WO2018148277A1 - Led with integral sensor - Google Patents

Led with integral sensor Download PDF

Info

Publication number
WO2018148277A1
WO2018148277A1 PCT/US2018/017221 US2018017221W WO2018148277A1 WO 2018148277 A1 WO2018148277 A1 WO 2018148277A1 US 2018017221 W US2018017221 W US 2018017221W WO 2018148277 A1 WO2018148277 A1 WO 2018148277A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
light
detector chip
lead frame
cover
Prior art date
Application number
PCT/US2018/017221
Other languages
French (fr)
Inventor
Densen Cao
Original Assignee
Cao Group, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cao Group, Inc. filed Critical Cao Group, Inc.
Publication of WO2018148277A1 publication Critical patent/WO2018148277A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention discloses light emitting diodes (LEDs) having at least one integral sensor.
  • the invention discloses light emitting diodes (LEDs) having at least one integral sensor.
  • Figure 1 depicts an isometric view of an LED device having a plurality of LED chips and an integral sensor according an embodiment of the present invention.
  • Figure 2(a) depicts an isometric view of an LED device having a plurality of LED chips and an integral sensor positioned within a well according to another embodiment of the present invention.
  • Figure 2(b) depicts a cross-sectional view of the LED device depicted in Figure 2(a).
  • LEDs Light Emitting Diodes
  • Many types of LEDs have been created for different applications.
  • the emitting light intensity needs to be monitored and modulated.
  • light emission from LEDs are mainly monitored use external detection means and then use electronic feedback to control LEDs.
  • This invention discloses an LED device with a detecting sensor inside to provide feedback signal for controlling LED emission.
  • FIG 1 shows an isometric view of an embodiment of the invention.
  • An LED device 100 includes a lead frame 101, which can be from materials like ceramics, metal, metal PCB, alloy, composite, and any materials that are useful as lead frame for LEDs.
  • the lead frame 101 has a relative flat surface.
  • the LED device 100 may also include a cover 102, which is illustrated as a flat cover.
  • the cover 102 can be any type of lens to shape the light emitted from LED chips 103a, 103b, 103c, and 103d.
  • the external lens can also be used to shape the beam of emitted lights or collecting lights.
  • the cover 102 may be made of materials transparent to emitted light and reflected light.
  • the material for cover 102 can be plastic, silicon, glass, composites, and any other materials that are suitable as a cover.
  • the cover 102 can be coated with phosphors for conversion of mono wavelength to a different color including a white color.
  • the LED chips 103a, 103b, 103c, and 103d are bonded to the lead frame 101.
  • Wire bonding pads 104a, 104b, 104c, and 104d may be provided for LED chips 103a, 103b, 103c, and 103d, respectively.
  • the bonding pads 104a, 104b, 104c, and 104d can extend to side and bottom of the lead frame 101 as a connection for electricity.
  • Bonding wires 105a, 105b, 105c, 105d, 105e, and 105f may be provided to connect LED chips 103a, 103b, 103c, and 103d to bonding pads 104a, 104b, 104c, and 104d, respectively.
  • the LED chips 103a, 103b, 103c, and 103d can be any type that emits light.
  • a detector chip 106 which may be a light sensor, may also be coupled to the lead frame 101.
  • the detector chip 106 can be any type of sensor that absorbs light and converts the absorbed light into an electrical signal.
  • a preferred position of the detector chip 106 is in the center of lead frame 101, but can be any position depending the needs from application.
  • Wire bonding pads 107a and 107b may be provided for the detector chip 106.
  • the bonding pads 107a and 107b can extend to side and bottom of lead frame 101 as a connection for electricity.
  • Bonding wires 108a and 108b may be provided for connecting the detector chip 106 to the bonding pads 107a and 107b.
  • the lead frame 101 will provide electrical connections for at least one LED chip and at least one detector chip, depending on the
  • a lens may be utilized as the cover 102 for the LED device 100 or an external lens (not shown) can be used to collect light for the detector chip to generate a better signal.
  • the detector chip 106 will detect at least a portion of the light emitted by the LED chips 103a, 103b, 103c, and 103d through detecting light emitted directly and/or light reflected from an object and generate an electrical signal feeding back to a control circuit.
  • the control circuit will utilize the feedback signal from the detector chip 106 and adjust LED emitting intensity as a user desires through calibration and programming.
  • FIGS 2a and 2b depict an LED device 200 according to an additional embodiment of the present invention.
  • the LED device 200 may include a lead frame 201, which can be from materials like ceramics, metal, metal PCB, alloy, composite, and any materials that are useful as a lead frame for LEDs.
  • a cover 202 is illustrated as a flat cover.
  • the cover 202 can be also any type of lens to shaping the lights emitted from LEDs.
  • An external lens can also be used to shape the beam of emitted light or for collecting light.
  • the cover 202 may be made of materials transparent to emitted light and/or reflected light from an object.
  • the material for cover 202 can be plastic, silicon, glass, composites, and any other materials that are suitable as a cover.
  • the cover 202 can be coated with phosphors for conversion of mono wavelength to a different coler, including a white color.
  • the lead frame 201 includes two wells, 203 and 204, respectively.
  • the wells 203 and 204 house LED chips 205a and 205b and a detector chip 208, respectively.
  • the LED chips 205a and 205b may be wire bonded to the lead frame 201 in the respective wells.
  • Wire bonding pads 206a, 206b, 206c, and 206d are included for LED chips 205a and 205b, respectively.
  • Each bonding pad 203. 206a, 206b, 206c, and 206d can extend to the side and bottom of the lead frame 201 for connection of electricity.
  • Bonding wires 207a, 207b, 207c, and 207d may be provided to connect LED chips 205a and 205b to bonding pads 206a, 206b, 206c, and 206d.
  • the LED chips 205a and 205b can be any type that emits light.
  • a detector chip 208 which may be a light sensor, is positioned within the well 204.
  • the detector chip 208 can be any type of sensors that absorbs light and converts light into an electrical signal.
  • Wire bonding pads 209a and 209b can extend to the side and bottom of the lead frame 201 for connection of electricity. Bonding wires 210a and 210b connect the detector chip 208 to the bonding pads 209a and 209b.
  • a preferred position for the well 204 is in the center of the lead frame 201, but can be any position depending on the needs of application.
  • the lead frame 201 may provide electrical connections for the LED chips 205a and 205b and detector chip 208 in the LED device 200 depending on the configuration of the LED and detector chip connections.
  • the LED device 200 may include any number of chips, but will include at least one LED chip and at least one detector chip.
  • the well 204 will prevent direct light detection from LED chips 205 a and 205b directly and will only detect light reflected from an object.
  • the detector chip 208 will detect at least a portion of the light emitted by the LED chips 205a and 205b through detecting only light reflected from an object and generate an electrical signal feeding back to a control circuit.
  • the control circuit will utilize the feedback signal from the detector chip 208 and adjust LED emitting intensity as a user desires through calibration and programming.

Abstract

An LED device may comprise at least one LED chip, and at least one detector chip. In some embodiments, the at least one detector chip and the at least one LED chip may be positioned within a respective well.

Description

LED WITH INTEGRAL SENSOR
TECHNICAL FIELD OF THE INVENTION
[0001] The present invention discloses light emitting diodes (LEDs) having at least one integral sensor.
CROSS-REFERENCES TO RELATED APPLICATIONS
[0002] This application claims the benefit of U.S. Provisional Application No. 62/456,749 filed on February 9, 2017, which is hereby incorporated by reference in its entirety.
SUMMARY
[0003] The invention discloses light emitting diodes (LEDs) having at least one integral sensor.
BRIEF DESCRIPTION OF THE DRAWINGS
[0004] In order to describe the manner in which the above-recited and other advantages and features of the invention can be obtained, a more particular description of the invention briefly described above will be rendered by reference to specific example embodiments thereof which are illustrated in the appended drawings. Understanding that these drawings depict only typical embodiments of the invention and are not therefore to be considered to be limiting of its scope, the invention will be described and explained with additional specificity and detail through the use of the accompanying drawings.
[0005] Figure 1 depicts an isometric view of an LED device having a plurality of LED chips and an integral sensor according an embodiment of the present invention. [0006] Figure 2(a) depicts an isometric view of an LED device having a plurality of LED chips and an integral sensor positioned within a well according to another embodiment of the present invention.
[0007] Figure 2(b) depicts a cross-sectional view of the LED device depicted in Figure 2(a).
DETAILED DESCRIPTION OF THE INVENTION
[0008] Light Emitting Diodes (LEDs) are widely used in many applications in different industries. Many types of LEDs have been created for different applications. In some applications, the emitting light intensity needs to be monitored and modulated. Currently, light emission from LEDs are mainly monitored use external detection means and then use electronic feedback to control LEDs.
[0009] This invention discloses an LED device with a detecting sensor inside to provide feedback signal for controlling LED emission.
[0010] Fig 1 shows an isometric view of an embodiment of the invention. An LED device 100 includes a lead frame 101, which can be from materials like ceramics, metal, metal PCB, alloy, composite, and any materials that are useful as lead frame for LEDs. In this embodiment, the lead frame 101 has a relative flat surface. The LED device 100 may also include a cover 102, which is illustrated as a flat cover. The cover 102 can be any type of lens to shape the light emitted from LED chips 103a, 103b, 103c, and 103d. The external lens can also be used to shape the beam of emitted lights or collecting lights. The cover 102 may be made of materials transparent to emitted light and reflected light. The material for cover 102 can be plastic, silicon, glass, composites, and any other materials that are suitable as a cover. The cover 102 can be coated with phosphors for conversion of mono wavelength to a different color including a white color. The LED chips 103a, 103b, 103c, and 103d are bonded to the lead frame 101. Wire bonding pads 104a, 104b, 104c, and 104d may be provided for LED chips 103a, 103b, 103c, and 103d, respectively. The bonding pads 104a, 104b, 104c, and 104d can extend to side and bottom of the lead frame 101 as a connection for electricity. Bonding wires 105a, 105b, 105c, 105d, 105e, and 105f may be provided to connect LED chips 103a, 103b, 103c, and 103d to bonding pads 104a, 104b, 104c, and 104d, respectively. The LED chips 103a, 103b, 103c, and 103d can be any type that emits light. A detector chip 106, which may be a light sensor, may also be coupled to the lead frame 101. The detector chip 106 can be any type of sensor that absorbs light and converts the absorbed light into an electrical signal. A preferred position of the detector chip 106 is in the center of lead frame 101, but can be any position depending the needs from application. Wire bonding pads 107a and 107b may be provided for the detector chip 106. The bonding pads 107a and 107b can extend to side and bottom of lead frame 101 as a connection for electricity. Bonding wires 108a and 108b may be provided for connecting the detector chip 106 to the bonding pads 107a and 107b. The lead frame 101 will provide electrical connections for at least one LED chip and at least one detector chip, depending on the
configuration of LED and detector chip connections. A lens may be utilized as the cover 102 for the LED device 100 or an external lens (not shown) can be used to collect light for the detector chip to generate a better signal.
[0011] In operation, the detector chip 106 will detect at least a portion of the light emitted by the LED chips 103a, 103b, 103c, and 103d through detecting light emitted directly and/or light reflected from an object and generate an electrical signal feeding back to a control circuit. The control circuit will utilize the feedback signal from the detector chip 106 and adjust LED emitting intensity as a user desires through calibration and programming.
[0012] Figures 2a and 2b depict an LED device 200 according to an additional embodiment of the present invention. The LED device 200 may include a lead frame 201, which can be from materials like ceramics, metal, metal PCB, alloy, composite, and any materials that are useful as a lead frame for LEDs. A cover 202 is illustrated as a flat cover. The cover 202 can be also any type of lens to shaping the lights emitted from LEDs. An external lens can also be used to shape the beam of emitted light or for collecting light. The cover 202 may be made of materials transparent to emitted light and/or reflected light from an object. The material for cover 202 can be plastic, silicon, glass, composites, and any other materials that are suitable as a cover. The cover 202 can be coated with phosphors for conversion of mono wavelength to a different coler, including a white color. In this embodiment, the lead frame 201 includes two wells, 203 and 204, respectively. The wells 203 and 204 house LED chips 205a and 205b and a detector chip 208, respectively. The LED chips 205a and 205b may be wire bonded to the lead frame 201 in the respective wells. Wire bonding pads 206a, 206b, 206c, and 206d are included for LED chips 205a and 205b, respectively. Each bonding pad 203. 206a, 206b, 206c, and 206d can extend to the side and bottom of the lead frame 201 for connection of electricity. Bonding wires 207a, 207b, 207c, and 207d may be provided to connect LED chips 205a and 205b to bonding pads 206a, 206b, 206c, and 206d. The LED chips 205a and 205b can be any type that emits light. A detector chip 208, which may be a light sensor, is positioned within the well 204. The detector chip 208 can be any type of sensors that absorbs light and converts light into an electrical signal. Wire bonding pads 209a and 209b can extend to the side and bottom of the lead frame 201 for connection of electricity. Bonding wires 210a and 210b connect the detector chip 208 to the bonding pads 209a and 209b. A preferred position for the well 204 is in the center of the lead frame 201, but can be any position depending on the needs of application. The lead frame 201 may provide electrical connections for the LED chips 205a and 205b and detector chip 208 in the LED device 200 depending on the configuration of the LED and detector chip connections. The LED device 200 may include any number of chips, but will include at least one LED chip and at least one detector chip. The well 204 will prevent direct light detection from LED chips 205 a and 205b directly and will only detect light reflected from an object.
[0013] In operation, the detector chip 208 will detect at least a portion of the light emitted by the LED chips 205a and 205b through detecting only light reflected from an object and generate an electrical signal feeding back to a control circuit. The control circuit will utilize the feedback signal from the detector chip 208 and adjust LED emitting intensity as a user desires through calibration and programming.

Claims

CLAIMS What is claimed is:
1. An LED device comprising:
at least one LED chip; and
at least one detector chip.
2. The LED device of claim 1, wherein the at least one detector chip is positioned within a well.
3. The LED device of claim 2, wherein the at least one LED chip is positioned within a well.
PCT/US2018/017221 2017-02-09 2018-02-07 Led with integral sensor WO2018148277A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762456749P 2017-02-09 2017-02-09
US62/456,749 2017-02-09

Publications (1)

Publication Number Publication Date
WO2018148277A1 true WO2018148277A1 (en) 2018-08-16

Family

ID=63107056

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2018/017221 WO2018148277A1 (en) 2017-02-09 2018-02-07 Led with integral sensor

Country Status (1)

Country Link
WO (1) WO2018148277A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
US6600231B2 (en) * 2000-05-11 2003-07-29 Mitutoyo Corporation Functional device unit and method of producing the same
US20110024627A1 (en) * 2009-07-31 2011-02-03 Avago Technologies Ecbu (Singapore) Pte. Ltd. Proximity Sensor with Ceramic Housing and Light Barrier
US20130341650A1 (en) * 2012-06-22 2013-12-26 Yin-Ming PENG Photosensor chip package structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5291038A (en) * 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
US6600231B2 (en) * 2000-05-11 2003-07-29 Mitutoyo Corporation Functional device unit and method of producing the same
US20110024627A1 (en) * 2009-07-31 2011-02-03 Avago Technologies Ecbu (Singapore) Pte. Ltd. Proximity Sensor with Ceramic Housing and Light Barrier
US20130341650A1 (en) * 2012-06-22 2013-12-26 Yin-Ming PENG Photosensor chip package structure

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