WO2017217252A1 - 異物除去装置 - Google Patents

異物除去装置 Download PDF

Info

Publication number
WO2017217252A1
WO2017217252A1 PCT/JP2017/020553 JP2017020553W WO2017217252A1 WO 2017217252 A1 WO2017217252 A1 WO 2017217252A1 JP 2017020553 W JP2017020553 W JP 2017020553W WO 2017217252 A1 WO2017217252 A1 WO 2017217252A1
Authority
WO
WIPO (PCT)
Prior art keywords
foreign matter
carbon dioxide
matter removing
chamber
removing apparatus
Prior art date
Application number
PCT/JP2017/020553
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
智宣 中村
洋 尾又
Original Assignee
株式会社新川
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社新川 filed Critical 株式会社新川
Priority to CN201780049515.2A priority Critical patent/CN109564865B/zh
Priority to KR1020197001065A priority patent/KR102133214B1/ko
Publication of WO2017217252A1 publication Critical patent/WO2017217252A1/ja

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Definitions

  • the present invention relates to a foreign matter removing device, and more particularly to a structure of a foreign matter removing device that removes foreign matter using solid carbon dioxide particles.
  • a die bonding apparatus for bonding a semiconductor die cut from a wafer to a substrate, a wire bonding apparatus for connecting a semiconductor die electrode bonded to the substrate and a substrate electrode with a wire, and a semiconductor die
  • Many devices such as a flip chip bonding apparatus are used in which bumps are formed on the electrodes and the semiconductor die is inverted and fixed to the substrate, and the electrodes of the semiconductor die and the substrate are connected.
  • a bonding apparatus for laminating and bonding a semiconductor die on a semiconductor die of a wafer has also been used.
  • a semiconductor die is bonded to a predetermined position of the substrate, or an electrode of the semiconductor die and an electrode of the substrate are connected by a wire.
  • the adhesive strength of the adhesive may be reduced.
  • dust or the like adheres to the surface of the substrate electrode or the semiconductor die electrode, the bonding quality between the electrode and the wire may deteriorate.
  • liquid carbon dioxide CO 2
  • a technique for removing foreign matter from a semiconductor die or a substrate using liquid carbon dioxide (CO 2 ) is also used (see, for example, Patent Document 2).
  • liquid carbon dioxide is sprayed from a spray nozzle onto a substrate, and dry ice particles that have been frozen by adiabatic expansion during spraying to become dry ice collide with the substrate, so that foreign matter on the surface of a semiconductor die or substrate can be removed. The removal is performed.
  • an object of the present invention is to remove minute foreign matters while suppressing damage to a substrate and a semiconductor die.
  • the foreign matter removing apparatus of the present invention expands a pressurized flow of liquid carbon dioxide, and forms a solid carbon dioxide particle in the flow by cooling at the time of expansion, and is connected to the nozzle.
  • the foreign matter removing apparatus is characterized in that the particle diameter of individual carbon dioxide particles ejected from the ejection port is adjusted by changing the interval between the nozzle and the chamber.
  • the particle diameter of individual carbon dioxide particles ejected from the ejection port by changing the heating amount of the heater, including a heater attached to the outer surface of the chamber.
  • the jet outlet is preferably a slit that communicates with the chamber and jets the carbon dioxide particles in a strip shape toward the surface of the flat plate member.
  • the jet port is a plurality of holes arranged in a straight line in communication with the chamber.
  • the ejection port injects the carbon dioxide particles while inclining the carbon dioxide particles in the direction of the suction port.
  • the foreign matter removing apparatus of the present invention may further include an air inlet for allowing compressed air to flow into the chamber, and the chamber may be suitable for mixing the carbon dioxide particles and the compressed air.
  • the present invention can remove minute foreign matters while suppressing damage to the substrate and the semiconductor die.
  • FIG. 2 is an explanatory perspective view showing a structure of a main body and a lid of the cleaning head of the foreign matter removing apparatus shown in FIG. 1 and an assembly of the lid to the main body. It is the figure which looked at the lower surface in which the suction opening and slit of the cleaning head shown in FIG. 1 are arrange
  • FIG. 7 is a diagram of a lower surface where a suction port and an ejection port of a cleaning head of a foreign matter removing apparatus according to another embodiment of the present invention are arranged as viewed from above, and shows the operation of the foreign matter removing apparatus according to another embodiment of the present invention. It is explanatory drawing shown.
  • the foreign matter removing apparatus 100 includes a cleaning head 20 and a drive unit 40 that moves the cleaning head 20 in a direction orthogonal to the transport direction.
  • the transport direction of the substrate 13 which is a flat plate member guided by the guide rails 11 and 12 and transported in the horizontal direction is the X direction
  • the direction perpendicular to the X direction on the same plane as the X direction is the Y direction.
  • the direction perpendicular to the XY plane will be described as the Z direction.
  • a stage 45 that vacuum-sucks and heats the substrate 13 is disposed below the substrate 13.
  • the cleaning head 20 has a rectangular parallelepiped shape in which a lid 22 is attached to a rear surface 21 b of a main body 21, and solid carbon dioxide particles (hereinafter referred to as dry ice particles) for removing foreign substances are supplied to the upper part.
  • An inlet connection pipe 25 and a suction connection pipe 26 connected to a vacuum device (not shown) are attached.
  • one side surface of the cleaning head 20 is connected to an arm 28 via a connection member 27.
  • the arm 28 reciprocates in the Y direction by the drive unit 40.
  • the cleaning head 20 is attached to the arm 28 so as to be slightly inclined with respect to the surface of the substrate 13. There is a gap between the surface of the substrate 13 and the lower surface of the cleaning head 20, and the cleaning head 20 moves on the upper side of the substrate 13 in the Y direction along the surface of the substrate 13.
  • the cleaning head 20 includes a main body 21 and a lid 22 that is fixed to the rear surface 21 b of the main body 21.
  • a rectangular suction port 24 is dug in the lower surface of the main body 21. Further, the rear surface 21b of the main body 21 is formed with a recess 29a constituting a chamber 29 described later. The lower side of the recess 29 a is an inclined surface 29 b that is inclined toward the suction port 24.
  • the lid 22 includes a flange 22 a that is in close contact with a flat surface other than the recess 29 a of the rear surface 21 b of the main body 21, and a wedge-shaped inclined portion 22 b that is parallel to the inclined surface 29 b of the main body 21. ing.
  • the inclined portion 22b of the lid 22 is aligned with the inclined surface 29b of the main body and the flange 22a is screwed to the rear surface 21b as shown in FIG. 3B, the concave portion 29a of the main body 21 and the lid 22 are shown in FIG.
  • a chamber 29 extending linearly in the X direction is formed between the first flange 22a and the second flange 22a.
  • a slit which is an injection port that injects a mixed fluid of gaseous carbon dioxide and dry ice particles in a band shape toward the surface of the substrate 13 between the inclined surface 29 b of the main body 21 and the inclined portion 22 b of the lid 22. 23 is formed.
  • the slit 23 is inclined toward the suction port 24.
  • the length of the suction port 24 in the X direction is longer than the length of the slit 23 in the X direction, and extends to the vicinity of both side surfaces of the cleaning head 20 from the slit 23.
  • FIG. 4 is a view of the lower surface of the cleaning head 20 where the suction port 24 and the slit 23 are disposed as viewed from above.
  • a sleeve 30 is connected to the inlet connection pipe 25, and a nozzle 31 is connected to the sleeve 30.
  • the sleeve 30 is provided with threaded portions 30a and 30b on the inlet side and the outlet side, respectively, the threaded portion 30a on the inlet side meshes with the threaded portion 31b on the outlet side of the nozzle, and the threaded portion 30b on the outlet side It meshes with the threaded portion 25 a on the inlet side of the inlet connecting pipe 25.
  • the sleeve 30 adjusts the engagement length between the screw portion 30a on the inlet side and the screw portion 31b on the outlet side of the nozzle, and the engagement length between the screw portion 30b on the outlet side and the screw portion 25a on the inlet side of the inlet connection pipe 25. By doing so, the distance from the outlet of the nozzle 31 to the chamber 29 can be changed.
  • the nozzle 31 is connected to a liquid carbon dioxide supply device that supplies pressurized liquid carbon dioxide. Further, as shown in FIG. 2, a heater 35 is attached to the back surface of the lid 22.
  • the stage 45 vacuum-sucks and fixes the substrate 13 and turns on the built-in heater to turn the substrate 13 on, for example, 80 Heat to about °C.
  • pressurized liquid carbon dioxide supplied to the nozzle 31 from a liquid carbon dioxide supply device (not shown) is introduced.
  • the liquid carbon dioxide flowing into the nozzle 31 is compressed up to the throttle portion 31c of the nozzle 31, and when it passes through the throttle portion 31c, it adiabatically expands and the temperature decreases. Due to this temperature decrease, the liquid carbon dioxide changes to solid carbon dioxide particles (dry ice particles). Moreover, a part changes to gaseous carbon dioxide.
  • the mixed fluid of gaseous carbon dioxide and dry ice particles flows from the nozzle 31 through the sleeve 30 and the inlet connection pipe 25 into the chamber 29 of the cleaning head 20 as indicated by an arrow 91 in FIG. .
  • the mixed fluid of gaseous carbon dioxide and dry ice particles flowing into the chamber 29 is jetted obliquely downward toward the surface of the substrate 13 through the slit 23. Since the substrate 13 is heated to about 80 ° C. by the stage 45, when the dry ice particles collide with the minute foreign matter 50 on the surface of the substrate 13, the dry ice particles instantaneously sublimate and expand into gaseous carbon dioxide. Become. The minute foreign matter 50 adhering to the surface of the substrate 13 is removed from the surface of the substrate 13 by the fluid force during the sublimation and expansion. Since the mixed fluid of gaseous carbon dioxide and dry ice particles is ejected from the slit 23 in the direction of the suction port 24 as indicated by an arrow 95 in FIG.
  • the minute foreign matter 50 removed from the surface of the substrate 13 is As shown by an arrow 92 in FIG. 2, the air is sucked into a suction port 24 provided adjacent to the slit 23 and sucked from a suction connection pipe 26 to a vacuum device (not shown).
  • the minute foreign matter 50 is, for example, one having a size of less than 50 ⁇ m.
  • gaseous carbon dioxide ejected from the slits 23 together with the dry ice particles is ejected obliquely downward from the slits 23 toward the surface of the substrate 13 and is attached to the surface of the substrate 13.
  • the foreign matter 51 larger than 50 is blown off and removed.
  • the foreign matter 51 blown off by gaseous carbon dioxide is also sucked into a suction port 24 provided adjacent to the slit 23 and sucked into a vacuum device (not shown) from the suction connection pipe 26.
  • the fine foreign matter 50 and the foreign matter 51 in the region B of the substrate 13 shown in FIG. 4 is a region where the removal of the minute foreign matter 50 and the foreign matter 51 on the surface of the substrate 13 is completed, and the region C on the upstream side in the transport direction of the region B is: This is a region where the fine foreign matter 50 and the foreign matter 51 on the surface of the substrate 13 are not removed.
  • the length of the suction port 24 in the Y direction is longer than the length of the slit 23 in the Y direction, and on both side surfaces of the cleaning head 20 than the slit 23. It extends to the vicinity. For this reason, the fine foreign matter 50 and the foreign matter 51 removed from the surface of the substrate 13 by the mixed fluid of gaseous carbon dioxide and dry ice particles ejected from the slit 23 are blown away in a direction inclined from the Y direction to the X direction. Even in this case, the blown-out minute foreign matter 50 and foreign matter 51 can be sucked by the suction port 24. For this reason, it can suppress that the fine foreign material 50 and the foreign material 51 adhere again to the surface of the board
  • the particle size of the dry ice particles sprayed on the substrate 13 is too large, the fine foreign matter 50 cannot be effectively removed, and the substrate 13 is damaged by the collision of the dry ice particles.
  • the particle diameter of the dry ice particles is set to the submicron order, the minute foreign matter 50 can be removed without damaging the substrate 13 or the semiconductor die attached to the substrate 13.
  • the particle diameter of the dry ice particles ejected from the nozzle 31 becomes smaller as the flight distance L from the outlet of the nozzle 31 becomes longer as shown in FIG. Further, as shown in FIG. 6, the particle diameter of the dry ice particles ejected from the nozzle 31 decreases as the atmospheric temperature T during flight increases. Accordingly, the foreign matter removing apparatus 100 according to the present embodiment is configured so that the engagement length between the screw portion 30a on the inlet side of the sleeve 30 and the screw portion 31b on the outlet side of the nozzle, and the inlet side of the screw portion 30b on the outlet side and the inlet connection pipe 25 is set.
  • the particle size of the dry ice particles ejected from the slit 23 can be adjusted by changing the flight distance L from the outlet of the nozzle 31 to the chamber 29. Further, the foreign matter removing apparatus 100 of the present embodiment adjusts the particle size of the dry ice particles ejected from the slit 23 by changing the temperature of the chamber 29 by the heater 35 attached to the back surface of the lid 22 constituting the chamber 29. be able to.
  • the meshing lengths of the screw portions 30a and 30b of the sleeve 30 and the heating heat amount of the heater 35 may be adjusted by a test or the like so that the particle diameter of the dry ice particles ejected from the slit 23 is on the order of submicrons. Further, the particle size of the dry ice particles may be adjusted by using only one of the meshing length of the screw portions 30a and 30b of the sleeve 30 and the heating by the heater 35.
  • the foreign matter removing apparatus 100 can adjust the particle size of the dry ice particles to the submicron order by the flight distance L from the outlet of the nozzle 31 to the chamber 29 and the heating of the chamber 29. Therefore, it is possible to effectively remove the minute foreign matter 50 of less than 50 ⁇ m attached to the surface of the substrate 13 or the semiconductor die without damaging the substrate 13 or the semiconductor die.
  • the foreign matter removing apparatus 200 has an air inlet 25 c on the side surface of the sleeve 30.
  • the foreign matter removing apparatus 200 allows compressed air to flow into the chamber 29 together with gaseous carbon dioxide and dry ice particles, and mixes gaseous carbon dioxide, dry ice particles, and compressed air in the chamber 29, and slits 23.
  • the mixed fluid of compressed air, gaseous carbon dioxide, and dry ice particles is ejected from the substrate to remove the minute foreign matter 50 and the foreign matter 51 from the substrate 13.
  • the foreign substance removal apparatus 200 of this embodiment can increase the flow rate of the fluid ejected from the slit 23 as compared with the foreign substance removal apparatus 100 described above, even when the foreign substance 51 larger than the fine foreign substance 50 adheres more. Thus, the minute foreign matter 50 and the foreign matter 51 can be effectively removed. It is also possible to adjust the particle diameter of the dry ice particles ejected from the slit 23 by adjusting the temperature of the air flowing in from the air inlet 25c.
  • the air inlet 25 c that allows the compressed air to flow into the sleeve 30 is provided.
  • the air inlet 25 c allows the compressed air to flow into the chamber 29 to form gaseous carbon dioxide.
  • it is a position where dry ice particles and compressed air are mixed, they may be placed anywhere, for example, on the lid 22.
  • the foreign matter removing apparatus 300 of the present embodiment has a hole 61 communicating with the chamber 29 arranged in a straight line instead of the slit 23 of the foreign matter removing apparatus 100 described with reference to FIGS. 1 to 6. This is a squirt outlet.
  • the cleaning head 20 is reciprocated in the Y direction while jetting a mixed fluid of gaseous carbon dioxide and dry ice particles as shown by an arrow 96 in FIG.
  • the minute foreign matter 50 and the foreign matter 51 in the region B of the substrate 13 shown in FIG. 8 are removed.
  • the foreign matter removing apparatus 300 of the present embodiment has the same effects as the foreign matter removing apparatus 100 described with reference to FIGS. 1 to 6.
  • the cleaning head 20 is described as being attached to the arm 28 so as to incline from the vertical direction toward the lid 22, but as shown in FIG. If the cleaning head 20 is configured to be inclined, the cleaning head 20 may be attached to the arm 28 in a vertically standing state.
  • a mixed fluid of gaseous carbon dioxide and dry ice particles, or a mixed fluid of gaseous carbon dioxide, dry ice particles, and air is directed toward the substrate 13 that is a flat plate member.
  • the foreign matter removing apparatus 100, 200, 300 of the present embodiment is, for example, a minute foreign matter 50, foreign matter attached to the surface of a semiconductor wafer, a lead frame in which a semiconductor die is bonded on a substrate, or the like. It can also be applied when removing 51.
  • the foreign matter removing apparatuses 100, 200, and 300 of each embodiment can be incorporated into an electronic component mounting apparatus such as a die bonding apparatus, a wire bonding apparatus, and a flip chip bonding apparatus.
  • the foreign matter removing apparatuses 100, 200, and 300 according to the present embodiment can be applied to removing foreign matters on the surface of a flat plate member such as glass or film.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning By Liquid Or Steam (AREA)
PCT/JP2017/020553 2016-06-14 2017-06-02 異物除去装置 WO2017217252A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201780049515.2A CN109564865B (zh) 2016-06-14 2017-06-02 异物去除装置
KR1020197001065A KR102133214B1 (ko) 2016-06-14 2017-06-02 이물 제거 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-117573 2016-06-14
JP2016117573A JP6389988B2 (ja) 2016-06-14 2016-06-14 異物除去装置

Publications (1)

Publication Number Publication Date
WO2017217252A1 true WO2017217252A1 (ja) 2017-12-21

Family

ID=60664074

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/020553 WO2017217252A1 (ja) 2016-06-14 2017-06-02 異物除去装置

Country Status (5)

Country Link
JP (1) JP6389988B2 (ko)
KR (1) KR102133214B1 (ko)
CN (1) CN109564865B (ko)
TW (1) TWI675423B (ko)
WO (1) WO2017217252A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145618B2 (en) * 2018-03-06 2021-10-12 Sharp Kabushiki Kaisha Bonding equipment

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110091256A (zh) * 2019-06-12 2019-08-06 上海悦威电子设备有限公司 一种液态二氧化碳清洗设备
KR102232036B1 (ko) * 2019-08-27 2021-03-25 세메스 주식회사 약액 토출 장치
DE102019129446A1 (de) * 2019-10-31 2021-05-06 Krones Ag Vorrichtung und Verfahren zur Kopfrauminertisierung und Produktrestentfernung bei Flaschen
CN110700163A (zh) * 2019-11-13 2020-01-17 华南理工大学广州学院 一种基于干冰微爆炸的隧道清洗机的喷头装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099772A (ja) * 2007-10-17 2009-05-07 Iwatani Internatl Corp 洗浄装置
JP2011167822A (ja) * 2010-02-22 2011-09-01 Cool Technos:Kk ドライアイススノー洗浄装置用噴射ノズル
WO2014076794A1 (ja) * 2012-11-15 2014-05-22 三菱重工業株式会社 付着物除去装置と、該付着物除去装置を用いた蒸着システムおよび除去方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000117201A (ja) * 1998-10-12 2000-04-25 Sony Corp 洗浄装置及び洗浄方法
JP4802002B2 (ja) * 2006-01-30 2011-10-26 芝浦メカトロニクス株式会社 基板の洗浄処理装置及び洗浄処理方法
JP2009226290A (ja) * 2008-03-21 2009-10-08 Gurintekku Sanyo:Kk 洗浄装置
JP5889537B2 (ja) * 2011-03-23 2016-03-22 ファスフォードテクノロジ株式会社 ダイボンダ
JP5540032B2 (ja) * 2012-03-05 2014-07-02 富士フイルム株式会社 ラビリンスシール、洗浄装置、洗浄方法、及び溶液製膜方法
KR101731236B1 (ko) * 2015-06-22 2017-05-02 주식회사 케이씨텍 기판 처리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009099772A (ja) * 2007-10-17 2009-05-07 Iwatani Internatl Corp 洗浄装置
JP2011167822A (ja) * 2010-02-22 2011-09-01 Cool Technos:Kk ドライアイススノー洗浄装置用噴射ノズル
WO2014076794A1 (ja) * 2012-11-15 2014-05-22 三菱重工業株式会社 付着物除去装置と、該付着物除去装置を用いた蒸着システムおよび除去方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145618B2 (en) * 2018-03-06 2021-10-12 Sharp Kabushiki Kaisha Bonding equipment

Also Published As

Publication number Publication date
TWI675423B (zh) 2019-10-21
JP2017224664A (ja) 2017-12-21
CN109564865B (zh) 2023-07-04
KR20190019140A (ko) 2019-02-26
KR102133214B1 (ko) 2020-07-13
CN109564865A (zh) 2019-04-02
JP6389988B2 (ja) 2018-09-19
TW201810448A (zh) 2018-03-16

Similar Documents

Publication Publication Date Title
WO2017217252A1 (ja) 異物除去装置
JP5650896B2 (ja) 基板処理装置および基板処理方法
JP4904420B2 (ja) インクジェット用のワイプ装置およびこれを用いたワイプ方法
KR101872671B1 (ko) 드라이아이스 스노우 분사 장치
KR101779488B1 (ko) 마이크로 이산화탄소 스노우 세정장치
WO2005059984A1 (ja) 基板付着物除去方法および基板乾燥方法並びにそれら方法を用いた基板付着物除去装置および基板乾燥装置
JP4217484B2 (ja) 噴射装置および噴射装置における方法
CN102211099A (zh) 空气集尘装置
TW201713419A (zh) 除塵噴嘴及除塵裝置
WO2017204333A1 (ja) 異物除去装置
JP2007098241A (ja) 吸着ノズル洗浄方法及び装置と電子部品実装装置
US7591900B2 (en) Nozzle for supplying treatment liquid and substrate treating apparatus
KR101731236B1 (ko) 기판 처리 장치
KR20210093500A (ko) 다중 흡입구를 갖는 드라이 타입 초음파 클리너
JP2925534B1 (ja) 金属球配列方法及び配列装置
WO2018117027A1 (ja) 洗浄装置、配線修正装置、および洗浄方法
JP4288367B2 (ja) エアクリーナヘッドの噴出口の傾斜角度と吸込口の風量調整
KR20090129420A (ko) 노즐, 드라이 클리너 및 드라이 클리너 시스템
JP5183183B2 (ja) 除電装置
CN116160773A (zh) 喷墨头清洁装置
KR20120138052A (ko) Ｆｐｄ 패널의 접촉 단자부 세정 장치 및 방법
JP2011153732A (ja) 平板カセットの乾燥装置及びその方法
JP2010125359A (ja) インクジェット塗布装置のノズルヘッド洗浄装置、これを備えたインクジェット塗布装置のノズルワイピング装置
JP2004322007A (ja) 炭酸ガススノー噴射装置
JP2007152438A (ja) 半導体製造装置及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17813154

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20197001065

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 17813154

Country of ref document: EP

Kind code of ref document: A1