WO2018188360A1 - Led芯片、led发光基板、显示装置及其控制方法 - Google Patents

Led芯片、led发光基板、显示装置及其控制方法 Download PDF

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WO2018188360A1
WO2018188360A1 PCT/CN2017/114888 CN2017114888W WO2018188360A1 WO 2018188360 A1 WO2018188360 A1 WO 2018188360A1 CN 2017114888 W CN2017114888 W CN 2017114888W WO 2018188360 A1 WO2018188360 A1 WO 2018188360A1
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led chip
light
current
led
display
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PCT/CN2017/114888
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English (en)
French (fr)
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王慧娟
王美丽
吕振华
王飞
杨泽洲
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to CN201710238220.1A priority patent/CN106816502B/zh
Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Publication of WO2018188360A1 publication Critical patent/WO2018188360A1/zh

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    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
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    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H01L33/26Materials of the light emitting region
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    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract

一种LED芯片、LED发光基板、显示装置及其控制方法。该LED芯片包括:N型半导体层(10)、P型半导体层(30)、以及位于N型半导体层(10)和P型半导体层(30)之间的量子阱层(20)。该量子阱层(20)由氮化铟镓制成,其中,铟原子在氮化铟镓中的摩尔比大于等于0.3。

Description

LED芯片、LED发光基板、显示装置及其控制方法
本申请要求于2017年4月12日提交的中国专利申请号201710238220.1的优先权,该中国专利申请以其整体通过引用并入于此。
技术领域
本公开涉及LED显示技术领域,尤其涉及LED芯片、LED发光基板、显示装置及其控制方法。
背景技术
LED(Light Emitting Diode,发光二极管)属于一种半导体二极管,并且是一种依靠半导体PN结的单向导电性而发光的光电元件。LED是目前世界范围市场上广泛使用的照明元件,并且具有体积小、亮度高、耗电量低、发热少、使用寿命长、环境友好等优点。此外,LED还具有丰富多彩的颜色种类,并且深受消费者的喜爱。
作为背光源,LED芯片在手机、电视机等需要背光显示的电子产品中发挥着不可或缺的作用。随着电子产品尺寸的不断缩小,需要LED芯片的尺寸也能够大幅减小,从而能够在较小的尺寸范围内实现更强且更稳定的显示亮度。
Micro LED(微LED)是指LED芯片微缩化和矩阵化技术。具体地,对于Micro LED,在一个芯片上集成高密度的微小尺寸的LED芯片阵列,其中每一个LED芯片可定址并且单独驱动点亮。以这样的方式,能够将相邻两个LED芯片的像素点距离从毫米级降低至微米级,从而提高显示效果。同时,Micro LED还具有节能高效、解析度高、体积小、薄型化等优点。
发明内容
本公开的实施例提供了LED芯片、LED发光基板、显示装置及其控制方法,以便解决或者至少缓解以上提及的技术问题中的一个或多个。
根据本公开的一方面,提供了一种LED芯片,包括:N型半导体层、量子阱层和P型半导体层,其中,量子阱层位于N型半导体层和P型半导体层之间。此外,量子阱层由氮化铟镓制成,其中,铟原子在氮化铟镓中的摩尔比大于等于0.3。
可选地,在具体实施例中,铟原子在氮化铟镓中的摩尔比为0.4。
进一步地,在本公开的实施例中,LED芯片还包括衬底层,并且该衬底层上设置有缓冲层。在这样的情况下,N型半导体层、量子阱层和P型半导体层整体设置在缓冲层上。
根据本公开的另一方面,提供了一种LED发光基板。该LED发光基板包括:多个上述LED芯片,以及电路板,其中,LED芯片设置在电路板上。具体地,电路板包括衬底基板以及设置在衬底基板上以用于驱动LED芯片的驱动电路。
可选地,在具体实施例中,电路板包括CMOS基板或TFT基板。
根据本公开的再一方面,还提供一种显示装置。该显示装置包括上述LED发光基板,以及像素单元的阵列,每一个像素单元包括多个亚像素单元。具体地,LED发光基板上的每一个LED芯片位于一个亚像素单元内,并且LED发光基板的驱动电路用于向各个LED芯片传输电流,以使得LED芯片发出相应波长的光。
可选地,在由本公开的实施例提供的显示装置中,每一个像素单元至少包括蓝色亚像素单元,并且在与每一个蓝色亚像素单元对应的LED芯片的出光侧还设置有蓝色滤光层。
可选地,在上述显示装置的具体实施例中,每一个像素单元还包括红色亚像素和绿色亚像素。此外,在与每一个红色亚像素单元对应的LED芯片的出光侧设置有红色滤光层,并且在与每一个绿色亚像素单元对应的LED芯片的出光侧设置有绿色滤光层。
进一步地,根据本公开的实施例,显示装置还包括沿LED发光基板的出光方向依次设置的下偏光单元、液晶层和上偏光单元,其中,下偏光单元的透过轴方向与上偏光单元的透过轴方向相互垂直或平行。
可选地,在具体实施例中,下偏光单元和/或上偏光单元为金属线栅。
可选地,在其它实施例中,下偏光单元为金属线栅,并且金属线栅设置在每一个LED芯片的出光侧。
根据本公开的又一方面,还提供一种用于控制显示装置以实现彩色显示的方法。具体地,该显示装置包括:如上文所述的LED发光基板;像素单元的阵列,每一个像素单元包括蓝色亚像素单元、绿色亚 像素单元和红色亚像素单元;以及分别设置在与每一个蓝色、红色和绿色亚像素单元对应的LED芯片的出光侧的蓝色滤光层、红色滤光层和绿色滤光层。此外,LED发光基板的每一个LED芯片位于一个对应的亚像素单元内,并且LED发光基板的驱动电路用于向各个LED芯片传输电流,以使得LED芯片发出相应波长的光。该控制方法包括:向设置在红色亚像素单元内的LED芯片输入第一电流,第一电流的电流值范围小于0.1mA;向设置在绿色亚像素单元内的LED芯片输入第二电流,第二电流的电流值范围在25mA至100mA之间;以及向设置在蓝色亚像素单元内的LED芯片输入第三电流,第三电流的电流值大于0.5mA。
可选地,根据本公开的实施例,在上述控制方法中,第一电流的电流值为0.1mA,第二电流的电流值为60mA,并且第三电流的电流值为8mA。
进一步可选地,根据本公开的实施例,在上述控制方法中,第一电流、第二电流和第三电流的占空比的比值为120∶1∶4。
附图说明
为了更清楚地说明本公开的实施例中的技术方案,下面将对实施例的描述中需要使用的附图作简单地介绍。显而易见地,下面描述中的附图仅仅是本公开的一些实施例。对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的实施例。
图1为根据本公开的实施例的LED芯片的截面示意图;
图2为示出了根据本公开的实施例的LED芯片中发射光的波长如何随输入的驱动电流的变化而变化的光谱图;
图3为根据本公开的实施例的LED发光基板的结构示意图;
图4为根据本公开的实施例的显示装置的结构示意图;
图5为根据本公开的实施例的显示装置的一个像素单元内,设置在与蓝色亚像素单元对应的LED芯片的出光侧的蓝色滤光层的结构示意图;
图6为根据本公开的实施例的显示装置的一个像素单元内,分别设置在与红色亚像素单元和绿色亚像素单元对应的LED芯片的出光侧的红色滤光层和绿色滤光层的结构示意图;
图7为根据本公开的一个实施例的包括下偏光单元、液晶层和上偏光单元的显示装置的结构示意图;
图8为根据本公开的另一个实施例的包括下偏光单元、液晶层和上偏光单元的显示装置的结构示意图;
图9为根据本公开的实施例的用于控制显示装置以实现彩色显示的方法的流程图;以及
图10为根据本公开的实施例的用于控制显示装置以实现彩色显示的方法中,第一电流、第二电流和第三电流的占空比关系的示意图。
具体实施方式
下面将结合本公开的实施例中的附图,对本公开的实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本公开保护的范围。
在下面的描述中,分别采用以下附图标记来指代各种组件:10-N型半导体层;11-下偏光单元;12-上偏光单元;13-液晶层;20-量子阱层;30-P型半导体层;40-衬底层;50-缓冲层;60-LED芯片;70-电路板;80-LED发光基板;91-蓝色滤光层;92-红色滤光层;93-绿色滤光层;A-亚像素单元;A1-蓝色亚像素单元;A2-红色亚像素单元;以及A3-绿色亚像素单元。
根据本公开的实施例,提供了一种LED芯片。如图1所示,该LED芯片包括:N型半导体层10、量子阱层20和P型半导体层30。具体地,量子阱层20位于N型半导体层10和P型半导体层30之间。此外,量子阱层20还由氮化铟镓制成,其中,铟原子在氮化铟镓中的摩尔比大于等于0.3。
LED(发光二极管)主要是由PN结组成,并且具有单向导电性。具体地,LED的发光原理可以简单地如下总结。在向LED加正向电压之后,从P区注入到N区的空穴和从N区注入到P区的电子,在PN结附近的数微米内分别与N区的电子和P区的空穴复合。由此,在电子和空穴消失的同时产生光子,从而产生了自发辐射的荧光。在不同的半导体材料中,电子和空穴所处的能量状态(带隙)不同,因此电子和空穴复合时释放出的能量多少也将不同。电子和空穴之间的能量 越大,产生的光子的能量就越高。此外,光子的能量还与光的颜色对应。由于不同的材料具有不同的带隙,因此能够发出不同颜色的光。LED芯片是一种固态的半导体器件,并且能够实现LED的发光显示。
需要说明的是,在根据本公开的实施例的LED芯片中,N型半导体层10、量子阱层20和P型半导体层30的形成顺序不仅限于如图1中所示情况,即,由下向上依次为N型半导体层10、量子阱层20和P型半导体层30。相反地,在其它实施例中,也可以由下向上依次设置P型半导体层30、量子阱层20和N型半导体层10。本领域技术人员可以根据具体使用要求进行设置。
此外,还需要指出的是,在量子阱层20由氮化铟镓材料制成并且铟原子在氮化铟镓中的摩尔比大于等于0.3的情况下,铟原子在氮化铟镓中的摩尔比较高。如果使用这种量子阱层20制作LED芯片那么在通入驱动电流时,由LED芯片发出的光将会随着驱动电流的增高而产生蓝移现象。这意味着,发射光的波长将随着驱动电流的增大而逐渐变小,即,显示光的颜色由红色逐渐向绿色变化。
根据本公开的实施例,提供了一种LED芯片,包括:N型半导体层、量子阱层和P型半导体层。此外,量子阱层由氮化铟镓制成,其中,铟原子在氮化铟镓中的摩尔比大于等于0.3。也就是说,选用氮化铟镓来形成LED芯片中的量子阱层,并且将铟原子在氮化铟镓中的摩尔比设置为大于等于0.3。以这样的方式,在将由LED芯片制作的发光基板应用于显示装置中时,能够通过调整输入到LED芯片的电流值的大小来控制LED芯片发出的光的颜色。由此,在应用于显示装置时,可以实现彩色显示。
可选地,在根据本公开的实施例的LED芯片中,铟原子在氮化铟镓中的摩尔比为0.4。
这意味着,不仅使用氮化铟镓材料来形成量子阱层20,而且还使铟原子在氮化铟镓中的摩尔比为0.4。以这样的方式制作而成的LED芯片在通入驱动电流时的光谱变化在图2中示出,其示出了发射光的波长如何随驱动电流的增加而变化。由图2中的虚线箭头可见,当驱动电流由0.1mA逐渐增至60mA时,发射光产生蓝移现象。也就是说,发射光的波长随着驱动电流的增大而逐渐变小。如图2所示,光波长由600nm移动至550nm,并且光的颜色由红色逐渐变为绿色。
进一步地,如图1所示,在本公开的实施例中,LED芯片还包括衬底层40,并且衬底层40上设置有缓冲层50。具体地,N型半导体层10、量子阱层20和P型半导体层30作为整体而设置在缓冲层50上。
衬底层40通常利用以下三种材料来形成:蓝宝石(Al2O3)、硅(Si)或碳化硅(SiC)。假设利用蓝宝石(Al2O3)材料制作衬底层40。此时,首先可以在衬底层40上形成缓冲层50,并且然后再在缓冲层50上形成N型半导体层10、量子阱层20和P型半导体层30。具体地,在形成上述外延结构时,通常采用金属有机物化学气相沉积(Metal-Organic Chemical Vapor Deposition,简称MOCVD)的方式。当然,本领域技术人员应当理解到,在以上过程中也可以采用其它制作方式,并且本公开的实施例在这一方面不受限制。
根据本公开的另一方面,提供一种LED发光基板。该LED发光基板包括多个上述LED芯片60。如图3所示,LED发光基板包括3个上述LED芯片60,以及电路板70。该电路板70包括衬底基板以及设置在衬底基板上以用于驱动LED芯片60的驱动电路。此外,LED芯片60设置在电路板70上。
电路板70包括衬底基板以及设置在衬底基板上的驱动电路,并且LED芯片60设置在电路板70上。在这样的情况下,通过电路板70上的驱动电路向LED芯片60输入驱动电流,以控制LED芯片60的发光。
需要说明的是,在将根据本公开的实施例的LED芯片60应用于Micro LED(微LED)中时,LED芯片60将以高密度集成为芯片阵列。此时,如果每一个LED芯片60的尺寸小于50微米,那么每一个LED芯片60的尺寸将会非常小。在这样的情况下,通常在缓冲层50的位置处剥离的LED芯片60,并且然后将所剥离的LED芯片60转移至电路板70上,从而与对应的驱动电路相连通。在缓冲层50处进行剥离的方式能够保护缓冲层50上方的芯片结构在剥离过程中不受破坏。由此,转移至电路板70上的LED芯片60不包括衬底层40。当每一个LED芯片60的尺寸为100微米以上时,如图3所示,通常会将包括一部分厚度的衬底层40的LED芯片60一起切割。在此之后,将带有衬底层40的LED芯片60转移至电路板70上,并且与对应的驱动电路相连通。以这样的方式,在连接到驱动电路并且发光时,带有衬底层 40的LED芯片60的功能更加稳定。
可选地,在具体实施例中,电路板70包括CMOS基板或TFT基板。
例如,当将本公开的实施例提供的LED发光基板应用于OLED显示装置中时,电路板70可以为TFT基板。此时,通过成膜、显影、剥离、曝光、刻蚀等工艺在衬底基板上制作各层以形成TFT基板。在此之后,剥离LED芯片60并且将其转移至TFT基板上。由此,可以通过在TFT基板上制作的驱动电路来向LED芯片60输入驱动电流。
根据本公开的再一方面,提供了一种显示装置。如图4所示,显示装置包括上述LED发光基板80,以及像素单元的阵列,其中每一个像素单元包括多个亚像素单元。进一步地,LED发光基板80上的每一个LED芯片60设置在一个对应的亚像素单元A内,并且LED发光基板80的驱动电路用于向各个LED芯片60传输电流,以使得LED芯片60发出相应波长的光。
例如,参照图4,在显示装置中,LED发光基板80的电路板70为TFT基板,并且在TFT基板上通过横纵交叉的栅线(图4中的G1、G2、G3、G4…)和数据线(图4中的D 1、D2、D3、D4…)界定出多个亚像素单元A。LED发光基板80上的每一个LED芯片60设置在一个对应的亚像素单元A内。TFT基板上的驱动电路可以通过扫描来单独定址和控制每一个LED芯片60,并且向设置在不同亚像素单元A内的LED芯片60输入驱动电流。需要指出的是,此处的驱动电流的电流值可以相同也可以不同。在此之后,每一个LED芯片60根据输入的驱动电流而发出相应波长的光。由此,在设置于每一个亚像素单元A内的LED芯片60具有相同结构的情况下,可以通过调整向每一个LED芯片60输入的驱动电流的电流值,控制显示装置以实现彩色显示。
可选地,如图5所示,在本公开的实施例中,显示装置包括至少三个原色亚像素单元,特别地,包括蓝色亚像素单元。此外,在与每一个蓝色亚像素单元A1对应的LED芯片60的出光侧还设置有蓝色滤光层91。
在本公开的实施例中,LED芯片60的光谱始终包含有蓝光成分。此时,在与每一个蓝色亚像素单元A1对应的LED芯片60的出光侧设置蓝色滤光层91。以这样的方式,通过向与蓝色亚像素单元A1对应 的LED芯片60输入如图2所示的光谱范围内的任意电流值,使得LED芯片60能够发光。然后,发出的光经过蓝色滤光层91进行滤光。由此,使得与蓝色亚像素单元A1对应的LED芯片60最终向外发出蓝色光,而其它颜色的光均被蓝色滤光层91阻挡。
优选的,如图6所示,上述至少三个原色亚像素单元还包括红色亚像素单元和绿色亚像素单元。此外,在与每一个红色亚像素单元A2对应的LED芯片60的出光侧还设置有红色滤光层92,并且在与每一个绿色亚像素单元A3对应的LED芯片60的出光侧还设置有绿色滤光层93。
在这样的情况下,通过控制向LED芯片60输入的电流值,特别地,向LED芯片60输入低电流值(如图2所示,输入电流0.1mA),使得LED芯片60能够发射红光。以类似方式,通过向LED芯片60输入较高电流值(如图2所示,输入电流60mA),使得LED芯片60能够发射绿光。以这样的方式,借助于对应的蓝色滤光层91、红色滤光层92和绿色滤光层93的滤光作用,使得LED芯片60的出光侧能够最终显示蓝光、红色和绿色。由此,通过对LED芯片60输入不同大小的电流值,可以实现红、绿、蓝三种原色的显示,并且进而使得根据本公开的实施例的显示装置能够实现全彩色显示。
例如,参照图6,显示装置的每一个像素单元包括红色亚像素单元A2、绿色亚像素单元A3和蓝色亚像素单元A1。此时,设置在每一个红色亚像素单元A2内的LED芯片60将在出光侧发出红色光,设置在每一个绿色亚像素单元A3内的LED芯片60将在出光侧发出绿色光,并且设置在每一个蓝色亚像素单元A1内的LED芯片60将在出光侧发出为蓝色光。通过对每一个像素单元内的红色亚像素单元A2、绿色亚像素单元A3和蓝色亚像素单元A1进行发光控制,能够在显示装置上显示出所需的彩色画面。另外,LED芯片60的光谱中始终包含蓝光成分,这可能导致在红色亚像素单元A2内发出的红光和在绿色亚像素单元A3内发出的绿光的纯度较差,从而影响显示装置的彩色显示效果。因此,如图6所示,在与每一个红色亚像素单元A2对应的LED芯片60的出光侧还可以设置红色滤光层92,其对在红色亚像素单元A2内发出的光进行滤光,并且阻挡除红光以外的光。同样地,在与每一个绿色亚像素单元A3对应的LED芯片60的出光侧设置绿色滤光层93, 其对在绿色亚像素单元A3内发出的光进行滤光,并且阻挡除绿光以外的光。这样一来,能够提高每一个亚像素单元A中发出的光的纯度,并且进而提高显示装置的彩色显示效果。
还需要说明的是,在根据本公开的实施例的显示装置中,蓝色滤光层91、红色滤光层92以及绿色滤光层93可以为滤光片,也可以为能够使特定波长的光通过而阻挡其它波长的光的任何材料和形式。本公开在这一方面不受限制。
进一步地,根据本公开的实施例,显示装置还可以包括液晶显示装置。在这样的情况下,如图7所示,显示装置还将包括沿LED发光基板80的出光方向依次设置的下偏光单元11、液晶层13和上偏光单元12,其中,下偏光单元11的透过轴方向与上偏光单元12的透过轴方向相互垂直或平行。
如图7所示,当显示装置为液晶显示装置时,沿LED发光基板80的出光方向将依次设置有下偏光单元11、液晶层13和上偏光单元12。此时,由LED发光基板80发出的光线将首先经过下偏光单元11。在此之后,只有偏振方向与下偏光单元11的透过轴方向相同的部分光才能够通过下偏光单元11进入液晶层13中。接着,在经过液晶层13中的液晶分子的偏转作用之后,该部分光射向上偏光单元12。然后,只有偏振方向与上偏光单元12的透过轴方向相同的部分光能够通过上偏光单元出射,从而实现显示。
需要说明的是,在本公开的实施例中,下偏光单元11与上偏光单元12的透过轴方向可以相互垂直,也可以相互平行。例如,当下偏光单元11与上偏光单元12的透过轴方向相互垂直时,液晶层13中的液晶分子以TN(Twisted Nematic,扭曲向列型)显示模式进行排列。对于TN显示模式,在无外加电压的情况下,通过下偏光单元11的光理论上能够全部由上偏光单元12出射。因此,显示装置的背光将投射为“常白模式”。反之,当下偏光单元11与上偏光单元12的透过轴方向相互平行时,在无外加电压的情况下,背光将投射为“常黑模式”。
还要指出的是,在根据本公开的实施例的显示装置中,上偏光单元12和下偏光单元11可以为偏光片,或者也可以为其它结构,只要能够使偏振方向与透过轴方向相同的光线透过即可。
此外,还需要说明的是,液晶层13中的液晶分子通常设置在两个 基板之间,并且侧面通过胶体粘贴封闭,以避免液晶分子泄露。在本公开的实施例中,并不要求上偏光单元12和下偏光单元11相对于两个基板的任何特殊定位。例如,如图7所示,上偏光单元11可以设置于液晶层13上侧的基板之外。可替换地,上偏光单元11也可以设置在液晶层13上侧的基板的内侧,只要能够保证由LED发光基板80出射的光依次经过下偏光单元11、液晶层13和上偏光单元12即可。
可选地,在根据本公开的实施例的显示装置中,下偏光单元11和/或上偏光单元13为金属线栅。
以这样的方式,当下偏光单元11和/或上偏光单元13为金属线栅时,可以通过纳米压印等方式,直接将金属线栅集成在其它基板上。例如,对于下偏光单元11,可以直接用纳米压印的方法集成在LED发光基板80上,从而不必再增设偏光片层。由此,降低了显示装置的厚度,并且促进了显示装置的轻薄化。
可选地,如图8所示,下偏光单元11为金属线栅,并且金属线栅设置在每一个LED芯片60的出光侧。
在这样的情况下,参照图8,只需要通过纳米压印等方式在每一个LED芯片60的出光侧制作金属线栅,即可使得LED芯片60能够出射偏振光。此时,从每一个LED芯片60出射的光的偏振方向与金属线栅的栅条延伸方向相同。同时,借助于在LED芯片60的出光侧设置的金属线栅,还能够对LED芯片60出射的光线进行过滤。由此,在除LED芯片60以外的其它部分不必再制作金属线栅,从而节省了金属线栅的制作材料,并且简化了制作工艺。
根据本公开的又一方面,提供一种用于控制上述显示装置以实现彩色显示的方法。如图9所示,该方法包括:S101、向设置在红色亚像素单元A2内的LED芯片60输入第一电流,第一电流的电流值范围小于0.1mA;S102、向设置在绿色亚像素单元A3内的LED芯片60输入第二电流,第二电流的电流值范围在25mA至100mA之间;以及S103、向设置在蓝色亚像素单元A1内的LED芯片60输入第三电流,第三电流的电流值大于0.5mA。
需要说明的是,在根据本公开的实施例的用于实现彩色显示的控制方法中,并不要求上述步骤S101-S103以任何特定的次序来执行。事实上,这些步骤S101-S103可以同时进行,也可以是以任意的先后 顺序。上文列出的步骤顺序只是作为示例,并且步骤的先后顺序不会影响本公开的控制方法的实现。
具体地,在上述控制方法中,向设置在红色亚像素单元A2内的LED芯片60输入第一电流。如图2所示,当第一电流的电流值小于0.1mA时,LED芯片60可以发出红色光。此外,向设置在绿色亚像素单元A3内的LED芯片60输入第二电流。如图2所示,当第二电流的电流值为25mA至100mA之间的任意电流值时,LED芯片60可以发出绿色光。进一步地,向设置在蓝色亚像素单元A1内的LED芯片60输入第三电流。此时,由于根据本公开的实施例的LED芯片60的光谱始终包含蓝光成分,因此第三电流可以为如图2所示的光谱范围内的任意值。此时,设置在蓝色亚像素单元A1内的LED芯片60将发出光,并且该光在通过蓝色滤光层91后可以显示蓝色光。如果第三电流的电流值过低,那么在蓝色亚像素单元A1内显示的光强将过低。因此,在本公开的实施例中,限定第三电流的电流值大于0.5mA。以这样的方式,通过控制向每一个亚像素单元输入的电流,即可使得每一个像素单元A呈现出相应的色彩,并且由此使显示装置实现彩色显示。
对于LED芯片60来说,输入的电流值越大,其显示的光强度必然越大。因此,在上述显示装置中,虽然能够实现彩色显示,但是其中红色光的强度往往会远小于绿色光的强度。这使得彩色显示的效果较差,并且影响显示装置整体显示的色调,从而导致最终显示的颜色发生失真、变色等问题。为了解决这一问题,在本公开的实施例中,可以调节第一电流的占空比与第二电流的占空比的比值,从而平衡红色光与绿色光之间的光强差。由此,提高彩色显示的准确性,并且使得显示装置呈现较佳的显示效果。
此外,典型地,液晶层13在电压控制下能够发生相应角度的偏转。因此,除了上文所述的通过占空比的调整来平衡不同颜色光的光强之外,在显示装置为液晶显示装置时,还可以通过控制液晶层13中对应于每一个像素单元的液晶分子的偏转,对每一个像素单元最终显示出的光亮度和色调进行进一步的调整,从而提高显示装置彩色显示的效果。
可选地,在本公开的实施例中,向设置在红色亚像素单元A2内的LED芯片60输入的第一电流可以选择为具有0.1mA的电流值;向设 置在绿色亚像素单元A3内的LED芯片60输入的第二电流可以选择为具有60mA的电流值;并且向设置在蓝色亚像素单元A1内的LED芯片60输入的第三电流可以选择为具有8mA的电流值。
当第一电流的电流值为0.1mA时,设置在红色亚像素单元A2内的LED芯片60发出的光具有较高的红光比例并且纯度较好。同样地,当第二电流的电流值为60mA时,设置在绿色亚像素单元A3内的LED芯片60发出的光具有较高的绿光比例并且纯度较好。此外,当第三电流的电流值设置为8mA时,一方面保证了设置在蓝色亚像素单元A1内的LED芯片60具有充足的发光强度,并且另一方面还降低了第三电流的功耗。
可选地,如图10所示,第一电流、第二电流和第三电流的占空比的比值为120∶1∶4。
参照图10,对于每一个像素单元A,在将第一电流的电流值设置为0.1mA、第二电流的电流值设置为60mA、并且将第三电流的电流值设置为8mA的情况下,第一电流、第二电流和第三电流的占空比的比值将为120∶1∶4。以这样的方式,能够得到最佳的白平衡条件,从而降低显示装置发生色彩偏差的可能性,并且进一步提高显示装置的彩色显示效果和色彩真实性。
以上所述,仅为本公开的具体实施方式。然而,本公开的保护范围并不局限于此。任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,可容易想到的各种变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以随附权利要求的保护范围为准。

Claims (14)

  1. 一种LED芯片,包括:
    N型半导体层、量子阱层和P型半导体层,其中
    所述量子阱层位于所述N型半导体层与所述P型半导体层之间,并且
    所述量子阱层由氮化铟镓制成,其中,铟原子在氮化铟镓中的摩尔比大于等于0.3。
  2. 根据权利要求1所述的LED芯片,其中
    所述铟原子在氮化铟镓中的摩尔比为0.4。
  3. 根据权利要求1所述的LED芯片,还包括:衬底层,所述衬底层上设置有缓冲层,其中
    所述N型半导体层、所述量子阱层和所述P型半导体层整体设置在所述缓冲层上。
  4. 一种LED发光基板,包括:
    多个如权利要求1-3中任一项所述的LED芯片;以及
    电路板,其中
    所述LED芯片设置在所述电路板上,并且
    所述电路板包括衬底基板和设置在所述衬底基板上以用于驱动所述LED芯片的驱动电路。
  5. 根据权利要求4所述的LED发光基板,其中
    所述电路板包括CMOS基板或TFT基板。
  6. 一种显示装置,包括:
    如权利要求4或5所述的LED发光基板,以及
    像素单元的阵列,每一个像素单元包括多个亚像素单元,其中
    所述LED发光基板的每一个LED芯片位于一个亚像素单元内,并且
    所述LED发光基板的驱动电路用于向各个LED芯片传输电流,以使得所述LED芯片发出相应波长的光。
  7. 根据权利要求6所述的显示装置,其中
    每一个像素单元至少包括蓝色亚像素单元,并且
    在与每一个蓝色亚像素单元对应的LED芯片的出光侧还设置有蓝 色滤光层。
  8. 根据权利要求7所述的显示装置,其中
    每一个像素单元还包括:红色亚像素单元和绿色亚像素单元,并且
    在与每一个红色亚像素单元对应的LED芯片的出光侧还设置有红色滤光层,而且在与每一个绿色亚像素单元对应的LED芯片的出光侧还设置有绿色滤光层。
  9. 根据权利要求7所述的显示装置,还包括:
    沿所述LED发光基板的出光方向依次设置的下偏光单元、液晶层和上偏光单元,其中,所述下偏光单元的透过轴方向与所述上偏光单元的透过轴方向相互垂直或平行。
  10. 根据权利要求9所述的显示装置,其中
    所述下偏光单元和所述上偏光单元中的至少一个包括金属线栅。
  11. 根据权利要求10所述的显示装置,其中
    所述下偏光单元包括金属线栅,并且
    所述金属线栅设置在每一个LED芯片的出光侧。
  12. 一种用于控制显示装置以实现彩色显示的方法,其中,所述显示装置包括:
    如权利要求4或5所述的LED发光基板,
    像素单元的阵列,每一个像素单元包括蓝色亚像素单元、绿色亚像素单元和红色亚像素单元,以及
    分别设置在与每一个蓝色、红色和绿色亚像素单元对应的LED芯片的出光侧的蓝色滤光层、红色滤光层和绿色滤光层,其中
    所述LED发光基板的每一个LED芯片位于一个对应的亚像素单元内,其中,所述LED发光基板的驱动电路用于向各个LED芯片传输电流,以使得所述LED芯片发出相应波长的光,并且
    所述方法包括:
    向设置在红色亚像素单元内的LED芯片输入第一电流,所述第一电流的电流值范围小于0.1mA;
    向设置在绿色亚像素单元内的LED芯片输入第二电流,所述第二电流的电流值范围在25mA至100mA之间;以及
    向设置在蓝色亚像素单元内的LED芯片输入第三电流,所述第三 电流的电流值大于0.5mA。
  13. 根据权利要求12所述的方法,其中
    所述第一电流的电流值为0.1mA,
    所述第二电流的电流值为60mA,并且
    所述第三电流的电流值为8mA。
  14. 根据权利要求13所述的方法,其中
    所述第一电流、第二电流和第三电流的占空比的比值为120∶1∶4。
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