WO2020085372A1 - 導電性樹脂組成物および半導体装置 - Google Patents

導電性樹脂組成物および半導体装置 Download PDF

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Publication number
WO2020085372A1
WO2020085372A1 PCT/JP2019/041504 JP2019041504W WO2020085372A1 WO 2020085372 A1 WO2020085372 A1 WO 2020085372A1 JP 2019041504 W JP2019041504 W JP 2019041504W WO 2020085372 A1 WO2020085372 A1 WO 2020085372A1
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Prior art keywords
resin composition
conductive resin
particles
mass
composition according
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English (en)
French (fr)
Japanese (ja)
Inventor
孝一 玉野
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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Priority to CN201980070190.5A priority Critical patent/CN112912427B/zh
Priority to JP2020553425A priority patent/JPWO2020085372A1/ja
Publication of WO2020085372A1 publication Critical patent/WO2020085372A1/ja
Anticipated expiration legal-status Critical
Priority to JP2022075758A priority patent/JP7359252B2/ja
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/14—Peroxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/34—Heterocyclic compounds having nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to a conductive resin composition and a semiconductor device.
  • a conductive resin composition containing, for example, metal particles has been developed.
  • the main characteristics required for the conductive resin composition are conductivity and thermal conductivity.
  • Patent Document 1 describes that the plate-type silver fine particles can be sintered to improve the thermal conductivity as compared with the case where only ordinary silver powder is filled.
  • EBO epoxy bleed-out
  • the present invention has been made in view of such circumstances, and provides a conductive resin composition capable of improving peel strength when a semiconductor element is bonded to a metal frame surface-treated with an EBO inhibitor. provide.
  • Ag particles (A), a base resin (B), and a radical initiator (C) are contained, and the 10-hour half-life temperature of the radical initiator (C) is 100 ° C. or more and 120 ° C.
  • the following is provided for a conductive resin composition.
  • the present invention also provides a conductive resin composition containing Ag particles (A), a base resin (B), and a nitrogen-containing heterocyclic compound (E).
  • a semiconductor device having a cured product of the above-mentioned conductive resin composition.
  • the peel strength when a semiconductor element is bonded to a metal frame surface-treated with an EBO inhibitor can be improved.
  • the conductive resin composition described below is preferably used as a material for die-bonding a semiconductor element to a wiring member such as a lead frame surface-treated with an EBO inhibitor.
  • the conductive resin composition according to the first embodiment includes Ag particles (A), a base resin (B), and a radical initiator (C).
  • the 10-hour half-life temperature of the radical initiator (C) is 100 ° C. or higher and 120 ° C. or lower.
  • each component of the conductive resin composition of this embodiment will be described.
  • the content with respect to the entire conductive resin composition refers to the ratio of the mass of each component to the total mass of the components excluding the solvent described below.
  • the Ag particles (A) contained in the conductive resin composition of the present embodiment heat-treat the conductive resin composition to cause sintering and form a particle-connected structure. That is, in the cured product obtained by heating the conductive resin composition, the Ag particles (A) are present in a mutually fused state.
  • the cured product obtained by heating the conductive resin composition can have improved adhesion and conductivity to wiring members such as lead frames and semiconductor elements.
  • the Ag particles (A) contained in the conductive resin composition pierce the surface-treated layer composed of the EBO inhibitor to form a wiring member. Reach This makes it possible to improve the conductivity between the wiring member and the semiconductor element while suppressing EBO.
  • the shape of the Ag particles (A) is not particularly limited, but examples thereof include spherical shape, flake shape, and scale shape.
  • the Ag particles (A) include spherical particles.
  • the sinterability of the Ag particles (A) can be improved. It can also contribute to the improvement of the uniformity of sintering.
  • a mode in which the Ag particles (A) include flaky particles can be adopted.
  • the Ag particles (A) may contain both spherical particles and flake particles.
  • the Ag particles (A) may include 90% by mass or more and 100% by mass or less of the total Ag particles (A) including, for example, spherical particles and flake particles, and 95% by mass or more and 100% by mass. It is more preferable to include the following. Thereby, the uniformity of sintering can be improved more effectively. Further, from the viewpoint of further improving the uniformity of sintering, it is more preferable that the Ag particles (A) contain, for example, spherical particles in an amount of 90% by mass or more and 100% by mass or less of the entire Ag particles (A), and 95% by mass. It is more preferable that the content is 100% by mass or more and 100% by mass or less.
  • the particle size D 50 of the Ag particles (A) at the time of 50% accumulation in the volume-based cumulative distribution is preferably 0.8 ⁇ m or more, more preferably 1.0 ⁇ m or more, and further 1.2 ⁇ m or more. preferable.
  • the thermal conductivity can be improved.
  • the particle size D 50 of the Ag particles (A) at the time of 50% accumulation in the volume-based cumulative distribution is preferably 5.0 ⁇ m or less, more preferably 4.5 ⁇ m or less, still more preferably 4.0 ⁇ m or less.
  • the particle size D 50 of the Ag particles (A) is within the range consisting of the upper limit value and the lower limit value described above, it is possible to improve the thermal conductivity and further improve the uniformity of sintering. You can also The upper limit value and the lower limit value can be appropriately combined.
  • the particle size of the Ag particles (A) can be determined by performing particle image measurement using, for example, a flow type particle image analyzer FPIA (registered trademark) -3000 manufactured by Sysmex Corporation. More specifically, the particle size of the Ag particles (A) can be determined by measuring the volume-based median diameter using the above device. By adopting such a condition, for example, when a particle having a large particle size is present, its influence can be detected sensitively, and a particle having a narrow particle size distribution like the Ag particle (A) of the present embodiment can be detected. Even in this case, the measurement can be performed with high accuracy.
  • FPIA flow type particle image analyzer
  • the standard deviation of the particle size of Ag particles (A) is set to 2.0 ⁇ m or less.
  • the standard deviation of the particle size of the Ag particles (A) is preferably 1.9 ⁇ m or less, and more preferably 1.8 ⁇ m or less.
  • the lower limit of the standard deviation of the particle size of the Ag particles (A) is not particularly limited, but is, for example, 0.1 ⁇ m or more, and in consideration of the availability of the Ag particles (A) and the like, 0 It can also be set to 0.3 ⁇ m or more.
  • the above-mentioned standard deviation of the particle diameter of the Ag particles (A) is accumulated on a volume basis of the Ag particles (A).
  • the value divided by the particle size D 50 at 50% accumulation in the distribution is preferably 2.5 or less, more preferably 2.0 or less, and further preferably 1.8 or less.
  • the lower limit of the value obtained by dividing the standard deviation of the particle size of Ag particles (A) by the particle size D 50 at the time of 50% accumulation in the volume-based cumulative distribution of Ag particles (A) is not particularly limited. , For example, 0.1 or more.
  • the content of Ag particles (A) in the conductive resin composition is, for example, preferably 40% by mass or more, and more preferably 50% by mass or more, based on the entire conductive resin composition. This makes it possible to improve the sinterability of the Ag particles (A) and contribute to the improvement of thermal conductivity and conductivity.
  • the content of Ag particles (A) in the conductive resin composition is, for example, preferably 90% by mass or less, and more preferably 80% by mass or less, based on the entire conductive resin composition. . This can contribute to improvement in coating workability of the entire conductive resin composition and mechanical strength of a cured product obtained by heating the conductive resin composition.
  • the base resin (B) is at least one selected from the group consisting of acrylic resins and epoxy resins.
  • acrylic resin examples include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, tert-butyl (meth) acrylate, isobutyl (meth) acrylate, cyclohexyl (meth).
  • Homopolymers of one of (meth) acrylic monomers such as acrylate, 2-ethylhexyl (meth) acrylate, isobornyl (meth) acrylate, n-stearyl (meth) acrylate, benzyl (meth) acrylate, and 2 Examples include copolymers of one or more species.
  • the epoxy resin examples include a biphenyl type epoxy resin, a bisphenol type epoxy resin, a (meth) acrylic acid ester-based epoxy resin, an alicyclic epoxy resin, and a glycidyl ester-based epoxy resin, and one of these is used. Alternatively, two or more kinds can be used in combination.
  • the content of the base resin (B) contained in the conductive resin composition is, for example, preferably 3% by mass or more, and more preferably 5% by mass or more, based on the entire conductive resin composition. It is more preferably 8% by mass or more. This makes it possible to improve the uniformity of sintering more effectively. Further, it can also contribute to the improvement of mechanical strength and the like of a cured product obtained by heating the conductive resin composition.
  • the content of the base resin (B) contained in the conductive resin composition is, for example, preferably 60% by mass or less, and 55% by mass or less with respect to the entire conductive resin composition. More preferably, it is still more preferably 50% by mass or less. This makes it possible to contribute to improving the sinterability of the Ag particles (A).
  • the content of the base resin (B) contained in the conductive resin composition is within the range consisting of the upper limit value and the lower limit value described above, the uniformity of sintering can be more effectively improved. At the same time, it can also contribute to improving the sinterability of the Ag particles (A).
  • the upper limit value and the lower limit value can be appropriately combined.
  • Radar initiator (C) As the radical initiator (C), one that accelerates the polymerization reaction of the base resin (B) can be used. This can contribute to improving the mechanical properties of the cured product obtained using the conductive resin composition.
  • the 10-hour half-life temperature of the radical initiator (C) is 100 ° C or higher and 120 ° C or lower.
  • the 10-hour half-life temperature of the radical initiator (C) is 100 ° C. or higher
  • the surface of the wiring member such as the lead frame is covered before the radical initiator (C) decomposes when the conductive resin composition is heated.
  • the EBO inhibitor to be dissolved easily, the adhesiveness between the conductive resin composition and the EBO inhibitor is improved, and the peel strength between the semiconductor element and the metal frame is improved, and the Ag particles in the conductive resin composition are improved.
  • (A) easily penetrates the surface treatment layer made of the EBO inhibitor to reach the wiring member.
  • the 10-hour half-life temperature of the radical initiator (C) is 120 ° C. or lower, the time until curing can be shortened, and the uncured resin component is reduced, so that the peel strength between the semiconductor element and the metal frame is reduced. improves
  • radical initiator (C) having such a 10-hour half-life temperature
  • examples of the radical initiator (C) having such a 10-hour half-life temperature include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxyesters, peroxy. At least one selected from the group consisting of dicarbonates can be mentioned.
  • Examples of ketone peroxides include methyl ethyl ketone peroxide (10-hour half-life temperature: 110 ° C).
  • Examples of the peroxyketals include n-butyl 4,4-di- (t-butylperoxy) valerate (10-hour half-life temperature: 100 ° C.) and the like.
  • Examples of hydroperoxides include p-Menthane hydroperoxide (10-hour half-life temperature: 120 ° C.).
  • Examples of the dialkyl peroxides include di- ⁇ -cumyl peroxide (10-hour half-life temperature: 120 ° C.).
  • Examples of peroxyesters include t-Butyl peroxybenzoate (10-hour half-life temperature: 100 ° C.) and the like.
  • the content of the radical initiator (C) contained in the conductive resin composition can be, for example, 25 parts by mass or less with respect to 100 parts by mass of the base resin (B). Moreover, the content of the radical initiator (C) contained in the conductive resin composition can be more than 0 parts by mass with respect to 100 parts by mass of the base resin (B). From the viewpoint of improving the mechanical properties of the cured product obtained by heating the conductive resin composition, for example, the content of the radical initiator (C) relative to 100 parts by mass of the base resin (B) is 0.1 parts by mass or more. Can be
  • the conductive resin composition according to this embodiment may include, for example, a solvent. This can improve the fluidity of the conductive resin composition and contribute to the improvement of workability.
  • the solvent is not particularly limited, for example, ethyl alcohol, propyl alcohol, butyl alcohol, pentyl alcohol, hexyl alcohol, heptyl alcohol, octyl alcohol, nonyl alcohol, decyl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono Propyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, methyl methoxybutanol, ⁇ -terpineol, ⁇ -terpineol, hexylene glycol, benzyl alcohol, 2 -Phenylethyl alcohol, Iso Alcohols such as palmityl alcohol, isostearyl alcohol, lauryl alcohol, ethylene glycol, propylene glycol or glycerin; acetone
  • the adhesion between the wiring member and the semiconductor element in other words, And chip peel strength can be improved.
  • the conductivity between the wiring member and the semiconductor element can be improved, and the EBO inhibitor can prevent the base resin (B) contained in the conductive resin composition from oozing out.
  • the conductive resin composition according to the present embodiment has, in addition to the components (A), (B) and (C) described above, It may contain a monomer (D) and / or a nitrogen-containing heterocyclic compound (E).
  • the monomer (D) contained in the conductive resin composition of the present embodiment is at least one selected from the group consisting of acrylic monomers, (meth) acrylic monomers and conjugated olefins.
  • acrylic monomers include 1,4-cyclohexanedimethanol monoacrylate, 1.6 hexanediol dimethacrylate, and 2-phenoxyethyl methacrylate.
  • Examples of the (meth) acrylic monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, tert-butyl (meth) acrylate, isobutyl (meth) acrylate, cyclohexyl ( Examples thereof include (meth) acrylate, 2-ethylhexyl (meth) acrylate, isobornyl (meth) acrylate, n-stearyl (meth) acrylate, and benzyl (meth) acrylate.
  • conjugated olefin examples include butadiene, isoprene, piperylene, 1,4-dimethylbutadiene, trans-2-methyl-1,3-pentadiene, 1,2-dimethylenecyclohexane and cyclopentadiene.
  • the content of the monomer (D) contained in the conductive resin composition of the present embodiment is preferably 2% by mass or more and more preferably 4% by mass or more with respect to the entire conductive resin composition. It is preferably 6% by mass or more, and more preferably 6% by mass or more.
  • the content of the monomer (D) contained in the conductive resin composition is preferably 25% by mass or less, more preferably 20% by mass or less, based on the entire conductive resin composition. It is more preferably 15% by mass or less.
  • the nitrogen-containing heterocyclic compound (E) contained in the conductive resin composition of the present embodiment is at least one selected from the group consisting of triazine, triazole, isocyanuric acid, and derivatives thereof.
  • isocyanuric acid derivatives include tris (2-hydroxyethyl) isocyanurate triacrylate.
  • the content of the nitrogen-containing heterocyclic compound (E) contained in the conductive resin composition of the present embodiment is preferably 0.05% by mass or more based on the entire conductive resin composition, and is 0.10. It is more preferably at least mass%, and even more preferably at least 0.15 mass%.
  • the content of the nitrogen-containing heterocyclic compound (E) contained in the conductive resin composition is preferably 5% by mass or less, and preferably 3% by mass or less, based on the entire conductive resin composition. Is more preferable and 1% by mass or less is further preferable.
  • the conductive resin composition according to the second embodiment contains Ag particles (A), a base resin (B), and a monomer (D).
  • the Ag particles (A) and the base resin (B) of this embodiment are the same as those of the first embodiment.
  • the conductive resin composition of this embodiment may contain a solvent as in the first embodiment.
  • the content of the monomer (D) contained in the conductive resin composition of the present embodiment is preferably 2% by mass or more and more preferably 4% by mass or more with respect to the entire conductive resin composition. It is preferably 6% by mass or more, and more preferably 6% by mass or more.
  • the content of the monomer (D) contained in the conductive resin composition is preferably 25% by mass or less, more preferably 20% by mass or less, based on the entire conductive resin composition. It is more preferably 15% by mass or less.
  • the conductive resin composition according to the third embodiment includes Ag particles (A), a base resin (B), and a nitrogen-containing heterocyclic compound (E).
  • the Ag particles (A) and the base resin (B) of this embodiment are the same as those of the first embodiment.
  • the conductive resin composition of this embodiment may contain a solvent as in the first embodiment.
  • a configuration different from that of the first embodiment will be described. In the present embodiment, by including the Ag particles (A), the base resin (B), and the nitrogen-containing heterocyclic compound (E) in combination,
  • the content of the nitrogen-containing heterocyclic compound (E) contained in the conductive resin composition of the present embodiment is preferably 0.05% by mass or more based on the entire conductive resin composition, and is 0.10. It is more preferably at least mass%, and even more preferably at least 0.15 mass%. Further, the content of the nitrogen-containing heterocyclic compound (E) contained in the conductive resin composition is preferably 5% by mass or less, and preferably 3% by mass or less, based on the entire conductive resin composition. Is more preferable and 1% by mass or less is further preferable.
  • the upper limit value and the lower limit value can be appropriately combined. According to the conductive resin composition of the present embodiment, while obtaining the same effects as in Embodiment 1, the effect of the nitrogen-containing heterocyclic compound (E) further improves the adhesion to the wiring member and the semiconductor element. be able to.
  • FIG. 1 is a sectional view showing a semiconductor device 100 according to the embodiment.
  • the semiconductor device 100 according to the present embodiment is provided on the base material 30 via the base material 30 and an adhesive layer (die attach layer 10) composed of a cured product obtained by heat-treating the above-mentioned conductive resin composition.
  • a semiconductor element 20 mounted on the.
  • the semiconductor element 20 and the base material 30 are electrically connected, for example, via a bonding wire 40 or the like.
  • the semiconductor element 20 is sealed with, for example, the sealing resin 50.
  • the film thickness of the die attach layer 10 is not particularly limited, but is, for example, 5 ⁇ m or more and 100 ⁇ m or less.
  • the base material 30 is, for example, a lead frame.
  • the semiconductor element 20 will be mounted on the die pad 32 (30) via the die attach layer 10.
  • the surface of the die pad 32 (30) is subjected to a surface treatment with an EBO inhibitor, and the sintered silver particles in the die attach layer 10 penetrate the EBO inhibitor and reach the surface of the die pad 32 (30).
  • the EBO inhibitor is not particularly limited, and commercially available products that are generally distributed are used.
  • the semiconductor element 20 is electrically connected to the outer lead 34 (30) via the bonding wire 40, for example.
  • the base material 30 which is a lead frame is composed of, for example, a 42 alloy and a Cu frame.
  • the base material 30 may be an organic substrate or a ceramic substrate.
  • As the organic substrate for example, a substrate known to those skilled in the art to which an epoxy resin, a cyanate resin, a maleimide resin or the like is applied is suitable.
  • the planar shape of the semiconductor element 20 is not particularly limited, but is, for example, a rectangle.
  • a rectangular semiconductor element 20 having a chip size of 0.5 mm square to 15 mm square can be used.
  • the conductivity is improved and the base resin in the conductive resin composition is exuded. It is possible to improve the adhesion between the semiconductor element 20 and the die pad 32 (30) while suppressing the above.
  • Conductive resin compositions were prepared for Examples 1 to 3 and Comparative Example 1. This preparation was performed by mixing the components according to the formulation shown in Table 1, stirring the mixture using a three-roll mill, and then performing defoaming treatment at 2 mmHg for 30 minutes. The details of the components shown in Table 1 are as follows.
  • Ag particles 1 Ag-DSB-114, manufactured by DOWA Hitech, D 50 : 0.7 ⁇ m
  • Base resin (B) Base resin 1: An acrylic polymer solution was prepared by the following procedure. 4.4 parts by mass of UG4035 (manufactured by Toagosei Co., Ltd.) and 4.4 parts by mass of light ester PO (manufactured by Kyoeisha Chemical Co., Ltd.) were heated to 100 ° C. and stirred to obtain a uniform solution.
  • Base resin 2 modified polybutadiene (RICOBOND1731, manufactured by Cray Valley)
  • Base resin 3 Allyl polymer (SBM-8C03, manufactured by Kanto Chemical Co., Inc.)
  • Monomer (D) Monomer 1: Phenoxyethyl methacrylate (light ester PO, Kyoeisha Chemical Co., Ltd.)
  • Monomer 2 1,6-hexanediol dimethacrylate (light ester 1, 6 Hex, Kyoeisha Chemical Co., Ltd.)
  • Monomer 3 1,4-Cyclohexanedimethanol monoacrylate (CHDMMA, manufactured by Nippon Kasei Co., Ltd.)
  • Nitrogen-containing heterocyclic compound 1 tris (2-hydroxyethyl) isocyanurate triacrylate (SR-368, manufactured by Arkema Inc.)
  • Radical initiator (C) Radical initiator 1: Perhexa C (s), manufactured by NOF CORPORATION (10-hour half-life temperature: 91 ° C., 1,1-di (t-butylperoxy) cyclohexane)
  • Radical Initiator 2 Percadox BC, manufactured by Kayaku Akzo Co., Ltd. (10-hour half-life temperature: 117 ° C., di- ⁇ -cumylpa-oxide)
  • FIG. 2 is a schematic diagram showing a method for measuring chip peel strength.
  • the semiconductor chip 220 is bonded to the copper frame 200 surface-treated with the Anti-EBO agent via the conductive resin composition 210.
  • the jig 230 was pressed against the side surface of the semiconductor chip 220, and a force was applied in the arrow direction shown in FIG. 2 to obtain the chip peel strength. The obtained results are shown in Table 2.

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  • Polymers & Plastics (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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  • Macromonomer-Based Addition Polymer (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Polymerisation Methods In General (AREA)
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