WO2020132043A1 - High power laser converter based on patterned srb4bo7 or pbb407 crystal - Google Patents
High power laser converter based on patterned srb4bo7 or pbb407 crystal Download PDFInfo
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- WO2020132043A1 WO2020132043A1 PCT/US2019/067135 US2019067135W WO2020132043A1 WO 2020132043 A1 WO2020132043 A1 WO 2020132043A1 US 2019067135 W US2019067135 W US 2019067135W WO 2020132043 A1 WO2020132043 A1 WO 2020132043A1
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- laser
- sbo
- laser system
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- harmonic
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- 239000013078 crystal Substances 0.000 title claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000000835 fiber Substances 0.000 claims description 6
- 230000003993 interaction Effects 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001642 boronic acid derivatives Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GDTSJMKGXGJFGQ-UHFFFAOYSA-N 3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound O1B([O-])OB2OB([O-])OB1O2 GDTSJMKGXGJFGQ-UHFFFAOYSA-N 0.000 description 1
- 108050005509 3D domains Proteins 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- QZRNTVPRGQDWRA-UHFFFAOYSA-N strontium;boron;oxygen(2-) Chemical compound [B].[O-2].[Sr+2] QZRNTVPRGQDWRA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/354—Third or higher harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/37—Non-linear optics for second-harmonic generation
- G02F1/377—Non-linear optics for second-harmonic generation in an optical waveguide structure
- G02F1/3775—Non-linear optics for second-harmonic generation in an optical waveguide structure with a periodic structure, e.g. domain inversion, for quasi-phase-matching [QPM]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0092—Nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
Definitions
- the disclosure relates to a high power solid state laser provided with at least one nonlinear converter based on patterned Strontium Tetraborate SrB4B07 (SBO) and Lead
- UV ultraviolet
- DUV deep UV
- the copending US patent application No. discloses a method for fabricating a patterned non-ferromagnetic nonlinear SBO or PBO fully incorporated herein by reference.
- This subgroup of borates has some remarkable properties.
- the SBO should be very transparent in VIS near infrared (IR). Its absorption should be in a single ppm/cm range. It is mechanically stable and non- hydroscopic. It is easy to grow this crystal by the known conventional techniques.
- these crystals have a very high (for borate) thermal conductivity of ⁇ 16 W/m*K, It is an order of magnitude higher than that of BBO and LBO.
- the SBO crystal is one of a very few non-linear materials (if not the only one) which does not have two-photon absorption (TP A) at 266 nm - a nonlinear effect increasing the power loss and light- induced damage.
- TP A two-photon absorption
- the SBO/PbBO crystal is probably the only non-linear material capable of withstanding sustainable multi-watt operation (pulsed and CW) at 266 nm with fluencies typical for non-linear conversion regimes (-100-500 MW/cm 2 ).
- this group of borates is an ideal material for nonlinear interactions.
- a group of high power laser systems capable of operating in a UV frequency range. All of the disclosed systems have a common general optical schematic. The latter is provided with a laser source and at least one frequency converter so as to output sub-nanosecond, preferably picosecond pulses in a UV spectral region.
- ps fiber lasers participating in generating higher harmonics, such as UV light are advantageous over ns fiber lasers because the nonlinear crystals in the ps pulsed regime have longer useful life than that of crystals irradiated by ns pulses. This advantage becomes even more prominent when the SBO or PBO is used since there is no 2 -photon absorption is these crystals.
- FIG. 1 is a general optical schematic of the inventive laser system
- FIG. 2 shows a patterned SBO/PBO crystal of the inventive system
- FIG. 3 is an exemplary schematic of the inventive system of FIG. 1 used for generation of the FH.
- FIG. 4 is an exemplary schematic of the inventive system of FIG. 1 used for generation of the third and higher harmonics.
- FIG. 5 is an exemplary schematic of the inventive system of FIG. 1 used for generation of the fifth harmonic.
- FIG. 6 is an exemplary schematic of the inventive system of FIG. 1 used for parametric conversion.
- FIG. 7 is the SBO/PBO crystal of FIG. 2 configured from a single slab to provide a frequency conversion of the fundamental frequency into a plurality of successive harmonics.
- FIG. 1 illustrates a general optical schematic 40 of the inventive laser system.
- the schematic 40 is configured as a source of electromagnetic (EM) radiation 42 incident on a frequency converter 44 which is based, at least in part, on patterned SBO or PBO nonlinear crystal 10 and configured to convert a fundamental frequency into a higher harmonic.
- the converters are placed in a single-pass or multi-pass resonator.
- the EM source 42 is a laser system operating in various regimes which includes continuous a wave (CW) mode, quasi-continuous wave (QCW) mode and pulsed modes.
- source 42 is a high power source with the output of at least 1 kW and as high as of MWs.
- laser systems operating under a kW power level are also part of the disclosed subject matter.
- the configuration of source 42 is not limited to any particular lasing medium.
- it is a solid state laser system including fiber and yttrium aluminum glass (Y AG) lasing media, with the disk lasers being a subclass of YAGs.
- the light emitting ions doped in the lasing media include various rare-earth metals. Since an industrial range of fundamental wavelengths and their higher harmonics is mostly associated with laser sources emitting light in a 1 - 2 mm range, ions of ytterbium (Yb), erbium (Er), neodymium (Nd), and Thulium perhaps are most frequently used.
- the mentioned elements are however do not represent the exclusive list of all rare earth elements that may be used for light generation in the inventive system.
- the architecture of laser source 42 may be represented by a variety of specific configurations.
- the laser source may have a MOP A configuration including a combination of master oscillator (MO) 43 and power amplifier (PA) 44.
- the MO 43 may include semiconductors or fibers preferably operating at a single frequency.
- MO 43 can be configured in accordance with the schematics disclosed in PCT/US 15/65798 and PCT/US 15/52893 which are owned by the assignee of the current applications and incorporated here by reference in their entirety. Considering that modem power levels of known oscillators have reached a kW level, the architecture of source 42 may be represented only by lasers omitting thus the amplifier.
- laser source 42 preferably outputs a single frequency, single transverse mode sub-nanosecond output in the QCW and pulsed regime.
- a beam quality factor M 2 may be higher than 1, for example 1.5.
- frequency converter 44 operates to generate a second harmonic (SH), third harmonic (TH), fourth harmonic (FH), and other higher harmonics as well as to perform optical parametric interactions.
- the crystal SBO or PBO 10 is configured with a periodic structure 12 of domains 30 and 32 having respective opposite polarities +/- which alternate one another. These domains have highly parallel walls.
- the periodic structure 12 allows the use of a QPM technique to generate high harmonic of the pump light.
- Recent experiments conducted by the Applicants resulted in crystal 10 provided with a volume periodic pattern which includes a sequence of uniformly dimensioned 3D-domains 30, 32 having respective positive and negative polarities which alternate one another and provide the crystal with a clear aperture having a diameter of up to a few centimeters.
- the domains each are configured with a uniform thickness corresponding to the desired coherence length 1 and ranging from about 0.2 mm to about 20 mm and a clear aperture which has a dimeter varying from about 1 mm to about 5 cm.
- the crystal 10 can be utilized as an optical element, such as a frequency converter incorporated in a laser which operates in a variety of frequency ranges.
- crystal 10 configured to convert a fundamental frequency of laser source 42 to a DUV range, has a coherence length 1 ranging between 0.2 to about 5 nm.
- the volume pattern may extend through the entire thickness of crystal block 10 between faces +C and -C, or terminate at a distance from one of these faces.
- the crystal 10 is based on the discussed above unique qualities and disclosed in copending, co-owned US application 62781371which is filed concurrently with the subject matter application which incorporates it by reference in its entirety.
- the SBO/PBO 10 is characterized by a short UV absorption cut-off (l cutoff ) or wide energy bandgap (E g ) which guarantee the transmittance in the UV and DUV spectra.
- the large bandgap significantly decreases the two-photon absorption or multi-photon absorption, and thus, in turn, increases the laser-induced damage threshold in a crystal and results in reduced non-desirable thermo-optical effects. Linear absorption of borates is typically very low as well.
- SBO/PBO crystal 10 is particularly attractive when used in laser systems operating in ultraviolet/deep ultraviolet (UV/DUV) frequency ranges.
- UV/DUV lasers are widely employed in various applications. For instance, a DUV at 266 nm has been utilized as an external seed of a free-electron laser with outputs as short as about 4 nm so useful in the scientific research beyond the carbon K-edge.
- the industrial applications, laser machining of wide bandgap materials, microelectronics and many other are direct beneficiaries of the DUV lasers owing to their high photon energy.
- the conversion schemes are numerous and examples thereof are disclosed hereinbelow.
- an exemplary schematic setup of system 40 includes converter 46 configured with SHG 46 and FHG 48 stages.
- the SHG 46 doubles the frequency of the pump wave in a 1 mm wavelength range to Green light and the latter continuing frequency conversion to obtain ultraviolet/deep UV (UV/DUV 50) light at or lower than a 2xx nm wavelength.
- a pump wavelength at a 1060 nm output by source 42 (fundamental frequency w)
- a second harmonic 2w (532 nm wavelength) in SHG 46
- the SHG 46 may be based on BBO, LBO CLBO, SBO, PBO and other nonlinear crystals.
- the FHG 48 includes SBO/PBO crystal 10.
- FIG. 4 exemplifies a schematic configured to generate the third harmonic (THG) 50.
- the system 40 includes source 42 outputting light at fundamental frequency w which is incident on SHG 46.
- the latter 46 converts the fundamental frequency into second harmonic 2w.
- the THG 50 receives a remaining portion of light at the fundament frequency and second harmonic and combines these frequencies to create the third harmonic.
- the SHG 46 may have the configuration of FIG. 3, and so does THG 50 including SBO/PBO crystal 10.
- a non- inclusive example can be illustrated by a fundamental wavelength of 1064 nm which eventually is converted into the TH of about 355 nm.
- the system 40 may be further provided with a FiHG 52 combining the unused SH and generated TH.
- FIG. 5 illustrates still another example of system 40 with converter 44 configured to generate the fifth harmonic (FiHG).
- the converter 44 operates by initially generating the SH in SHG 46.
- the unused light at the fundamental (pump) is separated from the SH at the output of SHG 46 and further guided to the fifth harmonic generator (FiHG) 52 along a path defined by reflective elements, such as mirrors or prisms. If desired, the unconverted light at the fundamental frequency can be guided through FHG 48.
- SBO/PBP quasi phase matched crystal 10 can be used for frequency doubling, tripling etc, as well as for sum and difference frequency generation. It also can be used for parametric amplification. Referring to FIG. 6, light at a signal wavelength propagates through crystal 10 together with a pump beam of shorter wavelength resulting in several outputs which include an idler, residual pump beam and signal separate outputs, as well known to one of ordinary skill.
- FIG. 7 illustrates another configuration of system 40 including laser source 42 of FIG. 1, which is a diode laser in this schematic, and SBO/PBO 10.
- the latter is configured from a monolithic slab which can first double the fundamental frequency and further generate a higher harmonic at for example 355 nm and 266 nm. For this reason, the domain period along a path of light at the fundamental frequency through the slab varies from one for SHG and, then, for example, the FHG.
- Such a configuration can be used in a microchip of no longer than 5 - 10 mm and including a laser diode on vanadate and SBO/PBO 10 to produce a mW output.
- the configuration of crystal 10 may include more than two periods.
- the pulsed regime of the disclosed systems can be implemented by utilizing a chirp pulse amplification technique.
- the pulse laser sources further may be based on a passively mode locked or actively mode locked lasers outputting nanosecond, and sub nanosecond, i.e., femtosecond and picosecond pulses.
- the average power of the output of the disclosed pulsed systems may vary between milliwatts (mW) and about 100 W in UV/DUV frequency ranges.
- the disclosed schematic can operate generating harmonics higher than the fifth harmonic. Accordingly, other aspects, advantages, and modifications are within the scope of the following claims.
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Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201980083902.7A CN113196596B (en) | 2018-12-18 | 2019-12-18 | High power laser converter based on patterned SRB4BO7 or PBB4O7 crystals |
US17/415,090 US11719993B2 (en) | 2018-12-18 | 2019-12-18 | High power laser converter based on patterned SRB4B07 or PBB407 crystal |
KR1020217021906A KR102707500B1 (en) | 2018-12-18 | 2019-12-18 | High-power laser converters based on patterned SRB4BO7 or PBB4O7 crystals |
EP19898599.6A EP3881402B1 (en) | 2019-12-18 | High power laser converter based on patterned srb4bo7 or pbb407 crystal | |
JP2021535150A JP2022514745A (en) | 2018-12-18 | 2019-12-18 | High power laser transducer based on patterned SrB4O7 or PbB4O7 crystals |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201862781386P | 2018-12-18 | 2018-12-18 | |
US62/781,386 | 2018-12-18 |
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WO2020132043A1 true WO2020132043A1 (en) | 2020-06-25 |
WO2020132043A8 WO2020132043A8 (en) | 2021-06-10 |
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PCT/US2019/067135 WO2020132043A1 (en) | 2018-12-18 | 2019-12-18 | High power laser converter based on patterned srb4bo7 or pbb407 crystal |
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Country | Link |
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US (1) | US11719993B2 (en) |
JP (1) | JP2022514745A (en) |
KR (1) | KR102707500B1 (en) |
CN (1) | CN113196596B (en) |
WO (1) | WO2020132043A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11237455B2 (en) * | 2020-06-12 | 2022-02-01 | Kla Corporation | Frequency conversion using stacked strontium tetraborate plates |
US11567391B1 (en) | 2021-11-24 | 2023-01-31 | Kla Corporation | Frequency conversion using interdigitated nonlinear crystal gratings |
WO2023107298A1 (en) * | 2021-12-11 | 2023-06-15 | Kla Corporation | Deep ultraviolet laser using strontium tetraborate for frequency conversion |
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KR20210102390A (en) | 2021-08-19 |
EP3881402A4 (en) | 2022-09-07 |
JP2022514745A (en) | 2022-02-15 |
US20220066283A1 (en) | 2022-03-03 |
KR102707500B1 (en) | 2024-09-13 |
US11719993B2 (en) | 2023-08-08 |
EP3881402A1 (en) | 2021-09-22 |
CN113196596A (en) | 2021-07-30 |
WO2020132043A8 (en) | 2021-06-10 |
CN113196596B (en) | 2024-08-20 |
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