WO2020118877A1 - 有机发光二极管显示装置 - Google Patents

有机发光二极管显示装置 Download PDF

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Publication number
WO2020118877A1
WO2020118877A1 PCT/CN2019/072900 CN2019072900W WO2020118877A1 WO 2020118877 A1 WO2020118877 A1 WO 2020118877A1 CN 2019072900 W CN2019072900 W CN 2019072900W WO 2020118877 A1 WO2020118877 A1 WO 2020118877A1
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Prior art keywords
encapsulation layer
display device
organic light
emitting diode
light emitting
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PCT/CN2019/072900
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English (en)
French (fr)
Inventor
金江江
徐湘伦
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/323,541 priority Critical patent/US10804491B2/en
Publication of WO2020118877A1 publication Critical patent/WO2020118877A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an organic light emitting diode display device.
  • Organic light emitting diode organic light emitting diode, OLED
  • OLED organic light emitting diode
  • OLED organic electroluminescence display device
  • the encapsulation layer of the OLED display device and the light-emitting film layer are easily peeled between the encapsulation layer and the light-emitting film layer due to stress generated during bending or folding, thereby reducing the OLED display device Performance.
  • the encapsulation layer of the OLED display device and the light-emitting film layer are easily peeled between the encapsulation layer and the light-emitting film layer due to stress generated during bending or folding, thereby reducing the performance of the OLED display device .
  • the organic light emitting diode display device includes a flexible substrate, a pixel isolation layer, a plurality of pixels, a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer.
  • the pixel isolation layer is disposed on the flexible substrate.
  • the pixel is disposed on the flexible substrate.
  • the first inorganic encapsulation layer is provided on the pixel.
  • the first inorganic encapsulation layer includes at least one stress adjustment layer.
  • the first organic encapsulation layer is disposed on the first inorganic encapsulation layer.
  • the second inorganic encapsulation layer is disposed on the first organic encapsulation layer and covers the first inorganic encapsulation layer.
  • the distance between the two adjacent stress adjustment layers is greater than or equal to the length of one pixel.
  • the pixel isolation layer includes a plurality of openings arranged at intervals and support portions provided on both sides of each opening, and the stress adjustment layer is correspondingly disposed above the support portion of the pixel isolation layer.
  • the stress adjustment layer is a plurality of spaced-apart recesses disposed on the first inorganic encapsulation layer.
  • the thickness of the recess is smaller than the thickness of the first inorganic encapsulation layer.
  • the thickness of the concave portion ranges between 0.1 ⁇ m and 1 ⁇ m, and the width of the concave portion ranges between 50 ⁇ m and 1000 ⁇ m.
  • the ratio of the width of the recess to the thickness of the recess is between 500 and 10000.
  • the recesses are arranged at equal intervals on the first inorganic encapsulation layer or the distance between two adjacent recesses is greater than or equal to one opening.
  • a blocking member is provided in the recess.
  • the material of the barrier member includes Ag, Al, Ti, or a black organic polymer.
  • the present disclosure also provides an organic light emitting diode display device.
  • the organic light emitting diode display device includes a flexible substrate, a pixel isolation layer, a plurality of pixels, a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer.
  • the pixel isolation layer is disposed on the flexible substrate.
  • the pixel is disposed on the flexible substrate.
  • the first inorganic encapsulation layer is provided on the pixel.
  • the first inorganic encapsulation layer includes at least one stress adjustment layer.
  • the first organic encapsulation layer is disposed on the first inorganic encapsulation layer.
  • the second inorganic encapsulation layer is disposed on the first organic encapsulation layer and covers the first inorganic encapsulation layer.
  • the distance between two adjacent stress adjustment layers is greater than or equal to the length of one pixel.
  • the pixel isolation layer includes a plurality of openings spaced apart and support portions disposed on both sides of each opening, and the stress adjustment layer is correspondingly disposed on the pixel isolation layer. Above the support.
  • the stress adjustment layer is a plurality of spaced-apart recesses disposed on the first inorganic encapsulation layer.
  • the thickness of the recess is smaller than the thickness of the first inorganic encapsulation layer.
  • the thickness of the concave portion ranges between 0.1 ⁇ m and 1 ⁇ m, and the width of the concave portion ranges between 50 ⁇ m and 1000 ⁇ m.
  • the ratio of the width of the recess to the thickness of the recess is between 500 and 10000.
  • the recesses are arranged at equal intervals on the first inorganic encapsulation layer or the distance between two adjacent recesses is greater than or equal to one opening.
  • a blocking member is provided in the recess.
  • the material of the barrier member includes Ag, Al, Ti, or a black organic polymer.
  • the first inorganic encapsulation layer includes at least one stress adjustment layer, which can effectively reduce the organic light emitting layer of the pixel.
  • the separation problem caused during the folding process between the first inorganic encapsulation layers also improves the performance of the organic light emitting diode display device.
  • FIG. 1 shows a schematic structural diagram of an organic light emitting diode display device according to an embodiment of the present disclosure
  • FIG. 2 shows a schematic configuration diagram of a pixel isolation layer, a pixel area, and a stress adjustment layer according to an embodiment of the present disclosure
  • FIG. 3 shows a schematic structural view of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • FIG. 4 shows a schematic structural diagram of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • an organic light emitting diode display device 10 includes a flexible substrate 100, a pixel isolation layer 200, a plurality of pixels 300R, 300G, 300B, a first inorganic packaging layer 400, and a first organic packaging Layer 600 and the second inorganic encapsulation layer 700.
  • the pixel isolation layer 200 is disposed on the flexible substrate 100.
  • the pixels 300R, 300G, and 300B are disposed on the flexible substrate 100.
  • the first inorganic encapsulation layer 400 is disposed on the pixels 300R, 300G, and 300B, and includes at least one stress adjustment layer 500.
  • the first organic encapsulation layer 600 is disposed on the first inorganic encapsulation layer 400.
  • the second inorganic encapsulation layer 700 is disposed on the first organic encapsulation layer 600 and covers the first inorganic encapsulation layer 400.
  • the at least one stress adjustment layer 500 can effectively reduce the separation problem caused by the folding between the organic light-emitting layer of the pixels 300R, 300G, 300B and the first inorganic encapsulation layer 400, and also improve the organic light-emitting diode display device 10 Performance.
  • the first inorganic encapsulation layer 400 is divided into a plurality of regions by the stress adjustment layer 500, which can effectively reduce the organic light emitting layers of the pixels 300R, 300G, and 300B.
  • the separation problem caused during the folding process between the first inorganic encapsulation layers 400 also improves the performance of the organic light emitting diode display device 10.
  • Such localization of the first inorganic encapsulation layer 400 can be realized by mask design.
  • the pixels 300R, 300G, and 300B include an anode (also referred to as a pixel electrode) 301, an organic light-emitting layer 302R, 302G, 302B, and a cathode 303 that are sequentially arranged.
  • the organic light-emitting layers 302R, 302G, and 302B are disposed on a region of the anode 301 exposed by the pixel isolation layer 200.
  • the pixel isolation layer 200 is disposed on the flexible substrate 100 so as to overlap the upper portion of the edge of the anode 301.
  • the cathode 303 is disposed on the organic light emitting layers 302R, 302G, and 302B, and is made of a transparent material.
  • the cathode 303 is provided on substantially the entire upper side of the pixels 300R, 300G, 300B.
  • the organic light-emitting layers 302R, 302G, and 302B may be formed in the form of a red light-emitting layer 302R, a green light-emitting layer 302G, or a blue light-emitting layer 302B, and red light emission is separately deposited using a fine metal mask
  • the pixels 300R, 300G, and 300B may be divided into red pixels 300R, green pixels 300G, or blue pixels 300B.
  • the pixels 300R, 300G, 300B include the cathode 303 made of a transparent material to emit light toward the cathode 303. Therefore, the organic light emitting diode display device 10 may be implemented as a top emission (or double side emission) organic light emitting display device.
  • the cathode 303 is a common electrode shared by all the pixels 300R, 300G, and 300B. However, each pixel may have its own cathode to be electrically connected to the cathodes of other pixels.
  • the cathode 303 Since in a top emission or double side emission organic light emitting display device, the cathode 303 should transmit light, the cathode 303 is made of a transparent conductive layer.
  • the cathode 303 is made of ITO, for example.
  • the organic light emitting diode display device 10 can be applied to electronic products such as mobile phones or televisions, for example.
  • the distance between two adjacent stress adjustment layers 500 is greater than or equal to the length of one pixel 300R, 300G, 300B (as illustrated in FIG. 2 ).
  • the pixel isolation layer 200 includes a plurality of spaced-apart openings 201 and support portions 202 disposed on both sides of each opening 201, and the stress adjustment layer 500 is correspondingly disposed on the support of the pixel isolation layer 200 Above the unit 202.
  • the stress adjustment layer 500 is a plurality of recessed portions provided on the first inorganic encapsulation layer 400 at intervals.
  • the thickness of the concave portion is smaller than the thickness of the first inorganic encapsulation layer 400.
  • the thickness of the recess is between 0.1 ⁇ m and 1 ⁇ m, and the width of the recess is between 50 ⁇ m and 1000 ⁇ m.
  • the ratio of the width of the recess to the thickness of the recess is between 500 and 10,000.
  • the recesses are arranged at equal intervals on the first inorganic encapsulation layer 400 or the distance between two adjacent recesses is greater than or equal to one opening 201.
  • blocking members 601, 602 are provided in the recess.
  • the material of the blocking members 601 and 602 includes Ag, Al, Ti or black organic polymer.
  • the first distance between two adjacent stress adjustment layers 500 is greater than the length of two blue pixels 300B and one green pixel 300G.
  • the second distance between two adjacent stress adjusting layers 500 is greater than the length of one blue pixel 300B and two green pixels 300G.
  • the first distance between two adjacent stress adjustment layers 500 is greater than the second distance between two adjacent stress adjustment layers 500.
  • the distance between two adjacent stress adjustment layers 500 is greater than the length of two blue pixels 300B and two red pixels 300R.
  • the distance between all two adjacent stress adjustment layers 500 is greater than the length of two blue pixels 300B and two red pixels 300R.
  • the material of the flexible substrate 100 may be polyvinyl alcohol, polyimide, polyester, or the like.
  • the material of the first inorganic encapsulation layer 400 is selected from SiNx, SiOx, SiONx, SiCNx, Al2O3, TiO2, ZrO2, or a combination of the foregoing.
  • the thickness of the first inorganic encapsulation layer 400 is 0.5-1.5 ⁇ m.
  • the material of the first organic encapsulation layer 600 includes acrylic series, epoxy series, or silicone series.
  • the thickness of the first organic encapsulation layer 600 is 4-20 ⁇ m.
  • a blocking member 601 is provided in the recess 500 of the organic light emitting diode display device 20.
  • the material of the blocking member 601 is, for example, a metal material that is not easily oxidized, including Ag, Al, or Ti, so as to improve the performance of the first organic encapsulation layer 600 from water and oxygen.
  • a blocking member 602 is provided in the recess 500 of the organic light emitting diode display device 30.
  • the material of the blocking member 602 includes a black organic polymer, which prevents adjacent pixels from mixing light, thereby improving the contrast of the organic light emitting diode display device 30.
  • the width of the at least one stress adjusting layer 500 is between 50 ⁇ m and 1000 ⁇ m.
  • the thickness of at least one stress adjusting layer 500 ranges between 0.1 ⁇ m and 1 ⁇ m.
  • the ratio of the width of the at least one stress adjusting layer 500 to the thickness of the at least one stress adjusting layer 500 ranges between 500 and 10000.
  • the thickness of at least one stress adjusting layer 500 is smaller than the thickness of the first inorganic encapsulating layer 400.
  • the at least one stress adjusting layer 500 may include, for example, round holes or grooves.
  • the material of the second inorganic encapsulation layer 700 may be the same as the material of the first inorganic encapsulation layer 400.
  • the second inorganic encapsulation layer 700 may completely cover the first inorganic encapsulation layer 400.
  • the length of the second inorganic encapsulation layer 700 may also be the same as the length of the first inorganic encapsulation layer 400.
  • the first inorganic encapsulation layer includes at least one stress adjustment layer, which can effectively reduce the pixel between the organic light emitting layer and the first inorganic encapsulation layer in the folding process
  • the separation problem also improves the performance of the organic light emitting diode display device.
  • the first inorganic encapsulation layer is divided into multiple regions by the stress adjustment layer, which can effectively reduce the separation problem caused by the folding between the organic light-emitting layer of the pixel and the first inorganic encapsulation layer, and also improves the organic light emission Diode display device performance.
  • the regional design of the packaging structure of the organic light emitting diode display device can effectively reduce the stress generated by the bending or folding process between the organic light emitting layer and the first inorganic packaging layer, and improve the reliability of the organic light emitting diode display device.

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Abstract

本揭示提供有机发光二极管显示装置，其包括柔性基底、像素隔离层、多个像素、第一无机封装层、第一有机封装层及第二无机封装层。像素隔离层及像素设置在柔性基底上。第一无机封装层设置在像素上且包括至少一应力调节层。第一有机封装层设置在第一无机封装层上。第二无机封装层设置在第一有机封装层上且覆盖第一无机封装层。

Description

有机发光二极管显示装置 技术领域
本揭示涉及显示技术领域，特别涉及一种有机发光二极管显示装置。
 背景技术
有机发光二极管(organic light emitting diode，OLED)显示装置，也称为有机电致发光显示装置，是一种新兴的平板显示装置，由于其具有功耗低、发光亮度高、体积轻薄、响应速度快及易于实现柔性显示等优点，因而具有广阔的应用前景。
然而，在现有技术中，OLED显示装置的封装层和发光膜层之间容易因弯曲或折叠过程中产生的应力，而造成封装层和发光膜层之间发生剥离，从而降低了OLED显示装置的性能。
故，有需要提供一种有机发光二极管显示装置，以解决现有技术存在的问题。
 技术问题
在现有技术中，OLED显示装置的封装层和发光膜层之间容易因弯曲或折叠过程中产生的应力，而造成封装层和发光膜层之间发生剥离，从而降低了OLED显示装置的性能。
 技术解决方案
为解决上述技术问题，本揭示提供有机发光二极管显示装置。所述有机发光二极管显示装置包括柔性基底、像素隔离层、多个像素、第一无机封装层、第一有机封装层以及第二无机封装层。所述像素隔离层设置在所述柔性基底上。所述像素设置在所述柔性基底上。所述第一无机封装层设置在所述像素上。所述第一无机封装层包括至少一应力调节层。所述第一有机封装层设置在所述第一无机封装层。所述第二无机封装层设置在所述第一有机封装层上且覆盖所述第一无机封装层。所述相邻两应力调节层之间的距离大于或等于一个像素的长度。所述像素隔离层包括多个间隔设置的开口和设置在每一开口两侧的支撑部，所述应力调节层对应设置在所述像素隔离层的所述支撑部上方。
于本揭示其中的一实施例中，所述应力调节层是设置在所述第一无机封装层上的多个间隔设置的凹部。
于本揭示其中的一实施例中，所述凹部的厚度小于所述第一无机封装层的厚度。
于本揭示其中的一实施例中，所述凹部的厚度范围在0.1μm及1μm之间，所述凹部的宽度范围在50μm及1000μm之间。
于本揭示其中的一实施例中，所述凹部的宽度与所述凹部的厚度的比值范围在500及10000之间。
于本揭示其中的一实施例中，所述凹部在所述第一无机封装层上等间距设置或相邻两个凹部之间的距离大于或等于一个开口。
于本揭示其中的一实施例中，所述凹部内设有阻挡构件。
于本揭示其中的一实施例中，所述阻挡构件的材料包括Ag、Al、Ti或黑色有机聚合物。
本揭示还提供有机发光二极管显示装置。所述有机发光二极管显示装置包括柔性基底、像素隔离层、多个像素、第一无机封装层、第一有机封装层以及第二无机封装层。所述像素隔离层设置在所述柔性基底上。所述像素设置在所述柔性基底上。所述第一无机封装层设置在所述像素上。所述第一无机封装层包括至少一应力调节层。所述第一有机封装层设置在所述第一无机封装层。所述第二无机封装层设置在所述第一有机封装层上且覆盖所述第一无机封装层。
于本揭示其中的一实施例中，相邻两应力调节层之间的距离大于或等于一个像素的长度。
于本揭示其中的一实施例中，所述像素隔离层包括多个间隔设置的开口和设置在每一开口两侧的支撑部，所述应力调节层对应设置在所述像素隔离层的所述支撑部上方。
于本揭示其中的一实施例中，所述应力调节层是设置在所述第一无机封装层上的多个间隔设置的凹部。
于本揭示其中的一实施例中，所述凹部的厚度小于所述第一无机封装层的厚度。
于本揭示其中的一实施例中，所述凹部的厚度范围在0.1μm及1μm之间，所述凹部的宽度范围在50μm及1000μm之间。
于本揭示其中的一实施例中，所述凹部的宽度与所述凹部的厚度的比值范围在500及10000之间。
于本揭示其中的一实施例中，所述凹部在所述第一无机封装层上等间距设置或相邻两个凹部之间的距离大于或等于一个开口。
于本揭示其中的一实施例中，所述凹部内设有阻挡构件。
于本揭示其中的一实施例中，所述阻挡构件的材料包括Ag、Al、Ti或黑色有机聚合物。
 有益效果
相较于现有技术，为解决上述技术问题，本揭示的实施例中的有机发光二极管显示装置中，所述第一无机封装层包括至少一应力调节层，可以有效降低像素的有机发光层与第一无机封装层之间在折叠过程中造成的分离问题，也提高了有机发光二极管显示装置的性能。
 附图说明
图1显示根据本揭示的一实施例的有机发光二极管显示装置的结构示意图；
图2显示根据本揭示的一实施例的像素隔离层、像素区及应力调节层的配置示意图；
图3显示根据本揭示的一实施例的有机发光二极管显示装置的结构示意图；以及
图4显示根据本揭示的一实施例的有机发光二极管显示装置的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元是以相同标号表示。
参照图1及图2，本揭示的一实施例的有机发光二极管显示装置10包括柔性基底100、像素隔离层200、多个像素300R、300G、300B、第一无机封装层400、第一有机封装层600以及第二无机封装层700。所述像素隔离层200设置在所述柔性基底100上。所述像素300R、300G、300B设置在所述柔性基底100上。所述第一无机封装层400设置在所述像素300R、300G、300B上，且包括至少一应力调节层500。所述第一有机封装层600设置在所述第一无机封装层400上。所述第二无机封装层700设置在所述第一有机封装层600上且覆盖所述第一无机封装层400。所述至少一应力调节层500可以有效降低所述像素300R、300G、300B的有机发光层与第一无机封装层400之间在折叠过程中造成的分离问题，也提高了有机发光二极管显示装置10的性能。
于本揭示的实施例中的有机发光二极管显示装置10中，通过应力调节层500将第一无机封装层400分割为多块区域，可以有效降低所述像素300R、300G、300B的有机发光层与第一无机封装层400之间在折叠过程中造成的分离问题，也提高了有机发光二极管显示装置10的性能。这种第一无机封装层400的区域化可以通过掩模(mask)设计实现。
具体地，所述像素300R、300G、300B包括依次设置的阳极（也被称为像素电极）301、有机发光层302R、302G、302B、阴极303。所述有机发光层302R、302G、302B设置在所述阳极301上的被所述像素隔离层200暴露的区域。所述像素隔离层200设置在所述柔性基底100上以与所述阳极301的边缘的上部叠置。所述阴极303设置在所述有机发光层302R、302G、302B上，由透明材料制成。所述阴极303设置在所述像素300R、300G、300B的基本上整个上侧上。
具体地，所述有机发光层302R、302G、302B可以以红光发射层302R、绿光发射层302G或蓝光发射层302B的形式形成，利用精细金属掩模（fine metal mask）单独沉积红光发射层302R、绿光发射层302G或蓝光发射层302B。根据所述有机发光层302R、302G、302B的种类，所述像素300R、300G、300B可分为红色像素300R、绿色像素300G或蓝色像素300B。
具体地，所述像素300R、300G、300B包括由透明材料制成的所述阴极303，以朝向所述阴极303发射光。因此，有机发光二极管显示装置10可被实现为顶发射（或双侧发射）有机发光显示装置。在描述的实施例中，所述阴极303是被所有所述像素300R、300G、300B共用的共电极。然而，每个像素也可各自具有阴极以与其它像素的阴极电连接。
由于在顶发射或双侧发射有机发光显示装置中，所述阴极303应该透光，所以，所述阴极303由透明导电层制成。所述阴极303例如由ITO制成。
具体地，有机发光二极管显示装置10例如可应用于手机或电视机等电子产品。
具体地，相邻两应力调节层500之间的距离大于或等于一个像素300R、300G、300B的长度(如图2所例示)。
具体地，所述像素隔离层200包括多个间隔设置的开口201和设置在每一开口201两侧的支撑部202，所述应力调节层500对应设置在所述像素隔离层200的所述支撑部202的上方。
具体地，所述应力调节层500是设置在所述第一无机封装层400上的多个间隔设置的凹部。所述凹部的厚度小于所述第一无机封装层400的厚度。所述凹部的厚度范围在0.1μm及1μm之间，所述凹部的宽度范围在50μm及1000μm之间。所述凹部的宽度与所述凹部的厚度的比值范围在500及10000之间。所述凹部在所述第一无机封装层400上等间距设置或相邻两个凹部之间的距离大于或等于一个开口201。
具体地，所述凹部内设有阻挡构件601、602(如图3-4所例示)。所述阻挡构件601、602的材料包括Ag、Al、Ti或黑色有机聚合物。
如图1-2所例示，具体地，在第一方向上(例如垂直方向)，相邻两应力调节层500之间的第一距离大于二个蓝色像素300B及一个绿色像素300G的长度。在第一方向上，相邻两应力调节层500之间的第二距离大于一个蓝色像素300B及二个绿色像素300G的长度。相邻两应力调节层500之间的第一距离大于相邻两应力调节层500之间的第二距离。
具体地，在第二方向上(例如水平方向)，相邻两应力调节层500之间的距离大于二个蓝色像素300B及二个红色像素300R的长度。
具体地，在第二方向上，所有相邻两应力调节层500之间的距离均大于二个蓝色像素300B及二个红色像素300R的长度。
具体地，柔性基底100的材料可以是聚乙烯醇、聚酰亚胺或聚酯等。第一无机封装层400的材料是选自于SiNx、SiOx、SiONx、SiCNx、Al2O3、TiO2、ZrO2或前述的组合。第一无机封装层400的厚度是0.5-1.5μm。
具体地，第一有机封装层600的材料包括亚克力系列、环氧树脂系列或有机硅系列。第一有机封装层600的厚度是4-20μm。
参照图3，在一实施例中，有机发光二极管显示装置20的所述凹部500内设有阻挡构件601。所述阻挡构件601的材料例如为不易氧化的金属类材料，包括Ag、Al或Ti，提高第一有机封装层600隔绝水氧的性能。参照图4，在另一实施例中，有机发光二极管显示装置30的所述凹部500内设有阻挡构件602。所述阻挡构件602的材料包括黑色有机聚合物，用于防止相邻像素混光，从而提高有机发光二极管显示装置30的对比度。
具体地，至少一应力调节层500的宽度范围在50μm及1000μm之间。至少一应力调节层500的厚度范围在0.1μm及1μm之间。至少一应力调节层500的宽度与至少一应力调节层500的厚度的比值范围在500及10000之间。至少一应力调节层500的厚度小于第一无机封装层400的厚度。至少一应力调节层500例如可以包括圆孔或者凹槽等。
具体地，第二无机封装层700的材料可与第一无机封装层400的材料相同。第二无机封装层700可完全覆盖第一无机封装层400。第二无机封装层700的长度也可以与第一无机封装层400的长度相同。
由于本揭示的实施例中的有机发光二极管显示装置中，所述第一无机封装层包括至少一应力调节层，可以有效降低像素的有机发光层与第一无机封装层之间在折叠过程中造成的分离问题，也提高了有机发光二极管显示装置的性能。
此外，通过应力调节层将第一无机封装层分割为多块区域，可以有效降低所述像素的有机发光层与第一无机封装层之间在折叠过程中造成的分离问题，也提高了有机发光二极管显示装置的性能。通过有机发光二极管显示装置的封装结构的区域化设计，有效降低有机发光层与第一无机封装层之间因弯曲或折叠过程产生的应力，提高有机发光二极管显示装置的可靠性。
尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (18)

  1. 一种有机发光二极管显示装置，包括:
    柔性基底；
    像素隔离层，设置在所述柔性基底上；
    多个像素，设置在所述柔性基底上；
    第一无机封装层，设置在所述像素上，其中所述第一无机封装层包括至少一应力调节层；
    第一有机封装层，设置在所述第一无机封装层；以及
    第二无机封装层，设置在所述第一有机封装层上且覆盖所述第一无机封装层；
    其中相邻两应力调节层之间的距离大于或等于一个像素的长度；
    其中所述像素隔离层包括多个间隔设置的开口和设置在每一开口两侧的支撑部，所述应力调节层对应设置在所述像素隔离层的所述支撑部上方。
  2. 如权利要求1所述的有机发光二极管显示装置，其中所述应力调节层是设置在所述第一无机封装层上的多个间隔设置的凹部。
  3. 如权利要求2所述的有机发光二极管显示装置，其中所述凹部的厚度小于所述第一无机封装层的厚度。
  4. 如权利要求2所述的有机发光二极管显示装置，其中所述凹部的厚度范围在0.1μm及1μm之间，所述凹部的宽度范围在50μm及1000μm之间。
  5. 如权利要求2所述的有机发光二极管显示装置，其中所述凹部的宽度与所述凹部的厚度的比值范围在500及10000之间。
  6. 如权利要求2所述的有机发光二极管显示装置，其中所述凹部在所述第一无机封装层上等间距设置或相邻两个凹部之间的距离大于或等于一个开口。
  7. 如权利要求2所述的有机发光二极管显示装置，其中所述凹部内设有阻挡构件。
  8. 如权利要求7所述的有机发光二极管显示装置，其中所述阻挡构件的材料包括Ag、Al、Ti或黑色有机聚合物。
  9. 一种有机发光二极管显示装置，包括:
    柔性基底；
    像素隔离层，设置在所述柔性基底上；
    多个像素，设置在所述柔性基底上；
    第一无机封装层，设置在所述像素上，其中所述第一无机封装层包括至少一应力调节层；
    第一有机封装层，设置在所述第一无机封装层；以及
    第二无机封装层，设置在所述第一有机封装层上且覆盖所述第一无机封装层。
  10.     如权利要求9所述的有机发光二极管显示装置，其中相邻两应力调节层之间的距离大于或等于一个像素的长度。
  11.      如权利要求9所述的有机发光二极管显示装置，其中所述像素隔离层包括多个间隔设置的开口和设置在每一开口两侧的支撑部，所述应力调节层对应设置在所述像素隔离层的所述支撑部上方。
  12. 如权利要求11所述的有机发光二极管显示装置，其中所述应力调节层是设置在所述第一无机封装层上的多个间隔设置的凹部。
  13. 如权利要求12所述的有机发光二极管显示装置，其中所述凹部的厚度小于所述第一无机封装层的厚度。
  14. 如权利要求12所述的有机发光二极管显示装置，其中所述凹部的厚度范围在0.1μm及1μm之间，所述凹部的宽度范围在50μm及1000μm之间。
  15. 如权利要求12所述的有机发光二极管显示装置，其中所述凹部的宽度与所述凹部的厚度的比值范围在500及10000之间。
  16. 如权利要求12所述的有机发光二极管显示装置，其中所述凹部在所述第一无机封装层上等间距设置或相邻两个凹部之间的距离大于或等于一个开口。
  17. 如权利要求12所述的有机发光二极管显示装置，其中所述凹部内设有阻挡构件。
  18. 如权利要求17所述的有机发光二极管显示装置，其中所述阻挡构件的材料包括Ag、Al、Ti或黑色有机聚合物。
PCT/CN2019/072900 2018-12-13 2019-01-24 有机发光二极管显示装置 Ceased WO2020118877A1 (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653807A (zh) * 2016-12-01 2017-05-10 齐鹏 贴片式oled显示单元器件、显示屏及其制作方法
CN106910839A (zh) * 2015-09-15 2017-06-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN108448002A (zh) * 2018-04-09 2018-08-24 京东方科技集团股份有限公司 一种oled封装结构以及封装方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106654041B (zh) * 2016-12-05 2018-10-26 武汉华星光电技术有限公司 柔性oled显示器及其制作方法
CN108735791A (zh) * 2018-07-05 2018-11-02 云谷（固安）科技有限公司 显示面板及其制造方法和显示终端

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106910839A (zh) * 2015-09-15 2017-06-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN106653807A (zh) * 2016-12-01 2017-05-10 齐鹏 贴片式oled显示单元器件、显示屏及其制作方法
CN108448002A (zh) * 2018-04-09 2018-08-24 京东方科技集团股份有限公司 一种oled封装结构以及封装方法

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