WO2020093909A1 - Drive substrate manufacturing method, drive substrate, display panel and display device - Google Patents

Drive substrate manufacturing method, drive substrate, display panel and display device Download PDF

Info

Publication number
WO2020093909A1
WO2020093909A1 PCT/CN2019/114087 CN2019114087W WO2020093909A1 WO 2020093909 A1 WO2020093909 A1 WO 2020093909A1 CN 2019114087 W CN2019114087 W CN 2019114087W WO 2020093909 A1 WO2020093909 A1 WO 2020093909A1
Authority
WO
WIPO (PCT)
Prior art keywords
array
pitch
chip
substrate
transfer head
Prior art date
Application number
PCT/CN2019/114087
Other languages
French (fr)
Chinese (zh)
Inventor
张振华
徐映嵩
代伟男
汪杨鹏
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2020093909A1 publication Critical patent/WO2020093909A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device.
  • micro-LED (micro-LED) display panels are manufactured using transfer technology.
  • the basic principle of micro-transfer micro-LED arrays is roughly: using a patterned transfer head (Transfer), such as a convex structure Polydimethylsiloxane (PDMS) type transfer head, through the sticky PDMS transfer layer (Transfer layer) to suck the Micro LED from the supply substrate, and then align the PDMS transfer head with the receiving substrate, Then attach the Micro LED attached to the PDMS transfer head to the preset position of the receiving substrate, and then peel off the PDMS transfer head from the receiving substrate to complete the transfer of the Micro LEDs to form the Micro LED array.
  • Transfer patterned transfer head
  • the purpose of the present disclosure is to provide a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device.
  • a manufacturing method for driving a substrate including: providing a first chip array on a wafer substrate, the first chip array including chips arranged in an array at a first pitch;
  • An array of transfer heads provided on a retractable substrate is provided, the array of transfer heads includes transfer heads arranged in an array at a second pitch; the array of transfer heads before expansion is used to pick up a second from the wafer substrate Chip array, the chips in the second chip array are arranged in a third pitch array; the retractable substrate is stretched so that the chips in the second chip array are arranged in a fourth pitch array;
  • the transfer head array releasing the target chip in the second chip array to the chip bonding position of the driving substrate.
  • the fourth pitch is greater than the third pitch.
  • the second pitch is less than or equal to the first pitch.
  • the third pitch is greater than or equal to the first pitch.
  • the driving substrate includes chip bonding positions arranged in a fifth pitch array; wherein the fifth pitch is greater than or equal to the fourth pitch.
  • the first pitch is equal to the second pitch
  • the second pitch is equal to the third pitch
  • the fourth pitch is equal to the fifth pitch
  • the chip is an LED chip
  • the first chip array is a first LED array
  • providing a first chip array on a wafer substrate includes: Making an epitaxial LED on the wafer substrate; etching the epitaxial LED on the wafer substrate to obtain the first LED array.
  • providing an array of transfer heads provided on a retractable substrate includes: providing a fixed structure in which the array is arranged on the retractable substrate; generating on the fixed structure The transfer heads are arranged in an array to form the transfer head array.
  • the fixing structure is filled with an elastic material.
  • the transfer head includes an electrostatic transfer head or a PDMS transfer head.
  • using the transfer head array before stretching to pick up a second chip array from the substrate includes: snapping the transfer head array before stretching to the substrate On the first chip array, so that the transfer head and the corresponding chip are aligned; the loading current causes the transfer head array to generate an electrostatic adsorption force to pick up the required chip from the substrate completely or selectively; The substrate is removed to form the second chip array.
  • a driving substrate manufactured by the method described in any of the above embodiments.
  • a display panel including the driving substrate as described in the above embodiments.
  • a display device including the display panel as described in any one of the above embodiments.
  • the transfer head array by scaling the transfer head array to achieve a one-time transfer of the chip on the wafer substrate to the driving substrate, the chip transfer efficiency can be greatly improved, and it can be applied to the micro display Panel production.
  • FIG. 1 shows a flowchart of a method of manufacturing a driving substrate in an exemplary embodiment of the present disclosure.
  • FIG. 2 shows a flowchart of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
  • 3 and 4 show schematic diagrams of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
  • FIG. 5 shows a flowchart of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
  • FIG. 6 shows a schematic diagram of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
  • FIG. 7 shows a schematic diagram of a transfer head array after picking up LED chips on a wafer substrate and before stretching in an exemplary embodiment of the present disclosure.
  • FIG. 8 shows a schematic diagram of a stretched transfer head array in an exemplary embodiment of the present disclosure.
  • FIG. 9 shows a schematic diagram of a driving substrate in an exemplary embodiment of the present disclosure.
  • Example embodiments will now be described more fully with reference to the drawings. However, the example embodiments can be implemented in various forms and should not be construed as being limited to the examples set forth herein; the described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner.
  • many specific details are provided to give a sufficient understanding of the embodiments of the present disclosure. However, those skilled in the art will realize that the technical solutions of the present disclosure may be practiced without omitting one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted.
  • FIG. 1 shows a flowchart of a method for manufacturing a driving substrate in an exemplary embodiment of the present disclosure.
  • the manufacturing method of the driving substrate may include the following steps.
  • step S110 a first chip array on a wafer substrate is provided, and the first chip array includes chips arranged in an array at a first pitch.
  • the chip may be an LED chip, but the present disclosure is not limited thereto, and it may be any type of chip.
  • the wafer substrate is a carrier used in the production of integrated circuits, mostly refers to single crystal silicon wafers.
  • Monocrystalline silicon wafers are refined from ordinary silicon sand, and polycrystalline silicon is prepared through a series of measures such as dissolution, purification, and distillation.
  • the polycrystalline silicon is then melted and single crystal nuclei are pulled to form a single crystal silicon rod with a certain crystallographic orientation, single crystal silicon After the rod is polished and sliced, it becomes a wafer.
  • Wafer is the most commonly used semiconductor material, according to its diameter can be divided into 4 inches, 5 inches, 6 inches, 8 inches and so on. The larger the wafer, the more ICs (Integrated Circuits) that can be produced on the same wafer, which can reduce costs, but the requirements for material technology and production technology are higher.
  • step S120 an array of transfer heads provided on a retractable substrate is provided, the array of transfer heads including transfer heads arranged in an array at a second pitch.
  • the second distance may be less than or equal to the first distance.
  • the second pitch between the transfer heads on the transfer head array before stretching is equal to the first pitch between the chips on the wafer substrate
  • all transfers on the transfer head array can be performed The head picks up all the chips on the wafer substrate at once.
  • the first pitch is an integer multiple of the second pitch.
  • the first pitch is 2 ⁇ m and the second pitch is 1 ⁇ m, which is equivalent to picking up one chip every time a transfer head picks up, all chips can be picked up at once.
  • the second pitch may also be greater than the first pitch.
  • the transfer head array portion on the retractable substrate may be used to pick up the wafer substrate. The required chip.
  • step S130 the transfer head array before expansion is used to pick up a second chip array from the wafer substrate, and the chips in the second chip array are arranged in a third pitch array.
  • the third distance may be greater than or equal to the first distance.
  • the third pitch of the second chip array on the transfer head array before expansion is equal to the crystal The first pitch of the first chip array on the round substrate.
  • the third pitch of the second chip array on the transfer head array before scaling is larger than the wafer liner The first pitch of the first chip array on the bottom.
  • the transfer head array may pick up all the chips on the wafer substrate at once, or may pick up part of the chips on the wafer substrate at once, the present disclosure There are no restrictions on this.
  • step S140 the retractable substrate is stretched so that the chips in the second chip array are arranged in a fourth pitch array.
  • the retractable substrate may be bi-directionally stretched, for example, simultaneously stretched in the horizontal direction and the vertical direction, so that the distance between the chips in the second chip array after stretching reaches the set The fourth pitch.
  • the present disclosure is not limited to this, and it is also possible to expand and contract only the horizontal direction, or only the vertical direction, or expand and contract one direction first, and then expand and contract the other direction, as long as the distance after expansion and contraction can be satisfied Just meet the set requirements.
  • the fourth pitch may be greater than the third pitch.
  • the chip pitch on the wafer such as the LED pitch
  • the pixel pitch is usually larger than the LED array on the wafer, for example, the general wafer size is 8 inches, and the medium-sized notebook has 15 inches
  • the stretching of the retractable substrate is taken as an example for illustration, but the disclosure is not limited thereto, and the case of compressing the retractable substrate may refer to stretching the retractable substrate Examples of substrates.
  • the micro-display panel includes a driving substrate, the LED spacing on the wafer is generally 2 ⁇ m, and the scalable substrate is stretched so that The distance between the chips in the array becomes larger, so that the chips in the second chip array on the transfer head array are arranged in a fourth pitch (for example, 10 ⁇ m), so that all the wafers can be transferred at once The LED is transferred to the driving substrate, which improves the chip transfer efficiency.
  • the fourth pitch for example, 10 ⁇ m
  • the fourth pitch may be set according to the pixel density or pixel pitch of the display panel or display device to be manufactured, and is not limited to the above-mentioned numerical values.
  • the fourth pitch is greater than the third pitch as an example for description, the disclosure is not limited thereto, and in other embodiments, the fourth pitch may also be less than Is equal to the third pitch, and the scene that can be adapted at this time is that the first pitch between the chips on the wafer substrate is greater than or equal to the pixel density or pixel pitch of the display panel or display device to be fabricated, at this time, it can be passed
  • the retractable substrate is compressed to suit the pixel density or pixel pitch of the display panel.
  • step S150 the target chip in the second chip array is released to the chip bonding position of the driving substrate through the telescopic transfer head array.
  • the transfer head array may pick up all the chips on the wafer all at once, and then release part of the picked up chips to the chip bonding position on the drive substrate. In other embodiments, the transfer head array may also pick up all the chips on the wafer all at once, and then release all the picked up chips to the chip bonding position on the drive substrate. In still other embodiments, the transfer head array may also pick up some chips on the wafer at one time, and then release all the picked up chips to the chip bonding position on the drive substrate. In other embodiments, the transfer head array may also pick up some chips on the wafer at one time, and then release the picked up chips to the chip bonding position on the drive substrate. This disclosure does not limit this.
  • each display panel design corresponds to a different pixel pitch
  • the related art needs to redesign the transfer head array, and the method provided by the embodiments of the present disclosure adopts a telescopic scheme, which can realize the multi-use of the transfer head array and can be used repeatedly for many times.
  • the transfer head array needs to be redesigned according to different pixel pitches of the display panel to be manufactured, and the transfer head array does not need to be replaced.
  • the transfer heads in different rows and columns of the transfer head array can be used to absorb part of the LEDs on the wafer according to the difference in pixel pitch, or to absorb all of them at once and then selectively release some of the picked up LEDs to the driving substrate. flexible.
  • the driving substrate may include chip bonding positions arranged in a fifth pitch array; wherein the fifth pitch is greater than or equal to the fourth pitch.
  • the fifth pitch corresponds to the pixel density (Pixels Per Inch, PPI) or pixel pitch of the display panel to be manufactured.
  • PPIs correspond to arrays of chip bonding positions with different pitches on the driving substrate.
  • the larger the PPI the smaller the fifth pitch of the driving substrate, and the smaller the corresponding fourth pitch after expansion.
  • the first pitch is equal to the second pitch
  • the second pitch is equal to the third pitch
  • the fourth pitch is equal to the fifth pitch for example, but The present disclosure is not limited to this.
  • the first pitch is equal to the second pitch and the second pitch is equal to the third pitch
  • all the transfer heads on the transfer head array are used to pick up all the chips on the wafer at once
  • the fourth pitch is equal to the fifth pitch
  • the pitch between the array of transfer heads that pick up chips on the wafer is expanded to the fourth pitch, that is, the pixel pitch of the display panel to be manufactured, so that the transfer efficiency can be greatly improved , You can make drive substrate or display panel in one transfer.
  • the manufacturing method of the driving substrate improved by the embodiment of the present disclosure can be applied to the process of manufacturing a display panel by using a transfer technology to transfer chips.
  • a transfer head array with a retractable substrate Through a transfer head array with a retractable substrate, the chip on the wafer is stretched to a set value after being picked up Pitch, and then transfer the picked chip to the drive substrate to achieve electrical connection with the drive circuit of the display panel, thereby achieving pixel addressing drive.
  • the transfer head array with a retractable substrate provided by an embodiment of the present disclosure can be used in one machine and can be reused multiple times. , Medium and large size PPI display panels.
  • the array of transfer heads with retractable substrates provided by the embodiments of the present disclosure can use different transfer heads to suck the chips on the wafer according to different pixel pitches, or all the selective release chips, which is flexible in process.
  • the method can be used to achieve a one-time transfer, and the efficiency is greatly improved.
  • FIG. 2 shows a flowchart of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
  • the chip is an LED chip
  • the first chip array is a first LED array as an example for illustration.
  • step S110 may further include the following steps.
  • step S111 LED epitaxy is fabricated on the wafer substrate.
  • step S112 the LED epitaxial on the wafer substrate is etched to obtain the first LED array.
  • the first LED array when manufacturing the first LED array on the wafer, the first LED array may be directly formed on the wafer substrate, and the carrier substrate and the sacrificial layer are omitted And other manufacturing processes.
  • 3 and 4 show schematic diagrams of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
  • LED epitaxy is fabricated on a wafer (for example, sapphire), for example, GaN, p-doped, and QW (quantum well) are placed on the wafer in sequence. , N-doped and metal layer.
  • the LED epitaxial is the so-called LED semiconductor wafer.
  • the semiconductor wafer is composed of two parts, one part is a P-type semiconductor, in which holes are dominant, and the other part is an N-type semiconductor, where mainly electrons.
  • epitaxial methods can be divided into three types: liquid phase epitaxy (Liquid Phase Epitaxy, LPE), organometallic vapor phase epitaxy (Metal-organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy (Molecular Beam Epitaxy, MBE) .
  • LPE liquid phase epitaxy
  • MOCVD Metal-organic Chemical Vapor Deposition
  • MBE molecular beam epitaxy
  • MOCVD is the mainstream machine in the LED industry. Its advantages are fast epitaxy, good mass production capacity, and wide application fields.
  • P-type (N-type) materials changes the concentration of the main conductive carrier holes in the epitaxial layer.
  • the first LED array 402 is obtained by epitaxially etching the LED on the wafer substrate 401.
  • FIG. 5 shows a flowchart of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
  • the step S120 may further include the following steps.
  • step S121 a fixed structure arranged in an array is provided on the retractable substrate.
  • the fixing structure is filled with an elastic material.
  • the retractable substrate may be an island structure, the island is fixed and not retractable, and is surrounded by a stretchable elastic material.
  • the manufacturing process may include: light curing the polyacrylate substrate to form an island pattern.
  • the elastic material may be organic materials such as polyurethane and rubber.
  • step S122 the transfer heads are generated on the fixed structure, and the transfer heads are arranged in an array to form the transfer head array.
  • the array head is used to make the transfer head array on the island, so that the pitch of the transfer head array is consistent with the pitch of the first LED array on the wafer.
  • the array process is a process of forming an array on a carrier (such as a substrate), and generally the process includes cleaning ⁇ film formation ⁇ cleaning ⁇ photoresist coating ⁇ exposure ⁇ etching ⁇ photoresist stripping ⁇ cleaning ⁇ Test and other steps. It should be understood that some of the above steps may be omitted, split, or combined. The specific steps and implementation of the array process are well known to those of ordinary skill in the art, so they will not be described here.
  • the transfer head on the transfer head array may be an electrostatic transfer head, a PDMS (Polydimethylsiloxane, polydimethylsilane) transfer head, etc., which is not limited in this disclosure.
  • PDMS Polydimethylsiloxane, polydimethylsilane
  • the island structure on the retractable substrate is fixed, and the transfer head is made on the fixed island structure, which can expand and contract the retractable substrate while ensuring the stability of the transfer head .
  • FIG. 6 shows a schematic diagram of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
  • a fixed island 602 is provided on the retractable substrate 601. Then, a transfer head 603 is generated on the fixed island 602, and the transfer heads 603 are arranged in an array to form a transfer head array.
  • buckle the transfer head array on the first LED array on the wafer load the current after alignment to generate electrostatic attraction (all or selective) to pick up the required LED chips, and finally remove the wafer substrate (for example, Etch or laser method).
  • FIG. 7 shows a schematic diagram of a transfer head array after picking up LED chips on a wafer substrate and before stretching in an exemplary embodiment of the present disclosure.
  • the LED 701 on the stretchable substrate 601 before stretching is shown in FIG. 7.
  • Fig. 8 shows a schematic view of a stretched transfer head array in an exemplary embodiment of the present disclosure.
  • the LED 701 on the stretchable substrate 601 after stretching is shown in FIG. 8.
  • the drive backplane to be manufactured has positions for LED chip bonding, and is arranged in an array.
  • the stretchable substrate where the transfer head array that picks up the LED chips is bi-directionally stretched to a set interval to ensure that the distance between the stretched LED chips and the distance between the bonding positions on the drive substrate remain the same.
  • FIG. 9 shows a schematic diagram of a driving substrate in an exemplary embodiment of the present disclosure.
  • the transfer head array of the LED chip after being stretched is aligned with the driving substrate, and then a current signal is loaded to control the release of the LED chip, so that the LED chip is docked with the driving substrate, and then bonded to the display panel.
  • Drive circuit
  • the driving substrate may be any one of a printed circuit board, a TFT (Thin Film Transistor, thin film transistor) substrate, a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) substrate, etc., which may be used to drive an LED chip Illuminated display.
  • a TFT Thin Film Transistor, thin film transistor
  • CMOS Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor
  • the chip bonding position thereon is provided with an LED 802.
  • an embodiment of the present disclosure further provides a display panel, which may include the driving substrate described in any of the foregoing embodiments.
  • the display panel may be a micro display panel.
  • an embodiment of the present disclosure further provides a display device, which may include the display panel described in the foregoing examples.
  • a drive substrate in a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device, after a second array of chips on a wafer substrate is picked up by a retractable transfer head array, it is expanded to After setting the fourth pitch, the target chip of the picked chips is then transferred to the driving substrate, so that the electrical connection between the target chip and the driving substrate to be made can be achieved for pixel addressing driving of the display panel.
  • the technical solution provided by the embodiments of the present disclosure can adapt to the production of display panels with different pixel densities or pixel intervals without replacing the transfer head array.

Abstract

Provided are a drive substrate manufacturing method, a drive substrate, a display panel and a display device. The drive substrate manufacturing method comprises: providing a first chip array located on a wafer substrate, wherein the first chip array comprises chips in array arrangement at first intervals; providing a transfer head array arranged on an extendable substrate, wherein the transfer head array comprises transfer heads in array arrangement at second intervals; using the transfer head array before extending to pick up a second chip array from the wafer substrate, wherein chips of the second chip array are in array arrangement at third intervals; extending the extendable substrate such that the chips of the second chip array are arranged in array at fourth intervals; and releasing a target chip of the second chip array to a chip bonding position of the drive substrate, by means of the transfer head array after extending.

Description

驱动基板的制作方法、驱动基板、显示面板及显示装置Manufacturing method of driving substrate, driving substrate, display panel and display device
相关申请的交叉引用Cross-reference of related applications
本申请要求于2018年11月9日递交的中国专利申请第201811334368.6号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。This application claims the priority of China Patent Application No. 201811334368.6 filed on November 9, 2018. The contents of the above-mentioned Chinese Patent Application Publication are cited in full as a part of this application.
技术领域Technical field
本公开涉及显示技术领域,具体而言,涉及一种驱动基板的制作方法、驱动基板、显示面板及显示装置。The present disclosure relates to the field of display technology, and in particular, to a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device.
背景技术Background technique
相关技术中,微LED(micro-LED)显示面板的制作采用转印技术,微转印micro-LED阵列的基本原理大致为:使用具有图案化的传送头(Transfer),例如具有凸起结构的聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)类传送头,通过具有粘性的PDMS传送层(Transfer layer)将Micro LED bare chip从供给基板吸附起来,然后将PDMS传送头与接受基板进行对位,随后将PDMS传送头所吸附的Micro LED bare chip贴附到接受基板预设的位置上,再将PDMS传送头从接受基板上剥离,即可完成Micro LED bare chip的转移,形成Micro LED阵列。In the related art, micro-LED (micro-LED) display panels are manufactured using transfer technology. The basic principle of micro-transfer micro-LED arrays is roughly: using a patterned transfer head (Transfer), such as a convex structure Polydimethylsiloxane (PDMS) type transfer head, through the sticky PDMS transfer layer (Transfer layer) to suck the Micro LED from the supply substrate, and then align the PDMS transfer head with the receiving substrate, Then attach the Micro LED attached to the PDMS transfer head to the preset position of the receiving substrate, and then peel off the PDMS transfer head from the receiving substrate to complete the transfer of the Micro LEDs to form the Micro LED array.
需要说明的是,在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解,因此可以包括不构成对本领域普通技术人员已知的相关技术的信息。It should be noted that the information disclosed in the above background section is only for enhancing the understanding of the background of the present disclosure, and therefore may include information that does not constitute related technology known to those of ordinary skill in the art.
发明内容Summary of the invention
本公开的目的在于提供一种驱动基板的制作方法、驱动基板、显示面板及显示装置。The purpose of the present disclosure is to provide a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device.
本公开的其他特性和优点将通过下面的详细描述变得清晰,或者部分地通过本公开的实践而习得。Other features and advantages of the present disclosure will become clear through the following detailed description, or partly learned through the practice of the present disclosure.
根据本公开的一个方面,提供一种用于驱动基板的制作方法,包括:提供位于晶圆衬底上的第一芯片阵列,所述第一芯片阵列包括以第一间距阵列排布的芯片;提供设置于可伸缩衬底上的转移头阵列,所述转移头阵列包括以第二间距阵列排布的转移头;利用伸缩前的所述转移头阵列从所述晶圆衬底上拾取第二芯片阵列,所述第二芯片阵列中的芯片以第三间距阵列排布;伸缩所述可伸缩衬底,以使所述第二芯片阵列中的芯片以第四间距阵列排布;通过伸缩后的所述转移头阵列,将所述第二芯片阵列中的目标芯片释放至驱动基板的芯片键合位置。According to an aspect of the present disclosure, a manufacturing method for driving a substrate is provided, including: providing a first chip array on a wafer substrate, the first chip array including chips arranged in an array at a first pitch; An array of transfer heads provided on a retractable substrate is provided, the array of transfer heads includes transfer heads arranged in an array at a second pitch; the array of transfer heads before expansion is used to pick up a second from the wafer substrate Chip array, the chips in the second chip array are arranged in a third pitch array; the retractable substrate is stretched so that the chips in the second chip array are arranged in a fourth pitch array; The transfer head array, releasing the target chip in the second chip array to the chip bonding position of the driving substrate.
在本公开的一种示例性实施例中,所述第四间距大于所述第三间距。In an exemplary embodiment of the present disclosure, the fourth pitch is greater than the third pitch.
在本公开的一种示例性实施例中,所述第二间距小于等于所述第一间距。In an exemplary embodiment of the present disclosure, the second pitch is less than or equal to the first pitch.
在本公开的一种示例性实施例中,所述第三间距大于等于所述第一间距。In an exemplary embodiment of the present disclosure, the third pitch is greater than or equal to the first pitch.
在本公开的一种示例性实施例中,所述驱动基板上包括以第五间距阵列排布的芯片键合位置;其中,所述第五间距大于等于所述第四间距。In an exemplary embodiment of the present disclosure, the driving substrate includes chip bonding positions arranged in a fifth pitch array; wherein the fifth pitch is greater than or equal to the fourth pitch.
在本公开的一种示例性实施例中,所述第一间距等于所述第二间距,所述第二间距等于所述第三间距,所述第四间距等于所述第五间距。In an exemplary embodiment of the present disclosure, the first pitch is equal to the second pitch, the second pitch is equal to the third pitch, and the fourth pitch is equal to the fifth pitch.
在本公开的一种示例性实施例中,所述芯片为LED芯片,所述第一芯片阵列为第一LED阵列;其中,提供位于晶圆衬底上的第一芯片阵列,包括:在所述晶圆衬底上制作LED磊晶;刻蚀所述晶圆衬底上的LED磊晶获得所述第一LED阵列。In an exemplary embodiment of the present disclosure, the chip is an LED chip, and the first chip array is a first LED array; wherein, providing a first chip array on a wafer substrate includes: Making an epitaxial LED on the wafer substrate; etching the epitaxial LED on the wafer substrate to obtain the first LED array.
在本公开的一种示例性实施例中,提供设置于可伸缩衬底上的转移头阵列,包括:在所述可伸缩衬底上设置阵列排布的固定结构;在所述固定结构上生成所述转移头,所述转移头呈阵列排布形成所述转移头阵列。In an exemplary embodiment of the present disclosure, providing an array of transfer heads provided on a retractable substrate includes: providing a fixed structure in which the array is arranged on the retractable substrate; generating on the fixed structure The transfer heads are arranged in an array to form the transfer head array.
在本公开的一种示例性实施例中,所述固定结构周围填充弹性 材料。In an exemplary embodiment of the present disclosure, the fixing structure is filled with an elastic material.
在本公开的一种示例性实施例中,所述转移头包括静电转移头或者PDMS转移头。In an exemplary embodiment of the present disclosure, the transfer head includes an electrostatic transfer head or a PDMS transfer head.
在本公开的一种示例性实施例中,利用伸缩前的所述转移头阵列从所述衬底上拾取第二芯片阵列,包括:将伸缩前的所述转移头阵列扣到所述衬底上的所述第一芯片阵列上,以使转移头与相应的芯片进行对位;加载电流使所述转移头阵列产生静电吸附力全部或者选择性地从所述衬底上拾取所需芯片;移除所述衬底形成所述第二芯片阵列。In an exemplary embodiment of the present disclosure, using the transfer head array before stretching to pick up a second chip array from the substrate includes: snapping the transfer head array before stretching to the substrate On the first chip array, so that the transfer head and the corresponding chip are aligned; the loading current causes the transfer head array to generate an electrostatic adsorption force to pick up the required chip from the substrate completely or selectively; The substrate is removed to form the second chip array.
根据本公开的一个方面,提供一种驱动基板,采用如上述任一实施例所述的方法制作。According to an aspect of the present disclosure, there is provided a driving substrate manufactured by the method described in any of the above embodiments.
根据本公开的一个方面,提供一种显示面板,包括如上述实施例所述的驱动基板。According to an aspect of the present disclosure, there is provided a display panel including the driving substrate as described in the above embodiments.
根据本公开的一个方面,提供一种显示装置,包括如上述任一实施例所述的显示面板。According to an aspect of the present disclosure, there is provided a display device including the display panel as described in any one of the above embodiments.
在另一些实施例中,通过伸缩所述转移头阵列,以实现将晶圆衬底上的芯片一次性转移至驱动基板上,可以较大地提高芯片的转印效率,可以将其应用于微显示面板的制作。In some other embodiments, by scaling the transfer head array to achieve a one-time transfer of the chip on the wafer substrate to the driving substrate, the chip transfer efficiency can be greatly improved, and it can be applied to the micro display Panel production.
应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本公开。It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and do not limit the present disclosure.
本节提供本公开中描述的技术的各种实现或示例的概述,并不是所公开技术的全部范围或所有特征的全面公开。This section provides an overview of various implementations or examples of the technology described in this disclosure, and is not a comprehensive disclosure of the full scope or all features of the disclosed technology.
附图说明BRIEF DESCRIPTION
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。The drawings herein are incorporated into and constitute a part of this specification, show embodiments consistent with this disclosure, and are used together with the specification to explain the principles of this disclosure. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, without paying any creative work, other drawings can be obtained based on these drawings.
图1示出本公开示例性实施例中一种驱动基板的制作方法的流 程图。FIG. 1 shows a flowchart of a method of manufacturing a driving substrate in an exemplary embodiment of the present disclosure.
图2示出图1实施例中的步骤S110的一示例性实施例的流程图。FIG. 2 shows a flowchart of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
图3和4示出图1实施例中的步骤S110的一示例性实施例的示意图。3 and 4 show schematic diagrams of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
图5示出图1实施例中的步骤S120的一示例性实施例的流程图。FIG. 5 shows a flowchart of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
图6示出图1实施例中的步骤S120的一示例性实施例的示意图。FIG. 6 shows a schematic diagram of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
图7示出本公开示例性实施例中一种拾取晶圆衬底上的LED芯片后且拉伸前的转移头阵列的示意图。7 shows a schematic diagram of a transfer head array after picking up LED chips on a wafer substrate and before stretching in an exemplary embodiment of the present disclosure.
图8示出本公开示例性实施例中一种拉伸后的转移头阵列的示意图。FIG. 8 shows a schematic diagram of a stretched transfer head array in an exemplary embodiment of the present disclosure.
图9示出本公开示例性实施例中一种驱动基板的示意图。FIG. 9 shows a schematic diagram of a driving substrate in an exemplary embodiment of the present disclosure.
具体实施方式detailed description
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的范例;所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中,提供许多具体细节从而给出对本公开的实施方式的充分理解。然而,本领域技术人员将意识到,可以实践本公开的技术方案而省略所述特定细节中的一个或更多,或者可以采用其它的方法、组元、装置、步骤等。Example embodiments will now be described more fully with reference to the drawings. However, the example embodiments can be implemented in various forms and should not be construed as being limited to the examples set forth herein; the described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to give a sufficient understanding of the embodiments of the present disclosure. However, those skilled in the art will realize that the technical solutions of the present disclosure may be practiced without omitting one or more of the specific details, or other methods, components, devices, steps, etc. may be adopted.
需要指出的是,在附图中,为了图示的清晰可能会夸大层和区域的尺寸。而且可以理解,当元件或层被称为在另一元件或层“上”时,它可以直接在其他元件上,或者可以存在中间的层。另外,可以理解,当元件或层被称为在另一元件或层“下”时,它可以直接在其他元件下,或者可以存在一个以上的中间的层或元件。另外,还可以理解,当层或元件被称为在两层或两个元件“之间”时,它可以为两层或两个元件之间唯一的层,或还可以存在一个以上的中间层或元件。通篇相似的参考标记指示相似的元件。It should be noted that in the drawings, the size of layers and regions may be exaggerated for clarity of illustration. And it is understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or intervening layers may be present. In addition, it can be understood that when an element or layer is referred to as being “under” another element or layer, it can be directly under the other element, or more than one intervening layer or element may be present. In addition, it can also be understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or more than one intervening layer may also be present Or components. Similar reference signs indicate similar elements throughout.
图1示出本公开示例性实施例中一种驱动基板的制作方法的流程图。FIG. 1 shows a flowchart of a method for manufacturing a driving substrate in an exemplary embodiment of the present disclosure.
如图1所示,本公开实施方式提供的驱动基板的制作方法可以包括以下步骤。As shown in FIG. 1, the manufacturing method of the driving substrate provided by the embodiments of the present disclosure may include the following steps.
在步骤S110中,提供位于晶圆衬底(wafer)上的第一芯片阵列,所述第一芯片阵列包括以第一间距阵列排布的芯片。In step S110, a first chip array on a wafer substrate is provided, and the first chip array includes chips arranged in an array at a first pitch.
本公开实施例中,所述芯片可以是LED芯片,但本公开并不限定于此,其可以是任意类型的芯片。In the embodiment of the present disclosure, the chip may be an LED chip, but the present disclosure is not limited thereto, and it may be any type of chip.
其中,晶圆衬底(wafer)是生产集成电路所用的载体,多指单晶硅圆片。单晶硅圆片由普通硅砂提炼,经过溶解、提纯、蒸馏一系列措施制得多晶硅,多晶硅再经熔融、单晶晶核提拉制成具有一定晶体学取向的单晶硅棒,单晶硅棒经过抛光、切片之后,就成为了wafer。wafer是最常用的半导体材料,按其直径可以分为4英寸、5英寸、6英寸、8英寸等。wafer越大,同一圆片上可生产的芯片(Integrated Circuit,IC)就越多,可降低成本,但对材料技术和生产技术的要求更高。Among them, the wafer substrate (wafer) is a carrier used in the production of integrated circuits, mostly refers to single crystal silicon wafers. Monocrystalline silicon wafers are refined from ordinary silicon sand, and polycrystalline silicon is prepared through a series of measures such as dissolution, purification, and distillation. The polycrystalline silicon is then melted and single crystal nuclei are pulled to form a single crystal silicon rod with a certain crystallographic orientation, single crystal silicon After the rod is polished and sliced, it becomes a wafer. Wafer is the most commonly used semiconductor material, according to its diameter can be divided into 4 inches, 5 inches, 6 inches, 8 inches and so on. The larger the wafer, the more ICs (Integrated Circuits) that can be produced on the same wafer, which can reduce costs, but the requirements for material technology and production technology are higher.
在步骤S120中,提供设置于可伸缩衬底上的转移头阵列,所述转移头阵列包括以第二间距阵列排布的转移头。In step S120, an array of transfer heads provided on a retractable substrate is provided, the array of transfer heads including transfer heads arranged in an array at a second pitch.
本公开实施例中,所述第二间距可以小于等于所述第一间距。In the embodiment of the present disclosure, the second distance may be less than or equal to the first distance.
例如,当伸缩前的所述转移头阵列上的转移头之间的第二间距等于所述晶圆衬底上的芯片之间的第一间距时,可以通过所述转移头阵列上的全部转移头一次性将所述晶圆衬底上的所有芯片全部拾取。For example, when the second pitch between the transfer heads on the transfer head array before stretching is equal to the first pitch between the chips on the wafer substrate, all transfers on the transfer head array can be performed The head picks up all the chips on the wafer substrate at once.
再例如,第一间距是第二间距的整数倍,例如假设第一间距是2μm,第二间距为1μm,相当于每间隔一个转移头拾取一个芯片,就可以一次性将所有芯片全部拾取。For another example, the first pitch is an integer multiple of the second pitch. For example, assuming that the first pitch is 2 μm and the second pitch is 1 μm, which is equivalent to picking up one chip every time a transfer head picks up, all chips can be picked up at once.
需要说明的是,在其他实施例中,所述第二间距也可以大于所述第一间距,此时可以通过所述可伸缩衬底上的转移头阵列部分拾取所述晶圆衬底上的所需芯片。It should be noted that, in other embodiments, the second pitch may also be greater than the first pitch. In this case, the transfer head array portion on the retractable substrate may be used to pick up the wafer substrate. The required chip.
在步骤S130中,利用伸缩前的所述转移头阵列从所述晶圆衬底上拾取第二芯片阵列,所述第二芯片阵列中的芯片以第三间距阵列排布。In step S130, the transfer head array before expansion is used to pick up a second chip array from the wafer substrate, and the chips in the second chip array are arranged in a third pitch array.
本公开实施例中,所述第三间距可以大于等于所述第一间距。In the embodiment of the present disclosure, the third distance may be greater than or equal to the first distance.
例如,当伸缩前的所述转移头阵列一次性将所述晶圆衬底上的所有芯片全部拾取时,伸缩前的所述转移头阵列上的第二芯片阵列的第三间距等于所述晶圆衬底上的第一芯片阵列的第一间距。For example, when the transfer head array before expansion picks up all the chips on the wafer substrate at once, the third pitch of the second chip array on the transfer head array before expansion is equal to the crystal The first pitch of the first chip array on the round substrate.
再例如,当伸缩前的所述转移头阵列一次拾取所述晶圆衬底上的部分芯片时,伸缩前的所述转移头阵列上的第二芯片阵列的第三间距大于所述晶圆衬底上的第一芯片阵列的第一间距。For another example, when the transfer head array before scaling picks up some chips on the wafer substrate at once, the third pitch of the second chip array on the transfer head array before scaling is larger than the wafer liner The first pitch of the first chip array on the bottom.
需要说明的是,本公开实施例中,所述转移头阵列可以一次性将所述晶圆衬底上的所有芯片全部拾取,也可以一次拾取所述晶圆衬底上的部分芯片,本公开对此不作限定。It should be noted that, in the embodiment of the present disclosure, the transfer head array may pick up all the chips on the wafer substrate at once, or may pick up part of the chips on the wafer substrate at once, the present disclosure There are no restrictions on this.
在步骤S140中,伸缩所述可伸缩衬底,以使所述第二芯片阵列中的芯片以第四间距阵列排布。In step S140, the retractable substrate is stretched so that the chips in the second chip array are arranged in a fourth pitch array.
本公开实施例中,可以对所述可伸缩衬底进行双向伸缩,例如同时朝水平方向和垂直方向伸缩,以使得伸缩后的所述第二芯片阵列中的芯片之间的间距达到设定的所述第四间距。但本公开并不限定于此,也可以仅对水平方向进行伸缩,或者仅对垂直方向进行伸缩,或者先对其中一个方向伸缩,然后再对另一个方向进行伸缩,只要能够满足伸缩后的间距满足设定需求即可。In the embodiment of the present disclosure, the retractable substrate may be bi-directionally stretched, for example, simultaneously stretched in the horizontal direction and the vertical direction, so that the distance between the chips in the second chip array after stretching reaches the set The fourth pitch. However, the present disclosure is not limited to this, and it is also possible to expand and contract only the horizontal direction, or only the vertical direction, or expand and contract one direction first, and then expand and contract the other direction, as long as the distance after expansion and contraction can be satisfied Just meet the set requirements.
在示例性实施例中,所述第四间距可以大于所述第三间距。这是因为一般的,wafer上的芯片例如LED间距小于待制作的显示面板的像素间距,这样对降低待制作的显示面板的成本是有利的。相关技术中,由于wafer上的LED阵列与待制作的显示面板的像素间距不同,通常像素间距要大于wafer上的LED阵列的间距,例如一般wafer尺寸为8英寸,而中尺寸的笔记本有15寸,而电视机、台式机等的尺寸更大,所以相关技术中必然需要多次转移,才能将wafer上的全部LED转移到待制作的显示面板或者显示装置的驱动基板上。因此,在下面的实施例中,以拉伸所述可伸缩衬底为例进行举例说明,但本公开并不限定于此,压缩所述可伸缩衬底的情形可以参照拉伸所述可伸缩衬底的实施例。In an exemplary embodiment, the fourth pitch may be greater than the third pitch. This is because, in general, the chip pitch on the wafer, such as the LED pitch, is smaller than the pixel pitch of the display panel to be manufactured, which is advantageous for reducing the cost of the display panel to be manufactured. In the related art, since the LED array on the wafer is different from the pixel pitch of the display panel to be made, the pixel pitch is usually larger than the LED array on the wafer, for example, the general wafer size is 8 inches, and the medium-sized notebook has 15 inches However, TVs, desktops, etc. are larger in size, so in the related art, multiple transfers are necessary to transfer all the LEDs on the wafer to the drive panel of the display panel or display device to be manufactured. Therefore, in the following embodiments, the stretching of the retractable substrate is taken as an example for illustration, but the disclosure is not limited thereto, and the case of compressing the retractable substrate may refer to stretching the retractable substrate Examples of substrates.
而本公开实施例中,以制作微显示面板为例,所述微显示面板包括驱动基板,则wafer上的LED间距一般为2μm,拉伸所述可伸 缩衬底使得所述第二芯片阵列中的芯片之间的间距变大,以使转移头阵列上的所述第二芯片阵列中的芯片以第四间距(例如可以为10μm)阵列排布,这样就可以实现一次性将wafer上的所有LED转移至驱动基板上,提高了芯片的转移效率。In the embodiments of the present disclosure, taking a micro-display panel as an example, the micro-display panel includes a driving substrate, the LED spacing on the wafer is generally 2 μm, and the scalable substrate is stretched so that The distance between the chips in the array becomes larger, so that the chips in the second chip array on the transfer head array are arranged in a fourth pitch (for example, 10 μm), so that all the wafers can be transferred at once The LED is transferred to the driving substrate, which improves the chip transfer efficiency.
需要说明的是,所述第四间距可以根据待制作的显示面板或者显示装置的像素密度或者像素间距来设置,并不限于上述例举的数值。It should be noted that the fourth pitch may be set according to the pixel density or pixel pitch of the display panel or display device to be manufactured, and is not limited to the above-mentioned numerical values.
需要说明的是,虽然上述举例中,以所述第四间距大于所述第三间距为例进行说明,但本公开并不限定于此,在其他实施例中,所述第四间距也可以小于等于所述第三间距,此时可以适应的场景是,晶圆衬底上芯片之间的第一间距大于等于所述待制作的显示面板或者显示装置的像素密度或者像素间距,此时可以通过压缩所述可伸缩衬底,以适应显示面板的像素密度或者像素间距。It should be noted that although in the above example, the fourth pitch is greater than the third pitch as an example for description, the disclosure is not limited thereto, and in other embodiments, the fourth pitch may also be less than Is equal to the third pitch, and the scene that can be adapted at this time is that the first pitch between the chips on the wafer substrate is greater than or equal to the pixel density or pixel pitch of the display panel or display device to be fabricated, at this time, it can be passed The retractable substrate is compressed to suit the pixel density or pixel pitch of the display panel.
在步骤S150中,通过伸缩后的所述转移头阵列,将所述第二芯片阵列中的目标芯片释放至驱动基板的芯片键合位置。In step S150, the target chip in the second chip array is released to the chip bonding position of the driving substrate through the telescopic transfer head array.
在一些实施例中,所述转移头阵列可以一次性全部拾取wafer上的全部芯片,然后将拾取的部分芯片释放至所述驱动基板上的芯片键合位置。在另一些实施例中,所述转移头阵列也可以一次性全部拾取wafer上的全部芯片,然后将拾取的全部芯片释放至所述驱动基板上的芯片键合位置。在又一些实施例中,所述转移头阵列还可以一次拾取wafer上的部分芯片,然后将拾取的全部芯片释放至所述驱动基板上的芯片键合位置。在其他实施例中,所述转移头阵列还可以一次拾取wafer上的部分芯片,然后将拾取的部分芯片释放至所述驱动基板上的芯片键合位置。本公开对此不作限定。In some embodiments, the transfer head array may pick up all the chips on the wafer all at once, and then release part of the picked up chips to the chip bonding position on the drive substrate. In other embodiments, the transfer head array may also pick up all the chips on the wafer all at once, and then release all the picked up chips to the chip bonding position on the drive substrate. In still other embodiments, the transfer head array may also pick up some chips on the wafer at one time, and then release all the picked up chips to the chip bonding position on the drive substrate. In other embodiments, the transfer head array may also pick up some chips on the wafer at one time, and then release the picked up chips to the chip bonding position on the drive substrate. This disclosure does not limit this.
由于每个显示面板设计对应不同的像素间距,相关技术需要重新设计转移头阵列,而本公开实施例提供的方法采用伸缩方案,可以实现转移头阵列的一机多用,可以多次重复使用,不需要根据待制作的显示面板的像素间距的不同重新设计转移头阵列,也不需要更换转移头阵列。此外,还可以根据像素间距的不同,采用所述转移头阵列中不同行列的转移头吸取wafer上的部分LED,或者一次性全部吸取 然后再选择性释放拾取的部分LED至驱动基板上,制作过程灵活。Since each display panel design corresponds to a different pixel pitch, the related art needs to redesign the transfer head array, and the method provided by the embodiments of the present disclosure adopts a telescopic scheme, which can realize the multi-use of the transfer head array and can be used repeatedly for many times. The transfer head array needs to be redesigned according to different pixel pitches of the display panel to be manufactured, and the transfer head array does not need to be replaced. In addition, the transfer heads in different rows and columns of the transfer head array can be used to absorb part of the LEDs on the wafer according to the difference in pixel pitch, or to absorb all of them at once and then selectively release some of the picked up LEDs to the driving substrate. flexible.
在示例性实施例中,所述驱动基板上可以包括以第五间距阵列排布的芯片键合位置;其中,所述第五间距大于等于所述第四间距。In an exemplary embodiment, the driving substrate may include chip bonding positions arranged in a fifth pitch array; wherein the fifth pitch is greater than or equal to the fourth pitch.
本公开实施例中,所述第五间距对应待制作的显示面板的像素密度(Pixels Per Inch,PPI)或者像素间距。不同的PPI对应驱动基板上不同间距的芯片键合位置阵列,一般地,PPI越大,驱动基板的所述第五间距越小,则伸缩后的所述第四间距相应的越小。In the embodiment of the present disclosure, the fifth pitch corresponds to the pixel density (Pixels Per Inch, PPI) or pixel pitch of the display panel to be manufactured. Different PPIs correspond to arrays of chip bonding positions with different pitches on the driving substrate. Generally, the larger the PPI, the smaller the fifth pitch of the driving substrate, and the smaller the corresponding fourth pitch after expansion.
在下面的实施例中,以所述第一间距等于所述第二间距,所述第二间距等于所述第三间距,所述第四间距等于所述第五间距为例进行举例说明,但本公开并不限定于此。当所述第一间距等于所述第二间距、且所述第二间距等于所述第三间距时,利用所述转移头阵列上的全部转移头一次性将wafer上的全部芯片拾取;当所述第四间距等于所述第五间距时,将拾取wafer上芯片的转移头阵列之间的间距伸缩至所述第四间距即待制作的显示面板的像素间距,这样,可以大幅度提高转移效率,可以一次转移即可制作驱动基板或者显示面板。In the following embodiments, the first pitch is equal to the second pitch, the second pitch is equal to the third pitch, and the fourth pitch is equal to the fifth pitch for example, but The present disclosure is not limited to this. When the first pitch is equal to the second pitch and the second pitch is equal to the third pitch, all the transfer heads on the transfer head array are used to pick up all the chips on the wafer at once; When the fourth pitch is equal to the fifth pitch, the pitch between the array of transfer heads that pick up chips on the wafer is expanded to the fourth pitch, that is, the pixel pitch of the display panel to be manufactured, so that the transfer efficiency can be greatly improved , You can make drive substrate or display panel in one transfer.
本公开实施方式提高的驱动基板的制作方法,可以应用于利用转移技术转移芯片制作显示面板的流程中,通过具有可伸缩衬底的转移头阵列,在拾取wafer上的芯片之后伸缩至设定的间距,然后将拾取的芯片转移到驱动基板上以实现与显示面板的驱动电路的电连接,从而实现像素寻址驱动。一方面,本公开实施例提供的具有可伸缩衬底的转移头阵列可以一机多用,并可以多次重复使用,可以应用于不同像素间隔或像素密度的显示面板的制作,例如可以应用于小、中、大尺寸各PPI的显示面板的制作。另一方面,本公开实施例提供的具有可伸缩衬底的转移头阵列可以根据像素间距不一样采用不同行列的转移头吸取wafer上的芯片,或者全部吸取选择性释放芯片,过程灵活。在一些实施例中,应用该方法可以实现一次性转移,效率大幅提高。The manufacturing method of the driving substrate improved by the embodiment of the present disclosure can be applied to the process of manufacturing a display panel by using a transfer technology to transfer chips. Through a transfer head array with a retractable substrate, the chip on the wafer is stretched to a set value after being picked up Pitch, and then transfer the picked chip to the drive substrate to achieve electrical connection with the drive circuit of the display panel, thereby achieving pixel addressing drive. On the one hand, the transfer head array with a retractable substrate provided by an embodiment of the present disclosure can be used in one machine and can be reused multiple times. , Medium and large size PPI display panels. On the other hand, the array of transfer heads with retractable substrates provided by the embodiments of the present disclosure can use different transfer heads to suck the chips on the wafer according to different pixel pitches, or all the selective release chips, which is flexible in process. In some embodiments, the method can be used to achieve a one-time transfer, and the efficiency is greatly improved.
图2示出图1实施例中的步骤S110的一示例性实施例的流程图。FIG. 2 shows a flowchart of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
在本公开实施例中,以所述芯片为LED芯片,所述第一芯片阵列为第一LED阵列为例进行举例说明。In the embodiment of the present disclosure, the chip is an LED chip, and the first chip array is a first LED array as an example for illustration.
如图2所示,步骤S110可以进一步包括以下步骤。As shown in FIG. 2, step S110 may further include the following steps.
在步骤S111中,在所述晶圆衬底上制作LED磊晶。In step S111, LED epitaxy is fabricated on the wafer substrate.
在步骤S112中,刻蚀所述晶圆衬底上的LED磊晶获得所述第一LED阵列。In step S112, the LED epitaxial on the wafer substrate is etched to obtain the first LED array.
与相关技术相比,本公开实施例中,在制作wafer上的第一LED阵列时,可以直接在晶圆衬底上形成所述第一LED阵列即可,省去了载体衬底、牺牲层等的制作工序。Compared with the related art, in the embodiment of the present disclosure, when manufacturing the first LED array on the wafer, the first LED array may be directly formed on the wafer substrate, and the carrier substrate and the sacrificial layer are omitted And other manufacturing processes.
图3和4示出图1实施例中的步骤S110的一示例性实施例的示意图。3 and 4 show schematic diagrams of an exemplary embodiment of step S110 in the embodiment of FIG. 1.
如图3所示,在晶圆衬底(wafer)(例如,蓝宝石)制作LED磊晶,例如,在wafer依次放置GaN、p-掺杂(p-doped)、QW(quantum well,量子阱)、n-掺杂(n-doped)以及金属层(metal layer)。As shown in FIG. 3, LED epitaxy is fabricated on a wafer (for example, sapphire), for example, GaN, p-doped, and QW (quantum well) are placed on the wafer in sequence. , N-doped and metal layer.
其中,LED磊晶就是所谓的LED半导体晶片,半导体晶片由两部分组成,一部分是P型半导体,在它里面空穴占主导地位,另一部分是N型半导体,在这里边主要是电子。Among them, the LED epitaxial is the so-called LED semiconductor wafer. The semiconductor wafer is composed of two parts, one part is a P-type semiconductor, in which holes are dominant, and the other part is an N-type semiconductor, where mainly electrons.
其中,磊晶方式可以分为三种:液相磊晶(Liquid Phase Epitaxy,LPE)、有机金属气相磊晶(Metal-organic Chemical Vapor Deposition,MOCVD)、分子束磊晶(Molecular Beam Epitaxy,MBE)。其中,MOCVD是LED业界主流机台,其优点是磊晶的速度快,量产能力佳,应用领域广。要在单晶基板上沿特定方向成长为单晶晶体,并控制其厚度及掺质浓度。其中掺入P型(N型)材料改变磊晶层中主要导电载子电洞浓度。Among them, epitaxial methods can be divided into three types: liquid phase epitaxy (Liquid Phase Epitaxy, LPE), organometallic vapor phase epitaxy (Metal-organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy (Molecular Beam Epitaxy, MBE) . Among them, MOCVD is the mainstream machine in the LED industry. Its advantages are fast epitaxy, good mass production capacity, and wide application fields. To grow into a single crystal on a single crystal substrate in a specific direction, and control its thickness and dopant concentration. The doping of P-type (N-type) materials changes the concentration of the main conductive carrier holes in the epitaxial layer.
如图4所示,将晶圆衬底401上的LED磊晶刻蚀得到第一LED阵列402。As shown in FIG. 4, the first LED array 402 is obtained by epitaxially etching the LED on the wafer substrate 401.
图5示出图1实施例中的步骤S120的一示例性实施例的流程图。FIG. 5 shows a flowchart of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
如图5所示,所述步骤S120可以进一步包括以下步骤。As shown in FIG. 5, the step S120 may further include the following steps.
在步骤S121中,在所述可伸缩衬底上设置阵列排布的固定结构。In step S121, a fixed structure arranged in an array is provided on the retractable substrate.
在示例性实施例中,所述固定结构周围填充弹性材料。In an exemplary embodiment, the fixing structure is filled with an elastic material.
例如所述可伸缩衬底可以为岛结构,岛固定不可伸缩,周围填充可伸缩的弹性材料。其制作流程可以包括:对聚丙烯酸酯衬底光照固化形成岛图案。For example, the retractable substrate may be an island structure, the island is fixed and not retractable, and is surrounded by a stretchable elastic material. The manufacturing process may include: light curing the polyacrylate substrate to form an island pattern.
其中,所述弹性材料可以为聚氨酯、橡胶等有机材料。Wherein, the elastic material may be organic materials such as polyurethane and rubber.
在步骤S122中,在所述固定结构上生成所述转移头,所述转移头呈阵列排布形成所述转移头阵列。In step S122, the transfer heads are generated on the fixed structure, and the transfer heads are arranged in an array to form the transfer head array.
本公开实施例中,在岛上利用array工艺制作转移头阵列,可以使得所述转移头阵列的间距与wafer上的第一LED阵列的间距一致。根据本公开的实施例,array工艺是在载体(例如基板)上形成阵列的工艺,通常该工艺包括清洗→成膜→清洗→光刻胶涂布→曝光→刻蚀→光刻胶剥离→清洗→测试等步骤。应当理解的是,上述步骤中的一些步骤可以省略、拆分或合并。array工艺的具体步骤和实现方式对本领域普通技术人员而言是公知的,因此在这里将不再赘述。In the embodiment of the present disclosure, the array head is used to make the transfer head array on the island, so that the pitch of the transfer head array is consistent with the pitch of the first LED array on the wafer. According to an embodiment of the present disclosure, the array process is a process of forming an array on a carrier (such as a substrate), and generally the process includes cleaning → film formation → cleaning → photoresist coating → exposure → etching → photoresist stripping → cleaning → Test and other steps. It should be understood that some of the above steps may be omitted, split, or combined. The specific steps and implementation of the array process are well known to those of ordinary skill in the art, so they will not be described here.
其中,所述转移头阵列上的转移头可以为静电转移头、PDMS(Polydimethylsiloxane,聚二甲基硅烷)转移头等,本公开对此不作限定。The transfer head on the transfer head array may be an electrostatic transfer head, a PDMS (Polydimethylsiloxane, polydimethylsilane) transfer head, etc., which is not limited in this disclosure.
本公开实施例中,可伸缩衬底上的岛结构是固定不定的,将转移头制作于固定不动的岛结构上,可以在伸缩所述可伸缩衬底的同时,保证转移头的稳定性。In the embodiment of the present disclosure, the island structure on the retractable substrate is fixed, and the transfer head is made on the fixed island structure, which can expand and contract the retractable substrate while ensuring the stability of the transfer head .
图6示出图1实施例中的步骤S120的一示例性实施例的示意图。FIG. 6 shows a schematic diagram of an exemplary embodiment of step S120 in the embodiment of FIG. 1.
如图6所示,在可伸缩衬底601上设置固定岛602。然后,在固定岛602上生成转移头603,转移头603呈阵列排布形成转移头阵列。As shown in FIG. 6, a fixed island 602 is provided on the retractable substrate 601. Then, a transfer head 603 is generated on the fixed island 602, and the transfer heads 603 are arranged in an array to form a transfer head array.
然后,把转移头阵列扣在wafer上的第一LED阵列上,对位后加载电流产生静电吸附力(全部或选择性)拾取所需LED芯片,最后移除晶圆衬底(例如,利用刻蚀或激光方法)。Then, buckle the transfer head array on the first LED array on the wafer, load the current after alignment to generate electrostatic attraction (all or selective) to pick up the required LED chips, and finally remove the wafer substrate (for example, Etch or laser method).
图7示出本公开示例性实施例中一种拾取晶圆衬底上的LED芯片后且拉伸前的转移头阵列的示意图。7 shows a schematic diagram of a transfer head array after picking up LED chips on a wafer substrate and before stretching in an exemplary embodiment of the present disclosure.
拉伸前的可伸缩衬底601上的LED 701如图7所示。The LED 701 on the stretchable substrate 601 before stretching is shown in FIG. 7.
图8示出本公开示例性实施例中一种拉伸后的转移头阵列的示 意图。Fig. 8 shows a schematic view of a stretched transfer head array in an exemplary embodiment of the present disclosure.
拉伸后的可伸缩衬底601上的LED 701如图8所示。The LED 701 on the stretchable substrate 601 after stretching is shown in FIG. 8.
本公开实施例中,待制作的驱动背板上有用于LED芯片键合的位置,并且成阵列形式排布。将拾取LED芯片的转移头阵列所在的可伸缩衬底进行双向拉伸至设定的间隔,保证拉伸后的LED芯片之间的间距与驱动基板上的键合位置之间的间距保持一致。In the embodiment of the present disclosure, the drive backplane to be manufactured has positions for LED chip bonding, and is arranged in an array. The stretchable substrate where the transfer head array that picks up the LED chips is bi-directionally stretched to a set interval to ensure that the distance between the stretched LED chips and the distance between the bonding positions on the drive substrate remain the same.
图9示出本公开示例性实施例中一种驱动基板的示意图。FIG. 9 shows a schematic diagram of a driving substrate in an exemplary embodiment of the present disclosure.
本公开实施例中,将拉伸后的拾取LED芯片的转移头阵列与驱动基板对位,然后加载电流信号,控制释放LED芯片,让LED芯片与驱动基板对接,然后键合连接到显示面板的驱动电路上。In the embodiment of the present disclosure, the transfer head array of the LED chip after being stretched is aligned with the driving substrate, and then a current signal is loaded to control the release of the LED chip, so that the LED chip is docked with the driving substrate, and then bonded to the display panel. Drive circuit.
其中,所述驱动基板可以为印刷电路板、TFT(Thin Film Transistor,薄膜晶体管)基板、CMOS(Complementary Metal Oxide Semiconductor,互补金属氧化物半导体)基板等中的任意一种,可以用于驱动LED芯片发光显示。Wherein, the driving substrate may be any one of a printed circuit board, a TFT (Thin Film Transistor, thin film transistor) substrate, a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor) substrate, etc., which may be used to drive an LED chip Illuminated display.
如图9所示,以驱动基板为阵列基板(TFT Array)801为例,其上的芯片键合位置设置有LED 802。As shown in FIG. 9, taking the driving substrate as an array substrate (TFT) 801 as an example, the chip bonding position thereon is provided with an LED 802.
进一步的,本公开实施方式还提供了一种显示面板,可以包括上述任一实施例所述的驱动基板。Further, an embodiment of the present disclosure further provides a display panel, which may include the driving substrate described in any of the foregoing embodiments.
本公开实施例中,所述显示面板可以为微显示面板。In the embodiment of the present disclosure, the display panel may be a micro display panel.
进一步的,本公开实施方式还提供了一种显示装置,可以包括上述实施例所述的显示面板。Further, an embodiment of the present disclosure further provides a display device, which may include the display panel described in the foregoing examples.
本公开的某些实施例的驱动基板的制作方法、驱动基板、显示面板及显示装置中,通过可伸缩的转移头阵列,在拾取晶圆衬底上的第二芯片阵列之后,将其伸缩至设定的第四间距,然后将拾取的芯片中的目标芯片转移到驱动基板上,从而可以实现目标芯片与待制作的驱动基板的电连接以用于实现显示面板的像素寻址驱动。一方面,本公开实施例提供的技术方案可以在不更换转移头阵列的前提下,能够自适应不同像素密度或者像素间隔的显示面板的制作。In some embodiments of the present disclosure, in a method for manufacturing a drive substrate, a drive substrate, a display panel, and a display device, after a second array of chips on a wafer substrate is picked up by a retractable transfer head array, it is expanded to After setting the fourth pitch, the target chip of the picked chips is then transferred to the driving substrate, so that the electrical connection between the target chip and the driving substrate to be made can be achieved for pixel addressing driving of the display panel. On the one hand, the technical solution provided by the embodiments of the present disclosure can adapt to the production of display panels with different pixel densities or pixel intervals without replacing the transfer head array.
尽管在附图中以特定顺序描述了本公开中方法的各个步骤,但是,这并非要求或者暗示必须按照该特定顺序来执行这些步骤,或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的,可以省略某些步骤,将多个步骤合并为一个步骤执行,以及/或者将一个步骤分解为多个步骤执行等。Although the various steps of the method in the present disclosure are described in a specific order in the drawings, this does not require or imply that the steps must be performed in the specific order, or all the steps shown must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step for execution, and / or one step may be decomposed into multiple steps for execution, etc.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本公开的真正范围和精神由所附的权利要求指出。Those skilled in the art will easily think of other embodiments of the present disclosure after considering the description and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptive changes of the present disclosure that follow the general principles of the present disclosure and include common general knowledge or customary technical means in the technical field not disclosed in the present disclosure . The description and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are pointed out by the appended claims.

Claims (18)

  1. 一种驱动基板的制作方法,包括:A method for manufacturing a driving substrate, including:
    提供位于晶圆衬底上的第一芯片阵列,所述第一芯片阵列包括以第一间距阵列排布的芯片;Providing a first chip array on a wafer substrate, the first chip array including chips arranged in an array at a first pitch;
    提供设置于可伸缩衬底上的转移头阵列,所述转移头阵列包括以第二间距阵列排布的转移头;Providing an array of transfer heads arranged on a retractable substrate, the array of transfer heads including transfer heads arranged in an array at a second pitch;
    利用伸缩前的所述转移头阵列从所述晶圆衬底上拾取第二芯片阵列,所述第二芯片阵列中的芯片以第三间距阵列排布;Picking up a second chip array from the wafer substrate using the transfer head array before expansion, and the chips in the second chip array are arranged in a third pitch array;
    伸缩所述可伸缩衬底,以使所述第二芯片阵列中的芯片以第四间距阵列排布;Retracting the retractable substrate so that the chips in the second chip array are arranged in a fourth pitch array;
    通过伸缩后的所述转移头阵列,将所述第二芯片阵列中的目标芯片释放至驱动基板的芯片键合位置。Through the transfer head array after expansion and contraction, the target chip in the second chip array is released to the chip bonding position of the driving substrate.
  2. 根据权利要求1所述的方法,其中,所述第四间距大于所述第三间距。The method of claim 1, wherein the fourth pitch is greater than the third pitch.
  3. 根据权利要求1或2所述的方法,其中,所述第二间距小于等于所述第一间距。The method according to claim 1 or 2, wherein the second pitch is less than or equal to the first pitch.
  4. 如权利要求3所述的方法,其中,所述第一间距是所述第二间距的整数倍。The method of claim 3, wherein the first pitch is an integer multiple of the second pitch.
  5. 根据权利要求1-4任一项所述的方法,其中,所述第三间距大于等于所述第一间距。The method according to any one of claims 1 to 4, wherein the third pitch is greater than or equal to the first pitch.
  6. 根据权利要求1-5任一项所述的方法,其中,所述驱动基板上包括以第五间距阵列排布的芯片键合位置;The method according to any one of claims 1-5, wherein the driving substrate includes chip bonding positions arranged in an array at a fifth pitch;
    其中,所述第五间距大于等于所述第四间距。Wherein, the fifth pitch is greater than or equal to the fourth pitch.
  7. 根据权利要求6所述的方法,其中,所述第一间距等于所述第二间距,所述第二间距等于所述第三间距,所述第四间距等于所述第五间距。The method of claim 6, wherein the first pitch is equal to the second pitch, the second pitch is equal to the third pitch, and the fourth pitch is equal to the fifth pitch.
  8. 根据权利要求1-7任一项所述的方法,其中,所述芯片为LED芯片,所述第一芯片阵列为第一LED阵列;其中,提供位于晶圆衬底上的第一芯片阵列,包括:The method according to any one of claims 1-7, wherein the chip is an LED chip, and the first chip array is a first LED array; wherein, a first chip array on a wafer substrate is provided, include:
    在所述晶圆衬底上制作LED磊晶;Making an LED epitaxial on the wafer substrate;
    刻蚀所述晶圆衬底上的LED磊晶获得所述第一LED阵列。Etching the LED epitaxial on the wafer substrate to obtain the first LED array.
  9. 根据权利要求1-8任一项所述的方法,其中,提供设置于可伸缩衬底上的转移头阵列,包括:The method according to any one of claims 1-8, wherein providing an array of transfer heads disposed on a retractable substrate includes:
    在所述可伸缩衬底上设置阵列排布的固定结构;A fixed structure arranged in an array is arranged on the retractable substrate;
    在所述固定结构上生成所述转移头,所述转移头呈阵列排布形成所述转移头阵列。The transfer heads are generated on the fixed structure, and the transfer heads are arranged in an array to form the transfer head array.
  10. 根据权利要求9所述的方法,其中,所述固定结构周围填充弹性材料。The method according to claim 9, wherein the fixed structure is filled with an elastic material.
  11. 根据权利要求9所述的方法,其中,所述固定结构包括固定不动的岛结构。The method of claim 9, wherein the fixed structure includes a fixed island structure.
  12. 根据权利要求11所述的方法上,其中,所述转移头的阵列通过array工艺形成在所述岛结构上。The method according to claim 11, wherein the array of transfer heads is formed on the island structure by an array process.
  13. 根据权利要求1-12任一项所述的方法,其中,所述转移头包括静电转移头或者PDMS转移头。The method according to any one of claims 1-12, wherein the transfer head comprises an electrostatic transfer head or a PDMS transfer head.
  14. 根据权利要求1-13任一项所述的方法,其中,利用伸缩前的所述转移头阵列从所述晶圆衬底上拾取第二芯片阵列,包括:The method according to any one of claims 1 to 13, wherein picking up a second chip array from the wafer substrate using the transfer head array before expansion includes:
    将伸缩前的所述转移头阵列扣到所述晶圆衬底上的所述第一芯片阵列上,以使转移头与相应的芯片进行对位;Snap the transfer head array before expansion onto the first chip array on the wafer substrate, so that the transfer head is aligned with the corresponding chip;
    加载电流使所述转移头阵列产生静电吸附力选择性地从所述晶圆衬底上拾取所需芯片;The loading current causes the transfer head array to generate electrostatic adsorption force to selectively pick up the required chips from the wafer substrate;
    移除所述晶圆衬底形成所述第二芯片阵列。The wafer substrate is removed to form the second chip array.
  15. 根据权利要求14所述的方法,其中,所述移除所述晶圆衬底形成所述第二芯片阵列包括利用刻蚀或激光方法移除所述晶圆衬底。The method of claim 14, wherein the removing the wafer substrate to form the second chip array includes removing the wafer substrate using an etching or laser method.
  16. 一种驱动基板,采用如权利要求1至15任一项所述的方法制作。A driving substrate manufactured by the method according to any one of claims 1 to 15.
  17. 一种显示面板,包括如权利要求16所述的驱动基板。A display panel comprising the driving substrate according to claim 16.
  18. 一种显示装置,包括如权利要求17所述的显示面板。A display device comprising the display panel according to claim 17.
PCT/CN2019/114087 2018-11-09 2019-10-29 Drive substrate manufacturing method, drive substrate, display panel and display device WO2020093909A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811334368.6A CN109449102B (en) 2018-11-09 2018-11-09 Manufacturing method of driving substrate, display panel and display device
CN201811334368.6 2018-11-09

Publications (1)

Publication Number Publication Date
WO2020093909A1 true WO2020093909A1 (en) 2020-05-14

Family

ID=65550875

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/114087 WO2020093909A1 (en) 2018-11-09 2019-10-29 Drive substrate manufacturing method, drive substrate, display panel and display device

Country Status (2)

Country Link
CN (1) CN109449102B (en)
WO (1) WO2020093909A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109449102B (en) * 2018-11-09 2021-03-19 京东方科技集团股份有限公司 Manufacturing method of driving substrate, display panel and display device
CN109950194B (en) * 2019-04-11 2021-04-16 京东方科技集团股份有限公司 Chip transfer substrate and chip transfer method
JP7377656B2 (en) * 2019-09-19 2023-11-10 株式会社ジャパンディスプレイ Device transfer equipment and device module fabrication method
US11574895B2 (en) * 2019-12-19 2023-02-07 Innolux Corporation Method of manufacturing electronic device
CN111162037B (en) * 2019-12-31 2023-09-26 中芯集成电路(宁波)有限公司 Method for transferring chip to wafer
CN113782560B (en) * 2021-09-17 2023-08-11 厦门大学 Nitride transistor-based light emitting device and integrated micro LED micro display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1349205A (en) * 2000-10-06 2002-05-15 索尼株式会社 Method for assembling components
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
CN108364581A (en) * 2018-03-29 2018-08-03 南方科技大学 A kind of preparation method and micro display screen of light emitting diode micro display screen
CN109449102A (en) * 2018-11-09 2019-03-08 京东方科技集团股份有限公司 Production method, drive substrate, display panel and the display device of drive substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2794443B1 (en) * 1999-06-02 2001-06-22 Commissariat Energie Atomique METHOD FOR TRANSFERRING ELEMENTS AND DEVICE FOR PROVIDING SAME
WO2006125206A2 (en) * 2005-05-19 2006-11-23 Avery Dennison Corporation Method and apparatus for rfid device assembly
CN202389950U (en) * 2011-12-21 2012-08-22 日月光半导体制造股份有限公司 Chip suction device and equipment
CN106058010B (en) * 2016-07-26 2019-02-01 深圳市华星光电技术有限公司 The transfer method of micro- light emitting diode matrix

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1349205A (en) * 2000-10-06 2002-05-15 索尼株式会社 Method for assembling components
US8349116B1 (en) * 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
CN108364581A (en) * 2018-03-29 2018-08-03 南方科技大学 A kind of preparation method and micro display screen of light emitting diode micro display screen
CN109449102A (en) * 2018-11-09 2019-03-08 京东方科技集团股份有限公司 Production method, drive substrate, display panel and the display device of drive substrate

Also Published As

Publication number Publication date
CN109449102B (en) 2021-03-19
CN109449102A (en) 2019-03-08

Similar Documents

Publication Publication Date Title
WO2020093909A1 (en) Drive substrate manufacturing method, drive substrate, display panel and display device
TWI774713B (en) Method for fabricating integrated micro led display
US9484332B2 (en) Micro solar cell powered micro LED display
US10312405B2 (en) Systems and methods for preparing GaN and related materials for micro assembly
KR102560977B1 (en) Light-emitting panels and methods for manufacturing such light-emitting panels
TWI605546B (en) Method of manufacturing semiconductor device array
US11276603B2 (en) Transfer method using deformable film
US11670533B2 (en) Multi-level micro-device tethers
WO2018032621A1 (en) Micro component transfer method and apparatus, and electronic device
TW201626542A (en) Compound micro-assembly strategies and devices
US20200052164A1 (en) Flexible devices and methods using laser lift-off
CN113169257A (en) LED display module, method of manufacturing LED display module, and display apparatus including LED display module
CN110391165B (en) Transfer carrier and die carrier
Ou et al. P‐125: Monochromatic Active Matrix Micro‐LED Micro‐displays with> 5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process
WO2014071879A1 (en) Method for separating light emitting diode substrate
JP2023123546A (en) Led transfer method and method of manufacturing display devices using the same
KR20210058536A (en) Manufacturing method of display apparatus and display apparatus manufactured by that method
US20230068911A1 (en) Laser Lift-Off Processing System Including Metal Grid
KR102346172B1 (en) Manufacturing method of display apparatus and display apparatus manufactured by that method
US20220077223A1 (en) Processes, articles and apparatus that incorporate semiconductor switches and drive circuitry on compound semiconductor chiplets
KR20210084011A (en) transfer method of discrete devices using anchor
KR20210003542A (en) Method of manufacturing display for mass production using wafer level transfer and large area display

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19881071

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19881071

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 27-08-2021)

122 Ep: pct application non-entry in european phase

Ref document number: 19881071

Country of ref document: EP

Kind code of ref document: A1