WO2020066114A1 - スパッタリングターゲット及びスパッタリングターゲットを製造するための粉体 - Google Patents

スパッタリングターゲット及びスパッタリングターゲットを製造するための粉体 Download PDF

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WO2020066114A1
WO2020066114A1 PCT/JP2019/019571 JP2019019571W WO2020066114A1 WO 2020066114 A1 WO2020066114 A1 WO 2020066114A1 JP 2019019571 W JP2019019571 W JP 2019019571W WO 2020066114 A1 WO2020066114 A1 WO 2020066114A1
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Prior art keywords
sputtering target
powder
composite oxide
boron
melting point
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PCT/JP2019/019571
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English (en)
French (fr)
Japanese (ja)
Inventor
靖幸 岩淵
佐藤　敦
彰 下宿
清水　正義
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Ｊｘ金属株式会社
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Priority to MYPI2021001557A priority Critical patent/MY197929A/en
Priority to SG11202102759VA priority patent/SG11202102759VA/en
Priority to CN201980060775.9A priority patent/CN112739846A/zh
Priority to JP2020547948A priority patent/JP7072664B2/ja
Publication of WO2020066114A1 publication Critical patent/WO2020066114A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12—Metallic powder containing non-metallic particles
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers

Definitions

  • the present disclosure relates to a sputtering target and a powder for producing the sputtering target. More specifically, the present invention relates to a sputtering target containing Ru and a powder for producing the sputtering target.
  • materials based on ferromagnetic metals such as Co, Fe, or Ni are used as materials for magnetic thin films for recording.
  • ferromagnetic metals such as Co, Fe, or Ni
  • a Co—Cr-based or Co—Cr—Pt-based ferromagnetic alloy containing Co as a main component has been used for a recording layer of a hard disk employing an in-plane magnetic recording system.
  • Patent Document 1 discloses an underlayer of a Ru—xCoO alloy. Further, in Patent Document 1, a crystal grain boundary is formed by an oxide in the second underlayer 150b, which promotes the separation between particles and the crystal orientation of Ru constituting the underlayer 150 and the main recording layer 160. It is disclosed that it also has the effect of improving
  • Patent Document 2 discloses a perpendicular magnetic recording medium including a nonmagnetic intermediate layer and a magnetic layer.
  • Patent Document 2 discloses Ru as a first nonmagnetic intermediate layer and a CoCr alloy as a second nonmagnetic intermediate layer.
  • Patent Document 3 a perpendicular magnetic layer in which at least a first magnetic layer and a second magnetic layer are alternately laminated on a non-magnetic substrate is provided via a base layer.
  • a recording medium is disclosed.
  • Patent Document 3 discloses that the underlayer is made of Ru containing oxygen.
  • Patent Document 4 discloses a sputtering target capable of forming a Ru film or a Ru oxide thin film having a small specific resistance when used as an electrode and having high adhesion to a base such as a plug or a barrier metal.
  • the intermediate layer below the magnetic recording layer plays an important role in improving the separability. If Ru crystal grains exist in the intermediate layer, the crystal grains of the magnetic recording layer grow starting from the Ru crystal grains. Further, when Ru oxide and Ru—B are used as the intermediate layer, the magnetic recording characteristics are improved. Based on these findings, the present inventors have studied combinations of Ru and boron oxide. The purpose of this is to obtain a structure in which boron oxide is arranged around Ru crystal grains.
  • a method of co-sputtering Ru and boron oxide is also conceivable, a single sputtering target containing both is advantageous in terms of a manufacturing process.
  • an object of the present disclosure is to provide a sputtering target containing Ru and boron oxide.
  • the present inventors have further studied and found that when a specific composite boron oxide is used instead of B 2 O 3 , boron remains in the sintered body. It is considered that the reason for this remaining is that the use of boron oxide having a higher melting point than B 2 O 3 could reduce the amount lost during the HP and / or HIP treatment.
  • the present invention has been completed based on the above findings, and in one aspect, includes the following inventions.
  • (Invention 1) A sputtering target containing Ru as a main component and having a melting point higher than that of B 2 O 3 and containing a composite oxide containing boron.
  • (Invention 2) The sputtering target according to the first aspect, wherein the content of B is 0.01 wt% or more.
  • (Invention 3) The sputtering target according to the invention 1 or 2, wherein the relative density is 90% or more.
  • (Invention 4) The sputtering target according to any one of Inventions 1 to 3, further comprising at least one selected from Co, Cr, Mn, and Ti as a constituent element in addition to Ru, B, and O. target.
  • (Invention 5) The sputtering target according to any one of Inventions 1 to 4, wherein the melting point of the composite oxide is 750 ° C. or higher.
  • (Invention 6) The sputtering target according to any one of Inventions 1 to 5, wherein the composite oxide is selected from the group consisting of Co 2 B 2 O 5 , CrBO 3 , TiBO 3 and Mn 3 B 2 O 6. The target that is at least species.
  • (Invention 7) A powder of a composite oxide for use in manufacturing a sputtering target, wherein the composite oxide is a composite oxide having a melting point higher than that of B 2 O 3 and containing boron.
  • invention 8 The powder according to claim 7, wherein the melting point of the composite oxide is 750 ° C or more.
  • invention 9 The powder according to invention 7 or 8, wherein the composite oxide is at least one selected from the group consisting of Co 2 B 2 O 5 , CrBO 3 , TiBO 3 and Mn 3 B 2 O 6. , The powder.
  • invention 10 The powder according to any one of inventions 7 to 9, wherein the powder has a specific surface area of 0.5 to 80 m 2 / g, a particle size of 0.3 to 15 ⁇ m, and / or a concentration as an impurity.
  • the powder having a content of 10,000 wtppm or less.
  • the sputtering target of the present disclosure includes Ru and B. This eliminates the need for co-sputtering, which is advantageous in the manufacturing process.
  • FIG. 4 is a SEM photograph of a target manufactured using Ru powder and Co 2 B 2 O 5 powder in one embodiment. The squares represent a portion of the oxide analyzed by EDS.
  • the present disclosure relates to a sputtering target.
  • the sputtering target contains at least Ru and a composite oxide.
  • Ru is a main component of the sputtering target.
  • the main component means an element having the largest content (at%) among the metal elements. Typically, the main component may mean 50 at% or more.
  • the composite oxide is a compound containing boron and having a higher melting point than B 2 O 3 .
  • B more B can be left in the sintered body than in a case where a sputtering target is manufactured using B 2 O 3 . Therefore, the crystal separability of Ru after sputtering is improved.
  • the Ru content may be 80.0-99.8 wt%.
  • the content is 80.0 wt% or more, Ru crystal grains necessary for growing the crystal grains of the recording layer can be sufficiently secured in the intermediate layer after film formation.
  • the content is 99.8 wt% or less, a sufficient B content for separating Ru crystal grains can be secured in the intermediate layer after film formation.
  • the lower limit of the Ru content is preferably at least 90.0 wt%, more preferably at least 95 wt%.
  • the upper limit of the Ru content is preferably 99.5 wt% or less, more preferably 99.0 wt% or less.
  • the content of B is 0.01 wt% or more.
  • the upper limit of the B content is not particularly limited, but may be typically 3.0 wt% or less from the viewpoint of maintaining the characteristics of Ru.
  • the lower limit of the B content is preferably 0.05 wt% or more, and more preferably 0.15 wt% or more.
  • the sputtering target may include one or more selected from Co, Cr, Mn, and Ti. These elements can form a complex oxide with B. Further, the composite oxide has a higher melting point than B 2 O 3 . Therefore, there is a low possibility of melting and loss due to heat treatment (eg, HIP, HP, etc.) during manufacturing.
  • heat treatment eg, HIP, HP, etc.
  • the content of one or more elements selected from Co, Cr, Mn, and Ti is not particularly limited, but is preferably a content according to a stoichiometric ratio for forming a composite oxide with B.
  • the content of O is not particularly limited, but is preferably a content according to a stoichiometric ratio for forming a composite oxide with B.
  • the composite oxide is Co 2 B 2 O 5
  • Co is 53.70 wt%
  • B is 9.85 wt%
  • O is 36.45 wt%.
  • the weight of the entire sputtering target is 100% and the content of B in the entire sputtering target is 0.01 wt% or more
  • Co is 0.054 wt% or more
  • O is 0.036 wt% or more.
  • the sputtering target may be composed of the following elements: Ru; B; O, one or more selected from Co, Cr, Mn, and Ti;
  • the sputtering target may contain unavoidable impurities in addition to the elements described above.
  • the content as an inevitable impurity is 10,000 wtppm or less, preferably 5000 wtppm or less (the total amount of all the inevitable impurity elements).
  • Elemental analysis (and quantification) of the sputtering target can be performed by a method known in the art. For example, it can be performed by the following method.
  • the sputtering target itself or the scraps of the sintered body (the surplus pieces when processing into the shape of the sputtering target) can be used as the sample.
  • a sample of about 5 g collected from a location as close to the center of the sputtering target as possible is powdered.
  • O, N, and C can be measured using an infrared absorption method (TC600 manufactured by LECO) after heating and gasifying the powder.
  • the powder is dissolved with an acid or the like and analyzed using an ICP emission spectrometer (SPS3100HV manufactured by Hitachi High-Tech Science).
  • the constituent elements may be analyzed by EDS (S-3700N manufactured by Hitachi High-Technologies Corporation) or EPMA (JXA-8500F manufactured by JEOL Ltd.).
  • the complex oxide containing boron in the sputtering target includes a complex oxide composed of B, O, and a metal element.
  • the reason for using such a composite oxide is that it has a higher melting point than B 2 O 3 described above, and is less likely to be lost by heat treatment. More preferably, the melting point of the composite oxide containing boron may be 750 ° C. or higher (preferably 1000 ° C. or higher).
  • the upper limit is not particularly limited, but is typically 1300 ° C. or lower.
  • the metal element constituting the composite oxide containing boron preferably includes, but is not limited to, one or more selected from Co, Cr, Mn, and Ti.
  • the reason why these metal elements are preferable is that it is unlikely to adversely affect the crystallinity of Ru.
  • Co has the same hcp crystal structure as Ru, it does not affect the crystallinity of Ru.
  • Cr, Ti, and Mn are rich in Ru, they do not react with Ru and do not affect the crystallinity of Ru.
  • boron-containing composite oxide examples include, but are not limited to, one or more selected from the group consisting of Co 2 B 2 O 5 , CrBO 3 , TiBO 3 and Mn 3 B 2 O 6 .
  • the relative density of the sputtering target may be 90% or more, preferably 98% or more. Thereby, the occurrence of arcing is further suppressed.
  • the relative density referred to in the present specification indicates a ratio between the measured density and the theoretical density.
  • the measured density refers to a value measured by the Archimedes method using pure water as a solvent.
  • the theoretical density is obtained by multiplying each of the elementary densities of the raw materials by the mixing mass ratio and summing up the obtained values.
  • Theoretical density ⁇ (theoretical density of component n ⁇ mixing mass ratio) ⁇
  • the present disclosure relates to powders for manufacturing sputtering targets, and uses of the powders.
  • the component of the powder is a composite oxide containing boron.
  • the melting point of the composite oxide containing boron is 750 ° C. or higher (more preferably, 1000 ° C. or higher).
  • the upper limit is not particularly limited, but is typically 1300 ° C. or lower.
  • the metal element constituting the composite oxide containing boron in the powder includes, but is not limited to, one or more selected from Co, Cr, Mn, and Ti.
  • Specific examples of the boron-containing composite oxide include, but are not limited to, one or more selected from the group consisting of Co 2 B 2 O 5 , CrBO 3 , TiBO 3, and Mn 3 B 2 O 6. Not done.
  • the powder may have a particle size D50 of 0.3 to 15 ⁇ m. With these sizes, a high-quality sputtering target can be manufactured.
  • the lower limit of D50 is preferably 0.8 ⁇ m or more, and more preferably 1.0 ⁇ m or more.
  • the upper limit of D50 is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less.
  • the particle size of the powder means a particle size at an integrated value of 50% (D50) based on a volume value in a particle size distribution obtained by a laser diffraction / scattering method.
  • the particle size can be measured by dispersing the powder in a solvent of ethanol using a particle size distribution analyzer of model LA-920 manufactured by HORIBA.
  • the powder has a low impurity concentration.
  • impurities include Ti (only in the case of a composite oxide of Co, Cr, or Mn), Al, N, and C. Their total concentration may be up to 10,000 wtppm, preferably up to 5000 wtppm.
  • the impurity concentration can be analyzed using the above-described infrared absorption method, ICP emission spectrometer, GDMS (glow discharge mass spectrometry), or the like.
  • the specific surface area of the powder may be from 0.5 to 80 m 2 / g. With these specific surface areas, a high-quality sputtering target can be manufactured.
  • the lower limit of the specific surface area is preferably at least 0.8 m 2 / g, more preferably at least 1.5 m 2 / g.
  • the upper limit of the specific surface area is preferably 50 m 2 / g or less, more preferably 35 m 2 / g or less.
  • the specific surface area indicates a value measured by the following procedure: Degassing of the target substance at 200 ° C. for 2 hours. Measurement by BET method (one-point method) using Monosorb made by Cantachrome Co., using a mixed gas of 70 at% of He and 230 at% of N as an adsorption gas.
  • the manufacturing method the first composite oxide powder containing boron is prepared Co, Cr, and powder of oxides comprising an oxide and B containing at least one of Ti and Mn. Commercially available products may be used for these powders. These powders are produced by mixing and then performing a heat treatment at a temperature equal to or lower than the melting point. Further, a pulverizing step can be performed after the synthesis in order to obtain a powder suitable for manufacturing a sputtering target.
  • the method of mixing and pulverizing is not particularly limited, and a known means such as mortar mixing and a ball mill may be used.
  • the heat treatment step may use a known means.
  • the present disclosure relates to a method for manufacturing a sputtering target.
  • the method includes at least the following steps. -Step of mixing Ru powder and powder of a complex oxide containing boron-Step of pressure-sintering the mixed powder
  • a powder of composite oxide containing Ru powder and boron A commercially available Ru powder may be used.
  • a powder suitable for manufacturing a sputtering target is used (for example, low impurities).
  • a composite oxide containing boron having a melting point of 750 ° C. or more preferably 1000 ° C. or more may be used.
  • the method of mixing both is not particularly limited, and a known means such as mortar mixing and a ball mill may be used.
  • the above mixed powder can be filled in a mold or the like and sintered.
  • a pressing method at the time of sintering hot pressing (HP) and / or hot isostatic pressing (HIP) may, for example, be mentioned.
  • the processing temperature during hot pressing may be 750 to 1200 ° C.
  • the lower limit of the processing temperature may be preferably 900 ° C. or higher.
  • the upper limit of the processing temperature may be preferably 1100 ° C. or less.
  • the holding pressure during sintering is preferably in a pressure range of 150 kgf / cm 2 or more.
  • the processing temperature during hot isostatic pressing may be 750 to 1200 ° C.
  • the lower limit of the processing temperature may be preferably 900 ° C. or higher.
  • the upper limit of the processing temperature may be preferably 1100 ° C. or less.
  • the holding pressure during sintering is preferably in a pressure range of 1000 kgf / cm 2 or more.
  • machining may be further performed to finish it into a desired shape.
  • sputtering target 4-1 Film formation A film can be formed using the sputtering target obtained in the above step.
  • the conditions for sputtering may be those known in the art, and are typically as follows.
  • An intermediate layer for a magnetic recording layer can be formed by sputtering under the above conditions.
  • a magnetic recording medium can be manufactured. For example, it can be manufactured by the following procedure. First, a substrate is prepared. A layer containing NiW or NiFeW as a component is formed on a substrate. Next, a pure Ru layer is formed on the NiW layer or the NiFeW layer. Then, by sputtering using the above-described sputtering target, a layer composed of Ru and a composite oxide containing boron can be formed as an intermediate layer. Then, a magnetic recording layer is formed on the intermediate layer.
  • layers known in the art such as a protective layer and a lubricating layer, can be provided.
  • a protective layer and a lubricating layer can be provided below the NiW layer.
  • an adhesion layer mainly composed of CrTi or NiTa an adhesion layer mainly composed of CrTi or NiTa, a soft magnetic layer mainly composed of FeCoTa, FeCoNb, FeCoMo, etc., and a Ru layer which promotes antiferromagnetic coupling between the soft magnetic layers And other layers known in the art.
  • the unevenness of Ru and the recording layer interface is relatively small, the magnetic separation between the magnetic particles of the recording layer is good, and the magnetic anisotropy of the magnetic particles is increased. Therefore, the recording density of the HDD using the same can be improved.
  • Example 5-1 Production of Sputtering Target Ruthenium powder (purity 99.9 wt%) and a composite oxide powder containing boron (purity 99 wt%) were prepared. Regarding the composite oxide containing boron, four types of Co 2 B 2 O 5 , CrBO 3 , TiBO 3 , and Mn 3 B 2 O 6 (Examples 1 to 4), and B 2 O 3 (Comparative Example) was prepared. The ruthenium powder and the boron-containing composite oxide powder were mixed such that the content of the boron-containing composite oxide became “B target composition value wt%” shown in Table 1. Next, the mixture was filled in a carbon mold and hot pressed.
  • the hot pressing conditions were an Ar atmosphere, a sintering temperature of 1000 ° C., a sintering pressure of 300 kg / cm 2 , and a sintering time of 2 hours.
  • the sintered body removed from the hot press mold was subjected to hot isostatic sintering (HIP).
  • the conditions of the hot isostatic sintering were a holding temperature of 1100 ° C. and a holding time of 2 hours.
  • the gas pressure of Ar gas was gradually increased from the start of the temperature increase, and the pressure was increased at 1500 kgf / cm 2 during the holding at 1100 ° C. .
  • the obtained sintered body was cut into desired dimensions to obtain a disk-shaped sputtering target.
  • a sputtering target was obtained by using only ruthenium powder (purity: 99.9 wt%) under the same conditions as described above (Reference Example).
  • Example 1 the sputtering target was manufactured by mixing the B content to be 0.55 wt%.
  • the B content in the resulting sputtering target was 0.49 wt%. Therefore, it was shown that B remained even after hot pressing and hot isostatic sintering. Examples 2 to 4 showed the same tendency.
  • Example 1 Co, B, and O were detected in the same section. Therefore, it was shown that a composite oxide of Co 2 B 2 O 5 was present. Similarly, in Examples 2 to 4, it was shown that desired composite oxides (CrBO 3 , TiBO 3 and Mn 3 B 2 O 6 ) were present.

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PCT/JP2019/019571 2018-09-25 2019-05-16 スパッタリングターゲット及びスパッタリングターゲットを製造するための粉体 WO2020066114A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
MYPI2021001557A MY197929A (en) 2018-09-25 2019-05-16 Sputtering target and powder for producing sputtering target
SG11202102759VA SG11202102759VA (en) 2018-09-25 2019-05-16 Sputtering target and powder for producing sputtering target
CN201980060775.9A CN112739846A (zh) 2018-09-25 2019-05-16 溅射靶以及用于制造溅射靶的粉体
JP2020547948A JP7072664B2 (ja) 2018-09-25 2019-05-16 スパッタリングターゲット及びスパッタリングターゲットの製造方法

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JP2018-178381 2018-09-25
JP2018178381 2018-09-25

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JP (1) JP7072664B2 (zh)
CN (1) CN112739846A (zh)
MY (1) MY197929A (zh)
SG (1) SG11202102759VA (zh)
TW (1) TWI727334B (zh)
WO (1) WO2020066114A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006283054A (ja) * 2005-03-31 2006-10-19 Hoya Corp スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法
JP2008101246A (ja) * 2006-10-19 2008-05-01 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクを製造する際に使用されるスパッタリングターゲット
JP2010514921A (ja) * 2007-07-17 2010-05-06 ウィリアムズ アドバンスト マテリアルズ インコーポレイティド スパッタリングターゲット修復用の方法
WO2014178310A1 (ja) * 2013-04-30 2014-11-06 Jx日鉱日石金属株式会社 焼結体、同焼結体からなる磁気記録膜形成用スパッタリングターゲット
JP2015155573A (ja) * 2014-01-17 2015-08-27 Jx日鉱日石金属株式会社 磁性記録媒体用スパッタリングターゲット
WO2016013334A1 (ja) * 2014-07-25 2016-01-28 Jx日鉱日石金属株式会社 磁性体薄膜形成用スパッタリングターゲット
WO2016035415A1 (ja) * 2014-09-04 2016-03-10 Ｊｘ金属株式会社 スパッタリングターゲット
WO2018123500A1 (ja) * 2016-12-28 2018-07-05 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186471B2 (en) * 2002-02-28 2007-03-06 Seagate Technology Llc Chemically ordered, cobalt-three platinum alloys for magnetic recording
WO2006134743A1 (ja) * 2005-06-16 2006-12-21 Nippon Mining & Metals Co., Ltd. ルテニウム合金スパッタリングターゲット
JP6445126B2 (ja) * 2015-02-19 2018-12-26 Ｊｘ金属株式会社 磁性体薄膜形成用スパッタリングターゲット
TW201636444A (zh) * 2015-04-01 2016-10-16 光洋應用材料科技股份有限公司 釕基靶材及用於磁記錄媒體的中間膜

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006283054A (ja) * 2005-03-31 2006-10-19 Hoya Corp スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法
JP2008101246A (ja) * 2006-10-19 2008-05-01 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクを製造する際に使用されるスパッタリングターゲット
JP2010514921A (ja) * 2007-07-17 2010-05-06 ウィリアムズ アドバンスト マテリアルズ インコーポレイティド スパッタリングターゲット修復用の方法
WO2014178310A1 (ja) * 2013-04-30 2014-11-06 Jx日鉱日石金属株式会社 焼結体、同焼結体からなる磁気記録膜形成用スパッタリングターゲット
JP2015155573A (ja) * 2014-01-17 2015-08-27 Jx日鉱日石金属株式会社 磁性記録媒体用スパッタリングターゲット
WO2016013334A1 (ja) * 2014-07-25 2016-01-28 Jx日鉱日石金属株式会社 磁性体薄膜形成用スパッタリングターゲット
WO2016035415A1 (ja) * 2014-09-04 2016-03-10 Ｊｘ金属株式会社 スパッタリングターゲット
WO2018123500A1 (ja) * 2016-12-28 2018-07-05 Ｊｘ金属株式会社 磁性材スパッタリングターゲット及びその製造方法

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