WO2017217672A1

WO2017217672A1 - Semiconductor light emitting device and manufacturing method therefor

Info

Publication number: WO2017217672A1
Application number: PCT/KR2017/005511
Authority: WO
Inventors: 김경민; 정겨울; 조영관; 한정우
Original assignee: 주식회사 세미콘라이트
Priority date: 2016-06-13
Filing date: 2017-05-26
Publication date: 2017-12-21

Abstract

Disclosed are a semiconductor light emitting device and a manufacturing method therefor, the semiconductor light emitting device comprising: a semiconductor light emitting device chip comprising a plurality of semiconductor layers, which includes an active layer for generating light by a recombination of electrons and holes, and an electrode electrically connected to the plurality of semiconductor layers; a first encapsulant positioned on the semiconductor light emitting device chip; a second encapsulant positioned on a side surface of the semiconductor light emitting device chip and below the first encapsulant; and a third encapsulant positioned on the side surface of the semiconductor light emitting device chip and below the second encapsulant.

Description

Semiconductor light emitting device and manufacturing method thereof

The present disclosure generally relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a semiconductor light emitting device of a chip scale package (CSP) type and a method of manufacturing the same.

This section provides background information related to the present disclosure which is not necessarily prior art. In addition, in the present specification, direction indications such as up / down, up / down, etc. are based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip may include a growth substrate 10 (eg, a sapphire substrate), a growth layer 10, a buffer layer 20, a first semiconductor layer 30 having a first conductivity (eg, an n-type GaN layer), and electrons. The active layer 40 (eg, INGaN / (In) GaN MQWs) that generates light through recombination of holes, and the second semiconductor layer 50 (eg, p-type GaN layer) having a second conductivity different from the first conductivity are sequentially And a transmissive conductive film 60 for spreading current and an electrode 70 serving as a bonding pad, and serving as a bonding pad on the etched and exposed first semiconductor layer 30. An electrode 80, for example, a Cr / Ni / Au laminated metal pad, is formed. The semiconductor light emitting device of the form as shown in FIG. 1 is particularly called a lateral chip. Here, when the growth substrate 10 side is electrically connected to the outside becomes a mounting surface.

2 is a view showing another example of the semiconductor light emitting device chip disclosed in US Patent No. 7,262,436. For convenience of description, reference numerals have been changed.

The semiconductor light emitting device chip may include a growth substrate 10 and a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 that generates light through recombination of electrons and holes, and a first conductivity. The second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 is sequentially deposited, and three

electrode layers

90, 91, 92 are formed on the growth substrate 10 to reflect light. have. The first electrode film 90 may be an Ag reflecting film, the second electrode film 91 may be a Ni diffusion barrier film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 serving as a bonding pad is formed on the etched and exposed first semiconductor layer 30. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. A semiconductor light emitting device chip of the same type as that of FIG. 2 is particularly referred to as a flip chip. In the flip chip illustrated in FIG. 2, the electrode 80 formed on the first semiconductor layer 30 is at a lower level than the

electrode films

90, 91, and 92 formed on the second semiconductor layer, but may be formed at the same height. You can also do that. The height reference may be the height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 includes a vertical semiconductor light emitting chip 150 in the

lead frames

110 and 120, the mold 130, and the cavity 140, and the cavity 140. Is filled with the encapsulant 170 containing the wavelength converting member 160. The lower surface of the vertical semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110, and the upper surface is electrically connected to the lead frame 120 by the wire 180. A portion of the light emitted from the vertical semiconductor light emitting device chip 150 may excite the wavelength conversion material 160 to produce light of different colors, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 may generate blue light, and light generated by being excited by the wavelength converting material 160 may be yellow light, and blue light and yellow light may be mixed to produce white light. 3 illustrates a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but a semiconductor light emitting device having a shape similar to that of FIG. 3 may be manufactured using the semiconductor light emitting device chips illustrated in FIGS. 1 and 2. have.

A semiconductor light emitting device of the type described in FIG. 3 is generally called a semiconductor light emitting device of a package type, and a semiconductor light emitting device having a semiconductor light emitting device chip size is called a semiconductor light emitting device of a chip scale package (CSP) type. Related to the CSP type semiconductor light emitting device is disclosed in Korean Patent Laid-Open No. 2014-0127457. Recently, as the size of the semiconductor light emitting device is reduced, development of a CSP type semiconductor light emitting device has been actively performed, and the present disclosure is characterized by improving light extraction efficiency in the CSP type semiconductor light emitting device.

This will be described later in the section on Embodiments of the Invention.

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a semiconductor light emitting device chip; a plurality of semiconductors including an active layer that generates light by recombination of electrons and holes A semiconductor light emitting device chip having a layer and an electrode electrically connected to the plurality of semiconductor layers; A first encapsulation material positioned on the semiconductor light emitting device chip; A second encapsulant positioned on a side of the semiconductor light emitting device chip and under the first encapsulant; And a third encapsulation material positioned on a side surface of the semiconductor light emitting device chip and under the second encapsulation material.

According to another aspect of the present disclosure (According to another aspect of the present disclosure), a method of manufacturing a semiconductor light emitting device, the method comprising: preparing a first encapsulant; Placing a plurality of semiconductor light emitting device chips on the first encapsulation material; placing a plurality of semiconductor light emitting device chips on the first encapsulation material such that an active layer of the semiconductor light emitting device chip is positioned between the first encapsulation material and an electrode of the semiconductor light emitting device chip. Laying step; Forming a second encapsulant having a convex portion downward between the semiconductor light emitting device chip and the semiconductor light emitting device chip; Forming a third encapsulant on the convex portion formed in the second encapsulant; And cutting a semiconductor light emitting device chip between the semiconductor light emitting device chip and the semiconductor light emitting device chip.

According to an aspect according to the present disclosure, in a semiconductor light emitting device, a semiconductor light emitting device chip; a plurality of semiconductors including an active layer for generating light by recombination of electrons and holes A semiconductor light emitting device chip having a layer and an electrode electrically connected to the plurality of semiconductor layers; A first encapsulating material positioned on the semiconductor light emitting device chip; a first encapsulating material including a cavity surrounded by the first encapsulating material with a top surface of the first encapsulating material convex downward; And a translucent second encapsulant formed in the cavity of the first encapsulant; a second encapsulant having an upper surface of the second encapsulant convex upward.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed by each opening of the mask; Forming a first encapsulant in each opening by using the mask as a dam; the material forming the first encapsulant climbs up the inner surface of the mask forming the opening, and the upper surface of the first encapsulant is lowered. Forming a first encapsulant to be convex to form a cavity surrounded by the first encapsulant; And forming a second encapsulation material having a top surface convex in a cavity surrounded by the first encapsulation material. A method of manufacturing a semiconductor light emitting device is provided.

According to an aspect according to the present disclosure, in a semiconductor light emitting device, a semiconductor light emitting device chip; a plurality of semiconductors including an active layer for generating light by recombination of electrons and holes A semiconductor light emitting device chip having a layer and an electrode electrically connected to the plurality of semiconductor layers; A first encapsulation material positioned on the semiconductor light emitting device chip; a first encapsulation material including a cavity surrounded by the first encapsulation material with a top surface of the first encapsulation material convex downward; And a second encapsulation material formed in a cavity of the first encapsulation material and reflecting light emitted from the semiconductor light emitting device chip.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed by each opening of the mask; Forming a first encapsulant in each opening by using the mask as a dam; as a material forming the first encapsulant rises up the inner surface of the mask, the upper surface of the first encapsulant is convex downward, thereby forming a first encapsulant. Forming a first encapsulant to form a cavity surrounded by the encapsulant; And forming a second encapsulation material that reflects light in a cavity surrounded by the first encapsulation material.

This will be described later in the section on Embodiments of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip;

2 is a view showing another example of the semiconductor light emitting device chip shown in US Patent No. 7,262,436;

3 is a view showing an example of a conventional semiconductor light emitting device;

4 illustrates an example of a semiconductor light emitting device according to the present disclosure;

5 is a view illustrating various embodiments of a semiconductor light emitting device according to the present disclosure;

6 is a view showing the advantages of the semiconductor light emitting device according to the present disclosure;

7 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

8 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

9 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

10 to 14 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

15 is a view for explaining examples of a form in which a material forming an encapsulant is supplied to an opening and cured in a method of manufacturing a semiconductor light emitting device according to the present disclosure;

16 is a view for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure;

17 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

18 illustrates an example of a semiconductor light emitting device according to the present disclosure;

19 is a view illustrating an effect of the top surface of the first encapsulant being convex downward in the semiconductor light emitting device according to the present disclosure;

20 is a view showing an example of a method of manufacturing a semiconductor light emitting device disclosed in FIG. 18;

21 is a view illustrating various embodiments of a semiconductor light emitting device disclosed in FIG. 18;

22 illustrates an example of a semiconductor light emitting device according to the present disclosure;

23 is a view showing an application example of the semiconductor light emitting device disclosed in FIG. 22;

24 is a view illustrating an example of a method of manufacturing a semiconductor light emitting device disclosed in FIG. 22;

25 is a view illustrating various embodiments of a semiconductor light emitting device disclosed in FIG. 22;

FIG. 26 is a view illustrating an effect according to the degree of convex upper surface of a first encapsulant in a semiconductor light emitting device according to the present disclosure; FIG.

27 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

28 is a view showing a light emitting experimental example according to the planar shape of the semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

4 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 200 includes a semiconductor light emitting device chip including a plurality of semiconductor layers including an active layer 211 that generates light by recombination of electrons and holes, and an electrode 212 electrically connected to the plurality of semiconductor layers. 210, a first encapsulation member 220 disposed on the semiconductor light emitting device chip 210, a side encapsulation 213 of the semiconductor light emitting device chip 210, and a second encapsulation material disposed under the first encapsulation material 220. And a third encapsulation member 240 positioned under the side surface 213 and the second encapsulation member 230 of the semiconductor light emitting device chip 210. The semiconductor light emitting device chip 210 is preferably a flip chip in which the electrode 212 is positioned below the semiconductor light emitting device chip 210, and the electrode 212 is exposed in the direction of the third encapsulant 250. The active layer 211 is exaggerated for clarity, and the actual active layer is a few um thick and is formed near the electrode 212. The first encapsulant 220 may be formed by applying a light-transmitting material including a wavelength conversion material made of at least one of YAG, Silicate, and Nitride, and details thereof will be described with reference to FIG. 7. The light transmissive material may be at least one of an epoxy resin and a silicone resin. Alternatively, the first encapsulant 220 may be formed of a sheet including a wavelength converting material. The sheet containing the wavelength converting material is generally known as a phosphor sheet. The second encapsulant 230 may be formed of one of a light transmissive material including a light transmissive material and a wavelength converting material. The light transmissive material may be at least one of an epoxy resin and a silicone resin. The second encapsulant 230 may act as an adhesive when there is no adhesive for fixing the semiconductor light emitting device chip 210 to the first encapsulant 220. The third encapsulant 240 may be formed of a colored reflective material. For example, it may be formed of a white silicone resin. The third encapsulant 240 reflects the light 260 emitted from the side surface 213 of the semiconductor light emitting device chip 210 to exit the light 260 upward. The interface 250 between the second encapsulant 230 and the third encapsulant 240 forms a curve, in particular a convex upward curve. Advantages of the present disclosure are described in FIG. 6.

5 is a view illustrating various embodiments of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device may have a semiconductor light emitting device having various structures as shown in FIGS. 5 (a) to 5 (b) as well as the structure of FIG. 4. For example, as shown in the semiconductor light emitting device 300 of FIG. 5A, the shortest distance 331 between the third encapsulation member 340 and the first encapsulation member 320, the third encapsulation member 340, and the semiconductor light emitting diode are emitted. By varying the distance 341 of the portion where the side surface 311 of the device chip 310 is in contact with each other, semiconductor light emitting devices having various structures, such as the semiconductor

light emitting devices

200 and 400 of FIGS. 4 and 5 (b), may be possible. For example, in the semiconductor semiconductor light emitting device 200 of FIG. 4, the first encapsulant 220 and the third encapsulant 340 have a shortest distance between the first encapsulant 220 and the third encapsulant 240 to be zero. ) Does not generate light exiting to the side surface of the semiconductor light emitting device 200, but the shortest distance between the first encapsulant 420 and the third encapsulant 440 is greater than 0 as shown in FIG. In the case where the semiconductor light emitting device 400 is formed to be large, when the planar shape of the semiconductor light emitting device 400 is a quadrangle, a five-side light emitting semiconductor light emitting device 400 may be obtained in which light is extracted to the upper surface and four side surfaces of the semiconductor light emitting device 400. As the shortest distance between the first encapsulation material 420 and the third encapsulation material 440 is increased, light extracted to the side surface of the semiconductor light emitting device 400 may increase. In the case of the five-side light emitting semiconductor light emitting device 400, the second encapsulation material 430 preferably includes a wavelength conversion material. However, it is preferable that there is no

second encapsulant

230, 330, or 430 between the

third encapsulant

240, 340, 440 and the side surfaces 213, 311, 411 of the semiconductor light emitting

device chip

210, 310, 410. The reason will be described in FIG. 6.

6 is a view showing the advantages of the semiconductor light emitting device according to the present disclosure.

The third encapsulant 240 of the semiconductor light emitting device 200 reflects the light 260 emitted from the side surface 213 of the semiconductor light emitting device chip 210 to exit the light 260 upward. In particular, the light 260 emitted from the side surface 213 of the semiconductor light emitting device chip 210 is prevented from exiting toward the electrode of the semiconductor light emitting device chip 210 and the light is widened upward due to the convex interface 250. Can spread out. The light extraction efficiency toward the upper direction of the semiconductor light emitting device is improved. For example, when the second encapsulant 530 is positioned between the side surface 511 of the semiconductor light emitting device chip 510 and the third encapsulant 540 in the semiconductor light emitting device 500 as illustrated in FIG. 6B. Some of the light emitted from the side surface 511 of the semiconductor light emitting device chip 510 550 may be inefficient toward the light emitted outward toward the electrode 512 of the semiconductor light emitting device chip 510. Furthermore, in the semiconductor light emitting device 600 as shown in FIG. 6C, the second encapsulation material 630 functions only as an adhesive for fixing the semiconductor light emitting device chip 610 to the first encapsulation material 620, and the third encapsulation material. When not formed between the 640 and the semiconductor light emitting device chip 610, most of the light emitted from the side surface 611 of the semiconductor light emitting device chip 610 is reflected by the third encapsulant 640 and moved upward. Although extracted, there was a problem that a lot of losses caused by the third encapsulant 640 occur. Advantages of the semiconductor light emitting device have been described with the semiconductor light emitting device 200 shown in FIG. 4, but other

various embodiments

300 and 400 have the same advantages.

7 is a view illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, prepare a first encapsulant 700 (S1). The first encapsulant 700 is a sheet containing a wavelength converting material. Although not shown, when the first encapsulation material is formed of a light transmissive material including a wavelength conversion material composed of at least one of YAG, Silicate, and Nitride, the first encapsulation material is applied by curing the light transmissive material including the wavelength conversion material on a substrate. You can prepare. Thereafter, a plurality of semiconductor light emitting device chips 710 are placed on the first encapsulant 600 (S2). In the method of placing the plurality of semiconductor light emitting device chips 710 on the first encapsulation material 700, the active layer 611 of the semiconductor light emitting device chip 710 is formed of the first encapsulation material 700 and the semiconductor light emitting device chip 710. A plurality of semiconductor light emitting device chips 710 are placed on the first encapsulant 700 so as to be positioned between the electrodes 712. Although not shown, an adhesive layer may be provided between the first encapsulant 700 and the semiconductor light emitting device chip 710 in order to fix the semiconductor light emitting device chip 710 without moving on the first encapsulation material 700. Thereafter, a second encapsulant 720 is formed between the semiconductor light emitting device chip 710 and the semiconductor light emitting device chip 710 (S3). When the second encapsulant 720 is formed between the semiconductor light emitting device chip 710 and the semiconductor light emitting device chip 710, a material for forming the second encapsulant 720 in a liquid state may be the semiconductor light emitting device chip 610. ) And the semiconductor light emitting device chip 710. The material forming the second encapsulant 720 in the liquid state is taken up the side surface 713 of the semiconductor light emitting device chip 710, but is not formed on the semiconductor light emitting device chip 710 due to the surface tension. The second encapsulant 720 is in the form of a convex downward portion. Thereafter, the third encapsulation member 730 is formed in the convex portion formed on the second encapsulation member 720 (S4). Preferably, the third encapsulant 730 is formed after the second encapsulant 720 is cured. Thereafter, the semiconductor light emitting device chip 710 and the semiconductor light emitting device chip 710 are cut along the cutting line 740 (S5). According to the position of the cutting line 740 and the degree to which the second encapsulant 720 rises up the side surface 713 of the semiconductor light emitting device chip 710, various types of semiconductor light emitting devices 200 shown in FIGS. 4 and 5 may be used. 300, 400) can be made. For example, when cutting the position of the cutting line 640 by moving in the left direction, the semiconductor light emitting device 750 indicated by the dotted line has the first encapsulant 320 and the third encapsulant 340 as shown in FIG. ), The semiconductor light emitting device 300 having the shortest distance 331 between the structures of FIG. 4 or 5 (b) can be obtained.

8 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

First, prepare a first encapsulant 800 (S1). Subsequently, a material for forming the liquid second encapsulant 810 is coated on the first encapsulant 800 (S2-1). The coating thickness of the material forming the second encapsulant 810 is preferably 20 μm or less. The structure of the semiconductor light emitting device can be made various according to the coating thickness, and the characteristics according to the coating thickness will be described with reference to FIG. 9. Thereafter, the plurality of semiconductor light emitting device chips 820 are placed on the liquid second encapsulant 810 (S3-1). In the method of placing the plurality of semiconductor light emitting device chips 820 on the second encapsulation material 810, the active layer 821 of the semiconductor light emitting device chip 820 may be formed of the first encapsulant 800 and the semiconductor light emitting device chip 820. A plurality of semiconductor light emitting device chips 820 are placed on the second encapsulant 810 so as to be positioned between the electrodes 822. In particular, by pressing the semiconductor light emitting device chip 820 in the direction of the first encapsulant 800, a portion of the second encapsulant 810 between the first encapsulating material 800 and the semiconductor light emitting device chip 820 may come out from the arrow. As shown in 823, the second encapsulant 810 moves up the side of the semiconductor light emitting device chip 820 to be convex downward. However, due to the surface tension, the second encapsulant 810 does not rise above the semiconductor light emitting device chip 820. Thereafter, the third encapsulation member 830 is formed on the convex portion formed on the second encapsulation member 810 (S4). Preferably, the third encapsulant 830 is formed after the second encapsulant 810 is cured. Thereafter, the semiconductor light emitting device chip 820 and the semiconductor light emitting device chip 820 are cut along the cutting line 840 (S5). Compared to FIG. 7, the second encapsulant 810 itself serves as an adhesive for fixing the semiconductor light emitting device chip 820 to the first encapsulant 800.

9 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

FIG. 9 is a coating thickness 811 of the second encapsulant 810 when the material for forming the liquid second encapsulant 810 is coated on the first encapsulant 800 in FIG. 8. It is shown that the thickness 824 of the element chip 820 is set to 0.8 or less (S2-2). When the thickness of the coating is thick, the shortest distance 831 between the first encapsulant 800 and the third encapsulant 830 is increased, and thus the semiconductor light emitting device 400 having the structure as shown in FIG. 5 (b) can be manufactured. have. If necessary, the third encapsulant 830 may not be formed. Except as described in FIG. 9, the manufacturing method described in FIG. 9 is substantially the same as the manufacturing method described in FIG. 8.

10 to 14 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the method of manufacturing a semiconductor light emitting device, as shown in FIG. 10, first, one on the base 201 is illustrated. The mask 301 with the above opening 305 is provided. Then, as shown in Figure 12 (b), each opening 305 using the element transfer device 501 to recognize the shape, pattern, or boundary of the mask 301 and correct the position and angle to place the element. The semiconductor light emitting device chip 101 is placed on the exposed base 201. Next, as shown in FIG. 14, a material for forming the encapsulant 170 is supplied to each opening 305 using the mask 301 as a dam.

In this example, before placing the semiconductor light emitting device chip 101 on the base 201, a mask 301 is first placed on the base 201. The mask 301 may be recognized as a pattern for correcting a position or an angle at which the device transfer device 501 is to place the semiconductor light emitting device chip 101, and functions as a dam of the encapsulant 170. In this example, a flip chip is suitable as the semiconductor light emitting device chip 101, but it does not exclude a lateral chip or a vertical chip. As the flip chip device, the semiconductor light emitting device chip 101 is shown in Figs.

Hereinafter, each process will be described in detail.

As shown in FIG. 11, a mask 301 is provided on the base 201. The base 201 may be a rigid metal plate or a nonmetal plate, as shown in FIG. 11 (a), or may be a flexible film or tape, as shown in FIG. 11 (b). The metal plate is not particularly limited, and for example, Al, Cu, Ag, Cu-Al alloys, Cu-Ag alloys, Cu-Au alloys, SUS (stainless steel), and the like may be used. Of course you can use it. Plastics can be used as nonmetallic plates, and various colors and light reflectances can be selected. The film or tape is also not particularly limited and is preferably sticky or adhesive and has heat resistance. For example, heat resistant tape, blue tape, or the like may be used, and various colors or light reflectances may be selected.

Thus, according to this example, there is an advantage that the base 201 on which the semiconductor light emitting device chip 101 is arranged may not be a semiconductor substrate or another expensive substrate. In addition, since the mask 301 guides the arrangement of the semiconductor light emitting device chip 101, an additional pattern forming process is not required for the base 201. In addition, the

electrodes

80 and 70 of the semiconductor light emitting device chip 101 shown in FIG. 13 may be directly in contact with external electrodes, or the base may be used for electrical conduction, so that deposition or plating on the base 201 may be performed. Additional and additional processes, such as forming a conductive layer for electrical connection, or additionally forming an electrical contact portion connected to the

electrodes

80 and 70 of the semiconductor light emitting device chip 101 after removing the base 201, may be used. There is no need for this, which is very advantageous in terms of process and cost.

The mask 301 may be a plastic, metal, or plated member, and one or more openings 305 are formed. Examples of the material of the mask 301 may be used as examples of the material of the base, but a material that is hard to some extent is preferable to maintain the shape of the mask 301 and the opening 305, and is effective for preventing cracks and cracks. It is preferable to select as. Particularly, as will be described later, at least one of a material, a color, and a light reflectance of the mask 301 and the base 201 may be differently selected from the viewpoint of the element transfer device recognizing the pattern of the mask 301.

In this example, the base 201 and the mask 301 are pressed against each other by an external force. For example, as shown in FIG. 11A, the clamp 401 may be used to contact the base 201 and the mask 301. As described above, according to this example, the method for contacting the base 201 and the mask 301 is simple, and the clamp 401 can be removed to remove the mask 301 from the base 201. . Of course, embodiments in which an adhesive material is interposed between the base 201 and the mask 301 are also possible. For example, the adhesive material may be variously selected from conductive pastes, insulating pastes, polymer adhesives, and the like, and is not particularly limited. In some temperature ranges, a material that loses adhesion may be easily separated in the temperature range when the base 201 and the mask 301 are separated.

The one or more openings 305 formed in the mask 301 are arranged in a plurality of rows and columns, for example. The top surface of the base 201 is exposed through the opening 305. The number and arrangement of the openings 305 can be appropriately changed as necessary. The opening 305 may follow the shape of the semiconductor light emitting device chip 101, but may have a shape different from that of the semiconductor light emitting device chip 101.

FIG. 12 is a view for explaining an example of a process of placing the semiconductor light emitting device chip 101 on the base 201 exposed through the opening 305. The device conveying device 501 may include a fixing part 13; Each semiconductor light emitting device chip 101 on the top surface is picked up and placed on the base 201 exposed through the opening 305 of the mask 301. Prior to this process, a process of providing a plurality of semiconductor light emitting device chips 101 on the tape 13 may be preceded by using an element array device (eg, a sorter). As shown in Fig. 12 (a), when the pin or rod hits the semiconductor light emitting device chip 101 under the tape 13, the semiconductor light emitting device chip 101 falls from the tape 13, and at that moment, the element transfer device ( The 501 may electrically adsorb or vacuum adsorb the semiconductor light emitting device chip 101. As shown in FIG. 12B, the device transfer device 501 moves over the base 201 to place the semiconductor light emitting device chip 101 in each opening 305. The semiconductor light emitting device chip 101 is placed so that two

electrodes

80 and 70 face the upper surface of the base 201, so that the two

electrodes

80 and 70 are covered by the encapsulant 170 described later. It is not exposed from the lower surface of the sealing material 170. As an example of the element transfer device 501, any device capable of recognizing a pattern or a shape and correcting a position to be transferred or an angle of an object, similar to a die bonder, may be used regardless of its name.

FIG. 13 illustrates a flip chip having a structure different from that shown in FIG. 2 as a flip chip. The semiconductor light emitting device chip 101 includes a growth substrate 10, a plurality of semiconductor layers 30, 40, and 50, a light reflection layer R, and two

electrodes

80 and 70. As a group III nitride semiconductor light emitting device, for example, sapphire, SiC, Si, GaN and the like are mainly used as the growth substrate 10, and the growth substrate 10 may be finally removed. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a first conductivity. The second semiconductor layer 50 having another second conductivity (for example, Mg-doped GaN) is interposed between the first semiconductor layer 30 and the second semiconductor layer 50 and generates light through recombination of electrons and holes. An active layer 40 (eg, an InGaN / (In) GaN multi-quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device. The first electrode 80 is in electrical communication with the first semiconductor layer 30 to supply electrons. The second electrode 70 is in electrical communication with the second semiconductor layer 50 to supply holes.

As shown in FIG. 13A, a light reflection layer R is interposed between the second semiconductor layer 50 and the

electrodes

70 and 80, and the light reflection layer R is formed of an insulating layer such as SiO ₂ , a DBR ( It may have a multilayer structure including a distributed bragg reflector or an omni-directional reflector (ODR). Alternatively, as shown in FIG. 13B, a metal reflective film R is provided on the second semiconductor layer 50, an electrode 70 is provided on the metal reflective film R, and is exposed by mesa etching. The semiconductor layer 50 may be in communication with another electrode 80. The device transfer device 501 described above may recognize the shape or the pattern of the

electrodes

70 and 80.

FIG. 14 is a view for explaining an example of a method of supplying a material for forming an encapsulant in each opening using a mask as a dam in the method of manufacturing a semiconductor light emitting device according to the present disclosure. As shown in FIG. The dispenser 601 may supply a material for forming the encapsulant 170 in each opening 305. Alternatively, as shown in FIG. 14B, a method of pushing and flattening a material forming the encapsulant 170 may be used. The material forming the encapsulant 170 is one of a light transmissive material and a light transmissive material including a wavelength converting material. The light transmitting material may be one of a silicone resin and an epoxy resin.

FIG. 15 is a view for explaining examples of a form in which a material forming an encapsulant is supplied to an opening and cured in the method of manufacturing a semiconductor light emitting device according to the present disclosure, and the encapsulant 170 is formed by a dispenser 601. The upper surface of the encapsulant 170 may be slightly convex, as illustrated in FIG. When the encapsulant 170 is formed in such a shape, it may be helpful to make the distribution of light from the semiconductor light emitting device chip 101 into a desired shape. In addition, it may be flattened as shown in Fig. 15B. On the other hand, as shown in Fig. 15 (c), it is also possible to have a wall 303 higher than the mask 301 outside the mask 301 and to form a higher sealing material 170 than the mask 301. It is also possible to supply a material forming the encapsulant 170 below the height of the mask 301, which will be described in FIG. 20. Thereafter, as shown in FIG. 15D, when the clamp 401 (see FIG. 11) is released, the mask 301, the encapsulant 170, and the semiconductor light emitting device chip 101 are integrally formed from the base 201. Are separated. Here, the combination of the mask 301, the encapsulant 170, and the semiconductor light emitting device chip 101 may be used as an element. On the other hand, when the base 201 and the mask 301 are bonded by an adhesive or other method, the mask 301, the encapsulant 170, the semiconductor light emitting device chip 101, and the base 201 are integrally formed to emit light of the semiconductor. It can also be used as an element. Alternatively, the mask 301 may be removed to separate the individual semiconductor light emitting devices, or the mask 301 may be cut to separate the semiconductor light emitting devices, or the mask 301 and the base 201 may be cut together to separate the semiconductor light emitting devices. Can be separated.

FIG. 16 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In this example, as shown in FIG. 16A before placing the semiconductor light emitting device chip 101 on the base 201. In addition, the wavelength conversion agent is conformally coated (eg, spray coated) on the surface of the semiconductor light emitting device chip 101. The wavelength converting layer 102 is much smaller in volume or thickness than the encapsulant 170, but may be uniformly coated on the semiconductor light emitting device chip 101, and may reduce the amount of the wavelength converting agent. For example, the thickness of the wavelength converter layer 102 is about 30um and the thickness of the encapsulant 170 is about 100um ~ 200um.

After that, the mask 301 is first disposed on the base 201, the pattern recognition is performed, and the wavelength converting agent layer 102 is formed in each opening 305 of the mask 301 by the element transfer device 501 capable of position and angle correction. Is disposed on the semiconductor light emitting device chip 101. Thereafter, as shown in FIG. 16B, the material forming the encapsulant 170 in the opening 305 is supplied and cured. In this case, the material forming the encapsulant 170 may be made of a light-transmissive material so as not to contain a wavelength converting agent and merely to encapsulate the protective material. Thereafter, as shown in FIG. 16C, the base 201 is separated from the mask 301, the encapsulant 170, and the semiconductor light emitting device chip 101. Separation may be achieved by releasing the clamp 401 when the base 201 is a rigid plate, or by striking the base 201 when the base 201 is a film or tape.

FIG. 17 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the present example, a method of manufacturing a semiconductor light emitting device supplies and hardens a material forming the encapsulant 170, and a mask. And separating each of the semiconductor light emitting devices from the mask 301 after the assembly of the 301, the encapsulant 170, and the semiconductor light emitting device chip 101 is separated from the base 201. As a method of separation, a method of removing the semiconductor light emitting element from the mask 301 may be used.

For example, a shooter or similar device may be used to withdraw from the mask 301. Pushing the semiconductor

light emitting devices

101, 102 and 170 out of the mask 301 by hitting the semiconductor light emitting device from below with a pin 702 or a rod, the vacuum light adsorption from above, or the semiconductor fixing device 701 is used to hold and transport the semiconductor light emitting device. can do. Since there is a bonding force between the mask 301 and the encapsulant 170, the semiconductor light emitting device may be damaged if it is pulled out with too strong force, so that the bonding force between the mask 301 and the encapsulant 170 may be removed from the mask 301. You may want to consider adding a controllable configuration.

18 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 800 includes a semiconductor light emitting device chip 810 including a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, and an electrode 811 electrically connected to the plurality of semiconductor layers. The first encapsulation material 820 and the first encapsulation material 820 disposed on the semiconductor light emitting device chip 810 are positioned on the first encapsulation material 820. It includes a second encapsulant 830 to be large. The semiconductor light emitting device chip 810 is preferably a flip chip. The first encapsulant 820 may be formed of one of a light transmissive material and a light transmissive material including the wavelength conversion material 821. The light transmitting material may be, for example, an epoxy resin or a silicone resin. In addition, the first encapsulant 820 is formed to surround the side surface 812 of the semiconductor light emitting device chip 810. However, the electrode 811 of the semiconductor light emitting device chip 810 is exposed toward the lower surface 822 of the first encapsulant 820. In addition, the top surface 840 of the first encapsulant 820 is convex to form a cavity 841 surrounded by the first encapsulant 820. The ratio of the height 824 of the highest point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820 based on the lower surface 822 of the first encapsulant 820 is 1: 2. Is preferably. The upper surface of the first encapsulant 820 according to the ratio of the height 824 of the highest point 823 and the width 825 of the first encapsulant 820 based on the lower surface 822 of the first encapsulant 820. 840 can adjust the degree of convex downwards. Further, the degree that the upper surface 840 of the first encapsulant 820 is convex downward is equal to the height 824 of the highest point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820. Not only the ratio but also the amount of the material forming the first encapsulant 820 may be adjusted. Details will be described with reference to FIG. 20. Although not illustrated, the first encapsulant 820 may be formed only on the semiconductor light emitting device chip 810 without surrounding the side surface 812 of the semiconductor light emitting device chip 810. The second encapsulant 830 is positioned above the first encapsulant 820, and is particularly located in the cavity 841 surrounded by the first encapsulant 820. The second encapsulant 830 may be formed of one of a light transmissive material and a light transmissive material including the wavelength conversion material 821. For example, as illustrated in FIG. 18, the first encapsulant 820 may be formed of a light transmissive material including the wavelength converter 821, and the second encapsulant 830 may be formed of only a light transmissive material. However, only the second encapsulant 830 may be formed of a light transmissive material including a wavelength converting material, and both the first encapsulating material 820 and the second encapsulating material 830 may be formed of a light transmissive material including a wavelength converting material. Can be formed. In addition, the top surface 831 of the second encapsulant 830 is convex upward in order to increase the directivity angle of the light 850 directed from the semiconductor light emitting device chip 810 and to increase the light extraction efficiency. The light 850 exiting to the upper side of the semiconductor light emitting device chip 810 is enlarged by the second encapsulant 830 and exits to the upper side of the semiconductor light emitting device 800. The directing angle of the light 860 exiting in the upper vertical direction is 90 degrees, and when the tilting angle is higher than the upper vertical direction, the directing angle is increased.

19 is a view for explaining the effect of the lower surface of the first encapsulant in the semiconductor light emitting device according to the present disclosure.

Referring to FIG. 19A, when the upper surface 940 of the first encapsulant 920 is flat in the semiconductor light emitting device 900, an upper surface 931 of the second encapsulant 930 formed on the first encapsulant 920 is formed. ) Is not convex well and is relatively flat. Of course, in order for the upper surface 931 of the second encapsulant 930 to be convex upward, the viscosity of the material forming the second encapsulant 930 may be increased, but the material forming the second encapsulant 930 having a high viscosity may be increased. It is difficult to form the second encapsulant 930 by using. When the upper surface 931 of the second encapsulant 930 is not sufficiently convex upward, the directivity angle of the light exiting to the upper side of the semiconductor light emitting device chip 910 may not be sufficiently increased. However, referring to FIG. 19B, when the upper surface 840 of the first encapsulant 820 is convex downward in the semiconductor light emitting device 800, the second encapsulant 830 formed on the first encapsulant 820 may be formed. The upper surface 831 is convex well, so that the light exiting to the upper side of the semiconductor light emitting device chip 810 is sufficiently enlarged by the second encapsulant 830, so that the upper surface 831 may exit to the upper side of the semiconductor light emitting device 800. In particular, even when the viscosity of the material forming the second encapsulant 830 is low, the upper surface 831 of the second encapsulant 830 is convexly well formed.

20 is a diagram illustrating an example of a method of manufacturing the semiconductor light emitting device disclosed in FIG. 18.

Referring to FIG. 20A, a mask 1100 having at least one opening 1110 formed on a base 1000 is provided (S1). Thereafter, the semiconductor light emitting device chip 1200 is placed on the base 1000 exposed through each opening 1110 of the mask 1100 (S2). The transfer apparatus described in FIG. 12 can be used. The electrode 1210 of the semiconductor light emitting device chip 1200 faces the base 1000. In addition, in step S3, the width 1120 of the opening 1110 of the mask 1100 may be the semiconductor light emitting device chip 1200 so that the first encapsulant 1300 may surround the side surface of the semiconductor light emitting device chip 1200. It is preferable that the width 1220 is sufficiently larger than. Subsequently, the light-transmitting first encapsulant 1300 is formed in each opening 1110 using the mask 1100 as a dam (S3). In particular, the material forming the first encapsulation material 1300 climbs on the inner surface 1130 of the mask 1100 forming the opening 1110, and the upper surface of the first encapsulation material 1300 is convex downward so that the first encapsulation material is formed. The first encapsulant 1300 is formed to form a cavity 1310 surrounded by the ash 1300. In order for the material forming the first encapsulation material 1300 to climb up the inner surface 1130 of the mask 1100, the material forming the first encapsulation material 1300 is lower than the height 1320 of the mask 1100. The opening 1110 of the mask 1100 should be filled. In addition, according to the amount of the material forming the first encapsulation material 1300, the degree to which the material forming the first encapsulation material 1300 climbs on the inner surface 1130 of the mask 1100 is changed, and accordingly, the first encapsulation material is formed. The degree to which the upper surface of the ash 1300 is convex downward may vary. Thereafter, a transparent second encapsulant 1400 is formed in the cavity 1310 surrounded by the first encapsulant 1300. The second encapsulant 1400 may be formed only in the cavity 1310 to have a shape as shown in FIG. 18, but may be formed out of the cavity 1310 to have a shape as shown in FIG. 21A. In addition, the upper surface 1410 of the second encapsulant 1400 is formed to be convex upward. As shown in FIG. 20 (a), the upper surface 1410 of the second encapsulant 1400 may be convex upward, but the upper surface 1410 of the second encapsulant 1400 is convex upward, as shown in FIG. 21 (b). It can vary. Thereafter, the base 1000 and the mask 1100 may be removed to obtain a semiconductor light emitting device including only the first encapsulation material 1300, the second encapsulation material 1400, and the semiconductor light emitting device chip 1200. However, as described with reference to FIG. 15, a semiconductor light emitting device including one of a base and a mask or both a base and a mask may be used in addition to the first encapsulation material, the second encapsulation material, and the semiconductor light emitting device chip. In addition, in the plan view of the mask 1100 illustrated in FIG. 10, the planar shape of the opening 1110 of the mask 1100 is rectangular, but as shown in FIG. 20B, the planar shape of the opening 1110 of the mask 1100 is circular, polygonal, or the like. According to the planar shape of the opening 1110, the planar shape of the semiconductor light emitting device may be polygonal to circular. Preferably, the planar shape of the semiconductor light emitting element is circular. In addition, as shown in FIG. 20C, the width 1120 of the opening 1110 of the mask 1100 may become smaller as the width goes down. In this case, the semiconductor light emitting device formed in the opening 1110 may include the mask 1100. Since it can be separated only upward without falling down, instead of being separated one by one as shown in FIG. 11, the semiconductor light emitting device formed in the mask 1100 and the opening 1110 is inverted together, and then the mask 1100 is moved in the direction of the arrow 1410. As a result, the plurality of semiconductor light emitting devices 1420 formed in the opening 1110 may be separated from the mask 1100 at one time. Although not shown, the width 1120 of the opening 1110 of the mask 1100 may be increased as the width is lowered, and the mask 1100 may be formed without inverting the mask 1100 and the semiconductor light emitting elements formed in the opening 1110 together. The same effect can be obtained that the width 1120 of the opening 1110 becomes narrower as it goes down. Except what is described in FIG. 20, the remainder is substantially the same as the manufacturing method of the semiconductor light emitting element of FIGS.

21 is a view illustrating various embodiments of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1500 illustrated in FIG. 21A includes a semiconductor light emitting device chip 1510, a first encapsulating material 1520, and a second encapsulating material 1530. The side surface 1153 of the second encapsulant 1530 is exposed to the outside. The semiconductor light emitting device 1600 illustrated in FIG. 21B includes a semiconductor light emitting device chip 1610, a first encapsulating material 1620, and a second encapsulating material 1630. The upper surface 1633 of the second encapsulant 1630 includes an upwardly convex portion 1631 and an downwardly convex portion 1632. Except as described in FIG. 21, the semiconductor

light emitting devices

1500 and 1600 are substantially the same as the semiconductor light emitting device 800 of FIG. 18.

22 illustrates an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 800 includes a semiconductor light emitting device chip 810 including a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes, and an electrode 811 electrically connected to the plurality of semiconductor layers. The second encapsulant 820 disposed on the semiconductor light emitting device chip 810 and the second encapsulation material disposed on the first encapsulant 820 and reflect light 850 from the semiconductor light emitting device chip 810. 830. The semiconductor light emitting device chip 810 is preferably a flip chip. The first encapsulant 820 may be formed of one of a light transmissive material and a light transmissive material including the wavelength conversion material 821. In addition, the first encapsulant 820 is formed to surround the side surface 812 of the semiconductor light emitting device chip 810. However, the electrode 811 of the semiconductor light emitting device chip 810 is exposed toward the lower surface 822 of the first encapsulant 820. In addition, the top surface 840 of the first encapsulant 820 is convex to form a cavity 841 surrounded by the first encapsulant 820. The ratio of the height 824 of the highest point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820 based on the lower surface 822 of the first encapsulant 820 is 1: 2. Is preferably. The upper surface of the first encapsulant 820 according to the ratio of the height 824 of the highest point 823 and the width 825 of the first encapsulant 820 based on the lower surface 822 of the first encapsulant 820. This is because the 840 can adjust the convex downward and the extraction efficiency of the light 850 exiting the side of the semiconductor light emitting device 800 at a ratio of 1: 1.5 to 1: 3 is high. Further, the degree that the upper surface 840 of the first encapsulant 820 is convex downward is equal to the height 824 of the highest point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820. Not only the ratio but also the amount of the material forming the first encapsulant 820 may be adjusted, and details thereof will be described with reference to FIG. 25. The ratio of the degree that the upper surface 840 of the first encapsulant 820 is convex downward, the height 824 of the highest point 823 of the first encapsulant 820, and the width 825 of the first encapsulant 820 are The directivity angle of the light 850 exiting the side of the semiconductor light emitting device 800 may be adjusted, and the directivity angle adjustment will be described with reference to FIG. 26. Although not illustrated, the first encapsulant 820 may be formed only on the semiconductor light emitting device chip 810 without surrounding the side surface 812 of the semiconductor light emitting device chip 810. The second encapsulant 830 is positioned above the first encapsulant 820, and is particularly located in the cavity 841 surrounded by the first encapsulant 820. The second encapsulant 830 is formed of a material that reflects light, and may be, for example, a white silicone resin. Alternatively, the second encapsulant 830 may be formed of a semi-transparent material that reflects some light and transmits some light. Light 850 exiting to the upper side of the semiconductor light emitting device chip 810 is reflected by the second encapsulant 830 and exits to the side surface of the semiconductor light emitting device 800.

FIG. 23 is a diagram illustrating an application example of the semiconductor light emitting device disclosed in FIG. 22.

A liquid crystal display (LCD) is a device that displays an image by injecting a liquid crystal between two glass plates and applying power to the upper and lower glass plate electrodes to change the liquid crystal molecular array in each pixel. Unlike a cathode ray tube (CRT), a plasma display panel (PDP), and the like, a display by a liquid crystal display is not light-emitting because it is non-luminous in itself. To compensate for these disadvantages, a light source assembly for uniformly irradiating light onto the information display surface is mounted for the purpose of enabling use in a dark place. The light source assembly used for the liquid crystal display device is largely classified into two types. The first is an edge type light source assembly that provides light at the side of the liquid crystal display, and the second is a direct type light source assembly that provides light directly at the rear of the liquid crystal display. Conventional technology related to a direct type light source assembly is disclosed in Korean Unexamined Patent Publication No. 2007-0106397, Korean Unexamined Patent Publication No. 2008-0021370, and Korean Unexamined Patent Publication No. 2006-0031518. In the direct type light source assembly, in order to reduce the number of light sources used and to make a uniform surface light source, semiconductor light emitting is formed in the groove 901 on the lower surface of the light guide plate 900 as shown in FIG. An element may be used as a light source, and the semiconductor light emitting device 800 according to FIG. 22 may be used as a light source emitting sideways. In particular, when the second encapsulant 830 is formed of a semi-transparent material that reflects some light and transmits some light, some of the light 850 exiting to the upper side of the semiconductor light emitting device chip 810 as shown in FIG. The light may be reflected by the second encapsulant 830 to the side surface of the semiconductor light emitting device 800, and a part of light 851 may pass through the second encapsulant 830 to exit the semiconductor light emitting device 800. The light 852 that exits the side of the semiconductor light emitting device chip 810 that does not meet the second encapsulant 830 exits to the side of the semiconductor light emitting device 800 and emits light uniformly around the semiconductor light emitting device 800. do. The light emission characteristics of the semiconductor light emitting device according to the present disclosure are shown in FIG. 28.

24 is a diagram illustrating an example of a method of manufacturing the semiconductor light emitting device disclosed in FIG. 22.

Referring to FIG. 22A, first, a mask 1100 having at least one opening 1110 formed on a base 1000 is provided (S1). Thereafter, the semiconductor light emitting device chip 1200 is placed on the base 1000 exposed through each opening 1110 of the mask 1100 (S2). The transfer apparatus described in FIG. 12 can be used. The electrode 1210 of the semiconductor light emitting device chip 1200 faces the base 1000. In addition, in step S3, the width 1120 of the opening 1110 of the mask 1100 may be the semiconductor light emitting device chip 1200 so that the first encapsulant 1300 may surround the side surface of the semiconductor light emitting device chip 1200. It is preferable that the width 1220 is sufficiently larger than. After that, the mask 1100 is used as a dam to form a first encapsulant 1300 in each opening 1110 (S3). In particular, the first encapsulant 1300 allows the material forming the first encapsulant 1300 to climb up the inner surface 1130 of the mask 1100 to form a downwardly convex cavity 1310 surrounded by the first encapsulant 1300. 1300. In order for the material forming the first encapsulation material 1300 to climb up the inner surface 1130 of the mask 1100, the material forming the first encapsulation material 1300 is lower than the height 1320 of the mask 1100. The opening 1110 of the mask 1100 should be filled. Thereafter, a second encapsulant 1400 reflecting light is formed in the cavity 1310 surrounded by the first encapsulant 1300. The second encapsulant 1400 may be formed only in the cavity 1310 to have a shape as shown in FIG. 22, but may be formed outside the cavity 1310 to have a shape as shown in FIG. 25A. Thereafter, the base 1000 and the mask 1100 may be removed to obtain a semiconductor light emitting device including only the first encapsulation material 1300, the second encapsulation material 1400, and the semiconductor light emitting device chip 1200. However, as described with reference to FIG. 15, a semiconductor light emitting device including one of a base and a mask or both a base and a mask may be used in addition to the first encapsulation material, the second encapsulation material, and the semiconductor light emitting device chip. 10, the planar shape of the opening 1110 of the mask 1100 is rectangular, but the planar shape of the opening 1110 of the mask 1100 is circular, polygonal, or the like, as shown in FIG. According to the planar shape of the opening 1110, the planar shape of the semiconductor light emitting device may be polygonal to circular. As the planar shape of the semiconductor light emitting device is circular, the semiconductor light emitting device generates more uniform light around the semiconductor light emitting device, and the light emission characteristics of the semiconductor light emitting device are illustrated in FIG. 28. In addition, as shown in FIG. 24C, the width 1120 of the opening 1110 of the mask 1100 may become smaller as the width goes down. In this case, the semiconductor light emitting device formed in the opening 1110 may have a mask 1100. Since they can be separated only upwards without falling down, instead of being separated one by one as shown in FIG. 21, the semiconductor light emitting devices formed in the mask 1100 and the opening 1110 are inverted together, and then the mask 1100 is moved in the direction of the arrow 1410. As a result, the plurality of semiconductor light emitting devices 1420 formed in the opening 1110 may be separated from the mask 1100 at one time. Although not shown, the width 1120 of the opening 1110 of the mask 1100 may be increased as the width is lowered, and the mask 1100 may be formed without inverting the mask 1100 and the semiconductor light emitting elements formed in the opening 1110 together. The same effect can be obtained that the width 1120 of the opening 1110 becomes smaller as it goes down. Except as described in FIG. 24, the rest is substantially the same as the method of manufacturing the semiconductor light emitting device of FIGS.

25 is a view illustrating various embodiments of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1500 illustrated in FIG. 25A includes a semiconductor light emitting device chip 1510, a first encapsulating material 1520, and a second encapsulating material 1530 reflecting light. The side surface 1153 of the second encapsulant 1530 is exposed to the outside. The semiconductor light emitting device 1600 illustrated in FIG. 25B includes a semiconductor light emitting device chip 1610, a first encapsulating material 1620, and a second encapsulating material 1630 that reflects light. The upper surface 1163 of the first encapsulant 1620 is largely convex downward. The degree of convexity of the upper surface 1631 downwards depends on the amount of material forming the first encapsulant 1300 filled in the width 1120 of the mask 1100 and the opening 1110 of the mask 1100 in FIG. 24. I can regulate it. For example, as the amount of the material forming the first encapsulant 1300 filled in the opening 1110 of the mask 1100 increases, the degree of convexity becomes smaller and becomes flat. In addition, as illustrated in FIG. 25C, the semiconductor light emitting device 1640 is provided with a portion 1662 and a flat portion 1601 having an upper surface of the first encapsulant 1660 convex downward. The directing angle of the light exiting to the side surface of the semiconductor light emitting device 1640 may be adjusted by a ratio of the flat portion 1601 and the convex portion 1662 on the upper surface of the first encapsulant 1660. The second encapsulant 1670 reflecting light is formed on the flat portion 1601 as well as the cavity 1663 formed by the convex portion 1662 of the upper surface of the first encapsulant 1660. Except as described in FIG. 25, the semiconductor

light emitting devices

1500, 1600, and 1640 are substantially the same as the semiconductor light emitting device 800 of FIG. 22.

FIG. 26 is a view illustrating an effect of the top surface of the first encapsulant being convex downward in the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1700 includes light 1740 emitted from the semiconductor light emitting device chip 1710 according to the degree to which the

top surfaces

1731, 1732, and 1733 of the first encapsulant 1720 are convex downward. You can adjust the directing angle from the exit. For the purpose of explanation, the

upper surfaces

1731, 1732, and 1733 of the first encapsulant 1720 are also displayed on one semiconductor light emitting device 1700. Referring to FIG. 26, the light 1740 emitted upward from the semiconductor light emitting device chip 1710 is reflected from the

upper surfaces

1731, 1732, and 1733 having different downwardly convex degrees of the first encapsulant 1720, thereby emitting semiconductor light. Light (1741, 1742, 1743) to the side of the device 1700, in particular, the direction of the light (1743) reflected by the flat upper surface (1733) of the first encapsulant 1720 is the largest and convex downward degree It can be seen that the direction angle of the light (1741) reflected by the largest upper surface (1731) is the smallest. The directing angle of the virtual light 1750 going out in the upper vertical direction is set to 90 degrees, and when the tilting angle is higher than the upper vertical direction, the directing angle is increased. The light exiting to the upper side of the semiconductor light emitting device chip 1710 due to the second encapsulant 1730 increases the directing angle. In particular, as the

upper surfaces

1731, 1732, and 1733 of the first encapsulant 1730 are flattened, Closer to 180 degrees. Although not shown, the ratio of the width 1750 of the first encapsulant 1730 of the semiconductor light emitting device 1700 and the height of the highest point 1775 may also affect the orientation angle. Except as described in FIG. 26, the semiconductor light emitting device 1700 is substantially the same as the semiconductor light emitting device 800 of FIG. 22.

27 illustrates another example of the semiconductor light emitting device according to the present disclosure.

In the semiconductor light emitting device 1800, the second encapsulant 1830 is thin on the top surface 1822 of the first encapsulant 1820 instead of filling the cavity 1721 surrounded by the first encapsulant 1820. It is characterized by being formed into a film. In particular, the second encapsulant 1830 having a film form is preferably a metal film 1830. The metal film 1830 has an advantage of high reflectance to light. In the manufacturing method of FIG. 24, instead of forming the second encapsulant by filling the cavity surrounded by the first encapsulant with the material forming the second encapsulant in step S4, a metal film is formed on the upper surface of the first encapsulant forming the cavity. The metal film may be formed by one of deposition, plating, and spray methods, and the metal is preferably silver or aluminum. Except as described in FIG. 27, the semiconductor light emitting device 1800 is substantially the same as the semiconductor light emitting device 800 of FIG. 22.

28 is a view showing an example of light emission according to the planar shape of the semiconductor light emitting device according to the present disclosure.

28 illustrates an example of light emission characteristics according to a planar shape of the semiconductor light emitting device 1900. The planar shape of the semiconductor light emitting device 1900 is the same as the planar shape of the

openings

305 and 1110 of the

masks

301 and 1100 shown in FIGS. 24B and 10. As shown in FIG. 28C, the closer the planar shape of the semiconductor light emitting device 1900 is to the circular shape, the more light is emitted around the semiconductor light emitting device 1900. That is, the light is emitted more evenly around the semiconductor light emitting device 1900 from FIG. 28A to FIG. 28C. In addition, light is not emitted to the upper side of the semiconductor light emitting device 1900, thereby showing dark. Although not shown in the experimental example, when the second encapsulant transmits part of light and reflects part of the light, the second encapsulant emits light toward the upper side of the semiconductor light emitting device 1900, rather than the light emitting device 1900 of FIG. 28. The upper side may be brighter.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a semiconductor light emitting device chip, comprising: a semiconductor including a plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; A first encapsulation material positioned on the semiconductor light emitting device chip; A second encapsulant positioned on a side of the semiconductor light emitting device chip and under the first encapsulant; And a third encapsulation material positioned on a side surface of the semiconductor light emitting device chip and under the second encapsulation material.

(2) The semiconductor light emitting element is characterized in that the electrode of the semiconductor light emitting chip is exposed in the lower surface direction of the third encapsulant.

(3) The interface between the second encapsulation member and the third encapsulant is curved.

(4) A semiconductor light emitting element, characterized in that the curve is convex upward.

(5) The semiconductor light emitting device according to claim 1, wherein the first encapsulation material is formed of a sheet including a wavelength conversion material.

(6) The third encapsulant is formed of a colored reflective material.

(7) The second encapsulation material is a semiconductor light emitting device, characterized in that formed of at least one of a light transmitting material and a light transmitting material containing a wavelength conversion material.

(8) A semiconductor light emitting element, characterized in that the shortest distance between the first encapsulant and the third encapsulant is greater than zero.

(9) A method of manufacturing a semiconductor light emitting device, comprising the steps of: preparing a first encapsulant; Forming a second encapsulation material on the first encapsulation material; forming a second encapsulation material on which the material forming the liquid second encapsulation material is applied onto the first encapsulation material; Placing a plurality of semiconductor light emitting device chips on the second encapsulation material, such that an active layer of the semiconductor light emitting device chip is positioned between the first encapsulation material and an electrode of the semiconductor light emitting device chip, and the liquid second encapsulation material is a semiconductor light emitting device chip. Laying up a plurality of semiconductor light emitting device chips on the side of the second encapsulant to be raised upward; Forming a third encapsulant on the convex portion formed in the second encapsulant; And cutting the semiconductor light emitting device chip between the semiconductor light emitting device chip and the semiconductor light emitting device chip.

(10) A method of manufacturing a semiconductor light emitting element, wherein the thickness of applying the substance forming the liquid second encapsulant on the first encapsulant is less than 20 μm.

(11) A method of manufacturing a semiconductor light emitting device, characterized in that the thickness of applying the material forming the liquid second encapsulant on the first encapsulant is 20 μm or more and 0.8 or less of the thickness of the semiconductor light emitting device chip placed on the second encapsulant. .

(12) A semiconductor light emitting device comprising: a semiconductor light emitting device chip, comprising: a semiconductor comprising a plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; A first encapsulating material positioned on the semiconductor light emitting device chip; a first encapsulating material including a cavity surrounded by the first encapsulating material with a top surface of the first encapsulating material convex downward; And a translucent second encapsulant formed in the cavity of the first encapsulant; a second encapsulant having an upper surface of the second encapsulant convex upward.

(13) A semiconductor light emitting device, characterized in that the first encapsulation material surrounds the side surface of the semiconductor light emitting device chip.

(14) A semiconductor light emitting element, wherein an electrode of the semiconductor light emitting element chip is exposed in the lower surface direction of the first encapsulant.

(15) At least one of the first encapsulating material and the second encapsulating material includes a wavelength converting material.

(16) The semiconductor light emitting device according to claim 2, wherein the upper surface of the second encapsulant includes a convex portion upward and a convex portion downward.

(17) A method of manufacturing a semiconductor light emitting device, comprising: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed by each opening of the mask; Forming a first encapsulant in each opening by using the mask as a dam; as a material forming the first encapsulant rises up the inner surface of the mask, the upper surface of the first encapsulant is convex downward, thereby forming a first encapsulant. Forming a first encapsulant to form a cavity surrounded by the encapsulant; And forming a second encapsulation material having a top surface convex in a cavity surrounded by the first encapsulation material.

And (18) removing the base and the mask after the step of forming the second encapsulation material having the top surface convex upward in the cavity surrounded by the first encapsulation material.

(19) The method of manufacturing a semiconductor light emitting device comprising placing a semiconductor light emitting device chip on a base exposed through each opening of a mask, so that the semiconductor light emitting device chip is placed so that an electrode of the semiconductor light emitting device chip faces the base.

(20) The step of forming the first encapsulant in each opening using the mask as a dam, wherein the material forming the first encapsulant fills the opening of the mask below the height of the mask. Method of preparation.

(21) A method of manufacturing a semiconductor light emitting device, characterized in that the step of providing a mask having at least one opening formed on the base comprises a mask having an opening whose planar shape is one of a rectangle, a circle, and a polygon.

(22) A method of manufacturing a semiconductor light emitting device, characterized in that the step of providing a mask having at least one opening formed on the base comprises a mask having an opening whose width becomes smaller as the opening goes downward.

(23) A method of manufacturing a semiconductor light emitting device, characterized in that the step of providing a mask having at least one opening formed on the base comprises a mask having an opening that increases in width toward the bottom of the opening.

(24) A semiconductor light emitting device comprising: a semiconductor light emitting device chip, comprising: a semiconductor comprising a plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers Light emitting device chip; A first encapsulation material positioned on the semiconductor light emitting device chip; a first encapsulation material including a cavity surrounded by the first encapsulation material with a top surface of the first encapsulation material convex downward; And a second encapsulation material formed in a cavity of the first encapsulation material and reflecting light emitted from the semiconductor light emitting device chip.

(25) A semiconductor light emitting element according to claim 1, wherein the ratio of the height and width of the highest point of the first encapsulant is 1: 2.

(26) A semiconductor light emitting element, characterized in that the second encapsulant is semi-transmissive which transmits part of the light and reflects part of the light.

(27) A semiconductor light emitting element, wherein the second encapsulation material fills a cavity surrounded by the first encapsulation material.

(28) A semiconductor light emitting device, characterized in that the second encapsulant is formed of a metal film on the upper surface of the first encapsulant.

(29) A semiconductor light emitting device, characterized in that the material forming the first encapsulation material is a light transmitting material containing a wavelength conversion material.

30. A method of manufacturing a semiconductor light emitting device, comprising the steps of: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed by each opening of the mask; Forming a first encapsulant in each opening by using the mask as a dam; as a material forming the first encapsulant rises up the inner surface of the mask, the upper surface of the first encapsulant is convex downward, thereby forming a first encapsulant. Forming a first encapsulant to form a cavity surrounded by the encapsulant; And forming a second encapsulation material that reflects light in the cavity surrounded by the first encapsulation material.

And (31) removing the base and the mask after forming the second encapsulant reflecting light in the cavity surrounded by the first encapsulant.

(32) forming the second encapsulant reflecting light in the cavity surrounded by the first encapsulant comprises filling a material forming the second encapsulant in the cavity enclosed by the first encapsulant. Manufacturing method.

(33) The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the forming of the second encapsulant reflecting light in the cavity surrounded by the first encapsulant comprises forming a metal film on the upper surface of the first encapsulant.

(34) The upper surface of the first encapsulant includes a flat portion, and the second encapsulant is also formed on the flat portion of the upper surface of the first encapsulant.

According to the semiconductor light emitting device and the manufacturing method according to the present disclosure, it is possible to obtain a CSP type semiconductor light emitting device having a large directing angle of light extracted upward.

In addition, according to the method of manufacturing a semiconductor light emitting device according to the present disclosure, the semiconductor light emitting device chip can be arranged at a more accurate position and angle by using a mask as a guide pattern of the semiconductor light emitting device chip arrangement. Therefore, in the post-process, for example, the separation process into individual devices (eg, sawing, etc.), the occurrence of defects due to the misalignment of the semiconductor light emitting device chips is reduced.

In addition, compared to a method in which a mask is placed on a tape on which semiconductor light emitting chip chips are arranged and an encapsulant is supplied after an additional process of filling a space in a tape or correcting an angle of a distorted semiconductor light emitting chip, The method according to this method is efficient since no further processing is required.

According to the present disclosure, a CSP type semiconductor light emitting device having improved light extraction efficiency can be obtained.

According to the semiconductor light emitting device and the manufacturing method according to the present disclosure, it is possible to obtain a CSP type semiconductor light emitting device having a high efficiency of light extracted to the side.

Claims

In a semiconductor light emitting device,

A semiconductor light emitting device chip comprising: a semiconductor light emitting device chip having a plurality of semiconductor layers including an active layer for generating light by recombination of electrons and holes, and electrodes electrically connected to the plurality of semiconductor layers;

A first encapsulation material positioned on the semiconductor light emitting device chip;

A second encapsulant positioned on a side of the semiconductor light emitting device chip and under the first encapsulant; And

And a third encapsulation material positioned on a side of the semiconductor light emitting device chip and under the second encapsulation material.
The method according to claim 1,

The electrode of the semiconductor light emitting device chip is exposed in the lower surface direction of the third encapsulant.
The method according to claim 1,

The interface between the second encapsulant and the third encapsulant is curved.
The method according to claim 3,

The curved line is a semiconductor light emitting device, characterized in that the convex shape.
The method according to claim 1,

The first encapsulation material is a semiconductor light emitting device, characterized in that formed of a sheet containing a wavelength conversion material.
The method according to claim 1,

The third encapsulation material is a semiconductor light emitting device, characterized in that formed of colored reflective material.
The method according to claim 1,

The second encapsulation material is a semiconductor light emitting device, characterized in that formed with at least one of a light transmitting material and a light transmitting material containing a wavelength conversion material.
The method according to claim 1,

The shortest distance between a 1st sealing material and a 3rd sealing material is larger than 0, The semiconductor light emitting element characterized by the above-mentioned.
In the method of manufacturing a semiconductor light emitting device,

Preparing a first encapsulant;

Forming a second encapsulation material on the first encapsulation material; forming a second encapsulation material on which the material forming the liquid second encapsulation material is applied onto the first encapsulation material;

Placing a plurality of semiconductor light emitting device chips on the second encapsulation material, such that an active layer of the semiconductor light emitting device chip is positioned between the first encapsulation material and an electrode of the semiconductor light emitting device chip, and the liquid second encapsulation material is a semiconductor light emitting device chip. Laying up a plurality of semiconductor light emitting device chips on the side of the second encapsulant to be raised upward;

Forming a third encapsulant on the convex portion formed in the second encapsulant; And,

And cutting a semiconductor light emitting device chip between the semiconductor light emitting device chip and the semiconductor light emitting device chip.
The method according to claim 9,

The thickness of applying the material forming the liquid second encapsulation material on the first encapsulation material is less than 20um.
The method according to claim 9,

The thickness of applying the material forming the liquid second encapsulant on the first encapsulant is 20um or more and 0.8 or less of the thickness of the semiconductor light emitting element chip placed on the second encapsulant.