WO2019022039A1 - 銅銀合金の合成方法、導通部の形成方法、銅銀合金、および導通部 - Google Patents
銅銀合金の合成方法、導通部の形成方法、銅銀合金、および導通部 Download PDFInfo
- Publication number
- WO2019022039A1 WO2019022039A1 PCT/JP2018/027602 JP2018027602W WO2019022039A1 WO 2019022039 A1 WO2019022039 A1 WO 2019022039A1 JP 2018027602 W JP2018027602 W JP 2018027602W WO 2019022039 A1 WO2019022039 A1 WO 2019022039A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- silver
- crystal
- silver alloy
- plane
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
- C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
Definitions
- the present invention relates to a method of synthesizing a copper-silver alloy that can be easily synthesized at low temperature and in a short time, a method of forming a conductive portion, a copper-silver alloy, and a conductive portion.
- Patent Document 1 proposes a method for producing an electrically conducting portion capable of forming an electrically conducting portion in a low temperature range where the resin can be used as a base material in the formation of an electrically conducting portion mainly composed of copper. It is done. As a manufacturing method described in Patent Document 1, it is disclosed that after printing a copper ink on a substrate, heat treatment is performed in a temperature range of 60 to 300 ° C. for 10 to 60 minutes. Patent Document 1 also discloses a copper salt composed of a carboxylic acid having a reducing action and a copper ion, a coordinating compound for the purpose of stabilizing the reducing action, and metal silver or metal for the purpose of promoting the reducing action. An ink composition containing silver carboxylate is disclosed.
- Example 7 of the same document an ink composition having copper salt particles, hexamethyl imine, and silver particles is prepared, applied to a substrate, and then under an atmosphere in which nitrogen gas flows. It is described that the material is subjected to heat treatment at 140 ° C. for 30 minutes to form a conduction site.
- Patent Document 2 uses pulsed light or micro light using a composition including metal oxide particles having a flat shape, a reducing agent, and a binder resin in order to efficiently conduct the pattern of the composition printed on a substrate.
- a method of forming a conductive pattern is disclosed for irradiating a composition with a wave.
- a paste obtained by mixing flat copper oxide particles, a reducing agent and a resin is printed on a substrate, and the voltage is 250 V, the pulse width is 1600 ⁇ s, and the pulse energy is 3.47 J / cm. It is disclosed to single-shot two pulse waves.
- Patent Document 3 discloses a method of producing a copper-silver alloy which does not contain a eutectic of copper and silver. Specifically, a manufacturing method is disclosed in which particles of a copper-silver alloy having a particle diameter of 50 nm or less and containing no eutectic body are precipitated by mixing a fluid containing copper ions and silver ions with a fluid containing a reducing agent. It is done. Although the formation means of the conduction
- Patent Document 1 describes that metal particles that promote reduction of copper ions and composite particles of metal salts and particles of copper salts are not formed. Therefore, in the invention described in Patent Document 1, a composite method such as a method of alloying both particles is not adopted.
- Patent Document 1 describes that an electrical conducting member made of copper can be formed simply by performing a heat treatment for 10 to 60 minutes in a temperature range of 60 to 300 ° C. That is, it can be said that this heating condition is a condition where alloying of copper fine particles and silver fine particles is not performed. Therefore, the conducting member obtained by the manufacturing method described in Patent Document 1 is made of copper, and the resulting conducting member has a problem that the resistivity is increased by oxidation.
- Patent Document 2 discloses only a method of producing flat copper oxide particles, and it is unclear whether flat particles can be obtained by the same method for other metal oxide particles.
- flattening must be performed using a ball mill or the like, which complicates the manufacturing process.
- the purpose of irradiating pulsed light in Patent Document 2 is to remove the oxide on the particle surface together with the reducing agent.
- Patent Document 2 discloses that metal particles of an alloy may be used in combination, but it is not supposed to form an alloy of copper by pulsed light in the first place. Accordingly, since the conductive member obtained by the manufacturing method described in Patent Document 2 contains copper as a main component, the obtained conductive member has a problem that the resistivity is increased due to oxidation as in Patent Document 1.
- Patent Document 3 When it is going to form copper silver particles by a reduction method like patent document 3, it is difficult for copper and silver to cause a reduction reaction simultaneously by the difference of oxidation-reduction potential. For this reason, as disclosed in Patent Document 3, it is difficult to think that a copper-silver alloy can be obtained simply by mixing a fluid containing copper ions and silver ions with a fluid containing a reducing agent. Various measures are required to reduce the difference, and the process may be complicated.
- an object of the present invention is to provide a method of synthesizing a copper-silver alloy capable of easily synthesizing a copper-silver alloy at low temperature and in a short time, a method of forming a conductive portion, and a copper-silver alloy and a conductive portion. It is.
- the present inventors assumed that a copper-silver alloy is used in order to avoid the problem of oxidation by copper and the problem of migration by silver. Further, as in Patent Document 3, in order to form a copper-silver alloy without using a reducing agent, attention was paid to the behavior at the time of sintering of the copper-silver alloy. The present inventors have found that silver and copper fine crystal nuclei are generated, and copper and silver are diffused and grown from the crystal nuclei to form a copper-silver alloy.
- the present inventors focused on generating fine crystal nuclei of silver and copper to synthesize a copper-silver alloy, and deliberately studied a synthesis method by heating at a low heating temperature for a short time.
- the present inventors uniformly diffused in the ink by adding a silver salt as silver fine particles to be added, and generated a fine crystal nucleus of metallic copper and metallic silver at a predetermined heating temperature and heating time.
- a silver salt as silver fine particles to be added
- a fine crystal nucleus of metallic copper and metallic silver at a predetermined heating temperature and heating time.
- copper and silver can not be alloyed under the conditions applicable to wearable devices. It may also be effective to carry out long-term heating at low temperature for alloying, but heating for a long time is not desirable to simplify the manufacturing process. Even if a reduction method is used, the process is complicated to reduce the difference between the redox potentials of copper and silver.
- the crystal grain size of the copper-silver alloy is 0.1 ⁇ m or less, and the peak angle of the (111) plane of Cu and the peak angle of the (111) plane of pure Cu Deviation of 0.3% or more with respect to the peak angle of pure Cu (111) face, and the deviation between the peak angle of (111) face of Ag and the peak angle of (111) face of pure Ag It was also found that at least one of satisfying that at least 0.1% of the peak angle of (111) plane of pure Ag was satisfied.
- the knowledge which can suppress the oxidation of the crystal nucleus of copper was acquired by optimizing the conditions which produce
- the present invention obtained by these findings is as follows.
- a crystal nucleus synthesis step of forming a copper-silver alloy is as follows.
- the method of synthesizing a copper-silver alloy according to the above-mentioned (1) comprising applying a first heating to heat a coated member coated with a copper-silver ink at 70 to 300 ° C. for 1 to 300 minutes. .
- the second heating is performed by irradiating pulse nuclei having an irradiation time of 5 ⁇ s to 1 s and an energy density of 0.5 to 5.0 J / cm 2 to copper crystal nuclei and silver crystal nuclei
- a method of forming a conductive portion comprising the method of synthesizing a copper-silver alloy according to any one of (1) to (6).
- a copper-silver alloy characterized in that at least one of the deviations is 0.1% or more with respect to the peak angle of (111) plane of pure Ag.
- FIG. 1 is a diagram showing the results of XRD diffraction experiments in Comparative Example 1, Comparative Example 2 and Comparative Example 6, and Inventive Example 13 and Inventive Example 9.
- FIG. 2 is a surface SEM photograph of the conducting part in Comparative Example 6, Inventive Example 13 and Inventive Example 9,
- FIG. 2 (a) is a surface SEM photograph of Comparative Example 6, and
- FIG. 2 (b) is a surface of Inventive Example 13.
- FIG. 2 (c) is a surface SEM photograph of invention example 8.
- FIG. 3 is a view showing the results of alloying in Comparative Examples 3 to 7 and Comparative Examples 9 and 10.
- FIG. 4 is a view showing the results of alloying in the invention example 1, the invention examples 3 to 5, the invention example 9, the invention example 14 and the invention example 15.
- FIG. 5 shows a surface SEM photograph and a fracture surface of each of Inventive Example 9 and Comparative Reference Example in which metallic silver is melted at 1200 ° C. in an inert atmosphere, and then metallic copper is introduced and mixed for 30 minutes for alloying.
- the SEM photograph is shown
- Fig.5 (a) is a surface SEM photograph of the invention example 9
- FIG.5 (b) is the torn surface SEM photograph of the invention example 9
- FIG.5 (c) is a surface SEM of a comparative reference example.
- FIG. 5 (a) is a surface SEM photograph of a comparative reference example.
- FIG. 6 is a graph showing the relationship between the retention time and the resistance value when the samples of Inventive Example 9 and Inventive Example 10, and Comparative Examples 1 and 5 and Comparative Example 11 are kept at 180 ° C. in the atmosphere. .
- the method of synthesizing a copper-silver alloy of the present invention comprises (1) an ink preparation step of preparing a copper-silver ink by mixing copper salt particles, an amine solvent and silver salt particles; (3) from copper silver ink, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 ⁇ m or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 ⁇ m or less from a copper silver ink And (4) crystal nucleus synthesis step of synthesizing a copper crystal nucleus and a silver crystal nucleus. Each step will be described in detail.
- Copper salt particles The copper salt used in the synthesis method according to the present invention is acid and copper It consists of ions.
- the acid is not particularly limited as long as it can be dissolved in an amine solvent, and for example, copper carboxylate is desirable.
- copper carboxylate include copper formate microparticles, copper hydroxyacetate microparticles, copper glyoxylate microparticles, copper lactate microparticles, copper oxalate microparticles, copper tartrate microparticles, copper malate microparticles, and copper citrate microparticles.
- copper formate particles are preferable from the viewpoint of low cost.
- these may be used individually by 1 type and may use 2 or more types together. When 2 or more types are used together, the mixing ratio is arbitrary.
- the copper ion may be a monovalent to trivalent copper ion.
- the primary average particle size of the copper salt particles is not particularly limited because the copper salt particles dissolve in the amine-based solvent.
- the copper salt particles used in the present invention may be commercially available ones, may be one synthesized by a known method, and is not particularly limited.
- the manufacturing method is also not particularly limited.
- the amine-based solvent used in the synthesis method according to the present invention is not particularly limited, but copper salt particles and silver salt particles to be described later are easily dissolved and easily formed at the conductive portion.
- copper salt particles and silver salt particles to be described later are easily dissolved and easily formed at the conductive portion.
- aliphatic amines, aromatic amines, and cyclic amines are preferred so that they can be removed.
- aliphatic amines examples include alkylamines, alkanolamines, alkylenediamines, cyclic amines, amidine compounds and the like, among which 2-ethylhexylamine is preferred.
- aromatic amine examples include aniline, p-toluidine, 4-ethylaniline, N-methylaniline, N-methyl-p-toluidine, N-methyl-4-ethylaniline and the like.
- cyclic amines include pyrrolidine, pyrrole, piperidine, pyridine, hexamethyleneimine, imidazole, pyrazole, piperazine, N-methyl piperazine, N-ethyl piperazine, homopiperazine and the like.
- the amine solvent may be a commercially available one, or may be one synthesized by a known method.
- the silver salt used in the synthesis method according to the present invention comprises an acid and a silver ion.
- the acid is not particularly limited as long as it can be dissolved in an amine solvent, and for example, a carboxylic acid is desirable.
- silver carboxylate silver ⁇ -ketocarboxylate is preferable from the viewpoint of reducing the concentration of raw materials and impurities remaining at the time of metal silver formation.
- silver ⁇ -ketocarboxylates examples include silver 2-methylacetoacetate, silver acetoacetate, silver 2-ethylacetoacetate, silver propionyl acetate, silver isobutyryl acetate, silver pivaloyl acetate, silver caproyl acetate, silver 2-n-butylacetoacetate, And silver 2-benzylacetoacetate, silver benzoylacetate, silver pivaloylacetoacetate, silver llylacetoacetate, silver 2-acetylpivaloylacetate, silver 2-acetylisobutyrylacetate, or silver acetonedicarboxylate.
- the primary average particle size of the silver salt particles is not particularly limited because the silver salt particles are dissolved in the amine-based solvent, similarly to the primary average particle size of the copper salt particles.
- the silver salt particles may be used alone or in combination of two or more. When 2 or more types are used together, the mixing ratio is arbitrary.
- the copper salt particles used in the present invention may be commercially available ones, may be one synthesized by a known method, and is not particularly limited.
- the manufacturing method is also not particularly limited.
- the total amount of copper salt particles and silver salt particles is preferably 5 to 95% by mass with respect to the total mass of the copper-silver ink.
- the content of the amine-based solvent is preferably 5 to 50% by mass with respect to the total mass of the copper-silver ink.
- Dispersion Medium Further, in order to control the viscosity of the copper-silver ink, methanol, ethanol alcohols, ethers such as diethyl ether, esters such as methyl formate, fatty acid hydrocarbons such as n-hexane, and It may contain at least one aromatic hydrocarbon such as benzene.
- the content of the dispersion medium is preferably 0 to 90% by mass with respect to the total mass of the copper-silver ink.
- the mixing method is not particularly limited, and a method of mixing by rotating a stirrer or a stirring blade, etc., a method of mixing using a mixer, a triple roll, a kneader, a bead mill, etc. It may be appropriately selected from known methods such as a method of adding and mixing ultrasonic waves.
- a predetermined amount of copper salt is added to and mixed with an amine solvent, and then a predetermined amount of silver salt is added and mixed to prepare a copper-silver ink. desirable.
- the temperature at the time of mixing is not particularly limited as long as each compounded component is not deteriorated, but is preferably -5 to 60 ° C. Then, the temperature at the time of mixing may be appropriately adjusted according to the types and amounts of the components so that the mixture obtained by blending has a viscosity that facilitates stirring.
- the mixing time is not particularly limited as long as the components of the copper-silver ink do not deteriorate, and the mixing time is preferably 10 minutes to 1 hour.
- the viscosity of the copper-silver ink mixed in this manner may be any viscosity that can be printed, and is appropriately controlled by the coating method.
- the method of coating a copper-silver ink on a substrate is not particularly limited, and may be carried out by a known method.
- a screen printing method, a dip coating method, a spray coating method, a spin coating method, an inkjet method, a coating method using a dispenser, and the like can be mentioned.
- the application amount of the copper-silver ink applied to the substrate may be appropriately controlled in accordance with the desired film thickness of the conductive portion.
- the coated member may be solid, liquid or gas.
- examples include resists, resins, organic substances such as clothes, metals, ceramics, glasses, substrates, semiconductor elements, ice, wood, skin and the like, and mainly the surface of the substrate and the through holes can be exemplified, but are limited thereto It is not a thing.
- a preheating step of performing preheating for 0 to 10 minutes at 25 ° C. or more and less than 70 ° C. prior to the crystal nucleation step after the application step In the present invention, a part of amine solvents constituting the copper silver ink It is desirable to remove the dispersion medium prior to heating. Therefore, after the coating step, a preheating step of performing preheating at 25 ° C. or more and less than 70 ° C. for 0 to 10 minutes may be added before the crystal nucleation step.
- the preheating step may be performed continuously with the first heating as in the prior art, and when using a different heating apparatus for the first heating in the preheating step and the crystal nucleation step described later, the crystal nucleus
- the substrate may be cooled to room temperature prior to the forming step.
- the atmosphere in the preheating step may be either in the air or in an inert atmosphere because the heating temperature is less than 70 ° C. Note that crystal nuclei may not be generated in the preheating step, or may be slightly generated to such an extent that crystal nuclei can be controlled in the crystal nucleus generation step.
- Crystal nucleation step of generating at least one of copper crystal nuclei having a crystal grain size of 0.2 ⁇ m or less and silver crystal nuclei having a crystal grain size of 0.2 ⁇ m or less from a copper-silver ink Synthesis according to the present invention By applying the method, fine crystal nuclei of silver and copper are generated, and copper and silver diffuse and grow from the crystal nuclei to form an alloy. At this time, control of crystal nuclei is extremely important in alloy formation. If it is attempted to generate crystal nuclei more than necessary, depending on the generation conditions, crystal nuclei will be coarsened. On the other hand, if crystal nuclei are not sufficiently formed, alloying becomes difficult.
- a copper-silver alloy can be easily synthesized by the subsequent crystal nucleus synthesis step.
- the crystal nucleation step it is desirable that copper crystal nuclei and silver crystal nuclei be generated without the copper salt and silver salt in the copper-silver ink remaining.
- At least one of copper crystal nuclei and silver crystal nuclei may be generated in the crystal nucleation step. Even if only one crystal nucleus is generated, the other crystal nucleus can be generated in the crystal nucleus synthesis step described later to form a copper-silver alloy. In the crystal nucleation step of the present invention, it is preferable to generate both a copper crystal nucleus and a silver crystal nucleus.
- the grain size of the crystal nucleus needs to be 0.2 ⁇ m or less from the viewpoint of homogenization of the copper-silver alloy. If the grain size is within this range, the alloy can be synthesized easily by diffusion throughout the crystal nuclei by the crystal nucleus synthesis step described later. In addition, when there are a large number of crystal nuclei of the above particle diameter, the coarsening of the copper-silver alloy phase can be suppressed by the mutual diffusion growth, and a fine and homogeneous copper-silver alloy can be synthesized.
- the average particle size of copper crystal nuclei is preferably 0.1 ⁇ m or less, and the average particle size of silver crystal nuclei is preferably 0.1 ⁇ m or less.
- the lower limit of the average particle size is not particularly limited, but is preferably 10 nm or more. Within this range, crystal nuclei can be prevented from scattering at the time of irradiation with pulsed light.
- the average particle size of the crystal nuclei is obtained by taking 10 photographs of different places of the sample using a scanning electron microscope (SEM: Hitachi SU 8020 FE-SEM), and 100 pieces from each photograph, for a total of 1000 pieces.
- SEM scanning electron microscope
- the grain size of the crystal nucleus of the above was extracted, image analysis was performed, the projected area circle equivalent diameter of each grain was calculated, and it was determined by arithmetic mean.
- the heating temperature is preferably in the temperature range of 70 to 300.degree. If it is less than 70 ° C., generation of crystal nuclei necessary for alloying will be insufficient.
- the lower limit is more preferably 80 ° C. or higher.
- the upper limit is more preferably 200 ° C. or less, further preferably 160 ° C. or less, particularly preferably 140 ° C. or less, and most preferably 130 ° C. or less.
- the heating time of the first heating is desirably 1 to 300 minutes in order to control crystal nuclei. If it is less than one minute, generation of crystal nuclei necessary for alloying will be insufficient. 2 minutes or more are preferable and, as for a lower limit, 3 minutes or more are more preferable. On the other hand, if it exceeds 300 minutes, the manufacturing cost will increase, and the alloying may be hindered due to the oxidation of copper.
- the upper limit is preferably 100 minutes or less, more preferably 30 minutes or less, further preferably 10 minutes or less, and particularly preferably 9 minutes or less.
- the atmosphere for the first heating may be in the air or in an inert atmosphere such as nitrogen. From the viewpoint of suppressing the oxidation of copper, it is preferable to heat in an inert atmosphere.
- the heating temperature when the first heating is performed in the air, it is preferable to set the heating temperature to 70 to 140 ° C. and to set the heating time to 1 to 10 minutes from the viewpoint of suppressing the oxidation of copper. .
- the first heating is performed in an inert atmosphere such as nitrogen, it is not necessary to consider the oxidation of copper, so it may be within the above range.
- the heating apparatus in the first heating step is not particularly limited, and may be the same as the conventional one such as a hot plate or a heating furnace.
- the copper silver ink may be irradiated with pulsed light with reduced energy density.
- a cooling step of cooling the member to be coated to a temperature range of less than 60 ° C. before the crystal nucleus synthesis step after the crystal nucleation step In the present invention, the oxidation of copper is suppressed and the formation of coarse crystal nuclei is suppressed. In order to do this, it is preferable to cool the substrate to a temperature range of less than 60.degree. C. after the crystal nucleation step and before the crystal nucleus synthesis step described later. In addition, when the heating devices used for the first heating and the second heating are different, it is necessary to temporarily take out the sample after the crystal nucleation step, and this can be applied to the case where the cooling step is absolutely included.
- the cooling temperature is preferably 40 ° C. or less, and from the viewpoint of simplification of the production process, cooling to room temperature is particularly preferable.
- Crystal Nucleus Synthesis Step of Synthesizing Copper Crystal Nucleus and Silver Crystal Nucleus In the synthesis method according to the present invention, if a desired crystal nucleus is generated in the crystal nucleus generation step, the crystal nucleus is synthesized by the crystal nucleus synthesis step Is diffusion grown to easily synthesize a copper-silver alloy.
- the copper crystal nucleus and the silver crystal nucleus are irradiated with pulsed light having an irradiation time of 1 s or less and an energy density of 0.5 to 5.0 J / cm 2. It is preferable to do.
- pulsed light having an irradiation time of 1 s or less and an energy density of 0.5 to 5.0 J / cm 2. It is preferable to do.
- the lower limit of the irradiation time is 1 ⁇ s or more Is preferred. If the irradiation time is 1 ⁇ s or more, even if only one of the copper crystal nucleus and the silver crystal nucleus is generated in the crystal nucleation step, the other crystal nucleus is selected in the crystal nucleus synthesis step. It can be generated sufficiently. Moreover, in order to reduce manufacturing cost, it is preferable that the upper limit of irradiation time is 0.1 s or less.
- the number of times of irradiation is preferably 1 to 10 times, more preferably 1 to 5 times, and particularly preferably 1 time from the viewpoint of cost reduction and process simplification.
- the atmosphere of the second heating can be alloyed in the extremely short time as described above, the atmosphere is not particularly limited, and is preferably in the air from the viewpoint of process simplification.
- the energy density of pulsed light is 0.5 to 5.0 J / cm 2
- alloying can be achieved, but if the energy density is low and too short, diffusion growth may not be sufficient.
- the lower limit of the energy density is preferably 1.0 J / cm 2 or more.
- the upper limit of the energy density is preferably 4.0 J / cm 2 or less from the viewpoints of reducing the manufacturing cost and suppressing the scattering of crystal nuclei.
- the pulse light used in the present invention preferably has a wavelength of 1 m to 1 mm (frequency of 300 MHz to 300 GHz), for example.
- the irradiation time corresponds to the pulse width.
- the copper-silver alloy obtained by the synthesis method of the present invention has a small crystal grain size of silver and copper to such an extent that grain boundaries can not be recognized by a SEM photograph. Specifically, the crystal grain size of the copper-silver alloy is 0.1 ⁇ m or less.
- the peak angle obtained from the X-ray diffraction profile is determined, and the alloying is judged by the deviation from the peak of pure copper and / or the peak of pure silver.
- the copper-silver alloy obtained by the present invention since peaks derived from copper and silver are observed, both a silver phase and a copper phase are present.
- the copper-silver alloy synthesized according to the present invention is excellent in oxidation resistance and can suppress the occurrence of migration.
- the peak of pure copper and / or the deviation from the peak angle of pure silver refer to a copper-silver alloy composed of Cu and Ag, and the peak angle of (111) face of Cu and (111) face of pure Cu Deviation from the peak angle of at least 0.3% with respect to the peak angle of the (111) plane of pure Cu, and / or the peak angle of the (111) plane of Ag and the (111) plane of pure Ag It represents that at least one of the fact that the deviation with the peak angle of is at least 0.1% with respect to the peak angle of (111) plane of pure Ag is satisfied.
- the deviation between the peak angle of the (111) plane of Cu and the peak angle of the (111) plane of pure Cu is 0.3% or more with respect to the peak angle of the (111) plane of pure Cu
- the difference between the peak angle of (111) plane of (111) plane and the peak angle of (111) plane of pure Ag is 0.1% or more with respect to the peak angle of (111) plane of pure Ag.
- the difference between the peak angle of the (111) plane of Cu and the peak angle of the (111) plane of pure Cu is 0.812% or more with respect to the peak angle of the (111) plane of pure Cu and / or Ag If the difference between the peak angle of (111) plane of (111) plane and the peak angle of (111) plane of pure Ag is 0.231% or more with respect to the peak angle of (111) plane of pure Ag, further oxidation resistance And the occurrence of migration can be suppressed.
- the conductor of the present invention can be formed on a substrate.
- the conductive portion in the present invention represents a wire, a connection portion between a wire and a terminal, and the like.
- the wearable device it represents all parts of the conductive part.
- the conductive part obtained by the present invention exhibits excellent oxidation resistance and low resistivity, in spite of having a copper phase and a silver phase, in which both phases are finely dispersed uniformly.
- Inventive Example 2 a copper-silver ink was prepared in the same manner as described above except that 2-amino-2-methyl-1-propanol (manufactured by Wako Pure Chemical Industries, Ltd.) was introduced into a beaker.
- this substrate was preheated in the same atmosphere as the first heating in a heating furnace under the conditions shown in Table 1.
- Second Heating was performed by irradiating pulse wave 1, pulse wave 2 and pulse wave 3 shown below in the atmosphere using Pulse Forge 3300 manufactured by Novacentrix on the glass substrate after cooling.
- Pulse wave 1 Voltage: 300 V, pulse width: 2100 ⁇ s, pulse energy: 3.357 J / cm 2 : Single shot irradiation
- Pulse wave 2 Voltage: 240 V, pulse width: 2100 ⁇ s, pulse energy: 1.751 J / Cm 2 : 4 times irradiation, then, voltage: 300 V, pulse width: 2100 ⁇ s, pulse energy: 3.357 J / cm 2 : single shot irradiation-"Pulse wave 3": voltage: 240 V, pulse width: 2100 ⁇ s, pulse energy: 1.751 J / cm 2 : Single shot irradiation
- the thickness of the conductive pattern formed by the above was 25 ⁇ m.
- the peak angles of the Ag (111) plane and the Cu (111) plane are determined, and the deviation from the peak angle of pure silver is 0.3% or more of the peak angle of pure silver, and the peak angle of pure copper It was confirmed that copper and silver were alloyed when the deviation of the peak angle was 0.1% or more of the peak angle of pure copper. When it was alloyed, it evaluated as "(circle)", and when it was not alloyed, it evaluated as "x".
- Resistivity Mitsubishi Chemical Co., Ltd. product The resistivity was measured by 4-probe method using lozesta-GP MCP-T610 measurement apparatus.
- the four-terminal probe used for the measurement is an ESP probe (MCP-TP08P, No. 014052B).
- Comparative Examples 3 to 10 the copper-silver alloy could not be obtained because the second heating was not performed.
- Comparative Examples 3 and 4 since the heating temperature of the first heating was low and the organic component was not decomposed, the conductive pattern could not be formed, and the resistivity could not be measured.
- Comparative Examples 5 to 7, 9 and 10 although the heating temperature for the first heating was high and the organic components were sufficiently decomposed, the second heating was not performed, so the crystal nuclei were merely in physical contact. State, and showed a high resistance value.
- FIG. 1 is a diagram showing the results of XRD diffraction experiments in Comparative Example 1, Comparative Example 2 and Comparative Example 6, and Inventive Example 13 and Inventive Example 9.
- “pure Cu” is comparative example 1
- “pure Ag” is comparative example 2
- “140 ° C.-10 min” is comparative example 6
- “first heating + pulsed light (1751 mJ / cm) 2 ) is the invention example 13
- the "first heating + pulsed light (3357 mJ / cm 2 )" is the invention example 9.
- the deviation from the peak angle of the Ag (111) plane was (
- the deviation from the peak angle of the Cu (111) plane is (
- FIG. 2 is a surface SEM photograph of the conducting part in Comparative Example 6, Inventive Example 13 and Inventive Example 9,
- FIG. 2 (a) is a surface SEM photograph of Comparative Example 6, and
- FIG. 2 (b) is a surface of Inventive Example 13.
- FIG. 2C is a surface SEM photograph of invention example 9.
- the average particle diameter 10 photographs of places where the sample is different are taken, 100 particle diameters are extracted from each photograph, and the particle diameter of a total of 1000 crystal nuclei is extracted, and image analysis is performed. The equivalent diameter was calculated and calculated by arithmetic mean.
- FIG. 3 is a view showing the results of alloying in Comparative Examples 3 to 7 and Comparative Examples 9 and 10.
- FIG. 4 is a view showing the results of alloying in the invention example 1, the invention examples 3 to 5, the invention example 9, the invention example 14 and the invention example 15.
- the copper-silver alloy was not obtained regardless of the heating temperature and heating time of the first heating. For this reason, it has been found that an alloy can not be obtained merely by formation of crystal nuclei.
- the copper-silver alloy was obtained regardless of the heating condition of the first heating.
- FIG. 5 shows a surface SEM photograph and a fracture surface of each of Inventive Example 9 and Comparative Reference Example in which metallic silver is melted at 1200 ° C. in an inert atmosphere, and then metallic copper is introduced and mixed for 30 minutes for alloying.
- the SEM photograph is shown
- Fig.5 (a) is a surface SEM photograph of the invention example 9
- FIG.5 (b) is the torn surface SEM photograph of the invention example 9
- FIG.5 (c) is a surface SEM of a comparative reference example. It is a photograph
- FIG. 5 (a) is a surface SEM photograph of a comparative reference example.
- FIG. 6 is a graph showing the relationship between the retention time and the resistance value when the samples of Inventive Example 9 and Inventive Example 10, and Comparative Examples 1 and 5 and Comparative Example 11 are kept at 180 ° C. in the atmosphere. .
- the invention examples 9 and 10 are copper-silver alloys, they are difficult to oxidize and the increase in resistance value is suppressed.
- the synthesis method of the present invention can be simplified at a low temperature and in a short time as compared with conventional methods, and can form a conductive portion excellent in oxidation resistance. Therefore, the present invention is applicable to devices that require fine wiring, such as wearable devices.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
(1)銅塩粒子、アミン系溶剤、および銀塩粒子を混合して銅銀インクを調製するインク調製工程と、銅銀インクを被塗布部材に塗布する塗布工程と、銅銀インクから、結晶粒径が0.2μm以下の銅の結晶核及び結晶粒径が0.2μm以下の銀の結晶核の少なくとも一方を生成させる結晶核生成工程と、銅の結晶核および前記銀の結晶核を合成する結晶核合成工程と、を備えることを特徴とする銅銀合金の合成方法。
本発明の銅銀合金の合成方法は、(1)銅塩粒子、アミン系溶剤、および銀塩粒子を混合して銅銀インクを調製するインク調製工程、(2)銅銀インクを被塗布部材に塗布する塗布工程、(3)銅銀インクから、結晶粒径が0.2μm以下の銅の結晶核及び結晶粒径が0.2μm以下の銀の結晶核の少なくとも一方を生成させる結晶核生成工程、(4)銅の結晶核および銀の結晶核を合成する結晶核合成工程と、を備える。各工程を詳述する。
(1-1)銅塩粒子
本発明に係る合成方法で用いる銅塩は酸と銅イオンからなる。酸としては、アミン系溶剤に溶解可能なものであれば特に限定されず、例えばカルボン酸銅であることが望ましい。カルボン酸銅としては、例えば、ギ酸銅微粒子、ヒドロキシ酢酸銅微粒子、グリオキシル酸銅微粒子、乳酸銅微粒子、シュウ酸銅微粒子、酒石酸銅微粒子、リンゴ酸銅微粒子、及びクエン酸銅微粒子が挙げられる。中でも、低コストの観点からギ酸銅粒子が好ましい。また、これらは1種を単独で使用してもよく、2種以上を併用してもよい。2種以上を併用する場合には、混合比率は任意である。
銅塩粒子の一次平均粒子径は、銅塩粒子がアミン系溶剤に溶解するので特に限定するものではない。
本発明に係る合成方法で用いるアミン系溶剤としては特に限定するものではないが、銅塩粒子と後述する銀塩粒子を容易に溶解し、導通部の形成時に容易に除去することができるように、例えば、脂肪族アミン、芳香族アミン、及び環状アミンが好ましい。
本発明に係る合成方法で用いる銀塩は酸と銀イオンからなる。酸としては、アミン系溶剤に溶解可能なものであれば特に限定されず、例えばカルボン酸であることが望ましい。
銅塩粒子と銀塩粒子の混合比は、焼結後の銅:銀=5:95~95:5となるように混合することが好ましい。この範囲であれば、酸化およびマイグレーションを抑制することができ、加熱時の酸化およびマイグレーションを抑制することができる。また、銅塩粒子および銀塩粒子の合計量は、銅銀インクの全質量に対して5~95質量%であることが好ましい。アミン系溶剤の含有量は、銅銀インクの全質量に対して5~50質量%であることが好ましい。
更に、銅銀インクの粘度を制御するため、メタノールやエタノールアルコール類、ジエチルエーテルなどのエーテル類、ギ酸メチルなどのエステル類、n-ヘキサンなどの脂肪酸炭化水素類、およびベンゼンなどの芳香族炭化水素類の少なくとも1種を含有してもよい。分散媒の含有量は、銅銀インクの全質量に対して0~90質量%であることが好ましい。
混合方法は特に限定されず、撹拌子又は撹拌翼等を回転させて混合する方法、ミキサー、三本ロール、ニーダー又はビーズミル等を使用して混合する方法、超音波を加えて混合する方法等、公知の方法から適宜選択すればよい。
本発明に係る合成方法において、銅銀インクを基材に塗布する方法は特に限定されることがなく、公知の方法によって行えばよい。例えば、スクリーン印刷法、ディップコーティング法、スプレー塗布法、スピンコーティング法、インクジェット法、ディスペンサーでの塗布法等が挙げられる。塗布の形状としては面状であっても、ドット状であっても、問題は無く、特に限定されない。基材に塗布する銅銀インクの塗布量としては、所望する導通部の膜厚に応じて適宜制御すればよい。
本発明では、銅銀インクを構成する一部のアミン系溶剤や分散媒を加熱前に除去することが望ましい。そこで、塗布工程後、結晶核生成工程前に、25℃以上70℃未満で0~10分間予備加熱を行う予備加熱工程を加入してもよい。予備加熱工程は、従来と同様に第1加熱と連続して行ってもよく、また、予備加熱工程と後述する結晶核生成工程での第1加熱で異なる加熱装置を用いる場合には、結晶核生成工程前に基板が室温まで冷却されてもよい。予備加熱工程の雰囲気は、加熱温度が70℃未満であるため、大気中、不活性雰囲気中のいずれであってもよい。なお、予備加熱工程で結晶核は生成されないか、もしくは結晶核生成工程で結晶核が制御できる程度にわずかに生成されていてもよい。
本発明に係る合成方法を適用することによって、銀と銅の微細な結晶核が生成し、その結晶核を起点として銅と銀が拡散成長して合金が形成される。この際、結晶核の制御が合金形成において極めて重要になる。結晶核を必要以上に生成させようとすると、生成条件によっては結晶核の粗大化を招く。一方、結晶核が十分に形成されないと、合金化が困難になる。
本発明では、銅の酸化を抑制するとともに粗大な結晶核の生成を抑制するため、結晶核生成工程後、後述する結晶核合成工程前に、基板を60℃未満の温度域まで冷却することが好ましい。また、第1加熱と第2加熱で用いる加熱装置が異なる場合、結晶核生成工程後に試料を一旦外部に取り出す必要があり、どうしても冷却工程が入ってしまうような場合にも適用することができる。冷却温度は、好ましくは40℃以下であり、製造工程の簡略化の観点から、室温まで冷却することが特に好ましい。
本発明に係る合成方法は、結晶核生成工程で所望の結晶核が生成されていれば、結晶核合成工程により結晶核が拡散成長して容易に銅銀合金を合成することができる。
本発明の合成方法によって得られた銅銀合金は、SEM写真によって粒界が認識できない程度にまで銀および銅の結晶粒径が小さい。具体的には、銅銀合金の結晶粒径が0.1μm以下である。
本発明の合成方法により基板に導通部を形成することができる。本発明における導通部とは、配線、配線と端子との接続部などを表す。例えば、ウェアラブルデバイスにおいて、導通する部分のすべての部分を表す。
まず、ビーカーに2-エチルヘキシルアミン(和光純薬工業株式会社製)を導入した。次に、ギ酸銅(II)四水和物(和光純薬工業株式会社製、型番:LKJ3210、一次平均粒子径:20μm)を添加し、マグネチックスターラにて30分間混合し、ギ酸銅を溶解した。その後、アセト酢酸銀を添加し、マグネチックスターラにて30分間混合してアセト酢酸銀を溶解して銅銀インクを調製した。ギ酸銅、2-エチルヘキシルアミン、アセト酢酸銀、及びエタノールの含有量は、表1に示す通りである。
表1に示す銅銀インクを、スクリーン印刷にて、2cm×2cm角のパターンをポリイミドフィルム(厚さ25μm)(東レ・デュポン株式会社製、型番:カプトン100N)上に印刷した。
次に、この基板を表1に示す条件の加熱炉で第1加熱と同じ雰囲気にて予備加熱を行った。
予備加熱後のガラス基板を予備加熱で用いた加熱炉に入れたまま、表1に示す条件で第1加熱を行った。加熱後のCu:Ag質量比は、銅銀インク中の銅塩含有量および銀塩含有量から算出した。
加熱炉からガラス基板を取り出し、室温まで冷却した。
冷却後のガラス基板に、Novacentrix社製PulseForge3300を用いて、下記に示すパルス波1、パルス波2およびパルス波3を大気中で照射することにより第2加熱を行った。
・「パルス波2」:電圧:240V、パルス幅:2100μs、パルスエネルギー:1.751J/cm2:4回照射、その後、電圧:300V、パルス幅:2100μs、パルスエネルギー:3.357J/cm2:単発照射
・「パルス波3」:電圧:240V、パルス幅:2100μs、パルスエネルギー:1.751J/cm2:単発照射
以上により形成した導電パターンの厚さは25μmであった。
(1)合金化の確認
合成後のパターンをXRD(X線回折 Rigaku社製、湾曲IPX線回折装置 RINT RAPIDII、測定条件:標準ホルダーを用いて連続スキャン測定、X線管球:Cu(40kV/30mA)、コリメーター:f0.8mm、ω:20°、f:1/sec、スキャン時間:360sec、レシービングスリット(RS): 0.15mm)にて測定した。本実施例では、Ag(111)面およびCu(111)面のピーク角度を求め、純銀のピーク角度とのずれが純銀のピーク角度の0.3%以上であり、かつ、純銅のピーク角度とのずれが純銅のピーク角度の0.1%以上である場合に、銅と銀が合金化していると確認した。合金化されている場合には「○」と評価し、合金化されていない場合には「×」と評価した。
三菱化学株式会社製:lozesta-GP MCP-T610測定装置を用いて、4端子法にて抵抗率を測定した。測定に用いた4端子プローブは、ESPプローブ(MCP-TP08P、No.014052B)である。
図1は、比較例1、比較例2および比較例6、並びに発明例13および発明例9における、XRD回折実験結果を示す図である。図1中、「pure Cu」は比較例1であり、「pure Ag」は比較例2であり、「140℃-10min」は比較例6であり、「第1加熱+パルス光(1751mJ/cm2)」は発明例13であり、「第1加熱+パルス光(3357mJ/cm2)」は発明例9である。
Claims (10)
- 銅塩粒子、アミン系溶剤、および銀塩粒子を混合して銅銀インクを調製するインク調製工程と、
前記銅銀インクを被塗布部材に塗布する塗布工程と、
前記銅銀インクから、結晶粒径が0.2μm以下の銅の結晶核及び結晶粒径が0.2μm以下の銀の結晶核の少なくとも一方を生成させる結晶核生成工程と、
前記銅の結晶核および前記銀の結晶核を合成する結晶核合成工程と、
を備えることを特徴とする銅銀合金の合成方法。 - 前記結晶核生成工程では、前記銅銀インクが塗布された被塗布部材を70~300℃で1~300分間加熱する第1加熱を施す、請求項1に記載の銅銀合金の合成方法。
- 前記結晶核合成工程では、照射時間が1s以内でありエネルギー密度が0.5~5.0J/cm2であるパルス光を前記銅の結晶核及び前記銀の結晶核に照射する第2加熱を施す、請求項1又は2に記載の銅銀合金の合成方法。
- 前記結晶核生成工程後、前記結晶核合成工程前に、前記被塗布部材を60℃未満の温度域まで冷却する、請求項1~3のいずれか1項に記載の銅銀合金の合成方法。
- 更に、前記銅銀インクは分散媒を含有する、請求項1~4のいずれか1項に記載の銅銀合金の合成方法。
- 前記塗布工程後、前記結晶核生成工程前に、25℃以上70℃未満で0~10分間の予備加熱を行う予備加熱工程を備える、請求項1~5のいずれか1項に記載の銅銀合金の合成方法。
- 請求項1~6のいずれか1項に記載の銅銀合金の合成方法を備えることを特徴とする導通部の形成方法。
- CuおよびAgからなる銅銀合金であって、
前記銅銀合金の結晶粒径が0.1μm以下であり、
前記Cuの(111)面のピーク角度と純Cuの(111)面のピーク角度とのずれが前記純Cuの(111)面のピーク角度に対して0.3%以上であること、および、前記Agの(111)面のピーク角度と純Agの(111)面のピーク角度とのずれが前記純Agの(111)面のピーク角度に対して0.1%以上であること、の少なくとも一方を満たすことを特徴とする銅銀合金。 - 前記銅銀合金は、前記Cuの(111)面のピーク角度と純Cuの(111)面のピーク角度とのずれが前記純Cuの(111)面のピーク角度に対して0.3%以上であるとともに、前記Agの(111)面のピーク角度と純Agの(111)面のピーク角度とのずれが前記純Agの(111)面のピーク角度に対して0.1%以上である、請求項8に記載の銅銀合金。
- 請求項8または9に記載の銅銀合金を有する導通部。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018565905A JP6499385B1 (ja) | 2017-07-25 | 2018-07-24 | 銅銀合金の合成方法、導通部の形成方法、銅銀合金、および導通部 |
EP18838388.9A EP3660185A4 (en) | 2017-07-25 | 2018-07-24 | METHOD FOR SYNTHETIZING A COPPER-SILVER ALLOY, METHOD FOR FORMING A PIPE PART, COPPER-SILVER ALLOY AND PIPE PART |
CN202011191614.4A CN112301346B (zh) | 2017-07-25 | 2018-07-24 | 铜银合金的合成方法、导通部的形成方法、铜银合金、以及导通部 |
CN201880049672.8A CN111032912B (zh) | 2017-07-25 | 2018-07-24 | 铜银合金的合成方法、导通部的形成方法、铜银合金、以及导通部 |
US16/634,002 US11217359B2 (en) | 2017-07-25 | 2018-07-24 | Method for synthesizing copper-silver alloy, method for forming conduction part, copper-silver alloy, and conduction part |
KR1020207005102A KR102163511B1 (ko) | 2017-07-25 | 2018-07-24 | 구리 은 합금의 합성 방법, 도통부의 형성 방법, 구리 은 합금 및 도통부 |
PH12020500186A PH12020500186A1 (en) | 2017-07-25 | 2020-01-24 | Method for synthesizing copper-silver alloy, method for forming conduction part, copper-silver alloy, and conduction part |
US17/397,500 US20210366627A1 (en) | 2017-07-25 | 2021-08-09 | Method for synthesizing copper-silver alloy, method for forming conduction part, copper-silver alloy, and conduction part |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017144038 | 2017-07-25 | ||
JP2017-144038 | 2017-07-25 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/634,002 A-371-Of-International US11217359B2 (en) | 2017-07-25 | 2018-07-24 | Method for synthesizing copper-silver alloy, method for forming conduction part, copper-silver alloy, and conduction part |
US17/397,500 Division US20210366627A1 (en) | 2017-07-25 | 2021-08-09 | Method for synthesizing copper-silver alloy, method for forming conduction part, copper-silver alloy, and conduction part |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019022039A1 true WO2019022039A1 (ja) | 2019-01-31 |
Family
ID=65041423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/027602 WO2019022039A1 (ja) | 2017-07-25 | 2018-07-24 | 銅銀合金の合成方法、導通部の形成方法、銅銀合金、および導通部 |
Country Status (8)
Country | Link |
---|---|
US (2) | US11217359B2 (ja) |
EP (1) | EP3660185A4 (ja) |
JP (1) | JP6499385B1 (ja) |
KR (1) | KR102163511B1 (ja) |
CN (2) | CN111032912B (ja) |
PH (1) | PH12020500186A1 (ja) |
TW (1) | TWI668709B (ja) |
WO (1) | WO2019022039A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006183110A (ja) * | 2004-12-28 | 2006-07-13 | Mitsui Mining & Smelting Co Ltd | 銀銅複合粉及び銀銅複合粉の製造方法 |
WO2013073241A1 (ja) | 2011-11-16 | 2013-05-23 | エム・テクニック株式会社 | 固体銀銅合金 |
JP2013196881A (ja) | 2012-03-19 | 2013-09-30 | Osaka Univ | 導電パターン形成方法及び光照射またはマイクロ波加熱による導電パターン形成用組成物 |
WO2014156489A1 (ja) * | 2013-03-26 | 2014-10-02 | 株式会社カネカ | 導電性フィルム基板、透明導電性フィルムおよびその製造方法、ならびにタッチパネル |
JP2015147929A (ja) | 2015-03-06 | 2015-08-20 | 東ソー株式会社 | 導電性インク組成物、電気的導通部位の製造方法、及びその用途 |
JP2017041504A (ja) * | 2015-08-18 | 2017-02-23 | 国立研究開発法人産業技術総合研究所 | フレキシブル抵抗器及びその製造方法、並びに印刷配線装置 |
JP2017074702A (ja) * | 2015-10-14 | 2017-04-20 | 凸版印刷株式会社 | 印刷版、印刷版の製造方法、印刷物、および印刷物の製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030148024A1 (en) | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
US8506849B2 (en) * | 2008-03-05 | 2013-08-13 | Applied Nanotech Holdings, Inc. | Additives and modifiers for solvent- and water-based metallic conductive inks |
CN102675960B (zh) | 2011-03-08 | 2015-08-05 | 深圳市尊业纳米材料有限公司 | 一种纳米铜锡合金导电油墨及其制备方法和使用方法 |
CN102270514A (zh) * | 2011-05-03 | 2011-12-07 | 华中科技大学 | 一种均相导电浆料 |
KR101275856B1 (ko) * | 2011-06-21 | 2013-06-18 | 한국과학기술연구원 | 금속 산화물 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터 제조 방법 |
US20140158196A1 (en) * | 2011-07-25 | 2014-06-12 | Yoshiaki Kurihara | Element and photovoltaic cell |
US9732401B2 (en) | 2011-11-16 | 2017-08-15 | M. Technique Co., Ltd. | Solid metal alloy |
EP2826575B1 (en) | 2012-03-16 | 2024-08-07 | M Technique Co., Ltd. | Production method of solid gold-nickel alloy nanoparticles |
CN102867595B (zh) * | 2012-09-26 | 2015-12-09 | 江阴市电工合金有限公司 | 高耐磨铜银合金接触线及其生产方法 |
CN103320642B (zh) * | 2013-06-15 | 2015-04-08 | 山东亨圆铜业有限公司 | 铁路电气化用铜银合金接触导线的制备方法 |
CN104407735B (zh) * | 2014-11-11 | 2018-05-22 | 长沙市宇顺显示技术有限公司 | 触摸屏引线导电线路及其制作方法和触屏手机 |
CN105921737B (zh) * | 2016-04-28 | 2018-01-19 | 中南大学 | 一种铜银复合粉的制备方法和导电胶 |
-
2018
- 2018-07-23 TW TW107125313A patent/TWI668709B/zh active
- 2018-07-24 JP JP2018565905A patent/JP6499385B1/ja active Active
- 2018-07-24 CN CN201880049672.8A patent/CN111032912B/zh active Active
- 2018-07-24 EP EP18838388.9A patent/EP3660185A4/en active Pending
- 2018-07-24 WO PCT/JP2018/027602 patent/WO2019022039A1/ja unknown
- 2018-07-24 KR KR1020207005102A patent/KR102163511B1/ko active IP Right Grant
- 2018-07-24 CN CN202011191614.4A patent/CN112301346B/zh active Active
- 2018-07-24 US US16/634,002 patent/US11217359B2/en active Active
-
2020
- 2020-01-24 PH PH12020500186A patent/PH12020500186A1/en unknown
-
2021
- 2021-08-09 US US17/397,500 patent/US20210366627A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006183110A (ja) * | 2004-12-28 | 2006-07-13 | Mitsui Mining & Smelting Co Ltd | 銀銅複合粉及び銀銅複合粉の製造方法 |
WO2013073241A1 (ja) | 2011-11-16 | 2013-05-23 | エム・テクニック株式会社 | 固体銀銅合金 |
JP2013196881A (ja) | 2012-03-19 | 2013-09-30 | Osaka Univ | 導電パターン形成方法及び光照射またはマイクロ波加熱による導電パターン形成用組成物 |
WO2014156489A1 (ja) * | 2013-03-26 | 2014-10-02 | 株式会社カネカ | 導電性フィルム基板、透明導電性フィルムおよびその製造方法、ならびにタッチパネル |
JP2015147929A (ja) | 2015-03-06 | 2015-08-20 | 東ソー株式会社 | 導電性インク組成物、電気的導通部位の製造方法、及びその用途 |
JP2017041504A (ja) * | 2015-08-18 | 2017-02-23 | 国立研究開発法人産業技術総合研究所 | フレキシブル抵抗器及びその製造方法、並びに印刷配線装置 |
JP2017074702A (ja) * | 2015-10-14 | 2017-04-20 | 凸版印刷株式会社 | 印刷版、印刷版の製造方法、印刷物、および印刷物の製造方法 |
Non-Patent Citations (2)
Title |
---|
See also references of EP3660185A4 |
SEIZO NAGASAKIMAKOTO HIRABAYASHI: "Binary Alloy Phase Diagrams", 30 May 2013, AGNE GIJUTSU CENTER INC., pages: 4 |
Also Published As
Publication number | Publication date |
---|---|
US20210366627A1 (en) | 2021-11-25 |
EP3660185A4 (en) | 2020-08-05 |
JPWO2019022039A1 (ja) | 2019-07-25 |
US20200381136A1 (en) | 2020-12-03 |
TWI668709B (zh) | 2019-08-11 |
PH12020500186A1 (en) | 2020-09-14 |
TW201909198A (zh) | 2019-03-01 |
CN111032912A (zh) | 2020-04-17 |
CN112301346B (zh) | 2023-02-28 |
JP6499385B1 (ja) | 2019-04-10 |
US11217359B2 (en) | 2022-01-04 |
KR20200024331A (ko) | 2020-03-06 |
EP3660185A1 (en) | 2020-06-03 |
CN111032912B (zh) | 2021-03-09 |
KR102163511B1 (ko) | 2020-10-08 |
CN112301346A (zh) | 2021-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8999204B2 (en) | Conductive ink composition, method for manufacturing the same, and method for manufacturing conductive thin layer using the same | |
JP3764349B2 (ja) | 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法 | |
JPWO2009078448A1 (ja) | 銅導体膜及びその製造方法、導電性基板及びその製造方法、銅導体配線及びその製造方法、並びに処理液 | |
WO2012157704A1 (ja) | 銅粉末、銅ペースト、導電性塗膜の製造方法及び導電性塗膜 | |
JP2008198595A (ja) | 金属微粒子インクペースト及び有機酸処理金属微粒子 | |
KR101151366B1 (ko) | 도전성 입자 및 이의 제조방법 | |
JP6404614B2 (ja) | コアシェル型金属微粒子の製造方法、コアシェル型金属微粒子、導電性インクおよび基板の製造方法 | |
WO2011048937A1 (ja) | 銅系ナノ粒子高濃度分散液を用いた導体膜とその製造方法 | |
JP7139590B2 (ja) | 導体形成用組成物、並びに接合体及びその製造方法 | |
JP5424545B2 (ja) | 銅微粒子及びその製造方法、並びに銅微粒子分散液 | |
KR101329081B1 (ko) | 산화안정성이 우수한 코어-쉘 구조의 금속 나노입자의 제조방법 | |
WO2021125161A1 (ja) | 銀ペースト及びその製造方法並びに接合体の製造方法 | |
JP5369456B2 (ja) | インクジェット用低粘度分散液 | |
JP6499385B1 (ja) | 銅銀合金の合成方法、導通部の形成方法、銅銀合金、および導通部 | |
JP2014029845A (ja) | 導電性ペーストの製造方法 | |
JP2018170228A (ja) | 導体形成用組成物、並びに接合体及びその製造方法 | |
JP6947280B2 (ja) | 銀ペースト及びその製造方法並びに接合体の製造方法 | |
KR20190064605A (ko) | 접합재 및 그것을 사용한 접합 방법 | |
JP6118193B2 (ja) | 分散性ニッケル微粒子スラリーの製造方法 | |
KR20170019157A (ko) | 저온 소성용 구리 나노잉크 제조를 위한 구리 나노 입자 제조방법 | |
WO2020004342A1 (ja) | 銀ペースト及び接合体の製造方法 | |
JP7199285B2 (ja) | 銀パラジウム合金粉末およびその利用 | |
JP7340179B2 (ja) | 導体の製造方法、配線基板の製造方法及び導体形成用組成物 | |
JPWO2016139967A1 (ja) | ニッケル粒子、その製造方法及び導電性ペースト |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2018565905 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18838388 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20207005102 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2018838388 Country of ref document: EP Effective date: 20200225 |