WO2018165994A1 - 一种蓝宝石亚微米级切面的激光高精加工方法 - Google Patents

一种蓝宝石亚微米级切面的激光高精加工方法 Download PDF

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WO2018165994A1
WO2018165994A1 PCT/CN2017/078039 CN2017078039W WO2018165994A1 WO 2018165994 A1 WO2018165994 A1 WO 2018165994A1 CN 2017078039 W CN2017078039 W CN 2017078039W WO 2018165994 A1 WO2018165994 A1 WO 2018165994A1
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laser
sapphire
point
irradiation
workpiece
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季凌飞
燕天阳
李琳
安娜
林真源
王文豪
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Beijing University of Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/54—Glass

Definitions

  • the invention relates to the field of laser non-ablative cutting processing of hard and brittle transparent materials, in particular to a laser high precision processing method for sub-micron sapphire cut surfaces.
  • Sapphire is an alumina single crystal with a Mohs hardness second only to diamonds. Due to its special mechanics, thermal, electrical and excellent radiation resistance, thermal conductivity and stable chemical properties, it is widely used in the defense industry, aerospace cutting-edge technology research and civil applications.
  • the traditional machining method mainly uses diamond wire saw for sapphire cutting. The processing speed, processing freedom, processing quality and precision are low.
  • the contact cutting tools such as saw wire have limited life and high loss.
  • laser cutting technology has high energy density and no contact characteristics, which can effectively avoid the limitation of cutting contact stress of mechanical tools.
  • the laser cutting technology with hot ablation as the main feature can not effectively solve the crack, slag, cracking and other damage problems, seriously affecting the cutting depth, slit width, surface roughness and cutting freedom. Path selection and cutting efficiency, etc.
  • the sapphire fine cutting technology presents an urgent and extremely difficult challenge. Laser cutting depth, slitting taper and cutting surface quality have all broken.
  • Chinese invention patent application 201510239300.X discloses obtaining a crack direction and offset in sapphire laser cutting, and then adjusting the laser processing position according to the crack direction and the offset and completing the processing of the remaining scribe line.
  • the patent cutting principle is still based on the laser.
  • Thermal ablation cutting, cut for the front side and sapphire chip with back electrode processing, does not involve cutting surface processing accuracy.
  • the sapphire processing method disclosed in the Chinese invention patent application CN201410204028.7 is a composite technology which combines four sequence processes of nanosecond laser heat treatment, ultrasonic chemical corrosion pretreatment, picosecond laser precision processing and ultrasonic abrasive grain polishing treatment. The four processes are performed sequentially, not simultaneously; the four processes have long operating times and are cumbersome.
  • Chinese invention patent application 201210290741.9 discloses using a laser having a pulse width of picosecond (10-12 s) and femtosecond (10-15 s) to focus on a surface of a transparent material, and then incident to form a waveguide structure to control the laser along a direction perpendicular to the surface of the material. Move at a constant speed to form a waveguide plane.
  • the waveguide region is related to the refractive index change region of the material, and there is no breakdown damage to the material.
  • the embodiment of the patent is glass, the glass is amorphous, and the sapphire described in this patent is a single crystal material having a hardness much higher than that of glass.
  • Chinese invention patent application 201410657880.X discloses the use of a 30-55W picosecond laser to remove the sapphire panel by galvanometer scanning, which is a laser marking process for sapphire surface, and does not involve cutting depth and precision.
  • Chinese invention patent applications 201410379877.6, 201410380104.X and 201410380147.8 disclose a method, apparatus and apparatus for performing filament formation on a transparent material by a laser, by which a plurality of different focal points are produced by a distributed focus lens assembly, but the main focus does not reside on the material to be processed, Filamenting produces holes of a particular depth and width.
  • Maren, Germany -Jungemann et al. used a tightly focused femtosecond laser nonlinear effect to form microchannels on or in the surface of sapphire, and then chemically ultrasonically form a hollow microstructure (J. Laser Micro Nanoengineering, 2010, 5(2): 145-149.
  • the laser processing depth is limited by the influence of the laser focal depth, and the follow-up ultrasonic chemical processing must be performed due to the tight focus mode of the femtosecond laser.
  • the method overcomes the limitation of the processing depth by compensating the power and the method of raising the focus, and simultaneously uses the picosecond laser to irradiate the micro-thermal effect on the chemical corrosion, and the stationary irradiation member obtains the separation of the sapphire sample along the processing path.
  • the present invention provides a laser high-precision machining method for sub-micron-sized sapphire sections.
  • the present invention provides a laser high-precision machining method for a sub-micron-sized sapphire cut surface, comprising:
  • Step 1 According to the high transmittance of sapphire to a certain wavelength, the corresponding wavelength laser beam is incident into the interior of the sapphire and focused on the lower surface of the sapphire workpiece;
  • Step 2 placing the sapphire processing part and the fixture holding the sapphire processing part together in a container containing a chemical etching liquid, the upper surface of the sapphire processing part is flush with the liquid surface of the chemical etching liquid, and is placed close to the upper surface of the sapphire processing part.
  • the lower surface of the sapphire workpiece does not touch the bottom of the container for a sheet having a high transmittance at the incident wavelength and only serves as a light guide;
  • Step 3 irradiating the sapphire workpiece according to step 2 with a picosecond pulse width laser, and setting the laser processing power according to the threshold of the self-focusing effect before the light is turned on, and calculating and determining the loss of the laser incident sapphire workpiece due to the micro-absorption.
  • the energy value is compensated for the set laser processing power value;
  • the relationship between the Fourier heat conduction theory and the control of the laser energy focused on the lower surface of the sapphire workpiece exceeds the threshold for phase change or electronic state removal of the sapphire workpiece and excites the self-focusing nonlinear effect, resulting in a linewidth much smaller than the diameter of the focused beam.
  • Step 4 Raise the laser focus position, and guide the ultra-fine phase change point or the electronic state removal point to extend from the lower surface of the sapphire workpiece to the upper surface along the laser incident direction to form a line width ultra-fine phase change or an electronic state removal trace;
  • Step 5 measuring step 4 forms a line width of the stitch, and calculates a number of points of laser irradiation required to complete the processing path according to the length of the processing path, the line width of the line, and the lateral overlap ratio of the stitch;
  • Step 6 According to the laser frequency and the number of pulses at a single point of the laser irradiation, set a matching laser beam moving rate; the constraint condition of the laser beam moving rate needs to ensure that the pulse number at a single point of the set laser irradiation is injected into the irradiation at all. After the point, the beam is moved to the next point;
  • Step 7 software positioning steps 3 and 4 complete the ultra-fine phase change or electronic state removal trace point is the starting point of the laser processing path, the laser processing power determined according to step 3 and the parameters determined in steps 4, 5, and 6. programming;
  • Step 8 Complete the moving irradiation of the sapphire workpiece by the laser beam along the processing path in the manner of steps 1 to 7.
  • Step 9 After the laser irradiation is finished, the container for placing the sapphire workpiece is removed from the irradiation station to obtain a sapphire cutting piece separated along the processing path.
  • the chemical etching solution is a hydrofluoric acid solution having a mass fraction of 20% to 40%.
  • the compensated picosecond pulse width laser processing power is 5W to 15W.
  • step 5 the stitch lateral overlap ratio is 20% to 50%.
  • the laser frequency is 200 kHz to 1 MHz
  • the number of pulses at a single point of laser irradiation is 2000 to 4000
  • the matching laser beam moving speed is 1 mm/s to 10 mm/ s.
  • the standing time is from 12 hours to 24 hours.
  • the invention provides a laser high-precision processing method for a sub-micron-sized slice of sapphire.
  • the laser process only needs conventional focusing, and does not need to add other optical originals with special focusing characteristics; using picosecond laser
  • the catalysis of the micro-thermal effect on the chemical corrosion avoids the heating of the water in the corrosion process; the invention can realize the sapphire high-precision cutting of the near-zero taper non-heat-affected zone which overcomes the limitation of the Gaussian focusing mode of the beam, and can directly realize the micrometer or even the sub-Asian Micro-scale high surface quality, ultra-fine slit sapphire high-precision cutting without path limitation.
  • 1 is a sub-micron-scale confocal image obtained by a sub-micron-scale sapphire laser high-precision cutting method according to an embodiment of the present invention.
  • the present invention provides a sub-micron-cut sapphire laser high-precision cutting method;
  • the self-focusing nonlinear effect overcomes the Gaussian focus mode limitation of the beam.
  • the picosecond pulse width laser produces ultra-fine phase transition or electron inside the sapphire according to the process design.
  • the state removes the stitches and utilizes the different corrosive effects of chemical etching on the stitch area and the raw material area to obtain high-quality sapphire laser cutting of various thicknesses and paths, which can satisfy the micro-surface or sub-micron high surface slitting quality and effectively suppress the cutting.
  • Taper taper The state removes the stitches and utilizes the different corrosive effects of chemical etching on the stitch area and the raw material area to obtain high-quality sapphire laser cutting of various thicknesses and paths, which can satisfy the micro-surface or sub-micron high surface slitting quality and effectively suppress the cutting. Taper taper.
  • the invention relates to the field of laser non-ablative cutting processing of hard and brittle transparent materials, in particular to a sapphire laser high-precision cutting method with sub-micron fine cutting surface, which is suitable for fine processing of sapphire of any thickness and shape;
  • the picosecond pulse width laser of the over-frequency wavelength causes an ultra-fine phase transition point or an electronic state removal point from the lower surface of the material, and is formed by a laser focus to form a stitch parallel to the incident direction of the laser, and the laser is arranged in a chemically corrosive environment according to the cutting path.
  • Step 1 According to the high transmittance of sapphire to a certain wavelength, the corresponding wavelength laser beam is incident into the interior of the sapphire and focused on the lower surface of the sapphire processing part; wherein the incident angle of the laser beam can be determined according to the cutting angle required by the sapphire .
  • Step 2 The sapphire processing part is placed in a container filled with chemical etching liquid together with the clamp holding the sapphire processing part, the upper surface of the sapphire processing part is flush with the liquid surface of the chemical etching liquid, and the lower surface of the sapphire processing part is not Touching the bottom of the container; placing a sheet on the upper surface of the sapphire workpiece with high transmittance for the incident wavelength and only guiding light to suppress the evaporation of the chemical etching solution during the laser irradiation; wherein the chemical etching solution is a mass fraction 20% to 40% of hydrofluoric acid solution, the sapphire processing part and the chemical etching liquid level are flush to avoid the scattering of the laser beam by the chemical etching solution; if the sapphire processing part is not in the chemical etching liquid, the chemical etching liquid is sapphire The heat dissipation of the workpiece, the energy of the laser beam cannot guarantee the processing of the sapphire; if the upper surface of the sapphire work
  • Step 3 Using a picosecond pulse width laser to irradiate the sapphire workpiece of step 2, before the light is turned on, the laser processing power is set according to the threshold value of the sapphire nonlinear self-focusing effect, and the laser incident sapphire workpiece is lost due to the slight absorption.
  • the energy value is compensated according to the energy value of the loss to the set laser processing power value; according to the strong transient Fourier heat conduction theory relationship, controlling the laser energy focused on the lower surface of the sapphire workpiece exceeds the phase transformation of the sapphire workpiece Or the threshold of electronic state removal and excitation of the self-focusing nonlinear effect, resulting in an ultrafine phase transition point or an electronic state removal point having a linewidth much smaller than the diameter of the focused beam.
  • the compensated picosecond pulse width laser processing power is 5W to 15W.
  • Step 4 Raise the laser focus position, and guide the ultra-fine phase change point or the electronic state removal point to extend from the lower surface of the sapphire workpiece to the upper surface along the laser incident direction to form a line width ultra-fine phase change or an electronic state removal stitch, the stitch As the starting point of the processing path;
  • Step 6 According to the laser frequency and the number of pulses at a single point of laser irradiation, set a matching laser beam moving rate; the constraint condition of the laser beam moving rate needs to ensure that the pulse number at a single point of the laser irradiation is set at After all the irradiation points are injected, the beam is moved to the next point.
  • the picosecond pulse width laser frequency D is 200 kHz to 1 MHz
  • the number of pulses E at a single point of laser irradiation is 2000 to 4000
  • the matched laser beam moving rate F 2BD(1-C)/E
  • the laser movement rate is from 1 mm/s to 10 mm/s.
  • Step 7 The ultra-fine phase change or electronic state removal trace point completed by the CCD monitoring and positioning steps 3 and 4 is the starting point of the laser processing path, and the laser processing power determined according to step 3 and steps 4, 5, and 6 are determined. Parameter programming.
  • Step 8 Complete the moving irradiation of the sapphire workpiece by the laser beam along the processing path in the manner of steps 1 to 7.
  • the picosecond laser is used to irradiate the micro-thermal effect on the chemical corrosion.
  • Step 9 After the laser irradiation is finished, the container for placing the sapphire workpiece is removed and the irradiation station is allowed to stand for 12 hours to 24 hours to obtain a sapphire cutting piece separated along the processing path.
  • Steps 1 through 9 above are related processes, and the process order cannot be changed. The lack of any of these steps or the change of the process order cannot implement the technology.
  • the invention realizes the sapphire high-precision cutting of the near-zero taper non-heat-affected zone which overcomes the limitation of the Gaussian focusing mode of the beam, and can directly realize the ultra-fine slitting sapphire high-precision cutting of the micrometer or submicron-high surface quality without path limitation.
  • the invention preferably adopts picosecond pulse width laser compensation, the laser processing power is 7W, the horizontal overlap ratio of the stitches is 20%, the repetition frequency is 200 kHz, and each pulse train contains 2400 pulses (the number of pulses at a single point of laser irradiation is 2400) ), the matching laser beam processing rate is 1.5mm / s.
  • Figure 1 shows a submicron-scale confocal image obtained by laser processing sapphire with the above parameters, with a tangent roughness of up to 400 nm.
  • the invention provides a laser high-precision processing method for sub-micron-sized sapphire cutting surface.
  • the laser process only needs conventional focusing, and no other optical originals with special focusing characteristics are needed; the catalytic effect of the micro-thermal effect on the chemical corrosion by the picosecond laser irradiation is utilized.
  • the invention can realize sapphire high-precision cutting of near-zero taper non-heat-affected zone which overcomes the limitation of beam Gaussian focusing mode, and can directly realize micro- or even sub-micron high surface quality without path limitation Super fine cut sapphire high precision cut.

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Abstract

一种蓝宝石亚微米级切面的激光高精加工方法，采用对蓝宝石有高透过率波长的皮秒级脉宽激光从材料下表面引起超细相变点或电子态去除点，经激光焦点提升形成平行于激光入射方向的线迹，在化学腐蚀环境下按切割路径配置激光作用线迹点的相交连接，在形成与切割路径相符的相变区域或电子态去除区域的同时，利用皮秒激光辐照微热效应对化学腐蚀的催化作用，获得蓝宝石样件沿加工路径的分离。上述加工方法克服了光束高斯聚焦模式限制以及实现近零锥度无热影响区的蓝宝石高精切割，可直接实现微米乃至亚微米级高表面质量的不受厚度、路径限制的超精细蓝宝石或其他相同材质的切割。

Description

一种蓝宝石亚微米级切面的激光高精加工方法 技术领域
本发明涉及硬脆透明材料的激光非烧蚀切割加工领域，尤其涉及一种蓝宝石亚微米级切面的激光高精加工方法。
背景技术
蓝宝石即氧化铝单晶体，其莫氏硬度仅次于钻石。因其特殊的力学、热学、电学及优良的抗辐射性能、热传导性能和稳定的化学性能，广泛应用于国防工业、航天尖端科技研究及民用领域。传统的机械加工方法对蓝宝石的切割主要使用金刚石线锯，加工速度、加工自由度、加工质量和精度较低，锯丝等接触式切割工具寿命有限，损耗量高。相比之下激光切割技术具有高能量密度和无接触等特性，可有效避免机械刀具接触式应力对切割需求的限制。但针对蓝宝石类硬脆材料，目前以热烧蚀为主流特征的激光切割技术还无法有效解决裂纹、熔渣、崩裂等损伤问题，严重影响切割深度、切缝宽度、切面表面粗糙度及切割自由路径选择和切割效率等。随着蓝宝石的应用发展趋势朝着更薄、表面质量更高、抗损伤能力更强的方向发展，对蓝宝石的精细切割技术提出了迫切而又难度极高的挑战。激光切割深度、切缝锥度及切缝表面质量上均有突破。
中国发明专利申请201510239300.X公开了一种获取蓝宝石激光切割中裂纹方向和偏移量，然后根据裂纹方向和偏移量调整激光加工位置并完成剩余切割道的加工，该专利切割原理仍基于激光热烧蚀切割，切针对正面和带有背面电极的蓝宝石芯片加工，不涉及切割面加工精度。中国发明专利申请CN201410204028.7所公开的蓝宝石加工方法，是一种集合纳秒激光热处理、超声化学腐蚀预处理、皮秒激光精密加工和超声磨粒抛光后处理四种序列工艺的复合技术，其四个工序是顺序进行的，不是同时进行的；四个工序的操作时间长，工艺繁琐。中国发明专利申请201210290741.9公开了使用脉冲宽度为皮秒(10-12s)、飞秒(10-15s)级的激光通过聚焦在透明材料表面，然后入射形成波导结构，控制激光沿垂直于材料表面方向匀速移动而形成波导平面。波导区与材料的折射率改变区相关，没有产生对材料的击穿性破坏， 但不同透明材料因所属材料体系、晶系及结构的不同，利用波导区形成材料断裂面的实用性不可一概而论；该专利所举实施例为玻璃，玻璃为非晶材料，而本专利所述蓝宝石为硬度远高于玻璃的单晶材料。中国发明专利申请201410657880.X公开了使用30-55W皮秒激光对蓝宝石面板以振镜扫描方式进行去除加工，属蓝宝石表面激光打标工艺，不涉及切割深度和精度等。中国发明专利申请201410379877.6，201410380104.X和201410380147.8公开了激光对透明材料执行成丝的方法、装置和设备，通过分布式聚焦透镜组件产生多个不同焦点，但主焦点不驻留被加工材料上，成丝产生具有特定深度和宽度的孔。德国Maren
Figure PCTCN2017078039-appb-000001
-Jungemann等人利用紧聚焦飞秒激光非线性效应辐照在蓝宝石表面或内部形成微通道，然后经化学超声形成中空微结构(J.Laser Micro Nanoengineering,2010,5(2):145-149.)，该方法中激光加工深度会因激光焦深影响而受限制，且由于飞秒激光的紧聚焦方式必须后续的超声化学加工。本方法通过补偿功率以及提升焦点的方法克服了加工深度的限制，同时利用皮秒激光辐照微热效应对化学腐蚀的催化作用，静置辐照件即获得蓝宝石样件沿加工路径的分离。
发明内容
针对上述问题中存在的不足之处，本发明提供一种蓝宝石亚微米级切面的激光高精加工方法。
为实现上述目的，本发明提供一种蓝宝石亚微米级切面的激光高精加工方法，包括：
步骤1、根据蓝宝石对一定波长的高透过率，将相应波长激光束入射至蓝宝石内部，并聚焦于蓝宝石加工件的下表面；
步骤2、将蓝宝石加工件及夹持蓝宝石加工件的夹具一起置于装有化学腐蚀液的容器中，蓝宝石加工件的上表面与化学腐蚀液的液面齐平，贴近蓝宝石加工件上表面放置针对入射波长具有高透过率仅起导光作用的薄片，蓝宝石加工件的下表面不触碰容器底部；
步骤3、采用皮秒级脉宽激光辐照步骤2所述的蓝宝石加工件，开光前，根据自聚焦效应的阈值设定激光加工功率，计算并确定激光入射蓝宝石加工件因微量吸收而损耗的能量值，补偿于所设定的激光加工功率值；依据强瞬 态傅里叶热传导理论关系，控制聚焦于蓝宝石加工件下表面的激光能量超过使蓝宝石加工件发生相变或电子态去除的阈值并激发自聚焦非线性效应，产生线宽远小于聚焦光束直径的超细相变点或电子态去除点；
步骤4、提升激光焦点位置，引导超细相变点或电子态去除点沿激光入射方向从蓝宝石加工件下表面延长至上表面，形成线宽超细相变或电子态去除线迹；
步骤5、测量步骤4形成线迹的线宽，根据加工路径长度、线迹线宽及线迹横向重叠率，计算完成加工路径所需激光辐照作用的点数；
步骤6、根据激光频率以及激光辐照单点处脉冲数，设置匹配的激光束移动速率；激光束移动速率的约束条件需保证设定的激光辐照单点处脉冲数在全部注入该辐照点后，光束再移至下一点；
步骤7、软件定位步骤3和步骤4所完成的超细相变或电子态去除线迹点为激光加工路径的起始点，根据步骤3确定的激光加工功率和步骤4、5、6确定的参数编制程序；
步骤8、以步骤1到步骤7的方式沿加工路径完成激光束对蓝宝石工件的移动辐照；
步骤9、激光辐照结束后，将放置蓝宝石加工件的容器移除辐照工位静置，获得沿加工路径分离的蓝宝石切割件。
作为本发明的进一步改进，在步骤2中，所述化学腐蚀液为质量分数20％～40％的氢氟酸溶液。
作为本发明的进一步改进，在步骤3中，补偿后的皮秒级脉宽激光加工功率为5W～15W。
作为本发明的进一步改进，在步骤5中，所述线迹横向重叠率为20％～50％。
作为本发明的进一步改进，在步骤6中，所述激光频率为200kHz～1MHz，激光辐照单点处的脉冲数为2000个～4000个，匹配的激光束移动速率为1mm/s～10mm/s。
作为本发明的进一步改进，在步骤9中，静置时间为12小时～24小时。
与现有技术相比，本发明的有益效果为：
本发明提供一种蓝宝石亚微米级切面的激光高精加工方法，激光工艺只需常规的聚焦，无需外加其他具有特殊聚焦特性的光学原件；利用皮秒激光 辐照微热效应对化学腐蚀的催化作用，避免在腐蚀过程中的水域加热；本发明可以实现克服光束高斯聚焦模式限制的近零锥度无热影响区的蓝宝石高精切割，可直接实现微米乃至亚微米级高表面质量的不受路径限制的超细切缝蓝宝石高精切割。
附图说明
图1为本发明一种实施例公开的亚微米级切面的蓝宝石激光高精切割方法得到的亚微米级切面共聚焦图像。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
为了解决现有技术问题，实现具有高硬脆、耐腐蚀特性蓝宝石单晶和相似硬脆材料的精细切割，本发明提供了一种亚微米级切面的蓝宝石激光高精切割方法；其采用皮秒级脉宽激光作为自聚焦非线性效应光源，自聚焦非线性效应克服光束高斯聚焦模式限制，按照切割路径要求，通过工艺设计，使皮秒级脉宽激光在蓝宝石内部产生超细相变或者电子态去除线迹，利用化学腐蚀对线迹区域和原材料区域不同的腐蚀效应，获得微米乃至亚微米级高表面切缝质量的、可满足各种厚度、路径的高精蓝宝石激光切割并有效抑制切缝锥度。
下面结合附图对本发明做进一步的详细描述：
本发明涉及硬脆透明材料的激光非烧蚀切割加工领域，特别涉及一种亚微米级精细切面的蓝宝石激光高精切割方法，适合于任何厚度以及形状的蓝宝石精细加工；采用对蓝宝石有高透过率波长的皮秒级脉宽激光从材料下表面引起超细相变点或电子态去除点，经激光焦点提升形成平行于激光入射方向的线迹，在化学腐蚀环境下按切割路径配置激光作用线迹点的相交连接，在形成与切割路径相符的相变区域或电子态去除区域的同时，利用皮秒激光 辐照微热效应对化学腐蚀的催化作用，获得蓝宝石样件沿加工路径的分离；其具体包括：
步骤1、根据蓝宝石对一定波长的高透过率，将相应波长激光束入射至蓝宝石内部，并聚焦于蓝宝石加工件的下表面；其中，可根据蓝宝石所需的切割角度确定激光束的入射角度。
步骤2、将蓝宝石加工件连同夹持蓝宝石加工件的夹具一起置于装有化学腐蚀液的容器中，蓝宝石加工件的上表面与化学腐蚀液的液面齐平，蓝宝石加工件的下表面不触碰容器底部；贴近蓝宝石加工件上表面放置针对入射波长具有高透过率仅起导光作用的薄片，以抑制激光辐照过程中化学腐蚀液的蒸发消耗；其中，化学腐蚀液为质量分数20％～40％的氢氟酸溶液，蓝宝石加工件与化学腐蚀液的液面齐平可避免化学腐蚀液对激光束的散射；若蓝宝石加工件没入化学腐蚀液中，由于化学腐蚀液对蓝宝石加工件的散热，激光束的能量不能保证蓝宝石的加工；若蓝宝石加工件的上表面高于化学腐蚀液液面，则化学腐蚀液液面至蓝宝石加工件上表面之间的工件不能完成化学液的腐蚀。
步骤3、采用皮秒级脉宽激光辐照步骤2的蓝宝石加工件，开光前，根据蓝宝石非线性自聚焦效应的阈值设定激光加工功率，计算并确定激光入射蓝宝石加工件因微量吸收而损耗的能量值，根据损耗的能量值补偿于所设定的激光加工功率值；依据强瞬态傅里叶热传导理论关系，控制聚焦于蓝宝石加工件下表面的激光能量超过使蓝宝石加工件发生相变或电子态去除的阈值并激发自聚焦非线性效应，产生线宽远小于聚焦光束直径的超细相变点或电子态去除点。其中，补偿后的皮秒级脉宽激光加工功率为5W～15W。
步骤4、提升激光焦点位置，引导超细相变点或电子态去除点沿激光入射方向从蓝宝石加工件下表面延长至上表面，形成线宽超细相变或电子态去除线迹，该线迹作为加工路径的起始点；
步骤5、测量步骤4形成线迹的线宽B，根据加工路径长度A、线迹线宽B及线迹横向重叠率C，计算完成加工路径所需激光辐照作用的点数N，N＝AB/(1-C/2)；其中，线迹横向重叠率为20％～50％。
步骤6、根据激光频率以及激光辐照单点处脉冲数，设置匹配的激光束移动速率；激光束移动速率的约束条件需保证设定的激光辐照单点处脉冲数在 全部注入该辐照点后，光束再移至下一点。其中，皮秒级脉宽激光频率D为200kHz～1MHz，激光辐照单点处的脉冲数E为2000个～4000个，匹配的激光束移动速率F＝2BD(1-C)/E,得到激光移动速率为1mm/s～10mm/s。
步骤7、采用CCD监测定位步骤3和步骤4所完成的超细相变或电子态去除线迹点为激光加工路径的起始点，根据步骤3确定的激光加工功率和步骤4、5、6确定的参数编制程序。
步骤8、以步骤1到步骤7的方式沿加工路径完成激光束对蓝宝石工件的移动辐照；此外，利用皮秒激光辐照微热效应对化学腐蚀的催化作用。
步骤9、激光辐照结束后，将放置蓝宝石加工件的容器移除辐照工位静置12小时～24小时，获得沿加工路径分离的蓝宝石切割件。
上述步骤1到步骤9为关联工艺，流程次序不可更改，缺少其中任何一步或更改流程次序都无法实现该技术。
本发明实现克服光束高斯聚焦模式限制的近零锥度无热影响区的蓝宝石高精切割，可直接实现微米乃至亚微米级高表面质量的不受路径限制的超细切缝蓝宝石高精切割。
本发明优选采用皮秒级脉宽激光补偿后激光加工功率7W，线迹横向重叠率为20％，重复频率200kHz，每个脉冲串包含2400个脉冲(激光辐照单点处的脉冲数为2400个)，匹配激光束加工速率为1.5mm/s。图1为采用上述参数的激光加工蓝宝石得到的亚微米级切面共聚焦图像，切面粗糙度可达400nm。
本发明提供一种蓝宝石亚微米级切面的激光高精加工方法，激光工艺只需常规的聚焦，无需外加其他具有特殊聚焦特性的光学原件；利用皮秒激光辐照微热效应对化学腐蚀的催化作用，避免在腐蚀过程中的水域加热；本发明可以实现克服光束高斯聚焦模式限制的近零锥度无热影响区的蓝宝石高精切割，可直接实现微米乃至亚微米级高表面质量的不受路径限制的超细切缝蓝宝石高精切割。
以上仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (6)

  1. 一种蓝宝石亚微米级切面的激光高精加工方法，其特征在于，包括：
    步骤1、根据蓝宝石对一定波长的高透过率，将相应波长激光束入射至蓝宝石内部，并聚焦于蓝宝石加工件的下表面；
    步骤2、将蓝宝石加工件及夹持蓝宝石加工件的夹具一起置于装有化学腐蚀液的容器中，蓝宝石加工件的上表面与化学腐蚀液的液面齐平，贴近蓝宝石加工件上表面放置针对入射波长具有高透过率仅起导光作用的薄片，蓝宝石加工件的下表面不触碰容器底部；
    步骤3、采用皮秒级脉宽激光辐照步骤2所述的蓝宝石加工件，开光前，根据自聚焦效应的阈值设定激光加工功率，计算并确定激光入射蓝宝石加工件因微量吸收而损耗的能量值，补偿于所设定的激光加工功率值；依据强瞬态傅里叶热传导理论关系，控制聚焦于蓝宝石加工件下表面的激光能量超过使蓝宝石加工件发生相变或电子态去除的阈值并激发自聚焦非线性效应，产生线宽远小于聚焦光束直径的超细相变点或电子态去除点；
    步骤4、提升激光焦点位置，引导超细相变点或电子态去除点沿激光入射方向从蓝宝石加工件下表面延长至上表面，形成线宽超细相变或电子态去除线迹；
    步骤5、测量步骤4形成线迹的线宽，根据加工路径长度、线迹线宽及线迹横向重叠率，计算完成加工路径所需激光辐照作用的点数；
    步骤6、根据激光频率以及激光辐照单点处脉冲数，设置匹配的激光束移动速率；激光束移动速率的约束条件需保证设定的激光辐照单点处脉冲数在全部注入该辐照点后，光束再移至下一点；
    步骤7、软件定位步骤3和步骤4所完成的超细相变或电子态去除线迹点为激光加工路径的起始点，根据步骤3确定的激光加工功率和步骤4、5、6确定的参数编制程序；
    步骤8、以步骤1到步骤7的方式沿加工路径完成激光束对蓝宝石工件的移动辐照；
    步骤9、激光辐照结束后，将放置蓝宝石加工件的容器移除辐照工位静置，获得沿加工路径分离的蓝宝石切割件。
  2. 如权利要求1所述的蓝宝石亚微米级切面的激光高精加工方法，其特征在于，在步骤2中，所述化学腐蚀液为质量分数20％～40％的氢氟酸溶液。
  3. 如权利要求1所述的蓝宝石亚微米级切面的激光高精加工方法，其特征在于，在步骤3中，补偿后的皮秒级脉宽激光加工功率为5W～15W。
  4. 如权利要求1所述的蓝宝石亚微米级切面的激光高精加工方法，其特征在于，在步骤5中，所述线迹横向重叠率为20％～50％。
  5. 如权利要求1所述的蓝宝石亚微米级切面的激光高精加工方法，其特征在于，在步骤6中，所述激光频率为200kHz～1MHz，激光辐照单点处的脉冲数为2000个～4000个，匹配的激光束移动速率为1mm/s～10mm/s。
  6. 如权利要求1所述的蓝宝石亚微米级切面的激光高精加工方法，其特征在于，在步骤9中，静置时间为12小时～24小时。
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107452607A (zh) * 2017-08-02 2017-12-08 武汉大学 一种晶圆激光研磨系统及方法
CN110421265B (zh) * 2019-07-01 2021-06-01 中国科学院上海光学精密机械研究所 一种利用飞秒激光加工不同形状亚波长周期结构的方法和装置
CN112979170B (zh) * 2019-12-16 2022-12-02 航天科工惯性技术有限公司 一种激光辅助的化学腐蚀加工方法
CN112461263B (zh) * 2020-11-20 2023-03-24 大连理工大学 一种金刚石陀螺谐振子纳米制造方法
CN113977113B (zh) * 2021-11-30 2024-10-18 重庆川仪自动化股份有限公司 宝石测量头的盲孔加工工艺方法
CN121402834A (zh) * 2025-09-22 2026-01-27 北京星箭传感器科技有限公司 基于激光功率动态调节的蓝宝石摆片加工控制系统

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353687A (ja) * 1999-10-21 2000-12-19 Masaaki Suzuki 透明脆性材料の加工法
WO2003049155A1 (en) * 2001-11-30 2003-06-12 Positive Light, Inc. System and method for laser micro- machining
CN103418912A (zh) * 2013-05-16 2013-12-04 广东工业大学 增强蓝宝石激光背向湿式刻蚀率的加工装置及加工方法
CN103952767A (zh) * 2014-05-14 2014-07-30 浙江嘉泰激光科技有限公司 一种双激光束序列扫描精密加工蓝宝石的方法
CN104959736A (zh) * 2015-07-23 2015-10-07 深圳英诺激光科技有限公司 一种激光成丝加工微孔的装置及方法
CN105458515A (zh) * 2014-09-11 2016-04-06 大族激光科技产业集团股份有限公司 一种蓝宝石激光挖槽装置及其挖槽方法
CN106392341A (zh) * 2016-11-07 2017-02-15 武汉华工激光工程有限责任公司 一种脆性材料打孔方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006007619A (ja) * 2004-06-25 2006-01-12 Aisin Seiki Co Ltd レーザ加工方法及びレーザ加工装置
JP2009032970A (ja) * 2007-07-27 2009-02-12 Rohm Co Ltd 窒化物半導体素子の製造方法
KR100984719B1 (ko) * 2010-04-16 2010-10-01 유병소 레이저 가공장치
EP2623991A1 (en) * 2010-09-30 2013-08-07 Fujikura Co., Ltd. Base body and method for manufacturing base body
EP3169479B1 (en) * 2014-07-14 2019-10-02 Corning Incorporated Method of and system for arresting incident crack propagation in a transparent material
KR20170028943A (ko) * 2014-07-14 2017-03-14 코닝 인코포레이티드 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템
CN107073641B (zh) * 2014-07-14 2020-11-10 康宁股份有限公司 接口块；用于使用这种接口块切割在波长范围内透明的衬底的系统和方法
CN204673158U (zh) * 2015-05-28 2015-09-30 广东工业大学 一种激光背面湿式加工蓝宝石基片的夹具装置
WO2017081635A1 (en) * 2015-11-10 2017-05-18 Ecole Polytechnique Federale De Lausanne (Epfl) Small-scale metal castings, small-scale metal/transparent composite structures and process to produce same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353687A (ja) * 1999-10-21 2000-12-19 Masaaki Suzuki 透明脆性材料の加工法
WO2003049155A1 (en) * 2001-11-30 2003-06-12 Positive Light, Inc. System and method for laser micro- machining
CN103418912A (zh) * 2013-05-16 2013-12-04 广东工业大学 增强蓝宝石激光背向湿式刻蚀率的加工装置及加工方法
CN103952767A (zh) * 2014-05-14 2014-07-30 浙江嘉泰激光科技有限公司 一种双激光束序列扫描精密加工蓝宝石的方法
CN105458515A (zh) * 2014-09-11 2016-04-06 大族激光科技产业集团股份有限公司 一种蓝宝石激光挖槽装置及其挖槽方法
CN104959736A (zh) * 2015-07-23 2015-10-07 深圳英诺激光科技有限公司 一种激光成丝加工微孔的装置及方法
CN106392341A (zh) * 2016-11-07 2017-02-15 武汉华工激光工程有限责任公司 一种脆性材料打孔方法

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