WO2018125169A1

WO2018125169A1 - Device, system and method to provide high aspect ratio oligomer structures

Info

Publication number: WO2018125169A1
Application number: PCT/US2016/069329
Authority: WO
Inventors: James M. Blackwell; Marie KRYSAK; Tayseer MAHDI
Original assignee: Intel Corporation
Priority date: 2016-12-29
Filing date: 2016-12-29
Publication date: 2018-07-05

Abstract

Techniques and mechanisms to provide in or on a semiconductor substrate one or more dielectric structures including an oligomer material. In an embodiment, a reaction is performed with a precursor and a co-reactant, wherein molecules of the precursor each include a coordination complex comprising a coordination center which has one or more transition metal atoms. The reaction results in precursor molecules variously dissolving partially and reforming into dimers, trimers and/or other oligomer molecules. In another embodiment, precursor molecules each include various ligands having different respective types of reactivity with the co-reactant. The reaction may enable efficient formation of high aspect ratio dielectric structures.

Description

1. Technical Field [0001] The present invention relates generally to the field of semiconductor processing and more particularly, but not exclusively, to the formation of high aspect ratio structures of an integrated circuit device.

2. Background Art

[0002] The fabrication of microelectronic devices involves forming electronic components and insulation structures in or on microelectronic substrates, such as silicon wafers. Electronic components may include transistors, resistors, capacitors, and the like. Insulation structures comprise dielectric materials which are often variously disposed in or near electronic

components to control or otherwise mitigate the effect of electromagnetic (EM) fields on the operation of such components. [0003] Successive generations of microelectronic device technology continue to trend toward increased integration of structures in or on any one layer, as well as trending toward increased stacking of such layers. One result of this trend is a tendency of some structures to have increased aspect ratios (i.e., the ratio of depth to width), where improved integration can give a particular structure a smaller cross-sectional area in a plane of a substrate layer, but where an extent of the structure into the substrate layer remains relatively unchanged. High aspect ratio structures pose fabrication challenges at least insofar as they are susceptible to the formation of voids therein or thereon. As a result, there is an increasing premium being placed on incremental improvements to techniques for fabricating high aspect ratio structures in semiconductor devices.

BRIEF DESCRIPTION OF THE DRAWINGS [0004] The various embodiments of the present invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:

[0005] FIG. 1 shows in respective cross-sectional side views various stages of processing to fabricate a dielectric structure according to an embodiment. [0006] FIG. 2 is a flow diagram illustrating elements of a method to form a dielectric structure including an oligomer substance according to an embodiment.

[0007] FIG. 3 is a structural formula diagram illustrating elements of a reaction to produce an oiigomeric structure in or on a semiconductor substrate according to an embodiment. [0008] FIG. 4 is a structural formula diagram illustrating elements of a reaction to produce an oiigomeric structure in or on a semiconductor substrate according to an embodiment.

[0009] FIG. 5 is a functional block diagram illustrating elements of a computer device according to an embodiment.

[0010] FIG. 6 is a functional block diagram illustrating elements of a computer system according to an embodiment.

DETAILED DESCRIPTION

[0011] Embodiments described herein variously include techniques or mechanisms to provide dielectric structures in or on a semiconductor substrate of a microelectronic device. In an embodiment, a reaction with a precursor substance is performed to produce an oiigomeric material, the dielectric and/or other properties of which may be controlled based on the conditions such reaction. Molecules of the precursor substance may each include a coordination complex comprising a coordination center which has one or more transition metal atoms.

Ligands of such a coordination complex may be prone to reaction with a corresponding co- reactant - e.g., where such reaction results in residue of precursor molecules variously reforming into dimers, trimers and/or other oligomer molecules. Such oligomer molecules may variously comprise respective "units" (groups of similarly bonded atoms) which are arranged along a chain. In such an embodiment, the units of an oligomer molecule may each including an atom of the transition metal.

[0012] FIG 1 shows in respective cross-section view various stages 100-104 of processing to fabricate dielectric structures of a microelectronic device according to an embodiment. Stages 100-104 illustrate one example of an embodiment which, for example, facilitates the formation of high aspect ratio features in or on a semiconductor substrate.

[0013] To illustrate certain features of various embodiments, stages 100-104 are described herein with reference to the formation of a dielectric structure which extends at least partially through a silicon substrate 110 - e.g., the dielectric structure including an oiigomeric material formed by any of a variety of reactions described herein. However, such description may be extended to additionally or alternatively apply to the formation of any of a variety of other dielectric structures including such an oligomeric material, A dielectric structure formed according to a different embodiment may, for example, extend at least partially through a layer which is disposed, directly or indirectly, on or under such a silicon substrate.

[0014] Referring now to stage 100, a partially processed wafer is shown which includes a silicon substrate 1 10, and a patterned masking layer 120 disposed thereon - e.g., where patterned masking layer 120 comprises a photoresist, a nitride material (e.g., silicon nitride) and/or any of various other materials adapted from conventional marking techniques. One or more openings in patterned masking layer 120 may expose corresponding underlying regions of silicon substrate 1 10. In the illustrative embodiment, shown, a recess region 130 is formed by a silicon substrate 110 - e.g., wherein recess region 130 extends at least partially (and in some embodiments, entirely) through silicon substrate 1 10. Processing during stages 100-104 may form a dielectric structure in recess region 130 - e.g., wherein the recess structure is to enable capacitance functionality, electrical insulation and/or any of a variety of other features. Some embodiments are not limited with respect to a particular function that might be provided by such a dielectric structure.

[0015] As shown at stage 100, an opening in patterned masking layer 120 may be aligned over recess region 130 to expose at least sidewall structures formed by silicon substrate 1 10, At stage 101, a reaction between a first material and a second material (represented as respective white and black dots) may take place while a mixture 140 of the first material and the second material is disposed - directly and/or indirectly - in or on silicon substrate 110. For brevity, the first material and the second material are referred to herein as a "precursor" and a "co-reactant," respectively. The co-reactant may act as a solvent on molecules of the precursor, in some embodiments.

[0016] The precursor and co-reactant may be initially brought into contact with one another during stage 101 as a result of a process - e.g., including chemical vapor deposition - which deposits one or both of the precursor and co-reactant on patterned m asking layer 120 and/or into recess region 130. Alternatively, the precursor and co-reactant may be combined with one another prior to a subsequent deposition (e.g., by spin coating) on silicon substrate 1 10. In such an embodiment, the application may spread a mixture of the precursor and co-reactant across patterned masking layer 120, and into recess region 130, before a reaction between the precursor and co-reactant has completed. Some embodiments are not limited to a particular technique whereby a precursor and a corresponding co-reactant are to be disposed on a semiconductor substrate.

[0017] In an embodiment, some or all molecules of the precursor each include a coordination complex comprising a coordination center (e.g., an atom or an ion including multiple atoms) which includes at least one transition metal atom. Such a coordination complex may further comprise a plurality of ligands variously bonded to the coordination complex. The co-reactant may facilitate reaction with some or all such ligands - e.g., to provide the partial dissolution and restnscturing of portions from different respective precursor molecules. For example, reaction with a corresponding co-reactant may result in precursor molecules variously contributing to the build up of any of a variety of dimers, trimers and/or other oligomeric molecules.

[0018] In the illustrative embodiment shown, a product 150 formed by reaction of the precursor and co-reactant may, at stage 102, extend into recess region 130 and, in some embodiments, across a portion of patterned masking layer 120. Stage 102 may include curing of the product 150 - e.g., with a curing agent such as water, oxygen etc. and/or in the presence of heat. Such curing may result in the removal of at least some residual reaction by-products and the formation of an oligomeric material, such as that of the illustrative oligomer 152 shown at stage 103, Some embodiments may further comprise processing, such as that at stage 104, to selectively remove or otherwise shape portions of the oligomer 152, resulting in the formation of one or more dielectric structures which variously extend in silicon substrate 1 10. For example, polishing, etching and/or any of a variety of other subtractive processes may remove some or all of patterned masking layer 120 and portions of oligomer 152 which are disposed on patterned masking layer 120. Such subtractive processing may contribute to the formation of a dielectric structure 154 disposed in recess region 130. Some embodiments are not limited with respect to any additional processing that might be performed to further provide electrical components and/or other dielectric structures (not shown) in or on silicon substrate 1 10.

[0019] FIG. 2 illustrates features of a method 200 to fabricate dielectric structures of an integrated circuit device according to an embodiment. Method 200 may include some or all features of the processing illustrated by stages 100-104 - e.g., where method 200 is to form one or more dielectric structures which variously extend each at least partially into silicon substrate 1 10 (and/or at least partially into a layer disposed on or under silicon substrate 110).

[0020] In some embodiments, method 200 includes initiating a reaction of a precursor and a co-reactant with one another, wherein molecules of the precursor each include a respective coordination complex comprising a coordination center including at least one transition metal atom. Such a coordination complex may further comprise a plurality of ligands which exhibit reactivity in the presence of the co-reactant. For example, ligands of a precursor may exhibit hydrolytically characteristics which are reactive to water as a co-reactant. In some embodiments, such ligands may additionally or alternatively exhibit reactivity to an ammonia co-reactant and/or any of a variety of radicals of a co-reactant.

[0021] FIG. 3 illustrates one example of a chemical process 300 which, for example, may be initiated at 210 - e.g., during stages 100-104. In the illustrative embodiment of process 300, hafnium tert-butoxide - or Hf(OtBu)₄ - is a homoleptic precursor material for which water (H₂0) is to function as a co-reactant. The Hf(OtBu)₄ precursor may be brought into contact with water prior to or during a chemical vapor deposition (CVD) or other such application process. In response, the water may start an initial reaction to break away one or two OtBu ligands of the precursor. These initial reactions may take place quickly - e.g., even at relatively low

temperatures such as between 30 degrees Celsius (° C) and 100° C. However, further substitution of third and even fourth OtBu ligands becomes energetically less favourable due, for example, to electronic and steric factors. Additional energy (and more water or other co- reactant) may be required where, in some embodiment, more OtBu ligands are to be removed to produce a lower molecular weight (MW) oligomer material. Such low MW oligomers may be relatively soft, and thus may exhibit better flow characteristics for filling recess structures during deposition and reaction processes.

[0022] As shown in FIG. 3, a dimer may be formed by an initial reaction of two Hf(OtBu)₄ molecules in water. This reactivity with water molecules may be repeated for the dimer, thus resulting in formation of a trimer and, in some embodiments, subsequently larger oligonieric molecules. The resulting product - e.g., a mixture of dimers, trimers and/or other oligomers with trace water and reaction by-products - may be subsequently cured (at 230 of method 200, for example). In the illustrative embodiment shown, such curing takes place in the presence of a curing agent (such as 0₂) and/or in the presence of heat to reduce the amount of excess water and/or reaction by-products, such as trace amounts of Hfl0₂.

[0023] FIG. 4 illustrates another example of a chemical process 400 which, for example, may be initiated at 210 - e.g., during stages 100-104. In the illustrative embodiment of process 400, tris(dimethylamino)cyclopentadienylzirconium - or CpZr NMe2)3 - is a heteroieptic precursor materi l for which water is to function as a co-reactant.

[0024] CpZr(NMe₂)₃ is an example of one precursor type - i.e., CpZrR¹? - that facilitates efficient production of dielectric structures according to various embodiments. For the precursor type CpZrR¹?., a Iigand R¹ (which, in the example of process 400 is Me₂) may react relatively quickly with a co-reactant such as water, while a cyclopentadiene Iigand Cp reacts relatively slowly. In providing ligands with different respective reactivities to the same co-reactant, such a precursor may facilitate deposition and/or other manipulation of a low average MW oligomer material, which can flow before further reacting to form a higher average MW oligomer. After reaction to increase MW of the material, some reaction by-products and/or other residual materials - e.g., including excess water, Cp iigand by-products, trace Zr0₂ and/or the like - maybe removed during a curing process (at 230 of method 200, for example) ai ded, for example, by heat and/or by a curing agent such as oxygen (0₂) or ozone (0₃). [0025] Other types of precursors (and corresponding co-reactants) may be variously used to form dielectric structures, according to different embodiments. One precursor may facilitate the formation of a metal oxide oligomer complex - e.g., the precursor including, for example, a coordination center M, at least one oxygen atom (O) and multiple instances of a Iigand R.

Unless otherwise indicated herein, a coordination center M may include at least one transition metal atom . In an embodiment, such a precursor may be represented by the formula M(OR)₄ - e.g., where M includes one of titanium (Ti), zircomium (Zr) and hafnium (Hf) and the Iigand R is one of an isopropyi group (iPr), tert-butyi group (tBu), ethyl group (Et) and a trimethylsilyi group (SiMe₃). A co-reactant with a precursor of the type M(OR)₄ - to produce a metal oxide film - may, for example, include oxygen (0₂), ozone (O3) and water (H₂0). [0026] Another such precursor to form a metal oxide complex may, for example, be represented by the formula M(OR)₅. In such an embodiment, M^ may include one of tantalum (Ta) and niobium (Nb) - e.g., wherein the Iigand R is one of an isopropyi group (iPr), tert-butyi group (tBu), ethyl group (Et) and trimethylsilyi group (SiMe₃). A co-reactant with a precursor of the type M(OR)₅ - to facilitate production of a metal oxide film - may, for example, include one of oxygen (0₂), ozone (O3) and water (H₂0).

[0027] In another embodiment, a precursor is of a type that facilitates the formation of a metal nitride complex - e.g., the precursor including, for example, a coordination center M (compri sing a transition metal atom), at least one nitrogen (N) atom and multiple instances of a Iigand R. One such precursor may be represented by the formula M(NR₂)₄ - e.g., where a coordination center M includes one of titanium (Ti), zircomium (Zr) and hafnium (Hf) and the Iigand R is one of a methyl group (Me), ethyl group (Et) and a trimethyl silyi group (SiMe ). A co-reactant with a precursor of the type M(NR₂)₄ - to facilitate production of a metal nitride film - may, for example, include one of ammonia (NH₃) and hydrazine (N2H4). [0028] In another embodiment, a precursor is of a type that facilitates the formation of a metal oxycarbide complex - e.g., the precursor including, for example, a coordination center M (comprising a transition metal atom), at least one oxygen (O) atom and multiple instances of a ligand R. In one such embodiment, the precursor may be represented by the formula Cp₂M(OR)2 - e.g., where M includes one of titanium (Ti), zircomium (Zr) and hafnium (Hf) and wherein the ligand R is one of a methyl group (Me), ethyl group (Et), isopropyl group (iPr) and a tert-butyl group (tBu). A co-reactant with a precursor of the type Cp₂M(OR)₂ - to facilitate production of a metal oxycarbide film - may, for example, include one of ammonia (NH₃) and hydrazine (N₂H₄). [0029] Another precursor may comprise a complex including, for example, a coordination center M (comprising a transition metal atom), at least one nitrogen (N) atom, multiple instances of a iigand R and a cvclopentadiene (Cp) ligand. In one such embodiment, the precursor may be represented by the formula Cp₂M(NR₂)₂ - e.g., where M includes one of titanium (Ti), zircomium (Zr) and hafnium (Hf) and where the ligand R is one of a methyl group (Me), ethyl group (Et) and a trimethylsilyl group (SiMe₃). A co-reactant with a precursor of the type Cp₂M(NR₂)₂ may, for example, include one of oxygen (O2), ozone (O3) and water (H₂0).

[0030] In still another embodiment, a precursor is of a type that facilitates the formation of an aluminum aikyl complex - e.g., the precursor including, for example, a coordination center comprising an aluminum (Al ) atom and multiple instances of a ligand R. In one such

embodiment, the precursor may be represented by the formula A1R₃ - e.g., where the ligand R is be one of a methyl group (Me), ethyl group (Et), isopropyl group (iPr) and a tert-butyl group (tBu). A co-reactant with a precursor of the type A1R₃ - to facilitate production of an aluminum alkyl film - may, for example, include one of oxygen (O2), ozone (O3) and water (1 ! >()).

[0031] Still other types of such precursors that may be used in various embodiments to facilitate the formation of a metal oxynitride complex, a metal alkoxide complex or a metal amide complex. For example, a precursor (such as one of those described elsewhere herein) which facilitates the formation of a metal oxide complex may, in some embodiments, facilitate the formation of a metal oxynitri de complex. In such embodiments, ammonia (NH₃) or hydrazine (N₂H₄) may function as a co-reactant with the precursor. Alternatively, a precursor (such as one of those described elsewhere herein) which facilitates the formation of a metal nitride complex may, in some embodiments, facilitate the formation of a metal oxynitride complex - e.g., where oxygen (O2), ozone (O3) or water (H₂0) function as a co-reactant with the precursor. [0032] Another precursor (such as one of those described elsewhere herein) which facili tates the formation of a metal oxide complex may, in some embodiments, facilitate the formation of a metal oxynitride complex. In such embodiments, ammonia (NH₃) or hydrazine (N2H4) may function as a co-reactant with the precursor. Different combinations of the precursors and co- reactants described herein may be various combined to achieve other more particular types of oligomer complexes - e.g., including a metal alkoxide complex, metal amide complex and/or the like.

[0033] Referring again to FIG, 2, method 200 may further comprise, at 220, reacting the precursor and the co-reactant with one another while the precursor and the co-reactant are disposed in or on a semiconductor substrate. The reacting at 220 may include a continuation of the reaction initiated at 210. For example, the initiating at 210 may include bringing the precursor and co-reactant into contact with each other prior to application on the silicon substrate (and/or on a layer disposed on the silicon substrate). The mixture may be deposited across patterned features made, for example, from a combination of various silicon material and carbon based hard masks. In such an embodiment, the reacting at 220 includes applying the mixture of precursor and co-reactant while the reaction by the mixture is taking place. For example, an at least partial dissolving of the precursor by the co-reactant may be initiated at 210, where application of the mixture is performed during such dissolving to enable relatively large molecular weight molecules to form (during or as a result of the reacting at 220) into a relatively- dense and more chemically inert dielectric material . In another embodiment, reaction may be initiated by mixture of the precursor and co-reactant prior to spin coating (or other application) of the mixture on the semiconductor substrate.

[0034] Conditions during the initiating at 210 and/or the reacting at 220 may, for example, include a temperature in a range of 10° C to 100° C and/or a pressure in a range from

atmospheric pressure (0.0013 torr) to 0.01 torr - e.g., wherein the reaction time is in a range of five (5) minutes to two hours. However, the temperature, pressure and time of the reaction may vary according to implementation-specific details, some or all of which may not be limiting on some embodiments.

[0035] Method 200 may further include curing a product of the reacting at 230 to form an oiigomeric material on the semiconductor substrate. The curing at 230 may include exposing the product to a curing agent and/or to an increased temperature. By way of illustration and not limitation, a curing agent used for the curing at 230 may include one of ammonia (NH₃), ozone (O3), hydrazine (N2H4), oxygen (O2), Conditions during the curing at 230 may, for example, include a temperature in a range of 300° C to 600° C and/or a pressure in a range of 1 bar to 3 bar - e.g., wherein the curing time is in a range of ten (10) minutes to two hours. However, some embodiments are not limited with respect to the temperature, pressure and/or time of curing, some or all of which may vary according to implementation-specific details. In some embodiments where, for example, a co-reactant is applied using some chemical vapor deposition methods, a plasma assist may be used - e.g., wherein a co-reactant such as ammonia (NI¾) is introduced via such a plasma.

[0036] Prior to the curing at 230, a portion of the product may be subsequently removed, leaving the reacted precursor material on a semiconductor wafer as a thin film - e.g., having a thickness in a range of 50 nanometers (nm) to 200 nm. Additionally or alternatively, method 200 may further comprise subtractive processing (not shown) to remove portions of the cured oligomer material. Such subtractive processing may, for example, be performed with a dilute acid (e.g., 1% hydrofluoric acid) solution or, in other embodiments, with a base solution (e.g. 2%-3% tetram ethyl ammonium hydroxide). [0037] The resulting cured oligomeric material may be dense, highly cross-linked, and exhibit low chemical reactivity. In some embodiments, chemical reactivity, dielectric characteristics and/or other physical properties of the resulting dielectric structures may be determined at least in part by a residual amount of residue including, for example, by-products resulting from the reacting at 220, By way of illustration and not limitation, trace elements such as carbon, silicon, etc. (e.g., residue of reaction between iigands and co-reactant) may remain after curing. Some embodiments enable tight control of the amount of such residue by selecting the duration and/or conditions of the reacting at 220 and/or of the curing at 230. In some embodiments, the amount of residual material (s) is in a range of 1% to 20% (by weight) of an oligomeric material. In enabling improved flow characteristic (and control thereof) during a precursor/co-reactant reaction, some embodiments according to method 200 may provide dielectric structures having an aspect ratio that, for example, is up to 20: 1.

[0038] FIG. 5 illustrates a computing device 500 in accordance with one embodiment. The computing device 500 houses a board 502. The board 502 may include a number of

components, including but not limited to a processor 504 and at least one communication chip 506. The processor 504 is physically and electrically coupled to the board 502. In some implementations the at least one com muni cation chip 506 is also physically and electrically coupled to the board 502. In further implementations, the communication chip 506 is part of the processor 504. [0039] Depending on its applications, computing device 500 may include other components that may or may not he physically and electrically coupled to the board 502. These other components include, but are not limited to, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flash memory, a graphics processor, a digital signal processor, a crypto processor, a chipset, an antenna, a display, a touchscreen display, a touchscreen controller, a batter}', an audio codec, a video codec, a power amplifier, a global positioning system (GPS) device, a compass, an accelerometer, a gyroscope, a speaker, a camera, and a mass storage device (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth).

[0040] The communication chip 506 enables wireless communications for the transfer of data to and from the computing device 500. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non- solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip 506 may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.1 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LIE), Ev- DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device 500 may include a plurality of communication chips 506. For instance, a first communication chip 506 may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip 506 may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

[0041] The processor 504 of the computing device 500 includes an integrated circuit die packaged within the processor 504, The term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory. The

communication chip 506 also includes an integrated circuit die packaged within the

communication chip 506. [0042] In various implementations, the computing device 500 may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set- top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device 500 may be any other electronic device that processes data.

[0043] Some embodiments may be provided as a computer program product, or software, that may include a machine-readable medium having stored thereon instructions, which may be used to program a computer system (or other electronic devices) to perform a process according to an embodiment. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., a computer) readable storage medium (e.g., read only memory ("ROM"), random access memory ("RAM:" ), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustical or other form of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0044] FIG. 6 illustrates a diagrammatic representation of a machine in the exemplary form of a computer system 600 within which a set of instructions, for causing the machine to perform any one or more of the methodologies described herein, may be executed. In alternative embodiments, the machine may be connected (e.g., networked) to other machines in a Local Area Network (LAN), an intranet, an extranet, or the Internet. The machine may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The machine may be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular telephone, a web appliance, a server, a network router, switch or bridge, or any machine capable of executing a set of instructions (sequential or othenvise) that specify actions to be taken by that machine. Further, while only a single machine is illustrated, the term "machine" shall also be taken to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methodologies described herein.

[0045] The exemplary computer system 600 includes a processor 602, a main memory 604 (e.g., read-only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM: (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 606 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 618 (e.g. , a data storage device), which communicate with each other via a bus 630,

[0046] Processor 602 represents one or more general -purpose processing devices such as a microprocessor, central processing unit, or the like. More particularly, the processor 602 may be a complex instruction set computing (CISC) microprocessor, reduced instruction set computing (RISC) microprocessor, very long instruction word (VLIW) microprocessor, processor implementing other instruction sets, or processors implementing a combination of instruction sets. Processor 602 may also be one or more special -purpose processing devices such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), network processor, or the like. Processor 602 is configured to execute the processing logic 626 for performing the operations described herein.

[0047] The computer system 600 may further include a network interface device 608. The computer system 600 also may include a video display unit 610 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 612 (e.g., a keyboard), a cursor control device 614 (e.g., a mouse), and a signal generation device 616 (e.g., a speaker).

[0048] The secondary memory 618 may include a machine-accessible storage medium (or more specifically a computer-readable storage medium) 632 on which is stored one or more sets of instructions (e.g., software 622) embodying any one or more of the methodologies or functions described herein. The software 622 may also reside, completely or at least partially, within the main memory 604 and/or within the processor 602 during execution thereof by the computer system 600, the main memory 604 and the processor 602 also constituting machine- readable storage media. The software 622 may further be transmitted or received over a network 620 via the network interface device 608.

[0049] While the machine-accessible storage medium 632 is shown in an exemplary embodiment to be a single medium, the term "machine-readable storage medium" should be taken to include a single medium or multiple media (e.g., a centralized or distributed database, and/or associated caches and servers) that store the one or more sets of instructions. The term "machine-readable storage medium" shall also be taken to include any medium that is capable of storing or encoding a set of instructions for execution by the machine and that cause the machine to perform any of one or more embodiments. The term "machine-readable storage medium" shall accordingly be taken to include, but not be limited to, solid-state memories, and optical and magnetic media.

[OOSOj In one implementation, an integrated circuit ( C) device comprises a semiconductor substrate, and dielectric structures formed in or on the semiconductor substrate, the dielectric structures each including an oligomeric material, wherein oligomers of the oligomer] c material each include units arranged along a chain, the units each including an atom of a transition metal. In an embodiment, the oligomeric material comprises a metal oxide complex. In another embodiment, the oligomeric material comprises a metal nitride complex. In another

embodiment, the oligomeric material comprises a metal oxynitride complex. In another embodiment, the oligomeric material comprises a metal oxycarbide complex. In another embodiment, the oligomeric material comprises a metal alkoxide complex. In another embodiment, the oligomeric material comprises a metal amide complex. In another

embodiment, the oligomeric material comprises an aluminum alkyl complex. In another embodiment, the dielectric structures further comprise one or more residual materials, wherein an amount of the one or more residual materials is in a range of 1% to 20% by weight of the oligomeric material.

[0051] In another implementation, a method comprises reacting a precursor and a co-reactant with one another while the precursor and the co-reactant are disposed in or on a semiconductor substrate, wherein molecules of the precursor each include a respecti ve coordination complex comprising a coordination center including at least one transition metal atom, and a plurality of ligands. The method further comprises curing a product of the reacting to form an oligomeric material on the semiconductor substrate.

[0052] In an embodiment, the oligomeric material comprises a metal oxide complex. In another embodiment the oligomeric material comprises a metal nitride complex. In another embodiment, the oligomeric material comprises a metal oxynitride complex. In another embodiment, the oligomeric material comprises a metal oxycarbide complex. In another embodiment, the oligomeric material comprises a metal alkoxide complex. In another embodiment, the oligomeric material comprises a metal amide complex. In another

embodiment, the oligomeric material comprises an aluminum alkyl complex. In another embodiment, the co-reactant is one of water, ammonia, ozone and hydrazine. In another embodiment, curing the product includes curing with a curing agent comprising one of ozone, ammonia and water. In another embodiment, curing the product includes increasing a temperature of the product. In another embodiment, the precursor i ncludes hafnium tert- butoxide, and the co-reactant includes water. In another embodiment, the precursor includes tris(dimethylamino)cyclopentadienylzirconium, and wherein the co-reactant includes water. In another embodiment, the method further comprises starting any reaction of the precursor and the co-reactant with one another after one of the precursor and the co-reactant is disposed on the semiconductor substrate. In another embodiment, the method further comprises spin coating on the semiconductor substrate a mixture including the precursor and the co-reactant. In another embodiment, the method further comprises performing a chemical vapor deposition of one of the precursor and the co-reaetant on the semiconductor substrate. In another embodiment, the reacting further produces one or more residual materials, wherein an amount of one or more residual materials after the curing is in a range of 1% to 20% by weight of the oligomeric material .

[0053J Techniques and architectures for forming structures compri sing an oligomer material are described herein. In the above description, for purposes of explanation, numerous specific detai ls are set forth in order to provide a thorough understanding of certain embodiments. It wi ll be apparent, however, to one skilled in the art that certain embodiments can be practiced without these specific details. In other instances, structures and devices are shown in block diagram form in order to avoid obscuring the description.

[0054] Reference in the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteri stic described in connection with the embodiment is included in at least one embodiment of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment.

[0055] Some portions of the detailed description herein are presented in terms of algorithms and symbolic representations of operations on data bits within a computer memory. These algorithmic descriptions and representations are the means used by those skilled in the computing arts to most effectively convey the substance of their work to others skilled in the art. An algorithm is here, and generally, conceived to be a self-consistent sequence of steps leading to a desired result. The steps are those requiring physical manipulations of physical quantities. Usually, though not necessarily, these quantities take the form of electrical or magnetic signals capable of being stored, transferred, combined, compared, and otherwise manipulated. It has proven convenient at times, principally for reasons of common usage, to refer to these signals as bits, values, elements, symbols, characters, terms, numbers, or the like.

[0056] It should be borne in mind, however, that all of these and similar terms are to be associated with the appropriate physical quantities and are merely convenient labels applied to these quantities. Unless specifically stated otherwise as apparent from the discussion herein, it is appreciated that throughout the description, discussions utilizing terms such as "processing" or "computing" or "calculating" or "determining" or "displaying" or the li ke, refer to the action and processes of a computer system, or similar electronic computing device, that manipulates and tra sforms data represented as physical (electronic) quantities within the computer system's registers and memories into other data similarly represented as physical quantities within the computer system memories or registers or other such information storage, transmission or display devices.

[0057] Certain embodiments also relate to apparatus for performing the operations herein. This apparatus may be specially constructed for the required purposes, or it may comprise a general purpose computer selectively activated or reconfigured by a computer program stored in the computer. Such a computer program may be stored in a computer readable storage medium, such as, but is not limited to, any type of disk including floppy disks, optical disks, CD-ROMs, and magnetic-optical disks, read-only memories (ROMs), random access memories (RAMs) such as dynamic RAM (DRAM), EPROMs, EEPROMs, magnetic or optical cards, or any type of media suitable for storing electronic instructions, and coupled to a computer system bus.

[0058] The algorithms and displays presented herein are not inherently related to any particular computer or other apparatus. Various general purpose systems may be used with programs in accordance with the teachings herein, or it may prove convenient to construct more specialized apparatus to perform the required method steps. The required structure for a variety of these systems will appear from the description herein. In addition, certain embodiments are not described with reference to any particular programming language. It will be appreciated that a variety of programming languages may be used to implement the teachings of such

embodiments as described herein.

[0059] Besides what is described herein, various modifications may be made to the disclosed embodiments and implementations thereof without departing from their scope. Therefore, the illustrations and examples herein should be construed in an illustrative, and not a restrictive sense. The scope of the invention should be measured solely by reference to the claims that follow.

Claims

What is claimed is:

1. An integrated circuit (IC) device comprising: a semiconductor substrate; and dielectric structures formed in or on the semiconductor substrate, the dielectric structures each including an oiigomeric material, wherein oligomers of the oiigomeric material each include units arranged along a chain, the units each including an atom of a transition metal.

2. The IC device of claim 1, wherein the oiigomeric material comprises a metal oxide complex.

3. The IC device of claim 1, wherein the oiigomeric material comprises a metal nitride complex.

4. The IC device of claim 1, wherein the oiigomeric material comprises a metal oxynitride complex.

5. The IC device of claim 1, wherein the oiigomeric material comprises a metal oxycarbide complex.

6. The IC device of claim 1, wherein the oiigomeric material comprises an aluminum alkyi complex.

7. The IC device of claim 1, the dielectric structures further comprising one or more residual materials, wherein an amount of the one or more residual materials is in a range of 1% to 20% by weight of the oligomeric material.

8. A method comprising: reacting a precursor and a co-reactant with one another while the precursor and the co- reactant are disposed in or on a semiconductor substrate, wherein molecules of the precursor each include a respective coordination complex comprising: a coordination center including at least one transition metal atom; and a plurality of ligands; and curing a product of the reacting to form an oligomeric material on the semiconductor substrate.

9. The method of claim 8, wherein the oligomeric material comprises a metal oxide complex.

10. The method of claim 8, wherein the oligomeric material comprises a metal nitride complex.

1 1. The method of claim 8, wherein the oligomeric material comprises a metal oxynitride complex.

12, The method of claim 8, wherein the oligomeric material comprises a metal oxycarbide complex.

13. The method of claim 8, wherein the oligomenc material comprises an aluminum alkyl complex.

14. The method of claim 8, wherein the co-reactant is one of water, ammonia, ozone and hydrazine.

15. The method of claim 8, wherein curing the product includes curing with a curing agent comprising one of ozone, ammonia and water,

16. The method of claim 8, wherein curing the product includes increasing a temperature of the product.

17. The method of claim 8, wherein the precursor includes hafnium tert-butoxide, and the co- reactant includes water.

18. The method of claim 8, wherein the precursor includes

tris(dimethylamino)cyclopentadienylzirconium, and wherein the co-reactant includes water.

19. The method of claim 8, further comprising starting any reaction of the precursor and the co-reactant with one another after one of the precursor and the co-reactant is disposed on the semiconductor substrate.

21. The method of claim 8, further comprising spin coating on the semiconductor substrate a mixture including the precursor and the co-reactant.

22. The method of claim 8, further comprising performing a chemical vapor deposition of one of the precursor and the co-reactant on the semiconductor substrate.

23. The method of claim 8, wherein the reacting further produces one or more residual materials, wherein an amount of one or more residual materials after the curing is in a range of 1% to 20% by weight of the oligomeric material .