WO2020062812A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置 Download PDF

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Publication number
WO2020062812A1
WO2020062812A1 PCT/CN2019/079691 CN2019079691W WO2020062812A1 WO 2020062812 A1 WO2020062812 A1 WO 2020062812A1 CN 2019079691 W CN2019079691 W CN 2019079691W WO 2020062812 A1 WO2020062812 A1 WO 2020062812A1
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Prior art keywords
light
layer
sub
emitting unit
light emitting
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Ceased
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PCT/CN2019/079691
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English (en)
French (fr)
Inventor
葛林
范文志
蔡世星
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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Priority to US16/836,373 priority Critical patent/US11228022B2/en
Publication of WO2020062812A1 publication Critical patent/WO2020062812A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present application relates to the field of display technology, for example, to a display panel and a display device.
  • Organic light-emitting diodes have self-luminous light-emitting characteristics and do not require a backlight. When applied to display panels and display devices, the overall thickness of the display panel and display device is thinner, which is conducive to the realization of display Lightweight design of panels and display devices. At the same time, organic light emitting diodes have the advantages of high display brightness, wide viewing angle, and fast response speed.
  • the current organic light emitting diode emits light (light emitting unit) with low intensity.
  • the light emitting unit is applied to a display panel and a display device, the overall display brightness of the display panel and the display device is low.
  • the present application provides a display panel and a display device to increase the light emitting intensity of the light emitting unit, thereby improving the display brightness of the display panel and the display device.
  • the present application provides a display panel including: a substrate; a plurality of light-emitting units arranged on one side of the substrate and arranged in an array, each light-emitting unit including a first sub-light-emitting unit and a second sub-light-emitting unit And the third sub-light emitting unit.
  • the light emitting unit includes a first electrode disposed near the substrate, a second electrode disposed opposite to the first electrode, and a second light emitting layer disposed between the first electrode and the second electrode.
  • At least the third sub-light emitting unit further includes at least one first light emitting layer, and the at least one first light emitting layer is located between the second light emitting layer and the first electrode.
  • At least one of the first sub-light emitting unit and the second sub-light emitting unit includes at least one first light emitting layer.
  • At least one of the number of layers of the first light-emitting layer in the first sub-light-emitting unit and the number of layers of the first light-emitting layer in the second sub-light-emitting unit is different from the number of layers.
  • the number of the first light-emitting layers in the third sub-light-emitting unit is equal.
  • a light-emitting wavelength of the first light-emitting layer is smaller than that of the second light-emitting layer; in the second sub-light-emitting unit, the first light-emitting layer The light emission wavelength of is smaller than the light emission wavelength of the second light emitting layer; in the third sub-light emitting unit, the light emission wavelength of the first light emitting layer is less than or equal to the light emission wavelength of the second light emitting layer.
  • the light emission color of the first light emitting layer is blue; the light emission color of the second light emitting layer in the first sub light emitting unit is red, and the light emission color of the second sub light emitting unit is The light-emitting color of the second light-emitting layer is green, and the light-emitting color of the second light-emitting layer in the third sub-light-emitting unit is blue.
  • the light emitting unit further includes a charge generating layer; the charge generating layer is located between the adjacent first light emitting layer and the second light emitting layer; when the layer of the first light emitting layer is When the number is at least two layers, the charge generation layer is also located between two adjacent first light emitting layers.
  • At least two of the charge generation layer in the first sub-light-emitting unit and the charge-generation layer in the second sub-light-emitting unit are continuous with the charge-generation layer in the third sub-light-emitting unit. Settings.
  • the thickness of the charge generation layer is expressed as A, and 10 nm ⁇ A ⁇ 30 nm.
  • the light emitting unit further includes a first carrier function layer and a second carrier function layer; the first carrier function layer is located on the first electrode and adjacent to the first electrode. Between the first light-emitting layer and between the first light-emitting layer and the charge-generating layer immediately adjacent to the first light-emitting layer and close to the first electrode, and between the second light-emitting layer and immediately adjacent Between the charge generating layers of the second light emitting layer.
  • the second carrier function layer is located between the second electrode and the second light-emitting layer, and is located between the first light-emitting layer and a region adjacent to the first light-emitting layer and close to the second electrode. The charge generation layer is described.
  • At least part of the first carrier functional layer in the first sub-light-emitting unit, and at least part of the first carrier in the second sub-light-emitting unit are continuously disposed.
  • At least part of the second carrier functional layer in the first sub-light-emitting unit, and at least part of the second carrier in the second sub-light-emitting unit are continuously disposed.
  • a carrier function layer and at least a part of the first carrier function layer in the third sub-light emitting unit are continuously disposed.
  • at least part of the second carrier functional layer in the first sub-light emitting unit, at least part of the second carrier functional layer in the second sub-light emitting unit, and at least part of the third The second carrier function layer in the sub-light emitting unit is continuously disposed.
  • the present application further provides a display device, which includes any one of the display panels provided by the present application.
  • FIG. 1 is a schematic diagram of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a light emitting unit provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of another light emitting unit according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 6 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 7 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 8 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 10 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 11 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 12 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 13 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 14 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • 15 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • 16 is a schematic diagram of still another light emitting unit according to an embodiment of the present application.
  • FIG. 17 is a schematic diagram of a display device according to an embodiment of the present application.
  • the display panel 10 includes: a substrate 11; a plurality of light-emitting units 12 disposed on one side of the substrate 11 and arranged in an array.
  • Each light emitting unit 12 includes a first sub light emitting unit 121, a second sub light emitting unit 122, and a third sub light emitting unit 123.
  • the light emitting unit 12 includes a first electrode 12L9 disposed near the substrate 11, a second electrode 12L8 disposed opposite the first electrode 12L9, and a second light emitting layer 12L2 disposed between the first electrode 12L9 and the second electrode 12L8.
  • At least the third sub-light emitting unit 123 further includes at least one first light emitting layer 12L1 (for example, a first light emitting layer 12L1 is shown in FIG. 2), and at least one first light emitting layer 12L1 is located on the second light emitting layer. Between 12L2 and the first electrode 12L9.
  • the substrate 11 may be a rigid substrate or a flexible substrate.
  • the rigid substrate may include glass and silicon wafer
  • the flexible substrate may include polyimide and stainless steel. This is merely an exemplary description and is not limited.
  • the substrate 11 may be another substrate known to those skilled in the art, which is not limited in the embodiment of the present application.
  • the first electrode 12L9 may be an anode.
  • the material of the first electrode 12L9 may be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium zinc oxide (IZO), or other high electrical conductivity and high work function known to those skilled in the art.
  • the work function is also called work function or work function, which refers to the work that must be done to overcome the surface barrier when the electrons escape.
  • the transparent conductive electrode material is not limited in the embodiments of the present application.
  • the second electrode 12L8 may be a cathode.
  • the material of the second electrode 12L8 may be a metal such as copper (Cu), aluminum (Al), gold (Au), silver (Ag), a metal alloy, or other low work function electrodes known to those skilled in the art. The materials are not limited in the examples of this application.
  • the material of the first light-emitting layer 12L1 and the second light-emitting layer 12L2 may be any material known to those skilled in the art, which is not limited in the embodiment of the present application.
  • the third sub-light-emitting unit 123 including at least one first light-emitting layer 12L1
  • a laminated light-emitting structure can be formed in the third sub-light-emitting unit 123, the light-emitting intensity of the light-emitting unit 12 can be increased, and the display panel 10 can be improved. Display brightness.
  • At least one of the first sub-light emitting unit 121 and the second sub-light emitting unit 122 includes at least one first light emitting layer 12L1.
  • FIG. 3 exemplarily shows that the second sub-light-emitting unit 122 and the third sub-light-emitting unit 123 each include a first light-emitting layer 12L1.
  • the first sub-light-emitting unit 121 and the third sub-light-emitting unit 123 may be further provided with a first light-emitting layer 12L1, respectively.
  • FIG. 4 exemplarily shows that the first, second, and third sub-light-emitting units 121, 122, and 123 each include a first light-emitting layer 12L1.
  • the number of layers of the first light-emitting layer 12L1 can be set according to the actual requirements of the display panel 10, which is not limited in the embodiment of the present application.
  • the light-emitting intensity of the light-emitting unit 12 can be further enhanced, so that the display brightness of the display panel 10 is higher.
  • the light-emitting wavelength of the first light-emitting layer 12L1 is smaller than that of the second light-emitting layer 12L2; in the second sub-light-emitting unit 122, the light-emitting wavelength of the first light-emitting layer 12L1 is less than The light emission wavelength of the two light emitting layers 12L2; in the third sub-light emitting unit 123, the light emission wavelength of the first light emitting layer 12L1 is less than or equal to the light emission wavelength of the second light emitting layer 12L2.
  • light with a smaller wavelength (ie, higher energy) emitted by the first light-emitting layer 12L1 can be used to excite the light-emitting material of the second light-emitting layer 12L2 to emit light.
  • the wavelength range of the emission wavelength of the second light-emitting layer 12L2 in the first sub-light-emitting unit 121 may be 622 nm to 760 nm; the wavelength range of the emission wavelength of the second light-emitting layer 12L2 in the second sub-light-emitting unit 122 may be 492 nm to 577 nm; the wavelength range of the light emission wavelength of the second light emitting layer 12L2 in the third sub-light emitting unit 123 may be 435 nm to 450 nm; the wavelength range of the light emission wavelength of the first light emitting layer 12L1 in the third sub light emitting unit 123 may be 435nm ⁇ 450nm.
  • wavelength range is only an exemplary description, and is not limited.
  • the wavelength range of the emission wavelength in each sub-light-emitting unit may also be set according to the actual needs of the display panel 10, which is not limited in the embodiment of the present application.
  • the light-emitting color of the first light-emitting layer 12L1 is blue B; the light-emitting color of the second light-emitting layer 12L2 in the first sub-light-emitting unit 121 is red R, and the second light-emitting layer in the second sub-light-emitting unit 122
  • the emission color of 12L2 is green G, and the emission color of the second light-emitting layer 12L2 in the third sub-light-emitting unit 123 is blue B.
  • the light emitting color of the first light emitting layer 12L1 is blue B
  • the light emitting color of the second light emitting layer 12L2 in the third sub-light emitting unit 123 is blue B, which can be formed by doping a blue light guest material with a blue light host material.
  • the blue light guest material may be a fluorescent guest material (anthracene-based dopant), or a phosphorescent guest material (metal iridium-based ligand), which is merely an exemplary description and is not limited.
  • the first light-emitting layer 12L1 may further include other materials known to those skilled in the art, which are not limited in the examples of the present application.
  • the light-emitting layer having a light-emitting color of blue needs the highest driving current when the light-emitting intensity is the same, setting the light-emitting color of the first light-emitting layer 12L1 to blue B can make the first sub-light-emitting unit 121 and the second sub-light-emitting unit 121
  • the light-emitting intensity of the second light-emitting layer 12L2 in the light-emitting unit 122 is strong, and the light-emission intensity of the first light-emitting layer 12L1 is weak. Therefore, it is possible to reduce the first light-emitting layer 12L1 to the first and second sub-light-emitting units 121 and 121. Effect of luminous chromaticity of 122.
  • the light-emitting chromaticity of the first and second sub-light-emitting units 121 and 122 is not affected (can also be understood as resulting from this The color shift cannot be distinguished by the human eye, or the resulting color shift is within the acceptable range of the product index).
  • the light-emitting color of the second light-emitting layer 12L2 in the first sub-light-emitting unit 121 is red and can be formed by doping a red light guest material with a red light host material.
  • the light emission color of the second light emitting layer 12L2 in the second sub-light emitting unit 122 is green, and it can be formed by doping a green light guest material with a green light host material.
  • the red-light host material, the red-light guest material, and the green-light host material may be materials known to those skilled in the art, which are not described in this embodiment and are not limited. Wherein, based on the structure of the light emitting unit 12 shown in FIG.
  • the luminous intensity is determined by the superposition of light in the following three parts: in the first part, a second light-emitting layer 12L2 emits light based on the electroluminescence mechanism; in the second part, a first light-emitting layer 12L2 emits light based on the electroluminescence mechanism. It is emitted at this position; in the third part, the light emitted by the first light-emitting layer 12L1 irradiates the second light-emitting layer 12L2, and the second light-emitting layer 12L2 emits light based on the photoluminescence mechanism. Thereby, the light emission intensity of each sub-light emitting unit is enhanced.
  • the light-emitting intensity may include a superposition of the light-emitting intensity of two blue light-emitting layers (a first light-emitting layer 12L1 and a second light-emitting layer 12L2), and a second The light emitting layer 12L2 is irradiated with light from the first light emitting layer 12L1 and is based on the intensity of light emitted by the photoluminescence mechanism. Thereby, the light emission intensity of the third sub-light emitting unit 123 is remarkably improved.
  • its light emission intensity may include a first light-emitting layer 12L1 and a respective second light-emitting layer 12L2 (which may be a red light-emitting layer and a green light-emitting layer, respectively). ), And the intensity of light emitted by the second light-emitting layer 12L2 based on the photoluminescence mechanism under the light of the first light-emitting layer 12L1. As a result, the light emission intensity of the first and second sub-light-emitting units 121 and 122 is increased.
  • the light emission intensities of the first sub-light-emitting unit 121, the second sub-light-emitting unit 122, and the third sub-light-emitting unit 123 are all increased, so that the light-emitting intensity of the entire light-emitting unit 12 can be increased.
  • the display brightness of the display panel 10 is improved.
  • the light emitting unit 12 includes a first sub light emitting unit 121, a second sub light emitting unit 122, and a third sub light emitting unit 123.
  • the light emitting unit 12 includes a first electrode 12L9 disposed near the substrate 11, a second electrode 12L8 disposed opposite the first electrode 12L9, and a second light emitting layer disposed between the first electrode 12L9 and the second electrode 12L8. 12L2 and two first light-emitting layers 12L1.
  • the two first light emitting layers 12L1 are located between the second light emitting layer 12L2 and the first electrode 12L9.
  • the light emission color of the first light emitting layer 12L1 is blue B.
  • the light emitting color of the second light emitting layer 12L2 in the first sub light emitting unit 121 is red R
  • the light emitting color of the second light emitting layer 12L2 in the second sub light emitting unit 122 is green G
  • the second light emitting layer in the third sub light emitting unit 123 The emission color of 12L2 is blue B.
  • the light-emitting intensity may include the light-emitting intensity of three blue light-emitting layers (two first light-emitting layers 12L1 and one second light-emitting layer 12L2). And the intensity of light emitted by the second light-emitting layer 12L2 based on the photoluminescence mechanism under the light of the first light-emitting layer 12L1. Accordingly, the light emission intensity of the third sub-light emitting unit 123 can be significantly increased.
  • its light emission intensity may include two first light-emitting layers 12L1 and one respective second light-emitting layer 12L2 ( It may be the superposition of the light intensity of the red light emitting layer and the green light emitting layer, respectively, and the intensity of light emitted by the second light emitting layer 12L2 based on the photoluminescence mechanism under the light of the first light emitting layer 12L1.
  • the light emission intensity of the first sub-light-emitting unit 121 and the second sub-light-emitting unit 122 can also be increased.
  • the light emission intensities of the first sub-light-emitting unit 121, the second sub-light-emitting unit 122, and the third sub-light-emitting unit 123 can all be increased, so that the light-emitting intensity of the entire light-emitting unit 12 can be improved, and the display panel The display brightness of 10 is improved.
  • FIG. 1 exemplarily shows that the X direction is a row direction and the Y direction is a column direction.
  • a plurality of light emitting units 12 are arranged in an array of 7 columns and 12 rows on one side of the substrate 11. This is only an exemplary description. It does not limit the display panel 10 provided by the embodiments of the present application. In other embodiments, the number of light-emitting units 12 and the array arrangement manner may be set according to the actual needs of the display panel 10, which is not limited in the embodiment of the present application.
  • the number of layers of the first light-emitting layer 12L1 is only two, and in FIG. 4, the number of layers of the first light-emitting layer 12L1 is only one, which is only exemplary.
  • the description is not a limitation on the display panel 10 provided in the present application. In other embodiments, the number of layers of the first light-emitting layer 12L1 may be set according to the actual needs of the display panel 10, which is not limited in the embodiment of the present application.
  • the light emitting unit 12 further includes at least one charge generating layer 12L3, and the charge generating layer 12L3 is located between the adjacent first light emitting layer 12L1 and the second light emitting layer 12L2.
  • the charge generation layer is also located between two adjacent first light emitting layers 12L1.
  • the charge generation layer 12L3 can generate electrons and holes, which are transported to the light emitting layer.
  • the electrons can be recombined with holes injected from the first electrode 12L9, or the holes can be recombined with electrons injected from the second electrode 12L8. , Thereby increasing the light emission intensity of the light emitting unit 12.
  • the third sub light emitting unit 123 includes a first light emitting layer 12L1.
  • the charge generation layer 12L3 is only disposed in the third sub-light emitting unit 123, and the charge generation layer 12L3 is located between the first light emitting layer 12L1 and the second light emitting layer 12L2. Based on this, in the third sub-light emitting unit 123, the electrons and holes generated in the charge generating layer 12L3 are transmitted to the first light emitting layer 12L1 and the second light emitting layer 12L2, respectively.
  • the holes injected by the first electrode 12L9 can also be recombined with the electrons injected by the charge-generating layer 12L3; the second light-emitting in the third sub-light-emitting unit 123 In layer 12L2, electrons injected from the second electrode 12L8 can also be recombined with holes injected from the charge generation layer 12L3, thereby increasing the recombination efficiency of the electrons and holes in the first light-emitting layer 12L1 and the second light-emitting layer 12L2.
  • the utilization rate of holes injected into the first light-emitting layer 12L1 by the first electrode 12L9 and the utilization rate of electrons injected into the second light-emitting layer 12L2 by the second electrode 12L8 are improved, so that the third sub-light-emitting unit can be improved.
  • the light emission intensity of 123 further increases the light emission intensity of the entire light emitting unit 12.
  • the light emitting unit 12 includes two first light emitting layers, a first sub light emitting layer 12L11 provided near the first electrode 12L9 and a second sub light emitting layer 12L12 provided near the second electrode 12L8. .
  • the light emitting unit 12 includes two charge generation layers, a first charge generation layer 12L31 and a second charge generation layer 12L32.
  • the first charge generation layer 12L31 is disposed between the first sub-light emitting layer 12L11 and the second sub-light emission layer 12L12
  • the second charge generation layer 12L32 is disposed between the second sub-light emitting layer 12L12 and the second light-emitting layer 12L2.
  • electrons and holes generated in the first charge generation layer 12L31 are transmitted to the first sub-light emitting layer 12L11 and the second sub-light emission layer 12L12, respectively; electrons and holes generated in the second charge generation layer 12L32 are transmitted to the first The two sub-light emitting layers 12L12 and the second light emitting layer 12L2.
  • holes injected from the first electrode 12L9 can also be recombined with electrons injected from the first charge generating layer 12L31; in the second sub-light emitting layer 12L12, the holes are injected from the first charge generating layer Holes injected by 12L31 may also be recombined with electrons injected from the second charge generation layer 12L32; in the second light emitting layer 12L2, electrons injected from the second electrode 12L8 may also be injected with holes injected from the second charge generation layer 12L32 complex.
  • the electrons and holes generated in the first charge generation layer 12L31 and the second charge generation layer 12L32 can increase the electron sum in the light emitting layer (including the first sub-light emitting layer 12L11, the second sub-light emitting layer 12L12, and the second light-emitting layer 12L2).
  • the recombination efficiency of the holes can increase the light emission intensity of the light emitting unit 12.
  • the three sub-light-emitting units in the light-emitting unit 12 each include a first light-emitting layer 12L1, a second light-emitting layer 12L2, and a charge-generating layer 12L3.
  • the charge-generating layer 12L3 is disposed on Between the first light emitting layer 12L1 and the second light emitting layer 12L2. Based on this, in each sub-light emitting unit, the electrons and holes generated in the charge generating layer 12L3 are transmitted to the first light emitting layer 12L1 and the second light emitting layer 12L2, respectively.
  • holes injected by the first electrode 12L9 can also be recombined with electrons injected by the charge generation layer 12L3; in the second light-emitting layer 12L2, electrons injected by the second electrode 12L8 can also be Recombination with holes injected from the charge generation layer 12L3, thereby increasing the recombination efficiency of electrons and holes in the first light-emitting layer 12L1 and the second light-emitting layer 12L2, and also improving the injection of the first electrode 12L9 into the first light-emitting layer 12L1
  • the utilization rate of the holes and the utilization rate of the electrons injected into the second light emitting layer 12L2 by the second electrode 12L8 are improved, so that the light emission intensity of the light emitting unit 12 can be improved.
  • the charge generation layer 12L3 includes a P-type semiconductor layer and an N-type semiconductor layer.
  • the P-type semiconductor layer can provide holes to the light-emitting layer adjacent to the light-emitting layer and close to the second electrode 12L8 side, and block the electrons in the light-emitting layer from being transmitted to the first electrode 12L8 side.
  • the N-type semiconductor layer can supply electrons to a light-emitting layer adjacent to and close to the first electrode 12L9 side, and block holes in the light-emitting layer from being transmitted to the second electrode 12L9 side.
  • the material of the charge generation layer 12L3 may include Alq3: mg / m-MTDATA: F4-TCNQ, Liq / Al / MoO3, Alq3: Li / NPB: FeCl3 or other charge generation layer materials known to those skilled in the art, This embodiment of the present application does not limit this.
  • the type of the charge generation layer 12L3 may further include the type of an N-type semiconductor layer / metal oxide, an N-type semiconductor layer / organic material, an undoped type, or other types of the charge generation layer 123 known to those skilled in the art. This embodiment of the present application does not limit this.
  • the thickness A of the charge generation layer 12L3 ranges from 10 nm ⁇ A ⁇ 30 nm.
  • the charge generating layer 12L3 in the first sub-light-emitting unit 121 (for example, in FIG. 7, the first charge-generating layer 12L31 and the second The charge generation layer 12L32 is shown), the charge generation layer 12L3 in the second sub-light emitting unit 122 and the charge generation layer 12L3 in the third sub-light emitting unit 123 are separately provided.
  • the carriers include electrons, holes, or excitons.
  • the charge generating layer 12L3 in the first sub-light-emitting unit 121 (for example, the first charge generating layer 12L31 and the second charge are shown in FIG. 10).
  • the generation layer 12L32 is shown), the charge generation layer 12L3 in the second sub-light emitting unit 122 and the charge generation layer 12L3 in the third sub-light emitting unit 123 are continuously disposed.
  • FIG. 10 exemplarily shows a carrier transmission path when the light-emitting unit 12 includes two first light-emitting layers (exemplarily, shown by the first sub-light-emitting layer 12L11 and the second sub-light-emitting layer 12L12 in FIG. 10).
  • FIG. 11 exemplarily illustrates a carrier transmission path when the light-emitting unit 12 includes a first light-emitting layer 12L1 (exemplarily, a vertical transmission path may also be included) Transmission path P2).
  • the charge generation layer 12L3 (for example, shown in FIG. 10 as the first charge generation layer 12L31 and the second charge generation layer 12L32) is generated. Electrons and holes; among them, electrons, holes, and excitons (electrons and holes recombine to form an exciton) usually travel along the longitudinal transmission path P2, and only a few carriers will transport laterally.
  • the light emission intensity of the sub-light-emitting units (including the first sub-light-emitting unit 121, the second sub-light-emitting unit 122, and the third sub-light-emitting unit 123) caused by the lateral transport of carriers in the charge generation layer 12L3 is negligible, and does not affect the display panel. Image display effect.
  • a plurality of sub-light-emitting units (including the first sub-light-emitting unit 121, the second sub-light-emitting unit 122, and the third sub-light-emitting unit 123) are charged-generating layers 12L3 (for example, shown in FIG. 10 with The first charge generation layer 12L31 and the second charge generation layer 12L32 are shown in a continuous arrangement, and the mask opening of the mask plate corresponding to the charge generation layer 12L3 can be increased, thereby reducing the design difficulty of the mask plate and reducing the charge generation.
  • the production difficulty of the layer 12L3 improves the yield of the product (including the light-emitting unit, the display panel, and the applied display device).
  • the second sub-light-emitting unit 122 and the third sub-light-emitting unit 123 are shown by way of example, and they each include a charge generation layer, and the charge generation layers are the same layer, that is, the charge generation layers are continuously disposed.
  • the first sub-light-emitting unit 121 and the third sub-light-emitting unit 123 may be respectively provided with a charge generation layer according to the actual needs of the display panel, and the charge generation layer is continuously disposed. This embodiment of the present application does not deal with this. limited.
  • FIG. 10 only exemplarily shows that the number of layers of the charge generation layer is two
  • FIG. 11 only exemplarily shows that the number of layers of the charge generation layer is one, and that a plurality of The charge generating layers of the light-emitting units are all disposed continuously.
  • the number of charge generation layers can be set according to the actual needs of the display panel, and the charge generation layers in the same light-emitting unit are continuously or separately provided, which is not limited in the embodiments of the present application.
  • the light emitting unit 12 further includes a first carrier function layer and a second carrier function layer.
  • the first carrier function layer is disposed at least between the first electrode 12L9 and the first light-emitting layer 12L1.
  • the second carrier functional layer is disposed at least between the second electrode 12L8 and the second light-emitting layer 12L2.
  • the first carrier function layer is located between the first electrode 12L9 and the first sub-light-emitting layer immediately adjacent to the first electrode 12L9, and is located between the second sub-light-emitting layer and the second sub-light-emitting layer adjacent to the first sub-light-emitting layer.
  • An electrode 12L9 is between the charge generating layer and between the second light emitting layer 12L2 and the charge generating layer immediately adjacent to the second light emitting layer 12L2.
  • the second carrier function layer is located between the second electrode 12L8 and the second light-emitting layer 12L2, and is located between the first light-emitting layer and the charge generation layer adjacent to the first light-emitting layer and close to the second electrode 12L8.
  • the first carrier function layer includes a first hole auxiliary function layer 12L41, a second hole auxiliary function layer 12L42, and a third hole auxiliary function layer 12L43.
  • the first hole auxiliary function layer 12L41 is located between the first electrode 12L9 and the first sub-light emitting layer 12L11.
  • the second hole auxiliary function layer 12L42 is located between the second sub-light emitting layer 12L12 and the first charge generation layer 12L31.
  • the third hole auxiliary function layer 12L43 is located between the second light emitting layer 12L2 and the second charge generation layer 12L32.
  • the second carrier function layer includes a first electronic auxiliary function layer 12L51, a second electronic auxiliary function layer 12L52, and a third electronic auxiliary function layer 12L53.
  • the first electron auxiliary function layer 12L51 is located between the first sub-light emitting layer 12L11 and the first charge generation layer 12L31.
  • the second electron auxiliary function layer 12L52 is located between the second sub-light emitting layer 12L12 and the second charge generating layer 12L32.
  • the third electronic auxiliary function layer 12L53 is located between the second electrode 12L8 and the second light-emitting layer 12L2.
  • the first carrier function layer may be a hole-type auxiliary function layer and may have a multi-layer structure, for example, it may include a hole injection layer, a hole transport layer, and an electron blocking layer.
  • the second carrier function layer may be an electron-type auxiliary function layer, or may have a multi-layer structure, for example, it may include an electron injection layer, an electron transport layer, and a hole blocking layer.
  • Both the first carrier functional layer and the second carrier functional layer may include materials of the carrier functional layer known to those skilled in the art, which are not described in this embodiment and are not limited.
  • the formation method of the first carrier function layer and the second carrier function layer may include evaporation, spray coating, inkjet printing, or other film formation methods known to those skilled in the art.
  • the formation methods of the two layers may be the same or different. This is not limited in the embodiments of the present application.
  • the light-emitting unit includes two first carrier function layers (exemplarily shown by the first hole auxiliary function layer 12L41 and the third hole auxiliary function layer 12L43) and two Layer, a second carrier function layer (exemplarily shown by a first electronic auxiliary function layer 12L51 and a third electronic auxiliary function layer 12L53).
  • the first hole auxiliary function layer 12L41 is located between the first electrode 12L9 and the first light emitting layer 12L1, the first electron auxiliary function layer 12L51 is located between the first light emitting layer 12L1 and the charge generating layer 12L3, and the third hole assists
  • the functional layer 12L43 is located between the charge generation layer 12L3 and the second light emitting layer 12L2, and the third electron auxiliary function layer 12L53 is located between the second light emitting layer 12L2 and the second electrode 12L8.
  • the first hole auxiliary function layer 12L41 transmits holes from the first electrode 12L9 to the first light emitting layer 12L1 and prevents electrons from being transmitted from the first light emitting layer 12L1 to the first electrode 12L9; the first electron auxiliary function layer 12L51 The electrons are transferred from the charge generating layer 12L3 to the first light emitting layer 12L1, and the holes are prevented from being transferred from the first light emitting layer 12L1 to the charge generating layer 12L3.
  • the electrons and holes transmitted to the first light-emitting layer 12L1 are restricted to the first light-emitting layer 12L1, the number of electrons and holes increases, and the recombination efficiency thereof increases, so that the light-emitting intensity of the first light-emitting layer 12L1 is increased.
  • the third hole auxiliary function layer 12L43 transmits holes from the charge generating layer 12L3 to the second light emitting layer 12L2, and prevents electrons from being transmitted from the second light emitting layer 12L2 to the charge generating layer 12L3; the third electron auxiliary function layer 12L53 transmits electrons from The second electrode 12L8 is transmitted to the second light-emitting layer 12L2 and prevents holes from being transmitted from the second light-emitting layer 12L2 from the second light-emitting layer 12L2 to the second electrode 12L8, and thus, the electrons and holes transmitted to the second light-emitting layer 12L2 Confined to the second light-emitting layer 12L2, the number of electrons and holes increases, and its recombination efficiency increases, so that the light-emitting intensity of the second light-emitting layer 12L2 increases. Since the light emission intensities of the first light-emitting layer 12L1 and the second light-emitting layer 12L2 both increase, the light-emission intensity of the entire light
  • the first carrier function layer in the first sub light emitting unit 121 (for example, may include a first hole auxiliary function layer 12L41).
  • the second hole auxiliary function layer 12L42 or the third hole auxiliary function layer 12L43), the first carrier function layer in the second sub-light emitting unit 122 and the first carrier function in the third sub-light emitting unit 123 Layers are separated.
  • the second carrier function layer in the first sub-light-emitting unit 121 (for example, may include a first electronic auxiliary function layer 12L51, a second electronic auxiliary function layer 12L52, and a third electronic auxiliary function layer). 12L53), the second carrier function layer in the second sub-light-emitting unit 122 and the second carrier function layer in the third sub-light-emitting unit 123 are separately provided.
  • At least part of the first carrier functional layer in the first sub light emitting unit 121, at least part of the first carrier functional layer in the second sub light emitting unit 122, and at least part of The first carrier function layer in the third sub-light emitting unit 123 is continuously disposed.
  • At least part of the second carrier functional layer in the first sub light emitting unit 121, at least part of the second carrier functional layer in the second sub light emitting unit 122, and at least part of the The second carrier function layer in the three sub-light emitting unit 123 is continuously disposed.
  • At least part of the first carrier functional layer in the first sub light emitting unit 121, at least part of the first carrier functional layer in the second sub light emitting unit 122, and at least part of The first carrier function layer in the third sub-light emitting unit 123 is continuously disposed. And, at least part of the second carrier functional layer in the first sub-light emitting unit 121, at least part of the second carrier functional layer in the second sub-light emitting unit 122, and at least part of the second of the third sub-light emitting unit 123 The carrier function layer is set continuously.
  • the first carrier function layer for example, the first hole assisting function layer 12L41, The second hole auxiliary functional layer 12L42 and the third hole auxiliary functional layer 12L43
  • the first carrier functional layer in the second sub-light emitting unit 122 and the first carrier functional layer in the third sub-light emitting unit 123 Set continuously.
  • the second carrier function layer in the first sub-light emitting unit 121 (for example, may include the first electronic auxiliary function layer 12L51, the second electronic auxiliary function layer 12L52, and the third electronic auxiliary function layer 12L53), the first The second carrier functional layer in the second sub-light emitting unit 122 and the second carrier functional layer in the third sub-light emitting unit 123 are continuously disposed.
  • carriers tend to propagate along the path with the least resistance. Because the lateral resistance of the first carrier functional layer is much larger than its own longitudinal resistance, and the lateral resistance of the second carrier functional layer is also much larger than its own vertical resistance, therefore, for the first carrier functional layer As for the second carrier function layer, carriers tend to be transmitted along the longitudinal transmission path P2, but not transversely.
  • the first carrier function layer of a plurality of sub light emitting units (including the first sub light emitting unit 121, the second sub light emitting unit 122, and the third sub light emitting unit 123) is continuously disposed, or the second The carrier function layer is set continuously, or the first carrier function layer and the second carrier function layer are respectively set continuously, which will not affect the light emitting intensity and light emitting color of the light emitting unit.
  • the first carrier function layer of a plurality of sub-light-emitting units may be continuously disposed, The mask opening area of the mask plate corresponding to the large first carrier function layer.
  • the second carrier function layer of a plurality of sub-light-emitting units is continuously disposed, and the second carrier can be increased.
  • FIG. 16 only exemplarily shows that the second sub-light-emitting unit 122 and the third sub-light-emitting unit 123 include two layers of the first carrier function layer (the first hole auxiliary function layer 12L41 and the third hole auxiliary function, respectively).
  • Layer 12L43 and two second carrier function layers (first electron auxiliary function layer 12L51 and third electron auxiliary function layer 12L53), and the first sub-light emitting unit 121 does not include the third hole auxiliary function layer 12L43 and the first Electronic auxiliary function layer 12L51.
  • the third hole auxiliary layer 12L43 is continuously provided in the second sub-light emitting unit 122 and the third sub-light emitting unit 123.
  • the first electron auxiliary layer 12L51 is continuously provided in the second sub-light emitting unit 122 and the third sub-light emitting unit 123, which is merely an exemplary description and not a limitation.
  • a third hole auxiliary layer 12L43 may be provided continuously in the first sub-light emitting unit 121 and the third sub-light emitting unit 123, or the first electron auxiliary layer 12L51 may The one sub-light-emitting unit 121 and the third sub-light-emitting unit 123 are continuously disposed, which is not limited in the embodiment of the present application.
  • FIG. 12 and FIG. 14 show only three layers of the first carrier function layer and three layers of the second carrier function layer by way of example;
  • FIG. 13, FIG. 15, and FIG. 16 only show the examples by way of example.
  • Two layers of first carrier function layer and two layers of second carrier function layer are provided, which are only exemplary descriptions, but not limitation.
  • the number of first carrier function layers and the number of second carrier function layers may also be set according to the actual needs of the display panel, which is not limited in the embodiment of the present application.
  • An embodiment of the present application further provides a display device.
  • the display device 20 includes any one of the display panels 10 provided in the above embodiments. Therefore, the display device 20 has the beneficial effects of the display panel 10 described above, which can be understood by referring to the above description, and will not be repeated here.
  • the display device 20 may be a display device such as a mobile phone, a computer, and a smart wearable device, which is not limited in the embodiment of the present application.

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Abstract

一种显示面板和显示装置，其中显示面板包括：基板(11)；设置在基板一侧且呈阵列排布的多个发光单元(12)，每个发光单元包括第一子发光单元(121)、第二子发光单元(122)和第三子发光单元(123)；其中，发光单元包括靠近基板设置的第一电极(12L9)，与第一电极相对设置的第二电极(12L8)，以及设置在第一电极与第二电极之间的第二发光层(12L2)；至少第三子发光单元还包括至少一层第一发光层(12L1)，至少一层第一发光层位于第二发光层与第一电极之间。

Description

显示面板和显示装置
本公开要求在2018年09月28日提交中国专利局、申请号为201821592046.7的中国专利申请的优先权，该申请的全部内容通过引用结合在本公开中。
技术领域
本申请涉及显示技术领域，例如涉及一种显示面板和显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)具有自发光的发光特性，不需要背光源，将其应用于显示面板和显示装置时，显示面板和显示装置的整体厚度较薄，有利于实现显示面板和显示装置的轻薄化设计。同时，有机发光二极管具有显示亮度高、视角广以及响应速度快等优势。
但是，现有的有机发光二极管发光(发光单元)强度偏低，将该发光单元应用于显示面板和显示装置时，显示面板和显示装置的整体显示亮度较低。
发明内容
本申请提供一种显示面板和显示装置，以提高发光单元的发光强度，从而提高显示面板和显示装置的显示亮度。
本申请提供了一种显示面板，该显示面板包括：基板；设置在所述基板一侧且呈阵列排布的多个发光单元，每个发光单元包括第一子发光单元、第二子发光单元和第三子发光单元。发光单元包括靠近所述基板设置的第一电极，与所述第一电极相对设置的第二电极，以及设置在所述第一电极与所述第二电极之间的第二发光层。至少所述第三子发光单元还包括至少一层第一发光层，所 述至少一层第一发光层位于所述第二发光层与所述第一电极之间。
在一实施例中，所述第一子发光单元和所述第二子发光单元的至少之一包括至少一层第一发光层。
在一实施例中，所述第一子发光单元中的所述第一发光层的层数和所述第二子发光单元中的所述第一发光层的层数中的至少之一与所述第三子发光单元中的所述第一发光层的层数相等。
在一实施例中，所述第一子发光单元中，所述第一发光层的发光波长小于所述第二发光层的发光波长；所述第二子发光单元中，所述第一发光层的发光波长小于所述第二发光层的发光波长；所述第三子发光单元中，所述第一发光层的发光波长小于或者等于所述第二发光层的发光波长。
在一实施例中，所述第一发光层的发光颜色为蓝色；所述第一子发光单元中的所述第二发光层的发光颜色为红色，所述第二子发光单元中所述第二发光层的发光颜色为绿色，所述第三子发光单元中所述第二发光层的发光颜色为蓝色。
在一实施例中，所述发光单元还包括电荷产生层；所述电荷产生层位于相邻的所述第一发光层与所述第二发光层之间；当所述第一发光层的层数为至少两层时，所述电荷产生层还位于相邻的两层所述第一发光层之间。
在一实施例中，所述第一子发光单元中的电荷产生层和所述第二子发光单元中的电荷产生层与所述第三子发光单元中的电荷产生层中的至少两者连续设置。
在一实施例中，所述电荷产生层的厚度表示为A，10nm≤A≤30nm。
在一实施例中，所述发光单元还包括第一载流子功能层和第二载流子功能层；所述第一载流子功能层位于所述第一电极与紧邻所述第一电极的第一发光 层之间，以及位于所述第一发光层与紧邻所述第一发光层且靠近所述第一电极的所述电荷产生层之间，以及位于所述第二发光层与紧邻所述第二发光层的所述电荷产生层之间。所述第二载流子功能层位于所述第二电极与所述第二发光层之间，以及位于所述第一发光层与紧邻所述第一发光层且靠近所述第二电极的所述电荷产生层之间。
在一实施例中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第一载流子功能层、至少部分所述第二子发光单元中的所述第一载流子功能层和至少部分所述第三子发光单元中的所述第一载流子功能层连续设置。
在一实施例中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第二载流子功能层、至少部分所述第二子发光单元中的所述第二载流子功能层和至少部分所述第三子发光单元中的所述第二载流子功能层连续设置。
在一实施例中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第一载流子功能层、至少部分所述第二子发光单元中的所述第一载流子功能层和至少部分所述第三子发光单元中的所述第一载流子功能层连续设置。并且，至少部分所述第一子发光单元中的所述第二载流子功能层、至少部分所述第二子发光单元中的所述第二载流子功能层和至少部分所述第三子发光单元中的所述第二载流子功能层连续设置。
本申请还提供了一种显示装置，该显示装置包括本申请提供的上述任一种显示面板。
附图说明
图1是本申请一实施例提供的一种显示面板的示意图；
图2是本申请一实施例提供的一种发光单元的示意图；
图3是本申请一实施例提供的另一种发光单元的示意图；
图4是本申请一实施例提供的又一种发光单元的示意图；
图5是本申请一实施例提供的又一种发光单元的示意图；
图6是本申请一实施例提供的又一种发光单元的示意图；
图7是本申请一实施例提供的又一种发光单元的示意图；
图8是本申请一实施例提供的又一种发光单元的示意图；
图9是本申请一实施例提供的又一种发光单元的示意图；
图10是本申请一实施例提供的又一种发光单元的示意图；
图11是本申请一实施例提供的又一种发光单元的示意图；
图12是本申请一实施例提供的又一种发光单元的示意图；
图13是本申请一实施例提供的又一种发光单元的示意图；
图14是本申请一实施例提供的又一种发光单元的示意图；
图15是本申请一实施例提供的又一种发光单元的示意图；
图16是本申请一实施例提供的又一种发光单元的示意图；
图17是本申请一实施例提供的一种显示装置的示意图。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。此处所描述的具体实施例仅仅用于解释本申请，而非对本申请的限定。另外，为了便于描述，附图中仅示出了与本申请相关的部分而非全部结构。
在一实施例中，参照图1和图2，显示面板10包括：基板11；设置在基板11一侧且呈阵列排布的多个发光单元12。每个发光单元12包括第一子发光单元121、第二子发光单元122和第三子发光单元123。其中，发光单元12包括 靠近基板11设置的第一电极12L9，与第一电极12L9相对设置的第二电极12L8，以及设置在第一电极12L9与第二电极12L8之间第二发光层12L2。至少第三子发光单元123还包括至少一层第一发光层12L1(示例性的，图2中示出了一层第一发光层12L1)，至少一层第一发光层12L1位于第二发光层12L2与第一电极12L9之间。
在本申请中，基板11可为刚性基板或柔性基板。示例性的，刚性基板可包括玻璃、硅片，柔性基板可包括聚酰亚胺、不锈钢，此仅为示例性的说明，而非限定。在其他实施方式中，基板11还可以为本领域技术人员可知的其他基板，本申请实施例对此不作限定。
在一实施例中，第一电极12L9可为阳极。示例性的，第一电极12L9的材料可为铟锡氧化物(ITO)、掺氟氧化锡(FTO)、氧化铟锌(IZO)或者本领域技术人员可知的其它高导电率和高逸出功(逸出功又叫功函数或脱出功，是指电子逸出时克服表面势垒必须做的功)的透明导电电极材料，本申请实施例对此不作限定。
在一实施例中，第二电极12L8可为阴极。示例性的，第二电极12L8的材料可为铜(Cu)、铝(Al)、金(Au)、银(Ag)等金属、金属合金或者本领域技术人员可知的其它低逸出功的电极材料，本申请实施例对此不作限定。
第一发光层12L1和第二发光层12L2的材料可为本领域技术人员可知的任一种材料，本申请实施例对此不作限定。
通过设置至少第三子发光单元123包括至少一层第一发光层12L1，可在第三子发光单元123中形成叠层的发光结构，增大发光单元12的发光强度，进而提高显示面板10的显示亮度。
在一实施例中，参照图3和图4，第一子发光单元121和第二子发光单元 122中的至少之一包括至少一层第一发光层12L1。
图3中示例性的示出了第二子发光单元122和第三子发光单元123分别包括一层第一发光层12L1。当然，还可以设置第一子发光单元121和第三子发光单元123分别包括一层第一发光层12L1。图4中示例性的示出了第一子发光单元121、第二子发光单元122和第三子发光单元123分别包括一层第一发光层12L1。当然，第一发光层12L1的层数可根据显示面板10的实际需求设置，本申请实施例对此不作限定。
通过在发光单元12中的两个子发光单元或三个子发光单元中分别设置至少一层第一子发光层12L1，可进一步增强发光单元12的发光强度，从而使得显示面板10的显示亮度较高。
在一实施例中，第一子发光单元121中，第一发光层12L1的发光波长小于第二发光层12L2的发光波长；第二子发光单元122中，第一发光层12L1的发光波长小于第二发光层12L2的发光波长；第三子发光单元123中，第一发光层12L1的发光波长小于或者等于第二发光层12L2的发光波长。
如此设置，可利用第一发光层12L1发出的波长较小(即能量较高)的光线去激发第二发光层12L2的发光材料发光。
示例性的，第一子发光单元121中的第二发光层12L2的发光波长的波长范围可为622nm～760nm；第二子发光单元122中的第二发光层12L2的发光波长的波长范围可为492nm～577nm；第三子发光单元123中的第二发光层12L2的发光波长的波长范围可为435nm～450nm；第三子发光单元123中的第一发光层12L1的发光波长的波长范围可为435nm～450nm。上述波长范围仅为示例性的说明，而非限定。在其他实施方式中，还可以根据显示面板10的实际需求，设置每个子发光单元中的发光波长的波长范围，本申请实施例对此不作限定。
在一实施例中，第一发光层12L1的发光颜色为蓝色B；第一子发光单元121中的第二发光层12L2的发光颜色为红色R，第二子发光单元122中第二发光层12L2的发光颜色为绿色G，第三子发光单元123中第二发光层12L2的发光颜色为蓝色B。
其中，第一发光层12L1的发光颜色为蓝色B，第三子发光单元123中第二发光层12L2的发光颜色为蓝色B，其均可通过蓝光主体材料掺杂蓝光客体材料形成。示例性的，蓝光客体材料可为荧光客体材料(蒽类掺杂剂)，或者磷光客体材料(金属铱类配体)，此仅为示例性的说明，而非限定。在其他实施方式中，第一发光层12L1还可包括本领域技术人员可知的其他材料，本申请实施例对此不作限定。
此外，由于发光强度相同时，发光颜色为蓝色的发光层需要的驱动电流最高，因此，设置第一发光层12L1的发光颜色为蓝色B，可使第一子发光单元121和第二子发光单元122中的第二发光层12L2的发光强度较强，第一发光层12L1的发光强度较弱，由此，可降低第一发光层12L1对第一子发光单元121和第二子发光单元122的发光色度的影响。从而，在增强第一子发光单元121和第二子发光单元122的发光强度的同时，不影响第一子发光单元121和第二子发光单元122的发光色度(也可以理解为由此产生的色偏人眼无法分辨，或者由此产生的色偏在产品指标可接受的范围内)。
第一子发光单元121中的第二发光层12L2的发光颜色为红色，可通过红光主体材料掺杂红光客体材料形成。第二子发光单元122中的第二发光层12L2的发光颜色为绿色，可通过绿光主体材料掺杂绿光客体材料形成。示例性的，红光主体材料、红光客体材料、绿光主体材料可为本领域技术人员可知的材料，本申请实施例对此不再赘述，也不作限定。其中，基于图4中示出的发光单元 12的结构，对于每个子发光单元(示例性的，可为第一子发光单元121、第二子发光单元122或第三子发光单元123)而言，其发光强度由下述三部分的光线叠加决定：第一部分，一个第二发光层12L2基于电致发光机制发光；第二部分，一个第一发光层12L2各自基于电致发光机制发光，光线由此位置处出射；第三部分，第一发光层12L1发射的光线照射到第二发光层12L2，第二发光层12L2基于光致发光机制发光。由此，每个子发光单元的发光强度均被增强。
对于发光颜色为蓝色的第三子发光单元123而言，其发光强度可包括两个蓝光发光层(一个第一发光层12L1和一个第二发光层12L2)的发光强度的叠加，以及第二发光层12L2在第一发光层12L1的光线照射下，基于光致发光机制发出的光线强度。由此，第三子发光单元123的发光强度显著提高。
对于第一子发光单元121或第二子发光单元122而言，其发光强度可包括一个第一发光层12L1和一个各自的第二发光层12L2(可分别为红光发光层和绿光发光层)的发光强度的叠加，以及第二发光层12L2在第一发光层12L1的光线照射下，基于光致发光机制发出的光线的强度。由此，第一子发光单元121和第二子发光单元122的发光强度提高。
由此，本申请实施例提供的显示面板10中，第一子发光单元121、第二子发光单元122和第三子发光单元123的发光强度均提高，从而整个发光单元12的发光强度可提高，进而显示面板10的显示亮度提高。
在一实施例中，参照图5，发光单元12包括第一子发光单元121、第二子发光单元122和第三子发光单元123。并且，发光单元12包括靠近基板11设置的第一电极12L9，与第一电极12L9相对设置的第二电极12L8，以及设置在第一电极12L9与第二电极12L8之间的一层第二发光层12L2和两层第一发光层12L1。两层第一发光层12L1位于第二发光层12L2与第一电极12L9之间。第一 发光层12L1的发光颜色为蓝色B。第一子发光单元121中的第二发光层12L2的发光颜色为红色R，第二子发光单元122中第二发光层12L2的发光颜色为绿色G，第三子发光单元123中第二发光层12L2的发光颜色为蓝色B。
图5示出的发光单元的结构中，对于第三子发光单元123而言，其发光强度可包括三个蓝光发光层(两个第一发光层12L1和一个第二发光层12L2)的发光强度的叠加，以及第二发光层12L2在第一发光层12L1的光线照射下，基于光致发光机制发出的光线强度。由此，第三子发光单元123的发光强度可显著提高。
图5示出的发光单元的结构中，对于第一子发光单元121或第二子发光单元122而言，其发光强度可包括两个第一发光层12L1和一个各自的第二发光层12L2(可分别为红光发光层和绿光发光层)的发光强度的叠加，以及第二发光层12L2在第一发光层12L1的光线照射下，基于光致发光机制发出的光线的强度。由此，第一子发光单元121和第二子发光单元122的发光强度也可提高。
由此，该显示面板10中，第一子发光单元121、第二子发光单元122和第三子发光单元123的发光强度均可提高，从而整个发光单元12的发光强度可提高，进而显示面板10的显示亮度提高。
图1中示例性的示出了X方向为行方向，Y方向为列方向，多个发光单元12在基板11的一侧呈7列12行的阵列排布，此仅为示例性的说明，而非对本申请实施方式提供的显示面板10的限定。在其他实施方式中，可根据显示面板10的实际需求，设置发光单元12的数量以及阵列排布方式，本申请实施例对此不作限定。
图5中仅示例性的示出了第一发光层12L1的层数为两层，图4中仅示例性的示出了第一发光层12L1的层数为一层，此仅为示例性的说明，而非对本申请 提供的显示面板10的限定。在其他实施方式中，可根据显示面板10的实际需求，设置第一发光层12L1的层数，本申请实施例对此不作限定。
在一实施例中，参照图6-图8，发光单元12还包括至少一层电荷产生层12L3,电荷产生层12L3位于相邻的第一发光层12L1与第二发光层12L2之间。当第一发光层12L1的层数为至少两层时，电荷产生层还位于两个相邻的第一发光层12L1之间。
电荷产生层12L3能产生电子和空穴，该电子和空穴传输至发光层中，电子可与从第一电极12L9注入的空穴复合，或者空穴可与从第二电极12L8注入的电子复合，从而提高了发光单元12的发光强度。
在一实施例中，参照图6，图6中示出的发光单元12中，仅第三子发光单元123包括一层第一发光层12L1。其中，电荷产生层12L3仅设置于第三子发光单元123中，且电荷产生层12L3位于第一发光层12L1和第二发光层12L2之间。基于此，第三子发光单元123中，电荷产生层12L3中产生的电子和空穴分别传输至第一发光层12L1和第二发光层12L2。从而，第三子发光单元123中的第一发光层12L1中，由第一电极12L9注入的空穴还可与由电荷产生层12L3注入的电子复合；第三子发光单元123中的第二发光层12L2中，由第二电极12L8注入的电子还可与由电荷产生层12L3注入的空穴复合，从而增加了第一发光层12L1和第二发光层12L2中电子和空穴的复合效率，也提高了第一电极12L9注入到第一发光层12L1中的空穴的利用率，以及提高了第二电极12L8注入到第二发光层12L2中的电子的利用率，从而可提高第三子发光单元123的发光强度，进而提高发光单元12整体的发光强度。
在一实施例中，参照图7，发光单元12包括两层第一发光层，分别为靠近第一电极12L9设置的第一子发光层12L11和靠近第二电极12L8设置的第二子 发光层12L12。并且，发光单元12包括两层电荷产生层，第一电荷产生层12L31和第二电荷产生层12L32。第一电荷产生层12L31设置于第一子发光层12L11与第二子发光层12L12之间，第二电荷产生层12L32设置于第二子发光层12L12与第二发光层12L2之间。基于此，第一电荷产生层12L31中产生的电子和空穴分别传输至第一子发光层12L11和第二子发光层12L12；第二电荷产生层12L32中产生的电子和空穴分别传输至第二子发光层12L12和第二发光层12L2。从而，在第一子发光层12L11中，从第一电极12L9注入的空穴还可以与从第一电荷产生层12L31注入的电子复合；在第二子发光层12L12中，从第一电荷产生层12L31注入的空穴还可以与从第二电荷产生层12L32注入的电子复合；在第二发光层12L2中，从第二电极12L8注入的电子还可以与从第二电荷产生层12L32注入的空穴复合。通过第一电荷产生层12L31和第二电荷产生层12L32产生的电子与空穴，可增加发光层(包括第一子发光层12L11、第二子发光层12L12和第二发光层12L2)中电子和空穴的复合效率，从而可提高发光单元12的发光强度。
在一实施例中，参照图8，发光单元12中的三个子发光单元均包括一层第一发光层12L1、一层第二发光层12L2以及一层电荷产生层12L3，电荷产生层12L3设置于第一发光层12L1与第二发光层12L2之间。基于此，每个子发光单元中，电荷产生层12L3中产生的电子和空穴分别传输至第一发光层12L1和第二发光层12L2。从而，在第一发光层12L1中，由第一电极12L9注入的空穴还可与由电荷产生层12L3注入的电子复合；在第二发光层12L2中，由第二电极12L8注入的电子还可与由电荷产生层12L3注入的空穴复合，从而增加了第一发光层12L1和第二发光层12L2中电子和空穴的复合效率，也提高了第一电极12L9注入到第一发光层12L1中的空穴的利用率，以及提高了第二电极12L8注入到第二发光层12L2中的电子的利用率，从而可提高发光单元12的发光强度。
在一实施例中，电荷产生层12L3包括P型半导体层和N型半导体层。
其中，P型半导体层可向与之紧邻的且靠近第二电极12L8一侧的发光层提供空穴，并阻挡该发光层中的电子向第一电极12L8一侧传输。N型半导体层可向与之紧邻且靠近第一电极12L9一侧的发光层提供电子，并阻挡该发光层中的空穴向第二电极12L9一侧传输。
示例性的，电荷产生层12L3的材料可包括Alq3:mg/m-MTDATA:F4-TCNQ、Liq/Al/MoO3、Alq3:Li/NPB:FeCl3或者本领域技术人员可知的其他电荷产生层材料，本申请实施例对此不作限定。
在其他实施方式中，电荷产生层12L3的类型还可包括N型半导体层/金属氧化物、N型半导体层/有机物、非掺杂型或者本领域技术人员可知的其他电荷产生层123的类型，本申请实施例对此不作限定。
在一实施例中，电荷产生层12L3的厚度A的取值范围为10nm≤A≤30nm。
如此设置，可使得较多的电子和空穴纵向(垂直于基板11所在平面的方向)传输，减小横向(平行于基板11所在平面的方向)电流泄露，从而有较多的电子和空穴有效复合，提高发光单元12的发光强度。
在一实施例中，继续参照图7或图8，同一发光单元12中，第一子发光单元121中的电荷产生层12L3(示例性的，图7中以第一电荷产生层12L31和第二电荷产生层12L32示出)、第二子发光单元122中的电荷产生层12L3与第三子发光单元123中的电荷产生层12L3分立设置。
如此设置，可避免载流子在第一子发光单元121、第二子发光单元122和第三子发光单元123之间相互传输，从而可避免给同一发光单元12中的第一子发光单元121、第二子发光单元122和第三子发光单元123分别提供不同的驱动电流时，不同的子发光单元(包括第一子发光单元121、第二子发光单元122和第 三子发光单元123)相互影响。因此，便于实现第一子发光单元121、第二子发光单元122和第三子发光单元123的发光强度和发光颜色的精确控制。
在本申请的实施例中，载流子包括电子、空穴或激子。
在一实施例中，参照图9-图11，同一发光单元12中，第一子发光单元121中的电荷产生层12L3(示例性的，图10中以第一电荷产生层12L31和第二电荷产生层12L32示出)、第二子发光单元122中的电荷产生层12L3与第三子发光单元123中的电荷产生层12L3连续设置。
图10示例性的示出了发光单元12包括两层第一发光层(示例性的，图10中以第一子发光层12L11和第二子发光层12L12示出)时载流子的传输路径(示例性的，可包括纵向传输路径P2)；图11中示例性的示出了发光单元12包括一层第一发光层12L1时，载流子的传输路径(示例性的，也可包括纵向传输路径P2)。
其中，当给第一电极12L9和第二电极12L8施加一定的电压时，电荷产生层12L3(示例性的，图10中以第一电荷产生层12L31和第二电荷产生层12L32示出)中产生电子和空穴；其中，电子、空穴以及激子(电子与空穴复合，形成激子)通常沿纵向传输路径P2传输，只有极少数的载流子会横向传输。因此，电荷产生层12L3中载流子横向传输导致的子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)的发光强度可忽略，不影响显示面板的图像显示效果。
此外，将同一发光单元12中，多个子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)的电荷产生层12L3(示例性的，图10中以第一电荷产生层12L31和第二电荷产生层12L32示出)连续设置，还可以增大电荷产生层12L3对应的掩模板的掩模开口，从而降低该掩模板的设计 难度，同时，降低电荷产生层12L3的制作难度，提高产品(包括发光单元、显示面板以及应用的显示装置)良率。
图9中仅示例性的示出了第二子发光单元122和第三子发光单元123分别包括电荷产生层，且该电荷产生层为同一层，即电荷产生层连续设置，此仅为示例性的说明，而非限定。在其他实施方式中，还可以根据显示面板的实际需求，设置第一子发光单元121和第三子发光单元123分别包括电荷产生层，且该电荷产生层连续设置，本申请实施例对此不作限定。
此外，图10中仅示例性的示出了电荷产生层的层数为两层，图11中仅示例性的示出了电荷产生层的层数为一层，且同一发光单元中的多个子发光单元的电荷产生层均连续设置，此仅为示例性的说明，而非限定。在其他实施方式中，可根据显示面板的实际需求，设置电荷产生层的层数，以及同一发光单元中的电荷产生层是连续设置的或者分立设置的，本申请实施例对此不作限定。
在一实施例中，发光单元12还包括第一载流子功能层和第二载流子功能层。第一载流子功能层至少设置于第一电极12L9与第一发光层12L1之间。第二载流子功能层至少设置于第二电极12L8与第二发光层12L2之间。
在一实施例中，第一载流子功能层位于第一电极12L9与紧邻第一电极12L9的第一子发光层之间，以及位于第二子发光层与紧邻第二子发光层且靠近第一电极12L9的电荷产生层之间，以及位于第二发光层12L2与紧邻第二发光层12L2的电荷产生层之间。第二载流子功能层位于第二电极12L8与第二发光层12L2之间，以及位于第一发光层与紧邻第一发光层且靠近第二电极12L8的电荷产生层之间。
参照图12，第一载流子功能层包括第一空穴辅助功能层12L41、第二空穴辅助功能层12L42和第三空穴辅助功能层12L43。第一空穴辅助功能层12L41位 于第一电极12L9与第一子发光层12L11之间。第二空穴辅助功能层12L42位于第二子发光层12L12与第一电荷产生层12L31之间。第三空穴辅助功能层12L43位于第二发光层12L2与第二电荷产生层12L32之间。
继续参照图12，第二载流子功能层包括第一电子辅助功能层12L51、第二电子辅助功能层12L52和第三电子辅助功能层12L53。第一电子辅助功能层12L51位于第一子发光层12L11与第一电荷产生层12L31之间。第二电子辅助功能层12L52位于第二子发光层12L12与第二电荷产生层12L32之间。第三电子辅助功能层12L53位于第二电极12L8与第二发光层12L2之间。
其中，第一载流子功能层可为空穴型的辅助功能层，可以具有多层结构，例如可包括空穴注入层、空穴传输层以及电子阻挡层。第二载流子功能层可为电子型的辅助功能层，也可以具有多层结构，例如可以包括电子注入层、电子传输层以及空穴阻挡层。
第一载流子功能层和第二载流子功能层均可包括本领域技术人员可知的载流子功能层材料，本申请实施例对此不再赘述，也不作限定。第一载流子功能层和第二载流子功能层的形成方式可包括蒸镀、喷涂、喷墨打印或本领域技术人员可知的其他成膜方式，两层的形成方式可相同，可不同，本申请实施例对此不作限定。
在一实施例中，参照图13，发光单元包括两层第一载流子功能层(示例性的，以第一空穴辅助功能层12L41和第三空穴辅助功能层12L43示出)和两层第二载流子功能层(示例性的，以第一电子辅助功能层12L51和第三电子辅助功能层12L53示出)。其中，第一空穴辅助功能层12L41位于第一电极12L9和第一发光层12L1之间，第一电子辅助功能层12L51位于第一发光层12L1与电荷产生层12L3之间，第三空穴辅助功能层12L43位于电荷产生层12L3和第二 发光层12L2之间，第三电子辅助功能层12L53位于第二发光层12L2与第二电极12L8之间。基于此，第一空穴辅助功能层12L41将空穴由第一电极12L9传输至第一发光层12L1，并阻止电子由第一发光层12L1向第一电极12L9传输；第一电子辅助功能层12L51将电子由电荷产生层12L3传输至第一发光层12L1，并阻止空穴由第一发光层12L1向电荷产生层12L3传输。由此，传输至第一发光层12L1的电子和空穴被限制在第一发光层12L1中，电子和空穴的数量增多，其复合效率增大，从而第一发光层12L1的发光强度提高。第三空穴辅助功能层12L43将空穴由电荷产生层12L3传输至第二发光层12L2，并阻止电子由第二发光层12L2传输至电荷产生层12L3；第三电子辅助功能层12L53将电子由第二电极12L8传输至第二发光层12L2，并阻止空穴由第二发光层12L2由第二发光层12L2传输至第二电极12L8，由此，传输至第二发光层12L2的电子和空穴被限制在第二发光层12L2中，电子和空穴的数量增多，其复合效率增大，从而第二发光层12L2的发光强度提高。由于第一发光层12L1和第二发光层12L2的发光强度均增大，所以发光单元12整体的发光强度提高。
在一实施例中，继续参照图12或图13，同一发光单元12中，第一子发光单元121中的第一载流子功能层(示例性的，可包括第一空穴辅助功能层12L41、第二空穴辅助功能层12L42或第三空穴辅助功能层12L43)、第二子发光单元122中的第一载流子功能层与第三子发光单元123中的第一载流子功能层分立设置。同一发光单元12中，第一子发光单元121中的第二载流子功能层(示例性的，可包括第一电子辅助功能层12L51、第二电子辅助功能层12L52和第三电子辅助功能层12L53)、第二子发光单元122中的第二载流子功能层与第三子发光单元123中的第二载流子功能层分立设置。
如此设置，可避免载流子在第一子发光单元121、第二子发光单元122和第 三子发光单元123之间相互传输，从而可避免给同一发光单元12中的第一子发光单元121、第二子发光单元122和第三子发光单元123分别提供不同的驱动电流时，不同的子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)相互影响。因此，便于实现第一子发光单元121、第二子发光单元122和第三子发光单元123的发光强度和发光颜色的精确控制。
在一实施例中，同一发光单元12中，至少部分第一子发光单元121中的第一载流子功能层、至少部分第二子发光单元122中的第一载流子功能层和至少部分第三子发光单元123中的第一载流子功能层连续设置。
在一实施例中，同一发光单元中，至少部分第一子发光单元121中的第二载流子功能层、至少部分第二子发光单元122中的第二载流子功能层和至少部分第三子发光单元123中的第二载流子功能层连续设置。
在一实施例中，同一发光单元12中，至少部分第一子发光单元121中的第一载流子功能层、至少部分第二子发光单元122中的第一载流子功能层和至少部分第三子发光单元123中的第一载流子功能层连续设置。并且，至少部分第一子发光单元121中的第二载流子功能层、至少部分第二子发光单元122中的第二载流子功能层和至少部分第三子发光单元123中的第二载流子功能层连续设置。
在一实施例中，参照图14和图15，同一发光单元12中，第一子发光单元121中的第一载流子功能层(示例性的，可包括第一空穴辅助功能层12L41、第二空穴辅助功能层12L42和第三空穴辅助功能层12L43)、第二子发光单元122中的第一载流子功能层和第三子发光单元123中的第一载流子功能层连续设置。同时，第一子发光单元121中的第二载流子功能层(示例性的，可包括第一电子辅助功能层12L51、第二电子辅助功能层12L52和第三电子辅助功能层12L53)、 第二子发光单元122中的第二载流子功能层和第三子发光单元123中的第二载流子功能层连续设置。
其中，载流子趋向于沿着电阻最小的路径传输。由于第一载流子功能层的横向电阻远远大于其自身的纵向电阻，第二载流子功能层的横向电阻也远远大于其自身的纵向电阻，因此，对于第一载流子功能层和第二载流子功能层而言，载流子趋向于沿着纵向传输路径P2传输，而不会沿着横向传输。因此，将同一发光单元12中，多个子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)的第一载流子功能层连续设置，或者第二载流子功能层连续设置，或者第一载流子功能层和第二载流子功能层分别连续设置，不会影响发光单元的发光强度和发光颜色。
此外，将同一发光单元12中，多个子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)的第一载流子功能层连续设置，还可以增大第一载流子功能层对应的掩模板的掩模开口面积。同理，多个子发光单元(包括第一子发光单元121、第二子发光单元122和第三子发光单元123)的第二载流子功能层连续设置，还可以增大第二载流子功能层对应的掩模板的掩模开口面积。从而有利于降低该掩模板的设计难度，同时，降低对应的第一载流子功能层和第二载流子功能层的制作难度，提高产品(包括发光单元、显示面板以及应用的显示装置)良率。
图16中仅示例性的示出了第二子发光单元122和第三子发光单元123分别包括两层第一载流子功能层(第一空穴辅助功能层12L41和第三空穴辅助功能层12L43)和两层第二载流子功能层(第一电子辅助功能层12L51和第三电子辅助功能层12L53)，第一子发光单元121不包括第三空穴辅助功能层12L43和第一电子辅助功能层12L51。第三空穴辅助层12L43在第二子发光单元122和第三 子发光单元123中连续设置。同时，第一电子辅助层12L51在第二子发光单元122和第三子发光单元123中连续设置，此仅为示例性的说明，而非限定。在其他实施方式中，还可以根据显示面板的实际需求，设置第三空穴辅助层12L43在第一子发光单元121和第三子发光单元123中连续设置，或者第一电子辅助层12L51在第一子发光单元121和第三子发光单元123中连续设置，本申请实施例对此不作限定。
此外，图12和图14中仅示例性的示出了三层第一载流子功能层、三层第二载流子功能层；图13、图15和图16中仅示例性的示出了两层第一载流子功能层和两层第二载流子功能层，此均仅为示例性的说明，而非限定。在其他实施方式中，还可以根据显示面板的实际需求，设置第一载流子功能层数量和第二载流子功能层的数量，本申请实施例对此不作限定。
本申请实施例还提供了一种显示装置。在一实施例中，参照图17，显示装置20包括上述实施方式提供的任一种显示面板10。因此，该显示装置20具有上述显示面板10所具有的有益效果，可参照上文理解，在此不再赘述。
示例性的，显示装置20可为手机、电脑以及智能可穿戴设备等显示装置，本申请实施例对此不作限定。
上述仅为本申请的较佳实施例及其所运用的技术原理。在不脱离本申请构思的情况下，本领域技术人员能够进行各种明显的变化、重新调整、相互结合和替代。而本申请的保护范围由所附的权利要求的保护范围决定。

Claims (13)

  1. 一种显示面板，包括：
    基板；
    设置在所述基板一侧且呈阵列排布的多个发光单元，每个发光单元包括第一子发光单元、第二子发光单元和第三子发光单元；
    其中，所述发光单元包括靠近所述基板设置的第一电极，与所述第一电极相对设置的第二电极，以及设置在所述第一电极与所述第二电极之间的第二发光层；
    至少所述第三子发光单元还包括至少一层第一发光层，所述至少一层第一发光层位于所述第二发光层与所述第一电极之间。
  2. 根据权利要求1所述的显示面板，其中，所述第一子发光单元和所述第二子发光单元的至少之一包括至少一层第一发光层。
  3. 根据权利要求2所述的显示面板，其中，所述第一子发光单元中的所述第一发光层的层数和所述第二子发光单元中的所述第一发光层的层数中的至少之一与所述第三子发光单元中的所述第一发光层的层数相等。
  4. 根据权利要求3所述的显示面板，其中，所述第一子发光单元中，所述第一发光层的发光波长小于所述第二发光层的发光波长；所述第二子发光单元中，所述第一发光层的发光波长小于所述第二发光层的发光波长；所述第三子发光单元中，所述第一发光层的发光波长小于或者等于所述第二发光层的发光波长。
  5. 根据权利要求4所述的显示面板，其中，所述第一发光层的发光颜色为蓝色；
    所述第一子发光单元中的所述第二发光层的发光颜色为红色，所述第二子发光单元中所述第二发光层的发光颜色为绿色，所述第三子发光单元中所述第 二发光层的发光颜色为蓝色。
  6. 根据权利要求2所述的显示面板，其中，所述发光单元还包括电荷产生层；
    所述电荷产生层位于相邻的所述第一发光层与所述第二发光层之间；
    当所述第一发光层的层数为至少两层时，所述电荷产生层还位于相邻的两层第一发光层之间。
  7. 根据权利要求6所述的显示面板，其中，所述第一子发光单元中的电荷产生层和所述第二子发光单元中的电荷产生层与所述第三子发光单元中的电荷产生层中的至少两者连续设置。
  8. 根据权利要求6所述的显示面板，其中，所述电荷产生层的厚度表示为A，10nm≤A≤30nm。
  9. 根据权利要求6所述的显示面板，其中，所述发光单元还包括第一载流子功能层和第二载流子功能层；
    所述第一载流子功能层位于所述第一电极与紧邻所述第一电极的第一发光层之间，以及位于所述第一发光层与紧邻所述第一发光层且靠近所述第一电极的所述电荷产生层之间，以及位于所述第二发光层与紧邻所述第二发光层的所述电荷产生层之间；
    所述第二载流子功能层位于所述第二电极与所述第二发光层之间，以及位于所述第一发光层与紧邻所述第一发光层且靠近所述第二电极的所述电荷产生层之间。
  10. 根据权利要求9所述的显示面板，其中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第一载流子功能层、至少部分所述第二子发光单元中的所述第一载流子功能层和至少部分所述第三子发光单元中的所述第 一载流子功能层连续设置。
  11. 根据权利要求9所述的显示面板，其中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第二载流子功能层、至少部分所述第二子发光单元中的所述第二载流子功能层和至少部分所述第三子发光单元中的所述第二载流子功能层连续设置。
  12. 根据权利要求9所述的显示面板，其中，同一所述发光单元中，至少部分所述第一子发光单元中的所述第一载流子功能层、至少部分所述第二子发光单元中的所述第一载流子功能层和至少部分所述第三子发光单元中的所述第一载流子功能层连续设置；并且
    至少部分所述第一子发光单元中的所述第二载流子功能层、至少部分所述第二子发光单元中的所述第二载流子功能层和至少部分所述第三子发光单元中的所述第二载流子功能层连续设置。
  13. 一种显示装置，包括权利要求1所述的显示面板。
PCT/CN2019/079691 2018-09-28 2019-03-26 显示面板和显示装置 Ceased WO2020062812A1 (zh)

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CN113328053A (zh) * 2021-05-20 2021-08-31 武汉华星光电技术有限公司 显示面板
KR20230111636A (ko) * 2022-01-17 2023-07-26 삼성디스플레이 주식회사 표시장치
WO2023206382A1 (zh) * 2022-04-29 2023-11-02 京东方科技集团股份有限公司 显示装置及显示面板
CN114899291B (zh) * 2022-07-12 2022-10-25 诺视科技(苏州)有限公司 用于半导体器件的像素单元及其制作方法、微显示屏
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CN116018000A (zh) * 2023-02-06 2023-04-25 固安翌光科技有限公司 一种显示装置
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