, when the first diaphragm 104 and the second diaphragm 106 under the action of the acoustic wave generated in the vibration distance between the back plate 105 and the first diaphragm 104 and second diaphragm 106 will change, thereby causing the capacitance of the capacitance of the system changes, and thus the acoustic signal into an electric signal for To realize the corresponding function of the microphone.
  • first diaphragm 104 and the second diaphragm 106 are square, round or oval, to One less support 109 is provided between the bottom surface of the first diaphragm 104 and the top surface of the second diaphragm 106.
  • the support member 109 is provided to fix the first diaphragm 104 and the second diaphragm 106 through the acoustic through-hole 108 of the back plate 105; that is, the support member 109 does not contact the back plate 105 and is not affected by the back plate 105 Impact.
  • the support 109 may be formed on the top surface of the first diaphragm 104 by various preparation techniques, such as physical vapor deposition, electrochemical deposition, chemical vapor deposition, and molecular beam epitaxy.
  • the support 109 may be composed of a semiconductor material such as silicon or may include a semiconductor material such as silicon.
  • a semiconductor material such as silicon or may include a semiconductor material such as silicon.
  • It may also be composed of at least one of the following or may include at least one of the following: metal, dielectric material, piezoelectric material, piezoresistive material, and ferroelectric material. It can also be made of dielectric materials such as silicon nitride.
  • the support 109 may be integrally formed with the first diaphragm 104 and the second diaphragm 106, respectively.
  • the second diaphragm 106 of the present invention includes a release hole 111, and a dielectric material 112 is used to close the release hole 111.
  • the first edge region 105B of the present invention includes a first release barrier structure 113 penetrating the back plate to isolate the acoustic via 108 from the insulating layer 107;
  • the second edge region 105C includes A plurality of second release barrier structures 114 disposed on the back plate 105 at intervals, the second release barrier structures are separated from the acoustic via 108 and the insulating layer 107.
  • the release hole 111 communicates with the inner cavity 110, so the sacrificial oxide layer in the inner cavity 110 can be removed by a release solution, such as BOE solution or HF gas phase etching technology. Due to the existence of the release barrier structures 113, 114, the first The insulating layer 107 between the diaphragm and the second diaphragm is retained.
  • a release solution such as BOE solution or HF gas phase etching technology
  • the first electrode 104, the second diaphragm 106, and the lead-out electrodes of the back plate 105 are also included, respectively, the first electrode 115, the second electrode 116, and the third electrode 117, respectively.
  • the surface passivation protection layer 118 is also included, and the surface passivation layer simultaneously has the function of insulating the first electrode 115, the second electrode 116, and the third electrode 117 from each other.
  • the The through hole 119 is provided at the center of the first diaphragm 104 and the second diaphragm 106, for example, and connects the back cavity 102 with the external environment, so that the external pressures of the first diaphragm 104 and the second diaphragm 106 are consistent. It also includes protrusions 120 provided on the upper and lower surfaces of the back plate 105. The protrusions 120 help prevent the back plate 105 from adhering to the first diaphragm 104 and the second diaphragm 106.
  • the structure of the present invention is manufactured using a conventional semiconductor process, wherein the insulating layer 107 is, for example, silicon dioxide, the material of the first diaphragm and the second diaphragm is polysilicon, and the back plate is nitrogen on both the upper and lower surfaces A composite laminated structure composed of polysilicon of siliconized silicon.
  • the insulating layer 107 is, for example, silicon dioxide
  • the material of the first diaphragm and the second diaphragm is polysilicon
  • the back plate is nitrogen on both the upper and lower surfaces
  • the internal pressure of the dual-diaphragm cavity is consistent with the outside pressure, avoiding the influence of environmental pressure on the performance of the device, and improving the reliability and sensitivity of the device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

本实用新型提出一种MEMS麦克风，包括具有背腔的基底以及设于所述基底上的电容系统，所述电容系统包括背板以及与所述背板相对且设置在所述背板上下两侧的第一振膜和第二振膜，所述MEMS麦克风包括隔离所述基底、所述背板、所述第一振膜、所述第二振膜的绝缘层；所述第一振膜与所述第二振膜之间形成密封空间，且所述密封空间内的压强等于外界压强，有效避免了环境压力对振膜的影响，提高了器件的可靠性和灵敏度。

Description

说明书 发明名称:一种 MEMS麦克风
技术领域
[0001] 本实用新型涉及麦克风技术， 特别地， 涉及一种微机电系统 (Micro-Electro-Mec hanic System, MEMS)麦克风。
背景技术
[0002] 随着无线通讯的发展， 用户对移动电话的通话质量要求越来越高， 麦克风作为 移动电话的语音拾取装置， 其设计的好坏直接影响移动电话的通话质量。
[0003] 由于 MEMS技术具有小型化、 易集成、 高性能、 低成本等特点， 使其获得业界 青睐， MEMS麦克风在当前的移动电话中应用较为广泛； 常见的 MEMS麦克风为 电容式， 即包括振膜和背板， 二者构成 MEMS声传感电容， 且 MEMS声传感电容 进一步通过连接盘连接到处理芯片以将声传感信号输出给处理芯片进行信号处 理。 为了进一步提高 MEMS麦克风的性能， 5见有技术提出了双振膜 MEMS麦克风 结构， 即利用两层振膜分别与背板构成电容结构。
[0004] 但是通常 MEMS背板与振膜之间的空间内的压强小于外界压强或者为真空， 环 境压力使得振膜发生偏转， 降低了 MEMS器件的可靠性与灵敏度。
[0005] 因此有必要提供一种具有新的 MEMS麦克风， 使得内外压强相等。
发明概述
技术问题
问题的解决方案
技术解决方案
[0006] 为解决上述技术问题， 本实用新型提供一种具有内腔和外界压强相等的双振膜
MEMS麦克风。
[0007] 具体地， 本实用新型提出的方案如下：
[0008] 一种 MEMS麦克风， 包括具有背腔的基底以及设于所述基底上的电容系统， 所 述电容系统包括背板以及与所述背板相对且设置在所述背板上下两侧的第一振 膜和第二振膜， 所述 MEMS麦克风包括隔离所述基底、 所述背板、 所述第一振膜 、 所述第二振膜的绝缘层； 所述第一振膜与所述第二振膜之间形成密封空间， 且所述密封空间内的压强等于外界压强。
[0009] 进一步地， 所述背板包括中间主体区域、 位于所述中间主体区域一侧的第一边 缘区域和位于所述中间主体另一侧的第二边缘区域， 多个声学通孔间隔设置在 所述中间主体区域， 多个支撑件贯穿所述声学通孔连接第一振膜和第二振膜。
[0010] 进一步地， 所述 MEMS麦克风还包括设置所述振膜的几何中心且贯穿所述支撑 件的贯通孔。
[0011] 进一步地， 所述 MEMS麦克风包括位于所述第一边缘区域且贯穿所述背板的第 一释放阻挡结构， 所述第一释放阻挡结构隔离所述声学通孔与所述绝缘层； 所 述 MEMS麦克风包括位于所述第二边缘区域且间隔设置在所述背板上的多个第二 释放阻挡结构， 所述多个第二释放阻挡结构隔离所述声学通孔与所述绝缘层。
[0012] 进一步地， 包括贯穿所述第二振膜并设置在所述第二边缘区域的释放孔， 所述 释放孔内填充有电介质材料。
[0013] 进一步地， 所述释放孔与所述声学孔至少间隔 2个第二释放阻挡结构。
[0014] 进一步地， 还包括对应于所述第一振膜、 第二振膜、 背板的引出电极。
[0015] 进一步地， 还包括钝化保护层， 隔离所述第一振膜、 第二振膜、 背板的引出电 极。
[0016] 进一步地， 所述背板的上、 下表面设有若干凸起， 所述凸起用于防止所述第一 振膜、 所述第二振膜与所述背板发生粘附。
发明的有益效果
有益效果
[0017] 本实用新型提出了一种具有双振膜结构的 MEMS麦克风， 双振膜结构 MEMS麦 克风的内腔和外界环境压强一致， 有效提高了器件的可靠性和灵敏度。
对附图的简要说明
附图说明
[0018] 图 1为本实用新型其中一实施例的 MEMS麦克风结构示意图；
[0019] 图 2为本实用新型另一实施例的 MEMS麦克风结构示意图。 发明实施例
具体实施方式
[0020] 下面将结合本实用新型实施例中的附图， 对本实用新型实施例中的技术方案进 行清楚、 完整地描述， 显然， 所描述的实施例仅是本实用新型的一部分实施例 ， 而不是全部的实施例。 基于本实用新型中的实施例， 本领域普通技术人员在 没有做出创造性劳动前提下所获得的所有其它实施例， 都属于本实用新型保护 的范围。
[0021] 本实用新型上、 下， 左、 右方向指的现有图示结构的位置关系。
[0022] 请参阅图 1-2， 本实用新型所提出的 MEMS麦克风结构 100包括基底 101以及设 置在基底 101上并与基底 101绝缘相连的电容系统 103。
[0023] 基底 101的材质优选为半导体材料， 例如硅， 其具有背腔 102、 第一表面 101A以 及与第一表面相对的第二表面 101B， 基底 101的第一表面 101 A上设有绝缘层 107 ， 背腔 102贯通绝缘层 107、 及基底 101的第一、 第二表面。 其中背腔 102可以通 过体硅工艺或干法腐蚀形成。
[0024] 电容系统 103包括背板 105以及与背板 105相对且分别设置在背板 105上、 下两侧 的第一振膜 104和第二振膜 106， 第一振膜 104和背板 105之间、 第二振膜 106和背 板 105之间、 第一振膜 104和基底 101之间均设有绝缘层 107。 背板 105的中央主体 区域 105A包括间隔设置的声学通孔 108 , 在本实用新型中， 背板 105的中央主体 区域例如为对应背腔 102所在的区域， 此区域之外的为背板 105的边缘区域， 位 于左右两侧的分别为第一边缘区域 105B、 第二边缘区域 105C。 支撑件 109穿过该 声学通孔 108将第一振膜 104和第二振膜 106固定连接。 具体地， 支撑件 109分别 抵接第一振膜 104的顶表面和第二振膜 106的底表面。 声学通孔 108将第一振膜 10 4和第二振膜 106之间的区域连通， 形成内腔 110。 在 MEMS麦克风通电工作时， 第一振膜 104与背板 105、 第二振膜 106与背板 105会带上极性相反的电荷， 从而 形成电容， 当第一振膜 104和第二振膜 106在声波的作用下产生振动， 背板 105与 第一振膜 104和第二振膜 106之间的距离会发生变化， 从而导致电容系统的电容 发生改变， 进而将声波信号转化为了电信号， 实现麦克风的相应功能。
[0025] 在本实施例中， 第一振膜 104和第二振膜 106是方形的、 圆形的或者椭圆形， 至 少一个支撑件 109被设置在第一振膜 104的底表面与第二振膜 106的顶表面之间。
[0026] 该支撑件 109设置为穿过背板 105的声学通孔 108将第一振膜 104和第二振膜 106 固定连接； 即支撑件 109不与背板 105接触， 不受背板 105的影响。
[0027] 该支撑件 109可以通过各种制备技术被形成在第一振膜 104的顶表面之上， 例如 物理蒸汽沉积、 电化学沉积、 化学蒸汽沉积和分子束外延。
[0028] 该支撑件 109可以由诸如硅之类的半导体材料组成或者可以包括例如硅之类的 半导体材料。 比如锗、 硅锗、 碳化硅、 氮化镓、 铟、 氮化铟镓、 砷化铟镓、 氧 化铟镓锌、 或其他元素和 /或化合物半导体（:例如， 例如砷化镓或磷化铟之类的 III- V化合物半导体、 或 II- VI化合物半导体、 或三元化合物半导体、 或四元化合物半 导体）。 也可以由如下各项中的至少一种组成或者可以包括如下各项中的至少一 种： 金属、 电介质材料、 压电材料、 压阻材料和铁电材料。 也可以是由介质材 料如氮化硅制成。
[0029] 根据各个实施例， 该支撑件 109可以分别与第一振膜 104和第二振膜 106—体成 型。
[0030] 根据各个实施例， 本实用新型的第二振膜 106包括释放孔 111， 并采用电介质材 料材料 112封闭该释放孔 111。
[0031] 根据各个实施例， 在本实用新型的第一边缘区域 105B包括贯穿所述背板的第一 释放阻挡结构 113隔离所述声学通孔 108与绝缘层 107 ; 在第二边缘区域 105C包括 间隔设置在背板 105上的多个第二释放阻挡结构 114, 第二释放阻挡结构离声学 通孔 108与绝缘层 107。
[0032] 释放孔 111与内腔 110连通， 因此可以通过释放液， 比如 BOE溶液或者 HF气相 刻蚀技术， 去除内腔 110内的牺牲氧化层， 由于释放阻挡结构 113、 114的存在， 第一振膜和第二振膜之间的绝缘层 107得以保留。
[0033] 根据各个实施例， 还包括第一振膜 104、 第二振膜 106、 背板 105的引出电极， 相应地， 分别为第一电极 115、 第二电极 116、 第三电极 117。
[0034] 根据各个实施例， 还包括表面钝化保护层 118， 该表面钝化层同时具有使第一 电极 115、 第二电极 116、 第三电极 117相互绝缘的作用。
[0035] 参见图 2， 还包括贯通第一振膜 104、 支撑件 109、 第二振膜 106的通孔 119， 该 通孔 119例如设置在第一振膜 104、 第二振膜 106的中心位置， 连通背腔 102与外 界环境， 使得第一振膜 104、 第二振膜 106的外表压力一致。 还包括设置在背板 1 05上下表面的凸起 120, 凸起 120有利于防止背板 105与第一振膜 104、 第二振膜 1 06发生粘附。
[0036] 本实用新型的结构采用常规的半导体工艺制作完成， 其中绝缘层 107例如为二 氧化硅， 第一振膜、 第二振膜的材质为多晶硅材质， 背板则为上下表面都是氮 化硅的多晶硅所组成的复合层叠结构。
[0037] 在本实用新型提供的 MEMS麦克风结构， 其双振膜内腔和外界的压强一致， 避 免了环境压力对器件性能的影响， 提高了器件的可靠性和灵敏度。
[0038] 以上所述仅为本实用新型的实施例， 并非因此限制本实用新型的专利范围， 凡 是利用本实用新型说明书及附图内容所作的等效结构或等效流程变换， 或直接 或间接运用在其它相关的技术领域， 均同理包括在本实用新型的专利保护范围 内。

Claims

权利要求书
[权利要求 1] 一种 MEMS麦克风， 包括具有背腔的基底以及设于所述基底上的电容 系统， 所述电容系统包括背板以及与所述背板相对且设置在所述背板 上下两侧的第一振膜和第二振膜， 所述 MEMS麦克风包括隔离所述基 底、 所述背板、 所述第一振膜、 所述第二振膜的绝缘层； 其特征在于 ， 所述第一振膜与所述第二振膜之间形成密封空间， 且所述密封空间 内的压强等于外界压强。
[权利要求 2] 根据权利要求 1所述的 MEMS麦克风， 其特征在于， 所述背板包括中 间主体区域、 位于所述中间主体区域一侧的第一边缘区域和位于所述 中间主体另一侧的第二边缘区域， 多个声学通孔间隔设置在所述中间 主体区域， 多个支撑件贯穿所述声学通孔连接第一振膜和第二振膜。
[权利要求 3] 根据权利要求 2所述的 MEMS麦克风， 其特征在于， 所述 MEMS麦克 风还包括设置所述振膜的几何中心且贯穿所述支撑件的贯通孔。
[权利要求 4] 根据权利要求 2所述的 MEMS麦克风， 其特征在于， 所述 MEMS麦克 风包括位于所述第一边缘区域且贯穿所述背板的第一释放阻挡结构， 所述第一释放阻挡结构隔离所述声学通孔与所述绝缘层； 所述 MEMS 麦克风包括位于所述第二边缘区域且间隔设置在所述背板上的多个第 二释放阻挡结构， 所述多个第二释放阻挡结构隔离所述声学通孔与所 述绝缘层。
[权利要求 5] 根据权利要求 2所述的 MEMS麦克风， 其特征在于， 包括贯穿所述第 二振膜并设置在所述第二边缘区域的释放孔， 所述释放孔内填充有电 介质材料。
[权利要求 6] 根据权利要求 5所述的 MEMS麦克风， 其特征在于， 所述释放孔与所 述声学孔至少间隔 2个第二释放阻挡结构。
[权利要求 7] 根据权利要求 1所述的 MEMS麦克风， 其特征在于， 还包括对应于所 述第一振膜、 第二振膜、 背板的引出电极。
[权利要求 8] 根据权利要求 7所述的 MEMS麦克风， 其特征在于， 还包括钝化保护 层， 隔离所述第一振膜、 第二振膜、 背板的引出电极。 [权利要求 9] 根据权利要求 1所述的 MEMS麦克风， 其特征在于， 所述背板的上、 下表面设有若干凸起， 所述凸起用于防止所述第一振膜、 所述第二振 膜与所述背板发生粘附。
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