WO2018073309A1 - Coating device with gas inlet element arranged under the substrate in the direction of gravity - Google Patents

Coating device with gas inlet element arranged under the substrate in the direction of gravity

Info

Publication number
WO2018073309A1
WO2018073309A1 PCT/EP2017/076619 EP2017076619W WO2018073309A1 WO 2018073309 A1 WO2018073309 A1 WO 2018073309A1 EP 2017076619 W EP2017076619 W EP 2017076619W WO 2018073309 A1 WO2018073309 A1 WO 2018073309A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
mask
substrate
gas inlet
element
characterized
Prior art date
Application number
PCT/EP2017/076619
Other languages
German (de)
French (fr)
Inventor
Markus Gersdorff
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Abstract

The invention relates to a device for coating one or more substrates (1), having a gas inlet element (2) for introducing a gaseous starting material, which condenses or reacts on the substrate (1) and on a mask (3) masking said substrate (1) to form a coating (4, 4'), into a process chamber (6) arranged between the gas inlet element (2) and a substrate holder (5) for holding one or more substrates, and having a shielding element (7) which can be moved out of a storage position outside the process chamber (6) into a shielding position in the process chamber (6) and comprises a closed shielding surface which, in the shielding position, lies between the gas inlet element and the mask. The substrate holder (5) is arranged above the gas inlet element (2) against the effective direction of gravity (G). The shielding element (7) has, on its shielding surface side facing the substrate holder (5), a recess (8, 12) for collecting particles of the coating (4') coming off the mask (3) or is at least partially lined with an electrostatically chargeable film (12).

Description

description

Coating apparatus having arranged in the direction of gravity below the substrate gas inlet member

Technical Field

[0001] The invention relates to an apparatus for coating one or more substrates, with a gas inlet member for introducing a masking on the substrate and the substrate mask condensing to a coating or reacting the gaseous starting material into a of a between the gas inlet member and a substrate holder for holding or more substrate arranged process chamber and to one of a storage position outside the process space into a screen position in the process chamber can be brought shield member having a closed screen surface which is located in the screen position between the gas inlet member and the mask.

State of the art

[0002] A device of the type described above is described in EP 2536865 Bl. A substrate holder is located in a process chamber in direction of gravity below a gas inlet element. a substrate is applied at least to the substrate holder. Through the gas inlet element gaseous source materials, eg. By means of a carrier gas are transported vapors fed into the process chamber. The vapors condense on the surface of the substrate to a particular organic layer. To this layer, for example in separate sub-layer portions. structuring for the production of OLED screens, a contact mask is placed on the substrate so that the coating takes place only in the windows of the contact mask prior to coating. but a coating takes place on the land portions of the mask. [0003] The temperature-controlled gas inlet member is shielded by means of a screen element from the likewise temperature-controlled substrate holder during the exchange of the substrate or the mask change. A first portion of the process chamber, which is in particular heated and includes the gas inlet member is, thus, separated from a second portion of the process chamber, which is for example cooled..

[0004] It may be technologically necessary to invert the device with respect to the direction of the gravitational force, so that the substrate holding substrate holder - to the action of gravity, based - above the Ga seinlassorganes is arranged. While the mask is held on the substrate or susceptor by means of gravity in the initially described orientation, it can in the inverted orientation may be required, the substrate and the mask by complementary means, in particular forces to the downwardly facing supporting surface of the substrate holder to captivate. The mask is in particular held mechanically supported only at the edge, so that they can bend after release from the substrate in the middle area down. This mechanical deformation may result in detachment of the deposited on the ridges of the mask layer.

[0005] a method for the production of semiconductor layers is in each case known from the US 5,407,485, US 2010/044213 and US 8,617,314, in which the gas inlet element is arranged below a substrate holder. Between substrate holder and gas inlet element a screen element can be brought.

Summary of the Invention

[0006] The invention has for its object to provide measures with which it is avoided that during handling of the mask from the coating of the mask webs becoming detached particles fall on the gas inlet member. [0007] The object is achieved by the specified in the claims invention. The sub-claims represent advantageous developments, but also form independent solutions of the task simultaneously.

[0008] First and foremost, it is proposed that a shield element which has a closed screen surface, is moved from a storage position outside the process space into a screen position in the process chamber. The shield element then takes a position above which the substrate holder, the substrate and the mask are arranged below the screen element, the gas inlet member. If now the mask, for example. By a horizontal backward displacement of engaging only at the edge of the mask mask holder dissolved from the substrate and bend which, according to mask the effect of gravity, so can fall down from the top of the mask releasing particles from the mask are However collects listed by the provided on the face plate means for collection of the particles. In a preferred embodiment it is provided that the means for accumulating the particles are formed from an at least one recess on the side facing the substrate holder side of the screen surface. The screen surface preferably has a layout that is larger than the outline of the mask. The process chamber with a correspondingly low total pressure in the product falling from the mask particles can then collect in the recess itself. but it can also be provided that the faceplate with the means can be electrostatically charged. For this purpose, it is especially provided that the shield member comprises an electrostatically chargeable film. This measure is particularly advantageous when intended to ensure that particles having a mean particle diameter of a μιτι or less build up on the screen surface. As means for forming the electrostatic charging a high-voltage generator can be provided with the selected surface portions of the screen surface, which are electrically insulated from the environment, advertising charged the can. Then passing to the detaching of the mask particles in effect attractive electrostatic forces provide the particles directed to the shield member movement. The electrostatic potential is generated so that the particles do not charge when touching the surface of the shield element. The surface of the shield element can therefore be designed to be electrically insulating. Among them is preferably an be brought to an electrical potential metallization. For this purpose, it is provided in particular that the substrate holder facing the broad surface of the shield element is coated with electrostatically chargeable films or coated. The shield element has two positions. In a stowed position, the shield member is in a Verwahrkammer. This chamber can be connected to an opening of the process chamber. This opening can be closed by a gate or a slider. Within the Verwahrkammer the shield element can be cleaned. There are provided re insbesonde- means to solve the accumulated particles on the screen element from the screen element. Example, it is. Possible that gas outlet nozzles are arranged within the Verwahrkammer or suction nozzles to remove using gas flows, the particles from the screen element. but it may also be means provided with which which accumulated in the surface of the shield element particles are electrostatically charged with the same potential, with the shield element is charged to generate a repulsive force with which the electrostatically charged particles are repelled from the screen element , In order to bring the shield element in the shielding position, the slider or the door has to be opened. The shield element is then brought into the process space between substrate holder and gas inlet element. The screen element can be used in addition to, to shield the gas inlet element thermally from the substrate holder. The substrate holder and the gas inlet element are preferably heated to different temperatures from one another, for example. Cooled or heated, so that in the process space exploiting Knitting Schirmele- ment radiant heat between substrate holder and gas inlet element itself is transferred without one. It is particularly provided that the gas inlet member is heated and that the substrate holder is cooled. By means of an evaporator, which is preferably arranged outside the housing of the apparatus, the above-mentioned organic vapors are produced, which are brought into the process chamber with a carrier gas. By means of a scoop is placed a predetermined rate of the organic powder in a carrier gas stream. The aerosol so generated is brought by means of an aerosol line to an evaporator having heated surfaces with which the carrier gas and the particles carried in the carrier gas to be heated. Instead of a powder also droplets of a liquid can be supplied to the evaporator. The solid or liquid particles are heated in the evaporator in such a manner that they reach a gaseous state. The vapors thus generated are transported to the gas inlet member by means of a supply line. Through a variety of Gasaus- the gas inlet element outlet openings occur gaseous starting materials in the process chamber. The gas outlet openings are arranged in sieve-like manner on a gas discharge surface of the gas inlet member, which faces a substrate support surface of the substrate holder. The surface extension of the gas discharge surface is preferably greater than the area extent of the up lying on the substrate holder substrate. The distance between the gas discharge surface and the substrate support surface is preferably less than the forming at a gas flow boundary layer above the substrate or lower than a that forms there diffusion boundary layer. To this end, the clear distance between the gas inlet element and the substrate holder is preferably <70mm. It may be 25 to 50 mm. The surface of the substrate holder and the surface of the discharge area can be in the range of one to several square meters. The mask and the screen element have a similar layout area, the layout area of ​​the shield element is at least as large as the floor area of ​​the gas inlet element or the mask. In order to hold the mask on the Way down the side to be coated of the substrate, the mask magnetic can see comprise zones. The magnetic zones can thereby be formed that the mask has magnetized regions or that the mask comprises matable magnetic areas. The substrate holder will then have corresponding magnetic areas, which are either magnetizable, so that display the magnetic areas of the mask to the substrate holder adhere or are themselves magnetic, eg. By an electromagnet can be magnetized, so that the magnetizable zones of the mask to the magnetic zones the substrate holder adhere. Between the mask and substrate holder, the substrate to be coated is located. In a substrate change, the screen element from the Verwahrkammer is first brought into a shielding position in which it is located vertically below the mask. Then, the mask is removed by a movement in the direction of the surface normal to the substrate support surface of the substrate holder from the substrate. Here, the magnetic adhesion of the mask to the substrate or the substrate holder dissolves, so that the mask by bulges as described above across the medium range downward. The associated deformation of the mitbeschichteten during coating of the substrate webs of the mask leads to a detachment of the deposited on the mask layer and the formation of particles which move downward where they are collected by the shield member so that they are not the accelerated by gravity reach the gas inlet organ. The shielding member may include a shield plate. The

Screen plate may have one or more recesses that form in the direction of the substrate wells. In these wells, the particles can collect. The substrate is carried out changes or the lowering of the mask at a low total pressure within the process chamber, so also the smallest diameter particles move on a ballistic trajectory from the mask to the screen element. In order small diameter particles at higher total pressures or smallest particles at subatmospheric sure to catch the screen element, it is envisaged that the shield element can be electrostatically charged. This is preferably done by the high voltage generator. The recesses are preferably surrounded by an edge. The shielding member may include a core with a heat insulation body beyond, so that it can be used for thermal insulation, in particular for radiation heat transfer insulation.

Brief Description of Drawings

[0009] Embodiments of the invention are explained below with reference to examples of joined drawings. Show it:

Fig. 1 is a highly schematic and not drawn to scale in the manner of a

Vertical section a first embodiment, wherein a mask is held 3 by means of a mask holder 14 on a substrate, the substrate rests against a bearing surface of a substrate holder 5 during a coating process,

Fig. 2 is a view according to Figure 1, but processing process after the coating, wherein a shield member is brought 9 in the area beneath the mask 3 and the mask 3 by lowering the mask holder 14 has been released from the substrate 1,

Fig. 3 shows a second embodiment of a screen element 7,

Fig. 4 is increased, a cross-section through a mask 3 with

Magnet zone 17, and

Fig. 5 is increased, the cut-V in Fig. 1. Description of the embodiments

[0010] The embodiment shown in Figures 1 and 2 shows very schematically a vertical section through a process chamber of a coating apparatus which is disposed within a gas-tight to the outside housing. For clarification, the ratio of width B to height D is not to scale.

[0011] Within the housing 27 is located - relative to the direction shown by arrow G direction of the gravitational force below a process space 6 - a gas inlet member 2 in the form of a showerhead, to which a gaseous raw material can be fed into the process chamber. 6 A typical face diagonal see the side facing the process chamber 6 gas discharge surface of the gas inlet element 6 is one to several meters.

[0012] The gas inlet member 2 is fed with a supply line 26 with the gaseous starting material. In order to avoid condensation of vapor within the gaseous starting material on the supply line 26 or within the gas inlet member 2, the gas inlet member 2 and the supply line 26 to be heated.

[0013] In order to generate the steam, a powder from a powder storage 22 by means of a carrier gas stream, which is fed by a carrier gas supply line 21 into an aerosol generator 23 is. It is also contemplated that liquid keitströpfchen be fed into the aerosol generator 23rd In the aerosol generator 23, the powder particles or the liquid droplets are fed into a carrier gas stream, so that an aerosol is formed. The transported in the carrier gas stream suspended particles are fed through a line 24 to an evaporator aerosol 25th There, the suspended particles of the aerosol are sols evaporated by application of heat. The evaporator has heat transfer surfaces 25, which are heated in order to transfer heat to the carrier gas and transported by the carrier gas particles so that the particles evaporate.

[0014] arranged through showerhead-like or sieve-like in the gas exit surface of the Ga 2 seinlassorgans openings enters the steam into the process chamber. 6 At a vertical distance D above the gas exit face 18 of the gas inlet member 2 there is a substrate support surface of a cooled substrate holder 5. The vertical distance D is in the range between 20 and 70mm. Preferably, the distance D is approximately at 25mm. The distance D is smaller than the forming in the boundary layer deposition and in particular less than 70mm.

[0015] By means of a mask holder 14 is placed a contact mask against a surface of an adjacent abutment surface on the substrate substrate. 1 The substrate 1 is preferably a glass plate. The mask 3 has a plurality of regularly arranged windows 15 and the windows 15 from each other, separating webs 16. Some of the ribs 16 may be formed magnetically. They may consist of magnetically polarized material or consist of magnetically polarizable material, for example. Invar. The mask 3 is preferably maintained by means of magnetic force in flat contact on the substrate. 1 For this purpose, the substrate holder magnets or non-magnetic areas 5 as shown is formed, in order to exert a force directed in the vertical direction of attraction force to the mask. 3

[0016] The transported by the carrier gas flow through the openings of the gas inlet member 2 in the process chamber 6 steam, which is in particular a vapor of organic molecules, condenses not only in the region of the window 15 on the substrate 1, but also in the region of the webs 16 on the mask 3. [0017] After the deposition of the layer 4 on the substrate 1 and the layer 4 'on the grid bars 16, a door, a gate or closure plate 20 which closes an opening 11 of a Verwahrkammer 10, opened. Within the Verwahrkammer 10, a shield member is 7. The screen member 7 has as well as the substrate 1 or the substrate 1 covering mask 3 is rectangular in plan. The screen member 7 has a closed surface forming screen plate 9, whose plan view is larger than the outline of the mask 3. By means not shown guide means, eg. A guide arm or guide rails, the shielding member 7 from the esterification true chamber 10 into the process space 6 between the gas inlet member 2 and brought mask. 3

[0018] Then, the mask is separated from the coated side of the substrate 1. 3 For this purpose, initially the electromagnets, not shown in the drawings are no longer supplied with current within the substrate holder 5, so that the ridges of the mask 3 is not magnetically driven upward against the substrate. 1 This has the consequence that the central surface portion of the mask 3 detaches from the substrate because of the mask holder 14 engages supportive exclusively at the edges of the mask. 3 To change the mask 3 and the substrate 4 of the mask holder is lowered 14 from the presented ones shown, in Figure 1 to the position shown in the Figure 2 position.

[0019] The figure 1 shows the device coating process in a position during the loading.

[0020] The opening 11 at which the Verwahrkammer 10 to the process chamber, which includes the process chamber 6, adjacent, is closed during the coating with a gate 20th If the gate 20 is opened, the shield member 7 may be through the opening 11 of the dangers Verwahrkammer 10 in the process chamber 6 ren. The layout of the faceplate 9 is large enough to completely cover the gas inlet member. 2 The screen member 7 forms a shield plate 9, which gives a closed screen surface of the screen element. 7 [0021] In the shielding position, the shielding plate 9 of the shield element 7 is located vertically below the mask 3. The shield member 7 is configured such that it during the lowering of the mask 3 and a consequent deformation of the mask 3 from the surface of the mask 3 flaking particles the coating 4 can catch '.

[0022] To this end, has the holder 5 facing the substrate side of the shielding surface means for accumulating coming loose from the mask 3 particles of the coating 4 '. These agents include, in the illustrated in Figures 1 and 2, the edges 19 of the screen plate 9 of the shield element 7 which surround a recess 8 of the faceplate. 9 The shielding plate 9 may include one or more such recesses 8 which are arranged in a plane next to each other.

[0023] The embodiment of a screen element 7 shown in Figure 3 is not only a heat-insulating insulation body 13 within the core, but also an electrostatically chargeable film 12, with the at least there is facing the substrate holder 1 side of the shield plate 9 is formed. The film 12 can be electrostatically charged by means of a not shown high-voltage source. The electrostatic charging of the electrostatically chargeable film 12 leads to the formation of electrostatic forces, which attracts from the mask 3 detaching particles. [0024] Figure 4 shows by the reference numeral 17 is a magnetic zone of the mask 3, which is made of Invar. The magnetic zone can consist of a ferromagnetic material. It can be magnetic. but it is preferably only magnetic. [0025] The mask 3 can be promoted, together with the screen member 7 from the process space 6 out. This can be done through the opening. 11 The mask 3 can be stored for this purpose on the screen element. 7

[0026] With the door 12 closed by the opening 11 disposed within the Verwahrkammer 10 shield plate 9 may be of the shield element 7 to be cleaned from the accumulated particles. This can be by means of a

Gas stream are produced, which can be generated by nozzles, in particular gas discharge nozzles, but also suction nozzles. It is also a purely mechanical cleaning of the shield element 7 is possible. It is also possible to remove which accumulated on the screen member 7 particles by means of electrostatic forces of the surface of the faceplate. 9

[0027] The foregoing embodiments are illustrative of the total acquired by the registration inventions also further form the prior art at least by the following combinations of features in each case independently, namely: [0028] A device which is characterized in that the substrate holder 5 against the effective direction of gravity G above the Gaseinlassor- Ganes 2 is arranged and that the screen element 7 has on its side facing the substrate holder 5 side of the screen surface means 8, 12 for accumulating coming loose from the mask 3 particles of the coating 4 '. [0029] A device which is characterized in that the substrate holder 5 facing the side of the screen surface has at least one recess 8 for collecting the particles 4 '.

[0030] A device which is characterized in that the Schirmele- element 7 can be electrostatically charged, and means are provided to charge the screen area.

[0031] A device which is characterized in that the shield element 7 from a Verwahrkammer 10 6 forming process chamber can be brought through an opening 11 in a the process chamber. [0032] A device which is characterized in that the shielding member 7 is at least partially covered with an electrostatically chargeable film 12th

[0033] A device which is characterized in that the shield element 7 has a heat insulating body. 13 [0034] A device which is characterized in that the edge of the mask is held by a mask frame 14. 3

[0035] A device which is characterized in that the mask includes 3 magnetic or magnetizable zones 17, to keep them looking with magnetic force on the downward side of the substrate to be coated wide. 1

[0036] A device which is characterized in that the substrate holder 5 facing the gas discharge surface 18 of the gas inlet member 29 Any artwork is least as large as the pointing towards the gas inlet member 2 surface to be coated of the substrate. 1

[0037] A device which is characterized in that the ground plan of the screen area is larger than the outline of the mask 3. [0038] One use, which is characterized in that when changing the mask 3 and / or of the substrate 1 in front of a besides contacting the mask 3 from the substrate 1, the shield element is brought into the screen position 7 and when releasing the contact between mask 3 and substrate 1, the means 8, 12 become detached from the mask 3 particles of the coating 4 'accumulate so that the particles do not for get gas inlet member. 2

[0039] All disclosed features are essential to the invention (for himself, but also in combination with one another). The disclosure content of the associated / attached priority documents (copy of the prior application) in full in the disclosure of the application, also for the purpose of incorporating features of these documents in claims of the present application. The sub-claims characterize features with their independent inventive developments of the prior art, in particular to perform based on these claims divisional applications.

List of reference numerals

1 substrate 27 housing

2 gas inlet element

3 mask

4 coating / particle

4 'coating / particle

5 substrate holder

6 process space

7 screen element

8 recess spacing

9 faceplate gravity

10 Verwahrkammer

11 opening

12 is electrically rechargeable film

13 insulation body

14 mask holder

15 window

16 web

17 magnetic zone

18 discharge area

19 edge

20 Tor

21 carrier gas supply line

22 powder storage

23 aerosol generator

24 aerosol line

25 evaporator

26 supply line

Claims

claims
Device for coating one or more substrates (1) having a gas inlet element (2) for introducing a on the substrate (1) and a substrate (1) masking mask (3) to a coating (4, 4 ') condensing or reacting gaseous starting material can be brought into a between the gas inlet member (2) and a substrate holder (5) for holding the one or more substrate arranged process chamber (6) and to one of a storage position outside the process chamber (6) in a shielding position in the process chamber (6) screen element (7) having a closed screen surface which is located in the screen position between the gas inlet member and the mask, characterized in that the substrate holder (5) against the effective direction of gravity (G) above the gas inlet element (2) is arranged and that the screen element (7) facing on its to the substrate holder (5) side of the screen surface means (8, 12) for accumulating from the mask (3) expectorant it comprises particles of the coating (4 ').
2. Device according to claim 1, characterized in that the
Substrate holder (5) facing side of the screen surface at least one recess (8) for collecting the particles (4 ').
Device according to one of the preceding claims, characterized in that the shield element (7) is electrostatically chargeable and means are provided to charge the screen area.
Device according to one of the preceding claims, characterized in that the shield element (7) consists of a Verwahrkammer (10) through an opening (11) forming a process chamber can be brought into the process chamber (6).
5. Device according to one of the preceding claims, characterized in that the shield element (7) is covered at least partially with an electrostatically chargeable sheet (12).
Device according to one of the preceding claims, characterized in that the shield element (7) comprises a heat insulation body (13).
7. Device according to one of the preceding claims, characterized in that the edge of the mask (3) by a mask holder (14) is held.
Device according to one of the preceding claims, characterized in that the mask (3) comprises magnetic or magnetizable zones (17), to keep them with the magnetic force at the downwardly facing side of the substrate to be coated wide (1).
Device according to one of the preceding claims, characterized in that the substrate holder (5) facing the gas discharge surface (18) of the gas inlet element (29) is at least as large as that to the gas inlet element (2) facing surface to be coated of the substrate (1).
Device according to one of the preceding claims, characterized in that the ground plan of the screen area larger than the outline of the mask (3).
Use of a device according to one or more of the preceding claims, characterized in that when changing the mask (3) and / or the substrate (1) prior to addition to contacting the mask (3) from the substrate (1), the shield element (7) in the screen position is moved and when releasing the contact between the mask (3) and substrate (1), the means (8, 12) accumulated by the mask dissolving (3) particles of the coating (4 '), so that the particles do not (to the gas inlet element 2) access.
The device or use, characterized by one or more of the characterizing features of one of the preceding claims.
PCT/EP2017/076619 2016-10-20 2017-10-18 Coating device with gas inlet element arranged under the substrate in the direction of gravity WO2018073309A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE102016120006.9 2016-10-20
DE201610120006 DE102016120006A1 (en) 2016-10-20 2016-10-20 Coating apparatus having arranged in the direction of gravity below the substrate gas inlet member

Publications (1)

Publication Number Publication Date
WO2018073309A1 true true WO2018073309A1 (en) 2018-04-26

Family

ID=60268345

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2017/076619 WO2018073309A1 (en) 2016-10-20 2017-10-18 Coating device with gas inlet element arranged under the substrate in the direction of gravity

Country Status (2)

Country Link
DE (1) DE102016120006A1 (en)
WO (1) WO2018073309A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407485A (en) 1993-04-09 1995-04-18 F. T. L. Co., Ltd. Apparatus for producing semiconductor device and method for producing semiconductor device
US20100044213A1 (en) 2008-08-25 2010-02-25 Applied Materials, Inc. Coating chamber with a moveable shield
US8617314B2 (en) 2008-04-14 2013-12-31 Adp Engineering Co., Ltd. Organic deposition apparatus and method of depositing organic substance using the same
WO2014084270A1 (en) * 2012-11-28 2014-06-05 コニカミノルタ株式会社 Thin-film formation device for organic electroluminescent element, and thin-film formation method
EP2536865B1 (en) 2010-02-17 2015-07-22 Aixtron SE Coating device, and method for operating a coating device with a shielding plate
CN105537194A (en) * 2016-01-04 2016-05-04 京东方科技集团股份有限公司 Washing device and washing method for mask and evaporation equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4045953B2 (en) * 2002-12-27 2008-02-13 日新電機株式会社 Vacuum arc vapor deposition apparatus
KR101810683B1 (en) * 2011-02-14 2017-12-20 삼성디스플레이 주식회사 Mask holding device capable of changing magnetic means and deposition equipment using the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407485A (en) 1993-04-09 1995-04-18 F. T. L. Co., Ltd. Apparatus for producing semiconductor device and method for producing semiconductor device
US8617314B2 (en) 2008-04-14 2013-12-31 Adp Engineering Co., Ltd. Organic deposition apparatus and method of depositing organic substance using the same
US20100044213A1 (en) 2008-08-25 2010-02-25 Applied Materials, Inc. Coating chamber with a moveable shield
EP2536865B1 (en) 2010-02-17 2015-07-22 Aixtron SE Coating device, and method for operating a coating device with a shielding plate
WO2014084270A1 (en) * 2012-11-28 2014-06-05 コニカミノルタ株式会社 Thin-film formation device for organic electroluminescent element, and thin-film formation method
CN105537194A (en) * 2016-01-04 2016-05-04 京东方科技集团股份有限公司 Washing device and washing method for mask and evaporation equipment
US20170192366A1 (en) * 2016-01-04 2017-07-06 Boe Technology Group Co., Ltd. Device and method for cleaning mask plate and vapor deposition apparatus

Also Published As

Publication number Publication date Type
DE102016120006A1 (en) 2018-04-26 application

Similar Documents

Publication Publication Date Title
Räder et al. Processing of giant graphene molecules by soft-landing mass spectrometry
Vladimirov et al. Dynamic self-organization phenomena in complex ionized gas systems: new paradigms and technological aspects
Meyyappan A review of plasma enhanced chemical vapour deposition of carbon nanotubes
US6488824B1 (en) Sputtering apparatus and process for high rate coatings
US5811820A (en) Parallel ion optics and apparatus for high current low energy ion beams
US2932588A (en) Methods of manufacturing thin films of refractory dielectric materials
US5855686A (en) Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment
US20030087471A1 (en) Self-aligned hybrid deposition
US20080072822A1 (en) System and method including a particle trap/filter for recirculating a dilution gas
US20040033679A1 (en) Patterning of nanostructures
US4856457A (en) Cluster source for nonvolatile species, having independent temperature control
US20110165326A1 (en) Automatic feed system and related process for introducing source material to a thin film vapor deposition system
US4716340A (en) Pre-ionization aided sputter gun
US6492067B1 (en) Removable pellicle for lithographic mask protection and handling
JPH11158605A (en) Vacuum deposition apparatus, its mask attaching and detaching device thereof and mask alignment method
US20140124364A1 (en) Plasma generation source including belt-type magnet and thin film deposition system using this
US6206970B1 (en) Semiconductor wafer processor, semiconductor processor gas filtering system and semiconductor processing methods
Stepanyuk et al. Adatom self-organization induced by quantum confinement of surface electrons
JPH06196421A (en) Plasma device
JP2005022886A (en) Apparatus and method for depositing microparticles and apparatus and method for forming carbon nanotube
US2635579A (en) Coating by evaporating metal under vacuum
WO2000028104A1 (en) Sputtering apparatus and process for high rate coatings
Den et al. Organic airborne molecular contamination in semiconductor fabrication clean rooms a review
US5380683A (en) Ionized cluster beam deposition of sapphire and silicon layers
Swarbrick et al. Electrospray deposition in vacuum