WO2018145403A1 - 一种手写输入装置 - Google Patents

一种手写输入装置 Download PDF

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Publication number
WO2018145403A1
WO2018145403A1 PCT/CN2017/093076 CN2017093076W WO2018145403A1 WO 2018145403 A1 WO2018145403 A1 WO 2018145403A1 CN 2017093076 W CN2017093076 W CN 2017093076W WO 2018145403 A1 WO2018145403 A1 WO 2018145403A1
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Prior art keywords
magnetic
magnetic signal
array
alloy
induction coil
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PCT/CN2017/093076
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English (en)
French (fr)
Inventor
朱德忠
奚邦籽
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广东宗华触控科技有限公司
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Application filed by 广东宗华触控科技有限公司 filed Critical 广东宗华触控科技有限公司
Priority to JP2018525596A priority Critical patent/JP2020510810A/ja
Priority to EP17872873.9A priority patent/EP3385826A4/en
Priority to KR1020187015594A priority patent/KR20190116047A/ko
Priority to US16/062,380 priority patent/US10678349B2/en
Publication of WO2018145403A1 publication Critical patent/WO2018145403A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/033—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor
    • G06F3/0354—Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
    • G06F3/03545—Pens or stylus
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04162—Control or interface arrangements specially adapted for digitisers for exchanging data with external devices, e.g. smart pens, via the digitiser sensing hardware
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/046—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by electromagnetic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Definitions

  • the present invention relates to the field of magnetic induction, and in particular to a handwriting input device.
  • the existing handwriting input device generally uses a plurality of geographical electromagnetic induction coils in two directions and two directions to scan and detect the electromagnetic pen.
  • Patent No. CN201320756682.X Single Layer Wiring System for Electromagnetic Antennas discloses a magnetic signal positioning sensor that is provided with two independent electromagnetic induction channel coils in two directions on the two-dimensional surface, which can be used for scanning and detecting the positioning electromagnetic pen. A handwriting input touch device is realized.
  • the magnetic signal positioning sensor is provided with a separate electromagnetic induction channel coil for each channel position.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, the main object of the present invention is to provide a handwriting input device, which aims to solve the problems of long detection time, slow reaction speed, low accuracy of positioning sensing, large cumulative error of long distance movement, and complicated device of the magnetic induction device of the prior art.
  • the present invention provides a handwriting input device comprising a display component, a magnetic signal sensing component disposed at any position within 100 mm of the display component in front of or behind the display component, corresponding to the magnetic signal sensing component a magnetic signal output member, all of the above components are disposed in the outer casing, and a main board is further disposed in the outer casing;
  • the magnetic signal sensing component comprises an inductive component and a test for connecting the inductive component And measuring the control circuit
  • the sensing element comprises: a horizontal coding array, a vertical coding array disposed perpendicular to the horizontal coding array, the horizontal coding array and the vertical coding array are each composed of a magnetic signal induction coil unit.
  • the horizontal coding array is composed of more than one magnetic signal induction coil unit; the vertical coding array is composed of more than one magnetic signal induction coil unit; the magnetic signal induction coil unit is connected by at least two magnetic induction coils through a differential line.
  • the magnetic induction coil is composed of a continuous loop wire of 1 to 10 turns.
  • the differential line of the series magnetic induction coil in the magnetic signal induction coil unit is in the magnetic induction positioning effective area.
  • the differential line of the series magnetic induction coil in the magnetic signal induction coil unit is outside the magnetic induction positioning effective area.
  • the detection control circuit comprises a plurality of select array switches, a pre-stage signal amplifier, a controllable gain amplifier, a band-pass amplifier, an AC-DC converter, an integration circuit, a DC amplifier, a charge and discharge switch, and a processor;
  • one side of the multi-select array switch is respectively connected to the horizontal magnetic induction coil and the vertical magnetic induction coil, and the other side of the multi-select array switch is connected to the preamplifier, the preamplifier and The controllable gain amplifier is connected;
  • controllable gain amplifier leads to the processor, and the other end of the controllable gain amplifier leads to the band pass amplifier, and the band pass amplifier is connected to the integration circuit through the AC/DC converter;
  • One end of the integration circuit leads to the processor through a DC amplifier, and the other end of the integration circuit leads to the charge and discharge switch, and the processor leads to the multiple select array switch and the charge and discharge switch, respectively.
  • An intermediate member is further disposed between the display component and the magnetic signal sensing component.
  • the magnetic signal output member is an electromagnetic stylus, and the first end of the electromagnetic stylus is an alternating electromagnetic signal source.
  • the magnetic signal induction coils disposed in the horizontal coding array and the magnetic signal induction coils in the vertical coding array are arranged in a cross arrangement.
  • the arrangement of the array is set as: any magnetic signal induction coil in the horizontal coding array and the vertical coding array
  • the two-two arrangement of the magnetic induction coil on the element and the magnetic induction coil on the other magnetic signal induction coil unit adjacent to or adjacent to each other are not repeated with the two-two arrangement at other positions;
  • the magnetic induction coils on the same magnetic signal induction coil unit are not continuously arranged at any position to participate in the two-two arrangement.
  • the two-two arrangement of the two magnetic induction coils adjacent to each other in the horizontal coding array and the vertical coding array is unique.
  • the magnetic signal coil unit of the magnetic signal positioning sensor is formed by connecting a plurality of magnetic induction channel coils in series, and each series magnetic signal induction coil unit can simultaneously detect alternating magnetic signal sources at a plurality of positions, so that the electromagnetic induction channel coil is led out.
  • the wiring of the line is simpler.
  • the magnetic signal positioning sensor has a short scan detection time for the alternating signal source, and the speed is fast, the positioning induction precision is high, the long-distance movement cumulative error is small, and the device and the cable are simple and clear.
  • Figure 1 is a schematic view of the overall structure of the present invention
  • FIG. 2 is a schematic structural view of a magnetic signal sensing component of the present invention
  • FIG. 3 is a schematic structural view of a magnetic induction unit in which a differential line is disposed in an effective area according to the present invention.
  • FIG. 4 is a schematic structural view of a magnetic induction unit in which a differential line is disposed outside an effective area according to the present invention.
  • FIG. 5 is a schematic diagram of a horizontal array coding structure in which a differential line is disposed in an effective area according to the present invention.
  • FIG. 6 is a schematic diagram of a vertical array coding structure in which a differential line is disposed in an effective area according to the present invention.
  • Figure 7 is a schematic view of the sensing element of the differential line disposed in the active area of the present invention.
  • FIG. 8 is a schematic diagram of a horizontal array coding structure in which a differential line is disposed outside an effective area according to the present invention.
  • FIG. 9 is a schematic diagram of a vertical array coding structure in which a differential line is disposed outside an active area according to the present invention.
  • Figure 10 is a schematic view of the sensing element with the differential line disposed outside the active area of the present invention.
  • Figure 11 is a schematic view showing the structure of another embodiment of the present invention.
  • first, second and the like are used for descriptive purposes only, and are not to be construed as indicating or implying their relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include at least one of the features, either explicitly or implicitly.
  • the terms "connected”, “fixed” and the like should be understood broadly, unless otherwise clearly defined and limited.
  • “fixed” may be a fixed connection, or may be a detachable connection, or may be integrated; It may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and may be an internal connection of two elements or an interaction relationship of two elements unless explicitly defined otherwise.
  • the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
  • a handwriting input device comprising a display component, a magnetic signal sensing component disposed at any position within 100 mm of the display component in front of or behind the display component, and the magnetic signal sensing group Correspondingly disposed magnetic signal output member, all of the above components are disposed in the outer casing, and the main casing is further provided with a main board;
  • the magnetic signal sensing component comprises an inductive component and a detection control circuit connected to the inductive component, the inductive component comprising: a horizontal coding array, a vertical coding array disposed perpendicular to the horizontal coding array, the level Both the coded array and the vertical coded array are comprised of magnetic signal induction coil elements.
  • the horizontal coding array is composed of more than one magnetic signal induction coil unit; the vertical coding array is composed of more than one magnetic signal induction coil unit; the magnetic signal induction coil unit is connected by at least two magnetic induction coils through a differential line.
  • the magnetic induction coil is composed of a continuous loop wire of 1 to 10 turns.
  • the differential line of the series magnetic induction coil in the magnetic signal induction coil unit is in the magnetic induction positioning effective area.
  • the differential line of the series magnetic induction coil in the magnetic signal induction coil unit is outside the magnetic induction positioning effective area.
  • the detection control circuit comprises a plurality of select array switches, a pre-stage signal amplifier, a controllable gain amplifier, a band-pass amplifier, an AC-DC converter, an integration circuit, a DC amplifier, a charge and discharge switch, and a processor;
  • one side of the multi-select array switch is respectively connected to the horizontal magnetic induction coil and the vertical magnetic induction coil, and the other side of the multi-select array switch is connected to the preamplifier, the preamplifier and The controllable gain amplifier is connected;
  • controllable gain amplifier leads to the processor, and the other end of the controllable gain amplifier leads to the band pass amplifier, and the band pass amplifier is connected to the integration circuit through the AC/DC converter;
  • One end of the integration circuit leads to the processor through a DC amplifier, and the other end of the integration circuit leads to the charge and discharge switch, and the processor leads to the multiple select array switch and the charge and discharge switch, respectively.
  • An intermediate member is further disposed between the display component and the magnetic signal sensing component.
  • the magnetic signal output member is an electromagnetic stylus, and the first end of the electromagnetic stylus is an alternating electromagnetic signal source.
  • the magnetic signal induction coils disposed in the horizontal coding array and the magnetic signal induction coils in the vertical coding array are arranged in a cross arrangement.
  • the arrangement of the array is set to: the arrangement of the magnetic induction coils on any magnetic signal induction coil unit of any horizontal signal induction coil unit in the horizontal coding array and the vertical coding array and the magnetic induction coils on the adjacent magnetic signal induction coil units of the adjacent front or adjacent Repeatedly combined with the two-two arrangement at other locations;
  • the magnetic induction coils on the same magnetic signal induction coil unit are not continuously arranged at any position to participate in the two-two arrangement.
  • the two-two arrangement of the two magnetic induction coils adjacent to each other in the horizontal coding array and the vertical coding array is unique.
  • Step one preparation of nano-alloy powder: using iron powder, nickel powder, chromium powder and copper powder as the base powder; the iron powder used has a particle size of 60-100 ⁇ m, the purity is ⁇ 99%; the particle size of the nickel powder is 3 ⁇ 6 ⁇ m, purity>99%; chromium powder particle size 80 ⁇ 120 ⁇ m, purity ⁇ 99.9%; copper powder particle size is 50 ⁇ 130 ⁇ m, purity ⁇ 99.9%;
  • the mass ratio of the iron powder, the nickel powder, the chromium powder and the copper powder is 20-40:15-30:1-6:1-5, which is configured as a mixed powder, added with absolute ethanol and stirred uniformly, and placed in a sealed can.
  • Star ball milling was carried out at room temperature on a planetary ball mill at a ball milling time of 100-190 h to obtain Fe-Ni-Cu-Cr nanoalloy powder having a particle size of 1-10 nm, the base powder and absolute ethanol.
  • the mass ratio is 1-2:0.5-3;
  • the nano-alloy powder obtained in the first step is dried according to the mass ratio of the alloy, and then the powders Si, Al, Co, Ce and B are added, and the raw materials are placed in a vacuum induction furnace and smelted at 1000-1500 ° C. Repeated smelting 2-4 times, each time smelting 30-120min, after smelting, under the protection of helium After casting, the alloy ingot is obtained after cooling, and the cooled alloy ingot is placed in a sealed can, and then subjected to star ball milling at a normal temperature on a planetary ball mill.
  • the ball milling time is 50-200 h, and the ball milling obtains a particle size smaller than a 15 nm alloy powder matrix; the purity of the Si, Al, Co, Ce, and B is 99.8% or more, the Si particle diameter is 10-100 ⁇ m, the particle diameter of Al is 10-80 ⁇ m, and the particle diameter of Co is 10-120 ⁇ m, Ce has a particle size of 10-90 ⁇ m, and B has a particle size of 10-110 ⁇ m;
  • the alloy powder matrix prepared in the second step is sintered in an argon atmosphere sintering furnace, and is first calcined at 400-500 ° C for 1-3 h at a heating rate of 10-15 ° C / min during the sintering process, and then 30 a heating rate of -40 ° C / min is sintered at 1250-1350 ° C for 5-8h to obtain a base alloy;
  • the stepping three sintered base alloy is placed in a quenching furnace for quenching treatment, firstly at a quenching temperature of 1100-1200 ° C holding time 15-25 min, then after 5-10 min cooling to 50-80 ° C holding time 30-40 min;
  • the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 450-455 ° C, incubated for 1-2 h, heated again to 525-535 ° C, incubated for 2-3 h, and then heated to 720 ° C, After 3-4 h of heat preservation, the heating was stopped, the temperature was lowered to 150-170 ° C in 30-40 min, and then naturally cooled to room temperature to obtain an alloy;
  • the alloy obtained in the fifth step is subjected to a cutting process to obtain a coil of a desired shape.
  • the structure of the alloy is such that the alloy forms an ⁇ -Fe phase, a Co-doped ⁇ -Fe phase, and An amorphous phase composition in which an ⁇ -Fe phase and a Co-doped ⁇ -Fe phase constitute a first phase, and a particle size of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase in the first phase is between 1 and 15 nm
  • An interface phase is formed between the first phase and the amorphous phase, wherein the first phase has a saturation magnetization of about 1.52 T, and the phase interface is an interface having a thickness of 1-1.5 nm, wherein Ni is in the first phase.
  • the content is 1.5 times the content in the amorphous phase.
  • the preferred ball milling time is 152 h.
  • step 5 the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 455 ° C, held for 1.5 h, then heated again to 530 ° C, held for 2.5 h, and then heated to 720 ° C. , heat preservation for 3.5h, stop heating, reduce the temperature to 150-170 ° C in 30-40min, and then naturally cool to room temperature to obtain the alloy.
  • a handwriting input device includes a display component 801, and a magnetic signal sensing component disposed at any position on the display component 801, corresponding to the magnetic signal sensing component.
  • Magnetic signal output member, all of the above components are disposed in the outer casing, and a main board is also disposed in the outer casing;
  • the magnetic signal sensing component comprises an inductive component 100 and a detection control circuit 10 connected to the inductive component.
  • the inductive component 100 is plugged through the connector or directly thermocompression bonded to the detection control circuit.
  • the sensing component 100 comprises: a horizontal coding array 1010 and a horizontal The vertical coding array 1011 in which the coding array 1010 is vertically disposed, the horizontal coding array 1010 and the vertical coding array 1011 are each composed of a magnetic signal induction coil unit.
  • the magnetic signal induction coil unit (Fig. 3) is formed by connecting at least two magnetic induction coils 101 in series through a differential line 102.
  • the magnetic signal induction coil 101 is composed of 1 to 10 continuous loop wires
  • a differential line 102 between the magnetic induction coils 101 of the magnetic signal induction coil unit (Fig. 3) is disposed within the magnetic induction positioning effective area 118.
  • the detection control circuit 10 includes a plurality of select array switches 103, a pre-stage signal amplifier 104, a controllable gain amplifier 105, a band pass amplifier 106, an AC/DC converter 107, an integration circuit 108, a DC amplifier 109, and a charge and discharge switch 112.
  • processor 110 any processor capable of processing the detection control circuit 110;
  • one side of the array switch 103 is selected and the horizontal magnetic induction coil unit 1010 and the perpendicular magnetic
  • the induction coil unit 1011 is connected, the other side of the array switch 103 is connected to the preamplifier 104, and the preamplifier 104 is connected to the controllable gain amplifier 105.
  • controllable gain amplifier 105 leads to the processor 110, and the other end of the controllable gain amplifier 105 leads to the band pass amplifier 106, and the band pass amplifier 106 is connected to the integrating circuit 108 through the AC/DC converter 107;
  • One end of the integration circuit 108 leads to the processor 110 through the DC amplifier 109, the other end of the integration circuit 108 leads to the charge and discharge switch 112, the processor 110 leads to a plurality of select array switches 103 and charge and discharge switches 112;
  • the detection control circuit 10 sequentially scans the horizontal magnetic signal induction coil unit 1010 and the vertical magnetic signal induction coil unit 1011 of the horizontal coding array 1000 and the vertical coding array 1001, and sequentially limits the magnetic mutual inductance signals of the magnetic signal induction coil unit. Frequency-limited amplification, AC-DC conversion of the final amplified signal.
  • the converted DC level is controlled to periodically discharge and charge the integration circuit 108, and the presence or absence of charging of the integration circuit 108 per unit time directly determines whether the magnetic mutual inductance signal of the magnetic signal induction coil unit 101 is strong or weak. The stronger the determination, the closer it is to the alternating magnetic signal source 117.
  • an intermediate member 803 is further disposed between the display component 801 and the magnetic signal sensing component.
  • the display component 801 is disposed near one end of the user, the magnetic signal sensing component is disposed away from the user end, the intermediate member 803 may not be disposed, or any metal structure that is not fully conductive may be disposed.
  • the magnetic signal output member is an electromagnetic stylus 802, and the first end of the electromagnetic stylus 802 is provided with an alternating electromagnetic signal source 117.
  • the magnetic signal induction coil 101 disposed in the horizontal coding array 1010 and the magnetic signal induction coil 101 in the vertical coding array 1011 are arranged in a cross arrangement.
  • the arrangement is arranged such that the magnetic signal induction coil 101 at any position on the same magnetic signal induction coil unit (FIG. 3) is arranged in tandem with the magnetic signal induction coil 101 adjacent to or adjacent to the magnetic signal induction coil 101 in series. It is not repeated with the combination of two or two at other positions.
  • the magnetic induction coil 101 on the same series magnetic signal induction coil unit does not continuously appear in any position to participate in the two-two arrangement.
  • the two-two arrangement of any two adjacent magnetic induction coils 101 in the horizontal coding array 1010 and the vertical coding array 1011 are unique in the same array; the horizontal coding array 1010 and The arrangement of the two pairs of adjacent magnetic induction coils 101 of the vertical code array 1011 may be the same.
  • Step one preparation of nano-alloy powder: using iron powder, nickel powder, chromium powder and copper powder as the base powder; the iron powder used has a particle size of 60-100 ⁇ m, the purity is ⁇ 99%; the particle size of the nickel powder is 3 ⁇ 6 ⁇ m, purity>99%; chromium powder particle size 80 ⁇ 120 ⁇ m, purity ⁇ 99.9%; copper powder particle size is 50 ⁇ 130 ⁇ m, purity ⁇ 99.9%;
  • the mass ratio of the iron powder, the nickel powder, the chromium powder and the copper powder is 20-40:15-30:1-6:1-5, which is configured as a mixed powder, added with absolute ethanol and stirred uniformly, and placed in a sealed can.
  • Star ball milling was carried out at room temperature on a planetary ball mill at a ball milling time of 100-190 h to obtain Fe-Ni-Cu-Cr nanoalloy powder having a particle size of 1-10 nm, the base powder and absolute ethanol.
  • the mass ratio is 1-2:0.5-3;
  • the nano-alloy powder obtained in the first step is dried according to the mass ratio of the alloy, and then the powders Si, Al, Co, Ce and B are added, and the raw materials are placed in a vacuum induction furnace and smelted at 1000-1500 ° C. Repeated smelting 2-4 times, each time smelting 30-120min, after the smelting is completed, the slab is processed under the protection of helium, and after cooling, an alloy ingot is obtained, and the cooled alloy ingot is placed in a sealed can. Star ball milling is carried out at room temperature on a planetary ball mill. The ball milling time is 50-200 h.
  • Ball milling results in an alloy powder matrix having a particle size of less than 15 nm; the purity of the Si, Al, Co, Ce and B is above 99.8%. , the particle size of Si is 10-100 ⁇ m, the particle size of Al is 10-80 ⁇ m, the particle size of Co is 10-120 ⁇ m, the particle size of Ce is 10-90 ⁇ m, and the particle size of B is 10-110 ⁇ m;
  • the alloy powder matrix prepared in the second step is sintered in an argon atmosphere sintering furnace and sintered.
  • the process is first pre-burned at 400-500 ° C for 1-3 h at a heating rate of 10-15 ° C / min, and then sintered at 125-40350 ° C for 5-8 h at a heating rate of 30-40 ° C / min to obtain a base alloy;
  • the stepping three sintered base alloy is placed in a quenching furnace for quenching treatment, firstly at a quenching temperature of 1100-1200 ° C holding time 15-25 min, then after 5-10 min cooling to 50-80 ° C holding time 30-40 min;
  • the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 450-455 ° C, incubated for 1-2 h, heated again to 525-535 ° C, incubated for 2-3 h, and then heated to 720 ° C, After 3-4 h of heat preservation, the heating was stopped, the temperature was lowered to 150-170 ° C in 30-40 min, and then naturally cooled to room temperature to obtain an alloy;
  • the alloy obtained in the fifth step is subjected to a cutting process to obtain a coil of a desired shape.
  • the alloy has a structure in which the alloy forms an ⁇ -Fe phase, a Co-doped ⁇ -Fe phase, and an amorphous phase composition, wherein the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase constitute a first phase,
  • the particle size of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase in the first phase is between 1 and 15 nm, and an interface phase is formed between the first phase and the amorphous phase, wherein the saturation magnetization of the first phase It is about 1.52 T, and the phase interface is an interface having a thickness of 1-1.5 nm, wherein the content of Ni in the first phase is 1.5 times that in the amorphous phase.
  • the preferred ball milling time is 152 h.
  • step 5 the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 455 ° C, held for 1.5 h, then heated again to 530 ° C, held for 2.5 h, then Heat to 720 ° C, heat for 3.5 h, stop heating, reduce the temperature to 150-170 ° C in 30-40 min, and then naturally cool to room temperature to obtain the alloy.
  • VSM Vibrating Sample Magnetometer
  • the wear amount is reduced, the wear resistance is increased by 20% to 30% than that of the alloy without Ce, and the content of Ce is increased to cause the austenite in the alloy body.
  • the reduction of the body content can effectively improve the microstructure of the alloy surface, thereby improving the corrosion resistance of the alloy; however, it is also found that the alloy increases with a certain increase in the Ce content.
  • the friction resistance and corrosion resistance are enhanced, but the magnetic permeability tends to decrease. This is because the increase in the grain size of the alloy after the Ce is increased to a certain extent, the bottleneck is reduced, so the content of Ce increases.
  • Abrasion test It was carried out on a RRT2III reciprocating friction wear machine.
  • the pair of wear test specimens was a 70 mm ⁇ 1317 mm ⁇ 10 mm white corundum sand bar with a particle size of 200 mesh and a surface roughness of 018 to 014 ⁇ m.
  • the wear amount of alloy without added Ce is 0.019/mg;
  • Corrosion test H 2 SO 4 (5%), HCl (5%) and NaOH (5%) were selected for the corrosive medium.
  • the samples were all etched for 24 h under micro-boiling conditions.
  • the corrosion test was carried out by weight loss method. Polishing, before and after etching, immersed in acetone, alcohol, and blown dry, and then weighed the weight and corrosion rate before and after corrosion with a one-tenth of a thousand.
  • the sintering is performed by the secondary heat treatment, and after the preheating is performed, the temperature is raised to perform the main sintering. It has been found that the initial magnetic permeability after secondary heat treatment is better than the initial magnetic permeability after one preheat treatment, and its magnetic permeability is higher than that of single-heated alloy by 5-10%, with the increase of temperature. The alloy undergoes structural relaxation and transitions to a stable low internal energy state.
  • the heating rate of the secondary heating process also needs to be much higher than the heating rate of the first preheating process: "Firstly preheated at 400-500 ° C for 1-3 h at a heating rate of 10-15 ° C / min, then with 30 The heating rate of -40 ° C / min is sintered at 1250-1350 ° C for 5-8 h" preferably "first calcined at 400 ° C / C ° C for 2 h at a heating rate of 12 ° C / min, then at a heating rate of 35 ° C / min at 1250 - Sintering at 1350 ° C for 7 h", the second heating rate is almost three times the heating rate of the first time.
  • the alloy body has a certain adaptability due to the previous preheating, and the temperature is rapidly increased.
  • the alloy of the material is made faster and crystallized more fully, and the coupling between the grains is stronger, so that the effective anisotropy constant of the material is lower and the initial magnetic permeability is higher.
  • the initial permeability of the alloy after sintering by secondary heat treatment is higher than the initial permeability of the alloy after sintering by a single heat treatment of 3-7%, and the second heating rate is three times that of the first.
  • the initial magnetic permeability of the alloy obtained after one heating rate is increased by 4-8% compared with the initial magnetic permeability of the alloy after sintering by ordinary secondary heat treatment;
  • the second stage in the quenching step of the present invention employs a rapid quenching step. It has been found through research that a rapid quenching step can make the alloy have better performance and can improve the impact toughness value and hardness value of the alloy. And there is no influence on the magnetic properties.
  • a rapid quenching step can make the alloy have better performance and can improve the impact toughness value and hardness value of the alloy. And there is no influence on the magnetic properties.
  • the internal structure of the material undergoes phase transformation and toughening, and the Ce element can be partially melted, so that the Ce in the binder phase can not be precipitated in the quenching condition, which is solid.
  • the effect of fusion strengthening can greatly improve the impact toughness and hardness of the alloy.
  • the impact toughness can reach 0.72-0.89 MJ/m 2 , and the ratio of the alloy materials is considered as follows: the ratio of the alloy is (Fe 0.6 Co 0.4 ) 50 (Ni 0.65 Al 0.3 Ce 0.05 ) 35 Cu 3 B 6 Si 3 Cr 3 , when the Ce content is about 1.75%, the impact toughness and various properties are optimal, the impact toughness is 0.85 MJ/m 2 , and the Rockwell hardness value is 38 HRC.
  • the alloy forms an ⁇ -Fe phase, a Co-doped ⁇ -Fe phase, and an amorphous phase, wherein the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase constitute a first phase,
  • the particle size of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase in one phase is between 1 and 15 nm, and an interface phase is formed between the first phase and the amorphous phase, wherein the saturation magnetization of the first phase is about 1.52T, the phase interface is an interface having a thickness of 1-1.5 nm, wherein the content of Ni in the first phase is 1.5 times the content in the amorphous phase;
  • the invention firstly prepares a nano-alloy powder, and then adds a metal for melting, so that Ni can enter into the first phase composed of an ⁇ -Fe phase and a Co-doped ⁇ -Fe phase, and it is found that when Ni is The content of the first phase is 1.5 times the content of the amorphous phase, and the saturation magnetization of the alloy is the largest, and the saturation magnetization of the alloy is about 1.57T.
  • the annealing temperature in step 5 has a certain influence on the grain diameter of the alloy.
  • the first heating to 455 ° C, heat preservation for 1.5 h first make the elements in the first phase preferentially nucleate, then heat again to 530 ° C, heat preservation 2.5 h, then Heating to 720 ° C, holding for 3.5 h, so that the amorphous phase can get a uniform fine nanostructure at this time.
  • the temperature is raised again, it is found that when the temperature is raised to 750 ° C, the grain size is sharply increased, which increases the magnetic anisotropy, and the large crystal grains hinder the displacement of the domain wall and the rotation of the magnetic moment.
  • the present invention adopts an optimum annealing temperature of "first heating to 455 ° C, holding for 1.5 h, first preferentially nucleating the elements in the first phase, then heating to 530 ° C again, holding for 2.5 h, and then heating to 720 ° C, Insulation 3.5h".
  • the difference from the embodiment is that the differential line 102 is disposed outside the magnetic signal positioning effective area 118, and the magnetic induction coil 2 is transparent or opaque conductive material, material and The material of the first embodiment is the same, and the horizontal coding array 1010 and the magnetic induction coil 101 of the horizontal coding array 1011 are disposed in different devices.
  • the display component 801 is disposed away from the user end, the writing back surface of the sensing element 100 of the magnetic signal sensing component, and the middle members are any transparent members, and the sensing component 100 of the magnetic signal sensing component is disposed directly in front of the display component 801.
  • the alternating magnetic signal source 117 on the electromagnetic stylus is close to the magnetic signal sensing group.
  • several adjacent magnetic induction coils 101 in the horizontal coding array 1010 near the alternating magnetic signal source 117 for example, x1, x5, x7 and the alternating magnetic signal source 117 are mutually inductive to generate a magnetic mutual inductance signal.
  • the alternating magnetic signal source 117 is adjacent to the vertical encoding array 1011, and several adjacent magnetic induction coil units (Fig. 3) of the vertical vertical encoding array 1011 near the alternating magnetic signal source 117, such as y6, y2, y4 and intersection
  • the magnetically variable signal source 117 is mutually inductive to generate a magnetic mutual inductance signal.
  • the combination of several adjacent magnetic induction coils 101 generating the magnetic mutual inductance signal is y6y2, y2y6, y2y4, y4y2, y6y2y4 or y4y2y6, and the combined code is the current alternating magnetic signal source 117 in the vertical coding.
  • the vertical coordinate coding in the array 1011 and the magnetic signal localization effective area 118 produces a magnetic induction coil 101 which is determined to be closer to the alternating magnetic signal source 117.
  • x1, x5, x7 or y6, y2, y4 of several adjacent magnetic induction coils 101 close to the alternating magnetic signal source 117 is encoded as x1x5, x5x1, x5x7, x7x5, x1x5x7 or x7x5x1 and y6y2, y2y6, y2y4, y4y2, Y6y2y4 or y4y2y6 represents the approximate absolute coordinate position of the alternating magnetic signal source 117 in the horizontal direction and the vertical direction of the detected magnetic signal localization effective area 118 of the sensing element 100.
  • the alternating magnetic signal source 117 determines the magnetic induction coil 101 having the strongest magnetic mutual inductance signal at a substantially absolute coordinate position, such as the y2 position of x5 and y6y2y4 of x1x5x7, and then the intensity of the induced magnetic mutual inductance of the magnetic induction coil on both sides of the strongest magnetic induction coil.
  • the ratio determines the fine relative position of the magnetic induction coil 101 on the opposite sides of the alternating magnetic signal source 117 in the region of the y2 channel of x5 and y6y2y4 of the strongest magnetic induction coil x1x5x7.
  • the ratio of the magnetic induction coils x1, x7 and y6, y4 magnetic mutual inductance signal strengths on both sides of the strongest magnetic induction coils x5 and y2 is 1:1, indicating that the alternating magnetic signal source 117 is at the center position of the strongest magnetic induction coils x5 and y2 channels, which is larger than 1:1, it is determined that the alternating magnetic signal source 117 is in the region of the strongest magnetic induction coil x5 and y2 channels and is biased to one side of the secondary strong magnetic induction coil, and the offset distance is proportional to the ratio, and the distance is less than 1:1.
  • the variable magnetic signal source 117 is in the region of the strongest magnetic induction coil x5 and y2 channels and is biased toward the other On the side of the secondary strong magnetic induction coil unit, the offset distance is inversely proportional to this ratio.
  • the precise positioning information is transmitted from the magnetic signal sensing component to the display component through the main board for display, and the position information expressed by the user through the electromagnetic stylus can be accurately expressed.
  • Step one preparation of nano-alloy powder: using iron powder, nickel powder, chromium powder and copper powder as the base powder; the iron powder used has a particle size of 60-100 ⁇ m, the purity is ⁇ 99%; the particle size of the nickel powder is 3 ⁇ 6 ⁇ m, purity>99%; chromium powder particle size 80 ⁇ 120 ⁇ m, purity ⁇ 99.9%; copper powder particle size is 50 ⁇ 130 ⁇ m, purity ⁇ 99.9%;
  • the mass ratio of the iron powder, the nickel powder, the chromium powder and the copper powder is 20-40:15-30:1-6:1-5, which is configured as a mixed powder, added with absolute ethanol and stirred uniformly, and placed in a sealed can.
  • Star ball milling was carried out at room temperature on a planetary ball mill at a ball milling time of 100-190 h to obtain Fe-Ni-Cu-Cr nanoalloy powder having a particle size of 1-10 nm, the base powder and absolute ethanol.
  • the mass ratio is 1-2:0.5-3;
  • the nano-alloy powder obtained in the first step is dried according to the mass ratio of the alloy, and then the powders Si, Al, Co, Ce and B are added, and the raw materials are placed in a vacuum induction furnace and smelted at 1000-1500 ° C. Repeated smelting 2-4 times, each time smelting 30-120min, after the smelting is completed, the slab is processed under the protection of helium, and after cooling, an alloy ingot is obtained, and the cooled alloy ingot is placed in a sealed can. Star ball milling is carried out at room temperature on a planetary ball mill. The ball milling time is 50-200 h.
  • Ball milling results in an alloy powder matrix having a particle size of less than 15 nm; the purity of the Si, Al, Co, Ce and B is above 99.8%. , the particle size of Si is 10-100 ⁇ m, the particle size of Al is 10-80 ⁇ m, the particle size of Co is 10-120 ⁇ m, the particle size of Ce is 10-90 ⁇ m, and the particle size of B is 10-110 ⁇ m;
  • the alloy powder matrix prepared in the second step is sintered in an argon atmosphere sintering furnace, and is first calcined at 400-500 ° C for 1-3 h at a heating rate of 10-15 ° C / min during the sintering process, and then 30 a heating rate of -40 ° C / min is sintered at 1250-1350 ° C for 5-8h to obtain a base alloy;
  • the stepping three sintered base alloy is placed in a quenching furnace for quenching treatment, firstly at a quenching temperature of 1100-1200 ° C holding time 15-25 min, then after 5-10 min cooling to 50-80 ° C holding time 30-40 min;
  • the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 450-455 ° C, incubated for 1-2 h, heated again to 525-535 ° C, incubated for 2-3 h, and then heated to 720 ° C, After 3-4 h of heat preservation, the heating was stopped, the temperature was lowered to 150-170 ° C in 30-40 min, and then naturally cooled to room temperature to obtain an alloy;
  • the alloy obtained in the fifth step is subjected to a cutting process to obtain a coil of a desired shape.
  • the alloy has a structure in which the alloy forms an ⁇ -Fe phase, a Co-doped ⁇ -Fe phase, and an amorphous phase composition, wherein the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase constitute a first phase,
  • the particle size of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase in the first phase is between 1 and 15 nm, and an interface phase is formed between the first phase and the amorphous phase, wherein the saturation magnetization of the first phase It is about 1.52 T, and the phase interface is an interface having a thickness of 1-1.5 nm, wherein the content of Ni in the first phase is 1.5 times that in the amorphous phase.
  • the preferred ball milling time is 152 h.
  • step 5 the base alloy obtained by quenching in step four is placed in an annealing furnace of an argon atmosphere, first heated to 455 ° C, held for 1.5 h, then heated again to 530 ° C, held for 2.5 h, and then heated to 720 ° C. , heat preservation for 3.5h, stop heating, reduce the temperature to 150-170 ° C in 30-40min, and then naturally cool to room temperature to obtain the alloy.
  • VSM Vibrating Sample Magnetometer
  • the wear amount is reduced, the wear resistance is increased by 20% to 30% than that of the alloy without Ce, and the content of Ce is increased to cause the austenite in the alloy body.
  • the reduction of the body content can effectively improve the microstructure of the alloy surface, thereby improving the corrosion resistance of the alloy; however, it is also found that the alloy increases with a certain increase in the Ce content.
  • the friction resistance and corrosion resistance are enhanced, but the magnetic permeability tends to decrease. This is because the increase in the grain size of the alloy after the Ce is increased to a certain extent, the bottleneck is reduced, so the content of Ce increases.
  • Abrasion test carried out on RRT2III reciprocating friction wear machine.
  • the pair of wear test specimens is 70mm ⁇ 1317mm ⁇ 10mm white corundum sand bar with a particle size of 200 mesh and the surface roughness of the sample is 018 ⁇ Between 014 ⁇ m.
  • the wear amount of alloy without added Ce is 0.019/mg;
  • Corrosion test H 2 SO 4 (5%), HCl (5%) and NaOH (5%) were selected for the corrosive medium.
  • the samples were all etched for 24 h under micro-boiling conditions.
  • the corrosion test was carried out by weight loss method. Polishing, before and after etching, immersed in acetone, alcohol, and blown dry, and then weighed the weight and corrosion rate before and after corrosion with a one-tenth of a thousand.
  • the sintering is performed by the secondary heat treatment, and after the preheating is performed, the temperature is raised to perform the main sintering. It has been found that the initial magnetic permeability after secondary heat treatment is better than the initial magnetic permeability after one preheat treatment, and its magnetic permeability is higher than that of single-heated alloy by 5-10%, with the increase of temperature. The alloy undergoes structural relaxation and transitions to a stable low internal energy state.
  • the heating rate of the secondary heating process also needs to be much higher than the heating rate of the first preheating process: "Firstly preheated at 400-500 ° C for 1-3 h at a heating rate of 10-15 ° C / min, then with 30 The heating rate of -40 ° C / min is sintered at 1250-1350 ° C for 5-8 h" preferably "first calcined at 400-500 ° C for 2 h at a heating rate of 12 ° C / min, then at a heating rate of 35 ° C / min Sintered at 1250-1350 ° C for 7 h", the second heating rate is almost three times the heating rate of the first time.
  • the alloy body has a certain adaptability due to the previous preheating, and the material is heated by rapid heating.
  • the alloy is rapid and crystallized more fully, and the coupling between the crystal grains is stronger, so that the effective anisotropy constant of the material is lower and the initial magnetic permeability is higher.
  • the initial alloy after sintering is treated by secondary heat treatment.
  • the magnetic permeability is higher than the initial permeability of the alloy after sintering in a single heat treatment of 3-7%, and the initial magnetic permeability of the alloy obtained after the second heating rate is three times the first heating rate.
  • the initial permeability of the alloy after sintering in the ordinary secondary heat treatment is increased by 4-8%;
  • the second stage in the quenching step of the present invention employs a rapid quenching step. It has been found through research that a rapid quenching step can make the alloy have better performance and can improve the impact toughness value and hardness value of the alloy. And there is no influence on the magnetic properties.
  • a rapid quenching step can make the alloy have better performance and can improve the impact toughness value and hardness value of the alloy. And there is no influence on the magnetic properties.
  • the internal structure of the material undergoes phase transformation and toughening, and the Ce element can be partially melted, so that the Ce in the binder phase can not be precipitated in the quenching condition, which is solid.
  • the effect of fusion strengthening can greatly improve the impact toughness and hardness of the alloy.
  • the impact toughness can reach 0.72-0.89 MJ/m 2 , and the ratio of the alloy materials is considered as follows: the ratio of the alloy is (Fe 0.6 Co 0.4 ) 50 (Ni 0.65 Al 0.3 Ce 0.05 ) 35 Cu 3 B 6 Si 3 Cr 3 , when the Ce content is about 1.75%, the impact toughness and various properties are optimal, the impact toughness is 0.85 MJ/m 2 , and the Rockwell hardness value is 38 HRC.
  • the alloy forms an ⁇ -Fe phase, a Co-doped ⁇ -Fe phase, and an amorphous phase, wherein the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase constitute a first phase,
  • the particle size of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase in one phase is between 1 and 15 nm, and an interface phase is formed between the first phase and the amorphous phase, wherein the saturation magnetization of the first phase is about 1.52T, the phase interface is an interface having a thickness of 1-1.5 nm, wherein the content of Ni in the first phase is 1.5 times the content in the amorphous phase;
  • the invention firstly prepares a nano-alloy powder, and then adds a metal for melting, so that Ni can enter into the first phase composed of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase, after research and development.
  • a metal for melting so that Ni can enter into the first phase composed of the ⁇ -Fe phase and the Co-doped ⁇ -Fe phase, after research and development.
  • the saturation magnetization of the alloy is the largest, and the saturation magnetization of the alloy is about 1.57T.
  • the annealing temperature in step 5 has a certain influence on the grain diameter of the alloy.
  • the first heating to 455 ° C, heat preservation for 1.5 h first make the elements in the first phase preferentially nucleate, then heat again to 530 ° C, heat preservation 2.5 h, then Heating to 720 ° C, holding for 3.5 h, so that the amorphous phase can get a uniform fine nanostructure at this time.
  • the temperature is raised again, it is found that when the temperature is raised to 750 ° C, the grain size is sharply increased, which increases the magnetic anisotropy, and the large crystal grains hinder the displacement of the domain wall and the rotation of the magnetic moment.
  • the present invention adopts an optimum annealing temperature of "first heating to 455 ° C, holding for 1.5 h, first preferentially nucleating the elements in the first phase, then heating to 530 ° C again, holding for 2.5 h, and then heating to 720 ° C, Insulation 3.5h".

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Abstract

本发明公开了一种手写输入装置，包括显示组件，设置在显示组件上任意位置的磁信号感应组件，与磁信号感应组件对应设置的磁信号输出件，上述所有部件均设置在外壳中，外壳内还设有主板；其中，磁信号感应组件包括感应元件和连接感应元件的检测控制电路，感应元件包括：水平编码阵列、与水平编码阵列垂直设置的垂直编码阵列，水平编码阵列与垂直编码阵列均由磁信号感应线圈单元组成。本发明旨在解决现有技术的磁感应装置检测时间长、反应速度慢、定位感应的精度低、长距离移动累积误差大和装置复杂的问题。

Description

一种手写输入装置 技术领域
本发明涉及磁感应领域，特别涉及一种手写输入装置。
背景技术
随着电子产品和各类数控机床的进步与发展，对距离和二维面的位置传感感应器的应用和需求越来越广泛。
现有的手写输入装置一般采用二维两个方向的若干地理电磁感应线圈来扫描检测电磁笔。
专利号为CN201320756682.X，“电磁天线的单层布线系统”公布了一种在二维面两个方向设置若干独立电磁感应通道线圈来构成磁信号定位感应器，可用来扫描检测定位电磁笔以实现手写输入触控装置，这种磁信号定位感应器每个通道位置的设置一独立的电磁感应通道线圈。
当磁信号定位感应器中的独立电磁感应通道线圈数量累积到一定程度，那么要区域扫描检测这样的磁信号定位感应器需要很长的时间，反映速度慢，定位感应的精度低，长距离移动累积误差大，这样的磁信号定位感应器十分复杂。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本发明的主要目的在于提供一种手写输入装置，旨在解决现有技术的磁感应装置检测时间长、反应速度慢、定位感应的精度低、长距离移动累积误差大和装置复杂的问题。
为实现上述目的，本发明提供一种手写输入装置，包括显示组件，设置在所述显示组件前面或者后面距离显示组件100毫米范围内任意位置的磁信号感应组件，与所述磁信号感应组件对应设置的磁信号输出件，上述所有部件均设置在外壳中，所述外壳内还设有主板；
其特征在于，所述磁信号感应组件包括感应元件和连接所述感应元件的检 测控制电路，所述感应元件包括：水平编码阵列、与所述水平编码阵列垂直设置的垂直编码阵列，所述水平编码阵列与所述垂直编码阵列均由磁信号感应线圈单元组成。
所述水平编码阵列由一个以上的磁信号感应线圈单元组成；所述垂直编码阵列由一个以上的磁信号感应线圈单元组成；所述磁信号感应线圈单元由至少两个磁感应线圈通过差分线串联而成；磁感应线圈由1圈到10圈的连续环形导线构成。
所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区内。
所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区外。
所述检测控制电路包括多选一阵列开关、前级信号放大器、可控增益放大器、带通放大器、交直流变换器、积分电路、直流放大器、充放电开关和处理器；
其中，所述多选一阵列开关一侧分别与所述水平磁感应线圈和所述垂直磁感应线圈连接，所述多选一阵列开关另一侧与所述前级放大器连接，所述前级放大器与所述可控增益放大器连接；
所述可控增益放大器一端通向所述处理器，所述可控增益放大器另一端通向所述带通放大器，所述带通放大器通过所述交直流变换器与所述积分电路连接；
所述积分电路一端通过直流放大器通向所述处理器，所述积分电路另一端通向所述充放电开关，所述处理器分别通向所述多选一阵列开关和所述充放电开关。
所述显示组件与所述磁信号感应组件之间还设有中间件。
所述磁信号输出件为电磁触控笔，所述电磁触控笔首端为交变电磁信号源。
设置在所述水平编码阵列中的磁信号感应线圈与所述垂直编码阵列中的磁信号感应线圈相互交叉排列组合设置。
排列组合设置为：水平编码阵列和垂直编码阵列中任意磁信号感应线圈单 元上任意磁信号感应圈与相邻前或相邻后其它的磁信号感应线圈单元上的磁感应线圈的两两排列组合不与其它位置上的两两排列组合重复；
并同时遵循同一所述磁信号感应线圈单元上的磁感应线圈在任意位置不连续出现参与两两排列组合。
所述水平编码阵列和垂直编码阵列中任意位置相邻的两个磁感应线圈的两两排列组合是唯一的。
有益效果如下：
这种磁信号定位感应器的磁信号线圈单元由多个磁感应通道线圈串联而成，每一个串联磁信号感应线圈单元可以同时检测多个位置的交变磁信号源，这样电磁感应通道线圈的引出线的布线就更加简单，磁信号定位感应器对交变此信号源的扫描检测锁定时间短，速度快，定位感应的精度高、长距离移动累积误差小和装置和排线简单清楚。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1本发明整体结构示意图
图2为本发明磁信号感应组件结构示意图
图3为本发明差分线设置在有效区内的磁感应单元结构示意图。
图4为本发明差分线设置在有效区外的磁感应单元结构示意图。
图5为本发明差分线设置在有效区内的水平阵列编码结构示意图。
图6为本发明差分线设置在有效区内的垂直阵列编码结构示意图。
图7为本发明差分线设置在有效区内的感应元件示意图。
图8为本发明差分线设置在有效区外的水平阵列编码结构示意图。
图9为本发明差分线设置在有效区外的垂直阵列编码结构示意图。
图10为本发明差分线设置在有效区外的感应元件示意图。
图11为本发明其他一种实施例结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。
基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明，本发明实施例中所有方向性指示(诸如上、下、左、右、前、后……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
在本发明中如涉及“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。
在本发明的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“连接”、“固定”等应做广义理解，例如，“固定”可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
另外，本发明各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本发明要求的保护范围之内。
一种手写输入装置，包括显示组件，设置在所述显示组件前面或者后面距离显示组件100毫米范围内任意位置的磁信号感应组件，与所述磁信号感应组 件对应设置的磁信号输出件，上述所有部件均设置在外壳中，所述外壳内还设有主板；
其特征在于，所述磁信号感应组件包括感应元件和连接所述感应元件的检测控制电路，所述感应元件包括：水平编码阵列、与所述水平编码阵列垂直设置的垂直编码阵列，所述水平编码阵列与所述垂直编码阵列均由磁信号感应线圈单元组成。
所述水平编码阵列由一个以上的磁信号感应线圈单元组成；所述垂直编码阵列由一个以上的磁信号感应线圈单元组成；所述磁信号感应线圈单元由至少两个磁感应线圈通过差分线串联而成；磁感应线圈由1圈到10圈的连续环形导线构成。
所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区内。
所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区外。
所述检测控制电路包括多选一阵列开关、前级信号放大器、可控增益放大器、带通放大器、交直流变换器、积分电路、直流放大器、充放电开关和处理器；
其中，所述多选一阵列开关一侧分别与所述水平磁感应线圈和所述垂直磁感应线圈连接，所述多选一阵列开关另一侧与所述前级放大器连接，所述前级放大器与所述可控增益放大器连接；
所述可控增益放大器一端通向所述处理器，所述可控增益放大器另一端通向所述带通放大器，所述带通放大器通过所述交直流变换器与所述积分电路连接；
所述积分电路一端通过直流放大器通向所述处理器，所述积分电路另一端通向所述充放电开关，所述处理器分别通向所述多选一阵列开关和所述充放电开关。
所述显示组件与所述磁信号感应组件之间还设有中间件。
所述磁信号输出件为电磁触控笔，所述电磁触控笔首端为交变电磁信号源。
设置在所述水平编码阵列中的磁信号感应线圈与所述垂直编码阵列中的磁信号感应线圈相互交叉排列组合设置。
排列组合设置为：水平编码阵列和垂直编码阵列中任意磁信号感应线圈单元上任意磁信号感应圈与相邻前或相邻后其它的磁信号感应线圈单元上的磁感应线圈的两两排列组合不与其它位置上的两两排列组合重复；
并同时遵循同一所述磁信号感应线圈单元上的磁感应线圈在任意位置不连续出现参与两两排列组合。
所述水平编码阵列和垂直编码阵列中任意位置相邻的两个磁感应线圈的两两排列组合是唯一的。
所述磁感应线圈的材质为合金材料，该合金材料由以下质量配比的合金制成：(FexCo1-x)a(Ni1-y-zAlyCez)bCucBdSieCrf，其中a＝30-60，b＝30-55，c＝1-5，d＝1-8，e＝1-5，f＝1-5，x＝0.1-0.8，y＝0.1-0.5，z＝0.01-0.08；该合金的制备方法包括以下步骤：
步骤一，纳米合金粉体的制备：采用铁粉、镍粉、铬粉和铜粉作为基础粉体；所采用的铁粉的颗粒度60～100μm，纯度≥99％；镍粉的颗粒度为3～6μm，纯度>99％；铬粉的颗粒度80～120μm，纯度≥99.9％；铜粉的颗粒度为50～130μm，纯度≥99.9％；
所述铁粉、镍粉、铬粉和铜粉的质量比为20-40:15-30:1-6:1-5，配置成混合粉末，加入无水乙醇搅拌均匀，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨时间为100-190h，获得颗粒尺寸为1-10nm的Fe-Ni-Cu-Cr纳米合金粉末，所述基础粉体与无水乙醇的质量比为1-2:0.5-3；
步骤二，合金粉体基体的制备
按照合金的质量配比将步骤一所得到的纳米合金粉体进行干燥后加入粉体Si、Al、Co、Ce和B，将上述原料放入真空感应炉中，在1000-1500℃下进行熔炼，反复熔炼2-4次，每次熔炼30-120min，熔炼完毕后，在氦气的保护下进行 铸坯，冷却后得到合金铸锭，将冷却后的合金铸锭，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨的时间为50-200h，球磨得到粒度为小于15nm的合金粉体基体；所述Si，Al，Co，Ce和B的纯度达到99.8％以上，Si粒径为粒径为10-100μm，Al的粒径为10-80μm，Co的粒径为10-120μm，Ce的粒径为10-90μm，B的粒径为10-110μm；
步骤三，烧结
将步骤二所制得的合金粉体基体在氩气气氛烧结炉中烧结成型，在烧结过程，首先以10-15℃/min的升温速率在400-500℃预烧1-3h，然后以30-40℃/min的升温速率在1250-1350℃烧结5-8h得到基础合金；
步骤四，淬火
将步骤三烧结的基础合金置于淬火炉内进行淬火处理，首先在淬火温度为1100-1200℃保温时间15-25min，之后在5-10min内降温至50-80℃保温时间30-40min；
步骤五，退火处理
将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热到450-455℃，保温1-2h，再次加热到525-535℃，保温2-3h，然后加热到720℃，保温3-4h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金；
步骤六，加工
将步骤五所制得的合金进行切割加工制得所需形状的线圈。
该实施例的优选合金的配比为：
(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3；
更加优选该合金的结构为：该合金形成了α-Fe相、掺杂Co的α-Fe相和 非晶相组成，其中α-Fe相和掺杂Co的α-Fe相组成第一相，第一相中α-Fe相和掺杂Co的α-Fe相的颗粒尺寸在1-15nm之间，第一相与非晶相之间形成了一个界面相，其中第一相的饱和磁化强度约为1.52T，相界面为一个厚度为1-1.5nm的界面，其中Ni在第一相中的含量为在非晶相中的含量的1.5倍。
步骤一中，优选的球磨时间为152h。
步骤五中更加优选，将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热至455℃，保温1.5h，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金。
实施例1
如图1、图2、图3和图5～图7所示，一种手写输入装置，包括显示组件801，设置在显示组件801上任意位置的磁信号感应组件，与磁信号感应组件对应设置的磁信号输出件，上述所有部件均设置在外壳中，外壳内还设有主板；
其中，磁信号感应组件包括感应元件100和连接感应元件的检测控制电路10，感应元件100透过连接器插接或直接热压焊接到检测控制电路，感应元件100包括：水平编码阵列1010与水平编码阵列1010垂直设置的垂直编码阵列1011，水平编码阵列1010与垂直编码阵列1011均由磁信号感应线圈单元组成。
优选地，磁信号感应线圈单元(图3)由至少两个磁感应线圈101通过差分线102串联而成。
磁信号感应线圈101由1圈到10圈连续环形导线构成；
磁信号感应线圈单元(图3)的磁感应线圈101之间的差分线102设置在磁感应定位有效区118内。
优选地，检测控制电路10包括多选一阵列开关103、前级信号放大器104、可控增益放大器105、带通放大器106、交直流变换器107、积分电路108、直流放大器109、充放电开关112和处理器110；
其中，多选一阵列开关103一侧分别与水平磁感应线圈单元1010和垂直磁 感应线圈单元1011连接，多选一阵列开关103另一侧与前级放大器104连接，前级放大器104与可控增益放大器105连接；
可控增益放大器105一端通向处理器110，可控增益放大器105另一端通向带通放大器106，带通放大器106通过交直流变换器107与积分电路108连接；
积分电路108一端通过直流放大器109通向处理器110，积分电路108另一端通向充放电开关112，处理器110分别通向多选一阵列开关103和充放电开关112；
所述检测控制电路10依次扫描接入水平编码阵列1000和垂直编码阵列1001的水平磁信号感应线圈单元1010和垂直磁信号感应线圈单元1011，对磁信号感应线圈单元的磁互感信号依次进行限幅限频放大，对最终放大信号进行交直流变换。
变换后的直流电平受控制对积分电路108进行定期放电和充电，单位时间内对积分电路108充电的有无与高低，直接对应判定磁信号感应线圈单元101的磁互感信号的有无与强弱，越强判定越靠近交变磁信号源117。
优选地，显示组件801与磁信号感应组件之间还设有中间件803。
显示组件801设置在靠近使用者一端，磁信号感应组件设置在远离使用者一端，中间件803可以不设置，或者设置任意不整面导电的金属结构件。
优选地，磁信号输出件为电磁触控笔802，电磁触控笔802首端设有交变电磁信号源117。
优选地，设置在水平编码阵列1010中的磁信号感应线圈101与垂直编码阵列1011中的磁信号感应线圈101相互交叉排列组合设置。
优选地，排列组合设置为：同一磁信号感应线圈单元(图3)上任意位置的磁信号感应线圈101与相邻前或相邻后其它与之串联的磁信号感应线圈101的两两排列组合不与其它位置上的两两排列组合重复。
并同时遵循同一串联磁信号感应线圈单元(图3)上的磁感应线圈101在任意位置不连续出现参与两两排列组合。
优选地，在水平编码阵列1010中和垂直编码阵列1011中任意相邻的两个磁感应线圈101的两两排列组合在同一阵列里是唯一的；水平编码阵列1010和 垂直编码阵列1011相邻磁感应线圈101的两两排列组合可以一样。
所述磁感应线圈的材质为合金材料，该合金材料由以下质量配比的合金制成：(FexCo1-x)a(Ni1-y-zAlyCez)bCucBdSieCrf，其中a＝30-60，b＝30-55，c＝1-5，d＝1-8，e＝1-5，f＝1-5，x＝0.1-0.8，y＝0.1-0.5，z＝0.01-0.08；该合金的制备方法包括以下步骤：
步骤一，纳米合金粉体的制备：采用铁粉、镍粉、铬粉和铜粉作为基础粉体；所采用的铁粉的颗粒度60～100μm，纯度≥99％；镍粉的颗粒度为3～6μm，纯度>99％；铬粉的颗粒度80～120μm，纯度≥99.9％；铜粉的颗粒度为50～130μm，纯度≥99.9％；
所述铁粉、镍粉、铬粉和铜粉的质量比为20-40:15-30:1-6:1-5，配置成混合粉末，加入无水乙醇搅拌均匀，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨时间为100-190h，获得颗粒尺寸为1-10nm的Fe-Ni-Cu-Cr纳米合金粉末，所述基础粉体与无水乙醇的质量比为1-2:0.5-3；
步骤二，合金粉体基体的制备
按照合金的质量配比将步骤一所得到的纳米合金粉体进行干燥后加入粉体Si、Al、Co、Ce和B，将上述原料放入真空感应炉中，在1000-1500℃下进行熔炼，反复熔炼2-4次，每次熔炼30-120min，熔炼完毕后，在氦气的保护下进行铸坯，冷却后得到合金铸锭，将冷却后的合金铸锭，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨的时间为50-200h，球磨得到粒度为小于15nm的合金粉体基体；所述Si，Al，Co，Ce和B的纯度达到99.8％以上，Si粒径为粒径为10-100μm，Al的粒径为10-80μm，Co的粒径为10-120μm，Ce的粒径为10-90μm，B的粒径为10-110μm；
步骤三，烧结
将步骤二所制得的合金粉体基体在氩气气氛烧结炉中烧结成型，在烧结过 程，首先以10-15℃/min的升温速率在400-500℃预烧1-3h，然后以30-40℃/min的升温速率在1250-1350℃烧结5-8h得到基础合金；
步骤四，淬火
将步骤三烧结的基础合金置于淬火炉内进行淬火处理，首先在淬火温度为1100-1200℃保温时间15-25min，之后在5-10min内降温至50-80℃保温时间30-40min；
步骤五，退火处理
将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热到450-455℃，保温1-2h，再次加热到525-535℃，保温2-3h，然后加热到720℃，保温3-4h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金；
步骤六，加工
将步骤五所制得的合金进行切割加工制得所需形状的线圈。
该实施例的优选合金的配比为：
(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3；
更加优选该合金的结构为：该合金形成了α-Fe相、掺杂Co的α-Fe相和非晶相组成，其中α-Fe相和掺杂Co的α-Fe相组成第一相，第一相中α-Fe相和掺杂Co的α-Fe相的颗粒尺寸在1-15nm之间，第一相与非晶相之间形成了一个界面相，其中第一相的饱和磁化强度约为1.52T，相界面为一个厚度为1-1.5nm的界面，其中Ni在第一相中的含量为在非晶相中的含量的1.5倍。
步骤一中，优选的球磨时间为152h。
步骤五中更加优选，将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热至455℃，保温1.5h，之后再次加热至530℃，保温2.5h，然后 加热到720℃，保温3.5h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金。
【性能测试】
(一)步骤一所制得的纳米合金粉体
采用日本Riken Denshi公司Mode IBHV-525型振动样品磁强计(VSM)测量样品的磁性能。
1、通过研究球磨后的XRD谱线发现，在球磨至一段时间后Ni、Cr和Cu的衍射峰将出现基本消失的情形，这是由于随着球磨时间的增加，Fe形成过饱和固溶体，晶体的完整性受到破坏，使得参与衍射的晶粒减少而导致峰高逐渐降低，Ni、Cr和Cu的衍射峰降低直至基本消失，说明Ni、Cr和Cu固溶于Fe中，形成Fe的过饱和固溶体，研究还发现这种情形的出现，对于Cr含量和球磨时间是成反比的；但是球磨后期的颗粒硬化，内应力增大，当达到弹性极限时，颗粒开始碎化，在粉末不断细化的同时，伴随着粉末团聚现象的产生，这是由于球磨过程中，形成了很多纳米级粉末，而尺寸达到纳米级的粉末的表面能和吸附能增加，从而造成团聚现象，因此该在该配比下最佳的球磨时间为152h；
2、如表1所述随着Cr含量的上升Fe-Ni-Cu-Cr的合金的饱和磁化强度先上升后下降，在Cr含量为3-6％时达到最大值，5％时达到最大值172(σs/A·m2·kg-1)；这是因为，当Cr含量增加，会导致合金中长程有序铁磁性相增加，但是Cr元素不具有磁矩，所以比饱和磁化强度随着Cr含量的增加先上升后下降的情形；随着Cr含量的上升该合金的磁导率变化量实现先上升后下降的趋势，得到含量为5％时为饱和磁化强度与磁导率最优的配比。
表1纳米合金粉体的性能测试
Cr含量 饱和磁化强度(σs/A·m2·kg-1) 磁导率增长量
0％ 124 0％
1％ 147 1％
3％ 151 2％
5％ 172 3％
7％ 150 1.5％
9％ 131 -1％
(二)
(1)制备过程中加入了铈，使得合金中含有Ce元素对Ni进行了掺杂，研究发现由于合金中同时含有Cr、Ni等大原子，当大原子与小原子组合形成合金时候,则能够生成一种金属间化合物Laves相,它的不同尺寸原子以最致密的方式堆垛在晶胞中,其硬度较高,有显著的强化作用，随着Ce元素的增加，合金中硬质相增加，促使合金中的固溶体组织均匀细化，导致合金在外力的作用下不易折断和剥落，研究发现含有Ce的合金经过摩擦后合金表面显得光滑平整,说明摩擦基体对硬质相的支持保护作用加大,硬相不易剥离和脱落,因而提高了抗磨损的能力,磨损量减少，耐磨性比未加Ce的合金提高20％～30％以上，并且增加Ce的含量引起合金体中的奥氏体含量降低，能够有效改善合金表面的微观结构，从而提高合金的耐腐蚀性能；但是还发现随着Ce含量的增加至一定程度后，合金中的耐摩擦性能和耐腐蚀性能增强，但是磁导率呈现下降的趋势，这是由于Ce增加到一定程度后对于合金的晶粒大小的细化作用减小达到瓶颈，因此随着Ce含量的增加对于耐摩擦性能增长变缓，如表2所述当Ce含量为1.75％时候为最佳配比，其中合金的配比为(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3。
磨损试验：在RRT2III型往复式摩擦磨损机上进行,磨损试验试样的对偶件为70mm×1317mm×10mm白刚玉砂条,粒度为200目,试样表面粗糙度在018～014μm之间。测试速度150r/s,测试压力28MPa,测试时间10min,每个试样测试次数1600-1800次,测试行程75m,室温20-25℃,湿度23-26％,无润滑 干摩擦试验,磨损量用万用电子分析天平测试。未添加Ce的合金磨损量为0.019/mg；
腐蚀试验：腐蚀介质选取H2SO4(5％)、HCl(5％)和NaOH(5％),试样均在微沸状态下腐蚀24h,采用失重法进行腐蚀试验,试样先要打磨抛光,在腐蚀前后用丙酮浸泡、酒精清洗、吹风机吹干后用万分之一天平称腐蚀前后的重量，腐蚀率。
表2合金性能测试
Figure PCTCN2017093076-appb-000001
(三)
步骤三中经过二次加热处理进行烧结，首先进行预热之后升温进行正式烧结。经过研究发现二次加热处理后的初始磁导率要比一次预热处理后的初始磁导率要好，其磁导率要高于单次加热的合金5-10％，,随温度的升高,合金发生结构驰豫,向稳定的低内能状态转变。并且二次加热工艺的加热速率也需要远远高于第一次预热工艺的加热速率：“首先以10-15℃/min的升温速率在400-500℃预烧1-3h，然后以30-40℃/min的升温速率在1250-1350℃烧结5-8h”优选“首先以12℃/min的升温速率在400-500℃预烧2h，然后以35℃/min的升温速率在1250-1350℃烧结7h”，第二次加热速率几乎三倍于第一次的加热速率，通过研究发现由于之前的预热已经使得合金体具有一定的适应能力，通过快速升温， 使得材料的合金迅速且结晶更加充分,晶粒间的耦合作用更强,从而材料的有效各向异性常数更低,初始磁导率更高。经过实验得知，采用二次加热处理进行烧结后的合金初始磁导率要高于单次加热处理进行烧结后的合金初始磁导率3-7％，采用第二次加热速率三倍于第一次的加热速率后得到的合金的初始磁导率相较于普通二次加热处理进行烧结后的合金初始磁导率提高4-8％；
(四)本发明中的淬火步骤中的第二阶段采用了快速的淬火步骤，通过研究发现，采用了快速的淬火步骤能够使得合金的性能更加优质，能提高合金的冲击韧性值及硬度值，且对于磁性能并无影响，该合金在急冷过程中，其材料的内部结构发生相变增韧，Ce元素能够部分熔解，使得在粘结相中的Ce在急冷情况下来不及析出，起到了固熔强化的作用，能大幅度提高了该合金的冲击韧性及硬度值。冲击韧性能够达到0.72-0.89MJ/m2，其中经过综合考虑当合金材料的配比为：其中合金的配比为(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3，时Ce含量约为1.75％时的冲击韧性以及各项性能达到最佳，冲击韧性为0.85MJ/m2，洛氏硬度值为38HRC。
(五)经过退火步骤后该合金形成了α-Fe相、掺杂Co的α-Fe相和非晶相组成，其中α-Fe相和掺杂Co的α-Fe相组成第一相，第一相中α-Fe相和掺杂Co的α-Fe相的颗粒尺寸在1-15nm之间，第一相与非晶相之间形成了一个界面相，其中第一相的饱和磁化强度约为1.52T，相界面为一个厚度为1-1.5nm的界面，其中Ni在第一相中的含量为在非晶相中的含量的1.5倍；
本发明创造性的首先制备纳米合金粉体，之后加入金属进行熔炼，这样使得Ni能够进入至由α-Fe相和掺杂Co的α-Fe相组成的第一相中，经过研究发现当Ni在第一相中的含量为在非晶相中的含量的1.5倍时该合金的饱和磁化强度最大，其合金的饱和磁化强度约为1.57T。
(1)步骤五中的退火温度对于合金的晶粒直径有一定影响。在合金加热过程中,由于存在不同的金属元素，经过研究发现首先加热至455℃，保温1.5h，先使得第一相中的元素优先成核，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h，使得非晶相此时能够得到均匀细小纳米结构。如果再次升温后发现当温度升高到750℃时,晶粒尺寸急剧长大,其使磁各向异性增加,同时大晶粒对畴壁的位移、磁矩转动起阻碍作用。因此本发明采用最佳的退火温度为“首先加热至455℃，保温1.5h，先使得第一相中的元素优先成核，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h”。
(2)研究发现在进行退火的过程中需要进行保温程序，但是保温的时间与本发明合金的磁性能具有很大的关系，随着保温时间的延长,磁性能下降。由于在合金的内部存在很大的内应力,且不同部位固化推进方式不同而形成区域应力场,在720℃保温3-4h后(最佳保温时间为3.5h),合金的内应力可以达到充分的释放,磁晶各相异性能降低,合金内部的亚稳定结构趋于稳定,而使合金表现出优良的软磁性能。但在720℃保温超过4h后，由于出现了恶化磁性能的析出相，导致合金磁性能下降。
实施例2
参照图1、图2、图4和图8～图11，与实施例的不同之处在于，差分线102设置在磁信号定位有效区118外，磁感应线圈2为透明或者不透明导电材质，材质和实施例1中的材质相同，水平编码阵列1010与水平编码阵列1011的磁感应线圈101设置在不同的装置内。
显示组件801设置在远离使用者一端，磁信号感应组件的感应元件100的书写背面，两者中间件为任意透明构件，有利于磁信号感应组件的感应元件100设置在显示组件801的正前面。
工作原理如下：
参照图7和图10，电磁触控笔上的交变磁信号源117，靠近磁信号感应组 件中的水平编码阵列1010，水平编码阵列1010中靠近交变磁信号源117的几个相邻磁感应线圈101，例如：x1、x5、x7与交变磁信号源117互感产生磁互感信号。
产生此磁互感信号的几个相邻水平磁感应线圈101，如x1、x5、x7的组合编码为x5x1、x5x7、x7x5、x1x5x7或x7x5x1，该组合编码为当前交变磁信号源117在水平编码阵列1010核磁信号定位有效区118中的水平坐标编码，产生磁互感信号越强的磁感应线圈101判定越靠近交变磁信号源117。
同理，交变磁信号源117靠近垂直编码阵列1011，垂直垂直编码阵列1011中靠近交变磁信号源117的几个相邻的磁感应线圈单元(图3)，例如y6、y2、y4与交变磁信号源117互感产生磁互感信号。
产生此磁互感信号的几个相邻的磁感应线圈101如y6、y2、y4的组合编码为y6y2，y2y6，y2y4，y4y2，y6y2y4或y4y2y6，该组合编码为当前交变磁信号源117在垂直编码阵列1011和磁信号定位有效区118中的垂直坐标编码，产生磁互感信号越强的磁感应线圈101判定越靠近交变磁信号源117。
靠近交变磁信号源117的几个相邻磁感应线圈101的x1、x5、x7或y6、y2、y4的组合编码x1x5，x5x1，x5x7，x7x5，x1x5x7或x7x5x1和y6y2，y2y6，y2y4，y4y2，y6y2y4或y4y2y6，代表交变磁信号源117在感应元件100的检测磁信号定位有效区118水平方向和垂直方向的大致绝对坐标位置。
交变磁信号源117判定在大致绝对坐标位置处磁互感信号最强那个磁感应线圈101，如x1x5x7的x5和y6y2y4的y2位置，再根据最强磁感应线圈两侧的磁感应线圈的感应磁互感信号强度的比值判定交变磁信号源117在最强磁感应线圈x1x5x7的x5和y6y2y4的y2通道所在区域内相对两侧磁感应线圈101的精细相对位置。
最强磁感应线圈x5和y2两侧的磁感应线圈x1，x7和y6，y4磁互感信号强度的比值为1:1代表交变磁信号源117在最强磁感应线圈x5和y2通道的中心位置，大于1:1则判定交变磁信号源117在最强磁感应线圈x5和y2通道所在区域内并偏向一侧的次强磁感应线圈，偏移的距离跟这个比值成正比，小于1:1则判定交变磁信号源117在最强磁感应线圈x5和y2通道所在区域内并偏向另一 侧的次强磁感应线圈单元，偏移的距离跟这个比值成反比。
精准的定位信息从磁信号感应组件通过主板传递到显示组件上进行显示，可以对使用者通过电磁触控笔所表达出来的位置信息进行精准的表达。
所述磁感应线圈的材质为合金材料，该合金材料由以下质量配比的合金制成：(FexCo1-x)a(Ni1-y-zAlyCez)bCucBdSieCrf，其中a＝30-60，b＝30-55，c＝1-5，d＝1-8，e＝1-5，f＝1-5，x＝0.1-0.8，y＝0.1-0.5，z＝0.01-0.08；该合金的制备方法包括以下步骤：
步骤一，纳米合金粉体的制备：采用铁粉、镍粉、铬粉和铜粉作为基础粉体；所采用的铁粉的颗粒度60～100μm，纯度≥99％；镍粉的颗粒度为3～6μm，纯度>99％；铬粉的颗粒度80～120μm，纯度≥99.9％；铜粉的颗粒度为50～130μm，纯度≥99.9％；
所述铁粉、镍粉、铬粉和铜粉的质量比为20-40:15-30:1-6:1-5，配置成混合粉末，加入无水乙醇搅拌均匀，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨时间为100-190h，获得颗粒尺寸为1-10nm的Fe-Ni-Cu-Cr纳米合金粉末，所述基础粉体与无水乙醇的质量比为1-2:0.5-3；
步骤二，合金粉体基体的制备
按照合金的质量配比将步骤一所得到的纳米合金粉体进行干燥后加入粉体Si、Al、Co、Ce和B，将上述原料放入真空感应炉中，在1000-1500℃下进行熔炼，反复熔炼2-4次，每次熔炼30-120min，熔炼完毕后，在氦气的保护下进行铸坯，冷却后得到合金铸锭，将冷却后的合金铸锭，放入密封罐后，在行星式球磨机上于常温下进行星式球磨，球磨的时间为50-200h，球磨得到粒度为小于15nm的合金粉体基体；所述Si，Al，Co，Ce和B的纯度达到99.8％以上，Si粒径为粒径为10-100μm，Al的粒径为10-80μm，Co的粒径为10-120μm，Ce的粒径为10-90μm，B的粒径为10-110μm；
步骤三，烧结
将步骤二所制得的合金粉体基体在氩气气氛烧结炉中烧结成型，在烧结过程，首先以10-15℃/min的升温速率在400-500℃预烧1-3h，然后以30-40℃/min的升温速率在1250-1350℃烧结5-8h得到基础合金；
步骤四，淬火
将步骤三烧结的基础合金置于淬火炉内进行淬火处理，首先在淬火温度为1100-1200℃保温时间15-25min，之后在5-10min内降温至50-80℃保温时间30-40min；
步骤五，退火处理
将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热到450-455℃，保温1-2h，再次加热到525-535℃，保温2-3h，然后加热到720℃，保温3-4h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金；
步骤六，加工
将步骤五所制得的合金进行切割加工制得所需形状的线圈。
该实施例的优选合金的配比为：
(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3；
更加优选该合金的结构为：该合金形成了α-Fe相、掺杂Co的α-Fe相和非晶相组成，其中α-Fe相和掺杂Co的α-Fe相组成第一相，第一相中α-Fe相和掺杂Co的α-Fe相的颗粒尺寸在1-15nm之间，第一相与非晶相之间形成了一个界面相，其中第一相的饱和磁化强度约为1.52T，相界面为一个厚度为1-1.5nm的界面，其中Ni在第一相中的含量为在非晶相中的含量的1.5倍。
步骤一中，优选的球磨时间为152h。
步骤五中更加优选，将步骤四淬火得到的基础合金置于氩气气氛的退火炉中，首先加热至455℃，保温1.5h，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h，停止加热，在30-40min内将温度降至150-170℃，然后自然冷却至室温得到合金。
【性能测试】
(一)步骤一所制得的纳米合金粉体
采用日本Riken Denshi公司Mode IBHV-525型振动样品磁强计(VSM)测量样品的磁性能。
1、通过研究球磨后的XRD谱线发现，在球磨至一段时间后Ni、Cr和Cu的衍射峰将出现基本消失的情形，这是由于随着球磨时间的增加，Fe形成过饱和固溶体，晶体的完整性受到破坏，使得参与衍射的晶粒减少而导致峰高逐渐降低，Ni、Cr和Cu的衍射峰降低直至基本消失，说明Ni、Cr和Cu固溶于Fe中，形成Fe的过饱和固溶体，研究还发现这种情形的出现，对于Cr含量和球磨时间是成反比的；但是球磨后期的颗粒硬化，内应力增大，当达到弹性极限时，颗粒开始碎化，在粉末不断细化的同时，伴随着粉末团聚现象的产生，这是由于球磨过程中，形成了很多纳米级粉末，而尺寸达到纳米级的粉末的表面能和吸附能增加，从而造成团聚现象，因此该在该配比下最佳的球磨时间为152h；
2、如表1所述随着Cr含量的上升Fe-Ni-Cu-Cr的合金的饱和磁化强度先上升后下降，在Cr含量为3-6％时达到最大值，5％时达到最大值172(σs/A·m2·kg-1)；这是因为，当Cr含量增加，会导致合金中长程有序铁磁性相增加，但是Cr元素不具有磁矩，所以比饱和磁化强度随着Cr含量的增加先上升后下降的情形；随着Cr含量的上升该合金的磁导率变化量实现先上升后下降 的趋势，得到含量为5％时为饱和磁化强度与磁导率最优的配比。
表1纳米合金粉体的性能测试
Cr含量 饱和磁化强度(σs/A·m2·kg-1) 磁导率增长量
0％ 124 0％
1％ 147 1％
3％ 151 2％
5％ 172 3％
7％ 150 1.5％
9％ 131 -1％
(二)
(1)制备过程中加入了铈，使得合金中含有Ce元素对Ni进行了掺杂，研究发现由于合金中同时含有Cr、Ni等大原子，当大原子与小原子组合形成合金时候,则能够生成一种金属间化合物Laves相,它的不同尺寸原子以最致密的方式堆垛在晶胞中,其硬度较高,有显著的强化作用，随着Ce元素的增加，合金中硬质相增加，促使合金中的固溶体组织均匀细化，导致合金在外力的作用下不易折断和剥落，研究发现含有Ce的合金经过摩擦后合金表面显得光滑平整,说明摩擦基体对硬质相的支持保护作用加大,硬相不易剥离和脱落,因而提高了抗磨损的能力,磨损量减少，耐磨性比未加Ce的合金提高20％～30％以上，并且增加Ce的含量引起合金体中的奥氏体含量降低，能够有效改善合金表面的微观结构，从而提高合金的耐腐蚀性能；但是还发现随着Ce含量的增加至一定程度后，合金中的耐摩擦性能和耐腐蚀性能增强，但是磁导率呈现下降的趋势，这是由于Ce增加到一定程度后对于合金的晶粒大小的细化作用减小达到瓶颈，因此随着Ce含量的增加对于耐摩擦性能增长变缓，如表2所述当Ce含量为1.75％时候为最佳配比，其中合金的配比为(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3。
磨损试验：在RRT2III型往复式摩擦磨损机上进行,磨损试验试样的对偶件为70mm×1317mm×10mm白刚玉砂条,粒度为200目,试样表面粗糙度在018～ 014μm之间。测试速度150r/s,测试压力28MPa,测试时间10min,每个试样测试次数1600-1800次,测试行程75m,室温20-25℃,湿度23-26％,无润滑干摩擦试验,磨损量用万用电子分析天平测试。未添加Ce的合金磨损量为0.019/mg；
腐蚀试验：腐蚀介质选取H2SO4(5％)、HCl(5％)和NaOH(5％),试样均在微沸状态下腐蚀24h,采用失重法进行腐蚀试验,试样先要打磨抛光,在腐蚀前后用丙酮浸泡、酒精清洗、吹风机吹干后用万分之一天平称腐蚀前后的重量，腐蚀率。
表2合金性能测试
Figure PCTCN2017093076-appb-000002
(三)
步骤三中经过二次加热处理进行烧结，首先进行预热之后升温进行正式烧结。经过研究发现二次加热处理后的初始磁导率要比一次预热处理后的初始磁导率要好，其磁导率要高于单次加热的合金5-10％，,随温度的升高,合金发生结构驰豫,向稳定的低内能状态转变。并且二次加热工艺的加热速率也需要远远高于第一次预热工艺的加热速率：“首先以10-15℃/min的升温速率在400-500℃预烧1-3h，然后以30-40℃/min的升温速率在1250-1350℃烧结5-8h”优选“首先以12℃/min的升温速率在400-500℃预烧2h，然后以35℃/min的升温速率 在1250-1350℃烧结7h”，第二次加热速率几乎三倍于第一次的加热速率，通过研究发现由于之前的预热已经使得合金体具有一定的适应能力，通过快速升温，使得材料的合金迅速且结晶更加充分,晶粒间的耦合作用更强,从而材料的有效各向异性常数更低,初始磁导率更高。经过实验得知，采用二次加热处理进行烧结后的合金初始磁导率要高于单次加热处理进行烧结后的合金初始磁导率3-7％，采用第二次加热速率三倍于第一次的加热速率后得到的合金的初始磁导率相较于普通二次加热处理进行烧结后的合金初始磁导率提高4-8％；
(四)本发明中的淬火步骤中的第二阶段采用了快速的淬火步骤，通过研究发现，采用了快速的淬火步骤能够使得合金的性能更加优质，能提高合金的冲击韧性值及硬度值，且对于磁性能并无影响，该合金在急冷过程中，其材料的内部结构发生相变增韧，Ce元素能够部分熔解，使得在粘结相中的Ce在急冷情况下来不及析出，起到了固熔强化的作用，能大幅度提高了该合金的冲击韧性及硬度值。冲击韧性能够达到0.72-0.89MJ/m2，其中经过综合考虑当合金材料的配比为：其中合金的配比为(Fe0.6Co0.4)50(Ni0.65Al0.3Ce0.05)35Cu3B6Si3Cr3，时Ce含量约为1.75％时的冲击韧性以及各项性能达到最佳，冲击韧性为0.85MJ/m2，洛氏硬度值为38HRC。
(五)经过退火步骤后该合金形成了α-Fe相、掺杂Co的α-Fe相和非晶相组成，其中α-Fe相和掺杂Co的α-Fe相组成第一相，第一相中α-Fe相和掺杂Co的α-Fe相的颗粒尺寸在1-15nm之间，第一相与非晶相之间形成了一个界面相，其中第一相的饱和磁化强度约为1.52T，相界面为一个厚度为1-1.5nm的界面，其中Ni在第一相中的含量为在非晶相中的含量的1.5倍；
本发明创造性的首先制备纳米合金粉体，之后加入金属进行熔炼，这样使得Ni能够进入至由α-Fe相和掺杂Co的α-Fe相组成的第一相中，经过研究发 现当Ni在第一相中的含量为在非晶相中的含量的1.5倍时该合金的饱和磁化强度最大，其合金的饱和磁化强度约为1.57T。
(1)步骤五中的退火温度对于合金的晶粒直径有一定影响。在合金加热过程中,由于存在不同的金属元素，经过研究发现首先加热至455℃，保温1.5h，先使得第一相中的元素优先成核，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h，使得非晶相此时能够得到均匀细小纳米结构。如果再次升温后发现当温度升高到750℃时,晶粒尺寸急剧长大,其使磁各向异性增加,同时大晶粒对畴壁的位移、磁矩转动起阻碍作用。因此本发明采用最佳的退火温度为“首先加热至455℃，保温1.5h，先使得第一相中的元素优先成核，之后再次加热至530℃，保温2.5h，然后加热到720℃，保温3.5h”。
(2)研究发现在进行退火的过程中需要进行保温程序，但是保温的时间与本发明合金的磁性能具有很大的关系，随着保温时间的延长,磁性能下降。由于在合金的内部存在很大的内应力,且不同部位固化推进方式不同而形成区域应力场,在720℃保温3-4h后(最佳保温时间为3.5h),合金的内应力可以达到充分的释放,磁晶各相异性能降低,合金内部的亚稳定结构趋于稳定,而使合金表现出优良的软磁性能。但在720℃保温超过4h后，由于出现了恶化磁性能的析出相，导致合金磁性能下降。
以上所述仅为本发明的优选实施例，并非因此限制本发明的专利范围，凡是在本发明的发明构思下，利用本发明说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本发明的专利保护范围内。

Claims (10)

  1. 一种手写输入装置，包括显示组件，设置在所述显示组件前面或者后面距离显示组件100毫米范围内任意位置的磁信号感应组件，与所述磁信号感应组件对应设置的磁信号输出件，上述所有部件均设置在外壳中，所述外壳内还设有主板；
    其特征在于，所述磁信号感应组件包括感应元件和连接所述感应元件的检测控制电路，所述感应元件包括：水平编码阵列、与所述水平编码阵列垂直设置的垂直编码阵列，所述水平编码阵列与所述垂直编码阵列均由磁信号感应线圈单元组成。
  2. 根据权利要求1所述的手写输入装置，其特征在于，所述水平编码阵列由一个以上的磁信号感应线圈单元组成；所述垂直编码阵列由一个以上的磁信号感应线圈单元组成；所述磁信号感应线圈单元由至少两个磁感应线圈通过差分线串联而成；磁感应线圈由1圈到10圈的连续环形导线构成。
  3. 根据权利要求1或2所述的手写输入装置，其特征在于，所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区内。
  4. 根据权利要求1或2所述的手写输入装置，其特征在于，所述磁信号感应线圈单元中串联磁感应线圈的差分线在磁感应定位有效区外。
  5. 根据权利要求1所述的手写输入装置，其特征在于，所述检测控制电路包括多选一阵列开关、前级信号放大器、可控增益放大器、带通放大器、交直流变换器、积分电路、直流放大器、充放电开关和处理器；
    其中，所述多选一阵列开关一侧分别与所述水平磁感应线圈和所述垂直磁感应线圈连接，所述多选一阵列开关另一侧与所述前级放大器连接，所述前级放大器与所述可控增益放大器连接；
    所述可控增益放大器一端通向所述处理器，所述可控增益放大器另一端通向所述带通放大器，所述带通放大器通过所述交直流变换器与所述积分电路连接；
    所述积分电路一端通过直流放大器通向所述处理器，所述积分电路另一端通向所述充放电开关，所述处理器分别通向所述多选一阵列开关和所述充放电开关。
  6. 根据权利要求1所述的手写输入装置，其特征在于，所述显示组件与所述磁信号感应组件之间还设有中间件。
  7. 根据权利要求1所述的手写输入装置，其特征在于，所述磁信号输出件为电磁触控笔，所述电磁触控笔首端为交变电磁信号源。
  8. 根据权利要求1所述的阵列编码磁信号定位感应装置，其特征在于，设置在所述水平编码阵列中的磁信号感应线圈与所述垂直编码阵列中的磁信号感应线圈相互交叉排列组合设置。
  9. 根据权利要求5所述的一种手写输入装置，其特征在于，排列组合设置为：水平编码阵列和垂直编码阵列中任意磁信号感应线圈单元上任意磁信号感应圈与相邻前或相邻后其它的磁信号感应线圈单元上的磁感应线圈的两两排列组合不与其它位置上的两两排列组合重复；
    并同时遵循同一所述磁信号感应线圈单元上的磁感应线圈在任意位置不连续出现参与两两排列组合。
  10. 根据权利要求2所述的手写输入装置，其特征在于，所述水平编码阵列和垂直编码阵列中任意位置相邻的两个磁感应线圈的两两排列组合是唯一的。
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Families Citing this family (3)

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CN109032440A (zh) * 2018-09-06 2018-12-18 广东宗华触控科技有限公司 一种手写电磁装置
CN109271044A (zh) * 2018-09-06 2019-01-25 广东宗华触控科技有限公司 一种智能笔记识别方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101673149A (zh) * 2008-09-10 2010-03-17 太瀚科技股份有限公司 电磁手写输入装置及方法
CN201503583U (zh) * 2009-06-17 2010-06-09 深圳市鸿合创新信息技术有限责任公司 一种电磁感应式电子白板
CN102033681A (zh) * 2010-12-31 2011-04-27 太原理工大学 一种直接编码型电磁感应网
CN106933437A (zh) * 2017-02-13 2017-07-07 深圳市华鼎星科技有限公司 一种手写输入装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186924A (ja) * 1984-03-06 1985-09-24 Wacom Co Ltd デイスプレイ付座標入力装置
JPH01194019A (ja) * 1988-01-29 1989-08-04 Wacom Co Ltd 位置検出装置
JP2842717B2 (ja) * 1991-11-08 1999-01-06 株式会社ワコム 座標入力装置のセンス部
DE69822828T2 (de) * 1997-06-17 2004-08-12 Synaptics (Uk) Ltd., Harston Feststellung von relativer Position und Orientierung
US6396005B2 (en) * 1998-06-15 2002-05-28 Rodgers Technology Center, Inc. Method and apparatus for diminishing grid complexity in a tablet
JP4397681B2 (ja) * 2003-12-03 2010-01-13 株式会社ワコム 位置指示器及び位置検出装置
CN101556297B (zh) * 2008-04-08 2011-05-18 瑞鼎科技股份有限公司 电容值量测电路及其方法
JP5888733B2 (ja) * 2012-03-09 2016-03-22 株式会社ワコム 電磁誘導方式の座標入力装置のセンサ
CN203606822U (zh) 2013-11-25 2014-05-21 泰凌微电子（上海）有限公司 电磁天线的单层布线系统
CN104090680B (zh) * 2014-07-23 2017-07-25 上海天马微电子有限公司 一种触控面板及其驱动方法和电子设备
CN206557748U (zh) * 2017-02-13 2017-10-13 深圳市华鼎星科技有限公司 一种手写输入装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101673149A (zh) * 2008-09-10 2010-03-17 太瀚科技股份有限公司 电磁手写输入装置及方法
CN201503583U (zh) * 2009-06-17 2010-06-09 深圳市鸿合创新信息技术有限责任公司 一种电磁感应式电子白板
CN102033681A (zh) * 2010-12-31 2011-04-27 太原理工大学 一种直接编码型电磁感应网
CN106933437A (zh) * 2017-02-13 2017-07-07 深圳市华鼎星科技有限公司 一种手写输入装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3385826A4 *

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