WO2018064893A1 - 一种光增强的振动能量采集器件和阵列 - Google Patents

一种光增强的振动能量采集器件和阵列 Download PDF

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WO2018064893A1
WO2018064893A1 PCT/CN2017/086546 CN2017086546W WO2018064893A1 WO 2018064893 A1 WO2018064893 A1 WO 2018064893A1 CN 2017086546 W CN2017086546 W CN 2017086546W WO 2018064893 A1 WO2018064893 A1 WO 2018064893A1
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thin film
film transistor
energy harvesting
light
vibration energy
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王凯
伊朗麦内什艾麦德
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Sun Yat Sen University
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Sun Yat Sen University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • the present invention relates to the field of energy harvesting, and more particularly to a light-enhanced vibration energy harvesting device and array.
  • thermoelectric power generation thermoelectric power generation
  • RF energy transmission and piezoelectric energy harvesting are several environmental energy harvesting technologies that are currently concentrated in research. These technologies convert light, thermal, electromagnetic, and mechanical energy into electrical energy in the environment. These technologies have their own advantages and disadvantages, such as photovoltaic technology is relatively mature and energy density is relatively large, but with time-varying and space limitations.
  • thermoelectric power generation is simple and durable, it is not easy to miniaturize and integrate.
  • the energy transmitted by electromagnetic waves emitted by radio frequency transmitters is generally low in density and the transmission distance is very limited.
  • Piezoelectric energy harvesting has the advantages of simple structure, high energy density, long life, no electromagnetic interference, and easy miniaturization and integration.
  • the object of the present invention is to overcome the shortcomings and deficiencies in the prior art, and to provide a light-enhanced piezoelectric gated thin film transistor by integrating a piezoelectric thin film device and a photosensitive thin film transistor to realize light enhancement of energy harvesting and rectifying functions.
  • the vibration energy harvesting device forms an energy harvesting array based thereon.
  • a light-enhanced vibration energy harvesting device comprising a thin film transistor and a piezoelectric unit, which serves as a top gate of the thin film transistor in contact with the top of the thin film transistor.
  • the light-enhanced vibration energy collecting device of the invention uses the piezoelectric unit to collect energy, the thin film transistor rectifies, converts the pressure into a direct current output, and realizes the energy collecting and rectifying functions.
  • the thin film transistor includes a substrate, a bottom gate on the upper portion of the substrate, a bottom dielectric layer on the upper portion of the bottom gate, and a channel on the upper portion of the bottom dielectric layer, respectively on the source sides of the channel and Drain, and located in the channel, source And a top dielectric layer on the top of the drain.
  • the light-enhanced vibration energy harvesting device further includes an energy storage unit and a load, and the energy storage unit and the load are respectively connected to the source of the thin film transistor.
  • the piezoelectric unit includes a piezoelectric film and electrodes respectively disposed on the top and bottom of the piezoelectric film, and the bottom electrode of the piezoelectric unit is bonded to the top of the thin film transistor or directly prepared on the top of the thin film transistor.
  • the bottom electrode of the piezoelectric unit and the top dielectric layer of the thin film transistor are bonded by an anisotropic conductive film or the piezoelectric unit is prepared on the top of the thin film transistor.
  • drain and the bottom gate of the thin film transistor are connected to the bottom electrode of the piezoelectric unit.
  • the piezoelectric film is a transparent piezoelectric film, and electrodes respectively disposed on the top and bottom of the piezoelectric film are transparent electrodes, and the thin film transistor is a photosensitive thin film transistor.
  • the use of a photosensitive thin film transistor enables the device to have a light enhancement effect, that is, an increase in output current under illumination, thereby improving the energy collection efficiency of the device.
  • the thin film transistor is an amorphous silicon thin film transistor, a polycrystalline silicon thin film transistor or an organic semiconductor thin film transistor; and the piezoelectric thin film is a PVDF piezoelectric plastic film.
  • the present invention also provides a light-enhanced vibration energy harvesting array comprising a plurality of light-enhanced vibration energy harvesting devices, the plurality of light-enhanced vibration energy harvesting devices being arranged in an array, the adjacent vibration energy collecting The devices are connected by metal and connected to the bus.
  • the light-enhanced vibration energy harvesting device is one of the aforementioned light-enhanced vibration energy harvesting devices.
  • the light-enhanced vibration energy harvesting array of the present invention collects energy through the piezoelectric unit in the device, and the thin film transistor rectifies and converts the pressure into a direct current output, thereby realizing the energy collecting and rectifying functions.
  • the light-enhanced vibration energy harvesting array of the invention has simple preparation process, is favorable for low-cost large-area preparation, and can meet the requirements of wearable electronics.
  • the metal is coupled to a current output pole of the light-enhanced vibration energy harvesting device.
  • Figure 1 is a schematic view showing the structure of a light-enhanced vibration energy harvesting device of the present invention.
  • FIG. 2 is a schematic diagram of an equivalent circuit of the vibration energy harvesting device of the present invention.
  • FIG. 3 is a schematic view showing the structure of a light-enhanced vibration energy harvesting array of the present invention.
  • FIG. 4 is a schematic diagram showing the preparation process of a light-enhanced vibration energy harvesting array.
  • Figure 5 is a graph of the voltage generated by the device of the present invention for finger bending.
  • Figure 6 is a graph showing changes in peak power density due to bending of a piezoelectric film of the device of the present invention as a function of bending angle.
  • Figure 7 is a graph showing the change in voltage across the load of the device with or without illumination.
  • Figure 8 is a graph showing the voltage variation across the load of the device at different illumination intensities.
  • FIG. 1 is a schematic structural view of a light-enhanced vibration energy harvesting device of the present invention.
  • the light-enhanced vibration energy harvesting device includes a thin film transistor, a piezoelectric unit, an energy storage unit, and a load.
  • the thin film transistor and the piezoelectric unit are bonded by an anisotropic conductive film.
  • the piezoelectric unit is used to collect energy, the thin film transistor is rectified, and the pressure is converted into a direct current output, thereby realizing energy harvesting and rectifying functions.
  • the basic structure of the thin film transistor includes a substrate, a bottom gate, a bottom dielectric layer, a channel, and a top dielectric layer which are stacked from bottom to top. A source and a drain are disposed on both sides of the channel.
  • the energy storage unit and the load are respectively connected to a source of the thin film transistor.
  • the energy storage unit is a super capacitor.
  • the thin film transistor includes a substrate 11, a bottom gate 12 on the upper portion of the substrate 11, a bottom dielectric layer 13 on the upper portion of the bottom gate 12, and a channel 14 on the upper portion of the bottom dielectric layer 13.
  • the source 15 and the drain 16 are respectively located on both sides of the channel 14, and the top dielectric layer 17 and the top gate are located on the upper portion of the channel 14, the source 15 and the drain 16.
  • the piezoelectric unit includes a piezoelectric film 21 and electrodes 22, 23 which are respectively laminated on the top and bottom of the piezoelectric film 21.
  • the piezoelectric film 21 is a transparent piezoelectric film
  • the electrodes 22 and 23 are transparent conductive materials.
  • the transparent electrode allows light to pass smoothly and reaches the thin film transistor, which receives illumination to enhance the output current.
  • the bottom electrode 23 of the piezoelectric unit and the top dielectric layer 17 of the thin film transistor are correspondingly bonded by an anisotropic conductive film, so that the piezoelectric unit generates a charge under pressure as a top gate of the thin film transistor. .
  • the bottom electrode of the piezoelectric unit can also be directly fabricated with the top of the thin film transistor.
  • the drain electrode 16 and the bottom gate electrode 12 of the thin film transistor are connected to the bottom electrode 23 of the piezoelectric unit, and the piezoelectric film 21 generates a charge under pressure to act on the top gate, the bottom gate 12 and the drain of the thin film transistor. 16, the transistor produces a current output, and can only be unidirectional, achieving the function of rectification.
  • the thin film transistor is a light sensitive amorphous silicon thin film transistor or an organic semiconductor thin film transistor, specifically an amorphous silicon double gate thin film transistor.
  • the piezoelectric film 21 is a PVDF piezoelectric plastic film.
  • the piezoelectric unit Under the action of pressure, the piezoelectric unit generates a voltage, which acts on the source S, the gate and the drain D of the thin film transistor.
  • the thin film transistor When the three electrodes are connected, the thin film transistor is equivalent.
  • the rectification function is realized, and the internal resistance of the thin film transistor is reduced in illumination Low, increasing the output of the current.
  • FIG. 3 is a schematic structural diagram of a light-enhanced vibration energy harvesting array of the present invention.
  • the light-enhanced vibration energy harvesting array includes a plurality of light-enhanced vibration energy harvesting devices 10, the plurality of light-enhanced vibrations.
  • the energy harvesting devices 10 are arranged in an array, and the adjacent vibrational energy harvesting devices 10 are connected by a metal 20 and connected to the bus 30, thereby reducing the size of the connection resistance.
  • the metal is coupled to a current output pole of the light enhanced vibration energy harvesting device. In this embodiment, the current output is extremely the source of the thin film transistor.
  • the light-enhanced vibration energy harvesting array of the invention collects energy through the piezoelectric unit in the device, rectifies the thin film transistor, converts the pressure into a direct current output, and realizes the energy collecting and rectifying functions.
  • the light-enhanced vibration energy harvesting array of the invention has simple preparation process, is favorable for low-cost large-area preparation, and can meet the requirements of wearable electronics.
  • FIG. 4 is a schematic diagram of a preparation process of a light-enhanced vibration energy harvesting array.
  • the method for preparing the light-enhanced vibration energy harvesting array includes the following steps:
  • anisotropic conductive adhesive film is in contact with the metal electrode under a certain temperature and pressure, so that the thin film transistor and the electrode of the piezoelectric unit are turned on in the vertical direction, and the adjacent thin film transistor and the piezoelectric The electrodes of the unit remain insulated in parallel.
  • the piezoelectric film 21 of the piezoelectric unit generates a charge gate to form a top gate of the thin film transistor, and the drain electrode 16 and the bottom gate electrode 12 of the thin film transistor are connected to the bottom electrode 23 of the piezoelectric unit, and the piezoelectric film 21 is Under the action of the pressure, charge is formed on the top gate, the bottom gate 12 and the drain 16 of the thin film transistor, and a current output is generated, and only a single conduction can be performed, thereby realizing the rectification function. Due to the use of the three-dimensional channel structure, the light absorption capability of the channel is enhanced, and under the action of light, the internal resistance of the channel 14 is greatly reduced, and the output current is increased, thereby realizing the effect of light enhancement.
  • the light-enhanced vibration energy harvesting device is attached to the finger to test the voltage generated by the bending of the finger.
  • FIG. 5 is a voltage generated by the device of the present invention for finger bending.
  • the finger bends to produce a unipolar voltage output, indicating that the current is rectified and passed through the load resistor.
  • FIG. 6 which is a graph showing the peak power density caused by the bending of the piezoelectric film of the device of the present invention as a function of the bending angle, and the rate of change of the peak power density increases gradually as the bending angle increases.
  • the device is negative in the presence/absence of light.
  • the voltage at both ends is tested.
  • FIG. 7 is a variation of the voltage across the load of the device with or without illumination. It can be seen from the figure that under the condition of illumination, the voltage across the load increases significantly, indicating that the device is enhanced in output under the action of light.
  • FIG. 8 which is a variation of the voltage across the load of the device under different illumination intensities. As can be seen from the figure, as the light intensity increases, the voltage across the load increases significantly, indicating that the device's output increases as the light intensity increases.
  • the light-enhanced vibration energy harvesting device of the present invention utilizes a piezoelectric unit to collect energy, a thin film transistor rectifies, converts pressure into a direct current output, and the device has a light enhancement effect, that is, a light effect.
  • the output current is increased to increase the energy harvesting efficiency of the device.
  • the preparation process is simple, and the energy harvesting array is prepared at a low cost and large area to meet the requirements of the wearable electron.

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  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明公开了一种光增强的振动能量采集器件和阵列，所述光增强的振动能量采集器件，包括薄膜晶体管和压电单元，所述压电单元作为薄膜晶体管的顶栅极与薄膜晶体管的顶部接触。所述压电薄膜为透明压电薄膜，设于压电薄膜顶部和底部的电极均为透明导电材料，所述薄膜晶体管为光敏薄膜晶体管。相对于现有技术，本发明的光增强的振动能量采集器件利用压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，实现能量采集与整流功能于一体。采用光敏薄膜晶体管，使得所述器件具有光增强作用，即在光照作用下，输出电流增大，提高所述器件的能量采集效率。

Description

一种光增强的振动能量采集器件和阵列 技术领域
本发明涉及能量收集领域，尤其涉及一种光增强的振动能量采集器件和阵列。
背景技术
可穿戴电子的出现将彻底改变人类的生活方式。然而，供电问题是制约其发展和广泛应用的主要瓶颈。目前电池为可穿戴电子器件的主要供电方式。电池寿命有限，需要定期更换或充电，这样不仅增加了成本，而且也极为不方便。人们正在积极发展各种“节流”技术如低功耗(微瓦甚至纳瓦级)集成电路的同时，也迫切需要寻找各种“开源”的方式(如从环境中获取能量)以摆脱对电池的依赖。
光伏发电、温差发电、射频能量传输和压电采能是目前研究比较集中的几种环境能量采集技术。这几种技术分别将环境中的光能、热能、电磁能和机械能转化为电能。这些技术各有优缺点，比如光伏技术比较成熟且能量密度比较大，但是具有时变和空间局限性。温差发电虽然结构简单坚固耐用，但是它很不容易微型化和集成化。借助射频发射器发出的电磁波进行传输的能量一般密度较低，且传输距离十分有限。压电采能具有结构简单、能量密度高、寿命长、无电磁干扰且易于微型化和集成化等优点，正在受到越来越多的关注，被认为是最有希望代替电池的技术。因此，近年来，基于压电效应的能量采集成为一个研究热点。由于压电效应产生的是交流电压信号，通常需要整流电路进行匹配方可实现直流电的输出，因此，现有的压电能量采集技术还需要进一步包括对能量的转化、存储和电源管理等环节。
发明内容
本发明的目的在于克服现有技术中的缺点和不足，提供一种将压电薄膜器件与光敏薄膜晶体管集成形成光增强的压电门控薄膜晶体管，实现能量采集与整流功能于一体的光增强的振动能量采集器件，并以此为基础形成能量采集阵列。
本发明是通过以下技术方案实现的：一种光增强的振动能量采集器件，包括薄膜晶体管和压电单元，所述压电单元作为薄膜晶体管的顶栅极与薄膜晶体管的顶部接触。
相对于现有技术，本发明的光增强的振动能量采集器件利用压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，实现能量采集与整流功能于一体。
进一步，所述薄膜晶体管包括衬底，位于衬底上部的底栅极，位于底栅极上部的底部介电层，位于底部介电层上部的沟道，分别位于沟道两侧的源极和漏极，以及位于沟道、源极 和漏极上部的顶部介电层。
进一步，所述光增强的振动能量采集器件还包括能量存储单元和负载，所述能量存储单元和负载分别与所述薄膜晶体管的源极相连接。
进一步，所述压电单元包括压电薄膜和分别层设于压电薄膜顶部和底部的电极，所述压电单元的底部电极与薄膜晶体管的顶部贴合或者直接制备于薄膜晶体管顶部。
进一步，所述压电单元的底部电极与薄膜晶体管的顶部介电层通过异方性导电胶膜贴合或者所述压电单元制备于薄膜晶体管的顶部。
进一步，所述薄膜晶体管的漏极、底栅极和压电单元的底部电极相连接。
进一步，所述压电薄膜为透明压电薄膜，分别层设于压电薄膜顶部和底部的电极均为透明电极，所述薄膜晶体管为光敏薄膜晶体管。采用光敏薄膜晶体管，使得所述器件具有光增强作用，即在光照作用下，输出电流增大，提高所述器件的能量采集效率。
进一步，所述薄膜晶体管为非晶硅薄膜晶体管、多晶硅薄膜晶体管或有机半导体薄膜晶体管；，所述压电薄膜为PVDF压电塑料薄膜。
本发明还提供了一种光增强的振动能量采集阵列，包括若干个光增强的振动能量采集器件，所述多个光增强的振动能量采集器件按阵列方式排布，所述相邻振动能量采集器件之间通过金属连接并连接至总线。所述光增强的振动能量采集器件为前述的其中之一种所述光增强的振动能量采集器件。
相对于现有技术，本发明的光增强的振动能量采集阵列，通过器件中的压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，实现能量采集与整流功能于一体。此外，本发明的光增强的振动能量采集阵列，制备工艺简单，有利于低成本大面积制备，可以满足可穿戴电子的要求。
进一步，所述金属连接于所述光增强的振动能量采集器件的电流输出极。
为了更好地理解和实施，下面结合附图详细说明本发明。
附图说明
图1是本发明的光增强的振动能量采集器件的结构示意图。
图2是本发明的振动能量采集器件的等效电路示意图。
图3是本发明的光增强的振动能量采集阵列的结构示意图。
图4是光增强的振动能量采集阵列的制备流程示意图。
图5是本发明的器件用于手指弯曲产生的电压。
图6是本发明的器件的压电薄膜弯曲产生的峰值功率密度随弯曲角度的变化。
图7是所述器件在有/无光照条件下负载两端电压的变化。
图8是所述器件在不同光照强度下负载两端电压的变化。
具体实施方式
请参阅图1，其是本发明的光增强的振动能量采集器件的结构示意图。所述光增强的振动能量采集器件包括薄膜晶体管、压电单元、能量存储单元和负载。所述薄膜晶体管和压电单元通过异方性导电胶膜贴合。利用压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，实现能量采集与整流功能于一体。所述薄膜晶体管的基础结构包括由下至上层叠设置的衬底、底栅极、底部介电层、沟道和顶部介电层。所述沟道两侧设置有源极和漏极。所述能量存储单元和负载分别与薄膜晶体管的源极连接。在本实施例中，所述能量存储单元为超级电容器。
在本实施例中，所述薄膜晶体管包括衬底11，位于衬底11上部的底栅极12，位于底栅极12上部的底部介电层13，位于底部介电层13上部的沟道14，分别位于沟道14两侧的源极15和漏极16，以及位于沟道14、源极15和漏极16上部的顶部介电层17和顶栅极。
所述压电单元包括压电薄膜21和分别层设于压电薄膜21顶部和底部的电极22、23。在本实施例中，所述压电薄膜21为透明压电薄膜，所述电极22、23为透明导电材料。透明的电极使得光线能够顺利通过并到达薄膜晶体管，薄膜晶体管接收光照使输出电流增强。
所述压电单元的底部电极23与所述薄膜晶体管的顶部介电层17通过异方性导电胶膜对应贴合，使得所述压电单元在压力作用下产生电荷作为薄膜晶体管的顶栅极。所述压电单元的底部电极也可以直接制备与薄膜晶体管的顶部。所述薄膜晶体管的漏极16、底栅极12和压电单元的底部电极23相连接，压电薄膜21在压力作用下产生电荷作用于薄膜晶体管的顶栅极、底栅极12和漏极16，晶体管产生电流输出，而且仅能单向导通，实现了整流的功能。
在本实施例中，所述薄膜晶体管为对光敏感的非晶硅薄膜晶体管或者有机半导体薄膜晶体管，具体的为非晶硅双栅极薄膜晶体管。所述压电薄膜21为PVDF压电塑料薄膜。
请参阅图2，其是本发明的振动能量采集器件的等效电路示意图。所述等效电路中包括压电单元形成的脉冲电源S1、电容C1、薄膜晶体管Q1和电阻负载R。所述脉冲电源S1与电容C1并联连接，所述脉冲电源S1一端接地。所述脉冲电源S1另一端连接于薄膜晶体管Q1的漏极D和底部栅极G。所述薄膜晶体管Q1的源极S连接于电阻负载R，电阻负载R的另一端连接于脉冲电源S1接地的一端。所述电容C1为压电单元自身电容，在压力作用下，压电单元产生电压，作用于薄膜晶体管的源极S、栅极和漏极D，当将此三个电极相连时，薄膜晶体管相当于一个整流二极管，实现整流功能，并且薄膜晶体管的内阻在光照作用下降 低，提高了电流的输出。
请参阅图3，其是本发明的光增强的振动能量采集阵列的结构示意图，所述光增强的振动能量采集阵列包括若干个光增强的振动能量采集器件10，所述多个光增强的振动能量采集器件10按阵列方式排布，所述相邻振动能量采集器件10之间通过金属20连接并连接至总线30，从而降低连接电阻的大小。所述金属连接于所述光增强的振动能量采集器件的电流输出极。在本实施例中，所述电流输出极为薄膜晶体管的源极。本发明的光增强的振动能量采集阵列，通过器件中的压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，实现能量采集与整流功能于一体。此外，本发明的光增强的振动能量采集阵列，制备工艺简单，有利于低成本大面积制备，可以满足可穿戴电子的要求。
请参阅图4，其是光增强的振动能量采集阵列的制备流程示意图，所述光增强的振动能量采集阵列的制备方法包括以下步骤：
(1)将多个薄膜晶体管按照阵列排布形成薄膜晶体管阵列；
(2)将异方性导电胶膜贴合于薄膜晶体管阵列上；
(3)将多个压电单元与薄膜晶体管相对应按照阵列排布形成压电单元阵列；
(4)将压电单元阵列与薄膜晶体管阵列电极进行对准，然后贴合，得到光增强的振动能量采集阵列。
其中，所述异方性导电胶膜在一定温度和压力下，其中的导电粒子与金属电极接触使得薄膜晶体管和压电单元的电极在垂直方向上导通，而相邻的薄膜晶体管和压电单元的电极在平行方向上保持绝缘。
以下简要说明本发明的光增强的振动能量采集器件的工作过程和原理：
所述压电单元的压电薄膜21在压力作用下产生电荷形成薄膜晶体管的顶栅极，薄膜晶体管的漏极16、底栅极12和压电单元的底部电极23相连，压电薄膜21在压力作用下产生电荷形成对薄膜晶体管的顶栅极、底栅极12和漏极16，产生电流输出，而且仅能单向导通，从而实现了整流的功能。由于采用了三维沟道结构，沟道的光吸收能力增强，在光的作用下，沟道14的内阻大大降低，输出电流将增加，从而实现了光增强的效果。
将所述光增强的振动能量采集器件贴合于手指上，对手指弯曲所产生的电压进行测试。请参阅图5，其是本发明的器件用于手指弯曲产生的电压。从图中可知，所述器件在贴合于手指后，手指弯曲产生了单极性电压输出，说明电流是整流以后经过负载电阻。请参阅图6，其是本发明的器件的压电薄膜弯曲产生的峰值功率密度随弯曲角度的变化，随弯曲角度的增加，所述峰值功率密度增加变化率逐渐加大。
为证实本发明的振动能量采集器件确有光增强的作用，对所述器件在有/无光照条件下负 载两端电压进行测试。请参阅图7，其是所述器件在有/无光照条件下负载两端电压的变化。从图中可知，在有光照的条件下，负载两端电压显著增加，说明所述器件在光的作用下输出增强。请参阅图8，其是所述器件在不同光照强度下负载两端电压的变化。从图中可知，随着光照强度的增加，负载两端电压显著增加，说明所述器件随着光照强度的增强，器件的输出增强。
相对于现有技术，本发明的光增强的振动能量采集器件利用压电单元对能量进行采集，薄膜晶体管进行整流，将压力转化为直流电输出，并且所述器件具有光增强作用，即在光照作用下，输出电流增大，提高所述器件的能量采集效率。制备工艺简单，有利于低成本大面积制备能量采集阵列以满足可穿戴电子的要求。
本发明并不局限于上述实施方式，如果对本发明的各种改动或变形不脱离本发明的精神和范围，倘若这些改动和变形属于本发明的权利要求和等同技术范围之内，则本发明也意图包含这些改动和变形。

Claims (10)

  1. 一种光增强的振动能量采集器件，其特征在于：包括薄膜晶体管和压电单元，所述压电单元作为薄膜晶体管的顶栅极与薄膜晶体管的顶部接触。
  2. 根据权利要求1所述的光增强的振动能量采集器件，其特征在于：所述薄膜晶体管包括衬底，位于衬底上部的底栅极，位于底栅极上部的底部介电层，位于底部介电层上部的沟道，分别位于沟道两侧的源极和漏极，以及位于沟道、源极和漏极上部的顶部介电层。
  3. 根据权利要求2所述的光增强的振动能量采集器件，其特征在于：所述光增强的振动能量采集器件还包括能量存储单元和负载，所述能量存储单元和负载分别与所述薄膜晶体管的源极相连接。
  4. 根据权利要求2所述的光增强的振动能量采集器件，其特征在于：所述压电单元包括压电薄膜和分别层设于压电薄膜顶部和底部的电极，所述压电单元的底部电极与薄膜晶体管的顶部贴合或者直接制备于薄膜晶体管顶部。
  5. 根据权利要求4所述的光增强的振动能量采集器件，其特征在于：所述压电单元的底部电极与薄膜晶体管的顶部介电层通过异方性导电胶膜贴合或者所述压电单元制备于薄膜晶体管的顶部。
  6. 根据权利要求4所述的光增强的振动能量采集器件，其特征在于：所述薄膜晶体管的漏极、底栅极和压电单元的底部电极相连接。
  7. 根据权利要求4所述的光增强的振动能量采集器件，其特征在于：所述压电薄膜为透明压电薄膜，分别层设于压电薄膜顶部和底部的电极均为透明电极，所述薄膜晶体管为光敏薄膜晶体管。
  8. 根据权利要求1所述的光增强的振动能量采集器件，其特征在于：所述薄膜晶体管为非晶硅薄膜晶体管、多晶硅薄膜晶体管或有机半导体薄膜晶体管；所述压电薄膜为PVDF压电塑料薄膜。
  9. 一种光增强的振动能量采集阵列，其特征在于：包括若干个权利要求1-8中其中之一所述的光增强的振动能量采集器件，所述多个光增强的振动能量采集器件按阵列方式排布，所述相邻振动能量采集器件之间通过金属连接并连接至总线。
  10. 根据权利要求9所述的光增强的振动能量采集阵列，其特征在于：所述金属连接于所述光增强的振动能量采集器件的电流输出极。
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